TWI753526B - Voltage control - Google Patents
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
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- H—ELECTRICITY
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
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- H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
- H03F3/185—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only with field-effect devices
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- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
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- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
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- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
- H03K3/356182—Bistable circuits using complementary field-effect transistors with additional means for controlling the main nodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/03—Indexing scheme relating to amplifiers the amplifier being designed for audio applications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
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Abstract
Description
本揭示內容之代表性實施例之領域係關於與控制電壓有關或相關且尤其與控制用於音訊驅動電路系統之電壓以避免電壓應力之風險有關或相關的方法、設備及/或實施方案。 The field of representative embodiments of the present disclosure pertains to methods, apparatus, and/or implementations related to or related to controlling voltages, and in particular, controlling voltages for audio driving circuitry to avoid the risk of voltage stress.
許多電子裝置能夠將音訊驅動信號提供至音訊輸出換能器,例如擴音器。在一些情況下,電子裝置可能能夠將音訊驅動信號提供至配件或周邊設備,例如一組頭戴式耳機或耳塞或其類似者,在使用中,該配件或周邊設備可經由某一有線連接可移除地連接至該電子裝置。舉例而言,許多電子裝置可具有用於收納配件設備之對應配合插頭的插座或插槽,諸如3.5mm插口。電子裝置之音訊驅動電路系統,例如音訊編解碼器,可在連接時可操作以提供類比音訊驅動信號來驅動配件設備之擴音器。 Many electronic devices are capable of providing audio drive signals to audio output transducers, such as loudspeakers. In some cases, the electronic device may be able to provide an audio drive signal to an accessory or peripheral, such as a set of headphones or earbuds or the like, which in use may be available via some wired connection Removably connected to the electronic device. For example, many electronic devices may have sockets or sockets, such as 3.5mm sockets, for receiving corresponding mating plugs of accessory equipment. Audio drive circuitry of an electronic device, such as an audio codec, may be operable when connected to provide an analog audio drive signal to drive an accessory device's loudspeaker.
存在各種各樣的可在使用中連接至此類電子裝置之不同音訊配件設備,且至少一些音訊配件設備可表示相對高阻抗負載。舉例而言,對於DC,一些頭戴式耳機配件可具有大約數百歐姆之負載阻抗。 There are a wide variety of different audio accessory devices that can be connected in use to such electronic devices, and at least some audio accessory devices can represent relatively high impedance loads. For example, for DC, some headphone accessories may have load impedances on the order of hundreds of ohms.
為了驅動呈現相對高阻抗負載之音訊配件,可能需要使音訊驅動電路系統能夠產生相對高功率、大振幅驅動信號。詳言之,相比於例如編解碼器或頭戴式耳機放大器電路或其類似者之此類音訊驅動電路系統 的習知情況,可能需要產生具有較大振幅之驅動信號。然而,此類大振幅驅動信號會導致橫越音訊驅動電路系統之組件的電壓應力大於常見的電壓應力。 In order to drive audio accessories that present relatively high impedance loads, it may be necessary to enable the audio driver circuitry to generate relatively high power, large amplitude drive signals. In particular, compared to such audio driver circuits such as codec or headphone amplifier circuits or the like In the conventional case, it may be necessary to generate a driving signal with a larger amplitude. However, such large amplitude drive signals can result in greater than typical voltage stress across components of the audio drive circuitry.
本揭示內容之實施例係關於用於電壓控制之方法、設備及系統,且尤其係關於產生及維持用於音訊驅動電路系統之合適控制電壓。 Embodiments of the present disclosure relate to methods, apparatus, and systems for voltage control, and in particular, to generating and maintaining suitable control voltages for audio driving circuitry.
根據本揭示內容之一態樣,提供一種音訊驅動電路,其包含:一第一電晶體,其具有一閘極-源極電壓容限;及一電力供應模組,其經組態以產生用於該音訊驅動電路之至少一第一供應電壓,其中該音訊驅動電路可在一第一模式下操作,在該第一模式下,該第一供應電壓具有一第一量值,使得在使用中該第一電晶體之一源極端子處之一電壓量值可超過該第一電晶體之該閘極-源極電壓容限。一電壓產生器經組態以在該第一模式下將一第一中間電壓輸出至一中間電壓路徑以用作至少該第一電晶體之一閘極控制電壓,該第一中間電壓具有低於該第一量值之一量值,以便在施加至該第一電晶體之閘極時將該第一電晶體之閘極-源極電壓之量值維持為低於該容限。該音訊驅動電路亦包含一中間路徑電壓箝位器,其用於將該中間電壓路徑選擇性地電壓箝位至一電壓位準,以便將該第一電晶體之該閘極-源極電壓之該量值維持為低於該容限,其中該電壓箝位器由用於該音訊驅動電路之一重設條件啟用。 According to one aspect of the present disclosure, there is provided an audio driving circuit comprising: a first transistor having a gate-source voltage tolerance; and a power supply module configured to generate a voltage at least a first supply voltage at the audio driver circuit, wherein the audio driver circuit is operable in a first mode in which the first supply voltage has a first magnitude such that in use A voltage magnitude at a source terminal of the first transistor may exceed the gate-source voltage tolerance of the first transistor. A voltage generator is configured to output a first intermediate voltage to an intermediate voltage path for use as a gate control voltage of at least the first transistor in the first mode, the first intermediate voltage having a value lower than A magnitude of the first magnitude to maintain the magnitude of the gate-source voltage of the first transistor below the tolerance when applied to the gate of the first transistor. The audio driver circuit also includes an intermediate path voltage clamp for selectively voltage clamping the intermediate voltage path to a voltage level so that the gate-source voltage of the first transistor varies between the gate-source voltages. The magnitude remains below the tolerance with the voltage clamp enabled by a reset condition for the audio driver circuit.
該重設條件可包含一硬體重設之起始,在該硬體重設期間,用於該音訊驅動電路之數位控制之一個或多個外部產生之時脈不可用。 The reset condition may include the initiation of a hardware reset during which one or more externally generated clocks for digital control of the audio driver circuit are unavailable.
該音訊驅動電路亦可包含經組態以回應於該重設條件而啟用該第一中間路徑電壓箝位器之操作的箝位器啟用電路系統。該箝位器啟 用電路系統可經組態以接收一電力供應,該電力供應不同於用於該電力供應模組之輸入電壓並在由該重設條件起始之一重設期間保持可用。在一些實例中,該箝位器啟用電路系統可經組態以自一主機裝置之一電池接收一電池電壓作為該電力供應。該箝位器啟用電路系統可包含經組態以調節該電池電壓之一電壓調節器。在一些實例中,該箝位器啟用電路系統可包含一重設模組,該重設模組經組態以監測該重設條件,並回應於偵測到該重設條件而產生一重設控制信號以啟用該中間路徑電壓箝位器。 The audio driver circuit may also include clamp enable circuitry configured to enable operation of the first mid-path voltage clamp in response to the reset condition. The clamp enables The use circuitry can be configured to receive a power supply that is different from the input voltage for the power supply module and remains available during a reset initiated by the reset condition. In some examples, the clamp enable circuitry can be configured to receive a battery voltage from a battery of a host device as the power supply. The clamp enable circuitry may include a voltage regulator configured to regulate the battery voltage. In some examples, the clamp enable circuitry can include a reset module configured to monitor the reset condition and generate a reset control signal in response to detecting the reset condition to enable this mid-path voltage clamp.
在一些實例中,該中間路徑電壓箝位器可包含多個二極體及一箝位器啟用電晶體之一串聯連接,該多個二極體及該箝位器啟用電晶體串聯組態於接收該第一供應電壓之一節點與該中間電壓路徑之一節點之間。該箝位器啟用電路系統可包含一電壓選擇器,該電壓選擇器經組態以接收該重設控制信號、該第一供應電壓及該第一中間電壓,並基於該重設控制信號選擇性地輸出基於該第一供應電壓或該第一中間電壓之一輸出電壓作為用於該中間路徑電壓箝位器之該箝位器啟用電晶體之一閘極控制信號。 In some examples, the mid-path voltage clamp can include a series connection of a plurality of diodes and a clamp enable transistor, the plurality of diodes and the clamp enable transistor being configured in series at Between a node receiving the first supply voltage and a node of the intermediate voltage path. The clamp enable circuitry can include a voltage selector configured to receive the reset control signal, the first supply voltage, and the first intermediate voltage, and to selectively select based on the reset control signal The ground output is based on the first supply voltage or an output voltage of the first intermediate voltage as a gate control signal for the clamp enable transistor of the intermediate path voltage clamp.
在一些實施方案中,該音訊驅動電路可包含至少一第一電壓選擇器,該第一電壓選擇器經組態以接收該第一中間電壓,並基於用於相關電晶體之一經接收電晶體控制信號選擇性地輸出該中間電壓作為用於至少一個電晶體之一閘極控制電壓。該第一電壓選擇器可經組態以接收該電晶體控制信號、該第一供應電壓及該第一中間電壓,並基於該電晶體控制信號選擇性地輸出基於該第一供應電壓或該第一中間電壓之一輸出電壓作為該閘極控制電壓。在一些實例中,該第一電晶體可形成該第一電壓選擇器之部分。在一些實例中,該第一電壓選擇器可將一閘極控制電壓輸出至以下各者中之至少一者:該音訊驅動電路之一輸出驅動器之一輸出級之一 電晶體;及一音訊輸出路徑箝位器開關之一電晶體。 In some implementations, the audio driver circuit can include at least a first voltage selector configured to receive the first intermediate voltage and controlled based on the received transistor for one of the associated transistors The signal selectively outputs the intermediate voltage as a gate control voltage for at least one transistor. The first voltage selector can be configured to receive the transistor control signal, the first supply voltage and the first intermediate voltage, and to selectively output based on the first supply voltage or the first intermediate voltage based on the transistor control signal An output voltage of an intermediate voltage is used as the gate control voltage. In some examples, the first transistor may form part of the first voltage selector. In some examples, the first voltage selector can output a gate control voltage to at least one of: one of an output stage of an output driver of an audio driver circuit a transistor; and a transistor of an audio output path clamp switch.
該第一電晶體可被實施為一側向擴散式MOS電晶體裝置或一擴展式汲極MOS電晶體裝置中之一者。 The first transistor may be implemented as one of a laterally diffused MOS transistor device or an extended drain MOS transistor device.
在一些實例中,該電力供應模組可在該第一模式下操作以進一步產生極性與該第一供應電壓相反但量值與該第一供應電壓相等之一第二供應電壓。在此情況下,該音訊驅動電路可進一步包含一第二電壓產生器,其經組態以在該第一模式下將一第二中間電壓輸出至一第二中間電壓路徑以用作至少一第二電晶體之一閘極控制電壓,該第二中間電壓具有低於該第一量值之一量值,以便在施加至該第二電晶體之閘極時將該第二電晶體之閘極-源極電壓之量值維持為低於該第二電晶體之一閘極-源極電壓容限。亦可存在一中間路徑電壓箝位器,其用於將該第二中間電壓路徑選擇性地箝位至一經界定電壓,以便將該第二電晶體之該閘極-源極電壓之該量值維持為低於該容限。用於該第二中間電壓路徑之該電壓箝位器亦可由用於該音訊驅動電路之一重設條件啟用。 In some examples, the power supply module is operable in the first mode to further generate a second supply voltage that is opposite in polarity to the first supply voltage but equal in magnitude to the first supply voltage. In this case, the audio driver circuit may further include a second voltage generator configured to output a second intermediate voltage to a second intermediate voltage path in the first mode for use as at least a first A gate control voltage of the two transistors, the second intermediate voltage has a magnitude lower than the first magnitude so that when applied to the gate of the second transistor the gate of the second transistor - The magnitude of the source voltage is maintained below a gate-source voltage tolerance of the second transistor. There may also be an intermediate path voltage clamp for selectively clamping the second intermediate voltage path to a defined voltage for the magnitude of the gate-source voltage of the second transistor maintained below this tolerance. The voltage clamp for the second intermediate voltage path can also be enabled by a reset condition for the audio driver circuit.
在一些實例中,該電力供應模組可進一步可在一第二模式下操作,在該第二模式下,該第一供應電壓具有低於該第一量值之一第二量值。在該第二模式下之正常操作中,該第一電晶體之一源極端子處之一電壓量值可能不超過該第一電晶體之該閘極-源極電壓容限。該電壓產生器可在該第二模式下被停用。 In some examples, the power supply module may be further operable in a second mode in which the first supply voltage has a second magnitude that is lower than the first magnitude. In normal operation in the second mode, a voltage magnitude at a source terminal of the first transistor may not exceed the gate-source voltage tolerance of the first transistor. The voltage generator can be disabled in the second mode.
該音訊驅動電路可被實施為一積體電路。該音訊驅動電路可形成一音訊編解碼器之至少部分。 The audio driving circuit can be implemented as an integrated circuit. The audio driver circuit can form at least part of an audio codec.
實施例亦係關於一種電子裝置,其包含如本文中之任一變型中所描述之一音訊驅動電路。該電子裝置可包括用於在使用中與一配件設備進行一可移除配合連接之一連接器,且該音訊驅動電路可經組態以將至 少一個音訊驅動信號輸出至該連接器之一電接點。該電子裝置可為以下各者中之至少一者:一攜帶型裝置、一電池供電裝置、一通信裝置;一行動或蜂巢式電話裝置或一智慧型電話;一計算裝置;一平板電腦、筆記型電腦、膝上型電腦或桌上型電腦;一可穿戴裝置;一智慧型手錶;一語音啟動或語音控制裝置。 Embodiments also relate to an electronic device comprising an audio driver circuit as described in any of the variations herein. The electronic device may include a connector for a removable mating connection with an accessory device in use, and the audio driver circuit may be configured to At least one audio driving signal is output to an electrical contact of the connector. The electronic device can be at least one of the following: a portable device, a battery powered device, a communication device; a mobile or cellular phone device or a smart phone; a computing device; a tablet, notebook A laptop, laptop or desktop computer; a wearable device; a smart watch; a voice activated or voice controlled device.
在另一態樣中,提供一種音訊驅動電路,其包含:多個電晶體;及一電力供應模組,其可在一第一模式下操作以產生具有一第一電壓量值之至少一第一電壓,其中該第一電壓量值使得在該第一模式下之使用中,對於一第一組一個或多個電晶體,該第一組中之該電晶體之一源極端子可超過該電晶體之閘極-源極電壓容限。一中間電壓產生器經組態以在該第一模式下將一第一中間電壓輸出至一中間電壓路徑以提供可用作該第一組之該一個或多個電晶體之一閘極控制電壓的一電壓,其中該第一中間電壓與該第一電壓相差小於該第一組中之一電晶體之該閘極-源極電壓容限的一量。一中間路徑電壓箝位器經提供以用於回應於用於該音訊驅動電路之一重設條件而對該中間電壓路徑進行選擇性地電壓箝位。 In another aspect, an audio driver circuit is provided that includes: a plurality of transistors; and a power supply module operable in a first mode to generate at least a first voltage having a first voltage magnitude a voltage, wherein the first voltage magnitude is such that in use in the first mode, for a first group of one or more transistors, a source terminal of the transistor in the first group can exceed the The gate-source voltage tolerance of the transistor. An intermediate voltage generator configured to output a first intermediate voltage to an intermediate voltage path in the first mode to provide a gate control voltage usable as the one or more transistors of the first set , wherein the first intermediate voltage differs from the first voltage by an amount less than the gate-source voltage tolerance of a transistor in the first group. An intermediate path voltage clamp is provided for selectively voltage clamping the intermediate voltage path in response to a reset condition for the audio driver circuit.
在另一態樣中,提供一種音訊驅動器電路,其包含:至少一第一電晶體,其具有一閘極-源極電壓容限;及一電力供應器,其具有一電力供應控制器,該電力供應控制器可操作以在一第一模式下控制該電力供應器以產生具有大於該閘極-源極電壓容限之一量值之一供應電壓。一電壓控制器經組態以產生一第一控制電壓以用作至少該第一電晶體之一閘極控制電壓以將該第一電晶體之閘極-源極電壓之量值維持為低於該容限,且一電壓箝位器經組態以在該電力供應控制器不可操作的情況下將該電壓控制器之輸出箝位至該第一控制電壓。 In another aspect, an audio driver circuit is provided, comprising: at least one first transistor having a gate-source voltage tolerance; and a power supply having a power supply controller, the The power supply controller is operable to control the power supply in a first mode to generate a supply voltage having a magnitude greater than the gate-source voltage tolerance. A voltage controller is configured to generate a first control voltage for use as at least a gate control voltage of the first transistor to maintain the magnitude of the gate-source voltage of the first transistor below the tolerance, and a voltage clamp is configured to clamp the output of the voltage controller to the first control voltage if the power supply controller is inoperable.
在另一態樣中,提供一種積體電路,其包含:一電壓產生器, 其用於產生一第一控制電壓以用作至少一個電晶體之安全閘極控制電壓;及一電壓箝位器,其用於將電壓控制器之輸出箝位至該第一控制電壓,其中該電壓箝位器由用於該積體電路之一重設信號啟用及停用。 In another aspect, an integrated circuit is provided, comprising: a voltage generator, it is used to generate a first control voltage for use as a safety gate control voltage for at least one transistor; and a voltage clamp is used to clamp the output of the voltage controller to the first control voltage, wherein the The voltage clamp is enabled and disabled by a reset signal for the integrated circuit.
除非明確地指示為相反,否則本文中所論述之各種實施方案的各種特徵中之任一者可與其他所描述特徵中之任一者或多者一起以任何及所有合適組合進行實施。 Any of the various features of the various implementations discussed herein can be implemented in any and all suitable combinations with any one or more of the other described features, unless expressly indicated to the contrary.
100:音訊驅動電路/音訊驅動電路系統 100: Audio driver circuit/audio driver circuit system
101:主機裝置 101: Host device
102:音訊負載/擴音器 102: Audio Load/Amplifier
103:配件設備 103: Accessory Equipment
104:差分輸出數位至類比轉換器(DAC) 104: Differential Output Digital-to-Analog Converter (DAC)
105:輸出驅動器/差分輸入放大器 105: Output Driver/Differential Input Amplifier
106:電力供應模組 106: Power supply module
107:接點 107: Contact
108:連接器/虛線框 108: Connector/dotted box
109:接點 109: Contact
110:虛線框/音訊輸出路徑箝位器 110: Dotted box/Audio output path clamp
111P:正電壓產生器 111P: Positive Voltage Generator
111N:負電壓產生器 111N: Negative Voltage Generator
112P:正電壓選擇器 112P: Positive voltage selector
112N:電壓選擇器 112N: Voltage selector
113N:開關 113N: switch
113P:開關 113P: switch
114N:安全電壓箝位器 114N: Safety Voltage Clamp
114P:安全電壓箝位器 114P: Safety Voltage Clamp
115:箝位器啟用電路系統 115: Clamp enable circuitry
201:電流源 201: Current Source
202:電阻 202: Resistor
203:緩衝器 203: Buffer
204:重設模組(POR) 204: Reset Mod (POR)
205:箝位器啟用電晶體 205: Clamp enable transistor
206:位準移位電壓選擇器/選擇性位準移位器 206: Level Shift Voltage Selector/Selective Level Shifter
206N:選擇性位準移位器 206N: Selective Level Shifter
301:電晶體/PMOS 301: Transistor/PMOS
302:電晶體/NMOS 302: Transistor/NMOS
303:電晶體/PMOS 303: Transistor/PMOS
304:電晶體/NMOS 304: Transistor/NMOS
305:電晶體/PMOS裝置 305: Transistor/PMOS Devices
306:電晶體/PMOS裝置 306: Transistor/PMOS Devices
307:電晶體/NMOS 307: Transistor/NMOS
308:電晶體/PMOS裝置 308: Transistor/PMOS Devices
309:電晶體/PMOS裝置 309: Transistor/PMOS Devices
310:電晶體/NMOS 310: Transistor/NMOS
401:電晶體 401: Transistor
402:電晶體 402: Transistor
403:電晶體 403: Transistor
404:電晶體 404: Transistor
405:電晶體/NMOS裝置 405: Transistor/NMOS Devices
406:電晶體/NMOS裝置 406: Transistor/NMOS Devices
407:電晶體/PMOS裝置 407: Transistor/PMOS Devices
408:電晶體/NMOS裝置 408: Transistor/NMOS Devices
409:電晶體 409: Transistor
410:電晶體/PMOS裝置 410: Transistor/PMOS Devices
501:啟用開關 501: Enable switch
601:輸出PMOS電晶體 601: Output PMOS transistor
602:輸出NMOS電晶體 602: Output NMOS transistor
603:電晶體 603: Transistor
604:電晶體 604: Transistor
605:PMOS電晶體開關 605: PMOS transistor switch
606:NMOS電晶體開關 606: NMOS transistor switch
701:電晶體 701: Transistor
702:電晶體 702: Transistor
703:電晶體 703: Transistor
C1:閘極控制電壓 C1: gate control voltage
C2:閘極控制電壓 C2: gate control voltage
CM1:電容器 C M1 : Capacitor
CM2:電容器 C M2 : Capacitor
GND:接地 GND: ground
INA:信號 INA: Signal
INB:信號 INB: Signal
N1:節點 N1: Node
N2:中點節點 N2: Midpoint Node
N3:節點/電壓 N3: Node/Voltage
N4:節點 N4: Node
OUT:放大器輸出 OUT: Amplifier output
RST:重設信號 RST: reset signal
SRST:重設控制信號 S RST : reset control signal
SD:音訊驅動信號 S D : Audio driver signal
SIN:輸入信號 S IN : input signal
SN:第二類比信號 S N : second analog signal
SP:第一類比信號 S P : first analog signal
SLS:輸入信號 S LS : input signal
STN:電晶體控制信號 S TN : Transistor control signal
STP:電晶體控制信號/邏輯信號 S TP : Transistor Control Signal/Logic Signal
V1:電壓 V1: Voltage
VBD:電池電壓 V BD : battery voltage
VBR:經調節電池電壓 V BR : Regulated battery voltage
VNEG:負供應電壓 V NEG : Negative Supply Voltage
VPOS:正供應電壓 V POS : Positive Supply Voltage
VPS:輸入電力供應電壓 V PS : Input power supply voltage
VSAFEP:正中間電壓 V SAFEP : Positive Intermediate Voltage
VSAFEN:負中間電壓 V SAFEN : Negative Intermediate Voltage
VTN:控制電壓 V TN : Control voltage
VTN1:控制信號 V TN1 : Control signal
VTN2:受控信號 V TN2 : Controlled signal
VTP:控制電壓 V TP : Control voltage
VTP1:控制信號 V TP1 : Control signal
VTP2:受控信號 V TP2 : Controlled signal
為了較佳地理解本揭示內容之實例且為了較清晰地展示可如何實行該等實例,現在將僅藉助於實例參考以下圖式,在圖式中: In order to better understand the examples of the present disclosure and to show more clearly how they may be practiced, reference will now be made to the following drawings by way of example only, in which:
圖1繪示根據一實施例之音訊驅動電路系統之一個實例; FIG. 1 illustrates an example of an audio driver circuit system according to an embodiment;
圖2繪示適合於維持正中間電壓之中間電壓產生路徑及安全電壓箝位器之實例; FIG. 2 shows an example of an intermediate voltage generation path and a safe voltage clamp suitable for maintaining a positive intermediate voltage;
圖3繪示適合於正電壓之選擇性位準移位電路之一個實例; FIG. 3 shows an example of a selective level shift circuit suitable for positive voltages;
圖4繪示適合於負電壓之選擇性位準移位電路之一個實例; 4 illustrates one example of a selective level shift circuit suitable for negative voltages;
圖5繪示適合於維持負中間電壓之安全電壓箝位器之實例; Figure 5 shows an example of a safety voltage clamp suitable for maintaining a negative intermediate voltage;
圖6繪示合適音訊輸出驅動器之部分之一個實例;且 Figure 6 illustrates one example of a portion of a suitable audio output driver; and
圖7繪示合適輸出路徑箝位器開關配置之一個實例。 Figure 7 illustrates one example of a suitable output path clamp switch configuration.
以下描述闡述了根據本揭示內容之實例實施例。其他實例實施例及實施方案對於一般熟習此項技術者而言將顯而易見。此外,一般熟習此項技術者將認識到,可代替或結合下文所論述之實施例而應用各種等效技術,且所有此類等效者應被視為由本揭示內容涵蓋。 The following description sets forth example embodiments in accordance with the present disclosure. Other example embodiments and implementations will be apparent to those of ordinary skill in the art. Furthermore, those of ordinary skill in the art will recognize that various equivalent techniques may be employed in place of or in conjunction with the embodiments discussed below, and all such equivalents should be considered to be covered by this disclosure.
如上文所論述,主機裝置可包括用於將音訊驅動信號輸出至音訊換能器之音訊驅動器電路系統,諸如音訊編解碼器或其類似者。音訊驅動器電路可能能夠將音訊驅動信號輸出至換能器,例如擴音器,該換能器與音訊驅動器電路系統一起為主機裝置之部分。另外或替代地,音訊驅動器電路可能能夠將音訊驅動信號輸出至在使用中可移除地連接至主機裝置之配件設備,且音訊驅動器電路系統可因此包含頭戴式耳機放大器電路,例如作為音訊編解碼器之至少部分。 As discussed above, the host device may include audio driver circuitry, such as an audio codec or the like, for outputting audio drive signals to the audio transducers. The audio driver circuit may be capable of outputting an audio drive signal to a transducer, such as a loudspeaker, that together with the audio driver circuitry is part of the host device. Additionally or alternatively, the audio driver circuit may be capable of outputting an audio driver signal to accessory equipment that, in use, is removably connected to the host device, and the audio driver circuit may thus include a headphone amplifier circuit, for example as an audio encoder at least part of the decoder.
圖1繪示根據一實施例之音訊驅動電路100之一個簡化實例。圖1繪示了:音訊驅動電路100可為主機裝置101之部分,且經配置成在使用中輸出音訊驅動信號SD以驅動音訊負載102,例如擴音器。在圖1之實例中,音訊負載102為可移除地連接至主機裝置101之配件設備103之擴音器,但在其他實例中,音訊負載可為主機裝置101之部分。應注意,圖1為了簡單起見而展示僅僅一個音訊輸出,但實務上可存在額外音訊信號路徑,例如用於將立體聲音訊輸出信號驅動至經連接配件設備之左及右擴音器的左及右音訊聲道。
FIG. 1 illustrates a simplified example of an
在圖1之實例中,音訊信號路徑包括數位至類比轉換器(DAC)104及輸出驅動器105,諸如合適放大器。在此實例中,DAC 104接收輸入信號SIN並產生差分輸出信號,且因此產生作為差分對之部分的第一類比信號SP及第二類比信號SN。在此實例中,輸出驅動器105因此為產生驅動信號SD之差分輸入放大器。電力供應模組106接收輸入電力供應電壓VPS,並產生用於向音訊輸出路徑之組件進行供應的至少一種供應電壓。在此實例中,電力供應模組106產生向輸出驅動器105進行供應之雙極性供應電壓VPOS及VNEG。在一些實例中,電力供應模組106可為接收輸入電力供應電壓VPS並產生雙極性供應電壓VPOS及VNEG之合適DC-DC轉換器,
例如電荷泵。
In the example of FIG. 1, the audio signal path includes a digital-to-analog converter (DAC) 104 and an
輸出驅動器105將輸出驅動信號SD產生為相對於經界定參考電壓進行正及負變化,該經界定參考電壓在此實例中為接地(GND)。應注意,儘管圖1展示了差分輸出DAC 104及差分輸入放大器105,但將理解,可在一些音訊驅動電路中實施單端音訊信號路徑。
The
在此實例中,輸出由輸出驅動器105產生之驅動信號SD以驅動例如頭戴式耳機或耳塞揚聲器或其類似者之配件設備103之擴音器102。在使用中,配件設備103可經由合適連接器可移除地連接至主機裝置,該等連接器係諸如配件設備之接頭及主機裝置之插口,但可使用任何合適插頭及插座連接器。在使用中,音訊配件設備103之接點107,例如接頭(一般由虛線框108指示)之極點,將直接或間接耦接至主機裝置101之各別接點109,例如插口(一般由虛線框110指示)之極點。音訊配件設備103之擴音器102亦可具有經由配件設備之連接器108之一個接點/極點107到達經界定參考電壓之返回路徑,在此實例中到達接地。
In this example, the drive signal SD generated by the
圖1亦繪示了:可存在音訊輸出路徑箝位器110,其用於在不需要輸出音訊驅動信號SD時將放大器105之輸出箝位至參考電壓,在此實例中為接地(GND)。音訊輸出路徑箝位器110可在音訊驅動電路100正操作以提供驅動信號時被停用,但可在需要將輸出路徑箝位-亦即保持-於接地時被啟用。音訊輸出路徑箝位器110可包含用於將音訊輸出路徑選擇性地耦接至參考電壓之開關配置,該參考電壓在此實例中為接地。
Figure 1 also shows that there may be an audio output path clamp 110 for clamping the output of
將瞭解,音訊驅動電路100之各種組件通常將包含半導體裝置,尤其是電晶體。輸出驅動器105通常將包含多個電晶體。同樣地,音訊輸出路徑箝位器110通常可由一個或多個電晶體實施。熟習此項技術者將容易理解,諸如電晶體之半導體裝置通常將具有某一電壓額定值,亦即
橫越該裝置之電壓之電壓容限。電壓容限指示可以安全且持續之方式耐受的可能橫越裝置之特定端子的最大電壓。裝置可能能夠在短時間段內承受大於指定容限之電壓應力,但高於給定容限的相對較長時段之電壓應力會縮短裝置之工作壽命,且顯著地高於給定容限之電壓應力會對裝置造成損壞及/或故障。舉例而言,高於電晶體裝置之閘極-源極擊穿電壓之電壓應力可能會導致損壞。
It will be appreciated that the various components of the
習知地,對於通常用於頭戴式耳機驅動器電路及其類似者中之電力供應及輸出信號位準,可使用適合於大量製造之標準半導體處理容易製造具有合適電壓額定值之電晶體。僅僅藉助於實例,習知單聲道-亦即左或右-頭戴式耳機驅動電路通常可能已被實施為操作成驅動信號SD處於約一伏特rms(1Vrms)左右之位準,且因此峰值至峰值電壓範圍為大約兩(2)至三(3)伏特左右,例如電壓範圍為+1.5V至-1.5V。至少對於一些常見的半導體製程節點幾何結構,可容易實施並大量生產能夠應對比如大約3.5V之此類電壓應力之電晶體。 Conventionally, for the power supply and output signal levels commonly used in headphone driver circuits and the like, transistors with suitable voltage ratings can be readily fabricated using standard semiconductor processing suitable for high volume manufacturing. Merely by way of example, conventional mono-ie left or right-headphone drive circuits may typically have been implemented to operate with drive signal SD at a level of about one volt rms (1Vrms), and thus The peak-to-peak voltage range is about two (2) to three (3) volts, eg, the voltage range is +1.5V to -1.5V. For at least some common semiconductor process node geometries, transistors capable of handling such voltage stresses, such as about 3.5V, can be easily implemented and mass produced.
在一些情況下,當驅動諸如呈現比如大約數百歐姆之相對高阻抗負載之頭戴式耳機的音訊配件時,可能需要能夠在至少一種操作模式下輸出較大振幅驅動信號,例如以提供良好的使用者體驗。再次,僅僅藉助於實例,在一些情況下,可能需要輸出大約幾伏特rms之驅動信號SD,驅動信號SD可能涉及大約幾乎十伏特左右之峰值至峰值電壓擺動,例如自比如+5V至-5V之擺動。因此,在至少一種操作模式下,電力供應電壓VPOS及VNEG之量值可為大約5.5V左右。此類電壓量值及峰值至峰值電壓擺動通常將大於如用於音訊驅動電路系統的習知半導體之電壓容限(voltage tolerance)。 In some cases, when driving audio accessories such as headphones that present relatively high impedance loads of, say, hundreds of ohms, it may be desirable to be able to output larger amplitude drive signals in at least one mode of operation, eg, to provide good User experience. Again, by way of example only, in some cases it may be desirable to output a drive signal SD of about a few volts rms , which may involve a peak-to-peak voltage swing of the order of almost ten volts or so, such as from +5V to - 5V swing. Therefore, in at least one mode of operation, the magnitude of the power supply voltages V POS and V NEG may be around 5.5V. Such voltage magnitudes and peak-to-peak voltage swings will typically be greater than the voltage tolerance of conventional semiconductors such as those used in audio drive circuitry.
已提出,一些MOSFET型電晶體可被實施為側向擴散式 MOS裝置(LDMOS)或擴展式汲極MOS裝置(EDMOS)。LDMOS及EDMOS為已在功率放大器領域中用於RF通信之已知設計。此類裝置被設計成能夠承受可大於其他標準設計之汲極-源極電壓。舉例而言,可使用習知半導體製造製程來生產電壓額定值為5V或12V(對於汲極-源極電壓)之LDMOS裝置,且因此可在其他習知頭戴式耳機驅動器電路中實施該等LDMOS裝置。 It has been proposed that some MOSFET type transistors can be implemented as side diffused MOS device (LDMOS) or extended drain MOS device (EDMOS). LDMOS and EDMOS are known designs that have been used in the field of power amplifiers for RF communications. Such devices are designed to withstand drain-source voltages that may be greater than other standard designs. For example, conventional semiconductor fabrication processes can be used to produce LDMOS devices with voltage ratings of 5V or 12V (for drain-source voltage), and thus can be implemented in other conventional headphone driver circuits and other LDMOS devices.
因此,可有利地實施LDMOS或EDMOS或相似增強型容限電晶體,以允許如上文所論述之音訊驅動電路之此類高功率操作。取決於橫越處於關斷狀態之電晶體之預期電壓應力,該電晶體可在適當時被實施為例如5V裝置或12V裝置。 Thus, LDMOS or EDMOS or similar enhancement mode tolerance transistors may be advantageously implemented to allow such high power operation of audio driver circuits as discussed above. Depending on the expected voltage stress across the transistor in the off state, the transistor may be implemented, for example, as a 5V device or a 12V device as appropriate.
然而,儘管將電晶體實施為LDMOS或EDMOS可改良汲極之電壓處置能力,例如自標準設計之比如約3.5V至5V或12V,但裝置之閘極氧化物可實際上相同於標準裝置,且因此仍存在對閘極之電壓容限之限制,且尤其是對可安全地耐受之最大閘極-源極電壓之限制。因此,儘管LDMOS或EDMOS之汲極-源極電壓容限可為例如5V或12V,但閘極-源極電壓容限仍可為大約3.5V。 However, although implementing the transistors as LDMOS or EDMOS may improve the voltage handling capability of the drain, such as about 3.5V to 5V or 12V from standard designs, the gate oxide of the device may be practically the same as the standard device, and There is thus still a limit to the voltage tolerance of the gate, and especially a limit to the maximum gate-source voltage that can be safely withstood. Thus, although the drain-source voltage tolerance of an LDMOS or EDMOS may be, for example, 5V or 12V, the gate-source voltage tolerance may still be about 3.5V.
本揭示內容之實施例係關於音訊驅動電路,其可有利地在相對高功率操作模式下操作,例如以產生諸如上文所論述之驅動信號。在此類實施方案中,音訊電路之電力供應器可在至少一種操作模式-其將在本文中被稱為高電壓操作模式-下操作以產生相對高供應電壓,例如量值使得第一電晶體之端子處之電壓量值可超過該第一電晶體之電壓容限的至少一種供應電壓。詳言之,高電壓操作模式可為第一電晶體之源極端子處之電壓可經歷大於第一電晶體之閘極-源極電壓容限且可大於閘極-源極擊穿電壓之電壓量值的操作模式。在高電壓操作模式下,供應電壓之量值可大 於第一電晶體之閘極-源極電壓容限。在此類高電壓操作模式下,音訊驅動電路控制第一電晶體之閘極電壓,以便保持於閘極-源極電壓容限內,亦即低於閘極-源極擊穿電壓。詳言之,音訊驅動電路產生可用作第一電晶體之閘極控制電壓的至少一種中間電壓。 Embodiments of the present disclosure relate to audio drive circuits that can advantageously operate in relatively high power modes of operation, eg, to generate drive signals such as those discussed above. In such implementations, the power supply of the audio circuit may operate in at least one mode of operation - which will be referred to herein as a high voltage mode of operation - to generate a relatively high supply voltage, eg, of a magnitude such that the first transistor The magnitude of the voltage at the terminals of the at least one supply voltage may exceed the voltage tolerance of the first transistor. In detail, the high voltage mode of operation may be that the voltage at the source terminal of the first transistor may experience a voltage greater than the gate-source voltage tolerance of the first transistor and may be greater than the gate-source breakdown voltage The operating mode of the magnitude. In high voltage operation mode, the magnitude of supply voltage can be large The gate-source voltage tolerance of the first transistor. In such high voltage operating modes, the audio driver circuit controls the gate voltage of the first transistor so as to remain within the gate-source voltage tolerance, ie, below the gate-source breakdown voltage. Specifically, the audio driver circuit generates at least one intermediate voltage that can be used as a gate control voltage of the first transistor.
第一電晶體可為音訊驅動電路之電晶體,其經配置成使得在高電壓操作模式下之使用中,第一電晶體之源極可經歷實際上處於或接近相關供應電壓之電壓,亦即源極電壓對於諸如PMOS之p通道裝置可處於或接近正供應電壓VPOS或對於諸如NMOS之n通道裝置可處於或接近負供應電壓VNEG。 The first transistor may be a transistor of an audio driver circuit configured such that, in use in a high voltage mode of operation, the source of the first transistor may experience a voltage that is actually at or close to the relevant supply voltage, i.e. The source voltage may be at or near the positive supply voltage VPOS for p-channel devices such as PMOS or at or near the negative supply voltage VNEG for n-channel devices such as NMOS.
音訊驅動電路經組態以產生至少一種中間電壓,其可用作至少第一電晶體之閘極控制電壓。中間電壓可被產生為極性與相關供應電壓相同,但量值較低。中間電壓因此為介於例如接地之參考電壓與相關供應電壓之間的中間電壓,且因此為非零(相對於參考電壓)。詳言之,中間電壓可被產生為與相關供應電壓相差大於用於控制通過第一電晶體之導通之電壓閾值但小於第一電晶體之閘極-源極電壓容限的量。中間電壓可因此被識別為安全電壓位準,其可安全地供應至第一電晶體之閘極,並將使閘極-源極電壓保持於容限內,即使第一電晶體之源極處於相關供應電壓亦如此。 The audio driver circuit is configured to generate at least one intermediate voltage that can be used as a gate control voltage for at least the first transistor. The intermediate voltage may be generated with the same polarity as the associated supply voltage, but with a lower magnitude. The intermediate voltage is thus an intermediate voltage between a reference voltage, eg ground, and the associated supply voltage, and is therefore non-zero (relative to the reference voltage). In particular, the intermediate voltage may be generated to differ from the associated supply voltage by an amount greater than a voltage threshold for controlling conduction through the first transistor but less than the gate-source voltage tolerance of the first transistor. The intermediate voltage can thus be identified as a safe voltage level, which can be safely supplied to the gate of the first transistor and will keep the gate-source voltage within tolerance even if the source of the first transistor is at The same applies to the associated supply voltage.
僅僅作為實例,在一些實施方案中,電力供應模組可在高電壓模式下操作以產生具有標稱量值或4V或更大或4.5V或更大或5V或更大之至少一種供應電壓。電力供應模組可產生具有此等量值之雙極性電壓。供應電壓之量值可大於第一電晶體之電壓容限,尤其是閘極-源極電壓容限。在一些實施方案中,第一電晶體之閘極-源極電壓容限可小於4V。在一些實例中,第一電晶體之閘極-源極電壓容限或額定值可為3V或更大,或3.5V或更大。中間電壓可被產生為量值比相關供應電壓低至少2V 或更大,或至少2.5V或至少3V,但不會相差超過閘極-源極容限。 Merely by way of example, in some implementations, the power supply module may operate in a high voltage mode to generate at least one supply voltage of nominal magnitude or 4V or more or 4.5V or more or 5V or more. The power supply module can generate bipolar voltages of these magnitudes. The magnitude of the supply voltage may be greater than the voltage tolerance of the first transistor, especially the gate-source voltage tolerance. In some implementations, the gate-source voltage tolerance of the first transistor may be less than 4V. In some examples, the gate-source voltage tolerance or rating of the first transistor may be 3V or more, or 3.5V or more. The intermediate voltage can be generated to be at least 2V lower in magnitude than the associated supply voltage or more, or at least 2.5V or at least 3V, but not differ by more than the gate-source tolerance.
安全中間電壓可選擇性地用以提供合適控制電壓給音訊驅動電路之一個或多個電晶體,例如給可在高電壓操作模式下在一個端子處經受相對高電壓之一組一個或多個電晶體。舉例而言,考慮到電晶體使其源極耦接至相關供應電壓,例如PMOS使其源極耦接至正供應電壓VPOS,且因此無論電晶體是否導通,源極皆保持於此電壓。在此情況下,若閘極電壓被控制為實質上等於相關供應電壓,則實際上將不存在閘極-源極電壓且電晶體將關斷。若閘極電壓被驅動至中間電壓位準,則閘極源極電壓將足以接通電晶體,但閘極源極電壓將保持於容限內。 The safe intermediate voltage can be selectively used to provide a suitable control voltage to one or more transistors of an audio driver circuit, such as to a group of one or more transistors that can withstand relatively high voltages at one terminal in a high voltage operating mode. crystal. For example, consider that a transistor has its source coupled to the relevant supply voltage, such as a PMOS, has its source coupled to the positive supply voltage V POS , and therefore the source remains at this voltage whether the transistor is on or not. In this case, if the gate voltage is controlled to be substantially equal to the relevant supply voltage, there will be virtually no gate-source voltage and the transistor will be turned off. If the gate voltage is driven to an intermediate voltage level, the gate-source voltage will be sufficient to turn on the transistor, but the gate-source voltage will remain within tolerance.
音訊驅動電路100因此包括用於將合適中間電壓輸出至中間電壓路徑之至少一個電壓產生器。圖1繪示了:在此實例中,可存在各別正電壓產生器111P及負電壓產生器111N(其可由附圖標記111共同地或個別地識別),當電力供應模組106處於高電壓操作模式時,該等電壓產生器可操作以產生各別正中間電壓VSAFEP及負中間電壓VSAFEN。
The
電壓產生器111可以任何便利方式產生中間電壓。圖2更詳細地繪示了正中間電壓路徑。圖2繪示了:在此實例中,電壓產生器111P包含用於產生通過經界定電阻202之經界定電流以產生電壓之電流源201,該電壓由緩衝器203緩衝以提供正中間電壓VSAFEP。
The voltage generator 111 may generate the intermediate voltage in any convenient manner. Figure 2 shows the positive intermediate voltage path in more detail. FIG. 2 shows that, in this example,
正中間電壓VSAFEP及負中間電壓VSAFEN可因此選擇性地用以提供用於在高電壓模式下控制音訊驅動電路系統100之電晶體之閘極電壓的閘極控制電壓。如上文所論述,若相關電晶體之源極保持於該等供應電壓中之一者下,則可藉由將閘極電壓選擇性地控制為分別等於中間電壓或供應電壓而將相關電晶體控制為接通或關斷。返回參考圖1,中間電壓VSAFEP及VSAFEN因此各自被供應至至少一個各別電壓選擇器112P或112N。
電壓選擇器112P及112N各自可操作以選擇性地輸出相關中間電壓,或某一其他電壓,在此實例中為相關供應電壓,以提供合適閘極控制電壓。
The positive intermediate voltage V SAFEP and the negative intermediate voltage V SAFEN may thus be selectively used to provide gate control voltages for controlling the gate voltages of the transistors of the
在圖1之實例中,電壓選擇器112P接收正中間電壓VSAFEP及正供應電壓VPOS,並輸出可在實質上等於VPOS之電壓或實質上等於VSAFEP之電壓之間選擇性地變化的至少一種控制電壓VTP。如上文所提及,此類控制電壓將適合於例如在源極電壓處於或接近正供應VPOS之PMOS電晶體之接通及關斷兩種狀態下控制該PMOS電晶體。
In the example of FIG. 1,
同樣地,電壓選擇器112N接收負中間電壓VSAFEN及負供應電壓VNEG,並將此等電壓中之一者選擇性地輸出為至少控制電壓VTN,控制電壓VTN將適合於在源極電壓處於或接近負供應VNEG之NMOS電晶體之接通及關斷兩種狀態下控制該NMOS電晶體。
Likewise,
電壓選擇器112P及112N可由各別電晶體控制信號STP及STN控制,該等電晶體控制信號可例如為邏輯信號,其被產生為指示電晶體之所需狀態,亦即關斷或接通。在圖1之實例中,電壓選擇器實際上為位準移位器,其對輸入電晶體控制信號進行位準移位以位準移位至在中間電壓與供應電壓之間變化的合適閘極電壓控制,該輸入電晶體控制信號可例如為在接地與低正電壓之間變化以用信號傳送邏輯0及邏輯1的邏輯信號。
Voltage selectors 112P and 112N may be controlled by respective transistor control signals STP and STN, which may be logic signals, for example, which are generated to indicate the desired state of the transistors, ie, off or on. Pass. In the example of Figure 1, the voltage selector is actually a level shifter that level shifts the input transistor control signal to level shift to the appropriate gate that varies between the intermediate voltage and the supply voltage Voltage control, the input transistor control signal may be, for example, a logic signal that varies between ground and a low positive voltage to signal logic 0 and
圖3繪示可用作正電壓選擇器112P之合適位準移位電壓選擇器之一個實例。電壓選擇器具有輸入級,其包含連接於電壓V1與參考電壓之間的四個電晶體301至304,該參考電壓在此實例中為接地。電壓V1可為在高電壓操作模式下低於供應電壓VPOS之正電壓,且可例如為輸入至電力供應模組之電力供應電壓VPS。此使輸入級能夠為低功率級,即使當音訊驅動電路正在高電壓模式下操作時亦如此。輸入信號SLS可為合適邏輯信號,其對於電壓選擇器112P可為邏輯信號STP。此輸入信號耦接至串聯連
接之PMOS 301及NMOS 302電晶體開關之閘極,且因此選擇性地接通此等開關中之一者以將節點N1(在PMOS 301與NMOS 302之間)驅動至V1或接地。因此,電晶體301及302被連接為並操作為反相器。串聯連接之PMOS 303及NMOS 304之閘極由節點N1處之電壓驅動,使得中點節點N2處之電壓為V1或接地中之另一者。因此,電晶體303及304亦被連接為並操作為反相器。節點N1及N2處之互補電壓控制包含電晶體305至310的位準移位電壓選擇器之輸出級。
3 illustrates one example of a suitable level-shifting voltage selector that may be used as
PMOS 305、PMOS 306及NMOS 307串聯連接於正供應電壓VPOS與參考電壓之間的一個分支中,該參考電壓在此實例中為接地。同樣地,PMOS 308、PMOS 309及NMOS 310串聯連接於此等電壓之間的另一分支中。PMOS 305使其源極耦接至正供應電壓VPOS,且其閘極由PMOS 308與PMOS 309之間的節點N3處之電壓驅動。同樣地,PMOS 308使其源極耦接至正供應電壓VPOS,並使其閘極由節點N4處之電壓驅動。PMOS 306及PMOS 309使其閘極耦接至正中間電壓,並使其源極分別耦接至節點N4及N3。節點N1及N2處之互補電壓驅動NMOS 310及NMOS 307之閘極,以便控制通過一個分支或另一分支之導通。位準移位電壓選擇器之輸出級之PMOS裝置305、306、308及309之間的相互作用將節點N3及N4處之電壓分別調節為接近供應電壓VPOS及正中間電壓或反之亦然,此取決於哪一NMOS接通,且因此取決於輸入信號STP之狀態。可自節點N3或等效地自節點N4分接控制電壓VTP,或可自兩個節點分接互補輸出。
輸出級之PMOS 305及PMOS 308之源極端子耦接至正供應電壓。然而,由於節點N3及N4被調節為不降為低於正中間電壓VSAFEP,故此等電晶體之閘極-源極電壓維持於容限內。同樣地,分別耦接至節點N4及N3的PMOS 306及309之源極可升為處於或接近正供應電壓VPOS,但此
等裝置之閘極維持於中間電壓VSAFEP下且因此保持於閘極-源極電壓容限內。
The source terminals of
圖4繪示可用作負選擇器112N之合適位準移位電壓選擇器之實例。再次,此位準移位電壓選擇器具有具備電晶體401至404之低電壓輸入級,及具備電晶體405至410之較高電壓輸出級。位準移位選擇器以大體上相同的方式操作,但在此情況下,輸入反相級控制PMOS裝置407及410以控制通過輸出級之分支之導通,且NMOS裝置405至408操作以調節輸出電壓VTN。
4 illustrates an example of a suitable level-shifting voltage selector that may be used as
返回參考圖1,中間電壓VSAFEP及VSAFEN之產生因此有利地允許音訊驅動電路100在高電壓模式下操作,其中供應電壓之量值大於可在使用中經耦接以在一個端子處接收供應電壓之一個或多個電晶體之最大可耐受閘極-源極電壓。
Referring back to FIG. 1 , the generation of intermediate voltages V SAFEP and V SAFEN thus advantageously allows the
在一些實施方案中,音訊驅動電路可在多於一種電壓模式下操作,亦即其中電力供應模組106可操作以在不同電壓模式下輸出量值不同之供應電壓。此可有利地允許在例如出於效能原因而需要將信號驅動至高阻抗負載中時使用高電壓模式,但允許在不需要此類高電壓模式時以較低功率消耗使用較低電壓模式。電力供應模組106可因此可在至少一種低電壓操作模式下操作以產生電力供應,其中供應電壓之量值低於電晶體之閘極-源極容限。在低電壓操作模式下,最大峰值至峰值信號擺動亦可低於閘極-源極容限。
In some implementations, the audio driver circuit may operate in more than one voltage mode, ie, wherein the
當在低電壓模式下操作時,可能無需產生中間電壓。因此,當在低電壓模式下操作時,可停用電壓產生器111,例如可停用圖2中所繪示之緩衝器203。在此情況下,正供應電壓VPOS及負供應電壓VNEG可用作控制電壓,而不會在電晶體上產生不當的電壓應力。可因此閉合開關113P
及113N以將至選擇器112P及112N之安全電壓輸入分別連接至負供應電壓VNEG及正供應電壓VPOS。
When operating in low voltage mode, it may not be necessary to generate an intermediate voltage. Therefore, when operating in the low voltage mode, the voltage generator 111 may be disabled, eg, the
儘管在包括至少一種高電壓模式及至少一種低電壓模式之多種電壓模式下之操作在一些應用中可為有益的,但在其他實施方案中,音訊驅動電路可僅在一種或多種高電壓模式下操作以產生驅動信號,亦即當音訊驅動電路操作以接收輸入信號SIN並產生驅動信號SD時,其始終在高電壓模式下操作。即使是對於可僅在高電壓模式下操作之音訊驅動電路,諸如用於將安全電壓路徑連接至經界定系統電壓之開關113P或113N的開關亦可能有益於在音訊驅動電路之起動期間調節路徑之電壓。
While operation in multiple voltage modes including at least one high voltage mode and at least one low voltage mode may be beneficial in some applications, in other implementations the audio driver circuit may only operate in one or more high voltage modes Operates to generate the drive signal, that is, when the audio drive circuit operates to receive the input signal S IN and generate the drive signal SD , it always operates in the high voltage mode. Even for audio driver circuits that can only operate in high voltage mode, switches such as
因此,一般而言,實施例係關於音訊驅動電路,其包含至少一個電壓產生器111,電壓產生器111在音訊驅動電路之高電壓操作模式下產生用於調節音訊驅動電路之一個或多個電晶體之閘極-源極電壓的合適安全電壓,該一個或多個電晶體可曝露於量值大於其閘極-源極電壓容限之電壓。此在正常操作期間保護相關電晶體免於不當的電壓應力。 Thus, in general, embodiments relate to an audio driver circuit that includes at least one voltage generator 111 that generates one or more voltages for regulating the audio driver circuit in a high voltage mode of operation of the audio driver circuit. A suitable safe voltage for the gate-source voltage of a crystal to which the one or more transistors may be exposed to voltages of magnitude greater than their gate-source voltage tolerance. This protects the associated transistor from undue voltage stress during normal operation.
然而,在音訊驅動電路之硬體重設時會出現問題。熟習此項技術者將瞭解,典型的是使音訊驅動電路系統被實施為積體電路並包括一些重設功能性。音訊驅動電路可經控制以便對可大體上在任何時間接收之重設條件作出回應,並停機。在此情況下,電力供應模組106將停止操作。
However, problems can arise during the hardware reset of the audio driver circuit. Those skilled in the art will appreciate that it is typical for the audio driver circuitry to be implemented as an integrated circuit and to include some reset functionality. The audio driver circuit can be controlled to respond to reset conditions, which can be received substantially at any time, and shut down. In this case, the
若重設條件發生於音訊驅動電路正在高電壓模式下操作的時間,則在該時間之供應電壓將相對高,例如其量值為大約5.5V左右。如上文所論述,電力供應模組通常將包含諸如電荷泵之DC-DC轉換器,且此類DC-DC轉換器通常將經組態以在正常操作中與輸出儲存電容器(未繪示)一起操作以維持供應電壓。回應於重設條件,DC-DC轉換器可停止對此等輸出儲存電容器之充電,但此等儲存電容器將花費一些時間來放電。在一 些實施方案中,各別放電電阻器可在斷電或重設情形中選擇性地串聯連接於各別儲存電容器之兩個端子之間,以便有助於放電,但即使是在此等實施方案中,儲存電容器亦可能需要花費幾毫秒來放電至相對於電晶體之閘極-源極電壓容限安全的位準。 If the reset condition occurs at a time when the audio driver circuit is operating in the high voltage mode, the supply voltage at that time will be relatively high, eg, in the magnitude of about 5.5V. As discussed above, a power supply module will typically include a DC-DC converter such as a charge pump, and such a DC-DC converter will typically be configured to work with an output storage capacitor (not shown) in normal operation operate to maintain supply voltage. In response to the reset condition, the DC-DC converter may stop charging these output storage capacitors, but these storage capacitors will take some time to discharge. In a In some implementations, a respective discharge resistor may be selectively connected in series between the two terminals of the respective storage capacitor in a power-down or reset situation to facilitate discharge, but even in these implementations It may also take a few milliseconds for the storage capacitor to discharge to a level that is safe relative to the gate-source voltage tolerance of the transistor.
在一些情況下,音訊驅動電路可操作以執行可被稱為軟體重設之操作。在此情況下,音訊驅動電路之數位控制電路系統可繼續在停機程序期間接收外部產生之系統時脈,且可以受控方式對音訊驅動器電路進行斷電。在此類軟體重設中,電壓產生器111可經控制以便繼續產生安全中間電壓VSAFEP及VSAFEN,直至電力供應模組之儲存電容器已放電至安全位準為止。 In some cases, the audio driver circuit is operable to perform what may be referred to as a software reset. In this case, the digital control circuitry of the audio driver circuit can continue to receive the externally generated system clock during the shutdown procedure, and the audio driver circuit can be powered down in a controlled manner. In such a software reset, the voltage generator 111 may be controlled so as to continue to generate the safe intermediate voltages V SAFEP and V SAFEN until the storage capacitors of the power supply modules have discharged to a safe level.
然而,音訊電路系統亦可操作以執行可被稱為硬體重設之操作,且在硬體重設中,數位控制電路系統所必要之系統時脈通常將變得不可用。在此類情況下,音訊驅動器電路不能以完全受控方式斷電,且詳言之,可能會失去對安全中間電壓之控制。若安全中間電壓不再可用或顯著地下降,則儘管供應電壓量值仍較高,但此情況會對至少一些電晶體造成損壞。 However, the audio circuitry is also operable to perform what may be referred to as a hardware reset, and in a hardware reset, the system clock necessary to digitally control the circuitry will typically become unavailable. In such cases, the audio driver circuit cannot be powered down in a fully controlled manner and, in particular, may lose control of the safe intermediate voltage. If the safe intermediate voltage is no longer available or drops significantly, this situation can cause damage to at least some of the transistors, although the supply voltage magnitude is still high.
舉例而言,如參考圖3所論述,正中間電壓用以控制電晶體306及309之閘極電壓,此係由於節點N3及N4中之一者處之電壓可實質上等於正供應電壓VPOS。若比如節點N3在硬體重設時處於VPOS且正中間電壓之產生停止,使得電晶體之閘極電壓下降,則橫越電晶體309之閘極-源極電壓應力可相對快速地超過電壓容限。
For example, as discussed with reference to FIG. 3, the positive intermediate voltage is used to control the gate voltages of
在一些情況下,此可因以下事實而加劇:由於中間電壓位準在重設的情況下下降,故開關113P可嘗試接通,此會接著將中間電壓路徑驅動至負供應電壓VNEG。此會導致等於供應電壓之間的差的電壓應力被施
加為用於電晶體309之閘極源極電壓。對於大約±5V左右之供應電壓,及大約3.5V之閘極-源極容限,此類電壓應力很可能會毀壞電晶體309。
In some cases, this may be exacerbated by the fact that since the intermediate voltage level drops under reset, switch 113P may attempt to turn on, which would then drive the intermediate voltage path to the negative supply voltage V NEG . This results in a voltage stress equal to the difference between the supply voltages being applied as the gate-source voltage for
音訊驅動器電路100因此包括至少一個安全電壓箝位器114,其用於回應於重設條件,尤其是回應於硬體重設,而將中間電壓路徑選擇性地箝位至安全電壓位準。圖1繪示了:存在分別用於正及負中間電壓路徑之安全電壓箝位器114P及114N(其可由附圖標記114共同地或個別地提及)。安全電壓箝位器114在正常操作中被停用,且由箝位器啟用電路系統115回應於重設條件而啟用,該重設條件係例如經由重設接腳或其類似者接收到信號。
The
返回參考圖2,此更詳細地繪示了安全電壓箝位器及啟用電路系統,在此情況下用於正中間電壓路徑。如先前所提及,若音訊驅動電路在高電壓模式下操作,則將啟用電壓產生器111P以產生所要正中間電壓VSAFEP且開關113P將關斷。此正中間電壓VSAFEP可被供應至選擇器112P之輸入,如上文所論述。
Referring back to FIG. 2 , this shows in more detail the safety voltage clamp and enabling circuitry, in this case for the positive mid voltage path. As previously mentioned, if the audio driver circuit is operating in the high voltage mode, the
在此類正常操作狀態下,箝位器啟用電路系統115將安全電壓箝位器114P維持於停用狀態下。
During such normal operating states, the clamp enable
箝位器啟用電路系統115包含用於監測重設條件之重設模組(POR)204,該重設條件可例如為接收到指示需要重設之重設信號RST。重設信號RST可為尤其是需要硬體重設之指示,且可自音訊驅動電路之經監測接腳或端子之狀態導出重設信號RST。POR模組204產生適當控制信號SRST以啟用或停用安全電壓箝位器114P。
The clamp enable
在此實例中,安全電壓箝位器114P包含連接於正供應電壓VPOS與中間電壓路徑之間的一系列二極體,其中串聯有箝位器啟用電晶體205。在停用狀態下,箝位器啟用電晶體205,在此情況下為PMOS,被控
制為關斷。為了啟用安全電壓箝位器114,接通箝位器啟用開關205。正供應電壓VPOS對箝位器之二極體進行正向偏壓,但橫越二極體之電壓降意指中間電壓路徑處之電壓在量值上低於供應電壓VPOS。安全電壓箝位器205經配置成提供選定電壓降,使得由箝位器在被啟用時產生之電壓可用作安全中間電壓。安全電壓箝位器205因此在被啟用時選擇性地提供將中間電壓路徑電壓箝位至安全電壓位準,以便將第一電晶體之閘極-源極電壓之量值維持為低於該容限。
In this example, the
因此,安全電壓箝位器114P在被啟用時操作以將中間電壓路徑之電壓箝位至與正供應電壓具有經界定關係之電壓,至少直至正供應電壓VPOS降至足夠低的位準為止。安全電壓箝位器可被視為可在電壓產生器111P不可用時被啟用之替代電壓產生器。便利地,由電壓箝位器在根據高電壓操作模式被啟用時提供之電壓將至少最初實質上相似於由電壓產生器111P在操作時提供之電壓。
Thus, the
當箝位器114P被停用時,箝位器啟用開關205之源極可處於或接近正供應電壓VPOS。箝位器控制開關205可由等於VPOS之閘極控制電壓維持於關斷狀態下。在此情況下,不存在顯著的閘極-源極電壓應力。為了接通箝位器啟用開關205,可將閘極電壓控制至中間電壓位準(該中間電壓位準在重設信號被接收時將可用,且一旦安全電壓箝位器114P被啟用,該中間電壓位準就將藉由安全電壓箝位器114P自身之操作來維持)。
When
為了產生此等控制電壓,可將重設控制信號SRST輸入至選擇性位準移位器,亦即位準移位電壓選擇器206。在一些實例中,選擇性位準移位器206可包含諸如圖3中所繪示及上文所論述之位準移位電壓選擇器。然而,在此情況下,至位準移位器之輸入SLS將為重設控制信號SRST。另外,為了確保選擇性位準移位器206在重設程序期間正確地操作,可自
始終可用之功率域對低功率輸入級進行供電,例如對於電池供電裝置,可自電池域對位準移位器206之輸入級進行供電。在圖2中所繪示之實例中,箝位器啟用電路系統包括諸如低壓降(LDO)調節器或其類似者之電壓調節器,其接收電池電壓VBD並提供可用以對位準移位器206進行供電之經調節電池電壓VBR,例如如圖3中之V1。經調節電池電壓VBR亦可用以對諸如POR模組204的箝位器啟用電路系統之其他組件進行供電,以便確保只要電池電壓可用,此等組件就起作用。
To generate these control voltages, the reset control signal S RST may be input to a selective level shifter, ie, the level shift voltage selector 206 . In some examples, selective level shifter 206 may include a level shifting voltage selector such as that depicted in FIG. 3 and discussed above. In this case, however, the input S LS to the level shifter will be the reset control signal S RST . Additionally, to ensure that the selective level shifter 206 operates correctly during the reset procedure, the low power input stage may be powered from an always available power domain, such as for battery powered devices, the level shifter may be powered from the battery domain The input stage of the bit 206 is powered. In the example depicted in FIG. 2, the clamp enable circuitry includes a voltage regulator, such as a low dropout (LDO) regulator or the like, that receives the battery voltage V BD and provides a voltage that can be used to shift the level The regulated battery voltage V BR powered by the controller 206 , such as V1 in FIG. 3 . The regulated battery voltage V BR may also be used to power other components of the clamp enable circuitry such as the
安全電壓箝位器114N可以相似方式操作。圖5繪示安全電壓箝位器114N之實例,安全電壓箝位器114N包括啟用開關501,在此實例中為NMOS。為了驅動啟用開關501,可使用選擇性位準移位器206N,其可例如具有如圖4中所展示之結構。至選擇性位準移位器206N之輸入SLS可為自早先關於圖2所論述之POR模組204輸出之邏輯信號SRST。
安全電壓箝位器114因此確保經產生以便在高電壓操作模式下控制音訊驅動電路之一個或多個電晶體之閘極電壓的中間電壓在音訊驅動電路經歷重設程序時保持可用。安全電壓箝位器使能夠自高電壓模式下之操作狀態安全地轉變至重設狀態且最終斷電。箝位器啟用電路系統被操作為始終可用之功率域之部分,且詳言之,可自經接收電池電壓對箝位器啟用電路系統進行供電,使得此電路系統可在重設期間正確地操作。 The safety voltage clamp 114 thus ensures that the intermediate voltage generated to control the gate voltage of one or more transistors of the audio driver circuit in the high voltage mode of operation remains available as the audio driver circuit undergoes a reset procedure. The safe voltage clamp enables a safe transition from an operating state in high voltage mode to a reset state and eventual power down. The clamp enable circuitry is operated as part of the always available power domain and, in particular, the clamp enable circuitry can be powered from the received battery voltage so that this circuitry can operate correctly during resets .
如上文所描述,在一些實施例中,正中間電壓VSAFEP及負中間電壓VSAFEN用以控制選擇器112P及112N之電晶體之閘極電壓。自選擇器112P及112N輸出之控制電壓VTP及VTN可用以控制音訊驅動電路之各種其他電晶體之操作,並將閘極-源極電壓維持於容限內。
As described above, in some embodiments, the positive intermediate voltage V SAFEP and the negative intermediate voltage V SAFEN are used to control the gate voltages of the transistors of
在一些實施方案中,由選擇器112P及112N之輸出控制之電晶體可包含輸出驅動器105之部分,例如放大器。
In some implementations, the transistors controlled by the outputs of
舉例而言,圖6繪示適合於輸出驅動器105之放大器配置之一個實例之部分。圖6繪示放大器之輸出級之至少部分,該放大器可例如經組態為具有電容回饋補償(TCFC)放大器之跨導,如將由熟習此項技術者所理解。在一些配置中,僅放大器之輸出級在高功率操作模式下接收高的正電壓VPOS及負電壓VNEG並經歷全輸出信號範圍,且因此,對於放大器之前級,電壓應力可較低。圖6繪示了:輸出PMOS電晶體601及NMOS電晶體602串聯連接於正電壓供應VPOS與負電壓供應VNEG之間,且經驅動以在放大器輸出OUT處產生驅動信號SD。自前級接收之信號INA及INB被接收並在操作中控制輸出電晶體601及602之驅動。
For example, FIG. 6 depicts part of one example of an amplifier configuration suitable for
圖6亦繪示經組態以在放大器105之斷電期間控制輸出PMOS 601之閘極電壓的電晶體603,在此實例中為PMOS。在正常操作中,電晶體603關斷,使得輸出PMOS 601由輸入信號適當地驅動以提供驅動信號SD。在放大器105之斷電期間,可能需要確保輸出PMOS 601關斷,且因此可接通電晶體603以將輸出PMOS 601之閘極端子連接至VPOS。電晶體603經組態成其源極節點耦接至正供應電壓VPOS且其汲極連接至用於輸出PMOS 601之閘極控制。電晶體603可被實施為具有增強型汲極容限之電晶體,例如諸如先前所論述之LDMOS或EDMOS,以在其關斷狀態下承受源極-汲極電壓應力。在此實例中,電晶體603之源極耦接至電壓VPOS,且因此閘極可由合適選擇器112P所輸出之控制信號VTP1控制,以在正供應電壓VPOS或正中間電壓VSAFEP之間選擇性地變化。
6 also shows a
同樣地,電晶體604,在此實例中為NMOS,耦接於負供應電壓VNEG與用於輸出NMOS 602之閘極控制之間,以便在斷電期間控制輸出NMOS 602之閘極電壓。電晶體604之源極耦接至負供應電壓VNEG,且可由合適選擇器112N所輸出之控制信號VTN1控制,以在負供應電壓VNEG
或負中間電壓VSAFEN之間選擇性地變化。
Likewise,
應注意,圖6繪示了:電晶體603及604經組態成其源極連接至各別供應電壓。當各別供應電壓為最大正及負系統電壓時可使用此配置,當在高電壓操作模式下操作時很可能為此情況。然而,若音訊驅動器電路可在該等供應電壓中之一者在量值上低於其他系統電壓中之一者的模式下操作,則可較佳的是在適當時將電晶體603或604之源極連接至此類其他系統電壓。舉例而言,若音訊驅動器電路亦可在低電壓模式下操作,在該低電壓模式下,正供應電壓低於電力供應輸入電壓VPS,則可較佳的是將電晶體603之源極耦接至電壓VPS,且電晶體603之源極可因此在不同操作模式下耦接至不同供應。然而,在一些實施例中,負供應VNEG可在所有操作模式下皆為最大量值負供應,因此電晶體604之源極可僅僅耦接至負供應電壓。
It should be noted that Figure 6 shows that
圖6亦繪示了:在輸出級周圍提供回饋之回饋路徑中存在電容CM1。此類電容器充當米勒(Miller)電容。應注意,在實際放大器中,可另外存在自輸出至一個前級之回饋(圖6中未繪示)。 Figure 6 also shows that there is a capacitor C M1 in the feedback path that provides feedback around the output stage. Such capacitors act as Miller capacitors. It should be noted that in practical amplifiers, there may additionally be feedback from the output to a preceding stage (not shown in FIG. 6 ).
可能需要能夠使輸出級回饋路徑中之米勒電容之值變化。圖6因此展示額外電容器CM2,其可選擇性地與電容器CM1並聯連接以藉由控制電晶體開關605及606而使有效米勒電容變化。再次,電晶體605及606可在高電壓操作模式下經受相對高汲極-源極電壓,且因此可被實施為LDMOS或EDMOS型裝置。PMOS電晶體605之閘極可由自選擇器112P輸出之受控信號VTP2控制,且NMOS電晶體606之閘極可由自選擇器112N輸出之受控信號VTN2控制。
It may be desirable to be able to vary the value of the Miller capacitance in the output stage feedback path. FIG. 6 thus shows an additional capacitor C M2 , which can be selectively connected in parallel with capacitor C M1 to vary the effective Miller capacitance by controlling
應理解,用於控制電晶體603(以在放大器斷電期間接通)之控制電壓VTP1應獨立於控制電壓VTP2而變化,控制電壓VTP2選擇性地控制
電晶體605以視需要在操作期間添加額外米勒電容CM2之效應。亦即,儘管信號VTP1及VTP2可在例如VPOS與VSAFEP之相同電壓位準之間變化,但此等位準之間的切換時序通常將係獨立的,且因此每一控制信號可因此由個別選擇器112P選擇性地輸出(未單獨地繪示)。
It should be understood that the control voltage VTP1 used to control transistor 603 (to turn on during amplifier power down) should vary independently of control voltage VTP2 , which selectively controls
在一些實施方案中,由選擇器112P及112N中之至少一者之輸出控制的電晶體可包含音訊驅動器電路系統之某一其他組件之部分,該組件可在高電壓操作模式下經受高電壓應力,例如輸出路徑箝位器110之電晶體。
In some implementations, the transistor controlled by the output of at least one of
圖7繪示用於輸出路徑箝位器開關之開關配置之一個實例。圖7繪示了:具有相同極性類型之兩個電晶體701及702,在此實例中為NMOS裝置,串聯耦接於箝位器之節點N1及N2之間,其中每一電晶體之源極在節點N3處耦接在一起。節點N1可耦接至輸出路徑,且節點N2可耦接至參考電壓,例如接地。當輸出路徑箝位器被停用時,電晶體701及702將處於關斷狀態。為了使此等電晶體保持關斷,即使是對於節點N1處在使用中可預期的驅動信號之峰值負值,用於電晶體701及702之閘極控制電壓C1及C2亦可在關斷狀態下等於VNEG。為了防止節點N3處之電壓變化至將造成不可接受之閘極-源極電壓的位準,由電晶體703在箝位器停用狀態下調節電壓N3。電晶體703為相同極性類型之電晶體,在此實例中為NMOS,其中電晶體之源極耦接至負供應電壓VNEG且電晶體之汲極耦接至節點N3。電晶體703可因此由如可由如上文所論述之選擇器112N產生之控制電壓VTN控制,且可在電晶體703接通時處於等於VSAFEN之電壓。在此階段中,節點N3處之電壓保持於VNEG。橫越電晶體701之源極-汲極電壓可因此隨著驅動信號而變化以實際上等於峰值至峰值電壓應力,但此峰值至峰值電壓應力處於如上文所論述之LDMOS或EDMOS之容限內。
橫越電晶體702之源極-汲極電壓等於負供應電壓VNEG之量值,其再次可處於合適LDMOS或EDMOS之容限內。在此階段中,實質上不存在橫越電晶體701及702之閘極-源極電壓應力。
Figure 7 shows one example of a switch configuration for the output path clamp switch. Figure 7 shows: two
當輸出路徑箝位器被啟用時,電晶體701及702兩者皆處於接通狀態且電晶體703關斷。電晶體703可由被選擇為VNEG之控制電壓VTN關斷。在此狀態下,無驅動信號被輸出至輸出路徑,且因此節點N1將保持為處於或接近與節點N2處之參考電壓相同的電壓,亦即兩個節點皆可處於或接近接地,節點N3亦將如此。橫越電晶體703之汲極-源極電壓因此等於負供應電壓VNEG。在此狀態下,用於電晶體701及702之控制電壓可經控制為足以接通此等電晶體但在閘極-源極容限內之正電壓,例如用於電晶體701及702之閘極電壓可在此等電晶體接通時等於電壓VPS。
When the output path clamp is enabled, both
應注意,圖6及圖7僅僅繪示了可使用由電壓產生器111產生之安全中間電壓位準控制之電晶體之一些實例。 It should be noted that FIGS. 6 and 7 only illustrate some examples of transistors that can be controlled using the safe intermediate voltage level generated by the voltage generator 111 .
儘管以上論述集中於產生可用作音訊驅動電路在高電壓操作模式下之電晶體之閘極控制電壓的中間安全電壓,但可另外或替代地有利的是產生中間安全電壓,以便調節其他電路節點處之電壓,例如半導體裝置之某一其他端子處之電壓,以免橫越半導體裝置之電壓應力大於裝置之相關電壓容限。本揭示內容之原理將適用於此類其他受保護節點,且本揭示內容係關於針對任何電壓路徑使用安全電壓箝位器,該安全電壓箝位器在重設條件時被啟用,對於該任何電壓路徑,產生了不同於供應電壓之中間電壓,且不存在中間電壓會橫越組件造成非想要的電壓應力。 Although the above discussion has focused on generating an intermediate safe voltage that can be used as a gate control voltage for a transistor in an audio driver circuit in a high voltage mode of operation, it may additionally or alternatively be advantageous to generate an intermediate safe voltage in order to regulate other circuit nodes The voltage at the device, such as the voltage at some other terminal of the semiconductor device, so that the voltage stress across the semiconductor device is not greater than the relative voltage tolerance of the device. The principles of the present disclosure will apply to such other protected nodes, and the present disclosure relates to the use of a safe voltage clamp for any voltage path that is enabled on reset conditions, for any voltage path, resulting in an intermediate voltage different from the supply voltage, and the absence of an intermediate voltage would cause undesired voltage stress across the component.
一般而言,本揭示內容之實施例因此係關於用於電壓控制之方法及設備,且尤其係關於用於音訊驅動電路系統之電壓控制。一些實施例係關於音訊驅動電路,其可在高電壓操作模式下操作,在該高電壓操作 模式下,至少一種供應電壓可足夠高,使得在使用中至少一個半導體裝置可在一個端子處經受高於裝置之電壓容限的電壓,例如電晶體之源極電壓可超過閘極-源極電壓容限。音訊電路系統亦可包括至少一個電壓產生器,當電力供應器正在高電壓操作模式下操作時,該電壓產生器可操作以產生量值小於供應電壓之量值且選擇性地施加至半導體裝置之端子的中間電壓,以便將橫越第一半導體裝置之電壓應力維持於該容限內。舉例而言,中間電壓可被選擇性地施加為用於電晶體之閘極端子之控制電壓。 Embodiments of the present disclosure therefore relate to methods and apparatus for voltage control in general, and to voltage control for audio driving circuitry in particular. Some embodiments relate to audio driver circuits that can operate in a high-voltage operating mode, where the high-voltage operation In mode, at least one supply voltage may be sufficiently high that, in use, at least one semiconductor device may experience a voltage at one terminal above the voltage tolerance of the device, for example the source voltage of a transistor may exceed the gate-source voltage tolerance. The audio circuitry may also include at least one voltage generator operable to generate a magnitude smaller than the supply voltage and selectively applied to the semiconductor device when the power supply is operating in a high voltage mode of operation. an intermediate voltage of the terminal to maintain voltage stress across the first semiconductor device within the tolerance. For example, the intermediate voltage can be selectively applied as the control voltage for the gate terminal of the transistor.
一般而言,一些實施例係關於積體電路,其具有:電壓產生器,其用於產生第一控制電壓以用作至少一個電晶體之安全閘極控制電壓;及電壓箝位器,其用於對電壓控制器之輸出進行箝位,其中電壓箝位器由用於積體電路之重設信號啟用及停用。 In general, some embodiments relate to an integrated circuit having: a voltage generator for generating a first control voltage for use as a safety gate control voltage for at least one transistor; and a voltage clamp for For clamping the output of the voltage controller, wherein the voltage clamp is enabled and disabled by a reset signal for the integrated circuit.
應注意,僅僅為了易於闡釋而作為實例給出上文所描述之任何實例電壓。其他電壓可適用於其他應用及不同半導體製造製程。舉例而言,如上文所論述,一種已知製程可提供具有大約3V左右之電壓容限的閘極氧化物。例如較小製程節點幾何結構之其他製程通常可產生不同-例如較低-電壓容限。本揭示內容之原理可經實施以提供可應對較大信號擺動、同時將閘極-源極電壓保持於容限內之音訊電路系統。 It should be noted that any example voltages described above are given as examples only for ease of explanation. Other voltages are available for other applications and different semiconductor manufacturing processes. For example, as discussed above, one known process can provide a gate oxide with a voltage tolerance on the order of 3V. Other processes, such as smaller process node geometries, can often result in different - eg, lower - voltage tolerances. The principles of the present disclosure can be implemented to provide audio circuitry that can handle large signal swings while maintaining gate-source voltages within tolerances.
已參考音訊驅動電路系統描述了實施例,但在重設的情況下產生安全電壓位準並對安全電壓位準進行箝位之原理可適用於其他應用。 Embodiments have been described with reference to audio driver circuitry, but the principles of generating and clamping a safe voltage level under reset may be applicable to other applications.
應注意,如本文中所使用,術語音訊並不限於在可聽頻率範圍內之頻率,且術語音訊應被理解為包括諸如超音波頻率之其他頻率,及/或驅動信號,諸如用於諸如線性諧振致動器或其類似者之觸覺換能器的觸覺驅動信號。 It should be noted that, as used herein, the term audio is not limited to frequencies in the audible frequency range, and the term audio should be understood to include other frequencies, such as ultrasonic frequencies, and/or drive signals, such as for linear A haptic drive signal for a haptic transducer of a resonant actuator or the like.
實施例可被實施為在一些實例中可為編解碼器或其相似者 之積體電路。實施例可併入於電子裝置中,該電子裝置可例如為攜帶型裝置及/或可用電池功率操作之裝置。該裝置可為諸如行動電話或智慧型電話或其相似者之通信裝置。該裝置可為諸如筆記型電腦、膝上型電腦或平板計算裝置之計算裝置。該裝置可為諸如智慧型手錶之可穿戴裝置。該裝置可為具有語音控制或啟動功能性之裝置。 Embodiments may be implemented as, in some instances, a codec or the like the integrated circuit. Embodiments may be incorporated into an electronic device, which may be, for example, a portable device and/or a device that can be operated on battery power. The device may be a communication device such as a mobile phone or smart phone or the like. The device may be a computing device such as a notebook, laptop or tablet computing device. The device may be a wearable device such as a smart watch. The device may be a device with voice control or activation functionality.
本領域技術人員將認識到,上述設備及方法之一些態樣,例如探索及組態方法,可被實施為處理器控制程式碼,該處理器控制程式碼例如在諸如磁碟、CD-ROM或DVD-ROM、諸如唯讀記憶體(固件)之經程式化記憶體的非揮發性載體媒體上,或在諸如光學或電信號載體之資料載體上。對於許多應用,實施例將實施於數位信號處理器(DSP)、特殊應用積體電路(ASIC)或場可程式化閘陣列(FPGA)上。因此,程式碼可包含習知程式碼或微碼,或例如用於設置或控制ASIC或FPGA之程式碼。程式碼亦可包含用於動態地組態諸如可重程式化邏輯閘陣列之可重組態設備的程式碼。相似地,程式碼可包含用於諸如VerilogTM或極高速積體電路硬體描述語言(VHDL)之硬體描述語言的程式碼。技術人員將瞭解,程式碼可分佈於彼此通信之多個經耦接組件之間。適當時,實施例亦可使用在場可(重)程式化類比陣列或相似裝置上運行之程式碼進行實施,以便組態類比硬體。 Those skilled in the art will recognize that some aspects of the above-described apparatus and methods, such as discovery and configuration methods, may be implemented as processor control code, such as on a disk, CD-ROM or On a non-volatile carrier medium such as DVD-ROM, programmed memory such as read only memory (firmware), or on a data carrier such as an optical or electrical signal carrier. For many applications, embodiments will be implemented on a digital signal processor (DSP), application specific integrated circuit (ASIC), or field programmable gate array (FPGA). Thus, the code may comprise conventional code or microcode, or code such as for setting up or controlling an ASIC or FPGA. The code may also include code for dynamically configuring a reconfigurable device such as an array of reprogrammable logic gates. Similarly, the code may include code for a hardware description language such as Verilog ™ or Very High Speed Integrated Circuit Hardware Description Language (VHDL). Skilled artisans will appreciate that code can be distributed among a number of coupled components that are in communication with each other. Where appropriate, embodiments may also be implemented using code running on a field programmable analog array or similar device to configure analog hardware.
應注意,上文所提及之實施例說明而非限制本發明,且熟習此項技術者將能夠在不脫離所附申請專利範圍之範疇的情況下設計許多替代實施例。詞「包含」不排除申請專利範圍中所列出之元件或步驟以外的元件或步驟之存在,「一」不排除多個,且單一特徵或其他單元可實現申請專利範圍中所陳述之若干單元的功能。申請專利範圍中之任何參考數字或標記不應被認作限制其範疇。 It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design many alternative embodiments without departing from the scope of the appended claims. The word "comprising" does not exclude the presence of elements or steps other than those listed in the scope of the patent application, "a" does not exclude a plurality, and a single feature or other unit may implement several of the elements stated in the scope of the patent application function. Any reference numerals or signs in the claimed scope should not be construed as limiting the scope.
100:音訊驅動電路/音訊驅動電路系統 100: Audio driver circuit/audio driver circuit system
101:主機裝置 101: Host device
102:音訊負載/擴音器 102: Audio Load/Amplifier
103:配件設備 103: Accessory Equipment
104:差分輸出數位至類比轉換器(DAC) 104: Differential Output Digital-to-Analog Converter (DAC)
105:輸出驅動器/差分輸入放大器 105: Output Driver/Differential Input Amplifier
106:電力供應模組 106: Power supply module
107:接點 107: Contact
108:連接器/虛線框 108: Connector/dotted box
109:接點 109: Contact
110:虛線框/音訊輸出路徑箝位器 110: Dotted box/Audio output path clamp
111P:正電壓產生器 111P: Positive Voltage Generator
111N:負電壓產生器 111N: Negative Voltage Generator
112P:正電壓選擇器 112P: Positive voltage selector
112N:電壓選擇器 112N: Voltage selector
113N:開關 113N: switch
113P:開關 113P: switch
114N:安全電壓箝位器 114N: Safety Voltage Clamp
114P:安全電壓箝位器 114P: Safety Voltage Clamp
115:箝位器啟用電路系統 115: Clamp enable circuitry
GND:接地 GND: ground
RST:重設信號 RST: reset signal
SD:音訊驅動信號 S D : Audio driver signal
SIN:輸入信號 S IN : input signal
SN:第二類比信號 S N : second analog signal
SP:第一類比信號 S P : first analog signal
STN:電晶體控制信號 S TN : Transistor control signal
STP:電晶體控制信號/邏輯信號 S TP : Transistor Control Signal/Logic Signal
VBD:電池電壓 V BD : battery voltage
VNEG:負供應電壓 V NEG : Negative Supply Voltage
VPOS:正供應電壓 V POS : Positive Supply Voltage
VPS:輸入電力供應電壓 V PS : Input power supply voltage
VSAFEP:正中間電壓 V SAFEP : Positive Intermediate Voltage
VSAFEN:負中間電壓 V SAFEN : Negative Intermediate Voltage
VTN:控制電壓 V TN : Control voltage
VTP:控制電壓 V TP : Control voltage
Claims (23)
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| US201962887989P | 2019-08-16 | 2019-08-16 | |
| US62/887,989 | 2019-08-16 | ||
| US16/594,794 US10855258B1 (en) | 2019-08-16 | 2019-10-07 | Voltage control |
| US16/594,794 | 2019-10-07 |
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| TW202112058A TW202112058A (en) | 2021-03-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109127239A TWI753526B (en) | 2019-08-16 | 2020-08-11 | Voltage control |
Country Status (2)
| Country | Link |
|---|---|
| GB (2) | GB2601893B (en) |
| TW (1) | TWI753526B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI865319B (en) * | 2024-01-29 | 2024-12-01 | 新唐科技股份有限公司 | Microprocessor integrated circuit operating with low voltage and method for prolonging time of battery usage |
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| TW516271B (en) * | 1998-06-12 | 2003-01-01 | Samsung Electronics Co Ltd | Power-on reset circuit for high density integrated circuit |
| US6597159B2 (en) * | 2001-08-15 | 2003-07-22 | System General Corp. | Pulse width modulation controller having frequency modulation for power converter |
| US20040032701A1 (en) * | 2002-08-16 | 2004-02-19 | Mitsuru Yoshida | Current limiting circuit and output circuit including the same |
| CN100512391C (en) * | 2004-02-04 | 2009-07-08 | 凌阳科技股份有限公司 | Reference voltage generation circuit |
| US9294598B2 (en) * | 2010-08-27 | 2016-03-22 | Semiconductor Components Industries, Llc | Switch circuit |
| US20180138797A1 (en) * | 2016-11-17 | 2018-05-17 | Richtek Technology Corporation | Power switch control circuit and open detection method thereof |
| TW201836268A (en) * | 2017-03-20 | 2018-10-01 | 大陸商萬民半導體 (澳門) 有限公司 | Controller circuit and method for generating gate drive signal thereof |
| TW201906264A (en) * | 2017-06-23 | 2019-02-01 | 美商高通公司 | Integrated transient voltage suppressor circuit |
| TWI652887B (en) * | 2016-11-23 | 2019-03-01 | 澳門商萬民半導體 (澳門) 有限公司 | Active clamp overvoltage protection control circuit and method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7719363B2 (en) * | 2008-08-01 | 2010-05-18 | Nuvoton Technology Corporation | Method and apparatus for output amplifier protection |
| JP5477407B2 (en) * | 2012-02-16 | 2014-04-23 | 株式会社デンソー | Gate drive circuit |
| US10097178B1 (en) * | 2017-06-15 | 2018-10-09 | Sunlite Science & Technology, Inc. | Isolated bidirectional high-voltage analog switch |
-
2020
- 2020-08-05 GB GB2114649.3A patent/GB2601893B/en active Active
- 2020-08-05 GB GB2012156.2A patent/GB2589183B/en active Active
- 2020-08-11 TW TW109127239A patent/TWI753526B/en active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW516271B (en) * | 1998-06-12 | 2003-01-01 | Samsung Electronics Co Ltd | Power-on reset circuit for high density integrated circuit |
| US6597159B2 (en) * | 2001-08-15 | 2003-07-22 | System General Corp. | Pulse width modulation controller having frequency modulation for power converter |
| US20040032701A1 (en) * | 2002-08-16 | 2004-02-19 | Mitsuru Yoshida | Current limiting circuit and output circuit including the same |
| CN100512391C (en) * | 2004-02-04 | 2009-07-08 | 凌阳科技股份有限公司 | Reference voltage generation circuit |
| US9294598B2 (en) * | 2010-08-27 | 2016-03-22 | Semiconductor Components Industries, Llc | Switch circuit |
| US20180138797A1 (en) * | 2016-11-17 | 2018-05-17 | Richtek Technology Corporation | Power switch control circuit and open detection method thereof |
| TWI652887B (en) * | 2016-11-23 | 2019-03-01 | 澳門商萬民半導體 (澳門) 有限公司 | Active clamp overvoltage protection control circuit and method thereof |
| TW201836268A (en) * | 2017-03-20 | 2018-10-01 | 大陸商萬民半導體 (澳門) 有限公司 | Controller circuit and method for generating gate drive signal thereof |
| TW201906264A (en) * | 2017-06-23 | 2019-02-01 | 美商高通公司 | Integrated transient voltage suppressor circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202112058A (en) | 2021-03-16 |
| GB202012156D0 (en) | 2020-09-16 |
| GB202114649D0 (en) | 2021-11-24 |
| GB2589183A (en) | 2021-05-26 |
| GB2601893B (en) | 2023-11-15 |
| GB2589183B (en) | 2021-11-24 |
| GB2601893A (en) | 2022-06-15 |
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