TWI768460B - Plasma antenna module and plasma processing device - Google Patents

Abstract

Disclosed are a plasma antenna module and a plasma processing device. The plasma antenna module includes a plasma antenna, a ground part electrically connected to a side of the plasma antenna, a power supply part for supplying power to the other side of the plasma antenna, and a roundabout part situated between the plasma antenna and the power supply part or between the plasma antenna and the ground part. The turnaround part is situated at a multiple of mutually connected contact points on a first path. In the condition of two or more of the contact points being connected to each other, the turnaround part forms a second path different from the first path. The turnaround part controls the value of current flowing into the plasma antenna according to the quantity of contact points included in the second path.

Description

Plasma antenna module and plasma processing device

The present disclosure relates to a plasma antenna module, and more particularly, to a plasma antenna module for individually controlling the current flowing into each plasma antenna.

Plasma processing apparatuses are generally of the Inductively Coupled Plasma Source (ICP) type and the Capacitively Coupled Plasma Source (CCP) type, and new technologies capable of producing higher plasma densities are also being used. The plasma source type is coil wave plasma and ECR (Electron cyclotron resonance plasma) plasma source type, etc.

The plasma processing apparatus can form a process gas into plasma by the power supply to the plasma antenna, and can process a substrate (eg, etching, vapor deposition, etc.) using the formed plasma. In this case, the density of the plasma can be one of the important factors for determining the processing speed of the substrate.

However, since the density of the plasma varies depending on the environmental conditions for processing the plasma, there is a problem that the entire substrate is not processed at the same speed but the processing speed is locally different. For example, a part of the substrate may be processed at a high speed and Another part of the problem is being dealt with at a slow rate. Furthermore, when a high-voltage power supply to be supplied to the plasma antenna is supplied, there is a need to stably control the current flowing into the plasma antenna.

The embodiments disclosed in this specification provide a plasma antenna module capable of locally adjusting the plasma density by individually controlling the current flowing into each plasma antenna.

A plasma antenna module according to an embodiment of the present disclosure includes: a plasma antenna; a ground portion, electrically connected to one side of the plasma antenna; a power supply portion, for supplying power to the other side of the plasma antenna; and a detour portion, between the plasma antenna and the power supply or between the plasma antenna and the ground. The detour includes a plurality of contacts connected to each other on the first path. When two or more of the plurality of contacts are additionally connected to each other, the detour portion forms a second route different from the first route. The detour section controls the value of the current flowing into the plasma antenna according to the number of contacts included in the second path.

A plasma antenna module according to an embodiment of the present disclosure includes: a first plasma antenna; a grounding portion, electrically connected to one side of the first plasma antenna; and a power supply portion, supplied to the other side of the first plasma antenna a power supply; and a detour part, interposed between the first plasma antenna and the power supply part or between the first plasma antenna and the ground part. The detour includes a plurality of contacts connected to each other on the first path. When two or more of the plurality of contacts are additionally connected to each other, the detour portion forms a second path having a length shorter than that of the first path, and controls the current value flowing into the first plasmonic antenna.

A plasma antenna module according to an embodiment of the present disclosure includes: a first plasma antenna; a first ground portion, electrically connected to one side of the first plasma antenna; and a power supply portion, connected to the other side of the first plasma antenna a side power supply; and a first detour part, interposed between the first plasma antenna and the power supply part or between the first plasma antenna and the first ground part. The first detour part includes: a first contact, located on the first path; a second contact, separated from the first contact and located on the first path; a first basic circuit, through the first contact and the second contact points are connected to each other to be formed and included in the first path; and a first detour circuit that additionally connects the first contact and the second contact to each other to be formed and included in a second path different from the first path . The first detour circuit has a shorter length than the first basic circuit, thereby controlling the value of the current flowing into the first plasma antenna.

A plasma antenna module according to an embodiment of the present disclosure includes: a plurality of plasma antennas; a plurality of detours, respectively connected to the plurality of plasma antennas, and including a plurality of contacts connected to each other; a transfer unit for transferring Two or more contacts among the plurality of contacts included in each detour portion are selectively and additionally connected to each other; the storage medium stores and stores the value of the current flowing into each plasma antenna according to the number of the connected contacts. information on plasma density formed by each plasma antenna; and a control unit that controls the transfer unit in order to adjust the number of contacts connected to each detour unit based on the information stored in the storage medium.

A plasma processing apparatus according to an embodiment of the present disclosure includes a plasma antenna whose plasma density is adjusted, wherein the plasma processing apparatus includes: a power supply part for supplying power to one side of the first plasma antenna; a first grounding part , electrically connected to the other side of the first plasma antenna; and a first detour part, interposed between the first plasma antenna and the power supply part or between the first plasma antenna and the first ground part, the first detour part The part includes: a basic circuit that forms a first path; a plurality of contacts that are spaced apart and connected to each other on the first path; and a detour circuit that is formed with fastening holes for fastening to the plurality of contacts, A plurality of contacts are selectively fastened in the fastening hole, and the first roundabout portion forms a second path having a length shorter than that of the first path.

A plasma processing apparatus according to an embodiment of the present disclosure includes a plasma antenna whose plasma density is adjusted, wherein the plasma processing apparatus includes a power supply unit, a first plasma antenna and a second plasma antenna provided to be spaced apart from each other. One side of the antenna, the third plasma antenna and the fourth plasma antenna supply power in parallel; the first ground part is electrically connected to the first plasma antenna, the second plasma antenna, the third plasma antenna and the fourth plasma antenna the other side of each of the body antennas; and a plurality of detours, electrically connected between the first plasma antenna, the second plasma antenna, the third plasma antenna and the fourth plasma antenna and the power supply part or the first plasma antenna Between each of the plasma antenna, the second plasma antenna, the third plasma antenna, and the fourth plasma antenna and the first ground portion, each of the plurality of detour portions includes: a basic circuit, forming a first path; a plurality of contacts, The first paths are spaced apart from each other and are connected to each other; and a detour circuit, forming fastening holes for fastening to a plurality of contacts, and by selectively fastening a plurality of contacts in the fastening holes, a plurality of The detours each form a second path having a shorter length than the first path, the first plasma antenna is located inside the second plasma antenna, the third plasma antenna, and the fourth plasma antenna, the second plasma antenna, the third plasma antenna The three plasma antennas and the fourth plasma antenna are arranged to equally divide the plasma processing area.

According to various embodiments of the present disclosure, it is possible to individually adjust the density of plasma formed by each of the plasma antennas by precisely individually controlling the value of the current flowing into each of the plasma antennas.

According to various embodiments of the present disclosure, by individually adjusting the plasma density formed by each plasma antenna, the plasma density inside the chamber can be locally controlled, whereby the entire substrate can be uniformly processed.

According to various embodiments of the present disclosure, by adjusting the ratio between the current values flowing into the plasma antennas, the plasma density inside the chamber can be locally controlled, whereby the entire substrate can be uniformly processed.

According to various embodiments of the present disclosure, since a desired contact point among a plurality of contact points included in the detour portion can be selected and connected to each other, the value of the current flowing into each plasma antenna can be precisely and individually controlled.

According to various embodiments of the present disclosure, since the number of revolutions of current flowing in the detour portion of the coil form can be easily adjusted, the value of the current flowing to each plasma antenna can be precisely and individually controlled.

According to various embodiments of the present disclosure, by implementing a detour circuit in a detour portion in a simple physical form, it is possible to stably and precisely control a high-voltage current individually.

According to various embodiments of the present disclosure, by physically implementing a detour circuit in the detour portion, it is possible to stably control the current flowing into the plasma antenna even when a high-voltage power supply is supplied.

The effects of the present disclosure are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the description of the claims.

Hereinafter, specific content for implementing the present disclosure will be described in detail with reference to the accompanying drawings. However, in the following description, detailed descriptions of well-known functions or configurations will be omitted when it may unnecessarily obscure the gist of the present disclosure.

Before describing the embodiments of the present disclosure in detail, the upper side of a figure may be referred to as "above" or "upper side" of the constituents shown in the figures, and the lower side thereof may be referred to as "below" or "lower side". In addition, the remaining parts of the configuration shown in the drawings except between or between the upper and lower sides may be referred to as "sides" or "sides".

In the present disclosure as a whole, the left side of a figure may be referred to as "left" or "left side" of the composition shown in the figure, and the right side may be referred to as "right" or "right side".

In the present disclosure as a whole, when a part is "connected" to another part, it includes not only the case of "direct connection" but also the case of "electrical connection" with other constituent elements interposed therebetween.

In the drawings, the same or corresponding components are denoted by the same reference numerals. In addition, in the following description of the embodiments, repeated description of the same or corresponding constituent elements may be omitted. However, even if the description of the constituent elements is omitted, it does not mean that the constituent elements are not included in a certain embodiment. Such relative terms such as "above", "upper side" and the like may be used to describe the relationship between the components shown in the drawings, and the present disclosure is not limited to the terms.

Hereinafter, the embodiments of the present application will be described in detail with reference to the accompanying drawings, so that those having ordinary knowledge in the technical field to which the present application pertains can be easily implemented. However, the present application may be embodied in various different forms and is not limited to the embodiments described herein.

FIG. 1 is a schematic diagram of a plasma antenna module disposed in a chamber according to an embodiment of the present disclosure. The plasma antenna module may include a power supply portion 100 , a ground portion 200 , a plasma antenna 300 and a detour portion 400 .

As shown in FIG. 1 , the plasma antenna 300 may be disposed above the chamber to provide a uniform plasma density to the substrate disposed inside the chamber. The plasma antenna 300 may include a first plasma antenna 310 , a second plasma antenna 320 , a third plasma antenna 330 and a fourth plasma antenna 340 . The plasma antennas 300 may be arranged above the chamber with a certain interval from each other.

According to an embodiment, the first plasma antenna 310 may be spaced apart from the second plasma antenna 320 and located inside the second plasma antenna 320 . In addition, the second plasma antenna 320 may be spaced apart from the third plasma antenna 330 and located inside the third plasma antenna 330, and the third plasma antenna 330 may be spaced apart from the fourth plasma antenna 340 and located in the fourth plasma antenna inside the body antenna 340 . Here, the respective plasmonic antennas 300 may be in the form of circles with different diameters from each other located on the same plane.

The number and arrangement of the plasma antennas 300 are not limited to FIG. 1 . The plasma antennas 300 may be disposed inside, outside, above or on the side of the chamber according to the type of the plasma source, and the arrangement interval between the plasma antennas 300 may be adjusted. In addition, the respective plasmonic antennas 300 may be arranged on the same plane, or may be arranged on different planes from each other.

The ground portion 200 may be electrically connected to one side of the plasma antenna 300 , and the power supply portion 100 for supplying power to the plasma antenna 300 may be connected to the other side.

According to an embodiment, one side of the first plasma antenna 310 may be electrically connected to the first ground portion 210 , and one side of the second plasma antenna 320 may be electrically connected to the second ground portion 220 . In addition, the third ground portion 230 may be electrically connected to one side of the third plasma antenna 330 , and the fourth ground portion 240 may be electrically connected to one side of the fourth plasma antenna 340 . At this time, each of the plasma antennas 300 may receive parallel supply power from the power supply unit 100 . As shown in FIG. 1 , the power supply part 100 may extend to the other side of the first plasma antenna 310 , the other side of the second plasma antenna 320 , the other side of the third plasma antenna 330 and the fourth plasma antenna The other side of the 340 is powered in parallel.

The detour part 400 may be interposed between each of the plasma antennas 300 and the power supply part 100 or between each of the plasma antennas 300 and the ground part 200 . The detour portion 400 may include a first detour portion 410 , a second detour portion 420 , a third detour portion 430 , and a fourth detour portion 440 .

According to an embodiment, as shown in FIG. 1 , the detour portion 400 may be interposed between each of the plasma antennas 300 and each of the ground portions 200 electrically connected thereto. For example, the first detour portion 410 may be interposed between the first plasma antenna 310 and the first ground portion 210 , and the second detour portion 420 may be interposed between the second plasma antenna 320 and the second ground portion 220 . In addition, the third detour portion 430 may be interposed between the third plasma antenna 330 and the third ground portion 230 , and the fourth detour portion 440 may be interposed between the fourth plasma antenna 340 and the fourth ground portion 240 .

According to yet another embodiment, the detour portion 400 may be interposed between each of the plasma antennas 300 and the power supply portion 100 electrically connected in parallel therewith. For example, the first detour part 410 may be interposed between the first plasma antenna 310 and the power supply part 100 , and the second detour part 420 may be interposed between the second plasma antenna 320 and the power supply part 100 . In addition, the third detour portion 430 may be interposed between the third plasma antenna 330 and the power supply portion 100 , and the fourth detour portion 440 may be interposed between the fourth plasma antenna 340 and the power supply portion 100 .

The process of controlling the current flowing into each plasma antenna 300 by the detour unit 400 to control the plasma density inside the chamber will be described in more detail below.

FIG. 2 is a diagram illustrating a first path P1 and a second path P2 formed in the detour portion 400 according to an embodiment of the present disclosure. The first path P1 and the second path P2 refer to physical paths of current, and correspond to paths of different lengths from each other. The principle of forming the first path P1 and the second path P2 in the detour portion 400 will be described with reference to the first detour portion 410 as follows. This principle can be applied not only to the first detour portion 410 but also to other detour portions.

The first detour part 410 may include a plurality of contacts 500 spaced apart from each other, and the plurality of contacts 500 may be located on the first path P1. According to an embodiment, as shown in FIG. 2( a ), the first detour portion 410 may include a first contact 510 , a second contact 520 , a third contact 530 , a fourth contact 540 , and a fifth contact 550 and the sixth contact 560.

When the respective contacts are not connected to each other, the current flowing through the detour portion 400 follows the first path P1. When two or more of the plurality of contacts are connected, a second path P2 is formed that is different from the first path P1, and the current flowing through the detour portion 400 follows the second path P2. The length of the second path P2 may be adjusted according to the number of the contacts 500 included in the second path P2, that is, the number of the contacts 500 connected to each other. For example, the more the number of contacts 500 included in the second path P2 increases, the more the length of the second path P2 can be reduced. By controlling the length of the second path P2 according to the number of contacts connected to each other in the first detour portion 410, the current value flowing into the first plasmonic antenna 310 connected to the first detour portion 410 can be controlled to adjust the value of the current flowing through the first detour portion 410. The plasma density formed by a plasma antenna 310 .

According to an embodiment, as shown in (a) of FIG. 2 , the first path P1 may include basic circuits in the form of curves, that is, a first basic circuit 610 , a second basic circuit 620 and a third basic circuit 630 (refer to FIG. 2 (a) indicated by the arrow). In addition, the first path P1 may include a circuit connecting between the second contact 520 and the third contact 530 and a circuit connecting between the fourth contact 540 and the fifth contact 550 . The curved form and the straight form are merely examples of the physical length in which the length of the curved form used for the comparison circuit is longer than the length of the straight form, and these forms do not limit the present invention.

According to an embodiment, as shown in FIG. 2( b ), the second path P2 may include a first detour circuit 710 and a third contact in a straight line formed by newly connecting the first contact 510 and the second contact 520 to each other. 530 and the fourth contact 540 are newly connected to each other to form a second detour circuit 720 in the form of a straight line, and the fifth contact 550 and the sixth contact 560 are newly connected to each other. 2(b) indicated by the arrow). In addition, the second path P2 may include a circuit connecting the second contact point 520 and the third contact point 530 and a circuit connecting the fourth contact point 540 and the fifth contact point 550 . The detour circuits 710 , 720 , and 730 in which the contacts are connected in a straight line are shorter in length than the conventional basic circuits 610 , 620 and 630 in a curved shape. Therefore, the length of the second path P2 including the detour circuits 710 , 720 , and 730 is shorter than the length of the first path P1 including the basic circuits 610 , 620 , and 630 .

In proportion to the number of detour circuits that the first detour portion 410 has or the number of contacts connected to each other, the second path P2 is formed such that the length of the path is shorter than that of the first path P1, so that the second path P2 The resistance value can be reduced compared to the first path P1. If the resistance value of the second path P2 is reduced, the current passing through the first detour portion 410 follows the second path P2. Thereby, the current flowing into the first plasmonic antenna 310 connected to the first detour portion 410 can be increased. The plasma density formed by the first plasma antenna 310 can be increased due to the increase of the current.

The length of the second path P2 can be changed according to the number of detour circuits or the number of contacts connected to each other in the first detour portion 410 . When the number of detour circuits or the number of contacts connected to each other in the first detour portion 410 is reduced and the length of the second path P2 is increased, the resistance value of the second path P2 increases and the current value decreases. As a result, The plasma density formed by the first plasma antenna 310 connected to the first detour portion 410 is reduced. In addition, if the number of detour circuits included in the first detour portion 410 or the number of contacts connected to each other increases and the length of the second path P2 is shortened, the resistance value of the second path P2 decreases and the current value increases, which As a result, the plasma density formed by the first plasma antenna 310 connected to the first detour portion 410 increases.

Although the detour circuit 700 is described as being shorter than the base circuit, it is not limited to this, and instead, the length of the second path P2 can be adjusted by making a part or all of the detour circuit 700 longer than the base circuit 600 .

Direction can be controlled by using the second detour portion 420 , the third detour portion 430 , and the fourth detour portion 440 connected to the second plasmonic antenna 320 , the third plasmonic antenna 330 , and the fourth plasmonic antenna 340 , respectively, and the above-described principle. The current values flowing into the second plasma antenna 320 , the third plasma antenna 330 and the fourth plasma antenna 340 are individually controlled by the second plasma antenna 320 , the third plasma antenna 330 and the fourth plasma antenna 340 . Plasma Density. Furthermore, since the current value flowing into each plasma antenna 300 can be individually controlled, the ratio between the current values of each plasma antenna 300 that receives parallel power supply from the power supply unit 100 can be adjusted.

For example, two detour circuits are included in the second path P2 of the first detour portion 410 connected to the first plasmonic antenna 310 , and two detour circuits are included in the second path P2 of the second detour portion 420 connected to the second plasmonic antenna 320 By including three detour circuits 700, the ratio of the current value of the first plasma antenna 310 can be decreased and the ratio of the current value of the second plasma antenna 320 can be increased. Or, conversely, three detour circuits are included in the second path P2 of the first detour portion 410 connected to the first plasmonic antenna 310 , and the second route P2 of the second detour portion 420 connected to the second plasmonic antenna 320 includes three detour circuits. The path P2 includes two detour circuits, so that the ratio of the current value of the first plasma antenna 310 can be increased and the ratio of the current value of the second plasma antenna 320 can be decreased.

As yet another example, the second path P2 is not generated in the first detour part 410 and the second path P2 is generated in the second detour part 420, or the second path P2 is generated in the first detour part 410 and the second path P2 is generated in the second detour part 410. Since the second path P2 is not generated in the detour portion 420 , the ratio of the current value of each plasma antenna 300 can be adjusted.

In this way, the ratio between the current values of the respective plasma antennas 300 is adjusted as the length of the second path P2 is adjusted by the detour portion 400 , and the resistance value of the respective plasma antennas 300 is adjusted, so that the flow rate of the current flowing into the respective plasma antennas 300 can be adjusted. The ratio of the current value.

According to the environmental conditions for processing plasma, the current value flowing into each plasma antenna 300 is controlled by each detour portion 400, and the density of the plasma formed by each plasma antenna 300 can be adjusted individually, so that the entire substrate can be made to have the same value. Processing speed is processed.

In another embodiment, the second contact 520 and the third contact 530, and the fourth contact 540 and the fifth contact 550 of the first detour portion 410 may be formed at the same location. For example, when the first detour portion 410 is formed in a coil shape, as shown in FIG. 2( c ) and FIG. 2( d ), the second contact point 520 , the third contact point 530 , and the fourth contact point 540 and the fifth contact 550 may be formed at the same location. Due to this structure, as shown in FIG. 2( c ), the first path P1 can be formed such that the second basic circuit 620 extends from the first basic circuit 610 and the third basic circuit 630 extends from the second basic circuit 620 . In addition, as shown in FIG. 2( d ), the second path P2 may be formed such that the second detour circuit 720 extends from the first detour circuit 710 and the third detour circuit 730 extends from the second detour circuit 720 .

The method of adjusting the number of contacts to be connected will be described in detail below with reference to the first detour portion 410 and with reference to FIGS. 3 to 5 , and it can also be applied to other detour portions.

FIG. 3 is an illustration diagram illustrating a process of slidingly connecting a plurality of contacts of the detour portion 400 according to an embodiment of the present disclosure. According to an embodiment, the detour circuit 700 is configured to be connected to each contact included in the detour portion 400 by being movable by a sliding-type transfer unit.

According to an embodiment, the detour circuit 700 may be formed in a plate shape. The detour circuit 700 may be formed with fastening holes H to be fastened with respective contacts included in the detour part 400 . At this time, each contact may be formed in a shape that can be fastened to the fastening hole H of the detour circuit 700 shown in FIG. 6 .

The first contact 510 and the second contact 520 are connected by a detour circuit 700 . Thereby, the first detour circuit 710 is formed, and the second path P2 different from the first path P1 can be formed. As shown in (a) of FIG. 3 , by forming the first detour circuit 710 having a length shorter than that of the first basic circuit 610 in the curved form, the length of the second path P2 is reduced compared to that of the first path P1, whereby, The resistance value of the second path P2 is reduced, and the current passing through the detour portion 400 follows the second path P2. Therefore, since the voltage supplied by the power supply part 100 is the same, the value of the current flowing into the plasma antenna connected to the corresponding detour part 400 can be increased. At this time, the difference between the first path P1 and the second path P2 may be equivalent to the difference between the first basic circuit 610 and the first detour circuit 710, and the remaining paths may be the same. That is, the difference between the first path P1 and the second path P2 corresponds to the difference in length between the basic circuit and the detour circuit newly generated corresponding to it, and this principle can be applied not only to the sliding method, but also to the later-described lifting and lowering method. method, hinge method, etc.

According to an embodiment, the detour circuit 700 may be configured to be slidable in the right direction (the direction of the arrow shown in the figure). In this structure, as shown in FIG. 3( b ), the second contact 520 and the third contact 530 are additionally connected by the bypass circuit 700 to extend from the first bypass circuit 710 to form the second bypass circuit 720 . By additionally forming the second detour circuit 720 , the length of the second path P2 shown in FIG. 3( b ) can be shortened compared to the length of the second path P2 shown in FIG. 3( a ) The length difference between the circuit 720 and the second basic circuit 620 . Therefore, the resistance value of the second path P2 is further reduced than that of the second path P2 shown in FIG. 3( a ), so that the value of the current flowing into the corresponding plasma antenna can be further increased.

As shown in FIG. 3( c ), the third contact 530 and the fourth contact 540 are further connected by the detour circuit 700 , and the third detour circuit 730 can be additionally formed by extending from the second detour circuit 720 . Thus, the second path P2 is formed as a straight path and the length is significantly reduced compared to the first path P1. Therefore, the resistance value of the formed second path P2 can be significantly reduced and the current value flowing in the plasma antenna can be greatly increased.

In this way, by adjusting the number of contacts connected by the detour circuit 700 , the current value flowing into each plasma antenna 300 can be precisely controlled, and the plasma density formed by each plasma antenna 300 can be controlled. Furthermore, by realizing the detour circuit 700 in a simple physical form, the high-voltage current can be individually controlled stably and precisely.

FIG. 4 is an illustrative diagram illustrating a process of connecting a plurality of contacts of the detour portion 400 in an ascending and descending manner according to an embodiment of the disclosure. According to an embodiment, the detour circuit 700 is configured so as to be movable by the lift-type transfer unit 800 so as to be able to connect the respective contacts included in the detour portion 400 .

The detour circuit 700 can be moved, for example, in the up-down direction (in the direction of the arrow in the figure) by the transfer unit 800 . As shown in FIG. 4 , when the transfer unit 800 moves upward, the first detour circuit 710 comes into contact with the first contact 510 and the second contact 520 , so that the first contact 510 and the second contact 520 can be connected to each other. . The second detour circuit 720 also comes into contact with the third contact 530 and the fourth contact 540 when the transfer unit 800 moves in the downward direction, so that the third contact 530 and the fourth contact 540 can be connected to each other.

The detour circuit 700 can be moved independently by the transfer unit 800 , so that only contacts at desired arbitrary positions can be connected to each other, and the current flowing through the detour portion 400 can flow along the second path P2 formed by the detour circuit 700 . Therefore, the current value flowing into each plasma antenna 300 can be controlled more precisely.

FIG. 5 is an illustration diagram illustrating a process of hingedly connecting a plurality of contacts of the detour portion 400 according to an embodiment of the present disclosure. According to an embodiment, the detour circuit 700 is configured to be movable by a hinge-type transfer unit, so that each contact included in the detour portion 400 can be connected.

According to an embodiment, the detour circuit 700 is configured to be rotatable and connectable to the respective contacts included in the detour portion 400 . For example, the detour circuit 700 may be formed in a plate shape that can be hingedly fastened to the detour portion 400 , and may be configured to be rotatable with reference to the center point of the hinged portion. At this time, the detour circuit 700 may be formed with fastening holes H as shown in FIG. 6 so as to be able to be fastened to the respective contacts included in the detour portion 400 . As shown in FIG. 5 , the first detour circuit 710 is connected to the first contact 510 and is rotated upward with the first contact 510 as the center, so that the first contact 510 and the second contact 520 can be connected to each other and The third contact point 530 and the fourth contact point 540 are connected to each other, and the second path P2 can be formed. In addition, the second detour circuit 720 is connected to the sixth contact 560 and is rotated upward about the sixth contact 560 to contact the fifth contact 550 , so that the fifth contact 550 and the sixth contact 560 can be connected. connected to each other.

FIG. 6 is a perspective view showing a first plasma antenna 310 and main components connected to the first plasma antenna 310 included in the plasma antenna module according to an embodiment of the present disclosure. According to an embodiment, the first plasma antenna 310 may be formed in a shape similar to a circle, and one side of the first plasma antenna 310 may be connected to the power supply portion 100 and the other side to the first ground portion 210 .

The first detour part 410 may be interposed between the first plasma antenna 310 and the first ground part 210 . As shown in FIG. 6 , the first detour portion 410 may have a coil shape that can ensure the maximum length within the same area. In the case of having the coil form as described above, there is an effect that the circuit length can be significantly shortened when the detour circuit 700 is used.

The detour circuit 700 may be formed in the shape of a plate, and the fastening hole H may be formed to be fastened to the first path P1, that is, the coil-shaped contact 500. As shown in FIG. 6, the contact 500 may include a plurality of contacts. At this time, each contact of the first detour portion 410 may have a shape that is fastened to the fastening hole H of the detour circuit 700 . For example, as shown in FIG. 6 , each contact may have a convex shape with a thread formed therein so as to be able to be fastened with a screw inserted through the fastening hole H. As shown in FIG.

By adjusting the number of contacts connected by the detour circuit 700 , the value of the current flowing into the first plasma antenna 310 can be controlled, and the plasma density formed by the first plasma antenna 310 can be controlled. The above only describes the first plasma antenna 310 of the plasma antenna module and the main parts connected thereto, but the remaining plasma antennas 320 , 330 and 340 of the plasma antenna module may have the same configuration as the first plasma antenna 310 . The configuration of the main parts connected thereto is the same, and the currents of the plasma antennas 320 , 330 , and 340 can be controlled by the detours 420 , 430 , and 440 connected to the plasma antennas 320 , 330 , and 340 .

FIG. 7 is a perspective view illustrating a detour portion 400 according to an embodiment of the present disclosure. According to an embodiment, the detour portion 400 may be formed in a coil shape. As shown in FIG. 7 , the detour portion may be, for example, a spiral coil shape formed by extending each basic circuit and having a number of turns of 4 times. At this time, the detour portion 400 may be configured to include a plurality of contacts located on the first path P1.

In one embodiment, a plurality of contacts may be formed one on each of the individual windings on the same line. For example, as shown in FIG. 7, a plurality of contacts may form four contacts 510, 520, 530, 540 in a convex shape.

FIG. 8 is a perspective view showing an example of connection between the first contact 510 and the second contact 520 according to an embodiment of the present disclosure, and FIG. 9 is a perspective view showing the first contact 510 and the second contact according to an embodiment of the present disclosure. A perspective view of an example of the connection between the point 520 and the third contact point 530 , FIG. 10 is a diagram showing the connection of the first contact point 510 , the second contact point 520 , the third contact point 530 and the fourth contact point 540 according to an embodiment of the present disclosure A perspective view of an example.

As shown in FIG. 8 , the detour circuit 700 may be in the shape of a plate, and a plurality of fastening holes H may be formed so as to be able to be fastened to the plurality of contacts 500 . Here, the fastening holes H may be formed in the same number as the number of contacts so as to be able to be fastened to the plurality of contacts 500 . As shown in FIG. 8 , the first contact 510 , the second contact 520 , the third contact 530 and the fourth contact 540 may form four fastening holes so as to be fastened with screws inserted through the respective fastening holes H . The plurality of contacts 500 formed in the detour portion 400 may have a shape to be fastened to the fastening hole H of the detour circuit 700 . For example, each of the contacts 500 may have a convex shape formed with threads to be able to be fastened with a screw inserted through each of the fastening holes H, as shown.

The value of the current flowing into each plasma antenna 300 can be controlled according to the number of contacts included in the second path P2. By connecting the first contact point 510 and the second contact point 520 through the fastening hole H of the bypass circuit 700, as shown in FIG. 8, the first bypass circuit 710 can be formed and the second path P2 different from the first path P1 can be formed . In this case, the length of the second path P2 is shorter than that of the first path P1, which is turned four times, by one turn, and the current flowing into the detour portion can be turned only along the second path P2. 3 times to flow. Therefore, the value of the current flowing into the plasma antenna can be increased.

In order to further increase the value of the current, as shown in FIG. 9 , the second contact 520 and the third contact 530 may be additionally connected through a detour circuit 700 . If the second contact 520 and the third contact 530 are connected by the bypass circuit 700, the second bypass circuit 720 can be additionally formed. In this case, the length of the second path P2 is shortened by the amount of two turns compared to the first path P1, and the current flowing into the detour portion flows twice along the second path P2, and the current flows. can be further increased.

As shown in FIG. 10 , the third contact point 530 and the fourth contact point 540 are additionally connected to form a third detour circuit 730 , so that the value of the current can be increased. At this time, the current flows only one turn along the second path P2 , and the value of the current can be further increased compared to the embodiments of FIGS. 8 and 9 .

In this way, the electric current flowing into each plasma antenna 300 can be controlled by adjusting the number of turns of the coil with a simple structure.

FIG. 11 is an illustration diagram showing a detour portion 400 of another embodiment of the present disclosure. According to an embodiment, the detour portion 400 may be configured to have a plurality of coil shapes. For example, as shown in FIG. 11 , the detour portion 400 may be formed by two coils 1110 and 1120 being spaced apart from each other. By forming the detour portion 400 by separating a plurality of coil shapes from each other, a larger number of coil turns can be adjusted. Therefore, the plasma density can be controlled more precisely.

12 is a schematic diagram of a plasma antenna module according to another embodiment of the present disclosure. According to an embodiment, the detour portion 400 may be interposed between each of the plasma antennas 300 and the power supply portion 100 electrically connected in parallel therewith. As shown in FIG. 12 , the first detour portion 410 may be interposed between the first plasma antenna 310 and the power supply portion 100 , and the second detour portion 420 may be interposed between the second plasma antenna 320 and the power supply portion 100 . In addition, the third detour portion 430 may be interposed between the third plasma antenna 330 and the power supply portion 100 , and the fourth detour portion 440 may be interposed between the fourth plasma antenna 340 and the power supply portion 100 . As shown in FIG. 1 and FIG. 12 , each plasma antenna may have circular shapes with different diameters and be arranged on the same plane, and the arrangement of the plasma antenna may be suitable for CCP (Capacitively Coupled Plasma). type.

13 is a schematic diagram of a plasma antenna module according to yet another embodiment of the present disclosure. According to an embodiment, the plasma antenna module may be formed by arranging more than one plasma antenna 310 and 320 on the side of the chamber. As shown in FIG. 13 , the plasma antenna module may include a first plasma antenna 310 and a second plasma antenna 320 , and the plasma antennas 310 and 320 may be spaced up and down with a certain interval from each other and arranged on the side of the chamber. For example, the first plasma antenna 310 may be located on the upper side of the second plasma antenna 320 . By arranging the plasma antennas 310, 320 on the sides of the chamber, high-intensity plasma can be supplied to the substrate. This plasma antenna arrangement may be suitable for ICP (Inductively Coupled Plasma) type.

14 is a top view of a plasma antenna according to an embodiment of the present disclosure. Each of the plasma antennas 300 may form a first processing area 1410 , a second processing area 1420 , a third processing area 1430 , and a fourth processing area 1440 , which are areas for processing the substrate with plasma. Here, in order to form each processing area, the first plasma antenna 310 , the second plasma antenna 320 , the third plasma antenna 330 , and the fourth plasma antenna 340 may be arranged in each processing area. The respective processing regions may be formed corresponding to the positions where the respective plasma antennas 300 are arranged, but are not limited thereto.

According to an embodiment, as shown in (a) of FIG. 14 , the first processing area 1410 may be located inside the substrate. The second processing area 1420, the third processing area 1430, and the fourth processing area 1440 may be located outside the substrate, and the outside of the substrate may be equally divided. At this time, the respective processing regions may partially overlap each other.

The current value of each plasma antenna 300 can be adjusted by each detour portion 400 connected to each plasma antenna 300, and the density of plasma formed by the current value can be adjusted. The processing region processed by each plasma antenna 300 may vary according to the shape of each plasma antenna 300 .

According to another embodiment, as shown in (b) of FIG. 14 , the first processing area 1410 may be formed by the first plasma antenna 310 being positioned at the innermost side, and the second processing area 1420 may be formed by the second plasma antenna 320 being positioned at the first A processing area 1410 is formed outside. In addition, the third processing area 1430 may be formed outside the second processing area 1420 through the third plasma antenna 330 , and the fourth processing area 1440 may be formed outside the third processing area 1430 through the fourth plasma antenna 340 . At this time, the respective processing regions may partially overlap each other. Depending on the shape formed by each of the plasma antennas 300 , various patterns may be formed in the processing field in which the substrate is processed, and the plasma density may be formed in various patterns.

According to an embodiment, the number of connected contacts in the detour portion 400 connected to each plasma antenna 300 , the current value flowing into the corresponding plasma antenna according to the number of the connected contacts, and the number of connected contacts can be determined. The number of dots establishes a corresponding relationship with each other through the plasma density formed by each plasma antenna 300 and the processing state of the substrate, and the related information is stored in the storage medium. The control unit uses the transfer unit to individually adjust the number of contacts to be connected in each detour unit 400 based on the data stored in the storage medium and according to needs such as changes in the substrate, changes in the external environment, etc., so as to individually control the formation of the plasma antennas 300. The plasma density of the whole substrate can be precisely controlled.

The above-mentioned preferred embodiments of the present invention are disclosed for the purpose of illustration, and those skilled in the art with ordinary knowledge can make various modifications, changes and additions to the present invention within the spirit and scope of the present invention, and should be regarded as such modifications, changes and additions. Additional are within the scope of the stated claims.

Those with ordinary knowledge in the technical field to which the present invention pertains can make various replacements, modifications, and changes within the scope of the technical idea of the present invention, so the present invention is not limited to the foregoing embodiments and drawings.

100: Power Supply Department 200: Ground 210: First ground 220: Second ground 230: The third ground 240: Fourth ground 300: Plasma Antenna 310: First Plasma Antenna 320: Second Plasma Antenna 330: Third Plasma Antenna 340: Fourth Plasma Antenna 400: Detour 410: First Detour 420: Second Detour 430: The Third Detour 440: Fourth Detour 500: Contact 510: First Contact 520: Second Contact 530: Third Contact 540: Fourth Contact 550: Fifth Contact 560: Sixth Contact 600: Basic Circuits 610: First Basic Circuit 620: Second Basic Circuit 630: Third Basic Circuit 700: Detour circuit 710: First Detour Circuit 720: Second Detour Circuit 730: Third Detour Circuit 800: Transfer unit 1110, 1120: Coil 1410: First processing area 1420: Second processing area 1430: Third processing area 1440: Fourth processing area P1: first path P2: Second Path H: Fastening hole

Embodiments of the present disclosure will be described with reference to the accompanying drawings described below, wherein like reference numerals denote like elements, but are not limited thereto.

FIG. 1 is a schematic diagram of a plasma antenna module disposed in a chamber according to an embodiment of the present disclosure.

FIG. 2 is a diagram illustrating a first path and a second path formed in a detour according to an embodiment of the present disclosure.

FIG. 3 is a diagram illustrating a process of slidingly connecting a plurality of contacts of a detour portion according to an embodiment of the present disclosure.

FIG. 4 is a diagram illustrating a process of connecting a plurality of contacts of a detour portion in an ascending and descending manner according to an embodiment of the present disclosure.

5 is an illustration diagram illustrating a process of hingedly connecting a plurality of joints of a detour according to an embodiment of the present disclosure.

6 is a perspective view showing a first plasma antenna and main components connected to the first plasma antenna included in the plasma antenna module according to the embodiment of the present disclosure.

FIG. 7 is a perspective view showing a detour portion of an embodiment of the present disclosure.

8 is a perspective view showing an example of connection of a first contact and a second contact according to an embodiment of the present disclosure.

9 is a perspective view showing an example of connection of the first contact, the second contact, and the third contact according to an embodiment of the present disclosure.

10 is a perspective view showing an example of connection of the first contact, the second contact, the third contact, and the fourth contact according to an embodiment of the present disclosure.

FIG. 11 is an illustration diagram showing a detour of another embodiment of the present disclosure.

12 is a schematic diagram of a plasma antenna module according to another embodiment of the present disclosure.

13 is a schematic diagram of a plasma antenna module according to yet another embodiment of the present disclosure.

14 is a top view of a plasma antenna according to an embodiment of the present disclosure.

100: Power Supply Department

200: Ground

210: First ground

220: Second ground

230: The third ground

240: Fourth ground

300: Plasma Antenna

310: First Plasma Antenna

320: Second Plasma Antenna

330: Third Plasma Antenna

340: Fourth Plasma Antenna

400: Detour

410: First Detour

420: Second Detour

430: The Third Detour

440: Fourth Detour

Claims (21)

A plasma antenna module, comprising: a plasma antenna; a grounding part, electrically connected to one side of the plasma antenna; a power supply part, supplying power to the other side of the plasma antenna; Between the plasma antenna and the power supply portion or between the plasma antenna and the ground portion, the detour portion includes a plurality of contacts connected to each other on a first path, and the detour portion is located on a first path. When two or more contacts among the plurality of contacts are additionally connected to each other, the detour portion forms a second path different from the first path, and the detour portion forms a second path according to the The number of contacts controls the value of the current flowing into the plasma antenna. A plasma antenna module, comprising: a first plasma antenna; a ground portion electrically connected to one side of the first plasma antenna; a power supply portion for supplying power to the other side of the first plasma antenna ; and a detour portion, interposed between the first plasma antenna and the power supply portion or between the first plasma antenna and the ground portion, the detour portions including each other on the first path In the case where two or more of the connected contacts are additionally connected to each other, the detour portion forms a second path having a length shorter than the first path to control the The value of the current flowing into the first plasma antenna. The plasma antenna module according to claim 2, wherein the plasma antenna module further comprises: a second plasma antenna, which is arranged apart from the first plasma antenna, and the power supply part is directed to the The first plasma antenna and the second plasma antenna are supplied with power in parallel, and the current value of the first plasma antenna and the second plasma antenna are adjusted through the second path of the first plasma antenna. The ratio between the current values of the bulk antenna. A plasma antenna module, comprising: a first plasma antenna; a first ground portion electrically connected to one side of the first plasma antenna; and a power supply portion connected to the other side of the first plasma antenna supplying power; and a first detour portion interposed between the first plasma antenna and the power supply portion or between the first plasma antenna and the first ground portion, the first detour portion Including: a first contact, located on the first path; a second contact, separated from the first contact and located on the first path; a first basic circuit, through the first contact and all the second contacts are formed by being connected to each other and are included in the first path; and a first detour circuit is formed by additionally connecting the first contacts and the second contacts to each other and is included in the In the second path different from the first path, the first detour circuit has a length shorter than that of the first basic circuit, thereby controlling the value of the current flowing into the first plasma antenna. The plasma antenna module according to claim 4, wherein the first detour part further comprises: a third contact located on the first path; a fourth contact separated from the third contact open and located on the first path; a second basic circuit formed by connecting the third contact and the fourth contact to each other and included in the first path; and a second detour circuit, The third contact and the fourth contact are formed by connecting each other and included in the second path, and the second detour circuit has a length shorter than that of the second basic circuit. The plasma antenna module of claim 5, wherein the second contact and the third contact are formed at the same position. The plasma antenna module according to claim 5, wherein the second detour circuit extends from the first detour circuit, the first detour circuit and the second detour circuit are formed in the shape of a plate, and the Fastening holes that can be fastened to the first contact, the second contact, the third contact, and the fourth contact are formed in the first and second bypass circuits. The plasma antenna module of claim 5, wherein the second base circuit extends from the first base circuit, and the first base circuit and the second base circuit are formed in a coil shape. The plasma antenna module according to claim 5 or 8, wherein, The first detour portions are interposed between the first plasma antenna and the power supply portion or between the first plasma antenna and the first ground portion, and are separated from each other to form a plurality of portions. The plasma antenna module according to claim 4, wherein the plasma antenna module further comprises: a second plasma antenna, which is arranged apart from the first plasma antenna; and a second ground portion, which is electrically connected on one side of the second plasma antenna; and a second detour part, interposed between the second plasma antenna and the power supply part or the second plasma antenna and the second ground part the power supply part supplies power to the other side of the first plasma antenna and the other side of the second plasma antenna in parallel, and the second detour part includes a power supply located on the first path When a plurality of contacts are additionally connected to each other among the plurality of contacts, a second path having a length shorter than that of the first path is formed. The plasma antenna module of claim 10, wherein the first plasma antenna is located inside the second plasma antenna. The plasma antenna module of claim 10, wherein the first plasma antenna is located on the upper side of the second plasma antenna. The plasma antenna module according to claim 10, wherein the plasma antenna module further comprises: a third plasma antenna; a third ground portion, electrically connected to one side of the third plasma antenna; a third detour part, interposed between the third plasma antenna and the power supply part or between the third plasma antenna and the third ground part; a fourth plasma antenna; a fourth ground part , which is electrically connected to one side of the fourth plasma antenna; the fourth detour part is interposed between the fourth plasma antenna and the power supply part or the fourth plasma antenna and the fourth plasma antenna Between the ground parts, the first plasma antenna, the second plasma antenna, the third plasma antenna, and the fourth plasma antenna are spaced apart from each other, and the power supply part supplies the first plasma antenna to the first plasma antenna. The other side of a plasma antenna, the other side of the second plasma antenna, the other side of the third plasma antenna, and the other side of the fourth plasma antenna are supplied with power in parallel. The third detour portion includes a plurality of contacts located on the first path, and is formed to have a higher density than the The first path has a short length, a second path, the fourth detour portion includes a plurality of contacts located on the first path, and there are two or more contacts among the plurality of contacts in the fourth detour portion A second path having a shorter length than the first path is formed in addition to each other. The plasma antenna module of claim 13, wherein the first plasma antenna is located inside the second plasma antenna, the third plasma antenna and the fourth plasma antenna, so The second plasma antenna, the third plasma antenna, and the fourth plasma antenna are arranged to equally divide the plasma processing region. The plasma antenna module according to claim 14, wherein the second path formed by the first detour portion, the second detour portion, the third detour portion, and the fourth detour portion passes through respectively , adjust the current values of the first plasma antenna, the second plasma antenna, the third plasma antenna and the fourth plasma antenna, and adjust the current value of the first plasma antenna Densities of plasmas formed by the antenna, the second plasma antenna, the third plasma antenna, and the fourth plasma antenna, respectively. A plasma antenna module, comprising: a plurality of plasma antennas; a plurality of detours, respectively connected between a plurality of plasma antennas and a plurality of power supply parts or between a plurality of plasma antennas and a plurality of grounding parts, and includes a plurality of contacts each connected to each other in the detour portion; a transfer unit for selectively and additionally connecting two or more contacts to each other among the plurality of contacts included in each detour portion; a storage medium for storing There is information on plasma density formed by each plasma antenna by controlling the value of current flowing to each plasma antenna according to the number of the connected contacts; and a control unit for controlling the information stored in the storage medium based on the information The transfer unit is controlled by adjusting the number of contacts connected to each detour portion. A plasma processing apparatus including a plasma antenna whose plasma density is adjusted, wherein the plasma processing apparatus comprises: a power supply unit for supplying power to one side of the first plasma antenna; a first ground part electrically connected to the other side of the first plasma antenna; and a first detour part, interposed between the first plasma antenna and the power supply part or the first plasma Between the antenna and the first ground portion, the first detour portion includes: a basic circuit that forms a first path; a plurality of contacts that are spaced apart and connected to each other on the first path; and a detour circuit , a fastening hole for fastening to the plurality of contacts is formed, and by selectively fastening the plurality of contacts in the fastening hole, the first detour portion is formed to have a larger diameter than the second A second path of short length. The plasma processing apparatus of claim 17, wherein the basic circuit is formed in a coil shape. The plasma processing apparatus according to claim 18, wherein a plurality of the first detours are formed to be spaced apart from each other. A plasma processing apparatus including a plasma antenna whose plasma density is adjusted, wherein the plasma processing apparatus includes a power supply unit, a first plasma antenna, a second plasma antenna, a first plasma antenna, and a One side of each of the three plasma antennas and the fourth plasma antenna is supplied with power in parallel; the first ground part is electrically connected to the first plasma antenna, the second plasma antenna, the third plasma antenna and the the other side of each of the fourth plasma antennas; and a plurality of detours, electrically connected to the first plasma antenna, the second plasma antenna, the third plasma antenna, and the fourth plasma antenna Plasma antennas each and the power supply between the corresponding parts or between each of the first plasma antenna, the second plasma antenna, the third plasma antenna and the fourth plasma antenna and the first ground part, the multiple Each of the detours includes: a base circuit forming a first path; a plurality of contacts on the first path spaced apart from each other and connected to each other; and a detour circuit formed for fastening to the plurality of contacts the fastening hole, by selectively fastening the plurality of contacts in the fastening hole, the plurality of detours each form a second path having a length shorter than the first path, the The first plasma antenna is located inside the second plasma antenna, the third plasma antenna and the fourth plasma antenna, the second plasma antenna, the third plasma antenna and the The fourth plasma antenna is arranged to equally divide the plasma processing region. The plasma processing apparatus according to claim 20, wherein the first plasma antenna, the second plasma antenna, the The current values of the third plasma antenna and the fourth plasma antenna are adjusted by the first plasma antenna, the second plasma antenna, the third plasma antenna and the fourth plasma antenna The density of the plasma formed by the plasma antenna respectively.

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