TWI765291B - Method for detecting copper corrosion - Google Patents
Method for detecting copper corrosion Download PDFInfo
- Publication number
- TWI765291B TWI765291B TW109122487A TW109122487A TWI765291B TW I765291 B TWI765291 B TW I765291B TW 109122487 A TW109122487 A TW 109122487A TW 109122487 A TW109122487 A TW 109122487A TW I765291 B TWI765291 B TW I765291B
- Authority
- TW
- Taiwan
- Prior art keywords
- crack
- layer
- copper corrosion
- photoinitiator
- copper
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 120
- 239000010949 copper Substances 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 85
- 230000007797 corrosion Effects 0.000 title claims abstract description 84
- 238000005260 corrosion Methods 0.000 title claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 230000008569 process Effects 0.000 claims abstract description 55
- 239000011342 resin composition Substances 0.000 claims abstract description 45
- 238000001514 detection method Methods 0.000 claims abstract description 22
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- 239000011521 glass Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N17/00—Investigating resistance of materials to the weather, to corrosion, or to light
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Abstract
Description
本揭露係有關於一種銅腐蝕檢測用的多層基板以及銅腐蝕的檢測方法,且特別是有關於一種評價感光性樹脂組合物對銅腐蝕程度的檢測方法。 The present disclosure relates to a multilayer substrate for copper corrosion detection and a copper corrosion detection method, and in particular, to a detection method for evaluating the degree of copper corrosion by a photosensitive resin composition.
近年來,面板製程中的陣列(array)佈線,逐漸使用銅導線製程取代傳統的鋁導線製程,由於銅金屬的導電度佳,因此能夠降低佈線線寬,以滿足更複雜以及更高解析度的面板佈線設計,也能提升面板的光線穿透率。 In recent years, the array wiring in the panel manufacturing process has gradually replaced the traditional aluminum wiring process with the copper wire process. Due to the good conductivity of copper metal, the wiring line width can be reduced to meet the requirements of more complex and higher resolution. The panel wiring design can also improve the light penetration rate of the panel.
承前述,因應於面板製程中使用銅導線的需求,發展出能夠有效檢測銅導線腐蝕的方法以及改善檢測方法的可靠度仍為目前業界致力研究的課題之一。此外,開發不易造成銅導線斷線或腐蝕缺陷的感光性樹脂組成物的配方亦為業界致力研究的課題之一。 As mentioned above, in response to the requirement of using copper wires in the panel manufacturing process, developing a method for effectively detecting corrosion of copper wires and improving the reliability of the detection method are still one of the current research topics in the industry. In addition, developing the formulation of photosensitive resin composition that is less likely to cause copper wire disconnection or corrosion defects is also one of the research topics in the industry.
由於銅金屬與鋁金屬本質上的不同,造成製程相容性的問題,例如,原先用於鋁導線製程的材料在應用於銅導線製程 時可能產生預期外的化學反應,進而導致陣列基板上的銅導線腐蝕或斷線,衍伸出後續產品的可靠度問題。前述問題經常發生於採用陣列上彩色濾光片(color filter on array,COA)設計的面板產品。 Due to the difference between copper and aluminum in nature, process compatibility issues arise. Unexpected chemical reactions may occur during this time, which may lead to corrosion or disconnection of copper wires on the array substrate, which may lead to reliability problems of subsequent products. The aforementioned problems often occur in panel products using color filter on array (COA) designs.
根據本揭露一些實施例,提供一種銅腐蝕檢測用的多層基板,包含基底層以及銅層,且銅層設置於基底層上。 According to some embodiments of the present disclosure, a multilayer substrate for copper corrosion detection is provided, which includes a base layer and a copper layer, and the copper layer is disposed on the base layer.
根據本揭露一些實施例,提供一種銅腐蝕的檢測方法,包含以下步驟:提供多層基板,其中多層基板包含銅層;形成裂口於多層基板中,其中裂口的深度達到銅層;形成感光性樹脂組成物於多層基板上,感光性樹脂組成物覆蓋裂口並與銅層接觸;提供光罩層於多層基板上,實行曝光製程;移除光罩層以及實行顯影製程;對多層基板實行後烘烤製程;以及觀察裂口的銅腐蝕程度。 According to some embodiments of the present disclosure, a method for detecting copper corrosion is provided, including the following steps: providing a multilayer substrate, wherein the multilayer substrate includes a copper layer; forming a crack in the multilayer substrate, wherein the depth of the crack reaches the copper layer; forming a photosensitive resin composition On the multilayer substrate, the photosensitive resin composition covers the cracks and contacts the copper layer; provides a mask layer on the multilayer substrate, and performs the exposure process; ; and observe the degree of copper corrosion of the crack.
為了讓本揭露之特徵、或優點能更明顯易懂,下文特舉出一些實施例,並配合所附圖式,作詳細說明如下。 In order to make the features or advantages of the present disclosure more obvious and easy to understand, some embodiments are exemplified below, and are described in detail as follows in conjunction with the accompanying drawings.
以下針對本揭露實施例的銅腐蝕的檢測方法作詳細說明。應了解的是,以下之敘述提供許多不同的實施例或例子,用以實施本揭露一些實施例之不同態樣。以下所述特定的元件及排列方式僅為簡單清楚描述本揭露一些實施例。當然,這些僅用以舉例而非本揭露之限定。此外,在不同實施例中可能使用類似及/或對應的標號標示類似及/或對應的元件,以清楚描述本揭露。然而,這些類似及/或對應的標號的使用僅為了簡單清楚地敘述本揭露一些實施例,不代表所討論之不同實施例及/或結構之間具有任何關連性。 The method for detecting copper corrosion according to the embodiment of the present disclosure will be described in detail below. It should be appreciated that the following description provides many different embodiments or examples for implementing various aspects of some embodiments of the present disclosure. The specific elements and arrangements described below are merely to briefly and clearly describe some embodiments of the present disclosure. Of course, these are only examples and not limitations of the present disclosure. Furthermore, similar and/or corresponding reference numerals may be used in different embodiments to designate similar and/or corresponding elements in order to clearly describe the present disclosure. However, the use of these similar and/or corresponding reference numbers is merely for the purpose of simply and clearly describing some embodiments of the present disclosure, and does not imply any correlation between the different embodiments and/or structures discussed.
本揭露實施例可配合圖式一併理解,本揭露之圖式亦被視為揭露說明之一部分。應理解的是,本揭露之圖式並未按照 比例繪製,事實上,可能任意的放大或縮小元件的尺寸以便清楚表現出本揭露的特徵。 The embodiments of the present disclosure can be understood together with the drawings, and the drawings of the present disclosure are also regarded as a part of the disclosure description. It should be understood that the drawings in this disclosure are not in accordance with the Drawing to scale, elements may, in fact, be arbitrarily enlarged or reduced in size in order to clearly represent the features of the present disclosure.
此外,實施例中可能使用相對性用語,例如「較低」或「底部」或「較高」或「頂部」,以描述圖式的一個元件對於另一元件的相對關係。可理解的是,如果將圖式的裝置翻轉使其上下顛倒,則所敘述在「較低」側的元件將會成為在「較高」側的元件。再者,當述及一第一材料層位於一第二材料層上或之上時,包括第一材料層與第二材料層直接接觸之情形。或者,亦可能間隔有一或更多其它材料層之情形,在此情形中,第一材料層與第二材料層之間可能不直接接觸。 Furthermore, relative terms such as "lower" or "bottom" or "higher" or "top" may be used in the examples to describe the relative relationship of one element of the drawings to another element. It will be understood that if the device in the figures were turned upside down, elements described on the "lower" side would become elements on the "upper" side. Furthermore, when it is mentioned that a first material layer is located on or above a second material layer, the case where the first material layer and the second material layer are in direct contact is included. Alternatively, one or more other material layers may be spaced apart, in which case the first material layer and the second material layer may not be in direct contact.
於文中,「約」、「實質上」之用語通常表示在一給定值或範圍的10%內,或5%內、或3%之內、或2%之內、或1%之內、或0.5%之內。在此給定的數量為大約的數量,亦即在沒有特定說明「約」、「實質上」的情況下,仍可隱含「約」、「實質上」之含義。此外,用語「範圍介於第一數值至第二數值」表示所述範圍包含第一數值、第二數值以及它們之間的其它數值。 In the text, the terms "about" and "substantially" usually mean within 10%, or within 5%, or within 3%, or within 2%, or within 1%, of a given value or range. or within 0.5%. The quantity given here is an approximate quantity, that is, the meanings of "about" and "substantially" can still be implied if "about" and "substantially" are not specifically stated. Furthermore, the phrase "a range between a first value and a second value" means that the range includes the first value, the second value, and other values in between.
除非另外定義,在此使用的全部用語(包含技術及科學用語)具有與本揭露所屬技術領域的技術人員通常理解的相同涵義。能理解的是,這些用語例如在通常使用的字典中定義用語,應被解讀成具有與相關技術及本揭露的背景或上下文一致的意思,而不應以一理想化或過度正式的方式解讀,除非在本揭露實施例有特別定義。 Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having meanings consistent with the relevant art and the background or context of the present disclosure, and should not be interpreted in an idealized or overly formal manner, Unless otherwise defined in the embodiments of the present disclosure.
根據本揭露一些實施例,提供一種銅腐蝕的檢測方法,包含以圖形化多層基板評價感光性樹脂組合物對銅導線腐蝕程度的方法。詳細而言,所述方法包含使用特定的多層基板結構,搭配感光性樹脂組成物進行光微影(photolithography)製程,藉此可有效率且簡易地判斷銅導線是否發生腐蝕的現象,並且,所提供的銅腐蝕的檢測方法具有良好的可靠度。根據本揭露一些實施例,所提供之特定組成的感光性樹脂組成物與銅導線的反應性低,因此可有效降低銅導線腐蝕或斷線的風險。 According to some embodiments of the present disclosure, a method for detecting copper corrosion is provided, including a method for evaluating the degree of corrosion of copper wires by a photosensitive resin composition by using a patterned multilayer substrate. In detail, the method includes using a specific multi-layer substrate structure and performing a photolithography process with a photosensitive resin composition, so as to efficiently and simply determine whether the copper wire is corroded. The provided detection method for copper corrosion has good reliability. According to some embodiments of the present disclosure, the photosensitive resin composition of the specific composition provided has low reactivity with the copper wires, thus effectively reducing the risk of corrosion or disconnection of the copper wires.
請參照第1A圖至第1E圖,第1A圖至第1E圖顯示根據本揭露一些實施例中,於實行銅腐蝕的檢測方法的過程中,多層基板100的剖面結構示意圖。應理解的是,根據一些實施例,可於銅腐蝕的檢測方法進行前、進行中及/或進行後提供額外的操作步驟。根據一些實施例,所述的一些操作步驟可能被取代或省略。根據一些實施例,所述操作步驟的順序為可互換的。
Please refer to FIGS. 1A to 1E. FIGS. 1A to 1E are schematic cross-sectional views of the
首先,如第1A圖所示,提供多層基板100。根據一些實施例,多層基板100包含基底層102以及銅層104,銅層104可設置於基底層102上。根據一些實施例,多層基板100可進一步包含保護層106,保護層106可設置於銅層104上。
First, as shown in FIG. 1A, a
根據一些實施例,基底層102的材料可包含玻璃、石英、藍寶石、陶瓷、其它合適的基底材料、或前述之組合,但不限於此。根據一些實施例,玻璃基底的材料可包含包括矽(Si)、碳
化矽(SiC)、氮化鎵(GaN)、二氧化矽(SiO2)、其它合適的材料、或前述之組合,但不限於此。
According to some embodiments, the material of the
根據一些實施例,銅層104具有厚度T1,厚度T1的範圍可介於500nm至1000nm之間,或介於600nm至900nm之間,例如,700nm、或800nm。
According to some embodiments, the
根據一些實施例,可藉由化學氣相沉積製程、物理氣相沉積製程、電鍍製程、無電鍍製程、其它合適的製程、或前述之組合將銅層104形成於基底層102上。物理氣相沉積製程例如可包含濺鍍製程、蒸鍍製程、脈衝雷射沉積製程等。
According to some embodiments, the
再者,根據一些實施例,保護層106具有厚度T2,厚度T2的範圍可介於100nm至200nm之間,或介於100nm至150nm之間,例如,110nm、120nm、130nm、或140nm。
Furthermore, according to some embodiments, the
根據一些實施例,保護層106的材料可包含氮化矽(silicon nitride,SiN)、透明導電氧化物(transparent conductive oxide,TCO)、或前述之組合。舉例而言,透明導電氧化物可包含氧化銦錫(indium tin oxide,ITO)、氧化銻鋅(antimony zinc oxide,AZO)、氧化錫(tin oxide,SnO)、氧化鋅(zinc oxide,ZnO)、氧化銦鋅(indium zinc oxide,IZO)、氧化銦鎵鋅(indium gallium zinc oxide,IGZO)、氧化銦錫鋅(indium tin zinc oxide,ITZO)、氧化銻錫(antimony tin oxide,ATO)、其它合適的透明導電材料、或前述之組合。
According to some embodiments, the material of the
值得注意的是,根據一些實施例,保護層106大致上為透明的或可透光的,因此,可透過保護層106觀察到位於其下方的銅層104的腐蝕程度。
It is worth noting that, according to some embodiments, the
根據一些實施例,可藉由化學氣相沉積製程、塗佈製程、印刷製程、其它合適的製程、或前述之組合將保護層106形成於銅層104上。例如,化學氣相沉積製程可包含低壓化學氣相沉積製程(LPCVD)、低溫化學氣相沉積製程(LTCVD)、快速升溫化學氣相沉積製程(RTCVD)、電漿輔助化學氣相沉積製程(PECVD)或原子層沉積製程(ALD)等。
According to some embodiments, the
接著,如第1B圖所示,形成裂口GP於多層基板100中,且裂口GP的深度達到銅層104。詳細而言,根據一些實施例,裂口GP可完全貫穿保護層106以及銅層104,並且暴露出基底層102的頂表面102t。根據另一些實施例,裂口GP可完全貫穿保護層106但僅部分地形成於銅層104中,亦即,裂口GP未暴露出基底層102的頂表面102t。
Next, as shown in FIG. 1B , a gap GP is formed in the
根據一些實施例,裂口GP具有寬度W1,寬度W1的範圍可介於30μm至100μm之間、或40μm至90μm之間,例如,50μm、60μm、70μm、或80μm。值得注意的是,若裂口GP的寬度W1過小(例如,小於30μm),則可能會增加銅腐蝕現象的觀察難度。According to some embodiments, the gap GP has a width Wi, which may range from 30 μm to 100 μm, or 40 μm to 90 μm, eg, 50 μm, 60 μm, 70 μm, or 80 μm. It is worth noting that if the width W 1 of the gap GP is too small (for example, less than 30 μm), the observation difficulty of the copper corrosion phenomenon may be increased.
根據一些實施例,可藉由切割製程於多層基板100中形成裂口GP。舉例而言,切割製程可包含刀具切割製程、雷射切割切割製程、其它合適的切割製程、或前述之組合。According to some embodiments, the gap GP may be formed in the
接著,如第1C圖所示,形成感光性樹脂組成物108於多層基板100上,且感光性樹脂組成物108覆蓋裂口GP並與銅層104接觸。根據一些實施例,感光性樹脂組成物108覆蓋於保護層106上且延伸於裂口GP中,並且與裂口GP所暴露出的保護層106的側壁以及銅層104的側壁接觸。Next, as shown in FIG. 1C , a
根據一些實施例,感光性樹脂組成物108可包含著色劑(A)、樹脂(B)、光聚合單體(C)、光起始劑(D)、以及溶劑(E)。根據一些實施例,著色劑(A)可包含顏料(A-1)以及染料(A-2)。於本文中,所述著色劑(A)、顏料(A-1)、染料(A-2)、樹脂(B)、光聚合單體(C)、光起始劑(D)以及溶劑(E)等成分用詞,可獨立地包含單一種或多種著色劑(A)、顏料(A-1)、染料(A-2)、樹脂(B)、光聚合單體(C)、光起始劑(D)、以及溶劑(E)等成分的情況。According to some embodiments, the
根據一些實施例,著色劑(A)的顏料(A-1)可包含C.I.顏料紅9、97、105、122、123、144、149、166、168、175、176、177、180、192、209、215、216、224、242、254、255、264、265等的紅色顏料;C.I.顏料黃1、3、12、13、14、15、16、17、20、24、31、53、83、86、93、94、109、110、117、125、128、137、138、139、147、148、150、153、154、166、173、194、214等的黃色顏料; C.I.顏料橙13、31、36、38、40、42、43、51、55、59、61、64、65、71、73等的橙色顏料; C.I.顏料藍15、15:3、15:4、15:6、60、80等的藍色顏料;C.I.顏料紫1、19、23、29、32、36、38等的紫色顏料;C.I.顏料綠7、36、58等的綠色顏料;C.I.顏料棕23、25等的棕色顏料;C.I.顏料黑1、7等的黒色顏料等。根據一些實施例,紅色顏料(A-1)可為C.I.顏料紅254(R245)。或者,可使用其他公知的顏料作為顏料(A-1)。前述顏料可單獨使用,或可混合2種以上而使用。According to some embodiments, the pigment (A-1) of the colorant (A) may comprise C.I. 209, 215, 216, 224, 242, 254, 255, 264, 265, etc. red pigments; C.I.
根據一些實施例中,著色劑(A)的染料(A-2)可包含油溶性染料、酸性染料、鹼基性染料、直接染料、媒染染料、酸性染料的胺鹽或酸性染料的磺醯胺衍生物等的染料。或者,可使用其他公知的染料作為染料(A-2)。又,根據化學構造,可舉例如偶氮染料、花青素染料(cyanine dye)、三苯基甲烷染料(triphenylmethane dye)、氧雜蔥酮染料(xanthene dye)、酞菁染料(phthalocyanine dye)、萘醌染料(naphthoquinone dye)、醌亞胺染料(quinoneimine dye)、次甲基染料(methine dye)、偶氮甲堿染料(azomethine dye)、方酸染料(squarylium dye)、吖啶染料(acridine dye)、苯乙烯染料(styryl dye)、香豆素染料(coumarin dye)、喹啉染料(quinoline dye)及硝基染料(nitro dye)等。根據一些實施例,前述染料(A-2)以有機溶劑可溶性染料為佳。根據一些實施例,染料(A-2)可為氧雜蔥酮染料(xanthene dye)以及偶氮染料(azo dye)。再者,前述染料可單獨使用,或可混合2種以上而使用。According to some embodiments, the dye (A-2) of the colorant (A) may comprise oil-soluble dyes, acid dyes, basic dyes, direct dyes, mordant dyes, amine salts of acid dyes, or sulfonamides of acid dyes Derivatives, etc. Alternatively, other known dyes may be used as the dye (A-2). Moreover, depending on the chemical structure, for example, azo dyes, cyanine dyes, triphenylmethane dyes, xanthene dyes, phthalocyanine dyes, Naphthoquinone dye, quinoneimine dye, methine dye, azomethine dye, squarylium dye, acridine dye ), styrene dye (styryl dye), coumarin dye (coumarin dye), quinoline dye (quinoline dye) and nitro dye (nitro dye) and the like. According to some embodiments, the aforementioned dye (A-2) is preferably an organic solvent-soluble dye. According to some embodiments, the dye (A-2) may be a xanthene dye and an azo dye. In addition, the aforementioned dyes may be used alone, or two or more of them may be mixed and used.
根據一些實施例,樹脂(B)可為鹼可溶性樹脂。舉例而言,鹼可溶性樹脂可包含含有羧酸基不飽和單體、含有羧酸基不飽和單體與含有乙烯基不飽和單體的共聚物、或前述之組合。舉例而言,根據一些實施例,前述羧酸基不飽和單體可擇自於丙烯酸(acrylic acid,AA)類化合物、甲基丙烯酸類化合物、或前述之組合。根據一些實施例,前述乙烯基不飽和單體可擇自於丙烯酸甲酯(methyl acrylate)、甲基丙烯酸甲酯(methyl methacrylate)、苯基丙烯酸酯(benzyl acrylate)、苯基甲基丙烯酸酯(benzyl methacrylate)、丙烯酸乙酯(ethyl acrylate)、甲基丙烯酸乙酯(ethyl methacrylate)、2-羥基乙基丙烯酸酯(2-hydroxyethyl acrylate)、2-羥基乙基甲基丙烯酸酯(2-hydroxyethyl methacrylate)、羥基丙基丙烯酸酯(hydroxylpropyl acrylate)、羥基丙基甲基丙烯酸酯(hydroxylpropyl methacrylate)、異丁基丙烯酸酯(isobutyl methacrylate)、異丁基甲基丙烯酸酯(isobutyl methacrylate)、乙二醇二甲基丙烯酸酯(ethylene glycol dimethacrylate)、1,4-丁二醇二丙烯酸酯(1,4 butanediol diacrylate)、二乙二醇二丙烯酸酯(diethylene glycol diacrylate)、季戊四醇三丙烯酸酯(pentaerythritol triacrylate)、乙氧基化季戊四醇四丙烯酸酯(ethoxylated pentaerythritol tetraacrylate)、乙氧基化三甲基丙烷三丙烯酸酯(ethoxylated trimethylpropane triacrylate)、二季戊四醇五丙烯酸酯(dipentaerythritol pentaacrylate)、季戊四醇四丙烯酸酯(pentaerythritol tetraacrylate)、二季戊四醇六丙烯酸酯(dipentaerythritol hexaacrylate)、二環戊烯甲基丙烯酸酯(dihydrodicyclopentadienyl acrylate,DCPA)、環氧二環戊烯甲基丙烯酸酯(epoxy dicyclopentenyl acrylate,EDCPA)、甲基丙烯酸(methacrylic acid)、N-苯基馬來醯亞胺(N-benzyl maleimide)、三環癸基丙烯酸甲酯(tricyclodecyl methacrylate)、乙烯甲苯(vinyl toluene)、N-乙基順丁烯二醯亞胺(N-cyclohexylmaleimide)、丙烯酸2-乙基己酯(2-ethylhexyl acrylate)、甲基丙烯酸縮水甘油酯(glycidyl methacrylate)、甲基丙烯酸環己酯(cyclohexyl methacrylate)、甲基丙烯酸叔丁酯(tert-butyl methacrylate),或前述之組合。根據一些實施例,樹脂(B)可為以單體EDCPA與單體AA組合之樹酯。根據一些實施例,樹脂(B)可為SH5052A。According to some embodiments, resin (B) may be an alkali-soluble resin. For example, the alkali-soluble resin may comprise a carboxylic acid group-containing unsaturated monomer, a copolymer of a carboxylic acid group-containing unsaturated monomer and a vinyl unsaturated monomer, or a combination thereof. For example, according to some embodiments, the aforementioned carboxylic acid-based unsaturated monomers may be selected from acrylic acid (AA) compounds, methacrylic compounds, or a combination thereof. According to some embodiments, the aforementioned ethylenically unsaturated monomer may be selected from methyl acrylate, methyl methacrylate, benzyl acrylate, phenyl methacrylate ( benzyl methacrylate), ethyl acrylate (ethyl acrylate), ethyl methacrylate (ethyl methacrylate), 2-hydroxyethyl acrylate (2-hydroxyethyl acrylate), 2-hydroxyethyl methacrylate (2-hydroxyethyl methacrylate) ), hydroxypropyl acrylate, hydroxypropyl methacrylate, isobutyl methacrylate, isobutyl methacrylate, ethylene glycol dimethyl acrylate ethylene glycol dimethacrylate, 1,4-butanediol diacrylate, diethylene glycol diacrylate, pentaerythritol triacrylate, ethoxylate ethoxylated pentaerythritol tetraacrylate, ethoxylated trimethylpropane triacrylate, dipentaerythritol pentaacrylate, pentaerythritol tetraacrylate, dipentaerythritol Dipentaerythritol hexaacrylate (dipentaerythritol hexaacrylate), dihydrodicyclopentadienyl acrylate (DCPA), epoxy dicyclopentenyl acrylate (EDCPA), methacrylic acid (methacrylic acid), N - Phenyl maleimide (N-benzyl maleimide), tricyclodecyl methacrylate (tricyclodecyl methacrylate), vinyltoluene (vi nyl toluene), N-cyclohexylmaleimide (N-cyclohexylmaleimide), 2-ethylhexyl acrylate (2-ethylhexyl acrylate), glycidyl methacrylate (glycidyl methacrylate), methacrylic acid ring cyclohexyl methacrylate, tert-butyl methacrylate, or a combination of the foregoing. According to some embodiments, resin (B) may be a resin in combination with monomer EDCPA and monomer AA. According to some embodiments, resin (B) may be SH5052A.
再者,光聚合單體(C)可為可藉由光起始劑(D)產生的活性自由基及/或酸而聚合的單體。例如,根據一些實施例,光聚合單體(C)可包含但不限於具有可聚合性的乙烯性不飽和鍵,像是(甲基)丙烯酸酯化合物。於此,使用括號來敘述的化合物,代表包括括號內文字存在與不存在的情況,例如前述的(甲基)丙烯酸酯化合物,包含丙烯酸酯化合物、及甲基丙烯酸酯化合物的情形。舉例而言,光聚合單體(C)可包含但不限於選自於由下列選項所組成的群組中的至少一者:丙烯酸壬基苯基卡必醇酯、丙烯酸2-羥基-3-苯氧基丙酯、丙烯酸2-乙基己基卡必醇酯、丙烯酸2-羥基乙酯、N-乙烯基吡咯酮等具有一個乙烯性不飽和鍵的聚合性化合物;二(甲基)丙烯酸1,6-己烷二醇酯、二(甲基)丙烯酸乙二醇酯、二(甲基)丙烯酸新戊二醇酯、二(甲基)丙烯酸三乙二醇酯、雙酚A的雙(丙烯醯氧基乙基)醚、二(甲基)丙烯酸3-甲基戊烷二醇酯等具有二個乙烯性不飽和鍵的聚合性化合物;以及三(甲基)丙烯酸三羥甲基丙烷酯、三(甲基)丙烯酸季戊四醇酯、四(甲基)丙烯酸季戊四醇酯、五(甲基)丙烯酸二季戊四醇酯、六(甲基)丙烯酸二季戊四醇酯、八(甲基)丙烯酸三季戊四醇酯、三季戊四醇七(甲基)丙烯酸酯、十(甲基)丙烯酸四季戊四醇酯、九(甲基)丙烯酸四季戊四醇酯、三(2-(甲基)丙烯醯氧基乙基)異氰酸酯、四(甲基)丙烯酸乙二醇改性季戊四醇酯、六(甲基)丙烯酸乙二醇改性二季戊四醇酯、四(甲基)丙烯酸丙二醇改性季戊四醇酯、六(甲基)丙烯酸丙二醇改性二季戊四醇酯、四(甲基)丙烯酸己內酯改性季戊四醇酯、六(甲基)丙烯酸己內酯改性二季戊四醇酯等具有三個乙烯性不飽和鍵的聚合性化合物。根據一些實施例,光聚合單體(C)可為雙季戊四醇六丙烯酸酯(dipentaerythritol hexaacrylate,DPHA)。Furthermore, the photopolymerizable monomer (C) may be a monomer that can be polymerized by active radicals and/or acids generated by the photoinitiator (D). For example, according to some embodiments, the photopolymerizable monomer (C) may include, but is not limited to, an ethylenically unsaturated bond having polymerizability, such as a (meth)acrylate compound. Here, the compound described with parentheses represents the presence or absence of the characters in the parentheses, such as the aforementioned (meth)acrylate compound, the case where the acrylate compound and the methacrylate compound are included. For example, the photopolymerizable monomer (C) may include, but is not limited to, at least one selected from the group consisting of: nonylphenyl carbitol acrylate, 2-hydroxy-3- acrylate Phenoxypropyl ester, 2-ethylhexyl carbitol acrylate, 2-hydroxyethyl acrylate, N-vinylpyrrolidone and other polymerizable compounds with one ethylenically unsaturated bond; di(meth)acrylic acid 1 ,6-hexanediol, ethylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, bis(meth)acrylate Polymerizable compounds having two ethylenically unsaturated bonds, such as acryloxyethyl) ether and 3-methylpentanediol di(meth)acrylate; and trimethylolpropane tri(meth)acrylate ester, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tripentaerythritol octa(meth)acrylate, Tripentaerythritol hepta(meth)acrylate, pentaerythritol ten(meth)acrylate, pentaerythritol nona(meth)acrylate, tris(2-(meth)acrylooxyethyl)isocyanate, tetrakis(meth)acrylate base) ethylene glycol modified pentaerythritol acrylate, ethylene glycol hexa(meth)acrylate modified dipentaerythritol, propylene glycol tetra(meth)acrylate modified pentaerythritol, propylene glycol hexa(meth)acrylate modified dipentaerythritol , tetra (meth) acrylic acid caprolactone modified pentaerythritol, hexa (meth) acrylic acid caprolactone modified dipentaerythritol and other polymerizable compounds with three ethylenically unsaturated bonds. According to some embodiments, the photopolymerizable monomer (C) may be dipentaerythritol hexaacrylate (DPHA).
再者,光起始劑(D)可為能夠藉由光或熱的作用而產生活性自由基、酸等,進而使得聚合開始的化合物。舉例而言,根據一些實施例,光起始劑(D)可包含O-醯基肟(O-acyloxime)化合物、烷基苯基酮化合物、雙咪唑化合物、三嗪化合物、醯基膦氧化物(acyl phosphine oxide)、安息香化合物、二苯基酮化合物、醌系化合物、10-丁基-2-氯吖啶酮、苄基、苯基甲醯甲酸甲酯、環戊二烯鈦(titanocene)化合物、或前述之組合。根據一些實施例,光起始劑(D)可為2,4,6-三甲基苯甲醯基二苯基氧化膦(I-819)、PBG-345(Tronly)、PBG-365(Tronly)、PBG-380(Tronly)、或PBG-327(Tronly)。Furthermore, the photoinitiator (D) may be a compound capable of generating active radicals, acids, etc. by the action of light or heat, thereby starting polymerization. For example, according to some embodiments, the photoinitiator (D) may include an O-acyloxime compound, an alkyl phenyl ketone compound, a bisimidazole compound, a triazine compound, an acylphosphine oxide (acyl phosphine oxide), benzoin compound, benzophenone compound, quinone compound, 10-butyl-2-chloroacridone, benzyl, methyl phenylformate, titanium cyclopentadiene (titanocene) compound, or a combination of the foregoing. According to some embodiments, the photoinitiator (D) may be 2,4,6-trimethylbenzyldiphenylphosphine oxide (I-819), PBG-345 (Tronly), PBG-365 (Tronly) ), PBG-380 (Tronly), or PBG-327 (Tronly).
特別地,根據本揭露一些實施例,藉由實行銅腐蝕的檢測方法,進一步發現具有特定光起始劑組成的感光性樹脂組成物108與銅導線的反應性低,因此可有效降低銅導線腐蝕或斷線的風險。In particular, according to some embodiments of the present disclosure, by implementing the copper corrosion detection method, it is further found that the
具體而言,根據一些實施例,感光性樹脂組成物108包含的光起始劑不為肟系光起始劑(亦即,不含有肟結構),且光起始劑的固形份不大於8wt%(≤8wt%),所觀察到的裂口GP的銅腐蝕程度判定為符合標準,亦即,沒有銅腐蝕現象或是銅腐蝕程度相當輕微。根據另一些實施例,感光性樹脂組成物108包含的光起始劑為肟系光起始劑(亦即,含有肟結構)且不包含硝基(-NO2
)或硫基(-S)結構,且光起始劑的固形份不大於5wt%(≤5wt%),所觀察到的裂口GP的銅腐蝕程度判定為符合標準,亦即,沒有銅腐蝕現象或是銅腐蝕程度相當輕微。根據另一些實施例,感光性樹脂組成物108包含的光起始劑為肟系光起始劑且包含硝基(-NO2
)或硫基(-S)結構,且光起始劑的固形份不大於2.5wt%(≤2.5wt%),所觀察到的裂口GP的銅腐蝕程度判定為符合標準,亦即,沒有銅腐蝕現象或是銅腐蝕程度相當輕微。關於本揭露實施例的詳細實施方式將於下文進行說明。Specifically, according to some embodiments, the photoinitiator included in the
根據一些實施例,溶劑(E)可包含但不限於酯溶劑(在此意指於分子中含有-COO-但不含-O-的溶劑)、醚溶劑(在此意指於分子中含有-O-但不含-COO-的溶劑)、醚酯溶劑(在此意指於分子中含有-COO-及-O-的溶劑)、酮溶劑(在此意指於分子中含有-CO-但不含-COO-的溶劑)、醇溶劑(在此意指於分子中含有OH但不含-O-、-CO-及-COO-的溶劑)、芳香族烴溶劑、醯胺溶劑、二甲基亞碸等。根據一些實施例,溶劑(E)可為二丙酮醇(DAA)、丙二醇甲醚(PGME)、或丙二醇甲醚醋酸酯(PGMEA)。According to some embodiments, the solvent (E) may include, but is not limited to, ester solvents (herein meaning solvents containing -COO- in the molecule but not -O-), ether solvents (herein meaning in the molecules containing - O-but not -COO-solvent), ether ester solvent (here means a solvent containing -COO- and -O- in the molecule), ketone solvent (here means containing -CO- in the molecule but Solvents not containing -COO-), alcohol solvents (here means solvents containing OH in the molecule but not -O-, -CO- and -COO-), aromatic hydrocarbon solvents, amide solvents, dimethyl Chia and others. According to some embodiments, solvent (E) may be diacetone alcohol (DAA), propylene glycol methyl ether (PGME), or propylene glycol methyl ether acetate (PGMEA).
根據一些實施例,相對於100重量份的樹脂(B),著色劑(A)為200重量份至270重量份、或220重量份至250重量份,光聚合單體(C)為210重量份至260重量份、或230重量份至240重量份,光起始劑(D)為5重量份至80重量份、或10重量份至60重量份,溶劑(E)為3200重量份至4000重量份、或3400重量份至3900重量份。According to some embodiments, the colorant (A) is 200 to 270 parts by weight, or 220 to 250 parts by weight, and the photopolymerizable monomer (C) is 210 parts by weight relative to 100 parts by weight of the resin (B). to 260 parts by weight, or 230 to 240 parts by weight, the photoinitiator (D) is 5 to 80 parts by weight, or 10 to 60 parts by weight, and the solvent (E) is 3200 to 4000 parts by weight parts, or 3400 to 3900 parts by weight.
根據一些實施例,感光性樹脂組成物108可進一步包含分散劑、黏結劑、或其它添加劑,例如流平劑、聚合起始助劑、填充劑、密著促進劑、抗氧化劑、光安定劑、鏈移動劑等其他添加劑,但不限於此。根據一些實施例,添加劑可包含含氟親油性機寡聚物,例如F554(DIC)。According to some embodiments, the
根據一些實施例,可藉由化學氣相沉積製程、塗佈製程、印刷製程、其它合適的製程、或前述之組合將感光性樹脂組成物108形成於保護層106上。根據一些實施例,感光性樹脂組成物108可藉由旋轉塗佈機、狹縫旋轉塗佈機、狹縫塗佈機(也稱為壓鑄模塗佈機(die coater)、簾淋塗佈機(curtain flow coater)、或非旋轉式塗佈機(spinless coater))、或噴墨機等塗佈裝置進行塗佈製程。According to some embodiments, the
根據一些實施例,於形成感光性樹脂組成物108於多層基板100上的步驟之後,可進一步對感光性樹脂組成物108實行乾燥製程。具體而言,乾燥製程可包含真空乾燥、自然乾燥、通風乾燥、減壓乾燥、加熱乾燥(也稱為預烘烤)、或前述之組合。根據一些實施例,可先進行真空乾燥後接著進行加熱乾燥。根據一些實施例,真空乾燥的壓力範圍可介於40pa~90pa之間,或介於50pa~80pa之間。根據一些實施例,加熱乾燥的溫度範圍可介於30℃~120℃之間,或介於40℃~100℃之間,加熱的時間可介於10秒~60分鐘之間,或介於30秒~30分鐘之間。According to some embodiments, after the step of forming the
之後,如第1D圖所示,提供光罩層110於多層基板100上,進行曝光製程。根據一些實施例,光罩層110包含透光區110a以及非透光區110b,非透光區110b設置於裂口GP上方,且非透光區110b的寬度W2
大於裂口GP的寬度W1
,亦即,非透光區110可完整地覆蓋於裂口GP上。根據一些實施例,於基底層102的法線方向上,非透光區110b與裂口GP重疊,並且與鄰近於裂口GP的一部分的銅層104及保護層106重疊。Afterwards, as shown in FIG. 1D , a
根據一些實施例,裂口GP的邊緣與非透光區110b的邊緣之間存在距離D1
,距離D1
的範圍可介於100 μm至500 μm之間,或介於200μm至400μm之間,例如,250μm、300μm、或350μm。詳細而言,前述距離D1指的是於平行於基底層102的頂表面的方向上,裂口GP的邊緣與非透光區110b的邊緣之間的最小距離。
According to some embodiments, there is a distance D 1 between the edge of the gap GP and the edge of the
值得注意的是,造成銅層104腐蝕的原因之一可能是感光性樹脂組成物108於曝光時所使用的溶劑與銅反應所造成,因此,若距離D1過小或過大(例如,小於100μm或大於500μm),均可能會增加觀察銅腐蝕的難度。
It is worth noting that one of the reasons for the corrosion of the
根據一些實施例,光罩層110的非透光區110b的寬度W2可介於130μm至600μm之間,或介於200μm至500μm之間,例如,300μm、或400μm。再者,光罩層110的透光區110a具有寬度W3,寬度W3可大於500μm。
According to some embodiments, the width W 2 of the
應理解的是,圖式中的實施例是以採用負型光阻的感光性樹脂組成物108為例子,但根據另一些實施例,可採用正型光阻的感光性樹脂組成物108,如此一來,光罩層110的透光區110a以及非透光區110b的位置將與圖式中的位置相反,亦即,透光區110a可設置於裂口GP上方,且透光區110a的寬度W3大於裂口GP的寬度W1。
It should be understood that the embodiments in the drawings are taken as an example using the
請參照第1E圖,接著,可移除光罩層110以及實行顯影製程。詳細而言,根據一些實施例,在使用光罩層110進行曝光後,可藉由顯影製程移除未曝光的部分而得到圖案化的感光性樹脂組成物108。如第1D圖及第1E圖所示,光線(如圖式中的箭頭所標示)可穿透光罩層110的透光區110a但無法穿透非透光區110b,對應於非透光區110b的感光性樹脂組成物108的部分108X會在接續的顯影製程中被移除,而對應於透光區110a的感光性樹脂組成物108的部分108’在接續的顯影製程中則不會被移除。Referring to FIG. 1E, then, the
根據一些實施例,於曝光的步驟中,可使用水銀燈、發光二極體、金屬鹵素燈、鹵素燈等光源,並且可使用波長範圍介於250奈米至450奈米的光。根據一些實施例,可使用光罩對準曝光機、步進器等裝置,以均勻地對整個曝光面照射平行光線,及/或精確地對準遮罩和基材。According to some embodiments, in the exposure step, light sources such as mercury lamps, light emitting diodes, metal halide lamps, and halogen lamps can be used, and light with a wavelength range of 250 nm to 450 nm can be used. According to some embodiments, a mask alignment exposure machine, stepper, etc. device may be used to uniformly illuminate the entire exposure surface with parallel light, and/or to precisely align the mask and substrate.
再者,於顯影的步驟中,可使用有機溶劑、鹼性化合物的水溶液等顯影劑,使得預定的部分(例如未曝光的部分)溶解以進行移除,藉此得到圖形。Furthermore, in the developing step, a developer such as an organic solvent or an aqueous solution of an alkaline compound can be used to dissolve a predetermined portion (eg, an unexposed portion) for removal, thereby obtaining a pattern.
值得注意的是,根據一些實施例,使用鹼性化合物的水溶液作為顯影劑特別有助於得到形狀良好的圖形。根據一些實施例,顯影劑的濃度範圍例如可介於0.001質量%至0.100質量%之間,例如,介於0.040質量%至0.050質量%之間。根據一些實施例,顯影製程中使用的顯影劑可包含氫氧化鉀(KOH)水溶液。Notably, according to some embodiments, the use of an aqueous solution of an alkaline compound as a developer is particularly helpful in obtaining well-shaped graphics. According to some embodiments, the concentration range of the developer may be, for example, between 0.001 mass % and 0.100 mass %, eg, between 0.040 mass % and 0.050 mass %. According to some embodiments, the developer used in the developing process may include an aqueous potassium hydroxide (KOH) solution.
根據一些實施例,顯影劑可藉由槳式攪拌法、浸漬法、噴霧法等方法提供於多層基板100上。根據一些實施例,於顯影製程之後可對多層基板100實行清洗步驟。According to some embodiments, the developer may be provided on the
此外,根據一些實施例,於顯影製程之後,可對多層基板100實行後烘烤製程。根據一些實施例,乾燥製程可包含加熱乾燥。根據一些實施例,加熱的溫度範圍可介於150℃~300℃之間,或介於200℃~250℃之間,例如,210℃、220℃、230℃、或240℃。根據一些實施例,加熱的時間可介於5分鐘~60分鐘之間,或介於10分鐘~50分鐘之間,例如,20分鐘、30分鐘、或40分鐘Furthermore, according to some embodiments, after the development process, a post-bake process may be performed on the
值得注意的是,後烘烤製程將使得鄰近裂口GP的銅層104以及保護層106膨脹、突起,可更有利於後續觀察裂口GP的銅腐蝕程度。It is worth noting that the post-baking process will cause the
接著,於後烘烤製程之後,觀察裂口GP的銅腐蝕程度。請參照第2A圖以及第2B圖,第2A圖顯示根據本揭露一些實施例中,於實行前述銅腐蝕的檢測方法之後,多層基板100(以及形成於其上的感光性樹脂組成物108的部分108’)的剖面結構示意圖,第2B圖顯示對應於第2A圖中的多層基板100的上視結構示意圖。應理解的是,為了清楚說明,第2B圖中並未繪示出位於銅層104的色彩不均區域104r上的保護層106。Next, after the post-baking process, the copper corrosion degree of the crack GP was observed. Please refer to FIG. 2A and FIG. 2B. FIG. 2A shows the multilayer substrate 100 (and the
如第2A圖以及第2B圖所示,根據一些實施例,於實行銅腐蝕的檢測方法的前述步驟(如第1A圖至第1E圖所示)之後,多層基板100中的裂口GP周圍產生色彩不均區域104r。根據一些實施例,色彩不均區域104r大致上呈現淡紅色、淡橘色、淡黃色、白色的漸層暈染狀,且由裂口GP處向外分別為淡紅色、淡橘色、淡黃色、白色(例如,請參照第4圖,其顯示以光學顯微鏡所取得的實際影像)。根據一些實施例,可使用光學顯微鏡觀察裂口GP的銅腐蝕程度。As shown in FIGS. 2A and 2B , according to some embodiments, after performing the foregoing steps of the copper corrosion detection method (as shown in FIGS. 1A to 1E ), color is generated around the gap GP in the
根據一些實施例,判斷銅腐蝕程度的具體作法包含量測裂口GP周圍的色彩不均區域104r的寬度W4
,若色彩不均區域104r的寬度W4
扣除裂口GP的寬度W1
大於或等於30 μm(W4
-W1
≥30 μm),則判定為不符合標準,亦即,銅腐蝕程度嚴重;若色彩不均區域104r的寬度W4
扣除裂口GP的寬度W1
小於30 μm(W4
-W1
<30 μm),則判定為符合標準,亦即,沒有銅腐蝕現象或是銅腐蝕程度相當輕微。According to some embodiments, the specific method for determining the degree of copper corrosion includes measuring the width W 4 of the
應注意的是,色彩不均區域104r的寬度W4
指的是在與裂口GP的延伸方向垂直的方向上,色彩不均區域104r的最大寬度,且此數值可為三次量測(不同位置)後所取得的平均值。此外,應理解的是,根據不同的實施例,可根據產品的要求,調整判斷銅腐蝕程度是否符合規定的臨界值。It should be noted that the width W4 of the uneven color area 104r refers to the maximum width of the
再者,請參照第3A圖以及第3B圖,第3A圖顯示根據本揭露另一些實施例中,於實行前述銅腐蝕的檢測方法之後,多層基板100(以及形成於其上的感光性樹脂組成物108的部分108’)的剖面結構示意圖,第3B圖顯示對應於第3A圖中的多層基板100的上視結構示意圖。Furthermore, please refer to FIG. 3A and FIG. 3B. FIG. 3A shows the composition of the multilayer substrate 100 (and the photosensitive resin formed thereon) after the copper corrosion detection method described above is performed according to other embodiments of the present disclosure. Fig. 3B shows a schematic top view structure corresponding to the
如第3A圖以及第3B圖所示,根據一些實施例,於實行銅腐蝕的檢測方法的前述步驟(如第1A圖至第1E圖所示)之後,多層基板100中的裂口GP周圍並未產生色彩不均區域104r,亦即,於此實施例中,沒有發生銅腐蝕的現象(例如,請參照第5圖,其顯示以光學顯微鏡所取得的實際影像)。As shown in FIGS. 3A and 3B , according to some embodiments, after performing the aforementioned steps of the copper corrosion detection method (as shown in FIGS. 1A to 1E ), there is no gap around the gap GP in the
承前述,根據本揭露一些實施例,提供的銅腐蝕檢測方法,包含以圖形化多層基板評價感光性樹脂組合物對銅導線腐蝕程度的方法,其包含使用特定的多層基板結構,搭配感光性樹脂組成物進行光微影製程,藉此可有效率且簡易地判斷銅導線是否發生腐蝕的現象,並且,所提供的銅腐蝕的檢測方法具有良好的可靠度。此外,根據本揭露一些實施例,所提供之特定組成的感光性樹脂組成物與銅導線的反應性低,因此可有效降低銅導線腐蝕或斷線的風險。Based on the foregoing, according to some embodiments of the present disclosure, a method for detecting copper corrosion is provided, including a method for evaluating the corrosion degree of a photosensitive resin composition on copper wires by using a patterned multilayer substrate, which includes using a specific multilayer substrate structure with a photosensitive resin. The composition is subjected to a photolithography process, whereby whether the copper wire is corroded can be judged efficiently and simply, and the provided method for detecting copper corrosion has good reliability. In addition, according to some embodiments of the present disclosure, the photosensitive resin composition with a specific composition has low reactivity with the copper wires, so the risk of corrosion or disconnection of the copper wires can be effectively reduced.
為了讓本揭露之上述及其它目的、特徵、及優點能更明顯易懂,下文特舉數實施例、比較例以及測試例,作詳細說明如下,然其並非用以限定本揭露之內容。實施例 1~9/ 比較例 1~6 In order to make the above-mentioned and other objects, features, and advantages of the present disclosure more clearly understood, several embodiments, comparative examples, and test examples are given below for detailed description, but they are not intended to limit the content of the present disclosure. Examples 1~9/ Comparative Examples 1~6
首先,先製備圖形化的多層基板,步驟如下:於素玻璃的表面上鍍上厚度500 nm~1000 nm的金屬銅,接著於金屬銅鍍層上鍍上厚度100 nm~150 nm之氮化矽層,接著,使用刀片將氮化矽層與金屬銅層一起劃開形成直線裂口,裂口的寬度介於20 μm至50 μm之間。First, a patterned multi-layer substrate is prepared. The steps are as follows: metal copper with a thickness of 500 nm to 1000 nm is plated on the surface of the plain glass, and then a silicon nitride layer with a thickness of 100 nm to 150 nm is plated on the metal copper plating layer. Then, the silicon nitride layer and the metal copper layer are scribed together with a blade to form a straight crack, and the width of the crack is between 20 μm and 50 μm.
之後,依照下述表1以及表2所示內容製備實施例1~9以及比較例1~6的感光性樹脂組合物。詳細而言,將如表1以及表2所示之不同材料配比的感光性樹脂組合物混合均勻,接著使用旋轉塗佈的方式將感光性樹脂組合物塗佈於5cm*5cm之前述圖形化的多層基板上,完成濕膜試片。Then, the photosensitive resin compositions of Examples 1 to 9 and Comparative Examples 1 to 6 were prepared according to the contents shown in Table 1 and Table 2 below. In detail, the photosensitive resin compositions with different material ratios shown in Table 1 and Table 2 are mixed uniformly, and then the photosensitive resin composition is coated on the aforementioned pattern of 5cm*5cm by means of spin coating. On the multi-layer substrate, the wet film test piece is completed.
接著,將濕膜試片放入真空乾燥機中,蓋上密封蓋後抽真空,設定抽氣底壓為66 pa並且維持20秒,待完成後破真空恢復大氣壓力,將濕膜試片從真空乾燥機取出,並放置於溫度90℃的加熱板上進行加熱38秒,接著於室溫中冷卻,完成預乾燥的步驟。Next, put the wet film test piece into the vacuum dryer, cover it with a sealing cover, and then vacuumize, set the bottom pressure of the suction to 66 Pa and maintain it for 20 seconds. After completion, break the vacuum and restore the atmospheric pressure. The vacuum dryer was taken out and placed on a heating plate with a temperature of 90° C. for 38 seconds, and then cooled at room temperature to complete the pre-drying step.
將前述完成的濕膜試片放入曝光機中進行曝光,設定積光量為40 mJ/cm2 ,且光罩與濕膜試片之間的距離設定為265 μm,設定完成後進行曝光。選擇的光罩的透光區以及非透光區的寬度分別為1000 μm以及1000 μm,且非透光區覆蓋於裂口之上。Put the completed wet film test piece into the exposure machine for exposure, set the accumulated light amount to 40 mJ/cm 2 , and set the distance between the mask and the wet film test piece to be 265 μm, and perform exposure after the setting is completed. The widths of the light-transmitting area and the non-light-transmitting area of the selected photomask are respectively 1000 μm and 1000 μm, and the non-light-transmitting area covers the crack.
將曝光完成後的濕膜試片放入顯影機,使用濃度0.044%的KOH水溶液作為顯影劑,顯影時間設定為60秒,顯影壓力設定為0.06MPa,顯影劑噴嘴高度距離濕膜試片17公分。完成顯影之後,使用去離子水進行清洗步驟,清洗時間及壓力分別設定為40秒以及0.1Mpa,清洗用噴嘴高度距離濕膜試片17公分。前述顯影劑與清洗用去離子水均使用加熱冷卻裝置維持在23±1℃的溫度區間。Put the wet film test piece after exposure into the developing machine, use KOH aqueous solution with a concentration of 0.044% as the developer, the development time is set to 60 seconds, the development pressure is set to 0.06MPa, and the height of the developer nozzle is 17 cm away from the wet film test piece. . After completion of development, deionized water was used to perform the cleaning step. The cleaning time and pressure were set to 40 seconds and 0.1 Mpa, respectively, and the height of the cleaning nozzle was 17 cm from the wet film test piece. Both the developer and the deionized water for cleaning were maintained at a temperature range of 23±1° C. using a heating and cooling device.
將濕膜試片放入溫度230℃的烘箱中進行後烘烤步驟,烘烤20分鐘後取出冷卻,完成試片(具有感光性樹脂組成物於其上的多層基板)的製作。The wet film test piece was put into an oven with a temperature of 230°C for post-baking step, and after baking for 20 minutes, it was taken out and cooled to complete the production of the test piece (multilayer substrate with the photosensitive resin composition thereon).
接著,使用光學顯微鏡(廠商、型號:_OLYMPUS DSX500_)觀測裂口處是否有銅腐蝕現象,判斷銅腐蝕程度的具體作法如前所述,結果如表1以及表2所示。Next, use an optical microscope (manufacturer, model: _OLYMPUS DSX500_) to observe whether there is copper corrosion at the crack, and the specific method for judging the degree of copper corrosion is as described above.
表1
表2
表1以及表2中各成分的百分比皆以固形分(%)表示,其中顔料R254為前述著色劑(A)的顏料(A-1)、SH5052A為前述的樹脂(B)、DPHA為前述的光聚合單體(C)、I-819、PBG-345、PBG-365、PBG-380、PBG-327為前述的光起始劑(D)、以及DAA、PGME、PGMEA為前述的溶劑(E)。The percentage of each component in Table 1 and Table 2 is expressed in solid content (%), wherein pigment R254 is the pigment (A-1) of the aforementioned colorant (A), SH5052A is the aforementioned resin (B), and DPHA is the aforementioned Photopolymerizable monomers (C), I-819, PBG-345, PBG-365, PBG-380, PBG-327 are the aforementioned photoinitiators (D), and DAA, PGME, PGMEA are the aforementioned solvents (E ).
根據表1以及表2的結果可知,當感光性樹脂組成物包含的光起始劑為非肟系光起始劑,且光起始劑的固形份不大於8wt%時(實施例1~3),所觀察到的裂口GP的銅腐蝕程度為0 μm,符合標準。當感光性樹脂組成物包含的光起始劑為肟系光起始劑且不包含硝基(-NO2 )或硫基(-S)結構,且光起始劑的固形份不大於5wt%時(實施例4~7),所觀察到的裂口GP的銅腐蝕程度介於12.6 μm~25.5 μm之間,符合標準。再者,當感光性樹脂組成物包含的光起始劑為肟系光起始劑且包含硝基(-NO2 )或硫基(-S)結構,且光起始劑的固形份不大於2.5wt%時(實施例8~9),所觀察到的裂口GP的銅腐蝕程度介於17.8 μm~27.2 μm之間,符合標準。According to the results in Table 1 and Table 2, when the photoinitiator contained in the photosensitive resin composition is a non-oxime-based photoinitiator, and the solid content of the photoinitiator is not more than 8 wt % (Examples 1 to 3 ), the copper corrosion degree of the observed crack GP is 0 μm, which meets the standard. When the photoinitiator contained in the photosensitive resin composition is an oxime-based photoinitiator and does not contain a nitro group (-NO 2 ) or a sulfur group (-S) structure, and the solid content of the photoinitiator is not more than 5wt% (Examples 4 to 7), the copper corrosion degree of the observed crack GP is between 12.6 μm and 25.5 μm, which meets the standard. Furthermore, when the photoinitiator contained in the photosensitive resin composition is an oxime-based photoinitiator and contains a nitro group (-NO 2 ) or a sulfur group (-S) structure, and the solid content of the photoinitiator is not greater than At 2.5 wt% (Examples 8-9), the observed copper corrosion degree of the crack GP is between 17.8 μm and 27.2 μm, which meets the standard.
雖然本揭露的實施例及其優點已揭露如上,但應該瞭解的是,任何所屬技術領域中具有通常知識者,在不脫離本揭露之精神和範圍內,當可作更動、替代與潤飾。本揭露實施例之間的特徵只要不違背發明精神或相衝突,均可任意混合搭配使用。此外,本揭露之保護範圍並未侷限於說明書內所述特定實施例中的製程、機器、製造、物質組成、裝置、方法及步驟,任何所屬技術領域中具有通常知識者可從本揭露揭示內容中理解現行或未來所發展出的製程、機器、製造、物質組成、裝置、方法及步驟,只要可以在此處所述實施例中實施大抵相同功能或獲得大抵相同結果皆可根據本揭露使用。因此,本揭露之保護範圍包括上述製程、機器、製造、物質組成、裝置、方法及步驟。本揭露之保護範圍當視後附之申請專利範圍所界定者為準。Although the embodiments of the present disclosure and their advantages have been disclosed above, it should be understood that those skilled in the art can make changes, substitutions and modifications without departing from the spirit and scope of the present disclosure. The features between the embodiments of the present disclosure can be arbitrarily mixed and matched as long as they do not violate the spirit of the invention or conflict with each other. In addition, the protection scope of the present disclosure is not limited to the process, machine, manufacture, material composition, device, method and steps in the specific embodiments described in the specification. It is understood that processes, machines, manufactures, compositions of matter, devices, methods and steps developed in the present or in the future can be used in accordance with the present disclosure as long as they can perform substantially the same functions or obtain substantially the same results in the embodiments described herein. Therefore, the protection scope of the present disclosure includes the above-mentioned processes, machines, manufactures, compositions of matter, devices, methods and steps. The scope of protection of this disclosure shall be determined by the scope of the appended patent application.
100:多層基板
102:基底層
102t:頂表面
104:銅層
104r:色彩不均區域
106:保護層
108:感光性樹脂組成物
108’:部分
108X:部分
110:光罩層
110a:透光區
110b:非透光區
D1
:距離
GP:裂口
T1
:厚度
T2
:厚度
W1
:寬度
W2
:寬度
W3
:寬度
W4
:寬度100: multilayer substrate 102:
第1A圖至第1E圖顯示根據本揭露一些實施例中,於實行銅腐蝕的檢測方法的過程中,多層基板的剖面結構示意圖;第2A圖顯示根據本揭露一些實施例中,於實行銅腐蝕的檢測方法的過程中,多層基板的剖面結構示意圖;第2B圖顯示根據本揭露一些實施例中,於實行銅腐蝕的檢測方法的過程中,多層基板的上視結構示意圖; 第3A圖顯示根據本揭露一些實施例中,於實行銅腐蝕的檢測方法的過程中,多層基板的剖面結構示意圖;第3B圖顯示根據本揭露一些實施例中,於實行銅腐蝕的檢測方法的過程中,多層基板的上視結構示意圖;第4圖顯示根據本揭露一些實施例中,於實行銅腐蝕的檢測方法的過程中,以光學顯微鏡所取得的多層基板的影像;第5圖顯示根據本揭露一些實施例中,於實行銅腐蝕的檢測方法的過程中,以光學顯微鏡所取得的多層基板的影像。 1A to 1E show schematic cross-sectional structures of the multilayer substrate in the process of implementing the copper corrosion detection method according to some embodiments of the present disclosure; and FIG. 2A shows the copper corrosion in some embodiments according to the present disclosure. Schematic diagram of the cross-sectional structure of the multi-layer substrate in the process of the detection method; FIG. 2B shows a schematic diagram of the top-view structure of the multi-layer substrate in the process of implementing the detection method for copper corrosion according to some embodiments of the present disclosure; FIG. 3A shows a schematic diagram of a cross-sectional structure of a multi-layer substrate in the process of implementing the copper corrosion detection method according to some embodiments of the present disclosure; FIG. 3B shows the copper corrosion detection method according to some embodiments of the present disclosure. During the process, a schematic top view of the multilayer substrate; FIG. 4 shows an image of the multilayer substrate obtained by an optical microscope in the process of implementing the copper corrosion detection method according to some embodiments of the present disclosure; FIG. In some embodiments of the present disclosure, in the process of implementing the copper corrosion detection method, the image of the multilayer substrate is obtained by an optical microscope.
100:多層基板 100: Multilayer substrate
102:基底層 102: basal layer
104:銅層 104: Copper layer
106:保護層 106: Protective layer
108:感光性樹脂組成物 108: Photosensitive resin composition
110:光罩層 110: mask layer
110a:透光區 110a: light transmission area
110b:非透光區 110b: non-transparent area
D1:距離 D 1 : Distance
GP:裂口 GP: rip
W1:寬度 W 1 : width
W2:寬度 W 2 : width
W3:寬度 W 3 : width
Claims (13)
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|---|---|---|---|---|
| TWI492910B (en) * | 2012-04-11 | 2015-07-21 | Juant Technology Co Ltd | Colored glass and its manufacturing process |
| TW201934614A (en) * | 2018-01-29 | 2019-09-01 | 日商富士軟片股份有限公司 | Photosensitive resin composition, resin, cured film, laminated body, method for manufacturing cured film, and semiconductor device |
| TW202024232A (en) * | 2018-09-27 | 2020-07-01 | 日商富士軟片股份有限公司 | Method for manufacturing resin composition, cured film, laminate, cured film and semiconductor element |
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| CN102628788B (en) * | 2011-06-09 | 2014-05-07 | 京东方科技集团股份有限公司 | Detection structure of barrier property of corrosion barrier layer and detection method |
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| TWI492910B (en) * | 2012-04-11 | 2015-07-21 | Juant Technology Co Ltd | Colored glass and its manufacturing process |
| TW201934614A (en) * | 2018-01-29 | 2019-09-01 | 日商富士軟片股份有限公司 | Photosensitive resin composition, resin, cured film, laminated body, method for manufacturing cured film, and semiconductor device |
| TW202024232A (en) * | 2018-09-27 | 2020-07-01 | 日商富士軟片股份有限公司 | Method for manufacturing resin composition, cured film, laminate, cured film and semiconductor element |
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