TWI759865B - Firing resistor and method of manufacturing the same - Google Patents

Abstract

The present disclosure relates to a firing resistor. The firing resistor includes a substrate, a thermal insulating layer disposed on the substrate, and a conductive layer disposed on the thermal insulating layer. The firing resistor also includes an insulating groove formed in the substrate, the thermal insulating layer, and the conductive layer. The conductive layer has a first conductive part and a second conductive part. The insulating groove separates the first conductive part from the second conductive part. The present disclosure also relates to a method of manufacturing a firing resistor.

Description

Fire resistance and manufacturing method thereof

The present invention relates to a firing resistor and a method for manufacturing the same.

Ignition resistors (also known as electronic starting chips) have the characteristics of rapidly converting electrical energy into heat energy and low ignition energy, so they are often used to initiate ignition reactions in controlled energy reactions, such as bridges used as detonators in explosive devices Silk.

An embodiment of the present disclosure relates to a firing resistor, which includes a substrate, a heat insulating layer disposed on the substrate, a conductive layer disposed on the heat insulating layer, and a thermal resistor formed in the substrate, the heat insulating layer, and the conductive layer Insulation trench. The conductive layer has a first conductive portion and a second conductive portion. The insulating trench separates the first conductive portion and the second conductive portion.

An embodiment of the present disclosure relates to a firing resistor, which includes a substrate, a heat insulating layer disposed on the substrate, and a conductive layer disposed on the heat insulating layer. The conductive layer has insulating trenches. The firing resistor also includes an oxide layer on the sidewall of the insulating trench.

An embodiment of the present disclosure relates to a method for manufacturing a firing resistor, including providing a substrate, forming a heat insulating layer on the substrate, forming a conductive layer on the heat insulating layer, and forming an insulating trench in the conductive layer. An oxide layer is formed on the sidewall of the insulating trench.

1: ignition resistance

10: Substrate

10r: Insulation trench

10rs: Sidewall

11: Insulation layer

11s: Sidewall

12: Electrodes

13: Conductive layer

13a: Conductive part

13b: Conductive part

13s: Sidewall

15: Seed layer

16: Terminal electrode

AA': Tangent

G: Spacing

L: length

W1: width

W2: width

Various aspects of the disclosed embodiments are discussed in the following description with reference to the accompanying drawings, which are not drawn to scale. The technical features in the drawings and the embodiments are marked with element symbols, and these element symbols are used to help understand various aspects of the embodiments of the present disclosure, but do not limit the scope of the invention claimed in the present disclosure. In these drawings: FIG. 1A is a perspective view of a firing resistor according to some embodiments of the present disclosure; FIG. 1B is a partial perspective view of a firing resistor according to some embodiments of the present disclosure; Figure 1D shows a top view of a firing resistor according to some embodiments of the present disclosure; Figure 2A shows a top view of a firing resistor according to some embodiments of the present disclosure; 2B shows a top view of a firing resistor according to some embodiments of the present disclosure; FIG. 2C shows a top view of a firing resistor according to some embodiments of the present disclosure; FIG. 2D shows a firing resistor according to some embodiments of the present disclosure 2E shows a top view of a firing resistor according to some embodiments of the present disclosure; 3A shows a top view of one or more steps in a method for manufacturing a firing resistor according to some embodiments of the present disclosure; FIG. 3B shows one of the methods for producing a firing resistor according to some embodiments of the present disclosure. A side view in one or more steps; FIG. 4A is a top view in one or more steps of a method for manufacturing a firing resistor according to some embodiments of the present disclosure; FIG. 4B is a top view according to some embodiments of the present disclosure The side view of one or more steps in the manufacturing method of the ignition resistor; FIG. 5A is a top view of one or more steps in the manufacturing method of the ignition resistor according to some embodiments of the present disclosure; Shown is a side view of one or more steps in a method of manufacturing a firing resistor according to some embodiments of the present disclosure; FIG. 6A shows one or more steps of a method of manufacturing a firing resistor according to some embodiments of the present disclosure. A top view in multiple steps; FIG. 6B shows a side view in one or more steps of a method of manufacturing a firing resistor according to some embodiments of the present disclosure; FIG. 7A shows a firing according to some embodiments of the present disclosure. A top view of one or more steps in a method of manufacturing a resistor; FIG. 7B is a side view of one or more steps of a method of manufacturing a firing resistor according to some embodiments of the present disclosure; FIG. 8A is a A top view of one or more steps in a method for manufacturing a firing resistor according to some embodiments of the present disclosure; FIG. 8B illustrates a method for producing a firing resistor according to some embodiments of the present disclosure A side view of one or more steps in the method; FIG. 9A is a top view of one or more steps of a method of manufacturing a firing resistor according to some embodiments of the present disclosure; and FIG. 9B is a diagram according to the present disclosure. A side view of one or more steps in a method of manufacturing a firing resistor according to some disclosed embodiments.

Referring to FIGS. 1A to 1D , FIG. 1A is a perspective view of a firing resistor 1 according to some embodiments of the present disclosure. FIG. 1B is a partial perspective view of the ignition resistor 1 of FIG. 1A taken along the tangent line AA′. FIG. 1C is a side view of the ignition resistor 1 of FIG. 1A taken along the tangent line AA'. FIG. 1D is a top view of the firing resistor 1 of FIG. 1A . The ignition resistor 1 includes a substrate 10 , a heat insulating layer 11 , an electrode 12 , a conductive layer 13 , a seed layer 15 , and a terminal electrode 16 .

In some embodiments, the substrate 10 may include, but is not limited to, borophosphosilicate glass (BPSG), undoped silicate glass (USG), silicon, silicon oxide ( Silicon oxide), silicon nitride (silicon nitride), silicon oxynitride (silicon oxynitride), aluminum oxide (aluminium oxide), aluminum nitride (aluminium nitride), polyimide (Polyimide, PI), ABF substrate (Ajinomoto build-up film, ABF), molding compounds, pre-impregnated composite fibers (eg, prepregs), combinations thereof, or the like. Examples of molding compounds may include, but are not limited to, epoxy resins (including fillers dispersed therein). Examples of prepregs may include, but are not limited to, multilayer structures formed by stacking or laminating multiple prepregs and/or sheets. In some embodiments, the substrate 10 may include, but is not limited to, a circuit board (eg, FR4).

The heat insulating layer 11 is provided on the substrate 10 . The thermal insulation layer 11 is located on the substrate 10 and the conductive layer between 13. When viewed from the top view of FIG. 1D , a part of the heat insulating layer 11 is covered by the conductive layer 13 , and a part of the heat insulating layer 11 is exposed from the conductive layer 13 . In some embodiments, the thermal insulating layer 11 may include, but is not limited to, epoxy (including filler dispersed therein), silicon, or other suitable materials. In some embodiments, the thermal insulation layer 11 can block or reduce heat dissipation through the substrate 10 , ensuring that when the current through the firing resistor 1 reaches the rated current, the conductive layer 13 can immediately and surely trigger the firing reaction. In some embodiments, the thermal insulation layer 11 may have a thickness of about 0.1 micrometer (micrometer, μm) to about 40.0 μm. However, the present disclosure is not limited thereto. In some embodiments, the thermal insulating layer 11 may have other thicknesses according to device specifications or process requirements.

The electrodes 12 are disposed on both ends of the two opposite surfaces of the substrate 10 . The electrode 12 is spaced apart from the heat insulating layer 11 by a distance. In some embodiments, disposing four electrodes 12 at both ends of two opposite surfaces of the substrate 10 may omit the step of sputtering the seed layer on the side surfaces of the substrate 10 . However, the present disclosure is not limited thereto. In some embodiments, the thickness of electrode 12 may be between about 1.0 μm and about 10.0 μm. However, the present disclosure is not limited thereto. In some embodiments, the electrodes 12 may be disposed at other positions according to device specifications or process requirements, may have any number, and may have other thicknesses according to device specifications or process requirements. For example, in some embodiments, the electrodes 12 may only be disposed on both ends of one surface of the substrate 10 . In some embodiments, the electrode 12 may be disposed on the heat insulating layer 11 .

The conductive layer 13 is disposed on the heat insulating layer 11 and the electrode 12 . The conductive layer 13 covers the heat insulating layer 11 and the electrode 12 . At least a portion of the conductive layer 13 is exposed to the air. In some embodiments, the conductive layer 13 may include, but is not limited to, copper (Cu), gold (Au), silver (Ag), aluminum (Al), nickel (Ni), titanium (Ti), tungsten (W) , chromium (Cr), tin (Sn), or other metals or alloys. For example, in some embodiments, the alloys may include nickel-chromium alloys (eg, nickel-chromium-aluminum, nickel-chromium-silicon), nickel-copper alloys (eg, nickel-copper-manganese), and the like. In some embodiments, the thickness of the conductive layer 13 may be between about 0.1 μm and about 5.0 μm. However, the present disclosure is not limited thereto. In some embodiments, the conductive layer 13 may be based on device specifications or manufacturing processes Other thicknesses are required.

The conductive layer 13 has a conductive portion 13a and a conductive portion 13b separated or separated from each other. The conductive portion 13a may also be referred to as a non-main line area, and the conductive portion 13b may also be referred to as a main line area. At least a part of the conductive portion 13b is exposed to the air.

The conductive portion 13 a and the conductive portion 13 b are separated from each other by insulating trenches 10 r formed in the substrate 10 , the heat insulating layer 11 , and the conductive layer 13 . The insulating trench 10r is recessed downward from the conductive layer 13 into the substrate 10 and the heat insulating layer 11 . In some embodiments, conductive portion 13a and conductive portion 13b are completely separated from each other. In some embodiments, conductive portion 13a is disconnected from conductive portion 13b. In some embodiments, the insulating trench 10r may surround three sides of the rectangular conductive portion 13a to separate the conductive portion 13a from the conductive portion 13b. In some embodiments, the insulating trench 10r has a distance G between about 10 μm and about 100 μm. In some embodiments, the pitches G of the insulating trenches 10r may be substantially equal pitches.

In some embodiments, the conductive portion 13b has different widths W1 and W2. For example, width W2 is greater than width W1. For example, width W1 is smaller than width W2. The conductive portion 13a is located on both sides of the conductive portion 13b in the direction of the width W1. In some embodiments, the width W1 and the length L of the conductive portion 13b may form the firing area of the firing resistor 1 . In some embodiments, the width W1 of the firing region may be between about 10 μm and about 500 μm. In some embodiments, the length L of the ignition zone may be between about 10 μm and about 1000 μm. In some embodiments, in some embodiments, the ignition region of the conductive layer 13 can cause an ignition reaction in a short time when the on-current is larger than its designed rated current. In some embodiments, since the firing region of conductive layer 13 is exposed to air, the firing region may be used to initiate an ignition reaction.

In some embodiments, the insulating trench 10r has substantially flat sidewalls. As shown in FIG. 1C , the sidewalls 10rs of the substrate 10 , the sidewalls 11s of the heat insulating layer 11 , and the sidewalls of the conductive layer 13 are shown in FIG. 1C . 13s together define the insulating trench 10r. In some embodiments, the sidewalls 10rs of the substrate 10 , the sidewalls 11s of the thermal insulating layer 11 , and the sidewalls 13s of the conductive layer 13 may be substantially coplanar. In some embodiments, the sidewall 10rs of the substrate 10 , the sidewall 11s of the heat insulating layer 11 , and the sidewall 13s of the conductive layer 13 may form a continuous surface.

In some embodiments, the width W1 , the width W2 , the length L, and the distance G can be designed according to device specifications or process requirements, and are not limited to the specific values set forth in the present disclosure. In some embodiments, different patterns of the conductive portion 13b (main circuit area) can be designed according to device specifications or process requirements, such as the patterns shown in FIGS. 2A to 2C (which will be further described below with reference to FIGS. 2A to 2C ). ).

In some embodiments, the conductive layer 13 may not have completely separated main line areas and non-main line areas, such as the patterns shown in FIGS. 2D to 2E (which will be further described with reference to FIGS. 2D to 2E ). For example, the main line area and the non-main line area may be connected via other parts of the conductive layer 13 .

In some embodiments, an oxide layer (not shown in the figures) may be formed on the sidewalls of the insulating trench 10r. For example, an oxide layer may be formed on the sidewalls 13s of the conductive layer 13 . In some embodiments, the oxide layer may completely cover the sidewalls 13s. In some embodiments, an oxide layer may be formed along sidewalls of the insulating trench 10r. In some embodiments, an oxide layer may be formed along the sidewalls of the insulating trench 10r to partially surround the conductive portion 13a. In some embodiments, an oxide layer may be formed along the sidewalls of the insulating trench 10r to partially surround the conductive portion 13b. For example, it can be observed from the top view of FIG. 1D that an oxide layer is formed at the edge of the conductive portion 13a. For example, it can be observed from the top view of FIG. 1D that an oxide layer is formed at the edge of the conductive portion 13b. In some embodiments, the oxide layer may be exposed to air.

The seed layer 15 is disposed on both ends of the substrate 10 and on the conductive layer 13 . in some In an embodiment, the seed layer 15 covers a partial surface of the conductive layer 13 .

The terminal electrodes 16 are disposed on both ends of the substrate 10 and on the seed layer 15 . In some embodiments, the seed layer 15 and the terminal electrode 16 may include (but are not limited to) the materials listed above for the conductive layer 13 , which will not be repeated here.

In some embodiments, a photolithography process may be used to form the main circuit pattern of the conductive layer (eg, the pattern of the conductive portion 13b of FIG. 1A ). For example, a patterned photoresist is formed on the conductive layer (such as the conductive layer 13 in FIG. 1A ) to define the main circuit pattern of the conductive layer, and then the non-main circuit area (such as FIG. 1A ) other than the main circuit pattern is formed. The conductive portion 13a) is etched away, and then the photoresist is removed, leaving the main circuit pattern.

An embodiment of the present disclosure provides a process method (detailed in FIGS. 3A to 9B ), in which the conductive layer 13 is formed by sputtering (eg, vacuum sputtering), and patterned by laser etching conductive layer. By forming the conductive layer 13 by sputtering, the thickness of the conductive layer 13 can be precisely controlled. Forming the conductive layer 13 by sputtering is not limited by the material of the yellow lithography process, so the selectivity of the material is high.

The resistance value of the conductive layer 13 can be dynamically (or instantaneously) adjusted along with the cross-sectional area of the ignition region (eg, the area formed by the width W1 and the length L) during the laser etching process, thereby improving the design flexibility of the conductive layer 13 .

Compared with the yellow light lithography process, the use of laser etching can increase the accuracy of the dimensions of the conductive layer 13 (such as width W1, width W2, length L, spacing G, etc.), improve product stability, and achieve precise control of ignition energy. According to some embodiments of the present disclosure, the size error of the conductive layer 13 is less than or equal to about ±2%.

According to some embodiments of the present disclosure, the firing resistor provided by the present disclosure (eg, firing resistor 1 in FIG. 1A ) can be applied to an explosive device, and a predetermined current is passed into the conductive layer 13 . The flow heats the ignition zone. Since the ignition zone is exposed to air, the heat generated in the ignition zone can initiate an ignition reaction. In some embodiments, the firing resistor 1 can be used in explosive devices with low ignition energy, such as (but not limited to) in armaments, vehicle airbags, detonators, or other ignition circuits. For example, according to some embodiments of the present disclosure, the conductive layer 13 may have a resistance value ranging from about 2 ohms (Ω) to 8 Ω. For example, according to some embodiments of the present disclosure, the firing resistor 1 can be used in an explosive device with a firing energy of about 10 millijoules (mJ) to 20 millijoules. For example, according to some embodiments of the present disclosure, the firing resistor 1 may be used in an explosive device with a rated current of about 5 milliampere (mA) to 6 milliampere. For example, according to some embodiments of the present disclosure, the firing resistor 1 can achieve a firing time of 50 milliseconds (ms) and a fire/all fire ratio of up to 150%.

2A-2C are top views of firing resistors according to some embodiments of the present disclosure. In some embodiments, the conductive layers of the firing resistor 1 shown in FIGS. 1A to 1D can also be replaced with the conductive layers shown in FIGS. 2A to 2C .

Referring to FIG. 2A , which is similar to the top view of the ignition resistor 1 of FIG. 1D , the conductive portion 13 a and the conductive portion 13 b are separated from each other by insulating trenches 10 r formed in the substrate 10 , the heat insulating layer 11 , and the conductive layer 13 . The conductive portion 13a and the conductive portion 13b are completely separated from each other. An oxide layer is formed on the edges of the conductive portion 13a and the conductive portion 13b.

The difference between the top view of the firing resistor 1 in FIG. 2A and FIG. 1D is that the insulating trench 10r in FIG. 2A surrounds the two sides of the rectangular conductive portion 13a to separate the conductive portion 13a from the conductive portion 13b. In some embodiments, the area of the conductive portion 13a of FIG. 2A may be larger than the area of the conductive portion 13a of FIG. ID. In some embodiments, the area of the conductive portion 13b of FIG. 2A may be smaller than the area of the conductive portion 13b of FIG. ID.

Referring to FIG. 2B, FIG. 2B is similar to the top view of the firing resistor 1 of FIG. 1D, and the conduction The portion 13 a and the conductive portion 13 b are separated from each other by insulating trenches 10 r formed in the substrate 10 , the heat insulating layer 11 , and the conductive layer 13 . The conductive portion 13a and the conductive portion 13b are completely separated from each other. An oxide layer is formed on the edges of the conductive portion 13a and the conductive portion 13b.

The difference between FIG. 2B and the top view of the firing resistor 1 in FIG. 1D is that the insulating trench 10r in FIG. 2B surrounds the two sides of the rectangular conductive portion 13a to separate the conductive portion 13a from the conductive portion 13b, and there are four conductive portions in FIG. 2B 13a.

Referring to FIG. 2C , which is similar to the top view of the firing resistor 1 of FIG. 1D , the conductive portion 13 a and the conductive portion 13 b are separated from each other by insulating trenches 10 r formed in the substrate 10 , the heat insulating layer 11 , and the conductive layer 13 . The conductive portion 13a and the conductive portion 13b are completely separated from each other. An oxide layer is formed on the edges of the conductive portion 13a and the conductive portion 13b.

The difference between the top view of the firing resistor 1 in FIG. 2C and FIG. 1D is that the insulating layer 11 in FIG. 2C completely covers the substrate 10 . In some embodiments, the area of the conductive portion 13a of FIG. 2C may be larger than the area of the conductive portion 13a of FIG. ID. In some embodiments, the area of the conductive portion 13b of FIG. 2C may be larger than the area of the conductive portion 13b of FIG. ID.

2D-2G are top views of firing resistors according to some embodiments of the present disclosure. In some embodiments, the conductive layers of the firing resistor 1 shown in FIGS. 1A to 1D can also be replaced with the conductive layers shown in FIGS. 2D to 2G .

FIGS. 2D to 2E are similar to the top views of the firing resistor 1 in FIG. 1D , and the conductive portion 13 a and the conductive portion 13 b are separated from each other by an insulating trench 10 r. An oxide layer is formed on the edges of the conductive portion 13a and the conductive portion 13b.

The difference between the top views of the firing resistor 1 in FIGS. 2D to 2G and FIG. 1D is that the main line area and the non-main line area of the conductive layer 13 in FIGS. 2D to 2G are not completely separated. For example, the conductive layer 13 of FIGS. 2D to 2E has a curved pattern. For example, the conductive layer 13 of FIGS. 2D-2E The various parts are connected to each other. For example, the main line area and the non-main line area of the conductive layer 13 of FIGS. 2D to 2E are connected via other parts of the conductive layer 13 .

3A-9B illustrate a method of manufacturing a firing resistor according to some embodiments of the present disclosure. In some embodiments, FIGS. 3B, 4B, 5B, 6B, 7B, 8B, and 9B are the structures of FIGS. 3A, 4A, 5A, 6A, 7A, 8A, and 9A, respectively. Sectional view of section along tangent AA'. According to some embodiments of the present disclosure, the manufacturing method disclosed in FIGS. 3A to 9B can be used to manufacture the firing resistor 1 shown in FIGS. 1A to 1D . According to some embodiments of the present disclosure, the manufacturing method disclosed in FIGS. 3A to 9B can also be used to manufacture other firing resistors.

3A and 3B, a substrate 10 is provided. In some embodiments, scribe lines may be formed in the substrate 10 by means of laser cutting. In some embodiments, the depth of the scribe lines may account for about 20% to about 60% of the thickness of the substrate 10 .

Referring to FIGS. 4A and 4B , electrodes 12 are formed on the substrate 10 . In some embodiments, the electrodes 12 may be formed by sputtering, electroless plating, plating, printing, or other feasible methods. In some embodiments, as shown in FIG. 4B , the electrodes 12 may be formed on opposite sides of the substrate 10 . In some embodiments, the electrodes 12 may be formed on only one side of the substrate 10 .

Referring to FIGS. 5A and 5B , a heat insulating layer 11 is formed on the substrate 10 . In some embodiments, the thermal insulation layer 11 may be formed by coating, lamination, or other suitable methods. In some embodiments, as shown in FIG. 5A , the insulating layer 11 is separated from the electrode 12 . In some embodiments, the thermal insulating layer 11 may be formed before the electrode 12 . For example, in some embodiments, the steps of FIGS. 5A and 5B may be performed before the steps of FIGS. 4A and 4B. In some embodiments, electrode 12 may be formed over heat insulating layer 11 . In some embodiments, electrodes 12 may contact Thermal insulation layer 11 .

Referring to FIGS. 6A and 6B , a conductive layer 13 is formed on the substrate 10 . The conductive layer 13 covers the heat insulating layer 11 and the electrode 12 . In some embodiments, the conductive layer 13 may be conformally formed on the insulating layer 11 and the electrode 12 . In some embodiments, the conductive layer 13 may be formed by sputtering. In some embodiments, portions of the insulating layer 11 and the electrodes 12 are exposed from the conductive layer 13 . In some embodiments, the insulating layer 11 and the electrodes 12 may be completely covered by the conductive layer 13 .

7A and 7B , insulating trenches 10 r are formed in the substrate 10 , the heat insulating layer 11 , and the conductive layer 13 . In some embodiments, the substrate 10 is exposed through the insulating trench 10r. For example, the insulating trench 10r is recessed from the conductive layer 13 downward to the substrate 10 . In some embodiments, the insulating trench 10r may be formed by removing part of the conductive layer 13 (or the patterned conductive layer 13 ), the heat insulating layer 11 , and the substrate 10 by means of laser etching. In some embodiments, the insulating trench 10r can have substantially flat sidewalls because the laser etching can form a substantially flat cut surface. As shown in FIG. 7B , the sidewall 10rs of the substrate 10 , the sidewall 11s of the heat insulating layer 11 , and the sidewall 13s of the conductive layer 13 may be substantially coplanar. In some embodiments, the sidewall 10rs of the substrate 10 , the sidewall 11s of the heat insulating layer 11 , and the sidewall 13s of the conductive layer 13 may form a continuous surface.

In some embodiments, the thermal energy generated by the removal of the conductive layer 13 by laser etching can oxidize the conductive layer 13 , forming an oxide layer at the edges of the conductive layer 13 . For example, in some embodiments, the oxide layer may include the oxide of conductive layer 13 . In some embodiments, an oxide layer may be formed along sidewalls of the insulating trench 10r.

After the insulating trench 10r is formed, the conductive portion 13a of the conductive layer 13 is separated from the conductive portion 13b.

In some embodiments, in the steps of FIG. 7A and FIG. 7B , the measurement may be performed simultaneously The pattern (or shape) of the conductive layer 13 is adjusted in real time according to the resistance value of the conductive layer 13 . For example, one patterning can be performed first, and then the resistance value of the conductive layer 13 can be measured, and then the pattern of the conductive layer 13 can be fine-tuned according to the measured resistance value, thereby obtaining an accurate resistance value. In some embodiments, the above steps of measuring and fine-tuning the pattern may be repeated multiple times.

In some embodiments, the pattern of the conductive layer 13 can also be formed by dry etching, ion bumping, or other feasible methods. For example, the patterning of the conductive layer 13 by laser etching combined with other possible etching methods is not limited to the methods listed in the present disclosure.

8A and 8B , a seed layer 15 is formed on the conductive layer 13 to cover a portion of the conductive layer 13 . In some embodiments, the seed layer 15 may be formed by sputtering titanium and copper (Ti/Cu) or TiW. In some embodiments, the seed layer 15 may be formed by electroless Ni or Cu plating. In some embodiments, before forming the seed layer 15 , the substrate 10 may be separated into a plurality of individual elements along scribe lines formed by laser scribing to expose the sides of the substrate 10 .

Referring to FIGS. 9A and 9B , terminal electrodes 16 are formed on both ends of the substrate 10 . In some embodiments, the terminal electrodes 16 may be formed by electroplating Ni, Cu, Ag, Au, or other metals. In some embodiments, the terminal electrodes 16 may be formed by electroless plating of Ni, Pb, or other metals. In some embodiments, the terminal electrodes 16 may be formed by printing Cu, Ag, Au, or other metals. In some embodiments, the firing resistor formed by the method shown in FIGS. 3A and 3B to 9A and 9B may be the same as the firing resistor 1 shown in FIG. 1A .

The embodiments of the structures and methods discussed in this disclosure are not limited to the constructions or configurations described and illustrated in the embodiments and accompanying drawings, but can be practiced or carried out in various ways.

Also, the phraseology and terminology used in this disclosure is for the purpose of description and should not be considered a limitation. For example, the wording of the singular or plural is not intended to limit the presently disclosed structures and methods. As used in this disclosure, "includes," "includes," "has," "includes," "involves," etc. encompass the items listed thereafter, their equivalents, and additional items. As used in this disclosure, "or" may be taken to indicate any of the more than one item being described. Front and back, left and right, top and bottom, top and bottom, and vertical and horizontal are intended for ease of description and should not be construed as limiting structures and methods to one location, space, or orientation.

Accordingly, various alterations, modifications, and improvements will occur to those skilled in the art of the present disclosure based on the specific embodiments set forth in this disclosure. Such changes, modifications, and improvements still fall within the scope of this disclosure.

1: ignition resistance 10: Substrate 10r: Insulation trench 11: Insulation layer 13: Conductive layer 13a: Conductive part 13b: Conductive part 15: Seed layer 16: Terminal electrode AA': Tangent G: Spacing L: length W1: width W2: width

Claims (13)

A firing resistor, comprising: a base plate; a heat insulating layer disposed on the base plate; a conduction layer disposed on the heat insulating layer, wherein the conduction layer has a first conducting part and a second conducting part; and an insulating layer A trench is formed in the substrate, the insulating layer, and the conductive layer, and the insulating trench separates the first conductive portion and the second conductive portion. The firing resistor of claim 1, wherein the insulating trench has a substantially flat sidewall. The ignition resistor of claim 1, further comprising: a first oxide layer on a sidewall of the first conductive portion. The firing resistor of claim 3, wherein the first oxide layer completely covers the sidewall of the first conductive portion. The firing resistor of claim 1, further comprising: a second oxide layer on a sidewall of the second conductive portion. The firing resistor of claim 5, wherein the second oxide layer completely covers the second the side wall of the conductive portion. The ignition resistor of claim 1, wherein the conductive layer is exposed to air. The ignition resistor of claim 1, wherein the first conductive portion has a first width and a second width, wherein the first width is different from the second width. The ignition resistor of claim 1, wherein the second conductive portion and the first conductive portion are connected to each other via a third conductive portion of the conductive layer. A ignition resistor, comprising: a substrate; a thermal insulation layer, arranged on the substrate; a conduction layer, arranged on the thermal insulation layer, wherein the conduction layer has an insulating groove; and an oxide layer, located in the insulating groove on a side wall; wherein the insulating trench is recessed from the conductive layer downward to the substrate. The firing resistor of claim 10, wherein the conductive layer is exposed to air. A method for manufacturing a firing resistor, comprising: providing a substrate; forming a thermal insulation layer on the substrate; forming a conductive layer on the thermal insulation layer; and An insulating trench is formed in the conductive layer and recessed downward to the substrate, wherein an oxide layer is formed on a sidewall of the insulating trench. The method for manufacturing a firing resistor as claimed in claim 12, wherein forming the insulating trench in the conductive layer to be recessed down to the substrate comprises performing a laser etching operation.

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