TWI761297B - Package structure - Google Patents

Abstract

A package structure is provided to include a carrier and at least one interconnect structure. The carrier has at least one first through hole and plural second through holes. The first through hole is close to a central region of the carrier, the second through holes are close to a peripheral region of the carrier, and a cross-sectional area of the first through hole is smaller than a total cross-sectional area of the second through holes. The interconnect structure is located on the carrier and covers the first through hole and the second through holes.

Description

Package structure

The present disclosure relates to a package structure.

With the continuous advancement of integrated circuit (IC) manufacturing technology, the demand for packaging processes has increased. Currently, there are many technologies applied in the field of chip packaging, such as Fan-out Panel level Package (FOPLP), chip size structure Flip-chip packaging modules such as Chip Scale Package (CSP), Direct Chip Attached (DCA) or Multi-Chip Module (MCM), or three-dimensional stacking of chips Chip stacking technology integrated into three-dimensional integrated circuits (3D IC), etc.

However, due to the material properties of the insulating plate body used for die bonding, the insulating plate body is easily deformed due to thermal expansion and contraction during the thermal cycle of the packaging process, resulting in displacement of the circuit layers in the insulating plate body. Although the support board can be pasted on one side of the insulating board, warpage deformation of the insulating board may still occur after the support board is removed, so that subsequent solder bumps cannot be effectively or accurately bonded to the circuit layer.

One technical aspect of the present disclosure is a package structure.

According to some embodiments of the present disclosure, a package structure includes a carrier and at least one interconnect structure. The carrier has at least one first through hole and a plurality of second through holes. The first through hole is close to the central area of the carrier, the second through hole is close to the peripheral area of the carrier, and the cross-sectional area of the first through hole is smaller than the total cross-sectional area of the second through hole. The interconnect structure is located on the carrier and covers the first through hole and the second through hole.

In some embodiments, the diameter of the first through holes is the same as the diameter of each second through hole, and the density of the first through holes is smaller than the density of the second through holes.

In some embodiments, the diameter of the first through holes is larger than the diameter of each of the second through holes, and the number of the first through holes is smaller than the number of the second through holes.

In some embodiments, the diameter of the first through holes is smaller than the diameter of each second through hole, and the number of the first through holes is smaller than the number of the second through holes.

In some embodiments, the carrier has a plurality of first through holes, and the total cross-sectional area of the first through holes is smaller than the total cross-sectional area of the second through holes.

In some embodiments, the diameter of each of the first through holes is smaller than the diameter of each of the second through holes, and the number of the first through holes is greater than the number of the second through holes.

In some embodiments, the above-mentioned package structure further includes a plurality of metal fillers. The metal filling material is respectively located in the first part of the first through hole and the first part of the second through hole, wherein there is no metal filling material in the second part of the first through hole and the second part of the second through hole.

In some embodiments, the total cross-sectional area of the second portion of the first through hole is smaller than the total cross-sectional area of the second portion of the second through hole.

In some embodiments, the package structure described above includes two interconnect structures, and the carrier is located between the two interconnect structures. Each of the two interconnect structures includes a dielectric layer and conductive lines located in the dielectric layer. The two wires of the two interconnecting structures are respectively electrically connected to two ends of one of the metal fillers.

In some embodiments, the thermal expansion coefficient of the metal filler material is different from that of the carrier.

In some embodiments, the thermal expansion coefficient of the metal filler is greater than the thermal expansion coefficient of the carrier.

In some embodiments, the above-mentioned package structure further includes a plurality of metal fillers. The metal filling material is respectively located in the first through hole and the first part of the second through hole, wherein there is no metal filling material in the second part of the second through hole.

In some embodiments, the above-mentioned package structure further includes a plurality of metal fillers. The metal filling material is respectively located in the first through hole and the second through hole, wherein the diameter of the metal filling material in the first through hole is smaller than the diameter of the metal filling material in the second through hole.

In some embodiments, the interconnect structure described above includes a dielectric layer and wires located in the dielectric layer. One of the second through holes overlaps the wire in the vertical direction.

In some embodiments, the first through hole and the second through hole are parallel to each other.

In the above-mentioned embodiments of the present disclosure, since the carrier has at least one first through hole near the central area of the carrier and a plurality of second through holes near the peripheral area of the carrier, and the cross-sectional area of the first through hole is smaller than the total of the second through holes Therefore, when the thermal expansion coefficient of the carrier and the different material layers (such as interconnect structures) on the carrier are different and warpage occurs, the design of the first through hole and the second through hole can change the warpage of the carrier, The amount of warpage of the carrier is reduced by allowing more space for the surrounding area of the carrier to shrink. In this way, the displacement of the wires in the interconnect structure due to heat treatment during the formation, bonding of the wafer, and the molding of the wafer can be avoided, so that the solder bumps can be accurately bonded to the interconnect structure. on the wire.

The embodiments disclosed below provide many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present case. Of course, these examples are merely examples and are not intended to be limiting. In addition, reference numerals and/or letters may be repeated in various instances herein. This repetition is for brevity and clarity, and does not in itself specify the relationship between the various embodiments and/or configurations discussed.

Spatially relative terms such as "below," "below," "lower," "above," "above," and the like may be used herein for convenience of description to describe The relationship of one element or feature to another element or feature as shown in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation shown in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

1 to 3 are cross-sectional views illustrating various steps of forming the package structure 100 according to an embodiment of the present disclosure. Referring to FIG. 1 and FIG. 2 simultaneously, the carrier 110 has a top surface 112 and a bottom surface 114 opposite to each other. The material of the carrier 110 may be glass, but not limited thereto. The carrier 110 has a central area C and a peripheral area P surrounding the central area C. As shown in FIG. The carrier 110 can be drilled to form at least one first through hole O1 and a plurality of second through holes O2, so that the physical structure of the carrier 110 can be changed to improve warpage. The first through holes O1 and the second through holes O2 penetrate through the top surface 112 and the bottom surface 114 of the carrier 110 , and the first through holes O1 and the second through holes O2 may be parallel to each other. In addition, the first through hole O1 is close to the central area C of the carrier 110 , the second through hole O2 is close to the peripheral area P of the carrier 110 , and the cross-sectional area of the first through hole O1 is smaller than the total cross-sectional area of the second through hole O2 . The positions and numbers of the first through holes O1 and the second through holes O2 can be changed according to different warpage resistance requirements, and FIG. 2 is only an example.

Referring to FIG. 3 , after the first through holes O1 and the second through holes O2 are formed, an interconnection structure 120 covering the first through holes O1 and the second through holes O2 may be formed on the top surface 112 of the carrier 110 , so that the The package structure 100 is obtained. The interconnect structure 120 may include a dielectric layer 122 and wires 124 located in the dielectric layer 122 . In this embodiment, the wire 124 may be a redistribution line (RDL), and the material thereof may be copper or other suitable metals for transmitting electrical signals; the material of the dielectric layer 122 may be epoxy resin (Epoxy) or Polyimide (Polyimide; PI), but not used to limit the present disclosure. The second through hole O2 may overlap with the second wire 124 in the vertical direction, or overlap with the dielectric layer 122 in the vertical direction, which is not intended to limit the present disclosure.

Specifically, since the carrier 110 has at least one first through hole O1 near the central region C of the carrier 110 and a plurality of second through holes O2 near the peripheral region P of the carrier 110 , and the cross-sectional area of the first through hole O1 is smaller than The total cross-sectional area of the second through hole O2, so when the carrier 110 and the different material layers thereon (eg, the interconnect structure 120) have different thermal expansion coefficients and warpage occurs, the first through hole O1 and the second through hole The design of O2 can change the warpage amount of the carrier 110 , so that the surrounding area P of the carrier 110 has more space to shrink, thereby reducing the warpage amount of the carrier 110 . In this way, it is possible to avoid displacement of the wires 124 in the interconnect structure 120 due to heat treatment during the formation, bonding of the wafer, and molding of the wafer, so that the solder bumps can be accurately bonded to the interconnect. on wire 124 of structure 120 .

In this embodiment, the diameter d1 of the first through hole O1 and the diameter d2 of each second through hole O2 may be the same, that is, the first through hole O1 and the second through hole O2 have the same size. In addition, the density of the first through holes O1 is smaller than that of the second through holes O2. In this design, the cross-sectional area of the first through hole O1 may be smaller than the total cross-sectional area of the second through hole O2.

It should be understood that the connection relationships, materials and functions of the components already described will not be repeated, but will be described first. In the following description, other forms of packaging structures will be described.

FIGS. 4 to 10 are cross-sectional views of package structures 100 a to 100 g according to various embodiments of the present disclosure. Referring to FIG. 4 , the difference from the embodiment shown in FIG. 3 is that the package structure 100 a includes the interconnect structure 120 a in addition to the interconnect structure 120 . The interconnect structures 120 and 120a are located on the top surface 112 and the bottom surface 114 of the carrier 110, respectively. That is, the carrier 110 is located between the two interconnect structures 120, 120a.

Referring to FIG. 5, the package structure 100b includes a carrier 110 and an interconnection structure 120. The difference from the embodiment in FIG. 3 is that the diameter d1 of the first through hole O1 of the carrier 110 of the package structure 100b is larger than that of each second through hole O2 diameter d2, and the number of the first through holes O1 is smaller than the number of the second through holes O2. In this embodiment, the number of the first through holes O1 is 1, and the number of the second through holes O2 is 5, but the present disclosure is not limited. With such a design, the cross-sectional area of the first through hole O1 can be smaller than the total cross-sectional area of the second through hole O2 , so that the surrounding area P of the carrier 110 of the package structure 100b has more space to shrink, thereby reducing the warpage of the carrier 110 .

Referring to FIG. 6 , the difference from the embodiment shown in FIG. 5 is that the package structure 100 c includes an interconnect structure 120 a in addition to the interconnect structure 120 . The interconnect structures 120 and 120a are located on the top surface 112 and the bottom surface 114 of the carrier 110, respectively. That is, the carrier 110 of the package structure 100c is located between the two interconnect structures 120, 120a.

Referring to FIG. 7 , the package structure 100 d includes a carrier 110 and an interconnect structure 120 . The carrier 110 of the package structure 100d has a plurality of first through holes O1, and the total cross-sectional area of the first through holes O1 is smaller than the total cross-sectional area of the second through holes O2. In addition, the diameter d1 of each first through hole O1 is smaller than the diameter d2 of each second through hole O2, and the number of the first through holes O1 is greater than the number of the second through holes O2. In this embodiment, the number of the first through holes O1 is 4, and the number of the second through holes O2 is 3, but the present disclosure is not limited. With such a design, the total cross-sectional area of the first through holes O1 can be smaller than the total cross-sectional area of the second through holes O2, so that the surrounding area P of the carrier 110 of the package structure 100d has more space to shrink, thereby reducing the warpage of the carrier 110. .

Referring to FIG. 8 , the difference from the embodiment in FIG. 7 is that the package structure 100 e of FIG. 8 includes an interconnect structure 120 a in addition to the interconnect structure 120 . The interconnect structures 120 and 120a are located on the top surface 112 and the bottom surface 114 of the carrier 110, respectively. That is, the carrier 110 of the package structure 100e is located between the two interconnect structures 120, 120a. In addition, in this embodiment, the number of the first through holes O1 is 6, the number of the second through holes O2 is 5, and the total cross-sectional area of the first through holes O1 is smaller than the total cross-sectional area of the second through holes O2.

Referring to FIG. 9 , the package structure 100f includes a carrier 110 and an interconnect structure 120 . The interconnect structure 120 is located on the top surface 112 of the carrier 110 . The carrier 110 of the package structure 100f has at least one first through hole O1 and a plurality of second through holes O2, and the total cross-sectional area of the first through holes O1 is smaller than the total cross-sectional area of the second through holes O2. In addition, the diameter d1 of the first through holes O1 is smaller than the diameter d2 of each of the second through holes O2, and the number of the first through holes O1 is smaller than the number of the second through holes O2. In this embodiment, the number of the first through holes O1 is 1, and the number of the second through holes O2 is 3, but the present disclosure is not limited. With such a design, the cross-sectional area of the first through hole O1 can be smaller than the total cross-sectional area of the second through hole O2 , so that the surrounding area P of the carrier 110 of the package structure 100f has more space to shrink, thereby reducing the warpage of the carrier 110 .

Referring to FIG. 10 , the difference from the embodiment shown in FIG. 9 is that the package structure 100g includes an interconnection structure 120a in addition to the interconnection structure 120 . The interconnect structures 120 and 120a are located on the top surface 112 and the bottom surface 114 of the carrier 110, respectively. That is, the carrier 110 of the package structure 100g is located between the two interconnect structures 120, 120a. In addition, in this embodiment, the number of the second through holes O2 is 5, and the cross-sectional area of the first through holes O1 is smaller than the total cross-sectional area of the second through holes O2.

FIGS. 11 to 13 are cross-sectional views illustrating steps of forming a package structure 100h according to another embodiment of the present disclosure. Referring to FIG. 11 and FIG. 12 at the same time, the carrier 110 may undergo a drilling process to form a first through hole O11 and a plurality of second through holes O21 and O22. The first through holes O11 are close to the central area C of the carrier 110 , and the second through holes O21 and O22 are close to the peripheral area P of the carrier 110 . The positions and numbers of the first through holes O11 and the second through holes O21 and O22 can be changed according to different warpage resistance requirements, and FIG. 11 is only an example.

In one embodiment, the carrier 110 has a single first through hole O11 and second through holes O21 and O22 with different diameters. The diameter d4 of the second through hole O21 is larger than the diameter d3 of the second through hole O22 , and the diameter d1 of the first through hole O11 is substantially the same as the diameter d3 of the second through hole O22 . In the subsequent process, a plurality of metal fillers 130 can be filled in the first through holes O11 and the second through holes O21, so that the metal fillers 130 are located in the first through holes O11 and the second through holes O21 (ie the second through holes O21). In the first part of the hole), and the second through hole O22 (ie, in the second part of the second through hole) has no metal filler. Such a design can make the cross-sectional area (eg, 0) of the first through hole O11 without metal filler 130 smaller than the total cross-sectional area of the second through hole O21 and O22 without metal filler 130 (eg, the total cross-sectional area of the second through hole O22 ). area), the Coefficient of Thermal Expansion (CTE) of the carrier 110 is changed to improve the warpage.

In this embodiment, the material of the metal filler 130 can be copper, aluminum or other suitable metals, and the thermal expansion coefficient of the metal filler 130 is different from that of the carrier 110 , for example, the thermal expansion coefficient of the metal filler 130 is greater than that of the carrier 110 .

In another embodiment, the carrier 110 further has a first through hole O12 (as shown by the dotted line). The first through hole O12 has a diameter d1 and is close to the central area C of the carrier 110 . The metal filler 130 is located in the first through hole O11 and the second through hole O21 (ie, in the first part of the first through hole and the first part of the second through hole), and in the first through hole O12 and the second through hole O22 (ie, in the second part of the first through hole and the second part of the second through hole) no metal filler 130 . Such a design can make the total cross-sectional area of the first through holes O11 and O12 without metal fillers 130 (for example, the cross-sectional area of the first through holes O12 ) smaller than the total cross-sectional area of the second through holes O21 and O22 without metal fillers 130 (eg the total cross-sectional area of the second through hole O22), the thermal expansion coefficient of the carrier 110 is changed to improve warpage.

Referring to FIG. 13 , after the structure of FIG. 12 is formed, an interconnection structure 120 covering the first through holes O11 , O12 , the second through holes O21 , O22 and the metal filling material 130 may be formed on the top surface 112 of the carrier 110 , the package structure 100h can be obtained. In this embodiment, the wires 124 of the interconnection structure 120 and the metal filling material 130 may overlap and be electrically connected in the vertical direction, but the present disclosure is not limited thereto.

FIGS. 14 to 16 are cross-sectional views of package structures 100i to 100k according to various embodiments of the present disclosure. Referring to FIG. 14 , the difference from the embodiment shown in FIG. 13 is that the package structure 100 i includes an interconnect structure 120 a in addition to the interconnect structure 120 . The interconnect structures 120 and 120a are located on the top surface 112 and the bottom surface 114 of the carrier 110, respectively. That is, the carrier 110 of the package structure 100i is located between the two interconnect structures 120, 120a. In addition, in this embodiment, the first through hole O11 and the right second through hole O21 are free of the metal filler 130 , and the right second through hole O22 is filled with the metal filler 130 . Such a design can make the cross-sectional area of the first through hole O11 of the metal-free filler 130 smaller than the total cross-sectional area of the second through-holes O21 and O22 of the metal-free filler 130, so that the thermal expansion coefficient of the carrier 110 can be changed to improve warpage . In this embodiment, the two wires 124 of the two interconnection structures 120 and 120a can be electrically connected to two ends of the metal filler 130 to be electrically connected respectively.

Referring to FIG. 15 , the package structure 100j includes a carrier 110 , a plurality of metal fillers 130 and an interconnection structure 120 . The carrier 110 has at least one first through hole O1 and a plurality of second through holes O2. The metal filling material 130 is respectively located in the first through hole O1 and the second through hole O2 , that is, all the first through hole O1 and the second through hole O2 are filled with the metal filling material 130 . In this embodiment, the first through hole O1 and the metal filling material 130 therein have a diameter d1, the second through hole O2 and the metal filling material 130 therein have a diameter d2, and the metal filling material in the first through hole O1 The diameter d1 of the 130 is smaller than the diameter d2 of the metal filler 130 in the second through hole O2. With such a design, the cross-sectional area of the metal filler 130 in the first through hole O1 can be smaller than the total cross-sectional area of the metal filler 130 in the second through hole O2 , thereby reducing the warpage of the carrier 110 . The interconnection structure 120 is located on the top surface 112 of the carrier 110 , and the wires 124 of the interconnection structure 120 may overlap the second through hole O2 in a vertical direction.

Referring to FIG. 16, the difference from the embodiment shown in FIG. 15 is that the package structure 100k further includes an interconnection structure 120a, and the number of second through holes O2 and metal fillers 130 is larger. The interconnect structures 120 and 120a are located on the top surface 112 and the bottom surface 114 of the carrier 110, respectively. That is, the carrier 110 of the package structure 100k is located between the two interconnect structures 120, 120a. With such a design, the cross-sectional area of the metal filler 130 in the first through hole O1 can be smaller than the total cross-sectional area of the metal filler 130 in the second through hole O2 , thereby reducing the warpage of the carrier 110 .

The foregoing has outlined features of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure.

100,100a~100k: Package structure 110: Carrier 112: top surface 114: Underside 120, 120a: Interconnect Structure 122: Dielectric layer 124: Wire 130: Metal filler C: Central District d1,d2,d3,d4: diameter O1: first through hole O11: first through hole O12: first through hole O2: second through hole O21: second through hole O22: second through hole P: Surrounding area

Aspects of the present disclosure are best understood from the following description when read in conjunction with the accompanying drawings. Note that in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion. FIGS. 1 to 3 are cross-sectional views illustrating various steps of forming a package structure according to an embodiment of the present disclosure. 4 to 10 are cross-sectional views illustrating a package structure according to various embodiments of the present disclosure. FIGS. 11 to 13 are cross-sectional views illustrating steps of forming a package structure according to another embodiment of the present disclosure. 14 to 16 are cross-sectional views illustrating a package structure according to various embodiments of the present disclosure.

Domestic storage information (please note in the order of storage institution, date and number) none Foreign deposit information (please note in the order of deposit country, institution, date and number) none

100: Package structure

110: Carrier

112: top surface

114: Underside

120: Interconnect structure

122: Dielectric layer

124: Wire

C: Central District

d1,d2: diameter

O1: first through hole

O2: second through hole

P: Surrounding area

Claims (15)

A package structure including: A carrier having at least one first through hole and a plurality of second through holes, wherein the first through hole is close to the central area of the carrier, the second through holes are close to the surrounding area of the carrier, and the first through hole The cross-sectional area is less than the total cross-sectional area of the second through holes; and At least one interconnect structure is located on the carrier and covers the first through holes and the second through holes. The package structure of claim 1, wherein the diameter of the first through hole is the same as the diameter of each second through hole, and the density of the first through hole is smaller than the density of the second through holes. The package structure of claim 1, wherein the diameter of the first through hole is greater than the diameter of each of the second through holes, and the number of the first through holes is smaller than the number of the second through holes. The package structure of claim 1, wherein the diameter of the first through hole is smaller than the diameter of each of the second through holes, and the number of the first through holes is smaller than the number of the second through holes. The package structure of claim 1, wherein the carrier has a plurality of the first through holes, and the total cross-sectional area of the first through holes is smaller than the total cross-sectional area of the second through holes. The package structure of claim 5, wherein the diameter of each of the first through holes is smaller than the diameter of each of the second through holes, and the number of the first through holes is greater than the number of the second through holes quantity. The package structure according to claim 5, further comprising: A plurality of metal fillers are respectively located in a first part of the first through holes and a first part of the second through holes, wherein a second part of the first through holes and the second through holes There is no such metal filler in a second part of the . The package structure of claim 7, wherein the total cross-sectional area of the second portion of the first through holes is smaller than the total cross-sectional area of the second portion of the second through holes. The package structure of claim 7, comprising two of the interconnect structures, and the carrier is located between the two interconnect structures, wherein each of the two interconnect structures includes a dielectric layer and is located in the dielectric layer a wire, the two wires of the two interconnecting structures are respectively electrically connected to two ends of one of the metal fillers. The package structure of claim 7, wherein the thermal expansion coefficients of the metal fillers are different from those of the carrier. The package structure of claim 7, wherein the thermal expansion coefficient of the metal fillers is greater than the thermal expansion coefficient of the carrier. The package structure as described in claim 1, further comprising: A plurality of metal fillers are respectively located in a first part of the first through holes and the second through holes, wherein a second part of the second through holes is free of the metal fillers. The package structure as described in claim 1, further comprising: A plurality of metal fillers are respectively located in the first through holes and the second through holes, wherein the diameter of the metal fillers in the first through holes is smaller than the diameter of the metals in the second through holes The diameter of the filler material. The package structure of claim 1, wherein the interconnect structure includes a dielectric layer and a wire in the dielectric layer, and one of the second through holes overlaps the wire in a vertical direction. The package structure of claim 1, wherein the first through holes and the second through holes are parallel to each other.

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