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TWI756555B - An alignment device for semiconductor wafer inspection - Google Patents

An alignment device for semiconductor wafer inspection Download PDF

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Publication number
TWI756555B
TWI756555B TW108127450A TW108127450A TWI756555B TW I756555 B TWI756555 B TW I756555B TW 108127450 A TW108127450 A TW 108127450A TW 108127450 A TW108127450 A TW 108127450A TW I756555 B TWI756555 B TW I756555B
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light source
sample
image capture
source device
wafer
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TW108127450A
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TW202107060A (en
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魏汝超
孫泰炎
羅仁昱
陳東林
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超能高新材料股份有限公司
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Abstract

The device of the invention is mainly to resolve the angle deviation problem during the inspection of the wafer. Through the present invention, it can greatly improve the efficiency of wafer inspection.

Description

一種晶圓缺陷檢測對位裝置 A wafer defect detection and alignment device

本發明之裝置主要在於改善晶圓檢測過程中,角度偏差問題。透過本發明所揭露之角度旋轉裝置,能達到大幅提升改善先前技術運作效率之目的。 The device of the present invention mainly aims to improve the angle deviation problem in the wafer inspection process. Through the angle rotating device disclosed in the present invention, the purpose of greatly improving the operation efficiency of the prior art can be achieved.

先前技術中,晶圓樣品檢測時放置如圖1,檢測晶圓為100,其中101為光軸中心,光源、取像裝置之中心點均預設位於此軸線上,樣品擺放角度102與視野範圍移動方向103存在一θ角度誤差104,在拍攝過程中,影像成像範圍隨移動方向移動時,角度誤差較小者可透過軟體進行結果的修正,若嚴重時則會遇到取像樣品位於視野範圍外105的狀況,若發生此問題時必須配合使用與另一垂直方向修正克服,如此會耗費額外時間降低檢測效率。當放大倍率需求不斷提升,可視範圍不斷縮小的狀況下,影響操作效率問題就會更加顯著。 In the prior art, the wafer sample is placed as shown in Figure 1 for inspection. The inspection wafer is 100, of which 101 is the center of the optical axis. The center point of the light source and the imaging device are preset on this axis. The sample placement angle 102 and the field of view There is a θ angle error 104 in the range moving direction 103. During the shooting process, when the image imaging range moves with the moving direction, the angle error can be corrected through the software if the angle error is small. If the situation outside the range 105 occurs, it must be used together with another vertical correction to overcome this problem, which will consume extra time and reduce the detection efficiency. When the demand for magnification continues to increase and the visual range continues to shrink, the problem of affecting operational efficiency will become more significant.

為克服晶圓擺放角度誤差,專利WO2009011417A1透過一種外部檢查裝置,能預先對平板樣品進行旋轉,在被檢查物旋轉一周的期間,拍攝被檢查物複數個位置,透過拍攝結果進行運算,可得知該被檢查物與攝影裝置的相對位置,後續再透過設備之取放過程,針對此檢查裝置求出的相對位置進行修正;但取放過程,存在不可預期之機械誤差而導致對位精度不足問題依舊存在。 In order to overcome the wafer placement angle error, the patent WO2009011417A1 uses an external inspection device to rotate the flat sample in advance. During the rotation of the object to be inspected, multiple positions of the object to be inspected are photographed. Know the relative position of the object to be inspected and the photographing device, and then correct the relative position obtained by the inspection device through the subsequent picking and placing process of the equipment; however, there are unpredictable mechanical errors in the picking and placing process, resulting in insufficient alignment accuracy The problem still exists.

專利CN103811387A公開一種晶圓預對準的方法及裝置,該裝置內包含角度調整機構,角度調整機構直接驅動晶圓旋轉或平移,以帶動晶圓至需求的測試位置;此方法透過直接驅動方式修正角度,克服修正後的取放動作可能導致角度誤差,但在此角度調整機構中,平移組件需攜帶旋轉組件移動,故在平移組件不斷移動的拍攝條件下,平移組件必需承受旋轉組件的重力加速度,而使整體運作發生晃動不利於穩定拍攝。 Patent CN103811387A discloses a method and device for wafer pre-alignment. The device includes an angle adjustment mechanism, and the angle adjustment mechanism directly drives the wafer to rotate or translate to drive the wafer to a desired test position; this method is corrected by direct drive Angle, overcoming the corrected pick and place action may lead to angle error, but in this angle adjustment mechanism, the translation component needs to carry the rotating component to move, so under the shooting conditions where the translation component is constantly moving, the translation component must withstand the gravitational acceleration of the rotating component , and shaking the overall operation is not conducive to stable shooting.

因此,本發明揭露一角度旋轉裝置,能使樣品沿光軸中心104進行旋轉,待測樣品直接於光學檢測區域內完成對位,完成動作後即固定於樣品載台上不再移動,解決先前技術中,存在取放誤差,或是機構龐大,運作中容易產生晃動問題;其架構及實施方式如下。 Therefore, the present invention discloses an angle rotation device, which can make the sample rotate along the center of the optical axis 104, the sample to be tested is directly aligned in the optical detection area, and is fixed on the sample stage and does not move after the operation is completed. In the technology, there is a pick-and-place error, or the mechanism is huge, and the problem of shaking is easy to occur during operation; the structure and implementation are as follows.

本發明之裝置主要在於改善晶圓檢測過程中,角度偏差問題。透過本發明所揭露之角度旋轉裝置,能達到大幅提升改善先前技術運作效率之目的。 The device of the present invention mainly aims to improve the angle deviation problem in the wafer inspection process. Through the angle rotating device disclosed in the present invention, the purpose of greatly improving the operation efficiency of the prior art can be achieved.

為達成上述目標,本發明提供一檢測裝置,此檢測裝置主要包括光源裝置、影像擷取裝置、角度旋轉裝置、檢測平台與運動機構,上述光源裝置照射區域為直徑1-400mm之區域;影像擷取裝置用以取得穿透之影像資訊;角度旋轉裝置能頂起樣品並旋轉。角度旋轉裝置內部設計有容納光源裝置或影像擷取裝置的空間,其動作方式可為內部裝置同時進行頂升動作,或內部裝置獨立執行移動動作;檢測平台用以乘載待測樣品取得不同位置之影像;透過上述裝置之組合,最終取像結果能取得具有穿透之影像資訊。 In order to achieve the above objectives, the present invention provides a detection device, the detection device mainly includes a light source device, an image capture device, an angle rotation device, a detection platform and a motion mechanism, and the illumination area of the light source device is an area with a diameter of 1-400mm; The pick-up device is used to obtain the penetrating image information; the angle rotation device can lift the sample and rotate. The interior of the angle rotating device is designed with a space for accommodating the light source device or the image capture device. The operation mode can be that the internal device can simultaneously lift up, or the internal device can move independently; the detection platform is used to carry the sample to be tested to obtain different positions. Through the combination of the above devices, the final image acquisition result can obtain image information with penetration.

有別於先前技術,本發明之角度旋轉裝置位於檢測區域內,有別於先前技術利用外部定位裝置,定位完成後再移動至檢測區域內,且角度旋轉裝置並未與樣品固定且同步進行移動,角度修正過程會先將角度旋轉裝置向上頂升,頂起樣品進行修正角度後放下,放置於檢測平台的平面,此檢測平台的平面維持良好的水平,能夠確保相對位置未有位移,再藉由運動機構達成不同取像位置的移動;更進一步說明,因為光源裝置與影像擷取裝置保持於同一軸線,並未有相對位移,不同位置的取像仰賴運動機構移動此軸線或移動檢測平台達成,故能降低移動部件的動量並降低晃動;又本發明與光源裝置並未與檢測平台結合,運動機構不需同時負載光源裝置及檢測平台,故能夠同時具備取得穿透影像及減輕晃動的特性,尤其以運動機構僅移動檢測平台為最佳方式。 Different from the prior art, the angle rotating device of the present invention is located in the detection area, and is different from the prior art using an external positioning device, which is then moved to the detection area after the positioning is completed, and the angle rotating device is not fixed with the sample and moves synchronously. , the angle correction process will first lift the angle rotating device upward, lift the sample to correct the angle, then put it down, and place it on the plane of the detection platform. The movement of different image capturing positions is achieved by the motion mechanism; further explained, because the light source device and the image capture device are maintained on the same axis, there is no relative displacement, the image capturing of different positions is achieved by moving the axis or moving the detection platform by the motion mechanism. Therefore, the momentum of the moving parts can be reduced and the shaking can be reduced; in addition, the present invention and the light source device are not combined with the detection platform, and the motion mechanism does not need to load the light source device and the detection platform at the same time, so it can simultaneously obtain penetrating images and reduce shaking. , especially if the motion mechanism only moves the detection platform as the best way.

本發明之中光源裝置所使用之波長,需與晶圓基材配合,若基板材質為矽或砷化鎵,則波長選用範圍則可以為800-1700nm;氮化鎵或氧化鋁基板之波長選用範圍可以為200-1100nm;碳化矽基板之波長選用範圍可以為100-1000nm。 The wavelength used by the light source device in the present invention needs to be matched with the wafer substrate. If the substrate material is silicon or gallium arsenide, the wavelength selection range can be 800-1700 nm; the wavelength of gallium nitride or aluminum oxide substrate is selected The range can be 200-1100nm; the wavelength selection range of the silicon carbide substrate can be 100-1000nm.

又本發明中光源裝置之位置可位於待測樣品的上方或下方。 In addition, in the present invention, the position of the light source device can be located above or below the sample to be tested.

又本發明中影像擷取裝置可位於待測樣品的上方或下方,但相對於光源裝置的另一側,並與光源裝置相對位置固定,維持固定軸線上且未有相對的移動。 In the present invention, the image capture device can be located above or below the sample to be tested, but relative to the other side of the light source device, and the relative position to the light source device is fixed, maintaining a fixed axis and no relative movement.

又本發明中檢測平台為可透光設計。 In addition, the detection platform in the present invention is designed to be transparent.

為讓上述目的、技術特徵和優點能更淺顯易懂,下文以較佳實施例配合圖式進行詳細說明。 In order to make the above objects, technical features and advantages easier to understand, the following detailed descriptions are given with reference to the preferred embodiments in conjunction with the drawings.

100:檢測晶圓 100: Inspect the wafer

101:光軸中心 101: Optical axis center

102:樣品擺放角度 102: Sample placement angle

103:視野範圍移動方向 103: The direction of movement of the field of view

104:θ角度誤差 104: θ angle error

105:取像樣品位於視野範圍外 105: The sample taken is outside the field of view

200:晶圓缺陷檢測裝置 200: Wafer Defect Inspection Device

201:光源裝置 201: Light source installation

202:角度旋轉裝置 202: Angle Rotation Device

203:影像擷取裝置 203: Image capture device

204:樣品承載平台 204: Sample carrying platform

205:運動裝置 205: Sports Equipment

206:光軸中心 206: Optical axis center

301:角度旋轉裝置頂升氣缸 301: The angle rotation device lifts the cylinder

302:光源裝置頂升氣缸 302: The light source device lifts the cylinder

400:晶圓缺陷檢測裝置 400: Wafer Defect Inspection Device

401:光源裝置 401: Light source device

402:角度旋轉裝置 402: Angle Rotation Device

403:影像擷取裝置 403: Image capture device

404:樣品承載平台 404: Sample carrying platform

405:運動裝置 405: Sports Equipment

501:角度旋轉裝置頂升氣缸 501: The angle rotation device lifts the cylinder

502:影像擷取裝置頂升Z軸 502: The image capture device lifts the Z axis

圖1為晶圓缺陷檢測之角度誤差示意圖 Figure 1 is a schematic diagram of the angle error of wafer defect detection

圖2為晶圓缺陷檢測裝置示意圖 FIG. 2 is a schematic diagram of a wafer defect detection device.

圖3為角度旋轉機構之另一細部設計 Figure 3 is another detailed design of the angle rotation mechanism

圖4為晶圓缺陷檢測裝置另一示意圖 FIG. 4 is another schematic diagram of the wafer defect detection device

圖5為角度旋轉機構之另一細部設計 Figure 5 is another detailed design of the angle rotation mechanism

本發明揭示一種晶圓缺陷檢測裝置,以下將配合圖示說明本發明的具體實施方式,請參閱圖2:本發明晶圓缺陷檢測裝置200之中,包含光源裝置為201、角度旋轉裝置202、影像擷取裝置203、承載平台204與運動機構205,其中光源裝置201與影像擷取裝置203之中心連線為光軸中心206,被測樣品基材為矽(Si)。 The present invention discloses a wafer defect detection device. The specific embodiments of the present invention will be described below in conjunction with the drawings. Please refer to FIG. 2: The wafer defect detection device 200 of the present invention includes a light source device 201, an angle rotation device 202, The image capturing device 203 , the supporting platform 204 and the motion mechanism 205 , wherein the center line connecting the light source device 201 and the image capturing device 203 is the center of the optical axis 206 , and the substrate of the sample to be tested is silicon (Si).

光源裝置201選用之波長為800-1700nm且照射範圍直徑為10mm,且光源裝置201固定於角度旋轉裝置202內;參考圖1運算方式求得樣品擺放存在θ角度誤差104,角度旋轉裝置202主要動作為向上頂升承載平台204後,旋轉承載平台204以將固定其上之待測樣品轉至正確檢測角度,且內部固定有光源裝置201,執行頂升或旋轉動作時帶動光源裝置201一同動作;角度旋轉機構之細部設計亦可為圖3所示,角度旋轉裝置202與光源裝置201能單獨透過氣缸301與302頂升,如此能更精準控制光源高度位置;影像擷取裝置203為CCD與鏡筒加以組合構成,其影像擷取裝置203固定於機構件上,對光源裝置201無任何相對位置之移動;使用時將待測樣品 固定於承載平台204上方,且能夠讓光源裝置201所提供之光源穿透,而運動裝置205可為XY移動平台,帶動承載平台204達成獨立進行XY方向運動。 The wavelength of the light source device 201 is 800-1700nm and the diameter of the irradiation range is 10mm, and the light source device 201 is fixed in the angle rotation device 202; with reference to the calculation method in FIG. After the action is to lift the carrying platform 204 upward, the carrying platform 204 is rotated to turn the sample to be tested fixed on it to the correct detection angle, and the light source device 201 is fixed inside, and the light source device 201 is driven to move together when the lifting or rotating action is performed. ; The detailed design of the angle rotation mechanism can also be as shown in FIG. 3. The angle rotation device 202 and the light source device 201 can be lifted independently through the cylinders 301 and 302, so that the height position of the light source can be controlled more accurately; the image capture device 203 is a CCD and The lens barrel is assembled and formed, and the image capture device 203 is fixed on the mechanical component without any relative position movement to the light source device 201; when using, the sample to be tested is It is fixed above the carrying platform 204 and can allow the light source provided by the light source device 201 to penetrate, and the moving device 205 can be an XY moving platform to drive the carrying platform 204 to independently move in the XY direction.

透過以上裝置之組合,角度旋轉裝置202中具有容納光源裝置201之空間,如此設計才能使800-1700nm波長光源穿透晶圓基材,取得晶圓內部的穿透影像或晶圓經過切割的基材邊緣狀況,最終成像結果可透過灰階變化得知異常位置,同時有別於先前技術DE102016101452B4之設計,本實施例承載平台204與光源裝置201並非相結合之運動裝置,如此能夠改善晃動問題,並且角度旋轉裝置202能於檢測範圍中將承載平台204及其上之樣品頂起,修正角度後下降至原本檢測範圍中,改善樣品擺放角度誤差問題;而10mm光源位置與影像擷取裝置固定光軸中心206,則能以穩定的光源進行分析,具有多項進步性。 Through the combination of the above devices, the angle rotating device 202 has a space for accommodating the light source device 201, so that the 800-1700nm wavelength light source can penetrate the wafer substrate, and obtain the penetrating image inside the wafer or the substrate after the wafer is cut. According to the condition of the edge of the material, the final imaging result can know the abnormal position through the gray scale change. At the same time, it is different from the design of the prior art DE102016101452B4. The supporting platform 204 and the light source device 201 in this embodiment are not combined motion devices, which can improve the shaking problem. In addition, the angle rotation device 202 can lift the supporting platform 204 and the sample on it in the detection range, and then lower the angle to the original detection range after correcting the angle, so as to improve the error problem of the placement angle of the sample; and the position of the 10mm light source is fixed to the image capture device The optical axis center 206 can be analyzed with a stable light source, which has many advancements.

另一方面,本實施例之另一實施例可以為圖4所示,用以檢測砷化鎵(GaAs)晶圓,本發明晶圓缺陷檢測裝置400中,包含光源裝置401、角度旋轉裝置402、影像擷取裝置403、承載平台404與運動機構405。 On the other hand, another embodiment of this embodiment may be shown in FIG. 4 , which is used to inspect gallium arsenide (GaAs) wafers. The wafer defect inspection device 400 of the present invention includes a light source device 401 and an angle rotation device 402 , an image capture device 403 , a carrying platform 404 and a motion mechanism 405 .

光源裝置401選用之波長為800-1700nm且照射範圍直徑為20mm,角度旋轉裝置402主要動作為旋轉承載平台404及其上待測樣品,且內部空間有影像擷取裝置403,而影像擷取裝置403可以使用顯微鏡組與相機結合,並將成像結果以數位方式傳輸,並且擷取裝置403與光源裝置401位於同一軸線上,但透過運動裝置405可同時移動光源裝置401與擷取裝置403,將軸線移動至不同檢測位置,檢測樣品固定於承載平台404上,且樣品相對位置維持在光源裝置401與擷取裝置403之間;又角度旋轉裝置402細部設計亦可以為圖5所示,角度旋轉裝置402與影像擷取裝置403能單獨透過 氣缸501與Z軸502頂升,如此能更精準控制影像擷取裝置403位置;。 The wavelength of the light source device 401 is 800-1700 nm and the diameter of the irradiation range is 20 mm. The angle rotation device 402 is mainly used to rotate the carrying platform 404 and the sample to be tested on it, and there is an image capturing device 403 in the inner space. 403 can use a microscope group combined with a camera, and digitally transmit the imaging results, and the capture device 403 and the light source device 401 are located on the same axis, but the light source device 401 and the capture device 403 can be moved simultaneously through the movement device 405, so that the The axis is moved to different detection positions, the detection sample is fixed on the bearing platform 404, and the relative position of the sample is maintained between the light source device 401 and the capture device 403; and the detailed design of the angle rotation device 402 can also be as shown in FIG. 5, the angle rotation The device 402 and the image capture device 403 can pass through independently The air cylinder 501 and the Z axis 502 are lifted up, so that the position of the image capturing device 403 can be controlled more precisely;

透過以上裝置之組合,光源裝置401位置不同於實施例一,但能參考圖1方式計算出樣品擺放存在θ角度誤差104,透過角度旋轉裝置402將角度修正至0.5度以內,達成本發明之目的;同時檢測樣品位於光源裝置401與影像擷取裝置403之間,且光源裝置401與影像擷取裝403安裝於相對固定之軸線上,並未有任何相對位移,運動裝置405同時移動上述軸線至不同位置,可取得穿透資訊之影像,並且不同位置均使用相同穩定光源,改善灰階誤差問題。 Through the combination of the above devices, the position of the light source device 401 is different from that of the first embodiment, but the θ angle error 104 in the sample placement can be calculated with reference to FIG. Purpose: at the same time, the detection sample is located between the light source device 401 and the image capture device 403, and the light source device 401 and the image capture device 403 are installed on a relatively fixed axis without any relative displacement, and the motion device 405 moves the above axis at the same time To different positions, images of penetrating information can be obtained, and the same stable light source is used in different positions to improve the grayscale error problem.

上述實施例僅用來舉例本發明之實施態樣,以及闡釋本發明之技術特徵,並非用來限制本發明之保護範疇。任何熟悉此技術者可輕易完成之改變或均等性之安排均屬於本發明所主張之範圍,本發明之權利保護範圍應以申請專利範圍為準。 The above-mentioned embodiments are only used to illustrate the embodiments of the present invention and to illustrate the technical characteristics of the present invention, and are not intended to limit the protection scope of the present invention. Any changes or equality arrangements that can be easily accomplished by those skilled in the art fall within the claimed scope of the present invention, and the scope of protection of the present invention should be subject to the scope of the patent application.

200:晶圓缺陷檢測裝置 200: Wafer Defect Inspection Device

201:光源裝置 201: Light source installation

202:角度旋轉裝置 202: Angle Rotation Device

203:影像擷取裝置 203: Image capture device

204:樣品承載平台 204: Sample carrying platform

205:運動裝置 205: Sports Equipment

206:光軸中心 206: Optical axis center

Claims (5)

一種晶圓缺陷檢測裝置,能取得同時具有表面及穿透之影像資訊之檢測裝置,該晶圓缺陷檢測裝置包含:一光源裝置,照射待測樣品區域為1-400mm直徑之區域;一影像擷取裝置,用以取得待測樣品之穿透及表面資訊影像;一角度旋轉裝置,用以頂起樣品並旋轉,且角度旋轉裝置中有容納光源裝置或影像擷取裝置的空間,容納於其中的光源或影像擷取裝置,可同時或分開與角度旋轉裝置進行升降或旋轉移動;一檢測平台,用於承載待測樣品;一運動機構,用以移動檢測平台或同時移動光源與影像擷取裝置。 A wafer defect detection device capable of obtaining both surface and penetrating image information, the wafer defect detection device comprises: a light source device that illuminates a sample area to be tested with a diameter of 1-400mm; an image capture device an acquisition device, used to obtain the penetration and surface information images of the sample to be tested; an angle rotation device, used to lift the sample and rotate, and the angle rotation device has a space for accommodating the light source device or the image capture device, which is accommodated therein The light source or image capture device can be lifted or rotated simultaneously or separately with the angle rotation device; a detection platform is used to carry the sample to be tested; a motion mechanism is used to move the detection platform or move the light source and image capture at the same time device. 如請求項1所述之晶圓缺陷檢測裝置,其中光源裝置之波長需與晶圓基材配合,若基板材質為矽或砷化鎵,則波長選用範圍則可以為800-1700nm;氮化鎵或氧化鋁基板之波長選用範圍可以為200-1100nm;碳化矽基板之波長選用範圍可以為100-1000nm。 The wafer defect detection device according to claim 1, wherein the wavelength of the light source device needs to be matched with the wafer substrate. If the substrate material is silicon or gallium arsenide, the wavelength selection range can be 800-1700 nm; gallium nitride Or the wavelength selection range of alumina substrate can be 200-1100nm; the wavelength selection range of silicon carbide substrate can be 100-1000nm. 如請求項1所述之晶圓缺陷檢測裝置,其中光源裝置之位置可位於樣品的上方或下方。 The wafer defect inspection device according to claim 1, wherein the position of the light source device can be located above or below the sample. 如請求項1所述之晶圓缺陷檢測裝置,其中影像擷取裝置位於光源裝置另一側,且與光源裝置相對位置固定,未有相對位置的水平方向移動。 The wafer defect inspection device according to claim 1, wherein the image capture device is located on the other side of the light source device, and the relative position of the image capture device and the light source device is fixed, and there is no horizontal movement of the relative position. 如請求項1所述之晶圓缺陷檢測裝置,其中檢測平台為可透光設計。 The wafer defect inspection apparatus according to claim 1, wherein the inspection platform is designed to be transparent.
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