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TWI747211B - 賦予摻雜硼之碳膜靜電夾持及極佳粒子性能的漸變原位電荷捕捉層 - Google Patents

賦予摻雜硼之碳膜靜電夾持及極佳粒子性能的漸變原位電荷捕捉層 Download PDF

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TWI747211B
TWI747211B TW109109764A TW109109764A TWI747211B TW I747211 B TWI747211 B TW I747211B TW 109109764 A TW109109764 A TW 109109764A TW 109109764 A TW109109764 A TW 109109764A TW I747211 B TWI747211 B TW I747211B
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boron
adjustment layer
substrate
processing chamber
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派瑞尚特庫馬 庫許魯須薩
子青 段
艾比杜亞西斯 克哈嘉
正約翰 葉
阿米古莫 班莎
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美商應用材料股份有限公司
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Abstract

本發明大體上關於具有漸變組成的處理腔室調整層。在一實施例中，該調整層為氮化硼碳(BCN)膜。在該BCN膜的底部處可能具有較高的硼成分。在該BCN膜完成沉積時，硼的濃度可能接近零，同時碳及氮的相對濃度提高。可藉著在初期使硼前驅物、碳前驅物及氮前驅物一同流入來沉積該BCN膜。經過第一時段之後，降低硼前驅物的流動速率。在沉積該調整層期間，可在硼前驅物的流動速率降低時，施加RF功率以生成電漿。

Description

賦予摻雜硼之碳膜靜電夾持及極佳粒子性能的漸變原位電荷捕捉層
本發明實施例大體上關於處理腔室(例如半導體處理腔室)用的調整膜，及關於塗覆和使用該等調整膜的方法。
下世代元件的其中一方向是使每個經處理的矽基板達到更高產量及更佳的元件良率及性能。未來世代的NAND及DRAM元件具更多由氮氧化物沉積物所形成的複數個堆疊，而造成進料基板具有超過±200微米的弓形幅度。在膜層沉積期間若沒有足夠的夾持力使基板保持平坦，會變得難以使膜性質(例如，斜角覆蓋率、厚度及蝕刻選擇性)達到均勻一致。
可能藉由靜電夾持來消除基板的弓形度，從而增進膜性質的均勻性。然而，在處理腔室內部塗覆有調整層以用來保護處理腔室部件，而基板的靜電夾持作用經常受到該等調整層的影響。調整膜的其中一個實例是含硼的碳。雖然含硼的碳膜有助於靜電夾持作用，但含硼的碳膜容易剝落並在基板上造成粒子污染。調整層的另一個實例是非晶硼膜。相較於含硼的碳膜而言，非晶硼膜具有較少的剝落情形。然而，非晶硼膜具有相對高的漏電電流且進而對弓形基板的靜電夾持作用產生負面影響。
因此，需要一種改善的處理腔室調整層，該調整層能提供適當的粒子性能及夾持性能。
本發明大體上關於具有漸變組成的處理腔室調整層。在一實施例中，該調整層為硼-碳-氮(BCN)膜。在該BCN膜的底部處可具有較高的硼成分。當該BCN膜完成沉積時，硼的濃度可能接近零，同時碳及氮的相對濃度提高。可藉著在初期使硼前驅物、碳前驅物及氮前驅物一同流入來沉積該BCN膜。經過第一時段之後，可逐漸降低該硼前驅物的流動速率至達到零。於沉積該調整層的期間，在該硼前驅物的流動速率降低時，可施加RF功率以生成電漿。
在一實施例中，沉積調整層的方法包括將硼前驅物、氮前驅物及碳前驅物引入處理腔室中持續第一時段。在該第一時段期間，形成硼-碳-氮調整層的非晶硼基底部分。在第二時段期間，逐漸減小該硼前驅物的流動速率。在該第二時段期間，於該基底部分上沉積該硼-碳-氮調整層的頂部部分。該頂部部分具有逐漸減小的硼濃度分佈輪廓。
在另一實施例中，夾持基板的方法包括在處理腔室內形成調整層。形成該調整層的步驟包括將硼前驅物、氮前驅物及碳前驅物引入處理腔室中持續第一時段。在該第一時段期間，形成硼-碳-氮調整層的非晶硼基底部分。在第二時段期間，逐漸減小該硼前驅物的流動速率。在該第二時段期間，於該基底部分上沉積該硼-碳-氮調整層的頂部部分。該頂部部分具有逐漸減小的硼濃度分佈輪廓。將基板放置在該處理腔室內的支撐件上，且該支撐件包含靜電夾盤，對該支撐件施加功率以將該基板靜電夾持在該支撐件上。
在另一實施例中，調整層包括硼-碳-氮膜，其中該硼-碳-氮膜具有基底部分及頂部部分，該基底部分具有均勻的硼濃度及該頂部部分具有逐漸減小的硼濃度。
本發明大體上關於具有漸變(graded)組成的處理腔室調整層。在一實施例中，該調整層為硼-碳-氮(BCN)膜。在該BCN膜的底部處可具有較高的硼成分。當該BCN膜完成沉積時，硼的濃度可能接近零，同時碳及氮的相對濃度提高。可藉著在初期使硼前驅物、碳前驅物及氮前驅物一同流入來沉積該BCN膜。經過第一時段之後，可逐漸降低該硼前驅物的流動速率至達到零。於沉積該調整層的期間，可在該硼前驅物的流動速率降低時，施加RF功率以生成電漿。
第1A圖為處理腔室100的概要剖面圖，在該處理腔室中可沉積本發明的調整層。處理腔室100包括基板支撐組件101，且在該基板支撐組件101上處理基板102。處理腔室100可為化學氣相沉積(CVD)處理腔室、熱燈絲化學氣相沉積(HWCVD)處理腔室、蝕刻腔室或用於處理基板的其他真空腔室。
處理腔室100包含腔室主體103，腔室主體103具有頂部104、腔室側壁105及腔室底部106且該等部位連接至接地145。頂部104、腔室側壁105及腔室底部106界定出內部處理區域107。腔室側壁105可包括基板移送口108以便於傳送基板102進入及離開該處理腔室100。基板移送口108可連接至移送室及/或基板處理系統的其他腔室。
腔室主體103的尺寸及處理腔室100的相關部件並未加以限制，且通常按比例地大於該將在腔室中進行處理的基板102。基板尺寸的實例包括200毫米的直徑、250毫米的直徑、300毫米的直徑及450毫米的直徑，等等。
在一實施例中，泵裝置109連接至該處理腔室100的底部106以用來抽空及控制該處理腔室100內的壓力。泵裝置109可為習知的粗抽泵、魯氏鼓風機(roots blower)、渦輪式泵或適用於控制該內部處理區域107中之壓力的其他類似裝置。在一實施例中，該處理腔室100之內部處理區域107中的壓力水平可維持在低於約760托耳(Torr)。
氣體控制板110經由氣體管線111供應製程氣體、前驅物氣體及其他氣體進入該腔室主體103的內部處理區域107中。如有需要，氣體控制板110可配置成可提供一或更多種製程氣體源、清洗氣體、惰性氣體、不反應性氣體及反應性氣體。噴淋頭112配置在處理腔室100的頂部104下方，且噴淋頭112以隔開的方式配置在該基板支撐組件101上方。藉此，當基板102放置在基板支撐組件101上以進行處理時，噴淋頭位於基板102上方。由氣體控制板110所提供的一或更多種製程氣體可經由噴淋頭112供應反應性物種至該內部處理區域107中。噴淋頭112亦可作為電極以使功率與該內部處理區域107中的氣體耦合而可例如從該等氣體生成離子化物種。亦考慮可利用其他電極或裝置使功率與該內部處理區域107中的氣體耦合。
電力供應器113可透過匹配電路114連接至噴淋頭112。在一實例中，電力供應器113可供應高頻RF能量至噴淋頭112。電力供應器113施加於噴淋頭112的能量會與配置在該內部處理區域107中的製程氣體進行感應耦合以維持該處理腔室100內的電漿。或者(或除了電力供應器113之外)，可使功率與該處理區域107中的製程氣體進行電容耦合以維持該處理區域107內的電漿。可利用控制器(圖中未示出)控制電力供應器113的運作，該控制器亦可控制處理腔室100中之其他部件的運作。
第1B圖是第1A圖所示處理腔室100之基板支撐組件101的局部放大圖。基板支撐組件101包括靜電夾盤(ESC)115，靜電夾盤115可將配置在該夾盤115上的基板102夾持住。在處理過程中，ESC 115將基板102固定於基板支撐組件101上。ESC 115可由介電材料形成，例如可由陶瓷材料(例如，氮化鋁(AlN)或其他合適的材料)形成。ESC 115使用靜電吸引力將基板102固持於基板支撐組件101上。
ESC 115包括夾持電極116，夾持電極116透過配置在電源117與夾持電極116之間的隔離變壓器118而連接至電源117。隔離變壓器118可視需要為電源117的一部分。電源117可對夾持電極116施加約50伏特(volt)至約5000伏特之間的夾持電壓。視情況需要，該基板支撐組件101可包括以下其中一者或更多者：加熱器119(加熱器119具有加熱元件161且加熱元件161連接至電力供應器162)、冷卻底座(圖中未示出)或設施板160。在該ESC 115上可配置有塗膜或膜層以抑制電流漏電且減少該處理腔室100內的粒子污染。在一實例中，該塗膜或膜層為調整層220。
在替代實施例中，可附加地使用RF濾波電路，或用RF濾波電路作為隔離變壓器118的替代物。RF濾波電路可經調整以攔阻任何可能對該電源117造成干擾的寄生性RF分量(parasitic RF component)，從而使ESC 115的夾持能力最大化。在一實例中，該RF濾波電路可包括50nF的電感器(inductor)，該電感器可過濾掉約為13.56MHz的高頻射頻(HFRF)。
在一實例中，ESC 115可為強生-雷貝克(JR)單極夾盤(Johnsen-Rahbeck monopolar chuck)，該JR單極夾盤是使用JR力來夾持基板，而不是使用庫侖力來夾持基板。當使用JR力時，夾持力會隨著接觸面積的增加及/或隨著有效電壓的提高(例如提高電力供應及/或減少漏電電流)而提高。如以下所述般，調整層可影響漏電電流，從而能夠影響ESC的夾持能力。
第2圖示出根據本發明一實施例所做之調整層220的剖面圖。圖中所示的調整層220是配置在基板支撐組件101上。然而應明白，調整層220可配置在該處理腔室的其他內部表面上。調整層220為漸變(graded)調整層，該漸變調整層具有漸變的或逐漸減小的濃度的一或更多種元素。
在一實施例中，調整層220含有漸變濃度的硼。在此一實施例中，在該調整層220之基底部分222a處的濃度高於該調整層220之頂部部分222b處的濃度。雖然第2圖中顯示該調整層220具有複數個子層，但應瞭解，該調整層220可為連續形成且具有漸變組成的單層。調整層220可為硼-碳-氮膜，該硼-碳-氮膜具有以下組成：約1莫耳%(mol%)至10莫耳%範圍間的氮、約20莫耳%至50莫耳%範圍間的碳、及從基底部分222a處為約80莫耳%至約90莫耳%範圍間至該頂部部分222b處為零濃度的硼。在一實施例中，可預期到，在該調整層220的基底部分222a中可具有相對恆定的硼濃度，隨後在該頂部部分222b中，硼的濃度開始逐漸遞減至零。在此一實施例中，該基底部分222a可具有約100Å至約2000Å的厚度且該厚度具有均勻的硼濃度，例如約85莫耳%至約95莫耳%的硼濃度。在沉積該基底部分222a之後，硼的濃度可逐漸遞減至零且同時持續沉積總厚度在約200Å至約20000Å間(例如約200Å至約4000Å間)的碳-硼-氮膜。
第3圖為根據本發明一實施例所示用來沉積調整層之方法390的流程圖。方法390始於操作步驟391。在操作步驟391中進行清洗作業。於蝕刻製程、沉積製程或其他製程之後，在處理腔室(例如，處理腔室100)中進行該清洗作業。該清洗製程去除該處理腔室之內部表面上的任何粒子污染物或早先沉積的腔室調整物。合適的清洗氣體可包括以下其中之一或更多者：O2 、Ar或NF3 或以上氣體所形成的自由基或離子。
抽除該等清洗氣體之後，在操作步驟392期間，將一或更多種前驅物氣體引入該處理腔室中以沉積該調整層220的基底部分222a(如第2圖中所示)。該一或更多種前驅物氣體將硼、碳及氮引入該處理腔室。該一或更多種前驅物氣體可包括含碳前驅物、含氮前驅物及含硼前驅物。可經由相同或不同的氣體入口將該一或更多種前驅物氣體引入該處理腔室中。
示例性的含碳前驅物包括丙烯、乙炔、乙烯、甲烷、己烷、異戊二烯及丁二烯，等等。可用約100 sccm至約2000 sccm範圍間的流動速率將該含碳前驅物氣體引入該處理腔室中。示例性的含氮前驅物包括吡啶、脂族胺類化合物(aliphatic amines)、胺類化合物(amines)、腈類化合物(nitriles)及氨，等等。可用約500 sccm至約15000 sccm範圍間的流動速率將該含氮前驅物氣體引入該處理腔室中。在初期可用約500 sccm至約4000 sccm範圍間的流動速率將該含硼前驅物引入該處理腔室中。示例性的含硼前驅物包括二硼烷(diborane)、鄰碳硼烷(orthocarborane)及三甲基環硼氮烷(trimethylborazine)，等等。在操作步驟392期間，形成該調整層220的第一部分。該調整層220的第一部分是非晶硼膜。在該等前驅物氣體熱分解期間會形成該非晶硼膜。由於含硼前驅物遠比含碳前驅物及含氮前驅物容易解離，因此在操作步驟392期間所形成的該非晶碳膜可能含有約80莫耳%至約100莫耳%的硼，例如含有約80莫耳%至約90莫耳%的硼。
在操作步驟393中，降低該含硼前驅物的流動速率，並施加RF功率。初期可用約500 sccm至約4000 sccm範圍間的流動速率將該含硼前驅物引入該處理腔室中，且可逐漸降低該含硼前驅物的流動速率至約零。在沉積該調整層220期間，該含碳前驅物及該含氮前驅物的流動速率可大約維持恆定，同時在形成該調整層220的過程中可降低該含硼前驅物的流動速率。在逐漸減少該含硼前驅物之時，同時施加RF功率以使該等前驅物氣體離子化。由於RF功率有助於含氮前驅物及含碳前驅物的離子化，因此在操作步驟393期間所形成之該調整層220的部分(例如，第2圖中所示的頂部部分222b)所包含的氮及碳濃度高於在操作步驟392期間所形成之該調整層220的部分(例如，基底部分222a)。第4A圖及第4B圖分別示出方法390的含硼前驅物流動速率及RF功率施加情形的實例。
第4A圖為根據本發明一實施例示出在沉積調整層期間，含硼前驅物氣體的流動速率圖425。在時間t0 時，用500 sccm至約4000 sccm範圍間的恆定流動速率將該含硼前驅物氣體引入處理腔室中。在第4A圖所示的實施例中是以1000 sccm的流動速率引入該含硼前驅物。在時間t1 (時間t1 可能與時間t0 相隔約5秒至約30秒)，該含硼前驅物氣體的流動速率開始逐漸減小或降低。在一實例中，時間t1 可與第3圖中所示的操作步驟393重疊。該含硼前驅物的流動速率持續降低直到時間t2 為止，在時間t2 處，該含硼前驅物氣體的流動速率達到零。在一實例中，時間t1 與時間t2 之間的時間差為約10秒至約20秒。時間t1 與時間t2 之間的時間差經過選擇以在該調整層220中提供足夠的硼量而可減少該調整層220的剝落情形，及提供足夠的非晶碳量以幫助該調整層220捕捉電荷。在靜電夾盤上具有調整層220，該調整層220中的電荷捕捉作用可增進該靜電夾盤的靜電夾持性能。
第4B圖為根據本發明一實施例示出在沉積調整層期間高頻RF功率施加圖426。可對該處理腔室施加RF功率以使該處理腔室內的一或更多種氣體離子化。在一實施例中，在時間t0 至時間t1 之間未對該處理腔室施加RF功率。不施加RF功率是仰賴該等前驅物氣體進行熱分解來初步沉積調整層。該等前驅物氣體的熱分解作用有助於調整層附著於下方的腔室部件。在時間t1 時，與逐漸減少該含硼前驅物氣體之步驟同步進行的是對該處理腔室施加恆定水平的RF功率。施加RF功率使該一或更多種前驅物氣體離子化可有助於在該調整層220中形成非晶材料。使用熱能量易於使該含硼前驅物氣體分解，然而該等含碳前驅物氣體及含氮前驅物氣體可能不是那麼容易分解。所施加的RF功率有助於該等含碳前驅物及含氮前驅物分解。RF功率的施加持續進行至時間t2 ，在時間t2 結束該調整層220的沉積。
第5圖示出本發明之調整層220與習知調整層的粒子性能比較圖530。圖530示出在基板上進行製程之後，在300毫米之矽基板上找到尺寸大於0.09微米之非期望粒子的數目。該製程可例如為蝕刻製程，並在調整層531a～調整層531h及調整層220中之各調整層存在的情況下進行該製程以供比較之用。調整層531a為摻雜氮的非晶碳層，且該摻雜氮的非晶碳層實質上不含硼。調整層531a造成在處理之後，該基板表面上的粒子計數約為130個粒子。
調整層531b為非晶硼層。調整層531b造成在處理之後，該基板表面上的粒子計數約為45個粒子。調整層531c為堆疊式調整層，該堆疊式調整層具有由非晶硼所形成的第一層及配置在第一層上且由摻雜氮之非晶碳所形成的第二層。調整層531c造成在處理之後，該基板表面上的粒子計數約為50個粒子。調整層531d為摻雜硼的非晶碳層，且整個摻雜硼的非晶碳層具有均勻的硼濃度。在一實例中，該調整層531d的組成為含有約50莫耳%的硼。調整層531d造成在處理之後，該基板表面上的粒子計數約為140個粒子。
調整層531e是使用約500 sccm至約1000 sccm範圍間之氮前驅物流量設定點及約1000 sccm至約2000 sccm範圍間之硼前驅物流量設定點所形成的非晶碳層。調整層531e造成在處理之後，該基板表面上的粒子計數約為190個粒子。調整層531f是使用約5000 sccm至約10000 sccm範圍間之氮前驅物流量設定點及約1000 sccm至約2000 sccm範圍間之硼前驅物流量設定點所形成的非晶碳層。因此，調整層531f的氮濃度高於調整層531e的氮濃度。調整層531f造成在處理之後，該基板表面上的粒子計數約為105個粒子。調整層531g是使用約5000 sccm至約10000 sccm範圍間之氮前驅物流量設定點及約500 sccm至約1000 sccm範圍間之硼前驅物流量設定點所形成的非晶碳層。因此，調整層531g的硼濃度低於調整層531f的硼濃度。調整層531g造成在處理之後，該基板表面上的粒子計數約為70個粒子。
調整層531h是使用約5000 sccm至約10000 sccm範圍間之氮前驅物流量設定點及使用從約500 sccm至約1000 sccm範圍間開始並逐漸降至200 sccm的硼流量設定點所形成的非晶碳層。可使用第4A圖的硼氣體流量分佈輪廓來形成該調整層531h。調整層531h造成在處理之後，該基板表面上的粒子計數約為80個粒子。如以上所述般地形成調整層220。調整層220是使用約5000 sccm至約10000 sccm範圍間之氮流量設定點及使用從約500～1000 sccm開始並逐漸降至零的硼流量設定點所形成的非晶碳膜。調整層531h 造成在處理之後，該基板表面上的粒子計數約為35個粒子。進行進一步比較，缺少調整層時，經處理的基板所具有的粒子計數將會超過250。
第6A圖及第6B圖示出本發明之調整層與習知調整層的夾持性能比較結果。第6A圖示出在整個基板上49個等距間隔的徑向點處所測得且經標準化後的基板厚度(在參考點處所測得的平面基板厚度對比在參考點處所測得被夾持著的基板之厚度)。「基線」示出夾持在支撐件上之平面基板的厚度分佈輪廓。因此，被完全夾持住的基板將會具有與該基線輪廓相符的厚度分佈輪廓。如第6A圖中所示，調整層531a及調整層531d各自造成平坦夾持該基板的作用。雖然圖中未示出，但調整層220的圖形也是類似的分佈輪廓。然而，雖然調整層531a及調整層531d能各自使基板被完全夾持，但調整層531a及調整層531d各自會在經處理的基板上造成令人不滿意的高粒子計數，如第5圖中所示般。調整層531b及調整層531c各自具有顯示出基板呈凹狀彎曲的標準化厚度分佈輪廓，表示這是局部被夾持住的基板。
第6B圖示出本發明之調整層220的漏電電流及習知調整層531a、調整層531b及調整層531d的漏電電流的比較結果。如圖所示，調整層220的漏電電流明顯少於習知調整層531b及調整層531d的漏電電流。此外，調整層220的漏電電流大小是習知調整層531a之漏電電流的10倍以內，同時如第5圖中所示，調整層220提供明顯優於習知調整層531a的粒子性能。因此，調整層220能夠提供與習知調整層大致相等的電荷捕捉或夾持性能，同時能大幅減少經處理後之基板上的粒子污染。
第7A圖示出在使用習知調整層進行調整之處理腔室中處理後的基板750a。第7B圖示出在使用本發明調整層進行調整之處理腔室中處理後的基板750b。基板750a展示出在該基板之背面752上的沉積環751。會出現沉積環751是由於靜電夾盤不能固定基板750a以使基板750a成為平坦狀(planar configuration)，導致基板750a在處理期間發生凹狀彎曲所造成。尤其，由於該基板750a之背面752的有些部分在處理期間是暴露出來的，因此材料能夠沉積在該背面752上。如上所述，習知調整層通常具有不充分的電荷捕捉能力(例如，較高的電流漏電情形)而對塗有習知調整層之夾盤的靜電夾持性能造成負面影響。夾持性能降低導致在處理期間會暴露出該基板750a一部分的背面752。沉積環751的存在會對元件性能造成負面影響，且在某些情況下可能導致損失整個基板750a。
相較之下，第7B圖中的基板750b是在使用本發明調整層220進行調整的處理腔室中進行處理。相較於習知調整層而言，調整層220藉由增進電荷捕捉作用而幫助提升夾持性能，甚至在約300o C至約650o C間的溫度下亦然。因此，在處理期間中也能夾持該基板750b(即使具有高達+/-400微米的弓形度)並使該基板750b保持平坦形狀。由於該基板750b在處理期間是平坦的，因此在基板750b的背面上不會成長出沉積環。
本案所揭示之調整層的好處包括減少基板上的粒子污染且增進電荷捕捉作用(例如，降低電流漏電情形)。本案所揭示的調整層包括逐漸減小的硼濃度分佈輪廓。在靠近該調整層的基底處具有相對較高的硼濃度有助於提高對於腔室部件(例如由氧化鋁或氮化鋁所製成的部件)的附著力。本案揭示之調整層的附著力提高會使該調整層減少剝落從而導致減少粒子污染。在靠近該調整層之頂部部分處具有相對較低的硼濃度會提高電荷捕捉作用。從而降低本案所揭示之調整層的漏電電流，並提升使用本發明調整層進行調整之基板支撐件的夾持性能。
儘管以上內容已舉出本發明的數個實施例，但在不偏離本發明基本範圍下，當可做出本發明的其他及進一步實施例，且本發明範圍是由後附請求項所決定。
100:處理腔室 101:基板支撐組件 102:基板 103:腔室主體 104:頂部 105:腔室側壁 106:腔室底部 107:內部處理區域 108:基板移送口 109:泵裝置 110:氣體控制板 111:氣體管線 112:噴淋頭 113:電力供應器 114:匹配電路 115:靜電夾盤 116:夾持電極 117:電源 118:隔離變壓器 119:加熱器 145:接地 160:設施板 161:加熱元件 162:電力供應器 220:調整層 222a:基底部分 222b:頂部部分 390:方法 391:操作步驟 392:操作步驟 393:操作步驟 425:含硼前驅物氣體的流動速率圖 426:高頻RF功率的施加圖 530:粒子性能比較圖 531a～531h:調整層 750a:基板 750b:基板 751:沉積環 752:背面
為求詳細瞭解本發明的上述特徵，可參考數個實施例更具體地說明以上簡要闡述的本發明，且附圖中示出部分的實施例。然而應注意的是，該等附圖僅示出示例性實施例，故該等附圖不應視為是本發明範圍的限制，且本發明容許做出其他等效實施例。
第1A圖為處理腔室的概要圖，在該處理腔室中可沉積本發明的調整層。第1B圖為第1A圖所示處理腔室之基板支撐組件的局部放大圖。
第2圖為根據本發明一實施例示出調整層的剖面圖。
第3圖為根據本發明一實施例示出用來沉積調整層之方法的流程圖。
第4A圖為根據本發明一實施例示出在沉積調整層期間，含硼前驅物氣體的流動速率圖。
第4B圖為根據本發明一實施例示出在沉積調整層期間施加RF功率的圖。
第5圖示出本發明調整層與習知調整層之粒子性能的比較圖。
第6A圖及第6B圖示出本發明調整層與習知調整層之夾持性能的比較結果。
第7A圖示出在使用習知調整層進行調整之處理腔室中接受處理後的基板。第7B圖示出在使用本發明調整層進行調整之處理腔室中接受處理後的基板。
為幫助理解，盡可能地使用相同元件符號來代表該等圖式中共同的相同元件。無需多做說明，便能思及到可將一實施例中的要素及特徵有利地併入其他實施例中。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
390:方法
391:操作步驟
392:操作步驟
393:操作步驟

Claims (20)

  1. 一種沉積一調整層的方法，包含以下步驟：將一硼前驅物流入一處理腔室中達一第一時段；在該第一時段期間，形成該調整層的一基底部分，該基底部分包含非晶硼；在一第二時段期間，將該硼前驅物流入該處理腔室中，其中在該第二時段期間之該硼前驅物的流動速率低於該第一時段期間之該硼前驅物的流動速率；以及在該第二時段期間，於該基底部分上形成該調整層的一頂部部分，該頂部部分中之碳濃度高於該基底部分中之碳濃度。
  2. 如請求項1所述之方法，其中該硼前驅物在該第一時段期間被熱分解。
  3. 如請求項1所述之方法，進一步包含以下步驟：在該第二時段期間對該處理腔室施加RF功率。
  4. 如請求項1所述之方法，進一步包含以下步驟：在該基底部分與該頂部部分之間形成該調整層的一中間部分，該中間部分包含高於該基底部分之氮濃度。
  5. 如請求項1所述之方法，其中該第一時段在約5秒至約30秒的範圍內。
  6. 如請求項1所述之方法，其中該第二時段在約10秒至約20秒的範圍內。
  7. 如請求項1所述之方法，進一步包含以下步驟：在將該硼前驅物引入一處理腔室內之前，先將一清洗氣體引入該處理腔室內，其中該清洗氣體包含O2、Ar及NF3中之一者或更多者。
  8. 如請求項1所述之方法，其中該硼前驅物選自由二硼烷(diborane)、鄰碳硼烷(orthocarborane)及三甲基環硼氮烷(trimethylborazine)所構成之群組。
  9. 如請求項4所述之方法，其中在該第二時段期間形成該調整層的該中間部分。
  10. 如請求項1所述之方法，其中在該調整層之一表面處的硼濃度為約零。
  11. 如請求項1所述之方法，其中該調整層被沉積達約200Å至約2,000Å的一厚度。
  12. 一種夾持一基板的方法，包含以下步驟：在一處理腔室內形成一調整層，包含以下步驟：將一硼前驅物流入一處理腔室中達一第一時段； 在該第一時段期間，形成該調整層的一基底部分，該基底部分包含非晶硼；將該硼前驅物流入該處理腔室中達一第二時段期間，其中在該第二時段期間之該硼前驅物的流動速率低於該第一時段期間之該硼前驅物的流動速率；以及在該第二時段期間，於該基底部分上沉積該調整層的一頂部部分，該頂部部分中之碳濃度高於該基底部分中之碳濃度；將一基板放置在該處理腔室內的一支撐件上，該支撐件包括一靜電夾盤；以及對該支撐件施加功率以將該基板靜電夾持至該支撐件。
  13. 如請求項12所述之方法，其中該基板是一300毫米的矽晶圓，且在對該支撐件施加功率之前，該基板具有約+/-400微米之一弓形度，且在對該支撐件施加功率之後，該基板為大致平面狀。
  14. 如請求項12所述之方法，其中該調整層被沉積達約200Å至約2,000Å的一厚度。
  15. 如請求項14所述之方法，進一步包含以下步驟：在該基底部分與該頂部部分之間形成該調整層的一中間部分，該中間部分包含高於該基底部 分之氮濃度。
  16. 如請求項15所述之方法，其中在該第二時段期間形成該中間部分。
  17. 如請求項14所述之方法，其中該硼前驅物被熱分解達該第一時段，且將一RF功率施加至該處理腔室達該第二時段。
  18. 一種調整層，包含：一硼-碳-氮膜，其中該硼-碳-氮膜具有一基底部分及一頂部部分，該基底部分具有一均勻的硼濃度且該頂部部分中之碳濃度高於該基底部分中之碳濃度。
  19. 如請求項18所述之調整層，其中該硼-碳-氮膜進一步包含一中間部分，該中間部分位於該基底部分與該頂部部分之間，該中間部分包含高於該基底部分之氮濃度。
  20. 如請求項19所述之調整層，其中在該頂部部分之一表面處的硼濃度為約零。
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US10128088B2 (en) 2018-11-13
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TWI692543B (zh) 2020-05-01
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