TWI752491B - Quantum random number generator - Google Patents

Abstract

A quantum random number generating device, comprising a substrate, a photon generating structure, a photoelectric conversion structure, and a light conducting structure formed on the substrate by a compatible process, the substrate is selected from silicon-based materials, and the photon generating structure is received When driving a voltage, the photons emitted outward are generated, and the photoelectric conversion structure converts the photons into electric signals output when receiving the photons. The photoconductive structure guides the photons to the photoelectric conversion structure by using silicon-based materials. The formed substrate is combined with a complementary metal oxide semiconductor manufacturing process to simultaneously apply the photon generating structure, the photoelectric conversion structure, and the light conducting structure, thereby reducing the complexity of the overall packaging process of the device.

Description

Quantum random number generator

The present invention relates to an integrated circuit of a complementary metal oxide semiconductor process, in particular to a quantum random number generating device for generating random numbers.

An existing quantum random number generator (US Patent No. US 9747077 B2) includes a light source 1, a photon detector 2, and a random number generator 3, the light source 1 randomly emits photons, the photons The detector 2 receives the photons emitted by the light source 1 and randomly converts the received photons into electrons to generate a corresponding voltage signal, and then undergoes gain amplification and analog digital signal encoding. Finally, the quantum random number generator 3 The corresponding random number is generated by receiving the signal output by the photon detector 2 .

Although the above-mentioned quantum random number generating device can generate random numbers during operation, its disadvantage is that the light source 1 is a light-emitting diode, and its composition material is a III-V group compound, and the photon detector 2 is a complementary gold Oxygen semiconductor process (Complemetary Metal-Oxide Semiconductor, CMOS) is formed, and the two cannot be manufactured in the same process based on the relationship of the applied materials, and only individual components can be produced and then packaged and integrated. In addition, when the system package integrates the light source 1 and the photon detector 2 into a single device, a reflective glass must be added to guide the photons generated by the light source 1 into the photon detector 2, which will further increase the complexity of the system package. Spend.

Therefore, the purpose of the present invention is to provide a quantum random number generator whose device structure can be integrated in the same manufacturing process to reduce the packaging complexity.

Therefore, a quantum random number generating device of the present invention includes a substrate, a photon generating structure, a photoelectric converting structure, and a light conducting structure.

The substrate is selected from silicon-based materials.

The photon generating structure is fabricated on the substrate, and generates photons emitted outward by electroluminescence effect when receiving a driving voltage.

The photoelectric conversion structure is fabricated on the substrate in a process compatible with forming the photon generating structure, and the photoelectric conversion structure is used for converting photons into electrical signals outputted by photoelectric effect when receiving photons.

The light conducting structure is fabricated on the substrate in a process compatible with the photon generating structure, and is used for guiding the photons emitted from the photon generating structure to the photoelectric conversion structure.

The effect of the present invention is to provide a quantum random number generating device which uses a silicon-based material as a substrate and can fabricate a photon generating structure, a photoelectric conversion structure, and a light conducting structure on the substrate by a complementary metal oxide semiconductor process. The mature complementary metal oxide semiconductor process integrates various components on a single substrate, thereby improving the yield of component manufacturing and reducing the complexity of subsequent device system packaging.

Referring to FIG. 1 , an embodiment of the quantum random number generating device of the present invention includes a substrate 2 , a photon generating structure 3 , a photoelectric conversion structure 4 , and a light conducting structure 5 .

The substrate 2 is composed of a silicon-based material. In this example, the substrate 2 is a p-type semiconductor silicon substrate composed of silicon-doped III-A group elements.

The photon generating structure 3 is fabricated on the substrate 2 by a complementary metal-oxide-semiconductor (CMOS: Complementary Metal-Oxide-Semiconductor) process, and emits outwardly through an electroluminescence effect (EL: Electroluminescence) when receiving a driving voltage photons; in this embodiment, the photon generating structure 3 is a forward bias LED, comprising an n ⁺ type doped layer 31 doped with a group VA element, a doping ^{The p +} type doped layer 32 made of group III-A elements, a part of the n-well layer 33 ^{between the n +} type doped layer 31 and the p ^{+ type doped layer 32 ,} and two electrodes 34 respectively disposed on the n ⁺ type doped layer 31 and the p ⁺ type doped layer 32 for receiving the driving voltage; when the driving voltage is provided from the electrodes 34, the n ⁺ type doped layer 31 , The p ⁺ type doped layer 32 cooperates with the n type well layer 33 to generate photons emitted outward by electroluminescence effect.

The photoelectric conversion structure 4 is used to convert the photons into electrical signals output by the photoelectric effect when receiving photons; in this embodiment, the photoelectric conversion structure 4 includes a doped VA group element. An n ⁺ type doped layer 41 , a ^{p + type doped layer 42 spaced from the n +} type doped layer 41 and doped with group III-A elements, and respectively disposed on the n ⁺ type doped layer 41 And the p ⁺ type doped layer 42 is used to receive the two electrodes 43 of the driving voltage, in particular, the n ⁺ type doped layer 41 and the p ⁺ type doped layer 42 of the photoelectric conversion structure 4 are generated with the photon The n ⁺ type doped layer 31 and the p ⁺ type doped layer 32 of structure 3 are synchronously fabricated on the substrate 2 by a compatible CMOS process.

The light conducting structure 5 is used for reflecting light, and includes a first dielectric layer 51 formed on the substrate, a first reflective layer 52 formed on the first dielectric layer 51 , and a first reflective layer 52 formed on the first dielectric layer 52 . the second dielectric layer 53, and a second reflective layer 54 formed on the second dielectric layer 53. The cooperation of the two reflective layers 54 enables photons to be reflected by the first reflective layer 52 and the second reflective layer 54 and continuously transmitted; similar to the fabrication process of the photon generation structure 3 and the photoelectric conversion structure 4, the light conduction The structure 5 is also fabricated on the substrate 2 synchronously when the photon generating structure 3 and the photoelectric conversion structure 4 are fabricated by a complementary metal oxide semiconductor process. In this embodiment, the first dielectric layer 51 includes silicon oxynitride (SiON), borophosphosilicate glass (BPSG: Borophosphosilicate glass), and plasma enhanced tetraethoxysilane (PE-TEOS: Plasma), respectively. -enhanced Tetraethoxysilane) is a three-film body formed by material deposition, and the second dielectric layer 53 includes silicon-rich oxide (SRO: Silicon-rich oxide), high-density plasma fluorosilicate glass (HDPFSG: High density plasma) fluorinated silicate glass) and plasma-enhanced fluorinated silicate glass (PEFSG: Plasma-enhanced fluorinated silicate glass) are three-film bodies formed by material deposition. The first reflective layer 52 and the second reflective layer 54 are selected from, for example, aluminum, Metals such as copper are used as materials.

When a driving voltage is provided from the electrode 34 of the photon generating structure 3 , the n ⁺ type doped layer 31 , the p ⁺ type doped layer 32 and the n type well layer 33 of the photon generating structure 3 are electrically connected to each other. The electroluminescence effect generates photons that are emitted outward; the generated photons propagate forward through the reflection of the first reflective layer 52 and the second reflective layer 54 of the light conducting structure 5 similar to the path in the second dielectric layer 53 to the photoelectric conversion structure 4; when the n ⁺ type doped layer 41 and the p ⁺ type doped layer 42 of the photoelectric conversion structure 4 receive photons, the corresponding electrons are randomly converted by the photoelectric effect, and the self-electrode 43 outputs electrical signals to the outside. Based on the process and number of photons generated by the photon generating structure 3 upon receiving the driving voltage are random, and the process and number of electrons converted by the photoelectric conversion structure 4 upon receiving photons are also random. Therefore, from the photoelectric conversion The electrical signal output by the electrode 43 of the structure 4 is then processed correspondingly, such as related gain amplification, analog-to-digital conversion, etc., to obtain a practical random number.

Referring to FIG. 2 , another embodiment of the quantum random number generating device of the present invention is similar to the above, except that the photon generating structure 6 is a reverse bias LED, including a doping ^{An n +} type doped layer 61 made of hetero VA group elements ^{, a p +} type doped layer 62 made of doped III-A group elements, and respectively disposed on the n ⁺ type doped layer 61 and the p ^{+ type doped layer 61} The type doped layer 62 is used for receiving the two electrodes 63 of the driving voltage. The manufacturing process of the reverse-biased light-emitting diode is similar to that of the forward-biased light-emitting diode, so it will not be repeated here.

To sum up, the quantum random number generating device of the present invention provides a photon generating structure 3 , a photoelectric conversion structure 4 , and a light conducting structure 5 which are fabricated on a single substrate 2 made of a silicon substrate by a complementary metal oxide semiconductor process. One chip, because it is a relatively mature technology to fabricate various doped layers, metal structures, etc. on a silicon substrate by a complementary metal oxide semiconductor process, which is generally referred to as a semiconductor process, so in the The difficulty and complexity of the process can be easily grasped, and the completed single-component chip only needs to be packaged in a one-time system to provide practical applications. Therefore, the difficulties in the production, packaging and integration of the current quantum random number generator are indeed greatly improved. In addition, the quantum random number generating device of the present invention can be integrated with other electronic components in the form of circuits, and can be integrated in the semiconductor manufacturing process in the form of intellectual property rights (IP), so the object of the present invention is indeed achieved.

However, the above are only examples of the present invention, and should not limit the scope of implementation of the present invention. Any simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the contents of the patent specification are still included in the scope of the present invention. within the scope of the invention patent.

2 substrate 3 photon generation structure 31 n ⁺ type doped layer 32 p ⁺ type doped layer 33 n type well layer 34 electrode 4 photoelectric conversion structure 41 n ⁺ type doped layer 42 p ⁺ type doped layer 43 electrode 5 light conduction structure 51 first dielectric layer 52 first reflective layer 53 second dielectric layer 54 second reflective layer 6 photon generation structure 61 n ⁺ type doped layer 62 p ⁺ type doped layer 63 electrode

Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, wherein: FIG. 1 is a schematic diagram illustrating an embodiment of the quantum random number generating apparatus of the present invention; and FIG. 2 is a schematic diagram illustrating a photon generating structure of another embodiment of the quantum random number generating apparatus of the present invention.

2 substrate 3 photon generation structure 31 n ⁺ type doped layer 32 p ⁺ type doped layer 33 n type well layer 34 electrode 4 photoelectric conversion structure 41 n ⁺ type doped layer 42 p ⁺ type doped layer 43 electrode 5 light conduction Structure 51 First Dielectric Layer 52 First Reflective Layer 53 Second Dielectric Layer 54 Second Reflective Layer

Claims (6)

A quantum random number generating device, comprising: a substrate, selected from silicon-based materials; a photon generating structure, fabricated on the substrate, and generating photons emitted outward by electroluminescence effect when receiving a driving voltage; a photoelectric a conversion structure, which is fabricated on the substrate by a process compatible with forming the photon generating structure, the photoelectric conversion structure is used to convert the photons into electrical signals outputted by the photoelectric effect when receiving photons; and a light conducting structure, It is fabricated on the substrate by a process compatible with forming the photon generating structure, and includes a first dielectric layer formed on the substrate and located between the photon generating structure and the photoelectric conversion structure, a first dielectric layer formed on the first a first reflective layer on a dielectric layer, a second dielectric layer covering the first reflective layer and the photon generating structure, and a second reflective layer formed on the second dielectric layer for The photon generating structure excites the photons emitted outward and guides them to the photoelectric conversion structure. The quantum random number generating device according to claim 1, wherein the photon generating structure is a forward-biased light-emitting diode, comprising an n ⁺ type doped layer doped with Group VA elements, a doped III ^{-a p +} type doped layer made of group A elements, an n type well layer with a part of the structure between the n ⁺ type doped layer and the p ^{+ type doped layer, and the n +} type doped layer respectively disposed and the p ⁺ type doped layer is used to receive the two electrodes of the driving voltage. The quantum random number generating device according to claim 1, wherein the photon generating structure is a reverse-biased light-emitting diode, comprising an n ⁺ type doped layer doped with Group VA elements, a doped III ^{A p +} type doped layer formed by a group A element, and two electrodes respectively disposed on the n ⁺ type doped layer and the p ⁺ type doped layer for receiving a driving voltage. The quantum random number generator according to claim 1, wherein the photoelectric conversion structure comprises an n ⁺ type doped layer ^{doped with VA group elements, a spaced apart from the n +} type doped layer and doped with III ^{A p +} type doped layer formed by a group A element, and two electrodes respectively disposed on the n ⁺ type doped layer and the p ⁺ type doped layer for receiving a driving voltage. The quantum random number generator according to claim 1, wherein the first dielectric layer comprises three films formed by deposition of silicon oxynitride compound, borophosphosilicate glass and plasma enhanced tetraethoxysilane respectively. The second dielectric layer includes a three-film body formed by deposition of silicon oxide-rich compound, fluorosilicate glass, and plasma enhanced fluorosilicate glass respectively. The quantum random number generating device according to claim 5, wherein the first reflection layer and the second reflection layer are made of materials selected from metals, respectively.

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