TWI745898B - Material detection method for electron microscope - Google Patents

Abstract

The present invention provides a material detection method for an electron microscope, which is based on a base layer electroplating an electroplated layer according to a coating time, and a detection light having a first illuminance value is irradiated from above the electroplated layer, which sequentially passes through After the electroplating layer and the base layer, a control light is formed, and then the control light is received to obtain a second illuminance value of the control light, and finally the thickness of the electroplating layer is calculated according to the first and second illuminance values and the coating is corrected Time, using these steps to detect the thickness of the electroplated layer, and correct the coating time according to the thickness to achieve the best coating time.

Description

Material detection method for electron microscope

The present invention relates to a material detection method for electron microscopy, in particular to a method that can detect the thickness of the electroplating layer of a sample used for electron microscopy.

Electron microscope (electron microscope or electron microscope for short) is a microscope that uses electrons to display the interior or surface of an object. It contains a kind of accelerated and concentrated electron beam that is projected onto a very thin sample. The electrons and the atoms in the sample The collision changes direction, resulting in solid angle scattering. The size of the scattering angle is related to the density and thickness of the sample, so images with different brightness and darkness can be formed. The images will be enlarged and focused on the electron microscope displayed on imaging devices (such as fluorescent screens, films, and photosensitive coupling components). That is, the ransmission electron microscope (TEM/CTEM), or transmission electron microscope for short.

Because the de Broglie wavelength of electrons is very short, the resolution of the transmission electron microscope is much higher than that of the optical microscope, and the magnification of 0.01～0.02μm can be tens of thousands to millions of times. Therefore, the use of a transmission electron microscope can be used to observe the fine structure in the sample, and can even be used to observe the structure of a single row of atoms, which is tens of thousands of times smaller than the smallest structure that can be observed by an optical microscope. Because the transmission electron microscope can observe such subtle objects, it is an important analytical instrument in many related scientific fields such as physics and biology, such as cancer research, virology, materials science, nanotechnology, and semiconductors. Research and so on.

The transmission electron microscope includes a plurality of elements, which are an electron emission source for generating an electron beam, a vacuum system for transmitting the electron beam, a plurality of electromagnetic lenses and an electrostatic disk; among them, a plurality of electromagnetic lenses and an electrostatic disk system allow The operator operates the electron beam as required; in addition, the conventional penetrating electron microscope also requires a device to move the sample into or out of the electron beam channel, and to move the sample in the channel, and an imaging device to emit the aforementioned system Of electron beam imaging.

Before using a transmission electron microscope to observe a sample, the sample must be processed first, and different processing methods are used according to the needs of different research requirements; for example, the sample must be cut before using a transmission electron microscope to observe a metal sample. Make a very thin sheet (for example, 0.1 mm or less), and then use electropolishing technology to continue to make the metal thinner, and finally a hole is formed in the center of the sample, and electrons can pass through the very thin metal near the hole. For example, metals that cannot be electropolished, non-conductive or poor conductive materials, such as silicon, are generally thinned mechanically and then processed by ion bombardment. Among them, in order to prevent non-conductive samples from being used in the scanning electron microscope In the accumulation of static electricity, their surface must be covered with a conductive layer to exclude excess electrons.

The conventional method of covering the conductive layer is to use electroplating to plate a metal layer on the sample. However, if the metal layer is too thick, the sample cannot be imaged by a transmission electron microscope. If the metal layer is too thin, the electrons It will still accumulate, resulting in fire and inability to image. If the thickness of the metal layer is not known, the observer must repeatedly plate the sample for different lengths of time to try, which not only takes time but also incurs a lot of extra cost; therefore, the scientific community And the industry urgently needs a method that can measure the metal layer of the sample after electroplating with a penetrating electron microscope to reduce the external cost.

In view of the above-mentioned problems of the prior art, the present invention provides a material detection method for electron microscopy, which is based on the base layer electroplating the electroplated layer according to the coating time, and the detection light is irradiated from above the electroplated layer to pass through in sequence The electroplating layer and the base layer form a contrast light, and then receive the contrast light to obtain the illuminance value of the contrast light, and finally calculate the thickness of the electroplating layer and correct the coating time according to the illuminance values of the detection light and the contrast light, In order to achieve the best coating time.

An object of the present invention is to provide a material detection method for electron microscopy, which electroplates an electroplated layer on a base layer according to a coating time, and irradiates a detection light from above the electroplated layer, which sequentially passes through the electroplated layer. The electroplating layer and the base layer form a contrast light, and then receive the contrast light to obtain the illuminance value of the contrast light, and finally calculate the thickness of the electroplating layer and correct the coating time according to the illuminance values of the detection light and the contrast light, to Get the best coating time.

In order to achieve the above-mentioned objectives and effects, the present invention provides a material inspection method for electron microscopy. The steps include: electroplating a base layer with an electroplated layer according to a coating time, and then emitting a light source with a first illuminance One value is the detection light, the detection light sequentially passes through the electroplating layer and the base layer, and forms a contrast light, receives the contrast light, obtains a second illuminance value of the contrast light, and finally according to the first illuminance value and The second illuminance value calculates a thickness of the electroplating layer and corrects the coating time; this method is used to achieve the effect of detecting the thickness of the electroplating layer and obtain the best coating time of the electroplating layer.

In an embodiment of the present invention, the base layer is a transparent member.

In an embodiment of the present invention, the material of the base layer is glass.

In an embodiment of the present invention, the material of the electroplating layer is noble metal.

In an embodiment of the present invention, the first illuminance value of the detection light is 100,000 lux light.

In an embodiment of the present invention, wherein the second illuminance value of the control light is a light less than 100,000 lux.

In an embodiment of the present invention, in the step of receiving the control light and obtaining a second illuminance value of the control light, an illuminance meter is used to obtain the second illuminance value of the control light.

In order to enable your reviewer to have a further understanding and understanding of the features of the present invention and the effects achieved, the following examples and accompanying descriptions are provided. The description is as follows:

The present invention provides a material detection method for electron microscope, which is based on a base layer electroplating an electroplating layer according to a coating time, and irradiating a detection light from above the electroplating layer to pass through the electroplating layer and the electroplating layer in sequence. After the base layer, a contrast light is formed. After receiving the contrast light to obtain the illuminance value of the contrast light, the thickness of the electroplating layer and the correction of the coating time are calculated according to the illuminance values of the detection light and the contrast light.

Please refer to Fig. 1, which is a schematic diagram of the steps of an embodiment of the present invention. As shown in the figure, it is a material inspection method for electron microscope. The steps include:

Step S02: electroplating an electroplated layer on the base layer according to the coating time;

Step S04: Use the light source to emit the detection light with the first illuminance value, and the detection light sequentially passes through the electroplating layer and the base layer to form a contrast light;

Step S06: Receive the control light, and obtain the second illuminance value of the control light; and

Step S08: Calculate the thickness of the electroplating layer and correct the coating time according to the first illuminance value and the second illuminance value.

Refer to Figure 1 and Figure 2 again. Figure 2 is a schematic diagram of the electroplating layer according to the embodiment of the present invention. A base layer 10 is prepared first. The base layer 10 of this embodiment uses a transparent material, such as a base layer 10 of glass material, but this embodiment is not limited to this; then an electroplating device 2 is used to place a base layer 10 on top of one of the base layers 10 The plating time is used to electroplate an electroplated layer 20. This step is used to electroplate the electroplated layer 20 before the base layer 10 to simulate the electroplating layer required on the electron microscope sample, and the electroplating of the electroplated layer 20 is controlled by the plating time; wherein, In this embodiment, the electroplating layer 20 of noble metal is used for electroplating on the base layer 10. The coating time is the electroplating time of the electroplating device 2 at 20 milliamperes (mA), and the unit is seconds, such as 10 Seconds, 20 seconds, which can also be microseconds, which is not limited in this embodiment.

Please refer to Figure 3, which is a schematic diagram of the irradiation step of the embodiment of the present invention. As shown in the figure, in this embodiment, in this step S04, the light source emits the detection light with the first illuminance value, and the detection light passes through in sequence In the electroplating layer and the base layer, and forming the contrast light, a light source 3, such as a light-emitting diode or a laser device, is first prepared. This embodiment is not limited here, and the light source 3 emits a first illuminance value for detection The light L1 causes the detection light L1 to pass through the electroplating layer 20 and the base layer 10 sequentially. The detection light L1 passes through the semi-transparent electroplating layer 20 and produces a change in illuminance to form a contrast light L2; in this embodiment , The first illuminance value of the detection light L1 is 100,000 lux.

Referring again to Fig. 3, as shown in the figure, in this embodiment, in step S06 receiving the control light and obtaining the second illuminance value of the control light, an illuminance meter 4 receives the control light L2 to obtain the control light L2 A second illuminance value; wherein, because the contrast light L2 passes through the electroplating layer 20 and the base layer 10, the second illuminance of the contrast light L2 is less than 100,000 lux; in this embodiment, The illuminance meter 4 can also be called a photometer, which is a special instrument for measuring illuminance (or luminosity). Illumination is the intensity of light, which is the ratio of the luminous flux obtained on the surface of the object to the illuminated area. The conventional illuminance meter is often It is composed of selenium photovoltaic cell or silicon photovoltaic cell and microammeter.

Please refer to Figure 4, which is a schematic diagram of the relationship between the illuminance and the coating time of the embodiment of the present invention. As shown in the figure, in this embodiment, the step S08 calculates the thickness of the electroplating layer according to the first illuminance value and the second illuminance value In the correction coating time, the first illuminance value of the detection light L1 is 100,000 lux, and the measured illuminance value in Figure 4 is the second illuminance value of the control light L2, as shown in Figure 4. The coating time is the shortest 0 second, the second illuminance value of the control light L2 is 99000 lux (lux), when the sampled coating time is longer, a thickness T of the electroplating layer 20 (as shown in Figures 2 and 3) (Shown) will become thicker and thicker, making the second illuminance value of the control light L2 smaller and smaller. Therefore, the first illuminance value can be used as a standard, and the first illuminance value and the second illuminance value can be used to calculate the If the thickness T of the electroplating layer 20 is too thick or too thin, the coating time is corrected to find the best coating time, which will produce a better image when used in an electron microscopy device.

In this embodiment, the base layer 10 is electroplated with the electroplated layer 20 according to the coating time as a test piece of an electron microscope sample, and then the electroplated layer 20 is irradiated with the light source 2 so that the detection light L1 sequentially passes through the electroplating from above After the layer 20 and the base layer 10, a control light L2 is formed, and then the control light L2 is received to obtain the second illuminance value of the control light L2, and finally the electroplating layer 20 is calculated according to the first and second illuminance values The thickness T and the correction of the coating time, the thickness T of the electroplating layer 20 is measured by the magnitude of the illuminance value, and the coating time is corrected according to the thickness T to reach the optimal coating time.

In summary, the present invention provides a material detection method for electron microscope, which is based on the base layer electroplating the electroplated layer according to the coating time, and the detection light with the first illuminance value is irradiated from above the electroplated layer , After passing through the electroplating layer and the base layer in sequence, a contrast light is formed, and then the contrast light is received to obtain a second illuminance value of the contrast light, and finally the electroplating is calculated according to the first and second illuminance values The thickness of the layer and the correction of the coating time. These steps are used to detect the thickness of the electroplated layer, and the coating time is corrected according to the thickness to achieve the best coating time, so as to solve the problem of electroplating the sample when using an electron microscope. The plating time of the layer is difficult to control, which leads to the problem of difficulty in thickness control.

Therefore, the present invention is really novel, progressive, and available for industrial use. It should meet the patent application requirements of my country's patent law. Undoubtedly, I filed an invention patent application in accordance with the law. I pray that the Bureau will grant the patent as soon as possible.

However, the foregoing is only an embodiment of the present invention, and is not used to limit the scope of implementation of the present invention. Therefore, all the equivalent changes and modifications of the shape, structure, characteristics and spirit described in the scope of the patent application of the present invention are mentioned. All should be included in the scope of the patent application of the present invention.

2 Electroplating device 3 Light source 4 Illuminance meter 10 Grassroots 20 Electroplating layer L1 Detection light L2 Control light T Thickness S02 Step S04 Step S06 Step S08 Step

Figure 1: It is a schematic diagram of the steps of an embodiment of the present invention; Figure 2: It is a schematic diagram of the electroplated layer of the embodiment of the present invention; Figure 3: It is a schematic diagram of the irradiation steps of the embodiment of the present invention; and Figure 4: It is a schematic diagram of the relationship between the illuminance and the coating time of the embodiment of the present invention.

S02 Step S04 Step S06 Step S08 Step

Claims (7)

A material detection method for electron microscopy, the steps include: Electroplating a base layer with an electroplating layer according to a coating time; A light source emits a detection light having a first illuminance value, and the detection light sequentially passes through the electroplating layer and the base layer to form a contrast light; Receiving the control light to obtain a second illuminance value of the control light; and According to the first illuminance value and the second illuminance value, a thickness of the electroplating layer is calculated and the coating time is corrected. The material detection method for electron microscope according to claim 1, wherein the base layer is a transparent member. The material detection method for electron microscope according to claim 1, wherein the material of the base layer is glass. The material detection method for electron microscope according to claim 1, wherein the material of the electroplating layer is noble metal. The material detection method for an electron microscope according to claim 1, wherein the first illuminance value of the detection light is 100,000 lux light. The material inspection method for electron microscope according to claim 1, wherein the second illuminance value of the control light is light of less than 100,000 lux. The material inspection method for electron microscope according to claim 1, wherein in the step of receiving the control light and obtaining a second illuminance value of the control light, the second illuminance of the control light is obtained by an illuminance meter value.

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