TWI762552B - Substrate protective film, member for preventing adhesion, and method for forming member for preventing adhesion - Google Patents
Substrate protective film, member for preventing adhesion, and method for forming member for preventing adhesion Download PDFInfo
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- TWI762552B TWI762552B TW107100136A TW107100136A TWI762552B TW I762552 B TWI762552 B TW I762552B TW 107100136 A TW107100136 A TW 107100136A TW 107100136 A TW107100136 A TW 107100136A TW I762552 B TWI762552 B TW I762552B
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- layer
- protective film
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- 239000000758 substrate Substances 0.000 title claims abstract description 89
- 230000001681 protective effect Effects 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims description 20
- 239000000126 substance Substances 0.000 claims abstract description 43
- 125000000524 functional group Chemical group 0.000 claims abstract description 33
- 239000010410 layer Substances 0.000 claims description 100
- 239000002585 base Substances 0.000 claims description 63
- 239000010408 film Substances 0.000 claims description 39
- 239000005871 repellent Substances 0.000 claims description 24
- 239000013545 self-assembled monolayer Substances 0.000 claims description 23
- -1 amine phenyl Chemical group 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 5
- 150000002430 hydrocarbons Chemical class 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 claims description 2
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000002947 alkylene group Chemical group 0.000 claims description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 2
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 claims description 2
- 125000000068 chlorophenyl group Chemical group 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 claims description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims description 2
- 125000002433 cyclopentenyl group Chemical group C1(=CCCC1)* 0.000 claims description 2
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 claims description 2
- 238000001962 electrophoresis Methods 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 125000004175 fluorobenzyl group Chemical group 0.000 claims description 2
- 125000001207 fluorophenyl group Chemical group 0.000 claims description 2
- 125000006379 fluoropyridyl group Chemical group 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 125000004464 hydroxyphenyl group Chemical group 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 239000003607 modifier Substances 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 claims description 2
- 125000001624 naphthyl group Chemical group 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 125000004076 pyridyl group Chemical group 0.000 claims description 2
- 125000000168 pyrrolyl group Chemical group 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 238000003980 solgel method Methods 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 125000001544 thienyl group Chemical group 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 2
- 229920002554 vinyl polymer Polymers 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims 2
- CWLKTJOTWITYSI-UHFFFAOYSA-N 1-fluoronaphthalene Chemical compound C1=CC=C2C(F)=CC=CC2=C1 CWLKTJOTWITYSI-UHFFFAOYSA-N 0.000 claims 1
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 125000003784 fluoroethyl group Chemical group [H]C([H])(F)C([H])([H])* 0.000 claims 1
- 125000001165 hydrophobic group Chemical group 0.000 claims 1
- 125000001725 pyrenyl group Chemical group 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 10
- 230000000052 comparative effect Effects 0.000 description 25
- 239000002094 self assembled monolayer Substances 0.000 description 21
- 238000011156 evaluation Methods 0.000 description 16
- 238000002834 transmittance Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000003373 anti-fouling effect Effects 0.000 description 4
- 239000005329 float glass Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- NZZFYRREKKOMAT-UHFFFAOYSA-N diiodomethane Chemical compound ICI NZZFYRREKKOMAT-UHFFFAOYSA-N 0.000 description 2
- 229940038597 peroxide anti-acne preparations for topical use Drugs 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical group C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- 229960003328 benzoyl peroxide Drugs 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 125000005581 pyrene group Chemical group 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- TUQLLQQWSNWKCF-UHFFFAOYSA-N trimethoxymethylsilane Chemical compound COC([SiH3])(OC)OC TUQLLQQWSNWKCF-UHFFFAOYSA-N 0.000 description 1
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/16—Antifouling paints; Underwater paints
- C09D5/1606—Antifouling paints; Underwater paints characterised by the anti-fouling agent
- C09D5/1612—Non-macromolecular compounds
- C09D5/1618—Non-macromolecular compounds inorganic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B17/00—Methods preventing fouling
- B08B17/02—Preventing deposition of fouling or of dust
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/38—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal at least one coating being a coating of an organic material
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/42—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating of an organic material and at least one non-metal coating
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- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
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- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/16—Antifouling paints; Underwater paints
- C09D5/1606—Antifouling paints; Underwater paints characterised by the anti-fouling agent
- C09D5/1612—Non-macromolecular compounds
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- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
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Abstract
本發明課題在於提供一種可高於由靜電斥力所產生的物質附著減少效果地減少物質向基體表面的附著之基體保護膜。 解決手段為將包含帶電物質且具有靜電斥力的第1層(電荷保持層(3))形成於基體(1)表面上,並在此第1層的表面上形成控制表面自由能的第2層(由官能基長度未達1nm且為50mJ/m2 以下之低表面自由能的官能基所構成的官能基層(4))。透過如此形成基體保護膜(2),由於可保持基體(1)表面上的靜電斥力,同時減少由分子間力所引起的物質附著,而能夠高於僅由靜電斥力所產生的物質附著減少效果地減少物質向基體(1)表面的附著。An object of the present invention is to provide a substrate protective film that can reduce the adhesion of substances to the surface of the substrate more than the effect of reducing the adhesion of substances by electrostatic repulsion. The solution is to form a first layer (charge holding layer (3)) containing a charged substance and having electrostatic repulsion on the surface of the substrate (1), and forming a second layer that controls surface free energy on the surface of the first layer (Functional base layer (4) composed of functional groups having a functional group length of less than 1 nm and a low surface free energy of 50 mJ/m 2 or less). By forming the substrate protective film (2) in this way, since the electrostatic repulsion on the surface of the substrate (1) can be maintained, the adhesion of substances caused by intermolecular forces can be reduced, and the effect of reducing the adhesion of substances by only the electrostatic repulsion can be reduced. to reduce the adhesion of substances to the surface of the substrate (1).
Description
[0001] 本發明係有關於一種可減少物質向基體(例如玻璃製或樹脂製基體)的表面的附著之基體保護膜、及、此種基體保護膜形成於表面而成的防止附著之構件、與其形成方法。The present invention relates to a substrate protective film that can reduce the adhesion of substances to the surface of a substrate (such as a glass or resin substrate), and a member that prevents adhesion by forming this substrate protective film on the surface, its formation method.
[0002] 作為減少物質(污染物質等)向基體的表面的附著之技術,既有提案專利文獻1、2所記載之技術。於專利文獻1、2所記載之技術中,係藉由將電荷保持於基體的表面,而藉由靜電斥力來減少物質的附著。 [先前技術文獻] [專利文獻] [0003] [專利文獻1]日本專利第4926176號 [專利文獻2]日本專利第5624458號[0002] As a technique for reducing the adhesion of substances (contaminants, etc.) to the surface of a substrate, there are techniques described in Proposed
[發明所欲解決之課題] [0004] 如上述專利文獻1、2所記載之技術,可藉由將電荷保持於基體的表面,而藉由靜電斥力來減少物質的附著力,但要求高於此種由靜電斥力所產生的物質附著減少效果地減少物質向基體表面的附著力。 [0005] 本發明係考量如此現況而完成者,茲以提供一種可高於由靜電斥力所產生的物質附著減少效果地減少物質向基體表面的附著之基體保護膜、及、提供一種此種基體保護膜形成於表面而成的防止附著之構件、與其形成方法為目的。 [解決課題之手段] [0006] 本發明之基體保護膜係可減少物質向基體的表面的附著之基體保護膜,其特徵為:由包含帶電物質且具有靜電斥力的第1層、與控制表面自由能的第2層所構成,前述第1層係形成於前述基體表面上,於此第1層的表面上形成有前述第2層。而且,前述第2層係由50mJ/m2
以下之低表面自由能的官能基所形成,該第2層的厚度為未達1nm。 [0007] 根據本發明之基體保護膜,可藉由形成於基體表面上之第1層的靜電斥力減少物質附著。再者,由於在此第1層的表面上形成控制表面自由能的第2層,且將此第2層由50mJ/m2
以下之低表面自由能的官能基形成,並將該第2層的厚度調成未達1nm,因此可藉此第2層降低表面自由能而減少分子間力所引起的物質附著。藉此,由於可保持基體表面上之第1層所產生的靜電斥力,同時減少分子間力所引起的物質附著,而能夠高於僅由靜電斥力所產生的物質附著減少效果地減少物質向基體表面的附著。 [0008] 本發明之防止附著之構件,其特徵為在玻璃製或樹脂製基體表面形成具有上述特徵之基體保護膜而成。根據此種防止附著之構件,可有效減少物質(污染物質等)向表面的附著。 [發明之效果] [0009] 根據本發明之基體保護膜及防止附著之構件,可高於僅由靜電斥力所產生的物質附著減少效果地減少物質向基體表面的附著。[Problems to be Solved by the Invention] [0004] As described in the above-mentioned
[實施發明之形態] [0011] 以下,基於圖式說明本發明之實施形態。 [0012] [實施形態1] 圖1為表示本發明之基體保護膜的一例的示意圖。 [0013] 此例之基體保護膜2係由具有靜電斥力的電荷保持層(第1層)3、與控制表面自由能的官能基層(第2層)4所構成,在玻璃製或樹脂製基體(基板)1的表面上形成有電荷保持層3,於此電荷保持層3的表面上形成有官能基層4。 [0014] 電荷保持層3係包含帶電物質地形成。官能基層4係由甲基(50mJ/m2
以下之低表面自由能的官能基)所形成的自組裝單分子膜(SAM),其厚度為未達1nm。 [0015] 根據此例之基體保護膜2,可藉由形成於基體1的表面上之電荷保持層3的靜電斥力減少物質附著。再者,由於在此電荷保持層3的表面上形成有由官能基長度(厚度)未達1nm且為50mJ/m2
以下之低表面自由能的官能基(甲基)所構成的官能基層4,因此可減少分子間力所引起的物質附著。藉此,由於可保持基體1的表面上的靜電斥力,同時減少分子間力所引起的物質附著,而能夠高於僅由靜電斥力所產生的物質附著減少效果地減少物質向基體1的表面的附著。 [0016] 而且,如圖1所示,在玻璃製或樹脂製基體1的表面上形成有由電荷保持層3與官能基層4所構成的基體保護膜2者,係本發明之「防止附著之構件」的一例(防止附著之構件10)。 [0017] 此外,官能基層4不限於自組裝單分子膜(SAM),也可為以其他形成方法(後述之撥水基或撥水・撥油基之形成方法)所形成的層(甲基層)。 [0018] [實施形態2] 圖2為表示本發明之基體保護膜的另一例的示意圖。 [0019] 此例之基體保護膜12有以下特徵:在具有靜電斥力的電荷保持層(第1層)13的表面上形成有由己基(50mJ/m2
以下之低表面自由能的官能基)所構成的官能基層(SAM:第2層)14;除此之外的構成係與上述之[實施形態1]的構成相同。 [0020] 於此例之基體保護膜12中,亦可保持基體11的表面上的靜電斥力,同時減少分子間力所引起的物質附著,而能夠高於僅由靜電斥力所產生的物質附著減少效果地減少物質向基體11的表面的附著。 [0021] 而且,如圖2所示,在玻璃製或樹脂製基體(基板)11的表面上形成有由電荷保持層13與官能基層14所構成的基體保護膜12者,係本發明之「防止附著之構件」的另一例(防止附著之構件20)。 [0022] 此外,官能基層14不限於自組裝單分子膜(SAM),也可為以其他形成方法(後述之撥水基或撥水・撥油基之形成方法)所形成的層(己基層)。 [0023] 在以上實施形態中,係在電荷保持層(3,13)的表面上形成由甲基或己基所構成的官能基層(4,14),惟本發明不限定於此,只要是官能基長未達1nm且為50mJ/m2
以下之低表面自由能的官能基,則亦可將由其他官能基(茲參照後述之烴系官能基及氟化物系官能基)所構成的官能基層形成於電荷保持層的表面上。 [0024] [電荷保持層] 其次,就電荷保持層(3,13)加以說明。 [0025] 作為使電荷保持層所含之帶電物質,可使用任意的導電體與介電體或半導體之組合,而基於基體表面的自潔淨化觀點,較佳使用摻金屬氧化鈦、摻金屬氧化矽。作為前述金屬,較佳為選自由金、銀、鉑、銅、鋯、錫、錳、鎳、鈷、鐵、鋅、鹼金屬、鹼土類金屬所成群組之金屬元素的至少1種,更佳為至少2種,尤以銀或錫、以及銅或鐵為佳。作為氧化鈦,可使用TiO2
、TiO3
、TiO、TiO3
/nH2
O等各種的氧化物或過氧化物;作為氧化矽,可使用SiO2
、SiO3
、SiO、SiO3
/nH2
O等各種的氧化物或過氧化物。 [0026] 電荷保持層的膜厚不特別限定,較佳為10nm~1μm的範圍,更佳為10nm~100nm的範圍。 [0027] [官能基層] 其次,就低表面自由能之官能基層(4,14)加以說明。 [0028] 首先,所稱降低表面自由能,係與將其表面撥水化或撥水、撥油化之意義相等。而且,為使表面呈撥水化或撥油化,則需於其表面形成撥水基或撥水/撥油基。於本實施形態中,係藉由在電荷保持層的表面上形成撥水基或撥水/撥油基,來減少表面自由能。 [0029] 作為此撥水基,可舉出烴系官能基。 [0030] 作為烴系官能基,可舉出烷基、伸烷基、苯基、苯甲基、苯乙基、羥苯基、氯苯基、胺苯基、萘基、蒽基、芘基、噻吩基、吡咯基、環己基、環己烯基、環戊基、環戊烯基、吡啶基、氯甲基、甲氧乙基、羥乙基、胺乙基、氰基、巰丙基、乙烯基、丙烯醯氧乙基、甲基丙烯醯氧乙基、環氧丙氧丙基、或乙醯氧基等。 [0031] 又,作為撥水/撥油基,可舉出氟化物系官能基。 [0032] 作為氟化物系官能基,可舉出氟烷基、氟伸烷基、氟苯基、氟苯甲基、氟苯乙基、氟萘基、氟蒽基、氟芘基、氟噻吩基、氟吡咯基、氟環己基、氟環己烯基、氟環戊基、氟環戊烯基、氟吡啶基、氟甲氧乙基、胺基氟乙基、氟乙烯基、或氟乙醯氧基。 [0033] 作為將以上之撥水基或撥水/撥油基(烴系官能基或氟化物系官能基)形成於電荷保持層的表面上之方法,可舉出自組裝單分子膜(SAM)之化學吸附、採電漿CVD之蒸鍍、採溶膠凝膠法之形成、奈米粒子之塗佈、使用表面改質劑之方法、採交互層合法之薄膜形成、複合電鍍、電泳法、或蝕刻處理等。 [實施例] [0034] 茲與比較例共同說明本發明之實施例。 [0035] [實施例1] ・電荷保持層形成用之溶液 首先,作為電荷保持層形成用之溶液,係使用 Sustainable Titania Technology股份有限公司製品。具體而言,係將摻銅銳鈦礦型過氧化鈦、摻錫銳鈦礦型過氧化鈦、摻鋯銳鈦礦型過氧化鈦、及摻鉀聚矽酸鹽以下述表1所示混合比(重量比)混合者作為電荷保持層形成用之溶液使用。 [0036][0037] ・電荷保持層形成 藉由刮刀法,在100mm×100mm之玻璃基板(浮法玻璃)的表面上,將上述電荷保持層形成用之溶液塗佈成形成後的厚度為100nm,於200℃使其硬化15分鐘,而於玻璃基板(基體)的表面上形成電荷保持層。 [0038] ・自組裝單分子膜形成(官能基層形成) 將形成有上述電荷保持層的玻璃基板、與自組裝單分子膜形成用之溶液:三甲氧基甲基矽烷0.5ml收容於密閉容器內,並將此密閉容器配置於真空加熱爐內。然後,在爐內壓力0.1kPa以下的減壓環境下於170℃加熱2小時,使甲基吸附於電荷保持層的表面上,而形成自組裝單分子膜(SAM)(參照圖1)。 [0039] 將此[實施例1]中所製作者,亦即在玻璃基板的表面上形成電荷保持層,並使甲基吸附於此電荷保持層的表面上而形成自組裝單分子膜(官能基層)者作為評定基板1。 [0040] [實施例2] 根據與[實施例1]相同的處理,在100mm×100mm之玻璃基板(浮法玻璃)的表面上形成電荷保持層。 [0041] 將形成有此電荷保持層的玻璃基板、與自組裝單分子膜形成用之溶液:己基三甲氧基矽烷0.5ml收容於密閉容器內,並將此密閉容器配置於真空加熱爐內。然後,在爐內壓力0.1kPa以下的減壓環境下於170℃加熱2小時,使己基吸附於電荷保持層的表面上,而形成自組裝單分子膜(SAM)(參照圖2)。 [0042] 將此[實施例2]中所製作者,亦即在玻璃基板的表面上形成電荷保持層,並使己基吸附於此電荷保持層的表面上而形成自組裝單分子膜(官能基層)者作為評定基板2。 [0043] [比較例1] 根據與[實施例1]相同的處理,在100mm×100mm之玻璃基板(浮法玻璃)的表面上形成電荷保持層。 [0044] 將此[比較例1]中所製作者,亦即在玻璃基板的表面上僅形成有電荷保持層者作為比較基板1。 [0045] [比較例2] 根據與[實施例1]相同的處理,在100mm×100mm之玻璃基板(浮法玻璃)的表面上形成電荷保持層。 [0046] 將形成有此電荷保持層的玻璃基板、與自組裝單分子膜形成用之溶液:十八基三甲氧基矽烷0.5ml收容於密閉容器內,並將此密閉容器配置於真空加熱爐內。然後,在爐內壓力0.1kPa以下的減壓環境下於170℃加熱2小時,使十八基吸附於電荷保持層的表面上,而形成自組裝單分子膜(SAM)(參照圖3)。 [0047] 將此[比較例2]中所製作者,亦即在玻璃基板的表面上形成電荷保持層,並使十八基吸附於此電荷保持層的表面上而形成自組裝單分子膜(官能基層)者作為比較基板2。 [0048] -表面自由能的評定- <接觸角測定> 作為接觸角測定所使用的溶媒,係準備水、二碘甲烷、正十六烷,並將此各溶媒,各以5μl對[實施例1]中所製作的評定基板1滴下,並測定各溶媒的接觸角。此接觸角測定係對評定基板1的5處進行,以此5處的平均作為各溶媒的接觸角。 [0049] <表面自由能的算出> 將上述接觸角測定中所得之各溶媒的接觸角θ代入由Young式與擴展Fowkes式所導出的下述式(1),以所得3個算式為聯立方程式對其求解而求出γS d
、γS p
、及γS h
,並算出表面自由能(=γS d
+γS p
+γS h
)。將其結果示於下述表2。 [0050][0051] 於此,(1)式中,γS d
、γS p
、γS h
係分別表示基板(官能基層、電荷保持層)的分散力成分、極性力成分、氫鍵力成分。 [0052] 又,γL
、γL d
、γL p
、γL h
係分別表示溶媒的表面自由能、分散力成分、極性力成分、氫鍵力成分。水、二碘甲烷、正十六烷之各溶媒的表面自由能γL
、分散力成分γL d
、極性力成分γL p
、氫鍵力成分γL h
為已知值。 [0053] 進而,對[實施例2]中所製作的評定基板2、[比較例1]中所製作的比較基板1、及[比較例2]中所製作的比較基板2之各基板,亦分別以與上述同樣的方法測定接觸角並算出表面自由能。將其各結果示於下述表2。 [0054] 又,下述表2中亦記載有自組裝單分子膜的厚度(官能基的厚度)。此外,就厚度而言,係以電荷保持層表面與自組裝單分子膜(官能基層)之間的長度作為厚度(參照圖1~圖3)。 [0055][0056] 由表2之結果,可確認表面吸附有甲基、己基之各官能基的評定基板1、2、及表面吸附有十八基(官能基)的比較基板2,與未吸附有官能基的比較基板1相比,可降低表面自由能。具體而言,可確認:就表面未吸附有官能基的比較基板1,其表面自由能為100mJ/m2
以上;相對於此,就表面吸附有官能基的評定基板1、2及比較基板2,可使表面自由能成為50mJ/m2
以下之較低的值。 [0057] -防污性能的評定- <粒子附著試驗> 對評定基板1、評定基板2、比較基板1、及比較基板2之各基板,使用假想為屋外污染的任意粒子,進行噴灑一定時間的粒子附著試驗。 [0058] <穿透率的變化率測定> 首先,就供測定穿透率的裝置參照圖4加以說明。 [0059] 此圖4所示裝置係具備:鹵素燈101;將此鹵素燈101的輸出光(鹵素光)聚集於試樣S(待測定穿透率之各基板)的聚光透鏡102;供檢測穿透試樣S的光的光檢測器103;及供輸入光檢測器103之輸出訊號的個人電腦104等。 [0060] 個人電腦104係基於光檢測器103之輸出訊號求取試樣S的鹵素光的穿透率(試樣S的穿透光強度/朝試樣S的入射光強度)。而且,個人電腦104係求取進行上述粒子附著試驗前之試樣S的穿透率、與進行粒子附著試驗後之試樣S的穿透率的差(穿透率的變化率)。 [0061] 然後,對此種裝置分別裝設評定基板1、評定基板2、比較基板1、及比較基板2之各基板的試樣S(粒子附著試驗前者與粒子附著試驗後者),並針對此各基板測定上述粒子附著試驗前後之穿透率的變化率。將其結果示於下述表3。 [0062] 表3中,係設比較基板1之穿透率的變化率為100而表示評定基板1、2及比較基板2之各穿透率的變化率(%)。表3中,穿透率的變化率(粒子附著試驗前後之穿透率的變化率)愈小,表示物質(粒子)向基板表面的附著量愈低。此外,表3中亦記載自組裝單分子膜的厚度(官能基的厚度)。 [0063][0064] 由表3之結果,可確認評定基板1及評定基板2,即表面吸附有50mJ/m2
以下之低表面自由能的官能基(甲基、己基),且此官能基層的厚度為未達1nm(0.19nm、0.89nm)的基板,比起未吸附有官能基的比較基板1穿透率的變化率較小,可提升防污性能(物質附著之減少效果)。 [0065] 又,如比較基板2,即使表面吸附有低表面自由能的官能基(十八基),但此官能基層的厚度較厚(2.0nm)時,仍可確認比起未吸附有官能基的比較基板1(僅因靜電斥力而減少物質附著者),穿透率的變化率較大,防污性能降低。 [0066] 由以上所述,藉由在電荷保持層的表面上附加官能基長度(厚度)未達1nm且為50mJ/m2
以下之低表面自由能的官能基,可謂可高於僅由靜電斥力所產生的物質附著減少效果地減少物質向基板(基體)表面的附著。研判這是因為,藉由在不喪失電荷保持層的靜電排斥機能下減少分子間力所引起的物質附著,可提升防污性能之故。 [產業上可利用性] [0067] 本發明可有效地利用於可減少物質向基體的表面的附著之基體保護膜、及、此種基體保護膜形成於表面而成的防止附著之構件、與其形成方法。[Modes for Carrying Out the Invention] [0011] Hereinafter, embodiments of the present invention will be described based on the drawings. [0012] [Embodiment 1] FIG. 1 is a schematic diagram showing an example of the base protective film of the present invention. The base
[0068]1、11‧‧‧基體2、12‧‧‧基體保護膜3、13‧‧‧電荷保持層4、14‧‧‧官能基層10、20‧‧‧防止附著之構件[0068] 1. 11‧‧‧
[0010] 圖1為表示本發明之基體保護膜的一例的示意圖。 圖2為表示本發明之基體保護膜的另一例的示意圖。 圖3為表示比較例2中所形成之電荷保持層及自組裝單分子膜(SAM)的示意圖。 圖4為表示供測定穿透率之裝置的一例的示意結構圖。Fig. 1 is the schematic diagram showing an example of the base protective film of the present invention. Fig. 2 is a schematic view showing another example of the base protective film of the present invention. FIG. 3 is a schematic diagram showing the charge holding layer and self-assembled monolayer (SAM) formed in Comparative Example 2. FIG. Fig. 4 is a schematic configuration diagram showing an example of an apparatus for measuring transmittance.
1‧‧‧基體 1‧‧‧Substrate
2‧‧‧基體保護膜 2‧‧‧Substrate protective film
3‧‧‧電荷保持層 3‧‧‧Charge Holding Layer
4‧‧‧官能基層 4‧‧‧Functional base layer
10‧‧‧防止附著之構件 10‧‧‧Components to prevent adhesion
Claims (7)
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| JP2017010123A JP6441973B2 (en) | 2017-01-24 | 2017-01-24 | Substrate protective film and adhesion preventing member |
| JP2017-010123 | 2017-01-24 |
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| TWI762552B true TWI762552B (en) | 2022-05-01 |
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| JP (1) | JP6441973B2 (en) |
| KR (1) | KR102315145B1 (en) |
| CN (1) | CN110225895B (en) |
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| CN101412837A (en) * | 2007-10-18 | 2009-04-22 | Tdk株式会社 | Active energy ray-curable resin composition and laminate thereof |
| JP2009212435A (en) * | 2008-03-06 | 2009-09-17 | Sharp Corp | Low-reflectivity base, solar cell module using the same, and method of manufacturing low-reflectivity base |
| CN101626989A (en) * | 2006-11-14 | 2010-01-13 | 法国圣戈班玻璃厂 | Porous layer, method for the production thereof and use thereof |
| CN103635313A (en) * | 2011-06-06 | 2014-03-12 | 太阳化学工业株式会社 | Method for affixing water-and-oil-repellent layer to amorphous carbon film layer, and layered product formed by said method |
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| FR2722493B1 (en) * | 1994-07-13 | 1996-09-06 | Saint Gobain Vitrage | MULTI-LAYERED HYDROPHOBIC GLAZING |
| JP3401125B2 (en) * | 1995-07-25 | 2003-04-28 | 松下電器産業株式会社 | Method for forming siloxane-based thin film |
| KR20090034907A (en) * | 2006-07-25 | 2009-04-08 | 사스티나부르 . 테크노로지 가부시키가이샤 | Gas protection method |
| US8906298B2 (en) | 2008-04-11 | 2014-12-09 | Central Motor Wheel Co., Ltd. | Method for protecting substrate |
| KR101100380B1 (en) * | 2009-06-10 | 2011-12-30 | 도레이첨단소재 주식회사 | Surface treatment method for treating the surface of the substrate with high hydrophobicity |
| US20130323464A1 (en) * | 2012-05-31 | 2013-12-05 | Liang Liang | Coated article comprising a hydrophobic anti-reflection surface, and methods for making the same |
| JP6419610B2 (en) * | 2015-03-12 | 2018-11-07 | リンテック株式会社 | Film for laminating transparent conductive film, method for producing the same, and transparent conductive film |
-
2017
- 2017-01-24 JP JP2017010123A patent/JP6441973B2/en active Active
- 2017-12-21 KR KR1020197022786A patent/KR102315145B1/en active Active
- 2017-12-21 CN CN201780083902.8A patent/CN110225895B/en not_active Expired - Fee Related
- 2017-12-21 WO PCT/JP2017/045923 patent/WO2018139125A1/en not_active Ceased
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Patent Citations (5)
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|---|---|---|---|---|
| US5352485A (en) * | 1993-04-08 | 1994-10-04 | Case Western Reserve University | Synthesis of metal oxide thin films |
| CN101626989A (en) * | 2006-11-14 | 2010-01-13 | 法国圣戈班玻璃厂 | Porous layer, method for the production thereof and use thereof |
| CN101412837A (en) * | 2007-10-18 | 2009-04-22 | Tdk株式会社 | Active energy ray-curable resin composition and laminate thereof |
| JP2009212435A (en) * | 2008-03-06 | 2009-09-17 | Sharp Corp | Low-reflectivity base, solar cell module using the same, and method of manufacturing low-reflectivity base |
| CN103635313A (en) * | 2011-06-06 | 2014-03-12 | 太阳化学工业株式会社 | Method for affixing water-and-oil-repellent layer to amorphous carbon film layer, and layered product formed by said method |
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| JP2018118864A (en) | 2018-08-02 |
| JP6441973B2 (en) | 2018-12-19 |
| KR102315145B1 (en) | 2021-10-20 |
| KR20190103294A (en) | 2019-09-04 |
| CN110225895A (en) | 2019-09-10 |
| WO2018139125A1 (en) | 2018-08-02 |
| CN110225895B (en) | 2021-11-02 |
| TW201829086A (en) | 2018-08-16 |
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