以下，參考圖面，針對其中一個實施形態作說明。
(基本構成)
如同圖1中所示一般，第1實施形態之基板處理裝置10，係具備有處理室20、和台30、和基板加熱部40、和台旋轉機構50、和樹脂供給部60、和樹脂洗淨部70、和樹脂成形部80、以及控制部90。
處理室20，係為用以對於具備有被處理面Wa之基板W進行處理的處理盒。此處理室20，例如，係被形成為箱形狀，並收容台30、台旋轉機構50之一部分、樹脂供給部60、樹脂洗淨部70、樹脂成形部80等。作為基板W，例如，係使用有晶圓或液晶基板。
在前述之處理室20之上面處，係被設置有清淨單元21。此清淨單元21，例如，係具備有HEPA濾網等之濾網和風扇(均未圖示)，並將從基板處理裝置10所被作設置的清淨室的頂面所下吹的下吹流淨化而導入至處理室20內，以在處理室20內產生從上方而流動至下方的氣流。清淨單元21，係被與控制部90作電性連接，其之驅動係被控制部90所控制。
台30，係被定位在處理室20內之中央附近處，並被水平地設置在台旋轉機構50上，而成為能夠在水平面內旋轉。此台30，例如，係被稱作轉台(旋轉台)，基板W之被處理面Wa之中心，係被定位於台30之旋轉軸上。台30，係將被載置於其之上面處的基板W作吸附並作保持(吸附保持)。
基板加熱部40，係被形成為環狀(例如，圓環狀)，並被設置於台30之上面(基板W所被作載置之面)側處。此基板加熱部40，係與被台30所作了支持的基板W(台30上之基板W)之下面之外周端部A1作接觸，並加熱台30上之基板W。作為基板加熱部40，例如，係使用有熱板或鞘套加熱器、燈管加熱器、陶瓷加熱器、石英管加熱器等。基板加熱部40，係被與控制部90作電性連接，其之驅動係被控制部90所控制。
台旋轉機構50，係支持台30，並構成為使該台30在水平面內作旋轉。例如，台旋轉機構50，係具備有被與台30之中央作了連結的旋轉軸、和使該旋轉軸旋轉的馬達(均未圖示)。此台旋轉機構50，係藉由馬達之驅動而經由旋轉軸來使台30旋轉。台旋轉機構50，係被與控制部90作電性連接，其之驅動係被控制部90所控制。
樹脂供給部60，係具備有供給頭61、和頭移動機構62。此樹脂供給部60，係藉由頭移動機構62來使供給頭61移動，並從台30上之基板W之外周端部A1之上方，來使供給頭61所保持的身為硬化狀態之熱可塑性樹脂之樹脂材B1與台30上之基板W之外周端部A1作接觸。
供給頭61，係如同圖2中所示一般，身為以前端部來將樹脂材B1作保持之治具。此供給頭61，係被形成為能夠藉由頭移動機構62來在台30之上方或周圍而朝水平方向、鉛直方向以及傾斜方向移動、亦即是被形成為能夠以3維來自由地移動。此供給頭61，係藉由頭移動機構62來移動並與台30上之基板W之外周端部A1相對向，並且將所保持的樹脂材B1推壓附著於台30上之基板W之外周端部A1處而使其作接觸。
樹脂材B1，係身為硬化狀態(固體狀)之熱可塑性樹脂，例如，係身為使熱可塑性樹脂被形成為圓柱狀(棒狀)並作了硬化者。樹脂材B1之直徑，例如係為10mm。此樹脂材B1，係被形成為能夠對於供給頭61作裝卸，而成為能夠進行其之交換。作為熱可塑性樹脂，例如，係使用有PVA(聚乙烯醇)、EVA(乙烯醋酸乙烯酯共聚物)、胺基甲酸乙酯系樹脂。此熱可塑性樹脂，係相對於在蝕刻工程中所使用之蝕刻液而具備有難溶性、亦即是具備有耐性，而作為保護基板W免於受到蝕刻液之影響的保護材而起作用。熱可塑性樹脂，例如，若是其之溫度成為150℃以上則會軟化，若是成為較150℃更低則會硬化。
頭移動機構62，係具備有可動臂62a、和臂移動機構62b、以及複數之旋轉機構62c、62d、62e。此頭移動機構62，係藉由臂移動機構62b和旋轉機構62d等而使可動臂62a移動，並使供給頭61移動至所期望之位置處。
可動臂62a，係被形成為可藉由旋轉機構62c而在中途作彎折。旋轉機構62c，係具備有於水平方向上延伸之旋轉軸和馬達(均未圖示)，並作為關節而起作用。可動臂62a之其中一端，係經由旋轉機構62d而被設置於臂移動機構62b處，可動臂62a係被形成為能夠以其中一端作為旋轉中心並作旋轉。旋轉機構62d，係具備有於水平方向上延伸之旋轉軸和馬達(均未圖示)，並作為關節而起作用。又，可動臂62a之另外一端，係經由旋轉機構62e而將供給頭61作保持。旋轉機構62e，係具備有於鉛直方向上延伸之旋轉軸和馬達(均未圖示)，並作為使供給頭61作旋轉的旋轉驅動部而起作用。各旋轉機構62c、62d以及62e，係分別被與控制部90作電性連接，該些之驅動係被控制部90所控制。
臂移動機構62b，係將可動臂62a以及旋轉機構62d等作支持，並使可動臂62a於水平方向上搖動。例如，臂移動機構62b，係具備有將可動臂62a以及旋轉機構62d作支持之支柱和使該支柱旋轉之馬達等(均未圖示)。此臂移動機構62b，係藉由馬達之驅動而使支柱旋轉並使可動臂62a在水平方向上移動。臂移動機構62b，係被與控制部90作電性連接，其之驅動係被控制部90所控制。
於此，如同圖3以及圖4中所示一般，基板W之外周端部A1，係藉由基板W之上面(被處理面Wa)之外周區域A1a、和基板W之外周面(基板W之外周之端面)A1b、以及基板W之下面之外周區域A1c，而構成之。又，如同圖3～圖5中所示一般，在基板W之上面處，係存在有在蝕刻處理工程中而成為蝕刻處理之對象的蝕刻對象區域R1。蝕刻對象區域R1，係身為將基板W之上面之外周區域A1a去除後的基板W之上面之區域。此蝕刻對象區域R1以外之區域，係身為在蝕刻處理工程中而並非為蝕刻處理之對象的非蝕刻對象區域。蝕刻對象區域R1係為圓狀之區域(參照圖5)，基板W之上面之外周區域A1a、基板W之下面之外周區域A1c，係分別身為從基板W之外周起朝向內側(基板W之中心側)而具備有數mm(例如4mm以下)的特定寬幅之圓環狀之區域。
例如，前述之供給頭61，在熱可塑性樹脂B1a之塗布工程中，係藉由頭移動機構62來移動至台30上之基板W處的外周區域A1a之正上方之位置處，並從該正上方之位置起而下降，並且如同圖3中所示一般，使樹脂材B1與台30上之基板W之外周區域A1a作接觸。台30上之基板W係藉由基板加熱部40而被加熱，基板W之外周端部A1之溫度，例如係成為150℃以上。因此，與台30上之基板W之外周區域A1a作了接觸的樹脂材B1之前端部分(圖3中之下端部分)係軟化。軟化了的樹脂材B1之前端部分之熱可塑性樹脂，係以覆蓋基板W之外周區域A1a以及外周面A1b的方式而浸濕並擴廣，並因應於台30之旋轉，來沿著台30上之基板W之外周區域A1a以及外周面A1b而依序附著(參照圖4以及圖5)。
藉由此，如同圖4以及圖5中所示一般，在基板W之外周區域A1a以及外周面A1b之全體處，係被塗布有軟化狀態之熱可塑性樹脂B1a，該基板W之外周區域A1a以及外周面A1b係被軟化狀態之熱可塑性樹脂B1a所覆蓋。之後，若是由基板加熱部40所致之加熱被停止，而基板W之外周端部A1之溫度例如成為較150℃而更低，則基板W上之軟化狀態之熱可塑性樹脂B1a係硬化。硬化狀態，係亦可為凝膠狀。完成樹脂塗布之基板W，係藉由具備有機器手等之搬送裝置(未圖示)而被從處理室20搬出，並被搬入至身為與基板處理裝置10相異之個體的蝕刻處理裝置(未圖示)中，並且藉由蝕刻液而被作處理。
在此塗布工程中，從樹脂材B1而軟化了的熱可塑性樹脂B1a係被供給至台30上之基板W之外周區域A1a以及外周面A1b處，在基板W之一周之量的外周區域A1a以及外周面A1b處係被塗布有軟化狀態之熱可塑性樹脂B1a。此時，樹脂材B1係逐漸地減少，樹脂材B1之前端面(圖3以及圖4中之下面)與供給頭61之前端面(圖3以及圖4之下面)之間之垂直分離距離係逐漸變短，但是，就算是塗布結束，供給頭61之前端面也不會從樹脂材B1之前端面而露出(參照圖3以及圖4)。亦即是，樹脂材B1，係如同圖4中所示一般，以就算是在塗布結束後供給頭61之前端面也不會從樹脂材B1之前端面露出的方式，而被形成。
又，供給頭61，係經由身為推壓構件之其中一例的彈簧(未圖示)而被支持於旋轉機構62e處，在使樹脂材B1與基板W之外周區域A1a作接觸時，樹脂材B1係藉由此彈簧而被推壓附著於基板W上。而，係以會使此推壓附著狀態就算是樹脂材B1逐漸地減少也會被維持的方式，來設定供給頭61之下降停止位置。亦即是，當正在對於基板W而塗布樹脂材B1時，供給頭61係相對於基板W之塗布面而並不會在垂直方向上移動。另外，此下降停止位置，係可考慮到所使用的樹脂材B1之種類、台30之旋轉速度、在基板W上所需要的熱可塑性樹脂B1a之膜厚、彈簧長度等，而預先藉由實驗等來求取之。
若是前述之蝕刻處理結束，則完成處理之基板W，係藉由搬送裝置(未圖示)而再度被搬入至處理室20內，並被保持於台30上，之後，供給頭61係從台30上之基板W之外周區域A1a以及外周面A1b而將硬化狀態之熱可塑性樹脂B1a剝離。在此剝離工程中，供給頭61，係藉由頭移動機構62來移動至台30上之基板W處的外周區域A1a之正上方之位置處，並從該正上方之位置起而下降，並且如同圖6中所示一般，使所保持的樹脂材B1之前端部分與被塗布在台30上之基板W處的軟化狀態之熱可塑性樹脂B1a之一部分作接觸並使其附著。另外，台30上之基板W之外周端部A1之溫度，係藉由以基板加熱部40所致之加熱，而例如被設為150℃以上。因此，基板W上之熱可塑性樹脂B1a係軟化。在使樹脂材B1之前端部分附著於軟化狀態之熱可塑性樹脂B1a之一部分處的狀態下，若是由基板加熱部40所致之加熱被停止，而基板W之外周端部A1之溫度例如成為較150℃而更低，則在基板W上而軟化了的熱可塑性樹脂B1a係硬化。藉由此，供給頭61所保持的樹脂材B1之前端部分係固定接著於基板W上之熱可塑性樹脂B1a之一部分處。
接著，供給頭61，係在使樹脂材B1之前端部分固定接著於基板W上之熱可塑性樹脂B1a之一部分處的狀態下，如同圖7中所示一般地，藉由頭移動機構62來從接觸位置起而上升至其之正上方的剝離開始位置處，並從台30上之基板W之外周區域A1a而將硬化狀態之熱可塑性樹脂B1a剝下，並進而如同圖8中所示一般，藉由頭移動機構62來沿著台30上之基板W之被處理面Wa而從剝離開始位置來移動至剝離結束位置(相對於剝離開始位置而以台30之旋轉軸作為中心而成為點對稱的位置)處。在此從剝離開始位置起而至剝離結束位置之移動時，供給頭61，係一面藉由旋轉機構62e來進行旋轉，一面將從台30上之基板W之外周區域A1a所剝下了的硬化狀態之熱可塑性樹脂B1a卷取於樹脂材B1之周圍並作回收。另外，在圖8中，供給頭61之旋轉軸雖係朝向鉛直方向，但是，係亦可將此供給頭61之旋轉軸，從圖7中所示之狀態起來使旋轉機構62c動作並例如朝向台30之旋轉中心方向而作30度之傾斜，並構成為在此狀態下而使供給頭61進行旋轉。於此情況，係成為易於將從基板W而剝下了的熱可塑性樹脂B1a卷取於樹脂材B1之周圍。
於此，熱可塑性樹脂B1a，由於相較於熱硬化性樹脂等之材料，其之相對於基板W之密著度係為低，因此，係能夠並不使基板W破損地而將密著於基板W上並硬化了的熱可塑性樹脂B1a機械性地剝離。另一方面，若是想要將密著於基板W上並硬化了的熱硬化性樹脂機械性地剝離，則基板W係會破損。另外，熱硬化性樹脂，若是一度硬化，則便無法藉由熱來使熱硬化性樹脂軟化，為了將熱硬化性樹脂去除，係需要藉由藥液等來將熱硬化性樹脂溶解。
回到圖1，樹脂洗淨部70，係以不會對於台30之旋轉動作造成妨礙的方式，而被設置在台30之周圍。此樹脂洗淨部70，係如同圖1以及圖9中所示一般，具備有噴嘴71、和支持構件72、以及洗淨槽73。樹脂洗淨部70，係朝向供給頭61所保持的樹脂材B1而從噴嘴71來吐出洗淨液，並將樹脂材B1及其周圍之熱可塑性樹脂B1a(被卷取於樹脂材B1之周圍的硬化狀態之熱可塑性樹脂B1a)洗淨。噴嘴71，係為吐出洗淨液(例如純水)者，並以朝向洗淨槽73內而吐出洗淨液的方式，來藉由支持構件72而被作支持。支持構件72，係被設置於洗淨槽73處，並以能夠使噴嘴71朝向洗淨槽73內而吐出洗淨液的方式，來支持噴嘴71。洗淨槽73，係承受從噴嘴71所吐出的洗淨液和從樹脂材B1或其周圍之熱可塑性樹脂B1a所落下的洗淨液並作儲存。
在洗淨工程中，供給頭61，係藉由頭移動機構62來移動至洗淨槽73之正上方之位置處，並從該正上方之位置起，而如同圖9中所示一般地，使樹脂材B1下降至位置於洗淨槽73內之洗淨位置處。在樹脂材B1之下降時或者是下降停止時，旋轉機構62e係使保持樹脂材B1之供給頭61作旋轉。噴嘴71，係吐出洗淨液，並噴灑至進行旋轉之樹脂材B1及其周圍之熱可塑性樹脂B1a上，而將樹脂材B1及其周圍之熱可塑性樹脂B1a洗淨。藉由此，樹脂材B1及其周圍之熱可塑性樹脂B1a係成為清淨。另外，從噴嘴71所吐出的洗淨液和從樹脂材B1或其周圍之熱可塑性樹脂B1a所落下的洗淨液等，係藉由洗淨槽73而被承接並作儲存。又，在樹脂材B1之洗淨時，雖係使供給頭61作了旋轉，但是，若是在被定位於洗淨位置處之樹脂材B1之周圍處配置複數之噴嘴，並構成為從各噴嘴而吐出洗淨液，則在洗淨中係亦可並不使供給頭61旋轉。又，洗淨後之樹脂材B1，係藉由氣體吹附部(未圖示)而被吹附有乾燥空氣或氮氣，並被乾燥。
回到圖1，樹脂成形部80，係以不會對於台30之旋轉動作造成妨礙的方式，而被設置在台30之周圍。此樹脂成形部80，係如同圖1以及圖10～圖12中所示一般，具備有凹部81、和發熱體82。樹脂成形部80，係藉由發熱體82而使凹部81之周邊溫度例如成為150℃以上，並藉由凹部81來接受被保持於供給頭61處的樹脂材B1及其周圍之熱可塑性樹脂B1a，並且使樹脂材B1及其周圍之熱可塑性樹脂B1a軟化，來作為一體而成形為原本之形狀。凹部81，係被設置在樹脂成形部80之上面處，並被形成為使樹脂材B1回復至身為原本之形狀的圓柱形狀之模。發熱體82，係作為加熱樹脂成形部80之加熱部而起作用。作為發熱體82，例如係使用鎳鉻線等之電熱線。發熱體82，係被與控制部90作電性連接，其之驅動係被控制部90所控制。
在成形工程中，供給頭61，係藉由頭移動機構62來移動至樹脂成形部80之正上方之位置處，並從該正上方之位置起，而如同圖10中所示一般地，使熱可塑性樹脂B1a以使被卷繞於周圍之樹脂材B1會位置在凹部81內的方式而一直下降至成形位置處。此時，凹部81之周邊溫度係藉由發熱體82之加熱而例如被設為150℃以上。因此，凹部81內之樹脂材B1及其周圍之熱可塑性樹脂B1a係軟化並成為一體，而如同圖11中所示一般地被恢復為原本之形狀。之後，若是由發熱體82所致之加熱被停止，而凹部81之周邊溫度例如成為較150℃而更低，則軟化狀態之熱可塑性樹脂(B1、B1a)係硬化。在熱可塑性樹脂(B1、B1a)之硬化後，如同圖12中所示一般，供給頭61係藉由頭移動機構62來從成形位置而一直上升至其之正上方之位置處，並從該正上方之位置而避開。另外，若是將凹部81之內面預先進行鏡面加工或者是氟樹脂加工，則在使硬化後之熱可塑性樹脂(B1、B1a)從凹部81而離模的觀點來看係為理想。作為氟樹脂，例如，係使用聚四氟乙烯。
控制部90，係具備有對於各部作集中性控制之微電腦、和將關連於基板處理之基板處理資訊和各種程式等作記憶之記憶部(均未圖示)。此控制部90，係基於基板處理資訊和各種程式，而進行對於由台旋轉機構50所致之台30之旋轉動作、由樹脂供給部60所致之熱可塑性樹脂B1a之供給動作、由樹脂供給部60所致之熱可塑性樹脂B1a之剝離動作、由樹脂洗淨部70所致之熱可塑性樹脂B1a之洗淨動作、由樹脂成形部80所致之熱可塑性樹脂(B1、B1a)之成形動作等的控制(亦包含關連於控制之各種處理)。例如，在加熱控制中，控制部90，係以會使台30上之基板W之溫度成為150℃以上的方式，來對於基板加熱部40作控制，又，係以會使樹脂成形部80之凹部81之周邊溫度成為150℃以上的方式，來對於發熱體82作控制。另外，基板W之厚度，例如係為0.6～0.8mm，基板加熱部40係能夠以數十秒程度之時間來將基板W之外周端部A1之溫度設為150℃以上。
(基板處理工程)
接著，針對前述之基板處理裝置10所進行之基板處理工程之流程作說明。在此基板處理工程中，控制部90係對於各部之動作進行控制。
如同圖13中所示一般，在步驟S1中，係藉由機器手而將未處理之基板W搬入至處理室20內並載置於台30上，該被作了載置的基板W係藉由台30而被作吸附保持。機器手，在基板W之載置後，係從處理室20而避開。另外，在基板W之搬入時，供給頭61係位置於待機位置(從台30之上方而避開並成為能夠進行基板W之搬入或搬出的位置)。
若是前述之機器手從處理室20而避開，則在步驟S2中，藉由樹脂供給部60，熱可塑性樹脂B1a係被塗布在台30上之基板W之外周區域A1a以及外周面A1b處。首先，基板加熱部40係開始基板W之加熱，基板W之外周端部A1之溫度，例如係成為150℃以上。又，台30係藉由台旋轉機構50而開始旋轉，台30之旋轉數係成為特定之旋轉數(例如，10rpm或此以下之值)，供給頭61係藉由頭移動機構62而從待機位置來移動至供給位置處。若是供給頭61到達供給位置處，則供給頭61所保持的樹脂材B1之前端部分係與台30上之基板W之外周區域A1a作接觸(參照圖3)。作了接觸的樹脂材B1之前端部分係被從基板W而來之熱所軟化，軟化了的前端部分之熱可塑性樹脂係以覆蓋基板W之外周區域A1a以及外周面A1b的方式而浸濕並擴廣，並因應於基板W之旋轉，來沿著環狀之外周區域A1a以及外周面A1b而依序附著。而，例如若是在基板W處之樹脂材B1之接觸開始點環繞了1周，則在基板W之外周區域A1a以及外周面A1b之全體處，熱可塑性樹脂B1a係被作塗布(參照圖4以及圖5)，台30上之基板W之外周區域A1a以及外周面A1b係被軟化狀態之熱可塑性樹脂B1a所覆蓋。若是此樹脂塗布結束，則基板加熱部40係停止加熱，台30係停止旋轉，供給頭61係從塗布位置而移動至待機位置處。若是由基板加熱部40所致之加熱被停止，而基板W之外周端部A1之溫度例如成為較150℃而更低，則軟化狀態之熱可塑性樹脂B1a係硬化。另外，由基板加熱部40所致之加熱的停止，係亦可構成為在樹脂材B1從基板W而離開之後再進行。
若是前述之供給頭61回到待機位置處，則在步驟S3中，完成樹脂塗布之基板W，係從台30上藉由前述之機器手(未圖示)而被搬出至處理室20外，並被搬入至蝕刻處理裝置(未圖示)中。之後，藉由蝕刻處理裝置，基板W之被處理面Wa係藉由蝕刻液而被作處理。在蝕刻工程中，蝕刻液係被供給至例如以50rpm而進行旋轉的基板W之被處理面Wa之中央附近處，被作了供給的蝕刻液，係藉由以基板W之旋轉所致之離心力而擴廣至基板W之被處理面Wa之全體。藉由此，在基板W之被處理面Wa上係被形成有蝕刻液之液膜，基板W之被處理面Wa係藉由蝕刻液而被作處理。此時，基板W之被處理面Wa上之熱可塑性樹脂B1a，係作為保護基板W之外周面A1b免於受到蝕刻液之影響的保護材而起作用。蝕刻處理後之基板W，係在蝕刻處理裝置內，依序被進行使用有洗淨液之洗淨處理、由使基板W進行高速旋轉一事所致的乾燥處理。
在步驟S4中，藉由前述之機器手，完成蝕刻處理之基板W係再度被搬入至處理室20內並載置於台30上，該被作了載置的基板W係藉由台30而被作吸附保持。機器手，在基板W之載置後，係從處理室20而避開。另外，在基板W之搬入時，供給頭61係位置於待機位置。
若是前述之機器手從處理室20而避開，則在步驟S5中，硬化狀態之熱可塑性樹脂B1a係被從台30上之基板W之外周區域A1a以及外周面A1b而去除。首先，基板加熱部40係開始基板W之加熱，基板W之外周端部A1之溫度例如係成為150℃以上，基板W上之熱可塑性樹脂B1a係軟化。又，供給頭61，係藉由頭移動機構62來移動至台30上之基板W的外周區域A1a之正上方之位置處，並從該正上方之位置起而下降至接觸位置處(參照圖6)。若是供給頭61到達接觸位置，則樹脂材B1之前端部分係與基板W上之軟化狀態之熱可塑性樹脂B1a之一部分相接觸並附著。在此狀態下，若是基板加熱部40停止加熱，而基板W之外周端部A1之溫度例如成為較150℃而更低，則在基板W上而軟化了的熱可塑性樹脂B1a係硬化，供給頭61所保持的樹脂材B1之前端部分係固定接著於基板W上之熱可塑性樹脂B1a之一部分處。接著，供給頭61，係在使樹脂材B1之前端部分固定接著於基板W上之熱可塑性樹脂B1a之一部分處的狀態下，藉由頭移動機構62來從接觸位置起而一直上升至剝離開始位置處(參照圖7)，並一面藉由旋轉機構62e來作旋轉一面從剝離開始位置來朝向剝離結束位置移動(參照圖8)，並從台30上之基板W之外周區域A1a而將硬化狀態之熱可塑性樹脂B1a剝下。藉由此，硬化狀態之熱可塑性樹脂B1a，係一面被卷取於樹脂材B1之周圍，一面被從基板W之外周區域A1a而去除。若是此樹脂去除結束，則供給頭61係從剝離結束位置而移動至洗淨位置處。
若是前述之供給頭61移動至洗淨位置處，則在步驟S6中，完成樹脂剝離之基板W，係從台30上藉由前述之機器手(未圖示)而被搬出至處理室20外，並為了進行下一工程而被搬送裝置進行搬送。
若是前述之供給頭61到達洗淨位置處，則在步驟S7中，樹脂材B1及其周圍之熱可塑性樹脂B1a係被樹脂洗淨部70所洗淨。若是供給頭61位置於洗淨位置處，則供給頭61所保持的樹脂材B1係位置於洗淨槽73內(參照圖9)。在此狀態下，係從噴嘴71而吐出洗淨液，並噴灑至進行旋轉之樹脂材B1及其周圍之熱可塑性樹脂B1a上。藉由此，樹脂材B1及其周圍之熱可塑性樹脂B1a係成為清淨。從噴嘴71所吐出的洗淨液、從樹脂材B1或其周圍之熱可塑性樹脂B1a所落下的洗淨液等，係藉由洗淨槽73而被承接並作儲存。又，洗淨後之樹脂材B1和其周圍之熱可塑性樹脂B1a，係被吹附有乾燥空氣或氮氣並被乾燥。若是此樹脂洗淨結束，則供給頭61係從洗淨位置而移動至成形位置處。
若是前述之供給頭61到達成形位置處，則在步驟S8中，樹脂材B1及其周圍之熱可塑性樹脂B1a係被樹脂成形部80進行成形。若是供給頭61位置於成形位置處，則供給頭61所保持的樹脂材B1及其周圍之熱可塑性樹脂B1a係位置於凹部81內(參照圖10)。凹部81之周邊溫度係藉由發熱體82之加熱而例如成為150℃以上。因此，凹部81內之樹脂材B1及其周圍之熱可塑性樹脂B1a係軟化並成為一體，並基於凹部81之內面形狀以及內面尺寸而被成形為原本之形狀以及尺寸(參照圖11以及圖12)。之後，若是由發熱體82所致之加熱被停止，而凹部81之周邊溫度例如成為較150℃而更低，則軟化狀態之熱可塑性樹脂(B1、B1a)係硬化。若是此熱可塑性樹脂(B1、B1a)之硬化結束，則供給頭61係從成形位置而移動至待機位置處。
在此種基板處理工程中，樹脂材B1之前端部分係與身為台30上之基板W之外周端部A1之一部分的外周區域A1a作接觸。作了接觸的樹脂材B1之前端部分，係藉由從基板W而來之熱，而在外周區域A1a處軟化，軟化了的前端部分之熱可塑性樹脂係以覆蓋基板W之外周區域A1a以及外周面A1b的方式而浸濕並擴廣，並因應於台30之旋轉，而被塗布在台30上之基板W之外周區域A1a以及外周面A1b上。藉由此，基板W之外周區域A1a以及外周面A1b之全體，係被熱可塑性樹脂B1a所覆蓋。藉由此，在身為後續工程之蝕刻工程中，由於基板W上之熱可塑性樹脂B1a係作為保護基板W之外周面A1b免於受到蝕刻液之影響的保護材而起作用，因此，基板W之外周面A1b被蝕刻液所侵蝕的情形係被作抑制，而能夠對於基板W之直徑變小、亦即是基板尺寸縮小的情形作抑制。其結果，由於係成為就算是在基板W之外周部分處也能夠得到所期望之尺寸的元件晶片，因此係能夠對於元件晶片之損失的發生作抑制。又，係成為能夠進行像是後續工程中之由機器人所致之搬送等的後續工程中之基板搬送，而能夠使良率提升。
又，硬化狀態之熱可塑性樹脂B1a係藉由供給頭61而被剝離並被從基板W而去除。藉由此，相較於以藥液來將硬化狀態之熱可塑性樹脂B1a溶解並從基板W而去除的情況，係能夠以短時間來將硬化狀態之熱可塑性樹脂B1a從基板W而去除，並且也不需要使用藥液，因此係能夠對起因於藥液之廢棄所致的對環境所造成的負擔有所抑制。進而，由於係成為能夠對於熱可塑性樹脂B1a進行再利用，因此，係能夠對成本作抑制，又，係能夠對起因於熱可塑性樹脂B1a之廢棄所致的對環境所造成的負擔有所抑制。另外，熱可塑性樹脂，相較於熱硬化性樹脂，其之相對於基板W之密著度係為低。因此，藉由並非使用熱硬化性樹脂而是使用熱可塑性樹脂，係成為易於將基板W上之硬化狀態之熱可塑性樹脂B1a從基板W而剝離，而能夠並不對於基板W造成損傷地而將硬化狀態之熱可塑性樹脂B1a從基板W去除。在使用有熱硬化性樹脂的情況時，為了並不對於基板W造成損傷地而將硬化狀態之熱硬化性樹脂從基板W去除，係成為需要設置進行由藥液等所致之去除的裝置，並成為導致裝置之複雜化和成本的提升。
又，若依據前述之基板處理工程，則係使身為硬化狀態之熱可塑性樹脂的樹脂材B1與基板W直接作接觸，並藉由以基板加熱部40而被作了加熱的基板W之熱來使其軟化，而將熱可塑性樹脂B1a塗布在基板W處。亦即是，由於樹脂材B1係在基板W上而軟化，因此係能夠使基板W與熱可塑性樹脂B1a之間之密著性提升。又，由於樹脂材B1係在基板W上而軟化，因此係能夠對於熱可塑性樹脂之劣化作抑制，又，係能夠將塗布時間縮短。
又，環狀之基板加熱部40之寬幅(基板W之半徑方向之寬幅)，較理想，係設定為會較前述之塗布寬幅(例如，3～4mm)而更大。由於係成為能夠對於在前述之塗布寬幅內之被處理面Wa處而產生溫度梯度的情形作抑制，因此，係能夠得到基板W與熱可塑性樹脂B1a之間之均一的密著度。
又，係能夠對於使樹脂材B1對於基板W之被處理面Wa作接觸的接觸面積進行調整，亦即是係能夠相對於基板W之被處理面Wa而使樹脂材B1在基板W之半徑方向上作移動並對於樹脂材B1與基板W之被處理面Wa之間的接觸面積作調整。藉由此，係能夠對於在基板W之被處理面Wa上而塗布熱可塑性樹脂B1a的塗布寬幅(基板W之半徑方向之寬幅)作調整。
如同以上所作了說明一般，若依據第1實施形態，則藉由使身為硬化狀態之熱可塑性樹脂的樹脂材B1與基板W之外周端部A1、例如與基板W之外周區域A1a作接觸，並藉由以基板加熱部40而作了加熱的基板W之熱來使其軟化，再將軟化了的熱可塑性樹脂B1a供給至台30上之基板W之外周區域A1a以及外周面A1b處，該基板W之外周區域A1a以及外周面A1b係被軟化狀態之熱可塑性樹脂B1a所覆蓋。之後，軟化狀態之熱可塑性樹脂B1a係硬化，基板W之外周區域A1a以及外周面A1b係被硬化狀態之熱可塑性樹脂B1a所覆蓋。藉由此，在蝕刻工程中，基板W之外周面A1b係被硬化狀態之熱可塑性樹脂B1a所保護，基板W之外周面A1b被蝕刻液所侵蝕的情形係被作抑制，因此係能夠對於基板尺寸的縮小作抑制。
(樹脂塗布之其他例)
將前述之由供給頭61所致之樹脂塗布之例，作為第1例，並作為樹脂塗布之其他例，而針對第2例以及第3例作說明。
作為第2例，如同在圖14中所示一般，供給頭61，係使樹脂材B1與台30上之基板W之外周面A1b作接觸。台30上之基板W係藉由基板加熱部40而被加熱，基板W之溫度，例如係成為150℃以上。因此，與台30上之基板W之外周面A1b作了接觸的樹脂材B1之前端部分(圖14中之右端部分)係軟化。軟化了的樹脂材B1之前端部分之熱可塑性樹脂，係因應於台30之旋轉(1圈旋轉)，來沿著基板W之外周面A1b而依序附著。藉由此，如同圖15中所示一般，在基板W之外周面A1b之全體(全面)處，係被塗布有軟化狀態之熱可塑性樹脂B1a，該基板W之外周面A1b係被軟化狀態之熱可塑性樹脂B1a所覆蓋。若是熱可塑性樹脂B1a被塗布在基板W之外周面A1b之全體(全面)上，則由基板加熱部40所致之加熱係被停止，而基板W之溫度例如成為較150℃而更低，如此一來，軟化狀態之熱可塑性樹脂B1a係硬化。另外，由基板加熱部40所致之加熱的停止，係亦可構成為在樹脂材B1從基板W而離開之後再進行。
作為第3例，供給頭61，係使樹脂材B1與台30上之基板W之外周區域A1a作接觸。此樹脂材B1之直徑(基板W之半徑方向之寬幅)，相較於第1例，係較基板W之外周區域A1a之寬幅(基板W之半徑方向之寬幅)而更窄。台30上之基板W係藉由基板加熱部40而被加熱，基板W之溫度，例如係成為150℃以上。因此，與台30上之基板W之外周區域A1a作了接觸的樹脂材B1之前端部分係軟化。軟化了的樹脂材B1之前端部分之熱可塑性樹脂，係如同圖16中所示一般，以覆蓋基板W之外周區域A1a的方式而浸濕並擴廣，並因應於台30之旋轉(1圈旋轉)，來沿著台30上之基板W之外周區域A1a而依序附著。藉由此，在基板W之外周區域A1a之全體處，係被塗布有軟化狀態之熱可塑性樹脂B1a，該基板W之外周區域A1a係被軟化狀態之熱可塑性樹脂B1a所覆蓋。若是熱可塑性樹脂B1a被塗布在基板W之外周區域A1a之全體處，則由基板加熱部40所致之加熱係被停止，而基板W之溫度例如成為較150℃而更低，如此一來，軟化狀態之熱可塑性樹脂B1a係硬化。另外，由基板加熱部40所致之加熱的停止，係亦可構成為在樹脂材B1從基板W而離開之後再進行。
在前述之第2和第3例中，亦係與前述之第1例相同的，能夠對於基板尺寸之縮小作抑制。另外，在第3例中，基板W之外周面A1b之全面係並未被硬化狀態之熱可塑性樹脂B1a所覆蓋，但是基板W之外周區域A1a之全面係被硬化狀態之熱可塑性樹脂B1a所覆蓋(參照圖16)。在蝕刻工程中，被供給至進行旋轉的基板W之被處理面Wa之中央附近處的蝕刻液，係藉由以基板W之旋轉所致之離心力而擴廣至基板W之被處理面Wa之全體。此作了擴廣的蝕刻液，係起因於由基板W之旋轉所致的離心力而朝向基板W之外飛散，但是，此時，藉由被塗布在基板W之外周區域A1a上的硬化狀態之熱可塑性樹脂B1a，蝕刻液之飛散方向係相對於水平面而偏向至上方。因此，蝕刻液流入至基板W之外周面A1b處的情形係被作抑制。藉由此，與前述之第1例相同的，係能夠對於基板尺寸之縮小作抑制。第3例，較理想，係使用在當基板W之外周面A1b或下面為藉由SiN或SiO2
而作了被膜時的情況中。但是，較理想，為了確實地保護基板W之外周面A1b免於受到蝕刻液之侵蝕，係藉由熱可塑性樹脂B1a來將外周面A1b之全面完全地作覆蓋。又，係亦可構成為對於1枚的基板W，而進行第2例與第3例之雙方。
〈其他實施形態〉
在前述之說明中，雖係針對在將硬化狀態之熱可塑性樹脂B1a剝離時，使供給頭61所保持的樹脂材B1之前端部分與基板W上之軟化狀態之熱可塑性樹脂B1a之一部分作接觸，並在該狀態下使基板W上之軟化狀態之熱可塑性樹脂B1a硬化，而使樹脂材B1之前端部分與基板W上之熱可塑性樹脂B1a之一部分固定接著的情況，來作了例示，但是，係並不被限定於此。例如，係亦可如同圖17中所示一般，在供給頭61處設置發熱體61a，並藉由此發熱體61a來使樹脂材B1之前端部分軟化並與基板W上之硬化狀態之熱可塑性樹脂B1a之一部分作接觸，並在該狀態下使軟化狀態之樹脂材B1之前端部分硬化，而使樹脂材B1之前端部分與基板W上之熱可塑性樹脂B1a之一部分固定接著。另外，發熱體61a，係被設置在供給頭61之前端面處，並作為藉由發熱而使樹脂材B1之一部分軟化的樹脂加熱部而起作用。作為此發熱體61a，例如係使用鎳鉻線等之電熱線。發熱體61a，係被與控制部90作電性連接，其之驅動係被控制部90所控制。另外，供給頭61，係經由彈簧(未圖示)而被支持於旋轉機構62e處，在此點上，係與使用圖1所作了說明的實施形態相同。又，在前述之塗布工程中，如同圖17中所示一般，樹脂材B1係逐漸地減少，樹脂材B1之前端面(圖17中之下面)與發熱體61a之間之垂直分離距離係逐漸變短，但是，就算是塗布結束，發熱體61a也不會從樹脂材B1之前端面而露出，並存在於接近該前端面之位置處(參照圖17之右圖)。亦即是，樹脂材B1，係就算是在塗布結束後發熱體61a也不會從樹脂材B1之前端面露出地而以存在於接近該前端面之位置處的方式而被形成。
又，在前述之說明中，作為發熱體61a或82，雖係針對使用有鎳鉻線等之電熱線的情況來作了例示，但是，係並不被限定於此，例如，係亦可構成為使用有熱板或鞘套加熱器、燈管加熱器、陶瓷加熱器、石英管加熱器等。
又，在前述之說明中，雖係針對在將硬化狀態之熱可塑性樹脂B1a剝離時，使供給頭61一面進行旋轉一面朝向一方向移動並從基板W而將硬化狀態之熱可塑性樹脂B1a剝離的情況，來作了例示，但是，係並不被限定於此，例如，係亦可構成為並不使供給頭61旋轉地而朝向一方向移動並從基板W而將硬化狀態之熱可塑性樹脂B1a剝離，或者是，亦可構成為並不使供給頭61朝向一方向移動地而進行旋轉並從基板W而將硬化狀態之熱可塑性樹脂B1a剝離。
又，在前述之說明中，雖係針對在將硬化狀態之熱可塑性樹脂B1a剝離的情況時，使供給頭61所保持的樹脂材B1之前端部分與基板W上之熱可塑性樹脂B1a作固定接著，並將硬化狀態之熱可塑性樹脂B1a作保持的情況，來作了例示，但是，係並不被限定於此，例如，係亦可構成為替代供給頭61而設置實行剝離之剝離手。作為剝離手，係能夠使用有鉗狀或鑷狀、針狀之手，或者是使用吸引手。鉗狀或鑷狀之手，係將硬化狀態之熱可塑性樹脂B1a的一部分作捏抓並作保持。針狀之手，係突刺進硬化狀態之熱可塑性樹脂B1a的一部分中並作保持。吸引手，係將硬化狀態之熱可塑性樹脂B1a的一部分作吸引並作保持。
又，在前述之說明中，雖係針對在對於樹脂材B1及其周圍之硬化狀態之熱可塑性樹脂B1a作洗淨時，從樹脂洗淨部70之噴嘴71來吐出洗淨液並進行洗淨的情況，來作了例示，但是，係並不被限定於此，例如，係亦可構成為在洗淨槽73中預先儲存洗淨液，並將樹脂材B1浸漬在該洗淨槽73內之洗淨液中，並且亦可構成為在該浸漬狀態下而使供給頭61藉由旋轉機構62e而進行旋轉。
又，在前述之說明中，雖係針對將基板W作吸附並作保持之台30而作了例示，但是，係並不被限定於此，例如，係亦可構成為使用將基板W夾入並作保持之台。於此情況，台係具備有複數之保持構件，並藉由該些之保持構件來將基板W夾入，並保持於水平狀態。各保持構件係相互連動並對於基板W之外周面A1b而從水平方向來分別作抵接，並將基板W夾入。作為保持構件，例如，係使用有具備銷和將該銷作支持之旋轉板等的保持構件。
又，在前述之說明中，雖係針對在對於基板W而塗布熱可塑性樹脂B1a時，藉由供給頭61來對於基板W之外周區域A1a和外周面A1b之全體而供給熱可塑性樹脂B1a的情況，來作了例示，但是，係並不被限定於此，例如，依存於軟化狀態之熱可塑性樹脂B1a之黏度或製品規格(作為其中一例，所要求之品質)等之條件，係亦可構成為並非為全體而是作部分性的供給。
又，在前述之說明中，雖係針對藉由相異之個體的基板處理裝置來實行蝕刻處理的情況，而作了例示，但是，係並不被限定於此，例如，係亦可構成為在處理室20內設置供給噴嘴和杯，並藉由前述之基板處理裝置10來實行對於基板W之被處理面Wa的蝕刻處理。供給噴嘴，係對於台30上之基板W之被處理面Wa而供給蝕刻液。杯，例如，係被形成為上部開口之圓筒狀，並收容台30，並且以內周面來承受從該台30上的基板W之被處理面Wa所飛散出之蝕刻液。另外，係亦可構成為除了蝕刻液以外，亦將洗淨液或超純水等之其他的處理液依序作供給。
又，在前述之說明中，雖係針對藉由蝕刻液來對於基板W之單面(上面)進行處理的情況，而作了例示，但是，係並不被限定於此，例如，係亦可構成為對於基板W之雙面(上面以及下面)進行處理。另外，在藉由前述之基板處理裝置10來對於基板W之雙面進行處理的情況時，係設置對於基板W之上面供給處理液之供給噴嘴、和對於基板W之下面供給處理液之供給噴嘴。
又，在前述之說明中，雖係針對將1個的供給頭61兼用為用以對於基板W塗布熱可塑性樹脂B1a之供給頭和用以將被塗布在基板W上之熱可塑性樹脂B1a從基板W而剝離的供給頭的情況，來作了例示，但是，係亦可分別地作設置。
又，在前述之說明中，雖係針對在基板W上之樹脂材B1之接觸開始點作了1周的環繞的時序處而使供給頭61移動至待機位置處的情況，來作了例示，但是，此朝向待機位置之移動時序，係亦可構成為在上述接觸開始點作了2周以上之環繞移動後的時間點。於此情況，係亦可構成為在每次繞圈時使供給頭61在基板W之半徑方向上而有所偏移。
又，在前述之說明中，雖係針對使台30旋轉相對於台30上之基板W之外周端部A1而使供給頭61進行相對移動的情況，來作了例示，但是，在熱可塑性樹脂B1a之供給中，係只要使台30上之基板W與供給頭61進行相對移動即可。例如，係亦可構成為並不進行台30之旋轉，而相對於台30上之基板W之外周端部A1來使供給頭61移動。另外，作為使基板W以及供給頭61作相對移動之移動機構，除了使台30作旋轉之台旋轉機構50以外，例如，係亦可使用使供給頭61沿著圓環或矩形環等之環或者是沿著直線來移動的移動機構(作為其中一例，例如，將供給頭61作支持並成為能夠使其曲線狀或直線狀地進行滑動移動的導引構件、成為滑動移動之驅動源之馬達等)。
以上，雖係針對本發明之數個實施形態作了說明，但是，此些之實施形態係僅 為作為例子所提示者，而並非為對於發明之範圍作限定。此些之新穎的實施形態，係可藉由其他之各種形態來實施，在不脫離發明之要旨的範圍內，係可進行各種之省略、置換、變更。此些之實施形態或其變形，係亦被包含於發明之範圍或要旨中，並且亦被包含在申請專利範圍中所記載的發明及其均等範圍內。Hereinafter, one of the embodiments will be described with reference to the drawings. (Basic Configuration) As shown in FIG. 1 , the substrate processing apparatus 10 of the first embodiment includes a processing chamber 20 , a table 30 , a substrate heating unit 40 , a table rotating mechanism 50 , and a resin supply unit 60 . , and the resin cleaning unit 70 , the resin molding unit 80 , and the control unit 90 . The processing chamber 20 is a processing cartridge for processing the substrate W having the surface Wa to be processed. The processing chamber 20 is, for example, formed in a box shape, and accommodates the table 30 , a part of the table rotation mechanism 50 , the resin supply unit 60 , the resin cleaning unit 70 , the resin molding unit 80 , and the like. As the substrate W, for example, a wafer or a liquid crystal substrate is used. Above the aforementioned processing chamber 20, a cleaning unit 21 is provided. The cleaning unit 21 includes, for example, a filter such as a HEPA filter and a fan (neither are shown), and purifies the downward blowing flow that blows down from the top surface of the clean room where the substrate processing apparatus 10 is installed Then, it is introduced into the processing chamber 20 to generate an air flow that flows from above to below in the processing chamber 20 . The cleaning unit 21 is electrically connected to the control unit 90 , and its drive is controlled by the control unit 90 . The table 30 is positioned in the vicinity of the center in the processing chamber 20, and is horizontally installed on the table rotation mechanism 50 so as to be rotatable in a horizontal plane. This stage 30 is, for example, called a turntable (rotary stage), and the center of the surface Wa of the substrate W to be processed is positioned on the rotation axis of the stage 30 . The stage 30 sucks and holds the substrate W placed on the upper surface thereof (suction holding). The substrate heating unit 40 is formed in a ring shape (eg, a ring shape), and is provided on the upper surface (surface on which the substrate W is placed) side of the stage 30 . The substrate heating unit 40 is in contact with the lower peripheral end portion A1 of the lower surface of the substrate W (substrate W on the table 30 ) supported by the table 30 , and heats the substrate W on the table 30 . As the substrate heating unit 40, for example, a hot plate, a sheath heater, a bulb heater, a ceramic heater, a quartz tube heater, or the like is used. The substrate heating unit 40 is electrically connected to the control unit 90 , and its drive is controlled by the control unit 90 . The table rotation mechanism 50 supports the table 30 and is configured to rotate the table 30 in a horizontal plane. For example, the table rotation mechanism 50 is provided with a rotation shaft connected to the center of the table 30, and a motor (none of which is shown) that rotates the rotation shaft. The table rotating mechanism 50 rotates the table 30 through the rotating shaft by the drive of the motor. The table rotation mechanism 50 is electrically connected to the control unit 90 , and its drive is controlled by the control unit 90 . The resin supply unit 60 includes a supply head 61 and a head moving mechanism 62 . In this resin supply unit 60, the supply head 61 is moved by the head moving mechanism 62, and the heat in the hardened state held by the supply head 61 is released from above the outer peripheral end A1 of the substrate W on the stage 30. The resin material B1 of the plastic resin is in contact with the outer peripheral end portion A1 of the substrate W on the stage 30 . The supply head 61, as shown in FIG. 2, is a jig for holding the resin material B1 at the front end. The supply head 61 is formed so as to be movable in the horizontal direction, the vertical direction, and the oblique direction above or around the stage 30 by the head moving mechanism 62, that is, it is formed so as to be able to move freely in three dimensions. . The supply head 61 is moved by the head moving mechanism 62 to face the outer peripheral end portion A1 of the substrate W on the stage 30 , and presses and adheres the held resin material B1 to the outer periphery of the substrate W on the table 30 . make contact at the end A1. The resin material B1 is a thermoplastic resin in a hardened state (solid state), for example, a thermoplastic resin formed into a cylindrical shape (rod shape) and hardened. The diameter of the resin material B1 is, for example, 10 mm. This resin material B1 is formed so that it can be attached to and detached from the supply head 61, and can be exchanged. As the thermoplastic resin, for example, PVA (polyvinyl alcohol), EVA (ethylene vinyl acetate copolymer), and urethane resin are used. This thermoplastic resin has insolubility with respect to the etching liquid used in the etching process, that is, has resistance, and functions as a protective material for protecting the substrate W from the etching liquid. Thermoplastic resin softens when its temperature is 150°C or higher, for example, and hardens when its temperature is lower than 150°C. The head moving mechanism 62 includes a movable arm 62a, an arm moving mechanism 62b, and a plurality of rotating mechanisms 62c, 62d, and 62e. The head moving mechanism 62 moves the movable arm 62a by the arm moving mechanism 62b, the rotation mechanism 62d, and the like, and moves the supply head 61 to a desired position. The movable arm 62a is formed so that it can be bent in the middle by the rotation mechanism 62c. The rotation mechanism 62c is provided with a rotation shaft and a motor (neither of which are shown) extending in the horizontal direction, and functions as a joint. One end of the movable arm 62a is provided at the arm moving mechanism 62b via the rotation mechanism 62d, and the movable arm 62a is formed so as to be rotatable about the one end as a rotation center. The rotating mechanism 62d is provided with a rotating shaft and a motor (neither of which are shown) extending in the horizontal direction, and functions as a joint. Moreover, the other end of the movable arm 62a holds the supply head 61 via the rotation mechanism 62e. The rotation mechanism 62e is provided with a rotation shaft and a motor (neither of which are shown) extending in the vertical direction, and functions as a rotation drive part that rotates the supply head 61 . Each of the rotating mechanisms 62c, 62d, and 62e is electrically connected to the control unit 90, respectively, and the drive systems of these are controlled by the control unit 90. The arm moving mechanism 62b supports the movable arm 62a, the rotating mechanism 62d, and the like, and swings the movable arm 62a in the horizontal direction. For example, the arm moving mechanism 62b is provided with a column supporting the movable arm 62a and the rotating mechanism 62d, a motor for rotating the column, and the like (none of which are shown). The arm moving mechanism 62b is driven by the motor to rotate the support and move the movable arm 62a in the horizontal direction. The arm moving mechanism 62 b is electrically connected to the control unit 90 , and its drive is controlled by the control unit 90 . Here, as shown in FIGS. 3 and 4 , the outer peripheral end portion A1 of the substrate W is defined by the outer peripheral area A1a of the upper surface of the substrate W (the surface to be processed Wa) and the outer peripheral surface of the substrate W (the surface of the substrate W). The outer peripheral end surface) A1b and the lower surface of the substrate W are constituted by the outer peripheral area A1c. Moreover, as shown in FIGS. 3-5, on the upper surface of the board|substrate W, the etching target area|region R1 which becomes the object of an etching process in an etching process process exists. The etching target region R1 is a region on the upper surface of the substrate W from which the outer peripheral region A1a of the upper surface of the substrate W has been removed. The region other than the etching target region R1 is a non-etching target region that is not the target of the etching treatment in the etching treatment process. The etching target region R1 is a circular region (refer to FIG. 5 ), and the upper surface outer peripheral region A1a of the substrate W and the lower outer peripheral region A1c of the substrate W are respectively formed from the outer periphery of the substrate W toward the inner side (the outer peripheral region of the substrate W). center side) and has a specific wide annular region of several mm (for example, 4 mm or less). For example, in the process of coating the thermoplastic resin B1a, the aforementioned supply head 61 is moved by the head moving mechanism 62 to a position just above the outer peripheral area A1a of the substrate W on the stage 30, and is The upper position rises and descends, and as shown in FIG. 3 , the resin material B1 is brought into contact with the outer peripheral region A1a of the substrate W on the stage 30 . The substrate W on the stage 30 is heated by the substrate heating unit 40 , and the temperature of the outer peripheral end portion A1 of the substrate W is, for example, 150° C. or higher. Therefore, the front end portion (lower end portion in FIG. 3 ) of the resin material B1 which is in contact with the outer peripheral region A1a of the substrate W on the stage 30 is softened. The thermoplastic resin at the front end portion of the softened resin material B1 is soaked and spread so as to cover the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W, and along the table 30 in response to the rotation of the table 30 The outer peripheral area A1a and the outer peripheral surface A1b of the substrate W are sequentially attached (refer to FIGS. 4 and 5 ). Thereby, as shown in FIGS. 4 and 5 , the entire outer peripheral region A1a and the outer peripheral surface A1b of the substrate W are coated with the thermoplastic resin B1a in a softened state, the outer peripheral region A1a and The outer peripheral surface A1b is covered with the softened thermoplastic resin B1a. After that, when the heating by the substrate heating unit 40 is stopped and the temperature of the outer peripheral end A1 of the substrate W becomes lower than, for example, 150° C., the thermoplastic resin B1a in the softened state on the substrate W is cured. The hardened state may also be in the form of a gel. The resin-coated substrate W is carried out from the processing chamber 20 by a transfer device (not shown) including a robot and the like, and is carried into an etching processing apparatus which is a separate entity from the substrate processing apparatus 10 . (not shown), and processed by etching solution. In this coating process, the thermoplastic resin B1a softened from the resin material B1 is supplied to the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the stage 30, and the outer peripheral area A1a and the outer peripheral area A1b corresponding to one circumference of the substrate W are supplied on the stage 30 The outer peripheral surface A1b is coated with the softened thermoplastic resin B1a. At this time, the resin material B1 is gradually reduced, and the vertical separation distance between the front end surface of the resin material B1 (the lower surface in FIGS. 3 and 4 ) and the front end surface of the supply head 61 (the lower surface in FIGS. 3 and 4 ) is gradually changed. Although it is short, the front end face of the supply head 61 is not exposed from the front end face of the resin material B1 even after coating is completed (see FIGS. 3 and 4 ). That is, as shown in FIG. 4, the resin material B1 is formed so that the front end surface of the supply head 61 is not exposed from the front end surface of the resin material B1 even after coating is completed. In addition, the supply head 61 is supported by the rotating mechanism 62e via a spring (not shown) which is an example of the pressing member, and when the resin material B1 is brought into contact with the outer peripheral area A1a of the substrate W, the resin material B1 is pressed and attached to the substrate W by this spring. And, the descending stop position of the supply head 61 is set so that this pressing adhesion state may be maintained even if the resin material B1 gradually decreases. That is, when the resin material B1 is being applied to the substrate W, the supply head 61 does not move in the vertical direction with respect to the applied surface of the substrate W. In addition, the lowering stop position can be determined in advance by experiments in consideration of the type of resin material B1 used, the rotational speed of the table 30, the film thickness of the thermoplastic resin B1a required on the substrate W, the length of the spring, and the like. Wait for it. When the above-mentioned etching process is completed, the processed substrate W is carried into the processing chamber 20 again by a transfer device (not shown), and is held on the stage 30. After that, the supply head 61 is removed from the stage. The outer peripheral area A1a and outer peripheral surface A1b of the board|substrate W on 30 peel off the thermoplastic resin B1a of the hardened state. In this peeling process, the supply head 61 is moved by the head moving mechanism 62 to a position just above the outer peripheral area A1a of the substrate W on the stage 30, and descends from the position just above, and As shown in FIG. 6 , the leading end portion of the held resin material B1 is brought into contact with a portion of the thermoplastic resin B1a in a softened state at the substrate W coated on the stage 30 to adhere. Moreover, the temperature of the outer peripheral edge part A1 of the board|substrate W on the stage 30 is set to 150 degreeC or more by the heating by the board|substrate heating part 40, for example. Therefore, the thermoplastic resin B1a on the substrate W is softened. In a state where the front end portion of the resin material B1 is adhered to a portion of the thermoplastic resin B1a in a softened state, if the heating by the substrate heating portion 40 is stopped, the temperature of the outer peripheral end portion A1 of the substrate W, for example, becomes relatively high. When the temperature is lower than 150°C, the softened thermoplastic resin B1a on the substrate W is hardened. Thereby, the leading end portion of the resin material B1 held by the supply head 61 is fixed to a portion of the thermoplastic resin B1a on the substrate W. Next, the supply head 61 is in a state where the front end portion of the resin material B1 is fixed to a portion of the thermoplastic resin B1a on the substrate W, as shown in FIG. The contact position is raised to the peeling start position just above it, and the thermoplastic resin B1a in the hardened state is peeled off from the outer peripheral area A1a of the substrate W on the stage 30, and then, as shown in FIG. 8, The head moving mechanism 62 is used to move from the peeling start position to the peeling end position (point symmetry with the rotation axis of the table 30 as the center with respect to the peeling start position) along the processed surface Wa of the substrate W on the table 30. location). In this movement from the peeling start position to the peeling end position, the supply head 61 is rotated by the rotation mechanism 62e, while the outer peripheral area A1a of the substrate W on the table 30 is peeled off the hardening The thermoplastic resin B1a in the state is wound around the resin material B1 and collected. In addition, in FIG. 8, although the rotation axis of the supply head 61 is directed in the vertical direction, the rotation axis of the supply head 61 may be moved from the state shown in FIG. 7 to, for example, the rotation mechanism 62c facing The rotation center direction of the stage 30 is inclined at 30 degrees, and the supply head 61 is configured to rotate in this state. In this case, the thermoplastic resin B1a peeled off from the substrate W is easily wound around the resin material B1. Here, since the thermoplastic resin B1a has a low degree of adhesion to the substrate W compared to materials such as thermosetting resins, it can adhere to the substrate W without damaging the substrate W. The hardened thermoplastic resin B1a on the substrate W is mechanically peeled off. On the other hand, when trying to mechanically peel off the hardened thermosetting resin adhering to the substrate W, the substrate W will be damaged. In addition, once the thermosetting resin is hardened, the thermosetting resin cannot be softened by heat, and in order to remove the thermosetting resin, it is necessary to dissolve the thermosetting resin with a chemical solution or the like. Returning to FIG. 1 , the resin cleaning portion 70 is provided around the table 30 so as not to interfere with the rotational movement of the table 30 . The resin cleaning unit 70 is provided with a nozzle 71 , a support member 72 , and a cleaning tank 73 as shown in FIGS. 1 and 9 . The resin cleaning unit 70 discharges cleaning liquid from the nozzle 71 toward the resin material B1 held by the supply head 61, and winds the resin material B1 and the thermoplastic resin B1a around the resin material B1 around the resin material B1. The hardened thermoplastic resin B1a) is washed. The nozzle 71 discharges cleaning liquid (eg, pure water), and is supported by the support member 72 so as to discharge the cleaning liquid toward the inside of the cleaning tank 73 . The support member 72 is provided in the washing tank 73 and supports the nozzle 71 so that the nozzle 71 can be directed into the washing tank 73 to discharge the washing liquid. The cleaning tank 73 receives and stores the cleaning liquid discharged from the nozzle 71 and the cleaning liquid dropped from the resin material B1 or the thermoplastic resin B1a around it. In the cleaning process, the supply head 61 is moved to a position just above the cleaning tank 73 by the head moving mechanism 62, and from the position just above, as shown in FIG. 9, The resin material B1 is lowered to the cleaning position located in the cleaning tank 73 . When the resin material B1 is lowered or stopped, the rotation mechanism 62e rotates the supply head 61 holding the resin material B1. The nozzle 71 discharges the cleaning liquid and sprays it on the rotating resin material B1 and the thermoplastic resin B1a around it, and cleans the resin material B1 and the thermoplastic resin B1a around it. Thereby, the thermoplastic resin B1a of the resin material B1 and its periphery becomes clean. In addition, the cleaning liquid discharged from the nozzle 71 and the cleaning liquid falling from the resin material B1 or the surrounding thermoplastic resin B1a are received and stored by the cleaning tank 73 . In addition, although the supply head 61 is rotated during the cleaning of the resin material B1, if a plurality of nozzles are arranged around the resin material B1 positioned at the cleaning position, each nozzle is configured so that When the cleaning liquid is discharged, the supply head 61 does not need to be rotated during cleaning. Moreover, the resin material B1 after washing|cleaning is blown with dry air or nitrogen gas by the gas blowing part (not shown), and it is dried. Returning to FIG. 1 , the resin molding portion 80 is provided around the table 30 so as not to interfere with the rotational movement of the table 30 . This resin molding part 80 is provided with the concave part 81 and the heat generating body 82 as shown in FIG. 1 and FIGS. 10-12. The resin molding part 80 has the heating element 82 to make the temperature around the concave part 81, for example, 150° C. or higher, and the concave part 81 receives the resin material B1 held by the supply head 61 and the thermoplastic resin B1a around it. , and the resin material B1 and the surrounding thermoplastic resin B1a are softened to be integrally molded into the original shape. The recessed part 81 is provided on the upper surface of the resin molding part 80, and is formed as a mold for returning the resin material B1 to a cylindrical shape which is the original shape. The heating element 82 functions as a heating portion for heating the resin molding portion 80 . As the heating element 82, a heating wire such as a nickel-chromium wire is used, for example. The heating element 82 is electrically connected to the control unit 90 , and its drive is controlled by the control unit 90 . In the molding process, the supply head 61 is moved to a position just above the resin molding part 80 by the head moving mechanism 62, and from the position just above, as shown in FIG. 10, the The thermoplastic resin B1a descends to the molding position so that the resin material B1 wound around is positioned in the recessed portion 81 . At this time, the surrounding temperature of the recessed part 81 is set to 150 degreeC or more by the heating of the heating element 82, for example. Therefore, the resin material B1 in the recessed portion 81 and the thermoplastic resin B1a around it are softened and integrated, and are restored to their original shape as shown in FIG. 11 . After that, when the heating by the heating element 82 is stopped and the surrounding temperature of the concave portion 81 becomes lower than, for example, 150° C., the thermoplastic resins (B1, B1a) in the softened state are hardened. After the hardening of the thermoplastic resins (B1, B1a), as shown in FIG. 12, the supply head 61 is raised from the molding position to the position just above it by the head moving mechanism 62, and from there Avoid the position directly above. In addition, if the inner surface of the concave portion 81 is previously mirror-finished or processed with a fluororesin, it is preferable from the viewpoint of mold release from the concave portion 81 after curing the thermoplastic resin (B1, B1a). As the fluororesin, for example, polytetrafluoroethylene is used. The control unit 90 includes a microcomputer for centrally controlling each unit, and a memory unit (not shown) for storing substrate processing information and various programs related to substrate processing. The control unit 90 performs the rotation operation of the table 30 by the table rotation mechanism 50, the supply operation of the thermoplastic resin B1a by the resin supply unit 60, and the resin supply operation based on the substrate processing information and various programs. Peeling operation of thermoplastic resin B1a by part 60, cleaning operation of thermoplastic resin B1a by resin cleaning part 70, molding operation of thermoplastic resin (B1, B1a) by resin molding part 80 etc. (including various processing related to control). For example, in the heating control, the control unit 90 controls the substrate heating unit 40 so that the temperature of the substrate W on the stage 30 becomes 150° C. or higher, and also controls the temperature of the resin molding unit 80 . The heating element 82 is controlled so that the peripheral temperature of the recessed portion 81 becomes 150° C. or higher. In addition, the thickness of the substrate W is, for example, 0.6 to 0.8 mm, and the substrate heating unit 40 can set the temperature of the outer peripheral end A1 of the substrate W to 150° C. or more in about several tens of seconds. (Substrate processing process) Next, the flow of the substrate processing process performed by the aforementioned substrate processing apparatus 10 will be described. In this substrate processing process, the control unit 90 controls the operation of each unit. As shown in FIG. 13, in step S1, the unprocessed substrate W is carried into the processing chamber 20 by the robot and placed on the stage 30, and the mounted substrate W is borrowed It is adsorbed and held by the stage 30 . The robot hand is avoided from the processing chamber 20 after the substrate W is placed. In addition, when the substrate W is carried in, the supply head 61 is located at a standby position (a position that is avoided from above the table 30 to allow the carrying in or out of the substrate W). If the aforementioned robot is avoided from the processing chamber 20, in step S2, the thermoplastic resin B1a is applied to the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the stage 30 by the resin supply unit 60. First, the substrate heating unit 40 starts heating the substrate W, and the temperature of the outer peripheral end portion A1 of the substrate W is, for example, 150° C. or higher. In addition, the table 30 starts to rotate by the table rotation mechanism 50, the rotation number of the table 30 becomes a specific rotation number (for example, 10 rpm or less), and the supply head 61 is turned from the standby by the head moving mechanism 62. position to move to the supply position. When the supply head 61 reaches the supply position, the leading end portion of the resin material B1 held by the supply head 61 comes into contact with the outer peripheral area A1a of the substrate W on the stage 30 (see FIG. 3 ). The front end portion of the resin material B1 in contact is softened by the heat from the substrate W, and the thermoplastic resin of the softened front end portion is wetted and wetted so as to cover the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W. In response to the rotation of the substrate W, it expands and is sequentially attached along the annular outer peripheral area A1a and the outer peripheral surface A1b. On the other hand, for example, if the contact start point of the resin material B1 in the substrate W is made to make a circle, the thermoplastic resin B1a is applied to the entire outer peripheral area A1a and the outer peripheral surface A1b of the substrate W (see FIG. 4 and 5), the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the stage 30 are covered with the softened thermoplastic resin B1a. When the resin coating is completed, the heating of the substrate heating unit 40 is stopped, the rotation of the stage 30 is stopped, and the supply head 61 is moved from the coating position to the standby position. When the heating by the substrate heating unit 40 is stopped and the temperature of the outer peripheral end portion A1 of the substrate W becomes lower than, for example, 150° C., the thermoplastic resin B1a in the softened state is cured. In addition, the stop of the heating by the board|substrate heating part 40 may be comprised so that it may be performed after the resin material B1 is separated from the board|substrate W. If the aforementioned supply head 61 returns to the standby position, in step S3, the substrate W on which the resin coating has been completed is carried out from the stage 30 by the aforementioned robot (not shown) to the outside of the processing chamber 20, And it is carried into the etching processing apparatus (not shown). Then, by the etching processing apparatus, the to-be-processed surface Wa of the board|substrate W is processed by the etching liquid. In the etching process, the etching solution is supplied, for example, to the vicinity of the center of the surface Wa of the substrate W that is rotated at 50 rpm, and the supplied etching solution is caused by the centrifugal force caused by the rotation of the substrate W. And it spreads to the whole to-be-processed surface Wa of the board|substrate W. Thereby, the liquid film of the etching solution is formed on the surface Wa of the substrate W to be processed, and the surface Wa of the substrate W to be processed is processed with the etching solution. At this time, the thermoplastic resin B1a on the processed surface Wa of the substrate W functions as a protective material that protects the outer peripheral surface A1b of the substrate W from the etchant. The substrate W after the etching process is sequentially subjected to a cleaning process using a cleaning solution and a drying process by rotating the substrate W at a high speed in the etching device. In step S4 , by the aforementioned robot, the substrate W on which the etching process has been completed is carried into the processing chamber 20 again and placed on the stage 30 , and the placed substrate W is moved by the stage 30 . held by adsorption. The robot hand is avoided from the processing chamber 20 after the substrate W is placed. In addition, when the board|substrate W is carried in, the supply head 61 is located in a standby position. If the aforementioned robot is avoided from the processing chamber 20 , in step S5 , the thermoplastic resin B1a in the hardened state is removed from the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the stage 30 . First, the substrate heating unit 40 starts heating the substrate W, the temperature of the outer peripheral end A1 of the substrate W becomes, for example, 150° C. or higher, and the thermoplastic resin B1a on the substrate W is softened. In addition, the supply head 61 is moved by the head moving mechanism 62 to a position just above the outer peripheral area A1a of the substrate W on the stage 30, and then descends from the position just above to the contact position (see FIG. 6). When the supply head 61 reaches the contact position, the front end portion of the resin material B1 comes into contact with a portion of the thermoplastic resin B1a in the softened state on the substrate W and adheres. In this state, if the substrate heating unit 40 stops heating and the temperature of the outer peripheral end portion A1 of the substrate W becomes lower than, for example, 150° C., the thermoplastic resin B1a softened on the substrate W is cured, and the supply head The front end portion of the resin material B1 held by 61 is fixed to a portion of the thermoplastic resin B1a on the substrate W. Next, the supply head 61 is raised from the contact position to the start of peeling by the head moving mechanism 62 in a state where the front end portion of the resin material B1 is fixed to a part of the thermoplastic resin B1a on the substrate W. position (refer to FIG. 7 ), and move from the peeling start position to the peeling end position (refer to FIG. 8 ) while being rotated by the rotation mechanism 62e, and harden from the outer peripheral area A1a of the substrate W on the stage 30 The thermoplastic resin B1a in the state is peeled off. Thereby, the thermoplastic resin B1a in the hardened state is removed from the outer peripheral region A1a of the substrate W while being wound around the resin material B1. When the resin removal is completed, the supply head 61 is moved from the peeling end position to the cleaning position. If the aforementioned supply head 61 is moved to the cleaning position, in step S6, the substrate W on which resin peeling is completed is carried out from the stage 30 by the aforementioned robot (not shown) to the outside of the processing chamber 20 , and is transported by the transport device for the next process. When the aforementioned supply head 61 reaches the cleaning position, the resin material B1 and the thermoplastic resin B1a around it are cleaned by the resin cleaning portion 70 in step S7. When the supply head 61 is positioned at the cleaning position, the resin material B1 held by the supply head 61 is positioned in the cleaning tank 73 (see FIG. 9 ). In this state, the cleaning liquid is discharged from the nozzle 71 and sprayed onto the rotating resin material B1 and the thermoplastic resin B1a around it. Thereby, the thermoplastic resin B1a of the resin material B1 and its periphery becomes clean. The cleaning liquid discharged from the nozzle 71, the cleaning liquid falling from the resin material B1 or the surrounding thermoplastic resin B1a, and the like are received by the cleaning tank 73 and stored. In addition, the cleaned resin material B1 and the surrounding thermoplastic resin B1a are dried by blowing dry air or nitrogen gas. When this resin cleaning is completed, the supply head 61 is moved from the cleaning position to the molding position. When the aforementioned supply head 61 reaches the molding position, in step S8 , the resin material B1 and the thermoplastic resin B1a around it are molded by the resin molding portion 80 . When the supply head 61 is positioned at the molding position, the resin material B1 held by the supply head 61 and the thermoplastic resin B1a around it are positioned in the recessed portion 81 (see FIG. 10 ). The surrounding temperature of the recessed part 81 becomes 150 degreeC or more by the heating of the heating element 82, for example. Therefore, the resin material B1 in the recessed portion 81 and the thermoplastic resin B1a around it are softened and integrated, and are molded into the original shape and size based on the shape and size of the inner surface of the recessed portion 81 (see FIGS. 11 and 11 ). 12). After that, when the heating by the heating element 82 is stopped and the surrounding temperature of the concave portion 81 becomes lower than, for example, 150° C., the thermoplastic resins (B1, B1a) in the softened state are hardened. When the curing of the thermoplastic resin (B1, B1a) is completed, the supply head 61 is moved from the molding position to the standby position. In such a substrate processing process, the front end portion of the resin material B1 is brought into contact with the outer peripheral region A1a which is a part of the outer peripheral end portion A1 of the substrate W on the stage 30 . The front end portion of the resin material B1 in contact is softened at the outer peripheral region A1a by the heat from the substrate W, and the thermoplastic resin of the softened front end portion covers the outer peripheral region A1a and the outer periphery of the substrate W. The surface A1b is wetted and expanded, and is applied to the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the table 30 in response to the rotation of the table 30 . Thereby, the whole of the outer peripheral area A1a and the outer peripheral surface A1b of the board|substrate W is covered with the thermoplastic resin B1a. In this way, in the etching process, which is a subsequent process, since the thermoplastic resin B1a on the substrate W functions as a protective material that protects the outer peripheral surface A1b of the substrate W from the etching solution, the substrate W is The erosion of the outer peripheral surface A1b by the etchant is suppressed, and the reduction in the diameter of the substrate W, that is, the reduction in the size of the substrate can be suppressed. As a result, since an element wafer of a desired size can be obtained even at the outer peripheral portion of the substrate W, the occurrence of loss of the element wafer can be suppressed. In addition, it is possible to perform substrate transfer in subsequent processes such as transfer by a robot in subsequent processes, thereby improving yield. In addition, the thermoplastic resin B1a in the hardened state is peeled off and removed from the substrate W by the supply head 61 . Thereby, the thermoplastic resin B1a in the hardened state can be removed from the substrate W in a short time compared to the case where the thermoplastic resin B1a in the hardened state is dissolved and removed from the substrate W by the chemical solution, and There is also no need to use the chemical solution, so that the burden on the environment due to the disposal of the chemical solution can be suppressed. Furthermore, since the thermoplastic resin B1a can be reused, the cost can be suppressed, and the burden on the environment due to the disposal of the thermoplastic resin B1a can be suppressed. In addition, the thermoplastic resin has a lower degree of adhesion to the substrate W than the thermosetting resin. Therefore, by using a thermoplastic resin instead of a thermosetting resin, the thermoplastic resin B1a in the hardened state on the substrate W can be easily peeled off from the substrate W, and the substrate W can be removed without causing damage to the substrate W. The thermoplastic resin B1a in the hardened state is removed from the substrate W. When a thermosetting resin is used, in order to remove the thermosetting resin in a hardened state from the substrate W without causing damage to the substrate W, it is necessary to provide a device for removing by a chemical solution or the like. And it becomes the complication of the device and the increase of the cost. In addition, according to the aforementioned substrate processing process, the resin material B1, which is a thermoplastic resin in a hardened state, is brought into direct contact with the substrate W, and the substrate W heated by the substrate heating unit 40 is heated by the heat of the substrate W. The thermoplastic resin B1a is applied to the substrate W in order to soften it. That is, since the resin material B1 is softened on the substrate W, the adhesiveness between the substrate W and the thermoplastic resin B1a can be improved. Moreover, since the resin material B1 is softened on the substrate W, the deterioration of the thermoplastic resin can be suppressed, and the coating time can be shortened. In addition, the width of the annular substrate heating portion 40 (the width in the radial direction of the substrate W) is preferably set to be larger than the aforementioned coating width (eg, 3-4 mm). Since it is possible to suppress the occurrence of a temperature gradient at the surface to be processed Wa within the above-mentioned coating width, it is possible to obtain a uniform density between the substrate W and the thermoplastic resin B1a. In addition, it is possible to adjust the contact area of the resin material B1 in contact with the processed surface Wa of the substrate W, that is, the resin material B1 can be placed in the radial direction of the substrate W with respect to the processed surface Wa of the substrate W. It moves up and adjusts the contact area between resin material B1 and the to-be-processed surface Wa of board|substrate W. Thereby, the coating width (the width in the radial direction of the substrate W) of the thermoplastic resin B1a applied on the processed surface Wa of the substrate W can be adjusted. As described above, according to the first embodiment, the resin material B1, which is a thermoplastic resin in a hardened state, is brought into contact with the outer peripheral end portion A1 of the substrate W, for example, the outer peripheral region A1a of the substrate W. The substrate W heated by the substrate heating unit 40 is softened by the heat of the substrate W, and the softened thermoplastic resin B1a is supplied to the outer peripheral area A1a and the outer peripheral surface A1b of the substrate W on the stage 30. The outer peripheral region A1a and the outer peripheral surface A1b of the substrate W are covered with the softened thermoplastic resin B1a. After that, the thermoplastic resin B1a in the softened state is cured, and the outer peripheral region A1a and the outer peripheral surface A1b of the substrate W are covered with the thermoplastic resin B1a in the cured state. Thereby, in the etching process, the outer peripheral surface A1b of the substrate W is protected by the thermoplastic resin B1a in a hardened state, and the erosion of the outer peripheral surface A1b of the substrate W by the etching solution is suppressed, so that the substrate W can be Reduction in size is suppressed. (Another example of resin coating) The second example and the third example will be described as another example of resin coating with the example of resin coating by the supply head 61 described above as the first example. As a second example, as shown in FIG. 14 , the supply head 61 brings the resin material B1 into contact with the outer peripheral surface A1b of the substrate W on the stage 30 . The substrate W on the stage 30 is heated by the substrate heating unit 40, and the temperature of the substrate W is, for example, 150° C. or higher. Therefore, the front end portion (the right end portion in FIG. 14 ) of the resin material B1 in contact with the outer peripheral surface A1b of the substrate W on the stage 30 is softened. The thermoplastic resin at the front end portion of the softened resin material B1 is sequentially attached along the outer peripheral surface A1b of the substrate W in response to the rotation (one rotation) of the table 30 . Thereby, as shown in FIG. 15, the thermoplastic resin B1a in a softened state is applied to the whole (full surface) of the outer peripheral surface A1b of the substrate W, and the outer peripheral surface A1b of the substrate W is in a softened state. Covered with thermoplastic resin B1a. When the thermoplastic resin B1a is applied to the entire (entire surface) of the outer peripheral surface A1b of the substrate W, the heating by the substrate heating section 40 is stopped, and the temperature of the substrate W becomes, for example, lower than 150° C. As a result, the thermoplastic resin B1a in the softened state is hardened. In addition, the stop of the heating by the board|substrate heating part 40 may be comprised so that it may be performed after the resin material B1 is separated from the board|substrate W. As a third example, the supply head 61 brings the resin material B1 into contact with the outer peripheral region A1a of the substrate W on the stage 30 . The diameter of the resin material B1 (the width in the radial direction of the substrate W) is narrower than the width of the outer peripheral region A1a of the substrate W (the width in the radial direction of the substrate W) compared to the first example. The substrate W on the stage 30 is heated by the substrate heating unit 40, and the temperature of the substrate W is, for example, 150° C. or higher. Therefore, the front end portion of the resin material B1 which is in contact with the outer peripheral region A1a of the substrate W on the stage 30 is softened. As shown in FIG. 16 , the thermoplastic resin at the front end portion of the softened resin material B1 is wetted and spread so as to cover the outer peripheral area A1a of the substrate W, and is in response to the rotation of the table 30 (1 turn). rotation) to sequentially attach along the outer peripheral area A1a of the substrate W on the stage 30 . Thus, the entire outer peripheral region A1a of the substrate W is coated with the softened thermoplastic resin B1a, and the outer peripheral region A1a of the substrate W is covered with the softened thermoplastic resin B1a. When the thermoplastic resin B1a is applied to the entire outer peripheral area A1a of the substrate W, the heating by the substrate heating section 40 is stopped, and the temperature of the substrate W becomes, for example, lower than 150°C. As a result, The thermoplastic resin B1a in the softened state is hardened. In addition, the stop of the heating by the board|substrate heating part 40 may be comprised so that it may be performed after the resin material B1 is separated from the board|substrate W. In the above-mentioned second and third examples, as in the above-mentioned first example, the reduction in the size of the substrate can be suppressed. In addition, in the third example, the entire surface of the outer peripheral surface A1b of the substrate W is not covered by the thermoplastic resin B1a in the hardened state, but the entire surface of the outer peripheral region A1a of the substrate W is covered by the thermoplastic resin B1a in the hardened state (refer to Fig. 16). In the etching process, the etchant supplied to the vicinity of the center of the surface Wa of the substrate W that is rotating spreads to the surface Wa of the substrate W by centrifugal force caused by the rotation of the substrate W Entire. The expanded etchant scatters to the outside of the substrate W due to the centrifugal force caused by the rotation of the substrate W. In the thermoplastic resin B1a, the scattering direction of the etching solution is deviated upward with respect to the horizontal plane. Therefore, the inflow of the etchant to the outer peripheral surface A1b of the substrate W is suppressed. Thereby, as in the above-mentioned first example, the reduction of the size of the substrate can be suppressed. The third example is preferably used when the outer peripheral surface A1b or the lower surface of the substrate W is coated with SiN or SiO 2 . However, preferably, in order to surely protect the outer peripheral surface A1b of the substrate W from being corroded by the etchant, the entire surface of the outer peripheral surface A1b is completely covered with the thermoplastic resin B1a. Moreover, it is good also as a structure which performs both the 2nd example and the 3rd example with respect to one board|substrate W. <Other Embodiments> In the foregoing description, although the thermoplastic resin in a softened state is applied to the front end portion of the resin material B1 held by the supply head 61 and the thermoplastic resin in a softened state on the substrate W when the thermoplastic resin B1a in the hardened state is peeled off. A part of B1a is in contact, and in this state, the thermoplastic resin B1a in the softened state on the substrate W is cured, and the front end part of the resin material B1 is fixed to a part of the thermoplastic resin B1a on the substrate W. An example is given, but the system is not limited to this. For example, as shown in FIG. 17 , a heating element 61 a may be provided at the supply head 61 , and the front end portion of the resin material B1 may be softened by the heating element 61 a and the thermoplasticity of the hardened state on the substrate W may be improved. A part of the resin B1a comes into contact, and in this state, the front end part of the resin material B1 in the softened state is hardened, and the front end part of the resin material B1 is fixed to a part of the thermoplastic resin B1a on the substrate W. Moreover, the heat generating body 61a is provided in the front end surface of the supply head 61, and functions as a resin heating part which softens a part of resin material B1 by heat generation. As this heating element 61a, a heating wire such as a nickel-chromium wire is used, for example. The heating element 61 a is electrically connected to the control unit 90 , and its drive is controlled by the control unit 90 . In addition, the supply head 61 is supported by the rotation mechanism 62e via a spring (not shown), and this point is the same as that of the embodiment described using FIG. 1 . Also, in the aforementioned coating process, as shown in FIG. 17, the resin material B1 is gradually reduced, and the vertical separation distance between the front end face of the resin material B1 (the lower part in FIG. 17) and the heating element 61a is gradually changed Although it is short, the heating element 61a is not exposed from the front end surface of the resin material B1 even after the coating is completed, and exists at a position close to the front end surface (see the right diagram of FIG. 17 ). That is, the resin material B1 is formed so as to exist at a position close to the front end surface without being exposed from the front end surface of the resin material B1 even after the coating is completed. In addition, in the foregoing description, the heating element 61a or 82 is exemplified for the case where a heating wire such as a nickel-chromium wire is used, but it is not limited to this. For the use of hot plate or sheath heater, lamp heater, ceramic heater, quartz tube heater, etc. In addition, in the above description, when peeling off the thermoplastic resin B1a in the hardened state, the supply head 61 is moved in one direction while rotating to peel off the thermoplastic resin B1a in the hardened state from the substrate W. The case is exemplified, but it is not limited to this. For example, the thermoplastic resin B1a in a cured state may be moved from the substrate W in one direction without rotating the supply head 61. Alternatively, it may be configured to peel off the thermoplastic resin B1a in a hardened state from the substrate W by rotating the supply head 61 without moving the supply head 61 in one direction. In addition, in the above description, the front end portion of the resin material B1 held by the supply head 61 is fixed to the thermoplastic resin B1a on the substrate W when the thermoplastic resin B1a in the hardened state is peeled off. The case where the thermoplastic resin B1a in the hardened state is held is exemplified, but the present invention is not limited to this. For example, a peeling hand for peeling may be provided instead of the supply head 61 . As the peeling hand, a forceps-like, forceps-like, needle-like hand, or a suction hand can be used. The pincer-like or tweezer-like hand is used to pinch and hold a part of the thermoplastic resin B1a in the hardened state. The needle-shaped hand pierces and holds a part of the thermoplastic resin B1a in a hardened state. The attracting hand attracts and holds a part of the thermoplastic resin B1a in a hardened state. In addition, in the above description, although it is for cleaning the thermoplastic resin B1a in the hardened state of the resin material B1 and its surroundings, the cleaning liquid is discharged from the nozzle 71 of the resin cleaning unit 70 and cleaning is performed. The case of , is exemplified, but it is not limited to this. For example, a cleaning solution may be stored in the cleaning tank 73 in advance, and the resin material B1 may be immersed in the cleaning tank 73 . It is also possible to configure the supply head 61 to be rotated by the rotation mechanism 62e in the immersed state. In the above description, although the table 30 for sucking and holding the substrate W was exemplified, the present invention is not limited to this. And as a holding table. In this case, the stage is provided with a plurality of holding members, and the substrate W is sandwiched and held in a horizontal state by these holding members. The respective holding members are interlocked with each other, and are brought into contact with the outer peripheral surface A1b of the substrate W from the horizontal direction, and the substrate W is sandwiched therebetween. As the holding member, for example, a holding member including a pin and a rotating plate supporting the pin is used. In addition, in the above description, although the thermoplastic resin B1a is applied to the substrate W, the thermoplastic resin B1a is supplied to the entire outer peripheral area A1a and the outer peripheral surface A1b of the substrate W by the supply head 61. , but it is not limited to this, for example, depending on the conditions such as the viscosity of the thermoplastic resin B1a in the softened state or the product specifications (as an example, the required quality), it can also constitute To supply not for the whole but in part. In addition, in the foregoing description, the case where the etching process is performed by a different individual substrate processing apparatus was exemplified, but it is not limited to this, for example, it may be configured as A supply nozzle and a cup are provided in the processing chamber 20 , and the etching processing on the processing surface Wa of the substrate W is performed by the substrate processing apparatus 10 described above. The supply nozzle supplies the etching solution to the surface Wa of the substrate W on the stage 30 to be processed. The cup is formed, for example, in a cylindrical shape with an open top, and accommodates the table 30 , and receives the etchant scattered from the processed surface Wa of the substrate W on the table 30 on the inner peripheral surface. In addition, the system may be configured to sequentially supply other processing liquids such as cleaning liquid and ultrapure water in addition to the etching liquid. In addition, in the foregoing description, the case where one side (upper surface) of the substrate W is processed by the etching solution is exemplified, but it is not limited to this, for example, it is also possible to It is configured to process both sides (upper surface and lower surface) of the substrate W. In addition, when the substrate processing apparatus 10 described above is used to process both sides of the substrate W, a supply nozzle for supplying the processing liquid to the upper surface of the substrate W and a supply nozzle for supplying the processing liquid to the lower surface of the substrate W are provided. . In addition, in the foregoing description, the supply head 61 is used both as a supply head for applying the thermoplastic resin B1a to the substrate W and a supply head for applying the thermoplastic resin B1a applied to the substrate W from the substrate The case of the supply head to be peeled off has been exemplified, but it may be provided separately. In addition, in the foregoing description, the case where the supply head 61 is moved to the standby position at the timing when the contact start point of the resin material B1 on the substrate W is made one turn around has been exemplified. However, the movement sequence to the standby position may be configured as a time point after the above-mentioned contact start point has been moved around for two or more turns. In this case, the supply head 61 may be shifted in the radial direction of the substrate W every time the coil is wound. In the above description, the case where the table 30 is rotated relative to the outer peripheral end portion A1 of the substrate W on the table 30 to relatively move the supply head 61 has been exemplified. In the supply of B1a, it is only necessary to relatively move the substrate W on the stage 30 and the supply head 61 . For example, the table 30 may not be rotated, but the supply head 61 may be moved relative to the outer peripheral end portion A1 of the substrate W on the table 30 . In addition, as the moving mechanism for relatively moving the substrate W and the supply head 61, in addition to the table rotation mechanism 50 for rotating the table 30, for example, a ring such as a circular ring or a rectangular ring may also be used. Or a moving mechanism that moves along a straight line (for example, a guide member that supports the supply head 61 and can slide in a curved or linear shape, and a motor that is a drive source for the slide movement) Wait). Although several embodiments of the present invention have been described above, these embodiments are presented as examples only, and are not intended to limit the scope of the invention. These novel embodiments can be implemented in other various forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are also included in the scope and gist of the invention, and are also included in the inventions described in the claims and their equivalents.