TWI748497B - Electrode-defined unsuspended acoustic resonator - Google Patents

Abstract

The present invention provides a bulk acoustic wave resonator that can operate in a bulk acoustic wave mode, which includes a resonator body mounted on a separate carrier, the carrier being not a part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and an upper conductive layer. The upper conductive layer is located above the piezoelectric layer and the other side of the piezoelectric layer is the device layer. The aforementioned piezoelectric layer is LiNbO ₃ single crystal cut at an angle of 130°±30°. The surface of the device layer opposite to the piezoelectric layer is used to mount the resonator body on the carrier.

Description

Electrode defines an unsuspended acoustic resonator

The present invention relates to a bulk acoustic wave resonator, in particular to a bulk acoustic wave resonator, which has a resonator body and optionally one or more connection structures. The aforementioned connection structures can be used to supply electrical signals to one or The conductive layer of a plurality of resonators.

Wireless communication has progressed from the "1G" system in the 1980s to the "2G" system in the 1990s, to the "3G" system in the 2000s, and to the "4G" system standardized in 2012. In existing wireless communications, surface acoustic wave (SAW) filters or bulk acoustic wave (BAW) filters are used to filter RF signals.

Film-bulk-acoustic-resonators (FBAR) and solid-mounted-resonators (SMR) are two types of BAW filters, which are piezoelectric-driven micro-electromechanical systems (micro-electro-mechanical systems). -mechanical-system; MEMS) device, compared with SAW filter device, can make current 4G wireless communication resonate at relatively high frequency and relatively low insertion loss. These BAW acoustic resonators include a piezoelectric stack having, for example, a piezoelectric material film sandwiched between an upper electrode film and a lower electrode film. Piezoelectric The resonant frequency of the stack is based on the thickness or depends on the thickness of the film of the piezoelectric stack. As the thickness of the piezoelectric stacked film decreases, the resonance frequency increases. The film thickness of the resonator is critical and must be precisely controlled to obtain the desired resonance frequency. In order to achieve the target or specific RF frequency in the reasonable profit of the FBAR and SMR production process, it is difficult and time-consuming to modify the different areas of the piezoelectric stack to achieve a uniformly high thickness.

The 5G wireless communication system under development will eventually replace the aforementioned early communication system with lower performance. The RF frequency of the aforementioned early communication system is between a few hundred MHz and 1.8 GHz. 5G systems will operate at higher RF frequencies, for example: 3-6GHz (below 6GHz) or higher to 100GHz.

Due to the increase in frequency, it is necessary to reduce the film thickness of FBAR and SMR-related RF filters used in 5G applications to increase the resonance frequency, which is one of the challenges faced by BAW acoustic resonators in the current state of the art. The decrease in the thickness of the piezoelectric film means that the distance between the upper electrode and the lower electrode of the piezoelectric stack is reduced, resulting in an increase in capacitance. The increase in capacitance causes higher feedthrough of the RF signal and reduces the signal to the noise ratio, which is undesirable. The ideal piezoelectric coupling efficiency of the piezoelectric stack (the upper electrode, the lower electrode and the piezoelectric layer between the upper and lower electrodes) can come from an ideal combination, which is the thickness of the piezoelectric layer, the thickness of the upper electrode, and the thickness of the lower electrode And the alignment and direction of the piezoelectric crystal. In order to achieve the high RF frequency operation required for 5G communication, reducing the thickness of the piezoelectric film may not be able to obtain the best piezoelectric coupling efficiency, which results in higher insertion loss and higher motion impedance. The thickness of the electrode, whether the upper electrode, the lower electrode, or both, must be reduced. The decrease in electrode thickness leads to an increase in resistivity, which will lead to another undesirable limitation, namely higher insertion loss.

In addition, the frequency product and the quality factor (or Q Value) is generally unchanged, which means that an increase in the resonance frequency will lower the Q value. The decrease in Q value is not expected, especially the current technical level of FBAR and the Q of SMR is about to approach the theoretical limit frequency of 2.45GHz or lower. Therefore, doubling the frequency will cause the Q value to decrease, and it will be difficult to manufacture RF devices, such as RF filters, RF resonators, RF switches, and RF oscillators.

In view of this, the present invention provides a resonator body that can be operated in a bulk acoustic wave mode, ideally in a lateral resonance mode. The bottom of the resonator body can be mounted or coupled to the mounting substrate or carrier, and the resonator body can be used as an RF filter, RF resonator, RF switch, and RF oscillator.

The present invention also provides a bulk acoustic wave resonator, which includes a resonator body and one or more connecting structures, which can transmit electrical information to one or more conductive layers of the resonator body. In an ideal and non-limiting implementation form or example, the aforementioned one or more connecting structures can be integrally formed and/or formed of the same layer of material as the aforementioned resonator body, so the bulk acoustic wave resonator can be a single object. The bottom of a single-object bulk acoustic resonator can be installed or coupled to the mounting substrate or carrier, and the resonator body can be used as an RF filter, RF resonator, RF switch, and RF oscillator.

The bulk acoustic resonator of the present invention is characterized in that it includes: a resonator body, including: a piezoelectric layer; a device layer; and an upper conductive layer located above the piezoelectric layer and between the piezoelectric layer The other side is the aforementioned device layer; wherein the entire surface of the aforementioned device layer opposite to the aforementioned piezoelectric layer is substantially used to mount the aforementioned resonator body on a carrier and separate the aforementioned resonator body.

2: Bulk Acoustic Resonator (UBAR)

4: Resonator body

6: Upper conductive layer

8: Piezoelectric layer

10: Optional lower conductive layer

12: Device layer

14: Carrier

16: Substrate

18: Finger electrode

20, 24, 28: shrapnel

22, 26: back

27: comb electrode

30: first back

32: second back

33: sheet electrode

34, 36: Connection structure

38: refers to spacing

40, 44: bottom metal layer

42, 46: metal layer

48, 58: contact pad

50: Conductive vias

52, 60: Conductor

54: Transverse conductor

56, 62: Tether conductor

64, 66, 68, 70: bottom

76: Tether structure

82, 84, 88: resonance frequency

90, 92, 94: temperature compensation layer

96: Aluminum Nitride

100: The first low sound resistance layer

102: The first high sound resistance layer

104: The second low sound resistance layer

106: The second high acoustic resistance layer

108: The third low sound resistance layer

110: The third highest acoustic resistance layer

112: The fourth low sound resistance layer

114: The fourth high acoustic resistance layer

116: Fifth low sound resistance layer

118: The fifth highest acoustic resistance layer

120: The sixth low sound resistance layer

122: The sixth highest acoustic resistance layer

124: The seventh low sound resistance layer

126: The seventh high sound resistance layer

128: Eighth low sound resistance layer

130: Eighth High Acoustic Resistance Layer

132: Ninth low sound resistance layer

In combination with the drawings, the present invention is illustrated by the following description, so that the above-mentioned and other objects and technical features of the invention can be more apparent.

[Figure 1] is a side view of an unsuspended bulk acoustic resonator in an ideal and non-limiting embodiment or example according to the principles of the present invention (for example, it is used here to illustrate the first unsuspended bulk acoustic resonator And the second example).

Fig. 2 is a side view of an unsuspended bulk acoustic resonator according to an ideal and non-limiting embodiment or example of the principles of the present invention.

Fig. 3 is a side view of an unsuspended bulk acoustic resonator in an ideal and non-limiting embodiment or example according to the principles of the present invention.

[FIG. 4A] An ideal and non-limiting embodiment or example of a separated plan view of the interdigital electrode according to the principles of the present invention, which can be used as the upper conductive layer and optional lower conductive layer of an unsuspended bulk acoustic wave resonator Layer or both.

[FIG. 4B] An ideal and non-limiting embodiment or example of a separated plan view of comb-shaped electrodes according to the principles of the present invention, which can be used as the upper conductive layer and optional lower conductive layer of an unsuspended bulk acoustic wave resonator Layer or both.

[FIG. 4C] An ideal and non-limiting implementation type or example of a separated plan view of a chip electrode according to the principles of the present invention, which can be used as the upper conductive layer and optional lower conductive layer of an unsuspended bulk acoustic wave resonator Layer or both.

[Figures 5A-5B] are ideal and non-limiting implementation types or examples of Figures 1 to 3, taken along the lines A-A and B-B.

[Figures 6A-6B] are ideal and non-limiting implementation types or examples of Figures 1 to 3, taken along the lines A-A and B-B.

[Figures 7A-7B] are ideal and non-limiting implementation types or examples of Figures 1 to 3, taken along the lines A-A and B-B.

[Fig. 7C] is a side view of the unsuspended bulk acoustic resonator of the ideal and non-limiting implementation type or example in Figs. 7A-7B, with the first and second connecting structures and the material on the tether conductors on both sides removed.

[Figures 8A-8B] are ideal and non-limiting implementation types or examples of Figures 1 to 3, taken along the lines A-A and B-B.

[Fig. 8C] is a side view of the unsuspended bulk acoustic wave resonator of the ideal and non-limiting implementation type or example in Figs. 8A-8B, with the first and second connection structures and the material on the tether conductors on both sides removed.

[Fig. 8D] is a side view of the unsuspended bulk acoustic resonator of the ideal and non-limiting embodiment or example in Figs. 8A-8B, with the first and second connection structures and the two side tether conductors removed.

[Figures 9A-9B] are ideal and non-limiting implementation types or examples of Figures 1 to 3, taken along the lines A-A and B-B.

[Fig. 9C] is a side view of the unsuspended bulk acoustic resonator of the ideal and non-limiting embodiment or example in Figs. 9A-9B, with the first and second connecting structures and the two side tether conductors removed.

[Figure 9D] is a side view of the unsuspended bulk acoustic wave resonator of the ideal and non-limiting implementation type or example in Figures 9A-9B, with the first and second connecting structures and the material on the tether conductors on both sides removed material.

[Fig. 10] is a graph of frequency versus decibel of a resonator body. The resonator body has a lower conductive layer of sheet electrode type and an upper conductive layer of sparse electrode type, wherein the finger spacing is 1.8 μm.

[Figure 11] is an exemplary chart of frequency versus normalized vibration, especially the resonance frequencies of mode 3 and mode 4, which can be used to illustrate the first to sixth examples of unsuspended bulk acoustic resonators described in this specification The frequency response.

[Figure 12] is a side view of an unsuspended bulk acoustic resonator in an ideal and non-limiting embodiment or example according to the principles of the present invention (for example, it is used here to illustrate the third unsuspended bulk acoustic resonator example).

[FIG. 13] An ideal and non-limiting embodiment or example of a side view of an unsuspended bulk acoustic resonator according to the principles of the present invention (for example, here is used to illustrate the fourth of the unsuspended bulk acoustic resonator) And the fifth example).

Fig. 14 is a side view of an unsuspended bulk acoustic resonator according to an ideal and non-limiting embodiment or example of the principle of the present invention (for example, it is used here to illustrate the sixth unsuspended bulk acoustic resonator example).

For the purpose of the following detailed description, it should be understood that, unless explicitly stated to the contrary, the present invention may assume various alternative situations and sequence of steps. It should also be understood that the specific devices and methods described in the following specification are merely exemplary implementation types, examples, or aspects of the present invention. In addition, in addition to any operation examples or special instructions, this specification and the scope of the patent application In ideal and non-limiting implementation types, examples, and levels, the number of ingredients mentioned in all cases should be understood as the word "about". Therefore, unless explicitly stated to the contrary, the numerical parameters established in the following specification and the scope of the patent application are approximate values and may vary according to the required properties obtained by the present invention. Therefore, each numerical parameter should be explained at least based on the number of significant figures reported and by ordinary rounding techniques.

Although the numerical ranges and parameters describing the broad scope of the present invention are approximate values, the numerical values set forth in the specific embodiments are reported as accurately as possible. However, any numerical value inherently contains the necessary partial error caused by the standard deviation found in its respective test measurement.

In addition, it should be understood that any numerical range described in the present invention should include all sub-ranges included in the summary. For example: the range of "1 to 10" is intended to include all sub-ranges (and inclusive) between the listed minimum value of 1 and the listed maximum value of 10, that is, the minimum value is equal to or greater than 1 and the maximum value is equal to or less than 10.

It should also be understood that the specific devices and steps described in the drawings and the following description are merely exemplary embodiments, examples or aspects of the present invention. Therefore, the exemplary implementation types, examples, or aspects of the present invention are not limited to specific dimensions or other related physical characteristics. Specific ideal and non-limiting embodiments, examples, or aspects of the present invention will be described by the same element codes corresponding to the same or functionally equivalent elements in the drawings.

In the present invention, unless otherwise specified, the use of the singular number may include the plural number and the plural surrounding the singular number. Furthermore, in the present invention, unless otherwise specified, the use of "or" means "and/or", even though "and/or" may be used in specific situations. Furthermore, in the present invention, the use of "a" means "at least one" unless otherwise specified.

For the purpose of the following description, the terms "end", "up", "down", "right", "Left", "Vertical", "Horizontal", "Top", "Bottom", "Horizontal", "Vertical" and their derivatives should be related to the examples in the figure. However, it should be understood that the examples may assume various alternative situations and sequence of steps, unless otherwise specifically stated. It should be noted that the drawings and the specific examples contained in this specification are only illustrative examples or aspects of the present invention. Therefore, the illustrative examples or aspects disclosed in this article should not be limited thereto.

As shown in Figure 1, in an ideal and non-limiting implementation form or example, according to the principles of the present invention, an unsuspended bulk acoustic resonator (UBAR) 2 can operate in a bulk acoustic wave mode and includes a resonator body 4. It can include stacked layers from top to bottom, and the stacked layers include an upper conductive layer 6, a piezoelectric layer 8, an optional lower conductive layer 10, and a device layer 12. In the example of UBAR 2 shown in FIG. 1, the bottom of the conductive layer 12 can be mounted, for example, directly mounted on the mounting substrate or carrier 14.

Referring to Figure 2 and continuing Figure 1, in an ideal and non-limiting embodiment or example, according to the principles of the present invention, another UBAR2 example can be similar to the UBAR2 shown in Figure 1, with the difference being the resonance of Figure 2 The device body 4 may include an optional substrate 16 between the device layer 12 and the carrier 14. In one example, the bottom of the conductive layer 12 can be installed, for example, directly on the top of the substrate 16, and the bottom of the substrate 16 can be installed, for example, on the carrier 14 directly.

Referring to Figure 3 and continuing Figures 1 and 2, in an ideal and non-limiting embodiment or example, according to the principles of the present invention, another UBAR2 example can be similar to the UBAR2 shown in Figure 2, with the difference being Figure 3 The resonator body 4 may include an optional second substrate 16-1 between the device layer 12 and the piezoelectric layer 8 or the optional lower conductive layer 10, and/or the second substrate 16-1 and the pressure The electrical layer 8 or the optional lower conductive layer 10 includes a second device layer 12-1 therebetween. in a In an ideal and non-limiting embodiment or example, if the resonator body 4 of FIG. 3 can further include one or more additional device layers 12 (not specifically shown) and/or one or more additional substrates 16 ( Not specifically shown) is better. Another example of the resonator body 4 has several device layers 12 and a substrate 16, and may include an exemplary sequence, from the piezoelectric layer 8 or the optional lower conductive layer 10 to the carrier 14 as follows: the first device layer , The first substrate, the second device layer, the second substrate; the third device layer, the third substrate, etc. continue in this way. In an ideal and non-limiting implementation type or example, the resonator body 4 may include a plurality of device layers 12 and/or a plurality of substrates 16, and each device layer 12 may be made of the same or different materials. The material 16 can be made of the same or different materials. In an ideal and non-limiting embodiment or example, the number of device layers 12 and the number of substrates 16 can be different. In an example, illustratively from the piezoelectric layer 8 or the optional lower conductive layer 10 to the carrier 14, the resonator body 4 may include the device layer 12-1, the substrate 16-1, and the device layer 12 as the resonator body 4 is the lowest level. Examples of materials that can be used as each device layer 12 and each substrate 16 are described below.

In an ideal and non-limiting implementation type or example, as shown in FIGS. 1-3, one or more temperature compensation layers 90, 92, 94 may be on the top surface of the upper conductive layer 6; on the piezoelectric layer 8 or Optionally, between the lower conductive layer 10 and the device layer 12; and/or between the device layer 12 (or 12-1) and the substrate 16 (or 16-1). Each temperature compensation layer may include at least one of silicon and oxygen. For example, each temperature compensation layer may include silicon dioxide, or a silicon element, and/or an oxygen element. One or more optional temperature compensation layers 90, 92, 94 can help prevent the resonant frequency from changing due to the heat generated by the resonator body 4 in the examples shown in FIGS. 1-3.

In a plan view, the resonator body 4 and/or UBAR 2 described in the present invention can be To have a cube or cuboid shape. However, the resonator body 4 and/or UBAR 2 may have other shapes.

As shown in FIGS. 4A-4C and following all the previous figures, in an ideal and non-limiting implementation type or example, one or two conductive layers 6 and optional conductive layers 10 can be represented by interdigitated electrodes 18 (FIG. 4A ), it may include a conductive wire or elastic sheet 20, supported by the back 22, intersected with the conductive wire or elastic sheet 24, and supported by the back 26. In an ideal and non-limiting implementation type or example, one or two conductive layers 6 and optional conductive layers 10 may be presented in the form of comb-shaped electrodes 27 (FIG. 4B), which may include the first back 30 The conductive wire or shrapnel 28 extending over. The end of the conductive wire or elastic piece 28 on the side opposite to the first back 30 can be connected to the optional second back 32 (shown in the dashed line in FIG. 4B). In an ideal and non-limiting implementation type or example, one or two conductive layers 6 and optional conductive layers 10 may be presented in the form of conductive sheet electrodes 33 (FIG. 4C). The lines or shrapnel 20, 24 and 28 are presented in straight lines. In an example, each wire or elastic piece 20, 24, and 28 may be an arc-shaped wire or elastic piece, a spiral wire or elastic piece, or other suitable and/or desired shapes.

In an ideal and non-limiting implementation type or example, the upper conductive layer 6 may be in the form of the interdigitated electrode 18, or the comb-shaped electrode 27 or the sheet-shaped electrode 33. Independent of the form of the upper conductive layer 6, the optional bottom conductive layer 10 may be in the form of the interdigitated electrode 18, or the comb-shaped electrode 27 or the sheet-shaped electrode 33. Hereinafter, for descriptive purposes only, in an ideal and non-limiting embodiment or example, the upper conductive layer 6 will be described as presenting in the form of a comb-shaped electrode 27, which includes a first back 30 and an optional second The two back portions 32 and the optional lower conductive layer 10 will be described in the form of sheet electrodes 33. However, this embodiment is not limited to this, and any one of the interdigitated electrode 18, the comb-shaped electrode 27, or the sheet-shaped electrode 33 may be used as the upper conductive layer. 6. Combine any one of the interdigital electrode 18, comb-shaped electrode 27, or sheet-shaped electrode 33 as an optional lower conductive layer 10.

In an ideal and non-limiting embodiment or example, the resonance frequency of the resonator body 4 having at least the upper conductive layer 6 in the form of the interdigital electrode 18 or the comb electrode 27 in each example, regardless of the optional lower conductive layer The form of 10 can be adjusted or selected in a conventional manner by appropriately selecting the finger spacing 38 (for example: FIGS. 4A-4B), where the finger spacing 38 = finger width + finger slit (between two adjacent fingers). In an example, each resonator body 4 is mainly desired but not all. In the transverse mode, relative to the thickness mode, the resonant frequency of the resonator body 4 can be increased by reducing the finger pitch 38. In an example, each resonator body is mainly desired but not all. In the thickness mode, relative to the transverse mode, the resonant frequency of the resonator body 4 can be reduced by increasing the finger spacing 38.

In an ideal and non-limiting implementation type or example, the resonator body 4 of each example can be in a thickness mode, a transverse mode, or a mixed/composite mode of a combination of the thickness mode and the transverse mode. For thickness mode resonance, the acoustic wave resonates in the thickness direction of the piezoelectric layer 8 and the resonance frequency is based on the thickness of the piezoelectric layer 8 and the thickness of the upper conductive layer 6 and the optional lower conductive layer 10. The combination of the piezoelectric layer 8, the optional lower conductive layer 10, and the upper conductive layer 6 may be referred to as a piezoelectric stack. The sound velocity determined by the resonant frequency of the resonator body 4 in each example described here is the composite sound velocity of the piezoelectric laminate. In one example, the resonance frequency f can be calculated by the acoustic velocity V _a compound divided by twice the piezoelectric stack thickness τ.

For transverse mode resonance, the acoustic wave in the transverse (x or y-direction) of the piezoelectric layer 8 of the resonator, and the piezoelectric stack may be by acoustic velocity V _a compound refers to two times the pitch divided by 38 to obtain the resonance frequency, f = V _a /2 (refers to spacing). When the finger spacing is reduced from the large spacing size δ _L to the small spacing size δ _S , the percentage of frequency increase, PFI _calculation , in an example, can be calculated by the following formula

PFI _Calculated = (δ _L -δ _S )/δ _S.

In one example, when the finger spacing 38 is reduced from 2.2 μm to 1.8 μm , the PFI of the lateral mode is _{calculated to} be 22.2%. In another example, when the finger spacing 38 is reduced from 1.8 μm to 1.4 μm , the PFI of the lateral mode is _{calculated to} be 28.5%.

20%。在複合模式共振的另一個例子中，橫向模式共振的部分L可以

30%。在複合模式共振的另一個例子中，橫向模式共振的部分L可以

40%。 The composite mode resonance may include a part resonating in a thickness mode and a part resonating in a transverse mode. In the composite mode resonance, the part L resonating in the transverse mode can be obtained by changing the finger spacing 38 from the large spacing size δ _L to the small spacing size δ _S to obtain the actual ratio of the increased frequency or the measured percentage (PFI _measurement ) and the calculated ratio of the increased frequency (PFI _calculation ), defined by the ratio between the two. If there are one or more uncontrolled or unforeseen changes, the transverse mode resonance L value can be greater than 100%. In an example, the resonator body 4 may resonate in a thickness mode, a transverse mode, or a composite mode. In the case of compound mode resonance, the part L of the transverse mode resonance can be

20%. In another example of compound mode resonance, the part L of the transverse mode resonance can be

30%. In another example of compound mode resonance, the part L of the transverse mode resonance can be

40%.

In an ideal and non-limiting embodiment or example, a resonator body 4 has an optional lower conductive layer 10 in the form of a chip electrode 33 and an upper conductive layer 6 in the form of a comb electrode 27 , Where the finger spacing 38 of 2.2 μm can resonate in the composite mode, which has the following mode resonance frequencies: mode 1 resonance frequency=1.34GHz; mode 2 resonance frequency=2.03GHz; and mode 4 resonance frequency=2.82GHz.

In one example, a resonator body 4 has an optional lower conductive layer 10 in the form of a sheet-shaped electrode 33 and an upper conductive layer 6 in the form of a comb-shaped electrode 27, with a finger spacing 38 of 1.8 μm. It can resonate in a composite mode, which has the following mode resonance frequencies: mode 1 resonance frequency = 1.49 GHz; mode 2 resonance frequency = 2.38 GHz; and mode 4 resonance frequency = 3.05 GHz. In this example, the transverse mode resonance L percentages of the composite mode resonance can be respectively: L mode 1=53%; L mode 2=78%; and L mode 4=27%. See also FIG. 10, which is a diagram of the relationship between the frequency of the resonator body 4 and dB in this example. In FIG. 10, each peak 82, 84, and 88 represents the response of the resonator body 4 to different modes, the mode 1 resonance frequency = 1.49 GHz; the mode 2 resonance frequency = 2.38 GHz; and the mode 4 resonance frequency = 3.05 GHz.

In one example, the mode 1 resonance frequency can be alternatively considered or related to a surface acoustic wave (SAW); the mode 2 resonance frequency can alternatively be considered or related to the S ₀ (or extended Extensional) mode; and The mode 4 resonance frequency can alternatively be considered or related to the A ₁ (or Flexural) mode. In addition, the mode 3 resonance frequency (described below) can or alternatively be considered or related to the Shear mode. SAW, S ₀ mode, extended mode, A ₁ mode, shear mode, and flexion mode are known to those of ordinary knowledge and will not be further explained here.

In an example, a resonator body 4 has an optional lower conductive layer 10 in the form of a sheet electrode 33 and an upper conductive layer 6 in the form of a comb electrode 27, where a finger spacing 38 of 1.4 μm can be Resonance in the composite mode has the following mode resonance frequencies: mode 1 resonance frequency = 1.79 GHz; mode 2 resonance frequency = 2.88 GHz; and mode 4 resonance frequency = 3.36 GHz. In the resonator body 4 of this example, the transverse mode resonance percentage of the composite mode resonance L can be: L mode 1=70%; L mode 2=74%; and L mode 4=35%.

In an example, the aforementioned resonator body 4 in thickness mode, transverse mode, or composite mode can be applied to each of the UBAR 2 examples shown in FIGS. 1-3, which may include a resonator body 4 and one or more The connection structures 34 and 36 are combined, and the details will be described below.

Next, referring to Figs. 1-3, in an ideal and non-limiting implementation type or example, each resonator body 4 at the bottom layer shown in Figs. 1-3 can be directly installed using any suitable and/or desired installation technology. Mounted on the carrier 14, for example: eutectic mounting, adhesives, etc. Here, "direct installation", "direct installation in..." and similar phrases can be understood as the bottom layer of each resonator body 4 shown in Figs. The carrier 14 is placed and joined to the carrier 14, for example: in one example, mounting, connection, and/or by suitable and/or desired methods, such as: in one example, eutectic bonding, conductive adhesive, non-conductive adhesive Conductive adhesives, etc. In an ideal and non-limiting implementation type or example, the carrier 14 can be used as the surface of the package, such as a traditional integrated circuit (IC) package. After the bottom layer of the resonator body 4 is mounted on the surface of the aforementioned package, the resonator body 4, and generally speaking, UBAR 2 is sealed in the aforementioned package by a conventional method to protect the resonator body 4, more generally for Protection of external environmental conditions UBAR 2. In one example, the package uses a traditional ceramic IC package from NTK Ceramic Co., Ltd., a Japanese company, for mounting UAR. However, this should not be construed as having a limiting meaning, because it is conceivable that the resonator body 4 and/or UBAR 2 can be installed in any suitable/or desired package now known or later developed.

In another example, the carrier 14 may serve as the surface of the substrate, for example, a ceramic sheet, a conventional printed circuit board material sheet, and the like. Here is a description of the total of Figures 1-3 in each substrate example. The bottom layer of the vibrator body 4 and/or UBAR 2 can be installed and is used for illustrative purposes only, and should not be construed as restrictive. The carrier 14 can be made of any suitable and/or desired material, which is compatible with the bottommost material of each resonator body 4 and/or UBAR 2 shown in FIGS. 1-3, and can The resonator body 4 and/or UBAR 2 are used in a conventional method. The carrier 14 may have any form deemed suitable and/or desired by a person with ordinary knowledge in the field. Therefore, this specification is not restrictive regarding the mounting base or carrier 14.

Next, referring to FIGS. 1-3, in an ideal and non-limiting implementation type or example, each UBAR 2 may include one or more optional connection structures 34 and/or 36, which are helpful for the application of electrical signals To the upper conductive layer 6 and optionally the lower conductive layer 10 of the resonator body 4. However, in an ideal and non-limiting implementation type or example, one or more optional connecting structures 34 and/or 36 can be excluded (for example, not provided), in which the electrical signal can be directly applied to the resonator body 4 The upper conductive layer 6 and the optional lower conductive layer 10. Therefore, in an example, the UBAR 2 may include the resonator body 4 without the connection structures 34 and 36. In another example, UBAR 2 may include the resonator body 4 and a separate connection structure 34 or 36. For the purpose of describing the present invention in detail, in the following description UBAR 2 includes an ideal and non-limiting embodiment or example of the resonator body 4 and the connecting structures 34 and 36.

Each connecting structure 34 and 36 can be presented in any suitable and/or desired form, can be formed by any suitable and/or desired method, and can be made of any suitable and/or desired material These materials can help provide independent electrical signals to the upper conductive layer 6 and the optional lower conductive layer 10. In an example, the upper conductive layer 6 is in the form of comb-shaped electrodes 27 with only a back 30 or 32, and the optional lower conductive layer 10 is a combination of only a back 30 or 32, or a sheet-shaped electrode 33. In the form of comb-shaped electrodes 27, the electrical signal can be A single connection structure 34 or 36 is provided for each upper conductive layer 6 and optional lower conductive layer 10. The single connection structure 34 or 36 can be configured to provide electrical signals to the upper conductive layer 6 and the optional lower conductive layer 10, respectively .

In another example, at least one of the upper conductive layer 6 or the optional lower conductive layer 10 has the form of an interdigitated electrode 18 or a comb-shaped electrode 27 and has two backs 30 and 32, by means of a separate connection structure 34 And 36 can provide one or more electrical signals to the backs 24 and 26 of the interdigital electrode 18 and/or the backs 30 and 32 of the comb electrode 27, respectively. The form of the upper conductive layer 6 and the optional lower conductive layer 10 and the manner of providing electrical signals to the upper conductive layer 6 and the optional lower conductive layer 10 should not be restrictive.

In an ideal and non-limiting implementation type or example, without being bound by any specific description, example or theory, the examples of the first and second connecting structures 34 and 36 can be compared with the UBARs 2 shown in Figs. 1-3 Examples are used together and will be explained in the following.

In an ideal and non-limiting embodiment or example, it is only a detailed description of the present invention. As shown in FIGS. 1-3, each connecting structure 34 and 36 will be described as having various layers and/or extended portions of the substrate. Various examples of the resonator body 4 are formed. However, this will not be restrictive, because it is conceivable that each connection structure 34 and 36 can have any suitable and/or desired form and/or structure, which can interact with the upper conductive layer 6 and the optional lower conductive layer 10. Provide one or more individual telecommunications signals.

In an ideal and non-limiting implementation type or example, as shown in Figures 5A-5B, which is a representative diagram along the lines AA and BB in any or all of Figures 1-3, Figure 5A shows the piezoelectric The upper conductive layer 6 in the form of comb-shaped electrodes 27 on top of the layer 8 includes a back 30 and an optional back 32. In an example, the upper conductive layer 6 can be selected in the shape of interdigitated electrodes 18 式presentation. In an ideal and non-limiting embodiment or example, FIG. 5B shows that the optional lower conductive layer 10 under the piezoelectric layer 8 is presented in the form of a sheet electrode 33 (as shown by the dashed line in FIG. 5B). In an example, the optional lower conductive layer 10 can be selected in the form of interdigitated electrodes 18 or comb-shaped electrodes 27. The following are only examples. The upper conductive layer 6 and the optional lower conductive layer 10 will be respectively described as being in the form of comb-shaped electrodes 18, including back 30 and optional back 32, and in the form of sheet-shaped electrodes 33. Present. However, this will not be restrictive.

In an ideal and non-limiting implementation type or example, the connection structures 34 and 36 may include bottom metal layers 40 and 44 (FIG. 5B) contacting the chip electrode 33, which is formed as the part of the resonator body 4. Optional lower conductive layer 10. The bottom layers 40 and 44 may be sheet-shaped and covered by the piezoelectric layer 8. In one example, the bottom layers 40 and 44 can be used as an extension of the sheet electrode 33 and formed at the same time. In another example, the bottom layers 40 and 44 can be formed from the chip electrode 33 and made of the same or different material from the chip electrode 33. In one example, the connection structures 34 and 36 may also include top metal layers 42 and 46 on the top of the piezoelectric layer 8 and the back 30 and back portions of the comb-shaped electrodes 27 respectively contacting the conductive layer 6 formed on the resonator body 4 32 on the back.

In one example, the bottom metal layers 40 and 44 can be connected to the contact pads 48 on the top surfaces of the first and second connection structures 34 and 36 through conductive vias 50 formed in the piezoelectric layer 8. The conductive vias 50 extends between the aforementioned contact pad 48 and the bottom metal layers 40 and 44. For example, each of the top metal layers 42 and 46 may have a sheet shape and be separated from the corresponding contact pad 48 by a gap (not labeled). Each of the top metal layers 42 and 46 can also include a contact pad 58. Each contact pad 48 can be connected, and if necessary, each contact pad 48 can be connected to a suitable signal source (not shown), which can be electrically driven/biased in any suitable and/or desired manner. Lower conductive layer 10. Similarly, the contact pads 58 can be connected, and if necessary, the contact pads 58 can be connected. Connected to a suitable signal source (not shown), which can be used to electrically drive/bias the upper conductive layer 6 in any suitable and/or desired manner.

As shown in the element codes 18 and 27 in FIGS. 5A-5B, the upper conductive layer 6 may also be in the form of interdigitated electrodes 18, and the optional lower conductive layer 10 may also be in the form of comb electrodes 27 or interdigitated electrodes 18 .

As shown in Figures 6A-6B, which are representative diagrams along the lines AA and BB in any or all of Figures 1-3, in an ideal and non-limiting implementation type or example, in Figures 6A-6B The example is similar to the example in Figures 5A-5B, except for at least the following differences. The bottom metal layers 40 and 44 may each be in the form of a pair of spaced apart conductors 52 (as opposed to the conductive sheets shown in FIGS. 5A-5B), which are connected to the sheet electrode 33 by the lateral conductor 54 and the tether conductor 56 The optional lower conductive layer 10. The top metal layers 42 and 46 may each be in the form of a conductor 60. Each conductor 60 may be connected to the back 30 or the back 32 of the comb-shaped electrode 27 formed as the upper conductive layer 6 by the tether conductor 62. The tether conductor 62 may be vertically aligned with the tether conductor 56 and separated from the tether conductor 56 by the piezoelectric layer 8. In one example, as shown in FIGS. 6A-6B, the width of the tether conductor 62 may be less than the width of the tether conductor 60, and the width of the tether conductor 56 may be approximately the same as the width of the tether conductor 62.

As shown in Figures 7A-7B, which are representative diagrams along the lines AA and BB in any or all of Figures 1-3, in an ideal and non-limiting implementation type or example, in Figures 7A-7B The example is similar to the example in Figures 6A-6B, except for at least the following differences. In part or all of the materials of the connection structures 34 and 36 on both sides of the tether conductors 62 and 56, the aforementioned connection structure part can be removed to form a groove, which can be used in the remaining part of the aforementioned connection structure and the resonator body 4 In between, extending from the top to the bottom part of UBAR 2 on both sides of the aforementioned tether conductor Or the full distance. In one example, removing part or all of the material of each connecting structure 34 and 36 on both sides of the tether conductor of the aforementioned connecting structure is defined as a tether structure 76, which may include tether conductors 62 and 56 And a part of the piezoelectric layer 8 is vertically aligned with the tether conductor 62.

7C and continued reference to FIGS. 7A-7B, in an ideal and non-limiting embodiment or example, part or all of the material of each connecting structure 34 and 36 is removed on both sides of the tether conductors 62 and 56, The aforementioned connection structure can be used in any of the UBAR 2 examples in Figures 1-3. For example: FIG. 7C is a side view of the example of UBAR 2 in FIG. Connect the structural part. It can be understood from FIGS. 7A-7C that on both sides of the tether conductors 62 and 56 of the aforementioned connection structure, the material from which the connection structures 34 and 36 are removed may include the upper conductive layer 6, the piezoelectric layer 8, and the optional The parts of the lower conductive layer 10 and the device layer 12, therefore, are not visible in the trenches formed by removing the connecting structures 34 and 36 on both sides of the tether conductors 62 and 56 of the aforementioned connecting structure in FIGS. 7A-7B s material. In the example shown in FIGS. 7A-7C, each tether structure 76 may include from top to bottom: a tether conductor 62, a portion where the piezoelectric layer 8 is vertically aligned with the tether conductor 62, and an optional tether conductor 56 (When the lower conductive layer 10 is present), and the portion where the device layer 12 and the tether conductor 62 are vertically aligned.

In another example, where UBAR 2 includes a substrate 16 (FIG. 2), the dashed line shown in FIG. 7C and optionally one or more additional device layers 12-1 and/or substrate 16-1 (FIG. 3) , On both sides of the tether conductors 62 and 56 each additional device layer 12-1 and/or the base material 16-1 (FIG. 3) and the formation material of the base material 16, each connection structure 34 and 36 can also be removed Part, therefore, in FIGS. 7A-7B, each connection structure 34 is removed on both sides of the tether conductors 62 and 56 of the aforementioned connection structure. There is no visible material in the trench formed by and 36.

In an example, FIGS. 7A-7B are diagrams of the UBAR 2 example in FIG. 2. Each tether structure 76 may include a portion from top to bottom: a tether conductor 62, a piezoelectric layer 8 and a tether conductor 62 that are vertically aligned , The optional tether conductor 56 (when the optional lower conductive layer 10 is present), the portion where the device layer 12 is vertically aligned with the tether conductor 62, and the portion where the substrate 16 and the device layer 12 are vertically aligned. In another example, FIGS. 7A-7B are diagrams of the UBAR 2 example in FIG. 3. Each tether structure 76 may include a tether conductor 62, a piezoelectric layer 8 and a tether conductor 62 vertically aligned from top to bottom. Part, the optional tether conductor 56 (when the optional lower conductive layer 10 is present), the part where the device layers 12 and 12-1 are vertically aligned with the tether conductor 62, and the substrates 16 and 16-1 and the tether The vertically aligned portion of the conductor 62.

As shown in Figures 8A-8B, which are representative diagrams along the lines AA and BB in any or all of Figures 1-3, in an ideal and non-limiting implementation type or example, in Figures 8A-8B The example is similar to the example in Figures 7A-7B, except for at least the following differences. That is, all or part of the material forming the at least one device layer 12 or 12-1 of each connection structure 34 and 36 remains on both sides of the tether conductors 62 and 56 of the aforementioned connection structure, so the aforementioned at least one device layer 12 or The material of 12-1 can be seen in the grooves on both sides of the tether conductors 62 and 56 of the aforementioned connection structure. In an example, FIGS. 8A-8C are diagrams of the UBAR 2 example in FIG. 1. Each tether structure 76 may include a portion from top to bottom: a tether conductor 62, a piezoelectric layer 8 and a tether conductor 62 that are vertically aligned , Optional tether conductor 56 (when the optional lower conductive layer 10 is present). In this example, the device layer 12 is retained in the trench and can be seen in Figures 8A-8B.

In another example, FIGS. 8A-8B are diagrams of the UBAR 2 example in FIG. 2. Each tether structure 76 may include from top to bottom: tether conductor 62, piezoelectric layer 8 and tether conductor 62 The vertically aligned portion, the optional tether conductor 56 (when the optional lower conductive layer 10 is present), the portion where the device layer 12 and the tether conductor 62 are vertically aligned. In this example, the device layer 12 is retained in the trench and can be seen in FIGS. 8A-8B, and the substrate 16 under the device layer 12 is also retained (shown in the dashed line in FIG. 8C), but not visible in FIGS. 8A-8B Groove.

In another example, FIGS. 8A-8B are diagrams of the UBAR 2 example in FIG. 3. Each tether structure 76 can include from top to bottom: a tether conductor 62, a piezoelectric layer 8 and a tether conductor 62 vertically aligned The part, the optional tether conductor 56 (when the optional lower conductive layer 10 is present), the part where the device layer 12 and the tether conductor 62 are vertically aligned. In one example, the device layer 12 is retained and can be seen in the grooves of FIGS. 8A-8B, and the substrate 16 under the device layer 12 is also retained, but not visible in the grooves of FIGS. 8A-8B, each tether The structure 76 also includes the device layer 12-1 and the portion where the substrate 16-1 is vertically aligned with the tether conductor 62. In another example, the device layer 12-1 is retained and can be seen in the trenches of FIGS. 8A-8B, and the substrate 16, 16-1 and the device layer 12 are also retained but not visible in the trenches of FIGS. 8A-8B.

Another example is shown in FIG. 8D, the diagram of the UBAR 2 example in FIG. 1 or 2. Each tether structure 76 may include a tether conductor 62, a piezoelectric layer 8 and a tether conductor 62 that are vertically aligned from top to bottom. Part, the optional tether conductor 56 (when the optional lower conductive layer 10 is present), the part where the body of the device layer 12 and the tether conductor 62 are vertically aligned, by partially removing the connecting structures 34 and 36 The device layer 12 on both sides of the tether conductors 62 and 56 exposes the portion where the body of the device layer 12 and the tether conductor 62 are vertically aligned. The example of FIG. 8D is UBAR 2 shown in FIG. 2. The substrate 16 (the dotted line as shown in FIG. 8D) can be kept under the device layer 12 but is not visible in FIGS. 8A-8B.

In another example, Figure 3 refers to the UBAR 2 example, each tether structure 76 can include from top to bottom: the tether conductor 62, the part where the piezoelectric layer 8 is vertically aligned with the tether conductor 62, the optional tether conductor 56 (when the optional lower conductive layer 10 is present), the device layer The part where the body or device layer 12-1 of 12 and the tether conductor 62 are vertically aligned, by partially removing the device layer 12 or device layer 12 on both sides of the tether conductors 62 and 56 of the respective connecting structures 34 and 36 -1 (similar to FIG. 8D partially removing the device layer 12) to expose the body of the device layer 12 or the part where the device layer 12-1 and the tether conductor 62 are vertically aligned. In one example, when a part of the body of the device layer 12 of UBAR 2 shown in FIG. 3 is removed (similar to the partial removal of the device layer 12 in FIG. 8D), the internal part of the forming material of the device layer 12 of UBAR 2 in FIG. 3 is shown in FIG. As can be seen in the grooves in 8A-8B, each tether structure 76 may also include the device layer 12-1 and the portion where the substrate 16-1 and the tether conductor 62 are vertically aligned. In this example, the substrate 16 is retained, that is, no part of the substrate 16 is removed, which will not be shown in FIGS. 8A-8B.

In another example, when a part of the body of the device layer 12-1 of the UBAR 2 shown in FIG. 3 is removed (similar to the partial removal of the device layer 12 in FIG. 8D), the internal part of the forming material of the device layer 12-1 is shown in FIG. 8A As can be seen in the groove in -8B, each tether structure 76 may also include a portion where the device layer 12-1 and the tether conductor 62 are vertically aligned. In this example, the substrates 16, 16-1 and the device layer 12 are retained, that is, no part of the substrates 16, 16-1 and the device layer 12 are removed, which will not be shown in FIGS. 8A-8B .

Referring to Figures 9A-9B, which are representative diagrams along the lines AA and BB in any or all of Figures 1-3, UBAR 2 in Figure 2 is in an ideal or non-limiting embodiment or example, Figure 9A-9B The example shown is similar to the example of FIGS. 8A-8B, except for at least the following exceptions. Each tether structure 76 may include a part of the forming material of the device layer 12, wherein as shown in FIGS. 9A-9C, a part of the substrate 16 can be seen on both sides of the tether conductors 62 and 56 of the connecting structures 34 and 36 In the formed trench. In this example, the substrate 16 is retained and each tether structure 76 may include from top to bottom: the tether conductor 62, the portion where the piezoelectric layer 8 and the tether conductor 62 are vertically aligned, and the optional tether conductor 56 (When there is an optional lower conductive layer 10), and the part where the device layer 12 and the tether conductor 62 are vertically aligned.

Next, referring to FIGS. 9A-9B, in an ideal and non-limiting embodiment or example of UBAR 2 shown in FIG. 3, the device layer 12 and the substrate 16, 16-1 are retained as shown in FIGS. 9A-9B. The base material 16-1 can be seen in the grooves formed on both sides of the tether conductors 62 and 56 of the respective connecting structures 34 and 36. In this example, each tether structure 76 may include from top to bottom: the tether conductor 62, the part where the piezoelectric layer 8 is vertically aligned with the tether conductor 62, and the optional tether conductor 56 (when there is an optional When the conductive layer 10 is underneath), and the part where the device layer 12-1 and the tether conductor 62 are vertically aligned.

In another example, the UBAR 2 shown in FIG. 3, in which the substrate 16 is retained, in FIGS. 9A-9B, the substrate 16 can be seen on both sides of the tether conductors 62 and 56 of the respective connecting structures 34 and 36. In the formed groove, each tether structure 76 may include from top to bottom: a tether conductor 62, a part where the piezoelectric layer 8 is vertically aligned with the tether conductor 62, and an optional tether conductor 56 (when there is an optional The lower conductive layer 10), the vertical alignment of the device layer 12-1 and the tether conductor 62, the vertical alignment of the substrate 16-1 and the tether conductor 62, and the vertical alignment of the device layer 12 and the tether conductor 62 part.

In another example shown in FIG. 9D, in the example of UBAR 2 shown in FIG. 2, the interface between the substrate 16 and the device layer 12 can be removed laterally below the resonator body 4 and the connecting structures 34 and 36 Part of the body of the base material 16 forms a material. As shown in FIG. 9D, the bottoms 64 and 70 of the connecting structures 34 and 36 are exposed, and the bottoms 66 and 68 of the resonator body 4 are exposed. The surfaces 72 and 74 of the body of the substrate 16 are exposed. In this example, the removed part of the base material 16 forming material can extend to the plane of FIG. 9D and the material part of the base material 16 is vertically aligned with each tether structure 76. In this example, each tether structure 76 may include from top to bottom: the tether conductor 62, the part where the piezoelectric layer 8 is vertically aligned with the tether conductor 62, and the optional tether conductor 56 (when there is an optional When the conductive layer 10 is lowered), the part where the device layer 12 and the tether conductor 62 are vertically aligned, and the part where the substrate 16 and the tether conductor 62 are vertically aligned and close to the device layer 12. In this example, surfaces 72 and 74 can be seen in the grooves of Figures 9A-9B.

In another alternative example, in the UBAR 2 example shown in FIG. 3, a part of the forming material of the substrate 16-1 or 16 can be removed laterally below the resonator body 4 and the connecting structures 34 and 36, similar to removing The formation material of the substrate 16 in FIG. 9D, wherein the surface of the formation material of the substrate 16-1 or 16 (such as surfaces 72 and 74) is exposed and can be seen in the grooves of FIGS. 9A-9B.

In one example, when the surface of the forming material of the substrate 16-1 of the UBAR 2 example of FIG. 3 (such as surfaces 72 and 74) is exposed and can be seen in the grooves of FIGS. 9A-9B, each tether structure 76 may also be The part including the device layer 12-1 vertically aligned with the tether conductor 62 and the base material 16-1 forms a portion where the material is vertically aligned with the tether conductor 62 and is close to the device layer 12-1. In this example, only the part of the body of the substrate 16-1 is removed to form the grooves, and the device layer 12 and the substrate 16 are retained, that is, no part of the device layer 12 and the substrate 16 is removed , Not visible in Figures 9A-9B.

In another example, when the forming material surface (such as surfaces 72 and 74) of the substrate 16 in the example of UBAR 2 in FIG. 3 is exposed and can be seen in the grooves shown in FIGS. 9A-9B, each tether structure 76 may also include the portion where the device layer 12-1 is vertically aligned with the tether conductor 62, the portion where the substrate 16-1 is vertically aligned with the tether conductor 62, and the device layer 12 and the tether conductor 62 are vertically aligned. The part of the substrate 16 forming the material is vertically aligned with the tether conductor 62 and is close to the part of the device layer 12. In this example, only the part of the body of the substrate 16-1 is removed to form the grooves.

In an ideal and non-limiting implementation type or example, when there is no lower conductive layer 10 in the previously discussed example, the bottom metal layers 40 and 44 connecting the structures 34 and 36 do not need to be present.

In an ideal and non-limiting implementation type or example, each of the aforementioned tether structures 76 may include at least a tether conductor 62, an optional tether conductor 56 (when the optional lower conductive layer 10 is present), and only The portion of the electrical layer 8 that is vertically aligned with the tether conductor 62. In another ideal and non-limiting implementation type or example, each tether structure 76 may include one or more of the following portions vertically aligned with the tether conductor 62: device layer 12, substrate 16, device layer 12-1 , And/or substrate 16-1. However, it is not restrictive here.

In an ideal and non-limiting implementation type or example, the resonator body 4 in each example shown in FIGS. 1-3 has at least one of the upper conductive layer 6, the optional lower conductive layer 10, and the upper conductive layer 6. The width of the piezoelectric layer 8 may be the same. That is, or, in an example, the width of the device layer 12, the substrate 16, the device layer 12-1, and/or the substrate 16-1 may be the same as the upper conductive layer 6, the optional lower conductive layer 10, and the pressure The width and/or size of the electrical layer 8 are the same.

In an ideal and non-limiting implementation type or example, any one or more surfaces and/or any one or more connecting structures 34 and/or of the resonator body 4 in any example shown in FIGS. 1-3 One or all of the surfaces of 36 can be etched as appropriate and/or desired. It is expected that the quality factor and/or insertion loss of any UBAR 2 example in Figs. 1-3 can be optimized. For example, the upper surface and the lower surface of the resonator body 4 in any of the examples shown in FIGS. 1-3 can be etched. That is, alternatively, any one or more of the side surfaces of the resonator body 4 in the examples shown in FIGS. 1-3 may be etched. Engraved, wherein the aforementioned side is perpendicular to the plane.

In an ideal and non-limiting implementation type or example, the upper conductive layer 6, the optional lower conductive layer 10, or both, are in the form of the interdigital electrode 18. A back 22 of the interdigital electrode 18 is Or 26 may be connected and driven by a suitable signal source, while the other back 22 or 26 may not be connected to the signal source. In another ideal and non-limiting embodiment or example, the upper conductive layer 6, the optional lower conductive layer 10, or both, are in the form of the interdigital electrode 18. A back of the aforementioned interdigital electrode 18 22 can be connected and driven by a signal source, and a back 26 of the aforementioned interdigital electrode 18 can be connected and driven by a second signal source. In an example, the second signal source can be the same or different from the first signal source.

60 x 10⁶Pa-s/m³。在另一個例子中，各裝置層12(或12-1)的例子之聲阻抗可為

90 x 10⁶Pa-s/m³。在另一個例子中，各裝置層12(或12-1)的例子之聲阻抗可為

500 x 10⁶Pa-s/m³。在一個理想及非限制的實施型態或例子中，各基材層16的聲阻抗可為

100 x10⁶Pa-s/m³。在另一個例子中，各基材層16的聲阻抗可為

60 x10⁶Pa-s/m³。 In an ideal and non-limiting implementation type or example, the acoustic impedance of each device layer 12 (or 12-1) example can be

60 x 10 ⁶ Pa-s/m ³ . In another example, the acoustic impedance of each device layer 12 (or 12-1) example can be

90 x 10 ⁶ Pa-s/m ³ . In another example, the acoustic impedance of each device layer 12 (or 12-1) example can be

500 x 10 ⁶ Pa-s/m ³ . In an ideal and non-limiting implementation type or example, the acoustic impedance of each substrate layer 16 can be

100 x10 ⁶ Pa-s/m ³ . In another example, the acoustic impedance of each substrate layer 16 may be

60 x10 ⁶ Pa-s/m ³ .

In an ideal and non-limiting implementation type or example, the acoustic reflectivity (R) of the interface of the device layer 12, the piezoelectric layer 8, or the optional lower conductive layer 10 may be greater than 50%. In another example, the acoustic reflectivity (R) of the interface of the device layer 12, the piezoelectric layer 8, or the optional lower conductive layer 10 may be greater than 70%. In another example, the acoustic reflectivity (R) of the interface of the device layer 12, the piezoelectric layer 8, or the optional lower conductive layer 10 may be greater than 90%.

In an ideal and non-limiting implementation type or example, the acoustic reflectivity (R) of the interface between the device layer 12 or 12-1, the piezoelectric layer 8, or the optional lower conductive layer 10 can be large Less than 70%. In one example, any two layers 6 and 8; 8 and 10; 8 or 10 and 12 or 12-1; or 12 or 12-1 and 16 or 16-1 have an interface reflectivity R, or device layer 12 or 12 The reflectance R of the interface between -1 and the substrate 16 or 16-1 can be calculated by the following equation:

R=｜(Zb-Za)/(Za+Zb)｜

Where Za= the acoustic impedance of the first layer, for example: the piezoelectric layer 8 or the optional lower conductive layer 10, which is located on the second layer; and

Zb=Acoustic impedance of the second layer, for example: device layer 12.

Other examples of the first layer and the second layer may include an example in which the device layer 12 or 12-1 is on the substrate 16 or 16-1.

In an ideal and non-limiting implementation type or example, the overall reflectance (R) of any example of the resonator body 4 shown in FIGS. 1-3 may be >90%.

In an ideal and non-limiting implementation type or example, the device layer 12 may be a diamond layer or SiC formed by the prior art. In one example, the substrate 16 may be formed of silicon.

In an ideal and non-limiting embodiment or example, the device layer 12 formed of diamond can be grown by chemical vapor deposition of diamond on the substrate 16 or 16-1 or a sacrificial substrate (not shown) . In an ideal and non-limiting implementation type or example, the optional lower conductive layer 10, piezoelectric layer 8, and upper conductive layer 6 can be deposited on the device layer 12 and patterned as needed (for example: comb electrode 27 or interdigital electrode 18), the traditional semiconductor manufacturing technology used therefor will not be explained here.

Here, each temperature compensation layer 90, 92, 94 may include at least one of silicon or oxygen. For example, each temperature compensation layer may include silicon dioxide, or silicon element, and/or oxygen element.

100。在另一個例子，圖1-3所示之各UBAR 2可以具有無負載品質因子

50。在一個理想及非限制的實施型態或例子中，圖1-3所示各共振器本體4例子之壓電層8、各裝置層12及基材16的厚度可選擇以任何適合及/或期望的方式，優化共振器本體4的性能。相同地，在一個例子中，圖1-3所示的各例子共振器本體4之尺寸可根據目標性能做選擇，不具限制性地舉例：插入損失、功率承載能力、及熱耗散。在一個理想及非限制的實施型態或例子中，當鑽石作為裝置層12的材料使用時，前述鑽石層的表面在下層12的介面可以用光學方法完成及/或其物理上為密集。在一個例子中，形成裝置層12的鑽石材料可以為未摻雜或摻雜，例如：P型或N型。該鑽石材料可以為多晶體、奈米晶體或超奈米晶體。在一個例子中，當矽用作各基材16例子的材料時，前述矽可以為未摻雜或摻雜，例如：P型或N型，及單晶體或多晶體。形成裝置層的鑽石材料可以有拉曼半高峰寬

20cm^-1。 In an ideal and non-limiting implementation type or example, each UBAR 2 shown in Figures 1-3 can have a no-load quality factor

100. In another example, each UBAR 2 shown in Figures 1-3 can have a no-load quality factor

50. In an ideal and non-limiting implementation type or example, the thickness of the piezoelectric layer 8, each device layer 12, and the substrate 16 of each resonator body 4 example shown in FIGS. 1-3 can be selected to be any suitable and/or The performance of the resonator body 4 is optimized in a desired manner. Similarly, in an example, the size of the resonator body 4 of each example shown in FIGS. 1-3 can be selected according to the target performance, and non-limiting examples: insertion loss, power carrying capacity, and heat dissipation. In an ideal and non-limiting embodiment or example, when diamond is used as the material of the device layer 12, the interface between the surface of the aforementioned diamond layer and the lower layer 12 can be optically completed and/or be physically dense. In an example, the diamond material forming the device layer 12 may be undoped or doped, such as P-type or N-type. The diamond material can be polycrystalline, nanocrystalline or super nanocrystalline. In one example, when silicon is used as the material of each example of the substrate 16, the aforementioned silicon may be undoped or doped, such as P-type or N-type, and single crystal or polycrystalline. The diamond material forming the device layer can have a Raman half-height width

20cm ^-1 .

In an ideal and non-limiting embodiment or example, the piezoelectric layer 8 can be made of ZnO, AlN, InN, alkali metal or alkaline earth metal niobate, alkali metal or alkaline earth metal titanate, alkali metal or alkaline earth metal tantalum Iron ore, GaN, AlGaN, lead zirconate titanate (PZT), polymers or doped types formed from any of the foregoing materials.

In an ideal and non-limiting implementation type or example, the device layer 12 can be formed of any suitable and/or desired high acoustic impedance material. For example: a material with ^{an acoustic impedance between 10 6} Pa-s/m ³ and 630 x 10 ⁶ Pa-s/m ³ or higher than 630 x 10 ⁶ Pa-s/m ³ can be regarded as a high acoustic impedance material . Some non-limiting examples of typical high acoustic impedance materials that can be used, such as forming any of the device layers 12 described herein, may include: diamond (~630 x 10 ⁶ Pa-s/m ³ ); W (~99.7 x 10 ⁶ Pa-s/m ³ ); SiC; a condensed phase material such as metal, such as Al, Pt, Pd, Mo, Cr, Ir, Ti, Ta; elements of group 3A or 4A in the periodic table; 1B in the periodic table , 2B, 3B, 4B, 5B, 6B, 7B or 8B transition elements; ceramics; glass and polymers. This non-limiting list of high acoustic impedance materials is not limited to this.

In an ideal and non-limiting embodiment or example, the substrate 16 can be formed of any suitable and/or desired low acoustic impedance material. For example: a material with ^{an acoustic impedance between 10 6} Pa-s/m ³ and 30 x 10 ⁶ Pa-s/m ³ can be regarded as a low acoustic impedance material. Low acoustic impedance material is typically part of a non-limiting example may be used, for example in the form of either substrate 16 described herein, may comprise at least one of the following: a ceramic; has 10 ⁶ Pa-s / m ³ and 30 x 10 Metal, glass, crystal, minerals with acoustic impedance between ⁶ Pa-s/m ^{3 ; ivory (1.4 x 10 6} Pa-s/m ³ ); alumina/sapphire (25.5 x 10 ⁶ Pa-s/m ³ ); alkali metal K (1.4 x 10 ⁶ Pa-s/m ³ ); silicon dioxide and silicon (19.7 x 10 ⁶ Pa-s/m ³ ). This non-limiting list of low acoustic impedance materials is not limited to this.

In an ideal and non-limiting implementation type or example, depending on the choice of materials for forming the resonator body 4 of each example, one or more materials generally considered to be high acoustic impedance materials can be used as the low sound of the resonator body 4 Resistance material. For example, when diamond or SiC is used as the material of the device layer 12, W may be used as the material of the base material 16. Therefore, by achieving the desired reflectivity R (as described above) for the two-layer interface or resonator body 4, it is possible to determine which materials can serve as high acoustic impedance and which can serve as low acoustic impedance.

In an ideal and non-limiting implementation type or example, the integrated acoustic resonator may include the resonator body 4 according to the principles of the present invention. The resonator body 4 may include a piezoelectric layer 8; a device layer 12; and an upper conductive layer 6, which is located above the piezoelectric layer 8 and the other side of the piezoelectric layer is the device layer 12. The device layer 12 is on the opposite side of the piezoelectric layer 8 The entire surface is essentially used to mount the resonator body 4 on the carrier 14 separated from the resonator body 4. In this example, it is desirable but not necessary for the entire surface of the device layer to be opposite to the piezoelectric layer to be used for mounting the entire resonator body on the carrier. In this example, the desired but not necessary bulk acoustic wave resonator may include the connecting structure 34 or 36 to conduct the signal to the upper conductive layer. In one example, the device layer may include diamond or SiC. In an example, the upper conductive layer 6 may include a plurality of conductive wires or shrapnel containing compartments. In an example, the aforementioned resonator body 4 may further include an optional lower conductive layer 10 located between the piezoelectric layer 8 and the device layer 12.

In an ideal and non-limiting embodiment or example, the resonator body 4 may further include a substrate 16 connected to the aforementioned device layer 12 and the other side of the aforementioned device layer is the aforementioned piezoelectric layer 8. In one example, the entire surface of the aforementioned device layer 12 can be installed into the aforementioned substrate 16. In one example, the entire surface of the substrate 16 facing the aforementioned carrier 14 can be directly mounted into the aforementioned carrier 14.

In an ideal and non-limiting embodiment or example, the entire surface of the device layer 12 facing the carrier 14 can be installed into the substrate 16. In one example, the entire surface of the device layer 12 facing the carrier 14 can be installed into the carrier 14.

In an ideal and non-limiting embodiment or example, the resonator body 4 may further include a second device layer 12-1, which is located between the substrate 16 and the piezoelectric layer 8; or the second substrate 16-1 , Which is located between the substrate 16 and the piezoelectric layer 8; or includes both.

In an ideal and non-limiting implementation type or example, the use of "entire installation" herein can mean directly installing one layer or substrate, or indirectly installing another layer or substrate. In one example, the use of "entire installation" herein can mean or substitute that there is no deliberately reserved space or interval between one layer or substrate and another layer or substrate. In another example, use here "Entire installation" can mean or alternatively include a naturally occurring space between one layer or substrate and another layer or substrate, which is naturally generated and not deliberately manufactured.

Some non-limiting implementation types or examples of UBAR have been described, and the first to sixth UBAR examples will be described here.

The first UBAR example: a mode 3 and or mode 4 with a device layer that resonates and has a temperature compensation layer.

1, in some non-limiting implementation types or examples, a first example of UBAR2 (as shown in FIG. 1) may include a conductive wire or shrapnel 20 or 28 that includes compartments from the top to the carrier 14 The upper conductive layer 6 (shown in FIGS. 4A to 4B), the piezoelectric layer 8 formed of _{LiNbO 3 , the temperature compensation layer 92 formed of SiO 2} and the device layer 12 formed of diamond or SiC. In one example, the finger pitch 38 (shown in FIGS. 4A to 4B) is 0.6 μm and the thickness of the piezoelectric layer 8 is 0.6 μm.

Throughout the present invention, the value of the variable “λ” can be based on one or more dimensions of the pattern or feature defined by the upper conductive layer 6 or based on the thickness of the piezoelectric layer 8. In some non-limiting embodiments or examples, the λ value can be 2 times the pitch 38 or 2 times the thickness of the piezoelectric layer 8 (in this example, 1.2 μm). However, this should not be construed as restrictive, because the value of λ can be based on the thickness of one or more layers and/or any other suitable and/or specific features of one or more patterns or features in each UBAR example described herein. The desired size. In this example, the cutting angle of the piezoelectric layer 8 is 0° (or 180°), which is sometimes called Y cutting or YX cutting. In some non-limiting embodiments or examples, it is expected that the cutting angle of the piezoelectric layer 8 is 0° (or 180°) ± 20°. Here, unless otherwise specified, the cutting angle of the piezoelectric layer 8 refers to the cutting angle rotated with respect to the X axis.

In some non-limiting embodiments or examples, in order to mold the first UBAR2 example, for multiple or multiple different exemplary values of the thickness of the temperature compensation layer 92 formed _{by SiO 2, in the first UBAR2 example} Perform an exemplary electrical stimulation frequency scan (e.g., 1 GHz to 6.2 GHz) to confirm the frequency response (frequency vs. Zhenfu). In a mold example, the _{thickness of the temperature compensation layer 92 formed by SiO 2} is between (9/16)λ and (1/64)λ. In each of the different thickness values, an exemplary electrical stimulation frequency is performed in the first UBAR2 example It is at least between 1GHz and 6.2GHz. In one example, a frequency sweep between at least 1 GHz and 6.2 GHz can determine the thickness of the temperature compensation layer 92, such as the first graph, graph or relationship of the frequency of (9/16)λ vs. Zhenfu. In one example, a frequency sweep between at least 1 GHz and 6.2 GHz can determine another graph, graph, or relationship of the temperature compensation layer 92 thickness, such as the frequency of (3/64)λ vs. Zhenfu. A frequency sweep at different thicknesses of the temperature compensation layer 92 can determine a graph, graph, or relationship of additional frequency vs. vibration.

At least mode 4 resonance frequency 88 (Figures 10 and 11) is observed in the graphs, graphs or relationships of each frequency vs. Zhenfu. In the first UBAR example, however, the mode 4 resonant frequency 88 (Figure 11) was unexpectedly observed at 5.2 GHz, as opposed to the mode 4 resonant frequency 88 (Figure 10) observed at 3.05 GHz, and the mode 3 resonance was observed at 3.13 GHz. Frequency 86 (Figure 11).

In FIG. 11, the resonance frequencies 82 and 84 of mode 1 and mode 2 (as shown in FIG. 10) are omitted to the left of the resonance frequency 86 of mode 3 for the sake of simplicity. However, it should be understood that when the frequency sweep is between at least 1 GHz and 6.2 GHz, in addition to the resonant frequencies 86 and 88 of mode 3 and mode 4, there can also be resonant frequencies 82 and 84 of mode 1 and mode 2 (as shown in Figure 10). Show).

In some non-limiting implementation types or examples, as shown in Figure 11, in the frequency vs. Zhenfu graphs, diagrams, or relationships, the mode 3 resonance frequency 86 includes a positive peak f _s1 and a negative peak f _p1 , the mode 4 The resonance frequency 88 includes a positive peak f _s2 and a negative peak f _p2 .

For illustrative purposes, the "approximately""resonancefrequency" observed at a specific frequency described here, for mode 3, the resonance frequency 86 can be any representative frequency of the positive peak f _s1 and the negative peak f _p1 . For the mode 4 The resonance frequency 88 may be any representative value of the positive peak f _s2 and the negative peak f _p2. Therefore, any resonance frequency "approximately" a specific frequency described herein should not be limited.

In some non-limiting embodiments or examples, when _{the thickness of the temperature compensation layer 92 formed by SiO 2} is (1/16)λ, the mode 3 coupling efficiency ( M3CE) and Mode 4 coupling efficiency (M4CE) can be determined by the following equations EQ1 and EQ2, respectively:

EQ1: Mode 3 coupling efficiency (M3CE)=(π ² /4)(( f _p1 - f _s1 )/ f _p1 )

EQ2: Mode 4 coupling efficiency (M4CE)=(π ² /4)(( f _p2 - f _s2 )/ f _p2 )

Wherein, when the exemplary values of f _p1 and f _s1 are 3.738 GHz and 3.13 GHz, respectively, M3CE=40.093%; and

When the exemplary values of f _p2 and f _s2 are 5.442 GHz and 5.172 GHz, respectively, M4CE=12.229%.

8%、

11%、

14%、

17%或

20%為可令人滿意、適合及/或所期望的，此例中前述M3CE值不應具有限制性。此外或取代性地，因M4CE之值

3%、

4%、

6%、

8%或

10%為可令人滿意、適合及/或所期望的，此例中前述M4CE值不應具有限制性。 However, due to the value of M3CE

8%,

11%,

14%,

17% or

20% is satisfactory, suitable and/or desired. In this example, the aforementioned M3CE value should not be restrictive. Additionally or alternatively, due to the value of M4CE

3%,

4%,

6%,

8% or

10% is satisfactory, suitable and/or desired. In this example, the aforementioned M4CE value should not be restrictive.

8%、

11%、

14%、

17%或

20%時，則壓電層8之切割角度可以延伸超過上述0°(或180°)±20°，例如：切割角度為0°(或180°)

±20°、

±30°、

±40°、

±50°等。在部分非限制性的實施型態或例子中，壓電層8不具限制性例如為LiNbO₃晶體，生產自Z切割或X切割之期望的切割角度亦可能足以得到M3CE之特定期望值。 In some non-limiting implementation types or examples, when a specific M3CE value is expected such as

8%,

11%,

14%,

17% or

At 20%, the cutting angle of the piezoelectric layer 8 can extend beyond the above 0° (or 180°) ± 20°, for example: the cutting angle is 0° (or 180°)

±20°,

±30°,

±40°,

±50° etc. In some non-limiting embodiments or examples, the piezoelectric layer 8 is not limited, for example, LiNbO ₃ crystal, and the desired cutting angle produced from Z-cut or X-cut may also be sufficient to obtain the specific desired value of M3CE.

3%、

4%、

6%、

8%或

10%時，則壓電層8之切割角度可以延伸超過上述130°±30°(有時稱作Y切割130±30或YX切割130±30)，例如切割角度為：130°

±30°、

±40°、

±50°等。在部分非限制性的實施型態或例子中，壓電層8不具限制性例如LiNbO₃晶體，生產自Z切割或X切割之期望的切割角度亦可能足以得到M4CE之特定期望值。 In some non-limiting implementation types or examples, when a specific M4CE value is expected such as

3%,

4%,

6%,

8% or

At 10%, the cutting angle of the piezoelectric layer 8 can extend beyond the above 130°±30° (sometimes called Y cutting 130±30 or YX cutting 130 ± 30), for example, the cutting angle is: 130°

±30°,

±40°,

±50° etc. In some non-limiting embodiments or examples, the piezoelectric layer 8 is not limited, such as LiNbO ₃ crystal, and the desired cutting angle produced from Z-cut or X-cut may also be sufficient to obtain the specific desired value of M4CE.

1λ、

(1/2)λ、

(3/8)λ、

(1/4)λ或

(1/8)λ，該厚度值不應具有限制性。 In some non-limiting implementation types or examples, the equations EQ1 and EQ2 and the above-determined frequency vs. vibration chart, graph or relationship are used to obtain multiple thickness values of the temperature compensation layer 92, which are determined by SiO ₂ The thickness values of the formed temperature compensation layer 92 and used to optimize the resonance frequencies of mode 3 and mode 4 are determined as (3/64)λ and (1/32)λ, respectively. However, the _{thickness of the temperature compensation layer 92 formed by SiO 2} can be any suitable and/or desired and non-limiting thickness, such as

1λ,

(1/2)λ,

(3/8)λ,

(1/4)λ or

(1/8)λ, the thickness value should not be restrictive.

The second UBAR example: a mode 3 and or mode 4 of the device layer is resonant and does not have a temperature compensation layer.

In some non-limiting implementation types or examples, for comparison and/or modeling purposes, an exemplary electrical stimulation frequency scan (for example: 1GHz to 6.2GHz) is performed in the second UBAR2 example to confirm the frequency response. The layers of the UBAR2 example are similar to the first UBAR2 example (as shown in FIG. 1), except that the second UBAR2 example does not include the temperature compensation layer 92. Perform a frequency scan to confirm the frequency vs. Zhenfu chart, graph, or relationship.

Using equations EQ1 and EQ2 and frequency scanning to confirm the frequency vs. Zhenfu chart, graph or relationship, the coupling efficiency M3CE and M4CE of the mode 3 and mode 4 resonance frequencies 86 and 88 of the second UBAR2 example can be confirmed as:

When _{the values of f p1} and f _s1 are 3.738GHz and 3.13GHz respectively, M3CE=40.093%;

When _{the values of f p2} and f _s2 are 6.194 GHz and 5.96 GHz, respectively, M4CE=9.312%.

8%、

11%、

14%、

17%或

20%為可令人滿意、適合及/或所期望的，此例之前述M3CE值不應具有限制性。此外或取代性地，因M4CE值

3%、

4%、

6%、

8%或

10%為可令人滿意、適合及/或所期望的，此例之前述M4CE值不應具有限制性。 However, due to the M3CE value

8%,

11%,

14%,

17% or

20% is satisfactory, suitable and/or desired. The aforementioned M3CE value in this example should not be restrictive. Additionally or alternatively, due to the M4CE value

3%,

4%,

6%,

8% or

10% is satisfactory, suitable and/or desired. The aforementioned M4CE value in this example should not be restrictive.

8%、

11%、

14%、

17%或

20%，壓電層8之切割角度可延伸超過前述切割角度0°(或180°)±20°，例如切割角為0°(或180°)

±20°、

±30°、

±40°、

±50°等。在部分非限制性的實施型態或例子，壓電層8不具限制性的例如為LiNbO₃晶體，生產自Z切割或X切割的期望切割角度亦可能得到期望的特定M3CE值。 In some non-limiting implementation types or examples, when a specific M3CE value is expected, for example

8%,

11%,

14%,

17% or

20%, the cutting angle of the piezoelectric layer 8 can extend beyond the aforementioned cutting angle 0° (or 180°) ± 20°, for example, the cutting angle is 0° (or 180°)

±20°,

±30°,

±40°,

±50° etc. In some non-limiting embodiments or examples, the piezoelectric layer 8 is not limited, for example, LiNbO ₃ crystal, and the desired cutting angle produced from Z-cut or X-cut may also obtain the desired specific M3CE value.

3%、

4%、

6%、

8%或

10%，壓電層8之切割角度可以延伸超過130°±30°(有時稱作Y切割130±30或YX切割130±30)，例如切割角度為：130°

±30°、

±40°、

±50°等。在部分非限制性的實施型態或例子中，壓電層8不具限制性例如LiNbO₃晶體，生產自Z切割或X切割之期望的切割角度亦可能足以得到M4CE之特定期望值。 In some non-limiting implementation types or examples, when a specific M4CE value is expected, for example

3%,

4%,

6%,

8% or

10%, the cutting angle of the piezoelectric layer 8 can extend beyond 130°±30° (sometimes called Y cutting 130±30 or YX cutting 130 ± 30), for example, the cutting angle is 130°

±30°,

±40°,

±50° etc. In some non-limiting embodiments or examples, the piezoelectric layer 8 is not limited, such as LiNbO ₃ crystal, and the desired cutting angle produced from Z-cut or X-cut may also be sufficient to obtain the specific desired value of M4CE.

From UBAR2 with and without M4CE value of the temperature compensation layer 92 may be understood UBAR2 has a temperature compensating layer 92 of SiO ₂ is formed, a larger coupling efficiency, conversely, UBAR2 having no temperature compensation is formed of SiO ₂ When layer 92 is used, its coupling efficiency is relatively small. In some non-limiting implementation types or examples, generally speaking, it is more desirable to obtain a greater value of coupling efficiency.

The third UBAR example: a mode 3 and or mode 4 that enables the device layer to resonate and has a temperature compensation layer and an aluminum nitride layer.

Referring to Figure 12 and continuing to refer to Figure 11, in some non-limiting embodiments or examples, for comparison and/or modeling purposes, an exemplary electrical stimulation is performed in the third UBAR2 example (shown in Figure 12) Frequency scan (for example: 1GHz to 6.2GHz) to confirm the frequency response, the third UBAR2 example is similar to the above-mentioned first UBAR2 example in every aspect, except that the third UBAR2 is at least the following: That is, the third UBAR2 example is made of diamond or A layer of aluminum nitride AlN 96 is included between the device layer 12 formed of SiC and _{the temperature compensation layer 92 formed of SiO 2.} The temperature compensation layer 92 is on the aluminum nitride layer 96 (as shown in FIG. 12). The thickness of the aluminum layer 96 is (7/16)λ, the thickness of _{the temperature compensation layer 92 formed of SiO 2} is (11/128)λ, and the thickness of the device layer 12 formed of diamond or SiC is (90/16)λ. In this example, λ corresponds to 1.6 μm. Then perform a frequency scan to confirm the frequency vs. Zhenfu chart, graph, or relationship.

Using equations EQ1 and EQ2 and the frequency vs. Zhenfu chart, graph or relationship confirmed by frequency sweep, the coupling efficiency M3CE and M4CE of the resonance frequencies 86 and 88 of the mode 3 and mode 4 of the third UBAR2 example in Figure 12 are confirmed as :

When _{the values of f p1} and f _s1 are 3.608GHz and 3.032GHz respectively, M3CE=39.351%;

When _{the values of f p2} and f _s2 are 5.02GHz and 4.8GHz, respectively, M4CE=10.802%.

8%、

11%、

14%、

17%或

20%可為令人滿意的、適合及/或所期望的。此外或取代性地，此例中前述的M4CE值不具有限制性，因M4CE

3%、

4%、

6%、

8%或

10%可為令人滿意的、適合及/或所期望的。 However, the aforementioned M3CE value in this example is not restrictive, because M3CE

8%,

11%,

14%,

17% or

20% may be satisfactory, suitable and/or desired. Additionally or alternatively, the aforementioned M4CE value in this example is not restrictive, because M4CE

3%,

4%,

6%,

8% or

10% may be satisfactory, suitable, and/or desired.

8%、

11%、

14%、

17%或

20%，壓電層8之切割角度可延伸超過前述切割角度0°(或180°)±20°，例如切割角為0°(或180°)

±20°、

±30°、

±40°、

±50°等。在部分非限制性的實施型態或例子，壓電層8不具限制性的例如為LiNbO₃晶體，生產自Z切割或X切割的期望切割角度亦可能得到期望的特定M3CE值。 In some non-limiting implementation types or examples, when a special M3CE value is expected such as

8%,

11%,

14%,

17% or

20%, the cutting angle of the piezoelectric layer 8 can extend beyond the aforementioned cutting angle 0° (or 180°) ± 20°, for example, the cutting angle is 0° (or 180°)

±20°,

±30°,

±40°,

±50° etc. In some non-limiting embodiments or examples, the piezoelectric layer 8 is not limited, for example, LiNbO ₃ crystal, and the desired cutting angle produced from Z-cut or X-cut may also obtain the desired specific M3CE value.

3%、

4%、

6%、

8%或

10%，壓電層8之切割角度可以延伸超過130°±30°(有時稱作Y切割130±30或YX切割130±30)，例如切割角度為：130°

±30°、

±40°、

±50°等。在部分非限制性的實施型態或例子中，壓電層8不具限制性例如LiNbO₃晶體，生產自Z切割或X切割之期望的切割角度亦可能足以得到M4CE之特定期望值。 In some non-limiting implementation types or examples, when a specific M4CE value is expected, for example

3%,

4%,

6%,

8% or

10%, the cutting angle of the piezoelectric layer 8 can extend beyond 130°±30° (sometimes called Y cutting 130±30 or YX cutting 130±30), for example, the cutting angle is: 130°

±30°,

±40°,

±50° etc. In some non-limiting embodiments or examples, the piezoelectric layer 8 is not limited, such as LiNbO ₃ crystal, and the desired cutting angle produced from Z-cut or X-cut may also be sufficient to obtain the specific desired value of M4CE.

In the above-mentioned first to third examples, confirm the UBARs, M3CE and M4CE values of the piezoelectric layer 8 formed by _{LiNbO 3 crystal cut at 0° (or 180°).} In some non-limiting embodiments or examples, the applicant found that _{the piezoelectric layer 8 formed by LiNbO 3} crystals can be cut at 130° (sometimes called YX cut 130° or Y cut 130°) to enhance or optimize the pattern 4 Coupling efficiency M4CE at resonance frequency 88. In an example, _{the cutting angle of the piezoelectric layer 8 formed by LiNbO 3} crystal may be 130°±30°, for example, in the range of 100° to 160°; ideally 130°±20°, for example, 110° To 150°; the most ideal is 130°±10°, for example, in the range of 120° to 140°. However, this ± value or range is not restrictive.

In addition, in some non-limiting embodiments or examples, the applicant found that when UBAR2 is formed, the piezoelectric layer 8 (which is formed of LiNbO ₃ crystals and is formed at about 130°(±30°, or ±20°, Or ±10°) angle cutting) and the device layer 12 (when the substrate 16 is omitted) or the substrate 16 (when the device layer 12 is omitted) or both the device layer 12 and the substrate 16 have alternating low The high acoustic impedance layer can enhance or optimize the coupling efficiency M4CE of the mode 4 resonance frequency 88. In some non-limiting embodiments or examples, UBAR2 has alternating low and high acoustic resistance layers. It may include a device layer 12 formed of diamond, SiC, W, Ir or AlN and a substrate formed of silicon. 16. In some non-limiting embodiments or examples, UBAR2 has alternating low and high acoustic impedance layers. The substrate 16 may be made of silicon, but the device layer 12 may be excluded.

Fourth UBAR example: A stack-enabled flexural mode (mode 4) includes at least one low acoustic resistance layer and one high acoustic resistance layer, and optionally one device layer.

Referring to FIG. 13 and continuing to refer to FIG. 11, in some non-limiting embodiments or examples, a fourth UBAR2 example (as shown in FIG. 13) is composed of alternating low and high acoustic resistance material layers, which may include : Between the piezoelectric layer 8 (formed of LiNbO ₃ crystal and cut at an angle of about 130° (±30°, ±20°, ±10°)) and the (optional) device layer 12 or substrate 16, It has a first low acoustic resistance layer 100, a first high acoustic resistance layer 102, a second low acoustic resistance layer 104, a second high acoustic resistance layer 106, and a third low acoustic resistance layer 108. In this example, the conductive wires or shrapnel 20 or 28 (as shown in FIGS. 4A and 4B) in the upper conductive layer 6 have a finger pitch 38 of 1.2 μm, a λ value of 2.4 μm, and a piezoelectric layer thickness of λ /2. If there is a device layer 12, the thickness is 4λ, and the thickness of the substrate 16 is 20 μm. In this example, for the purpose of molding, the cutting angle of the piezoelectric layer 8 may be 100° to 160°.

In some non-limiting embodiments or examples, each low acoustic resistance layer 100, 104, and 108 can be formed from silicon dioxide (SiO ₂ ), and each high acoustic resistance layer 102 and 106 can be formed from a metal, such as Tungsten (W), the device layer 12 can be formed from diamond or SiC, and the substrate 16 can be formed from silicon. In an example, the device layer 12 is optional, and the third low acoustic resistance layer 108 may directly contact the substrate 16 and the second high acoustic resistance layer 106.

In some non-limiting implementation types or examples, for the purpose of modeling, an exemplary electrical stimulation frequency scan (for example: 1GHz to 6.2GHz) is performed in several fourth UBARs 2 examples to confirm the frequency response (frequency vs. . Amplitude), with and without the device layer 12, multiple different cutting angles from 100° to 160° in the piezoelectric layer 8, and different exemplary thicknesses of the low acoustic resistance layer 100, 104, and 108 , The different exemplary thicknesses of the high acoustic resistance layers 102 and 106 are, for example, performed in the manner of the aforementioned first UBAR2. In other words, perform an exemplary electrical stimulation frequency scan (for example: 1GHz to 6.2GHz) in several fourth UBARs 2 examples to confirm the frequency response (frequency vs. amplitude). The aforementioned UBARs 2 examples have different combinations: (1) With or without the device layer 12; (2) the piezoelectric layer 8 has multiple different cutting angles from 100° to 160°; (3) the different thicknesses of the low sound resistance layer 100, 104 and 108; (4) The high acoustic resistance layers 102 and 106 have different thicknesses.

In some non-limiting embodiments or examples, each cutting angle of the piezoelectric layer 8 and the thickness of each low acoustic resistance layer 100, 104, and 108 are set at the same value (the first value), and each high acoustic resistance The thicknesses of the resist layers 102 and 106 are set at the same value (the second value). In the fourth UBARs 2 example, perform an exemplary electrical stimulation frequency scan, such as 1 GHz to 6.2 GHz, and record the scan frequency of the fourth UBARs 2 example reaction. Next, only change the thickness of the low sound resistance layer (the first Value) or the thickness of the high acoustic resistance layer (the second value), repeat the frequency scan, and record the response frequency of the fourth UBARs 2 example. In order to characterize the frequency response of different thickness values of the low acoustic resistance layer and the high acoustic resistance layer of the fourth UBARs 2 example, the process was repeated several times for different thickness values of the low acoustic resistance layer and the high acoustic resistance layer. In some non-limiting embodiments or examples, the different thickness values of the low acoustic resistance layer and/or the high acoustic resistance layer may be the same or different. In some non-limiting embodiments or examples, diamond, SiC, W, Ir, AlN, etc. can be used as high acoustic resistance materials. Confirm the graph, graph, or relationship of frequency vs. amplitude in each frequency scan.

Using the frequency sweep of the equation EQ2 and the fourth example of UBAR2 to confirm the frequency vs. amplitude chart, graph, or relationship, the ideal coupling efficiency M4CE of the mode 4 resonance frequency 88 of the fourth example of UBAR2 in Fig. 13 has and does not With the device layer 12:

When f _p2 and f _s2 are 5.43GHz and 5.08GHz respectively, M4CE=15.888%

For example: the cutting angle of the piezoelectric layer 8 is 130°, the thickness of each low acoustic resistance layer 100, 104, 108 is (1/16)λ, and the thickness of each high acoustic resistance layer 102, 106 is (1/16)λ .

3%、

4%、

6%、

8%或

10%可為令人滿意、適合的及/或所期望的，此例中前述M4CE值不應具有限制性。在一個例子中，M4CE值

3%、

4%、

6%、

8%或

10%可以藉由調整壓電層8之切割角度±一個適合及/或所期望的值如前述之130°±30°而達成。在部分非限制的實施型態及例子中，壓電層8不具限制性的如LiNbO₃晶體產自Z切割或X切割的期望切割角度亦可能得到期望的特定M4CE值。 Due to M4CE value

3%,

4%,

6%,

8% or

10% may be satisfactory, suitable and/or desired. In this example, the aforementioned M4CE value should not be restrictive. In one example, the M4CE value

3%,

4%,

6%,

8% or

10% can be achieved by adjusting the cutting angle of the piezoelectric layer 8 ± a suitable and/or desired value such as 130° ± 30° mentioned above. In some non-limiting embodiments and examples, the piezoelectric layer 8 is not limited, such as LiNbO ₃ crystals produced from Z-cut or X-cut. The desired cutting angle may also obtain the desired specific M4CE value.

1λ、

(1/2)λ、

(3/8)λ、

(1/4)λ或

(1/8)λ。各低聲抗阻層及/或各高聲抗阻層之厚度可與任一其他低聲抗阻層及/或各高聲抗阻層之厚度不同(或相同)。因此，在此低聲抗阻層之厚度相同、高聲抗阻層之厚度相同或低聲抗阻層之厚度與高聲抗阻層之厚度相同時皆不具有限制性。 In addition, the aforementioned thickness of each low acoustic resistance layer and/or each high acoustic resistance layer should not be restrictive, because the aforementioned thickness of each low acoustic resistance layer and/or each high acoustic resistance layer may be suitable and / Or the desired thickness, without limitation, for example

1λ,

(1/2)λ,

(3/8)λ,

(1/4)λ or

(1/8)λ. The thickness of each low acoustic resistance layer and/or each high acoustic resistance layer may be different (or the same) from the thickness of any other low acoustic resistance layer and/or each high acoustic resistance layer. Therefore, there is no limitation when the thickness of the low acoustic resistance layer is the same, the thickness of the high acoustic resistance layer is the same, or the thickness of the low acoustic resistance layer is the same as the thickness of the high acoustic resistance layer.

Fifth UBAR example: a stack-enabled flexural mode (mode 4) includes at least one low acoustic resistance layer and one high acoustic resistance layer, and optionally one device layer.

Continuing to refer to FIGS. 11 and 13, in some non-limiting implementation types or examples, similar to the type of the fourth UBAR 2 example described above, for each of the piezoelectric layer 8 from 100° to 160° For different cutting angles, for the purpose of molding, perform an exemplary electrical stimulation frequency scan (for example: 1GHz to 6.2GHz) on the different thickness values of the low acoustic resistance layer and the high acoustic resistance layer of the fifth UBAR 2 example to confirm Frequency response (frequency vs. amplitude), the foregoing fifth UBAR 2 example is similar to the foregoing fourth UBAR 2 example at all levels (as shown in FIG. 13) except for the following: that is, the low acoustic impedance layer 108 is omitted. Confirm the graph, graph, or relationship of frequency vs. amplitude in each frequency scan.

Using equation EQ2 and the graph, graph, or relationship of frequency vs. amplitude confirmed in the fifth UBAR2 example, the ideal coupling efficiency M4CE of the mode 4 resonance frequency 88 of the fifth UBAR 2 example with and without the device layer 12 It is consistent with the fourth UBAR 2 example, that is:

When f _p2 and f _s2 are 5.43 GHz and 5.08 GHz, respectively, M4CE=15.888%.

When the cutting angle of the piezoelectric layer 8 is 130°, the thickness of each low sound resistance layer 100 and 104 is (1/16)λ, the thickness of each high acoustic resistance layer 102 and 106 is (1/16)λ.

In some non-limiting embodiments or examples, the thickness of each low acoustic resistance layer and/or the thickness of each high acoustic resistance layer may be the same or different. In some non-limiting embodiments or examples, diamond, SiC, W, AlN, Ir, etc. can be used as the material of each high acoustic resistance layer.

3%、

4%、

6%、

8%或

10%時為令人滿意的、適合的及/或所期望的，此例中前述M4CE值不應具有限制性。在一個例子中，M4CE值

3%、

4%、

6%、

8%或

10%可以藉由調整壓電層8之切割角度±一個適合及/或期望的值而達成，如前述130°±30°。在部分非限制性的實施型態或例子中，壓電層8例如為不具限制性的LiNbO₃晶體，產自Z切割或X切割之切割角度亦可能得到所期望的特定M4CE值。 Because of M4CE value

3%,

4%,

6%,

8% or

10% is satisfactory, suitable and/or expected. In this example, the aforementioned M4CE value should not be restrictive. In one example, the M4CE value

3%,

4%,

6%,

8% or

10% can be achieved by adjusting the cutting angle of the piezoelectric layer 8 ± a suitable and/or desired value, such as 130° ± 30° described above. In some non-limiting embodiments or examples, the piezoelectric layer 8 is, for example, an unrestricted LiNbO ₃ crystal, and the cutting angle produced by Z-cut or X-cut may also obtain the desired specific M4CE value.

1λ、

(1/2)λ、

(3/8)λ、

(1/4)λ或

(1/8)λ，各低及/或高聲抗阻層之厚度可能與任一其他低及/或高聲抗阻層之厚度不同或相同。因此，在此低聲抗阻層之厚度相同、高聲抗阻層之厚度相同或低聲抗阻層之厚度與高聲抗阻層之厚度相同時皆不具有限制性。 In addition, the thickness of the aforementioned low acoustic resistance layer and/or each high acoustic resistance layer should not be restrictive, because the thickness of each low acoustic resistance layer and/or each high acoustic resistance layer can be ideally and/or Expectation and unrestricted

1λ,

(1/2)λ,

(3/8)λ,

(1/4)λ or

(1/8)λ, the thickness of each low and/or high sound resistance layer may be different or the same as any other low and/or high sound resistance layer. Therefore, there is no limitation when the thickness of the low acoustic resistance layer is the same, the thickness of the high acoustic resistance layer is the same, or the thickness of the low acoustic resistance layer is the same as the thickness of the high acoustic resistance layer.

This result indicates that there may be some advantages in having one or more additional low-acoustic resistance layers between the high-acoustic resistance layer 106 and the device layer 12 or the substrate 16 or both.

The sixth UBAR example: a stack-enabled flexural mode (mode 4) includes at least one low acoustic resistance layer and one high acoustic resistance layer, and optionally one device layer. Referring to FIG. 14 and continuing to refer to FIG. 11, in some non-limiting implementation types or examples, the sixth example of UBAR 2 (shown in FIG. 14) is formed from alternating low and high acoustic resistance layer materials, which are derived from the piezoelectric layer 8 (Formed from LiNbO ₃ crystal, with a cutting angle of 130° (±30° or ±20° or ±10°)) to the device layer 12 may include: a first low acoustic resistance layer 100, a first high acoustic resistance layer 102. The second low sound resistance layer 104, the second high sound resistance layer 106, the third low sound resistance layer 108, the third high sound resistance layer 110, the fourth low sound resistance layer 112, the fourth high Acoustic resistance layer 114, fifth low acoustic resistance layer 116, fifth high acoustic resistance layer 118, sixth low acoustic resistance layer 120, sixth high acoustic resistance layer 122, seventh low acoustic resistance layer 124 , The seventh high acoustic resistance layer 126, the eighth low acoustic resistance layer 128, the eighth high acoustic resistance layer 130, and the ninth low acoustic resistance layer 132.

In this example, the conductive wires or shrapnel 20 or 28 (as shown in Figures 4A and 4B) in the upper conductive layer 6 have a finger pitch 38 of 1.2μm, a λ value of 2.4μm, and a piezoelectric layer thickness of ( 0.2)λ, the thickness of each low sound resistance layer is (1/16)λ and the thickness of the device layer 12 is 4λ.

In order to mold the sixth UBAR 2 example from 100° to 160° cutting angles according to the number of different piezoelectric layers 8, perform an exemplary electrical stimulation frequency scan (for example: 1GHz to 6.2GHz) in the sixth UBARs 2 example to confirm The frequency response is performed in the different exemplary thicknesses of the high acoustic impedance layer, for example, in the manner of the fourth UBAR2 described above. In this example, for each piezoelectric layer 8 cutting angle and each frequency scan, each high-acoustic resistance layer has the same thickness. Confirm the graph, graph, or relationship of frequency vs. amplitude in each frequency scan.

In some non-limiting embodiments or examples, each low acoustic resistance layer can be formed from silicon dioxide (SiO ₂ ), and each high acoustic resistance layer can be formed from, for example, aluminum nitride (AlN). The device layer 12 It can be formed from diamond or SiC and the substrate 16 can be formed from silicon.

Use equation EQ2 and the chart, graph or relationship of the frequency response confirmed in the sixth UBAR 2 example, the ideal coupling effect of the mode 4 resonance frequency 88 of the sixth UBAR 2 example The rate of M4CE can be confirmed as:

When the values of f _p2 and f _s2 are equal to 5.38GHz and 5.09GHz respectively, M4CE=13.287%,

When the piezoelectric layer 8 has a cutting angle of 130°, it is 130° and the thickness of each high acoustic resistance layer is (5/16)λ.

In some non-limiting embodiments or examples, the thickness of each low acoustic resistance layer and/or high acoustic resistance layer may be the same or different. In some non-limiting embodiments or examples, diamond, SiC, W, AlN, etc. can be used as the material of each high acoustic resistance layer.

3%、

4%、

6%、

8%或

10%時為令人滿意的、適合的及/或所期望的，此例中前述M4CE值不應具有限制性。此外，前述各低聲抗阻層及/或各高聲抗阻層之厚度不應具有限制性，因各低聲抗阻層及/或各高聲抗阻層之厚度可為適合的及/或所期望、不具限制性

1λ、

(1/2)λ、

(3/8)λ、

(1/4)λ或

(1/8)λ，各低及/或高聲抗阻層之厚度可與任一其他各低及/或高聲抗阻層之厚度不同(或相同)。因此，在此低聲抗阻層之厚度相同、高聲抗阻層之厚度相同或低聲抗阻層之厚度與高聲抗阻層之厚度相同皆不具有限制性。 Because of M4CE value

3%,

4%,

6%,

8% or

10% is satisfactory, suitable and/or expected. In this example, the aforementioned M4CE value should not be restrictive. In addition, the thickness of the aforementioned low-sound resistance layer and/or each high-sound resistance layer should not be restrictive, because the thickness of each low-sound resistance layer and/or each high-sound resistance layer can be suitable and/or Or expected, not restrictive

1λ,

(1/2)λ,

(3/8)λ,

(1/4)λ or

(1/8)λ, the thickness of each low and/or high sound resistance layer can be different (or the same) as any other low and/or high sound resistance layer. Therefore, the same thickness of the low acoustic resistance layer, the same thickness of the high acoustic resistance layer, or the same thickness of the low acoustic resistance layer and the same thickness of the high acoustic resistance layer are not restrictive.

3%、

4%、

6%、

8%或

10%可以藉由調整壓電層8之切割角度±一個適合及/或期望的值而達成，例如前述130°±30°。在部分非限制性的實施型態或例子中，壓電層8不具限制性的例如LiNbO₃晶體，並以Z切割或X切割之特定角度切割，亦可得到特定期望的M4CE值。 In one example, the M4CE value

3%,

4%,

6%,

8% or

10% can be achieved by adjusting the cutting angle of the piezoelectric layer 8 ± a suitable and/or desired value, such as the aforementioned 130° ± 30°. In some non-limiting embodiments or examples, the piezoelectric layer 8 is non-limiting, such as LiNbO ₃ crystal, and is cut at a specific angle of Z-cut or X-cut to obtain a specific desired M4CE value.

In some non-limiting implementation types or examples, the molds of the aforementioned first to sixth UBARs 2 examples are represented by computer simulations. In some cases, in one or more real International paradigm said.

In some non-limiting embodiments or examples, it can be learned from the first to sixth UBARs 2 examples described above that _{the piezoelectric layer 8 formed from LiNbO 3} and cut at an angle of 130° or approximately can obtain the ideal M4CE. value. However, in some non-limiting embodiments or examples, _{the piezoelectric layer 8 formed from LiNbO 3} and cut at an angle of 100° to 160° can also obtain the ideal M4CE value; the piezoelectric layer 8 _{formed from LiNbO 3} And cutting at an angle of 110° to 150° can obtain a more ideal M4CE value; _{the piezoelectric layer 8 formed from LiNbO 3} and cutting at an angle of 120° to 140° can further obtain a more ideal M4CE value. However, the piezoelectric layer 8 formed from LiNbO ₃ and cut at an angle of 130° can obtain the ideal (highest) M4CE value.

0.5λ、

0.4λ、

0.3λ或

0.2λ。 In any UBAR example described here, _{the thickness of the piezoelectric layer such as LiNbO 3} can be any suitable and/or desired thickness. For example, in the flexural mode example of Mode 4, the thickness is

0.5λ,

0.4λ,

0.3λ or

0.2λ.

2λ、

1.6λ、

1.2λ或

0.8λ。 In any UBAR example described here, _{the thickness of the piezoelectric layer such as LiNbO 3} can be any suitable and/or desired thickness. For example, in the shear mode example of Mode 3, the thickness is

2λ,

1.6λ,

1.2λ or

0.8λ.

0.010λ、

0.013λ、

0.016λ、

0.019λ或

0.022λ。 For any UBAR example described here, the thickness of the electrode such as Al, Mo, W, etc., can be any suitable and/or desired thickness, for example,

0.010λ,

0.013λ,

0.016λ,

0.019λ or

0.022λ.

50nm、

100nm、

150nm或

200nm。 In any of the UBAR examples described herein, the thickness of the device layer such as diamond, SiC, AlN, etc., can be any suitable and/or desired thickness, for example,

50nm,

100nm,

150nm or

200nm.

0.05λ、

0.07λ、

0.09λ、

0.11λ或

0.13λ。 In any of the UBAR examples described herein, the thickness of the low acoustic impedance layer can be a suitable and/or desired thickness, for example,

0.05λ,

0.07λ,

0.09λ,

0.11λ or

0.13λ.

0.05λ、

0.07λ、

0.09λ、

0.11λ或

0.13λ。 In any of the UBAR examples described herein, the thickness of the high acoustic resistance layer can be a suitable and/or desired thickness, for example,

0.05λ,

0.07λ,

0.09λ,

0.11λ or

0.13λ.

2λ、

1.5λ、

1.0λ、

0.5λ或

0.3λ。理想地，在此所記載之任一UBAR例子之一個或更多或全部外表面被可選的鈍化層所保護。該鈍化層可以為一層介電材料，如AlN、SiN、SiO₂等。 In any of the UBAR examples described herein, the thickness of the temperature compensation layer can be a suitable and/or desired thickness, for example,

2λ,

1.5λ,

1.0λ,

0.5λ or

0.3λ. Ideally, one or more or all of the outer surface of any UBAR example described herein is protected by an optional passivation layer. The passivation layer can be a layer of dielectric material, such as AlN, SiN, SiO ₂ and so on.

0.1GHz,

0.5GHz、

1.0GHz、

1.5GHz或

2.0GHz。 The resonance frequency of any UBAR example described here can be

0.1GHz,

0.5GHz,

1.0GHz,

1.5GHz or

2.0GHz.

3%、

4%、

6%、

8%或

10%。 The coupling efficiency of any UBAR example described here can be

3%,

4%,

6%,

8% or

10%.

Any of the UBAR examples described here will resonate in a mode, which includes a bulk acoustic wave. The shallow bulk acoustic wave can include but is not limited to S ₀ mode, extended mode, shear mode, A ₁ mode, flexural mode, etc., and Compound mode.

More non-limiting implementation types or examples will be described in the numbered examples below.

Embodiment 1: A bulk acoustic wave resonator includes: a resonant body, which includes: a piezoelectric layer, the piezoelectric layer is a single crystal of LiNbO3; a device layer; and an upper conductive layer, which is located above the piezoelectric layer And the other side of the aforementioned piezoelectric layer is the aforementioned device layer; wherein the entire surface of the aforementioned device layer on the opposite side of the aforementioned piezoelectric layer is essentially used to make the aforementioned resonator itself The body is installed on the carrier and separates the resonator body.

Embodiment 2: As in the bulk acoustic resonator of embodiment 1, the single crystal of LiNbO3 can be cut at an angle of 130°±30°, ±20°, or ±10°.

Embodiment 3: The bulk acoustic resonator of embodiment 1 or 2, wherein the single crystal of LiNbO3 can be cut at an angle of 0°±30°, ±20°, or ±10°.

0.1GHz、

0.5GHz、

1.0GHz、

1.5GHz或

2.0GHz。 Embodiment 4: The bulk acoustic wave resonator of any one of Embodiments 1 to 3 may include the resonance frequency of mode 3 or mode 4

0.1GHz,

0.5GHz,

1.0GHz,

1.5GHz or

2.0GHz.

8%、

11%、

14%、

17%或

20%；及模式4共振之耦合效率

3%、

4%、

6%、

8%或

10%。 Embodiment 5: The bulk acoustic resonator of any one of Embodiments 1 to 4, which may include at least one of the following: Coupling efficiency of mode 3 resonance

8%,

11%,

14%,

17% or

20%; and the coupling efficiency of mode 4 resonance

3%,

4%,

6%,

8% or

10%.

0.5λ、

0.4λ、

0.3λ或

0.2λ。 Embodiment 6: The bulk acoustic resonator as in any one of Embodiments 1 to 5, wherein the single crystal thickness of LiNbO3 in mode 4 resonance can be

0.5λ,

0.4λ,

0.3λ or

0.2λ.

2λ、

1.6λ、

1.2λ或

0.8λ。 Embodiment 7: The bulk acoustic resonator as in any one of Embodiments 1 to 6, wherein the single crystal thickness of LiNbO3 in mode 3 resonance can be

2λ,

1.6λ,

1.2λ or

0.8λ.

0.010λ、

0.013λ、

0.016λ、

0.019λ或

0.022λ。 Embodiment 8: The bulk acoustic resonator as in any one of Embodiments 1 to 7, further comprising a conductive layer between the piezoelectric layer and the device layer, with a thickness of

0.010λ,

0.013λ,

0.016λ,

0.019λ or

0.022λ.

50nm、

100nm、

150nm或

200nm。 Embodiment 9: The bulk acoustic resonator as in any one of Embodiments 1 to 8, wherein the thickness of the device layer can be

50nm,

100nm,

150nm or

200nm.

0.05λ、

0.07λ、

0.09λ、

0.11λ或

0.13λ。 Embodiment 10: The bulk acoustic wave resonator of any one of Embodiments 1 to 9, which further includes a low acoustic impedance material between the piezoelectric layer and the device layer, and the acoustic impedance of the aforementioned low acoustic impedance material is between Between 10 ⁶ Pa-s/m ³ and 30 x 10 ⁶ Pa-s/m ³ , the thickness is

0.05λ,

0.07λ,

0.09λ,

0.11λ or

0.13λ.

0.05λ、

0.07λ、

0.09λ、

0.11λ或

0.13λ。 Embodiment 11: The bulk acoustic wave resonator of any one of Embodiments 1 to 10, which further includes a high acoustic resistance material between the piezoelectric layer and the device layer, and the acoustic resistance of the aforementioned high acoustic resistance material is between 10 ⁶ Pa-s/m ³ and 630 x 10 ⁶ Pa-s/m ³ , the thickness is

0.05λ,

0.07λ,

0.09λ,

0.11λ or

0.13λ.

2λ、

1.5λ、

1.0λ、

0.5λ或

0.3λ。 Embodiment 12: The bulk acoustic resonator of any one of Embodiments 1 to 11, which further includes a temperature compensation layer between the piezoelectric layer and the device layer. The temperature compensation layer includes silicon and oxygen, and has a thickness of

2λ,

1.5λ,

1.0λ,

0.5λ or

0.3λ.

Embodiment 13: The bulk acoustic resonator as in any one of Embodiments 1 to 12 further includes a passivation layer.

70μm、

20μm、

10μm、

6μm或

4μm。 Embodiment 14: The bulk acoustic resonator of any one of Embodiments 1 to 13, wherein the upper conductive layer may include at least one set of conductive shrapnel with compartments. The finger spacing of the aforementioned at least one set of conductive shrapnel with compartments can be

70μm,

20μm,

10μm,

6μm or

4μm.

Embodiment 15: The bulk acoustic resonator as in any one of Embodiments 1 to 14, further comprising a plurality of alternating temperature compensation layers and high acoustic resistance layers between the piezoelectric layer and the device layer.

Embodiment 16: Bulk acoustic resonance as in any one of Embodiments 1 to 15 A device, wherein the aforementioned device layer may further include the following: diamond; W; SiC; Ir, AlN, Al; Pt; Pd; Mo; Cr; Ti; Ta; elements of group 3A or 4A on the periodic table; Above 1B, 2B, 3B, 4B, 5B, 6B, 7B or 8B transition elements; ceramics; glass and polymers.

The purpose of the present invention has been described in detail based on the most ideal practical and non-limiting embodiments, examples or types currently considered, but it should be understood that these details are only used for this purpose and the present invention is not limited to the disclosed ideal and non-limiting The embodiment, example or type. On the contrary, this description is intended to cover modifications and equivalent configurations within the spirit and scope of the patent application. For example: it should be understood that the present invention will consider any or more ideal and non-limiting embodiments, examples, types or technologies attached to the scope of the patent application as far as possible, and may be combined with one or more other ideal and non-limiting embodiments. Embodiments, examples, types, or technical combinations within the scope of the attached patent application.

2: Bulk Acoustic Resonator (UBAR)

6: Upper conductive layer

8: Piezoelectric layer

10: Optional lower conductive layer

12: Device layer

14: Carrier

34, 36: Connection structure

90, 92: temperature compensation layer

96: Aluminum Nitride

Claims (20)

A bulk acoustic wave resonator, characterized by comprising: a resonator body, comprising: a piezoelectric layer, the piezoelectric layer is a _{single crystal of LiNbO 3,} the single crystal of LiNbO ₃ has a cutting angle and a thickness, The aforementioned angle and the aforementioned thickness facilitate a predetermined coupling efficiency of a mode 3 resonance and a mode 4 resonance; a device layer is located below the piezoelectric layer; and an upper conductive layer is located above the piezoelectric layer and the pressure The other side of the electrical layer is the aforementioned device layer; wherein the entire surface of the aforementioned device layer opposite to the aforementioned piezoelectric layer is essentially used to mount the aforementioned resonator body on a carrier and separate the aforementioned resonator body. The bulk acoustic resonator described in the first item of the scope of patent application, wherein the aforementioned _{single crystal of LiNbO 3} is cut at an angle of 130°±30°. The bulk acoustic resonator described in the first item of the scope of patent application, wherein the aforementioned _{single crystal of LiNbO 3} is cut at an angle of 130°±20°. The bulk acoustic resonator described in the first item of the scope of patent application, wherein the aforementioned _{single crystal of LiNbO 3} is cut at an angle of 130°±10°. As for the bulk acoustic resonator described in item 1 of the scope of patent application, _{the single crystal of LiNbO 3} is cut at an angle of 0°±30°. The bulk acoustic resonator described in the first item of the scope of patent application, wherein _{the single crystal of LiNbO 3} is cut at an angle of 0°±20°. The bulk acoustic resonator described in the first item of the scope of patent application, wherein the aforementioned _{single crystal of LiNbO 3} is cut at an angle of 0°±10°. The bulk acoustic resonator described in item 7 of the scope of patent application, which contains the resonance frequency

The aforementioned mode 3 resonance or the aforementioned mode 4 resonance at 0.1 GHz. The bulk acoustic wave resonator described in item 1 of the scope of the patent application includes at least one of the following: a predetermined coupling efficiency

8% of the aforementioned mode 3 resonance; and has a predetermined coupling efficiency

3% of the aforementioned mode 4 resonance. The bulk acoustic wave resonator described in item 9 of the scope of patent application, wherein, in the aforementioned mode 4 resonance, the single crystal thickness of the _{aforementioned LiNbO 3}

0.5λ, where the value of λ is based on the size of the pattern or feature defined by the aforementioned upper conductive layer, or based on the aforementioned single crystal thickness of _{LiNbO 3.} The bulk acoustic resonator described in the scope of patent application, wherein, in the aforementioned mode 3 resonance, the single crystal thickness of the _{aforementioned LiNbO 3}

2λ, where the value of λ is based on the size of the pattern or feature defined by the upper conductive layer, or based on the single crystal thickness of the _{aforementioned LiNbO 3.} The bulk acoustic resonator described in item 1 of the scope of patent application further includes a thickness between the piezoelectric layer and the device layer

The lower conductive layer of 0.010λ, where the value of λ is based on the size of the pattern or feature defined by the upper conductive layer, or the single crystal thickness of the _{aforementioned LiNbO 3.} The bulk acoustic resonator described in item 1 of the scope of patent application, wherein the thickness of the aforementioned device layer

50nm. The bulk acoustic resonator described in item 1 of the scope of the patent application further includes a layer of low acoustic impedance material located between the piezoelectric layer and the device layer, which has a value between 10 ⁶ Pa-s/m ³ and 30 x Acoustic impedance and thickness between 10 ⁶ Pa-s/m ³

0.05λ, where the value of λ is based on the size of the pattern or feature defined by the upper conductive layer, or based on the single crystal thickness of _{LiNbO 3 described above.} The bulk acoustic resonator described in item 1 of the scope of the patent application further includes a layer of high acoustic impedance material located between the piezoelectric layer and the device layer, which has a value between 10 ⁶ Pa-s/m ³ and 630 x Acoustic impedance and thickness between 10 ⁶ Pa-s/m ³

0.05λ, where the value of λ is based on the size of the pattern or feature defined by the upper conductive layer, or based on the single crystal thickness of the _{aforementioned LiNbO 3.} The bulk acoustic resonator described in item 1 of the scope of patent application further includes a temperature compensation layer located between the piezoelectric layer and the device layer, which includes silicon and oxygen, and has a thickness

2λ, where the value of λ is based on the size of the pattern or feature defined by the upper conductive layer, or the single crystal thickness of the _{aforementioned LiNbO 3.} The bulk acoustic resonator described in item 1 of the scope of patent application further includes a passivation layer. As for the bulk acoustic resonator described in item 1 of the scope of the patent application, the upper conductive layer includes at least a set of conductive shrapnel with compartments. The bulk acoustic resonator described in item 1 of the scope of the patent application further includes a plurality of alternating temperature compensation layers and high acoustic resistance layers between the piezoelectric layer and the device layer. The bulk acoustic resonator described in the first item of the scope of patent application, wherein the aforementioned device layer includes at least one of the following: diamond; W; SiC; Ir, AlN, Al, Pt, Pd, Mo, Cr, Ir, Ti , Ta; elements of group 3A or 4A in the periodic table; transition elements of group 1B, 2B, 3B, 4B, 5B, 6B, 7B or 8B in the periodic table; ceramics; glass and polymers.

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