TWI746821B - Laser processing method of frame unit and processed object - Google Patents
Laser processing method of frame unit and processed object Download PDFInfo
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Abstract
[課題] 提供一種框架單元,代替黏著帶而使用從而將被加工物的加工所需的費用抑制為低。 [解決手段] 一種框架單元,為在保持被加工物之際使用者,包含:環狀的框,具備收容被加工物的開口;電極片,覆蓋框的開口的一部分,具備包含正負的電極的電極層;和供電單元,配裝對電極供電的電池,控制從電池往電極的供電;以靜電的力將被加工物吸附而保持。[Problem] provides a frame unit that can be used instead of the adhesive tape to reduce the cost required for processing the workpiece. [Solution] A frame unit for the user to hold the object to be processed, including: a ring-shaped frame having an opening for accommodating the object to be processed; The electrode layer; and the power supply unit, equipped with a battery that supplies power to the electrode, and controls the power supply from the battery to the electrode; the object to be processed is absorbed and maintained by electrostatic force.
Description
本發明涉及為了保持被加工物而使用的框架單元及使用此框架單元的被加工物之雷射加工方法。The present invention relates to a frame unit used to hold a processed object and a laser processing method of the processed object using the frame unit.
在將半導體晶圓、光裝置晶圓、封裝基板等分割為複數個晶片之際,首先以夾台等保持此等被加工物。之後,沿著設定於被加工物的分割預定線(切割道)照射雷射束,或將予以旋轉的環狀的切削刀具予以切入,從而可將被加工物分割為複數個晶片(例如參照專利文獻1)。When dividing a semiconductor wafer, an optical device wafer, a package substrate, and the like into a plurality of wafers, the workpiece is first held by a clamping table or the like. After that, the laser beam is irradiated along the planned dividing line (cutting path) set in the workpiece, or a rotating ring-shaped cutting tool is cut in, so that the workpiece can be divided into a plurality of wafers (for example, refer to the patent Literature 1).
在如此的方法中在分割被加工物前,將徑比被加工物大的黏著帶(切割帶)之中央部分貼附於被加工物,此外於此黏著帶的外周部分固定包圍被加工物的環狀的框。藉此,可防止被加工物直接對夾台接觸而損傷。再者,防止將被加工物分割而得的晶片的分散,使得可易於進行搬送(例如參照專利文獻2)。 [先前技術文獻] [專利文獻]In such a method, before dividing the workpiece, the central part of the adhesive tape (cutting tape) with a larger diameter than the workpiece is attached to the workpiece, and the outer peripheral part of the adhesive tape is fixed to surround the workpiece. Ring-shaped frame. Thereby, it is possible to prevent the workpiece from directly contacting the clamping table and being damaged. Furthermore, the dispersion of the wafers obtained by dividing the workpiece into pieces is prevented, so that it can be easily transported (for example, refer to Patent Document 2). [Prior Art Document] [Patent Document]
[專利文獻1]日本特開2012-84720號公報 [專利文獻2]日本特開平9-27543號公報[Patent Document 1] Japanese Patent Application Publication No. 2012-84720 [Patent Document 2] Japanese Patent Application Publication No. 9-27543
[發明所欲解決之問題][The problem to be solved by the invention]
然而,在上述的方法中,無法再利用使用後的黏著帶,故被加工物的加工所需的費用容易變高。尤其,黏著材難殘留於被加工物的高性能的黏著帶價格亦高,故使用如此的黏著帶時,被加工物的加工所需的費用亦變高。However, in the above-mentioned method, the adhesive tape after use cannot be reused, so the cost required for processing of the workpiece tends to increase. In particular, high-performance adhesive tapes that hardly leave the adhesive material on the workpiece are also expensive. Therefore, when such adhesive tapes are used, the cost for processing the workpiece also increases.
本發明係鑑於該問題點而創作者,其目的在於提供框架單元及使用此框架單元的被加工物之雷射加工方法,該框架單元係代替黏著帶而使用從而將被加工物的加工所需的費用抑制為低者。 [解決問題之技術手段]The present invention was created in view of this problem, and its purpose is to provide a frame unit and a laser processing method for a processed object using the frame unit. The frame unit is used instead of an adhesive tape to meet the processing requirements of the processed object. The cost is suppressed to the lower one. [Technical means to solve the problem]
依本發明的一態樣時,提供一種框架單元,為在保持被加工物之際使用者,具有:環狀的框,具備收容該被加工物的開口;電極片,覆蓋該框的該開口的一部分,具備包含正負的電極的電極層;和供電單元,配裝對該電極供電的電池,控制從該電池往該電極的供電;以靜電的力將該被加工物吸附而保持。According to an aspect of the present invention, there is provided a frame unit for the user to hold the object to be processed. The frame unit is provided with: a ring-shaped frame having an opening for accommodating the object to be processed; and an electrode sheet covering the opening of the frame A part of it is provided with an electrode layer including positive and negative electrodes; and a power supply unit equipped with a battery that supplies power to the electrode to control the power supply from the battery to the electrode; the workpiece is attracted and held by electrostatic force.
於本發明的一態樣,該電極層可具備將正負的電極整列為彼此不同而成的一對的梳狀電極。此外,該電極片可設於外周部固定於該框的樹脂片。再者,該電極片可構成為使對該被加工物具有透射性的波長的雷射束透射,在經由該電極片對該被加工物照射該雷射束之際使用此框架單元。In one aspect of the present invention, the electrode layer may include a pair of comb-shaped electrodes formed by aligning positive and negative electrodes into a pair of mutually different electrodes. In addition, the electrode sheet may be provided on a resin sheet fixed to the frame at the outer peripheral portion. Furthermore, the electrode sheet may be configured to transmit a laser beam of a wavelength that is transmissive to the workpiece, and the frame unit may be used when the laser beam is irradiated to the workpiece through the electrode sheet.
依本發明的其他的一態樣時,提供一種被加工物之雷射加工方法,為使用上述的框架單元的被加工物之加工方法,具備:吸附步驟,使該被加工物載於該框架單元的該電極片,對該電極供電而將該被加工物以靜電的力進行吸附;框架單元支撐步驟,以具有第1面、與該第1面相反之側的第2面並使對該被加工物具有透射性的波長的該雷射束透射的板狀的支撐台的該第1面側,支撐吸附該被加工物之下的該框架單元的該電極片側;雷射加工步驟,從該支撐台的該第2面側,經由該支撐台及該電極片對該被加工物照射該雷射束,將該被加工物的內部改質而形成改質層;框架單元卸除步驟,在實施該雷射加工步驟後,從該支撐台卸除該框架單元;和剝離步驟,在該框架單元卸除步驟後,調整往該電極的供電,將該被加工物從該框架單元的該電極片剝離。 [對照先前技術之功效]According to another aspect of the present invention, a laser processing method of a processed object is provided. The processing method of the processed object using the above-mentioned frame unit includes: an adsorption step to place the processed object on the frame The electrode sheet of the unit supplies power to the electrode to attract the workpiece with electrostatic force; the frame unit supports the step to have the first surface and the second surface opposite to the first surface and make the The first surface side of the plate-shaped support table through which the laser beam with the transmissive wavelength of the processed object is transmitted supports the electrode sheet side of the frame unit under the processed object; the laser processing step starts from On the second surface side of the support table, the laser beam is irradiated to the workpiece through the support table and the electrode sheet, and the interior of the workpiece is modified to form a modified layer; the frame unit removal step, After the laser processing step is performed, the frame unit is removed from the support table; and the peeling step, after the frame unit removal step, the power supply to the electrode is adjusted, and the processed object is removed from the frame unit. The electrode sheet is peeled off. [Compared with the effect of the previous technology]
本發明的一態樣相關的框架單元具有環狀的框、具備包含正負的電極的電極層的電極片、配裝對電極供電的電池並控制從電池往電極的供電的供電單元,以靜電的力將被加工物吸附而保持,故不同於使用黏著材的黏著帶,可反覆使用。因此,代替黏著帶而使用此框架單元,使得將被加工物的加工所需的費用抑制為低。A related frame unit of one aspect of the present invention has a ring-shaped frame, an electrode sheet having an electrode layer including positive and negative electrodes, a power supply unit that is equipped with a battery that supplies power to the electrode and controls the power supply from the battery to the electrode. The force to be processed is absorbed and maintained, so it is different from the adhesive tape that uses the adhesive material, and it can be used repeatedly. Therefore, using this frame unit instead of the adhesive tape makes it possible to suppress the cost required for the processing of the workpiece to be low.
參照附圖而說明有關本發明的一態樣相關的實施方式。圖1係示意性就本實施方式相關的框架單元2的構成例進行繪示的透視圖,圖2係示意性就框架單元2的構成例進行繪示的剖面圖。Embodiments related to one aspect of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view schematically showing a configuration example of the
如示於圖1及圖2,框架單元2具備以鋁等的材料而成的環狀的框4。於框4之中央部分形成將此框4從第1面4a貫穿至第2面4b的開口4c。開口4c的形狀係例如從第1面4a側(或第2面4b側)所見時大致上圓形。另外,框4的材質、形狀、大小等方面無特別的限制。As shown in FIGS. 1 and 2, the
於框4的第2面4b,以聚乙烯(PE)、聚對苯二甲酸乙二酯(PET)等的材料而成的膜狀的底片(樹脂片)6被以覆蓋開口4c的方式固定。具體而言,圓形的底片6的第1面6a側的外周部分黏貼於框4的第2面4b。On the
底片6具有可保護被加工物11(圖5等參照)的程度的柔軟性、不阻礙後述的靜電的力的程度的絕緣性。然而,底片6的材質、形狀、厚度、大小等方面無特別的限制。被加工物11被以此底片6的第1面6a側進行保持。另一方面,於底片6的第2面6b側之中央部分,設置電極片8。The
圖3係示意性就電極片8的構成例進行繪示的平面圖,圖4係示意性就電極片8的構成例進行繪示的剖面圖,電極片8例如包含以與底片6同樣的材料而形成為大致上圓形的支撐片10。支撐片10的直徑比開口4c的直徑小,比被加工物11的直徑大。然而,支撐片10的材質、形狀、厚度、大小等方面無特別的限制。FIG. 3 is a plan view schematically showing a configuration example of the
於支撐片10的其中一面(例如,底片6側的面),配置電極層12。此電極層12例如透過以下方式獲得:將以導電性的材料而形成於支撐片10的其中一面的導電材層,分離為正的電極圖案(電極)12a與負的電極圖案(電極)12b。形成導電材層的導電性的材料方面,可舉例如氧化銦錫(Indium Tin Oxide: ITO)等的可視域下透明的材料。An
此情況下,例如利用沿著任意的分離預定線而照射雷射束、予以剝蝕的方法,將導電材層分離為正的電極圖案12a與負的電極圖案12b即可。亦即,將易於被導電材層吸收的波長的雷射束沿著分離預定線進行照射,形成此導電材層被除去的絕緣區域12c。In this case, for example, the conductive material layer may be separated into the
藉此,獲得被絕緣區域12c分離的正的電極圖案12a與負的電極圖案12b。在此方法下,沿著導電材層的分離預定線而照射雷射束即可,故比起使用遮罩之下的蝕刻等的方法可易於縮短加工所需的時間。Thereby, the
當然,亦可利用蝕刻等的方法將導電材層分離為正的電極圖案12a與負的電極圖案12b。此外,亦可利用絲網印刷、噴墨等的方法而形成分離為正的電極圖案12a與負的電極圖案12b的狀態下的電極層12。Of course, the conductive material layer may be separated into the
正的電極圖案12a及負的電極圖案12b的形狀係例如使正的電極與負的電極整列為彼此不同的一對的梳狀即可。在如此的梳狀的電極(梳狀電極)方面,以高的密度配置正的電極與負的電極,故例如作用在電極與被加工物11之間的稱為梯度力等的靜電之力亦變強。亦即,變得能以強的力保持被加工物11。The shape of the
然而,正的電極圖案12a及負的電極圖案12b的形狀等方面無特別的限制。例如,亦可將正的電極圖案12a及負的電極圖案12b以圓等而構成。另外,在以利用雷射束之下的剝蝕而形成如示於圖3的絕緣區域12c之際,只要以一筆畫的要領照射雷射束,即可進一步縮短加工所需的時間。However, the shapes of the
如此般構成的電極片8例如透過具有接著力的遮蓋片14從而配置為電極層12側密接於底片6的第2面6b側。藉此,比起使支撐片10側密接於第2面6b側的情況,可效率佳地使從電極層12產生的電場作用於第1面6a側的被加工物11。The
遮蓋片14例如包含以與底片6同樣的材料而形成的圓形的基材片、設於基材片的其中一面的糊層(接著材層)。此處,遮蓋片14(基材片)的直徑比電極片8(支撐片10)的直徑大。然而,遮蓋片14的材質、形狀、厚度、大小、構造等方面無特別的限制。The
另外,在本實施方式雖利用氧化銦錫等的在可視域為透明的材料而形成電極層12,惟電極層12的材質係依框架單元2的用途等而變更。例如,經由電極層12對被加工物11照射雷射束時,需要以使此雷射束透射的材料而形成電極層12。此情況下,底片6、支撐片10、遮蓋片14方面亦採用使雷射束透射的材料。In addition, although the
另一方面,不經由電極層12對被加工物11照射雷射束的情況、使環狀的切削刀具切入於被加工物11的情況等之下,可未必要利用透明的材料而形成電極層12。此情況下,底片6、支撐片10、遮蓋片14方面亦無須採用透明的材料。On the other hand, when the
於底片6的第2面6b側係配置連接於正的電極圖案12a的第1佈線16a、連接於負的電極圖案12b的第2佈線16b。如示於圖1,於框4的第1面4a側係設置供電單元18。第1佈線16a及第2佈線16b係例如作成為繞著框4而連接於供電單元18。A
供電單元18具備用於就使用於往上述的正的電極圖案12a及負的電極圖案12b的供電的電池20進行收容的電池保持器18a。此外,在鄰接於電池保持器18a的位置,設置供於就往正的電極圖案12a及負的電極圖案12b的供電與非供電進行切換用的開關18b。The
例如,使開關18b為導通狀態(導通狀態)時,收容於電池保持器18a的電池20的電力經由第1佈線16a及第2佈線16b往正的電極圖案12a及負的電極圖案12b供應。另一方面,使開關18b為非導通狀態(關斷狀態)時,往正的電極圖案12a及負的電極圖案12b的供電停止。For example, when the
另外,在本實施方式雖將供電單元18配置於框4的第1面4a側,惟供電單元18的配置等方面無特別的限制。至少此供電單元18配置於在使用(例如支撐)框架單元2之際不會成為妨礙的位置即可。例如,亦可將供電單元18配置於框4的開口4c內。此外,電池20可為如鈕扣型電池(幣型電池)的一次電池,亦可為可透過充電而反覆使用的2次電池。In addition, although the
接著,說明有關利用如上述的框架單元2之下的被加工物之雷射加工方法。在本實施方式相關的被加工物之雷射加工方法係首先,進行將被加工物11以框架單元2進行吸附的吸附步驟。圖5係用於說明有關吸附步驟的透視圖。Next, a description will be given of a laser processing method using the workpiece under the
在本實施方式所加工的被加工物11係例如以矽(Si)等的材料而成的圓盤狀的晶圓。此被加工物11的表面11a側係以設定為格子狀的分割預定線(切割道)13而區劃為複數個區域,於各區域形成IC(Integrated Circuit)、MEMS(Micro Electro Mechanical Systems)等的裝置15。The
另外,在本實施方式雖將以矽等的材料而成的圓盤狀的晶圓當作被加工物11,惟被加工物11的材質、形狀、構造、大小等方面無限制。亦可使用以其他半導體、陶瓷、樹脂、金屬等的材料而成的被加工物11。同樣地,裝置15的種類、數量、形狀、構造、大小、配置等方面亦無限制。In addition, although a disk-shaped wafer made of a material such as silicon is used as the
在吸附步驟係首先,以被加工物11的背面11b側與底片6的第1面6a側接觸的方式,使被加工物11載置於底片6。更具體而言,將被加工物11載置於底片6的與電極片8對應的區域(中央部分)。接著,使供電單元18的開關18b為導通狀態,將電池20的電力供應至正的電極圖案12a與負的電極圖案12b。In the adsorption step, first, the
藉此,在正的電極圖案12a及負的電極圖案12b的周圍產生電場,其效果方面,靜電的力作用於被加工物11與電極層12之間。由於此靜電的力,被加工物11被框架單元2吸附、保持。另外,作用於被加工物11與電極層12之間的靜電的力方面,包括庫侖力、JR力、梯度(gradient)力等。As a result, an electric field is generated around the
在吸附步驟後,進行就吸附被加工物11的狀態下的框架單元2進行支撐的框架單元支撐步驟。圖6係示意性就在框架單元支撐步驟等使用的雷射加工裝置102的構成例進行繪示的透視圖,圖7係用於說明有關框架單元支撐步驟等的剖面圖。另外,在圖6及圖7,利用功能塊等示出雷射加工裝置102的一部分的構成要素。After the adsorption step, a frame unit support step for supporting the
如示於圖6,雷射加工裝置102具備支撐各構成要素的基台104。於基台104的後端部,設置延伸於Z軸方向(鉛直方向)的支撐構造106。在基台4的遠離支撐構造106的前方的角部,設置朝上方突出的突出部104a。As shown in FIG. 6, the
於突出部104a的內部形成空間,於此空間設置透過升降機構(未圖示)而升降的載盒升降機108。於載盒升降機108之上表面,載置用於收容複數個被加工物11的載盒110。另外,被加工物11,在上述的吸附步驟後,被框架單元2吸附、保持的狀態下被收容於載盒110。A space is formed inside the
在鄰接於突出部104a的位置,配置供於就保持被加工物11的框架單元2的粗略的位置進行調整用的位置調整單元112。位置調整單元112例如包含一面維持平行於Y軸方向(分度進給方向)的狀態一面被接近、隔離的一對的導軌。各導軌具有將框23支撐的支撐面、與支撐面垂直的側面。At a position adjacent to the
例如,使從載盒110搬出的框架單元2乘於位置調整單元112的導軌,透過此導軌將框架單元2夾住於X軸方向(加工進給方向),使得可將框架單元2定位於既定的位置。在位置調整單元112的附近,配置用於搬送框架單元2(被加工物11)的搬送單元114。搬送單元114具備將框架單元2中的框4進行吸附的吸附墊116。For example, the
在基台4之中央設置移動機構(加工進給機構、分度進給機構)118。移動機構118具備被配置於基台4之上表面並平行於Y軸方向的一對的Y軸導軌120。於Y軸導軌120,可滑動地安裝Y軸移動台122。A moving mechanism (processing feeding mechanism, indexing feeding mechanism) 118 is provided in the center of the
於Y軸移動台122的背面側(下表面側),設置螺帽部(未圖示),平行於Y軸導軌120的Y軸滾珠螺桿124被螺合於此螺帽部。於Y軸滾珠螺桿124的一端部,連結Y軸脈衝馬達126。以Y軸脈衝馬達126使Y軸滾珠螺桿124旋轉時,Y軸移動台122沿著Y軸導軌120而移動於Y軸方向。A nut portion (not shown) is provided on the back side (lower surface side) of the Y-axis moving table 122, and a Y-
於Y軸移動台122的表面(上表面),設置平行於X軸方向的一對的X軸導軌128。於X軸導軌128,可滑動地安裝X軸移動台130。On the surface (upper surface) of the Y-axis moving table 122, a pair of
於X軸移動台130的背面側(下表面側),設置螺帽部(未圖示),平行於X軸導軌128的X軸滾珠螺桿132被螺合於此螺帽部。於X軸滾珠螺桿132的一端部,連結X軸脈衝馬達134。以X軸脈衝馬達134使X軸滾珠螺桿132旋轉時,X軸移動台130沿著X軸導軌128移動於X軸方向。On the back side (lower surface side) of the X-axis moving table 130, a nut portion (not shown) is provided, and an
於X軸移動台130的表面側(上表面側),設置台底136。於台底136之上部,配置供於支撐框架單元2用的支台單元138。此支台單元138經由台底136連結於馬達等的旋轉驅動源(未圖示),繞大致上平行於Z軸方向(鉛直方向)的旋轉軸而旋轉。A bottom 136 is provided on the surface side (upper surface side) of the X-axis moving table 130. On the upper part of the
此外,支台單元138及台底136係透過上述的移動機構118而移動於X軸方向及Y軸方向(加工進給、分度進給)。關於支台單元138的細節後述。In addition, the
於支撐構造106,設置朝前方(支台單元138側)突出的支撐臂件106a,於此支撐臂件106a的頂端部,配置供於朝下方照射雷射束用的雷射照射單元140。此外,在鄰接於雷射照射單元140的位置,設置供於就被加工物11等進行攝像用的攝像單元(相機)142。The
雷射照射單元140具備使對被加工物11具有透射性的波長的雷射束進行脈衝振盪的雷射振盪器(未圖示)。例如,被加工物11以矽等的半導體材料而成的晶圓的情況下,可使用利用Nd:YAG等的雷射介質使波長為1000nm以上(例如,1064nm)的雷射束進行脈衝振盪的雷射振盪器等。The
此外,雷射照射單元140具備將從雷射振盪器所脈衝振盪的雷射束進行聚光的聚光器,將此雷射束照射、聚光於經由框架單元2被支台單元138支撐的被加工物11的內部。例如,一面以雷射照射單元140照射雷射束,一面使支台單元138移動於X軸方向,從而可將被加工物11的內部沿著X軸方向進行改質。In addition, the
在將被加工物11加工後例如再次透過搬送單元114將框架單元2收容於載盒110。載盒升降機108、位置調整單元112、搬送單元114、移動機構118、支台單元138、雷射照射單元140、攝像單元142等的構成要素係分別連接於控制單元144。After the
此控制單元144配合被加工物11的加工所需的一連串的程序,控制上述的各構成要素。此外,於控制單元144,連接作為使用者介面的觸控面板式的監視器146。This
如示於圖7,支台單元138例如形成為具有底壁138a、設於底壁138a的外周部分的側壁138b、連接於側壁138b之上端的上頂壁138c的箱狀。於側壁138b的一部分形成開口,吸附被加工物11的狀態下的框架單元2通過此開口而往支台單元138的內部搬入。As shown in FIG. 7, the
於上頂壁138c之中央部分,形成將上頂壁138c貫穿於上下的圓形的開口。於此開口,嵌入以使從雷射照射單元140放射的雷射束透射的材料而形成的板狀的支撐構材(支撐台)138d。In the central part of the upper
亦即,支撐構材138d使對於被加工物11具有透射性的波長的雷射束透射。另外,在圖7係說明的方便上,省略支撐構材138d的影線。此支撐構材138d(開口)的直徑比被加工物11的直徑大。為此,可透過支撐構材138d支撐被加工物11的整面。In other words, the
於上頂壁138c的下表面側,設置用於固定框架單元2的框4的夾具138e。此外,於接近於此夾具138e的上頂壁138c的下表面,具有吸引路徑138f的一端側的開口。吸引路徑138f的另一端側經由閥148等連接於吸引源150。On the lower surface side of the
在框架單元支撐步驟係首先,將吸附被加工物11的狀態下的框架單元2從載盒110搬出,搬入於支台單元138內。具體而言,以夾具138e將框4固定為,底片6的第2面6b側(電極片8側、遮蓋片14側)密接於支撐構材138d的下表面(第1面)。In the frame unit supporting step, first, the
並且,此狀態下打開閥148,使吸引源150的負壓作用。藉此,能以支撐構材138d的下表面側支撐框架單元2。如此,被加工物11在表面11a側曝露於下方的狀態下經由框架單元2保持於支台單元138。In this state, the
在框架單元支撐步驟後,進行從支撐構材138d之上表面(第2面)側照射雷射束而將被加工物11加工的雷射加工步驟。雷射加工步驟係接著使用雷射加工裝置102而進行。具體而言,首先,使支台單元138旋轉,使成為加工的對象的分割預定線13的伸長的方向對準於雷射加工裝置12的X軸方向。After the frame unit support step, a laser processing step of processing the
接著,使支台單元138移動,例如使雷射照射單元140的位置對準於成為對象的分割預定線13的延長線上。並且,如示於圖7,一面從雷射照射單元140朝被加工物11照射雷射束152,一面使支台單元138移動於X軸方向。Next, the
此處,雷射束152的照射條件(加工條件)在可將被加工物11的內部透過多光子吸收而改質的範圍進行調整。具體而言,例如使雷射束152聚光於被加工物11的內部。其他條件例如如下。 雷射束的波長:1000nm以上 雷射束的輸出:1W 雷射束的反覆頻率:80kHz 支台單元138的移動速度:800nm/sHere, the irradiation conditions (processing conditions) of the
如上述般,支台單元138的支撐構材138d以使雷射束152透射的材料而形成。此外,框架單元2的底片6、支撐片10、電極層12、及遮蓋片14亦以使雷射束152透射的材料而形成。As described above, the
因此,經由支撐構材138d及框架單元2將雷射束152照射於被加工物11的內部,可沿著分割預定線13形成改質層17。反覆如此的動作,例如沿著全部的分割預定線13形成改質層17時,雷射加工步驟結束。Therefore, the
在雷射加工步驟後,進行從支台單元138(支撐構材138d)卸除框架單元2的框架單元卸除步驟。具體而言,首先關閉閥148,遮斷吸引源150的負壓。並且,以搬送單元114等將框架單元2從支台單元138搬出。搬出的框架單元2再次收容於載盒110。After the laser processing step, the frame unit removal step of removing the
在框架單元卸除步驟後,進行將被加工物11從框架單元2的底片6(電極片8)剝離的剝離步驟。圖8(A)及圖8(B)係用於說明有關剝離步驟的透視圖。在此剝離步驟係例如將保持加工後的被加工物11的框架單元2從載盒110取出,如示於圖8(A),將黏著帶21的表面21a側黏貼於被加工物11的表面11a。After the frame unit removal step, a peeling step of peeling the workpiece 11 from the bottom sheet 6 (electrode sheet 8) of the
接著,使供電單元18的開關18b為非導通狀態,使往正的電極圖案12a及負的電極圖案12b的供電停止。藉此,作用於被加工物11與電極層12之間的靜電的力變弱或喪失。此狀態下,例如使框架單元2上下反轉為黏著帶21的背面21b側朝下方,使得如示於圖8(B),可將被加工物11從底片6(電極片8)剝離。Next, the
如以上,本實施方式相關的框架單元2具有環狀的框4、具備包含正的電極圖案(電極)12a與負的電極圖案(電極)12b的電極層12的電極片8、配裝對正的電極圖案12a及負的電極圖案12b供電的電池20並控制從電池20往正的電極圖案12a及負的電極圖案12b的供電的供電單元18,以靜電的力將被加工物11吸附而保持,故不同於使用黏著材的黏著帶,可反覆使用。因此,代替黏著帶而使用此框架單元,使得將被加工物11的加工所需的費用抑制為低。As described above, the
另外,本發明不限制於上述實施方式等的記載而可進行各種變更而實施。例如,在上述實施方式雖說明有關將改質層17形成於被加工物11的內部的情況,惟不經由電極層12對被加工物11照射雷射束的情況、使環狀的切削刀具切入於被加工物11的情況等之下,亦可使用本實施方式的框架單元2。In addition, the present invention is not limited to the description of the above-mentioned embodiment and the like, and can be implemented with various modifications. For example, although the above embodiment described the case where the modified
除此之外,上述實施方式相關的構造、方法等只要不脫離本發明的目的之範圍即可酌情變更而實施。In addition, the structures, methods, and the like related to the above-mentioned embodiments can be modified and implemented as appropriate as long as they do not depart from the scope of the object of the present invention.
2‧‧‧框架單元4‧‧‧框4a‧‧‧第1面4b‧‧‧第2面4c‧‧‧開口6‧‧‧底片(樹脂片)6a‧‧‧第1面6b‧‧‧第2面8‧‧‧電極片10‧‧‧支撐片12‧‧‧電極層12a‧‧‧正的電極圖案(電極)12b‧‧‧負的電極圖案(電極)12c‧‧‧絕緣區域14‧‧‧遮蓋片16a‧‧‧第1佈線16b‧‧‧第2佈線18‧‧‧供電單元18a‧‧‧電池保持器18b‧‧‧開關20‧‧‧電池102‧‧‧雷射加工裝置104‧‧‧基台104a‧‧‧突出部106‧‧‧支撐構造106a‧‧‧支撐臂件108‧‧‧載盒升降機110‧‧‧載盒112‧‧‧位置調整單元114‧‧‧搬送單元116‧‧‧吸附墊118‧‧‧移動機構(加工進給機構、分度進給機構)120‧‧‧Y軸導軌122‧‧‧Y軸移動台124‧‧‧Y軸滾珠螺桿126‧‧‧Y軸脈衝馬達128‧‧‧X軸導軌130‧‧‧X軸移動台132‧‧‧X軸滾珠螺桿134‧‧‧X軸脈衝馬達136‧‧‧台底138‧‧‧支台單元138a‧‧‧底壁138b‧‧‧側壁138c‧‧‧上頂壁138d‧‧‧支撐構材(支撐台)138e‧‧‧夾具138f‧‧‧吸引路徑140‧‧‧雷射照射單元142‧‧‧攝像單元(相機)144‧‧‧控制單元146‧‧‧監視器148‧‧‧閥150‧‧‧吸引源152‧‧‧雷射束11‧‧‧被加工物11a‧‧‧表面11b‧‧‧背面13‧‧‧分割預定線(切割道)15‧‧‧裝置17‧‧‧改質層21‧‧‧黏著帶21a‧‧‧表面21b‧‧‧背面2‧‧‧
[圖1]示意性就框架單元的構成例進行繪示的透視圖。 [圖2]示意性就框架單元的構成例進行繪示的剖面圖。 [圖3]示意性就框架單元的一部分進行繪示的平面圖。 [圖4]示意性就框架單元的一部分進行繪示的剖面圖。 [圖5]用於說明有關吸附步驟的透視圖。 [圖6]示意性就雷射加工裝置的構成例進行繪示的透視圖。 [圖7]用於說明有關框架單元支撐步驟及雷射加工步驟的剖面圖。 [圖8]圖8(A)及圖8(B)係用於說明有關剝離步驟的透視圖。[Fig. 1] A perspective view schematically showing an example of the structure of the frame unit. [FIG. 2] A cross-sectional view schematically showing an example of the structure of the frame unit. [Figure 3] A schematic plan view of a part of the frame unit. [Figure 4] A cross-sectional view schematically showing a part of the frame unit. [Figure 5] is a perspective view for explaining the adsorption step. [FIG. 6] A perspective view schematically showing a configuration example of a laser processing device. [Figure 7] is a cross-sectional view for explaining the supporting steps of the frame unit and the laser processing steps. [Fig. 8] Fig. 8(A) and Fig. 8(B) are perspective views for explaining the peeling step.
2‧‧‧框架單元 2‧‧‧Frame unit
4‧‧‧框 4‧‧‧Frame
4a‧‧‧第1面 4a‧‧‧Side 1
4b‧‧‧第2面
4b‧‧‧
4c‧‧‧開口 4c‧‧‧Opening
6‧‧‧底片(樹脂片) 6‧‧‧Negative film (resin film)
6a‧‧‧第1面 6a‧‧‧Side 1
8‧‧‧電極片 8‧‧‧Electrode
12‧‧‧電極層 12‧‧‧Electrode layer
12a‧‧‧正的電極圖案(電極) 12a‧‧‧Positive electrode pattern (electrode)
12b‧‧‧負的電極圖案(電極) 12b‧‧‧Negative electrode pattern (electrode)
12c‧‧‧絕緣區域 12c‧‧‧Insulation area
14‧‧‧遮蓋片 14‧‧‧Mask
16a‧‧‧第1佈線 16a‧‧‧First wiring
16b‧‧‧第2佈線 16b‧‧‧Second wiring
18‧‧‧供電單元 18‧‧‧Power Supply Unit
18a‧‧‧電池保持器 18a‧‧‧Battery holder
18b‧‧‧開關 18b‧‧‧switch
20‧‧‧電池 20‧‧‧Battery
Claims (5)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2017079063A JP6925711B2 (en) | 2017-04-12 | 2017-04-12 | Laser machining method for frame unit and workpiece |
| JP2017-079063 | 2017-04-12 |
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| Publication Number | Publication Date |
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| TW201842550A TW201842550A (en) | 2018-12-01 |
| TWI746821B true TWI746821B (en) | 2021-11-21 |
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| Country | Link |
|---|---|
| JP (1) | JP6925711B2 (en) |
| KR (1) | KR102357807B1 (en) |
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| JP7289592B2 (en) * | 2019-03-26 | 2023-06-12 | 株式会社ディスコ | Inspection board and inspection method |
| JP7282467B2 (en) * | 2019-08-14 | 2023-05-29 | 株式会社ディスコ | processing equipment |
| KR20240172557A (en) * | 2023-06-01 | 2024-12-10 | 앱솔릭스 인코포레이티드 | Substrate gripper and method for moving a substrate using the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP6925711B2 (en) | 2021-08-25 |
| CN108695224B (en) | 2024-02-06 |
| CN108695224A (en) | 2018-10-23 |
| KR102357807B1 (en) | 2022-01-28 |
| KR20180115223A (en) | 2018-10-22 |
| JP2018182047A (en) | 2018-11-15 |
| TW201842550A (en) | 2018-12-01 |
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