TWI768140B - Object having copper surface after roughening treatment, method for roughening treatment of copper surface, method for producing object, method for producing laminated board, and method for producing printed wiring board - Google Patents
Object having copper surface after roughening treatment, method for roughening treatment of copper surface, method for producing object, method for producing laminated board, and method for producing printed wiring board Download PDFInfo
- Publication number
- TWI768140B TWI768140B TW107137215A TW107137215A TWI768140B TW I768140 B TWI768140 B TW I768140B TW 107137215 A TW107137215 A TW 107137215A TW 107137215 A TW107137215 A TW 107137215A TW I768140 B TWI768140 B TW I768140B
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- TW
- Taiwan
- Prior art keywords
- copper
- copper surface
- treatment
- manufacturing
- convex portion
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 239000010949 copper Substances 0.000 title claims abstract description 88
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 74
- 238000011282 treatment Methods 0.000 title claims description 70
- 238000000034 method Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000007788 roughening Methods 0.000 title claims description 18
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000005751 Copper oxide Substances 0.000 claims abstract description 25
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 25
- 239000011889 copper foil Substances 0.000 claims description 51
- 238000007254 oxidation reaction Methods 0.000 claims description 25
- 230000003647 oxidation Effects 0.000 claims description 24
- 239000007864 aqueous solution Substances 0.000 claims description 20
- 238000004090 dissolution Methods 0.000 claims description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229920001955 polyphenylene ether Polymers 0.000 claims description 3
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 18
- 239000002253 acid Substances 0.000 description 10
- 239000007800 oxidant agent Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000003513 alkali Substances 0.000 description 6
- 150000004032 porphyrins Chemical class 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 5
- -1 porphyrin macrocycle Chemical class 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000011149 active material Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 208000018208 Hyperimmunoglobulinemia D with periodic fever Diseases 0.000 description 2
- 206010072219 Mevalonic aciduria Diseases 0.000 description 2
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MLDWGLQSBBCMMO-UHFFFAOYSA-N [Na].[Na].[Na].CNCC(=O)O Chemical compound [Na].[Na].[Na].CNCC(=O)O MLDWGLQSBBCMMO-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- UZVUJVFQFNHRSY-OUTKXMMCSA-J tetrasodium;(2s)-2-[bis(carboxylatomethyl)amino]pentanedioate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CC[C@@H](C([O-])=O)N(CC([O-])=O)CC([O-])=O UZVUJVFQFNHRSY-OUTKXMMCSA-J 0.000 description 2
- DTXLBRAVKYTGFE-UHFFFAOYSA-J tetrasodium;2-(1,2-dicarboxylatoethylamino)-3-hydroxybutanedioate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)C(O)C(C([O-])=O)NC(C([O-])=O)CC([O-])=O DTXLBRAVKYTGFE-UHFFFAOYSA-J 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- BAERPNBPLZWCES-UHFFFAOYSA-N (2-hydroxy-1-phosphonoethyl)phosphonic acid Chemical compound OCC(P(O)(O)=O)P(O)(O)=O BAERPNBPLZWCES-UHFFFAOYSA-N 0.000 description 1
- VKZRWSNIWNFCIQ-WDSKDSINSA-N (2s)-2-[2-[[(1s)-1,2-dicarboxyethyl]amino]ethylamino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)NCCN[C@H](C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-WDSKDSINSA-N 0.000 description 1
- DCCWEYXHEXDZQW-BYPYZUCNSA-N (2s)-2-[bis(carboxymethyl)amino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)N(CC(O)=O)CC(O)=O DCCWEYXHEXDZQW-BYPYZUCNSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- RAIPHJJURHTUIC-UHFFFAOYSA-N 1,3-thiazol-2-amine Chemical compound NC1=NC=CS1 RAIPHJJURHTUIC-UHFFFAOYSA-N 0.000 description 1
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- VKZRWSNIWNFCIQ-UHFFFAOYSA-N 2-[2-(1,2-dicarboxyethylamino)ethylamino]butanedioic acid Chemical compound OC(=O)CC(C(O)=O)NCCNC(C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- LVACOMKKELLCHJ-UHFFFAOYSA-N 3-trimethoxysilylpropylurea Chemical compound CO[Si](OC)(OC)CCCNC(N)=O LVACOMKKELLCHJ-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 101100345345 Arabidopsis thaliana MGD1 gene Proteins 0.000 description 1
- 101100207331 Arabidopsis thaliana TPPI gene Proteins 0.000 description 1
- RIPVVXMYZUQUIM-UHFFFAOYSA-N CO[SiH](OC)OC.C1=CC=CC=C1 Chemical compound CO[SiH](OC)OC.C1=CC=CC=C1 RIPVVXMYZUQUIM-UHFFFAOYSA-N 0.000 description 1
- ZTVCAEHRNBOTLI-UHFFFAOYSA-L Glycine, N-(carboxymethyl)-N-(2-hydroxyethyl)-, disodium salt Chemical compound [Na+].[Na+].OCCN(CC([O-])=O)CC([O-])=O ZTVCAEHRNBOTLI-UHFFFAOYSA-L 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- KXJLGCBCRCSXQF-UHFFFAOYSA-N [diacetyloxy(ethyl)silyl] acetate Chemical compound CC(=O)O[Si](CC)(OC(C)=O)OC(C)=O KXJLGCBCRCSXQF-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229950003476 aminothiazole Drugs 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- JEZFASCUIZYYEV-UHFFFAOYSA-N chloro(triethoxy)silane Chemical compound CCO[Si](Cl)(OCC)OCC JEZFASCUIZYYEV-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- DJQJFMSHHYAZJD-UHFFFAOYSA-N lidofenin Chemical compound CC1=CC=CC(C)=C1NC(=O)CN(CC(O)=O)CC(O)=O DJQJFMSHHYAZJD-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920003253 poly(benzobisoxazole) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 229960002218 sodium chlorite Drugs 0.000 description 1
- 239000000176 sodium gluconate Substances 0.000 description 1
- 229940005574 sodium gluconate Drugs 0.000 description 1
- 235000012207 sodium gluconate Nutrition 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- DRKXDZADBRTYAT-DLCHEQPYSA-J tetrasodium (2S)-2-[bis(carboxymethyl)amino]pentanedioate Chemical compound C(=O)(O)CN([C@@H](CCC(=O)[O-])C(=O)[O-])CC(=O)O.[Na+].[Na+].[Na+].[Na+].C(=O)(O)CN([C@@H](CCC(=O)[O-])C(=O)[O-])CC(=O)O DRKXDZADBRTYAT-DLCHEQPYSA-J 0.000 description 1
- VWNRYDSLHLCGLG-NDNWHDOQSA-J tetrasodium;(2s)-2-[bis(carboxylatomethyl)amino]butanedioate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)C[C@@H](C([O-])=O)N(CC([O-])=O)CC([O-])=O VWNRYDSLHLCGLG-NDNWHDOQSA-J 0.000 description 1
- 238000004324 time-proportional phase incrementation Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- ALVYUZIFSCKIFP-UHFFFAOYSA-N triethoxy(2-methylpropyl)silane Chemical compound CCO[Si](CC(C)C)(OCC)OCC ALVYUZIFSCKIFP-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- OHOTVSOGTVKXEL-UHFFFAOYSA-K trisodium;2-[bis(carboxylatomethyl)amino]propanoate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)C(C)N(CC([O-])=O)CC([O-])=O OHOTVSOGTVKXEL-UHFFFAOYSA-K 0.000 description 1
- ASTWEMOBIXQPPV-UHFFFAOYSA-K trisodium;phosphate;dodecahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].[Na+].[O-]P([O-])([O-])=O ASTWEMOBIXQPPV-UHFFFAOYSA-K 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/70—Carriers or collectors characterised by shape or form
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
本發明的目的是提供一種具有粗化處理後之銅表面的物體。本發明之一實施態樣係一種物體,具有被厚度為6nm以上之銅覆蓋的表面,其中,至少一部分的銅表面具有凸部,該凸部的表面含有氧化銅,該凸部的內部含有銅,每3.8μm中平均有5個以上的高度為50nm以上之凸部,且該凸部的平均長度為500nm以下,深度6nm(SiO2換算)之Cu/O的含量比為5以下。 The object of the present invention is to provide an object with a roughened copper surface. One embodiment of the present invention is an object having a surface covered with copper having a thickness of 6 nm or more, wherein at least a part of the copper surface has a convex portion, the surface of the convex portion contains copper oxide, and the interior of the convex portion contains copper , there are on average 5 or more protrusions with a height of 50 nm or more per 3.8 μm , and the average length of the protrusions is 500 nm or less.
Description
本發明係關於一種具有粗化處理後之銅表面的物體。 The present invention relates to an object having a roughened copper surface.
銅具有多種用途,例如使用於印刷佈線板之銅箔、佈線於基板之銅線、LIB負極集電體用之銅箔等。 Copper has a variety of uses, such as copper foil for printed wiring boards, copper wires for wiring on substrates, copper foil for LIB negative electrode current collectors, and the like.
例如,使用於印刷佈線板之銅箔被要求與樹脂之密著性。為了提升此密著性,以往有以蝕刻等將銅箔的表面粗化處理,以提升物理性黏著力的方法。然而,隨著印刷佈線板的高密度化,使銅箔表面被要求平坦化。為了滿足上述相反的要求,已開發有進行氧化步驟及還原步驟等之銅表面處理方法(WO2014/126193號公開公報)。根據該方法,將銅箔前處理,浸漬於含有氧化劑之藥水,藉此使銅箔表面氧化形成氧化銅之凹凸後,浸漬於含有還原劑之藥水以使氧化銅還原,藉此調整表面的凹凸來整平表面粗度。此外,另開發有在氧化步驟中添加界面活性分子的方法作為利用氧化還原之銅箔處理的密著性改善方法(日本特表2013-534054號公報)、在還原步驟後使用胺基噻唑系化合物等在銅箔表面形成保護皮膜的方法(日本特開平8-97559號公報)。 For example, a copper foil used for a printed wiring board is required to have adhesion to resin. In order to improve this adhesiveness, the method of roughening the surface of copper foil by etching etc. conventionally, and improving the physical adhesive force has been known. However, with the increase in density of printed wiring boards, the surface of the copper foil is required to be flattened. In order to satisfy the above-mentioned opposite requirements, a copper surface treatment method for performing an oxidation step, a reduction step, and the like has been developed (WO2014/126193 Publication No.). According to this method, the copper foil is pretreated and dipped in a potion containing an oxidizing agent to oxidize the surface of the copper foil to form unevenness of copper oxide, and then immersed in a potion containing a reducing agent to reduce the copper oxide, thereby adjusting the unevenness of the surface to level the surface roughness. In addition, a method of adding interfacial active molecules in the oxidation step has been developed as a method for improving adhesion by copper foil treatment by redox (JP 2013-534054 A), and an aminothiazole-based compound is used after the reduction step. etc. A method of forming a protective film on the surface of a copper foil (Japanese Patent Laid-Open No. 8-97559).
又,在LIB負極集電體中,若為了高輸出、高能量密度而採用大容量的活性物質,則充電時及放電時之活性物質的體積膨脹率增大。因此,若重複充放電,則連接活性物質及集電體的結合材會破裂,或者結合材由活 性物質界面、集電體界面剝離,循環特性惡化。為了防止上述情況,已有一種發明係增加銅箔方面的結合材用量,使銅箔與負極合劑層的密著性提升(日本特開平10-284059號公報)。 In addition, in the LIB negative electrode current collector, if a large-capacity active material is used for high output and high energy density, the volume expansion rate of the active material during charging and discharging increases. Therefore, when charging and discharging are repeated, the binding material connecting the active material and the current collector is broken, or the binding material is decomposed from the active material. The material interface and the current collector interface are peeled off, and the cycle characteristics are deteriorated. In order to prevent the above situation, there is an invention that increases the amount of the binder in the copper foil to improve the adhesion between the copper foil and the negative electrode mixture layer (Japanese Patent Laid-Open No. 10-284059).
本發明的目的是提供一種具有粗化處理後之銅表面的物體。 The object of the present invention is to provide an object with a roughened copper surface.
本發明之一實施態樣係一種具有粗化處理後之銅表面的物體,具有被厚度為6nm以上之銅覆蓋的表面,其中,至少一部分的銅表面具有凸部,該凸部的表面含有氧化銅,該凸部的內部含有銅,在截面中,每3.8μm中平均有5個以上的高度為50nm以上之凸部,且該凸部的平均長度為500nm以下,深度6nm(SiO2換算)之Cu/O的含量比為5以下,掃描式電子顯微鏡之截面拍攝影像中,對於將凸部兩側之凹部的極小點連接之線,此線的中點與凸部的極大點的距離可作為該凸部的高度而被測定。該物體可為銅箔、銅粒子、銅粉或被銅鍍之物體。包含該氧化銅之層的厚度可為8~50nm。 An embodiment of the present invention is an object having a roughened copper surface, having a surface covered with copper with a thickness of 6 nm or more, wherein at least a part of the copper surface has a convex portion, and the surface of the convex portion contains oxide Copper, the inside of the convex portion contains copper, and in the cross section, there are on average 5 or more convex portions with a height of 50 nm or more per 3.8 μm , and the average length of the convex portions is 500 nm or less, and the depth is 6 nm (in terms of SiO2) The Cu/O content ratio is 5 or less, and in the cross-sectional image of the scanning electron microscope, for the line connecting the minimum points of the concave parts on both sides of the convex part, the distance between the midpoint of the line and the maximum point of the convex part can be determined. It was measured as the height of this convex part. The object can be copper foil, copper particles, copper powder or copper-plated objects. The thickness of the layer including the copper oxide may be 8-50 nm.
本發明之其他實施態樣係一種銅表面的粗化處理方法,包含:將銅表面氧化之第一步驟;及將氧化的該銅表面溶解之第二步驟。在第一步驟之前可使用鹼性水溶液進行鹼處理。在第一步驟中該銅表面可被氧化劑氧化。在第二步驟中該氧化的該銅表面可被溶解劑溶解。該溶解劑的pH值可為pH9.0~14.0。該氧化的該銅表面可被溶解使得該銅表面氧化所產生之氧化銅的溶解率為35~99%,且由SERA測定所得的氧化膜厚度為4~150nm。 Another embodiment of the present invention is a method for roughening a copper surface, comprising: a first step of oxidizing the copper surface; and a second step of dissolving the oxidized copper surface. Alkaline treatment using an aqueous alkaline solution may be performed prior to the first step. The copper surface can be oxidized by an oxidizing agent in the first step. The oxidized copper surface can be dissolved by a dissolving agent in the second step. The pH value of the dissolving agent can be pH9.0~14.0. The oxidized copper surface can be dissolved so that the dissolution rate of copper oxide produced by oxidation of the copper surface is 35-99%, and the thickness of the oxide film measured by SERA is 4-150 nm.
本發明之其他實施態樣係上述任一種物體的製造方法,包含:將該物體表面的銅以上述記載之粗化處理方法處理的步驟。 Another embodiment of the present invention is a method for producing any one of the objects described above, including the step of treating the copper on the surface of the object by the roughening treatment method described above.
本發明之其他實施態樣係一種積層板的製造方法,係銅箔與樹脂之積層板的製造方法,該銅箔係上述任一個物體,該製造方法包含將該物 體與該樹脂黏著成層狀之步驟。該樹脂可為聚苯醚。 Another embodiment of the present invention is a method of manufacturing a laminate, a method of manufacturing a laminate of copper foil and resin, wherein the copper foil is any one of the above-mentioned objects, and the manufacturing method includes the object The step of adhering the body and the resin into a layer. The resin may be polyphenylene ether.
本發明之其他實施態樣係一種印刷佈線板之製造方法,包含上述任一個積層板的製造方法的積層板製造步驟。 Another embodiment of the present invention is a method for manufacturing a printed wiring board, which includes a laminate manufacturing step of any one of the above-described methods for manufacturing a laminate.
〔第1圖〕本發明的實施例1中,由粗化處理後之銅箔表面起算的深度中各個元素的比例。 [FIGURE 1] In Example 1 of this invention, the ratio of each element in the depth from the copper foil surface after roughening process.
〔第2圖〕本發明的實施例1中,以掃描式電子顯微鏡(SEM)拍設粗化處理後之銅箔的表面及截面之照片。 [FIG. 2] In Example 1 of this invention, the photograph of the surface and the cross section of the copper foil after roughening treatment was taken with a scanning electron microscope (SEM).
〔第3圖〕本發明的實施例1中,於SEM拍攝之照片計算凸部高度及數量之計算方法。 [FIG. 3] In Example 1 of the present invention, a calculation method for calculating the height and the number of convex portions in a photograph taken by an SEM.
〔第4圖〕本發明的實施例2中,測試溶解劑的pH值與剝離強度之關係的結果。 [FIG. 4] In Example 2 of the present invention, the relationship between the pH value of the dissolving agent and the peel strength was tested.
〔第5圖〕本發明的實施例2中,測量粗化處理後之銅箔中包含氧化銅之層的厚度及成分。 [FIG. 5] In Example 2 of the present invention, the thickness and composition of the layer containing copper oxide in the copper foil after the roughening treatment were measured.
〔第6圖〕本發明的實施例3中,對於進行氧化處理之銅箔,測試進行溶解處理之時間的影響。 [FIG. 6] In Example 3 of the present invention, with respect to the copper foil subjected to the oxidation treatment, the influence of the time of the dissolution treatment was tested.
〔第7圖〕本發明的實施例4中,對於銅箔,測試進行氧化處理之時間的影響。 [FIG. 7] In Example 4 of the present invention, the influence of the time of oxidizing treatment was tested for copper foil.
以下一邊列舉實施例一邊詳細說明本發明的實施形態。又,根據本說明書的記載,發明所屬技術領域中具有通常知識者係明瞭本發明的目 的、特徵、優點及其構思,發明所屬技術領域中具有通常知識者可容易地根據本說明書的記載重現本發明。以下記載之發明的實施形態及具體實施例等,係表示本發明的較佳實施態樣,用於例示及說明,不用以限定本發明。發明所屬技術領域中具有通常知識者係明瞭,在本說明書所揭示之本發明的意圖及範圍內,可基於本說明書的記載進行各種修飾。 Hereinafter, embodiments of the present invention will be described in detail while giving examples. In addition, from the description of this specification, those with ordinary knowledge in the technical field to which the invention pertains will understand the object of the present invention. The present invention can be easily reproduced by those with ordinary knowledge in the technical field to which the invention belongs, based on the description of the present specification. The embodiments and specific examples of the invention described below represent preferred embodiments of the present invention, are used for illustration and description, and are not intended to limit the present invention. It will be apparent to those skilled in the art to which the present invention pertains that various modifications can be made based on the description of the present specification within the intent and scope of the present invention disclosed in the present specification.
具有粗化處理後之銅表面的物體:本發明之一實施態樣的具有粗化處理後之銅表面的物體,係具有被銅覆蓋之表面的物體,在至少一部分的銅表面具有凸部,凸部的表面含有氧化銅(Cu2O+CuO),凸部的內部含有銅。 Object with a roughened copper surface: An object with a roughened copper surface according to an embodiment of the present invention is an object with a surface covered with copper, and has protrusions on at least a part of the copper surface, The surface of the convex portion contains copper oxide (Cu 2 O+CuO), and the inside of the convex portion contains copper.
具有銅表面的物體亦可為由銅形成之物體,亦可為在由銅以外之物形成的物體表面設有銅層者,施以銅鍍者亦可,覆蓋表面之銅連同含有氧化銅之層,最薄部分較佳為6nm以上,更佳為10nm以上,又較佳為100nm以上。此銅之厚度可以藉由組合Ar離子濺鍍對試料表面之蝕刻與X射線光電子能譜法(XPS)對表面之元素分析來測定。 An object with a copper surface may also be an object formed of copper, or a surface of an object formed of something other than copper is provided with a copper layer, or coated with copper, the copper covering the surface and the copper oxide-containing object. The thinnest part of the layer is preferably 6 nm or more, more preferably 10 nm or more, and still more preferably 100 nm or more. The copper thickness can be determined by combining Ar ion sputtering etching of the sample surface with elemental analysis of the surface by X-ray photoelectron spectroscopy (XPS).
此物體的形狀不特別限定,例如可為箔狀、粒子狀、粉狀,亦可為以銅為主成分之銅箔、銅粒子、銅粒。 The shape of this object is not particularly limited, and may be, for example, foil, particle, or powder, or may be copper foil, copper particles, or copper particles containing copper as its main component.
在物體表面,每3.8μm中高度為50nm以上之凸部,較佳為平均5個以上,更佳為10個以上,又較佳為20個以上。此數目係例如在截面的SEM影像中,對於相鄰的凹部將極小點連接之線,此線的中點與相鄰凹部之間存在之凸部的極大點的距離作為突起物的高度,此時可藉由計算高度為50nm以上之凸部的數量來統計數目。並且,凸部高度的平均較佳為500nm以下,更佳為350nm以下。又,凸部高度的平均較佳為20nm以上,更佳為50nm以上。 On the surface of the object, the number of protrusions having a height of 50 nm or more per 3.8 μm is preferably 5 or more on average, more preferably 10 or more, and still more preferably 20 or more. This number is, for example, in the SEM image of the cross-section, for the line connecting the minimum points of the adjacent concave parts, the distance between the midpoint of the line and the maximum point of the convex part existing between the adjacent concave parts is used as the height of the protrusions. The number can be counted by calculating the number of protrusions with a height of 50 nm or more. Furthermore, the average of the heights of the convex portions is preferably 500 nm or less, and more preferably 350 nm or less. In addition, the average of the heights of the convex portions is preferably 20 nm or more, and more preferably 50 nm or more.
深度6nm(SiO2換算)之Cu/O的含量比不特別限定,較佳為 5以下,更佳為4以下,又較佳為3以下。深度12nm(SiO2換算)之Cu/O的含量比不特別限定,較佳為8以下,更佳為6以下,又較佳為4以下。深度18nm(SiO2換算)之Cu/O的含量比不特別限定,較佳為5以下,更佳為4以下,又較佳為3以下。深度40nm(SiO2換算)之Cu/O的含量比不特別限定,較佳為20以下,更佳為16以下,又較佳為12以下,且較佳為2.0以上,更佳為2.5以上,又較佳為3.0以上。此含量比可以藉由組合Ar離子濺鍍對試料表面之蝕刻與X射線光電子能譜法(XPS)對試料表面之各物質含量測定來算出。此外,進行Ar離子濺鍍時,對試料表面預先設想的平面位置作為深度的起點。 The content ratio of Cu/O at a depth of 6 nm (in terms of SiO 2 ) is not particularly limited, but is preferably 5 or less, more preferably 4 or less, and still more preferably 3 or less. The content ratio of Cu/O at a depth of 12 nm (in terms of SiO 2 ) is not particularly limited, but is preferably 8 or less, more preferably 6 or less, and still more preferably 4 or less. The content ratio of Cu/O at a depth of 18 nm (in terms of SiO 2 ) is not particularly limited, but is preferably 5 or less, more preferably 4 or less, and still more preferably 3 or less. The content ratio of Cu/O at a depth of 40 nm (in terms of SiO 2 ) is not particularly limited, but is preferably 20 or less, more preferably 16 or less, more preferably 12 or less, and preferably 2.0 or more, more preferably 2.5 or more, It is also preferable that it is 3.0 or more. This content ratio can be calculated by combining the etching of the sample surface by Ar ion sputtering and the measurement of the content of each substance on the sample surface by X-ray photoelectron spectroscopy (XPS). In addition, when Ar ion sputtering is performed, the plane position preliminarily assumed on the sample surface is used as the starting point of the depth.
凸部表面的包含氧化銅之層的厚度不特別限定,以SERA測定且換算成均一厚度之狀態時,包含氧化銅之層的厚度較佳為由凸部表面起算1nm以上,更佳為4nm以上,又較佳為8nm以上。又,較佳為150nm以下,更佳為50nm以下。藉此,可形成與預浸體之剝離強度高的銅表面。 The thickness of the layer containing copper oxide on the surface of the convex portion is not particularly limited. When measured by SERA and converted to a uniform thickness, the thickness of the layer containing copper oxide is preferably 1 nm or more from the convex portion surface, more preferably 4 nm or more. , and preferably 8 nm or more. Moreover, 150 nm or less is preferable, and 50 nm or less is more preferable. Thereby, the copper surface with high peeling strength with a prepreg can be formed.
銅表面的粗化處理方法:本發明之一實施態樣的銅表面的粗化處理方法包含第一步驟及第二步驟,第一步驟將銅表面氧化,第二步驟將氧化的銅表面溶解。 Method for roughening copper surface: The method for roughening copper surface according to an embodiment of the present invention includes a first step and a second step. The first step oxidizes the copper surface, and the second step dissolves the oxidized copper surface.
首先,在第一步驟中,以氧化劑將銅表面氧化,形成包含氧化銅之層,同時在表面形成凸部。 First, in the first step, the surface of copper is oxidized with an oxidizing agent to form a layer containing copper oxide, and at the same time, protrusions are formed on the surface.
在此氧化步驟之前,可藉由鹼處理進行脫脂。此鹼處理的方法不特別限定,較佳可用30~50g/L之鹼性水溶液,更佳可用40g/L之鹼性水溶液,鹼性水溶液例如氫氧化鈉水溶液,於30~50℃處理0.5~2分鐘程度後水洗來進行。之後,為了去除自然氧化皮膜以減少處理不均,可以用酸進行清洗處理。此清洗處理例如可以藉由將銅表面浸漬於液溫20~50℃、5~20重量%之硫酸1~5分鐘後水洗來進行。為了減少處理不均,並防止清洗處理 所使用之酸的氧化劑混入,可以進一步進行弱鹼處理。此鹼處理方法不特別限定,,較佳可用0.1~10g/L之鹼性水溶液,更佳可用1~2g/L之鹼性水溶液,鹼性水溶液例如氫氧化鈉水溶液,於30~50℃處理0.5~2分鐘程度後水洗來進行。又,亦可以進行蝕刻等物理性地粗化銅表面的處理作為前處理。此外,這些步驟並非本發明的必要構成。 Prior to this oxidation step, degreasing can be carried out by alkaline treatment. The method of this alkali treatment is not particularly limited, preferably an alkaline aqueous solution of 30~50g/L, more preferably an alkaline aqueous solution of 40g/L, an alkaline aqueous solution such as an aqueous sodium hydroxide solution, treated at 30~50°C for 0.5~ After about 2 minutes, wash with water. After that, in order to remove the natural oxide film and reduce the unevenness of the treatment, it can be washed with an acid. This cleaning treatment can be performed, for example, by immersing the copper surface in a liquid temperature of 20 to 50° C. and 5 to 20% by weight of sulfuric acid for 1 to 5 minutes, followed by water washing. To reduce uneven treatment and prevent cleaning treatment The oxidizing agent of the acid to be used can be mixed in, and further weak base treatment can be performed. The alkali treatment method is not particularly limited, preferably 0.1~10g/L alkaline aqueous solution, more preferably 1~2g/L alkaline aqueous solution, alkaline aqueous solution such as sodium hydroxide aqueous solution, at 30~50 ℃ treatment After about 0.5 to 2 minutes, wash with water. Moreover, as a pre-processing, the process of physically roughening a copper surface, such as etching, may be performed. Furthermore, these steps are not essential components of the present invention.
氧化步驟中可使用氧化劑。氧化劑不特別限定,例如可以使用亞氯酸鈉、次氯酸鈉、氯酸鉀、過氯酸鉀等之水溶液。氧化劑中可添加各種添加劑(例如磷酸三鈉十二水合物等磷酸鹽)或界面活性分子。界面活性分子可舉例如紫質、紫質大環、擴張紫質、縮環紫質、紫質直鏈聚合物、紫質夾心配位錯合物、紫質陣列、矽烷、四有機基-矽烷、胺基乙基-胺基丙基-三甲氧基矽烷、(3-胺基丙基)三甲氧基矽烷、(1-[3-(三甲氧基矽基)丙基]尿素)、(3-胺基丙基)三乙氧基矽烷、(3-環氧丙基氧丙基)三甲氧基矽烷、(3-氯丙基)三甲氧基矽烷、(3-環氧丙基氧丙基)三甲氧基矽烷、二甲基二氯矽烷、3-(三甲氧基矽基)丙基甲基丙烯酸酯、乙基三乙醯氧基矽烷、三乙氧基(異丁基)矽烷、三乙氧基(辛基)矽烷、參(2-甲氧基乙氧基)(乙烯基)矽烷、氯三甲基矽烷、甲基三氯矽烷、四氯化矽、四乙氧基矽烷、苯基三甲氧基矽烷、氯三乙氧基矽烷、乙烯基-三甲氧基矽烷、胺、糖等。又,氧化劑可與醇類、酮類、羧酸等溶劑並用。 An oxidizing agent can be used in the oxidation step. The oxidizing agent is not particularly limited, and for example, an aqueous solution of sodium chlorite, sodium hypochlorite, potassium chlorate, potassium perchlorate, or the like can be used. Various additives (such as phosphates such as trisodium phosphate dodecahydrate) or interfacial active molecules can be added to the oxidizing agent. The interface-active molecules include, for example, porphyrin, porphyrin macrocycle, expanded porphyrin, condensed porphyrin, porphyrin linear polymer, porphyrin sandwich coordination complex, porphyrin array, silane, tetraorgano-silane , aminoethyl-aminopropyl-trimethoxysilane, (3-aminopropyl)trimethoxysilane, (1-[3-(trimethoxysilyl)propyl]urea), (3 -Aminopropyl)triethoxysilane, (3-glycidoxypropyl)trimethoxysilane, (3-chloropropyl)trimethoxysilane, (3-glycidoxypropyl) ) trimethoxysilane, dimethyldichlorosilane, 3-(trimethoxysilyl)propyl methacrylate, ethyltriacetoxysilane, triethoxy(isobutyl)silane, trimethoxysilane Ethoxy(octyl)silane, gins(2-methoxyethoxy)(vinyl)silane, chlorotrimethylsilane, methyltrichlorosilane, silicon tetrachloride, tetraethoxysilane, benzene trimethoxysilane, chlorotriethoxysilane, vinyl-trimethoxysilane, amine, sugar, etc. In addition, the oxidizing agent may be used in combination with solvents such as alcohols, ketones, and carboxylic acids.
氧化反應條件不特別限定,氧化劑的液溫較佳為40~95℃,更佳為40~90℃。反應時間較佳為0.5~30分鐘,更佳為1~10分鐘。 The oxidation reaction conditions are not particularly limited, and the liquid temperature of the oxidizing agent is preferably 40 to 95°C, more preferably 40 to 90°C. The reaction time is preferably 0.5 to 30 minutes, more preferably 1 to 10 minutes.
接著,將氧化之銅表面以溶解劑溶解,調整氧化之銅表面的凸部。本步驟所使用的溶解劑不特別限定,可舉例如螯合劑、生物分解性螯合劑等,具體而言可舉例如EDTA(乙二胺四乙酸)、DHEG(二羥乙基甘胺酸)、GLDA(L-麩胺酸二乙酸四鈉)、EDDS(乙二胺-N,N’-二琥珀酸)、HIDS(3-羥基-2,2’-亞胺基二琥珀酸鈉)、MGDA(甲基甘胺酸二乙酸三鈉)、ASDA (天門冬胺酸二乙酸四鈉)、HIDA(N-2-羥基乙基亞胺基二乙酸二鈉)、葡萄糖酸鈉、羥基乙叉二膦酸等。 Next, the oxidized copper surface is dissolved with a dissolving agent, and the convex part of the oxidized copper surface is adjusted. The dissolving agent used in this step is not particularly limited, for example, a chelating agent, a biodegradable chelating agent, etc., for example, EDTA (ethylenediaminetetraacetic acid), DHEG (dihydroxyethylglycine), GLDA (tetrasodium L-glutamic acid diacetate), EDDS (ethylenediamine-N,N'-disuccinic acid), HIDS (sodium 3-hydroxy-2,2'-iminodisuccinic acid), MGDA (Trisodium Methylglycine Diacetate), ASDA (tetrasodium aspartate diacetate), HIDA (disodium N-2-hydroxyethyliminodiacetate), sodium gluconate, hydroxyethylidene diphosphonic acid, etc.
本步驟使用的溶解劑可與醇類、酮類、羧酸等溶劑並用。溶解劑的pH不特別限定,惟由於在酸性的溶解量大,使得處理控制較難、容易產生處理不均、不會形成由最佳Cu/O比所形成之凸部,故較佳為鹼性,更佳為pH9.0~14.0、又較佳為pH9.0~10.5、又更佳為pH9.8~10.2。 The dissolving agent used in this step can be used in combination with solvents such as alcohols, ketones, and carboxylic acids. The pH of the dissolving agent is not particularly limited, but since the amount of dissolving in the acid is large, the treatment control is difficult, the treatment unevenness is likely to occur, and the convex portion formed by the optimal Cu/O ratio will not be formed, so it is preferably an alkali. It is more preferably pH9.0~14.0, more preferably pH9.0~10.5, still more preferably pH9.8~10.2.
在此步驟中,處理銅表面至氧化銅的溶解率為35~99%,較佳為77~99%,且CuO的厚度為4~150nm,較佳為8~50nm。在此條件下,與預浸體之剝離強度變高,故較佳為預先進行前導測試,設定溫度時間等條件以得到這樣的氧化銅層。 In this step, the dissolution rate of the treated copper surface to copper oxide is 35-99%, preferably 77-99%, and the thickness of CuO is 4-150 nm, preferably 8-50 nm. Under this condition, the peeling strength with the prepreg becomes high, so it is preferable to perform a pre-test in advance, and set conditions such as temperature and time to obtain such a copper oxide layer.
上述步驟後可以進行使用矽烷耦合劑等之耦合處理或使用苯并三唑類等之防鏽處理。 After the above steps, a coupling treatment using a silane coupling agent or the like or a rust preventive treatment using a benzotriazole or the like can be performed.
具有粗化處理後之銅表面的物體的製造方法:本發明之一實施態樣的具有粗化處理後之銅表面的物體的製造方法,包含使用上述銅表面的粗化處理方法,將該物體所具有的銅表面氧化之步驟。藉由使用本製造方法,可以製造上述具有粗化處理後之銅表面的物體。 Method for producing an object with a roughened copper surface: A method for producing an object with a roughened copper surface according to an embodiment of the present invention, comprising using the above-mentioned method for roughening the copper surface, the object Has the copper surface oxidation steps. By using this manufacturing method, the object which has the copper surface after roughening process mentioned above can be manufactured.
具有粗化處理後之銅表面的物體的利用方法:上述粗化處理方法可以用於印刷佈線板所使用之銅箔、佈線於基板之銅線、LIB負極集電體用之銅箔等的粗化處理。 Utilization method of objects with roughened copper surface: The above roughening method can be used for the roughening of copper foils used for printed wiring boards, copper wires wired to substrates, and copper foils for LIB negative electrode collectors. processing.
例如,可用於將印刷佈線板所使用之銅箔的表面粗化處理,與樹脂黏著成層狀,藉此製作積層板來製造印刷佈線板。在此情況下,樹脂的種類不特別限定,較佳使用聚苯醚、環氧樹脂、PPO、PBO、PTFE、LCP或TPPI。 For example, it can be used to roughen the surface of the copper foil used for the printed wiring board, and to adhere to the resin in a layered form, thereby producing a laminate to manufacture a printed wiring board. In this case, the kind of resin is not particularly limited, and polyphenylene ether, epoxy resin, PPO, PBO, PTFE, LCP or TPPI is preferably used.
實施例1:〔銅箔的表面粗化處理〕使用DR-WS(古河電工股 份有限公司製,厚度18μm)作為實施樣品及比較樣品的銅箔,將光澤面(與相反面比較時為平坦之面)粗化處理。 Example 1: [Surface Roughening Treatment of Copper Foil] Using DR-WS (Furukawa Electric Co., Ltd. Co., Ltd., thickness 18 μm) as the copper foil of the implementation sample and the comparative sample, the glossy surface (flat surface when compared with the opposite surface) was roughened.
(1)前處理:首先對所有銅箔用40g/L之氫氧化鈉水溶液於50℃進行鹼性之脫脂處理1分鐘。之後,藉由在室溫浸漬於10重量%之硫酸數分鐘後水洗以進行酸清洗。 (1) Pretreatment: First, all copper foils were subjected to alkaline degreasing treatment at 50° C. for 1 minute with a 40 g/L sodium hydroxide aqueous solution. After that, acid cleaning was performed by immersing in 10% by weight of sulfuric acid at room temperature for several minutes and then washing with water.
(2)軟蝕刻處理:對比較樣品1之銅箔以100g/L之過硫酸鈉水溶液於35℃進行軟蝕刻處理2分鐘。對其他銅箔不進行軟蝕刻處理。
(2) Soft etching treatment: The copper foil of
(3)鹼處理:接著為了防止酸清洗所用的酸摻入,以1.2g/L之氫氧化鈉水溶液於40℃進行前處理(preconditioning)1分鐘。又,對比較樣品1以40g/L之氫氧化鈉水溶液於50℃進行鹼處理1分鐘。
(3) Alkali treatment: Next, in order to prevent the incorporation of acid used for acid cleaning, preconditioning was performed with a 1.2 g/L sodium hydroxide aqueous solution at 40° C. for 1 minute. Moreover, the
(4)氧化處理:對於比較樣品1以外的樣品,將進行過鹼處理之銅箔以氧化處理用水溶液(NaClO2 63g-NaOH 10.5g/L)於70℃進行氧化處理2分鐘。又,對於比較樣品1以不同的氧化處理用水溶液(NaClO2 120g-NaOH 40g/L)於75℃進行氧化處理3分鐘。上述處理後水洗銅箔。
(4) Oxidation treatment: For samples other than
(5)溶解處理:進行氧化處理後之銅箔用下述的0.1M水溶液以下述時間於55℃進行溶解處理。 (5) Dissolution treatment: The copper foil after the oxidation treatment was dissolved in the following 0.1 M aqueous solution at 55°C for the following time.
實施樣品1:甲基甘胺酸二乙酸三鈉、3分鐘 Implementation sample 1: trisodium methylglycine diacetate, 3 minutes
實施樣品2:HIDS、5分鐘 Implementation Sample 2: HIDS, 5 minutes
實施樣品3:GLDA、5分鐘 Implementation Sample 3: GLDA, 5 minutes
實施樣品4:EDTA、3分鐘 Implementation Sample 4: EDTA, 3 minutes
比較樣品1:EDTA、3分鐘 Comparative Sample 1: EDTA, 3 minutes
又,不對比較樣品2進行溶解處理,對比較樣品3以還原用水溶液(二甲基胺甲硼烷5g-氫氧化鈉5g/L)於23℃進行還原處理1分鐘。上述處理後水洗銅箔。
In addition, the
(6)後處理:僅對比較樣品1用3g/L之苯并三唑水溶液於70℃進行後處理1分鐘。此係為了防鏽。對其他銅箔未進行此處理。
(6) Post-treatment: Only
(7)剝離強度的測定:未進行上述任一個處理之未處理銅箔作為比較樣品4,對於實施樣品1~4及比較樣品1~4之各個銅箔,測試積層後的剝離強度(Initials)及酸處理後的剝離強度(Acid)。首先,對各個銅箔積層預浸體(Panasonic股份有限公司製R5670KJ),用真空高壓壓力機在真空中於210℃保持30分鐘,藉此得到測定試料(Initial)。為了測試對酸的耐性,將積層後的銅箔浸漬於60℃之HCl水溶液(4N)90分鐘,得到測定試料(Acid)。對上述測定試料以90°剝離試驗(日本工業規格(JIS)C5016)求出剝離強度(kgf/cm)。剝離強度越大表示預浸體與銅箔的密著性高。結果如第1表所示。
(7) Measurement of peel strength: The untreated copper foil without any of the above treatments was taken as the
(8)以X射線光電子能譜法(XPS)分析:對於實施樣品1~4及比較樣品1~4之各個銅箔,藉由XPS對應於深度求出Cu與O之比率。使用Quantera SXM(ULVAC-PHI公司製)作為測定裝置,及使用單色化AlKα(1486.6eV)作為激發X射線,對Survey Spectrum偵測之4個元素(C1s,N1s,O1s,Cu2p3)取得Narrow Spectrum。於深度方向以2.5分鐘為間隔進行Ar濺鍍12次,重複測定與濺鍍以取得資料。其結果如第1圖(顯示比較例1、2、實施例3、4作為代表)及第1表。又,各個測定係以下述條件進行。
(8) Analysis by X-ray Photoelectron Spectroscopy (XPS): For each of the copper foils of the
<Survey spectrum> <Survey spectrum>
X射線束直徑:100μm(25w15kV) X-ray beam diameter: 100μm (25w15kV)
Pass energy:280eV,1eV step Pass energy: 280eV, 1eV step
線分析:φ100μm*1200um Line analysis: φ100μm*1200um
累計次數 6次
<Narrow spectrum> <Narrow spectrum>
X射線束直徑:100μm(25w15kV) X-ray beam diameter: 100μm (25w15kV)
Pass energy:112eV,0.1eV step Pass energy: 112eV, 0.1eV step
線分析:φ100μm*1200um Line analysis: φ100μm*1200um
<Ar濺鍍條件> <Ar sputtering conditions>
加速電壓 1kV Accelerating voltage 1kV
照射面積 2x2mm Irradiation area 2x2mm
濺鍍速度 2.29nm/min(SiO2換算) Sputtering speed 2.29nm/min (SiO 2 conversion)
(9)掃描式電子顯微鏡對表面突起物之解析:對於實施樣品1~4及比較樣品1~4之各個銅箔,以掃描式電子顯微鏡(SEM)拍攝(如第2圖),計算截面之突起物的長度及數量。具體而言,突起物的長度係取得5個位置的SEM影像(FIB-SEM取5萬倍)(如第2A、C圖),在各個影像隨機選擇10個突起物,對於將突起物兩側之凹部的極小點連接之線,此線的中點與突起物之凸部的極大點的距離作為突起物的高度來計算(第3A圖),算出整體的平均值。又,突起物的數量係取得5個位置的SEM影像(FIB-SEM取3萬倍)(如第2B、D圖),對於相鄰的凹部將極小點連接之線,此線的中點與相鄰凹部之間存在之凸部的極大點的距離作為突起物的高度,此時計算高度為50nm以上之凸部的數量(第3B圖),算出整體的平均值。其結果如第1表所示。
(9) Analysis of surface protrusions by scanning electron microscope: For each copper foil of
(10)結果: (10) Results:
在比較樣品1及比較樣品3,Cu/O的比率高。此係顯示由於積層後銅成分容易在基材中擴散,故即使表面粗度大,密著性亦低。又,比較樣品2顯示在酸處理後的剝離強度變低,耐酸性降低,但此推測係因僅有氧化步驟故氧化銅量較多。實施樣品的銅箔均未有這樣的缺點。
In
實施例2:本實施例對進行過氧化處理之銅箔測試在溶解處理時pH值的影響。 Example 2: In this example, the effect of pH value during dissolution treatment on copper foil subjected to peroxide treatment was tested.
首先準備溶解處理液,該溶解處理液係在0.1M EDTA‧4Na‧4H2O溶液中添加4N H2SO4,調整至pH3.5~11之間的數個pH值所得到。對與實施例1同樣地進行氧化處理的銅箔,以上述溶解處理液於55℃進行溶解處理3分鐘,使用EM355B(D)(台光電子股份有限公司製)或R5670KJ作為預浸體,與實施例1同樣地測定剝離強度。 First, a dissolving treatment liquid was prepared, which was obtained by adding 4N H 2 SO 4 to a 0.1M EDTA·4Na·4H 2 O solution and adjusting to several pH values between pH 3.5 and 11. The copper foil subjected to the oxidation treatment in the same manner as in Example 1 was dissolved in the above-mentioned dissolution treatment solution at 55° C. for 3 minutes, using EM355B(D) (manufactured by Taiguang Electronics Co., Ltd.) or R5670KJ as a prepreg, and the same Example 1 The peel strength was measured in the same manner.
結果如第4圖所示,無論是使用哪一種預浸體的情況,剝離強度在pH值10.0附近達到最大,比其更酸或更鹼時密著性均降低。如此,由剝離強度的觀點而言,溶解處理較佳為pH9.0~10.5,更佳為pH9.8~10.2。 As a result, as shown in Fig. 4, regardless of which prepreg was used, the peel strength reached a maximum in the vicinity of the pH value of 10.0, and the adhesion decreased when it was more acidic or alkaline. Thus, from the viewpoint of peeling strength, pH 9.0 to 10.5 is preferable for the dissolution treatment, and pH 9.8 to 10.2 is more preferable.
接著,以SERA(Surface-Scan QC-100,ECI Technology公司)測定溶解所得之各個銅箔的氧化膜厚度。將硼酸水溶液(6.18g/L硼酸、9.55g/L 四硼酸鈉)作為接觸金屬表面之電解質,由-0.3V~-0.55V、-0.55V~-0.85V、-0.85V~-1.0V所需還原時間,使用下列公式分別計算Cu2O、CuO、Cu2S的厚度。(又,電流密度=90μA/cm2) Next, the oxide film thickness of each copper foil obtained by dissolving was measured by SERA (Surface-Scan QC-100, ECI Technology Co., Ltd.). The aqueous solution of boric acid (6.18g/L boric acid, 9.55g/L sodium tetraborate) is used as the electrolyte to contact the metal surface, and is determined by -0.3V~-0.55V, -0.55V~-0.85V, -0.85V~-1.0V The reduction time is required, and the thicknesses of Cu 2 O, CuO, and Cu 2 S are calculated using the following formulas, respectively. (Also, current density=90 μA/cm 2 )
Cu2O(nm)=0.0124*電流密度(μA/cm2)*還原時間(sec)*0.1 Cu 2 O(nm)=0.0124*current density(μA/cm 2 )*reduction time(sec)*0.1
CuO(nm)=0.00639*電流密度(μA/cm2)*還原時間(sec)*0.1 CuO(nm)=0.00639*current density(μA/cm 2 )*reduction time(sec)*0.1
Cu2S(nm)=0.0147*電流密度(μA/cm2)*還原時間(sec)*0.1 Cu 2 S(nm)=0.0147*current density(μA/cm 2 )*reduction time(sec)*0.1
結果如第5圖所示,氧化膜厚度在pH10.41達到最大,在酸性及鹼性方面變薄。構成氧化膜之氧化銅的種類與pH值無關,均以CuO為主體。如此,由氧化銅之形成狀態而言,溶解處理較佳為pH9.0~10.5,更佳為pH9.15~10.41。 As a result, as shown in Fig. 5, the thickness of the oxide film reaches the maximum at pH 10.41, and becomes thinner in acidity and alkalinity. The type of copper oxide constituting the oxide film is mainly CuO regardless of pH value. In this way, the dissolution treatment is preferably pH 9.0 to 10.5, more preferably pH 9.15 to 10.41, in terms of the state of formation of copper oxide.
實施例3:本實施例將氧化處理及溶解處理之處理時間作各種變更,並測試其影響。 Example 3: In this example, various changes were made to the treatment time of the oxidation treatment and the dissolution treatment, and their effects were tested.
首先,用與實施例1之實施樣品4同樣的步驟,僅改變處理時間來進行氧化處理及溶解處理。又,氧化處理及溶解處理的時間分別設為1分鐘、2分鐘、3分鐘、5分鐘、7分鐘、10分鐘。算出各個時間中,溶解處理所溶解之氧化銅量相對於氧化處理所產生之氧化銅量作為溶解率(%),又,與實施例2同樣地以SERA測量包含氧化銅之層的厚度,將該等之組合作為影響因素的粗化處理後之銅箔係作為樣品,與實施例1同樣地測定剝離強度。結果如第6圖所示。 First, oxidation treatment and dissolution treatment were performed in the same procedure as in Example 1, except that the treatment time was changed. In addition, the times of the oxidation treatment and the dissolution treatment were set to 1 minute, 2 minutes, 3 minutes, 5 minutes, 7 minutes, and 10 minutes, respectively. In each time, the amount of copper oxide dissolved by the dissolution treatment relative to the amount of copper oxide produced by the oxidation treatment was calculated as the dissolution rate (%), and the thickness of the layer containing copper oxide was measured by SERA in the same manner as in Example 2. The copper foil after the roughening treatment in which the combination of these factors is an influencing factor was used as a sample, and the peel strength was measured in the same manner as in Example 1. The results are shown in Figure 6.
形成剝離強度為0.15以上之銅箔者,係有處理銅表面使氧化銅之溶解率為35~99%且CuO的厚度為4~150nm的情況,而大部分的情況下,氧化銅之溶解率為77~99%且CuO的厚度在8~50nm的範圍之內。進行溶解處理以達到此範圍,藉此,銅表面與預浸體之剝離強度高且減少處理不均。 When forming a copper foil with a peel strength of 0.15 or more, the copper surface is treated so that the dissolution rate of copper oxide is 35 to 99% and the thickness of CuO is 4 to 150 nm. In most cases, the dissolution rate of copper oxide is is 77~99% and the thickness of CuO is in the range of 8~50nm. The dissolution treatment is performed to reach this range, whereby the peel strength between the copper surface and the prepreg is high and treatment unevenness is reduced.
實施例4:本實施例測試對銅箔進行氧化處理之時間的影響。 Example 4: In this example, the effect of the time of oxidizing copper foil was tested.
除了將氧化時間設為1分鐘、2分鐘、4分鐘以外,其餘與實施例3同樣地進行銅箔的氧化處理後,進行溶解處理,使用EM355B(D)或R5670KJ作為預浸體,與實施例1同樣地測定剝離強度。溶解處理後進行還原處理之樣品作為比較例,測定其剝離強度。 After the oxidation treatment of copper foil was carried out in the same manner as in Example 3, except that the oxidation time was set to 1 minute, 2 minutes, and 4 minutes, a dissolution treatment was performed, and EM355B(D) or R5670KJ was used as a prepreg, and the same as in Example 3 1 The peel strength was measured in the same manner. The sample which was subjected to reduction treatment after dissolution treatment was used as a comparative example, and its peel strength was measured.
如第7圖所示,僅進行溶解處理者無論氧化處理時間如何,幾乎所有樣品的剝離強度為0.15以上,可得到良好的與預浸體之密著性,但進行還原處理之情況下,有樣品無法得到良好的與預浸體之密著性。 As shown in Fig. 7, the peeling strength of almost all the samples was 0.15 or more regardless of the oxidation treatment time, and good adhesion to the prepreg could be obtained, but in the case of the reduction treatment, there were The sample could not obtain good adhesion to the prepreg.
如此一來,以本發明的方法,無論氧化處理時間如何,可以得到與預浸體良好的密著性。 In this way, according to the method of the present invention, good adhesion to the prepreg can be obtained regardless of the oxidation treatment time.
產業利用性:根據本發明,可以提供一種具有粗化處理後之銅表面的物體。 Industrial Applicability: According to the present invention, an object having a roughened copper surface can be provided.
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| JP2017217776A JP7013003B2 (en) | 2017-11-10 | 2017-11-10 | Objects with a roughened copper surface |
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| JP6726780B1 (en) * | 2019-03-04 | 2020-07-22 | ナミックス株式会社 | Copper foil, negative electrode current collector for lithium ion battery including the same, and method for producing the same |
| KR20220148865A (en) * | 2020-02-28 | 2022-11-07 | 나믹스 가부시끼가이샤 | Composite copper member with voids |
| KR102704093B1 (en) * | 2021-04-15 | 2024-09-06 | 고려대학교 산학협력단 | an metal electrode for a secondary battery and the secondary battery using the same |
| WO2022230803A1 (en) * | 2021-04-30 | 2022-11-03 | Rimtec株式会社 | Metal-resin layered body and method for manufacturing metal-resin layered body |
| TW202307270A (en) * | 2021-06-09 | 2023-02-16 | 德商德國艾托特克有限兩合公司 | A composite and a method for manufacturing a composite of a copper layer and an organic layer |
| CN118367151A (en) * | 2023-01-17 | 2024-07-19 | 宁德时代新能源科技股份有限公司 | Current collector, preparation method thereof, secondary battery, battery module and power utilization device |
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| JPH0738254A (en) * | 1993-07-22 | 1995-02-07 | Mitsubishi Gas Chem Co Inc | Treatment of inner layer copper foil |
| TW201736104A (en) * | 2016-03-03 | 2017-10-16 | 三井金屬鑛業股份有限公司 | Production method for copper-clad laminate plate |
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| EP2341167B1 (en) * | 2008-10-27 | 2018-10-24 | Hitachi Chemical Company, Ltd. | Method for surface treatment of copper and copper material |
| KR101574475B1 (en) * | 2013-02-14 | 2015-12-03 | 미쓰이금속광업주식회사 | Surface-treated copper foil, and copper-clad laminate obtained using surface-treated copper foil |
| CN103435089A (en) * | 2013-07-16 | 2013-12-11 | 上海应用技术学院 | Spherical cuprous oxide micro-nano particles with roughness surface and preparation method thereof |
| MY182166A (en) * | 2013-09-20 | 2021-01-18 | Namics Corp | Copper foil, copper foil with carrier foil, and copper-clad laminate |
| JP6110581B2 (en) * | 2014-12-05 | 2017-04-05 | 三井金属鉱業株式会社 | Surface-treated copper foil, copper-clad laminate and printed wiring board for high-frequency signal transmission circuit formation |
| KR101821601B1 (en) * | 2015-09-30 | 2018-01-24 | 미쓰이금속광업주식회사 | Roughened copper foil, copper clad laminate, and printed circuit board |
| JP2017092152A (en) * | 2015-11-05 | 2017-05-25 | 日立化成デュポンマイクロシステムズ株式会社 | Multilayer body, method for manufacturing the same, and semiconductor device |
| US10244635B2 (en) * | 2016-03-03 | 2019-03-26 | Mitsui Mining & Smelting Co., Ltd. | Production method for copper-clad laminate plate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0738254A (en) * | 1993-07-22 | 1995-02-07 | Mitsubishi Gas Chem Co Inc | Treatment of inner layer copper foil |
| TW201736104A (en) * | 2016-03-03 | 2017-10-16 | 三井金屬鑛業股份有限公司 | Production method for copper-clad laminate plate |
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