[go: up one dir, main page]

TWI753549B - Manufacturing method of display device and display device - Google Patents

Manufacturing method of display device and display device Download PDF

Info

Publication number
TWI753549B
TWI753549B TW109129107A TW109129107A TWI753549B TW I753549 B TWI753549 B TW I753549B TW 109129107 A TW109129107 A TW 109129107A TW 109129107 A TW109129107 A TW 109129107A TW I753549 B TWI753549 B TW I753549B
Authority
TW
Taiwan
Prior art keywords
inorganic light
emitting element
light
inorganic
defective
Prior art date
Application number
TW109129107A
Other languages
Chinese (zh)
Other versions
TW202115941A (en
Inventor
金谷康弘
Original Assignee
日商日本顯示器股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日本顯示器股份有限公司 filed Critical 日商日本顯示器股份有限公司
Publication of TW202115941A publication Critical patent/TW202115941A/en
Application granted granted Critical
Publication of TWI753549B publication Critical patent/TWI753549B/en

Links

Images

Classifications

    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

本發明之課題在於即使當發生不良之情形時,亦抑制製造之作業負荷變高並適當地顯示圖像。 本製造方法包含:檢測步驟,其自形成於形成基板200上之複數個無機發光元件102檢測不良無機發光元件102a;第1搭載步驟,其將形成於形成基板200上之無機發光元件102中之不良無機發光元件102a以外的無機發光元件102,搭載於陣列基板2上;第2搭載步驟,其將發出與不良無機發光元件102a不同顏色之光的替代無機發光元件102W,搭載於陣列基板2上;及濾光器部形成步驟,其於自來自陣列基板2上之無機發光元件102之光之行進方向觀察時,於與替代無機發光元件102W重疊之位置形成濾光器部96,該濾光器部96將來自替代無機發光元件102W之光設為與來自不良無機發光元件102a之光相同顏色之光而出射。The subject of the present invention is to appropriately display an image while suppressing an increase in the workload of manufacturing even when a defect occurs. The present manufacturing method includes: a detection step of detecting defective inorganic light-emitting elements 102 a from a plurality of inorganic light-emitting elements 102 formed on the formation substrate 200 ; The inorganic light-emitting element 102 other than the defective inorganic light-emitting element 102a is mounted on the array substrate 2; in the second mounting step, the substitute inorganic light-emitting element 102W that emits light of a different color from the defective inorganic light-emitting element 102a is mounted on the array substrate 2 and a filter portion forming step of forming a filter portion 96 at a position overlapping the replacement inorganic light emitting element 102W when viewed from the traveling direction of the light from the inorganic light emitting element 102 on the array substrate 2, the filter portion 96 The device portion 96 emits the light from the replacement inorganic light emitting element 102W as the light of the same color as the light from the defective inorganic light emitting element 102a.

Description

顯示裝置之製造方法及顯示裝置Manufacturing method of display device and display device

本發明係關於一種顯示裝置之製造方法及顯示裝置。The present invention relates to a manufacturing method of a display device and a display device.

近年來,使用微小尺寸之發光二極體(微型LED(micro LED))作為顯示元件之顯示裝置備受矚目。例如於專利文獻1,記載有藉由於發出白色光之發光二極體疊加紅色之彩色濾光器,而表現紅色之顯示裝置。 [先前技術文獻] [專利文獻]In recent years, a display device using a micro-sized light emitting diode (micro LED) as a display element has been attracting attention. For example, Patent Document 1 discloses a display device that expresses red by superimposing a red color filter on a light-emitting diode that emits white light. [Prior Art Literature] [Patent Literature]

[專利文獻1]美國專利申請案公開第2018/0206299號公報[Patent Document 1] US Patent Application Publication No. 2018/0206299

[發明所欲解決之問題][Problems to be Solved by Invention]

此處,發光二極體於例如基板上製造後,搭載於顯示裝置1之陣列基板(背板)。發光二極體有時會被製造成無法適當發光之不良品,若將此種不良品搭載於顯示裝置,則有顯示裝置無法適當顯示圖像之虞。亦可取代不良品將其他發光二極體搭載於顯示裝置,但亦有搭載步驟之作業負荷變高之情形。因此,謀求提供一種即使於製造出不良品之發光二極體之情形時,亦可抑制製造之作業負荷變高,且適當顯示圖像之顯示裝置。Here, the light-emitting diode is fabricated on, for example, a substrate, and then mounted on an array substrate (backplane) of the display device 1 . Light-emitting diodes are sometimes manufactured as defective products that cannot emit light properly, and if such defective products are mounted on a display device, there is a possibility that the display device cannot properly display an image. Other light-emitting diodes can also be mounted on the display device instead of defective products, but the workload of the mounting step may increase. Therefore, even when a defective light-emitting diode is manufactured, it is possible to suppress the increase in the manufacturing workload and to provide a display device that appropriately displays an image.

本發明係鑒於上述課題而完成者,其目的在於提供一種即使當發生不良之情形時,亦可抑制製造之作業負荷變高並適當顯示圖像之顯示裝置、及顯示裝置之製造方法。 [解決問題之技術手段]The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a display device and a method of manufacturing the display device which can suppress the increase in the manufacturing workload and appropriately display an image even when a defect occurs. [Technical means to solve problems]

本發明之一態樣之顯示裝置之製造方法係具備陣列基板及矩陣狀排列之複數個無機發光元件的顯示裝置之製造方法,且具備:檢測步驟,其自形成於形成基板上之複數個上述無機發光元件,檢測不良之上述無機發光元件即不良無機發光元件;第1搭載步驟,其將形成於上述形成基板上之上述無機發光元件中之上述不良無機發光元件以外的上述無機發光元件,搭載於上述陣列基板上;第2搭載步驟,其將發出與上述不良無機發光元件不同顏色之光的替代無機發光元件,搭載於上述陣列基板上;及濾光器部形成步驟,其於與上述替代無機發光元件重疊之位置形成濾光器部,該濾光器部將來自上述替代無機發光元件之光設為與來自上述不良無機發光元件之光相同顏色之光而出射。A method of manufacturing a display device according to one aspect of the present invention is a method of manufacturing a display device including an array substrate and a plurality of inorganic light-emitting elements arranged in a matrix, and includes a detection step, which is formed from a plurality of the above-mentioned inorganic light-emitting elements formed on the forming substrate. Inorganic light-emitting element, the inorganic light-emitting element that has been detected as defective is a defective inorganic light-emitting element; and a first mounting step, which mounts the inorganic light-emitting element other than the defective inorganic light-emitting element among the inorganic light-emitting elements formed on the formation substrate. on the above-mentioned array substrate; a second mounting step of mounting a substitute inorganic light-emitting element that emits light of a different color from the defective inorganic light-emitting element on the above-mentioned array substrate; and a filter portion forming step, which is performed in the same manner as the above-mentioned substitute inorganic light-emitting element The position where the inorganic light emitting elements are overlapped forms a filter portion that emits light from the replacement inorganic light emitting element as light of the same color as the light from the defective inorganic light emitting element.

本發明之一態樣之顯示裝置係具備矩陣狀排列之複數個無機發光元件之顯示裝置,複數個上述無機發光元件包含:無機發光元件,其發出特定顏色之光;及替代無機發光元件,其發出與上述特定顏色之光不同顏色之光;且上述顯示裝置設置濾光器部,該濾光器部設置於與上述替代無機發光元件重疊之位置,將來自上述替代無機發光元件之光設為與上述特定顏色之光相同顏色之光而出射。A display device according to an aspect of the present invention is a display device including a plurality of inorganic light-emitting elements arranged in a matrix, and the plurality of inorganic light-emitting elements include: an inorganic light-emitting element that emits light of a specific color; and an alternative inorganic light-emitting element that Emits light of a different color from the light of the specific color; and the display device is provided with a filter portion, the filter portion is arranged in a position overlapping with the substitute inorganic light emitting element, and the light from the substitute inorganic light emitting element is set as The light of the same color as the light of the above-mentioned specific color is emitted.

於以下,對本發明之各實施形態,參照圖式予以說明。另,揭示係僅為一例,關於本領域技術人員可容易想到確保發明主旨之適當變更者,當然包含於本發明之範圍內。又,圖式係為了使說明更明確,而與實際態樣相比,存在模式性顯示各部之寬度、厚度、形狀等之情形,但僅為一例,並非限定本發明之解釋。又,於本說明書與各圖中,對與針對已出現之圖上述者相同之要件,標註相同符號,且有時適當省略詳細說明。Hereinafter, each embodiment of the present invention will be described with reference to the drawings. In addition, the disclosure is merely an example, and those skilled in the art can easily conceive of appropriate modifications to ensure the gist of the invention, and are of course included in the scope of the present invention. In addition, in order to clarify the description, the drawings may schematically show the width, thickness, shape, etc. of each part compared with the actual state, but this is only an example and is not intended to limit the interpretation of the present invention. In addition, in this specification and each drawing, the same code|symbol is attached|subjected to the same element as the one mentioned above with respect to the drawing which appeared, and a detailed description may be abbreviate|omitted suitably.

(顯示裝置之構成) 圖1係顯示本實施形態之顯示裝置之構成例之俯視圖。如圖1所示,顯示裝置1包含陣列基板2、像素Pix、驅動電路12、驅動IC(Integrated Circuit:積體電路)210、及陰極配線60。陣列基板2係用於驅動各像素Pix之驅動電路基板,亦稱為背板或主動矩陣基板。陣列基板2具有基板10、複數個電晶體、複數個電容及各種配線等。(Configuration of display device) FIG. 1 is a plan view showing a configuration example of the display device of the present embodiment. As shown in FIG. 1 , the display device 1 includes an array substrate 2 , pixels Pix, a driving circuit 12 , a driving IC (Integrated Circuit) 210 , and a cathode wiring 60 . The array substrate 2 is a driving circuit substrate for driving each pixel Pix, and is also called a backplane or an active matrix substrate. The array substrate 2 includes a substrate 10 , a plurality of transistors, a plurality of capacitors, various wirings, and the like.

如圖1所示,顯示裝置1具有顯示區域AA、與周邊區域GA。顯示區域AA係配置有複數個像素Pix之區域,即顯示圖像之區域。周邊區域GA係不與複數個像素Pix重疊之區域,且配置於顯示區域AA之外側。As shown in FIG. 1 , the display device 1 has a display area AA and a peripheral area GA. The display area AA is an area where a plurality of pixels Pix are arranged, that is, an area where an image is displayed. The peripheral area GA is an area that does not overlap with the plurality of pixels Pix, and is disposed outside the display area AA.

複數個像素Pix於基板10之顯示區域AA中,排列於第1方向Dx及第2方向Dy。另,第1方向Dx及第2方向Dy係相對於陣列基板2之基板10之第1面10a(參照圖4)平行之方向。第1方向Dx與第2方向Dy正交。但,第1方向Dx亦可不與第2方向Dy正交而交叉。第3方向Dz係與第1方向Dx及第2方向Dy正交之方向。第3方向Dz對應於例如基板10之法線方向。以下,俯視表示自第3方向Dz觀察之情形之位置關係。A plurality of pixels Pix are arranged in the first direction Dx and the second direction Dy in the display area AA of the substrate 10 . In addition, the first direction Dx and the second direction Dy are directions parallel to the first surface 10 a (see FIG. 4 ) of the substrate 10 of the array substrate 2 . The first direction Dx is orthogonal to the second direction Dy. However, the first direction Dx may not intersect the second direction Dy at right angles. The third direction Dz is a direction orthogonal to the first direction Dx and the second direction Dy. The third direction Dz corresponds to, for example, the normal direction of the substrate 10 . Hereinafter, the plan view shows the positional relationship of the state viewed from the third direction Dz.

驅動電路12設置於基板10之周邊區域GA。驅動電路12係基於來自驅動IC210之各種控制信號驅動複數根閘極線(例如發光控制掃描線BG、重設控制掃描線RG、初始化控制掃描線IG及寫入控制掃描線SG(參照圖3))之電路。驅動電路12依序或同時選擇複數根閘極線,對經選擇之閘極線供給閘極驅動信號。藉此,驅動電路12選擇連接於閘極線之複數個像素Pix。The driving circuit 12 is disposed in the peripheral area GA of the substrate 10 . The driving circuit 12 drives a plurality of gate lines (eg, the light emission control scan line BG, the reset control scan line RG, the initialization control scan line IG, and the write control scan line SG (see FIG. 3 ) based on various control signals from the drive IC 210 . ) circuit. The driving circuit 12 selects a plurality of gate lines sequentially or simultaneously, and supplies gate driving signals to the selected gate lines. Thereby, the driving circuit 12 selects a plurality of pixels Pix connected to the gate lines.

驅動IC210係控制顯示裝置1之顯示之電路。驅動IC210可作為COG(Chip On Glass:玻璃覆晶)安裝於基板10之周邊區域GA。不限定於此,驅動IC210亦可作為COF(Chip On Film:薄膜覆晶)安裝於基板10之周邊區域GA所連接之配線基板之上。另,連接於基板10之配線基板係例如可撓性印刷基板(FPC(Flexible Printed Circuit)基板)或硬性基板(PCB(Printed Circuit Board:印刷電路板)基板)。The driving IC 210 is a circuit for controlling the display of the display device 1 . The driving IC 210 may be mounted on the peripheral area GA of the substrate 10 as a COG (Chip On Glass: chip on glass). Not limited to this, the driver IC 210 may also be mounted on the wiring substrate connected to the peripheral area GA of the substrate 10 as a COF (Chip On Film). In addition, the wiring board connected to the board|substrate 10 is, for example, a flexible printed circuit board (FPC (Flexible Printed Circuit) board) or a rigid board (PCB (Printed Circuit Board: printed circuit board) board).

陰極配線60設置於基板10之周邊區域GA。陰極配線60包圍顯示區域AA之複數個像素Pix及周邊區域GA之驅動電路12而設置。複數個無機發光體100(參照圖4)之陰極(陰極電極114(參照圖4))連接於共通之陰極配線60,並被供給固定電位(例如,接地電位)。更具體而言,無機發光體100之陰極電極114經由陣列基板2上之對向陰極電極90e,連接於陰極配線60。另,陰極配線60亦可於一部分具有狹槽,並於基板10上,以2根不同之配線形成。The cathode wiring 60 is provided in the peripheral area GA of the substrate 10 . The cathode wiring 60 is provided to surround the plurality of pixels Pix in the display area AA and the driving circuit 12 in the peripheral area GA. The cathodes (cathode electrodes 114 (see FIG. 4 )) of the plurality of inorganic light-emitting bodies 100 (see FIG. 4 ) are connected to the common cathode wiring 60 and supplied with a fixed potential (eg, ground potential). More specifically, the cathode electrode 114 of the inorganic light-emitting body 100 is connected to the cathode wiring 60 via the opposite cathode electrode 90 e on the array substrate 2 . In addition, the cathode wiring 60 may have a slit in a part, and may be formed by two different wirings on the substrate 10 .

圖2係顯示複數個像素之俯視圖。如圖2所示,1個像素Pix包含複數個像素49。例如像素Pix具有第1像素49R、第2像素49G、及第3像素49B。第1像素49R顯示作為第1顏色之原色之紅色。第2像素49G顯示作為第2顏色之原色之綠色。第3像素49B顯示作為第3顏色之原色之藍色。如圖2所示,於1個像素Pix中,第1像素49R與第3像素49B排列於第1方向Dx。又,第2像素49G與第3像素49B排列於第2方向Dy。另,第1顏色、第2顏色、第3顏色不分別限定於紅色、綠色、及藍色,亦可選擇補色等任意顏色。以下,於無需分別區分第1像素49R、第2像素49G、及第3像素49B之情形時,稱為像素49。另,1個像素Pix所包含之像素49不限定於3個,亦可將4個以上之像素49建立對應。又,複數個像素49之配置不限定於圖2所示之構成。例如,第1像素49R亦可與第2像素49G在第1方向Dx上相鄰。又,第1像素49R、第2像素49G、及第3像素49B亦可以該順序重複排列於第1方向Dx。FIG. 2 is a top view showing a plurality of pixels. As shown in FIG. 2 , one pixel Pix includes a plurality of pixels 49 . For example, the pixel Pix has a first pixel 49R, a second pixel 49G, and a third pixel 49B. The first pixel 49R displays red, which is the primary color of the first color. The second pixel 49G displays green as the primary color of the second color. The third pixel 49B displays blue which is the primary color of the third color. As shown in FIG. 2 , in one pixel Pix, the first pixel 49R and the third pixel 49B are arranged in the first direction Dx. In addition, the second pixel 49G and the third pixel 49B are arranged in the second direction Dy. In addition, the first color, the second color, and the third color are not limited to red, green, and blue, respectively, and arbitrary colors such as complementary colors may be selected. Hereinafter, when it is not necessary to distinguish the first pixel 49R, the second pixel 49G, and the third pixel 49B, it is referred to as the pixel 49 . In addition, the number of pixels 49 included in one pixel Pix is not limited to three, and four or more pixels 49 may be associated with each other. In addition, the arrangement of the plurality of pixels 49 is not limited to the configuration shown in FIG. 2 . For example, the first pixel 49R may be adjacent to the second pixel 49G in the first direction Dx. In addition, the first pixel 49R, the second pixel 49G, and the third pixel 49B may be repeatedly arranged in the first direction Dx in this order.

像素49各自具備具有無機發光元件102之無機發光體100。顯示裝置1藉由於第1像素49R、第2像素49G及第3像素49B中,對每個無機發光體100出射不同之光而顯示圖像。無機發光體100係俯視下具有數μm以上、300 μm以下左右之大小之無機發光二極體(LED:Light Emitting Diode)晶片,一般而言,將1個晶片尺寸為100 μm以上者稱為迷你LED(miniLED)、將不足100 μm~數μm之尺寸者稱為微型LED(micro LED)。於本發明中,亦可使用任意尺寸之LED,只要根據顯示裝置之畫面尺寸(一像素之大小)分開使用即可。於各像素具備微型LED(micro LED)之顯示裝置亦稱為微型LED顯示裝置。另,微型LED之微型並非限定無機發光體100之大小者。Each of the pixels 49 includes the inorganic light-emitting body 100 having the inorganic light-emitting element 102 . The display device 1 displays an image by emitting different light for each inorganic light-emitting body 100 in the first pixel 49R, the second pixel 49G, and the third pixel 49B. The inorganic light-emitting body 100 is an inorganic light-emitting diode (LED: Light Emitting Diode) chip having a size of several μm or more and 300 μm or less in a plan view. Generally speaking, a chip with a size of 100 μm or more is called a miniature chip. LEDs (miniLEDs), those with a size of less than 100 μm to several μm are called micro LEDs (micro LEDs). In the present invention, LEDs of any size can also be used, as long as they are used separately according to the screen size (size of one pixel) of the display device. A display device having a micro LED (micro LED) in each pixel is also called a micro LED display device. In addition, the micro size of the micro LED is not limited to the size of the inorganic light-emitting body 100 .

圖3係顯示顯示裝置之像素電路之構成例之電路圖。圖3所示之像素電路PICA設置於第1像素49R、第2像素49G及第3像素49B之各者。像素電路PICA係設置於基板10,並將驅動信號(電流)供給至無機發光體100之電路。另,於圖3中,關於像素電路PICA之說明可應用於第1像素49R、第2像素49G及第3像素49B各自具有之像素電路PICA。FIG. 3 is a circuit diagram showing a configuration example of a pixel circuit of a display device. The pixel circuit PICA shown in FIG. 3 is provided in each of the first pixel 49R, the second pixel 49G, and the third pixel 49B. The pixel circuit PICA is disposed on the substrate 10 and supplies the driving signal (current) to the circuit of the inorganic light-emitting body 100 . In addition, in FIG. 3, the description about the pixel circuit PICA can be applied to the pixel circuit PICA which each of the 1st pixel 49R, the 2nd pixel 49G, and the 3rd pixel 49B has.

如圖3所示,像素電路PICA包含無機發光體100、5個電晶體、及2個電容。具體而言,像素電路PICA包含發光控制電晶體BCT、初始化電晶體IST、寫入電晶體SST、重設電晶體RST及驅動電晶體DRT。一部分電晶體可由相鄰之複數個像素49共用。例如,發光控制電晶體BCT亦可經由共通配線,由3個像素49共用。又,重設電晶體RST亦可設置於周邊區域GA,例如於像素49之各列設置1個。於此情形時,重設電晶體RST經由共通配線連接於複數個驅動電晶體DRT之源極。As shown in FIG. 3 , the pixel circuit PICA includes an inorganic light-emitting body 100 , five transistors, and two capacitors. Specifically, the pixel circuit PICA includes a light emission control transistor BCT, an initialization transistor IST, a write transistor SST, a reset transistor RST, and a drive transistor DRT. A part of the transistors can be shared by a plurality of adjacent pixels 49 . For example, the light emission control transistor BCT may be shared by the three pixels 49 via a common wiring. In addition, the reset transistor RST may also be disposed in the peripheral area GA, for example, one in each column of the pixel 49 . In this case, the reset transistor RST is connected to the sources of the plurality of driving transistors DRT through the common wiring.

像素電路PICA具有之複數個電晶體分別由n型TFT(Thin Film Transistor:薄膜電晶體)構成。但,不限定於此,各電晶體亦可分別由p型TFT構成。於使用p型TFT之情形時,亦可適當地使電源電位或保持電容Cs1及電容Cs2之連接適合化。The plurality of transistors included in the pixel circuit PICA are each constituted by an n-type TFT (Thin Film Transistor). However, it is not limited to this, and each transistor may be constituted by a p-type TFT, respectively. In the case of using a p-type TFT, the power supply potential or the connection of the holding capacitor Cs1 and the capacitor Cs2 can be appropriately adapted.

發光控制掃描線BG連接於發光控制電晶體BCT之閘極。初始化控制掃描線IG連接於初始化電晶體IST之閘極。寫入控制掃描線SG連接於寫入電晶體SST之閘極。重設控制掃描線RG連接於重設電晶體RST之閘極。The light-emitting control scan line BG is connected to the gate of the light-emitting control transistor BCT. The initialization control scan line IG is connected to the gate of the initialization transistor IST. The write control scan line SG is connected to the gate of the write transistor SST. The reset control scan line RG is connected to the gate of the reset transistor RST.

發光控制掃描線BG、初始化控制掃描線IG、寫入控制掃描線SG及重設控制掃描線RG分別連接於驅動電路12(參照圖1)。驅動電路12分別對發光控制掃描線BG、初始化控制掃描線IG、寫入控制掃描線SG及重設控制掃描線RG供給發光控制信號Vbg、初始化控制信號Vig、寫入控制信號Vsg及重設控制信號Vrg。The light emission control scan line BG, the initialization control scan line IG, the write control scan line SG, and the reset control scan line RG are respectively connected to the driving circuit 12 (see FIG. 1 ). The drive circuit 12 supplies the light emission control signal Vbg, the initialization control signal Vig, the write control signal Vsg, and the reset control to the light emission control scan line BG, the initialization control scan line IG, the write control scan line SG, and the reset control scan line RG, respectively. signal Vrg.

驅動IC210(參照圖1)分時對第1像素49R、第2像素49G及第3像素49B之各個像素電路PICA供給影像信號Vsig。於第1像素49R、第2像素49G及第3像素49B之各行、與驅動IC210之間,設置有多工器等開關電路。影像信號Vsig經由影像信號線L2供給至寫入電晶體SST。又,驅動IC210經由重設信號線L3,將重設電源電位Vrst供給至重設電晶體RST。驅動IC210經由初始化信號線L4,將初始化電位Vini供給至初始化電晶體IST。The drive IC 210 (see FIG. 1 ) supplies the video signal Vsig to each of the pixel circuits PICA of the first pixel 49R, the second pixel 49G, and the third pixel 49B in a time-divisional manner. A switch circuit such as a multiplexer is provided between each row of the first pixel 49R, the second pixel 49G, and the third pixel 49B, and the driver IC 210 . The video signal Vsig is supplied to the write transistor SST via the video signal line L2. Further, the drive IC 210 supplies the reset power supply potential Vrst to the reset transistor RST via the reset signal line L3. The drive IC 210 supplies the initialization potential Vini to the initialization transistor IST via the initialization signal line L4.

發光控制電晶體BCT、初始化電晶體IST、寫入電晶體SST、及重設電晶體RST作為選擇2節點間之導通與非導通之開關元件發揮功能。驅動電晶體DRT作為根據閘極與汲極之間之電壓,控制無機發光體100中流通之電流之電流控制元件發揮功能。The light emission control transistor BCT, the initialization transistor IST, the write transistor SST, and the reset transistor RST function as switching elements for selecting conduction and non-conduction between the two nodes. The driving transistor DRT functions as a current control element that controls the current flowing in the inorganic light-emitting body 100 according to the voltage between the gate and the drain.

無機發光體100之陰極(陰極電極114)連接於陰極電源線L10。又,無機發光體100之陽極(陽極電極112)經由驅動電晶體DRT及發光控制電晶體BCT連接於陽極電源線L1(第1電源線)。對陽極電源線L1,供給陽極電源電位PVDD(第1電位)。對陰極電源線L10,供給陰極電源電位PVSS(第2電位)。陽極電源電位PVDD係高於陰極電源電位PVSS之電位。陰極電源線L10包含陰極配線60。The cathode (cathode electrode 114) of the inorganic light-emitting body 100 is connected to the cathode power supply line L10. In addition, the anode (anode electrode 112) of the inorganic light-emitting body 100 is connected to the anode power supply line L1 (first power supply line) via the drive transistor DRT and the light emission control transistor BCT. The anode power supply potential PVDD (first potential) is supplied to the anode power supply line L1. The cathode power supply potential PVSS (second potential) is supplied to the cathode power supply line L10. The anode power supply potential PVDD is higher than the cathode power supply potential PVSS. The cathode power supply line L10 includes the cathode wiring 60 .

又,像素電路PICA包含電容Cs1及電容Cs2。電容Cs1係形成於驅動電晶體DRT之閘極與源極之間之保持電容。電容Cs2係形成於驅動電晶體DRT之源極及無機發光體100之陽極、與陰極電源線L10之間之附加電容。In addition, the pixel circuit PICA includes a capacitor Cs1 and a capacitor Cs2. The capacitor Cs1 is a holding capacitor formed between the gate electrode and the source electrode of the driving transistor DRT. The capacitor Cs2 is an additional capacitor formed between the source electrode of the driving transistor DRT, the anode electrode of the inorganic light-emitting body 100, and the cathode power supply line L10.

顯示裝置1對第1列像素49至最終列像素49進行驅動而於1訊框期間顯示1訊框量之圖像。The display device 1 drives the first row of pixels 49 to the last row of pixels 49 to display an image corresponding to one frame during one frame period.

於重設期間,藉由自驅動電路12供給之各控制信號,發光控制掃描線BG之電位為L(低)位準,重設控制掃描線RG之電位為H(高)位準。藉此,發光控制電晶體BCT斷開(非導通狀態),重設電晶體RST接通(導通狀態)。During the reset period, the potential of the light emission control scan line BG is at L (low) level, and the potential of the reset control scan line RG is at H (high) level by the control signals supplied from the driving circuit 12 . Thereby, the light emission control transistor BCT is turned off (non-conducting state), and the reset transistor RST is turned on (conducting state).

於重設期間,藉由自驅動電路12供給之各控制信號,發光控制掃描線BG之電位為L(低)位準,重設控制掃描線RG之電位為H(高)位準。藉此,發光控制電晶體BCT斷開(非導通狀態),重設電晶體RST接通(導通狀態)。During the reset period, the potential of the light emission control scan line BG is at L (low) level, and the potential of the reset control scan line RG is at H (high) level by the control signals supplied from the driving circuit 12 . Thereby, the light emission control transistor BCT is turned off (non-conducting state), and the reset transistor RST is turned on (conducting state).

藉此,殘留於像素49內之電荷通過重設電晶體RST流至外部,且驅動電晶體DRT之源極固定為重設電源電位Vrst。重設電源電位Vrst設定為相對於陰極電源電位PVSS具有特定之電位差。於此情形時,重設電源電位Vrst與陰極電源電位PVSS之電位差小於無機發光體100開始發光之電位差。Thereby, the electric charge remaining in the pixel 49 flows to the outside through the reset transistor RST, and the source of the drive transistor DRT is fixed to the reset power supply potential Vrst. The reset power supply potential Vrst is set to have a specific potential difference with respect to the cathode power supply potential PVSS. In this case, the potential difference between the reset power supply potential Vrst and the cathode power supply potential PVSS is smaller than the potential difference at which the inorganic light-emitting body 100 starts to emit light.

其次,藉由自驅動電路12供給之各控制信號,初始化控制掃描線IG之電位為H位準。初始化電晶體IST接通。經由初始化電晶體IST,驅動電晶體DRT之閘極被固定為初始化電位Vini。Next, the potential of the control scan line IG is initialized to the H level by each control signal supplied from the drive circuit 12 . The initialization transistor IST is turned on. Through the initialization transistor IST, the gate of the driving transistor DRT is fixed to the initialization potential Vini.

又,驅動電路12將發光控制電晶體BCT設為接通,並將重設電晶體RST設為斷開。若源極電位變為(Vini-Vth),則驅動電晶體DRT斷開。藉此,可對每個像素49取得驅動電晶體DRT之閾值電壓Vth,並補償每個像素49之閾值電壓Vth之偏差。In addition, the drive circuit 12 turns on the light emission control transistor BCT and turns off the reset transistor RST. When the source potential becomes (Vini-Vth), the driving transistor DRT is turned off. Thereby, the threshold voltage Vth of the driving transistor DRT can be obtained for each pixel 49 and the deviation of the threshold voltage Vth of each pixel 49 can be compensated.

其次,於影像信號寫入動作期間,藉由自驅動電路12供給之各控制信號,發光控制電晶體BCT斷開,初始化電晶體IST斷開,寫入電晶體SST接通。於屬於1列之像素49中,將影像信號Vsig輸入至驅動電晶體DRT之閘極。影像信號線L2沿第2方向Dy延伸,並連接於屬於同行之複數列像素49。因此,對每1列實施影像信號寫入動作期間。Next, during the video signal writing operation period, the light-emitting control transistor BCT is turned off, the initialization transistor IST is turned off, and the writing transistor SST is turned on by each control signal supplied from the driving circuit 12 . In the pixels 49 belonging to one column, the video signal Vsig is input to the gate of the driving transistor DRT. The video signal line L2 extends along the second direction Dy, and is connected to a plurality of rows of pixels 49 belonging to the same row. Therefore, the video signal writing operation period is performed for each column.

其次,於發光動作期間,藉由自驅動電路12供給之各控制信號,發光控制電晶體BCT接通,寫入電晶體SST斷開。自陽極電源線L1經由發光控制電晶體BCT對驅動電晶體DRT供給陽極電源電位PVDD。驅動電晶體DRT將對應於閘極源極間之電壓之電流供給至無機發光體100。無機發光體100以對應於該電流之亮度發光。Next, during the light-emitting operation period, the light-emitting control transistor BCT is turned on and the writing transistor SST is turned off by the respective control signals supplied from the driving circuit 12 . The anode power supply potential PVDD is supplied to the drive transistor DRT from the anode power supply line L1 via the light emission control transistor BCT. The driving transistor DRT supplies a current corresponding to the voltage between the gate and the source to the inorganic light-emitting body 100 . The inorganic light-emitting body 100 emits light with a brightness corresponding to the current.

另,驅動電路12可對每1列驅動像素49,可同時驅動2列像素49,亦可同時驅動3列量以上之像素49。In addition, the driving circuit 12 can drive the pixels 49 for every one column, simultaneously drive the pixels 49 in two columns, or simultaneously drive the pixels 49 in three or more columns.

另,上述之圖3所示之像素電路PICA之構成僅為一例,可適當變更。例如1個像素49之配線數量及電晶體數量亦可不同。又,像素電路PICA亦可採用電流鏡電路等構成。In addition, the structure of the pixel circuit PICA shown in FIG. 3 mentioned above is only an example, and it can change suitably. For example, the number of wirings and the number of transistors in one pixel 49 may be different. In addition, the pixel circuit PICA may be constituted by a current mirror circuit or the like.

圖4係圖1之IV-IV’剖視圖。如圖4所示,顯示裝置1之陣列基板2具備基板10、與複數個電晶體。基板10具有第1面10a、與第1面10a相反側之第2面10b。基板10係絶縁基板,例如玻璃基板、石英基板、或丙烯樹脂、環氧樹脂、聚醯亞胺樹脂、或聚對苯二甲酸乙二酯(PET)樹脂製之可撓性基板。Fig. 4 is a cross-sectional view taken along line IV-IV' of Fig. 1 . As shown in FIG. 4 , the array substrate 2 of the display device 1 includes a substrate 10 and a plurality of transistors. The board|substrate 10 has the 1st surface 10a, and the 2nd surface 10b on the opposite side to the 1st surface 10a. The substrate 10 is an insulating substrate, such as a glass substrate, a quartz substrate, or a flexible substrate made of acrylic resin, epoxy resin, polyimide resin, or polyethylene terephthalate (PET) resin.

另,於本說明書中,於與基板10之表面垂直之方向上,將自基板10朝向無機發光體100之方向設為「上側」或簡設為「上」。又,將自無機發光體100朝向基板10之方向設為「下側」或簡設為「下」。又,表現於某構造體之上配置其他構造體之態樣時,僅表述為「上」之情形時,只要無特別說明,則包含以與某構造體相接之方式,於正上方配置其他構造體之情形、與於某構造體之上方,進而介隔另一構造體配置其他構造體之情形之兩者。In addition, in this specification, in the direction perpendicular to the surface of the substrate 10, the direction from the substrate 10 toward the inorganic light-emitting body 100 is referred to as "upper side" or simply referred to as "upper side". In addition, the direction from the inorganic light-emitting body 100 toward the substrate 10 is referred to as "lower side" or simply referred to as "downward". In addition, when expressing the state of arranging other structures on top of a certain structure, when it is only expressed as "on", unless otherwise specified, it includes the way of connecting with a certain structure and arranging other structures directly above Both the case of a structure and the case of arranging other structures above a structure with another structure in between.

底塗層20設置於基板10之第1面10a上。複數個電晶體設置於底塗層20上。例如,於基板10之顯示區域AA,作為複數個電晶體,分別設置有像素49所包含之驅動電晶體DRT及寫入電晶體SST。於基板10之周邊區域GA,作為複數個電晶體,設置有驅動電路12所包含之電晶體TrC。另,雖顯示複數個電晶體中之驅動電晶體DRT、寫入電晶體SST、及電晶體TrC,但像素電路PICA所包含之發光控制電晶體BCT、初始化電晶體IST及重設電晶體RST亦具有與驅動電晶體DRT同樣之積層構造。另,於以下之說明中,於無需區分說明複數個電晶體之情形時,僅顯示為電晶體Tr。The primer layer 20 is provided on the first surface 10 a of the substrate 10 . A plurality of transistors are provided on the undercoat layer 20 . For example, in the display area AA of the substrate 10 , as a plurality of transistors, the driving transistor DRT and the writing transistor SST included in the pixel 49 are respectively provided. In the peripheral area GA of the substrate 10, as a plurality of transistors, the transistors TrC included in the driving circuit 12 are provided. In addition, although the driving transistor DRT, the writing transistor SST, and the transistor TrC among the plurality of transistors are shown, the light-emitting control transistor BCT, the initialization transistor IST, and the reset transistor RST included in the pixel circuit PICA are also It has the same multilayer structure as the drive transistor DRT. In addition, in the following description, when there is no need to distinguish and describe a plurality of transistors, only the transistor Tr is shown.

電晶體Tr係例如兩面閘極構造之TFT。電晶體Tr各自具有第1閘極電極21、第2閘極電極31、半導體層25、源極電極41s、及汲極電極41d。第1閘極電極21設置於底塗層20上。絕緣膜24設置於底塗層20上並覆蓋第1閘極電極21。半導體層25設置於絕緣膜24上。半導體層25使用例如多晶矽。但,半導體層25不限定於此,亦可為微晶氧化物半導體、非晶氧化物半導體、及低溫多晶矽等。絕緣膜29設置於半導體層25上。第2閘極電極31設置於絕緣膜29上。The transistor Tr is, for example, a TFT having a double-sided gate structure. Each of the transistors Tr has a first gate electrode 21, a second gate electrode 31, a semiconductor layer 25, a source electrode 41s, and a drain electrode 41d. The first gate electrode 21 is provided on the undercoat layer 20 . The insulating film 24 is provided on the primer layer 20 and covers the first gate electrode 21 . The semiconductor layer 25 is provided on the insulating film 24 . The semiconductor layer 25 uses, for example, polysilicon. However, the semiconductor layer 25 is not limited to this, and may be a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, a low temperature polysilicon, or the like. The insulating film 29 is provided on the semiconductor layer 25 . The second gate electrode 31 is provided on the insulating film 29 .

底塗層20、絕緣膜24、29、45係無機絕緣膜,包含例如氧化矽(SiO2 )或氮化矽(SiN)等。於第3方向Dz上,第1閘極電極21與第2閘極電極31介隔絕緣膜24、半導體層25及絕緣膜29對向。於絕緣膜24、29中,第1閘極電極21與第2閘極電極31所夾之部分作為閘極絕緣膜發揮功能。又,於半導體層25中,第1閘極電極21與第2閘極電極31所夾之部分成為電晶體Tr之通道區域27。於半導體層25中,與源極電極41s連接之部分係電晶體Tr之源極區域,與汲極電極41d連接之部分係電晶體Tr之汲極區域。於通道區域27與源極區域之間及通道區域27與汲極區域之間,分別設置有低濃度雜質區域。另,作為電晶體Tr,雖僅顯示n型TFT,但亦可同時形成p型TFT。The undercoat layer 20 and the insulating films 24, 29, and 45 are inorganic insulating films, including, for example, silicon oxide (SiO 2 ) or silicon nitride (SiN). In the third direction Dz, the first gate electrode 21 and the second gate electrode 31 face each other with the insulating film 24 , the semiconductor layer 25 and the insulating film 29 interposed therebetween. In the insulating films 24 and 29, the portion sandwiched between the first gate electrode 21 and the second gate electrode 31 functions as a gate insulating film. In addition, in the semiconductor layer 25, the portion sandwiched between the first gate electrode 21 and the second gate electrode 31 becomes the channel region 27 of the transistor Tr. In the semiconductor layer 25, the part connected to the source electrode 41s is the source region of the transistor Tr, and the part connected to the drain electrode 41d is the drain region of the transistor Tr. Low-concentration impurity regions are respectively provided between the channel region 27 and the source region and between the channel region 27 and the drain region. Also, as the transistor Tr, only n-type TFTs are shown, but p-type TFTs may be formed at the same time.

閘極線31a連接於驅動電晶體DRT之第2閘極電極31。於基板10與閘極線31a之間設置有絕緣膜29,於閘極線31a與基板10之間形成有電容CS。第1閘極電極21、第2閘極電極31及閘極線31a由例如鋁(Al)、銅(Cu)、銀(Ag)、鉬(Mo)或該等合金膜構成。The gate line 31a is connected to the second gate electrode 31 of the driving transistor DRT. An insulating film 29 is provided between the substrate 10 and the gate line 31 a , and a capacitor CS is formed between the gate line 31 a and the substrate 10 . The first gate electrode 21, the second gate electrode 31, and the gate line 31a are formed of, for example, aluminum (Al), copper (Cu), silver (Ag), molybdenum (Mo), or an alloy film of these.

於本實施形態中,電晶體Tr並非限定於兩面閘極構造者。電晶體Tr可為僅由第1閘極電極21構成閘極電極之底部閘極型。又,電晶體Tr亦可為僅由第2閘極電極31構成閘極電極之頂部閘極型。又,亦可無底塗層20。In the present embodiment, the transistor Tr is not limited to a double-sided gate structure. The transistor Tr may be a bottom gate type in which only the first gate electrode 21 constitutes a gate electrode. In addition, the transistor Tr may be a top gate type in which only the second gate electrode 31 constitutes a gate electrode. In addition, the primer layer 20 may not be provided.

顯示裝置1具有設置於基板10之第1面10a上並覆蓋複數個電晶體Tr之絕緣膜35。源極電極41s設置於絕緣膜35上,並經由設置於絕緣膜35之貫通孔連接於複數個電晶體Tr之各源極。汲極電極41d設置於絕緣膜35上,經由設置於絕緣膜35之貫通孔連接於複數個電晶體Tr之各汲極。於周邊區域GA中,陰極配線60設置於絕緣膜35上。絕緣膜42覆蓋源極電極41s、汲極電極41d及陰極配線60。絕緣膜35係無機絕緣膜,絕緣膜42係有機絕緣膜。源極電極41s及汲極電極41d由鈦與鋁之積層構造即TiAlTi或TiAl之積層膜構成。又,絕緣膜42使用感光性丙烯等有機材料。The display device 1 has an insulating film 35 disposed on the first surface 10a of the substrate 10 and covering a plurality of transistors Tr. The source electrode 41 s is provided on the insulating film 35 , and is connected to the respective sources of the plurality of transistors Tr through through holes provided in the insulating film 35 . The drain electrode 41 d is provided on the insulating film 35 , and is connected to the drain electrodes of the plurality of transistors Tr through through holes provided in the insulating film 35 . In the peripheral area GA, the cathode wiring 60 is provided on the insulating film 35 . The insulating film 42 covers the source electrode 41 s , the drain electrode 41 d , and the cathode wiring 60 . The insulating film 35 is an inorganic insulating film, and the insulating film 42 is an organic insulating film. The source electrode 41s and the drain electrode 41d are formed of a laminated structure of titanium and aluminum, that is, a laminated film of TiAlTi or TiAl. In addition, an organic material such as photosensitive acryl is used for the insulating film 42 .

源極電極41s之一部分形成於與閘極線31a重疊之區域。由介隔絕緣膜35對向之閘極線31a與源極電極41s形成電容Cs1。又,閘極線31a形成於與半導體層25之一部分重疊之區域。電容Cs1亦包含由介隔絕緣膜24對向之半導體層25與閘極線31a形成之電容。A part of the source electrode 41s is formed in a region overlapping with the gate line 31a. A capacitor Cs1 is formed by the gate line 31 a and the source electrode 41 s facing each other through the insulating film 35 . Also, the gate line 31 a is formed in a region partially overlapping with a portion of the semiconductor layer 25 . The capacitor Cs1 also includes a capacitor formed by the opposite semiconductor layer 25 and the gate line 31 a through the insulating film 24 .

顯示裝置1具有源極連接配線43s、汲極連接配線43d、絕緣膜45、對向陽極電極50e、絕緣膜66、連接層50f、無機發光體100、絕緣膜70、平坦化膜80、對向陰極電極90e、平坦化膜92、及蓋部94。源極連接配線43s設置於絕緣膜42上,並經由設置於絕緣膜42之貫通孔連接於源極電極41s。汲極連接配線43d設置於絕緣膜42上,並經由設置於絕緣膜42之貫通孔連接於汲極電極41d。絕緣膜45設置於絕緣膜42上並覆蓋源極連接配線43s與汲極連接配線43d。對向陽極電極50e設置於絕緣膜45上,經由設置於絕緣膜45之貫通孔連接於驅動電晶體DRT之汲極連接配線43d。源極連接配線43s及汲極連接配線43d由例如銦錫氧化物(ITO、Indium Tin Oxide)等透明性導電體形成。The display device 1 includes a source connection wiring 43s, a drain connection wiring 43d, an insulating film 45, an opposite anode electrode 50e, an insulating film 66, a connection layer 50f, an inorganic light-emitting body 100, an insulating film 70, a planarizing film 80, an opposite The cathode electrode 90 e , the planarizing film 92 , and the lid portion 94 . The source connection wiring 43 s is provided on the insulating film 42 , and is connected to the source electrode 41 s through a through hole provided in the insulating film 42 . The drain connection wiring 43 d is provided on the insulating film 42 , and is connected to the drain electrode 41 d through a through hole provided in the insulating film 42 . The insulating film 45 is provided on the insulating film 42 and covers the source connection wiring 43s and the drain connection wiring 43d. The opposing anode electrode 50e is provided on the insulating film 45, and is connected to the drain connection wiring 43d of the driving transistor DRT through a through hole provided in the insulating film 45. The source connection wiring 43s and the drain connection wiring 43d are formed of, for example, a transparent conductor such as indium tin oxide (ITO, Indium Tin Oxide).

絕緣膜66設置於絕緣膜45上,覆蓋對向陽極電極50e。連接層50f設置於絕緣膜66上,經由設置於絕緣膜66之貫通孔連接於對向陽極電極50e。無機發光體100設置於連接層50f之上,對向陽極電極50e經由連接層50f,與無機發光體100之陽極電極112連接。於介隔絕緣膜45對向之對向陽極電極50e與源極連接配線43s之間形成有電容Cs2。The insulating film 66 is provided on the insulating film 45 to cover the opposite anode electrode 50e. The connection layer 50 f is provided on the insulating film 66 , and is connected to the opposite anode electrode 50 e through a through hole provided in the insulating film 66 . The inorganic light-emitting body 100 is disposed on the connection layer 50f, and the opposite anode electrode 50e is connected to the anode electrode 112 of the inorganic light-emitting body 100 through the connection layer 50f. A capacitor Cs2 is formed between the opposing anode electrode 50e and the source connection wiring 43s opposite to each other through the insulating film 45 .

絕緣膜70設置於絕緣膜66上,覆蓋連接層50f、與無機發光體100之陽極電極112之側面。絕緣膜70於與陽極電極112重疊之位置,具有用於安裝無機發光體100之開口。平坦化膜80設置於絕緣膜70上且覆蓋無機發光體100之側面。對向陰極電極90e設置於平坦化膜80上。絕緣膜70係無機絕緣膜,包含例如氮化矽膜(SiN)。平坦化膜80係有機絕緣膜或無機有機混合絕緣膜(於Si-O主鏈,鏈結有例如有機基(甲基或苯基)之材料)。無機發光體100之上表面(陰極電極114)自平坦化膜80露出。對向陰極電極90e連接於無機發光體100之陰極電極114。另,圖4之積層構造為一例。例如,可未設置絕緣膜70。又例如,亦可未設置絕緣膜66及連接層50f,於此情形時,例如對向陽極電極50e與陽極電極112直接連接。The insulating film 70 is disposed on the insulating film 66 and covers the connection layer 50f and the side surface of the anode electrode 112 of the inorganic light-emitting body 100 . The insulating film 70 has an opening for mounting the inorganic light-emitting body 100 at a position overlapping the anode electrode 112 . The planarizing film 80 is disposed on the insulating film 70 and covers the side surface of the inorganic light-emitting body 100 . The opposing cathode electrode 90 e is provided on the planarizing film 80 . The insulating film 70 is an inorganic insulating film, and includes, for example, a silicon nitride film (SiN). The planarizing film 80 is an organic insulating film or an inorganic-organic hybrid insulating film (a material such as an organic group (methyl group or phenyl group) is linked to the Si—O main chain). The upper surface (cathode electrode 114 ) of the inorganic light-emitting body 100 is exposed from the planarizing film 80 . The opposite cathode electrode 90e is connected to the cathode electrode 114 of the inorganic light-emitting body 100 . In addition, the laminated structure of FIG. 4 is an example. For example, the insulating film 70 may not be provided. For another example, the insulating film 66 and the connection layer 50f may not be provided, and in this case, for example, the opposite anode electrode 50e and the anode electrode 112 are directly connected.

對向陰極電極90e經由設置於顯示區域AA外側之接觸孔CH1,與設置於陣列基板2側之陰極配線60連接。具體而言,接觸孔CH1設置於平坦化膜80及絕緣膜42,並於接觸孔CH1之底面設置有陰極配線14。陰極配線60設置於絕緣膜35之上。即,陰極配線60與源極電極41s、汲極電極41d設置於同層,並由相同之材料形成。對向陰極電極90e自顯示區域AA連續設置至周邊區域GA,並於接觸孔CH1之底部與陰極配線60連接。The opposite cathode electrode 90e is connected to the cathode wiring 60 provided on the side of the array substrate 2 through the contact hole CH1 provided on the outer side of the display area AA. Specifically, the contact hole CH1 is provided in the planarizing film 80 and the insulating film 42, and the cathode wiring 14 is provided on the bottom surface of the contact hole CH1. The cathode wiring 60 is provided on the insulating film 35 . That is, the cathode wiring 60 is provided in the same layer as the source electrode 41s and the drain electrode 41d, and is formed of the same material. The opposite cathode electrode 90e is continuously disposed from the display area AA to the peripheral area GA, and is connected to the cathode wiring 60 at the bottom of the contact hole CH1.

平坦化膜92設置於對向陰極電極90e上。平坦化膜92係透光性之絕緣膜,亦可為有機絕緣膜、無機絕緣膜、或無機絕緣膜與有機絕緣膜之積層體等。蓋部94設置於平坦化膜92上。蓋部94係設置於顯示裝置1最上側之蓋。蓋部94係透光性之構件,例如蓋玻璃。但,平坦化膜92及蓋部94並非必要之構成。The planarizing film 92 is provided on the opposite cathode electrode 90e. The planarizing film 92 is a light-transmitting insulating film, and may be an organic insulating film, an inorganic insulating film, a laminate of an inorganic insulating film and an organic insulating film, or the like. The cover portion 94 is provided on the planarizing film 92 . The cover portion 94 is a cover provided on the uppermost side of the display device 1 . The cover portion 94 is a translucent member, such as a cover glass. However, the planarizing film 92 and the lid portion 94 are not necessarily required.

其次,對無機發光體100之構成進行說明。圖5係顯示本實施形態之無機發光體之構成例之剖視圖。如圖5所示,無機發光體100具有無機發光元件102、陽極電極112、及陰極電極114。另,此處,雖區分無機發光元件102、陽極電極112及陰極電極114,但亦可將陽極電極112與陰極電極114包含在內而作為無機發光元件102。Next, the configuration of the inorganic light-emitting body 100 will be described. FIG. 5 is a cross-sectional view showing a configuration example of the inorganic light-emitting body of the present embodiment. As shown in FIG. 5 , the inorganic light-emitting body 100 includes the inorganic light-emitting element 102 , the anode electrode 112 , and the cathode electrode 114 . Here, although the inorganic light emitting element 102 , the anode electrode 112 and the cathode electrode 114 are distinguished, the anode electrode 112 and the cathode electrode 114 may also be included as the inorganic light emitting element 102 .

無機發光元件102係進行發光之發光層。無機發光元件102具有設置於n型被覆層104、p型被覆層106、p型被覆層106與n型被覆層104之間之發光層108。於本實施形態,無機發光元件102朝向上側依序積層p型被覆層106、發光層108、n型被覆層104而構成。作為無機發光元件102,使用氮化鎵(GaN)、磷化鋁銦鎵(AlInGaP)或砷化鋁鎵(AlGaAs)、或磷化砷鎵(GaAsP)等之化合物半導體。進而言之,於本實施形態中,p型被覆層106及n型被覆層104使用氮化鎵(GaN)等。又,作為發光層108,使用氮化銦鎵(InGaN)等。發光層108亦可為積層有InGaN、GaN之多量子井構造(MQW:Multiple Quantum Well)。The inorganic light-emitting element 102 is a light-emitting layer that emits light. The inorganic light-emitting element 102 has an n-type cladding layer 104 , a p-type cladding layer 106 , and a light-emitting layer 108 provided between the p-type cladding layer 106 and the n-type cladding layer 104 . In this embodiment, the inorganic light-emitting element 102 is configured by laminating the p-type cladding layer 106 , the light-emitting layer 108 , and the n-type cladding layer 104 in this order toward the upper side. As the inorganic light-emitting element 102, a compound semiconductor such as gallium nitride (GaN), aluminum indium gallium phosphide (AlInGaP), aluminum gallium arsenide (AlGaAs), or gallium arsenide phosphide (GaAsP) is used. Furthermore, in this embodiment, gallium nitride (GaN) or the like is used for the p-type cladding layer 106 and the n-type cladding layer 104 . In addition, as the light-emitting layer 108, indium gallium nitride (InGaN) or the like is used. The light-emitting layer 108 may also be a multiple quantum well structure (MQW: Multiple Quantum Well) in which InGaN and GaN are stacked.

無機發光體100朝向上側依序積層有陽極電極112、p型被覆層106、發光層108、n型被覆層104、陰極電極114。於無機發光體100之下,設置對向陽極電極50e,於無機發光體100之上,設置對向陰極電極90e。An anode electrode 112 , a p-type cladding layer 106 , a light-emitting layer 108 , an n-type cladding layer 104 , and a cathode electrode 114 are laminated in this order toward the upper side of the inorganic light-emitting body 100 . Below the inorganic light-emitting body 100 , the opposite anode electrode 50 e is disposed, and above the inorganic light-emitting body 100 , the opposite cathode electrode 90 e is disposed.

對向陽極電極50e包含導電性構件,此處為金屬材料。本實施形態中,對向陽極電極50e包含鈦(Ti)與鋁(Al),例如將鈦層與鋁層沿第3方向Dz積層。對向陽極電極50e係於每個無機發光體100(像素49)設置,作為像素電極。The opposite anode electrode 50e includes a conductive member, which is a metal material here. In the present embodiment, the opposing anode electrode 50e contains titanium (Ti) and aluminum (Al), and for example, a titanium layer and an aluminum layer are laminated in the third direction Dz. The opposite anode electrode 50e is provided on each of the inorganic light-emitting bodies 100 (pixels 49) as a pixel electrode.

陽極電極110設置於對向陽極電極50e之上。陽極電極110係具有透光性之導電性構件,例如ITO。陽極電極110電性連接於對向陽極電極50e。於陽極電極110之上,設置有p型被覆層106。陽極電極110與p型被覆層106連接。The anode electrode 110 is provided on the opposite anode electrode 50e. The anode electrode 110 is a light-transmitting conductive member, such as ITO. The anode electrode 110 is electrically connected to the opposite anode electrode 50e. On the anode electrode 110, a p-type cladding layer 106 is provided. The anode electrode 110 is connected to the p-type cladding layer 106 .

陰極電極114設置於n型被覆層104之上。陰極電極114係具有透光性之導電性構件,例如ITO。陰極電極114連接於對向陰極電極90e。The cathode electrode 114 is provided on the n-type cladding layer 104 . The cathode electrode 114 is a light-transmitting conductive member, such as ITO. The cathode electrode 114 is connected to the opposite cathode electrode 90e.

作為對向電極之對向陰極電極90e係具有透光性之導電性構件,例如ITO。對向陰極電極90e係共通設置於複數個(此處為所有)無機發光體100(像素49)之共通電極,且連接於複數個(此處為所有)無機發光體100之陰極電極114。The opposite cathode electrode 90e serving as the opposite electrode is a light-transmitting conductive member, such as ITO. The opposite cathode electrode 90e is provided in common to the common electrodes of the plural (here, all) inorganic light-emitting bodies 100 (pixels 49 ), and is connected to the cathode electrodes 114 of the plural (here, all) inorganic light-emitting bodies 100 .

於本實施形態,顯示裝置1作為無機發光體100(無機發光元件102),具備發出第1顏色之光LR 之第1無機發光體100R(第1無機發光元件102R)、發出第2顏色之光LG 之第2無機發光體100G(第2無機發光元件102G)、及發出第3顏色之光LB 之第3無機發光體100B(第3無機發光元件102B)。第1無機發光體100R、第2無機發光體100G及第3無機發光體100B藉由例如無機發光元件102中之材料之組成比不同,而分別發出第1顏色之光LR 、第2顏色之光LG 、及第3顏色之光LB 之不同顏色之光。第1無機發光體100R發出之第1顏色之光LR 係第1波段之光,第1波段為例如620 nm以上且未達750 nm。另,第1波段之光是指第1波段之波長範圍內之至少1個波長之光,對於其他波段之光亦同樣。第2無機發光體100G發出之第2顏色之光LG 係第2波段之光,第2波段為例如495 nm以上且未達570 nm。第3無機發光體100B發出之第3顏色之光LB 係第3波段之光,第3波段為例如450 nm以上且未達495 nm。In this embodiment, the display device 1 includes, as the inorganic light-emitting body 100 (inorganic light-emitting element 102 ), a first inorganic light-emitting body 100R (first inorganic light-emitting element 102R) that emits light LR of a first color, and a first inorganic light-emitting body 100R (first inorganic light-emitting element 102R) that emits light of a second color. The second inorganic light-emitting body 100G (second inorganic light-emitting element 102G) that emits light LG , and the third inorganic light - emitting body 100B (third inorganic light-emitting element 102B) that emits light LB of the third color. The first inorganic light-emitting body 100R, the second inorganic light-emitting body 100G, and the third inorganic light-emitting body 100B respectively emit light of the first color LR and light of the second color due to the difference in the composition ratio of materials in the inorganic light-emitting element 102 , respectively. Light LG and light of different colors of light LB of the third color. The light L R of the first color emitted by the first inorganic light-emitting body 100R is light in the first wavelength band, and the first wavelength band is, for example, 620 nm or more and less than 750 nm. In addition, the light of the first wavelength band refers to the light of at least one wavelength within the wavelength range of the first wavelength band, and the same applies to the light of other wavelength bands. The light LG of the second color emitted by the second inorganic light-emitting body 100G is light in the second wavelength band, and the second wavelength band is, for example, 495 nm or more and less than 570 nm. The light L B of the third color emitted by the third inorganic light-emitting body 100B is light in the third wavelength band, and the third wavelength band is, for example, 450 nm or more and less than 495 nm.

此處,無機發光元件102形成於與陣列基板2不同之基板即形成基板上,且自形成基板遷移至陣列基板2上。於形成基板上形成無機發光元件102時,例如因製造不良等原因,有成為不良之情形。此處之不良是指無機發光元件102未適當發光之情形、或即使於適當發光之情形亦形成缺陷等而於短期間內成為發光不良之情形等。以下,將不良之無機發光元件102(無機發光體100)記載為不良無機發光元件102a(不良無機發光體100a)。若將不良無機發光元件102a遷移至陣列基板2上,則可能因不良無機發光元件102a之發光不良導致顯示裝置1無法適當顯示圖像等品質上問題。因此,於本實施形態,不使不良無機發光元件102a搭載於陣列基板2,而作為取代之無機發光元件102,將替代無機發光元件102W搭載於陣列基板2上,形成取代之無機發光體100即替代無機發光體100W。Here, the inorganic light emitting element 102 is formed on a substrate different from the array substrate 2 , that is, on the formation substrate, and migrates from the formation substrate to the array substrate 2 . When the inorganic light-emitting element 102 is formed on the formation substrate, it may become defective due to, for example, manufacturing defects. The defect here refers to a case where the inorganic light emitting element 102 does not emit light properly, or a case where a defect or the like is formed even in a case where the inorganic light emitting element 102 emits light properly, and the light emission becomes defective in a short period of time. Hereinafter, the defective inorganic light-emitting element 102 (inorganic light-emitting body 100 ) is described as the defective inorganic light-emitting element 102 a (defective inorganic light-emitting body 100 a ). If the defective inorganic light emitting element 102a is migrated to the array substrate 2, the display device 1 may not be able to properly display images and other quality problems due to poor light emission of the defective inorganic light emitting element 102a. Therefore, in this embodiment, instead of mounting the defective inorganic light-emitting element 102a on the array substrate 2, as a substitute inorganic light-emitting element 102, the substitute inorganic light-emitting element 102W is mounted on the array substrate 2 to form a substitute inorganic light-emitting body 100. Replacing the inorganic luminophore 100W.

替代無機發光體100W(替代無機發光元件102W)係發出替代顏色之光LW 之無機發光體100(無機發光元件102)。替代顏色係與第1顏色、第2顏色、及第3顏色不同顏色之光,於本實施形態,亦稱為由第1顏色之光、第2顏色之光、及第3顏色之光合成之光。替代顏色於本實施形態為白色之光。替代無機發光體100W發出之替代顏色之光LB 包含第1波段、第2波段、及第3波段之波長範圍之光。替代無機發光體100W並非包含複數個無機發光體者,而係以1個無機發光體發出替代顏色(此處為白色)之光。替代無機發光體100W具有由多量子井構造(MQW)構成之發光層作為發光層108。替代無機發光體100W之發光層108係例如積層複數層障壁層與井層而構成。井層可由例如包含鎵之III族氮化物半導體材料構成,由氮化鎵或氮化鎵與氮化銦之混晶等構成即可。障壁層亦可由例如禁帶能量大於井層之材料構成,由例如氮化鎵等III族氮化物半導體材料構成即可。但,替代無機發光體100W係只要可發出替代顏色,則材料及構成不限定於此。The substitute inorganic light-emitting body 100W (the substitute inorganic light-emitting element 102W) is the inorganic light-emitting body 100 (the inorganic light-emitting element 102 ) that emits light L W of a substitute color. The substitute color is light of a different color from the first color, the second color, and the third color, and in this embodiment, it is also referred to as the light synthesized by the light of the first color, the light of the second color, and the light of the third color . The alternative color is white light in this embodiment. The alternative color light LB emitted by the alternative inorganic light - emitting body 100W includes light in the wavelength range of the first wavelength band, the second wavelength band, and the third wavelength band. The substitute inorganic light-emitting body 100W does not include a plurality of inorganic light-emitting bodies, but uses one inorganic light-emitting body to emit light of a substitute color (here, white). The alternative inorganic light-emitting body 100W has, as the light-emitting layer 108, a light-emitting layer composed of a multi-quantum well structure (MQW). The light-emitting layer 108 that replaces the inorganic light-emitting body 100W is formed by, for example, laminating a plurality of barrier layers and well layers. The well layer may be formed of, for example, a group III nitride semiconductor material containing gallium, and may be formed of gallium nitride or a mixed crystal of gallium nitride and indium nitride. The barrier layer may also be formed of, for example, a material with a band gap energy greater than that of the well layer, and may be formed of a group III nitride semiconductor material such as gallium nitride. However, the material and configuration of the alternative inorganic light-emitting body 100W are not limited to this as long as the alternative color can be emitted.

又,顯示裝置1於替代無機發光體100W之上,設置有彩色濾光器即濾光器部96。濾光器部96透過來自替代無機發光體100W之替代顏色之光LW 中之與不良無機發光元件102a正常時所發出之光之顏色相同顏色的光,換言之,與搭載於顯示裝置1之正常之無機發光元件102之一相同顏色之光。此處相同顏色之光係指相同波段之範圍內之光,可以說濾光器部96透過與不良無機發光元件102a正常所發出之光相同之波段之範圍內之光,換言之,與搭載於顯示裝置1之其他無機發光元件102之一相同波段之光。以下,進行具體說明。In addition, the display device 1 is provided with a filter portion 96 that is a color filter on the inorganic light-emitting body 100W in place of it. The filter portion 96 transmits the light of the same color as the light emitted by the defective inorganic light emitting element 102 a when the light of the substitute color L W from the substitute inorganic light emitting body 100 W is normal, in other words, the light of the same color as the normal light mounted on the display device 1 . light of the same color as one of the inorganic light-emitting elements 102 . Here, the light of the same color refers to the light within the same wavelength range. It can be said that the filter portion 96 transmits the light within the same wavelength range as the light normally emitted by the defective inorganic light-emitting element 102a. Light of the same wavelength band as one of the other inorganic light-emitting elements 102 of the device 1 . Hereinafter, it demonstrates concretely.

圖6及圖7係顯示搭載有替代無機發光體之情形之例之模式圖。圖6係俯視顯示裝置1之替代無機發光體100W之情形之模式圖,圖7係顯示裝置1之替代無機發光體100W之附近之模式性剖視圖。如圖6所示,替代無機發光體100W與不良無機發光體100a以外之無機發光體100一起矩陣狀排列設置,如圖7所示,與不良無機發光體100a以外之無機發光體100設置於相同之層。替代無機發光體100W搭載於預定搭載不良無機發光體100a之位置。另,圖7顯示檢測出1個第1無機發光體100R作為不良無機發光體100a之情形之例。因此,於圖7之例中,於預定搭載作為不良無機發光體100a檢測出之第1無機發光體100R之位置,搭載替代無機發光體100W。FIG. 6 and FIG. 7 are schematic diagrams showing an example of a case where a substitute inorganic light-emitting body is mounted. FIG. 6 is a schematic view showing the state of the replacement inorganic light-emitting body 100W of the display device 1 from above, and FIG. 7 is a schematic cross-sectional view of the vicinity of the replacement inorganic light-emitting body 100W of the display device 1 . As shown in FIG. 6 , the replacement inorganic light-emitting body 100W is arranged in a matrix with the inorganic light-emitting body 100 other than the defective inorganic light-emitting body 100a, and as shown in FIG. 7, the inorganic light-emitting body 100 other than the defective inorganic light-emitting body 100a is arranged in the same place layer. The replacement inorganic light-emitting body 100W is mounted on the position where the defective inorganic light-emitting body 100a is intended to be mounted. 7 shows an example of a case where one first inorganic light-emitting body 100R is detected as a defective inorganic light-emitting body 100a. Therefore, in the example of FIG. 7 , the substitute inorganic light-emitting body 100W is mounted at the position where the first inorganic light-emitting body 100R detected as the defective inorganic light-emitting body 100a is to be mounted.

如圖7所示,於替代無機發光體100W之上,設置有濾光器部96。濾光器部96於俯視下,以與替代無機發光體100W重疊之方式設置,且不與替代無機發光體100W以外之無機發光體100重疊。濾光器部96吸收來自替代無機發光體100W之替代顏色之光LW 中之與來自置換為替代無機發光體100W之不良無機發光體100a之光不同的波段(顏色)之光,透過與來自置換為替代無機發光體100W之不良無機發光元件102a之光相同之波段(顏色)之光。如圖7所示,於不良無機發光元件102a為第1無機發光元件102R之情形時,作為與該不良無機發光元件102a之替代無機發光體100W重疊之濾光器部96,設置有濾光器部96R。濾光器部96R阻擋來自替代無機發光體100W之替代顏色之光LW 中之第1顏色以外之顏色(第1波段之範圍外)之光,透過第1顏色(第1波段之範圍內)之光。又,於不良無機發光元件102a為第2無機發光元件102G之情形時,作為與該不良無機發光元件102a之替代無機發光體100W重疊之濾光器部96,設置有濾光器部96G。濾光器部96G阻斷來自替代無機發光體100W之替代顏色之光LW 中之第2顏色以外之顏色(第2波段之範圍外)之光,透過第2顏色(第2波段之範圍內)之光。又,於不良無機發光元件102a為第3無機發光元件102B之情形時,作為與該不良無機發光元件102a之替代無機發光體100W重疊之濾光器部96,設置有濾光器部96B。濾光器部96B遮擋來自替代無機發光體100W之替代顏色之光LW 中之第3顏色以外之顏色(第3波段之範圍外)之光,透過第3顏色(第3波段之範圍內)之光。另,作為濾光器部96之材料,列舉例如相當於紅色、綠色、及藍色之彩色濾光器。As shown in FIG. 7 , a filter portion 96 is provided on the substitute inorganic light-emitting body 100W. The filter portion 96 is disposed so as to overlap with the alternative inorganic light-emitting body 100W in plan view, and does not overlap with the inorganic light-emitting body 100 other than the alternative inorganic light-emitting body 100W. The filter portion 96 absorbs the light of the wavelength band (color) different from the light from the defective inorganic light-emitting body 100a replaced by the replacement inorganic light-emitting body 100W among the light LW of the replacement color from the replacement inorganic light-emitting body 100W, and transmits the light of the wavelength (color) different from the light from the defective inorganic light-emitting body 100a replaced by the replacement inorganic light-emitting body 100W. The light of the same wavelength band (color) as the light of the defective inorganic light-emitting element 102a in place of the inorganic light-emitting body 100W is replaced. As shown in FIG. 7 , when the defective inorganic light-emitting element 102a is the first inorganic light-emitting element 102R, a filter is provided as the filter portion 96 overlapping the replacement inorganic light-emitting body 100W of the defective inorganic light-emitting element 102a Section 96R. The filter portion 96R blocks the light of colors other than the first color (outside the first wavelength range) from the light LW of the replacement color of the replacement inorganic light-emitting body 100W, and transmits the first color (within the first wavelength range) Light. When the defective inorganic light emitting element 102a is the second inorganic light emitting element 102G, a filter portion 96G is provided as the filter portion 96 overlapping the replacement inorganic light emitting body 100W of the defective inorganic light emitting element 102a. The filter portion 96G blocks light of colors other than the second color (outside the range of the second wavelength band) in the light LW of the substitute color from the substitute inorganic light-emitting body 100W, and transmits the light of the second color (in the range of the second wavelength band) )Light. When the defective inorganic light emitting element 102a is the third inorganic light emitting element 102B, a filter portion 96B is provided as the filter portion 96 overlapping the replacement inorganic light emitting body 100W of the defective inorganic light emitting element 102a. The filter portion 96B blocks light of colors other than the third color (outside the range of the third wavelength band) from the light LW of the substitute color of the substitute inorganic light-emitting body 100W, and transmits the light of the third color (within the range of the third wavelength band) Light. In addition, as a material of the filter part 96, the color filter corresponding to red, green, and blue is mentioned, for example.

如圖7所示,替代無機發光體100W發出之光LW 入射至替代無機發光體100W上側之濾光器部96(於圖7之例為濾光器部96R),於濾光器部96中,透過與不良無機發光元件102a相同顏色之光,換言之,與搭載於顯示裝置1之其他1個無機發光元件102相同顏色之光(於圖7之例為與第1無機發光元件102R相同之第1顏色之光LR ),並出射至顯示裝置1之外部。如此,本實施形態之顯示裝置1於不搭載不良無機發光元件102a之情形時,亦可藉由替代無機發光體100W及彩色濾光器部96,照射與不良無機發光元件102a正常搭載時所發出之顏色相同顏色之光。換言之,顯示裝置1可藉由替代無機發光體100W及濾光器部96,而以代理品構成預定由不良無機發光元件102a構成之像素49(於圖7之例為第1像素49R)。如此,根據本實施形態,因不搭載不良無機發光元件102a,抑制顯示裝置1之圖像顯示變得不適當,且可以替代無機發光體100W及濾光器部96代用應由不良無機發光元件102a負責之像素49之功能,故於不搭載不良無機發光元件102a之情形時,亦可適當顯示圖像。As shown in FIG. 7 , the light L W emitted by the substitute inorganic light-emitting body 100W is incident on the filter part 96 on the upper side of the substitute inorganic light-emitting body 100W (the filter part 96R in the example of FIG. 7 ), and the filter part 96 Among them, light of the same color as the defective inorganic light emitting element 102a is transmitted, in other words, light of the same color as that of the other inorganic light emitting element 102 mounted on the display device 1 (in the example of FIG. 7 , the same color as the first inorganic light emitting element 102R is transmitted). The first color light L R ) is emitted to the outside of the display device 1 . In this way, when the display device 1 of the present embodiment does not mount the defective inorganic light-emitting element 102a, the light emitted when the defective inorganic light-emitting element 102a is normally mounted can be irradiated by replacing the inorganic light-emitting body 100W and the color filter portion 96 . of the same color as the light of the same color. In other words, the display device 1 can replace the inorganic light-emitting body 100W and the filter portion 96 with a proxy to form the pixel 49 (the first pixel 49R in the example of FIG. 7 ) that is intended to be composed of the defective inorganic light-emitting element 102a. In this way, according to the present embodiment, since the defective inorganic light emitting element 102a is not mounted, the image display of the display device 1 is suppressed from becoming inappropriate, and the defective inorganic light emitting element 102a can be used instead of the inorganic light emitting body 100W and the filter portion 96 Due to the function of the responsible pixel 49, the image can be properly displayed even when the defective inorganic light-emitting element 102a is not mounted.

可以說本實施形態之顯示裝置1具備發出特定顏色之光之無機發光體100、發出與特定顏色不同之替代顏色之光LW 之替代無機發光體100W、及濾光器部96。濾光器部96設置於俯視下與替代無機發光體100W重疊之位置,並透過來自替代無機發光體100W之光LW 中之特定顏色之光。即,本實施形態之顯示裝置1使自替代無機發光元件102W發出並透過濾光器部96之光之顏色與自其他1個無機發光元件102發出之光之顏色相同。進而言之,於未設置替代無機發光體100W及濾光器部96之1個像素Pix中,設置有第1無機發光體100R、第2無機發光體100G及第3無機發光體100B。另一方面,於設置有替代無機發光體100W及濾光器部96之1個像素Pix中,未設置發出與濾光器部96透過之光之顏色相同顏色之光之無機發光體100。例如於設置有濾光器部96R之像素Pix,不設置第1無機發光體100R,而設置有替代無機發光體100W及濾光器部96R、第2無機發光體100G、及第3無機發光體100B。又,若著眼於顯示裝置1全體,則作為顯示特定顏色(例如第1顏色)之像素49(例如第1像素49R),包含有:包含發出該特定顏色之光之無機發光體100(例如第1無機發光體100R)之像素49、包含發出替代顏色之光LW 之替代無機發光體100W、及透過該特定顏色之光之濾光器部96(例如濾光器部96R)之像素49。It can be said that the display device 1 of this embodiment includes an inorganic light-emitting body 100 that emits light of a specific color, a substitute inorganic light-emitting body 100W that emits light LW of an alternate color different from the specific color, and a filter portion 96 . The filter portion 96 is disposed at a position overlapping the substitute inorganic light-emitting body 100W in plan view, and transmits light of a specific color in the light L W from the substitute inorganic light-emitting body 100W. That is, in the display device 1 of the present embodiment, the color of the light emitted from the substitute inorganic light emitting element 102W and transmitted through the filter portion 96 is the same as the color of the light emitted from the other inorganic light emitting element 102 . More specifically, in one pixel Pix in which the replacement inorganic light emitting body 100W and the filter portion 96 are not provided, the first inorganic light emitting body 100R, the second inorganic light emitting body 100G, and the third inorganic light emitting body 100B are provided. On the other hand, in one pixel Pix provided with the replacement inorganic light-emitting body 100W and the filter portion 96, the inorganic light-emitting body 100 that emits light of the same color as the light transmitted through the filter portion 96 is not provided. For example, in the pixel Pix provided with the filter portion 96R, instead of the first inorganic light-emitting body 100R, the substitute inorganic light-emitting body 100W and the filter portion 96R, the second inorganic light-emitting body 100G, and the third inorganic light-emitting body are provided 100B. In addition, if looking at the entire display device 1, the pixel 49 (for example, the first pixel 49R) that displays a specific color (for example, the first color) includes an inorganic light-emitting body 100 (for example, the first pixel 49R) that emits light of the specific color. 1 The pixel 49 of the inorganic light emitting body 100R), the pixel 49 of the light filter portion 96 (eg, the filter portion 96R ) that transmits the light of the alternate color 100W including the alternate phosphor 100W and the light of the specific color.

另,於本實施形態,來自替代無機發光體100W之替代顏色之光LW 包含與不良無機發光元件102a之光相同波段之光,濾光器部96透過來自替代無機發光體100W之替代顏色之光LW 中之與來自不良無機發光元件102a之光之波段(顏色)相同之波段(顏色)之光。但,替代顏色之光LW 亦可不包含與不良無機發光元件102a之光相同波段之光。於此情形時,濾光器部96亦可為例如將來自替代無機發光體100W之替代顏色之光LW 之波長(顏色)轉換為與來自不良無機發光元件102a之光相同波段(顏色)的波長轉換濾光器。即,濾光器部96只要為將來自替代無機發光體100W之光LW 設為與來自不良無機發光元件102a之光相同顏色之光而出射者即可。In addition, in this embodiment, the light L W of the substitute color from the substitute inorganic light-emitting body 100W includes light of the same wavelength band as the light of the defective inorganic light-emitting element 102a, and the filter portion 96 transmits the light of the substitute color from the substitute inorganic light-emitting body 100W. The light in the wavelength band (color) of the light L W is the same wavelength band (color) as the wavelength band (color) of the light from the defective inorganic light-emitting element 102a. However, the light L W of the alternative color may not include light of the same wavelength band as the light of the defective inorganic light-emitting element 102a. In this case, the filter portion 96 may also convert, for example, the wavelength (color) of the light L W of the substitute color from the substitute inorganic light-emitting body 100W into a wavelength (color) of the same wavelength band (color) as the light from the defective inorganic light-emitting element 102a. wavelength conversion filter. That is, the filter portion 96 only needs to emit light L W from the replacement inorganic light emitting body 100W as light of the same color as the light from the defective inorganic light emitting element 102a.

(顯示裝置之製造方法) 其次,對顯示裝置1之製造方法、更具體而言係替代無機發光體100W及濾光器部96之搭載方法進行說明。圖8係說明本實施形態之顯示裝置之製造方法之圖。如圖8之步驟S10所示,於本實施形態之顯示裝置1之製造方法中,形成顯示裝置1之陣列基板2。即,形成顯示裝置1中之較陽極電極112更下側之各部、與陽極電極112。又,於本製造方法中,於與陣列基板2不同之形成基板200上,形成無機發光元件102。於本實施形態中,對每種無機發光元件102,使用不同之形成基板200形成。即,於1個形成基板200上形成發出相同顏色之光之無機發光元件102,於圖8之例,於形成基板200R上形成複數個第1無機發光元件102R,於形成基板200G上形成複數個第2無機發光元件102G,於形成基板200B上形成複數個第3無機發光元件102B。(Manufacturing method of display device) Next, a method of manufacturing the display device 1 , and more specifically, a method of replacing the inorganic light-emitting body 100W and the mounting method of the filter portion 96 will be described. FIG. 8 is a diagram illustrating a method of manufacturing the display device of the present embodiment. As shown in step S10 of FIG. 8 , in the manufacturing method of the display device 1 of the present embodiment, the array substrate 2 of the display device 1 is formed. That is, each portion of the display device 1 on the lower side than the anode electrode 112 and the anode electrode 112 are formed. Moreover, in this manufacturing method, the inorganic light-emitting element 102 is formed on the formation substrate 200 different from the array substrate 2 . In this embodiment, the inorganic light-emitting element 102 is formed using a different formation substrate 200 for each type of inorganic light-emitting element 102 . That is, the inorganic light emitting elements 102 emitting light of the same color are formed on one forming substrate 200 , in the example of FIG. 8 , a plurality of first inorganic light emitting elements 102R are formed on the forming substrate 200R, and a plurality of first inorganic light emitting elements 102R are formed on the forming substrate 200G The second inorganic light emitting element 102G is formed by forming a plurality of third inorganic light emitting elements 102B on the formation substrate 200B.

於本實施形態中,對形成於形成基板200上之無機發光元件102執行檢測步驟,自形成於形成基板200上之無機發光元件102中檢測不良無機發光元件102a。作為不良無機發光元件102a之檢測方法,使用例如光致發光法。於光致發光法中,對無機發光元件102照射光,檢測被激發之無機發光元件102之電子復原為基態時發出之光,基於該光,檢測缺陷等無機發光元件102之狀態。接著,基於由例如光致發光法檢測出之無機發光元件102之狀態,判斷是否為不良無機發光元件102a。例如可將由光致發光法檢測出缺陷之無機發光元件102判斷為不良無機發光元件102a。但,不良無機發光元件102a之檢測方法不限定於此,而為任意。In this embodiment, the detection step is performed on the inorganic light emitting elements 102 formed on the formation substrate 200 , and the defective inorganic light emitting element 102 a is detected from the inorganic light emitting elements 102 formed on the formation substrate 200 . As a detection method of the defective inorganic light-emitting element 102a, for example, a photoluminescence method is used. In the photoluminescence method, the inorganic light emitting element 102 is irradiated with light, the light emitted when the excited electrons of the inorganic light emitting element 102 return to the ground state is detected, and the state of the inorganic light emitting element 102 such as defects is detected based on the light. Next, based on the state of the inorganic light emitting element 102 detected by, for example, a photoluminescence method, it is determined whether or not the inorganic light emitting element 102 a is defective. For example, the inorganic light emitting element 102 whose defects are detected by the photoluminescence method can be determined as the defective inorganic light emitting element 102a. However, the detection method of the defective inorganic light emitting element 102a is not limited to this, but is arbitrary.

於本製造方法中,將形成於形成基板200上之無機發光元件102中之不良無機發光元件102a以外之無機發光元件102搭載於陣列基板2上。於圖8,以自形成基板200R上之複數個第1無機發光元件102R檢測出不良無機發光元件102a為例進行說明。於步驟S10中,將形成基板200R上之複數個第1無機發光元件102R中之不良無機發光元件102a以外之第1無機發光元件102R搭載於陣列基板2之陽極電極112上。於預定搭載不良無機發光元件102a之陣列基板2之陽極電極112上,不搭載第1無機發光元件102R,而保留可搭載無機發光元件102之空間。於本實施形態,藉由雷射剝離將無機發光元件102搭載於陣列基板2上。具體而言,使形成基板200R之形成有第1無機發光元件102R之面與陣列基板2之形成有陽極電極112之面對向。且,自形成基板200R之與形成有第1無機發光元件102R之面為相反側之面,對形成基板200R上之不良無機發光元件102a以外之第1無機發光元件102R照射雷射光LI。藉此,不良無機發光元件102a以外之第1無機發光元件102R自形成基板200R上剝離,而被轉印至陣列基板2之陽極電極112上。於本製造方法中,可對形成基板200R之整面照射雷射光LI,且於不良無機發光元件102a進行遮蔽等以不被雷射光LI照射,藉此僅對不良無機發光元件102a以外之第1無機發光元件102R照射雷射光LI。藉此,例如可以1次雷射光LI之照射,選擇性剝離不良無機發光元件102a以外之複數個第1無機發光元件102R。但,亦可對不良無機發光元件102a以外之第1無機發光元件102R之各者,個別地照射雷射光LI。又,將無機發光元件102搭載於陣列基板2之方法不限定於雷射剝離,亦可為任意。In the present manufacturing method, the inorganic light emitting elements 102 other than the defective inorganic light emitting elements 102 a among the inorganic light emitting elements 102 formed on the formation substrate 200 are mounted on the array substrate 2 . In FIG. 8 , description will be given by taking as an example that the defective inorganic light emitting elements 102 a are detected from the plurality of first inorganic light emitting elements 102R formed on the substrate 200R. In step S10 , the first inorganic light emitting elements 102R other than the defective inorganic light emitting element 102a among the plurality of first inorganic light emitting elements 102R formed on the substrate 200R are mounted on the anode electrode 112 of the array substrate 2 . On the anode electrode 112 of the array substrate 2 on which the defective inorganic light emitting element 102a is to be mounted, the first inorganic light emitting element 102R is not mounted, and a space for mounting the inorganic light emitting element 102 is reserved. In this embodiment, the inorganic light-emitting element 102 is mounted on the array substrate 2 by laser lift-off. Specifically, the surface of the formation substrate 200R on which the first inorganic light emitting element 102R is formed and the surface of the array substrate 2 on which the anode electrode 112 is formed are made to face each other. Then, the laser light LI is irradiated to the first inorganic light emitting element 102R other than the defective inorganic light emitting element 102a on the formation substrate 200R from the surface on the opposite side of the formation substrate 200R and the surface on which the first inorganic light emitting element 102R is formed. Thereby, the first inorganic light emitting elements 102R other than the defective inorganic light emitting elements 102a are peeled off from the formation substrate 200R, and are transferred onto the anode electrode 112 of the array substrate 2 . In the present manufacturing method, the entire surface of the substrate 200R can be irradiated with the laser light LI, and the defective inorganic light-emitting element 102a can be shielded from the laser light LI by shielding or the like, so that only the first non-defective inorganic light-emitting element 102a can be irradiated with the laser light LI. The inorganic light-emitting element 102R irradiates the laser light LI. Thereby, for example, a plurality of first inorganic light emitting elements 102R other than the defective inorganic light emitting element 102a can be selectively peeled off by one irradiation of the laser light LI. However, each of the first inorganic light emitting elements 102R other than the defective inorganic light emitting element 102a may be individually irradiated with the laser light LI. In addition, the method of mounting the inorganic light-emitting element 102 on the array substrate 2 is not limited to laser lift-off, and may be arbitrary.

另,於圖8之例,形成於形成基板200上之無機發光元件102之位置、與形成於陣列基板2上之陽極電極112之位置對應,換言之,形成於形成基板200上之無機發光元件102之數量及間距(相鄰之無機發光元件102之中心間距離)與形成於陣列基板2上之陽極電極112之數量及間距(相鄰之無機發光元件102之中心間距離)相同。換言之,亦可稱為形成基板200上之無機發光元件102之座標、與陣列基板2上之陽極電極112之座標對應。於圖8之例,形成基板200R上之第1無機發光元件102R之數量及間距對應於陣列基板2上之預定搭載無機發光元件102(第1無機發光元件102R、第2無機發光元件102G、第3無機發光元件102B)之陽極電極112之數量及間距。但,形成於形成基板200上之第1無機發光元件102R之數量及間距不限定於此,亦可為任意。例如,形成基板200R上之第1無機發光元件102R之數量及間距亦可對應於陣列基板2上之預定搭載第1無機發光元件102R之陽極電極112之數量及間距。又例如,亦可使形成於形成基板200R上之第1無機發光元件102R之數量為陣列基板2上之預定搭載無機發光元件102之陽極電極112之數量之任意之整數n倍,使形成於形成基板200R上之第1無機發光元件102R之間距相對於陣列基板2上之預定搭載第1無機發光元件102R之陽極電極112之間距為整數n之1倍。於此情形時,僅對轉印於陣列基板2之形成基板200上之無機發光元件102,照射雷射光LI。形成基板200G、200B上之第2無機發光元件102G、第3無機發光元件102B之數量及間距、或稍後敘述之形成基板202上之替代無機發光元件102W之數量及間距,皆可與形成基板200R上之第1無機發光元件102R之數量及間距同樣地設定。8, the position of the inorganic light emitting element 102 formed on the formation substrate 200 corresponds to the position of the anode electrode 112 formed on the array substrate 2, in other words, the inorganic light emitting element 102 formed on the formation substrate 200. The number and spacing (distance between centers of adjacent inorganic light-emitting elements 102 ) are the same as the number and spacing (distance between centers of adjacent inorganic light-emitting elements 102 ) of the anode electrodes 112 formed on the array substrate 2 . In other words, the coordinates of the inorganic light-emitting elements 102 on the formation substrate 200 can also be referred to as corresponding to the coordinates of the anode electrodes 112 on the array substrate 2 . In the example of FIG. 8 , the number and spacing of the first inorganic light emitting elements 102R formed on the substrate 200R correspond to the inorganic light emitting elements 102 to be mounted on the array substrate 2 (the first inorganic light emitting element 102R, the second inorganic light emitting element 102G, the 3. The number and spacing of the anode electrodes 112 of the inorganic light-emitting element 102B). However, the number and pitch of the first inorganic light-emitting elements 102R formed on the formation substrate 200 are not limited to this, and may be arbitrary. For example, the number and spacing of the first inorganic light emitting elements 102R formed on the substrate 200R may also correspond to the number and spacing of the anode electrodes 112 on the array substrate 2 intended to mount the first inorganic light emitting element 102R. For another example, the number of the first inorganic light-emitting elements 102R formed on the formation substrate 200R may be an arbitrary integer n times the number of the anode electrodes 112 on the array substrate 2 to be mounted with the inorganic light-emitting elements 102, so that the number of the first inorganic light-emitting elements 102R formed on the formation substrate 200 The distance between the first inorganic light emitting elements 102R on the substrate 200R is 1 times the integer n relative to the distance between the anode electrodes 112 on the array substrate 2 on which the first inorganic light emitting elements 102R are to be mounted. In this case, the laser light LI is irradiated only to the inorganic light emitting element 102 transferred on the formation substrate 200 of the array substrate 2 . The number and spacing of the second inorganic light emitting elements 102G and the third inorganic light emitting elements 102B on the formation substrates 200G and 200B, or the number and spacing of the alternative inorganic light emitting elements 102W on the formation substrate 202 described later, can all be the same as the formation substrates. The number and pitch of the first inorganic light-emitting elements 102R on the 200R are set in the same manner.

其次,如步驟S12所示,將形成基板200G上之複數個第2無機發光元件102G搭載於陣列基板2之陽極電極112上。具體而言,使形成基板200G之形成有第2無機發光元件102G之面與陣列基板2之形成有陽極電極112之面對向,自形成基板200G之與形成有第2無機發光元件102G之面為相反側之面,對形成基板200G上之第2無機發光元件102G照射雷射光LI。藉此,使第2無機發光元件102G自形成基板200G上剝離,並將第2無機發光元件102G轉印於陣列基板2之陽極電極112上。另,於本實施形態,對於形成基板200G上之複數個第2無機發光元件102G亦進行不良無機發光元件102a之檢測,於有不良無機發光元件102a之情形時,將不良無機發光元件102a以外之第2無機發光元件102G搭載於陣列基板2之陽極電極112上。Next, as shown in step S12 , the plurality of second inorganic light-emitting elements 102G formed on the substrate 200G are mounted on the anode electrode 112 of the array substrate 2 . Specifically, the surface of the formation substrate 200G on which the second inorganic light emitting element 102G is formed and the surface of the array substrate 2 on which the anode electrode 112 is formed are made to face, from the surface of the formation substrate 200G and the surface of the formation of the second inorganic light emitting element 102G. The surface on the opposite side is irradiated with laser light LI to the second inorganic light emitting element 102G on the formation substrate 200G. Thereby, the second inorganic light emitting element 102G is peeled off from the formation substrate 200G, and the second inorganic light emitting element 102G is transferred onto the anode electrode 112 of the array substrate 2 . In addition, in this embodiment, the detection of defective inorganic light emitting elements 102a is also performed for the plurality of second inorganic light emitting elements 102G formed on the substrate 200G. The second inorganic light-emitting element 102G is mounted on the anode electrode 112 of the array substrate 2 .

其次,如步驟S14所示,將形成基板200B上之複數個第3無機發光元件102B搭載於陣列基板2之陽極電極112上。具體而言,使形成基板200B之形成有第3無機發光元件102B之面與陣列基板2之形成有陽極電極112之面對向,自形成基板200B之與形成有第3無機發光元件102B之面為相反側之面,對形成基板200B上之第3無機發光元件102B照射雷射光LI。藉此,使第3無機發光元件102B自形成基板200B上剝離,而將第3無機發光元件102B轉印於陣列基板2之陽極電極112上。另,於本實施形態,對於形成基板200B上之複數個第3無機發光元件102B亦進行不良無機發光元件102a之檢測,於有不良無機發光元件102a之情形時,將不良無機發光元件102a以外之第3無機發光元件102B搭載於陣列基板2之陽極電極112上。Next, as shown in step S14 , the plurality of third inorganic light-emitting elements 102B formed on the substrate 200B are mounted on the anode electrode 112 of the array substrate 2 . Specifically, the surface on which the third inorganic light emitting element 102B is formed of the substrate 200B is made to face the surface on which the anode electrode 112 is formed on the array substrate 2, and the surface on which the third inorganic light emitting element 102B is formed is formed from the surface of the substrate 200B. The surface on the opposite side is irradiated with laser light LI to the third inorganic light emitting element 102B formed on the substrate 200B. Thereby, the third inorganic light emitting element 102B is peeled off from the formation substrate 200B, and the third inorganic light emitting element 102B is transferred onto the anode electrode 112 of the array substrate 2 . In addition, in this embodiment, the detection of defective inorganic light-emitting elements 102a is also performed for the plurality of third inorganic light-emitting elements 102B formed on the substrate 200B. The third inorganic light-emitting element 102B is mounted on the anode electrode 112 of the array substrate 2 .

如此,於圖8之例,以第1無機發光元件102R、第2無機發光元件102G、第3無機發光元件102B之順序,進行向陣列基板2之陽極電極112上之搭載,但搭載之順序為任意。又,於本實施形態,將第1無機發光元件102R、第2無機發光元件102G、第3無機發光元件102B分別形成於不同之形成基板200,並分別於不同之時序將第1無機發光元件102R、第2無機發光元件102G、第3無機發光元件102B遷移至陣列基板2。但,例如亦可於1個形成基板200形成第1無機發光元件102R、第2無機發光元件102G、及第3無機發光元件102B,並將該等一次性遷移至陣列基板2。In this way, in the example of FIG. 8 , the first inorganic light emitting element 102R, the second inorganic light emitting element 102G, and the third inorganic light emitting element 102B are mounted on the anode electrode 112 of the array substrate 2 in this order, but the mounting order is as follows: any. In addition, in this embodiment, the first inorganic light emitting element 102R, the second inorganic light emitting element 102G, and the third inorganic light emitting element 102B are formed on different forming substrates 200, respectively, and the first inorganic light emitting element 102R is formed at different timings, respectively. , the second inorganic light emitting element 102G, and the third inorganic light emitting element 102B migrate to the array substrate 2 . However, for example, the first inorganic light emitting element 102R, the second inorganic light emitting element 102G, and the third inorganic light emitting element 102B may be formed on one forming substrate 200 and transferred to the array substrate 2 at one time.

若第1無機發光元件102R、第2無機發光元件102G、第3無機發光元件102B向陣列基板2之搭載結束,則如步驟S16所示,將替代無機發光元件102W搭載於陣列基板2之陽極電極112上。更詳細而言,於陣列基板2之預定搭載不良無機發光元件102a之位置,搭載替代無機發光元件102W。於本實施形態,於形成基板202上,即與搭載有第1無機發光元件102R、第2無機發光元件102G、第3無機發光元件102B之形成基板200不同之基板上,形成替代無機發光元件102W。接著,將形成於形成基板202上之替代無機發光元件102W搭載於陣列基板2之陽極電極112上。具體而言,使形成基板202之形成有替代無機發光元件102W之面與陣列基板2之形成有陽極電極112之面對向,自形成基板202之與形成有替代無機發光元件102W之面為相反側之面,對形成基板202上之替代無機發光元件102W照射雷射光LI。藉此,使替代無機發光元件102W自形成基板202上剝離,而將替代無機發光元件102W轉印於陣列基板2之陽極電極112上。另,此處,對位於與預定搭載不良無機發光元件102a之陣列基板2之陽極電極112對向之位置之替代無機發光元件102W,照射雷射光LI。藉此,可僅使形成基板202上之替代無機發光元件102W中之位於與預定搭載不良無機發光元件102a之陽極電極112對向之位置的替代無機發光元件102W剝離,而於預定搭載不良無機發光元件102a之陽極電極112上,搭載替代無機發光元件102W。另,亦可對形成基板202上之替代無機發光元件102W進行不良之檢查,可將並非不良之替代無機發光元件102W搭載於陣列基板2。When the mounting of the first inorganic light emitting element 102R, the second inorganic light emitting element 102G, and the third inorganic light emitting element 102B on the array substrate 2 is completed, as shown in step S16, the substitute inorganic light emitting element 102W is mounted on the anode electrode of the array substrate 2 112 on. More specifically, the replacement inorganic light emitting element 102W is mounted on the position of the array substrate 2 where the defective inorganic light emitting element 102a is to be mounted. In the present embodiment, the substitute inorganic light emitting element 102W is formed on the forming substrate 202, that is, on a substrate different from the forming substrate 200 on which the first inorganic light emitting element 102R, the second inorganic light emitting element 102G, and the third inorganic light emitting element 102B are mounted. . Next, the replacement inorganic light emitting element 102W formed on the formation substrate 202 is mounted on the anode electrode 112 of the array substrate 2 . Specifically, the surface of the substrate 202 on which the substitute inorganic light emitting element 102W is formed is made to face the surface of the array substrate 2 on which the anode electrode 112 is formed, and the surface of the substrate 202 and the surface on which the substitute inorganic light emitting element 102W is formed are opposite. On the side surface, the laser light LI is irradiated to the substitute inorganic light-emitting element 102W on the formation substrate 202 . Thereby, the substitute inorganic light emitting element 102W is peeled off from the formation substrate 202 , and the substitute inorganic light emitting element 102W is transferred onto the anode electrode 112 of the array substrate 2 . In addition, here, the laser light LI is irradiated to the replacement inorganic light emitting element 102W at a position opposite to the anode electrode 112 of the array substrate 2 on which the defective inorganic light emitting element 102a is to be mounted. In this way, only the replacement inorganic light emitting element 102W located at the position opposite to the anode electrode 112 of the intended mounting defective inorganic light emitting element 102a among the replacement inorganic light emitting elements 102W on the formation substrate 202 can be peeled off, and the intended mounting defective inorganic light emitting element 102W can be peeled off. On the anode electrode 112 of the element 102a, a substitute inorganic light-emitting element 102W is mounted. In addition, the replacement inorganic light emitting element 102W on the formation substrate 202 may be inspected for defects, and the replacement inorganic light emitting element 102W that is not defective may be mounted on the array substrate 2 .

於步驟S16將替代無機發光元件102W搭載於陣列基板2上,藉此如步驟S18所示,將不良無機發光元件102a以外之無機發光元件102、與替代無機發光元件102W搭載於陣列基板2上。於本實施形態,雖於步驟S10、S12、S14(第1搭載步驟)搭載不良無機發光元件102a以外之無機發光元件102之後,於步驟S16(第2搭載步驟)搭載替代無機發光元件102W,但順序不限定於此,例如亦可先搭載替代無機發光元件102W。於此情形時,預先檢測形成基板200上之不良無機發光元件102a,檢測陣列基板2上之與不良無機發光元件102a對應之陽極電極112(預定搭載不良無機發光元件102a之陽極電極112)。且,只要對陣列基板2上之與不良無機發光元件102a對應之陽極電極112,搭載替代無機發光元件102W,之後,搭載不良無機發光元件102a以外之無機發光元件102即可。In step S16, the substitute inorganic light emitting element 102W is mounted on the array substrate 2, whereby as shown in step S18, the inorganic light emitting element 102 other than the defective inorganic light emitting element 102a and the substitute inorganic light emitting element 102W are mounted on the array substrate 2. In this embodiment, after the inorganic light-emitting element 102 other than the defective inorganic light-emitting element 102a is mounted in steps S10, S12, and S14 (the first mounting step), the substitute inorganic light-emitting element 102W is mounted in step S16 (the second mounting step), but The order is not limited to this, for example, the replacement inorganic light-emitting element 102W may be mounted first. In this case, the defective inorganic light emitting element 102a on the formation substrate 200 is detected in advance, and the anode electrode 112 corresponding to the defective inorganic light emitting element 102a on the array substrate 2 (the anode electrode 112 on which the defective inorganic light emitting element 102a is scheduled to be mounted) is detected in advance. Furthermore, the replacement inorganic light emitting element 102W may be mounted on the anode electrode 112 corresponding to the defective inorganic light emitting element 102a on the array substrate 2, and then the inorganic light emitting element 102 other than the defective inorganic light emitting element 102a may be mounted.

若已搭載不良無機發光元件102a以外之無機發光元件102與替代無機發光元件102W,則如步驟S20所示,於無機發光元件102上之各者,即不良無機發光元件102a以外之無機發光元件102及替代無機發光元件102W上之各者,形成陰極電極114。藉此,形成包含陽極電極112、無機發光元件102及陰極電極114之無機發光體100。接著,於無機發光體100上,即不良無機發光體100a以外之無機發光體100及替代無機發光體100W上,形成對向陰極電極90e(對向電極形成步驟)。對向陰極電極90e相對於所有無機發光體100共通設置。另,於圖8之例,將不包含陽極電極112及陰極電極114之無機發光元件102形成於形成基板上,並轉印於陣列基板2,但例如亦可將陽極電極112、無機發光元件102及陰極電極114形成於形成基板上,並轉印於陣列基板2。If the inorganic light-emitting element 102 other than the defective inorganic light-emitting element 102a and the replacement inorganic light-emitting element 102W have been mounted, as shown in step S20, each of the inorganic light-emitting elements 102 on the inorganic light-emitting element 102 is the inorganic light-emitting element 102 other than the defective inorganic light-emitting element 102a. And instead of each on the inorganic light-emitting element 102W, the cathode electrode 114 is formed. Thereby, the inorganic light-emitting body 100 including the anode electrode 112 , the inorganic light-emitting element 102 and the cathode electrode 114 is formed. Next, a counter-cathode electrode 90e is formed on the inorganic light-emitting body 100, that is, the inorganic light-emitting body 100 other than the defective inorganic light-emitting body 100a and the substitute inorganic light-emitting body 100W (counter electrode forming step). The opposite cathode electrode 90 e is provided in common with all the inorganic light-emitting bodies 100 . In addition, in the example of FIG. 8, the inorganic light emitting element 102 not including the anode electrode 112 and the cathode electrode 114 is formed on the formation substrate and transferred to the array substrate 2, but for example, the anode electrode 112 and the inorganic light emitting element 102 may also be formed and the cathode electrode 114 are formed on the formation substrate and transferred to the array substrate 2 .

若已形成對向陽極電極90e,則如步驟S22(濾光器部形成步驟)所示,於對向陰極電極90e上之俯視下與替代無機發光體100W重疊之位置,形成濾光器部96。於本製造方法中,例如將液狀之濾光器部96塗佈於對向陰極電極90e上之俯視下與替代無機發光體100W重疊之位置,使液狀之濾光器部96固化,藉此形成濾光器部96。但,亦可將例如固狀之濾光器部96貼附於對向陰極電極90e上之俯視下與替代無機發光體100W重疊之位置。於步驟S22,根據未搭載之不良無機發光體100a之種類,即不良無機發光體100a發出之顏色,選擇濾光器部96,並將選擇之濾光器部96形成於對向陰極電極90e上。即,於搭載有替代無機發光體100W之位置預定搭載之不良無機發光體100a為第1無機發光體100R之情形時,於與其之替代無機發光體100W重疊之位置,形成濾光器部96R,於搭載有替代無機發光體100W之位置預定搭載之不良無機發光體100a為第2無機發光體100G之情形時,於與其之替代無機發光體100W重疊之位置,形成濾光器部96G,於搭載有替代無機發光體100W之位置預定搭載之不良無機發光體100a為第3無機發光體100B之情形時,於與其之替代無機發光體100W之位置,形成濾光器部96B。If the opposite anode electrode 90e has been formed, as shown in step S22 (the step of forming the filter portion), the filter portion 96 is formed on the opposite cathode electrode 90e at the position overlapping the substitute inorganic light-emitting body 100W in plan view. . In the present manufacturing method, for example, the liquid filter portion 96 is applied on the opposing cathode electrode 90e at a position overlapping with the substitute inorganic light-emitting body 100W in plan view, and the liquid filter portion 96 is cured, whereby the liquid filter portion 96 is cured. This forms the filter portion 96 . However, for example, a solid filter portion 96 may be attached to a position on the opposite cathode electrode 90e overlapping the substitute inorganic light-emitting body 100W in plan view. In step S22, the filter portion 96 is selected according to the type of the unmounted defective inorganic light-emitting body 100a, that is, the color emitted by the defective inorganic light-emitting body 100a, and the selected filter portion 96 is formed on the opposite cathode electrode 90e . That is, when the defective inorganic light-emitting body 100a to be mounted at the position where the replacement inorganic light-emitting body 100W is mounted is the first inorganic light-emitting body 100R, the filter portion 96R is formed at the position overlapping the replacement inorganic light-emitting body 100W, When the defective inorganic light-emitting body 100a to be mounted at the position where the replacement inorganic light-emitting body 100W is mounted is the second inorganic light-emitting body 100G, the filter portion 96G is formed at the position overlapping the replacement inorganic light-emitting body 100W, and is mounted on the second inorganic light-emitting body 100G. When the defective inorganic light-emitting body 100a to be mounted at the position replacing the inorganic light-emitting body 100W is the third inorganic light-emitting body 100B, the filter portion 96B is formed at the position replacing the inorganic light-emitting body 100W.

若已形成濾光器部96,則如步驟S24所示,於對向陰極電極90e上形成平坦化膜92及蓋部94,完成顯示裝置1之製造。但,步驟S24之步驟並非必須,亦可於步驟S22形成濾光器部96,而完成顯示裝置1之製造。After the filter portion 96 has been formed, as shown in step S24, the planarizing film 92 and the cover portion 94 are formed on the opposite cathode electrode 90e, and the manufacture of the display device 1 is completed. However, the step of step S24 is not necessary, and the filter portion 96 may be formed in step S22 to complete the manufacture of the display device 1 .

如以上所說明,本實施形態之具備陣列基板2及矩陣狀排列之複數個無機發光元件102之顯示裝置1之製造方法包含檢測步驟、第1搭載步驟、第2搭載步驟、及濾光器部形成步驟。於檢測步驟中,自形成於形成基板200上之無機發光元件102檢測不良之無機發光元件102即不良無機發光元件102a。於第1搭載步驟中,將形成於形成基板200上之無機發光元件102中之不良無機發光元件102a以外之無機發光元件102搭載於陣列基板2上。於第2搭載步驟中,將發出與不良無機發光元件102a不同之顏色之光的替代無機發光元件102W搭載於陣列基板2上。於濾光器部形成步驟中,自來自陣列基板2上之無機發光元件102之光之行進方向觀察(俯視)時,於與替代無機發光元件102W重疊之位置,形成將來自替代無機發光元件102W之光LW 設為與來自不良無機發光元件102a之光相同顏色之光而出射之濾光器部96。As described above, the manufacturing method of the display device 1 including the array substrate 2 and the plurality of inorganic light-emitting elements 102 arranged in a matrix according to the present embodiment includes the detection step, the first mounting step, the second mounting step, and the filter portion forming steps. In the detection step, the defective inorganic light emitting element 102 is detected from the inorganic light emitting element 102 formed on the formation substrate 200 , that is, the defective inorganic light emitting element 102 a. In the first mounting step, the inorganic light-emitting elements 102 other than the defective inorganic light-emitting elements 102 a among the inorganic light-emitting elements 102 formed on the formation substrate 200 are mounted on the array substrate 2 . In the second mounting step, the replacement inorganic light-emitting element 102W that emits light of a different color from the defective inorganic light-emitting element 102a is mounted on the array substrate 2 . In the filter portion forming step, when viewed from the traveling direction of the light from the inorganic light emitting element 102 on the array substrate 2 (planar view), at a position overlapping the substitute inorganic light emitting element 102W, the substitute inorganic light emitting element 102W is formed. The light LW is set to the filter portion 96 from which the light of the same color as the light from the defective inorganic light-emitting element 102a is emitted.

根據本實施形態,藉由不將不良無機發光元件102a搭載於顯示裝置1,而可抑制因不良無機發光元件102a之發光不良導致顯示裝置1之圖像顯示變得不適當。再者,藉由取代不良無機發光元件102a搭載替代無機發光體100W及濾光器部96,而可以替代無機發光體100W及濾光器部96代用應由不良無機發光元件102a負責之像素49之功能,因此即使於製造出不良無機發光元件102a之情形時,亦可適當地顯示圖像。又,所有之第1無機發光元件102R、第2無機發光元件102G、及第3無機發光元件102B皆可能出現不良。於此情形時,若將發出與不良無機發光元件102a相同顏色之光之無機發光元件102設為替代無機發光體,則必須將第1無機發光元件102R、第2無機發光元件102G、及第3無機發光元件102B之各者作為替代無機發光體搭載於顯示裝置1。於此情形時,例如需要第1無機發光元件102R、第2無機發光元件102G、及第3無機發光元件102B之3次量之替代無機發光體之搭載步驟。另一方面,於本實施形態,因藉由濾光器部96表現應由不良無機發光元件102a發出之顏色,故只要對第1無機發光元件102R、第2無機發光元件102G、及第3無機發光元件102B之任一者,準備1種替代無機發光元件102W便足夠。因此,可將替代無機發光元件102W之搭載步驟設為1次,可減少搭載替代無機發光元件102W之步驟之負荷,即製造之作業負荷。According to the present embodiment, by not mounting the defective inorganic light emitting element 102a on the display device 1, it is possible to prevent the image display of the display device 1 from becoming inappropriate due to poor light emission of the defective inorganic light emitting element 102a. Furthermore, by replacing the defective inorganic light-emitting element 102a with the substitute inorganic light-emitting body 100W and the filter portion 96, the pixel 49 that should be responsible for the defective inorganic light-emitting element 102a can be replaced by the inorganic light-emitting body 100W and the filter portion 96. Therefore, even when the defective inorganic light-emitting element 102a is manufactured, an image can be appropriately displayed. In addition, all of the first inorganic light emitting element 102R, the second inorganic light emitting element 102G, and the third inorganic light emitting element 102B may be defective. In this case, if the inorganic light-emitting element 102 that emits light of the same color as the defective inorganic light-emitting element 102a is used as a substitute inorganic light-emitting body, the first inorganic light-emitting element 102R, the second inorganic light-emitting element 102G, and the third inorganic light-emitting element 102R must be replaced. Each of the inorganic light-emitting elements 102B is mounted on the display device 1 as an alternative inorganic light-emitting body. In this case, for example, a step of mounting the substitute inorganic light-emitting body three times for the first inorganic light-emitting element 102R, the second inorganic light-emitting element 102G, and the third inorganic light-emitting element 102B is required. On the other hand, in this embodiment, since the color that should be emitted by the defective inorganic light emitting element 102a is expressed by the filter portion 96, only the first inorganic light emitting element 102R, the second inorganic light emitting element 102G, and the third inorganic light emitting element For any one of the light-emitting elements 102B, it is sufficient to prepare one type of the inorganic light-emitting element 102W instead. Therefore, the mounting step of the substitute inorganic light emitting element 102W can be set once, and the load of the step of mounting the substitute inorganic light emitting element 102W, that is, the manufacturing workload can be reduced.

又,於第2搭載步驟中,於陣列基板2上之預定搭載不良無機發光元件102a之位置,搭載替代無機發光元件102W。藉此,可由替代無機發光元件102W負責預定由不良無機發光元件102a負責之像素49之功能,於製造出不良無機發光元件102a之情形時,亦可適當地顯示圖像。In addition, in the second mounting step, the replacement inorganic light emitting element 102W is mounted on the position on the array substrate 2 where the defective inorganic light emitting element 102a is to be mounted. Thereby, the function of the pixel 49 predetermined by the defective inorganic light emitting element 102a can be performed by the substitute inorganic light emitting element 102W, and the image can be appropriately displayed even when the defective inorganic light emitting element 102a is manufactured.

又,於第2搭載步驟中,將形成於與形成基板200不同之基板(形成基板202)上之替代無機發光元件102W搭載於陣列基板2上。根據本製造方法,因將形成於形成基板202上之替代無機發光元件102W搭載於陣列基板2上,故可將替代無機發光元件102W適當地搭載於陣列基板2上。In addition, in the second mounting step, the substitute inorganic light emitting element 102W formed on the substrate (forming substrate 202 ) different from the forming substrate 200 is mounted on the array substrate 2 . According to this manufacturing method, since the substitute inorganic light emitting element 102W formed on the formation substrate 202 is mounted on the array substrate 2 , the substitute inorganic light emitting element 102W can be appropriately mounted on the array substrate 2 .

又,本製造方法進而包含在搭載於陣列基板2上之無機發光元件102及替代無機發光元件102W之上,形成對向電極(對向陰極電極90e)之對向電極形成步驟。於濾光器部形成步驟中,於對向陰極電極90e上,形成濾光器部96。根據本製造方法,因於對向陰極電極90e上形成濾光器部96,故於製造出不良無機發光元件102a之情形時,亦可適當地顯示圖像。Furthermore, the present manufacturing method further includes a counter electrode forming step of forming a counter electrode (counter cathode electrode 90e) on the inorganic light emitting element 102 mounted on the array substrate 2 and the substitute inorganic light emitting element 102W. In the filter portion forming step, the filter portion 96 is formed on the opposite cathode electrode 90e. According to the present manufacturing method, since the filter portion 96 is formed on the opposing cathode electrode 90e, an image can be appropriately displayed even when the defective inorganic light-emitting element 102a is manufactured.

又,濾光器部96係由透過來自替代無機發光元件102W之光LW 中、與來自不良無機發光元件102a之光相同波段之光的構件構成。藉由使用此種濾光器部96,即使當製造出不良無機發光元件102a之情形時,亦可適當地顯示圖像。Moreover, the filter part 96 is comprised by the member which transmits the light of the same wavelength band as the light from the defective inorganic light emitting element 102a among the light L W from the substitute inorganic light emitting element 102W. By using such a filter portion 96, even when the defective inorganic light-emitting element 102a is manufactured, an image can be appropriately displayed.

形成於形成基板200上之無機發光元件102發出紅色、綠色、或藍色之任一種光,替代無機發光元件102W發出白色之光。藉由使用發出白色之光之替代無機發光元件102W,可藉由濾光器部96設為紅色、綠色及藍色之光,即使當製造出不良無機發光元件102a之情形時,亦可適當地顯示圖像。The inorganic light-emitting element 102 formed on the formation substrate 200 emits any one of red, green, or blue light, instead of the inorganic light-emitting element 102W, which emits white light. By using the replacement inorganic light emitting element 102W that emits white light, red, green, and blue light can be set by the filter portion 96, and even when the defective inorganic light emitting element 102a is produced, it can be appropriately Display the image.

本實施形態之顯示裝置1具備矩陣狀排列之複數個無機發光元件102、與濾光器部96。複數個無機發光元件102具備發出特定顏色之光的無機發光元件102、及發出與特定顏色之光不同顏色(替代顏色)之光LW 的替代無機發光元件102W。於自來自無機發光元件102之光之行進方向觀察(俯視)時,濾光器部96設置於與替代無機發光元件102W重疊之位置,將來自替代無機發光元件102W之光LW 設為與特定顏色之光相同顏色之光而出射。即,本實施形態之顯示裝置1中,自替代無機發光元件102W發出並透過濾光器部96之光之顏色,與自其他無機發光元件102發出之光之顏色相同。因此,根據顯示裝置1,因可藉由替代無機發光元件102W及濾光器部96而發出未搭載之不良無機發光元件102a所應發出之顏色之光,故即使當製造出不良無機發光元件102a之情形時,亦可適當地顯示圖像。The display device 1 of the present embodiment includes a plurality of inorganic light-emitting elements 102 arranged in a matrix, and a filter portion 96 . The plurality of inorganic light emitting elements 102 include inorganic light emitting elements 102 that emit light of a specific color, and substitute inorganic light emitting elements 102W that emit light L W of a different color (substitute color) from the light of the specific color. When viewed from the traveling direction of the light from the inorganic light-emitting element 102 (planar view), the filter portion 96 is provided at a position overlapping the substitute inorganic light-emitting element 102W, and the light LW from the substitute inorganic light-emitting element 102W is set to be the same as the specific light-emitting element 102W. Light of color is emitted from light of the same color. That is, in the display device 1 of the present embodiment, the color of the light emitted from the substitute inorganic light emitting element 102W and transmitted through the filter portion 96 is the same as the color of the light emitted from the other inorganic light emitting elements 102 . Therefore, according to the display device 1, light of the color that should be emitted by the unmounted defective inorganic light emitting element 102a can be emitted by substituting the inorganic light emitting element 102W and the filter portion 96, so even when the defective inorganic light emitting element 102a is manufactured In this case, images can also be appropriately displayed.

以下,對本實施形態之另一例進行說明。圖9係顯示搭載有替代無機發光體之情形之另一例之模式圖。例如如圖9所示,本製造方法亦可於顯示裝置1之對向陰極電極90e之上側之面90ea1,形成凹部90eb。凹部90eb係形成於對向陰極電極90e之上側之面90ea1的開口,未貫通至對向陰極電極90e之下側之面90ea2。凹部90eb於俯視下,設置於與替代無機發光元件102W重疊之位置。藉由如此設置凹部90eb,可於凹部90eb中設置濾光器部96,可容易地將濾光器部96定位,且於塗佈液狀之濾光器部96之情形時,可抑制濾光器部96擴展至與其他無機發光體100重疊之位置。另,凹部90eb可僅形成於與替代無機發光元件102W重疊之位置,亦可設置於與所有無機發光體100重疊之位置。於將凹部90eb設置於與所有無機發光體100重疊之位置之情形時,僅於與替代無機發光元件102W重疊之凹部90eb,形成濾光器部96。Hereinafter, another example of this embodiment will be described. FIG. 9 is a schematic view showing another example of a case where a substitute inorganic light-emitting body is mounted. For example, as shown in FIG. 9 , the present manufacturing method may also form a concave portion 90eb on a surface 90ea1 on the upper side of the opposite cathode electrode 90e of the display device 1 . The concave portion 90eb is an opening formed in the upper surface 90ea1 of the opposing cathode electrode 90e, and does not penetrate to the lower surface 90ea2 of the opposing cathode electrode 90e. The recessed part 90eb is provided in the position which overlaps with the substitute inorganic light-emitting element 102W in plan view. By providing the concave portion 90eb in this way, the filter portion 96 can be provided in the concave portion 90eb, the filter portion 96 can be easily positioned, and when the liquid filter portion 96 is applied, filtering can be suppressed. The device portion 96 extends to a position overlapping the other inorganic light-emitting bodies 100 . In addition, the concave portion 90eb may be formed only at a position overlapping the substitute inorganic light emitting element 102W, or may be formed at a position overlapping all the inorganic light emitting bodies 100 . When the concave portion 90eb is provided at a position overlapping all the inorganic light-emitting bodies 100, the filter portion 96 is formed only in the concave portion 90eb overlapping with the substitute inorganic light-emitting element 102W.

圖10係顯示搭載有替代無機發光體之情形之另一例之模式圖。本實施形態之無機發光體100如圖5所示,係將設置於下部之陽極電極112連接於對向陽極電極50e,將設置於上部之陰極電極114連接於對向陰極電極90e之類型(以下,稱為面朝上型)。然而,無機發光體100不限定於面朝上型。例如,無機發光體100亦可如圖10所示,係下部連接於對向陽極電極50e與對向陰極電極90e之兩者之面朝下型。FIG. 10 is a schematic view showing another example of a case where a substitute inorganic light-emitting body is mounted. As shown in FIG. 5 , the inorganic light-emitting body 100 of this embodiment is a type in which the anode electrode 112 provided in the lower part is connected to the counter anode electrode 50e, and the cathode electrode 114 provided in the upper part is connected to the counter cathode electrode 90e (hereinafter , called the face-up type). However, the inorganic light-emitting body 100 is not limited to the face-up type. For example, as shown in FIG. 10 , the inorganic light-emitting body 100 may also be a face-down type in which the lower part is connected to both the opposite anode electrode 50e and the opposite cathode electrode 90e.

於面朝下型中,無機發光元件102之n型被覆層104構成為俯視下,面積大於p型被覆層106及發光層108。無機發光體100包含n型被覆層104與p型被覆層106及發光層108重疊之區域AR1、及n型被覆層104不與p型被覆層106及發光層108重疊之區域AR2。於區域AR1中,無機發光體100朝向上側,依序積層有對向陽極電極50e、連接層50f、陽極電極112、p型被覆層106、發光層108、及n型被覆層104。另一方面,於區域AR2中,無機發光體100朝向上側,依序積層有對向陰極電極90e、連接層90f、陰極電極114a、n型被覆層104。與圖5不同,圖0之對向陰極電極90e設置於無機發光元件102更下側。連接層90f亦可由例如與連接層50f相同之構件構成。又,陰極電極114a亦可與圖5所示之陰極電極114不同而不具有透光性,只要為具有導電性之材料即可。例如,陰極電極114a包含鈦(Ti)與鋁(Al),將例如鈦層與鋁層沿第3方向Dz積層。In the face-down type, the n-type cladding layer 104 of the inorganic light-emitting element 102 is configured to have a larger area than the p-type cladding layer 106 and the light-emitting layer 108 when viewed from above. The inorganic light-emitting body 100 includes a region AR1 where the n-type cladding layer 104 overlaps with the p-type cladding layer 106 and the light-emitting layer 108 , and a region AR2 where the n-type cladding layer 104 does not overlap with the p-type cladding layer 106 and the light-emitting layer 108 . In the region AR1, the inorganic light-emitting body 100 faces upward, and the opposing anode electrode 50e, the connection layer 50f, the anode electrode 112, the p-type cladding layer 106, the light-emitting layer 108, and the n-type cladding layer 104 are laminated in this order. On the other hand, in the region AR2, the inorganic light-emitting body 100 faces upward, and the opposing cathode electrode 90e, the connection layer 90f, the cathode electrode 114a, and the n-type cladding layer 104 are laminated in this order. Different from FIG. 5 , the opposite cathode electrode 90 e of FIG. 0 is disposed on the lower side of the inorganic light-emitting element 102 . The connection layer 90f may be formed of, for example, the same member as the connection layer 50f. In addition, the cathode electrode 114a may be different from the cathode electrode 114 shown in FIG. 5 and not have light transmittance, as long as it is a material having conductivity. For example, the cathode electrode 114a includes titanium (Ti) and aluminum (Al), and for example, a titanium layer and an aluminum layer are laminated in the third direction Dz.

於面朝下型中,因對向陰極電極90e設置於無機發光元件102之下側,故於替代無機發光體100W中,於替代無機發光體100W之n型被覆層104之上側,設置有濾光器部96。In the face-down type, since the opposite cathode electrode 90e is provided on the lower side of the inorganic light-emitting element 102, in the substitute inorganic light-emitting body 100W, a filter is provided on the upper side of the n-type cladding layer 104 of the substitute inorganic light-emitting body 100W. Optical part 96 .

圖11係顯示搭載有替代無機發光體之情形之另一例之模式圖。於圖7中,雖顯示第1無機發光元件102R為不良無機發光元件102a之情形之例,但圖11顯示其他之第1無機發光元件102R為不良無機發光元件102a之情形之例。FIG. 11 is a schematic view showing another example of a case where a substitute inorganic light-emitting body is mounted. FIG. 7 shows an example of a case where the first inorganic light emitting element 102R is a defective inorganic light emitting element 102a, but FIG. 11 shows an example of a case where the other first inorganic light emitting element 102R is a defective inorganic light emitting element 102a.

圖11(A)顯示檢測出1個第2無機發光元件102G作為不良無機發光元件102a之情形之例。於此情形時,於預定搭載作為不良無機發光元件102a檢測出之第2無機發光元件102G之位置,搭載替代無機發光元件102W。且,於俯視下,於與替代無機發光體100W重疊之位置,設置濾光器部96G。圖11(B)顯示檢測出1個第3無機發光元件102B作為不良無機發光元件102a之情形之例。於此情形時,於預定搭載作為不良無機發光元件102a檢測出之第3無機發光元件102B之位置,搭載替代無機發光元件102W。且,於俯視下,於與替代無機發光體100W重疊之位置,設置濾光器部96B。FIG. 11(A) shows an example of a case where one second inorganic light-emitting element 102G is detected as a defective inorganic light-emitting element 102a. In this case, the substitute inorganic light emitting element 102W is mounted at the position where the second inorganic light emitting element 102G detected as the defective inorganic light emitting element 102a is to be mounted. In addition, in a plan view, the filter portion 96G is provided at a position overlapping with the substitute inorganic light-emitting body 100W. FIG. 11(B) shows an example of a case where one third inorganic light emitting element 102B is detected as a defective inorganic light emitting element 102a. In this case, the substitute inorganic light emitting element 102W is mounted at the position where the third inorganic light emitting element 102B detected as the defective inorganic light emitting element 102a is to be mounted. In addition, in a plan view, the filter portion 96B is provided at a position overlapping with the substitute inorganic light-emitting body 100W.

圖11(C)顯示檢測出第1無機發光元件102R與第2無機發光元件102G作為不良無機發光元件102a之情形之例。於此情形時,於預定搭載作為不良無機發光元件102a檢測出之第1無機發光元件102R之位置、與預定搭載作為不良無機發光元件102a檢測出之第2無機發光元件102G之位置,搭載有替代無機發光元件102W。且,於與搭載到預定搭載第1無機發光元件102R之位置之替代無機發光元件102W重疊之位置,設置有濾光器部96R。且,於與搭載到預定搭載第2無機發光元件102G之位置之替代無機發光元件102W重疊之位置,設置有濾光器部96G。FIG. 11(C) shows an example of a case where the first inorganic light emitting element 102R and the second inorganic light emitting element 102G are detected as the defective inorganic light emitting element 102a. In this case, at the position where the first inorganic light emitting element 102R detected as the defective inorganic light emitting element 102a is scheduled to be mounted, and the position where the second inorganic light emitting element 102G detected as the defective inorganic light emitting element 102a is scheduled to be mounted, a substitute is mounted. Inorganic light-emitting element 102W. Moreover, the filter part 96R is provided in the position which overlaps with the substitute inorganic light emitting element 102W mounted in the position where the 1st inorganic light emitting element 102R is to be mounted. Moreover, the filter part 96G is provided in the position which overlaps with the substitute inorganic light emitting element 102W mounted in the position where the 2nd inorganic light emitting element 102G is to be mounted.

圖11(D)顯示檢測出第1無機發光元件102R與第3無機發光元件102B作為不良無機發光元件102a之情形之例。於此情形時,於預定搭載作為不良無機發光元件102a檢測出之第1無機發光元件102R之位置、與預定搭載作為不良無機發光元件102a檢測出之第3無機發光元件102B之位置,搭載有替代無機發光元件102W。且,於與搭載到預定搭載第1無機發光元件102R之位置之替代無機發光元件102W重疊之位置,設置有濾光器部96R。且,於與搭載到預定搭載第3無機發光元件102B之位置之替代無機發光元件102W重疊之位置,設置有濾光器部96B。FIG. 11(D) shows an example of the case where the first inorganic light emitting element 102R and the third inorganic light emitting element 102B are detected as the defective inorganic light emitting element 102a. In this case, at the position where the first inorganic light emitting element 102R detected as the defective inorganic light emitting element 102a is scheduled to be mounted, and the position where the third inorganic light emitting element 102B detected as the defective inorganic light emitting element 102a is scheduled to be mounted, a substitute is mounted. Inorganic light-emitting element 102W. Moreover, the filter part 96R is provided in the position which overlaps with the substitute inorganic light emitting element 102W mounted in the position where the 1st inorganic light emitting element 102R is to be mounted. Moreover, the filter part 96B is provided in the position which overlaps with the substitute inorganic light emitting element 102W mounted in the position where the 3rd inorganic light emitting element 102B is to be mounted.

圖11(E)顯示檢測出第2無機發光元件102G與第3無機發光元件102B作為不良無機發光元件102a之情形之例。於此情形時,於預定搭載作為不良無機發光元件102a檢測出之第2無機發光元件102G之位置、與預定搭載作為不良無機發光元件102a檢測出之第3無機發光元件102B之位置,搭載有替代無機發光元件102W。且,於與搭載到預定搭載第2無機發光元件102G之位置之替代無機發光元件102W重疊之位置,設置有濾光器部96G。且,於與搭載到預定搭載第3無機發光元件102B之位置之替代無機發光元件102W重疊之位置,設置有濾光器部96B。FIG. 11(E) shows an example of a case where the second inorganic light emitting element 102G and the third inorganic light emitting element 102B are detected as the defective inorganic light emitting element 102a. In this case, at the position where the second inorganic light emitting element 102G detected as the defective inorganic light emitting element 102a is to be mounted, and the position where the third inorganic light emitting element 102B detected as the defective inorganic light emitting element 102a is scheduled to be mounted, a substitute is mounted. Inorganic light-emitting element 102W. Moreover, the filter part 96G is provided in the position which overlaps with the substitute inorganic light emitting element 102W mounted in the position where the 2nd inorganic light emitting element 102G is to be mounted. Moreover, the filter part 96B is provided in the position which overlaps with the substitute inorganic light emitting element 102W mounted in the position where the 3rd inorganic light emitting element 102B is to be mounted.

圖11(F)顯示檢測出第1無機發光元件102R、第2無機發光元件102G及第3無機發光元件102B作為不良無機發光元件102a之情形之例。於此情形時,於預定搭載作為不良無機發光元件102a檢測出之第1無機發光元件102R之位置、預定搭載作為不良無機發光元件102a檢測出之第2無機發光元件102G之位置、及預定搭載作為不良無機發光元件102a檢測出之第3無機發光元件102B之位置,搭載有替代無機發光元件102W。且,於與搭載到預定搭載第1無機發光元件102R之位置之替代無機發光元件102W重疊之位置,設置有濾光器部96R。且,於與搭載到預定搭載第2無機發光元件102G之位置之替代無機發光元件102W重疊之位置,設置有濾光器部96G。且,於與搭載到預定搭載第3無機發光元件102B之位置之替代無機發光元件102W重疊之位置,設置有濾光器部96B。FIG. 11(F) shows an example of a case where the first inorganic light emitting element 102R, the second inorganic light emitting element 102G, and the third inorganic light emitting element 102B are detected as the defective inorganic light emitting element 102a. In this case, the position where the first inorganic light emitting element 102R detected as the defective inorganic light emitting element 102a is scheduled to be mounted, the position where the second inorganic light emitting element 102G detected as the defective inorganic light emitting element 102a is scheduled to be mounted, and the In the position of the third inorganic light emitting element 102B detected by the defective inorganic light emitting element 102a, a substitute inorganic light emitting element 102W is mounted. Moreover, the filter part 96R is provided in the position which overlaps with the substitute inorganic light emitting element 102W mounted in the position where the 1st inorganic light emitting element 102R is to be mounted. Moreover, the filter part 96G is provided in the position which overlaps with the substitute inorganic light emitting element 102W mounted in the position where the 2nd inorganic light emitting element 102G is to be mounted. Moreover, the filter part 96B is provided in the position which overlaps with the substitute inorganic light emitting element 102W mounted in the position where the 3rd inorganic light emitting element 102B is to be mounted.

又,應理解關於自本說明書記載而明瞭之藉由本實施形態敘述之態樣獲得之其他作用效果者、或業者可適當想到者,當然為藉由本發明而獲得者。In addition, it should be understood that other effects obtained by the aspect described in this embodiment, which are clear from the description of the present specification, or those that can be appropriately conceived by the industry, are of course obtained by the present invention.

1:顯示裝置 2:陣列基板 10:基板 10a:第1面 10b:第2面 12:驅動電路 20:底塗層 21:第1閘極電極 24:絕緣膜 25:半導體層 27:通道區域 29:絕緣膜 31:第2閘極電極 31a:閘極線 35:絕緣膜 41d:汲極電極 41s:源極電極 42:絕緣膜 43d:汲極連接配線 43s:源極連接配線 45:絕緣膜 49:像素 49B:第3像素 49G:第2像素 49R:第1像素 50e:對向陽極電極 50f:連接層 60:陰極配線 66:絕緣膜 70:絕緣膜 80:平坦化膜 90e:對向陰極電極(對向電極) 90ea1:面 90ea2:面 90eb:凹部 90f:連接層 92:平坦化膜 94:蓋部 96:濾光器部 96B:濾光器部 96G:濾光器部 96R:濾光器部 100:無機發光體 100a:不良無機發光體 100B:第3無機發光體 100G:第2無機發光體 100R:第1無機發光體 100W:替代無機發光體 102:無機發光元件 102a:不良無機發光元件 102B:第3無機發光元件 102G:第2無機發光元件 102R:第1無機發光元件 102W:替代無機發光元件 104:n型被覆層 106:p型被覆層 108:發光層 110:陽極電極 112:陽極電極 114:陰極電極 114a:陰極電極 200:形成基板 200B:形成基板 200G:形成基板 200R:形成基板 210:驅動IC AA:顯示區域 AR1:區域 AR2:區域 BCT:發光控制電晶體 BG:發光控制掃描線 CH1:接觸孔 Cs1:電容 Cs2:電容 DRT:驅動電晶體 Dx:第1方向 Dy:第2方向 Dz:第3方向 GA:周邊區域 IG:初始化控制掃描線 IST:初始化電晶體 L1:陽極電源線 L2:影像信號線 L3:重設信號線 L4:初始化信號線 L10:陰極電源線 LB :光 LG :光 LI:雷射光 LR :光 LW :光 Pix:像素 RG:重設控制掃描線 RST:重設電晶體 S10:步驟 S12:步驟 S14:步驟 S16:步驟 S18:步驟 S20:步驟 S22:步驟 S24:步驟 SG:寫入控制掃描線 SST:寫入電晶體 Tr:電晶體 TrC:電晶體 PICA:像素電路 PVDD:陽極電源電位 PVSS:陰極電源電位 Vbg:發光控制信號 Vig:初始化控制信號 Vini:初始化電位 Vrg:重設控制信號 Vrst:重設電源電位 Vsg:寫入控制信號 Vsig:影像信號1: Display device 2: Array substrate 10: Substrate 10a: First surface 10b: Second surface 12: Driving circuit 20: Undercoat layer 21: First gate electrode 24: Insulating film 25: Semiconductor layer 27: Channel region 29 : insulating film 31 : second gate electrode 31 a : gate line 35 : insulating film 41 d : drain electrode 41 s : source electrode 42 : insulating film 43 d : drain connection wiring 43 s : source connection wiring 45 : insulating film 49 : pixel 49B: 3rd pixel 49G: 2nd pixel 49R: 1st pixel 50e: opposite anode electrode 50f: connecting layer 60: cathode wiring 66: insulating film 70: insulating film 80: flattening film 90e: opposite cathode electrode (Counter electrode) 90ea1: Surface 90ea2: Surface 90eb: Recess 90f: Connection layer 92: Flattening film 94: Cover 96: Filter 96B: Filter 96G: Filter 96R: Filter Section 100: Inorganic light-emitting body 100a: Defective inorganic light-emitting body 100B: Third inorganic light-emitting body 100G: Second inorganic light-emitting body 100R: First inorganic light-emitting body 100W: Alternative inorganic light-emitting body 102: Inorganic light-emitting element 102a: Defective inorganic light-emitting element 102B: third inorganic light emitting element 102G: second inorganic light emitting element 102R: first inorganic light emitting element 102W: alternative inorganic light emitting element 104: n-type coating layer 106: p-type coating layer 108: light-emitting layer 110: anode electrode 112: anode Electrode 114: Cathode electrode 114a: Cathode electrode 200: Forming substrate 200B: Forming substrate 200G: Forming substrate 200R: Forming substrate 210: Driving IC AA: Display area AR1: Area AR2: Area BCT: Light emission control transistor BG: Light emission control scan Line CH1: Contact hole Cs1: Capacitance Cs2: Capacitance DRT: Driving transistor Dx: First direction Dy: Second direction Dz: Third direction GA: Peripheral area IG: Initialization control scan line IST: Initialization transistor L1: Anode power supply Line L2: Image Signal Line L3: Reset Signal Line L4: Initialization Signal Line L10: Cathode Power Line L B : Light L G : Light LI: Laser Light L R : Light L W : Light Pix: Pixel RG: Reset Control Scan Line RST: Reset Transistor S10: Step S12: Step S14: Step S16: Step S18: Step S20: Step S22: Step S24: Step SG: Write Control Scan Line SST: Write Transistor Tr: Transistor TrC : transistor PICA: pixel circuit PVDD: anode power supply potential PVSS: cathode power supply potential Vbg: light emission control signal Vig: initialization control signal Vini: initialization potential Vrg: reset control signal Vrst: reset power supply potential Vsg: write control signal Vsig : Video signal

圖1係顯示本實施形態之顯示裝置之構成例之俯視圖。 圖2係顯示複數個像素之俯視圖。 圖3係顯示顯示裝置之像素電路之構成例之電路圖。 圖4係圖1之IV-IV’剖視圖。 圖5係顯示本實施形態之無機發光體之構成例之剖視圖。 圖6係顯示搭載有替代無機發光體之情形之例之模式圖。 圖7係顯示搭載有替代無機發光體之情形之例之模式圖。 圖8係說明本實施形態之顯示裝置之製造方法之圖。 圖9係顯示搭載有替代無機發光體之情形之另一例之模式圖。 圖10係顯示搭載有替代無機發光體之情形之另一例之模式圖。 圖11(A)~(F)係顯示搭載有替代無機發光體之情形之另一例之模式圖。FIG. 1 is a plan view showing a configuration example of the display device of the present embodiment. FIG. 2 is a top view showing a plurality of pixels. FIG. 3 is a circuit diagram showing a configuration example of a pixel circuit of a display device. Fig. 4 is a cross-sectional view taken along line IV-IV' of Fig. 1 . FIG. 5 is a cross-sectional view showing a configuration example of the inorganic light-emitting body of the present embodiment. FIG. 6 is a schematic view showing an example of a case where an alternative inorganic light-emitting body is mounted. FIG. 7 is a schematic diagram showing an example of a case where an alternative inorganic light-emitting body is mounted. FIG. 8 is a diagram illustrating a method of manufacturing the display device of the present embodiment. FIG. 9 is a schematic view showing another example of a case where a substitute inorganic light-emitting body is mounted. FIG. 10 is a schematic view showing another example of a case where a substitute inorganic light-emitting body is mounted. FIGS. 11(A) to (F) are schematic diagrams showing another example of the case where a substitute inorganic light-emitting body is mounted.

1:顯示裝置 1: Display device

2:陣列基板 2: Array substrate

50f:連接層 50f: Connection layer

70:絕緣膜 70: insulating film

80:平坦化膜 80: Flattening film

90e:對向陰極電極(對向電極) 90e: Counter cathode electrode (counter electrode)

92:平坦化膜 92: Flattening film

94:蓋部 94: Cover

96:濾光器部 96: Filter part

96R:濾光器部 96R: Filter section

100:無機發光體 100: Inorganic luminophore

100B:第3無機發光體 100B: The third inorganic light-emitting body

100G:第2無機發光體 100G: 2nd inorganic luminophore

100R:第1無機發光體 100R: 1st inorganic light emitter

100W:替代無機發光體 100W: Alternative to inorganic light emitters

102:無機發光元件 102: Inorganic light-emitting element

102a:不良無機發光元件 102a: Defective inorganic light-emitting element

102B:第3無機發光元件 102B: The third inorganic light-emitting element

102G:第2無機發光元件 102G: Second inorganic light-emitting element

102R:第1無機發光元件 102R: The first inorganic light-emitting element

102W:替代無機發光元件 102W: Alternative to inorganic light-emitting elements

112:陽極電極 112: Anode electrode

114:陰極電極 114: Cathode electrode

200:形成基板 200: Forming the substrate

200B:形成基板 200B: Forming the substrate

200G:形成基板 200G: Forming the substrate

200R:形成基板 200R: Forming the substrate

Dx:第1方向 Dx: 1st direction

Dy:第2方向 Dy: 2nd direction

Dz:第3方向 Dz: 3rd direction

LI:雷射光 LI: laser light

S10:步驟 S10: Steps

S12:步驟 S12: Steps

S14:步驟 S14: Steps

S16:步驟 S16: Steps

S18:步驟 S18: Steps

S20:步驟 S20: Steps

S22:步驟 S22: Step

S24:步驟 S24: Step

Claims (6)

一種顯示裝置之製造方法,其係具備陣列基板及矩陣狀排列之複數個無機發光元件的顯示裝置之製造方法,且具備:檢測步驟,其自形成於形成基板上之複數個上述無機發光元件,檢測不良之上述無機發光元件即不良無機發光元件;第1搭載步驟,其將形成於上述形成基板上之上述無機發光元件中之上述不良無機發光元件以外的上述無機發光元件,搭載於上述陣列基板上;第2搭載步驟,其將發出與上述不良無機發光元件不同顏色之光的替代無機發光元件,搭載於上述陣列基板上;及濾光器部形成步驟,其於與上述替代無機發光元件重疊之位置形成濾光器部,該濾光器部將來自上述替代無機發光元件之光設為與來自上述不良無機發光元件之光相同顏色之光而出射。 A method of manufacturing a display device, which is a method of manufacturing a display device including an array substrate and a plurality of inorganic light-emitting elements arranged in a matrix, and comprising: a detection step, which is formed from the plurality of inorganic light-emitting elements formed on a formation substrate, The above-mentioned inorganic light-emitting element that is defective in detection is the defective inorganic light-emitting element; the first mounting step is to mount the above-mentioned inorganic light-emitting element other than the above-mentioned defective inorganic light-emitting element among the above-mentioned inorganic light-emitting elements formed on the above-mentioned forming substrate on the above-mentioned array substrate. a second mounting step of mounting a substitute inorganic light-emitting element that emits light of a different color from the defective inorganic light-emitting element on the array substrate; and a filter portion forming step of overlapping the substitute inorganic light-emitting element A filter portion is formed at the position of the filter portion, and the filter portion emits the light from the replacement inorganic light emitting element as light of the same color as the light from the defective inorganic light emitting element. 如請求項1之顯示裝置之製造方法,其中於上述第2搭載步驟中,於上述陣列基板上之預定搭載上述不良無機發光元件之位置,搭載上述替代無機發光元件。 The method for manufacturing a display device according to claim 1, wherein in the second mounting step, the replacement inorganic light emitting element is mounted on the array substrate at a position where the defective inorganic light emitting element is to be mounted. 如請求項1或2之顯示裝置之製造方法,其中於上述第2搭載步驟中,將形成於與上述形成基板不同之基板上的上述替代無機發光元件,搭載於上述陣列基板上。 The method for manufacturing a display device according to claim 1 or 2, wherein in the second mounting step, the replacement inorganic light-emitting element formed on a substrate different from the formation substrate is mounted on the array substrate. 如請求項1或2之顯示裝置之製造方法,其進而包含對向電極形成步驟,上述對向電極形成步驟係:在搭載於上述陣列基板上之上述無機發光元件及上述替代無機發光元件之上,形成對向電極,且於上述濾光器部形成步驟中,於上述對向電極上,形成上述濾光器部。 The method for manufacturing a display device according to claim 1 or 2, further comprising a counter electrode forming step, wherein the counter electrode forming step is: on the inorganic light emitting element and the substitute inorganic light emitting element mounted on the array substrate , forming a counter electrode, and in the filter part forming step, the filter part is formed on the counter electrode. 如請求項1或2之顯示裝置之製造方法,其中上述濾光器部係由透過來自上述替代無機發光元件之光中、與來自上述不良無機發光元件之光相同波段之光的構件構成。 The method of manufacturing a display device according to claim 1 or 2, wherein the filter portion is composed of a member that transmits light of the same wavelength band as the light from the defective inorganic light emitting element among the light from the substitute inorganic light emitting element. 如請求項1或2之顯示裝置之製造方法,其中形成於上述形成基板上之無機發光元件發出紅色、綠色、或藍色之任一種光,上述替代無機發光元件發出白色之光。 The method for manufacturing a display device according to claim 1 or 2, wherein the inorganic light-emitting element formed on the above-mentioned forming substrate emits any light of red, green, or blue, and the substitute inorganic light-emitting element emits white light.
TW109129107A 2019-08-28 2020-08-26 Manufacturing method of display device and display device TWI753549B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019156126A JP7333226B2 (en) 2019-08-28 2019-08-28 Display device manufacturing method and display device
JP2019-156126 2019-08-28

Publications (2)

Publication Number Publication Date
TW202115941A TW202115941A (en) 2021-04-16
TWI753549B true TWI753549B (en) 2022-01-21

Family

ID=74675801

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109129107A TWI753549B (en) 2019-08-28 2020-08-26 Manufacturing method of display device and display device

Country Status (3)

Country Link
JP (1) JP7333226B2 (en)
CN (1) CN112447120B (en)
TW (1) TWI753549B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170358624A1 (en) * 2016-06-13 2017-12-14 Seoul Semiconductor Co., Ltd. Display apparatus and manufacturing method thereof
US20190080970A1 (en) * 2017-09-11 2019-03-14 Vuereal Inc. Repair techniques for micro-led devices and arrays
CN110050511A (en) * 2016-12-02 2019-07-23 Lg电子株式会社 Use the display device of semiconductor light-emitting-diode
TW202032779A (en) * 2019-02-20 2020-09-01 友達光電股份有限公司 Light emitting diode panel and manufacturing method thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4674453B2 (en) 2004-08-27 2011-04-20 ソニー株式会社 Element connection wiring, image display device, and wiring cutting method
US8877524B2 (en) 2008-03-31 2014-11-04 Cree, Inc. Emission tuning methods and devices fabricated utilizing methods
JP5459142B2 (en) * 2010-08-11 2014-04-02 セイコーエプソン株式会社 ORGANIC EL DEVICE, METHOD FOR MANUFACTURING ORGANIC EL DEVICE, AND ELECTRONIC DEVICE
KR101954973B1 (en) * 2012-09-19 2019-03-08 삼성디스플레이 주식회사 Organic light emitting display
CN104903784B (en) * 2012-12-27 2017-11-28 凸版印刷株式会社 Liquid crystal display device, color filter substrate, and color filter substrate manufacturing method
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
KR102294163B1 (en) * 2014-12-05 2021-08-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting module
EP3790361B1 (en) 2015-07-23 2022-10-19 Seoul Semiconductor Co., Ltd. Display apparatus
CN106098720A (en) * 2016-06-20 2016-11-09 深圳市华星光电技术有限公司 Micro-light emitting diode indicator
KR102605472B1 (en) * 2016-09-09 2023-11-23 엘지전자 주식회사 Display device using semiconductor light emitting device
CN106876406B (en) 2016-12-30 2023-08-08 上海君万微电子科技有限公司 Structure and preparation method of LED full-color display device based on III-V nitride semiconductor
US20190181122A1 (en) 2017-12-13 2019-06-13 Innolux Corporation Electronic device and method of manufacturing the same
CN114759060A (en) * 2017-12-13 2022-07-15 群创光电股份有限公司 Electronic device and method for manufacturing the same
CN108877653B (en) * 2018-06-29 2021-11-02 京东方科技集团股份有限公司 Pixel circuit, display device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170358624A1 (en) * 2016-06-13 2017-12-14 Seoul Semiconductor Co., Ltd. Display apparatus and manufacturing method thereof
CN110050511A (en) * 2016-12-02 2019-07-23 Lg电子株式会社 Use the display device of semiconductor light-emitting-diode
US20190080970A1 (en) * 2017-09-11 2019-03-14 Vuereal Inc. Repair techniques for micro-led devices and arrays
TW202032779A (en) * 2019-02-20 2020-09-01 友達光電股份有限公司 Light emitting diode panel and manufacturing method thereof

Also Published As

Publication number Publication date
JP7333226B2 (en) 2023-08-24
TW202115941A (en) 2021-04-16
CN112447120B (en) 2023-08-01
JP2021033178A (en) 2021-03-01
CN112447120A (en) 2021-03-05

Similar Documents

Publication Publication Date Title
KR102767277B1 (en) Light emitting diode display apparatus
US10665583B2 (en) Display device
TWI741805B (en) Repair method of display device
JP7670712B2 (en) Display device
CN113614818B (en) Display device
WO2020203701A1 (en) Display device
US9111889B2 (en) Display device
US11817038B2 (en) Display system
US20220302096A1 (en) Display device
JP7507036B2 (en) Display device
TWI753549B (en) Manufacturing method of display device and display device
JP2022001911A (en) Display device
US12080206B2 (en) Method for repairing display device and display device
JP2022098895A (en) Display device and manufacturing method thereof
US12283583B2 (en) Display device including plurality of light-emitting elements with different emission wavelength variations
TWI757822B (en) Display device and method of manufacturing the same
KR20260015034A (en) Display device
JP2021196583A (en) Display device
WO2020203729A1 (en) Method for manufacturing inorganic light-emitting body