TWI747192B - Release film - Google Patents
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- TWI747192B TWI747192B TW109107700A TW109107700A TWI747192B TW I747192 B TWI747192 B TW I747192B TW 109107700 A TW109107700 A TW 109107700A TW 109107700 A TW109107700 A TW 109107700A TW I747192 B TWI747192 B TW I747192B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
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- C08J5/18—Manufacture of films or sheets
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
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Abstract
本發明之目的在於:提供一種於使用於可撓性電路基板之製造步驟之情形時,不會使基板受到污染之離型膜。本發明之離型膜具有:含有烯烴系聚合物、及熔點為160℃以上之酚系抗氧化劑的離型層。又,本發明之離型膜具有:含有烯烴系聚合物、及金屬減活劑之離型層,且上述離型層藉由X射線光電子光譜法所測定之表面之氮濃度為1.5%以下。The purpose of the present invention is to provide a release film that does not contaminate the substrate when it is used in the manufacturing step of a flexible circuit substrate. The release film of the present invention has a release layer containing an olefin-based polymer and a phenol-based antioxidant having a melting point of 160°C or higher. In addition, the release film of the present invention has a release layer containing an olefin-based polymer and a metal deactivator, and the nitrogen concentration on the surface of the release layer measured by X-ray photoelectron spectroscopy is 1.5% or less.
Description
本發明係關於一種離型膜。The present invention relates to a release film.
印刷配線基板、可撓性印刷基板、多層印刷配線板等可撓性電路基板之製造步驟中使用離型膜。例如,於可撓性印刷基板之製造步驟中,使用熱硬化型接著劑或熱硬化型接著片,使覆蓋層膜熱壓接著於形成有銅電路之可撓性印刷基板本體。此時,為了防止覆蓋層膜與熱壓板接著,廣泛地使用離型膜。The release film is used in the manufacturing steps of flexible circuit boards such as printed wiring boards, flexible printed wiring boards, and multilayer printed wiring boards. For example, in the manufacturing step of the flexible printed circuit board, a thermosetting adhesive or a thermosetting adhesive sheet is used to heat and press the cover film to the flexible printed circuit board body on which the copper circuit is formed. At this time, in order to prevent the coating film from adhering to the hot platen, a release film is widely used.
例如專利文獻1中揭示有一種離型膜,其係由第一離型層、中間層及第二離型層依序積層而成,且該第一離型層及第二離型層由4-甲基-1-戊烯系聚合物構成。 先前技術文獻 專利文獻For example, Patent Document 1 discloses a release film, which is formed by sequentially stacking a first release layer, an intermediate layer, and a second release layer, and the first release layer and the second release layer consist of 4 -Methyl-1-pentene polymer composition. Prior art literature Patent literature
專利文獻1:日本特開2015-189151號公報Patent Document 1: Japanese Patent Application Publication No. 2015-189151
[發明所欲解決之課題][The problem to be solved by the invention]
已知含有4-甲基-1-戊烯系聚合物之膜對於不鏽鋼製之加壓熱板、或由聚醯亞胺膜所組成之覆蓋層膜等之離型性優異,且於170℃左右之熱壓步驟中之耐熱性亦良好。 然而,於使用含有4-甲基-1-戊烯系聚合物之膜作為可撓性電路基板之製造步驟中之離型膜之情形時,存在以下問題:即便欲對所獲得之基板上實施鍍覆處理,有時亦無法充分地得到鍍覆,產生鍍覆不良之問題。認為其係因為某些原因而使基板之表面受到污染之緣故。 又,於存在此種污染之情形時,由於需要利用藥液之洗淨等,故而會增大產品製造上之環境負荷。It is known that the film containing 4-methyl-1-pentene-based polymer has excellent release properties against pressure hot plates made of stainless steel, coating films composed of polyimide films, etc., and at 170°C The heat resistance in the hot pressing step on the left and right sides is also good. However, when a film containing 4-methyl-1-pentene-based polymer is used as a release film in the manufacturing process of a flexible circuit board, there are the following problems: In the plating process, the plating may not be sufficiently obtained, which may cause the problem of poor plating. It is believed that the surface of the substrate was contaminated due to some reasons. In addition, in the presence of such pollution, it is necessary to use a chemical solution for cleaning, etc., which will increase the environmental load on product manufacturing.
本發明係鑒於上述現狀,其目的在於:提供一種於使用於可撓性電路基板之製造步驟之情形時,不會使基板受到污染之離型膜。 [解決課題之技術手段]The present invention is based on the above-mentioned current situation, and its purpose is to provide a release film that does not contaminate the substrate when it is used in the manufacturing process of a flexible circuit substrate. [Technical means to solve the problem]
本發明係一種離型膜,其具有:含有烯烴系聚合物、及熔點為160℃以上之酚系抗氧化劑的離型層。又,本發明係一種離型膜,其具有:含有烯烴系聚合物、及金屬減活劑之離型層,且上述離型層藉由X射線光電子光譜法所測定之表面之氮濃度為1.5%以下。 以下,對本發明進行詳細說明。The present invention is a release film, which has a release layer containing an olefin-based polymer and a phenol-based antioxidant with a melting point of 160°C or higher. In addition, the present invention is a release film having a release layer containing an olefin polymer and a metal deactivator, and the nitrogen concentration on the surface of the release layer measured by X-ray photoelectron spectroscopy is 1.5 %the following. Hereinafter, the present invention will be described in detail.
本發明之發明者對於使用具有含有4-甲基-1-戊烯系聚合物等烯烴系聚合物之離型層的離型膜作為可撓性電路基板的製造步驟中之離型膜之情形時產生污染的原因進行了研究。其結果為,發現造成污染之原因在於:因烯烴系聚合物之分解,生成低分子量成分,於使用離型膜時,上述低分子量成分轉印至基板之表面。對此,本發明者對於藉由於含有烯烴系聚合物之離型層摻合酚系抗氧化劑或金屬減活劑而防止污染進行了研究。 首先,嘗試了於含有烯烴系聚合物之離型層摻合酚系抗氧化劑,但無法充分地防止污染。本發明者進而進行研究,發現酚系抗氧化劑本身成為新污染源。並且,發現藉由選擇使用熔點為160℃以上之酚系抗氧化劑,可防止因烯烴系聚合物之分解而生成之低分子量成分所造成之污染,並且亦防止酚系抗氧化劑本身所造成之污染。又,本發明者發現藉由於含有烯烴系聚合物之離型層摻合金屬減活劑、及使金屬減活劑充分地分散於烯烴系聚合物中,亦可抑制低分子量成分之生成及污染之產生,從而完成了本發明。The inventor of the present invention is concerned with the use of a release film having a release layer containing an olefin polymer such as 4-methyl-1-pentene polymer as the release film in the manufacturing process of a flexible circuit board The causes of pollution were studied. As a result, it was found that the cause of the contamination is that low molecular weight components are generated due to the decomposition of the olefin-based polymer. When a release film is used, the low molecular weight components are transferred to the surface of the substrate. In this regard, the present inventors conducted research on preventing contamination by blending a phenolic antioxidant or a metal deactivator into a release layer containing an olefin-based polymer. First, an attempt was made to blend a phenol-based antioxidant in a release layer containing an olefin-based polymer, but the contamination could not be sufficiently prevented. The inventors of the present invention conducted further studies and found that the phenol-based antioxidant itself becomes a new source of pollution. In addition, it has been found that by selecting a phenolic antioxidant with a melting point of 160°C or higher, it is possible to prevent the pollution caused by the low molecular weight components generated by the decomposition of the olefin polymer, and also prevent the pollution caused by the phenolic antioxidant itself. . In addition, the present inventors found that the release layer containing the olefin-based polymer blended with a metal deactivator and the metal deactivator was sufficiently dispersed in the olefin-based polymer to suppress the generation and contamination of low-molecular-weight components. The result is thus completed the present invention.
本發明之離型膜具有含有烯烴系聚合物之離型層。上述烯烴系聚合物無特別限定,較佳為含有4-甲基-1-戊烯系聚合物。藉由上述烯烴系聚合物含有上述4-甲基-1-戊烯系聚合物,本發明之離型膜成為對於不鏽鋼製之加壓熱板、或由聚醯亞胺膜構成之覆蓋層膜等之離型性優異,且於170℃左右之熱壓步驟中之耐熱性亦良好者。The release film of the present invention has a release layer containing an olefin-based polymer. The above-mentioned olefin-based polymer is not particularly limited, but preferably contains a 4-methyl-1-pentene-based polymer. When the above-mentioned olefin-based polymer contains the above-mentioned 4-methyl-1-pentene-based polymer, the release film of the present invention becomes a pressurized hot plate made of stainless steel or a coating film composed of a polyimide film It has excellent release properties and good heat resistance in the hot pressing step at about 170°C.
作為上述4-甲基-1-戊烯系聚合物,除4-甲基-1-戊烯之均聚物以外,可使用4-甲基-1-戊烯與4-甲基-1-戊烯以外之單體之共聚物。 作為上述4-甲基-1-戊烯以外之單體,無特別限定,例如可列舉:乙烯、丙烯、1-丁烯、1-己烯、1-辛烯、1-癸烯、1-十二烯、1-十四烯、1-十六烯、1-十八烯等碳數為20以下之α-烯烴等。 於上述4-甲基-1-戊烯系聚合物為共聚物之情形時,就發揮更高之離型性或耐熱性之觀點而言,源自4-甲基-1-戊烯之結構單元之含量較佳為80重量%,更佳為90重量%以上。 上述4-甲基-1-戊烯系聚合物例如可使用三井化學公司製造之商品名TPX(註冊商標)等市售品。As the aforementioned 4-methyl-1-pentene polymer, in addition to the homopolymer of 4-methyl-1-pentene, 4-methyl-1-pentene and 4-methyl-1-pentene can be used. Copolymer of monomers other than pentene. The monomers other than 4-methyl-1-pentene are not particularly limited, and examples include ethylene, propylene, 1-butene, 1-hexene, 1-octene, 1-decene, 1- Dodecene, 1-tetradecene, 1-hexadecene, 1-octadecene and other α-olefins with a carbon number of 20 or less. When the 4-methyl-1-pentene polymer is a copolymer, it is derived from the structure of 4-methyl-1-pentene from the viewpoint of exerting higher releasability or heat resistance The content of the unit is preferably 80% by weight, more preferably 90% by weight or more. For the above-mentioned 4-methyl-1-pentene-based polymer, commercially available products such as the trade name TPX (registered trademark) manufactured by Mitsui Chemicals Co., Ltd. can be used, for example.
上述烯烴系聚合物中之上述4-甲基-1-戊烯系聚合物之含量無特別限定,就發揮更高之離型性或耐熱性之觀點而言,較佳為50重量%,更佳為70重量%以上。上述4-甲基-1-戊烯系聚合物之含量之上限無特別限定,亦可為100重量%。 於上述烯烴系聚合物含有上述4-甲基-1-戊烯系聚合物以外之烯烴系聚合物之情形時,作為上述4-甲基-1-戊烯系聚合物以外之烯烴系聚合物,無特別限定,例如可利用使用碳數為20以下之α-烯烴等而獲得之烯烴系聚合物。作為上述碳數為20以下之α-烯烴,具體而言,例如可列舉:乙烯、丙烯、1-丁烯、1-己烯、1-辛烯、1-癸烯、1-十二烯、1-十四烯、1-十六烯、1-十八烯等。The content of the 4-methyl-1-pentene-based polymer in the olefin-based polymer is not particularly limited, but from the viewpoint of exhibiting higher releasability or heat resistance, it is preferably 50% by weight, and more Preferably, it is 70% by weight or more. The upper limit of the content of the 4-methyl-1-pentene-based polymer is not particularly limited, and it may be 100% by weight. When the above-mentioned olefin-based polymer contains an olefin-based polymer other than the above-mentioned 4-methyl-1-pentene-based polymer, it shall be regarded as an olefin-based polymer other than the above-mentioned 4-methyl-1-pentene-based polymer It is not particularly limited, and for example, an olefin polymer obtained by using α-olefin having 20 or less carbon atoms can be used. As the above-mentioned α-olefin having a carbon number of 20 or less, specifically, for example, ethylene, propylene, 1-butene, 1-hexene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene, 1-hexadecene, 1-octadecene, etc.
上述離型層中之上述烯烴系聚合物之含量無特別限定,通常,上述烯烴系聚合物係作為上述離型層之主成分者,上述烯烴系聚合物之含量之較佳之下限為50重量%,較佳之上限為99重量%。若上述烯烴系聚合物之含量為該範圍內,則可提高離型性或耐熱性,且防止基板之污染。上述烯烴系聚合物之含量之更佳之下限為70重量%,更佳之上限為95重量%。The content of the olefin polymer in the release layer is not particularly limited. Generally, when the olefin polymer is the main component of the release layer, the lower limit of the content of the olefin polymer is preferably 50% by weight , The preferred upper limit is 99% by weight. If the content of the above-mentioned olefin-based polymer is within this range, release properties or heat resistance can be improved, and contamination of the substrate can be prevented. The lower limit of the content of the olefin-based polymer is more preferably 70% by weight, and the upper limit is more preferably 95% by weight.
本發明之第1態樣中,上述離型層含有酚系抗氧化劑。 已知烯烴系聚合物藉由光、熱或金屬與氧共存,而進行自由基反應,生成低分子量成分。下述式(1)表示烯烴系聚合物分解而生成低分子量成分之一系列反應之反應式。 式(1)中,R表示烷基鏈。 可認為烯烴系聚合物中,尤其較多地含有C-H鍵之4-甲基-1-戊烯系聚合物易產生低分子量成分。In the first aspect of the present invention, the release layer contains a phenolic antioxidant. It is known that olefin-based polymers undergo a radical reaction by light, heat, or the coexistence of metal and oxygen to generate low molecular weight components. The following formula (1) represents a reaction formula of a series of reactions that decompose an olefin-based polymer to produce a low-molecular-weight component. In formula (1), R represents an alkyl chain. It is considered that among olefin polymers, 4-methyl-1-pentene polymers containing many C-H bonds are prone to produce low-molecular-weight components.
上述酚系抗氧化劑係於上述式(1)之第2個反應,即自RH生成之R・與氧進行反應,產生ROO・,該ROO・與RH進行反應,生成R・之所謂自由基連鎖反應b中,藉由捕捉自由基,可抑制生成一系列之低分子量成分之反應之進行,防止基板之污染。The above-mentioned phenol-based antioxidant is in the second reaction of the above formula (1), that is, R· generated from RH reacts with oxygen to produce ROO·, and the ROO· reacts with RH to produce R·, the so-called free radical chain In reaction b, by capturing free radicals, the progress of the reaction that generates a series of low-molecular-weight components can be inhibited, and the contamination of the substrate can be prevented.
於可撓性電路基板之製造步驟中,通常於160~200℃、3~10 MPa、2~10分鐘左右之條件下進行熱壓。該熱壓過程中酚系抗氧化劑之一部分揮發亦成為基板污染之原因。 本發明之第1態樣中,選擇使用熔點為160℃以上之酚系抗氧化劑(以下,亦稱為「高熔點酚系抗氧化劑」)作為酚系抗氧化劑。藉由使用高熔點酚系抗氧化劑,可防止因烯烴系聚合物之分解而生成之低分子量成分所造成之污染,並且亦防止酚系抗氧化劑本身所造成之污染。In the manufacturing step of the flexible circuit board, the hot pressing is usually performed under the conditions of 160-200°C, 3-10 MPa, and 2-10 minutes. Part of the phenolic antioxidants volatilized during the hot pressing process also became a cause of substrate contamination. In the first aspect of the present invention, a phenolic antioxidant having a melting point of 160° C. or higher (hereinafter, also referred to as "high melting point phenolic antioxidant") is selected as the phenolic antioxidant. By using high melting point phenol antioxidants, it is possible to prevent pollution caused by low molecular weight components generated by the decomposition of olefin polymers, and also prevent pollution caused by phenol antioxidants themselves.
作為上述高熔點酚系抗氧化劑,若為熔點為160℃以上,且於分子內具有苯酚結構之化合物,則無特別限定,可使用受阻酚(hindered phenol)系抗氧化劑。再者,所謂受阻酚結構,意指於酚性羥基之鄰位存在體積大之原子團。作為上述受阻酚系抗氧化劑,較佳為具有酚性羥基,且於該酚性羥基之鄰位具有分枝狀烷基之化合物。作為上述受阻酚系抗氧化劑,具體而言,例如可列舉:N,N'-己烷-1,6-二基雙(3-(3,5-二三級丁基-4-羥基苯基丙醯胺))、1,3,5-參(3,5-二三級丁基-4-羥基苄基)-1,3,5-三-2,4,6(1H,3H,5H)-三酮、3,3',3'',5,5',5''-六三級丁基-α,α',α''-(對稱三甲苯-2,4,6-三基)三對甲酚等。該等高熔點酚系抗氧化劑可單獨地使用,亦可併用2種以上。 上述受阻酚系抗氧化劑例如可使用:Irganox 1098(熔點160℃,BASF公司製造)、Irganox 3114(熔點221℃,BASF公司製造)、Irganox 1330(熔點240℃,BASF公司製造)等市售品。 上述高熔點酚系抗氧化劑之分子量無特別限定,就充分地分散於上述烯烴系聚合物中之觀點、更進一步防止基板之污染之觀點等而言,較佳之下限為200,較佳之上限為1000,更佳之下限為500,更佳之上限為800。As the above-mentioned high melting point phenol-based antioxidant, if it is a compound having a melting point of 160° C. or higher and having a phenol structure in the molecule, it is not particularly limited, and a hindered phenol-based antioxidant can be used. Furthermore, the so-called hindered phenol structure means that there is a bulky atomic group at the ortho position of the phenolic hydroxyl group. The hindered phenol antioxidant is preferably a compound having a phenolic hydroxyl group and a branched alkyl group at the ortho position of the phenolic hydroxyl group. Specific examples of the hindered phenol-based antioxidant include: N,N'-hexane-1,6-diylbis(3-(3,5-di-tertiarybutyl-4-hydroxyphenyl) Propylamine)), 1,3,5-ginseng (3,5-di-tertiary butyl-4-hydroxybenzyl)-1,3,5-tri -2,4,6(1H,3H,5H)-Triketone, 3,3',3``,5,5',5''-hexateributyl-α,α',α''- (Symmetric trimethylbenzene-2,4,6-triyl) tri-p-cresol and so on. These high melting point phenol-based antioxidants may be used singly, or two or more of them may be used in combination. As the hindered phenol antioxidant, for example, commercially available products such as Irganox 1098 (melting point 160°C, manufactured by BASF Corporation), Irganox 3114 (melting point 221°C, manufactured by BASF Corporation), and Irganox 1330 (melting point 240°C, manufactured by BASF Corporation), can be used. The molecular weight of the high melting point phenol antioxidant is not particularly limited. From the viewpoint of being sufficiently dispersed in the olefin polymer and the viewpoint of further preventing contamination of the substrate, the preferred lower limit is 200, and the preferred upper limit is 1000 , A more preferable lower limit is 500, and a more preferable upper limit is 800.
上述離型層中之上述高熔點酚系抗氧化劑之含量無特別限定,相對於上述烯烴系聚合物100重量份之較佳之下限為0.1重量份,較佳之上限為1.0重量份。若上述高熔點酚系抗氧化劑之含量為該範圍內,則可於不會對離型性或耐熱性產生影響之情況下,防止基板之污染。上述高熔點酚系抗氧化劑之含量之更佳之下限為0.3重量份,更佳之上限為0.7重量份。The content of the high-melting phenol-based antioxidant in the release layer is not particularly limited. The lower limit is preferably 0.1 parts by weight, and the upper limit is preferably 1.0 parts by weight relative to 100 parts by weight of the olefin-based polymer. If the content of the above-mentioned high-melting phenol-based antioxidant is within this range, it is possible to prevent contamination of the substrate without affecting release properties or heat resistance. The lower limit of the content of the high melting point phenol antioxidant is more preferably 0.3 parts by weight, and the upper limit is more preferably 0.7 parts by weight.
本發明之第1態樣中,上述離型層亦可於不損害本發明之目的之範圍內,進而含有磷系抗氧化劑或硫系抗氧化劑。該等抗氧化劑由於可使上述式(1)之一系列之反應中所產生之過氧化物分解,故而可更進一步防止基板之污染。In the first aspect of the present invention, the above-mentioned release layer may further contain a phosphorus-based antioxidant or a sulfur-based antioxidant within a range that does not impair the purpose of the present invention. These antioxidants can decompose the peroxides generated in the series of reactions of the above formula (1), and therefore can further prevent the contamination of the substrate.
本發明之第1態樣中,上述離型層亦可於不損害本發明之目的之範圍內,進而含有金屬減活劑。金屬減活劑係藉由對金屬元素進行配位,而可捕捉金屬觸媒並使其不活化之化合物。藉由摻合金屬減活劑,而於上述式(1)之尤其最初之反應,即自RH生成R・之裂解反應a中,可捕捉作為觸媒之金屬,抑制裂解反應a,更進一步防止基板之污染。In the first aspect of the present invention, the above-mentioned release layer may further contain a metal deactivator within a range that does not impair the purpose of the present invention. The metal deactivator is a compound that can capture and inactivate the metal catalyst by coordinating metal elements. By blending a metal deactivator, in the first reaction of the above formula (1), that is, the cleavage reaction a of generating R from RH, it can capture the metal as a catalyst, inhibit the cleavage reaction a, and further prevent Contamination of the substrate.
本發明之第1態樣中,較佳為上述離型層藉由X射線光電子光譜法所測定之表面之氧濃度為1.2%以下。 上述烯烴系聚合物與上述高熔點酚系抗氧化劑一般而言相容性較低,即便僅於烯烴系聚合物摻合高熔點酚系抗氧化劑,有時高熔點酚系抗氧化劑亦未分散於烯烴系聚合物中。如此低分散之狀態下,有時無法充分地發揮抑制生成低分子量成分之反應之進行的效果。又,若上述高熔點酚系抗氧化劑大量地存在於表面,則於使用離型膜時,有時高熔點酚系抗氧化劑本身轉印至基板之表面,造成污染。本發明者發現藉由實施後述之上述離型層之製造方法,可使高熔點酚系抗氧化劑充分地分散於烯烴系聚合物中,可進一步抑制污染性。 如此高熔點酚系抗氧化劑充分地分散於烯烴系聚合物中之離型層中,高熔點酚系抗氧化劑不會偏於離型層之表面析出。因此,藉由著眼於高熔點酚系抗氧化劑所含有之氧,藉由X射線光電子光譜法測定離型層之表面之氧濃度,可對烯烴系聚合物中之高熔點酚系抗氧化劑之分散狀態進行評價。即,於藉由X射線光電子光譜法所測定之離型層之表面之氧濃度為1.2%以下時,可判斷高熔點酚系抗氧化劑充分地分散於烯烴系聚合物中。上述表面之氧濃度較佳為0.9%以下,更佳為0.6%以下。In the first aspect of the present invention, it is preferable that the oxygen concentration on the surface of the release layer measured by X-ray photoelectron spectroscopy is 1.2% or less. The above-mentioned olefin-based polymer and the above-mentioned high-melting phenol-based antioxidant generally have low compatibility. Even if only the olefin-based polymer is blended with a high-melting-point phenol-based antioxidant, sometimes the high-melting-point phenol-based antioxidant is not dispersed in the In olefin-based polymers. In such a low-dispersion state, the effect of suppressing the progress of the reaction that produces low-molecular-weight components may not be sufficiently exerted in some cases. In addition, if the above-mentioned high melting point phenolic antioxidant is present on the surface in large amounts, when a release film is used, the high melting point phenolic antioxidant itself may be transferred to the surface of the substrate, causing contamination. The inventors of the present invention have discovered that by implementing the method for producing the release layer described below, the high melting point phenol-based antioxidant can be sufficiently dispersed in the olefin-based polymer, and the contamination can be further suppressed. In this way, the high melting point phenol antioxidant is fully dispersed in the release layer of the olefin polymer, and the high melting point phenol antioxidant will not precipitate on the surface of the release layer. Therefore, by focusing on the oxygen contained in the high melting point phenolic antioxidant and measuring the oxygen concentration on the surface of the release layer by X-ray photoelectron spectroscopy, it is possible to disperse the high melting point phenolic antioxidant in the olefin polymer Status is evaluated. That is, when the oxygen concentration on the surface of the release layer measured by X-ray photoelectron spectroscopy is 1.2% or less, it can be judged that the high-melting phenol-based antioxidant is sufficiently dispersed in the olefin-based polymer. The oxygen concentration on the surface is preferably 0.9% or less, more preferably 0.6% or less.
離型膜表面之氧濃度可藉由使用X射線光電子光譜機(ULVAC-PHI公司製造,Versa Probe II),於單色化Al Kα射線之X射線光源、檢測角45度、STEP寬度1 eV之條件下進行寬掃描而測定。本測定中,可測定距表面約5 nm之區域之氧濃度。表面氧濃度可使用下述計算式求出。 表面氧濃度(%)=(IO/SO)/(IC/SC)×100 (IO:氧之光電子強度、IC:碳之光電子強度、SC:碳之相對感度係數、SO:氧之相對感度係數) 再者,各元素之光電子強度係將利用寬掃描所測定之光電子強度分別於下述範圍內進行積分而獲得之值。 C1s :280-300 eV、O1s :520-540 eV 又,本說明書中之氧濃度以SC=0.314、SO=0.733算出。The oxygen concentration on the surface of the release film can be determined by using an X-ray photoelectron spectrometer (manufactured by ULVAC-PHI, Versa Probe II) in the monochromatic Al Kα ray X-ray source, a detection angle of 45 degrees, and a STEP width of 1 eV. Measured under wide scan conditions. In this measurement, the oxygen concentration in the area about 5 nm from the surface can be measured. The surface oxygen concentration can be calculated using the following calculation formula. Surface oxygen concentration (%)=(IO/SO)/(IC/SC)×100 (IO: photoelectron intensity of oxygen, IC: photoelectron intensity of carbon, SC: relative sensitivity coefficient of carbon, SO: relative sensitivity coefficient of oxygen ) Furthermore, the photoelectron intensity of each element is a value obtained by integrating the photoelectron intensity measured by the wide scan in the following ranges. C 1s : 280-300 eV, O 1s : 520-540 eV In addition, the oxygen concentration in this specification is calculated with SC=0.314 and SO=0.733.
本發明之第2態樣中,上述離型層含有金屬減活劑。如上所述,已知烯烴系聚合物藉由光、熱或金屬與氧共存,而進行自由基反應,生成低分子量成分。將作為烯烴系聚合物分解而生成低分子量成分之一系列之反應之反應式之上述式(1)再次示於下。 式(1)中,R表示烷基鏈。In a second aspect of the present invention, the release layer contains a metal deactivator. As described above, it is known that olefin-based polymers undergo a radical reaction by light, heat, or the coexistence of metal and oxygen to generate low-molecular-weight components. The above-mentioned formula (1), which is a series of reactions in which the olefin-based polymer is decomposed to produce low-molecular-weight components, is again shown below. In formula (1), R represents an alkyl chain.
上述式(1)之尤其最初之反應,即自RH生成R・之裂解反應a係藉由金屬而發揮觸媒作用。具有含有烯烴系聚合物之離型層之離型膜中,合成烯烴系聚合物時所使用之Ti、Zr、Hf、Al等金屬觸媒以殘渣之形式存在。可認為藉由將此種離型膜於熱壓時進行加熱,而進行上述裂解反應a,推進生成低分子量成分之反應。可認為於烯烴系聚合物中,尤其是較多地含有C-H鍵之4-甲基-1-戊烯系聚合物易產生低分子量成分。In particular, the first reaction of the above formula (1), that is, the cleavage reaction a of generating R from RH, uses metal to act as a catalyst. In the release film with a release layer containing an olefin-based polymer, the metal catalysts such as Ti, Zr, Hf, Al, etc. used in the synthesis of the olefin-based polymer exist in the form of residues. It is considered that by heating such a release film during hot pressing, the cleavage reaction a proceeds, and the reaction for generating low molecular weight components is promoted. It is considered that among olefin-based polymers, 4-methyl-1-pentene-based polymers containing a large amount of C-H bonds are likely to produce low-molecular-weight components.
本發明之第2態樣中,可認為藉由於烯烴系聚合物併用金屬減活劑,可使該金屬減活劑捕捉金屬觸媒,抑制上述裂解反應a,抑制生成一系列之低分子量成分之反應之進行,防止基板之污染。In the second aspect of the present invention, it can be considered that by using the olefin polymer in combination with a metal deactivator, the metal deactivator can capture the metal catalyst, inhibit the above-mentioned cracking reaction a, and inhibit the formation of a series of low molecular weight components. The reaction proceeds to prevent contamination of the substrate.
上述金屬減活劑意指藉由對金屬元素進行配位,可捕捉金屬觸媒並使其不活化之化合物。更具體而言,例如可列舉於分子內具有氮原子之金屬減活劑,更具體而言,例如可列舉於分子內具有醯肼結構或醯胺結構之化合物。上述於分子內具有醯肼結構或醯胺結構之化合物藉由經由該醯肼結構或醯胺結構對金屬元素進行配位,可捕捉金屬觸媒並使其不活化。The aforementioned metal deactivator means a compound that can capture and inactivate the metal catalyst by coordinating metal elements. More specifically, for example, a metal deactivator having a nitrogen atom in the molecule can be cited, and more specifically, for example, a compound having a hydrazine structure or an amide structure in the molecule can be cited. The above-mentioned compound having a hydrazine structure or amide structure in the molecule can capture and inactivate the metal catalyst by coordinating the metal element through the hydrazine structure or amide structure.
作為上述於分子內具有醯肼結構之金屬減活劑,具體而言,例如可列舉:N,N'-雙[3-(3,5-二三級丁基-4-羥基苯基)丙醯基]肼、1,3,5-三-2,4,6-三胺、2',3-雙[[3-[3,5-二三級丁基-4-羥基苯基]丙醯基]]丙醯肼等。 上述於分子內具有醯肼結構之金屬減活劑例如可使用:Adekastab CDA-10(ADEKA公司製造)、Adekastab ZS-27(ADEKA公司製造)、Adekastab ZS-90(ADEKA公司製造)、Adekastab ZS-91(ADEKA公司製造)、IRGANOX MD1024(BASF公司製造)等市售品。As the above-mentioned metal deactivator having a hydrazine structure in the molecule, specifically, for example, N,N'-bis[3-(3,5-ditributyl-4-hydroxyphenyl)propane Amino]hydrazine, 1,3,5-tri -2,4,6-triamine, 2',3-bis[[3-[3,5-di-tertiarybutyl-4-hydroxyphenyl]propionyl]]propanhydrazine, etc. The above-mentioned metal deactivator having a hydrazine structure in the molecule can be used, for example: Adekastab CDA-10 (manufactured by ADEKA), Adekastab ZS-27 (manufactured by ADEKA), Adekastab ZS-90 (manufactured by ADEKA), Adekastab ZS- 91 (manufactured by ADEKA), IRGANOX MD1024 (manufactured by BASF) and other commercially available products.
作為上述於分子內具有醯胺結構之金屬減活劑,具體而言,例如可列舉:羥基-N-1H-1,2,4-三唑-3-基苯甲醯胺、羥基-N-1H-1,2,4-三唑-3-基苯甲醯胺、N'1,N'12-雙(2-羥基苯甲醯基)十二烷二肼、N,N'-二亞柳基-1,2-二胺基丙烷等。 上述於分子內具有醯胺結構之金屬減活劑例如可使用:Adekastab CDA-1(ADEKA公司製造)、Adekastab CDA-1M(ADEKA公司製造)、Adekastab CDA-6(ADEKA公司製造)、Securis AK-24M(三洋化成工業公司製造)、DMD(杜邦公司製造)等市售品。As the metal deactivator having an amide structure in the molecule, specifically, for example, hydroxy-N-1H-1,2,4-triazol-3-ylbenzamide, hydroxy-N- 1H-1,2,4-triazol-3-ylbenzamide, N'1,N'12-bis(2-hydroxybenzyl)dodecane dihydrazine, N,N'-diylidene Saluyl-1,2-diaminopropane and so on. The above-mentioned metal deactivator having an amide structure in the molecule can be used, for example: Adekastab CDA-1 (manufactured by ADEKA), Adekastab CDA-1M (manufactured by ADEKA), Adekastab CDA-6 (manufactured by ADEKA), Securis AK- 24M (manufactured by Sanyo Chemical Industry Co., Ltd.), DMD (manufactured by DuPont) and other commercially available products.
上述金屬減活劑可單獨地使用,亦可併用2種以上。其中,就可相對容易地分散於上述烯烴系聚合物中而言,較佳為分子量為500以下之金屬減活劑。 又,就可同時地賦予抗氧化性而言,亦較佳為於分子內具有受阻酚結構之金屬減活劑。The above-mentioned metal deactivator may be used singly, or two or more kinds may be used in combination. Among them, a metal deactivator having a molecular weight of 500 or less is preferred in terms of being relatively easily dispersed in the above-mentioned olefin-based polymer. In addition, in terms of simultaneously imparting antioxidant properties, a metal deactivator having a hindered phenol structure in the molecule is also preferable.
上述離型層中之上述金屬減活劑之含量無特別限定,相對於上述烯烴系聚合物100重量份,較佳為0.1重量份以上。若上述金屬減活劑之含量少於0.1重量份,則有時無法充分地抑制烯烴系聚合物之分解(生成低分子量成分之反應之進行)。上述金屬減活劑之含量更佳為0.3重量份以上。 上述離型層中之上述金屬減活劑之含量之上限無特別限定,就離型性或耐熱性之觀點而言,相對於上述烯烴系聚合物100重量份,較佳為1.0重量份以下,更佳為0.7重量份以下。The content of the metal deactivator in the release layer is not particularly limited, but it is preferably 0.1 part by weight or more relative to 100 parts by weight of the olefin-based polymer. If the content of the above-mentioned metal deactivator is less than 0.1 parts by weight, the decomposition of the olefin polymer (the progress of the reaction to produce low molecular weight components) may not be sufficiently suppressed in some cases. The content of the above-mentioned metal deactivator is more preferably 0.3 parts by weight or more. The upper limit of the content of the metal deactivator in the release layer is not particularly limited. From the viewpoint of release properties or heat resistance, it is preferably 1.0 part by weight or less relative to 100 parts by weight of the olefin-based polymer. More preferably, it is 0.7 parts by weight or less.
本發明之第2態樣中,上述離型層藉由X射線光電子光譜法所測定之表面之氮濃度為1.5%以下。 上述烯烴系聚合物與上述金屬減活劑一般而言相容性較低,即便僅於烯烴系聚合物摻合金屬減活劑,有時金屬減活劑亦未分散於烯烴系聚合物中,且無法充分地發揮抑制生成低分子量成分之反應之進行的效果。又,若上述金屬減活劑大量地存在於表面,則於使用離型膜時,有時金屬減活劑本身轉印至基板之表面,造成污染。本發明者發現藉由實施後述之上述離型層之製造方法,可使金屬減活劑充分地分散於烯烴系聚合物中,進而可抑制污染性。如此金屬減活劑充分地分散於烯烴系聚合物中之離型層中,金屬減活劑不會偏於離型層之表面析出。In the second aspect of the present invention, the nitrogen concentration on the surface of the release layer measured by X-ray photoelectron spectroscopy is 1.5% or less. The above-mentioned olefin-based polymer and the above-mentioned metal deactivator generally have low compatibility. Even if only the olefin-based polymer is blended with the metal deactivator, the metal deactivator may not be dispersed in the olefin-based polymer. And the effect of suppressing the progress of the reaction that produces low-molecular-weight components cannot be fully exhibited. In addition, if the metal deactivator mentioned above is present on the surface in a large amount, when a release film is used, the metal deactivator itself may be transferred to the surface of the substrate, causing contamination. The inventors of the present invention found that by implementing the method for producing the release layer described below, the metal deactivator can be sufficiently dispersed in the olefin-based polymer, and the contamination can be suppressed. In this way, the metal deactivator is fully dispersed in the release layer of the olefin polymer, and the metal deactivator will not be deposited on the surface of the release layer.
烯烴系聚合物中之金屬減活劑之分散狀態可藉由著眼於金屬減活劑所含有之特定之原子,測定離型層之表面之濃度而進行評價。離型層之表面中的特定之原子之濃度可藉由X射線光電子光譜法進行測定。例如,於使用於分子內具有醯肼結構或醯胺結構之化合物作為金屬減活劑之情形時,可著眼於氮原子作為上述特定之原子而進行評價。即,於藉由X射線光電子光譜法所測定之離型層之表面之氮濃度為1.5%以下時,金屬減活劑充分地分散於烯烴系聚合物中。上述表面之氮濃度較佳為0.9%以下,更佳為0.7%以下。The dispersion state of the metal deactivator in the olefin polymer can be evaluated by focusing on the specific atoms contained in the metal deactivator and measuring the surface concentration of the release layer. The concentration of specific atoms in the surface of the release layer can be measured by X-ray photoelectron spectroscopy. For example, when a compound having a hydrazine structure or an amide structure in the molecule is used as a metal deactivator, the evaluation can be made focusing on the nitrogen atom as the above-mentioned specific atom. That is, when the nitrogen concentration on the surface of the release layer measured by X-ray photoelectron spectroscopy is 1.5% or less, the metal deactivator is sufficiently dispersed in the olefin-based polymer. The nitrogen concentration on the surface is preferably 0.9% or less, more preferably 0.7% or less.
離型膜表面之氮濃度可藉由使用X射線光電子光譜機(ULVAC-PHI公司製造,Versa Probe II),於單色化Al Kα射線之X射線光源、檢測角45度、STEP寬度1 eV之條件下進行寬掃描而進行測定。本測定中,可測定距表面約5 nm之區域之氮濃度。表面氮濃度可使用下述計算式求出。 表面氮濃度(%)=(IN/SN)/(IC/SC)×100 (IN:氮之光電子強度、IC:碳之光電子強度、SC:碳之相對感度係數、SN:氮之相對感度係數) 再者,各元素之光電子強度係將利用寬掃描所測定之光電子強度分別於下述範圍內進行積分而獲得之值。 C1s :280-300 eV、N1s :390-410 eV 又,本說明書中之氮濃度以SC=0.314、SN=0.499算出。The nitrogen concentration on the surface of the release film can be determined by using an X-ray photoelectron spectrometer (manufactured by ULVAC-PHI, Versa Probe II) in the monochromatic Al Kα ray X-ray light source, the detection angle is 45 degrees, and the STEP width is 1 eV. Under the conditions, a wide scan is performed and the measurement is performed. In this measurement, the nitrogen concentration in the area about 5 nm from the surface can be measured. The surface nitrogen concentration can be calculated using the following calculation formula. Surface nitrogen concentration (%)=(IN/SN)/(IC/SC)×100 (IN: photoelectron intensity of nitrogen, IC: photoelectron intensity of carbon, SC: relative sensitivity coefficient of carbon, SN: relative sensitivity coefficient of nitrogen ) Furthermore, the photoelectron intensity of each element is a value obtained by integrating the photoelectron intensity measured by the wide scan in the following ranges. C 1s : 280-300 eV, N 1s : 390-410 eV In addition, the nitrogen concentration in this specification is calculated with SC=0.314 and SN=0.499.
本發明之第2態樣中,上述離型層亦可於不損害本發明之目的、效果之範圍內,進而含有抗氧化劑。 例如,酚系抗氧化劑可於上述式(1)之第2個反應,即自RH生成之R・與氧進行反應而產生ROO・,該ROO・與RH進行反應而生成R・之所謂自由基連鎖反應b中,捕捉自由基。藉此,由於可抑制生成一系列之低分子量成分之反應之進行,故而可更進一步防止基板之污染。此時,藉由選擇使用熔點為160℃以上之酚系抗氧化劑作為酚系抗氧化劑,可防止起因於酚系抗氧化劑本身揮發之基板之污染。 又,例如磷系抗氧化劑或硫系抗氧化劑藉由使上述式(1)之一系列之反應中所生成之過氧化物分解,可更進一步防止基板之污染。In the second aspect of the present invention, the above-mentioned release layer may further contain an antioxidant within a range that does not impair the purpose and effects of the present invention. For example, phenolic antioxidants can react in the second reaction of the above formula (1), that is, R· generated from RH reacts with oxygen to generate ROO·, and the ROO· reacts with RH to generate the so-called free radicals of R· In chain reaction b, free radicals are captured. Thereby, since the progress of the reaction that generates a series of low molecular weight components can be suppressed, the contamination of the substrate can be further prevented. At this time, by choosing to use a phenol-based antioxidant with a melting point of 160° C. or higher as the phenol-based antioxidant, it is possible to prevent the contamination of the substrate caused by the volatilization of the phenol-based antioxidant itself. In addition, for example, phosphorus-based antioxidants or sulfur-based antioxidants can further prevent the contamination of the substrate by decomposing the peroxide generated in the series of reactions of the above formula (1).
本發明之第1及第2態樣中,上述離型層亦可進而含有纖維、無機填充劑、穩定劑、阻燃劑、紫外線吸收劑、抗靜電劑、無機物、高級脂肪酸鹽等先前公知之添加劑。In the first and second aspects of the present invention, the release layer may further contain fibers, inorganic fillers, stabilizers, flame retardants, ultraviolet absorbers, antistatic agents, inorganic substances, higher fatty acid salts, etc., which are previously known additive.
本發明之第1及第2態樣中,上述離型層亦能夠以提高離型性為目的而實施離型處理。上述離型處理之方法無特別限定,例如可使用:於上述離型層塗佈或噴灑聚矽氧系、氟系等離型劑之方法;進行熱處理之方法等公知之方法。該等離型處理可單獨地使用,亦可併用2種以上。In the first and second aspects of the present invention, the above-mentioned release layer can also be subjected to a release treatment for the purpose of improving release properties. The method of the release treatment is not particularly limited. For example, a method of coating or spraying a silicone-based, fluorine-based release agent on the release layer; a method of heat treatment and other known methods can be used. These release treatments may be used singly or in combination of two or more kinds.
本發明之第1及第2態樣中,上述離型層之厚度無特別限定,較佳之下限為5 μm,較佳之上限為75 μm。若上述離型層之厚度為該範圍內,則當於印刷配線基板、可撓性印刷基板、多層印刷配線板等製造步驟中使用時,可獲得強度與對於可撓性電路基板之凹凸之追隨性等之平衡。上述離型層之厚度之更佳之下限為10 μm,更佳之上限為30 μm。In the first and second aspects of the present invention, the thickness of the release layer is not particularly limited, and the preferred lower limit is 5 μm, and the preferred upper limit is 75 μm. If the thickness of the above-mentioned release layer is within this range, when it is used in the manufacturing steps of a printed wiring board, a flexible printed circuit board, a multilayer printed wiring board, etc., the strength and the conformability to the unevenness of the flexible circuit board can be obtained. The balance of sex. The lower limit of the thickness of the above-mentioned release layer is more preferably 10 μm, and the more preferable upper limit is 30 μm.
本發明之第1及第2態樣中,製造上述離型層之方法無特別限定,例如可列舉以下之方法等:於上述烯烴系聚合物加入上述高熔點酚系抗氧化劑或上述金屬減活劑、及視需要添加之添加劑,進行混練後,進行擠出成形。 然而,為了如上述般使高熔點酚系抗氧化劑或金屬減活劑充分地分散於烯烴系聚合物中,例如較佳為採用(1)將烯烴系聚合物與高熔點酚系抗氧化劑或金屬減活劑進行加熱混練而製造母料,將該母料供於擠出成形之方法。又,較佳為採用(2)於擠出成形時,使用同向旋轉型雙軸擠出機(雙頭),提高混練性之方法。進而較佳為採用(3)藉由調整擠出成形時之溫度、混練時間、擠出量、線速等,提高混練性之方法。尤佳為於擠出成型之初始階段(T字模出口附近)使溫度變高,經過固定時間後使其降溫,且使直至成型結束為止之時間變長。更具體而言,較佳為將相對於料缸全長,距入口側20~40%之位置處之設定溫度設定為約330~360℃。過去,由於在高溫環境下烯烴系聚合物進行分解,故而於將烯烴系聚合物進行擠出成型之情形時,通常並未進行加熱至分解開始之300℃以上之操作。另一方面,如上述般藉由於成型之初始階段刻意升溫至300℃以上,其後使其降溫至300℃以下,可增大分子之運動性。又,較佳為減小線速。藉由使擠出成型所花費之時間變長,可確保高熔點酚系抗氧化劑或金屬減活劑分散之時間。藉由此種溫度與線速之調整,可促進高熔點酚系抗氧化劑或金屬減活劑之擴散。 藉由採用上述(1)~(3)之至少任一種方法,或組合採用較佳為2種以上之方法、進而較佳為3種以上之方法,可使高熔點酚系抗氧化劑或金屬減活劑充分地分散於烯烴系聚合物中。In the first and second aspects of the present invention, the method for producing the release layer is not particularly limited, and examples include the following methods: adding the high melting point phenol antioxidant or the metal deactivation to the olefin polymer After mixing and kneading, it is extruded. However, in order to sufficiently disperse the high melting point phenolic antioxidant or metal deactivator in the olefin polymer as described above, for example, it is preferable to adopt (1) the olefin polymer and the high melting point phenol antioxidant or metal The deactivator is heated and kneaded to produce a masterbatch, and the masterbatch is used for extrusion molding. In addition, it is preferable to adopt (2) a method of using a co-rotating twin-screw extruder (double-headed) during extrusion molding to improve kneading properties. Furthermore, it is preferable to adopt (3) a method of improving the kneading property by adjusting the temperature, kneading time, extrusion amount, line speed, etc. during extrusion molding. It is particularly preferable to increase the temperature during the initial stage of extrusion molding (near the exit of the T-die), and to decrease the temperature after a fixed time has passed, and to increase the time until the end of the molding process. More specifically, it is preferable to set the set temperature at a position 20 to 40% away from the inlet side with respect to the full length of the cylinder to approximately 330 to 360°C. In the past, since the olefin-based polymer was decomposed in a high-temperature environment, when the olefin-based polymer was subjected to extrusion molding, the operation of heating to 300°C or higher at which decomposition started was usually not performed. On the other hand, as mentioned above, by deliberately raising the temperature to above 300°C in the initial stage of molding, and then cooling it to below 300°C, the mobility of the molecules can be increased. In addition, it is preferable to reduce the line speed. By making the time spent in extrusion molding longer, the time for the high melting point phenolic antioxidant or metal deactivator to disperse can be ensured. By adjusting the temperature and line speed, the diffusion of high melting point phenol antioxidants or metal deactivators can be promoted. By using at least any one of the methods (1) to (3) above, or using a combination of preferably two or more methods, and more preferably three or more methods, the high melting point phenol antioxidants or metals can be reduced The active agent is sufficiently dispersed in the olefin-based polymer.
本發明之離型膜可為僅由上述離型層構成之單層結構,亦可為由上述離型層與基材層構成之2層結構。又,可為上述離型層、中間層(緩衝層)、離型層依序積層而成之3層結構,亦可為進而具有其他層之多層結構。 作為上述基材層或中間層,可使用於離型膜之技術領域中先前公知者。The release film of the present invention may have a single-layer structure composed only of the above-mentioned release layer, or may have a two-layer structure composed of the above-mentioned release layer and a substrate layer. In addition, it may have a three-layer structure in which the above-mentioned release layer, intermediate layer (buffer layer), and release layer are sequentially laminated, or may have a multi-layer structure further having other layers. As the aforementioned base layer or intermediate layer, those previously known in the technical field of release films can be used.
本發明之離型膜之用途無特別限定,尤其適於可撓性電路基板之製造。具體而言,例如於印刷配線基板、可撓性印刷基板、多層印刷配線板等可撓性電路基板之製造步驟中,可較佳地用作經由預浸體或耐熱膜將覆銅積層板或銅箔熱壓於基板時之離型膜。又,於可撓性印刷基板之製造步驟中,為了防止於藉由熱硬化型接著劑或熱硬化型接著片將覆蓋層膜熱壓接著於形成有銅電路之可撓性印刷基板本體時,覆蓋層膜與熱壓板接著,可較佳地用作離型膜。進而,於使用模具將半導體晶片利用樹脂進行密封而獲得成型品之半導體模製步驟中,可較佳地用作被覆模具內表面而防止因樹脂造成之模具之污染之離型膜。 [發明之效果]The use of the release film of the present invention is not particularly limited, and is particularly suitable for the manufacture of flexible circuit substrates. Specifically, for example, in the manufacturing steps of flexible circuit boards such as printed wiring boards, flexible printed boards, multilayer printed wiring boards, etc., it can be preferably used as a copper clad laminate or The release film when the copper foil is pressed on the substrate. In addition, in the manufacturing process of the flexible printed circuit board, in order to prevent the cover film from being hot-pressed to the flexible printed circuit board body on which the copper circuit is formed by a thermosetting adhesive or a thermosetting adhesive sheet, The cover film is connected to the hot pressing plate and can be preferably used as a release film. Furthermore, in the semiconductor molding step of using a mold to seal a semiconductor wafer with a resin to obtain a molded product, it can be preferably used as a release film for covering the inner surface of the mold to prevent contamination of the mold due to the resin. [Effects of the invention]
根據本發明,可提供一種於使用於可撓性電路基板之製造步驟之情形時,不會使基板受到污染之離型膜。又,藉由使用此種離型膜,可實現防止鍍覆不良之產生、或洗淨步驟之縮減,可有助於節省資源或降低環境負荷。According to the present invention, it is possible to provide a release film that does not contaminate the substrate when it is used in the manufacturing step of a flexible circuit substrate. In addition, by using such a release film, it is possible to prevent the occurrence of plating defects or to reduce the cleaning steps, which can help save resources or reduce environmental load.
以下,列舉實施例對本發明之態樣進而詳細地進行說明,但本發明並不僅限定於該等實施例。Hereinafter, embodiments of the present invention will be further described in detail, but the present invention is not limited to these embodiments.
(實施例1) 相對於4-甲基-1-戊烯系聚合物100重量份,加入Irganox 1098(熔點160℃)0.1重量份作為高熔點酚系抗氧化劑,使用單軸擠出機(GM ENGINEERING公司製造,GM30-28(螺桿直徑30 mm,L/D28)),以T字模寬度400 mm進行擠出成形,獲得厚度30 μm之離型膜。再者,作為擠出時之條件,將料缸之全長分為5等分,自入口側依序分隔為C1、C2、C3、C4、C5之5個區域,將各區域之設定溫度設為C1:300℃、C2:300℃、C3~C5:290℃,將擠出量設為50 kg/小時,將線速設為70 m/分鐘。(Example 1) With respect to 100 parts by weight of 4-methyl-1-pentene polymer, 0.1 part by weight of Irganox 1098 (melting point 160°C) was added as a high melting point phenolic antioxidant, and a uniaxial extruder (manufactured by GM Engineering, GM30) was used. -28 (screw diameter 30 mm, L/D28)), extruded with a T-die width of 400 mm to obtain a release film with a thickness of 30 μm. Furthermore, as a condition during extrusion, the full length of the cylinder is divided into 5 equal parts, from the inlet side into 5 zones C1, C2, C3, C4, C5 in sequence, and the set temperature of each zone is set to C1: 300°C, C2: 300°C, C3 to C5: 290°C, the extrusion volume was set to 50 kg/hour, and the line speed was set to 70 m/min.
(實施例2) 加入Irganox 3114(熔點221℃)0.5重量份作為高熔點酚系抗氧化劑,除此之外,以與實施例1相同之方式,獲得厚度30 μm之離型膜。(Example 2) 0.5 parts by weight of Irganox 3114 (melting point: 221°C) was added as a high melting point phenolic antioxidant, and in the same manner as in Example 1, a release film with a thickness of 30 μm was obtained.
(實施例3) 加入Irganox 1330(熔點240℃)1.0重量份作為高熔點酚系抗氧化劑,除此之外,以與實施例1相同之方式,獲得厚度30 μm之離型膜。(Example 3) In addition to adding 1.0 part by weight of Irganox 1330 (melting point 240° C.) as a high melting point phenolic antioxidant, in the same manner as in Example 1, a release film with a thickness of 30 μm was obtained.
(實施例4) 相對於4-甲基-1-戊烯系聚合物100重量份,加入Irganox 1098(熔點160℃)0.6重量份作為高熔點酚系抗氧化劑,使用V型混合器等使其混合後,利用雙軸擠出機進行熔融混練及切斷加工,藉此製備0.2 g/50粒之經造粒之母料。將所獲得之母料使用同向旋轉型雙軸擠出機(Research Laboratory of Plastics Technology公司製造,SBTN-92(螺桿直徑92 mm,L/D30)),以T字模寬度400 mm進行擠出成形,獲得厚度30 μm之離型膜。再者,作為擠出時之條件,將料缸之全長分為5等分,自入口側依序分隔為C1、C2、C3、C4、C5之5個區域,將各區域之設定溫度設定為C1:300℃、C2:350℃、C3~C5:290℃,將擠出量設為25 kg/小時,將線速設為35 m/分鐘。(Example 4) With respect to 100 parts by weight of 4-methyl-1-pentene polymer, 0.6 parts by weight of Irganox 1098 (melting point 160°C) is added as a high melting point phenolic antioxidant. After mixing with a V-type mixer, use double The shaft extruder performs melt kneading and cutting processing to prepare a pelletized masterbatch of 0.2 g/50 pellets. The obtained masterbatch was extruded with a co-rotating twin-screw extruder (manufactured by Research Laboratory of Plastics Technology, SBTN-92 (screw diameter 92 mm, L/D30)) with a T-die width of 400 mm , A release film with a thickness of 30 μm is obtained. Furthermore, as a condition for extrusion, the full length of the cylinder is divided into 5 equal parts, which are divided into 5 areas C1, C2, C3, C4, and C5 in sequence from the inlet side, and the set temperature of each area is set to C1: 300°C, C2: 350°C, C3 to C5: 290°C, the extrusion volume was set to 25 kg/hour, and the line speed was set to 35 m/min.
(實施例5) 加入Irganox 3114(熔點221℃)0.3重量份作為高熔點酚系抗氧化劑,除此之外,以與實施例4相同之方式,獲得厚度30 μm之離型膜。(Example 5) In addition to adding 0.3 parts by weight of Irganox 3114 (melting point: 221°C) as a high melting point phenol antioxidant, in the same manner as in Example 4, a release film with a thickness of 30 μm was obtained.
(實施例6) 加入Irganox 1330(熔點240℃)0.7重量份作為高熔點酚系抗氧化劑,除此之外,以與實施例4相同之方式,獲得厚度30 μm之離型膜。(Example 6) In addition to adding 0.7 parts by weight of Irganox 1330 (melting point 240° C.) as a high melting point phenolic antioxidant, in the same manner as in Example 4, a release film with a thickness of 30 μm was obtained.
(比較例1) 不添加高熔點酚系抗氧化劑,除此之外,以與實施例1相同之方式,獲得厚度30 μm之離型膜。(Comparative example 1) Except that no high-melting phenol-based antioxidant was added, in the same manner as in Example 1, a release film with a thickness of 30 μm was obtained.
(比較例2~5) 加入表1所示之酚系抗氧化劑0.4~0.7重量份,代替高熔點酚系抗氧化劑,除此之外,以與實施例4相同之方式,獲得厚度30 μm之離型膜。所使用之酚系抗氧化劑如下。 ・Irganox 1076(熔點50℃,BASF公司製造) ・Irganox 259(熔點106℃,BASF公司製造) ・Irganox 1010(熔點115℃,BASF公司製造) ・Sumilizer GA80(熔點125℃,住友化學公司製造)(Comparative Examples 2 to 5) 0.4-0.7 parts by weight of the phenolic antioxidant shown in Table 1 was added instead of the high melting point phenolic antioxidant, except that the same method as in Example 4 was used to obtain a release film with a thickness of 30 μm. The phenolic antioxidants used are as follows. ・Irganox 1076 (melting point 50°C, manufactured by BASF) ・Irganox 259 (melting point 106°C, manufactured by BASF) ・Irganox 1010 (melting point 115°C, manufactured by BASF) ・Sumilizer GA80 (Melting point 125°C, manufactured by Sumitomo Chemical Co., Ltd.)
(評價1) 對於實施例1~6及比較例1~5中所獲得之離型膜,利用以下之方法進行評價。 將結果示於表1。(Evaluation 1) The release films obtained in Examples 1 to 6 and Comparative Examples 1 to 5 were evaluated by the following methods. The results are shown in Table 1.
(1)離型膜表面之氧濃度之測定 使用X射線光電子光譜機(ULVAC-PHI公司製造,Versa Probe II),於單色化Al Kα射線之X射線光源、檢測角45度、STEP寬度1 eV之條件下進行寬掃描測定。表面氧濃度使用下述計算式求出。 表面氧濃度(%)=(IO/SO)/(IC/SC)×100 (IO:氧之光電子強度、IC:碳之光電子強度、SC:碳之相對感度係數、SO:氧之相對感度係數) 再者,各元素之光電子強度係將利用寬掃描所測定之光電子強度分別於下述範圍內進行積分而獲得之值。 C1s :280-300 eV、O1s :520-540 eV 再者,氧濃度以SC=0.314、SO=0.733求出。(1) The oxygen concentration on the surface of the release film is measured using an X-ray photoelectron spectrometer (manufactured by ULVAC-PHI, Versa Probe II), with an X-ray source of monochromatic Al Kα rays, a detection angle of 45 degrees, and a STEP width of 1 Perform wide scan measurement under eV conditions. The surface oxygen concentration is calculated using the following calculation formula. Surface oxygen concentration (%)=(IO/SO)/(IC/SC)×100 (IO: photoelectron intensity of oxygen, IC: photoelectron intensity of carbon, SC: relative sensitivity coefficient of carbon, SO: relative sensitivity coefficient of oxygen ) Furthermore, the photoelectron intensity of each element is a value obtained by integrating the photoelectron intensity measured by the wide scan in the following ranges. C 1s : 280-300 eV, O 1s : 520-540 eV Furthermore, the oxygen concentration is calculated with SC=0.314 and SO=0.733.
(2)非污染性之評價 將所獲得之離型膜切割為A4,利用相同大小之銅箔夾住而獲得積層體。將所獲得之積層體於180℃、5 MPa、60分鐘之條件下進行熱壓。熱壓係以n=5進行。 其後,自積層體將合計10張銅箔剝離並回收,將各者之與離型膜接觸之側的面利用氯仿來洗淨,獲得萃取液。使所獲得之萃取液全部合併,將氯仿蒸餾去除後,對殘存量進行稱量,將其作為自離型膜轉移之污染成分量。算出每單位面積之污染成分量,根據以下基準進行評價。 ◎:污染成分量為50 mg/m2 以下 〇:污染成分量超過50 mg/m2 且100 mg/m2 以下 △:污染成分量超過100 mg/m2 且500 mg/m2 以下 ×:污染成分量超過500 mg/m2 (2) Evaluation of non-polluting properties Cut the obtained release film into A4, and clamp it with copper foils of the same size to obtain a laminate. The obtained laminate was hot-pressed under the conditions of 180°C, 5 MPa, and 60 minutes. The hot pressing is performed with n=5. After that, a total of 10 copper foils were peeled off from the laminate and collected, and the surface of each of them on the side in contact with the release film was washed with chloroform to obtain an extract. Combine all the obtained extracts and distill off the chloroform, then weigh the remaining amount and use it as the amount of contaminant components transferred from the release membrane. Calculate the amount of pollution components per unit area, and evaluate based on the following criteria. ◎: Contaminant components in an amount of 50 mg / m 2 or less ○: Contaminant components of more than 50 mg / m 2 and 100 mg / m 2 or less △: Contaminant components of more than 100 mg / m 2 and 500 mg / m 2 or less ×: The amount of pollutants exceeds 500 mg/m 2
[表1]
(實施例7) 相對於4-甲基-1-戊烯系聚合物100重量份,加入Adekastab CDA-1(分子量204)0.1重量份作為金屬減活劑,使用V型混合器等使其混合後,利用雙軸擠出機進行熔融混練及切斷加工,藉此製備0.2 g/50粒之經造粒之母料。將所獲得之母料使用同向旋轉型雙軸擠出機(Research Laboratory of Plastics Technology公司製造,SBTN-92(螺桿直徑92 mm,L/D30)),以T字模寬度400 mm進行擠出成形,獲得厚度30 μm之離型膜。再者,作為擠出時之條件,將料缸之全長分為5等分,自入口側依序分隔為C1、C2、C3、C4、C5之5個區域,將各區域之設定溫度設為C1:300℃、C2:350℃、C3~C5:290℃。又,將擠出量設為25 kg/小時,將線速設為35 m/分鐘。(Example 7) With respect to 100 parts by weight of 4-methyl-1-pentene-based polymer, 0.1 parts by weight of Adekastab CDA-1 (molecular weight 204) is added as a metal deactivator. The extruder performs melt kneading and cutting processing to prepare a pelletized masterbatch of 0.2 g/50 pellets. The obtained masterbatch was extruded with a co-rotating twin-screw extruder (manufactured by Research Laboratory of Plastics Technology, SBTN-92 (screw diameter 92 mm, L/D30)) with a T-die width of 400 mm , A release film with a thickness of 30 μm is obtained. Furthermore, as a condition during extrusion, the full length of the cylinder is divided into 5 equal parts, from the inlet side into 5 zones C1, C2, C3, C4, C5 in sequence, and the set temperature of each zone is set to C1: 300°C, C2: 350°C, C3 to C5: 290°C. In addition, the extrusion rate was set to 25 kg/hour, and the line speed was set to 35 m/minute.
(實施例8) 使用Adekastab CDA-10(分子量553)1.0重量份作為金屬減活劑,除此之外,以與實施例7相同之方式,獲得厚度30 μm之離型膜。(Example 8) Except for using 1.0 part by weight of Adekastab CDA-10 (molecular weight 553) as the metal deactivator, in the same manner as in Example 7, a release film with a thickness of 30 μm was obtained.
(實施例9) 使用Adekastab CDA-1(分子量204)0.7重量份作為金屬減活劑,除此之外,以與實施例7相同之方式,獲得厚度30 μm之離型膜。(Example 9) Except for using 0.7 parts by weight of Adekastab CDA-1 (molecular weight 204) as the metal deactivator, in the same manner as in Example 7, a release film with a thickness of 30 μm was obtained.
(實施例10) 使用Adekastab CDA-10(分子量553)0.3重量份作為金屬減活劑,除此之外,以與實施例7相同之方式,獲得厚度30 μm之離型膜。(Example 10) Except for using 0.3 parts by weight of Adekastab CDA-10 (molecular weight 553) as the metal deactivator, in the same manner as in Example 7, a release film with a thickness of 30 μm was obtained.
(實施例11) 使用Adekastab CDA-10(分子量553)0.5重量份作為金屬減活劑,除此之外,以與實施例7相同之方式,獲得厚度30 μm之離型膜。(Example 11) Except for using 0.5 parts by weight of Adekastab CDA-10 (molecular weight 553) as the metal deactivator, in the same manner as in Example 7, a release film with a thickness of 30 μm was obtained.
(比較例6) 將4-甲基-1-戊烯系聚合物100重量份,使用單軸擠出機(GM ENGINEERING公司製造,GM30-28(螺桿直徑30 mm,L/D28)),以T字模寬度400 mm進行擠出成形,獲得厚度30 μm之離型膜。擠出條件設為料缸溫度260~300℃、料筒溫度C1:300℃、C2:300℃、C3~C5:290℃、擠出量50 kg/小時、線速70 m/分鐘。(Comparative Example 6) Use 100 parts by weight of 4-methyl-1-pentene polymer using a single-screw extruder (manufactured by GM Engineering, GM30-28 (screw diameter 30 mm, L/D28)) with a T-shaped die width of 400 mm Perform extrusion molding to obtain a release film with a thickness of 30 μm. The extrusion conditions are set as cylinder temperature 260~300℃, cylinder temperature C1: 300℃, C2: 300℃, C3~C5: 290℃, extrusion volume 50 kg/hour, line speed 70 m/min.
(比較例7) 使用Adekastab CDA-1(分子量204)1.1重量份作為金屬減活劑,除此之外,以與比較例6相同之方式,獲得厚度30 μm之離型膜。(Comparative Example 7) Except for using 1.1 parts by weight of Adekastab CDA-1 (molecular weight 204) as the metal deactivator, in the same manner as in Comparative Example 6, a release film with a thickness of 30 μm was obtained.
(比較例8) 使用Adekastab CDA-1(分子量204)1.5重量份作為金屬減活劑,除此之外,以與比較例6相同之方式,獲得厚度30 μm之離型膜。(Comparative Example 8) Except for using 1.5 parts by weight of Adekastab CDA-1 (molecular weight 204) as the metal deactivator, in the same manner as in Comparative Example 6, a release film with a thickness of 30 μm was obtained.
(比較例9) 使用Adekastab CDA-10(分子量553)0.5重量份作為金屬減活劑,將擠出條件設為料缸溫度260~300℃、料筒溫度C1:300℃、C2:300℃、C3~C5:290℃、擠出量50 kg/小時、線速70 m/分鐘,除此之外,以與實施例8、10相同之方式,獲得厚度30 μm之離型膜。(Comparative Example 9) Adekastab CDA-10 (molecular weight 553) 0.5 parts by weight was used as the metal deactivator, and the extrusion conditions were set as cylinder temperature 260~300℃, cylinder temperature C1: 300℃, C2: 300℃, C3~C5: 290 Except for the temperature, the extrusion volume of 50 kg/hour, and the line speed of 70 m/min, in the same manner as in Examples 8 and 10, a release film with a thickness of 30 μm was obtained.
(比較例10) 使用Adekastab CDA-10(分子量553)0.5重量份作為金屬減活劑,利用單軸擠出機(GM ENGINEERING公司製造,GM30-28(螺桿直徑30 mm,L/D28))進行製膜,除此之外,以與實施例8、10相同之方式,獲得厚度30 μm之離型膜。(Comparative Example 10) Adekastab CDA-10 (molecular weight 553) 0.5 parts by weight was used as a metal deactivator, and a single-screw extruder (manufactured by GM Engineering, GM30-28 (screw diameter 30 mm, L/D28)) was used for film formation. Otherwise, in the same manner as in Examples 8 and 10, a release film with a thickness of 30 μm was obtained.
(比較例11) 使用Adekastab CDA-10(分子量553)0.5重量份作為金屬減活劑,使用僅利用V型混合器等進行混合而成之原料,除此之外,以與實施例8、10相同之方式,獲得厚度30 μm之離型膜。(Comparative Example 11) 0.5 parts by weight of Adekastab CDA-10 (molecular weight 553) was used as the metal deactivator, and raw materials mixed only with a V-type mixer etc. were used, except that it was obtained in the same manner as in Examples 8 and 10 Release film with a thickness of 30 μm.
(評價2) 對於實施例7~11及比較例6~11中所獲得之離型膜,利用以下方法進行評價。 將結果示於表2。(Evaluation 2) The release films obtained in Examples 7 to 11 and Comparative Examples 6 to 11 were evaluated by the following methods. The results are shown in Table 2.
(1)離型膜表面之氮濃度之測定 使用X射線光電子光譜機(ULVAC-PHI公司製造,Versa Probe II),於單色化Al Kα射線之X射線光源、檢測角45度、STEP寬度1 eV之條件下進行寬掃描測定。表面氮濃度使用下述計算式求出。 表面氮濃度(%)=(IN/SN)/(IC/SC)×100 (IN:氮之光電子強度、IC:碳之光電子強度、SC:碳之相對感度係數、SN:氮之相對感度係數) 再者,各元素之光電子強度係將利用寬掃描所測定之光電子強度分別於下述範圍內進行積分而獲得之值。 C1s :280-300 eV、N1s :390-410 eV 再者,氮濃度以SC=0.314、SN=0.499求出。(1) The nitrogen concentration on the surface of the release film is measured using an X-ray photoelectron spectrometer (manufactured by ULVAC-PHI, Versa Probe II), with an X-ray source of monochromatic Al Kα rays, a detection angle of 45 degrees, and a STEP width of 1 Perform wide scan measurement under eV conditions. The surface nitrogen concentration is calculated using the following calculation formula. Surface nitrogen concentration (%)=(IN/SN)/(IC/SC)×100 (IN: photoelectron intensity of nitrogen, IC: photoelectron intensity of carbon, SC: relative sensitivity coefficient of carbon, SN: relative sensitivity coefficient of nitrogen ) Furthermore, the photoelectron intensity of each element is a value obtained by integrating the photoelectron intensity measured by the wide scan in the following ranges. C 1s : 280-300 eV, N 1s : 390-410 eV Furthermore, the nitrogen concentration is calculated with SC=0.314 and SN=0.499.
(2)非污染性之評價 將所獲得之離型膜切割為A4,利用相同大小之銅箔夾住而獲得積層體。將所獲得之積層體於180℃、5 MPa、60分鐘之條件下進行熱壓。熱壓係以n=5進行。 其後,自積層體將合計10張銅箔剝離並回收,將各者之與離型膜接觸之側的面利用氯仿來洗淨,獲得萃取液。使所獲得之萃取液全部合併,將氯仿蒸餾去除後,對殘存量進行稱量,將其作為自離型膜轉移之污染成分量。算出每單位面積之污染成分量,根據以下基準進行評價。 ◎:污染成分量為50 mg/m2 以下 〇:污染成分量超過50 mg/m2 且100 mg/m2 以下 △:污染成分量超過100 mg/m2 且500 mg/m2 以下 ×:污染成分量超過500 mg/m2 (2) Evaluation of non-polluting properties Cut the obtained release film into A4, and clamp it with copper foils of the same size to obtain a laminate. The obtained laminate was hot-pressed under the conditions of 180°C, 5 MPa, and 60 minutes. The hot pressing is performed with n=5. After that, a total of 10 copper foils were peeled off from the laminate and collected, and the surface of each of them on the side in contact with the release film was washed with chloroform to obtain an extract. Combine all the obtained extracts and distill off the chloroform, then weigh the remaining amount and use it as the amount of contaminant components transferred from the release membrane. Calculate the amount of pollution components per unit area, and evaluate based on the following criteria. ◎: Contaminant components in an amount of 50 mg / m 2 or less ○: Contaminant components of more than 50 mg / m 2 and 100 mg / m 2 or less △: Contaminant components of more than 100 mg / m 2 and 500 mg / m 2 or less ×: The amount of pollutants exceeds 500 mg/m 2
[表2]
根據本發明,可提供一種於使用於可撓性電路基板之製造步驟之情形時,不會使基板受到污染之離型膜。According to the present invention, it is possible to provide a release film that does not contaminate the substrate when it is used in the manufacturing step of a flexible circuit substrate.
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| JP4965216B2 (en) * | 2006-10-10 | 2012-07-04 | 三井化学株式会社 | 4-methyl-1-pentene polymer release film |
| JP2015168715A (en) * | 2014-03-05 | 2015-09-28 | 三井化学株式会社 | Composition of 4-methyl-1-pentene resin |
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