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TWI767549B - Backlight device - Google Patents

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Publication number
TWI767549B
TWI767549B TW110103941A TW110103941A TWI767549B TW I767549 B TWI767549 B TW I767549B TW 110103941 A TW110103941 A TW 110103941A TW 110103941 A TW110103941 A TW 110103941A TW I767549 B TWI767549 B TW I767549B
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light
backlight device
emitting diodes
protruding structures
width
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TW110103941A
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Chinese (zh)
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TW202232144A (en
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楊凱翔
劉古煥
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云光科技股份有限公司
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Publication of TW202232144A publication Critical patent/TW202232144A/en

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Abstract

The invention discloses a backlight device. The backlight device includes a light source base and a light homogenizing member. The light homogenizing member is formed on one side of the light source base. The light homogenizing member includes a main body and a plurality of reflective structures. A plurality of protruding structures are formed on one of the wide side surfaces of the main body. Each reflective structure includes a plurality of filling parts and a connecting part, each filling part fills the gap between two adjacent protruding structures, and the connecting part connects the plurality of filling parts. The thickness of the homogenizing member is less than 1 mm, and the width of each protruding structure is not greater than 100 microns. The thickness of each connection part is not greater than 30 microns. Through the arrangement of the light homogenizing member, the uniformity of light output of the backlight device can be improved.

Description

背光裝置Backlight device

本發明涉及一種背光裝置,特別是一種厚度不大於5公釐(mm)的直下式背光裝置。The present invention relates to a backlight device, in particular to a direct type backlight device with a thickness not greater than 5 millimeters (mm).

隨著消費需求,現有背光裝置整體厚度已經被要求低於5公釐(mm),在厚度不大於5公釐(mm)的情況下,傳統的背光裝置存在有均光效果不佳的問題。With consumer demand, the overall thickness of the existing backlight device has been required to be less than 5 millimeters (mm). When the thickness is not greater than 5 millimeters (mm), the traditional backlight device has the problem of poor light uniformity.

本發明公開一種背光裝置,主要用以改善習知的背光裝置,在整體厚度被要求不大於5公釐(mm)的情況下,容易發生均光效果不佳的問題。The invention discloses a backlight device, which is mainly used to improve the conventional backlight device. When the overall thickness is required to be no greater than 5 millimeters (mm), the problem of poor uniform light effect is likely to occur.

本發明的其中一實施例公開一種背光裝置,其包含:一光源座及一均光構件。光源座包含一基板及多個發光二極體,多個發光二極體彼此間隔地設置於基板;各個發光二極體的寬度小於0.4公釐(mm),各個發光二極體的長度小於0.4公釐(mm)。均光構件設置於光源座的上方,均光構件的厚度小於1公釐(mm),均光構件包含:本體及多個反射結構。本體的其中一寬側面形成有多個凸出結構,各個凸出結構緊密地排列形成於寬側面,而彼此相鄰的兩個凸出結構之間未有間隙;各個凸出結構為角錐結構或半球狀結構,且各個凸出結構的寬度為發光二極體的寬度或長度的1/10倍至1倍,且各個凸出結構的寬度不大於100微米(um)。各個反射結構包含多個填充部及一連接部,多個填充部與連接部相連接,各個反射結構的多個填充部對應填平一部分的多個凸出結構之間的空隙;各個反射結構能反射發光二極體所發出的光束;各個發光二極體朝向寬側面的方向正投影的正投影區域,對應位於其中一個反射結構朝向寬側面的方向正投影的正投影區域內;各個連接部的厚度不大於30微米。其中,光源座所發出的光束進入均光構件後,一部分的光束將直接穿過本體而朝向本體相反於光源座的方向射出,一部分的光束將被至少一個填充部反射,一部分的光束將被至少一個連接部反射。One embodiment of the present invention discloses a backlight device, which includes: a light source base and a light homogenizing member. The light source base includes a substrate and a plurality of light-emitting diodes, and the plurality of light-emitting diodes are arranged on the substrate at intervals; the width of each light-emitting diode is less than 0.4 millimeters (mm), and the length of each light-emitting diode is less than 0.4 millimeters (mm). The light homogenizing member is arranged above the light source base, the thickness of the light homogenizing member is less than 1 millimeter (mm), and the light homogenizing member includes: a main body and a plurality of reflection structures. One of the wide side surfaces of the body is formed with a plurality of protruding structures, each protruding structure is closely arranged on the wide side, and there is no gap between the two adjacent protruding structures; each protruding structure is a pyramid structure or A hemispherical structure, and the width of each protruding structure is 1/10 times to 1 time of the width or length of the light-emitting diode, and the width of each protruding structure is not greater than 100 micrometers (um). Each reflective structure includes a plurality of filling parts and a connecting part, the plurality of filling parts are connected with the connecting part, and the plurality of filling parts of each reflective structure correspond to fill in the gaps between a part of the plurality of protruding structures; each reflective structure can Reflect the light beams emitted by the light-emitting diodes; the orthographic projection area of each light-emitting diode toward the wide side face is correspondingly located in the orthographic projection area of one of the reflective structures facing the wide side face; The thickness is not more than 30 microns. Wherein, after the light beam emitted by the light source seat enters the light homogenizing member, a part of the light beam will directly pass through the body and be emitted towards the direction of the body opposite to the light source seat, a part of the light beam will be reflected by at least one filling part, and a part of the light beam will be A joint reflection.

綜上所述,本發明的背光裝置,通過於本體形成多個凸出結構,以及使各個反射結構具有填充部及連接部等設計,可以讓背光裝置在整體厚度不大於5公釐(mm)的情況下,仍可以達到相對較佳的均光效果。To sum up, in the backlight device of the present invention, by forming a plurality of protruding structures on the main body and designing each reflective structure with a filling portion and a connecting portion, the overall thickness of the backlight device can be less than 5 millimeters (mm) Under the circumstance, a relatively good uniform light effect can still be achieved.

為能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,但是此等說明與附圖僅用來說明本發明,而非對本發明的保護範圍作任何的限制。In order to further understand the features and technical content of the present invention, please refer to the following detailed description and accompanying drawings of the present invention, but these descriptions and drawings are only used to illustrate the present invention, rather than make any claims to the protection scope of the present invention. limit.

於以下說明中,如有指出請參閱特定圖式或是如特定圖式所示,其僅是用以強調於後續說明中,所述及的相關內容大部份出現於該特定圖式中,但不限制該後續說明中僅可參考所述特定圖式。In the following description, if it is indicated to refer to a specific figure or as shown in a specific figure, it is only used for emphasis in the subsequent description, and most of the related content mentioned appears in the specific figure, However, it is not limited that only the specific drawings may be referred to in this subsequent description.

請一併參閱圖1至圖4,本發明的背光裝置100包含:一光源座1及一均光構件2,均光構件2設置於光源座1的一側,而光源座1所發出的光束,將通過均光構件2後向外射出。需特別說明的是,背光裝置100應用於各式顯示裝置中時,可以是依據需求,使背光裝置100包含有其他各種構件,於此不加以限制。Please refer to FIG. 1 to FIG. 4 together. The backlight device 100 of the present invention includes a light source base 1 and a light homogenizing member 2. The light homogenizing member 2 is disposed on one side of the light source base 1, and the light beam emitted by the light source base 1 , will pass through the light homogenizing member 2 and then be emitted outward. It should be noted that, when the backlight device 100 is applied to various display devices, the backlight device 100 may include other various components according to requirements, which is not limited herein.

光源座1包含一基板11、多個發光二極體12及一封裝體13。基板11的材料例如可以是選自玻璃、玻璃纖維板(FR4)、BT樹脂等,於此不加以限制。多個發光二極體12彼此間隔地設置於基板11。在較佳的實施中,各個發光二極體12可以是倒裝晶片(Flip Chip)。在實際應用中,各個發光二極體12可以是能發出波長介於420~480奈米的光束,且封裝體13內可以是依據需求設置有擴散粒子、色轉換粒子,於此不加以限制,當然,封裝體13也可以是完全不設置有任何粒子。在封裝體13完全不設置有任何粒子的實施例中,封裝體13的折射率可以是介於1.4~1.6。在封裝體13內設置有色轉換粒子的實施例中,各個發光二極體12所發出波長介於420~480奈米的光束,通過摻有色轉換粒子的封裝體13後,將轉換為白光向外射出。在具體的實施應用中,所述封裝體13例如可以是由矽樹脂、環氧樹脂等材料製成;所述色轉換粒子例如是包含磷光體、半導體奈米晶體(Ⅱ-Ⅵ族或Ⅲ-Ⅴ族化合物)等材料。The light source base 1 includes a substrate 11 , a plurality of light emitting diodes 12 and a package body 13 . The material of the substrate 11 can be selected from, for example, glass, glass fiber board (FR4), BT resin, etc., which is not limited thereto. The plurality of light emitting diodes 12 are provided on the substrate 11 at intervals. In a preferred implementation, each light emitting diode 12 may be a flip chip. In practical applications, each light-emitting diode 12 can be capable of emitting a light beam with a wavelength of 420-480 nm, and the package body 13 can be provided with diffusing particles and color-converting particles according to requirements, which is not limited here. Of course, the package body 13 may not be provided with any particles at all. In an embodiment in which the package body 13 is not provided with any particles at all, the refractive index of the package body 13 may be between 1.4 and 1.6. In the embodiment in which the color conversion particles are arranged in the package body 13 , the light beams emitted by each light-emitting diode 12 with a wavelength of 420-480 nm will be converted into white light after passing through the package body 13 doped with the color conversion particles. shoot. In specific implementation applications, the package body 13 can be made of materials such as silicone resin, epoxy resin, etc.; the color conversion particles include phosphors, semiconductor nanocrystals (II-VI group or III- Group V compounds) and other materials.

如圖2所示,在實際應用中,各個發光二極體12的寬度12W可以介於0.1~0.4公釐(mm),各個發光二極體12的長度12D可以是介於0.1~0.4公釐(mm),各個發光二極體12的可以是高度12H介於0.05~0.2公釐(mm)。較佳地,各個發光二極體12可以是次毫米發光二極體(Mini LED),而封裝體13的可以是厚度介於0.1~0.6公釐(mm)。As shown in FIG. 2 , in practical applications, the width 12W of each light-emitting diode 12 may be between 0.1 and 0.4 millimeters (mm), and the length 12D of each light-emitting diode 12 may be between 0.1 and 0.4 mm. (mm), the height 12H of each light emitting diode 12 may be between 0.05-0.2 millimeters (mm). Preferably, each light emitting diode 12 may be a sub-millimeter light emitting diode (Mini LED), and the thickness of the package body 13 may range from 0.1 to 0.6 millimeters (mm).

如圖1至圖4所示,均光構件2設置於光源座1的上方,而光源座1所發出的光束大部分將直接進入均光構件2,進入均光構件2的大部分光束,將由均光構件2相反於光源座1的一側向外射出。於本實施例圖中並未繪示出用來將均光構件2固定於光源座1的上方的構件,在實際應用中,均光構件2可以是依據需求,通過各式結構或方式固定於光源座1的上方。As shown in FIG. 1 to FIG. 4 , the homogenizing member 2 is arranged above the light source base 1, and most of the light beams emitted by the light source base 1 will directly enter the homogenizing member 2, and most of the light beams entering the homogenizing member 2 will be The light homogenizing member 2 projects outward from the side opposite to the light source base 1 . The components used to fix the light homogenizing member 2 above the light source base 1 are not shown in the drawings of this embodiment. Above the light source base 1.

均光構件2包含:一本體21及多個反射結構22。在實際應用中,本體21可以是透明結構,而本體21內是不摻有任何擴散粒子,且本體21對於發光二極體12所發出的光束具有良好的穿透率,但不以此為限;在不同的實施例中,本體21內也可以是摻有擴散粒子。本體21的材料例如可以是聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)、聚對苯二甲酸乙二醇脂(PET)等,於此不加以限制。The light homogenizing member 2 includes: a main body 21 and a plurality of reflecting structures 22 . In practical applications, the body 21 can be a transparent structure, and the body 21 is not doped with any diffusing particles, and the body 21 has a good transmittance for the light beam emitted by the light-emitting diode 12, but not limited to this ; In different embodiments, the body 21 may also be doped with diffusion particles. The material of the body 21 can be, for example, polycarbonate (PC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), etc., which is not limited herein.

本體21的其中一寬側面可以是定義為一第一寬側面211,本體21於第一寬側面211形成有多個凸出結構213,各個凸出結構213緊密地排列形成於第一寬側面211,而彼此相鄰的兩個凸出結構213於第一寬側面211未有間隙。多個凸出結構213是與本體21一體成型地設置,而多個凸出結構213可以是於製造本體21的過程中,利用滾壓等方式,於本體21的第一寬側面211形成。各個凸出結構213的寬度213D為發光二極體12的寬度12W(如圖2所示)或長度12D(如圖2所示)的1/10倍至1倍,且各個凸出結構213的寬度213D不大於50微米(um)。One of the wide side surfaces of the main body 21 can be defined as a first wide side surface 211 . The main body 21 is formed with a plurality of protruding structures 213 on the first wide side surface 211 , and each protruding structure 213 is closely arranged on the first wide side surface 211 . , and the two protruding structures 213 adjacent to each other have no gap on the first wide side surface 211 . The plurality of protruding structures 213 are integrally formed with the main body 21 , and the plurality of protruding structures 213 may be formed on the first wide side 211 of the main body 21 by rolling or other methods during the manufacturing process of the main body 21 . The width 213D of each protruding structure 213 is 1/10 times to 1 times the width 12W (as shown in FIG. 2 ) or the length 12D (as shown in FIG. 2 ) of the light emitting diode 12 , and the width of each protruding structure 213 is The width 213D is not greater than 50 micrometers (um).

在實際應用中,各個凸出結構213為角錐結構或半球狀結構。舉例來說,如圖3所示,各個凸出結構213例如是三角錐結構,而於本體21形成有多個凸出結構213的一側的俯視圖中,將可以看見各個三角錐結構的任一個底邊是連接另一個三角錐結構的底邊,而各個凸出結構213是緊密地排列於本體21的寬側面;其中,為三角錐結構的各個凸出結構213的寬度213D是發光二極體12的寬度12W(如圖2所示)或長度12D(如圖2所示)的1/10倍至1倍,且各個凸出結構213的寬度213D不大於50微米(um)。在各個凸出結構213為角錐結構的實施例中,各個凸出結構213包含一底面及多個斜面,較佳地,各個凸出結構213的底面與任一個斜面的夾角是介於45~75度。在各個凸出結構213為半球狀結構的實施例中,各個凸出結構213可以半圓球狀結構或半橢圓球狀結構等,於此不加以限制。In practical applications, each protruding structure 213 is a pyramid structure or a hemispherical structure. For example, as shown in FIG. 3 , each protruding structure 213 is, for example, a triangular pyramid structure, and in the top view of the side of the main body 21 where a plurality of protruding structures 213 are formed, any one of the various triangular pyramid structures can be seen The bottom edge is connected to the bottom edge of another triangular pyramid structure, and each protruding structure 213 is closely arranged on the wide side of the body 21; wherein, the width 213D of each protruding structure 213 of the triangular pyramid structure is the light emitting diode The width 12W (as shown in FIG. 2 ) or the length 12D (as shown in FIG. 2 ) of 12 is 1/10 times to 1 times, and the width 213D of each protruding structure 213 is not greater than 50 micrometers (um). In the embodiment in which each protruding structure 213 is a pyramid structure, each protruding structure 213 includes a bottom surface and a plurality of inclined surfaces. Preferably, the included angle between the bottom surface of each protruding structure 213 and any inclined surface is between 45-75 Spend. In the embodiment in which each protruding structure 213 is a hemispherical structure, each protruding structure 213 can be a hemispherical structure or a semielliptical spherical structure, etc., which is not limited herein.

如圖5所示,在不同的實施例中,各個凸出結構213也可以是四角錐結構;其中,各個凸出結構213的寬度213D是發光二極體12的寬度12W(如圖2所示)或長度12D(如圖2所示)的1/10倍至1倍,且各個凸出結構213的寬度213D不大於50微米(um)。如圖6所示,在另一實施例中,各個凸出結構213也可以是六角錐結構;其中,各個凸出結構213的寬度213D是發光二極體12的寬度12W(如圖2所示)或長度12D(如圖2所示)的1/10倍至1倍,且各個凸出結構213的寬度213D不大於100微米(um)。各個凸出結構213相對於第一寬側面211的高度213H可以是介於10微米(um)至50微米(um)之間;各個凸出結構213的寬度213D可以是介於10微米(um)至100微米(um)之間。As shown in FIG. 5 , in different embodiments, each protruding structure 213 may also be a quadrangular pyramid structure; wherein, the width 213D of each protruding structure 213 is the width 12W of the light emitting diode 12 (as shown in FIG. 2 ) ) or 1/10 times to 1 times the length 12D (as shown in FIG. 2 ), and the width 213D of each protruding structure 213 is not greater than 50 micrometers (um). As shown in FIG. 6 , in another embodiment, each protruding structure 213 may also be a hexagonal pyramid structure; wherein, the width 213D of each protruding structure 213 is the width 12W of the light emitting diode 12 (as shown in FIG. 2 ) ) or 1/10 times to 1 times the length 12D (as shown in FIG. 2 ), and the width 213D of each protruding structure 213 is not greater than 100 micrometers (um). The height 213H of each protruding structure 213 relative to the first wide side 211 may be between 10 micrometers (um) and 50 micrometers (um); the width 213D of each protruding structure 213 may be between 10 micrometers (um) to 100 micrometers (um).

如圖1、圖3及圖4所示,各個反射結構22能反射發光二極體12所發出的光束。各個反射結構22包含多個填充部221及一連接部222,多個填充部221與連接部222相連接,各個反射結構22的多個填充部221對應填平一部分的多個凸出結構213之間的空隙G。具體來說,各個反射結構22可以是由反射油墨固化所形成,而反射油墨可以是利用噴墨、網版印刷等方式,形成於本體21具有多個凸出結構213的一側。當然,各個反射結構22可以是任何可以用來反射發光二極體12所發出的光束的結構,而不侷限為白色反射油墨。如圖1所示,在較佳的實施例中,各個連接部222的厚度222H可以是介於1微米(um)至30微米(um)之間。As shown in FIG. 1 , FIG. 3 and FIG. 4 , each reflection structure 22 can reflect the light beams emitted by the light emitting diodes 12 . Each reflective structure 22 includes a plurality of filling parts 221 and a connecting part 222 , the filling parts 221 are connected with the connecting part 222 , and the filling parts 221 of each reflective structure 22 correspond to a part of the protruding structures 213 . Gap between. Specifically, each reflective structure 22 can be formed by curing reflective ink, and the reflective ink can be formed on the side of the body 21 having the plurality of protruding structures 213 by means of inkjet, screen printing, or the like. Of course, each reflective structure 22 can be any structure that can be used to reflect the light beam emitted by the light emitting diode 12, and is not limited to white reflective ink. As shown in FIG. 1 , in a preferred embodiment, the thickness 222H of each connecting portion 222 may be between 1 micrometer (um) and 30 micrometers (um).

如圖3及圖4所示,在實際應用中,於均光構件2相反於光源座1的一側觀看均光構件2的俯視圖中,各個反射結構22的外型可以是依據需求變化,只要各個發光二極體12朝向本體21形成多個凸出結構213的第一寬側面的方向正投影的正投影區域12A,位在相對應的反射結構22朝向本體21的第一寬側面的方向正投影的正投影區域22A內即可。較佳地,各個發光二極體12朝向本體21形成多個凸出結構213的第一寬側面的方向正投影的正投影區域中,可以是對應具有至少6個凸出結構213。As shown in FIG. 3 and FIG. 4 , in practical application, when viewing the top view of the light-homing member 2 from the side of the light-homing member 2 opposite to the light source base 1 , the shape of each reflective structure 22 can be changed according to the requirements, as long as Each light-emitting diode 12 forms an orthographic projection area 12A in the direction of the orthographic projection of the first wide side of the plurality of protruding structures 213 toward the body 21 , and is located in the direction of the corresponding reflection structure 22 toward the first wide side of the body 21 . The projected orthographic projection area 22A is sufficient. Preferably, each light-emitting diode 12 may have at least 6 protruding structures 213 in the orthographic projection area in the direction of the orthographic projection of the first wide side surfaces of the plurality of protruding structures 213 formed toward the body 21 .

如圖1所示,在較佳的實施例中,若相鄰的兩個發光二極體12的中心軸CP彼此間的水平距離定義為一間隔距離P,則各個連接部222的寬度222D是不小於間隔距離P的八分之一,且各個連接部222的寬度222D不大於間隔距離P的二分之一,如此,將可得到相對較佳的均光效果。較佳地,間隔距離P可以是介於2~6公釐(mm)。在較佳的應用中,均光構件2的厚度2H不大於1公釐,亦即,本體21的厚度21H、各個凸出結構213相對於第一寬側面211的高度213H與各個反射結構22的連接部222的厚度222H和不大於1公釐(mm)。As shown in FIG. 1 , in a preferred embodiment, if the horizontal distance between the central axes CP of two adjacent light-emitting diodes 12 is defined as a separation distance P, the width 222D of each connecting portion 222 is The width 222D of each connecting portion 222 is not less than one-eighth of the separation distance P, and the width 222D of each connection portion 222 is not greater than one-half of the separation distance P, so that a relatively good light homogenization effect can be obtained. Preferably, the separation distance P may be between 2 and 6 millimeters (mm). In a preferred application, the thickness 2H of the light homogenizing member 2 is not greater than 1 mm, that is, the thickness 21H of the body 21 , the height 213H of each protruding structure 213 relative to the first wide side 211 and the height 213H of each reflective structure 22 The thickness 222H of the connecting portion 222 is not greater than 1 millimeter (mm).

值得一提得是,在圖3中,是以單一個反射結構22對應遮蔽6個為三角錐結構的凸出結構213,但單一個反射結構22對應遮蔽的凸出結構213的數量不以此為限,在實際應用中,可以是依據各個發光二極體的尺寸及各個凸出結構213的尺寸對應修改。相同地,在圖5中,是以單一個反射結構22對應遮蔽4個為四角錐結構的凸出結構213,但單一個反射結構22所遮蔽的凸出結構213不以此為限。在圖6中,是以單一個反射結構22對應遮蔽4個為六角錐結構的凸出結構213,但單一個反射結構22所遮蔽的凸出結構213不以此為限。It is worth mentioning that, in FIG. 3 , a single reflective structure 22 is used to shield 6 protruding structures 213 that are triangular pyramid structures, but the number of protruding structures 213 corresponding to a single reflective structure 22 is not the same. As a limitation, in practical applications, it may be modified according to the size of each light-emitting diode and the size of each protruding structure 213 . Similarly, in FIG. 5 , four protruding structures 213 having a quadrangular pyramid structure are correspondingly shielded by a single reflective structure 22 , but the protruding structures 213 shielded by a single reflective structure 22 are not limited thereto. In FIG. 6 , a single reflective structure 22 shields four protruding structures 213 having a hexagonal pyramid structure correspondingly, but the protruding structures 213 shielded by a single reflective structure 22 are not limited to this.

依上所述,光源座1所發出的光束進入均光構件2後,一部分的光束將直接穿過本體21而朝向本體21相反於光源座1的方向射出,一部分的光束將被至少一個填充部221反射,一部分的光束將被至少一個連接部222反射,而光源座1的光束通過均光構件2後,將可以呈現出相對較佳的均光效果。具體來說,背光裝置100在未設置有多個凸出結構213及多個反射結構22的狀況下,背光裝置100最亮位置的亮度與最暗位置的亮度兩者差約為20%;在本體21設置有多個凸出結構213,但未設置有多個反射結構22的狀況下,背光裝置100的最亮位置的亮度與最暗位置的亮度兩者差將降至15%以下;在本體21同時設置有多個凸出結構213及反射結構22時,背光裝置100的最亮位置的亮度與最暗位置的亮度兩者差將降至5%以下。According to the above, after the light beam emitted by the light source base 1 enters the light homogenizing member 2, a part of the light beam will directly pass through the main body 21 and exit toward the main body 21 in a direction opposite to the light source base 1, and a part of the light beam will be filled by at least one filling part. 221, a part of the light beam will be reflected by at least one connecting part 222, and after the light beam of the light source base 1 passes through the light homogenizing member 2, a relatively good light homogenization effect can be exhibited. Specifically, when the backlight device 100 is not provided with the plurality of protruding structures 213 and the plurality of reflective structures 22, the difference between the brightness at the brightest position and the brightness at the darkest position of the backlight device 100 is about 20%; In the case where the body 21 is provided with a plurality of protruding structures 213, but is not provided with a plurality of reflective structures 22, the difference between the brightness at the brightest position and the brightness at the darkest position of the backlight device 100 will be reduced to less than 15%; When the body 21 is provided with a plurality of protruding structures 213 and reflective structures 22 at the same time, the difference between the brightness at the brightest position and the brightness at the darkest position of the backlight device 100 will be reduced to less than 5%.

請參閱圖7,其顯示為本發明的背光裝置的第二實施例的剖面示意圖。本實施例與前述實施例最大不同之處在於:本體21相反於第一寬側面211的另一個寬側面定義為一第二寬側面212,本體21於第二寬側面212形成有多個輔助凸出結構214,各個輔助凸出結構214緊密地排列形成於第二寬側面212,而彼此相鄰的兩個輔助凸出結構214之間未有間隙。在實際應用中,各個輔助凸出結構214的外型及尺寸,可以是與各個凸出結構213的外型及尺寸完全相同,但不以此為限。均光構件2設置於光源座1的一側時,第二寬側面212是面對光源座1設置,而多個輔助凸出結構214則是面對光源座1設置,各個凸出結構213及反射結構22則是位於本體21相反於光源座1的一側。Please refer to FIG. 7 , which is a schematic cross-sectional view of a second embodiment of the backlight device of the present invention. The biggest difference between this embodiment and the previous embodiment is that the other wide side surface of the main body 21 opposite to the first wide side surface 211 is defined as a second wide side surface 212 , and a plurality of auxiliary protrusions are formed on the second wide side surface 212 of the main body 21 . Each of the auxiliary protruding structures 214 is closely arranged and formed on the second wide side surface 212 , and there is no gap between the two auxiliary protruding structures 214 adjacent to each other. In practical applications, the shape and size of each auxiliary protruding structure 214 may be exactly the same as the shape and size of each protruding structure 213 , but not limited thereto. When the light homogenizing member 2 is disposed on one side of the light source base 1, the second wide side surface 212 is disposed facing the light source base 1, and the plurality of auxiliary protruding structures 214 are disposed facing the light source base 1. Each protruding structure 213 and The reflection structure 22 is located on the side of the main body 21 opposite to the light source base 1 .

在較佳的應用中,均光構件2的厚度2H不大於1公釐,亦即,本體21的厚度21H、各個輔助凸出結構214相對於第二寬側面212的高度214H、各個凸出結構213相對於第一寬側面211的高度213H與各個反射結構22的連接部222的厚度222H和不大於1公釐(mm);各個輔助凸出結構214可以為角錐結構或半球狀結構,且各個輔助凸出結構214的寬度214D為發光二極體12的寬度12W(如圖2所示)或長度12D(如圖2所示)的1/10倍至1倍,且各個輔助凸出結構214的寬度214D不大於100微米(um)。In a preferred application, the thickness 2H of the light homogenizing member 2 is not greater than 1 mm, that is, the thickness 21H of the main body 21 , the height 214H of each auxiliary protruding structure 214 relative to the second wide side 212 , and the height 214H of each protruding structure The height 213H of 213 relative to the first wide side surface 211 and the thickness 222H of the connecting portion 222 of each reflective structure 22 are not greater than 1 millimeter (mm); each auxiliary protruding structure 214 can be a pyramid structure or a hemispherical structure, and each The width 214D of the auxiliary protruding structure 214 is 1/10 times to 1 times the width 12W (as shown in FIG. 2 ) or the length 12D (as shown in FIG. 2 ) of the light emitting diode 12 , and each auxiliary protruding structure 214 The width 214D is not greater than 100 micrometers (um).

通過多個輔助凸出結構214的設置,將可以更進一步地提升背光裝置100的出光均勻度,具體來說,前述實施例的背光裝置100的最亮位置的亮度及最暗位置的亮度兩者差為5%以下,而本實施例的背光裝置100的最亮位置的亮度與最暗位置的亮度兩者差將降至3%以下。Through the arrangement of the plurality of auxiliary protruding structures 214 , the uniformity of the light output of the backlight device 100 can be further improved. Specifically, the brightness of the brightest position and the brightness of the darkest position of the backlight device 100 of the foregoing embodiments are both improved. The difference is less than 5%, and the difference between the brightness at the brightest position and the brightness at the darkest position of the backlight device 100 of this embodiment will be reduced to less than 3%.

請參閱圖8,其顯示為本發明的背光裝置的第三實施例的剖面示意圖。本實施例與圖7所示實施例最大不同之處在於:本體21的第一寬側面211是面對光源座1設置,而各個反射結構22則是面對光源座1設置。Please refer to FIG. 8 , which is a schematic cross-sectional view of a third embodiment of the backlight device of the present invention. The biggest difference between this embodiment and the embodiment shown in FIG. 7 is that the first wide side surface 211 of the main body 21 is disposed facing the light source base 1 , and each reflection structure 22 is disposed facing the light source base 1 .

請一併參閱圖9及圖10,圖9顯示為本發明的背光裝置的第四實施例的剖面示意圖,圖10為圖9所示實施例的光源座的局部放大示意圖。本實施例與圖1所示的實施例其中一個不同之處在於:背光裝置100還包含一藍光穿透膜3、一色轉換膜4及一稜鏡片(Prism Sheet)5。均光構件2設置於藍光穿透膜3及光源座1之間,藍光穿透膜3設置於色轉換膜4與均光構件2之間,色轉換膜4設置於藍光穿透膜3與稜鏡片5之間。簡單來說,光源座1上依序設置有均光構件2、藍光穿透膜3、色轉換膜4及稜鏡片5,而光源座1所發出的波長介於420~480奈米的光束,依序通過均光構件2、藍光穿透膜3及色轉換膜4後,將轉換為白光。需說明的是,本實施例的光源座1的封裝體13內部是不摻有任何色轉換粒子。所述色轉換膜4例如是包含磷光體、半導體奈米晶體(Ⅱ-Ⅵ族或Ⅲ-Ⅴ族化合物)材料。Please refer to FIG. 9 and FIG. 10 together. FIG. 9 is a schematic cross-sectional view of a fourth embodiment of the backlight device of the present invention, and FIG. 10 is a partially enlarged schematic view of the light source seat of the embodiment shown in FIG. 9 . One difference between this embodiment and the embodiment shown in FIG. 1 is that the backlight device 100 further includes a blue light transmissive film 3 , a color conversion film 4 and a Prism Sheet 5 . The light homogenizing member 2 is arranged between the blue light penetrating film 3 and the light source base 1, the blue light penetrating film 3 is arranged between the color conversion film 4 and the light homogenizing member 2, and the color conversion film 4 is arranged between the blue light penetrating film 3 and the edge. between lenses 5. To put it simply, the light source base 1 is sequentially provided with a light homogenizing member 2, a blue light penetrating film 3, a color conversion film 4, and a crystal film 5, and the light source base 1 emits a light beam with a wavelength of 420-480 nm. After passing through the light homogenizing member 2 , the blue light penetrating film 3 and the color conversion film 4 in sequence, it will be converted into white light. It should be noted that, the interior of the package body 13 of the light source base 1 in this embodiment is not doped with any color conversion particles. The color conversion film 4 includes, for example, phosphor, semiconductor nanocrystal (II-VI group or III-V group compound) materials.

在實際應用中,藍光穿透膜3對波長介於420~480奈米的光束的穿透率大於90%以上,藍光穿透膜3對波長介於550~750奈米的光束的穿透率不大於2%。於本實施例的圖式中,並未繪示出用來使光源座1、均光構件2、藍光穿透膜3、色轉換膜4及稜鏡片5相互固定的結構,在實際應用中,可以依據需求進行設計,於此不加以限制。In practical applications, the transmittance of the blue light penetrating film 3 to the light beam with a wavelength of 420-480 nm is greater than 90%, and the transmittance of the blue light penetrating film 3 to the light beam with a wavelength of 550-750 nm not more than 2%. In the drawings of this embodiment, the structure for fixing the light source base 1 , the light homogenizing member 2 , the blue light penetrating film 3 , the color conversion film 4 and the iris sheet 5 to each other is not shown. In practical applications, It can be designed according to requirements, and is not limited here.

依上所述,本實施例的背光裝置100通過均光構件2、藍光穿透膜3及色轉換膜4等設計,可以使背光裝置100在整體厚度不大於5公釐(mm)的情況下,背光裝置100最亮的位置的亮度與最暗的位置的亮度兩者差可以是小於10%;相對地,習知具有相類似構件的背光裝置,在整體厚度不大於5公釐(mm)的情況下,該背光裝置100最亮的位置的亮度與最暗的位置的亮度兩者差將無法小於10%(一般是大於20%)。According to the above, in the backlight device 100 of the present embodiment, through the design of the light homogenizing member 2 , the blue light penetrating film 3 and the color conversion film 4 , etc., the backlight device 100 can have an overall thickness of not more than 5 millimeters (mm). , the difference between the brightness of the brightest position and the brightness of the darkest position of the backlight device 100 may be less than 10%; on the contrary, the conventional backlight device with similar components has an overall thickness of no more than 5 millimeters (mm) In this case, the difference between the brightness of the brightest position and the brightness of the darkest position of the backlight device 100 cannot be less than 10% (generally greater than 20%).

如圖10所示,本實施例與前述實施例的其中一個不同之處在於:各個發光二極體12相反於基板11的一頂面121,設置有一遮光構件122,遮光構件122對發光二極體12所發出的光束的反射率介於95%~98%。通過遮光構件122的設計,可以降低各個發光二極體12的正向光的光強度,從而可以進一步提升光源座1整體的均光效果。在較佳的實施例中,遮光構件122例如可以是分散式布拉格反射器(Distributed Bragg reflectors),且遮光構件122可以是形成於發光二極體12的藍寶石基板相反於發光二極體12的PN層的一側,而遮光構件122是由多層金屬、金屬氧化物(例如TiO 2、SiO 2)結構堆疊而成,藉此,相關人員將可以精準地控制遮光構件122所包含的每一層結構的折射率,而可以精確地控制發光二極體12所發出的光束通過遮光構件122的折射路徑。 As shown in FIG. 10 , one of the differences between this embodiment and the previous embodiment is that each light-emitting diode 12 is opposite to a top surface 121 of the substrate 11 and is provided with a light-shielding member 122 , and the light-shielding member 122 is opposite to the light-emitting diode. The reflectivity of the light beam emitted by the body 12 is between 95% and 98%. Through the design of the light shielding member 122 , the light intensity of the forward light of each light emitting diode 12 can be reduced, so that the overall light homogenization effect of the light source base 1 can be further improved. In a preferred embodiment, the light-shielding member 122 may be, for example, a distributed Bragg reflector, and the light-shielding member 122 may be formed on the sapphire substrate of the light-emitting diode 12 opposite to the PN of the light-emitting diode 12 The light-shielding member 122 is formed by stacking multiple layers of metal and metal oxide (eg TiO 2 , SiO 2 ) structures, so that the relevant personnel can precisely control the structure of each layer included in the light-shielding member 122 Refractive index, the refraction path of the light beam emitted by the light emitting diode 12 through the light shielding member 122 can be precisely controlled.

需說明的是,本實施例與前述實施例存在有三個差異特徵:本體21包含多個凸出結構213、各個發光二極體12具有遮光構件122,以及背光裝置100包含藍光穿透膜3、色轉換膜4及稜鏡片5;在不同的實施例中,相關技術人員可以是依據需求,選擇三個差異特徵中的至少一個結合於前述第一實施例中,而三個差異技術特徵,不侷限於必須同時存在。It should be noted that there are three differences between this embodiment and the previous embodiments: the main body 21 includes a plurality of protruding structures 213 , each light emitting diode 12 has a light shielding member 122 , and the backlight device 100 includes a blue light penetrating film 3 , The color conversion film 4 and the crystal film 5; in different embodiments, the relevant technical personnel can select at least one of the three different features to be combined in the aforementioned first embodiment according to the needs, and the three different technical features are not Confinement must exist simultaneously.

綜上所述,本發明的背光裝置通過使本體的外側面形成多個凹槽,並使多個反射結構的一部分填充於多個凹槽中,配合使本體的內側面形成多個凸出結構、使各個發光二極體具有遮光構件、使背光裝置的均光構件的一側依序設置有藍光穿透膜3、色轉換膜4及稜鏡片5等設計,可以讓背光裝置可以在整體厚度小於5公釐(mm)的情況下,仍可達到相對較佳的均光性(背光裝置100最亮的位置的亮度與最暗的位置的亮度兩者差可以是小於10%)。To sum up, in the backlight device of the present invention, a plurality of grooves are formed on the outer side of the main body, and a part of the plurality of reflective structures is filled in the plurality of grooves, and the inner side of the main body forms a plurality of protruding structures. , Make each light-emitting diode have a light-shielding member, and make one side of the light-homing member of the backlight device are sequentially provided with a blue light penetrating film 3, a color conversion film 4, and a fluorine film 5, etc., so that the backlight device can be used in the overall thickness of the design. In the case of less than 5 millimeters (mm), relatively good uniformity can still be achieved (the difference between the brightness of the brightest position and the brightness of the darkest position of the backlight device 100 can be less than 10%).

以上所述僅為本發明的較佳可行實施例,非因此侷限本發明的專利範圍,故舉凡運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的保護範圍內。The above descriptions are only preferred feasible embodiments of the present invention, which do not limit the scope of the present invention. Therefore, any equivalent technical changes made by using the contents of the description and drawings of the present invention are included in the protection scope of the present invention. .

100:背光裝置 1:光源座 11:基板 12:發光二極體 121:頂面 122:遮光構件 12W:寬度 12D:長度 12H:高度 12A:正投影區域 13:封裝體 2:均光構件 2H:厚度 21:本體 21H:厚度 211:第一寬側面 212:第二寬側面 213:凸出結構 213D:寬度 213H:高度 214:輔助凸出結構 214D:寬度 214H:高度 22:反射結構 22A:正投影區域 221:填充部 222:連接部 222D:寬度 222H:厚度 3:藍光穿透膜 4:色轉換膜 5:稜鏡片 P:間隔距離 G:空隙 CP:中心軸 100: Backlight device 1: Light source seat 11: Substrate 12: Light Emitting Diodes 121: top surface 122: Shading member 12W: width 12D: Length 12H: height 12A: Orthographic projection area 13: Package body 2: Homogenizing component 2H: Thickness 21: Ontology 21H: Thickness 211: First wide side 212: Second wide side 213: Protruding structure 213D:Width 213H: height 214: Auxiliary protruding structure 214D:Width 214H: height 22: Reflective Structure 22A: Orthographic projection area 221: Filler 222: Connector 222D:Width 222H: Thickness 3: blue light penetrating film 4: color conversion film 5: Pills P: separation distance G: Gap CP: Center axis

圖1為本發明的背光裝置的第一實施例的局部剖面示意圖。FIG. 1 is a partial cross-sectional schematic diagram of a first embodiment of a backlight device of the present invention.

圖2為本發明的背光裝置的第一實施例的光源座的局部放大示意圖。FIG. 2 is a partial enlarged schematic view of a light source seat of the first embodiment of the backlight device of the present invention.

圖3為本發明的背光裝置的第一實施例的本體形成有多個凸出結構的俯視示意圖。FIG. 3 is a schematic top view of the body of the backlight device according to the first embodiment of the present invention formed with a plurality of protruding structures.

圖4為本發明的背光裝置的第一實施例的本體形成有多個凸出結構的局部俯視示意圖。FIG. 4 is a partial top schematic view of the body of the backlight device according to the first embodiment of the present invention formed with a plurality of protruding structures.

圖5為本發明的背光裝置的其中一實施例的本體形成有多個凸出結構的俯視示意圖。FIG. 5 is a schematic top view of a body of a backlight device according to an embodiment of the present invention formed with a plurality of protruding structures.

圖6為本發明的背光裝置的其中一實施例的本體形成有多個凸出結構的俯視示意圖。FIG. 6 is a schematic top view of a body of a backlight device according to an embodiment of the present invention formed with a plurality of protruding structures.

圖7為本發明的背光裝置的第二實施例的局部剖面示意圖。FIG. 7 is a partial cross-sectional schematic diagram of a second embodiment of the backlight device of the present invention.

圖8為本發明的背光裝置的第三實施例的局部剖面示意圖。8 is a partial cross-sectional schematic diagram of a third embodiment of the backlight device of the present invention.

圖9為本發明的背光裝置的第四實施例的局部剖面示意圖。9 is a partial cross-sectional schematic diagram of a fourth embodiment of the backlight device of the present invention.

圖10為本發明的背光裝置的第四實施例的光源座的局部放大示意圖。FIG. 10 is a partial enlarged schematic view of a light source seat of a fourth embodiment of the backlight device of the present invention.

100:背光裝置 100: Backlight device

1:光源座 1: Light source seat

11:基板 11: Substrate

12:發光二極體 12: Light Emitting Diodes

12D:長度 12D: Length

13:封裝體 13: Package body

2:均光構件 2: Homogenizing component

2H:厚度 2H: Thickness

21:本體 21: Ontology

21H:厚度 21H: Thickness

211:第一寬側面 211: First wide side

212:第二寬側面 212: Second wide side

213:凸出結構 213: Protruding structure

213D:寬度 213D:Width

213H:高度 213H: height

22:反射結構 22: Reflective Structure

221:填充部 221: Filler

222:連接部 222: Connector

222D:寬度 222D:Width

222H:厚度 222H: Thickness

P:間隔距離 P: separation distance

G:空隙 G: Gap

CP:中心軸 CP: Center axis

Claims (10)

一種背光裝置,其包含:一光源座,其包含一基板及多個發光二極體,多個所述發光二極體彼此間隔地設置於所述基板;各個所述發光二極體的寬度小於0.4公釐(mm),各個所述發光二極體的長度小於0.4公釐(mm);一均光構件,其設置於所述光源座的上方,所述均光構件的厚度小於1公釐(mm),所述均光構件包含:一本體,所述本體的其中一寬側面形成有多個凸出結構,各個所述凸出結構緊密地排列形成於所述寬側面,而彼此相鄰的兩個所述凸出結構之間未有間隙;各個所述凸出結構為角錐結構或半球狀結構,且各個所述凸出結構的寬度為所述發光二極體的寬度或長度的1/10倍至1倍,且各個所述凸出結構的寬度不大於100微米(um);多個反射結構,各個所述反射結構包含多個填充部及一連接部,多個所述填充部與所述連接部相連接,各個所述反射結構的多個所述填充部對應填平一部分的多個所述凸出結構之間的空隙;各個所述反射結構能反射所述發光二極體所發出的光束;各個所述發光二極體朝向所述寬側面的方向正投影的正投影區域,對應位於其中一個所述反射結構朝向所述寬側面的方向正投影的正投影區域內;各個所述連接部的厚度不大於30微米;其中,所述光源座所發出的光束進入所述均光構件後,一部分的光束將直接穿過所述本體而朝向所述本體相反於所述光源座的方向射出,一部分的光束將被至少 一個所述填充部反射,一部分的光束將被至少一個所述連接部反射。 A backlight device, comprising: a light source base, which includes a substrate and a plurality of light-emitting diodes, the plurality of light-emitting diodes are arranged on the substrate at intervals; the width of each of the light-emitting diodes is less than 0.4 millimeters (mm), the length of each of the light-emitting diodes is less than 0.4 millimeters (mm); a homogenizing member, which is arranged above the light source base, and the thickness of the homogenizing member is less than 1 mm (mm), the light homogenizing member comprises: a main body, one of the wide side surfaces of the main body is formed with a plurality of protruding structures, and each of the protruding structures is closely arranged and formed on the wide side surface, and is adjacent to each other There is no gap between the two protruding structures of /10 times to 1 times, and the width of each of the protruding structures is not greater than 100 micrometers (um); a plurality of reflective structures, each of the reflective structures includes a plurality of filling parts and a connecting part, and a plurality of the filling parts Connected with the connecting part, the filling parts of each of the reflective structures correspondingly fill in the gaps between a plurality of the protruding structures; each of the reflective structures can reflect the light-emitting diodes the emitted light beam; the orthographic projection area of each of the light-emitting diodes in the direction of the orthographic projection toward the wide side face corresponds to the orthographic projection area of one of the reflection structures in the direction of the orthographic projection of the wide side face; each The thickness of the connecting portion is not more than 30 microns; wherein, after the light beam emitted by the light source seat enters the light homogenizing member, a part of the light beam will directly pass through the body and face the body opposite to the light source seat. , a part of the beam will be emitted by at least A portion of the light beam will be reflected by at least one of the connecting portions, reflecting one of the filling portions. 如請求項1所述的背光裝置,其中,各個所述連接部的厚度介於1微米(um)至30微米(um)之間;各個所述凸出結構相對於所述寬側面的高度介於10微米(um)至50微米(um)之間;各個所述凸出結構的寬度介於10微米(um)至100微米(um)之間。 The backlight device according to claim 1, wherein the thickness of each of the connecting parts is between 1 micrometer (um) and 30 micrometers (um); and the height of each of the protruding structures relative to the wide side is between between 10 micrometers (um) and 50 micrometers (um); the width of each of the protruding structures is between 10 micrometers (um) and 100 micrometers (um). 如請求項1所述的背光裝置,其中,相鄰的兩個所述發光二極體的中心軸彼此間的水平距離定義為一間隔距離,各個所述連接部的寬度不小於所述間隔距離的八分之一,且各個所述連接部的寬度不大於所述間隔距離的二分之一。 The backlight device according to claim 1, wherein the horizontal distance between the central axes of two adjacent light-emitting diodes is defined as a separation distance, and the width of each of the connecting portions is not less than the separation distance 1/8 of the distance, and the width of each of the connecting parts is not greater than 1/2 of the separation distance. 如請求項1所述的背光裝置,其中,各個所述凸出結構為角錐結構;各個所述凸出結構包含一底面及多個斜面,所述底面與任一個所述斜面的夾角介於45~75度。 The backlight device according to claim 1, wherein each of the protruding structures is a pyramid structure; each of the protruding structures includes a bottom surface and a plurality of inclined surfaces, and the included angle between the bottom surface and any one of the inclined surfaces is between 45° ~75 degrees. 如請求項1所述的背光裝置,其中,所述本體形成有多個所述凸出結構的所述寬側面定義為一第一寬側面,所述本體的另一個寬側面定義為一第二寬側面,所述本體於所述第二寬側面形成有多個輔助凸出結構,各個所述輔助凸出結構緊密地排列形成於所述第二寬側面,而彼此相鄰的兩個所述輔助凸出結構之間未有間隙;所述均光構件的厚度不大於1公釐(mm);各個所述輔助凸出結構為角錐結構或半球狀結構,且各個所述輔助凸出結構的寬度為所述發光二極體的寬度或長度的1/10倍至1倍,且各個所述輔助凸出結構的寬度不大於100微米(um)。 The backlight device of claim 1, wherein the broad side of the body formed with a plurality of the protruding structures is defined as a first broad side, and the other broad side of the body is defined as a second broad side wide side, the body is formed with a plurality of auxiliary protruding structures on the second wide side, each of the auxiliary protruding structures is closely arranged and formed on the second wide side, and the two adjacent to each other There is no gap between the auxiliary protruding structures; the thickness of the light homogenizing member is not more than 1 millimeter (mm); each of the auxiliary protruding structures is a pyramid structure or a hemispherical structure, and the thickness of each auxiliary protruding structure is The width is 1/10 times to 1 times the width or length of the light emitting diode, and the width of each of the auxiliary protruding structures is not greater than 100 micrometers (um). 如請求項5所述的背光裝置,其中,所述第一寬側面面對所述光源座。 The backlight device of claim 5, wherein the first wide side faces the light source base. 如請求項5所述的背光裝置,其中,所述第二寬側面面對所述光源座。 The backlight device of claim 5, wherein the second wide side faces the light source base. 如請求項1所述的背光裝置,其中,各個所述發光二極體能發出波長介於420~480奈米的光束;各個所述發光二極體的寬度介於0.1~0.4公釐(mm),各個所述發光二極體的長度介於0.1~0.4公釐(mm),各個所述發光二極體的高度介於0.05~0.2公釐(mm);相鄰的兩個所述發光二極體的中心軸彼此間的水平距離定義為一間隔距離,所述間隔距離介於2~6公釐(mm);所述光源座還包含一封裝體,所述封裝體設置於所述基板,且包覆所有的所述發光二極體,所述封裝體的折射率介於1.4~1.6,所述封裝體的厚度介於0.1~0.6公釐(mm)。 The backlight device of claim 1, wherein each of the light-emitting diodes can emit light beams with wavelengths ranging from 420 to 480 nanometers; and the width of each of the light-emitting diodes is from 0.1 to 0.4 millimeters (mm) , the length of each of the light-emitting diodes is between 0.1 and 0.4 millimeters (mm), and the height of each of the light-emitting diodes is between 0.05 and 0.2 millimeters (mm); two adjacent light-emitting diodes The horizontal distance between the central axes of the polar bodies is defined as a separation distance, and the separation distance is between 2 and 6 millimeters (mm); the light source base further includes a package body, and the package body is disposed on the substrate , and cover all the light emitting diodes, the refractive index of the package body is between 1.4 and 1.6, and the thickness of the package body is between 0.1 and 0.6 millimeters (mm). 如請求項8所述的背光裝置,其中,各個所述發光二極體相反於所述基板的一頂面,設置有一遮光構件,所述遮光構件對所述發光二極體所發出的光束的反射率不小於95%。 The backlight device according to claim 8, wherein each of the light-emitting diodes is opposite to a top surface of the substrate and is provided with a light-shielding member, and the light-shielding member has a negative effect on the light beams emitted by the light-emitting diodes. The reflectivity is not less than 95%. 如請求項8所述的背光裝置,其中,所述背光裝置還包含一藍光穿透膜、一色轉換膜及一稜鏡片,所述均光構件設置於所述藍光穿透膜及所述光源座之間,所述藍光穿透膜設置於所述色轉換膜與所述均光構件之間,所述色轉換膜設置於所述藍光穿透膜與所述稜鏡片之間;所述藍光穿透膜對波長介於420~480奈米的光束的穿透率大於90%以上,所述藍光穿透膜對波長介於550~750奈米的光束的穿透率不大於2%;所述光源座所發出的光束依序通過所述均光構件、所述藍光穿透膜及所述色轉換膜後,將轉換為白光。 The backlight device according to claim 8, wherein the backlight device further comprises a blue light penetrating film, a color conversion film, and a fluorine film, and the light homogenizing member is disposed on the blue light penetrating film and the light source base between, the blue light penetrating film is arranged between the color conversion film and the light homogenizing member, and the color conversion film is arranged between the blue light penetrating film and the crystal plate; the blue light penetrating film The transmittance of the transparent film to light beams with wavelengths ranging from 420 to 480 nanometers is greater than 90%, and the transmittance of the blue light penetrating film to light beams with wavelengths ranging from 550 to 750 nanometers is not greater than 2%; The light beam emitted by the light source seat will be converted into white light after passing through the light homogenizing member, the blue light penetrating film and the color conversion film in sequence.
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TWI487983B (en) * 2012-05-03 2015-06-11 Univ Nat Chiao Tung Optical film and backlight module using the same
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