TWI746375B - Sensing device - Google Patents

Abstract

A sensing device including a sensing structure layer, a first inorganic layer, a first light blocking pattern, a first organic pattern layer, a second inorganic layer, a second light blocking pattern, a second organic pattern layer, a third inorganic layer, and a plurality of micro lenses. The first inorganic layer is located on the sensing structure layer. The first light blocking pattern is located on the first inorganic layer. The first organic pattern layer including a first opening is located on the first light blocking pattern. The second inorganic layer covers a top surface and a sidewall of the first light blocking pattern. The second light blocking pattern is located on the second inorganic layer. The second organic pattern layer including a second opening is located on the second light blocking pattern. The third inorganic layer covers a top surface and a sidewall of the second light blocking pattern. The plurality of micro lenses are located on the third inorganic layer.

Description

Sensing device

The present invention relates to a sensing device, and particularly relates to a fingerprint sensing device.

Currently, portable electronic devices equipped with biometric systems (such as fingerprints or iris) are developing toward full screens or ultra-narrow bezels. Therefore, in recent years, under-screen optical sensors have been applied to portable electronic devices. The above-mentioned under-screen optical sensor is a micro-optical imaging device placed under the screen of the portable electronic device, and captures an image of an object pressed on the top of the screen through a part of the light-transmitting area of the screen. Taking the fingerprint sensor under the screen as an example, it generally includes a sensing structure layer and an optomechanical structure layer disposed above it. The optomechanical structure layer must be designed with a certain thickness as the focal length due to the microlens. The organic structure layer includes multiple thick film structures stacked on each other; however, the thick film structure itself has a relatively large stress, which causes the fingerprint sensor to warp after it is formed. Processes such as cutting or bonding with the display panel will have an adverse effect.

The present invention provides a sensing device, which can solve the problem of warpage caused by the multi-layer structure.

The sensing device of the present invention includes a sensing structure layer, a first inorganic layer, a first light-shielding pattern, a first organic pattern layer, a second inorganic layer, a second light-shielding pattern, a second organic pattern layer, a third inorganic layer, and multiple layers. A micro lens. The sensing structure layer is located on the substrate and includes a plurality of sensing units. The first inorganic layer is located on the sensing structure layer. The first light-shielding pattern is located on the first inorganic layer and defines a first light-passing area, where the first light-passing area corresponds to the sensing elements of the plurality of sensing units. The first organic pattern layer is located on the first light-shielding pattern and includes a plurality of first organic patterns, wherein there are first openings between adjacent first organic patterns. The second inorganic layer covers the top surface and sidewalls of the first organic pattern layer. The second light-shielding pattern is located on the second inorganic layer and defines a second light-passing area, wherein the second light-passing area corresponds to the first light-passing area. The second organic pattern layer is located on the second light shielding pattern and includes a plurality of second organic patterns, wherein there are second openings between adjacent second organic patterns, and the second openings correspond to the first openings. The plurality of microlenses correspond to the second light passing area.

In an embodiment of the present invention, the above-mentioned part of the first light-shielding pattern is exposed by the first opening, and the second light-shielding pattern covers the sidewall of the first organic pattern layer.

In an embodiment of the present invention, the thickness of the first inorganic layer, the thickness of the second inorganic layer, and the thickness of the third inorganic layer are between 500 angstroms and 3000 angstroms.

In an embodiment of the present invention, the width of the aforementioned first opening is at least greater than 2 microns, and the width of the second opening is at least greater than 3 microns.

In an embodiment of the present invention, the aforementioned sensing device further includes a fourth inorganic layer, a third organic pattern layer, and a filter pattern layer. The fourth inorganic layer is disposed between the second inorganic layer and the third inorganic layer, and covers the top surface and sidewalls of the second organic pattern layer. The third organic pattern layer is located on the fourth inorganic layer and includes a plurality of third organic patterns, wherein there is a third opening between adjacent third organic patterns, and the third opening corresponds to the first opening and the second opening. The filter pattern layer is located between the fourth inorganic layer and the third organic pattern layer.

In an embodiment of the present invention, the aforementioned sensing device further includes a third light-shielding pattern, the third light-shielding pattern is located on the third inorganic layer and defines a third light-passing area, and the third light-passing area corresponds to the second Light passing area.

In an embodiment of the present invention, the aforementioned third light-shielding pattern covers the sidewalls of the first organic pattern layer, the second organic pattern layer, the sidewalls of the filter pattern layer, and the sidewalls of the third organic pattern layer.

In an embodiment of the present invention, the thickness of the first inorganic layer, the thickness of the second inorganic layer, the thickness of the third inorganic layer, and the thickness of the fourth inorganic layer are between 500 angstroms and 3000 angstroms.

In an embodiment of the present invention, the width of the aforementioned first opening is at least greater than 2 microns, the width of the second opening is at least greater than 3 microns, and the width of the third opening is at least greater than 8 microns.

In an embodiment of the present invention, each of the aforementioned multiple sensing units includes an active element and a sensing element, wherein the active element is electrically connected to the sensing element.

In an embodiment of the present invention, the aforementioned sensing device further includes a scan line and a data line, wherein the scan line and the data line are disposed on the substrate and are each electrically connected to the active device.

Based on the above, the sensing device of the present invention has an opening between adjacent organic patterns, thereby achieving the effect of stress dispersion, thereby avoiding the sensing device of the present invention from warping due to the provision of multiple organic pattern layers. The problem. Furthermore, the sensing device of the present invention is also provided with an inorganic layer in the above-mentioned opening, and the stress generated by the organic pattern layer can be reduced by using the characteristic that the direction of the stress generated by the inorganic layer is opposite to the direction of the stress generated by the organic patterned layer. It further avoids the problem of warping caused by the multi-layer organic pattern layer of the sensing device of the present invention.

FIG. 1 is a schematic top view of a sensing device according to an embodiment of the invention. FIG. 2A is a schematic cross-sectional view of a sensing device according to an embodiment of the section line A-A' of FIG. 1.

1 and 2A, the sensing device 100 of this embodiment includes a substrate SB, a sensing structure layer SE, an inorganic layer BP1, a light-shielding pattern BM1, an organic pattern layer PL1, an inorganic layer BP2, a light-shielding pattern BM2, and an organic pattern The layer PL2, the inorganic layer BP3, the filter pattern layer FL, the organic pattern layer PL3, the inorganic layer BP4, and a plurality of microlenses ML.

In some embodiments, the substrate SB may be a flexible substrate or a rigid substrate. In some embodiments, the sensing structure layer SE may include the following components, but it should be noted that the present invention is not limited thereto. The sensing structure layer SE may, for example, include a plurality of sensing units SU, scan lines SL, and read lines DL. In addition, the sensing structure layer SE may also include wiring such as power supply lines (not shown), and the present invention is not limited thereto.

In some embodiments, each of the plurality of sensing units SU includes an active element T and a sensing element SC, but the invention is not limited thereto. The active device T is located on the substrate SB, for example, and includes a gate electrode G, a semiconductor layer CH, a source electrode S, and a drain electrode D. The gate electrode G is provided corresponding to the semiconductor layer CH, for example, and an inter-gate insulating layer GL is provided therebetween. The source electrode S and the drain electrode D are disposed on the inter-gate insulating layer GL and partially contact the semiconductor layer CH. The scan line SL and the read line DL are also disposed on the substrate SB, for example, where the scan line SL is electrically connected to the source S of the active device T, and the read line DL is electrically connected to the drain D of the active device T to Read the signal sensed by the sensing element SC. In some embodiments, the extension direction of the scan line SL and the extension direction of the read line DL are staggered, but the invention is not limited to this. The scan line SL and the read line DL belong to different film layers, for example. In detail, in some embodiments, the scan line SL and the gate G belong to the same film layer (the first metal layer), and the read line DL, the source S and the drain D belong to the same film layer (the second metal layer). ). The method for forming the first metal layer is taken as an example below, but it should be noted that the present invention is not limited thereto. First, the first metal material layer (not shown) can be formed comprehensively on the substrate SB by using a physical vapor deposition method or a metal chemical vapor deposition method. Next, a patterned photoresist material layer (not shown) is formed on the first metal material layer. Afterwards, using the patterned photoresist layer as a mask, an etching process is performed on the first metal material layer to form scan lines SL and gate electrodes G. In this embodiment, the active device T is any bottom gate type thin film transistor well known to those skilled in the art. However, although this embodiment takes the bottom gate type thin film transistor as an example, the present invention is not limited to this. In other embodiments, the active device T may also be a top gate type thin film transistor or other suitable types of thin film transistors.

The sensing element SC is also located on the substrate SB, for example, and includes a first electrode SC1, a photosensitive layer SC2, and a second electrode SC3. The first electrode SC1, the photosensitive layer SC2, and the second electrode SC3 are stacked on the substrate SB in this order, for example. In some embodiments, the area of the second electrode SC3 is larger than the area of the photosensitive layer SC2, and the contours of the first electrode SC1 and the second electrode SC3 may partially overlap. In this embodiment, the first electrode SC1, the read line DL, the source electrode S, and the drain electrode D belong to the same film layer (the second metal layer), but the invention is not limited to this. In other embodiments, the first electrode SC1 may be formed of another metal layer (a third metal layer). In some embodiments, the first electrode SC1 and the second electrode SC2 may include light-transmissive conductive materials or non-light-transmissive conductive materials, depending on the purpose of the sensing device 100. In this embodiment, the sensing device 100 can be used as an under-screen fingerprint sensor. Therefore, light from the outside (for example, light reflected by a fingerprint) will pass through the second electrode SC3 and be incident on the photosensitive layer SC2, based on Here, the second electrode SC3 is made of a light-transmitting conductive material. The photosensitive layer SC2 has the characteristic of converting light energy into electrical energy to realize the function of optical sensing. In some embodiments, the material of the photosensitive layer SC2 may include a silicon-rich material, which may be silicon-rich oxide, silicon-rich nitride, silicon-rich oxynitride, silicon-rich carbide, silicon-rich oxycarbide, hydrogenated silicon-rich Oxide, hydrogenated silicon-rich nitride, hydrogenated silicon-rich carbide or other suitable materials or combinations of the above materials.

In some embodiments, the sensing structure layer SE may further include an organic layer IL1 and an organic layer IL2. The organic layer IL1 is, for example, located on the active device T and the first electrode SC1 of the sensing device SC and covers the active device T. In some embodiments, the organic layer IL1 has an opening O exposing the first electrode SC1 of the sensing element SC, wherein the photosensitive layer SC2 is located in the opening O and contacts the first electrode SC1, and the second electrode SC3 is disposed on the organic layer IL1 and It is in contact with the photosensitive layer SC2. The organic layer IL1 is formed by, for example, a spin coating method. The material of the organic layer IL1 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene (BCB), polymethylmethacrylate (PMMA), polyvinylphenol (poly (4-vinylphenol), PVP), polyvinyl alcohol (PVA), polytetrafluoroethene (PTFE), hexamethyldisiloxane (HMDSO) or a stack of at least two of the above materials , But the present invention is not limited to this. In this embodiment, the organic layer IL1 has a single-layer structure, but the invention is not limited to this. In other embodiments, the organic layer IL1 may have a multilayer structure.

The organic layer IL2 is, for example, located on the organic layer IL1 and covers the second electrode SC3 of the sensing element SC. The organic layer IL2 is formed by, for example, a spin coating method. The material of the organic layer IL2 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene, polymethylmethacrylate, polyvinylphenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethyl Disiloxane or a stacked layer of at least two of the above materials, but the present invention is not limited to this. In this embodiment, the organic layer IL2 has a single-layer structure, but the invention is not limited to this. In other embodiments, the organic layer IL2 may have a multilayer structure.

The inorganic layer BP1 is, for example, located on the sensing structure layer SE, that is, on the organic layer IL2. The method for forming the inorganic layer BP1 is, for example, by using a physical vapor deposition method or a chemical vapor deposition method. In this embodiment, the material of the inorganic layer BP1 can be silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the foregoing materials, but the invention is not limited to this. In this embodiment, the inorganic layer BP1 has a single-layer structure, but the invention is not limited to this. In other embodiments, the inorganic layer BP1 may have a multilayer structure. In some embodiments, the thickness of the inorganic layer BP1 is between 500 angstroms and 3000 angstroms. In a preferred embodiment, the thickness of the inorganic layer BP1 is between 1500 angstroms and 2000 angstroms. In this embodiment, the inorganic layer BP1 having the above thickness range can balance the subsequent warpage caused by the arrangement of the organic pattern layer PL1.

The light-shielding pattern BM1 is located on the inorganic layer BP1, for example, and is used to define the light-exit region LR1. In detail, the material of the light-shielding pattern BM1 includes light-shielding and/or reflective materials, which can be metals, alloys, nitrides of the aforementioned materials, oxides of the aforementioned materials, oxynitrides of the aforementioned materials, or other suitable light-shielding and/or reflective materials. / Or reflective material. In some embodiments, the material of the light shielding pattern BM1 may be molybdenum, molybdenum oxide or a stacked layer thereof. Based on this, the area where the light shielding pattern BM1 is not provided can define the light passing area LR1. The arrangement of the light shielding pattern BM1 can effectively prevent the stray light from being incident on the plurality of sensing units SU, so as to prevent the stray light from affecting the sensing result. In this embodiment, the light-passing area LR1 is arranged corresponding to the sensing element SC of the sensing unit SU, so that the sensing element SC can convert the light passing through the light-passing area LR1 from the outside into a corresponding electrical signal. In addition, in some embodiments, the area provided with the light shielding pattern BM1 may be used to shield the active element T of the sensing unit SU (not shown in the drawing). In detail, the light shielding pattern BM1 may be located above the active device T and at least shield the semiconductor layer CH of the active device T, so as to prevent light from outside from irradiating the semiconductor layer CH, thereby avoiding leakage of the active device T. The method for forming the light shielding pattern BM1 is, for example, first forming a light shielding pattern material layer (not shown) by using a sputtering method or other methods. Then, a patterned photoresist material layer (not shown) is formed on the light-shielding pattern material layer. After that, using the patterned photoresist layer as a mask, an etching process is performed on the light-shielding pattern material layer to form the light-shielding pattern BM1.

The organic pattern layer PL1 is, for example, located on the inorganic layer BP1 and covers the light shielding pattern BM1. The method for forming the organic pattern layer PL1 is, for example, firstly using a spin coating method to form an organic pattern material layer (not shown). Next, a patterned photoresist material layer (not shown) is formed on the organic pattern material layer. Afterwards, using the patterned photoresist layer as a mask, an etching process is performed on the organic pattern material layer. The material of the organic pattern layer PL1 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene, polymethylmethacrylate, polyvinylphenol, polyvinyl alcohol, polytetrafluoroethylene, hexafluoroethylene Methyl disiloxane or a stacked layer of at least two of the above materials, but the present invention is not limited to this. In this embodiment, the organic pattern layer PL1 has a single-layer structure, but the invention is not limited to this. In other embodiments, the organic pattern layer PL1 may have a multilayer structure. In this embodiment, the organic pattern layer PL1 includes a plurality of organic patterns, wherein adjacent organic patterns have openings OP1 between them. The opening OP1 corresponds to, for example, a part of the scan line SL, a part of the read line DL, or a combination thereof, and the present invention is not limited thereto. For example, the opening OP1 may correspond to the area where the scan line SL and the read line DL are set, and may correspond to the area where each scan line SL and each read line DL is set, or may correspond to more than two scan lines. One scan line SL in the group composed of SL and one read line DL in the group composed of two or more read lines DL correspond to the area provided. In some embodiments, the width of the opening OP1 is at least greater than 2 microns. In this embodiment, by providing the organic pattern layer PL1 with the opening OP1, the stress of the original unpatterned organic pattern material layer can be reduced, thereby achieving the effect of stress dispersion.

The inorganic layer BP2 is, for example, located on the organic pattern layer PL1, and covers the top surface PL1_T and the sidewalls PL1_S of the organic pattern layer PL1. In detail, a part of the inorganic layer BP2 will be disposed on the top surface PL1_T of the organic pattern layer PL1, and another part of the inorganic layer BP2 will be conformally disposed in the opening OP1 to cover the organic pattern layer PL1. The sidewalls PL1_S and part of the inorganic layer BP1. The method for forming the inorganic layer BP2 is, for example, by using a physical vapor deposition method or a chemical vapor deposition method. In some embodiments, the material of the inorganic layer BP2 can be silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the foregoing materials. In this embodiment, the material of the inorganic layer BP2 is silicon nitride. In this embodiment, the inorganic layer BP2 has a single-layer structure, but the invention is not limited to this. In other embodiments, the inorganic layer BP2 may have a multilayer structure. In some embodiments, the thickness of the inorganic layer BP2 is between 500 angstroms and 3000 angstroms. In a preferred embodiment, the thickness of the inorganic layer BP2 is between 1500 angstroms and 2000 angstroms. Due to the relationship between the included materials and thickness, the direction of stress generated by the inorganic layer BP2 is opposite to the direction of stress generated by the organic pattern layer PL1. Therefore, the inorganic layer BP2 corresponding to the organic pattern layer PL1 can reduce the stress generated by the organic pattern layer PL1, and The inorganic layer BP2 disposed in the opening OP1 between adjacent organic patterns can balance the warpage caused by the disposition of the organic pattern layer PL1.

The light-shielding pattern BM2 is located on the inorganic layer BP2, for example, and is used to define the light-exit area LR2. In detail, the material of the light-shielding pattern BM2 includes light-shielding and/or reflective materials, which may be metals, alloys, nitrides of the aforementioned materials, oxides of the aforementioned materials, oxynitrides of the aforementioned materials, or other suitable light-shielding and/or reflective materials. / Or reflective material. In some embodiments, the material of the light shielding pattern BM2 may be molybdenum, molybdenum oxide or a stacked layer thereof. Based on this, the area where the light shielding pattern BM2 is not provided can define the light passing area LR2. The arrangement of the light shielding pattern BM2 can effectively prevent the stray light from being incident on the plurality of sensing units SU, so as to prevent the stray light from affecting the sensing result. In this embodiment, the light passing area LR2 is provided corresponding to the light passing area LR1, that is, it is provided corresponding to the sensing element SC of the sensing unit SU, so that the sensing element SC can pass the light passing area LR2 and The outside light in the light passing area LR1 is converted into a corresponding electrical signal. The method for forming the light shielding pattern BM2 is, for example, first forming a light shielding pattern material layer (not shown) by using a sputtering method or other methods. Then, a patterned photoresist material layer (not shown) is formed on the light-shielding pattern material layer. Afterwards, using the patterned photoresist layer as a mask, an etching process is performed on the light-shielding pattern material layer to form the light-shielding pattern BM2.

The organic pattern layer PL2 is, for example, located on the inorganic layer BP2 and covers the light shielding pattern BM2. The method for forming the organic pattern layer PL2 is, for example, first forming an organic pattern material layer (not shown) by a spin coating method. Next, a patterned photoresist material layer (not shown) is formed on the organic pattern material layer. Afterwards, using the patterned photoresist layer as a mask, an etching process is performed on the organic pattern material layer. The material of the organic pattern layer PL2 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, and hexafluoroethylene. Methyl disiloxane or a stacked layer of at least two of the above materials, but the present invention is not limited to this. In this embodiment, the organic pattern layer PL2 has a single-layer structure, but the invention is not limited to this. In other embodiments, the organic pattern layer PL2 may have a multilayer structure. In this embodiment, the organic pattern layer PL2 includes a plurality of organic patterns, wherein adjacent organic patterns have openings OP2 between them. The opening OP2 also corresponds to, for example, a portion of the scan line SL, a portion of the read line DL, or a combination thereof, which is not described here in this embodiment. In this embodiment, the opening OP2 corresponds to the opening OP1, that is, the opening OP2 and the opening OP1 communicate with each other. In some embodiments, the width of the opening OP2 is at least greater than 3 microns. In this embodiment, by providing the organic pattern layer PL2 with the opening OP2, the stress of the original unpatterned organic pattern material layer can also be reduced, thereby achieving the effect of stress dispersion.

The inorganic layer BP3 is, for example, located on the organic pattern layer PL2, and covers the top surface PL2_T and the sidewalls PL2_S of the organic pattern layer PL2. In detail, a part of the inorganic layer BP3 will be disposed on the top surface PL2_T of the organic pattern layer PL2, and another part of the inorganic layer BP3 will be conformally disposed in the opening OP2 to cover the surface of the organic pattern layer PL2. Side wall PL2_S. In addition, in this embodiment, since the opening OP2 and the opening OP1 are connected to each other, the inorganic layer BP3 is also conformally disposed in the opening OP1 to cover the part of the inorganic layer BP2 located in the opening OP1. The method for forming the inorganic layer BP3 is, for example, by using a physical vapor deposition method or a chemical vapor deposition method. In some embodiments, the material of the inorganic layer BP3 may be silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the foregoing materials. In this embodiment, the material of the inorganic layer BP3 is silicon nitride. In this embodiment, the inorganic layer BP3 has a single-layer structure, but the invention is not limited to this. In other embodiments, the inorganic layer BP3 may have a multilayer structure. In some embodiments, the thickness of the inorganic layer BP3 is between 500 angstroms and 3000 angstroms. In a preferred embodiment, the thickness of the inorganic layer BP3 is between 1500 angstroms and 2000 angstroms. Due to the relationship between the included materials and thickness, the direction of stress generated by the inorganic layer BP3 is opposite to the direction of stress generated by the organic pattern layer PL2. Therefore, the inorganic layer BP3 corresponding to the organic pattern layer PL2 can reduce the stress generated by the organic pattern layer PL2, and The inorganic layer BP3 disposed in the opening OP2 between adjacent organic patterns can balance the warpage caused by the disposition of the organic pattern layer PL2.

The filter pattern layer FL is located on the inorganic layer BP3, for example. In this embodiment, the filter pattern layer FL is provided corresponding to the organic pattern layer PL2, and is not provided in the opening OP2 and the opening OP1. In some embodiments, the filter pattern layer FL can provide a light filtering effect. In detail, in this embodiment, the filter pattern layer FL may be an infrared cut (IR-cut) filter pattern layer. That is, when the sensing unit SU of this embodiment converts visible light from the outside into an electrical signal, it usually converts infrared light that is not visible to the naked eye into an electrical signal, so that when the electrical signal is converted into an image display, the display The resulting image is susceptible to infrared light and has distortion or dispersion. Based on this, this embodiment can avoid this problem by disposing the filter pattern layer FL. However, the present invention is not limited to this. When the sensing unit SU of this embodiment converts infrared light from the outside into electrical signals, the filter pattern layer FL of this embodiment can be an infrared pass (IR pass) Filter pattern layer. In addition, in other embodiments, the filter pattern layer FL may also be other types of filter layers.

The organic pattern layer PL3 is, for example, located on the inorganic layer BP3 and provided corresponding to the filter pattern layer FL, that is, the filter pattern layer FL is located between the inorganic layer BP3 and the organic pattern layer PL3. The method of forming the organic pattern layer PL3 is, for example, first forming an organic pattern material layer (not shown) by a spin coating method. Next, a patterned photoresist material layer (not shown) is formed on the organic pattern material layer. Afterwards, using the patterned photoresist layer as a mask, an etching process is performed on the organic pattern material layer. The material of the organic pattern layer PL3 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, six Methyl disiloxane or a stacked layer of at least two of the above materials, but the present invention is not limited to this. In this embodiment, the organic pattern layer PL3 has a single-layer structure, but the invention is not limited to this. In other embodiments, the organic pattern layer PL3 may have a multilayer structure. In this embodiment, the organic pattern layer PL3 includes a plurality of organic patterns, wherein adjacent organic patterns have openings OP3 between them. The opening OP3 also corresponds to, for example, a part of the scan line SL, a part of the read line DL, or a combination thereof, and this embodiment will not be repeated here. In this embodiment, the opening OP3 corresponds to the opening OP2, that is, the opening OP3, the opening OP2, and the opening OP1 communicate with each other to form the opening OP. In some embodiments, the width of the opening OP3 is at least greater than 8 microns. In this embodiment, by providing the organic pattern layer PL3 with the opening OP3, the stress of the original unpatterned organic pattern material layer can also be reduced, thereby achieving the effect of stress dispersion.

The inorganic layer BP4 is, for example, located on the organic pattern layer PL3 and covers the top surface PL3_T and the sidewalls PL3_S of the organic pattern layer PL3. In detail, a part of the inorganic layer BP4 will be disposed on the top surface PL3_T of the organic pattern layer PL3, and another part of the inorganic layer BP4 will be conformally disposed in the opening OP3 to cover the organic pattern layer PL3. The side wall PL3_S. In addition, in this embodiment, since the opening OP3, the opening OP2, and the opening OP1 are connected to each other, the inorganic layer BP4 is also conformally disposed in the opening OP2 and the opening OP1 to cover the part of the inorganic layer BP3 located in the opening OP2. And a part of the inorganic layer BP2 located in the opening OP1. The method for forming the inorganic layer BP4 is, for example, by using a physical vapor deposition method or a chemical vapor deposition method. In some embodiments, the material of the inorganic layer BP4 may be silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the foregoing materials. In this embodiment, the material of the inorganic layer BP4 is silicon nitride. In this embodiment, the inorganic layer BP4 has a single-layer structure, but the invention is not limited to this. In other embodiments, the inorganic layer BP4 may have a multilayer structure. In some embodiments, the thickness of the inorganic layer BP4 is between 500 angstroms and 3000 angstroms. In a preferred embodiment, the thickness of the inorganic layer BP4 is between 1500 angstroms and 2000 angstroms. Due to the relationship between the included materials and thickness, the direction of stress generated by the inorganic layer BP4 is opposite to the direction of stress generated by the organic pattern layer PL3. Therefore, the inorganic layer BP4 corresponding to the organic pattern layer PL3 can reduce the stress generated by the organic pattern layer PL3, and The inorganic layer BP4 disposed in the opening OP3 between adjacent organic patterns can balance the warpage caused by the disposition of the organic pattern layer PL3.

The sensing device 100 of this embodiment may further include a light shielding pattern BM3. The light-shielding pattern BM3 is, for example, located on the inorganic layer BP4, and is used to define the light-exit area LR3. In detail, the material of the light-shielding pattern BM3 includes light-shielding and/or reflective materials, which can be metals, alloys, nitrides of the aforementioned materials, oxides of the aforementioned materials, oxynitrides of the aforementioned materials, or other suitable light-shielding and/or reflective materials. / Or reflective material. In some embodiments, the material of the light shielding pattern BM3 may be molybdenum, molybdenum oxide or a stacked layer thereof. Based on this, the area where the light shielding pattern BM3 is not provided can define the light passing area LR3. The arrangement of the light shielding pattern BM3 can effectively prevent the stray light from being incident on the plurality of sensing units SU, so as to prevent the stray light from affecting the sensing result. In the present embodiment, the light passing area LR3 and the light passing area LR2 are arranged correspondingly, that is, corresponding to the sensing element SC of the sensing unit SU, so that the sensing element SC can pass through the light passing area LR3, The light passing area LR2 and light passing area LR1 are converted into corresponding electrical signals. The method for forming the light-shielding pattern BM3 is, for example, first forming a light-shielding pattern material layer (not shown) by using a sputtering method or other methods. Then, a patterned photoresist material layer (not shown) is formed on the light-shielding pattern material layer. After that, using the patterned photoresist layer as a mask, an etching process is performed on the light-shielding pattern material layer to form the light-shielding pattern BM3.

The plurality of microlenses ML are, for example, located on the inorganic layer BP4 and correspond to the second light passing area LR2, that is, disposed in the third light passing area LR3. In detail, the plurality of microlenses ML are located in the third light passing area LR3 defined by the light shielding pattern BM3, and are arranged corresponding to the plurality of sensing units SU. For example, the plurality of microlenses ML are arranged in an array, and have a central axis (not shown) passing through the center thereof. In some embodiments, the opening OP1, the opening OP2, and the opening OP3 also have a central axis (not shown) passing through the center thereof, and the central axis of the microlens ML is aligned with the central axis of the opening OP1, the opening OP2, and the opening OP3. , But the present invention is not limited to this. Based on this, a plurality of microlenses ML can be used to further improve the light collimation effect, so as to reduce light leakage and light mixing caused by scattered light or refracted light. In some embodiments, the plurality of microlenses ML may be a symmetric biconvex lens, an asymmetric biconvex lens, a plano-convex lens or a meniscus lens, and the present invention is not limited thereto. In addition, each or more of the plurality of microlenses ML are provided corresponding to one sensing unit SU, but the invention is not limited to this.

Based on the above, in this embodiment, by arranging multiple organic pattern layers on the sensing structure layer, there are openings between adjacent organic patterns in each layer, thereby reducing the unpatterned multilayer organic pattern material layer. The stress is used to achieve the effect of stress dispersion, so as to avoid the problem of warping caused by the multi-layer structure of the sensing device of this embodiment. Furthermore, in this embodiment, an inorganic layer is also provided in the above-mentioned opening. By selecting a suitable material and thickness, the direction of the stress generated by the inorganic layer is opposite to the direction of the stress generated by the organic patterned layer. Therefore, the inorganic layer is disposed on the The opening can also reduce the stress generated by the organic pattern layer, which further avoids the problem of warping caused by the multi-layer organic pattern layer of the sensing device of this embodiment.

FIG. 2B is a schematic cross-sectional view of a sensing device according to another embodiment according to the section line A-A' of FIG. 1. It must be noted here that the embodiment shown in FIG. 2B follows the element numbers and part of the content of the embodiment in FIG. 2A, wherein the same or similar reference numbers are used to denote the same or similar elements, and the description of the same technical content is omitted. . For the description of the omitted parts, please refer to the descriptions and effects of the foregoing embodiments. The following embodiments will not be repeated, and at least part of the descriptions that are not omitted in the embodiment shown in FIG. 2B can be referred to the subsequent content.

1 and 2B at the same time, the main difference between the sensing device 200 of this embodiment and the sensing device 100 of the previous embodiment is: the light shielding pattern BM1, the light shielding pattern BM2 and the light shielding in the sensing device 200 of this embodiment The patterns BM3 are further respectively arranged in the opening OP. In detail, a part of the light-shielding pattern BM1 disposed on the inorganic layer BP1 is not covered by the organic pattern layer PL1 and is exposed. From another perspective, the part of the light-shielding pattern BM1 is disposed at the bottom of the opening OP1. Similarly, a part of the light-shielding pattern BM2 disposed on the inorganic layer BP2 is not covered by the organic pattern layer PL2 and is exposed. From another point of view, the part of the light-shielding pattern BM2 is located on the sidewall PL1_S of the organic pattern layer PL1. It is arranged in the opening OP1 and covers the inorganic layer BP2 in the opening OP1. In addition, part of the light-shielding pattern BM3 is further disposed in the opening OP1, the opening OP2, and the opening OP3. From another perspective, the light-shielding pattern BM3 disposed on an organic pattern layer PL3 and adjacent to the opening OP extends into the opening OP. And it is connected to the light shielding pattern BM3 disposed on the adjacent organic pattern layer PL3 and adjacent to the opening OP.

The sensing device 200 of this embodiment can shield large-angle light (such as oblique light) from the outside and avoid light leakage by disposing the light-shielding pattern BM1, the light-shielding pattern BM2, and the light-shielding pattern BM3 in the opening OP. Based on this, the sensing device 200 of the present embodiment, for example, when used as an under-screen fingerprint sensor, can avoid the stray light interference caused by the oblique light on the sensing unit SU, thereby improving the signal-to-noise ratio of the light for clearer Fingerprint image. In addition, the sensing device 200 of this embodiment also avoids the distortion of the sensed image. Based on the foregoing, the sensing device 200 of the present embodiment facilitates fingerprint recognition by disposing the light-shielding pattern BM1, the light-shielding pattern BM2, and the light-shielding pattern BM3 in the opening OP.

3 is a schematic cross-sectional view of an electronic device according to an embodiment of the invention.

Please refer to FIG. 3. FIG. 3 shows an electronic device 10. In some embodiments, the electronic device 10 may be an under-screen fingerprint recognition device, such as an electronic device such as a smart phone, a tablet computer, a notebook computer, or a touch-sensitive display device. The electronic device 10 of this embodiment includes, for example, a display panel 1000 and a sensing device 100. The display panel 1000 and the sensing device 100 can be bonded by a sealant FG, and the invention is not limited thereto. For example, the display panel 1000 is suitable for providing the illuminating light beam L1 to the finger F through the light-emitting structure LE, and then reflecting the sensing light beam L2 therethrough. In this embodiment, the display panel 1000 is an organic light-emitting diode (OLED) display panel, but the invention is not limited to this. In other embodiments, the display panel 1000 may also be a liquid crystal display panel or other suitable display panels. The sensing device 100 is, for example, disposed under the display panel 1000 to receive the sensing light beam L2 reflected by the finger F, thereby performing fingerprint recognition.

In summary, the sensing device of the present invention is provided with multiple organic pattern layers on the sensing structure layer, so that there are openings between adjacent organic pattern layers in each layer, thereby reducing the original The stress of the patterned organic pattern material layer can achieve the effect of stress dispersion, thereby avoiding the problem of warping caused by the multi-layer structure of the sensing device of this embodiment. Furthermore, the sensing device of the present invention is also provided with an inorganic layer in the above-mentioned opening, and the direction of the stress generated by the inorganic layer is opposite to the direction of the stress generated by the organic pattern layer by selecting appropriate materials and thickness. The placement of the layer in the opening can also reduce the stress generated by the organic patterned layer, which further avoids the problem of warping caused by the multi-layer organic patterned layer provided in the sensing device of the present invention.

10: Electronic device 100, 200: sensing device 1000: display panel A-A’: Cut line BM1, BM2, BM3: shading pattern BP1, BP2, BP3, BP4: inorganic layer CH: semiconductor layer D: Dip pole DL: read line F: Finger FG: frame glue FL: filter pattern layer G: Gate GL: Insulation layer between gates IL1, IL2: organic layer L1: Illumination beam L2: Sensing beam LE: Light emitting structure LR1, LR2, LR3: Light passing area ML: Micro lens O, OP, OP1, OP2, OP3: opening PL1, PL2, PL3: organic pattern layer PL1_S, PL2_S, PL3_S: side wall PL1_T, PL2_T, PL3_T: top surface S: source SB: Substrate SC: sensing element SC1: first electrode SC2: photosensitive layer SC3: second electrode SE: Sensing structure layer SL: scan line SU: Sensing unit T: Active component

FIG. 1 is a schematic top view of a sensing device according to an embodiment of the invention. FIG. 2A is a schematic cross-sectional view of a sensing device according to an embodiment of the section line A-A' of FIG. 1. FIG. 2B is a schematic cross-sectional view of a sensing device according to another embodiment according to the section line A-A' of FIG. 1. 3 is a schematic cross-sectional view of an electronic device according to an embodiment of the invention.

100: sensing device

A-A’: Cut line

BM1, BM2, BM3: shading pattern

BP1, BP2, BP3, BP4: inorganic layer

DL: read line

FL: filter pattern layer

GL: Insulation layer between gates

IL1, IL2: organic layer

LR1, LR2, LR3: Light passing area

ML: Micro lens

O, OP, OP1, OP2, OP3: opening

PL1, PL2, PL3: organic pattern layer

PL1_S, PL2_S, PL3_S: side wall

PL1_T, PL2_T, PL3_T: top surface

SB: Substrate

SC: sensing element

SC1: first electrode

SC2: photosensitive layer

SC3: second electrode

SE: Sensing structure layer

Claims (11)

A sensing device includes: The sensing structure layer is located on the substrate and includes a plurality of sensing units; The first inorganic layer is located on the sensing structure layer; A first light-shielding pattern located on the first inorganic layer and defining a first light-passing area, the first light-passing area corresponding to the sensing elements of the plurality of sensing units; The first organic pattern layer is located on the first light-shielding pattern and includes a plurality of first organic patterns, wherein there are first openings between adjacent first organic patterns; A second inorganic layer covering the top surface and sidewalls of the first organic pattern layer; A second light-shielding pattern located on the second inorganic layer and defining a second light-passing area, the second light-passing area corresponding to the first light-passing area; The second organic pattern layer is located on the second light-shielding pattern and includes a plurality of second organic patterns, wherein there are second openings between adjacent second organic patterns, and the second openings correspond to the first Opening A third inorganic layer covering the top surface and sidewalls of the second organic pattern layer; and A plurality of microlenses correspond to the second light passing area. The sensing device according to claim 1, wherein a part of the first light shielding pattern is exposed by the first opening, and the second light shielding pattern covers the sidewall of the first organic pattern layer. The sensing device according to claim 1, wherein the thickness of the first inorganic layer, the thickness of the second inorganic layer, and the thickness of the third inorganic layer are between 500 angstroms and 3000 angstroms. The sensing device according to claim 1, wherein the width of the first opening is at least greater than 2 microns, and the width of the second opening is at least greater than 3 microns. The sensing device according to claim 1, which further includes: A fourth inorganic layer, disposed between the second inorganic layer and the third inorganic layer, and covering the top surface and sidewalls of the second organic pattern layer; The third organic pattern layer is located on the fourth inorganic layer and includes a plurality of third organic patterns, wherein there is a third opening between adjacent third organic patterns, and the third opening corresponds to the first An opening and the second opening; and The filter pattern layer is located between the fourth inorganic layer and the third organic pattern layer. The sensing device according to claim 5, further comprising a third light-shielding pattern, wherein the third light-shielding pattern is located on the third inorganic layer and defines a third light-passing area, the third light-passing area Corresponds to the second light passing area. The sensing device according to claim 6, wherein the third light shielding pattern covers the sidewalls of the first organic pattern layer, the sidewalls of the second organic pattern layer, the sidewalls of the filter pattern layer, and the The sidewall of the third organic pattern layer. The sensing device according to claim 5, wherein the thickness of the first inorganic layer, the thickness of the second inorganic layer, the thickness of the third inorganic layer and the thickness of the fourth inorganic layer are between 500 Between Angstroms and 3000 Angstroms. The sensing device according to claim 5, wherein the width of the first opening is at least greater than 2 microns, the width of the second opening is at least greater than 3 microns, and the width of the third opening is at least greater than 8 microns. The sensing device according to claim 1, wherein each of the plurality of sensing units includes an active element and the sensing element, and the active element is electrically connected to the sensing element. The sensing device according to claim 10, further comprising a scan line and a data line, the scan line and the data line are disposed on the substrate and are each electrically connected to the active device.

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