TWI749595B - Sic structure using cvd method - Google Patents

Abstract

The present invention relates to a SiC structure formed by a CVD method. The SiC structure formed by a CVD method according to an aspect of the present invention relates to a SiC structure used for exposure to plasma inside a chamber, when perpendicular to the maximum When the direction of the surface exposed to the plasma to the limit is defined as the first direction, and the direction horizontal to the surface exposed to the plasma to the maximum is defined as the second direction, the length including the first direction is greater than the second direction. Direction of the length of the grain structure.

Description

SIC structure formed by CVD method

The present invention relates to a semiconductor manufacturing element including SiC material, and more specifically, to a structure that can be used in a dry etching device including SiC material.

Among the parts used in semiconductor manufacturing equipment, single crystal silicon and columnar crystal silicon are used for parts exposed to plasma. For products with a diameter of about 500mm, single crystal silicon is used; for products above 600mm, because there is no single crystal silicon, columnar crystal silicon with large growth grains is used. At this time, its purity is about 99.9999% (6N).

In recent years, with the development of semiconductor manufacturing processes, the number of layers that need to be deposited has increased rapidly, and high power is used to etch many layers at once and make the etched shape vertical. Due to the high power used in this method, the silicon used in the past has a problem of rapid etching. In addition, since the time required for the consumption of silicon products is reduced, cleaning problems often occur inside the equipment, and it takes a lot of time to replace worn parts. This will directly affect production loss.

In order to solve such problems, a method of using a material with excellent anti-plasma properties (such as SiC) as an anti-plasma material has been introduced.

In the past, the use of excellent anti-plasma materials in oxide, nitride, and carbide materials was promoted to increase the service life of parts. However, particles were generated by the reaction between the parts and the process gas during the etching process. It becomes a problem, and most materials cannot be applied. The SiC prepared by the CVD method does not have the above-mentioned particle problem. Because it can produce 6N ultra-high purity materials, it has begun to replace the existing silicon parts.

In recent years, the research on the properties of CVD-SiC materials has continued to deepen, and people are committed to changing the design of the surface suitable for plasma according to the orientation of the crystal grains, thereby improving the plasma resistance of the product.

[The problem to be solved by the invention]

The present invention is based on the inventor's recognition of the above-mentioned problems and the conclusion drawn from research on the preparation of SiC structures with unique properties.

The purpose of the present invention is to provide a structure that introduces a new concept to the preparation method of the SiC structure that has only been busy introducing the existing SiC material before, so that the crystal grains are arranged in a specific direction to improve the plasma resistance performance, and, Even if a part of the structure is etched by plasma, no particles are generated during the etching process, and uniform etching occurs on the surface to be etched.

In addition, the purpose of the present invention is to provide a SiC structure optimized for etching equipment, which controls the growth of crystal planes in XRD analysis and adjusts physical properties according to the arrangement direction, so that it has better corrosion resistance. [Technical means to solve the problem]

The SiC structure formed by the CVD method according to an aspect of the present invention relates to the SiC structure used for exposure to plasma inside the chamber, when the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first In one direction, when the direction horizontal to the surface exposed to the plasma to the maximum is defined as the second direction, it includes a crystal grain structure whose length in the first direction is greater than that in the second direction.

According to an embodiment, the crystal grain may be configured to have a maximum length in a direction of -45° to +45° based on the first direction.

According to an embodiment, the length of the crystal grain in the first direction/the length of the crystal grain in the second direction (aspect ratio) may be 1.2-20.

According to an embodiment, the SiC structure may include: a first surface that is exposed to the plasma to the utmost extent and expands in a direction perpendicular to the first direction; and a second surface that is perpendicular to the first direction One side, and expand in a direction perpendicular to the second direction.

According to an embodiment, the average intensity in the first direction may be 133Mpa to 200Mpa, and the average intensity in the second direction may be 225Mpa to 260Mpa.

According to an embodiment, the average intensity in the first direction/the average intensity in the second direction may be 0.55 to 0.9.

According to an embodiment, the resistivity in the first direction may be 3.0*10 ^-3 Ωcm to 25 Ωcm, and the resistivity in the second direction may be 1.4*10 ^-3 Ωcm to 40 Ωcm.

According to an embodiment, the value of the resistivity in the first direction/the resistivity in the second direction may be 0.05 to 3.3.

According to an embodiment, the resistivity in the first direction may be 10 Ωcm to 20 Ωcm, and the resistivity in the second direction may be 21 Ωcm to 40 Ωcm.

According to an embodiment, the value of the resistivity in the first direction/the resistivity in the second direction may be 0.25 to 0.95.

According to an embodiment, the resistivity in the first direction may be 0.8 Ωcm to 3.0 Ωcm, and the resistivity in the second direction may be 2.5 Ωcm to 25 Ωcm.

According to an embodiment, the value of the resistivity in the first direction/the resistivity in the second direction may be 0.04 to 0.99.

According to an embodiment, the resistivity in the first direction may be 1.8 Ωcm to 3.0 Ωcm, and the resistivity in the second direction may be 0.8 Ωcm to 1.7 Ωcm.

According to an embodiment, the value of the resistivity in the first direction/the resistivity in the second direction may be 1.15 to 3.2.

According to one embodiment, the resistivity of the first direction may be 3.0 * 10 ^-3 Ωcm to 5.0 * 10 ^-3 Ωcm, a resistivity in the second direction may be 1.4 * 10 ^-3 Ωcm to 3.0 * 10 ^{- 3} Ωcm.

According to an embodiment, the value of the resistivity in the first direction/the resistivity in the second direction may be 1.1 to 3.3.

According to an embodiment, regardless of the direction, the hardness of the SiC structure may be 2800 kg _f /mm ² to 3300 kg _f /mm ² .

According to an embodiment, the value of the hardness in the first direction/the hardness in the second direction may be 0.85 to 1.15.

According to an embodiment, for the peak intensities of the crystal plane directions in the first direction and the second direction analyzed by XRD, the values of [(200+220+311)]/(111) can be respectively: towards the first direction 0.7 to 2.1, 0.4 to 0.75 in the second direction.

According to an embodiment, for the peak intensity of the crystal plane direction in the first direction and the second direction analyzed by XRD, the value of the first direction of the value of [(200+220+311)]/(111)/the first direction The value of the two directions can be 1.0 to 4.4.

According to an embodiment, for the peak intensity of the first direction and the second direction of the XRD analysis, the peak intensity of the (111) crystal plane direction may be 3200 to 10000 in the first direction, and may be 3200 to 10000 in the second direction. 10500 to 17500.

According to an embodiment, for the peak intensity in the first direction and the second direction analyzed by XRD, the peak intensity in the (111) crystal plane direction in the first direction/the crystal plane in the second direction (111) The value of the peak intensity in the plane direction may be 0.2 to 0.95.

According to an embodiment, the coefficient of thermal expansion in the first direction may be 4.0*10 ^-6 /°C to 4.6*10 ^-6 /°C, and the coefficient of thermal expansion in the second direction may be 4.7*10 ^-6 /°C to 5.4 *10 ^-6 /℃.

According to an embodiment, the value of the coefficient of thermal expansion in the first direction/the coefficient of thermal expansion in the second direction may be less than 1.0.

According to an embodiment, the value of the coefficient of thermal expansion in the first direction/the coefficient of thermal expansion in the second direction may be greater than 0.7 and less than 1.0.

According to an embodiment, the thermal conductivity in the first direction may be 215 W/mk to 260 W/mk, and the thermal conductivity in the second direction may be 280 W/mk to 350 W/mk.

According to an embodiment, the value of the thermal conductivity in the first direction/the thermal conductivity in the second direction may be less than 1.0.

According to an embodiment, the value of the thermal conductivity in the first direction/the thermal conductivity in the second direction may be 0.65 to less than 1.0.

According to an embodiment, the SiC structure includes: a first surface that is exposed to the plasma to the utmost extent and expands in a direction perpendicular to the first direction; and a second surface that is perpendicular to the first direction On one side, and expand in a direction perpendicular to the second direction, at least a part of the first side of the SiC structure may be in contact with the support portion.

According to an embodiment, the SiC structure may be one of an edge ring, a base, and a shower head.

According to an embodiment, the SiC structure includes: a first surface that is exposed to the plasma to the utmost extent and expands in a direction perpendicular to the first direction; and a second surface that is perpendicular to the first direction One surface is expanded in a direction perpendicular to the second direction, and the sum of the areas of the first surface may be greater than the sum of the areas of the second surface. [Effect of Invention]

According to the present invention, it is possible to prepare a SiC structure with improved plasma resistance and a longer replacement cycle. In addition, the SiC structure proposed in the present invention has a lower etching rate due to plasma, which can reduce the incidence of cracks or holes, and can reduce the scattering rate of materials that contaminate the chamber and cause defective products.

According to an embodiment of the present invention, the crystal grains of the SiC structure are arranged in a specific direction, so that even if a part of the structure is etched by the plasma, the uniform resistivity can be maintained, and the charge accumulation phenomenon caused by resistance can be prevented , So as to improve the adhesion of polymers and other dissimilar materials in the etching process.

In addition, it is possible to provide a SiC structure in which the resistivity in a specific direction is controlled at an appropriate level according to the purpose, and it is also possible to provide a SiC structure that improves corrosion resistance through crystal plane control in XRD analysis and ensures etching Uniformity.

In addition, according to an embodiment of the present invention, due to the lower resistivity value in a specific direction, the charge accumulation phenomenon on the plasma exposed surface of the SiC structure can be prevented, and by improving the charging phenomenon of the SiC structure, It can improve the adhesion of polymers and other dissimilar materials in the etching process.

In addition, according to an embodiment of the present invention, by controlling the value of the thermal conductivity and the coefficient of thermal expansion in a specific direction, the effective heat transfer efficiency in a specific direction in the chamber can be improved, and the etching process performed under the condition of increasing temperature In, the plasma etching depth can also be adjusted precisely.

Through the content proposed in the present invention, the SiC structure proposed in the present invention can be used to design the components of a semiconductor manufacturing device. The replacement cycle of the components will increase, and the quality of the semiconductor components manufactured thereby will also be improved. , Can manufacture high-quality semiconductor devices.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

Various changes can be made to the following embodiments. The scope of rights in this case is not limited or restricted by the following embodiments, and all changes to all the embodiments, their equivalents and even their substitutes are included in the scope of patent application.

The terms used in the embodiments are only used to describe specific embodiments, and are not used to limit the embodiments. Unless otherwise specified in the content, the singular expression includes the plural meaning. In this specification, terms such as "include" or "have" are used to express the presence of the features, numbers, steps, operations, constituent elements, accessories, or combinations thereof described in the specification, and do not exclude the presence of one or more other features , Numbers, steps, operations, constituent elements, accessories or combinations thereof, or additional functions.

In the absence of other definitions, all terms used here, including technical or scientific terms, have the usual meanings understood by those skilled in the art. Commonly used terms that are the same as dictionary definitions should be understood as meanings consistent with the usual content of related technologies. Unless explicitly mentioned in this case, they cannot be overly idealized or interpreted as formal meanings.

In addition, in the program described with reference to the drawings, regardless of the reference numerals, the same constituent elements are given the same reference numerals, and repetitive descriptions thereof are omitted. In the process of describing the embodiments, when it is judged that the specific description of the related well-known technology will unnecessarily obscure the embodiments, the detailed description thereof is omitted.

In general, the SiC material grown by the CVD method has a cubic structure of β-SiC, and its crystal phase has a zinc blende structure similar to silicon. Therefore, in the crystal structure of silicon, when the crystal orientation is the (111) plane, the number of atoms per unit area is the largest. Therefore, the CVD SiC material can also have the largest number of atoms (coordinate number, 3) in the same (111) plane direction.

The increase in the number of atoms per unit area means that when exposed to plasma in the direction of the surface, the plasma resistance (resistance of the plasma) will relatively increase. Therefore, even in the same material, arranging crystal planes in a direction with a larger number of atoms per unit area is an important principle to improve the quality of anti-plasma materials. For the SiC material grown by the CVD method, the surface of the SiC structure can be designed to have higher resistance to plasma by designing the part with many crystal grains in the (111) direction to be exposed to the plasma. .

In addition, in the SiC material grown by the CVD method, the ion-resistant body performance also affects the orientation and uniformity of the crystal grains. When comparing the formation of large crystal grains and relatively small crystal grains between the crystal grains, the crystal grains are first peeled off or etched in the state where small crystal grains are formed when exposed to plasma, resulting in the appearance of excavation inside the material Form of etching. When exposed to a stronger plasma or exposed to a plasma for a longer period of time, the large crystal grains will also be peeled off. At this time, the etching thickness will increase rapidly. Therefore, the orientation and size distribution of the crystal grains are important factors that affect the etching characteristics of the SiC structure.

In addition, in the SiC structure, designing and processing the physical properties of the SiC structure based on the specific surface that the plasma mainly reaches can become a factor in improving the plasma resistance.

In the present invention, the surface of the SiC structure that is most exposed to the plasma is defined as the first surface 100a of the SiC structure. The direction perpendicular to the first surface that is most exposed to the plasma (the direction in which the plasma approaches the SiC structure) is defined as the first direction. For example, the first direction may belong to the height direction of the chamber and the height direction of the edge ring. At this time, when the product is designed so that the plasma enters the SiC structure from a direction other than the first direction at most, once the plasma arrives, rapid etching caused by the shedding of small particles will occur, and the Uneven etching occurs. In addition, in severe cases, even large crystal grains may be peeled off, causing problems caused by scattered particles.

As mentioned above, when using such materials to make parts, which surface and which direction is designed may be an important issue for enhancing the anti-plasma performance of the material.

The present invention proposes a SiC structure such as an edge ring, a shower head, etc., which has an excellent plasma resistance and causes a longer replacement cycle, thereby improving productivity and stably producing high-quality semiconductor manufacturing parts. When the SiC structure proposed in the present invention is applied to a dry etching equipment exposed to an environment of plasma falling from the upper part, the amount of scattering can be reduced by a small amount of etching. In addition, the SiC structure of the present invention can produce high-quality semiconductor manufacturing parts, while reducing production costs (due to a longer replacement cycle than traditional structures).

Fig. 1a is a cross-sectional view schematically showing the structure of a SiC structure according to an embodiment of the present invention installed inside a common plasma chamber; Fig. 1b is a cross-sectional view showing an example of a SiC structure according to an embodiment of the present invention A cross-sectional view of the structure of the edge ring of the wafer mounted in another common plasma chamber; FIG. 1c is a diagram showing an example of the SiC structure according to an embodiment of the present invention. The edge ring is defined as the first surface 100a and A schematic diagram of the second surface 100b.

The plasma chamber using the SiC structure proposed in the present invention can be confirmed by FIG. 1a, and the first direction and the second direction of the SiC structure proposed as an example can be confirmed by FIG. 1b and FIG. 1c. How are the first and second sides defined.

Specifically, the edge ring of one of the SiC structures proposed in the present invention can be implemented in various forms according to the mounting position of the wafer, and can basically have a flat ring structure or a cylindrical structure as shown in FIG. 1c, and It is installed in the form of Figure 1a and Figure 1b. However, since the width of the edge ring is generally greater than its height, it can be referred to as a ring structure preferentially.

At this time, the SiC structure can be prepared so that there is a difference between the characteristics measured in the first direction of the edge ring and the characteristics measured in the second direction, or the ratio thereof can be controlled at an appropriate level.

This is because the plasma does not etch the SiC structure uniformly in every direction, so it only needs to have high-level physical properties in the direction where a large amount of plasma approaches and enters, and has a relatively high level of physical properties in the direction where a relatively small amount of plasma approaches. Low physical properties are sufficient. In addition, this is because the components can be designed to have the following physical properties: to effectively achieve excellent structural performance, thermal performance, and electrical performance in the plasma chamber.

In the development of materials, it takes more effort and cost to develop to the required physical property level than digital confirmation. In the manufacturing process, in order to achieve a high level of physical properties (strength, hardness, grain size, thermal conductivity, thermal expansion coefficient, etc.) in each direction, it is of course possible to produce excellent SiC structures, but in order to design a SiC The structure to meet these physical property levels requires extremely high cost and technology.

The present invention relates to the research results of the deposition method of SiC material. When installed in a dry etching device, it can maintain excellent plasma resistance while improving process productivity and reducing cost.

Hereinafter, the SiC structure designed in the present invention will be described in detail.

2a and 2b are diagrams schematically showing a section cut in the first direction (FIG. 2a) and a section cut in the second direction (FIG. 2b) of a SiC structure according to an embodiment of the present invention The cross-sectional view of the crystal grain form; FIGS. 2c and 2d are SEM images of the SiC structure according to an embodiment of the present invention corresponding to FIGS. 2a and 2b.

An example of the SiC structure proposed in the present invention will be described with reference to FIGS. 2a to 2d. The crystal grains of the SiC structure may be formed in a relatively longer shape on a cross section in the first direction than in the second direction. As mentioned above, when it includes crystal grains that are formed to be longer in a specific direction, when defects or etching occur, it is possible to design and realize the advantageous effect of the crystal grain orientation on the product.

The SiC structure formed by the CVD method according to an aspect of the present invention relates to a SiC structure for exposure to plasma inside a chamber, when the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first When the direction is defined as the second direction that is horizontal to the surface that is most exposed to the plasma, it includes a crystal grain structure whose length in the first direction is greater than that in the second direction.

The SiC structure includes a relatively long crystal grain structure formed in the first direction, and the structure can be easily visually confirmed by checking an SEM, a polarizing microscope, or the like.

According to an embodiment, the crystal grains are configured to have a maximum length in a direction of -45° to +45° based on the first direction. The arrangement direction of the crystal grains may not be completely consistent with the first direction, but the direction of the long length of the crystal grains may be a direction close to the first direction. As an example, taking the first direction as a reference, it may include -30 The grains grow at an angle in the range of ° to +30 °.

According to an embodiment, the length of the crystal grain in the first direction/the length of the crystal grain in the second direction (aspect ratio) may be 1.2-20.

As an example, the ratio of the size in the first direction/the size in the second direction of the crystal grains may be 2.5 or more, and, preferably, may be 17.5 or less. As an example, the ratio of the sizes may be 1.25 or more and 9.0 or less. The longer the length in the first direction, the crystal grains can be embodied as needles.

In the SiC structure, the length of the crystal grains in the first direction may be 1.2 times to about 20 times the length of the second direction at most. For example, the size may be an average size.

For the SiC structure proposed in the present invention, a sample with a size of 20mmx10mmx5mm was prepared, and the size of the crystal grains at a total of 175 points in the first direction and the second direction was measured with a 500 magnification basis using SEM equipment. And analyzed the results.

3a to 3f are SEM images according to an embodiment of the present invention, which show a procedure for measuring the size of crystal grains on a cross section of the SiC structure in the first direction as an example of the SiC structure.

As shown in FIGS. 3a to 3f, the part called crystal grain in the present invention refers to the part that appears in a dark color on the microstructure image of the cross section of the SiC structure. It can be determined from FIGS. 3a to 3f that the crystal grains are arranged with the first direction as the center.

The following Table 1 is the value of the crystal grain size and its ratio measured 175 times in each direction using the SiC structure of the present invention as described above. [Table 1] Analysis of crystal grain size

According to an embodiment, the SiC structure may include: a first surface that is exposed to the plasma to the utmost extent and expands in a direction perpendicular to the first direction; and a second surface that is perpendicular to the The first surface is expanded in a direction perpendicular to the second direction.

As an example of the SiC structure proposed in the present invention, 10 samples with dimensions of 1 mm (width) x 2 mm (length) x 10 mm (thickness) relative to the SiC structure were prepared, and measurements in the first and second directions Strength value, and analyzed its results.

8a and 8b are diagrams showing a rough method of measuring the strength in the first direction (FIG. 8a) and the second direction (FIG. 8b) of the SiC structure according to an embodiment of the present invention.

A universal material analyzer (UTM, manufacturer UNITECH) was used for measurement, and the sample was prepared as small as possible to analyze the ring material, and the analysis was performed on the basis of measuring the three-point bending strength.

The spacing is adjusted to 2mm, the crosshead speed is 0.5mm/min, and the span is 11mm. Other samples are prepared and measured in accordance with KSL1591. During the measurement, each intensity value is measured by directly applying a force in the direction perpendicular to the second surface in the direction perpendicular to the first surface to be measured.

The following Table 2 is an example of the SiC structure of the present invention as described above, and shows the value of the strength and the ratio of ten samples measured in the first direction and the second direction using the SiC structure. [Table 2] Strength analysis

4 is a graph showing the distribution of intensity values measured in the first direction and the second direction of the SiC structure according to an embodiment of the present invention.

According to an embodiment, the average intensity in the first direction may be 133Mpa to 200Mpa, and the average intensity in the second direction may be 225Mpa to 260Mpa.

According to an embodiment, the average intensity in the first direction/the average intensity in the second direction may be 0.55 to 0.9.

As an example of the SiC structure, the average strength value in the second direction may be higher than the average strength value in the first direction. Since the shape of the SiCk structure used in the semiconductor manufacturing process is mostly thin in the first direction, the strength measured in the second direction must be high in order to facilitate the transportation and installation procedures in the customer manufacturing process.

As an example of the SiCk structure proposed in the present invention, the SiC structure was prepared, and the size of the structure was 20mm (width) x 4mm (length) x 4mm (thickness) in the second direction about 30Ωcm, about 40, 60, 30, and 20 samples of the structure of 10Ωcm, the structure of about 1Ωcm, and the structure of less than 1Ωcm. The resistivity values in the first direction and the second direction were measured and compared The value is analyzed. Use NAPSON KOREA's EC-80P, Ts7D and 4-Prob as resistance measuring instruments. During the measurement, the resistivity was measured by contacting 4-Prob to the first surface and the second surface, respectively. As for 4-Prob, the NSCP type with the smallest probe length is used.

5a to 5d show the distribution of resistivity values measured in the first direction and the second direction of a SiC structure according to an embodiment of the present invention (the second direction is about 30Ωcm for the structure, the second direction A graph of a structure of approximately 10 Ωcm, a structure of approximately 1 Ωcm in the second direction, and a structure of 1 Ωcm or less in the second direction).

9a and 9b are diagrams showing a rough method of measuring resistivity in the first direction (FIG. 9a) and the second direction (FIG. 9b) of the SiC structure according to an embodiment of the present invention.

According to one embodiment, the resistivity of the first direction may be 3.0 * 10 ^-3 Ωcm to 5.0 * 10 ^-3 Ωcm, a resistivity in the second direction may be 1.4 * 10 ^-3 Ωcm to 3.0 * 10 ^{- 3} Ωcm.

According to an embodiment, the value of the resistivity in the first direction/the resistivity in the second direction may be 0.05 to 3.3.

The following Table 3 shows the magnitude and ratio of the resistivity of a total of 40 samples measured in the first direction and the second direction by using the SiC structure of the present invention as described above. The following Table 3 is the size data of the classified resistivity of the SiC structure according to an embodiment of the present invention, wherein the resistivity in the second direction is formed to be about 30 Ωcm. By controlling the dopant according to the purpose of the SiC structure, the value of the resistivity can be changed. [Table 3] Resistivity

As mentioned above, the Table 3 shows the value of the resistivity and the ratio of the 40 samples measured in the first direction and the second direction by using the SiC structure of the present invention. The table 3 is the size data of the classified resistivity of the SiC structure according to an embodiment of the present invention, wherein the resistivity in the second direction is formed to be about 30 Ωcm. By controlling the dopant according to the purpose of the SiC structure, the value of the resistivity in the second direction can be changed.

According to an embodiment based on the experimental results of Table 3, the resistivity in the first direction may be 10 Ωcm to 20 Ωcm, and the resistivity in the second direction may be 21 Ωcm to 40 Ωcm.

According to an embodiment based on the experimental results of Table 3, the value of the resistivity in the first direction/the resistivity in the second direction may be 0.25 to 0.95.

The following Table 4 shows the value of the resistivity and the ratio of a total of 60 samples measured in the first direction and the second direction by using another SiC structure of the present invention in the same manner as described above. The following Table 4 is the size data of the classified resistivity of the SiC structure according to an embodiment of the present invention, wherein the resistivity in the second direction is formed to be about 10 Ωcm. [Table 4] Analysis of resistivity

According to an embodiment based on the experimental results of Table 4, the resistivity in the first direction may be 0.8 Ωcm to 3.0 Ωcm, and the resistivity in the second direction may be 2.5 Ωcm to 25 Ωcm.

According to an embodiment based on the experimental results of Table 4, according to an embodiment, the value of the resistivity in the first direction/the resistivity in the second direction may be 0.04 to 0.99.

The following Table 5 shows the value of the resistivity and the ratio of a total of 30 samples measured in the first direction and the second direction by using another SiC structure of the present invention in the same manner as described above. The following Table 5 is the size data of the classified resistivity of the SiC structure according to an embodiment of the present invention, wherein the resistivity in the second direction is formed to be about 1 Ωcm. [Table 5] Analysis of resistivity

According to an embodiment based on the experimental results of Table 5, the resistivity in the first direction may be 1.8 Ωcm to 3.0 Ωcm, and the resistivity in the second direction may be 0.8 Ωcm to 1.7 Ωcm.

According to an embodiment based on the experimental results of Table 5, according to an embodiment, the value of the resistivity in the first direction/the resistivity in the second direction may be 1.15 to 3.2.

The following Table 6 shows the value of the resistivity and the ratio of a total of 20 samples measured in the first direction and the second direction by using another SiC structure of the present invention in the same manner as described above. The following Table 6 is the size data of the resistivity of the classification of the SiC structure according to an embodiment of the present invention, wherein the resistivity in the second direction is formed to be less than 1 Ωcm. [Table 6] Analysis of resistivity

According to an embodiment based on the experimental results in Table 6, the resistivity in the first direction may be 3.0*10 ^-3 Ωcm to 5.0*10 ^-3 Ωcm, and the resistivity in the second direction may be 1.4* 10 ^-3 Ωcm to 3.0*10 ^-3 Ωcm.

According to an embodiment based on the experimental results of Table 6, the value of the resistivity in the first direction/the resistivity in the second direction may be 1.1 to 3.3.

The SiC structure can add dopants to the raw material gas to adjust the resistivity of the SiC material according to the required use. Accordingly, the resistivity in the second direction and the resistance in the first direction can be adjusted according to the amount of dopants added. Rate. As an example, in order to control the resistivity, the added dopant concentration of the SiC structure according to an embodiment of the present invention may be 1×10 ¹⁸ atoms/cc or less.

The orientation of the crystal grains also plays an important role in determining the resistivity in a specific direction. For example, in the case of spherical crystal grains, since there are many interfaces in any direction, electrons can move through the gaps between the crystal grains and the like. However, even in this case, when the number of electrons is saturated by adding a plurality of dopants, many electrons can pass through the interface between the crystal grains due to the tunneling effect. Therefore, when a needle-like crystal structure formed in a specific direction is included in a SiC structure with a doping concentration of 1×10 ¹⁸ atoms/cc or less, since there are not many boundary surfaces, electrons can move along the crystal.

When the resistivity of the SiC structure shows a relatively high value or a low value, it has been recognized that the mechanism applied to each structure is different. The resistivity of the SiC structure in the region where the resistivity exceeds 1.7Ωcm will decrease in the first direction due to the rapid movement of the free electron particles; the second direction of the SiC structure whose resistivity is less than 1.7Ωcm due to the rapid movement of the free electron particles The directional resistivity will decrease. Therefore, in order to prevent the accumulation of charges on part of the surface of the SiC structure during the process, considering the structure of the chamber and the design of the equipment, the preferred direction can be determined according to the electron moving path, and the appropriate resistivity value can be designed and used. .

According to an example, since the resistance in the first direction can be relatively small, the movement of the charges in the first direction becomes easier. Therefore, when the SiC structure of the present invention is placed in an environment where a lot of plasma enters the first direction, it is possible to prevent the occurrence of a phenomenon in which electric charges accumulate on the surface of the SiC structure. As a result, the arc problem caused by the accumulation of electric charges on the surface of the SiC structure can be improved.

When a large amount of plasma enters the SiC structure in the second direction with a higher resistivity value, a high charge accumulation phenomenon will occur on the surface of the SiC structure, which will cause arc problems. This can be the biggest cause of defects in manufactured parts.

] HV：維氏硬度，F：載荷（N），d：壓痕的對角線長度的平均（mm）As an example of the SiC structure proposed by the present invention, two samples with a size of 4 mm (width) x 4 mm (length) x 4 mm (height) were prepared and a Vickers hardness tester was used. The test was carried out based on KS B 0811 Measurement, as shown in Figure 10a and Figure 10b, directly press in the first direction/second direction to measure the measurement surface. After the measurement, the hardness value was calculated according to the following formula, and the Vickers hardness value in the first direction and the second direction were measured at a total of 10 points, and the results were analyzed. N/mm ²

] HV: Vickers hardness, F: load (N), d: average of the diagonal length of the indentation (mm)

6 is a graph showing the distribution of hardness values measured in the first direction and the second direction of the SiC structure according to an embodiment of the present invention.

10a and 10b are diagrams showing a rough method of measuring the hardness in the first direction (FIG. 10a) and the second direction (FIG. 10b) of the SiC structure according to an embodiment of the present invention.

As an example of the SiC structure proposed in the present invention, it can be confirmed that the hardness values in the first direction and the second direction show almost equal values compared with other physical property indexes.

As described above, the following Table 7 is an example of the SiC structure of the present invention, and is the value of the hardness and the ratio of the hardness measured in the first direction and the second direction at a total of 10 points on two samples. [Table 7] Analysis of hardness

According to an embodiment, regardless of the direction, the hardness of the SiC structure may be 2800 kg _f /mm ² to 3300 kg _f /mm ² .

According to an embodiment, the value of the hardness in the first direction/the hardness in the second direction may be 0.85 to 1.15.

As an example of the SiC structure proposed in the present invention, 8 samples with a size of 4 mm (width) x 4 mm (length) x 2 mm (thickness) were prepared, and XRD analysis was performed in the first direction and the second direction. As for the analysis method, the Regaku Dmax2000 equipment was used, the measurement angle was 10 to 80°, the scanning step size was 0.05, the scanning speed was 10, the measurement power was 40KV, and the measurement was performed at 40mA, and the obtained graph was analyzed.

FIG. 7 is a graph showing the distribution of the diffraction intensity value of the (111) crystal plane in the XRD analysis values measured in the first direction and the second direction of the SiC structure according to an embodiment of the present invention.

11a and 11b are diagrams showing a rough method of performing XRD diffraction analysis in the first direction (FIG. 11a) and the second direction (FIG. 11b) of a SiC structure according to an embodiment of the present invention.

In addition, the following Table 8 is an example of the SiC structure of the present invention as described above, and is the result of XRD analysis of 8 samples in the first direction and the second direction. [Table 8] XRD analysis

According to an embodiment, for the peak intensity of the crystal plane direction in the first direction and the second direction analyzed by XRD, the values of [(200+220+311)]/(111) can be respectively: towards the first direction 0.7 to 2.1, 0.4 to 0.75 in the second direction.

According to an embodiment, for the peak intensity of the crystal plane direction in the first direction and the second direction analyzed by XRD, the value of the first direction of the value of [(200+220+311)]/(111)/the first direction The value of the two directions can be 1.0 to 4.4.

According to an embodiment, for the peak intensity of the first direction and the second direction of the XRD analysis, the peak intensity of the (111) crystal plane direction may be 3200 to 10000 in the first direction, and may be 3200 to 10000 in the second direction. 10500 to 17500.

According to an embodiment, for the peak intensity in the first direction and the second direction analyzed by XRD, the peak intensity in the (111) crystal plane direction in the first direction/the crystal plane in the second direction (111) The value of the peak intensity in the plane direction may be 0.2 to 0.95.

The crystal grains formed by the (111) plane on the SiC crystal phase have more atoms per unit area than the other (200), (220) and (311) planes, so they are more resistant to the impact of physical plasma particles, which can Preparation of SiC structure with excellent anti-plasma performance. Therefore, when its peak value is low and has a high (111) diffraction strength, it can become a product with relatively excellent plasma resistance performance, which can increase the use time in plasma etching equipment.

In the SiC structure prepared according to an example, the peak intensity in the direction of the (111) crystal plane in the second direction can be realized to be much higher than the value of the peak intensity in the direction of the (111) crystal plane in the first direction. At this time, when the SiC component is manufactured, when the irradiation direction (main etching direction) of the plasma is designed to be close to the second direction, the effect of improving the product life can be expected.

14 is an image showing the microstructure (grain structure) of the first-direction section and the second-direction section of a SiC structure according to an embodiment of the present invention, and the microstructure is etched when exposed to plasma SEM image of the shape.

Under the same conditions, the first-direction section and the second-direction section of FIG. 14 were exposed to plasma. For example, when the SiC structure is an edge ring, the surface perpendicular to the first direction may be the upper surface of the edge ring, and the second surface perpendicular to the second direction may be the side surface of the edge ring. The cross section in the first direction may be the upper surface of the edge ring, and the cross section in the second direction may be the side surface of the edge ring. It can be confirmed from the SEM image of the microstructure on the right surface of FIG. 13 that the degree of etching can be significantly different depending on the direction of exposure to the plasma.

Considering the above effects, the (111) second direction with high diffraction strength can have more excellent anti-plasma performance. That is, when the second direction is designed to be a surface suitable for plasma, a product with excellent anti-plasma performance can be realized.

As an example of the SiC structure proposed in the present invention, the thermal expansion coefficient was measured and obtained by increasing the temperature from room temperature to 1000°C. A TMA device (TMA402F1 Hyperion type from NETZSC) was used for measurement. Three samples with dimensions of 4mm (width) x 4mm (length) x 4mm (thickness) were measured along the first direction and the second direction. After measuring the temperature from room temperature to 1000°C, the measured value of 100°C unit is calculated and analyzed in the range of 500°C to 1000°C (due to the error in the low temperature zone, the measurement does not include the low temperature zone).

FIGS. 12a and 12b are diagrams showing a rough method of performing thermal expansion coefficient analysis (described below) in the first direction (FIG. 12 a) and the second direction (FIG. 12 b) of the SiC structure according to an embodiment of the present invention.

The thermal expansion coefficient of the SiC structure used in the plasma chamber in a specific direction can be a very important factor that determines the precise etching amount. During the manufacturing process, the temperature inside the plasma chamber will rise to a very high temperature. At this time, when the thermal expansion coefficient in the first direction is relatively larger than the thermal expansion coefficient in the second direction, considering the height of the component initially, the height of the plasma etching object (wafer, etc.) in the accurately set chamber may fluctuate. As a result, the distance from the plasma source will change, making it impossible to precisely control the etching direction of the etched object body, and defective products may eventually appear. Therefore, according to the design of the chamber and the applied parts, in some embodiments, the lower the thermal expansion coefficient in the first direction, the better, and the generation of defective products can be reduced, so that the effect of prolonging the life of the parts is expected.

The following Table 9 is an example of the SiC structure of the present invention as described above. It analyzes the thermal expansion coefficient in the first direction and the second direction on two samples with a size of 4mm (width) x 4mm (length) x 1mm (thickness). The result value. [Table 9] Analysis of thermal expansion coefficient

According to an embodiment, the coefficient of thermal expansion in the first direction may be 4.0*10 ^-6 /°C to 4.6*10 ^-6 /°C, and the coefficient of thermal expansion in the second direction may be 4.7*10 ^-6 /°C to 5.4 *10 ^-6 /℃.

According to an embodiment, the value of the coefficient of thermal expansion in the first direction/the coefficient of thermal expansion in the second direction may be less than 1.0.

As mentioned above, by designing the value of the coefficient of thermal expansion in the first direction to be relatively smaller than the value of the coefficient of thermal expansion in the second direction, it can be manufactured as a part that can be used for precise etching.

According to an embodiment, the value of the coefficient of thermal expansion in the first direction/the coefficient of thermal expansion in the second direction may be greater than 0.7 and less than 1.0.

FIGS. 13a and 13b are diagrams showing a rough method of performing thermal conductivity analysis in the first direction (FIG. 13a) and the second direction (FIG. 13b) of the SiC structure according to an embodiment of the present invention.

As an example of the SiC structure proposed in the present invention, two samples with dimensions of 4 mm (width) x 4 mm (length) x 1 mm (thickness) were prepared, and the thermal conductivity was measured in the first direction and the second direction. The LFA447NanoFlash device from NETZSCH was used, and the thermal conductivity was analyzed based on the laser measurement method. In order to measure the thermal conductivity in the first direction, when measuring in the first direction, the measuring device is in contact with the first surface (the surface perpendicular to the first direction), and the laser is scanned on the opposite surface to measure the thermal conductivity in the first direction. The thermal diffusivity was measured in the second direction in the same way. Based on the values of 0.67J/g/K and 3.21g/cm ³ , the thermal diffusivity (mm ² /s), specific heat (Cp) and density were calculated using the following formulas to measure the thermal conductivity. Thermal conductivity [W/mK] = thermal diffusivity (mm ² /s) x specific heat (J/g/K) x density (g/cm ³ )

The following Table 10, as an example of the SiC structure of the present invention as described above, is the result of analyzing the thermal conductivity of 8 samples in the first direction and the second direction. [Table 10] Analysis of thermal conductivity

According to an embodiment, the thermal conductivity in the first direction may be 215 W/mk to 260 W/mk, and the thermal conductivity in the second direction may be 280 W/mk to 350 W/mk.

According to an embodiment, the value of the thermal conductivity in the first direction/the thermal conductivity in the second direction may be less than 1.0.

According to an embodiment, the value of the thermal conductivity in the first direction/the thermal conductivity in the second direction may be 0.65 to less than 1.0.

During the manufacturing process, the temperature inside the plasma chamber will rise to a very high temperature. The value of the thermal conductivity in a specific direction for the SiC structure in the plasma chamber may be related to the arrangement of the cooling gas in the facility. At this time, the SiC structure can be used by vertical installation or installation on the support (including the lower support of the electrostatic chuck or the upper support of the support base or the upper electrode plate). At this time, according to the structure of the chamber, part of the support The part may be equipped with cooling devices (such as cooling gas channels and other equipment).

At this time, considering the structure of the cooling device in the chamber, the lower the thermal conductivity in the first direction, the more difficult it is to transfer heat in the height direction of the SiC structure, thereby ensuring the temperature uniformity of the wafer, thereby improving the product Productivity.

According to an embodiment, the SiC structure includes: a first surface that is exposed to the plasma to the maximum and expands in a direction perpendicular to the first direction; and a second surface that is perpendicular to the The first surface extends in a direction perpendicular to the second direction, and at least a part of the first surface of the SiC structure (according to an example, the lower surface of the structure) may be in contact with the support portion.

According to an embodiment, the SiC structure may be one of an edge ring, a base, and a shower head.

The SiC structure according to the present invention can be prepared by a method applied to the technical field of the present invention. For example, it can be formed by CVD, or it can be formed by Si source gas, C source gas, hydrogen, nitrogen, helium, and argon. Carrier gas to form. For example, the CVD can be performed under process conditions applied to the technical field of the present invention, and, for example, a deposition apparatus used in the technical field of the present invention can be used to prepare a SiC material.

As an example, in the SiC structure of the present invention, in the CVD deposition chamber, the Si source gas and the C source gas can be injected to the target through separate and/or simultaneous injection inlets. In this case, the Si source gas and the C source gas can be designed as The C source gas is injected from more than one inlet.

As an example, in addition to Si and C, the SiC structure can also be prepared by adding other dopants. At this time, it can also be prepared by a method applied to the technical field of the present invention. For example, it can be formed by CVD, or it can be formed by using Si source gas, C source gas, and general carrier gases such as hydrogen, nitrogen, helium, and argon. form. For example, the growth rate in the SiC deposition process can be adjusted to change the preferred growth direction of the SiC coating film, thereby changing the diffraction intensity ratio (I). The main growth direction and grain size of the crystal can be adjusted by adjusting the growth rate. The growth rate can be adjusted by controlling the injection speed, and the growth rate can also be adjusted by adjusting the temperature in the furnace. In addition, when the growth rate is reduced, a denser SiC layer is produced, and thus the effect of improving the strength and hardness can be expected.

According to an embodiment of the present invention, the SiC structure formed by the CVD method may be a part of a semiconductor manufacturing device that requires plasma resistance, such as an edge ring, a susceptor, and a shower head including SiC.

15 is a graph analyzing the etching amount of the plasma in the first direction and the etching amount of the plasma in the second direction of the SiC structure according to an embodiment of the present invention.

It can be confirmed from FIG. 15 that when the SiC structure proposed in the present invention is used, compared with the second surface, the plasma on the first surface and the second surface are etched by about 14% on the first surface. improve. This is because in terms of crystallinity, the (111) preferential growth of the first surface is better than the second surface. Therefore, when preparing SiC structures such as edge rings, the surface that mainly matches the plasma can be prepared as the first surface. It is more conducive to the service life of the product.

According to an embodiment, the SiC structure includes a first surface that is exposed to the plasma to the maximum and expands in a direction perpendicular to the first direction; and a second surface that is perpendicular to the first direction One side expands in a direction perpendicular to the second direction, and the sum of the areas of the first side may be greater than the sum of the areas of the second side.

As an example, the SiC structure may be an edge ring, and the sum of the area of the first surface is more than twice the sum of the area of the second surface.

Above, the embodiments have been described through limited embodiments and drawings, and those skilled in the art can make various modifications and variations to the above description. For example, the described technique is performed in a different order from the described method, and/or the described constituent elements are combined or combined in a different form from the described method, or replaced or replaced by other constituent elements or equivalents. Replacement can also achieve the same effect.

Therefore, other embodiments, other embodiments, and equivalents of the scope of the patent application all belong to the scope of the patent application.

100a: First side 100b: second side

Fig. 1a is a cross-sectional view schematically showing the structure of a SiC structure according to an embodiment of the present invention installed inside a common plasma chamber; Fig. 1b is a cross-sectional view showing an example of a SiC structure according to an embodiment of the present invention A cross-sectional view of the structure of the edge ring of the wafer mounted in another common plasma chamber; FIG. 1c shows an example of the SiC structure according to an embodiment of the present invention. The edge ring is defined as the first surface 100a and A schematic diagram of the second surface 100b.

Figures 2a and 2b are schematic diagrams including a section cut in the first direction (Figure 2a) and a section cut in the second direction (Figure 2b) of a SiC structure according to an embodiment of the present invention The cross-sectional view of the crystal grain form; FIGS. 2c and 2d are SEM images of the SiC structure according to an embodiment of the present invention corresponding to FIGS. 2a and 2b.

3a to 3f are SEM images showing a procedure of measuring the size of the crystal grains in the first direction and the second direction on the cross section of the SiC structure cut in the first direction according to an embodiment of the present invention.

4 is a graph showing the distribution of intensity values measured in the first direction and the second direction of the SiC structure according to an embodiment of the present invention.

5a to 5d show the distribution of resistivity values measured in the first direction and the second direction of a SiC structure according to an embodiment of the present invention (the second direction is about 30Ωcm for the structure, the second direction A graph of a structure of approximately 10 Ωcm, a structure of approximately 1 Ωcm in the second direction, and a structure of 1 Ωcm or less in the second direction).

6 is a graph showing the distribution of hardness values measured in the first direction and the second direction of the SiC structure according to an embodiment of the present invention.

FIG. 7 is a graph showing the distribution of the diffraction intensity value of the (111) crystal plane in the XRD analysis values measured in the first direction and the second direction of the SiC structure according to an embodiment of the present invention.

8a and 8b are diagrams showing a rough method of measuring the strength in the first direction (FIG. 8a) and the second direction (FIG. 8b) of the SiC structure according to an embodiment of the present invention.

9a and 9b are diagrams showing a rough method of measuring resistivity in the first direction (FIG. 9a) and the second direction (FIG. 9b) of the SiC structure according to an embodiment of the present invention.

10a and 10b are diagrams showing a rough method of measuring the hardness in the first direction (FIG. 10a) and the second direction (FIG. 10b) of the SiC structure according to an embodiment of the present invention.

11a and 11b are diagrams showing a rough method of performing XRD diffraction analysis in the first direction (FIG. 11a) and the second direction (FIG. 11b) of a SiC structure according to an embodiment of the present invention.

12a and 12b are diagrams showing a rough method of analyzing the coefficient of thermal expansion in the first direction (FIG. 12a) and the second direction (FIG. 12b) of the SiC structure according to an embodiment of the present invention.

FIGS. 13a and 13b are diagrams showing a rough method of performing thermal conductivity analysis in the first direction (FIG. 13a) and the second direction (FIG. 13b) of the SiC structure according to an embodiment of the present invention.

14 is an image showing the microstructure (grain structure) of the first-direction section and the second-direction section of a SiC structure according to an embodiment of the present invention, and the microstructure is etched when exposed to plasma SEM image of the shape.

15 is a graph analyzing the etching amount of the plasma in the first direction and the etching amount of the plasma in the second direction of the SiC structure according to an embodiment of the present invention.

Domestic deposit information (please note in the order of deposit institution, date and number) none Foreign hosting information (please note in the order of hosting country, institution, date, and number) none

100a: First side

100b: second side

Claims (30)

A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber. When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, the horizontal When the direction of the surface exposed to the plasma to the maximum is defined as the second direction, it includes the grain structure whose length in the first direction is greater than the length in the second direction, and the average strength in the first direction is 133Mpa to 200Mpa, the average intensity in the second direction is 225Mpa to 260Mpa. A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber. When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, the horizontal When the direction of the surface exposed to the plasma to the maximum is defined as the second direction, it includes the grain structure whose length in the first direction is greater than the length in the second direction, and the average strength in the first direction/the The average intensity value in the second direction is 0.55 to 0.9. A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber. When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, the horizontal When the direction of the surface that is most exposed to the plasma is defined as the second direction, it includes a grain structure whose length in the first direction is greater than that in the second direction, and the resistivity in the first direction is 3.0* 10 ^-3 Ωcm to 25 Ωcm, and the resistivity in the second direction is 1.4*10 ^-3 Ωcm to 40 Ωcm. A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber. When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, the horizontal When the direction of the surface exposed to the plasma to the maximum is defined as the second direction, it includes the crystal grain structure whose length in the first direction is greater than the length in the second direction, and the resistivity in the first direction/the The value of the resistivity in the second direction is 0.05 to 3.3. A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber. When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, the horizontal When the direction of the surface exposed to the plasma to the utmost is defined as the second direction, it includes a grain structure whose length in the first direction is greater than that in the second direction, and the resistivity in the first direction is 10 Ωcm to 20Ωcm, the resistivity in the second direction is 21Ωcm to 40Ωcm. A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber, When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, and the direction horizontal to the surface exposed to the plasma to the maximum is defined as the second direction, the length of the first direction is included For the crystal grain structure larger than the length in the second direction, the resistivity in the first direction is 0.8 Ωcm to 3.0 Ωcm, and the resistivity in the second direction is 2.5 Ωcm to 25 Ωcm. A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber. When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, the horizontal When the direction of the surface exposed to the plasma to the maximum is defined as the second direction, it includes a crystal grain structure whose length in the first direction is greater than that in the second direction, and the resistivity in the first direction is 1.8Ωcm To 3.0Ωcm, the resistivity in the second direction is 0.8Ωcm to 1.7Ωcm. A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber. When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, the horizontal When the direction of the surface that is most exposed to the plasma is defined as the second direction, it includes a crystal grain structure whose length in the first direction is greater than that in the second direction, and the resistivity in the first direction is 3.0* 10 ^-3 Ωcm to 5.0*10 ^-3 Ωcm, and the resistivity in the second direction is 1.4*10 ^-3 Ωcm to 3.0*10 ^-3 Ωcm. A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber. When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, the horizontal When the direction of the surface exposed to the plasma to the maximum is defined as the second direction, it includes the grain structure whose length in the first direction is greater than the length in the second direction. The peak intensity in the crystal plane direction in the second direction, [(200+220+311)]/(111) values are respectively: 0.7 to 2.1 in the first direction and 0.4 to 0.75 in the second direction. A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber. When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, the horizontal When the direction of the surface exposed to the plasma to the maximum is defined as the second direction, it includes the grain structure whose length in the first direction is greater than the length in the second direction. The peak intensity in the second direction, the peak intensity in the direction of the (111) crystal plane, is 3,200 to 10,000 in the first direction, and 10,500 to 17,500 in the second direction. A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber. When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, the horizontal When the direction of the surface exposed to the plasma to the maximum is defined as the second direction, it includes the grain structure whose length in the first direction is greater than the length in the second direction. For the peak intensity in the second direction, the value of the peak intensity in the (111) crystal plane direction in the first direction/the peak intensity in the second direction (111) crystal plane direction is 0.2 to 0.95. A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber. When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, the horizontal When the direction of the surface that is most exposed to the plasma is defined as the second direction, it includes a grain structure whose length in the first direction is greater than that in the second direction, and the coefficient of thermal expansion in the first direction is 4.0* From 10 ^-6 /°C to 4.6*10 ^-6 /°C, the coefficient of thermal expansion in the second direction is from 4.7*10 ^-6 /°C to 5.4*10 ^-6 /°C. A SiC structure formed by a CVD method relates to a SiC structure used to be exposed to plasma inside a chamber, When the direction perpendicular to the surface exposed to the plasma to the maximum is defined as the first direction, and the direction horizontal to the surface exposed to the plasma to the maximum is defined as the second direction, the length of the first direction is included For the grain structure greater than the length in the second direction, the thermal conductivity in the first direction is 215 W/mk to 260 W/mk, and the thermal conductivity in the second direction is 280 W/mk to 350 W/mk. In the SiC structure formed by the CVD method according to any one of claims 1 to 13, the crystal grains are arranged to have a maximum length in a direction of -45° to +45° based on the first direction. The SiC structure formed by the CVD method according to any one of claims 1 to 13, wherein the length of the crystal grain in the first direction/the length of the crystal grain in the second direction (aspect ratio) is 1.2 To 20. The SiC structure formed by the CVD method according to any one of claims 1 to 13, wherein the SiC structure includes: a first surface that is exposed to the plasma to the maximum and is perpendicular to the plasma Expand in the direction of the first direction; the second surface, which is perpendicular to the first surface, and expands in the direction perpendicular to the second direction. The SiC structure formed by the CVD method as described in any one of claims 1, 2, 9 to 13, The value of the resistivity in the first direction/the resistivity in the second direction is 0.25 to 0.95. In the SiC structure formed by the CVD method according to any one of claims 1, 2, 9 to 13, the resistivity in the first direction/the resistivity in the second direction has a value of 0.04 to 0.99. In the SiC structure formed by the CVD method according to any one of claims 1, 2, 9 to 13, the resistivity in the first direction/the resistivity in the second direction has a value of 1.15 to 3.2. In the SiC structure formed by the CVD method according to any one of claims 1, 2, 9 to 13, the resistivity in the first direction/the resistivity in the second direction has a value of 1.1 to 3.3. The SiC structure formed by the CVD method as described in any one of claims 1 to 13, regardless of the direction, the hardness of the SiC structure is 2800 kg _f /mm ² to 3300 kg _f /mm ² . In the SiC structure formed by the CVD method according to any one of claims 1 to 13, the value of the hardness in the first direction/the hardness in the second direction is 0.85 to 1.15. The SiC structure formed by the CVD method as described in any one of claims 1 to 8, and 10 to 13, For the peak intensity of the crystal plane direction in the first direction and the second direction of the XRD analysis, the value in the first direction/the value in the second direction of the value of [(200+220+311)]/(111) 1.0 to 4.4. In the SiC structure formed by the CVD method according to any one of claims 1 to 11 and 13, the value of the coefficient of thermal expansion in the first direction/the coefficient of thermal expansion in the second direction is less than 1.0. In the SiC structure formed by the CVD method according to any one of claims 1 to 11 and 13, the value of the coefficient of thermal expansion in the first direction/the coefficient of thermal expansion in the second direction is greater than 0.7 and less than 1.0. In the SiC structure formed by the CVD method according to any one of claims 1 to 12, the value of the thermal conductivity in the first direction/the thermal conductivity in the second direction is less than 1.0. In the SiC structure formed by the CVD method according to any one of claims 1 to 12, the value of the thermal conductivity in the first direction/the thermal conductivity in the second direction is 0.65 to less than 1.0. The SiC structure formed by the CVD method according to any one of claims 1 to 13, wherein the SiC structure includes: a first surface that is exposed to the plasma to the maximum and is perpendicular to The direction of the first direction expands; the second surface, which is perpendicular to the first surface, and expands in a direction perpendicular to the second direction, at least a part of the first surface of the SiC structure and the support portion get in touch with. The SiC structure formed by the CVD method according to any one of claims 1 to 13, wherein the SiC structure is one of an edge ring, a susceptor, and a shower head. The SiC structure formed by the CVD method according to any one of claims 1 to 13, wherein the SiC structure includes: a first surface that is exposed to the plasma to the maximum and is perpendicular to the The first direction expands in the direction; the second surface is perpendicular to the first surface and expands in the direction perpendicular to the second direction, and the sum of the area of the first surface is greater than the sum of the area of the second surface.

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