TWI761139B - Sensing apparatus and manufacturing method thereof - Google Patents

Abstract

A sensing apparatus and manufacturing method thereof are provided. The manufacturing method of the sensing apparatus includes the following steps. A substrate is provided. A patterned semiconductor layer is formed on the substrate. A gate insulating layer is formed on the substrate and overlies the patterned semiconductor layer. A gate electrode is formed on the gate insulating layer. An interlayer dielectric is formed on the substrate and overlies the gate electrode and the gate insulating layer, and the interlayer dielectric has dielectric openings which expose part of the patterned semiconductor layer. A second conductive material layer is formed on the interlayer dielectric. A photo-sensitive material layer is formed on the second conductive material layer. A patterned photo resistant layer is formed on the substrate by a mask. By the patterned photo resistant layer, part of the photo-sensitive material layer is removed to form a photo-sensing layer and part of the second conductive material layer is removed to form a first sensing electrode. A second sensing electrode is formed on the photo-sensing layer.

Description

Sensing device and method of making the same

The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a sensing device and a manufacturing method thereof.

With the advancement of technology, the functions of personal electronic devices are increasing day by day. For example, in addition to the call function, the mobile phones on the market often include camera functions, video functions, note-taking functions, Internet access functions, and other functions that are often used in life. These multi-functional electronic devices are often equipped with sensing devices, which can detect the light in the environment where the electronic products are located. The measuring device can also detect the fluctuation of the surface of the user's finger, so that the electronic product has the function of fingerprint recognition.

Generally, the photosensitive layer in the sensing device and the sensing electrode below it are made by different mask processes. However, offsets often occur between different mask processes. Therefore, in order to reduce the influence of the offset, the photosensitive layer is often retracted from the sensing electrode below it. As a result, the photosensitive area of the photosensitive layer may be reduced, thereby reducing the photosensitive capability of the sensing device.

The present invention provides a manufacturing method of a sensing device, which can reduce the mask manufacturing process and reduce the manufacturing cost.

The present invention provides a sensing device, which can have better photosensitive ability and better sensing quality.

The fabrication method of the sensing device of the present invention includes providing a substrate, forming a patterned semiconductor layer on the substrate, forming a gate insulating layer on the substrate and covering the patterned semiconductor layer, forming a gate on the gate on the insulating layer. An interlayer dielectric layer is formed on the substrate to cover the gate electrode and the gate insulating layer, and the interlayer dielectric layer has a dielectric opening exposing part of the patterned semiconductor layer. A second conductive material layer is formed on the interlayer dielectric layer, and a photosensitive material layer is formed on the second conductive material layer. A patterned photoresist layer is formed on the substrate by a photomask. Part of the photosensitive material layer is removed by the patterned photoresist layer to form a photosensitive layer, and a part of the second conductive material layer is removed to form a first sensing electrode. A second sensing electrode is formed on the photosensitive layer.

The sensing device of the present invention includes a substrate, an active element and a photosensitive element. The active element is disposed on the substrate, wherein the active element includes a gate electrode, a channel, a source electrode and a drain electrode. A photosensitive element, disposed on the substrate, wherein the photosensitive element includes a first sensing electrode, a second sensing electrode, and a photosensitive electrode sandwiched between the first sensing electrode and the second sensing electrode A photosensitive layer, wherein the first sensing electrode is electrically connected to the drain electrode, and the area of the photosensitive layer is substantially the same as that of the first sensing electrode.

Another sensing device of the present invention includes a substrate, an active element, and a photosensitive element. The active element is disposed on the substrate, wherein the active element includes a gate electrode, a channel, a source electrode and a drain electrode. A photosensitive element, disposed on the substrate, wherein the photosensitive element includes a first sensing electrode, a second sensing electrode, and a photosensitive electrode sandwiched between the first sensing electrode and the second sensing electrode A photosensitive layer, wherein the drain electrode completely overlaps the first sensing electrode.

Based on the above, in the sensing device of the present invention, by forming the first sensing electrode and the sensing layer under the same mask, the use of one mask can be reduced compared with the conventional process, thereby reducing the manufacturing of the sensing device. cost. In addition, the sensing device obtained by the manufacturing method of the sensing device of the present invention has a photosensitive layer with a larger area, so the photosensitive capability of the sensing device can be improved, and the quality of the sensing device can be improved.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. The same reference numerals refer to the same elements throughout the specification. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may refer to the existence of other elements between the two elements.

It will be understood that, although the terms "first", "second", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or sections should not be limited by limitations of these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, "a first element," "component," "region," "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not limiting. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms, including "at least one," unless the content clearly dictates otherwise. "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will also be understood that, when used in this specification, the terms "comprising" and/or "comprising" designate the stated feature, region, integer, step, operation, presence of an element and/or part, but do not exclude one or more The presence or addition of other features, entireties of regions, steps, operations, elements, components, and/or combinations thereof.

Furthermore, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element, as shown in the figures. It should be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "lower" may include an orientation of "lower" and "upper", depending on the particular orientation of the figures. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "below" can include an orientation of above and below.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed as having meanings consistent with their meanings in the context of the related art and the present invention, and are not to be construed as idealized or excessive Formal meaning, unless expressly defined as such herein.

Exemplary embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. Thus, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and/or tolerances, are to be expected. Accordingly, the embodiments described herein should not be construed as limited to the particular shapes of regions as shown herein, but rather include deviations in shapes resulting from, for example, manufacturing. For example, regions illustrated or described as flat may typically have rough and/or nonlinear features. Additionally, the acute angles shown may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.

1A to 1H are schematic diagrams of a manufacturing process of a sensing device according to a first embodiment of the present invention.

Referring to FIG. 1A , a substrate 110 is provided. The substrate 110 is, for example, a rigid substrate or a flexible substrate, and the present invention is not limited thereto. For example, the material of the substrate 110 can be glass, plastic, composite material or other materials that can provide support and can be fabricated into a plate-like structure.

Please continue to refer to FIG. 1A , a patterned semiconductor layer 130 is formed on the substrate 110 . The method for forming the patterned semiconductor layer 130 may, for example, utilize chemical vapor deposition to comprehensively form a semiconductor material layer (not shown) on the substrate 110 , and then use a lithography etching process to form the patterned semiconductor layer 130 . The patterned semiconductor layer 130 can be a single-layer or multi-layer structure, which includes amorphous silicon, polysilicon, microcrystalline silicon, single crystal silicon, organic semiconductor materials, and oxide semiconductor materials (eg, indium zinc oxide, indium gallium zinc oxide, etc.) compound, other suitable material, or a combination of the above), other suitable material, containing a dopant in the above-mentioned material, or a combination of the above-mentioned materials. In some embodiments, the buffer layer 120 may be formed on the substrate 110 before the semiconductor material layer is formed on the substrate 110 . The material of the buffer layer 120 is, for example, silicon nitride or silicon oxide, but the invention is not limited thereto.

Please continue to refer to FIG. 1A , a gate insulating layer 140 is formed on the substrate 110 and covers the patterned semiconductor layer 130 . The gate insulating layer 140 may be comprehensively formed on the substrate 110 to cover the upper surface and the side surface of the patterned semiconductor layer 130 . The gate insulating layer 140 is formed by, for example, physical vapor deposition, chemical vapor deposition, coating, or other suitable methods.

In this embodiment, the material of the gate insulating layer 140 may be inorganic materials (eg, silicon oxide, silicon nitride, silicon oxynitride, or a stack of at least two of the above-mentioned materials), organic materials (eg, polyamides) amine resin, epoxy resin or acrylic resin) or a combination of the above, but the present invention is not limited to this. The gate insulating layer 140 may have a single-layer structure, but the present invention is not limited thereto. In other embodiments, the gate insulating layer 140 can also be a multi-layer structure.

Please continue to refer to FIG. 1A , the gate G is formed on the gate insulating layer 140 . For example, a first conductive material layer (not shown) can be formed on the gate insulating layer 140 by using a physical vapor deposition method or a metal chemical vapor deposition method. Next, the first conductive material layer is patterned to form the first patterned conductive layer 150 on the gate insulating layer 140 , wherein a part of the first patterned conductive layer 150 can form the gate G. The first patterned conductive layer 150 is generally made of metal material, but the present invention is not limited thereto.

Please continue to refer to FIG. 1A , an interlayer dielectric layer 160 is formed on the substrate 110 . The interlayer dielectric layer 160 may be fully formed on the substrate 110 and cover the gate insulating layer 140 and the upper and side surfaces of the gate G. The interlayer dielectric layer 160 is formed by, for example, physical vapor deposition, chemical vapor deposition, coating, or other suitable methods. In this embodiment, the interlayer dielectric layer 160 further has dielectric openings 160a and 160b exposing part of the patterned semiconductor layer 130 . The dielectric openings 160a and 160b are formed by, for example, a lithography etching process.

In this embodiment, the material of the interlayer dielectric layer 160 may be inorganic materials (eg, silicon oxide, silicon nitride, silicon oxynitride, or a stack of at least two of the above-mentioned materials), organic materials (eg, polyamides) amine resin, epoxy resin or acrylic resin) or a combination of the above, but the present invention is not limited to this. The interlayer dielectric layer 160 may have a single-layer structure, but the present invention is not limited thereto. In other embodiments, the interlayer dielectric layer 160 can also be a multi-layer structure.

Please continue to refer to FIG. 1A , a second conductive material layer 170 is formed on the interlayer dielectric layer 160 . The second conductive material layer 170 is comprehensively formed on the interlayer dielectric layer 160 by, for example, physical vapor deposition method or metal chemical vapor deposition method, so as to cover the interlayer dielectric layer 160 and fill in the interlayer dielectric layer 160 . The dielectric openings 160 a and 160 b are used to electrically connect the second conductive material layer 170 and the patterned semiconductor layer 130 . The second conductive material layer 170 is generally made of metal material, but the present invention is not limited thereto.

Please continue to refer to FIG. 1A , a photosensitive material layer 180 is formed on the second conductive material layer 170 . The photosensitive material layer 180 is comprehensively formed on the second conductive material layer 170 by chemical vapor deposition, for example. In this embodiment, the material of the photosensitive material layer 180 includes silicon-rich oxide, but the invention is not limited thereto. According to other embodiments, the material of the photosensitive material layer 180 may include silicon-rich nitride, silicon-rich oxynitride, silicon-rich carbide, silicon-rich oxycarbide, hydrogenated silicon-rich oxide, hydrogenated silicon-rich nitride, hydrogenated silicon-rich nitride Silicon carbide or a combination thereof.

1A and 1B at the same time, a patterned photoresist layer PPR is formed on the substrate 110 by the mask MK. For example, a photoresist material layer PR may be formed on the photosensitive material layer 180 . Then, a photolithography process is performed on the photoresist material layer PR by using the photomask MK to form a patterned photoresist layer PPR.

In this embodiment, the mask MK is a half-tone mask or a gray-scale mask. The mask MK has a first region R1 and a second region R2, and the light transmittance of the second region R2 may be higher than that of the first region R1. The patterned photoresist layer PPR includes a first photoresist region PPR1 and a second photoresist region PPR2, and the thickness t1 of the first photoresist region PPR1 is greater than the thickness t2 of the second photoresist region PPR2. The first region R1 of the mask MK corresponds to the first photoresist region PPR1 of the patterned photoresist layer PPR, and the second region R2 of the mask MK corresponds to the second photoresist region PPR2 of the patterned photoresist layer PPR.

1C and 1D, a patterned photosensitive material layer 180 is formed by removing part of the photosensitive material layer 180 through the patterned photoresist layer PPR, and a part of the second conductive material layer 170 is removed to form a first photosensitive material layer 180P. measuring electrode 172 . For example, the first photoresist region PPR1 and the second photoresist region PPR2 of the patterned photoresist layer PPR can be used as a mask, and the first photoresist region PPR1 and the second photoresist region PPR1 and the second photoresist region not not covered by the first photoresist region PPR1 and the second photoresist region can be removed by one or more etchings. Part of the photosensitive material layer 180 and part of the second conductive material layer 170 covered by the two photoresist regions PPR2 form a patterned photosensitive material layer 180P and a first sensing electrode 172 .

In this embodiment, the patterned photosensitive material layer 180P and the first sensing electrode 172 may be formed by two etching processes. For example, as shown in FIG. 1C , the first etching process first removes part of the photosensitive material layer 180 not covered by the first photoresist region PPR1 and the second photoresist region PPR2 to form a patterned photosensitive material Material layer 180P. After that, as shown in FIG. 1D , a second etching process removes the part of the second conductive material layer 170 not covered by the first photoresist region PPR1 and the second photoresist region PPR2 to form a second patterned conductive material layer 170P, wherein the second patterned conductive layer 170P includes the first sense electrode 172 . In a possible embodiment, the patterned photosensitive material layer 180P and the first sensing electrode 172 can be formed through the same etching process, but the invention is not limited to this. The etching process may be, for example, wet etching or dry etching, but the invention is not limited thereto.

Referring to FIG. 1D , the second patterned conductive layer 170P may further include a first signal line 174 and/or a second signal line 176 . The first sensing electrode 172 and the second signal line 176 correspond to the first photoresist region PPR1, and the first signal line 174 corresponds to the second photoresist region PPR2. The first sensing electrode 172 and the second signal line 176 are connected to the patterned semiconductor layer 130 through the dielectric openings 160b and 160a, respectively.

Referring to FIG. 1E , part of the patterned photoresist layer PPR is removed. For example, the thickness of the first photoresist region PPR1 is reduced to form the third photoresist region PPR3, and the second photoresist region PPR2 is removed to expose part of the patterned photosensitive material layer 180P. The method of removing the patterned photoresist layer PPR may be, for example, an ashing process, but the present invention is not limited thereto.

Referring to FIG. 1F , a part of the patterned photosensitive material layer 180P is removed by the third photoresist region PPR3 to form a photosensitive layer 182 . For example, the third photoresist region PPR3 of the patterned photoresist layer PPR can be used as a mask to remove part of the patterned photoresist that is not covered by the third photoresist region PPR3 by wet etching or dry etching. The material layer 180P is formed, and then the photosensitive layer 182 is formed. The photosensitive layer 182 corresponds to the first sensing electrode 172 and is stacked on the first sensing electrode 172 . The sidewall 182w of the photosensitive layer 182 is substantially flush with the sidewall 172w of the first sensing electrode 172 .

In some embodiments, a portion of the patterned photosensitive material layer 180P is removed, and a photosensitive layer 184 may also be formed. The photosensitive layer 184 corresponds to the second signal line 176 and is stacked on the second signal line 176 .

Referring to FIG. 1G , the third photoresist region PPR3 is removed. For example, an ashing process can be used to remove the third photoresist region PPR3 to expose the upper surfaces of the photosensitive layers 182 and 184 .

1H, a first patterned insulating layer PL is formed on the substrate 110, and the first patterned insulating layer PL has a first opening OP1 exposing a part of the photosensitive layer 182 and a first signal line 174 exposing a part the second opening OP2. The method for forming the first patterned insulating layer PL may, for example, utilize physical vapor deposition, chemical vapor deposition, coating, or other suitable methods to form a first insulating material layer (not shown) on the substrate 110, and The interlayer dielectric layer 160 , the first sensing electrode 172 , the first signal line 174 , the second signal line 176 and the photosensitive layers 182 and 184 are covered. Next, through a lithography etching process, the first insulating material layer is patterned to form a first patterned insulating layer PL, wherein the first patterned insulating PL layer has a first opening OP1 and a second opening OP2, and the first patterning The first opening OP1 of the insulating layer PL may expose part of the upper surface of the photosensitive layer 182 , and the second opening OP2 of the first patterned insulating layer PL may expose part of the upper surface of the first signal line 174 . The material of the first patterned insulating layer PL can be an inorganic material (such as silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above-mentioned materials), an organic material (such as a polyimide resin, epoxy resin or acrylic resin) or a combination of the above.

Please continue to refer to FIG. 1H , a third conductive material layer 190 is formed on the first patterned insulating layer PL, and fills the first opening OP1 and the second opening OP2 . For example, by sputtering, the third conductive material layer 190 can be comprehensively formed on the first patterned insulating layer PL and filled into the first opening OP1 and the second opening OP2 of the first patterned insulating layer PL. The material of the third conductive material layer 190 may include metal oxide conductive materials (eg, indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide), other suitable transparent conductive materials, or at least the above The two are stacked layers, but the present invention is not limited to this.

The third conductive material layer 190 can be patterned according to requirements. For example, a part of the third conductive material layer 190 is removed through a lithography etching process to form the second sensing electrodes 192 and the first connection lines 194 . In FIG. 1H, the second sensing electrode 192 is located in the first opening OP1, so that the photosensitive layer 182 is sandwiched between the first sensing electrode 172 and the second sensing electrode 192, wherein the first sensing electrode 172, the light The sensing layer 182 and the second sensing electrode 192 can constitute at least one photosensitive element PS. The first connection line 194 is located in the second opening OP2 and is electrically connected to the second sensing electrode 192 and the first signal line 174 . It should be understood that FIG. 1H only represents a partial cross-sectional schematic diagram of the sensing device 100 , and the third conductive material layer 190 of other parts of the sensing device 100 may also be patterned and partially removed, and the present invention is not limited thereto.

Based on the above, in this embodiment, the photosensitive layer 182 and the first sensing electrode 172 are formed by the same mask MK, so the projected area of the photosensitive layer 182 on the substrate 110 and the first sensing electrode 172 on the substrate The projected area of the sensing device 110 is substantially the same, which reduces the use of a mask and increases the area of the photosensitive layer 182 compared with the conventional process, thereby reducing the manufacturing cost of the sensing device 100 and improving its photosensitive capability.

After the above process, the fabrication of the sensing device 100 of this embodiment can be substantially completed.

FIG. 2 is a schematic top view of a part of the sensing device according to the first embodiment of the present invention. 1H corresponds to the position of the section line A-A' in FIG. 2 , and for clarity, some components in FIG. 1H are omitted in FIG. 2 , and the third conductive material layer 190 is shown in a perspective manner.

Referring to FIG. 1H and FIG. 2 , the sensing device 100 includes a substrate 110 , a patterned semiconductor layer 130 , a first patterned conductive layer 150 , a second patterned conductive layer 170P, a photosensitive layer 182 , and a second sensor layer, which are sequentially stacked. measuring electrode 192 . Some of the patterned semiconductor layers 130 may form at least one channel CH, some of the first patterned conductive layers 150 may form at least one gate G, and some of the second patterned conductive layers 170P may form at least one first sensing electrode 172, a The drain electrode D and a source electrode S, the gate electrode G, the channel CH, the source electrode S and the drain electrode D can constitute the active element T, and the first sensing electrode 172, the photosensitive layer 182 and the second sensing electrode 192 can constitute the light The sensing element PS, wherein the drain electrode D is electrically connected to the first sensing electrode 172 .

In other words, the sensing device 100 at least includes the substrate 110 , the active element T and the photosensitive element PS. The active element T is disposed on the substrate 110 . The active element T is, for example, a thin film transistor, including a gate G, a channel CH, a source S and a drain D. The photosensitive element PS is disposed on the substrate 110 , and the photosensitive element PS includes a first sensing electrode 172 , a second sensing electrode 192 and a photosensitive layer sandwiched between the first sensing electrode 172 and the second sensing electrode 192 182. The drain electrode D can completely overlap the first sensing electrode 172 and be electrically connected to the first sensing electrode 172 . In other words, the first sensing electrode 172 can also be regarded as the drain electrode D of the active element T.

Please continue to refer to FIG. 1H and FIG. 2 , the projected area of the photosensitive layer 182 on the substrate 110 is substantially the same as the projected area of the first sensing electrode 172 on the substrate 110 , and the sidewall 182w of the photosensitive layer 182 is the same as the first sensing electrode The side walls 172w of 172 are cut substantially flush. The aforementioned “substantially aligned” includes that the distance d1 between the sidewall 182w of the photosensitive layer 182 and the sidewall 172w of the first sensing electrode 172 is less than 0.5 micrometer (micrometer; μm). Since the projected area of the photosensitive layer 182 on the substrate 110 is substantially the same as the projected area of the first sensing electrode 172 on the substrate 110 , the sensing device of the present invention has a larger area of light than the conventional sensing device. Therefore, the photosensitive capability of the sensing device can be improved, and the quality of the sensing device can be improved.

In FIGS. 1H and 2 , the sensing device 100 may further include a first signal line 174 and a first connection line 194 . The first signal line 174 can be used for grounding or other signal connections, for example, and is located in the same film layer as the first sensing electrode 172 . The first connection line 194 is electrically connected to the first signal line 174 and the second sensing electrode 192 , so that the first signal line 174 and the second sensing electrode 192 are electrically connected.

In FIGS. 1H and 2 , the sensing device 100 may further include a second signal line 176 . The second signal line 176 is, for example, a data line, which can overlap with the source electrode S and be electrically connected to the source electrode S. In other words, the second signal line 176 can also be regarded as the source electrode S of the active element T. The second signal line 176 and the first sensing electrode 172 are located in the same film layer, and the photosensitive layer 184 can also be disposed on the second signal line 176 , which is not limited in the present invention.

To sum up, by forming the first sensing electrode and the sensing layer under the same mask, the sensing device of the present invention can reduce the use of one mask compared with the conventional process, thereby reducing the size of the sensing device. manufacturing cost. In addition, the sensing device obtained by the manufacturing method of the sensing device of the present invention has a photosensitive layer with a larger area, so the photosensitive capability of the sensing device can be improved, and the quality of the sensing device can be improved.

Although the present invention has been disclosed above by the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.

100: Sensing Device 110: Substrate 120: Buffer Layer 130: Patterned Semiconductor Layers 140: gate insulating layer 150: First patterned conductive layer 160: Interlayer Dielectric Layer 160a, 160b: Dielectric openings 170: Second Conductive Material Layer 170P: Second patterned conductive layer 172: First sensing electrode 172w, 182w: Sidewall 174: First Signal Line 176: Second signal line 180: Photosensitive material layer 180P: Patterned photosensitive material layer 182, 184: Photosensitive layer 190: third conductive material layer 192: Second sensing electrode 194: First Link A-A’: section line CH: channel D: drain d1: distance G: gate MK: photomask OP1: first opening OP2: Second Opening PL: first patterned insulating layer PR: photoresist layer PPR, PPR1, PPR2, PPR3: Patterned photoresist layers PS: Light sensor R1: District 1 R2: Zone 2 S: source T: Active element t1, t2: thickness

1A to 1H are schematic diagrams of a manufacturing process of a sensing device according to a first embodiment of the present invention. FIG. 2 is a schematic top view of a part of the sensing device according to the first embodiment of the present invention.

100: Sensing Device 110: Substrate 120: Buffer Layer 130: Patterned Semiconductor Layers 140: gate insulating layer 150: First patterned conductive layer 160: Interlayer Dielectric Layer 160a, 160b: Dielectric openings 170P: Second patterned conductive layer 172: First sensing electrode 172w, 182w: Sidewall 174: First Signal Line 176: Second signal line 182, 184: Photosensitive layer 190: third conductive material layer 192: Second sensing electrode 194: First Link CH: channel D: drain d1: distance G: gate OP1: first opening OP2: Second Opening PL: first patterned insulating layer PS: Light sensor S: source T: Active element

Claims (8)

A manufacturing method of a sensing device, comprising: providing a substrate; forming a patterned semiconductor layer on the substrate; forming a gate insulating layer on the substrate and covering the patterned semiconductor layer; forming a gate on the gate on the electrode insulating layer; an interlayer dielectric layer is formed on the substrate and covers the gate and the gate insulating layer, and the interlayer dielectric layer has a dielectric opening exposing part of the patterned semiconductor layer forming a second conductive material layer on the interlayer dielectric layer; forming a photosensitive material layer on the second conductive material layer; forming a patterned photoresist layer on the substrate through a photomask, wherein the The patterned photoresist layer includes a first photoresist area and a second photoresist area, the thickness of the first photoresist area is greater than the thickness of the second photoresist area; In the second photoresist region, a part of the photosensitive material layer is removed to form a patterned photosensitive material layer, and a part of the second conductive material layer is removed to form a first sensing electrode and a first signal line , wherein the first sensing electrode corresponds to the first photoresist region, and the first signal line corresponds to the second photoresist region; remove part of the patterned photosensitive material layer to forming a photosensitive layer; and forming a second sensing electrode on the photosensitive layer. The method according to claim 1, further comprising: A first patterned insulating layer is formed on the substrate, and the first patterned insulating layer has a first opening exposing a part of the photosensitive layer and a second opening exposing a part of the first signal line opening; forming a third conductive material layer on the first patterned insulating layer and filling the first opening and the second opening; and removing part of the third conductive material layer to form the The second sensing electrode and the first connecting line, wherein the first connecting line is electrically connected to the second sensing electrode and the first signal line. The method of claim 1, further comprising: after forming the first sensing electrode and the first signal line, reducing the thickness of the first photoresist region to form a third photoresist region; and A portion of the patterned photosensitive material layer is removed from the third photoresist region to form the photosensitive layer. The method of claim 1, further comprising: removing a portion of the second conductive material layer through the patterned photoresist layer to form a second signal line. A sensing device, comprising: a substrate; an active element disposed on the substrate, wherein the active element includes a gate electrode, a channel, a source electrode and a drain electrode; a photosensitive element disposed on the substrate, wherein the active element The photosensitive element includes a first sensing electrode, a second sensing electrode and sandwiched between the first sensing electrode and the second sensing electrode A first photosensitive layer between sensing electrodes, wherein the first sensing electrode is electrically connected to the drain electrode, and the area of the first photosensitive layer is substantially the same as the area of the first sensing electrode The same; the second signal line is electrically connected to the source electrode; and the second photosensitive layer is stacked on the second signal line. The sensing device according to claim 5, wherein the sidewall of the first sensing electrode is substantially flush with the sidewall of the first photosensitive layer. A sensing device, comprising: a substrate; an active element disposed on the substrate, wherein the active element includes a gate electrode, a channel, a source electrode and a drain electrode; a photosensitive element disposed on the substrate, wherein the active element The photosensitive element includes a first sensing electrode, a second sensing electrode, and a first photosensitive layer sandwiched between the first sensing electrode and the second sensing electrode, wherein the drain electrode completely overlaps with The first sensing electrode; the second signal line is electrically connected to the source electrode; and the second photosensitive layer is stacked on the second signal line. The sensing device according to claim 5 or 7, further comprising: a first signal line; and a first connection line electrically connected to the second sensing electrode and the first signal line.

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