TWI753477B - System and method for monitoring optical thin film deposition - Google Patents
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- 238000012544 monitoring process Methods 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims description 23
- 230000003287 optical effect Effects 0.000 title abstract description 23
- 238000000427 thin-film deposition Methods 0.000 title abstract 2
- 230000008033 biological extinction Effects 0.000 claims abstract description 56
- 238000000576 coating method Methods 0.000 claims abstract description 47
- 239000011248 coating agent Substances 0.000 claims abstract description 46
- 238000001228 spectrum Methods 0.000 claims abstract description 20
- 239000012788 optical film Substances 0.000 claims description 126
- 239000010408 film Substances 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 13
- 238000002834 transmittance Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 3
- 238000012986 modification Methods 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
Description
本發明是關於一種製鍍光學薄膜之監控系統,且特別是關於一種製鍍光學薄膜之監控系統及其方法。The present invention relates to a monitoring system for producing optical films, and more particularly, to a monitoring system for producing optical films and a method thereof.
光學薄膜之製鍍的成效取決在鍍膜中對於各層膜的光學特性(例如折射率、吸收係數等)與膜厚掌控的精確性,目前一般所使用的監控方式有:時間監控、石英振盪片監控、單波長光學監控及廣波域光學監控。時間監控的缺點在於無法監控鍍率、折射率、吸收係數及不具備對前層錯誤補償的功效。石英振盪片監控的缺點在於無法監控折射率、吸收係數及不具備對前層錯誤補償的功效。單波長光學監控的缺點在於無法掌控較廣光譜形狀。廣波域光學監控的缺點在於穩定掌控折射率及吸收係數。The effect of optical thin film coating depends on the accuracy of controlling the optical properties (such as refractive index, absorption coefficient, etc.) and film thickness of each layer of film in the coating. Currently, the monitoring methods generally used are: time monitoring, quartz oscillator monitoring , Single-wavelength optical monitoring and wide-wave domain optical monitoring. The disadvantage of time monitoring is that it cannot monitor the coating rate, refractive index, absorption coefficient and does not have the effect of compensating for the error of the front layer. The disadvantage of quartz oscillator monitoring is that it cannot monitor the refractive index, absorption coefficient and does not have the effect of compensating for the error of the front layer. The disadvantage of single-wavelength optical monitoring is the inability to handle the wider spectral shape. The disadvantage of wide-wave domain optical monitoring is the stable control of refractive index and absorption coefficient.
本揭露之目的在於提出一種製鍍光學薄膜之監控系統包括:鍍膜機、單波長即時光強監控模組與廣波域即時光譜監控模組。鍍膜機用以製鍍光學薄膜。單波長即時光強監控模組用以於鍍膜機製鍍光學薄膜的過程中即時算出光學薄膜於一波長所對應的折射率與消光係數,進而根據光學薄膜於所述波長所對應的折射率與消光係數來推算出光學薄膜於各波長所分別對應的折射率與消光係數。廣波域即時光譜監控模組用以根據光學薄膜於各波長所分別對應的折射率與消光係數來計算出光學薄膜的當前厚度,並根據當前厚度來判斷光學薄膜是否到達停鍍點。The purpose of the present disclosure is to provide a monitoring system for producing optical films, including a coating machine, a single-wavelength real-time light intensity monitoring module, and a wide-wave domain real-time spectrum monitoring module. Coating machines are used to coat optical films. The single-wavelength real-time light intensity monitoring module is used to calculate the refractive index and extinction coefficient of the optical film corresponding to a wavelength in real time during the process of coating the optical film by the coating mechanism, and then according to the refractive index and extinction of the optical film corresponding to the wavelength. The refractive index and extinction coefficient of the optical film corresponding to each wavelength are calculated by using the coefficients. The wide-wave domain real-time spectrum monitoring module is used to calculate the current thickness of the optical film according to the refractive index and extinction coefficient corresponding to each wavelength of the optical film, and judge whether the optical film has reached the stop point according to the current thickness.
在一些實施例中,上述單波長即時光強監控模組包含具有所述波長的單波長光源模組與光感測器,光感測器用以量測出單波長光源模組所發出的光束通過光學薄膜時的穿透光強度,單波長即時光強監控模組用以根據穿透光強度來算出穿透率與反射率之至少一者,從而據以算出光學薄膜於所述波長所對應的折射率與消光係數。In some embodiments, the single-wavelength real-time light intensity monitoring module includes a single-wavelength light source module with the wavelength and a light sensor, and the light sensor is used to measure the passage of the light beam emitted by the single-wavelength light source module The transmitted light intensity of the optical film, the single-wavelength real-time light intensity monitoring module is used to calculate at least one of the transmittance and the reflectance according to the transmitted light intensity, so as to calculate the optical film corresponding to the wavelength. Refractive index and extinction coefficient.
在一些實施例中,係透過等比例或等距的方式以根據光學薄膜於所述波長所對應的折射率與消光係數來推算出光學薄膜於各波長所分別對應的折射率與消光係數。In some embodiments, the refractive index and the extinction coefficient of the optical film corresponding to each wavelength are calculated according to the refractive index and the extinction coefficient of the optical film corresponding to the wavelength through a proportional or equidistant manner.
在一些實施例中,當鍍膜機用以製鍍多層膜堆時,上述廣波域即時光譜監控模組更用以根據對應於光學薄膜的當下膜層的當前厚度來判斷是否須修正設計厚度。In some embodiments, when the coating machine is used to coat the multilayer film stack, the wide-wave domain real-time spectrum monitoring module is further used to determine whether to modify the design thickness according to the current thickness of the current layer corresponding to the optical film.
在一些實施例中,當判斷須修正設計厚度時,廣波域即時光譜監控模組更用以根據對應於光學薄膜的當下膜層於各波長所對應的折射率與消光係數以及對應於光學薄膜的當下膜層的當前厚度來進行設計厚度之修正。In some embodiments, when it is determined that the design thickness needs to be corrected, the wide-wave domain real-time spectrum monitoring module is further configured to calculate the refractive index and extinction coefficient corresponding to each wavelength of the current layer corresponding to the optical film and the corresponding optical film The current thickness of the current film layer is used to modify the design thickness.
本揭露之目的在於另提出一種製鍍光學薄膜之監控方法,包括:藉由單波長即時光強監控模組於鍍膜機製鍍光學薄膜的過程中即時算出光學薄膜於一波長所對應的折射率與消光係數,進而根據光學薄膜於所述波長所對應的折射率與消光係數來推算出光學薄膜於各波長所分別對應的折射率與消光係數;藉由廣波域即時光譜監控模組根據光學薄膜於各波長所分別對應的折射率與消光係數來計算出光學薄膜的當前厚度;及根據光學薄膜的當前厚度來判斷光學薄膜是否到達停鍍點。The purpose of the present disclosure is to further provide a monitoring method for producing a coating optical film, which includes: using a single-wavelength real-time light intensity monitoring module to instantly calculate the refractive index of the optical film corresponding to a wavelength and the Extinction coefficient, and then calculate the refractive index and extinction coefficient corresponding to each wavelength of the optical film according to the refractive index and extinction coefficient of the optical film at the wavelength; The current thickness of the optical film is calculated from the refractive index and extinction coefficient corresponding to each wavelength respectively; and whether the optical film has reached the stop point is determined according to the current thickness of the optical film.
在一些實施例中,上述單波長即時光強監控模組包含具有所述波長的單波長光源模組與光感測器,其中藉由單波長即時光強監控模組算出光學薄膜於所述波長所對應的折射率與消光係數的方法包括:藉由光感測器量測出單波長光源模組所發出的光束通過光學薄膜時的穿透光強度;根據穿透光強度來算出穿透率與反射率之至少一者;及根據穿透率與反射率之至少該者來算出光學薄膜於所述波長所對應的折射率與消光係數。In some embodiments, the single-wavelength real-time light intensity monitoring module includes a single-wavelength light source module with the wavelength and a light sensor, wherein the single-wavelength real-time light intensity monitoring module calculates the wavelength of the optical film at the wavelength The method for the corresponding refractive index and extinction coefficient includes: measuring the penetrating light intensity when the light beam emitted by the single-wavelength light source module passes through the optical film by a light sensor; calculating the penetrating rate according to the penetrating light intensity at least one of reflectance and transmittance; and calculating the refractive index and extinction coefficient of the optical film corresponding to the wavelength according to at least one of transmittance and reflectance.
在一些實施例中,係透過等比例或等距的方式以根據光學薄膜於所述波長所對應的折射率與消光係數來推算出光學薄膜於各波長所分別對應的折射率與消光係數。In some embodiments, the refractive index and the extinction coefficient of the optical film corresponding to each wavelength are calculated according to the refractive index and the extinction coefficient of the optical film corresponding to the wavelength through a proportional or equidistant manner.
在一些實施例中,所述製鍍光學薄膜之監控方法更包含:當鍍膜機用以製鍍多層膜堆時,根據對應於光學薄膜的當下膜層的當前厚度來判斷是否須修正設計厚度。In some embodiments, the monitoring method for coating optical films further includes: when the coating machine is used to coat the multilayer film stack, judging whether to modify the design thickness according to the current thickness of the current layer corresponding to the optical film.
在一些實施例中,所述製鍍光學薄膜之監控方法更包含:當判斷須修正設計厚度時,根據對應於光學薄膜的當下膜層於各波長所對應的折射率與消光係數以及對應於光學薄膜的當下膜層的當前厚度來進行設計厚度之修正。In some embodiments, the monitoring method for producing an optical film further comprises: when determining that the design thickness needs to be corrected, according to the refractive index and extinction coefficient corresponding to each wavelength of the current layer corresponding to the optical film and corresponding to the optical film The current thickness of the current film layer of the film is used to modify the design thickness.
為讓本揭露的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present disclosure more obvious and easy to understand, the following embodiments are given and described in detail in conjunction with the accompanying drawings as follows.
以下仔細討論本發明的實施例。然而,可以理解的是,實施例提供許多可應用的概念,其可實施於各式各樣的特定內容中。所討論、揭示之實施例僅供說明,並非用以限定本發明之範圍。Embodiments of the present invention are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable concepts that can be embodied in a wide variety of specific contexts. The discussed and disclosed embodiments are for illustration only, and are not intended to limit the scope of the present invention.
圖1係根據本揭露的實施例之製鍍光學薄膜之監控系統100的示意圖。製鍍光學薄膜之監控系統100包括:鍍膜機110、單波長(monochromatic)即時光強監控模組120與廣波域(broadband wavelength)即時光譜監控模組130。鍍膜機110用以製鍍光學薄膜112。單波長即時光強監控模組120與廣波域即時光譜監控模組130用以於鍍膜機110製鍍光學薄膜112的過程中,即時地監控光學薄膜112的光學特性,從而掌控光學薄膜112成長時的薄膜厚度之變化。FIG. 1 is a schematic diagram of a
單波長即時光強監控模組120包含單波長光源模組122與光感測器124,單波長光源模組122用以發出具有單一波長(例如1000奈米(nm))的光束,光感測器124用以量測具有單一波長的光束通過光學薄膜112時的穿透光強度。在本揭露的實施例中,單波長即時光強監控模組120用以於鍍膜機110製鍍光學薄膜112的過程中,每時每刻地(例如每秒)根據光感測器124量測到的穿透光強度來推算出光學薄膜112當前的穿透率和/或反射率。The single-wavelength real-time light
在本揭露的實施例中,光感測器124可例如為光電二極體(Photodiode,PD)或光學倍增管(Photomultiplier,PMT)。在本揭露的實施例中,光感測器124也可例如為即時光譜儀,即時光譜儀用以量測具有單一波長的光束通過光學薄膜112時的穿透光譜,單波長即時光強監控模組120用以根據即時光譜儀量測到的穿透光譜來推算出光學薄膜112當前的穿透率和/或反射率。In the embodiment of the present disclosure, the
在本揭露的實施例中,單波長即時光強監控模組120還可包含其他光學元件用以調製具有單一波長的光束的光形,所述其他光學元件可例如為光準直元件、分光鏡、偏極片和/或成像透鏡等等,這些光學元件的組成及排列方式可依照實際施作情形而加以變化,本揭露並不限制這些光學元件的組成及排列方式。In the embodiment of the present disclosure, the single-wavelength real-time light
在本揭露的實施例中,單波長即時光強監控模組120還用以根據光學薄膜112當前的穿透率和/或反射率來推算出光學薄膜112於所述單一波長所對應的折射率與消光係數。值得一提的是,所推算出之光學薄膜112於所述單一波長所對應的折射率與消光係數乃是經由即時計算所得出之每時每刻即時更新的解析解,而非使用電腦進行數值擬合所猜解的擬合解。因此,所推算出之光學薄膜112於所述單一波長所對應的折射率與消光係數能夠更精確地反應出光學薄膜112當前的光學特性。In the embodiment of the present disclosure, the single-wavelength real-time light
在本揭露的實施例中,單波長即時光強監控模組120還用以根據光學薄膜112於單一波長所對應的折射率與消光係數來推算出光學薄膜112於各波長所分別對應的折射率與消光係數。在本揭露的實施例中,係透過等比例或等距的方式以根據光學薄膜112於單一波長所對應的折射率與消光係數來推算出光學薄膜112於各波長所分別對應的折射率與消光係數。值得一提的是,所推算出之光學薄膜112於各波長所對應的折射率與消光係數乃是經由即時計算所得出之每時每刻即時更新的解析解,而非使用電腦進行數值擬合所猜解的擬合解。因此,所推算出之光學薄膜112於各波長所對應的折射率與消光係數能夠更精確地反應出光學薄膜112當前的光學特性。In the embodiment of the present disclosure, the single-wavelength real-time light
廣波域即時光譜監控模組130包含廣波域(例如400nm到1500nm)光源模組132與光感測器134,廣波域即時光譜監控模組130的光感測器134可例如為高靈敏的電荷耦合元件(Charge Coupled Device,CCD),換言之,廣波域即時光譜監控模組130的光感測器134可為相機或攝影機之CCD,但本揭露不以此為限,在本揭露的實施例中,廣波域即時光譜監控模組130的光感測器134也可例如為即時光譜儀。The wide-wave domain real-time
在本揭露的實施例中,單波長即時光強監控模組120亦可整合於廣波域即時光譜監控模組130中。In the embodiment of the present disclosure, the single-wavelength real-time light
廣波域即時光譜監控模組130用以根據光學薄膜112於各波長所分別對應的折射率與消光係數來推算出光學薄膜112的當前厚度,其算式如下式(4)所示。
其中,δ為當下膜層之當前厚度,n為各波長所分別對應的折射率,α為當下膜層之前一層的導納值的實部,β為當下膜層之前一層的導納值的虛部。值得一提的是,所推算出之光學薄膜112的當前厚度乃是經由即時計算所得出之每時每刻即時更新的解析解,而非使用電腦進行數值擬合所猜解的擬合解。因此,所推算出之光學薄膜112的當前厚度為更精確的解析解而非可能因誤差累積而有所誤差之擬合解。
The wide-wave domain real-time
在本揭露的實施例中,製鍍光學薄膜之監控系統100已預先知道光學薄膜112的設計厚度(例如為系統預設值或者是經由操作者輸入的設定數值),因此,當廣波域即時光譜監控模組130所推算之光學薄膜112的當前厚度相等於設計厚度時,即代表已到達停鍍點。換言之,廣波域即時光譜監控模組130還根據光學薄膜112的當前厚度來判斷光學薄膜112是否到達停鍍點。當光學薄膜112到達停鍍點時,通知鍍膜機110停止鍍膜。In the embodiment of the present disclosure, the
圖2係根據本揭露的實施例之製鍍光學薄膜之監控方法1000的流程圖。製鍍光學薄膜之監控方法1000包含步驟1100至步驟1800。製鍍光學薄膜之監控方法1000尤指的是當鍍膜機110用以製鍍多層膜堆時的施作流程。請一併參閱圖1與圖2,於步驟1100,鍍膜機110開始製鍍當下膜層。於步驟1200,單波長即時光強監控模組120用以於鍍膜機110製鍍當下膜層的過程中,每時每刻地根據量測到之當下膜層的穿透率和/或反射率來推算出當下膜層於所述單一波長所對應的折射率與消光係數。於步驟1300,於鍍膜機110製鍍當下膜層的過程中,每時每刻地根據當下膜層於所述單一波長所對應的折射率與消光係數來推算出當下膜層於各波長所對應的折射率與消光係數。於步驟1400,廣波域即時光譜監控模組130用以於鍍膜機110製鍍當下膜層的過程中,每時每刻地根據當下膜層於各波長所對應的折射率與消光係數來推算出當下膜層的當前厚度。FIG. 2 is a flowchart of a
於步驟1500,根據當下膜層於各波長所對應的折射率與消光係數以及當下膜層的當前厚度來判斷是否需修正設計厚度,若判斷不需修正設計厚度,則進入步驟1700。若判斷需修正設計厚度,則進入步驟1600,進行設計厚度之修正,且接著進入步驟1700。值得一提的是,設計厚度之修正乃是根據當下膜層於各波長所對應的折射率與消光係數以及當下膜層的當前厚度來進行修正,並且,當下膜層於各波長所對應的折射率與消光係數以及當下膜層的當前厚度乃是經由即時計算所得出之每時每刻即時更新的解析解,而非使用電腦進行數值擬合所猜解的擬合解,因此,本揭露的設計厚度之修正的效果更佳。在本揭露的實施例中,藉由修正設計厚度來實現錯誤補償效應,換言之,本揭露更具有對前層錯誤補償之功效。In
於步驟1700,判斷當前厚度是否相等於設計厚度,若是,即代表已到達停鍍點,進入步驟1800,通知鍍膜機110停止當層鍍膜,並開始下一層鍍膜;若否,即代表尚未到達停鍍點,回到步驟1200。In
綜合上述,本揭露提出一種製鍍光學薄膜之監控系統及其方法,透過結合單波長即時光強監控模組與廣波域即時光譜監控模組從而能夠即時地監控光學薄膜的光學特性並掌控光學薄膜成長時的薄膜厚度之變化,並可據以進行對前層錯誤補償,以使良率有效地大幅提升。In view of the above, the present disclosure proposes a monitoring system and method for producing optical films. By combining a single-wavelength real-time light intensity monitoring module and a wide-wave domain real-time spectrum monitoring module, the optical properties of the optical film can be monitored and controlled in real time. The change of the film thickness during film growth can be used to compensate the front layer error accordingly, so that the yield can be effectively and greatly improved.
以上概述了數個實施例的特徵,因此熟習此技藝者可以更了解本揭露的態樣。熟習此技藝者應了解到,其可輕易地把本揭露當作基礎來設計或修改其他的製程與結構,藉此實現和在此所介紹的這些實施例相同的目標及/或達到相同的優點。熟習此技藝者也應可明白,這些等效的建構並未脫離本揭露的精神與範圍,並且他們可以在不脫離本揭露精神與範圍的前提下做各種的改變、替換與變動。The foregoing has outlined features of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures, thereby achieving the same objectives and/or achieving the same advantages as the embodiments described herein . Those skilled in the art should also understand that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and they can make various changes, substitutions and alterations without departing from the spirit and scope of the present disclosure.
100 : 製鍍光學薄膜之監控系統 110 : 鍍膜機 112 : 光學薄膜 120 : 單波長即時光強監控模組 122 : 單波長光源模組 124 : 光感測器 130 : 廣波域即時光譜監控模組 132 : 廣波域光源模組 134 : 光感測器 1000 : 製鍍光學薄膜之監控方法 1100-1800 : 步驟 100 : Monitoring system for coating optical film 110 : Coating Machine 112 : Optical Film 120 : Single-wavelength real-time light intensity monitoring module 122 : single wavelength light source module 124 : light sensor 130 : Wide-wave domain real-time spectral monitoring module 132 : Wide-wave domain light source module 134 : light sensor 1000 : Monitoring method for producing optical film 1100-1800 : Steps
從以下結合所附圖式所做的詳細描述,可對本揭露之態樣有更佳的了解。需注意的是,根據業界的標準實務,各特徵並未依比例繪示。事實上,為了使討論更為清楚,各特徵的尺寸都可任意地增加或減少。 [圖1]係根據本揭露的實施例之製鍍光學薄膜之監控系統的示意圖。 [圖2]係根據本揭露的實施例之製鍍光學薄膜之監控方法的流程圖。 A better understanding of aspects of the present disclosure can be obtained from the following detailed description taken in conjunction with the accompanying drawings. It should be noted that, according to standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased in order to clarify the discussion. 1 is a schematic diagram of a monitoring system for producing optical films according to an embodiment of the present disclosure. FIG. 2 is a flowchart of a monitoring method for forming an optical film according to an embodiment of the present disclosure.
1000 : 製鍍光學薄膜之監控方法 1100-1800 : 步驟 1000 : Monitoring method for producing optical film 1100-1800 : Steps
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| TW200624768A (en) * | 2005-01-12 | 2006-07-16 | Univ Nat Central | An optical monitor method of thin-film deposition by using the admittance track chart |
| TW201502461A (en) * | 2013-05-16 | 2015-01-16 | Kla Tencor Corp | Metrology system calibration refinement |
| TW201937128A (en) * | 2018-01-06 | 2019-09-16 | 美商克萊譚克公司 | Variable resolution spectrometer |
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| TW200624768A (en) * | 2005-01-12 | 2006-07-16 | Univ Nat Central | An optical monitor method of thin-film deposition by using the admittance track chart |
| TW201502461A (en) * | 2013-05-16 | 2015-01-16 | Kla Tencor Corp | Metrology system calibration refinement |
| TW201937128A (en) * | 2018-01-06 | 2019-09-16 | 美商克萊譚克公司 | Variable resolution spectrometer |
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