TWI749521B - 具串聯式冷卻室之多流道氣體噴射器 - Google Patents
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Abstract
本發明為一種具串聯式冷卻室之多流道氣體噴射器，包括一噴射殼體內部環設有複數層冷卻室，每一冷卻室之側壁頂部設有至少一溢流開口，以連通相鄰之冷卻室，每一冷卻室內更分別設有複數排氣管，且排氣管之開口外露於噴射殼體外。本發明可令每一排氣管浸泡於冷卻液中，達到整體排氣管控溫的效果，且排氣管突出於串聯式冷卻室之多流道氣體噴射器底部，搭配晶座(susceptor)的內凹結構，能有效掃除晶圓邊緣的粉塵及沉積物，提升產品製造良率。
Description
本發明係有關一種晶圓鍍覆之技術，特別是指一種具串聯式冷卻室之多流道氣體噴射器。
隨著半導體技術的發展，半導體製程技術也變得更加成熟，使得更多半導體組成的電子裝置可被做的更佳精巧，功能變得更多。
半導體技術的製程會經過黃光、蝕刻、擴散再進入到薄膜的生成。半導體晶圓在薄膜沉積製程中，係將晶圓設置在真空反應腔內，以利用氣體噴射器將反應的氣體水平噴射至晶圓上，以利用加熱引起的物理或化學反應，從而在晶圓上沉積薄膜。
在沉積的過程中，為避免對晶圓加熱時，氣體噴射器受高溫的影響，過去會在氣體噴射器的噴氣管外緣設置水冷設備，以降低氣體噴射器的溫度。但這種方式水冷設備僅能包覆到最外層的噴氣管，並無法有效冷卻氣體噴射器內層的噴氣管，造成整體控溫效果不佳。
除此之外，目前的噴射器的設計係令氣源氣體以水平的方式360度環繞噴出，因此在沉積薄膜時易具有氣流死角，如晶圓的側邊上緣為接觸氣體的前端，因此特別容易積生反應物，時間一久容易有粉塵堆積。且此區為薄膜成膜區的氣上游區段，一但有粉塵生成，粉塵就容易隨著氣流吹散到整片晶圓表面，令晶片形成粉塵顆粒缺陷，影響到製程良率。
有鑑於此，本發明遂針對上述習知技術之缺失，提出一種具串聯式冷卻室之多流道氣體噴射器，以有效克服上述之該等問題。
本發明之主要目的在提供一種具串聯式冷卻室之多流道氣體噴射器，其可令每一排氣管浸泡於冷卻液中，以達到整體排氣管控溫的效果。
本發明之另一目的在提供一種具串聯式冷卻室之多流道氣體噴射器，其具有共用氣流通道可作為吹掃流道或清潔蝕刻流道，且該氣流通道突出於串聯式冷卻室之多流道氣體噴射器底部，搭配晶座(susceptor)的內凹結構，能有效掃除晶圓邊緣的粉塵及沉積物，提升產品製造良率。
本發明之再一目的在提供一種具串聯式冷卻室之多流道氣體噴射器，其透過隔板的設置可令冷卻水只往單一方向流動，能避免的冷卻水回流，能大幅提升冷卻的功效。
為達上述之目的，本發明提供一種具串聯式冷卻室之多流道氣體噴射器，包括一噴射殼體內部環設有複數層冷卻室，每一冷卻室之側壁頂部設有至少一溢流開口，以連通相鄰之冷卻室，且每一冷卻室內分別設有複數排氣管，每一排氣管之開口外露於噴射殼體外。
在本實施例中，噴射殼體可為階梯狀噴射殼體，令每一冷卻室之側壁的長度由內往外逐漸增長。
在本實施例中，每一冷卻室底部更設有一氣體引流盤，垂直於複數排氣管之開口，以引流排氣管排出之氣體，且氣體引流盤內具溢流空間，溢流空間連通冷卻室。
在本實施例中，其中每一冷卻室中更設有至少一隔板，以分隔冷卻室。
在本實施例中，複數排氣管包括一共用排氣管設置於噴射殼體中央，且共用排氣管穿出噴射殼體。
在本實施例中，具串聯式冷卻室之氣體噴射器更包括一轉接頭，轉接頭包括一輸入接頭及一分流接頭，輸入接頭上設有複數輸氣管、至少一第一輸液管及至少一第一排液管。分流接頭上則設有複數氣流通道、至少一第二輸液管及至少一第二排液管，複數氣流通道分別連通輸氣管，及連通複數排氣管，以輸入不同氣體至複數排氣管；第二輸液管分別連通第一輸液管及最內層冷卻室，以輸入冷卻液；第二排液管分別連通第一排液管及最外層冷卻室，以排出冷卻液。
在本實施例中，每一氣體引流盤之間更設有一濾網。
底下藉由具體實施例詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。
本發明之具串聯式冷卻室之多流道氣體噴射器，可用以連接薄膜沉積氣體輸出系統，以作為噴頭噴射出不同的氣體，藉此對晶圓進行薄膜沉積，更重要的是，具串聯式冷卻室之多流道氣體噴射器的特殊結構設計，可令每一排氣管浸泡於冷卻液中，以達到整體排氣管控溫的效果。
請參照第一圖至第三圖，具串聯式冷卻室之多流道氣體噴射器1，包括一噴射殼體10連接一轉接頭20。在本實施例中，噴射殼體10為圓形的噴射殼體，當然噴射殼體亦可為方形或三角形噴射殼體，形狀並不予以限制。在本實施例中，噴射殼體10內以同心圓的方式環設有複數層冷卻室12，每一冷卻室12之側壁頂部設有至少一溢流開口120，以連通相鄰之冷卻室12，使冷卻室12內容置的冷卻液可溢流至相鄰的冷卻室12中，達到串聯冷卻室12的目的。噴射殼體10中更設有複數排氣管14分別設置在每一冷卻室12內，且排氣管14之開口係外露於噴射殼體外10；透過上述結構的設置，當冷卻室12內填滿冷卻液時，所有的排氣管14皆能浸泡在冷卻液中，以達到控溫的效果。轉接頭20則係提供具串聯式冷卻室之多流道氣體噴射器1連接薄膜沉積氣體輸出系統(圖中未示)及水冷系統(圖中未示)連接，以提供具串聯式冷卻室之多流道氣體噴射器1噴射沉積的氣體及冷卻液。
請持續參照第一圖至第三圖，以詳細說明噴射殼體10及轉接頭20之結構。在本實施例中，噴射殼體10可為階梯狀噴射殼體，令每一冷卻室12之側壁的長度由外圈往內圈逐漸增長，同理冷卻室12內的排氣管14長度亦根據冷卻室12之側壁逐漸增長。請參照第三圖，每一冷卻室12底部更設有一氣體引流盤122，氣體引流盤122垂直連接冷卻室12設置，氣體引流盤122內具溢流空間124，溢流空間124連通冷卻室12，且每一氣體引流盤122的垂直設置於複數排氣管14之開口下方，由於噴射殼體10呈階梯狀，因此氣體引流盤122會剛好位於排氣管14的下方，以可作為引流排氣管14排出之氣體，使排氣管14噴出的氣體可以水平的方式噴出。請參照第二圖，每一冷卻室12之側壁上更設有至少一隔板16，以將每一冷卻室12分隔成兩塊區域，藉由隔板16能避免熱交換的液體在冷卻室12中任意流動，而干擾冷卻液的流向。
持續參照第一圖至第三圖，以接著敘述噴射殼體10之排氣管14結構，在本實施例中，排氣管14的內徑至少四公厘(mm)，排氣管14可為導熱快速的金屬管體，如銅排氣管等，且排氣管14之管壁的厚度為2.5公厘(mm)至0.5公厘(mm)。由於排氣管14之材質導熱快且厚度薄，使溫度傳導更快，令冷卻室12中的冷卻液能有效冷卻排氣管14，使控溫效果更好。請參照第三圖，在本實施例中，每一氣體引流盤122之間更設有一濾網18，濾網18可為金屬濾網，以阻擋由排氣管14排出之氣體形成氣體壓阻，同時可避免噴出的氣體直接衝出，造成噴氣不均勻問題。在本實施例中，複數排氣管14中包括有一共用排氣管140設置於噴射殼體10中央，共用排氣管14穿出噴射殼體10底部，以作為掃流道與清潔刻蝕(Cleaning Etching)流道的共用通道。
請持續第一圖至第三圖，接著詳細說明轉接頭20之結構，轉接頭20包括一輸入接頭22及一分流接頭24。輸入接頭22上設有複數輸氣管220、至少一第一輸液管222及至少一第一排液管224，複數輸氣管220連接薄膜沉積氣體輸出系統(圖中未示)，第一輸液管222及第一排液管224則連接水冷系統(圖中未示)。分流接頭24連接輸入接頭22設置，分流接頭24上設有複數氣流通道240，每一氣流通道240分別連通輸氣管220，且每一氣流通道240底部更設有複數排氣開口242，複數排氣開口242分別連通噴射殼體10上的排氣管14，以輸入不同氣體至複數排氣管14；分流接頭24上更設有至少一第二輸液管244分別連通第一輸液管222及最內層冷卻室12a，以輸入冷卻液，以及至少一第二
排液管246分別連通第一排液管224及最外層冷卻室12b，以排出冷卻液。
在說明完具串聯式冷卻室之多流道氣體噴射器1，接下來請配合參照第四圖與第五圖，以說明串聯式冷卻室之多流道氣體噴射器1之冷卻室12中冷卻液的溢流狀態，首先冷卻液經由轉接頭20連接水冷系統(圖中未示)之輸入接頭22的第一輸液管222流通至分流接頭24的第二輸液管244後流入最內層冷卻室12a，由於最內層冷卻室12a中具有隔板16阻隔，因此冷卻液一開始僅在最內層冷卻室12a半側流動，直到冷卻液進入連通最內層冷卻室12a的氣體引流盤122a的溢流空間124a時，冷卻液才會經由溢流空間124a溢滿到最內層冷卻室12a的另一半側，最內層冷卻室12a另一半側溢滿後，會透過溢流開口120a溢出至另一層冷卻室12c。同理，因冷卻室12c內亦設有隔板16，冷卻液一開始僅在冷卻室12c半側流動，直到冷卻液進入連通冷卻室12c的氣體引流盤122c的溢流空間124c時，冷卻液才會經由溢流空間124c溢滿到冷卻室12c的另一半側，冷卻室12c另一半側溢滿後，會透過溢流開口120c溢出至下一層冷卻室12d。接下來每一層流動方法皆相同故不重複敘述。
最終當冷卻水溢滿最外層冷卻室12b時，冷卻水則由分流接頭24之第二排液管246，並經由輸入接頭22之第一排液管224流回水冷系統(圖中未示)中，以達到冷卻水循環的效果。當然亦可設置兩組輸輸液管與排液管，以在噴射殼體10內設置兩組以上的串聯式冷卻室，在此並不予以限制。且本實施例透過隔板16的設置可令冷卻水只往單一方向流動，能避免冷卻水回流，能大幅提升冷卻的功效。
接下來請參照第六圖，以說明氣體的排出方式，透過轉接頭20之輸入接頭22的複數輸氣管220連接薄膜沉積氣體輸出系統(圖中未示)，在本實施例中，不同的輸氣管220可供連接薄膜沉積氣體輸出系統中不同的氣體輸出器，以輸出不同的氣體。接著氣體流入分流接頭24的氣流通道240後，再經由氣流通道240上的複數排氣開口242流出至噴射殼體10上的排氣管14。由於氣體引流盤122之間具有濾網18，可阻擋由排氣管14排出之氣體形成氣體壓阻，同時可避免噴出的氣體直接衝出，造成噴氣不均勻問題。除此之外，氣體由排氣管14排出後，會接觸到氣體引流盤122，使排氣管14噴出的氣體可以水平的方式噴出。
複數排氣管14中具有一共用排氣管140的設置，共用氣流通道140可作為吹掃流道或清潔蝕刻流道，共用排氣管140連通薄膜沉積氣體輸出系統(圖中未示)，以導入蝕刻氣體，如氯化氫或氯氣等。由於共用氣流通道140突出於串聯式冷卻室之噴射殼體10及氣體引流盤122的底部，因此當蝕刻氣體排出時，搭配晶座30(susceptor)的晶圓凹座32內凹結構，蝕刻氣體會沿著晶圓凹座32的邊緣上升，令蝕刻氣體的氣流能接觸到晶圓34邊角，能有效掃除晶圓邊緣堆積的粉塵及沉積物。除此之外，共用排氣管140內更可供設有一內套管142，內套管142內的氣體可與內套管142外的氣體分離，避免不同氣體混合，產生化學反應。
綜上所述，本發明可令每一排氣管浸泡於冷卻液中，達到整體排氣管控溫的效果，且透過隔板的設置可令冷卻水只往單一方向流動，能避免的冷卻水回流，以大幅提升冷卻的功效。且本發明排氣管中具有共用氣流通道，可作為吹掃流道或清潔蝕刻流道，且氣流通道突出於串聯式冷卻室之多流道氣體噴射器底部，搭配晶座(susceptor)的內凹結構，能有效掃除晶圓邊緣的粉塵及沉積物，提升產品製造良率。
唯以上所述者，僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍。故即凡依本發明申請範圍所述之特徵及精神所為之均等變化或修飾，均應包括於本發明之申請專利範圍內。
1:具串聯式冷卻室之多流道氣體噴射器
10:噴射殼體
12:冷卻室
12a:最內層冷卻室
12b:最外層冷卻室
12c:冷卻室
12d:冷卻室
120:溢流開口
120a:溢流開口
120c:溢流開口
122:氣體引流盤
122a:氣體引流盤
122c:氣體引流盤
124:溢流空間
124a:溢流空間
124c:溢流空間
14:排氣管
140:共用排氣管
142:內套管
16:隔板
18:濾網
20:轉接頭
22:輸入接頭
220:輸氣管
222:第一輸液管
224:第一排液管
24:分流接頭
240:氣流通道
242:排氣開口
244:第二輸液管
246:第二排液管
30:晶座
32:晶圓凹座
34:晶圓
第一圖係為本發明之立體圖。
第二圖係為本發明之元件分解圖。
第三圖係為本發明之剖面側視圖。
第四圖係為本發明之溢流狀態面示意圖。
第五圖係為本發明溢流狀態之噴射殼體俯面示意圖。
第六圖係為本發明之氣流狀態側面示意圖。
1:具串聯式冷卻室之多流道氣體噴射器
10:噴射殼體
12:冷卻室
12a:最內層冷卻室
12b:最外層冷卻室
120:溢流開口
122:氣體引流盤
14:排氣管
140:共用排氣管
16:隔板
20:轉接頭
22:輸入接頭
220:輸氣管
222:第一輸液管
224:第一排液管
24:分流接頭
240:氣流通道
242:排氣開口
244:第二輸液管
246:第二排液管
Claims (9)
- 一種具串聯式冷卻室之多流道氣體噴射器，包括：一噴射殼體，其內部環設有複數層冷卻室，每一該冷卻室之側壁頂部設有至少一溢流開口，以連通相鄰之冷卻室；以及複數排氣管，設置在每一該冷卻室內，且該排氣管之開口外露於該噴射殼體外；其中每一該冷卻室底部更設有一氣體引流盤，垂直於該等排氣管之開口，以引流該排氣管排出之氣體，且該氣體引流盤內具一溢流空間，該溢流空間連通該冷卻室。
- 如請求項1所述之具串聯式冷卻室之多流道氣體噴射器，其中該噴射殼體為階梯狀噴射殼體，令每一該冷卻室之該側壁的長度由外往內逐漸增長。
- 如請求項1所述之具串聯式冷卻室之多流道氣體噴射器，其中每一該冷卻室中更設有至少一隔板，以分隔該冷卻室。
- 如請求項1所述之具串聯式冷卻室之多流道氣體噴射器，其中該等排氣管包括一共用排氣管，設置於該噴射殼體中央，且該共用排氣管穿出該噴射殼體底部。
- 如請求項4所述之具串聯式冷卻室之多流道氣體噴射器，其中該共用排氣管內更設有一內套管。
- 如請求項1所述之具串聯式冷卻室之多流道氣體噴射器，更包括一轉接頭，其包括：一輸入接頭，其上設有複數輸氣管、至少一第一輸液管及至少一第一排液管；及 一分流接頭，其上設有複數氣流通道、至少一第二輸液管及至少一第二排液管，該等氣流通道分別連通該等輸氣管，及分別連通該等排氣管，以輸入不同氣體至該等排氣管；該第二輸液管分別連通該第一輸液管及最內層該冷卻室，以輸入冷卻液；該第二排液管分別連通該第一排液管及最外層該冷卻室，以排出該冷卻液。
- 如請求項6所述之具串聯式冷卻室之多流道氣體噴射器，其中該等氣流通道上更設有複數排氣開口，該等排氣開口分別連通該等排氣管。
- 如請求項1所述之具串聯式冷卻室之多流道氣體噴射器，其中該排氣管內徑至少四公厘(mm)，該排氣管的管壁可為2.5公厘(mm)至0.5公厘(mm)。
- 如請求項1所述之具串聯式冷卻室之多流道氣體噴射器，其中每一該氣體引流盤之間更設有一濾網。
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| CN202022411353.4U CN215560652U (zh) | 2020-04-13 | 2020-10-27 | 具串联式冷却室的多流道气体喷射器 |
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| CN202022423997.5U CN214327877U (zh) | 2020-04-13 | 2020-10-27 | 具有双套管的气体喷射器 |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200729304A (en) * | 2006-01-20 | 2007-08-01 | Applied Materials Inc | Methods for in-situ generation of reactive etch and growth specie in film formation processes |
| TWM600306U (zh) * | 2020-04-13 | 2020-08-21 | 寬輔科技股份有限公司 | 具串聯式冷卻室之多流道氣體噴射器 |
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| Publication number | Publication date |
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| CN112410761A (zh) | 2021-02-26 |
| CN215560652U (zh) | 2022-01-18 |
| CN214106268U (zh) | 2021-09-03 |
| CN214218854U (zh) | 2021-09-17 |
| CN112410761B (zh) | 2024-11-15 |
| TW202138610A (zh) | 2021-10-16 |
| CN214327877U (zh) | 2021-10-01 |
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