TWI745363B - Resin composition - Google Patents
Resin composition Download PDFInfo
- Publication number
- TWI745363B TWI745363B TW106109202A TW106109202A TWI745363B TW I745363 B TWI745363 B TW I745363B TW 106109202 A TW106109202 A TW 106109202A TW 106109202 A TW106109202 A TW 106109202A TW I745363 B TWI745363 B TW I745363B
- Authority
- TW
- Taiwan
- Prior art keywords
- resin
- resin composition
- mass
- epoxy resin
- component
- Prior art date
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 128
- 239000003822 epoxy resin Substances 0.000 claims abstract description 133
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 133
- 229920005989 resin Polymers 0.000 claims abstract description 104
- 239000011347 resin Substances 0.000 claims abstract description 104
- 239000004848 polyfunctional curative Substances 0.000 claims abstract description 36
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 18
- 239000002313 adhesive film Substances 0.000 claims description 41
- 239000011256 inorganic filler Substances 0.000 claims description 22
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 22
- 125000004432 carbon atom Chemical group C* 0.000 claims description 21
- 150000002148 esters Chemical class 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 18
- 125000000217 alkyl group Chemical group 0.000 claims description 17
- IANQTJSKSUMEQM-UHFFFAOYSA-N 1-benzofuran Chemical compound C1=CC=C2OC=CC2=C1 IANQTJSKSUMEQM-UHFFFAOYSA-N 0.000 claims description 14
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 claims description 14
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 12
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 5
- 150000002430 hydrocarbons Chemical group 0.000 claims description 5
- 125000004122 cyclic group Chemical group 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract description 25
- 239000010410 layer Substances 0.000 description 160
- -1 glycidyl ester Chemical class 0.000 description 48
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 34
- 238000000034 method Methods 0.000 description 34
- 239000000243 solution Substances 0.000 description 34
- 239000000758 substrate Substances 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 25
- 229920003986 novolac Polymers 0.000 description 25
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 24
- 238000001723 curing Methods 0.000 description 24
- 239000003795 chemical substances by application Substances 0.000 description 23
- 239000004020 conductor Substances 0.000 description 23
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 21
- 239000000047 product Substances 0.000 description 20
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 18
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 238000005259 measurement Methods 0.000 description 16
- 239000007787 solid Substances 0.000 description 16
- 239000000126 substance Substances 0.000 description 16
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 15
- 238000003475 lamination Methods 0.000 description 15
- 239000002966 varnish Substances 0.000 description 15
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 14
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 229920001721 polyimide Polymers 0.000 description 14
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 206010042674 Swelling Diseases 0.000 description 13
- 239000011889 copper foil Substances 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- 230000008961 swelling Effects 0.000 description 13
- 229920002554 vinyl polymer Polymers 0.000 description 13
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 229920006287 phenoxy resin Polymers 0.000 description 11
- 239000013034 phenoxy resin Substances 0.000 description 11
- 229920005992 thermoplastic resin Polymers 0.000 description 11
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 239000004642 Polyimide Substances 0.000 description 9
- 239000004643 cyanate ester Substances 0.000 description 9
- 238000001035 drying Methods 0.000 description 9
- 239000003063 flame retardant Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 9
- 235000013824 polyphenols Nutrition 0.000 description 9
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 8
- 239000000654 additive Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 125000003700 epoxy group Chemical group 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 125000001424 substituent group Chemical group 0.000 description 8
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 239000004793 Polystyrene Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 239000004305 biphenyl Substances 0.000 description 7
- 235000010290 biphenyl Nutrition 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000011888 foil Substances 0.000 description 7
- 238000005227 gel permeation chromatography Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000007800 oxidant agent Substances 0.000 description 7
- 229920002223 polystyrene Polymers 0.000 description 7
- 238000007788 roughening Methods 0.000 description 7
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 6
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 229910000831 Steel Inorganic materials 0.000 description 6
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 6
- ZMSZLDBJHSORJY-UHFFFAOYSA-N manganese;propan-2-one Chemical compound [Mn].CC(C)=O ZMSZLDBJHSORJY-UHFFFAOYSA-N 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 238000006386 neutralization reaction Methods 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 238000003825 pressing Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000010959 steel Substances 0.000 description 6
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 5
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 5
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 239000011354 acetal resin Substances 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 229930003836 cresol Natural products 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000012766 organic filler Substances 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 239000009719 polyimide resin Substances 0.000 description 5
- 229920006324 polyoxymethylene Polymers 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- HGBOYTHUEUWSSQ-UHFFFAOYSA-N valeric aldehyde Natural products CCCCC=O HGBOYTHUEUWSSQ-UHFFFAOYSA-N 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 4
- XKZQKPRCPNGNFR-UHFFFAOYSA-N 2-(3-hydroxyphenyl)phenol Chemical group OC1=CC=CC(C=2C(=CC=CC=2)O)=C1 XKZQKPRCPNGNFR-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 4
- 239000011362 coarse particle Substances 0.000 description 4
- 238000013329 compounding Methods 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 238000009499 grossing Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 125000001624 naphthyl group Chemical group 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000012756 surface treatment agent Substances 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- KGSFMPRFQVLGTJ-UHFFFAOYSA-N 1,1,2-triphenylethylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(C=1C=CC=CC=1)CC1=CC=CC=C1 KGSFMPRFQVLGTJ-UHFFFAOYSA-N 0.000 description 3
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 3
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 3
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 229920000180 alkyd Polymers 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N butadiene group Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 3
- 150000001718 carbodiimides Chemical class 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 150000001451 organic peroxides Chemical class 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920000570 polyether Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
- SSUJUUNLZQVZMO-UHFFFAOYSA-N 1,2,3,4,8,9,10,10a-octahydropyrimido[1,2-a]azepine Chemical compound C1CCC=CN2CCCNC21 SSUJUUNLZQVZMO-UHFFFAOYSA-N 0.000 description 2
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 description 2
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 2
- OEBXWWBYZJNKRK-UHFFFAOYSA-N 1-methyl-2,3,4,6,7,8-hexahydropyrimido[1,2-a]pyrimidine Chemical compound C1CCN=C2N(C)CCCN21 OEBXWWBYZJNKRK-UHFFFAOYSA-N 0.000 description 2
- LARNQUAWIRVQPK-UHFFFAOYSA-N 2-methyloxiran-2-amine Chemical compound NC1(CO1)C LARNQUAWIRVQPK-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- CMLFRMDBDNHMRA-UHFFFAOYSA-N 2h-1,2-benzoxazine Chemical compound C1=CC=C2C=CNOC2=C1 CMLFRMDBDNHMRA-UHFFFAOYSA-N 0.000 description 2
- FVKFHMNJTHKMRX-UHFFFAOYSA-N 3,4,6,7,8,9-hexahydro-2H-pyrimido[1,2-a]pyrimidine Chemical compound C1CCN2CCCNC2=N1 FVKFHMNJTHKMRX-UHFFFAOYSA-N 0.000 description 2
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- 229940123208 Biguanide Drugs 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 229920002284 Cellulose triacetate Polymers 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
- AHZMUXQJTGRNHT-UHFFFAOYSA-N [4-[2-(4-cyanatophenyl)propan-2-yl]phenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1C(C)(C)C1=CC=C(OC#N)C=C1 AHZMUXQJTGRNHT-UHFFFAOYSA-N 0.000 description 2
- 125000004450 alkenylene group Chemical group 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 125000004419 alkynylene group Chemical group 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 125000000499 benzofuranyl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 description 2
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000788 chromium alloy Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- WXNKCDDCJOBQEE-UHFFFAOYSA-N cobalt;propan-2-one Chemical compound [Co].CC(C)=O WXNKCDDCJOBQEE-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- DEKLIKGLDMCMJG-UHFFFAOYSA-M decanoate;tetrabutylphosphanium Chemical compound CCCCCCCCCC([O-])=O.CCCC[P+](CCCC)(CCCC)CCCC DEKLIKGLDMCMJG-UHFFFAOYSA-M 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000004845 glycidylamine epoxy resin Substances 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920005672 polyolefin resin Polymers 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 239000012286 potassium permanganate Substances 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- ODLMAHJVESYWTB-UHFFFAOYSA-N propylbenzene Chemical compound CCCC1=CC=CC=C1 ODLMAHJVESYWTB-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 2
- DEQUKPCANKRTPZ-UHFFFAOYSA-N (2,3-dihydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1O DEQUKPCANKRTPZ-UHFFFAOYSA-N 0.000 description 1
- NSEZUSFKACELMB-UHFFFAOYSA-N (2,6-dimethylphenyl) cyanate Chemical compound CC1=CC=CC(C)=C1OC#N NSEZUSFKACELMB-UHFFFAOYSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- SDUWQMDIQSWWIE-UHFFFAOYSA-N (3-cyanato-5-methylidenecyclohexa-1,3-dien-1-yl) cyanate Chemical compound C=C1CC(OC#N)=CC(OC#N)=C1 SDUWQMDIQSWWIE-UHFFFAOYSA-N 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- ISNICOKBNZOJQG-UHFFFAOYSA-N 1,1,2,3,3-pentamethylguanidine Chemical compound CN=C(N(C)C)N(C)C ISNICOKBNZOJQG-UHFFFAOYSA-N 0.000 description 1
- MEBONNVPKOBPEA-UHFFFAOYSA-N 1,1,2-trimethylcyclohexane Chemical group CC1CCCCC1(C)C MEBONNVPKOBPEA-UHFFFAOYSA-N 0.000 description 1
- NQOFYFRKWDXGJP-UHFFFAOYSA-N 1,1,2-trimethylguanidine Chemical compound CN=C(N)N(C)C NQOFYFRKWDXGJP-UHFFFAOYSA-N 0.000 description 1
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 description 1
- LINDOXZENKYESA-UHFFFAOYSA-N 1,2-dimethylguanidine Chemical compound CNC(N)=NC LINDOXZENKYESA-UHFFFAOYSA-N 0.000 description 1
- OWRCNXZUPFZXOS-UHFFFAOYSA-N 1,3-diphenylguanidine Chemical compound C=1C=CC=CC=1NC(=N)NC1=CC=CC=C1 OWRCNXZUPFZXOS-UHFFFAOYSA-N 0.000 description 1
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-dioxonaphthalene Natural products C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 1
- BOKGTLAJQHTOKE-UHFFFAOYSA-N 1,5-dihydroxynaphthalene Chemical compound C1=CC=C2C(O)=CC=CC2=C1O BOKGTLAJQHTOKE-UHFFFAOYSA-N 0.000 description 1
- UICXTANXZJJIBC-UHFFFAOYSA-N 1-(1-hydroperoxycyclohexyl)peroxycyclohexan-1-ol Chemical compound C1CCCCC1(O)OOC1(OO)CCCCC1 UICXTANXZJJIBC-UHFFFAOYSA-N 0.000 description 1
- SQZCAOHYQSOZCE-UHFFFAOYSA-N 1-(diaminomethylidene)-2-(2-methylphenyl)guanidine Chemical compound CC1=CC=CC=C1N=C(N)N=C(N)N SQZCAOHYQSOZCE-UHFFFAOYSA-N 0.000 description 1
- JLPWQEHTPOFCPG-UHFFFAOYSA-N 1-(diaminomethylidene)-2-methylguanidine Chemical compound CN=C(N)N=C(N)N JLPWQEHTPOFCPG-UHFFFAOYSA-N 0.000 description 1
- UBJPWXQSHUPNPG-UHFFFAOYSA-N 1-(diaminomethylidene)-2-prop-2-enylguanidine Chemical compound NC(N)=NC(N)=NCC=C UBJPWXQSHUPNPG-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- PBODPHKDNYVCEJ-UHFFFAOYSA-M 1-benzyl-3-dodecyl-2-methylimidazol-1-ium;chloride Chemical compound [Cl-].CCCCCCCCCCCCN1C=C[N+](CC=2C=CC=CC=2)=C1C PBODPHKDNYVCEJ-UHFFFAOYSA-M 0.000 description 1
- ARNKHYQYAZLEEP-UHFFFAOYSA-N 1-naphthalen-1-yloxynaphthalene Chemical compound C1=CC=C2C(OC=3C4=CC=CC=C4C=CC=3)=CC=CC2=C1 ARNKHYQYAZLEEP-UHFFFAOYSA-N 0.000 description 1
- POKQSIIVDYPSBI-UHFFFAOYSA-N 1-propyl-7-oxabicyclo[2.2.1]heptane Chemical compound C(CC)C12CCC(CC1)O2 POKQSIIVDYPSBI-UHFFFAOYSA-N 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- RUFZNDNBXKOZQV-UHFFFAOYSA-N 2,3-dihydro-1h-pyrrolo[1,2-a]benzimidazole Chemical compound C1=CC=C2N(CCC3)C3=NC2=C1 RUFZNDNBXKOZQV-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- VVFVRTNNLLZXAL-UHFFFAOYSA-N 2-(2-methylphenyl)guanidine Chemical compound CC1=CC=CC=C1N=C(N)N VVFVRTNNLLZXAL-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- DJOYTAUERRJRAT-UHFFFAOYSA-N 2-(n-methyl-4-nitroanilino)acetonitrile Chemical compound N#CCN(C)C1=CC=C([N+]([O-])=O)C=C1 DJOYTAUERRJRAT-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- USGCMNLQYSXCDU-UHFFFAOYSA-N 2-cyclohexyl-1-(diaminomethylidene)guanidine Chemical compound NC(N)=NC(N)=NC1CCCCC1 USGCMNLQYSXCDU-UHFFFAOYSA-N 0.000 description 1
- AJGAPBXTFUSKNJ-UHFFFAOYSA-N 2-cyclohexylguanidine Chemical compound NC(=N)NC1CCCCC1 AJGAPBXTFUSKNJ-UHFFFAOYSA-N 0.000 description 1
- KRDXTHSSNCTAGY-UHFFFAOYSA-N 2-cyclohexylpyrrolidine Chemical compound C1CCNC1C1CCCCC1 KRDXTHSSNCTAGY-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- KEWLVUBYGUZFKX-UHFFFAOYSA-N 2-ethylguanidine Chemical compound CCNC(N)=N KEWLVUBYGUZFKX-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- VWSLLSXLURJCDF-UHFFFAOYSA-N 2-methyl-4,5-dihydro-1h-imidazole Chemical compound CC1=NCCN1 VWSLLSXLURJCDF-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- RJIQELZAIWFNTQ-UHFFFAOYSA-N 2-phenyl-1h-imidazole;1,3,5-triazinane-2,4,6-trione Chemical compound O=C1NC(=O)NC(=O)N1.C1=CNC(C=2C=CC=CC=2)=N1 RJIQELZAIWFNTQ-UHFFFAOYSA-N 0.000 description 1
- BKCCAYLNRIRKDJ-UHFFFAOYSA-N 2-phenyl-4,5-dihydro-1h-imidazole Chemical compound N1CCN=C1C1=CC=CC=C1 BKCCAYLNRIRKDJ-UHFFFAOYSA-N 0.000 description 1
- QRJZGVVKGFIGLI-UHFFFAOYSA-N 2-phenylguanidine Chemical compound NC(=N)NC1=CC=CC=C1 QRJZGVVKGFIGLI-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- UIDDPPKZYZTEGS-UHFFFAOYSA-N 3-(2-ethyl-4-methylimidazol-1-yl)propanenitrile Chemical compound CCC1=NC(C)=CN1CCC#N UIDDPPKZYZTEGS-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- ATVJXMYDOSMEPO-UHFFFAOYSA-N 3-prop-2-enoxyprop-1-ene Chemical compound C=CCOCC=C ATVJXMYDOSMEPO-UHFFFAOYSA-N 0.000 description 1
- JIGUICYYOYEXFS-UHFFFAOYSA-N 3-tert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC=CC(O)=C1O JIGUICYYOYEXFS-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- ZNBNBTIDJSKEAM-UHFFFAOYSA-N 4-[7-hydroxy-2-[5-[5-[6-hydroxy-6-(hydroxymethyl)-3,5-dimethyloxan-2-yl]-3-methyloxolan-2-yl]-5-methyloxolan-2-yl]-2,8-dimethyl-1,10-dioxaspiro[4.5]decan-9-yl]-2-methyl-3-propanoyloxypentanoic acid Chemical compound C1C(O)C(C)C(C(C)C(OC(=O)CC)C(C)C(O)=O)OC11OC(C)(C2OC(C)(CC2)C2C(CC(O2)C2C(CC(C)C(O)(CO)O2)C)C)CC1 ZNBNBTIDJSKEAM-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- 108010054404 Adenylyl-sulfate kinase Proteins 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- ILGQZYDFLLRTRP-UHFFFAOYSA-L C1(CCCC2CCCCC12)C(=O)[O-].[Co+2].C1(CCCC2CCCCC12)C(=O)[O-] Chemical compound C1(CCCC2CCCCC12)C(=O)[O-].[Co+2].C1(CCCC2CCCCC12)C(=O)[O-] ILGQZYDFLLRTRP-UHFFFAOYSA-L 0.000 description 1
- VTRZCQKYMCGYBV-UHFFFAOYSA-L C1(CCCC2CCCCC12)C(=O)[O-].[Zn+2].C1(CCCC2CCCCC12)C(=O)[O-] Chemical compound C1(CCCC2CCCCC12)C(=O)[O-].[Zn+2].C1(CCCC2CCCCC12)C(=O)[O-] VTRZCQKYMCGYBV-UHFFFAOYSA-L 0.000 description 1
- 208000032544 Cicatrix Diseases 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- 229920002121 Hydroxyl-terminated polybutadiene Polymers 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- JPYHHZQJCSQRJY-UHFFFAOYSA-N Phloroglucinol Natural products CCC=CCC=CCC=CCC=CCCCCC(=O)C1=C(O)C=C(O)C=C1O JPYHHZQJCSQRJY-UHFFFAOYSA-N 0.000 description 1
- 101100410148 Pinus taeda PT30 gene Proteins 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 102100039024 Sphingosine kinase 1 Human genes 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- ORLQHILJRHBSAY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1(CO)CCCCC1 ORLQHILJRHBSAY-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- INHGSGHLQLYYND-UHFFFAOYSA-N [4-[2-(4-cyanatophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(OC#N)C=C1 INHGSGHLQLYYND-UHFFFAOYSA-N 0.000 description 1
- UHCNCKOCZQCYRV-UHFFFAOYSA-N [4-[2-(4-cyanatophenyl)ethyl]phenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1CCC1=CC=C(OC#N)C=C1 UHCNCKOCZQCYRV-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical group C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- RRZKHZBOZDIQJG-UHFFFAOYSA-N azane;manganese Chemical compound N.[Mn] RRZKHZBOZDIQJG-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- XWUPANOEJRYEPL-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+);zirconium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Ba+2] XWUPANOEJRYEPL-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- XSEUMFJMFFMCIU-UHFFFAOYSA-N buformin Chemical compound CCCC\N=C(/N)N=C(N)N XSEUMFJMFFMCIU-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000005569 butenylene group Chemical group 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- DAQREMPZDNTSMS-UHFFFAOYSA-M butyl(triphenyl)phosphanium;thiocyanate Chemical compound [S-]C#N.C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCC)C1=CC=CC=C1 DAQREMPZDNTSMS-UHFFFAOYSA-M 0.000 description 1
- DLIJPAHLBJIQHE-UHFFFAOYSA-N butylphosphane Chemical compound CCCCP DLIJPAHLBJIQHE-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 150000001869 cobalt compounds Chemical class 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- GEBVYLHOCNKBAH-UHFFFAOYSA-N copper;propan-2-one Chemical compound [Cu].CC(C)=O GEBVYLHOCNKBAH-UHFFFAOYSA-N 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- SPTHWAJJMLCAQF-UHFFFAOYSA-M ctk4f8481 Chemical compound [O-]O.CC(C)C1=CC=CC=C1C(C)C SPTHWAJJMLCAQF-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 150000001913 cyanates Chemical class 0.000 description 1
- VEIOBOXBGYWJIT-UHFFFAOYSA-N cyclohexane;methanol Chemical compound OC.OC.C1CCCCC1 VEIOBOXBGYWJIT-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- 229910001648 diaspore Inorganic materials 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- OJLGWNFZMTVNCX-UHFFFAOYSA-N dioxido(dioxo)tungsten;zirconium(4+) Chemical compound [Zr+4].[O-][W]([O-])(=O)=O.[O-][W]([O-])(=O)=O OJLGWNFZMTVNCX-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 125000005677 ethinylene group Chemical group [*:2]C#C[*:1] 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 150000002440 hydroxy compounds Chemical class 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 229910000378 hydroxylammonium sulfate Inorganic materials 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 125000003454 indenyl group Chemical group C1(C=CC2=CC=CC=C12)* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- RTQMYJXQIDQHMH-UHFFFAOYSA-N iron;propan-2-one Chemical compound [Fe].CC(C)=O RTQMYJXQIDQHMH-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 150000002696 manganese Chemical class 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 239000002365 multiple layer Chemical group 0.000 description 1
- DXASQZJWWGZNSF-UHFFFAOYSA-N n,n-dimethylmethanamine;sulfur trioxide Chemical group CN(C)C.O=S(=O)=O DXASQZJWWGZNSF-UHFFFAOYSA-N 0.000 description 1
- FZZQNEVOYIYFPF-UHFFFAOYSA-N naphthalene-1,6-diol Chemical compound OC1=CC=CC2=CC(O)=CC=C21 FZZQNEVOYIYFPF-UHFFFAOYSA-N 0.000 description 1
- MNZMMCVIXORAQL-UHFFFAOYSA-N naphthalene-2,6-diol Chemical compound C1=C(O)C=CC2=CC(O)=CC=C21 MNZMMCVIXORAQL-UHFFFAOYSA-N 0.000 description 1
- 150000004780 naphthols Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- LHJARSDQUNCSJG-UHFFFAOYSA-N nickel;propan-2-one Chemical compound [Ni].CC(C)=O LHJARSDQUNCSJG-UHFFFAOYSA-N 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 description 1
- JFOJYGMDZRCSPA-UHFFFAOYSA-J octadecanoate;tin(4+) Chemical compound [Sn+4].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O JFOJYGMDZRCSPA-UHFFFAOYSA-J 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 125000001477 organic nitrogen group Chemical group 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- CUQCMXFWIMOWRP-UHFFFAOYSA-N phenyl biguanide Chemical compound NC(N)=NC(N)=NC1=CC=CC=C1 CUQCMXFWIMOWRP-UHFFFAOYSA-N 0.000 description 1
- LYKRPDCJKSXAHS-UHFFFAOYSA-N phenyl-(2,3,4,5-tetrahydroxyphenyl)methanone Chemical compound OC1=C(O)C(O)=CC(C(=O)C=2C=CC=CC=2)=C1O LYKRPDCJKSXAHS-UHFFFAOYSA-N 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
- 229960001553 phloroglucinol Drugs 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- BAOGIWGDRNSXGA-UHFFFAOYSA-N propan-2-one;zinc Chemical compound [Zn].CC(C)=O BAOGIWGDRNSXGA-UHFFFAOYSA-N 0.000 description 1
- 125000006410 propenylene group Chemical group 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 230000037387 scars Effects 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 125000002298 terpene group Chemical group 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- GHPYAGKTTCKKDF-UHFFFAOYSA-M tetraphenylphosphanium;thiocyanate Chemical compound [S-]C#N.C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 GHPYAGKTTCKKDF-UHFFFAOYSA-M 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical class SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 1
- KSBAEPSJVUENNK-UHFFFAOYSA-L tin(ii) 2-ethylhexanoate Chemical compound [Sn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O KSBAEPSJVUENNK-UHFFFAOYSA-L 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L45/00—Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system; Compositions of derivatives of such polymers
- C08L45/02—Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system; Compositions of derivatives of such polymers of coumarone-indene polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Adhesive Tapes (AREA)
Abstract
本發明係提供可帶來介電正切(Dielectric tangent)低,且鍍敷密著性及底層密著性優異之絕緣層之相溶性、熔融黏度良好的樹脂組成物等。 The present invention provides a resin composition that can bring about low dielectric tangent, and excellent compatibility and melt viscosity of an insulating layer with plating adhesion and underlayer adhesion.
本發明之樹脂組成物,其係包含(A)環氧樹脂、(B)硬化劑、(C)具有乙烯基之樹脂、及(D)茚香豆酮樹脂的樹脂組成物,其中(D)成分之含量係樹脂成分為100質量%時,為5質量%~20質量%。 The resin composition of the present invention is a resin composition containing (A) epoxy resin, (B) hardener, (C) resin having a vinyl group, and (D) indencoumarone resin, wherein (D) The content of the component is 5 to 20% by mass when the resin component is 100% by mass.
Description
本發明係有關樹脂組成物。更詳細係有關接著薄膜、印刷電路板、及半導體裝置。 The present invention relates to a resin composition. More details are related to adhesive films, printed circuit boards, and semiconductor devices.
印刷電路板之製造技術係藉由在內層基板上,絕緣層與導體層交互重疊之增層方式的製造方法已為人知。絕緣層一般係藉由使樹脂組成物硬化而形成。例如,專利文獻1記載含有特定之環氧樹脂與硬化劑,且低介電性、高耐熱性的樹脂組成物。 The manufacturing technology of the printed circuit board is a manufacturing method in which the insulating layer and the conductor layer are alternately overlapped on the inner substrate. The insulating layer is generally formed by curing the resin composition. For example, Patent Document 1 describes a resin composition containing a specific epoxy resin and a curing agent, and having low dielectric properties and high heat resistance.
[專利文獻1]日本特開2015-57465號公報 [Patent Document 1] JP 2015-57465 A
近年,電子機器之小型化、高性能化進展,多層印刷電路板係增層式層複層化,而要求配線之微細化及高密度化。為了達成配線更微細化及高密度化時,而要 求帶來介電正切低,且鍍敷密著性及底層密著性優異之絕緣層之相溶性、熔融黏度良好的樹脂組成物,但是目前狀況係仍未到達滿足此等所有特性。 In recent years, the miniaturization and high performance of electronic devices have progressed. Multilayer printed circuit boards have been multi-layered, requiring miniaturization and high-density wiring. In order to achieve finer and higher-density wiring, it is necessary to A resin composition with a low dielectric tangent, excellent plating adhesion and underlayer adhesion, compatibility of the insulating layer, and good melt viscosity is required, but the current situation has not yet reached all these characteristics.
本發明之課題係提供可帶來介電正切低,且鍍敷密著性及底層密著性優異之絕緣層之相溶性、熔融黏度良好的樹脂組成物。 The subject of the present invention is to provide a resin composition that can bring about a low dielectric tangent, and excellent compatibility and melt viscosity of the insulating layer for plating adhesion and underlayer adhesion.
本發明人等對於上述課題,精心檢討的結果,發現藉由組合使用具有乙烯基之樹脂與特定量之茚香豆酮樹脂,可解決上述課題,而完成本發明。 As a result of careful examination of the above-mentioned problems, the inventors found that the above-mentioned problems can be solved by using a resin having a vinyl group in combination with a specific amount of indocumarone resin and completed the present invention.
即,本發明包含以下的內容。 That is, the present invention includes the following contents.
[1]一種樹脂組成物,其係包含(A)環氧樹脂、(B)硬化劑、(C)具有乙烯基之樹脂、及(D)茚香豆酮樹脂的樹脂組成物,其中(D)成分之含量係樹脂成分為100質量%時,為5質量%~20質量%。 [1] A resin composition comprising (A) an epoxy resin, (B) a hardener, (C) a resin having a vinyl group, and (D) an indencoumarone resin, wherein (D) ) The content of the component is 5 to 20% by mass when the resin component is 100% by mass.
[2][1]之樹脂組成物,其中(C)成分之至少1種具有芳香環。 [2] The resin composition of [1], wherein at least one of the component (C) has an aromatic ring.
[3][1]或[2]之樹脂組成物,其中(C)成分之含量係樹脂成分為100質量%時,為5質量%~20質量%。 [3] The resin composition of [1] or [2], wherein the content of component (C) is 5% by mass to 20% by mass when the resin component is 100% by mass.
[4][1]~[3]中任一項之樹脂組成物,其中(B)成分之至少1種為活性酯系硬化劑。 [4] The resin composition of any one of [1] to [3], wherein at least one of the component (B) is an active ester hardener.
[5][1]~[4]中任一項之樹脂組成物,其係進一步包含 (E)無機填充材。 [5] The resin composition of any one of [1] to [4], which further comprises (E) Inorganic filler.
[6][5]之樹脂組成物,其中(E)成分之含量係樹脂組成物之不揮發成分為100質量%時,為50質量%以上。 [6] The resin composition of [5], wherein the content of the component (E) is 50% by mass or more when the non-volatile content of the resin composition is 100% by mass.
[7][1]~[6]中任一項之樹脂組成物,其中(D)成分為茚、香豆酮、及苯乙烯之共聚物。 [7] The resin composition of any one of [1] to [6], wherein the component (D) is a copolymer of indene, coumarone, and styrene.
[8][1]~[7]中任一項之樹脂組成物,其係印刷電路板之絕緣層形成用。 [8] The resin composition of any one of [1] to [7], which is used for forming the insulating layer of a printed circuit board.
[9]一種接著薄膜,其係具有支撐體及設置於該支撐體上之含有[1]~[8]中任一項之樹脂組成物的樹脂組成物層。 [9] An adhesive film having a support and a resin composition layer containing the resin composition of any one of [1] to [8] provided on the support.
[10]一種印刷電路板,其係包含藉由[1]~[8]中任一項之樹脂組成物之硬化物所形成的絕緣層。 [10] A printed circuit board comprising an insulating layer formed by a cured product of the resin composition of any one of [1] to [8].
[11]一種半導體裝置,其係具備[10]之印刷電路板。 [11] A semiconductor device comprising the printed circuit board of [10].
依據本發明時,可提供帶來介電正切低,且鍍敷密著性及底層密著性優異之絕緣層之相溶性、熔融黏度良好的樹脂組成物。 According to the present invention, it is possible to provide a resin composition with a low dielectric tangent and excellent compatibility and melt viscosity of the insulating layer with excellent plating adhesion and underlayer adhesion.
以下詳細說明本發明之樹脂組成物、接著薄膜、印刷電路板、及半導體裝置。 Hereinafter, the resin composition, adhesive film, printed circuit board, and semiconductor device of the present invention will be described in detail.
本發明之樹脂組成物係包含(A)環氧樹脂、(B)硬化劑、(C)具有乙烯基之樹脂、及(D)茚香豆酮樹脂,其中(D)成分之含量係樹脂成分為100質量%時,為5質量%~20質量%。又,本發明中,「樹脂成分」係指構成樹脂組成物之不揮發成分之中,除去後述之(E)無機填充材後的成分。以下詳細說明本發明之樹脂組成物中所含之各成分。 The resin composition of the present invention includes (A) epoxy resin, (B) hardener, (C) resin with vinyl group, and (D) indencoumarone resin, wherein the content of (D) component is the resin component When it is 100% by mass, it is 5% by mass to 20% by mass. In addition, in the present invention, the "resin component" refers to the non-volatile components constituting the resin composition, except for the following (E) inorganic filler. Hereinafter, each component contained in the resin composition of the present invention will be explained in detail.
本發明之樹脂組成物含有(A)環氧樹脂。環氧樹脂可列舉例如雙二甲苯酚型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、雙酚AF型環氧樹脂、二環戊二烯型環氧樹脂、三苯酚型環氧樹脂、萘酚酚醛清漆型環氧樹脂、苯酚酚醛清漆型環氧樹脂、tert-丁基-兒茶酚型環氧樹脂、萘型環氧樹脂、萘酚型環氧樹脂、蒽型環氧樹脂、環氧丙基胺型環氧樹脂、環氧丙基酯型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、線狀脂肪族環氧樹脂、具有丁二烯結構之環氧樹脂、脂環式環氧樹脂、雜環式環氧樹脂、含有螺環之環氧樹脂、環己烷二甲醇型環氧樹脂、伸萘醚型環氧樹脂、三羥甲基型環氧樹脂、四苯基乙烷型環氧樹脂等。環氧樹脂可單獨使用1種或組合2種以上使用。(A)成分從降低平均線熱膨脹率的觀點,較佳為含有芳香族骨架之環氧樹脂,更佳為選自雙酚A型環氧樹脂、雙酚F型環氧樹脂、萘型環氧樹脂、聯苯型環氧樹脂、及二環戊二烯型環氧樹脂之1種以 上,又更佳為聯苯型環氧樹脂。芳香族骨架係指一般定義為芳香族的化學結構,包含多環芳香族及芳香族雜環。 The resin composition of the present invention contains (A) epoxy resin. Examples of the epoxy resin include bisxylenol type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, and dicyclopentane Diene type epoxy resin, triphenol type epoxy resin, naphthol novolak type epoxy resin, phenol novolak type epoxy resin, tert-butyl-catechol type epoxy resin, naphthalene type epoxy resin, Naphthol type epoxy resin, anthracene type epoxy resin, glycidyl amine type epoxy resin, glycidyl ester type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin, thread Aliphatic epoxy resin, epoxy resin with butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, epoxy resin containing spiro ring, cyclohexane dimethanol type epoxy resin, Naphthyl ether type epoxy resin, trimethylol type epoxy resin, tetraphenylethane type epoxy resin, etc. The epoxy resin can be used individually by 1 type or in combination of 2 or more types. (A) From the viewpoint of reducing the average linear thermal expansion rate, the component is preferably an epoxy resin containing an aromatic skeleton, and more preferably selected from the group consisting of bisphenol A epoxy resin, bisphenol F epoxy resin, and naphthalene epoxy resin. 1 type of resin, biphenyl type epoxy resin, and dicyclopentadiene type epoxy resin Above, it is more preferably a biphenyl type epoxy resin. Aromatic skeleton refers to a chemical structure generally defined as aromatic, including polycyclic aromatics and aromatic heterocycles.
環氧樹脂係具有1分子中具有2個以上之環氧基的環氧樹脂為佳。環氧樹脂之不揮發成分為100質量%的情形時,至少50質量%以上係1分子中具有2個以上之環氧基的環氧樹脂為佳。其中,包含1分子中具有3個以上之環氧基,溫度20℃下為固體狀之環氧樹脂(以下稱為「固體狀環氧樹脂」)為佳。環氧樹脂可僅含有固體狀環氧樹脂,也可含有1分子中具有2個以上之環氧基,溫度20℃下為液狀的環氧樹脂(以下稱為「液狀環氧樹脂」)與固體狀環氧樹脂。藉由併用液狀環氧樹脂與固體狀環氧樹脂作為環氧樹脂,可得到具有優異可撓性的樹脂組成物。又,也可提高樹脂組成物之硬化物的斷裂強度。 The epoxy resin is preferably an epoxy resin having two or more epoxy groups in one molecule. When the non-volatile content of the epoxy resin is 100% by mass, at least 50% by mass or more is preferably an epoxy resin having two or more epoxy groups in one molecule. Among them, it is preferable to include an epoxy resin having 3 or more epoxy groups in one molecule and being solid at a temperature of 20°C (hereinafter referred to as "solid epoxy resin"). The epoxy resin may contain only a solid epoxy resin, or an epoxy resin that has two or more epoxy groups per molecule and is liquid at a temperature of 20°C (hereinafter referred to as "liquid epoxy resin") With solid epoxy resin. By using a liquid epoxy resin and a solid epoxy resin as the epoxy resin, a resin composition having excellent flexibility can be obtained. In addition, the breaking strength of the cured product of the resin composition can also be improved.
液狀環氧樹脂較佳為雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AF型環氧樹脂、萘型環氧樹脂、環氧丙基酯型環氧樹脂、環氧丙基胺型環氧樹脂、苯酚酚醛清漆型環氧樹脂、具有酯骨架之脂環式環氧樹脂、環己烷二甲醇型環氧樹脂、環氧丙基胺型環氧樹脂、及具有丁二烯結構之環氧樹脂,更佳為環氧丙基胺型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AF型環氧樹脂及萘型環氧樹脂。液狀環氧樹脂之具體例,可列舉DIC(股)製之「HP4032」、「HP4032D」、「HP4032SS」(萘型環氧樹脂)、三菱化學(股)製之「828US」、「jER828EL」、「825」、「Epikote828EL」(雙酚A型環 氧樹脂)、「jER807」、「1750」(雙酚F型環氧樹脂)、「jER152」(苯酚酚醛清漆型環氧樹脂)、「630」、「630LSD」(環氧丙基胺型環氧樹脂)、新日鐵住金化學(股)製之「ZX1059」(雙酚A型環氧樹脂與雙酚F型環氧樹脂之混合品)、nagasechemtex(股)製之「EX-721」(環氧丙基酯型環氧樹脂)、(股)DAICEL製之「CELLOXID2021P」(具有酯骨架之脂環式環氧樹脂)、「PB-3600」(具有丁二烯結構之環氧樹脂)、新日鐵化學(股)製之「ZX1658」、「ZX1658GS」(液狀1,4-環氧丙基環己烷)、三菱化學(股)製之「630LSD」(環氧丙基胺型環氧樹脂)等。此等可1種單獨使用或組合2種以上使用。 The liquid epoxy resin is preferably bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin, naphthalene type epoxy resin, glycidyl ester type epoxy resin, and epoxy resin. Propylamine type epoxy resin, phenol novolac type epoxy resin, alicyclic epoxy resin with ester skeleton, cyclohexanedimethanol type epoxy resin, epoxypropylamine type epoxy resin, and epoxy resin with butyl Diene structure epoxy resin, more preferably epoxy propyl amine type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin and naphthalene type epoxy resin . Specific examples of liquid epoxy resins include "HP4032", "HP4032D", "HP4032SS" (naphthalene type epoxy resin) manufactured by DIC Corporation, and "828US" and "jER828EL" manufactured by Mitsubishi Chemical Corporation. , "825", "Epikote828EL" (bisphenol A ring Oxygen resin), "jER807", "1750" (bisphenol F type epoxy resin), "jER152" (phenol novolak type epoxy resin), "630", "630LSD" (glycidylamine epoxy resin) Resin), "ZX1059" (a mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin) manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., and "EX-721" (ring Oxypropyl ester type epoxy resin), "CELLOXID2021P" (alicyclic epoxy resin with ester skeleton) made by DAICEL, "PB-3600" (epoxy resin with butadiene structure), new "ZX1658", "ZX1658GS" (liquid 1,4-epoxypropylcyclohexane) manufactured by Nippon Steel Chemical Co., Ltd., and "630LSD" (glycidylamine epoxy resin) manufactured by Mitsubishi Chemical Co., Ltd. Resin) and so on. These can be used individually by 1 type or in combination of 2 or more types.
固體狀環氧樹脂較佳為萘型4官能環氧樹脂、甲酚酚醛清漆型環氧樹脂、二環戊二烯型環氧樹脂、三苯酚型環氧樹脂、萘酚型環氧樹脂、聯苯型環氧樹脂、伸萘醚型環氧樹脂、蒽型環氧樹脂、雙酚A型環氧樹脂、四苯基乙烷型環氧樹脂,更佳為萘型4官能環氧樹脂、萘酚型環氧樹脂、及聯苯型環氧樹脂。固體狀環氧樹脂之具體例,可列舉DIC(股)製之「HP4032H」(萘型環氧樹脂)、「HP-4700」、「HP-4710」(萘型4官能環氧樹脂)、「N-690」(甲酚酚醛清漆型環氧樹脂)、「N-695」(甲酚酚醛清漆型環氧樹脂)、「HP-7200」(二環戊二烯型環氧樹脂)、「HP-7200HH」、「HP-7200H」、「EXA-7311」、「EXA-7311-G3」、「EXA-7311-G4」、「EXA-7311-G4S」、「HP6000」(伸萘醚型環氧樹脂)、日本化藥 (股)製之「EPPN-502H」(三苯酚型環氧樹脂)、「NC7000L」(萘酚酚醛清漆型環氧樹脂)、「NC3000H」、「NC3000」、「NC3000L」、「NC3100」(聯苯型環氧樹脂)、新日鐵住金化學(股)製之「ESN475V」(萘型環氧樹脂)、「ESN485」(萘酚酚醛清漆型環氧樹脂)、三菱化學(股)製之「YX4000H」、「YX4000」、「YL6121」(聯苯型環氧樹脂)、「YX4000HK」(雙二甲苯酚型環氧樹脂)、「YX8800」(蒽型環氧樹脂)、大阪氣體化學(股)製之「PG-100」、「CG-500」、三菱化學(股)製之「YL7760」(雙酚AF型環氧樹脂)、「YL7800」(茀型環氧樹脂)、三菱化學(股)製之「jER1010」(固體狀雙酚A型環氧樹脂)、「jER1031S」(四苯基乙烷型環氧樹脂)等。此等可1種單獨使用或組合2種以上使用。 The solid epoxy resin is preferably a naphthalene type tetrafunctional epoxy resin, a cresol novolac type epoxy resin, a dicyclopentadiene type epoxy resin, a triphenol type epoxy resin, a naphthol type epoxy resin, and a bicarbonate type epoxy resin. Benzene type epoxy resin, naphthylene ether type epoxy resin, anthracene type epoxy resin, bisphenol A type epoxy resin, tetraphenylethane type epoxy resin, more preferably naphthalene type tetrafunctional epoxy resin, naphthalene Phenolic epoxy resin and biphenyl epoxy resin. Specific examples of solid epoxy resins include "HP4032H" (naphthalene type epoxy resin), "HP-4700", "HP-4710" (naphthalene type tetrafunctional epoxy resin), and "HP4032H" manufactured by DIC Corporation. N-690" (cresol novolac type epoxy resin), "N-695" (cresol novolak type epoxy resin), "HP-7200" (dicyclopentadiene type epoxy resin), "HP -7200HH", "HP-7200H", "EXA-7311", "EXA-7311-G3", "EXA-7311-G4", "EXA-7311-G4S", "HP6000" (Naphthylene ether epoxy Resin), Nippon Kayaku (Stock) "EPPN-502H" (triphenol type epoxy resin), "NC7000L" (naphthol novolak type epoxy resin), "NC3000H", "NC3000", "NC3000L", "NC3100" (linked Benzene type epoxy resin), "ESN475V" (naphthalene type epoxy resin) manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., "ESN485" (naphthol novolak type epoxy resin), "ESN475V" (naphthol novolak type epoxy resin) manufactured by Mitsubishi Chemical Co., Ltd. "YX4000H", "YX4000", "YL6121" (biphenyl type epoxy resin), "YX4000HK" (bis-xylenol type epoxy resin), "YX8800" (anthracene type epoxy resin), Osaka Gas Chemical Co., Ltd. "PG-100", "CG-500" manufactured by Mitsubishi Chemical Corporation, "YL7760" (Bisphenol AF type epoxy resin) manufactured by Mitsubishi Chemical Corporation, "YL7800" (茀-type epoxy resin), Mitsubishi Chemical Corporation (stock) "JER1010" (solid bisphenol A epoxy resin), "jER1031S" (tetraphenylethane epoxy resin), etc. These can be used individually by 1 type or in combination of 2 or more types.
環氧樹脂為併用液狀環氧樹脂與固體狀環氧樹脂的情形,彼等之量比(液狀環氧樹脂:固體狀環氧樹脂)係以質量比表示,較佳為1:0.1~1:15之範圍。藉由將液狀環氧樹脂與固體狀環氧樹脂之量比設在此範圍,可得到i)在接著薄膜的形態使用時,可帶來適度的黏著性,ii)在接著薄膜的形態使用的情形,可得到充分的可撓性,提高操作性,及iii)可得到具有充分的斷裂強度的硬化物等的效果。自上述i)~iii)之效果的觀點,液狀環氧樹脂與固體狀環氧樹脂之量比(液狀環氧樹脂:固體狀環氧樹脂)係以質量比表示,更佳為1:0.5~1:10之範圍,又更 佳為1:1~1:8之範圍。 The epoxy resin is a case where a liquid epoxy resin and a solid epoxy resin are used together, and their quantity ratio (liquid epoxy resin: solid epoxy resin) is expressed in terms of mass ratio, preferably 1:0.1~ 1:15 range. By setting the ratio of the liquid epoxy resin to the solid epoxy resin in this range, it can be obtained i) when used in the form of adhesive film, it can bring moderate adhesion, ii) when used in the form of adhesive film In this case, sufficient flexibility can be obtained, and workability can be improved, and iii) a cured product with sufficient breaking strength can be obtained. From the viewpoint of the effects of i) to iii) above, the ratio of the amount of liquid epoxy resin to solid epoxy resin (liquid epoxy resin: solid epoxy resin) is expressed by mass ratio, and more preferably 1: 0.5~1: 10 range, and more Preferably, the range is 1:1~1:8.
樹脂組成物中之環氧樹脂之含量,從得到顯示良好的機械強度、絕緣信賴性之絕緣層的觀點,樹脂成分設為100質量%的情形,較佳為5質量%以上,更佳為10質量%以上,又更佳為20質量%以上。環氧樹脂之含量之上限,只要可發揮本發明效果的範圍內,無特別限定,較佳為60質量%以下,更佳為50質量%以下,又更佳為40質量%以下。 The content of the epoxy resin in the resin composition, from the viewpoint of obtaining an insulating layer showing good mechanical strength and insulation reliability, when the resin component is set to 100% by mass, it is preferably 5% by mass or more, and more preferably 10 Mass% or more, and more preferably 20 mass% or more. The upper limit of the content of the epoxy resin is not particularly limited as long as the effect of the present invention can be exhibited. It is preferably 60% by mass or less, more preferably 50% by mass or less, and still more preferably 40% by mass or less.
環氧樹脂之環氧當量,較佳為50~5000,更佳為50~3000,又更佳為80~2000,又更佳為110~1000。藉由在此範圍內,可帶來硬化物之交聯密度充分,表面粗糙度小的絕緣層。又,環氧當量可依據JIS K7236測量,為含有1當量之環氧基之樹脂的質量。 The epoxy equivalent of the epoxy resin is preferably 50 to 5000, more preferably 50 to 3000, more preferably 80 to 2000, and still more preferably 110 to 1000. By being within this range, the crosslinking density of the cured product is sufficient and the surface roughness of the insulating layer is small. In addition, the epoxy equivalent can be measured in accordance with JIS K7236 and is the mass of the resin containing 1 equivalent of epoxy groups.
環氧樹脂之重量平均分子量,較佳為100~5000,更佳為250~3000,又更佳為400~1500。在此,環氧樹脂之重量平均分子量係藉由凝膠滲透層析(GPC)法測量之聚苯乙烯換算的重量平均分子量。 The weight average molecular weight of the epoxy resin is preferably 100 to 5000, more preferably 250 to 3000, and still more preferably 400 to 1500. Here, the weight average molecular weight of the epoxy resin is the weight average molecular weight in terms of polystyrene measured by the gel permeation chromatography (GPC) method.
本發明之樹脂組成物含有(B)硬化劑。硬化劑只要是具有使環氧樹脂硬化的功能時,即無特別限定,可列舉例如酚系硬化劑、萘酚系硬化劑、活性酯系硬化劑、苯並噁嗪系硬化劑、氰酸酯系硬化劑、及碳二亞胺系硬化劑等。硬化劑可1種單獨使用或併用2種以上。(B)成分係選自 酚系硬化劑、萘酚系硬化劑、活性酯系硬化劑、碳二亞胺系硬化劑及氰酸酯系硬化劑之1種以上為佳,更佳為活性酯系硬化劑。 The resin composition of the present invention contains (B) a curing agent. The curing agent is not particularly limited as long as it has the function of curing epoxy resin. Examples include phenolic curing agents, naphthol curing agents, active ester curing agents, benzoxazine curing agents, and cyanate esters. Hardeners, carbodiimide hardeners, etc. The curing agent may be used singly or in combination of two or more kinds. (B) Ingredients are selected from One or more of phenolic hardeners, naphthol hardeners, active ester hardeners, carbodiimide hardeners, and cyanate ester hardeners are preferred, and active ester hardeners are more preferred.
酚系硬化劑及萘酚系硬化劑,從耐熱性及耐水性的觀點,較佳為具有酚醛清漆結構之酚系硬化劑、或具有酚醛清漆結構之萘酚系硬化劑。又,從與導體層之密著性的觀點,較佳為含氮酚系硬化劑,更佳為含有三嗪骨架之酚系硬化劑。其中,從高度滿足耐熱性、耐水性、及與導體層之密著性的觀點,較佳為含有三嗪骨架之苯酚酚醛清漆硬化劑。 The phenolic hardener and the naphthol hardener are preferably a phenol hardener having a novolak structure or a naphthol hardener having a novolak structure from the viewpoint of heat resistance and water resistance. In addition, from the viewpoint of adhesion to the conductor layer, a nitrogen-containing phenolic curing agent is preferred, and a phenolic curing agent containing a triazine skeleton is more preferred. Among them, from the viewpoint of highly satisfying heat resistance, water resistance, and adhesion to the conductor layer, a phenol novolak hardener containing a triazine skeleton is preferred.
酚系硬化劑及萘酚系硬化劑之具體例,可列舉例如明和化成(股)製之「MEH-7700」、「MEH-7810」、「MEH-7851」、「MEH-7851H」、日本化藥(股)製之「NHN」、「CBN」、「GPH」、新日鐵住金(股)製之「SN170」、「SN180」、「SN190」、「SN475」、「SN485」、「SN495」、「SN375」、「SN395」、DIC(股)製之「TD-2090」、「LA-7052」、「LA-7054」、「LA-1356」、「LA-3018-50P」、「EXB-9500」等。 Specific examples of phenolic hardeners and naphthol hardeners include "MEH-7700", "MEH-7810", "MEH-7851", "MEH-7851H", Nippon Kasei Co., Ltd. "NHN", "CBN", "GPH" under the pharmaceutical (stock) system, "SN170", "SN180", "SN190", "SN475", "SN485", "SN495" under the Nippon Steel & Sumitomo Metal Corporation system , "SN375", "SN395", "TD-2090", "LA-7052", "LA-7054", "LA-1356", "LA-3018-50P", "EXB- 9500" and so on.
從得到與導體層之密著性優異之絕緣層的觀點,較佳為活性酯系硬化劑。活性酯系硬化劑無特別限定,一般較佳為使用酚酯類、苯硫酚(Thiophenol)酯類、N-羥基胺酯類、雜環羥基化合物之酯類等之1分子中具有2個以上之反應活性高之酯基的化合物。該活性酯系硬化 劑係藉由羧酸化合物及/或硫代羧酸化合物與羥基化合物及/或硫醇化合物之縮合反應所得者。特別是從提高耐熱性的觀點,較佳為由羧酸化合物與羥基化合物所得之活性酯系硬化劑,更佳為由羧酸化合物與苯酚化合物及/或萘酚化合物所得之活性酯系硬化劑。羧酸化合物可列舉例如苯甲酸、乙酸、琥珀酸、馬來酸、依康酸、苯二甲酸、間苯二甲酸、對苯二甲酸、均苯四甲酸等。苯酚化合物或萘酚化合物,可列舉例如氫醌、間苯二酚、雙酚A、雙酚F、雙酚S、酚系、甲基化雙酚A、甲基化雙酚F、甲基化雙酚S、苯酚、o-甲酚、m-甲酚、p-甲酚、兒茶酚、α-萘酚、β-萘酚、1,5-二羥基萘、1,6-二羥基萘、2,6-二羥基萘、二羥基二苯甲酮、三羥基二苯甲酮、四羥基二苯甲酮、間苯三酚、苯三醇、二環戊二烯型二酚化合物、苯酚酚醛清漆等。在此,「二環戊二烯型二酚化合物」係指對於二環戊二烯1分子,有苯酚2分子產生縮合所得之二酚化合物。 From the viewpoint of obtaining an insulating layer excellent in adhesion to the conductor layer, an active ester-based curing agent is preferred. The active ester curing agent is not particularly limited. Generally, it is preferable to use phenol esters, Thiophenol esters, N-hydroxyamine esters, heterocyclic hydroxy compound esters, etc., having two or more in one molecule. The ester-based compound with high reactivity. The active ester is hardened The agent is obtained by the condensation reaction of a carboxylic acid compound and/or a thiocarboxylic acid compound and a hydroxyl compound and/or a thiol compound. In particular, from the viewpoint of improving heat resistance, an active ester curing agent derived from a carboxylic acid compound and a hydroxy compound is preferred, and an active ester curing agent derived from a carboxylic acid compound and a phenol compound and/or a naphthol compound is more preferred . Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, and pyromellitic acid. Phenol compounds or naphthol compounds, for example, hydroquinone, resorcinol, bisphenol A, bisphenol F, bisphenol S, phenol series, methylated bisphenol A, methylated bisphenol F, methylated Bisphenol S, phenol, o-cresol, m-cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene , 2,6-Dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucinol, benzenetriol, dicyclopentadiene type diphenol compound, phenol Novolac, etc. Here, the "dicyclopentadiene-type diphenol compound" refers to a diphenol compound obtained by condensation of two molecules of phenol for one molecule of dicyclopentadiene.
具體而言,含有二環戊二烯型二酚結構之活性酯化合物、含有萘結構之活性酯化合物、包含苯酚酚醛清漆之乙醯化物之活性酯化合物、包含苯酚酚醛清漆之苯甲醯化物之活性酯化合物為佳,其中更佳為含有萘結構之活性酯化合物、含有二環戊二烯型二酚結構之活性酯化合物。「二環戊二烯型二酚結構」係表示由伸苯基-二伸環戊基-伸苯基所成之2價的結構單位。 Specifically, an active ester compound containing a dicyclopentadiene type diphenol structure, an active ester compound containing a naphthalene structure, an active ester compound containing an acetate of phenol novolac, and an active ester compound containing a phenol novolak of benzoate Active ester compounds are preferred, and among them, active ester compounds containing a naphthalene structure and active ester compounds containing a dicyclopentadiene-type diphenol structure are more preferred. "Dicyclopentadiene-type diphenol structure" means a divalent structural unit formed by phenylene-dicyclopentyl-phenylene.
活性酯系硬化劑之市售品,其中含有二環戊 二烯型二酚結構之活性酯化合物,可列舉「EXB9451」、「EXB9460」、「EXB9460S」、「HPC-8000-65T」、「HPC-8000H-65TM」、「EXB-8000L-65TM」(DIC(股)製),含有萘結構之活性酯化合物,可列舉「EXB9416-70BK」(DIC(股)製),含有苯酚酚醛清漆之乙醯化物的活性酯化合物,可列舉「DC808」(三菱化學(股)製),苯酚酚醛清漆之苯甲醯化物的活性酯,可列舉「YLH1026」(三菱化學(股)製),苯酚酚醛清漆之乙醯化物的活性酯系硬化劑,可列舉「DC808」(三菱化學(股)製),苯酚酚醛清漆之苯甲醯化物的活性酯系硬化劑,可列舉「YLH1026」(三菱化學(股)製)、「YLH1030」(三菱化學(股)製)、「YLH1048」(三菱化學(股)製)等。 Commercially available active ester hardener, which contains dicyclopentane Active ester compounds with diene-type diphenol structure, including "EXB9451", "EXB9460", "EXB9460S", "HPC-8000-65T", "HPC-8000H-65TM", "EXB-8000L-65TM" (DIC (Stock), the active ester compound containing naphthalene structure, including "EXB9416-70BK" (manufactured by DIC), the active ester compound containing the acetone of phenol novolak, including "DC808" (Mitsubishi Chemical (Stock), the active ester of phenol novolac benzoate, including "YLH1026" (manufactured by Mitsubishi Chemical Co., Ltd.), the active ester hardener of phenol novolac acetate, including "DC808 "(Mitsubishi Chemical Co., Ltd.), the active ester hardener of phenol novolac benzoate, including "YLH1026" (Mitsubishi Chemical Co., Ltd.) and "YLH1030" (Mitsubishi Chemical Co., Ltd.) , "YLH1048" (manufactured by Mitsubishi Chemical Corporation), etc.
苯並噁嗪系硬化劑之具體例,可列舉昭和高分子(股)製之「HFB2006M」、四國化成工業(股)製之「P-d」、「F-a」。 Specific examples of the benzoxazine-based hardener include "HFB2006M" manufactured by Showa Polymer Co., Ltd., and "P-d" and "F-a" manufactured by Shikoku Chemical Industry Co., Ltd.
氰酸酯系硬化劑,可列舉例如雙酚A二氰酸酯、多酚氰酸酯、寡(3-亞甲基-1,5-伸苯基氰酸酯)、4,4’-亞甲基雙(2,6-二甲基苯基氰酸酯)、4,4’-亞乙基二苯基二氰酸酯、六氟雙酚A二氰酸酯、2,2-雙(4-氰酸酯)苯基丙烷、1,1-雙(4-氰酸酯苯基甲烷)、雙(4-氰酸酯-3,5-二甲基苯基)甲烷、1,3-雙(4-氰酸酯苯基-1-(甲基亞乙基))苯、雙(4-氰酸酯苯基)硫醚、及雙(4-氰酸酯苯基)醚等之2官能氰酸酯樹脂、由苯酚酚醛清漆及甲酚酚醛清漆等所衍生之多官能氰酸酯樹脂、此等氰酸酯樹脂一部分經三嗪化的預 聚物等。氰酸酯酯系硬化劑之具體例,可列舉Lonza Japan(股)製之「PT30」及「PT60」(均為苯酚酚醛清漆型多官能氰酸酯酯樹脂)、「BA230」、「BA230S75」(雙酚A二氰酸酯一部分或全部經三嗪化之三聚物的預聚物)等。 The cyanate ester curing agent includes, for example, bisphenol A dicyanate, polyphenol cyanate, oligo(3-methylene-1,5-phenylene cyanate), 4,4'- Methyl bis(2,6-dimethylphenyl cyanate), 4,4'-ethylene diphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2-bis( 4-cyanate ester) phenylpropane, 1,1-bis(4-cyanate phenylmethane), bis(4-cyanate ester-3,5-dimethylphenyl)methane, 1,3- Bis (4-cyanate phenyl-1-(methyl ethylene)) benzene, bis (4-cyanate phenyl) sulfide, and bis (4-cyanate phenyl) ether, etc. 2 Functional cyanate ester resins, polyfunctional cyanate ester resins derived from phenol novolacs and cresol novolacs, and some of these cyanate ester resins are pre-triazineified Polymer and so on. Specific examples of cyanate ester curing agents include "PT30" and "PT60" (both phenol novolak type polyfunctional cyanate ester resin) manufactured by Lonza Japan, "BA230", and "BA230S75" (Prepolymer of bisphenol A dicyanate in which part or all of triazine has been triazine) and so on.
碳二亞胺系硬化劑之具體例,可列舉Nisshinbo Chemical(股)製之「V-03」、「V-07」等。 Specific examples of the carbodiimide hardener include "V-03" and "V-07" manufactured by Nisshinbo Chemical Co., Ltd.
環氧樹脂與硬化劑之量比係[環氧樹脂之環氧基之合計數]:[硬化劑之反應基之合計數]之比率表示,較佳為1:0.1~1:10之範圍,更佳為1:0.5~1:5,又更佳為1:1~1:3。在此,硬化劑之反應基係指活性羥基、活性酯基等,因硬化劑之種類而異。又,環氧樹脂之環氧基之合計數係指對於全部之環氧樹脂將各環氧樹脂之固體成分質量除以環氧當量之值合計之值,硬化劑之反應基的合計數係指對於全部之硬化劑將各硬化劑之固體成分質量除以反應基當量之值合計之值。藉由將環氧樹脂與硬化劑之量比設為此範圍,而更提高樹脂組成物之硬化物的耐熱性。 The ratio of the amount of epoxy resin to hardener is expressed by the ratio of [total number of epoxy groups of epoxy resin]: [total number of reactive groups of hardener], preferably in the range of 1:0.1~1:10, More preferably, it is 1:0.5~1:5, and even more preferably 1:1~1:3. Here, the reactive groups of the hardener refer to active hydroxyl groups, active ester groups, etc., which vary depending on the type of hardener. In addition, the total number of epoxy groups of epoxy resin refers to the total value of the solid content of each epoxy resin divided by the epoxy equivalent for all epoxy resins, and the total number of reactive groups of hardener refers to For all the hardeners, the solid content of each hardener is divided by the total value of the equivalent of the reactive group. By setting the ratio of the amount of the epoxy resin to the hardening agent in this range, the heat resistance of the hardened product of the resin composition is further improved.
樹脂組成物中之硬化劑之含量無特別限定,樹脂成分設為100質量%時,較佳為60質量%以下,更佳為55質量%以下,又更佳為50質量%以下。又,下限無特別限制,較佳為30質量%以上,更佳為35質量%以上,又更佳為40質量%以上。 The content of the hardener in the resin composition is not particularly limited. When the resin component is 100% by mass, it is preferably 60% by mass or less, more preferably 55% by mass or less, and still more preferably 50% by mass or less. In addition, the lower limit is not particularly limited, and is preferably 30% by mass or more, more preferably 35% by mass or more, and still more preferably 40% by mass or more.
本發明之樹脂組成物含有(C)具有乙烯基的樹脂。藉由組合含有(C)成分與後述之(D)成分,可得到帶來介電正切(dielectric tangent)低,且鍍敷密著性及底層密著性優異之絕緣層之相溶性、熔融黏度良好的樹脂組成物。(C)成分可1種單獨使用,也可使用2種以上。 The resin composition of the present invention contains (C) a resin having a vinyl group. By combining the component (C) and the component (D) described later, it is possible to obtain the compatibility and melt viscosity of the insulating layer with low dielectric tangent and excellent plating adhesion and underlayer adhesion. Good resin composition. (C) A component may be used individually by 1 type, and may use 2 or more types.
(C)成分只要具有乙烯基時,即無特別限定,較佳為具有芳香環,其中從保存安定性的觀點,較佳為下述式(1)表示之樹脂。 The component (C) is not particularly limited as long as it has a vinyl group. It preferably has an aromatic ring. Among them, the resin represented by the following formula (1) is preferable from the viewpoint of storage stability.
(式(1)中,R1~R6各自獨立表示氫原子、碳原子數1~4之烷基,A表示下述式(2)或下述式(3)表示之基。) (In formula (1), R 1 to R 6 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and A represents a group represented by the following formula (2) or the following formula (3).)
【化2】-CH2-O-E-O-CH2- (2) 【Chemical 2】-CH 2 -OEO-CH 2- (2)
(式(2)中,E表示下述式(E-1)、(E-2)或(E-3)。) (In formula (2), E represents the following formula (E-1), (E-2) or (E-3).)
(式(3)中,R7~R14各自獨立表示氫原子、碳原子數6以下之烷基或苯基,E表示下述式(E-1)、(E-2)或(E-3)。a、b表示至少一方不為0之0~100之整數。) (In formula (3), R 7 to R 14 each independently represent a hydrogen atom, an alkyl group with 6 or less carbon atoms or a phenyl group, and E represents the following formula (E-1), (E-2) or (E- 3). a and b indicate that at least one of them is not an integer of 0 to 100.)
(式(E-1)~(E-3)中,R15~R34各自獨立表示氫原子、碳原子數6以下之烷基、或苯基。G表示碳原子數20以下之直鏈狀、分枝狀或環狀之二價之烴基。) (In formulas (E-1) to (E-3), R 15 to R 34 each independently represent a hydrogen atom, an alkyl group with 6 or less carbon atoms, or a phenyl group. G represents a linear chain with 20 or less carbon atoms , Branched or cyclic divalent hydrocarbon group.)
式(1)中,R1~R6各自獨立表示氫原子、碳原子數1~4之烷基,較佳為氫原子。碳原子數1~4之烷基,可列舉甲基、乙基、n-丙基、異丙基、n-丁基、s-丁基、t-丁基等。 In the formula (1), R 1 to R 6 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, and preferably a hydrogen atom. The alkyl group having 1 to 4 carbon atoms includes methyl, ethyl, n-propyl, isopropyl, n-butyl, s-butyl, t-butyl, and the like.
式(3)中之R7~R14、及式(E-1)~(E-3)中之R15 ~R34各自獨立表示氫原子、碳原子數6以下之烷基或苯基。碳原子數6以下之烷基,可列舉甲基、乙基、n-丙基、異丙基、n-丁基、s-丁基、t-丁基、戊基、己基等。R7~R14較佳為氫原子、甲基。 R 7 to R 14 in formula (3) and R 15 to R 34 in formulas (E-1) to (E-3) each independently represent a hydrogen atom, an alkyl group with 6 or less carbon atoms, or a phenyl group. Examples of alkyl groups having 6 or less carbon atoms include methyl, ethyl, n-propyl, isopropyl, n-butyl, s-butyl, t-butyl, pentyl, and hexyl. R 7 to R 14 are preferably a hydrogen atom or a methyl group.
a、b表示至少一方不為0之0~100之整數。a、b有至少一方不為0的條件,較佳為0~50之整數,更佳為0~10之整數。 a and b indicate that at least one of them is not an integer of 0 to 100. There is a condition that at least one of a and b is not 0, preferably an integer of 0-50, and more preferably an integer of 0-10.
G表示碳原子數20以下之直鏈狀、分枝狀或環狀之二價之烴基。2價之烴基,可列舉碳原子數1~20之伸烷基、碳原子數2~20之伸烯基、或碳原子數2~20之伸炔基。碳原子數1~20之伸烷基,可列舉亞甲基、伸乙基、伸丙基、伸丁基等。碳原子數2~20之伸烯基,可列舉伸乙烯基、伸丙烯基、伸丁烯基等。碳原子數2~20之伸炔基,可列舉伸乙炔基、伸丙炔基、伸丁炔基等。 G represents a linear, branched or cyclic divalent hydrocarbon group having 20 or less carbon atoms. The divalent hydrocarbon group includes an alkylene group having 1 to 20 carbon atoms, an alkenylene group having 2 to 20 carbon atoms, or an alkynylene group having 2 to 20 carbon atoms. Examples of the alkylene group having 1 to 20 carbon atoms include methylene, ethylene, propyl, and butyl. The alkenylene group having 2 to 20 carbon atoms includes an ethylene group, a propenylene group, and a butenylene group. The alkynylene group having 2 to 20 carbon atoms includes ethynylene, propynylene, butynylene, and the like.
具有伸乙基之樹脂中之伸乙基,可具有取代基。又,上述烷基、苯基、及2價之烴基也可具有取代基。 The ethylene group in the ethylene group resin may have a substituent. In addition, the above-mentioned alkyl group, phenyl group, and divalent hydrocarbon group may have a substituent.
取代基無特別限制,可列舉例如鹵素原子、-OH、-O-C1-6烷基、-N(C1-6烷基)2、C1-6烷基、C6-10芳基、-NH2、-CN、-C(O)O-C1-6烷基、-COOH、-C(O)H、-NO2等。 The substituent is not particularly limited, and examples thereof include halogen atoms, -OH, -OC 1-6 alkyl, -N(C 1-6 alkyl) 2 , C 1-6 alkyl, C 6-10 aryl,- NH 2 , -CN, -C(O)OC 1-6 alkyl, -COOH, -C(O)H, -NO 2 and so on.
在此,「Cp-q」(p及q為正整數,滿足p<q。)的用語,表示記載於此用語後之有機基之碳原子數為p~q者。例如「C1-6烷基」的表現表示碳原子數1~6 之烷基。 Here, the term “C pq ”(p and q are positive integers and satisfy p<q.) means that the number of carbon atoms of the organic group described after this term is p~q. For example , the expression of "C 1-6 alkyl" means an alkyl group with 1 to 6 carbon atoms.
上述取代基可再含有取代基(以下有稱為「二次取代基」的情形)。二次取代基無特別記載時,可使用與上述取代基相同者。 The above-mentioned substituent may further contain a substituent (hereinafter, it may be referred to as a "secondary substituent"). When the secondary substituent is not specifically described, the same one as the above-mentioned substituent can be used.
以下例示(C)成分之具體例,但是本發明不限定於此等者。 Although the specific example of (C)component is illustrated below, this invention is not limited to these.
(式中,R1~R6、E、a、b係與式(1)或式(3)中之符號者相同,較佳之範圍也同樣。) (In the formula, R 1 to R 6 , E, a, and b are the same as the symbols in formula (1) or formula (3), and the preferred range is also the same.)
(C)成分可使用市售品,市售品之具體例可列舉三菱瓦斯化學(股)製之「OPE-2St 2200(數平均分子量2200)」、「OPE-2St 1200(數平均分子量2200)」(苯乙烯改質聚苯醚樹脂)、三菱化學(股)製之「YL7776(數平均分子量331)」、(雙二甲苯酚二烯丙醚樹脂)等。 (C) Commercial products can be used as components. Specific examples of commercial products include "OPE-2St 2200 (number average molecular weight 2200)" and "OPE-2St 1200 (number average molecular weight 2200) manufactured by Mitsubishi Gas Chemical Co., Ltd. "(Styrene modified polyphenylene ether resin), "YL7776 (number average molecular weight 331)" manufactured by Mitsubishi Chemical Corporation, (bis-xylenol diallyl ether resin), etc.
(C)成分之數平均分子量,從防止樹脂清漆乾 燥時之揮發、防止樹脂組成物之熔融黏度過度上升的觀點,較佳為100~10000之範圍,更佳為200~3000之範圍。又,本發明中之數平均分子量係藉由凝膠滲透層析(GPC)法(聚苯乙烯換算)測量。藉由GPC法之數平均分子量,具體而言,測量裝置使用(股)島津製作所製LC-9A/RID-6A,管柱使用昭和電工(股)製Shodex K-800P/K-804L/K-804L,移動相使用氯仿等,在管柱溫度40℃下測量,可使用標準聚苯乙烯之檢量線算出。 (C) The number average molecular weight of the component, to prevent the resin varnish from drying From the viewpoint of volatilization during drying and preventing excessive increase of the melt viscosity of the resin composition, the range is preferably 100 to 10,000, and more preferably 200 to 3,000. In addition, the number average molecular weight in the present invention is measured by the gel permeation chromatography (GPC) method (in terms of polystyrene). The number average molecular weight by the GPC method, specifically, the measuring device uses Shimadzu Corporation LC-9A/RID-6A, and the column uses Showa Denko Corporation Shodex K-800P/K-804L/K- 804L, using chloroform as the mobile phase, and measuring at a column temperature of 40°C, which can be calculated using the calibration curve of standard polystyrene.
(C)成分之詳細可參酌日本特開2014-34580號公報之段落0010~0022的記載,此內容被納入本說明書中。 (C) For the details of the ingredients, please refer to the descriptions in paragraphs 0010 to 0022 of JP 2014-34580 A, which are included in this specification.
(C)成分之含量,從得到相溶性良好之樹脂組成物的觀點,將樹脂成分設為100質量%的情形,較佳為30質量%以下,更佳為25質量%以下,又更佳為20質量%以下或15質量%以下。(C)成分之含量之下限,從與後述之(D)成分之組合,達成所期望之效果的觀點,將樹脂成分設為100質量%的情形,較佳為1質量%以上,更佳為3質量%以上,又更佳為5質量%以上。 (C) The content of the component, from the viewpoint of obtaining a resin composition with good compatibility, when the resin component is 100% by mass, it is preferably 30% by mass or less, more preferably 25% by mass or less, and still more preferably 20% by mass or less or 15% by mass or less. The lower limit of the content of the component (C), from the viewpoint of achieving the desired effect in combination with the component (D) described later, when the resin component is set to 100% by mass, it is preferably 1% by mass or more, and more preferably 3% by mass or more, more preferably 5% by mass or more.
本發明之樹脂組成物含有特定量之(D)茚香豆酮樹脂。藉由含有特定量之(D)成分,可得到改善相溶性,物性平衡良好的樹脂組成物。(D)成分中所含之香豆酮骨架係與極性高的環氧樹脂或硬化劑之相溶性佳,又,茚骨架 及香豆酮骨架係與極性低之乙烯樹脂(vinyl resin)之相溶性佳。因此,在極性高的樹脂與低的樹脂間,作為相溶化劑產生作用,而改善樹脂組成物全體的相溶性。 The resin composition of the present invention contains a specific amount of (D) indencoumarone resin. By containing the component (D) in a specific amount, a resin composition with improved compatibility and a good balance of physical properties can be obtained. (D) The coumarone skeleton contained in the component has good compatibility with epoxy resins or hardeners with high polarity, and the indene skeleton And the coumarone skeleton system has good compatibility with vinyl resin with low polarity. Therefore, it acts as a compatibilizer between a resin with a high polarity and a resin with a low polarity, thereby improving the compatibility of the entire resin composition.
(D)成分可列舉例如茚及香豆酮之共聚物、茚、香豆酮及苯乙烯之共聚物等。 (D) As a component, the copolymer of indene and coumarone, the copolymer of indene, coumarone, and styrene, etc. are mentioned, for example.
茚香豆酮樹脂中之香豆酮成分之含有比率,較佳為5莫耳%以上,更佳為8莫耳%以上,又更佳為10莫耳%以上。上限較佳為40莫耳%以下,更佳為35莫耳%以下,又更佳為30莫耳%以下。 The content ratio of the coumarone component in the incoumarone resin is preferably 5 mol% or more, more preferably 8 mol% or more, and still more preferably 10 mol% or more. The upper limit is preferably 40 mol% or less, more preferably 35 mol% or less, and still more preferably 30 mol% or less.
茚香豆酮樹脂中之茚成分之含有比率,較佳為30莫耳%以上,更佳為35莫耳%以上,又更佳為40莫耳%以上。上限較佳為80莫耳%以下,更佳為75莫耳%以下,又更佳為70莫耳%以下。 The content rate of the indene component in the incoumarone resin is preferably 30 mol% or more, more preferably 35 mol% or more, and still more preferably 40 mol% or more. The upper limit is preferably 80 mol% or less, more preferably 75 mol% or less, and still more preferably 70 mol% or less.
茚香豆酮樹脂為茚、香豆酮及苯乙烯之共聚物的情形,苯乙烯成分之含有比率,較佳為20莫耳%以上,更佳為25莫耳%以上,又更佳為30莫耳%以上。上限較佳為70莫耳%以下,更佳為65莫耳%以下,又更佳為60莫耳%以下。 In the case where the indene coumarone resin is a copolymer of indene, coumarone, and styrene, the content ratio of the styrene component is preferably 20 mol% or more, more preferably 25 mol% or more, and still more preferably 30 More than mol%. The upper limit is preferably 70 mol% or less, more preferably 65 mol% or less, and still more preferably 60 mol% or less.
茚香豆酮樹脂之具體例,可列舉日塗化學(股)製之「H-100」、「V-120S」、「V-120」等。 Specific examples of the incoumarone resin include "H-100", "V-120S", and "V-120" manufactured by Nico Chemical Co., Ltd.
(D)成分之含量從得到相溶性良好之樹脂組成物的觀點,將樹脂成分設為100質量%時為5質量%以上,較佳為8質量%以上,更佳為10質量%以上。(D)成分之含量之上限,從得到熔融黏度良好的樹脂組成物的觀 點,得到底層密著性優異之絕緣層的觀點,為20質量%以下,較佳為18質量%以下,更佳為16質量%以下或15質量%以下。 (D) From the viewpoint of obtaining a resin composition with good compatibility, the content of the component is 5% by mass or more when the resin component is 100% by mass, preferably 8% by mass or more, and more preferably 10% by mass or more. (D) The upper limit of the content of the component, from the viewpoint of obtaining a resin composition with good melt viscosity In terms of obtaining an insulating layer with excellent underlayer adhesion, it is 20% by mass or less, preferably 18% by mass or less, and more preferably 16% by mass or less or 15% by mass or less.
本發明之樹脂組成物可進一步含有(E)無機填充材。無機填充材之材料無特別限定,可列舉例如二氧化矽、氧化鋁、玻璃、菫青石、矽氧化物、硫酸鋇、碳酸鋇、滑石、黏土、雲母粉、氧化鋅、水滑石、水鋁石、氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、氧化鎂、氮化硼、氮化鋁、氮化錳、硼酸鋁、碳酸鍶、鈦酸鍶、鈦酸鈣、鈦酸鎂、鈦酸鉍、氧化鈦、氧化鋯、鈦酸鋇、鈦酸鋯酸鋇、鋯酸鋇、鋯酸鈣、磷酸鋯、及磷酸鎢酸鋯等。此等之中,特佳為二氧化矽。又,二氧化矽較佳為球狀二氧化矽。無機填充材可1種單獨使用,亦可組合2種以上使用。 The resin composition of the present invention may further contain (E) an inorganic filler. The material of the inorganic filler is not particularly limited, and examples include silica, alumina, glass, vermilionite, silica, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, diaspore , Aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, titanic acid Bismuth, titanium oxide, zirconium oxide, barium titanate, barium titanate zirconate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate phosphate, etc. Among these, silicon dioxide is particularly preferred. In addition, the silica is preferably spherical silica. The inorganic filler may be used singly or in combination of two or more kinds.
無機填充材之平均粒徑,從提高電路埋入性,得到表面粗糙度低之絕緣層的觀點,較佳為5μm以下,更佳為2.5μm以下,又更佳為2μm以下,更佳為1.5μm以下。該平均粒徑之下限無特別限定,較佳為0.01μm以上,更佳為0.05μm以上,又更佳為0.1μm以上、0.5μm以上、或1μm以上。具有這種平均粒徑之無機填充材之市售品,可列舉例如NIPPON STEEL & SUMIKIN MATERIALS(股)製「SP60-05」、「SP507-05」、(股)admatechs製「YC100C」、「YA050C」、 「YA050C-MJE」、「YA010C」、Denka(股)製「UFP-30」、(股)德山製「SilFile NSS-3N」、「SilFile NSS-4N」、「SilFile NSS-5N」、(股)admatechs製「SC2500SQ」、「SO-C4」、「SO-C2」、「SO-C1」等。 The average particle size of the inorganic filler is preferably 5μm or less, more preferably 2.5μm or less, still more preferably 2μm or less, and more preferably 1.5 Below μm. The lower limit of the average particle size is not particularly limited, and is preferably 0.01 μm or more, more preferably 0.05 μm or more, and still more preferably 0.1 μm or more, 0.5 μm or more, or 1 μm or more. Commercial products of inorganic fillers having such an average particle size include, for example, "SP60-05" and "SP507-05" manufactured by NIPPON STEEL & SUMIKIN MATERIALS, "YC100C" and "YA050C" manufactured by Admatechs. ", "YA050C-MJE", "YA010C", "UFP-30" manufactured by Denka Co., Ltd., "SilFile NSS-3N" manufactured by Tokuyama, "SilFile NSS-4N", "SilFile NSS-5N", (Stock) ) Admatechs "SC2500SQ", "SO-C4", "SO-C2", "SO-C1", etc.
無機填充材之平均粒徑可藉由依據米氏(Mie)散射理論之雷射繞射.散射法來測量。具體而言,可藉由雷射繞射散射式粒度分布測量裝置,以體積基準製作無機填充材之粒度分布,以其中值粒徑作為平均粒徑來測量。測量樣品較佳為使用藉由超音波將無機填充材分散於水中者。雷射繞射散射式粒度分布測量裝置可使用(股)堀場製作所製「LA-500」等。 The average particle size of the inorganic filler can be diffracted by laser based on Mie scattering theory. Scattering method to measure. Specifically, a laser diffraction scattering type particle size distribution measuring device can be used to produce the particle size distribution of the inorganic filler on a volume basis, and the median particle size can be used as the average particle size for measurement. The measurement sample is preferably one that disperses the inorganic filler in water by ultrasonic waves. The laser diffraction scattering type particle size distribution measuring device can use the "LA-500" manufactured by Horiba Manufacturing Co., Ltd., etc.
無機填充材從提高耐濕性及分散性的觀點,較佳為經胺基矽烷系偶合劑、環氧基矽烷系偶合劑、巰基矽烷系偶合劑、烷氧基矽烷化合物、有機矽氮烷化合物、鈦酸酯系偶合劑等之1種以上的表面處理劑處理者。表面處理劑之市售品,可列舉例如信越化學工業(股)製「KBM403」(3-環氧丙氧基丙基三甲氧基矽烷)、信越化學工業(股)製「KBM803」(3-巰基丙基三甲氧基矽烷)、信越化學工業(股)製「KBE903」(3-胺基丙基三乙氧基矽烷)、信越化學工業(股)製「KBM573」(N-苯基-3-胺基丙基三甲氧基矽烷)、信越化學工業(股)製「SZ-31」(六甲基二矽氮烷)、信越化學工業(股)製「KBM-103」(苯基三甲氧基矽烷)、信越化學工業(股)製「KBM-4803」(長鏈環氧 型矽烷偶合劑)等。 The inorganic filler is preferably an aminosilane coupling agent, epoxysilane coupling agent, mercaptosilane coupling agent, alkoxysilane compound, and organosilazane compound from the viewpoint of improving moisture resistance and dispersibility. , One or more surface treatment agents such as titanate coupling agent. Commercial products of surface treatment agents include, for example, "KBM403" (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., and "KBM803" (3-Glycoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd. Mercaptopropyltrimethoxysilane), "KBE903" (3-aminopropyltriethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., and "KBM573" (N-phenyl-3) manufactured by Shin-Etsu Chemical Co., Ltd. -Aminopropyltrimethoxysilane), "SZ-31" (hexamethyldisilazane) manufactured by Shin-Etsu Chemical Co., Ltd., and "KBM-103" (phenyltrimethoxy) manufactured by Shin-Etsu Chemical Co., Ltd. Base silane), Shin-Etsu Chemical Co., Ltd. "KBM-4803" (long-chain epoxy Type silane coupling agent) and so on.
藉由表面處理劑之表面處理的程度,可以無機填充材之每單位表面積之碳量來評價。無機填充材之每單位表面積之碳量,從提高無機填充材之分散性的觀點,較佳為0.02mg/m2以上,更佳為0.1mg/m2以上,又更佳為0.2mg/m2以上。此外,從防止樹脂清漆之熔融黏度或薄片形態下之熔融黏度之上升的觀點,較佳為1mg/m2以下,更佳為0.8mg/m2以下,又更佳為0.5mg/m2以下。 The degree of surface treatment by the surface treatment agent can be evaluated by the amount of carbon per unit surface area of the inorganic filler. The amount of carbon per unit surface area of the inorganic filler, from the viewpoint of improving the dispersibility of the inorganic filler, is preferably 0.02 mg/m 2 or more, more preferably 0.1 mg/m 2 or more, and still more preferably 0.2 mg/m 2 or more. In addition, from the viewpoint of preventing the melt viscosity of the resin varnish or the melt viscosity in the sheet form from rising, it is preferably 1 mg/m 2 or less, more preferably 0.8 mg/m 2 or less, and still more preferably 0.5 mg/m 2 or less .
無機填充材之每單位表面積之碳量,可藉由將表面處理後之無機填充材以溶劑(例如甲基乙基酮(MEK))進行洗淨處理後來測定。具體而言,將作為溶劑之充分量之MEK添加於經表面處理劑表面處理的無機填充材中,於25℃下進行超音波洗淨5分鐘。去除上澄液,使固體成分乾燥後,使用碳分析計測定無機填充材之每單位表面積的碳量。碳分析計可使用(股)堀場製作所製之「EMIA-320V」等。 The amount of carbon per unit surface area of the inorganic filler can be measured by washing the surface-treated inorganic filler with a solvent (for example, methyl ethyl ketone (MEK)). Specifically, a sufficient amount of MEK as a solvent is added to an inorganic filler surface-treated with a surface treatment agent, and ultrasonic cleaning is performed at 25°C for 5 minutes. After removing the supernatant liquid and drying the solid content, use a carbon analyzer to measure the amount of carbon per unit surface area of the inorganic filler. The carbon analyzer can use "EMIA-320V" manufactured by Horiba Manufacturing Co., Ltd., etc.
樹脂組成物中之無機填充材之含量,從得到熱膨脹率低之絕緣層的觀點,將樹脂組成物中之不揮發成分設為100質量%時,較佳為50質量%以上,更佳為55質量%以上,又更佳為60質量%以上,或65質量%以上。上限從絕緣層之機械強度、特別是拉伸的觀點,較佳為95質量%以下,更佳為90質量%以下,又更佳為85質量%以下,或80質量%以下。 The content of the inorganic filler in the resin composition, from the viewpoint of obtaining an insulating layer with a low thermal expansion rate, when the non-volatile content in the resin composition is 100% by mass, it is preferably 50% by mass or more, more preferably 55 Mass% or more, more preferably 60% by mass or more, or 65% by mass or more. The upper limit is preferably 95% by mass or less, more preferably 90% by mass or less, still more preferably 85% by mass or less, or 80% by mass or less from the viewpoint of the mechanical strength of the insulating layer, particularly stretching.
本發明之樹脂組成物也可含有(F)硬化促進劑。硬化促進劑可列舉例如磷系硬化促進劑、胺系硬化促進劑、咪唑系硬化促進劑、胍系硬化促進劑、金屬系硬化促進劑、有機過氧化物系硬化促進劑等,較佳為磷系硬化促進劑、胺系硬化促進劑、咪唑系硬化促進劑、金屬系硬化促進劑,更佳為胺系硬化促進劑、咪唑系硬化促進劑、金屬系硬化促進劑。硬化促進劑可1種單獨使用,亦可組合2種以上使用。 The resin composition of the present invention may contain (F) a hardening accelerator. Examples of hardening accelerators include phosphorus hardening accelerators, amine hardening accelerators, imidazole hardening accelerators, guanidine hardening accelerators, metal hardening accelerators, organic peroxide hardening accelerators, etc., preferably phosphorus It is a hardening accelerator, an amine hardening accelerator, an imidazole hardening accelerator, a metal hardening accelerator, and more preferably an amine hardening accelerator, an imidazole hardening accelerator, or a metal hardening accelerator. A hardening accelerator may be used individually by 1 type, and may be used in combination of 2 or more types.
磷系硬化促進劑可列舉例如三苯基膦、鏻硼酸氯化合物、四苯基鏻四苯基硼酸鹽、n-丁基鏻四苯基硼酸鹽、四丁基鏻癸酸鹽、(4-甲基苯基)三苯基鏻硫代氰酸鹽、四苯基鏻硫代氰酸鹽、丁基三苯基鏻硫代氰酸鹽等,較佳為三苯基膦、四丁基鏻癸酸鹽。 Phosphorus-based hardening accelerators include, for example, triphenyl phosphine, phosphonium borate chloride compound, tetraphenyl phosphonium tetraphenyl borate, n-butyl phosphonium tetraphenyl borate, tetrabutyl phosphonium decanoate, (4- (Methyl phenyl) triphenyl phosphonium thiocyanate, tetraphenyl phosphonium thiocyanate, butyl triphenyl phosphonium thiocyanate, etc., preferably triphenyl phosphine, tetrabutyl phosphonium Decanoate.
胺系硬化促進劑可列舉例如三乙胺、三丁胺等之三烷胺、4-二甲基胺基吡啶、苄基二甲胺、2,4,6,-參(二甲基胺基甲基)酚、1,8-二氮雜雙環(5,4,0)-十一碳烯等,較佳為4-二甲基胺基吡啶、1,8-二氮雜雙環(5,4,0)-十一碳烯。 Amine-based hardening accelerators include, for example, trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6,-s (dimethylamino) Methyl)phenol, 1,8-diazabicyclo(5,4,0)-undecene, etc., preferably 4-dimethylaminopyridine, 1,8-diazabicyclo(5, 4,0)-Undecene.
咪唑系硬化促進劑,可列舉例如2-甲基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰基乙基-2-甲基咪唑、1-氰基 乙基-2-十一烷基咪唑、1-氰基乙基-2-乙基-4-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑鎓偏苯三甲酸鹽、1-氰基乙基-2-苯基咪唑鎓偏苯三甲酸鹽、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-十一烷基咪唑基-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-乙基-4’-甲基咪唑基-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪異三聚氰酸加成物、2-苯基咪唑異三聚氰酸加成物、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2,3-二氫-1H-吡咯并[1,2-a]苯并咪唑、1-十二烷基-2-甲基-3-苄基咪唑鎓氯化物、2-甲基咪唑啉、2-苯基咪唑啉等之咪唑化合物及咪唑化合物與環氧樹脂之加合物,較佳為2-乙基-4-甲基咪唑、1-苄基-2-苯基咪唑。 The imidazole-based hardening accelerators include, for example, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole , 1,2-Dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1 -Benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyano Ethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2 -Undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl -(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-Diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[ 2'-Methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4 ,5-Dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole, 1- Dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, 2-phenylimidazoline and other imidazole compounds and adducts of imidazole compounds and epoxy resin, preferably It is 2-ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazole.
咪唑系硬化促進劑,亦可使用市售品,可列舉例如三菱化學(股)製之「P200-H50」等。 As an imidazole-based hardening accelerator, commercially available products may also be used, and examples include "P200-H50" manufactured by Mitsubishi Chemical Corporation.
胍系硬化促進劑,可列舉例如雙氰胺、1-甲基胍、1-乙基胍、1-環己基胍、1-苯基胍、1-(o-甲苯基)胍、二甲基胍、二苯基胍、三甲基胍、四甲基胍、五甲基胍、1,5,7-三氮雜雙環[4.4.0]癸-5-烯、7-甲基-1,5,7-三氮雜雙環[4.4.0]癸-5-烯、1-甲基雙胍、1-乙基雙胍、1-n-丁基雙胍、1-n-十八烷基雙胍、1,1-二甲基雙胍、1,1-二乙基雙胍、1-環己基雙胍、1-烯丙基雙胍、1-苯基雙胍、1-(o-甲苯基)雙胍等,較佳為雙氰胺、1,5,7-三氮雜雙環[4.4.0]癸-5-烯。 Guanidine-based hardening accelerators include, for example, dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1-(o-tolyl)guanidine, and dimethylguanidine. Guanidine, diphenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]dec-5-ene, 7-methyl-1, 5,7-Triazabicyclo[4.4.0]dec-5-ene, 1-methyl biguanide, 1-ethyl biguanide, 1-n-butyl biguanide, 1-n-octadecyl biguanide, 1 , 1-Dimethyl biguanide, 1,1-diethyl biguanide, 1-cyclohexyl biguanide, 1-allyl biguanide, 1-phenyl biguanide, 1-(o-tolyl) biguanide, etc., preferably Dicyandiamide, 1,5,7-triazabicyclo[4.4.0]dec-5-ene.
金屬系硬化促進劑,可列舉例如鈷、銅、鋅、鐵、鎳、錳、錫等之金屬之有機金屬錯合物或有機金屬鹽。有機金屬錯合物之具體例,可列舉乙醯丙酮鈷(II)、乙醯丙酮鈷(III)等之有機鈷錯合物、乙醯丙酮銅(II)等之有機銅錯合物、乙醯丙酮鋅(II)等之有機鋅錯合物、乙醯丙酮鐵(III)等之有機鐵錯合物、乙醯丙酮鎳(II)等之有機鎳錯合物、乙醯丙酮錳(II)等之有機錳錯合物等。有機金屬鹽可列舉例如辛酸鋅(Zinc octoate)、辛酸錫、萘烷酸鋅、萘烷酸鈷、硬脂酸錫、硬脂酸鋅等。 Examples of metal-based hardening accelerators include organometallic complexes or organometallic salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of organometallic complexes include organic cobalt complexes such as cobalt acetone (II) and cobalt acetone (III), organic copper complexes such as copper acetone (II), and Organic zinc complexes such as zinc acetone (II), organic iron complexes such as iron acetone (III), organic nickel complexes such as nickel acetone (II), manganese acetone (II) ) And other organic manganese complexes. Examples of the organic metal salt include zinc octoate, tin octoate, zinc decalinate, cobalt decalinate, tin stearate, and zinc stearate.
有機過氧化物系硬化促進劑,可列舉例如二枯基過氧化物、環己酮過氧化物、tert-丁基過氧苯甲酸酯、甲基乙基酮過氧化物、二枯基過氧化物、tert-丁基枯基過氧化物、二-tert-丁基過氧化物、二異丙基苯過氧化氫、異丙苯過氧化氫(cumene hydroperoxide)、tert-丁基過氧化氫等。有機過氧化物系硬化促進劑,可使用市售品,可列舉例如日油公司製之「Percumyl D」等。 Organic peroxide-based curing accelerators, for example, dicumyl peroxide, cyclohexanone peroxide, tert-butyl peroxybenzoate, methyl ethyl ketone peroxide, dicumyl peroxide Oxide, tert-butylcumyl peroxide, di-tert-butyl peroxide, diisopropylbenzene hydroperoxide, cumene hydroperoxide (cumene hydroperoxide), tert-butyl hydroperoxide Wait. The organic peroxide-based hardening accelerator can be a commercially available product, and examples include "Percumyl D" manufactured by NOF Corporation.
樹脂組成物中之硬化促進劑的含量,無特別限定,以樹脂成分為100質量%時,較佳為0.01質量%~3質量%。 The content of the hardening accelerator in the resin composition is not particularly limited, but when the resin component is 100% by mass, it is preferably 0.01% by mass to 3% by mass.
本發明之樹脂組成物也可含有(G)熱可塑性樹脂。熱可塑性樹脂可列舉例如苯氧基樹脂、聚乙烯醇縮乙醛樹脂、聚烯烴樹脂、聚丁二烯樹脂、聚醯亞胺樹脂、聚醯胺 醯亞胺樹脂、聚醚醯亞胺樹脂、聚碸樹脂、聚醚碸樹脂、聚碳酸酯樹脂、聚醚醚酮樹脂、聚酯樹脂,較佳為苯氧基樹脂。熱可塑性樹脂,可1種單獨使用,亦可組合2種以上使用。 The resin composition of the present invention may contain (G) thermoplastic resin. Examples of thermoplastic resins include phenoxy resins, polyvinyl acetal resins, polyolefin resins, polybutadiene resins, polyimide resins, and polyamides. The imide resin, polyetherimine resin, polyether resin, polyetherether resin, polycarbonate resin, polyetheretherketone resin, polyester resin, preferably phenoxy resin. The thermoplastic resin may be used alone or in combination of two or more kinds.
熱可塑性樹脂之聚苯乙烯換算之重量平均分子量,較佳為8,000~70,000之範圍,更佳為10,000~60,000之範圍,又更佳為20,000~60,000之範圍。熱可塑性樹脂之聚苯乙烯換算之重量平均分子量係以凝膠滲透層析(GPC)法測量。具體而言,熱可塑性樹脂之聚苯乙烯換算之重量平均分子量,可使用作為測量裝置之(股)島津製作所LC-9A/RID-6A,使用作為管柱之昭和電工(股)製Shodex K-800P/K-804L/K-804L,使用氯仿等作為移動相,於管柱溫度40℃進行測量,使用標準聚苯乙烯檢量線來算出。 The weight average molecular weight of the thermoplastic resin in terms of polystyrene is preferably in the range of 8,000 to 70,000, more preferably in the range of 10,000 to 60,000, and still more preferably in the range of 20,000 to 60,000. The weight average molecular weight of thermoplastic resin converted to polystyrene is measured by gel permeation chromatography (GPC) method. Specifically, the weight average molecular weight in terms of polystyrene of the thermoplastic resin can be measured using Shimadzu LC-9A/RID-6A as a measuring device, and Shodex K- manufactured by Showa Denko Co., Ltd. as a pipe column. 800P/K-804L/K-804L, use chloroform etc. as the mobile phase, measure at a column temperature of 40°C, and calculate using a standard polystyrene calibration curve.
苯氧基樹脂可列舉例如具有選自由雙酚A骨架、雙酚F骨架、雙酚S骨架、雙酚苯乙酮骨架、酚醛清漆骨架、聯苯骨架、茀骨架、二環戊二烯骨架、降莰烯骨架、萘骨架、蒽骨架、金剛烷骨架、萜烯骨架、及三甲基環己烷骨架所成群組之1種以上之骨架的苯氧基樹脂。苯氧基樹脂之末端,可為酚性羥基、環氧基等之任一的官能基。苯氧基樹脂可1種單獨使用,亦可組合2種以上使用。苯氧基樹脂之具體例,可列舉三菱化學(股)製之「1256」及「4250」(均為含有雙酚A骨架之苯氧基樹脂)、「YX8100」(含有雙酚S骨架之苯氧基樹脂)、及 「YX6954」(含有雙酚苯乙酮骨架之苯氧基樹脂),其他可列舉新日鐵住金化學(股)製之「FX280」及「FX293」、三菱化學(股)製之「「YX6954BH30」、「YX7553」、「YX7553BH30」、「YL7769BH30」、「YL6794」、「YL7213」、「YL7290」、「YL7891BH30」及「YL7482」等。 Examples of the phenoxy resin include those having a skeleton selected from the group consisting of bisphenol A skeleton, bisphenol F skeleton, bisphenol S skeleton, bisphenol acetophenone skeleton, novolak skeleton, biphenyl skeleton, sulphur skeleton, dicyclopentadiene skeleton, A phenoxy resin with one or more skeletons of the group consisting of norbornene skeleton, naphthalene skeleton, anthracene skeleton, adamantane skeleton, terpene skeleton, and trimethylcyclohexane skeleton. The terminal of the phenoxy resin may be any functional group such as a phenolic hydroxyl group and an epoxy group. A phenoxy resin may be used individually by 1 type, and may be used in combination of 2 or more types. Specific examples of phenoxy resins include "1256" and "4250" manufactured by Mitsubishi Chemical Corporation (both are phenoxy resins containing bisphenol A skeleton), and "YX8100" (benzene containing bisphenol S skeleton) Oxy resin), and "YX6954" (phenoxy resin containing bisphenol acetophenone skeleton), other examples include "FX280" and "FX293" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., and "YX6954BH30" manufactured by Mitsubishi Chemical Co., Ltd. , "YX7553", "YX7553BH30", "YL7769BH30", "YL6794", "YL7213", "YL7290", "YL7891BH30" and "YL7482", etc.
聚乙烯醇縮乙醛樹脂可列舉例如聚乙烯醇縮甲醛樹脂、聚乙烯基丁醛樹脂,較佳為聚乙烯基丁醛樹脂。聚乙烯醇縮乙醛樹脂之具體例,可列舉例如電化學工業(股)製之「電化丁醛4000-2」、「電化丁醛5000-A」、「電化丁醛6000-C」、「電化丁醛6000-EP」、積水化學工業(股)製之S-LEC BH系列、BX系列(例如BX-5Z)、KS系列(例如KS-1)、BL系列、BM系列等。 Examples of the polyvinyl acetal resin include polyvinyl formal resin and polyvinyl butyral resin, and polyvinyl butyral resin is preferred. Specific examples of polyvinyl acetal resins include "electrochemical butyraldehyde 4000-2", "electrochemical butyraldehyde 5000-A", "electrochemical butyraldehyde 6000-C", and "electrochemical butyraldehyde 4000-2" manufactured by the Electrochemical Industry Co., Ltd. Electrochemical Butyraldehyde 6000-EP", S-LEC BH series, BX series (such as BX-5Z), KS series (such as KS-1), BL series, BM series manufactured by Sekisui Chemical Industry Co., Ltd.
聚醯亞胺樹脂之具體例,可列舉新日本理化(股)製之「Rikacoat SN20」及「Rikacoat PN20」。聚醯亞胺樹脂之具體例,可列舉2官能性羥基末端聚丁二烯、二異氰酸酯化合物及四元酸酐反應所得之直鏈聚醯亞胺(LINEAR POLYIMIDE)(日本特開2006-37083號公報記載之聚醯亞胺)、含有聚矽氧烷骨架之聚醯亞胺(日本特開2002-12667號公報及日本特開2000-319386號公報等所記載之聚醯亞胺)等之改質聚醯亞胺。 Specific examples of polyimide resins include "Rikacoat SN20" and "Rikacoat PN20" manufactured by Nippon Chemical Co., Ltd. Specific examples of polyimide resins include linear polyimide obtained by reacting bifunctional hydroxyl-terminated polybutadiene, diisocyanate compound and tetrabasic acid anhydride (LINEAR POLYIMIDE) (Japanese Patent Application Publication No. 2006-37083) The modification of polyimide described in), polyimide containing polysiloxane skeleton (polyimide described in Japanese Patent Application Publication No. 2002-12667 and Japanese Patent Application Publication No. 2000-319386), etc. Polyimide.
聚醯胺醯亞胺樹脂之具體例,可列舉東洋紡績(股)製之「Vylomax HR11NN」及「Vylomax HR16NN」。又,聚醯胺醯亞胺樹脂之具體例,可列舉日 立化成工業(股)製之「KS9100」、「KS9300」(含有聚矽氧烷骨架之聚醯胺醯亞胺)等之改質聚醯胺醯亞胺。 Specific examples of polyimide resins include "Vylomax HR11NN" and "Vylomax HR16NN" manufactured by Toyobo Co., Ltd. In addition, specific examples of polyimide resins include Japanese Modified polyamides such as "KS9100" and "KS9300" (polysiloxane-based polyimide imide) manufactured by Tachihwa Chemical Co., Ltd.
聚醚碸樹脂之具體例,可列舉住友化學(股)製之「PES5003P」等。 Specific examples of polyether resin include "PES5003P" manufactured by Sumitomo Chemical Co., Ltd., etc.
聚碸樹脂之具體例子,可列舉Solvay Advanced Polymers(股)製之聚碸「P1700」、「P3500」等。 Specific examples of the polymer resin include polymer "P1700" and "P3500" manufactured by Solvay Advanced Polymers.
其中,熱可塑性樹脂較佳為苯氧基樹脂、聚乙烯縮醛樹脂。因此,較適合之一實施形態中,熱可塑性樹脂包含選自由苯氧基樹脂及聚乙烯縮醛樹脂所成群之1種以上。 Among them, the thermoplastic resin is preferably a phenoxy resin or a polyvinyl acetal resin. Therefore, in a more suitable embodiment, the thermoplastic resin contains one or more types selected from the group consisting of phenoxy resins and polyvinyl acetal resins.
本發明之樹脂組成物含有熱可塑性樹脂的情形,熱可塑性樹脂的含量,當樹脂成分為100質量%時,較佳為0.5質量%~15質量%、更佳為0.6質量%~12質量%、又更佳為0.7質量%~10質量%。 When the resin composition of the present invention contains a thermoplastic resin, the content of the thermoplastic resin is preferably 0.5% to 15% by mass, more preferably 0.6% to 12% by mass when the resin component is 100% by mass, It is more preferably 0.7% by mass to 10% by mass.
本發明之樹脂組成物,亦可再含有(H)難燃劑。難燃劑可列舉例如有機磷系難燃劑、含有有機系氮之磷化合物、氮化合物、矽氧系難燃劑、金屬氫氧化物等。難燃劑可1種單獨使用、或可併用2種以上。 The resin composition of the present invention may further contain (H) a flame retardant. Examples of the flame retardant include organic phosphorus flame retardants, phosphorus compounds containing organic nitrogen, nitrogen compounds, silica flame retardants, metal hydroxides, and the like. A flame retardant may be used individually by 1 type, or may use 2 or more types together.
難燃劑亦可使用市售品,可列舉例如三光(股)製之「HCA-HQ」、大八化學工業(股)製之「PX-200」等。 Commercial products can also be used as flame retardants, such as "HCA-HQ" manufactured by Sankoh Co., Ltd., "PX-200" manufactured by Dahachi Chemical Industry Co., Ltd., etc.
本發明之樹脂組成物含有難燃劑時,難燃劑的含量並無特別限定,樹脂成分為100質量%時,較佳為0.5質量%~20質量%,更佳為0.5質量%~15質量%,又更佳為0.5質量%~10質量%。 When the resin composition of the present invention contains a flame retardant, the content of the flame retardant is not particularly limited. When the resin content is 100% by mass, it is preferably 0.5% to 20% by mass, more preferably 0.5% to 15% by mass. %, and more preferably 0.5% by mass to 10% by mass.
本發明之樹脂組成物也可含有(I)有機填充材。有機填充材可使用形成印刷電路板之絕緣層時可使用之任意的有機填充材,可列舉例如橡膠粒子、聚醯胺微粒子、矽氧粒子等。 The resin composition of the present invention may also contain (I) an organic filler. As the organic filler, any organic filler that can be used when forming the insulating layer of a printed circuit board can be used, and examples thereof include rubber particles, polyamide particles, and silica particles.
橡膠粒子亦可使用市售品,可列舉例如陶氏化學日本(股)製之「EXL2655」、aica工業(股)製之「AC3816N」等。 Commercially available rubber particles can also be used, and examples include "EXL2655" manufactured by Dow Chemical Japan Co., Ltd., "AC3816N" manufactured by Aica Industrial Co., Ltd., and the like.
本發明之樹脂組成物含有有機填充材時,有機填充材之含量係當樹脂成分為100質量%時,較佳為0.1質量%~20質量%,更佳為0.2質量%~10質量%,又更佳為0.3質量%~5質量%,或0.5質量%~3質量%。 When the resin composition of the present invention contains an organic filler, the content of the organic filler is when the resin component is 100% by mass, preferably 0.1% by mass to 20% by mass, more preferably 0.2% by mass to 10% by mass, and More preferably, it is 0.3% by mass to 5% by mass, or 0.5% by mass to 3% by mass.
本發明之樹脂組成物必要時可再含有其他的添加劑,此其他的添加劑,可列舉例如有機銅化合物、有機鋅化合物及有機鈷化合物等之有機金屬化合物、及增黏劑、消泡劑、平坦劑、密著性賦予劑、及著色劑等之樹脂添加劑等。 The resin composition of the present invention may further contain other additives when necessary. The other additives may include, for example, organometallic compounds such as organic copper compounds, organic zinc compounds, and organic cobalt compounds, as well as thickeners, defoamers, and smoothing agents. Resin additives such as adhesives, adhesion-imparting agents, and coloring agents.
本發明之樹脂組成物可帶來介電正切低,且鍍敷密著性及底層密著性優異之絕緣層,又,相溶性、熔融黏度也良好。因此,本發明之樹脂組成物適合作為形成印刷電路板之絕緣層用之樹脂組成物(印刷電路板之絕緣層用樹脂組成物)使用,更適合作為形成印刷電路板之層間絕緣層用之樹脂組成物(印刷電路板之層間絕緣層用樹脂組成物)使用。又,本發明之樹脂組成物可帶來零件埋入性良好的絕緣層,故也可適用於印刷電路板為零件內藏電路板的情形。 The resin composition of the present invention can provide an insulating layer with low dielectric tangent, excellent plating adhesion and underlayer adhesion, and good compatibility and melt viscosity. Therefore, the resin composition of the present invention is suitable for use as a resin composition for forming an insulating layer of a printed circuit board (resin composition for an insulating layer of a printed circuit board), and is more suitable for use as a resin for forming an interlayer insulating layer of a printed circuit board The composition (resin composition for the interlayer insulating layer of a printed circuit board) is used. In addition, the resin composition of the present invention can provide an insulating layer with a good part embedding property, so it can also be applied to the case where the printed circuit board is a circuit board with a built-in part.
本發明之接著薄膜具有支撐體及設置於該支撐體上之含有本發明之樹脂組成物的樹脂組成物層。 The adhesive film of the present invention has a support and a resin composition layer containing the resin composition of the present invention provided on the support.
樹脂組成物層之厚度,較佳為900μm以下,更佳為800μm以下,又更佳為700μm以下,又再更佳為600μm以下。尤其是由於本發明可將鍍敷潛入深度壓低,故較佳為30μm以下,更佳為20μm以下,又更佳為10μm以下。樹脂組成物層之厚度之下限無特別限定,通常可為1μm以上、1.5μm以上、2μm以上等。 The thickness of the resin composition layer is preferably 900 μm or less, more preferably 800 μm or less, still more preferably 700 μm or less, and still more preferably 600 μm or less. In particular, since the present invention can reduce the plating depth, it is preferably 30 μm or less, more preferably 20 μm or less, and still more preferably 10 μm or less. The lower limit of the thickness of the resin composition layer is not particularly limited, and it can usually be 1 μm or more, 1.5 μm or more, 2 μm or more.
作為支撐體可舉例例如由塑膠材料所成之薄膜、金屬箔、脫模紙等,較佳為由塑膠材料所成之薄膜、金屬箔。 As the support, for example, a film made of plastic material, metal foil, release paper, etc., preferably a film made of plastic material, metal foil.
使用由塑膠材料所成之薄膜作為支撐體時,塑膠材料可列舉例如聚對苯二甲酸乙二酯(以下有時簡稱 「PET」)、聚萘二甲酸乙二酯(以下有時簡稱「PEN」)等之聚酯、聚碳酸酯(以下有時簡稱「PC」)、聚甲基丙烯酸甲酯(PMMA)等之丙烯酸、環狀聚烯烴、三乙醯基纖維素(TAC)、聚醚硫化物(PES)、聚醚酮、聚醯亞胺等。其中,較佳為聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯,特佳為廉價之聚對苯二甲酸乙二酯。 When a film made of a plastic material is used as a support, the plastic material can be, for example, polyethylene terephthalate (hereinafter sometimes referred to as "PET"), polyethylene naphthalate (hereinafter sometimes referred to as "PEN") and other polyesters, polycarbonate (hereinafter sometimes referred to as "PC"), polymethyl methacrylate (PMMA), etc. Acrylic acid, cyclic polyolefin, triacetyl cellulose (TAC), polyether sulfide (PES), polyether ketone, polyimide, etc. Among them, polyethylene terephthalate and polyethylene naphthalate are preferred, and inexpensive polyethylene terephthalate is particularly preferred.
使用金屬箔作為支撐體時,金屬箔可列舉例如銅箔、鋁箔等,較佳為銅箔。銅箔也可使用由銅之單金屬所成之箔,亦可使用銅與其他金屬(例如錫、鉻、銀、鎂、鎳、鋯、矽、鈦等)之合金所成之箔。 When a metal foil is used as a support, examples of the metal foil include copper foil and aluminum foil, and copper foil is preferred. Copper foil can also be a foil made of a single metal of copper, or a foil made of an alloy of copper and other metals (such as tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.).
支撐體可對於與樹脂組成物層接合之面施予霧面處理、電暈處理、抗靜電處理。 The support may be subjected to matte treatment, corona treatment, and antistatic treatment to the surface to be joined with the resin composition layer.
又,支撐體也可使用在與樹脂組成物層接合之面具有脫模層之附脫模層的支撐體。附脫模層之支撐體的脫模層所使用的脫模劑,可列舉例如選自由醇酸樹脂、聚烯烴樹脂、胺基甲酸酯樹脂、及矽氧樹脂所成群組之1種以上的脫模劑。附脫模層之支撐體可使用市售品,可列舉例如具有以醇酸樹脂系脫模劑為主成分之脫模層的PET薄膜,即Lintec(股)製之「SK-1」、「AL-5」、「AL-7」、東麗(股)製「LumirrorT6AM」等。 In addition, as the support, a support with a mold release layer having a mold release layer on the surface to be bonded to the resin composition layer can also be used. The mold release agent used in the mold release layer of the support with the mold release layer includes, for example, one or more selected from the group consisting of alkyd resins, polyolefin resins, urethane resins, and silicone resins. Release agent. Commercial products can be used for the support with a release layer. Examples include PET films with a release layer mainly composed of alkyd resin-based release agents, namely "SK-1" and "Lintec" made by Lintec. "AL-5", "AL-7", Toray's "LumirrorT6AM", etc.
支撐體的厚度雖並未特別限定,但較佳為5μm~75μm的範圍,更佳為10μm~60μm的範圍。又,使用附脫模層之支撐體的情形,附脫模層之支撐體全體的厚度在上述範圍為佳。 Although the thickness of the support is not particularly limited, it is preferably in the range of 5 μm to 75 μm, and more preferably in the range of 10 μm to 60 μm. In the case of using a support with a release layer, the thickness of the entire support with a release layer is preferably within the above-mentioned range.
接著薄膜例如調製將樹脂組成物溶解於有機溶劑的樹脂清漆,可藉由將此樹脂清漆使用模塗佈機等塗佈於支撐體上,使其乾燥而形成樹脂組成物層來製造。 The film is then prepared by, for example, preparing a resin varnish in which a resin composition is dissolved in an organic solvent, and it can be manufactured by coating this resin varnish on a support using a die coater or the like, and drying it to form a resin composition layer.
有機溶劑可列舉例如丙酮、甲基乙基酮(MEK)及環己酮等之酮類、乙酸乙酯、乙酸丁酯、溶纖劑乙酸酯、丙二醇單甲醚乙酸酯及卡必醇乙酸酯等之乙酸酯類、溶纖劑及丁基卡必醇等之卡必醇類、甲苯及二甲苯等之芳香族烴類、二甲基甲醯胺、二甲基乙醯胺(DMAc)及N-甲基吡咯烷酮等之醯胺系溶劑等。有機溶劑可1種單獨使用,亦可組合2種以上使用。 Examples of organic solvents include ketones such as acetone, methyl ethyl ketone (MEK) and cyclohexanone, ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether acetate, and carbitol Acetates such as acetate, cellosolve and carbitols such as butyl carbitol, aromatic hydrocarbons such as toluene and xylene, dimethylformamide, dimethylacetamide ( Amine-based solvents such as DMAc) and N-methylpyrrolidone. An organic solvent may be used individually by 1 type, and may be used in combination of 2 or more types.
乾燥可藉由加熱、吹送熱風等之習知的方法來實施。乾燥條件雖並未特別限定,但樹脂組成物層中之有機溶劑的含量成為10質量%以下,較佳為成為5質量%以下進行乾燥。因樹脂清漆中之有機溶劑的沸點而異,但例如使用包含30質量%~60質量%之有機溶劑的樹脂清漆時,藉由在50℃~150℃下乾燥3分鐘~10分鐘,可形成樹脂組成物層。 Drying can be performed by conventional methods such as heating and blowing hot air. Although the drying conditions are not particularly limited, the content of the organic solvent in the resin composition layer is 10% by mass or less, preferably 5% by mass or less for drying. It varies with the boiling point of the organic solvent in the resin varnish, but for example, when a resin varnish containing 30% to 60% by mass of organic solvent is used, the resin can be formed by drying at 50°C to 150°C for 3 minutes to 10 minutes Composition layer.
在接著薄膜中,在未與樹脂組成物層之支撐體接合的面(亦即,與支撐體相反側的面)中,可進一步層合依照支撐體的保護薄膜。保護薄膜的厚度無特別限定者,例如為1μm~40μm。藉由層合保護薄膜,可防止對樹脂組成物層之表面之塵埃等之附著或傷痕。接著薄膜可捲繞成捲筒狀來保存。接著薄膜具有保護薄膜的情形,可藉由剝離保護薄膜來使用。 In the adhesive film, a protective film conforming to the support may be further laminated on the surface that is not bonded to the support of the resin composition layer (that is, the surface on the opposite side to the support). The thickness of the protective film is not particularly limited, and is, for example, 1 μm to 40 μm. By laminating the protective film, it is possible to prevent the adhesion or scars of dust on the surface of the resin composition layer. The film can then be wound into a roll for storage. When the next film has a protective film, it can be used by peeling off the protective film.
接著薄膜中之樹脂組成物層(或樹脂組成物)之最低熔融黏度,從樹脂組成物層即使薄也安定維持厚度的觀點,較佳為1000poise以上,更佳為1500poise以上,又更佳為2000poise以上。最低熔融黏度之上限,從得到良好的電路埋入性的觀點,較佳為12000poise以下,更佳為10000poise以下,又更佳為8000poise以下、5000poise以下。 The lowest melt viscosity of the resin composition layer (or resin composition) in the film, from the viewpoint of maintaining the thickness of the resin composition layer even if it is thin, is preferably 1000 poise or more, more preferably 1500 poise or more, and even more preferably 2000 poise above. The upper limit of the minimum melt viscosity is preferably 12,000 poise or less, more preferably 10,000 poise or less, and still more preferably 8,000 poise or less and 5000 poise or less from the viewpoint of obtaining good circuit embedding.
樹脂組成物層之最低熔融黏度係指樹脂組成物層之樹脂產生熔融時,樹脂組成物層所呈現之最低的黏度。詳細而言,以一定之昇溫速度加熱樹脂組成物層使樹脂熔融時,初期階段熔融黏度伴隨溫度上升而下降,然後,當超過某種程度時,與溫度上升一起熔融黏度上升。最低熔融黏度係指這種極小點的熔融黏度。樹脂組成物層之最低熔融黏度,可使用動態黏彈性法測定,例如可依後述<樹脂組成物層之最低熔融黏度的測量>所記載的方法測量。 The lowest melt viscosity of the resin composition layer refers to the lowest viscosity exhibited by the resin composition layer when the resin of the resin composition layer is melted. Specifically, when the resin composition layer is heated at a constant temperature increase rate to melt the resin, the melt viscosity decreases with the temperature increase in the initial stage, and then, when the temperature exceeds a certain level, the melt viscosity increases along with the temperature increase. The minimum melt viscosity refers to the minimum melt viscosity. The minimum melt viscosity of the resin composition layer can be measured using a dynamic viscoelastic method, for example, it can be measured according to the method described in the below-mentioned <Measurement of the minimum melt viscosity of the resin composition layer>.
本發明之接著薄膜中之樹脂組成物層(或樹脂組成物)顯示優異之相溶性。亦即,本發明之接著薄膜中之樹脂組成物層(或樹脂組成物)不會析出50μm以上的粗粒。相溶性可藉由後述之<相溶性之評價>所記載的方法測量。 The resin composition layer (or resin composition) in the adhesive film of the present invention exhibits excellent compatibility. That is, the resin composition layer (or resin composition) in the adhesive film of the present invention does not precipitate coarse particles of 50 μm or more. Compatibility can be measured by the method described in the below-mentioned "Evaluation of Compatibility".
使用本發明之接著薄膜(或樹脂組成物)形成的絕緣層顯示低的介電正切。從防止高頻下之發熱、降低信號延遲及信號雜訊的觀點,介電正切較佳為0.010以下, 更佳為0.009以下,又更佳為0.008以下、0.007以下、0.006以下、或0.005以下。介電正切之下限越低越佳,但是通常可為0.001以上等。介電正切可藉由後述之<介電正切之評價>所記載的方法測量。 The insulating layer formed using the adhesive film (or resin composition) of the present invention exhibits a low dielectric tangent. From the viewpoint of preventing heat generation at high frequencies and reducing signal delay and signal noise, the dielectric tangent is preferably 0.010 or less. It is more preferably 0.009 or less, still more preferably 0.008 or less, 0.007 or less, 0.006 or less, or 0.005 or less. The lower the lower limit of the dielectric tangent, the better, but it can usually be 0.001 or more. The dielectric tangent can be measured by the method described in the below-mentioned "Evaluation of Dielectric Tangent".
使用本發明之接著薄膜(或樹脂組成物)形成的絕緣層,顯示良好的鍍敷密著性。亦即,帶來顯示良好鍍敷剝離強度的絕緣層。鍍敷剝離強度,較佳為1.5kgf/cm以下,更佳為1kgf/cm以下,又更佳為0.5kgf/cm以下。上限可為0.1kgf/cm以上等。鍍敷剝離強度之評價,可藉由後述之[鍍敷密著性之測量]所記載的方法測量。 The insulating layer formed using the adhesive film (or resin composition) of the present invention exhibits good plating adhesion. That is, it brings about an insulating layer showing good plating peel strength. The plating peel strength is preferably 1.5 kgf/cm or less, more preferably 1 kgf/cm or less, and still more preferably 0.5 kgf/cm or less. The upper limit may be 0.1 kgf/cm or more. The evaluation of the plating peel strength can be measured by the method described in [Measurement of Plating Adhesion] described later.
使用本發明之接著薄膜(或樹脂組成物)形成的絕緣層,顯示良好的底層密著性。亦即,帶來顯示良好之底層剝離強度的絕緣層。底層剝離強度較佳為1.5kgf/cm以下,更佳為1kgf/cm以下,又更佳為0.5kgf/cm以下。上限可為0.1kgf/cm以上等。底層密著性之評價,可藉由後述之[底層密著性之測量]所記載的方法測量。 The insulating layer formed using the adhesive film (or resin composition) of the present invention exhibits good adhesion to the underlayer. That is, it brings about an insulating layer showing good peel strength of the bottom layer. The peel strength of the bottom layer is preferably 1.5 kgf/cm or less, more preferably 1 kgf/cm or less, and still more preferably 0.5 kgf/cm or less. The upper limit may be 0.1 kgf/cm or more. The evaluation of the adhesion of the bottom layer can be measured by the method described in [Measurement of the adhesion of the bottom layer] described later.
使用本發明之樹脂組成物可形成預浸體。使薄片狀纖維基材含浸本發明之樹脂組成物可形成預浸體。因此,一實施形態中,本發明之預浸體包含薄片狀纖維基材及該薄片狀纖維基材所含浸之本發明之樹脂組成物。 The resin composition of the present invention can be used to form a prepreg. A prepreg can be formed by impregnating a sheet-like fibrous substrate with the resin composition of the present invention. Therefore, in one embodiment, the prepreg of the present invention includes a sheet-like fibrous base material and the resin composition of the present invention in which the sheet-like fibrous base material is impregnated.
預浸體所使用之薄片狀纖維基材並未特別限定,可使用作為玻璃布、芳香族聚醯胺不織布、液晶聚合物不織布等之預浸體用基材常用者。從印刷電路板之薄型化的觀點,薄片狀纖維基材的厚度,較佳為900μm以 下,更佳為800μm以下,又更佳為700μm以下,又再更佳為600μm以下。尤其是由於本發明可將鍍敷潛入深度壓低,故較佳為30μm以下,更佳為20μm以下,又更佳為10μm以下。薄片狀纖維基材的厚度之下限無特別限定,通常可為1μm以上、1.5μm以上、2μm以上等。 The sheet-like fibrous substrate used for the prepreg is not particularly limited, and those commonly used as substrates for prepregs such as glass cloth, aromatic polyamide nonwoven fabric, liquid crystal polymer nonwoven fabric, and the like can be used. From the viewpoint of thinning of the printed circuit board, the thickness of the sheet-like fiber substrate is preferably 900 μm or less Below, it is more preferably 800 μm or less, still more preferably 700 μm or less, and still more preferably 600 μm or less. In particular, since the present invention can reduce the plating depth, it is preferably 30 μm or less, more preferably 20 μm or less, and still more preferably 10 μm or less. The lower limit of the thickness of the sheet-like fibrous base material is not particularly limited, but it can usually be 1 μm or more, 1.5 μm or more, 2 μm or more.
預浸體可藉由熱熔法、溶劑法等之習知方法來製造。 The prepreg can be manufactured by a conventional method such as a hot melt method and a solvent method.
預浸體的厚度可與上述接著薄膜中之樹脂組成物層相同的範圍。 The thickness of the prepreg may be in the same range as the resin composition layer in the adhesive film described above.
本發明之印刷電路板包含藉由本發明之樹脂組成物之硬化物而形成的絕緣層。 The printed circuit board of the present invention includes an insulating layer formed by a cured product of the resin composition of the present invention.
詳細而言,本發明之印刷電路板,可藉由使用上述接著薄膜,包含下述(I)及(II)之步驟的方法來製造。 In detail, the printed circuit board of the present invention can be manufactured by a method including the following steps (I) and (II) using the adhesive film described above.
(I)在內層基板上,使該接著薄膜之樹脂組成物層與內層基板接合,以進行層合接著薄膜的步驟,(II)將樹脂組成物層熱硬化形成絕緣層的步驟。 (I) A step of bonding the resin composition layer of the adhesive film to the inner substrate on the inner layer substrate to laminate the adhesive film, and (II) the step of thermosetting the resin composition layer to form an insulating layer.
步驟(I)所使用的「內層基板」主要係指玻璃環氧基板、金屬基板、聚酯基板、聚醯亞胺基板、BT樹脂基板、熱硬化型聚苯醚基板等之基板、或該基板之單面或兩面形成有經圖型加工之導體層(電路)的電路基板。又,製造印刷電路板時,此外,應形成絕緣層及/或導體 層之中間製造物的內層電路基板也包含於本發明的「內層基板」。印刷電路板為零件內藏電路板的情形,使用內藏零件的內層基板即可。 The "inner substrate" used in step (I) mainly refers to substrates such as glass epoxy substrates, metal substrates, polyester substrates, polyimide substrates, BT resin substrates, thermosetting polyphenylene ether substrates, etc., or the A circuit substrate with a pattern-processed conductor layer (circuit) formed on one or both sides of the substrate. Also, when manufacturing printed circuit boards, in addition, insulating layers and/or conductors should be formed The inner layer circuit substrate of the intermediate product of the layer is also included in the "inner layer substrate" of the present invention. When the printed circuit board is a circuit board with a built-in part, it is sufficient to use an inner-layer substrate with a built-in part.
內層基板與接著薄膜之層合,例如可藉由自支撐體側將接著薄膜加熱壓接於內層基板來進行。將接著薄膜加熱壓接於內層基板的構件(以下亦稱為「加熱壓接構件」),可列舉例如經加熱之金屬板(SUS鏡板等)或金屬滾筒(SUS滾筒)等。又,並非將加熱壓接構件直接壓製(press)於接著薄膜上,而是經由耐熱橡膠等之彈性材,使接著薄膜充分追隨於內層基板之表面凹凸來進行壓製為佳。 The lamination of the inner substrate and the adhesive film can be performed, for example, by heating and compressing the adhesive film to the inner substrate from the support side. The member for heat-compressing the adhesive film to the inner substrate (hereinafter also referred to as "heat-compression bonding member") includes, for example, a heated metal plate (SUS mirror plate, etc.) or metal roller (SUS roller). In addition, instead of pressing the heating and pressing member directly on the adhesive film, it is better to press the adhesive film to fully follow the surface irregularities of the inner substrate through an elastic material such as heat-resistant rubber.
內層基板與接著薄膜之層合,可藉由真空層合法實施。真空層合法中,加熱壓接溫度,較佳為60℃~160℃,更佳為80℃~140℃之範圍,加熱壓接壓力,較佳為0.098MPa~1.77MPa,更佳為0.29MPa~1.47MPa之範圍,加熱壓接時間,較佳為20秒鐘~400秒鐘,更佳為30秒鐘~300秒鐘之範圍。層合較佳為在壓力26.7hPa以下的減壓條件下實施。 The lamination of the inner substrate and the adhesive film can be implemented by a vacuum lamination method. In the vacuum lamination method, the heating and pressing temperature is preferably 60°C to 160°C, more preferably in the range of 80°C to 140°C, and the heating and pressing pressure is preferably 0.098MPa to 1.77MPa, more preferably 0.29MPa to In the range of 1.47MPa, the heating and crimping time is preferably 20 seconds to 400 seconds, more preferably 30 seconds to 300 seconds. The lamination is preferably carried out under a reduced pressure condition of a pressure of 26.7 hPa or less.
層合可藉由市售之真空層合機來進行。市售之真空層合機,可列舉例如(股)名機製作所製之真空加壓式層合機、nikko-materials(股)製之真空塗佈機等。 The lamination can be performed by a commercially available vacuum laminator. Commercially available vacuum laminators include, for example, a vacuum pressure laminator manufactured by Meiji Seisakusho Co., Ltd., and a vacuum coater manufactured by Nikko-Materials Co., Ltd., and the like.
層合後,亦可藉由於常壓下(大氣壓下),例如將加熱壓接構件自支撐體側進行壓製,經層合後之接著薄膜進行平滑化處理。平滑化處理之壓製條件,可為與上述 層合之加熱壓接條件相同的條件。平滑化處理可藉由市售之層合機進行。又,層合與平滑化處理,亦可使用上述市售之真空層合機連續地進行。 After lamination, under normal pressure (under atmospheric pressure), for example, the heating and pressing member is pressed from the support side, and the subsequent film after lamination is smoothed. The suppression conditions of the smoothing treatment can be the same as the above The heating and pressing conditions of the lamination are the same. The smoothing treatment can be performed by a commercially available laminator. In addition, lamination and smoothing can also be performed continuously using the above-mentioned commercially available vacuum laminator.
支撐體可於步驟(I)與步驟(II)之間去除,亦可於步驟(II)之後去除。 The support can be removed between step (I) and step (II), and can also be removed after step (II).
步驟(II)中,使樹脂組成物層熱硬化而形成絕緣層。 In step (II), the resin composition layer is thermally cured to form an insulating layer.
樹脂組成物層之熱硬化條件無特別限定,可使用形成印刷電路板之絕緣層時通常採用的條件。 The thermosetting conditions of the resin composition layer are not particularly limited, and conditions generally used when forming the insulating layer of a printed circuit board can be used.
例如,樹脂組成物層之熱硬化條件,也因樹脂組成物之種類等而異,但是硬化溫度可為120℃~240℃之範圍(較佳為150℃~220℃之範圍、更佳為170℃~200℃之範圍),硬化時間可為5分鐘~120分鐘之範圍(較佳為10分鐘~100分鐘、更佳為15分鐘~90分鐘)。 For example, the thermal curing conditions of the resin composition layer also vary depending on the type of resin composition, etc., but the curing temperature can be in the range of 120°C to 240°C (preferably in the range of 150°C to 220°C, more preferably 170 ℃~200℃), the curing time can be in the range of 5 minutes to 120 minutes (preferably 10 minutes to 100 minutes, more preferably 15 minutes to 90 minutes).
使樹脂組成物層熱硬化之前,也可將樹脂組成物層以低於硬化溫度的溫度進行預備加熱。例如,使樹脂組成物層熱硬化之前,可以50℃以上、未達120℃(較佳為60℃以上110℃以下、更佳為70℃以上100℃以下)的溫度,將樹脂組成物層預備加熱5分鐘以上(較佳為5分鐘~150分鐘、更佳為15分鐘~120分鐘)。 Before the resin composition layer is thermally cured, the resin composition layer may be preheated at a temperature lower than the curing temperature. For example, before the resin composition layer is thermally cured, the resin composition layer may be prepared at a temperature of 50°C or higher but not 120°C (preferably 60°C or higher and 110°C or lower, more preferably 70°C or higher and 100°C or lower). Heating for more than 5 minutes (preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes).
於製造印刷電路板時,亦可進一步實施(III)於絕緣層開孔的步驟、(IV)將絕緣層粗化處理的步驟、(V)形成導體層的步驟之至少任一步驟。此等之步驟(III)至(V)可依照印刷電路板製造所用之所屬技術領域中具有通 常知識者公知的各種方法來實施。又,於步驟(II)之後去除支撐體時,該支撐體之去除,可於步驟(II)與步驟(III)之間、步驟(III)與步驟(IV)之間、或步驟(IV)與步驟(V)之間實施。 When manufacturing a printed circuit board, at least any one of (III) a step of opening a hole in the insulating layer, (IV) a step of roughening the insulating layer, and (V) a step of forming a conductor layer may be further implemented. These steps (III) to (V) can be in accordance with the technical field used in the manufacture of printed circuit boards. It can be implemented in various ways known to the common knowledgeable person. In addition, when the support is removed after step (II), the removal of the support can be between step (II) and step (III), step (III) and step (IV), or step (IV) Implemented between step (V).
其他之實施形態中,本發明之印刷電路板可使用上述預浸體來製造。製造方法基本上與使用接著薄膜的情形同樣。 In other embodiments, the printed circuit board of the present invention can be manufactured using the above-mentioned prepreg. The manufacturing method is basically the same as in the case of using an adhesive film.
步驟(III)為於絕緣層開孔的步驟,藉此可於絕緣層形成導通孔(via hole)、通孔(through hole)等之孔。步驟(III)可依照絕緣層之形成所使用的樹脂組成物之組成等,例如使用鑽頭、雷射、電漿等來實施。孔之尺寸或形狀,可依印刷電路板之設計來適當決定。 Step (III) is a step of making holes in the insulating layer, whereby holes such as via holes and through holes can be formed in the insulating layer. Step (III) can be implemented in accordance with the composition of the resin composition used in the formation of the insulating layer, for example, using a drill, a laser, and a plasma. The size or shape of the hole can be appropriately determined according to the design of the printed circuit board.
步驟(IV)為將絕緣層粗化處理的步驟。粗化處理之順序、條件無特別限定,可採用形成印刷電路板之絕緣層時通常所使用的公知順序、條件。例如,可依序實施利用膨潤液之膨潤處理、以氧化劑之粗化處理、以中和液之中和處理,將絕緣層進行粗化處理。膨潤液無特別限定,可列舉鹼溶液、界面活性劑溶液等,較佳為鹼溶液,該鹼溶液更佳為氫氧化鈉溶液、氫氧化鉀溶液。市售之膨潤液,可列舉例如Atotech Japan(股)製之「Swelling Dip Securiganth P」、「Swelling Dip Securiganth SBU」等。藉由膨潤液之膨潤處理,並無特別限定,例如可藉由將絕緣層於30℃~90℃之膨潤液中浸漬1分鐘~20分鐘來進行。從將絕緣層之樹脂的膨潤抑制在適度水準的觀點,較 佳為使硬化體於40℃~80℃之膨潤液中浸漬5分鐘~15分鐘。氧化劑並無特別限定,可列舉例如於氫氧化鈉之水溶液中溶解有過錳酸鉀或過錳酸鈉的鹼性過錳酸溶液。藉由鹼性過錳酸溶液等之氧化劑的粗化處理,較佳為將絕緣層於加熱至60℃~80℃之氧化劑溶液中浸漬10分鐘~30分鐘來進行。又,鹼性過錳酸溶液中之過錳酸鹽的濃度較佳為5質量%~10質量%。市售之氧化劑可列舉例如Atotech Japan(股)製之「Concentrate Compact CP」、「Dosing Solution Securiganth P」等之鹼性過錳酸溶液。又,中和液較佳為酸性之水溶液,市售品可列舉例如Atotech Japan(股)製之「Reduction solution Securiganth P」。以中和液之處理,可藉由將以氧化劑進行了粗化處理的處理面於30℃~80℃之中和液中浸漬5分鐘~30分鐘來進行。由作業性等之觀點,較佳為將以氧化劑進行了粗化處理的對象物,於40℃~70℃之中和液中浸漬5分鐘~20分鐘的方法。 Step (IV) is a step of roughening the insulating layer. The order and conditions of the roughening treatment are not particularly limited, and a known order and conditions generally used when forming the insulating layer of a printed circuit board can be adopted. For example, a swelling treatment with a swelling liquid, a roughening treatment with an oxidizing agent, and a neutralization treatment with a neutralization liquid can be carried out in order to roughen the insulating layer. The swelling liquid is not particularly limited, and an alkali solution, a surfactant solution, etc. may be mentioned, and an alkali solution is preferred, and the alkali solution is more preferably a sodium hydroxide solution or a potassium hydroxide solution. Examples of commercially available swelling fluids include "Swelling Dip Securiganth P" and "Swelling Dip Securiganth SBU" manufactured by Atotech Japan. The swelling treatment by the swelling liquid is not particularly limited. For example, it can be performed by immersing the insulating layer in the swelling liquid at 30°C to 90°C for 1 minute to 20 minutes. From the viewpoint of suppressing the swelling of the resin of the insulating layer to an appropriate level, it is more It is better to immerse the hardened body in a swelling solution at 40°C to 80°C for 5 minutes to 15 minutes. The oxidizing agent is not particularly limited, and, for example, an alkaline permanganic acid solution in which potassium permanganate or sodium permanganate is dissolved in an aqueous solution of sodium hydroxide can be mentioned. The roughening treatment by an oxidizing agent such as an alkaline permanganic acid solution is preferably performed by immersing the insulating layer in an oxidizing agent solution heated to 60°C to 80°C for 10 minutes to 30 minutes. In addition, the concentration of permanganate in the alkaline permanganic acid solution is preferably 5% by mass to 10% by mass. Commercially available oxidants include, for example, alkaline permanganic acid solutions such as "Concentrate Compact CP" and "Dosing Solution Securiganth P" manufactured by Atotech Japan. In addition, the neutralization liquid is preferably an acidic aqueous solution, and commercially available products include "Reduction solution Securiganth P" manufactured by Atotech Japan Co., Ltd., for example. The treatment with the neutralization solution can be carried out by immersing the treated surface roughened with an oxidizing agent in a neutralization solution at 30°C to 80°C for 5 minutes to 30 minutes. From the viewpoint of workability and the like, a method of immersing an object roughened with an oxidizing agent in a neutral solution at 40°C to 70°C for 5 minutes to 20 minutes is preferred.
一實施形態中,粗化處理後之絕緣層表面的算術平均粗糙度(Ra),較佳為280nm以下,更佳為250nm以下,又更佳為200nm以下、140nm以下、130nm以下、120nm以下、110nm以下、100nm以下、95nm以下、或90nm以下。Ra值之下限無特別限定,較佳為0.5nm以上,更佳為1nm以上。絕緣層表面之算術平均粗糙度(Ra)可使用非接觸型表面粗糙度計測量。非接觸型表面粗糙度計之具體例,可列舉Veeco Instruments公司製之「WYKO NT3300」。 In one embodiment, the arithmetic average roughness (Ra) of the insulating layer surface after roughening is preferably 280nm or less, more preferably 250nm or less, and still more preferably 200nm or less, 140nm or less, 130nm or less, 120nm or less, 110nm or less, 100nm or less, 95nm or less, or 90nm or less. The lower limit of the Ra value is not particularly limited, but is preferably 0.5 nm or more, and more preferably 1 nm or more. The arithmetic average roughness (Ra) of the insulating layer surface can be measured with a non-contact surface roughness meter. Specific examples of non-contact surface roughness meters include "WYKO" manufactured by Veeco Instruments NT3300".
步驟(V)為形成導體層的步驟。 Step (V) is a step of forming a conductor layer.
導體層所使用之導體材料並無特別限定。較適合的實施形態中,導體層含有選自由金、鉑、鈀、銀、銅、鋁、鈷、鉻、鋅、鎳、鈦、鎢、鐵、錫及銦所成群之1種以上的金屬。導體層可為單金屬層亦可為合金層,合金層可列舉例如由選自上述群之2種以上之金屬的合金(例如鎳.鉻合金、銅.鎳合金及銅.鈦合金)所形成之層。其中就導體層形成之泛用性、成本、圖型化之容易性等的觀點,較佳為鉻、鎳、鈦、鋁、鋅、金、鈀、銀或銅之單金屬層;或鎳.鉻合金、銅.鎳合金、銅.鈦合金之合金層,更佳為鉻、鎳、鈦、鋁、鋅、金、鈀、銀或銅之單金屬層或鎳.鉻合金之合金層,又更佳為銅之單金屬層。 The conductor material used in the conductor layer is not particularly limited. In a more suitable embodiment, the conductor layer contains one or more metals selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium . The conductor layer may be a single metal layer or an alloy layer. The alloy layer may be formed of, for example, an alloy of two or more metals selected from the above group (for example, nickel-chromium alloy, copper-nickel alloy, and copper-titanium alloy).的层。 The layer. Among them, in terms of the versatility, cost, and ease of patterning of the conductor layer formation, a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper; or nickel. Chrome alloy, copper. Nickel alloy, copper. The alloy layer of titanium alloy is more preferably a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper or nickel. The alloy layer of chromium alloy is more preferably a single metal layer of copper.
導體層可為單層構造、亦可為由不同種類之金屬或合金所成之單金屬層或層合有2層以上之合金層的複層構造。導體層為複層構造時,與絕緣層鄰接之層,較佳為鉻、鋅或鈦之單金屬層,或鎳.鉻合金之合金層。 The conductor layer can be a single-layer structure, a single metal layer made of different types of metals or alloys, or a multiple-layer structure in which two or more alloy layers are laminated. When the conductor layer is a multi-layer structure, the layer adjacent to the insulating layer is preferably a single metal layer of chromium, zinc, or titanium, or nickel. Alloy layer of chromium alloy.
導體層之厚度,雖亦依所期望之印刷電路板之設計而異,但一般為3μm~35μm,較佳為5μm~30μm。 Although the thickness of the conductor layer varies depending on the desired printed circuit board design, it is generally 3 μm to 35 μm, preferably 5 μm to 30 μm.
一實施形態中,導體層可藉由鍍敷而形成。例如,可藉由半加成法、全加成法等之以往公知的技術,對絕緣層之表面鍍敷,形成具有所期望之配線圖型的導體層。以下,顯示以半加成法形成導體層之例。 In one embodiment, the conductive layer can be formed by plating. For example, the surface of the insulating layer can be plated by a conventionally known technique such as a semi-additive method and a full-additive method to form a conductor layer having a desired wiring pattern. The following shows an example of forming the conductor layer by the semi-additive method.
首先,於絕緣層之表面,藉由無電電鍍(Electroless plating)形成鍍敷防護層(shield layer)。接著,於形成之鍍敷防護層上,形成對應於所期望之配線圖型,使鍍敷防護層之一部分露出的遮罩圖型。露出之鍍敷防護層上,藉由電鍍形成金屬層後,去除遮罩圖型。然後,藉由蝕刻等而去除不要的鍍敷防護層,可形成具有所期望之配線圖型的導體層。 First, a shield layer is formed on the surface of the insulating layer by electroless plating. Next, on the formed plating protection layer, a mask pattern corresponding to the desired wiring pattern is formed so that a part of the plating protection layer is exposed. After the metal layer is formed by electroplating on the exposed plating protection layer, the mask pattern is removed. Then, by removing the unnecessary plating protection layer by etching or the like, a conductor layer having a desired wiring pattern can be formed.
本發明之半導體裝置包含印刷電路板。本發明之半導體裝置可使用本發明之印刷電路板來製造。 The semiconductor device of the present invention includes a printed circuit board. The semiconductor device of the present invention can be manufactured using the printed circuit board of the present invention.
半導體裝置可列舉供於電氣製品(例如電腦、手機、數位相機及電視等)及交通工具(例如摩托車、汽車、電車、船舶及飛機等)等之各種半導體裝置。 Semiconductor devices include various semiconductor devices used in electrical products (such as computers, mobile phones, digital cameras, televisions, etc.) and vehicles (such as motorcycles, automobiles, trams, ships, and airplanes, etc.).
本發明之半導體裝置可藉由於印刷電路板之導通處實裝零件(半導體晶片)來製造。「導通處」係指「傳達在印刷電路板之電氣信號之處」,該場所可為表面,亦可為被埋入之處皆無妨。又,半導體晶片若為以半導體作為材料之電氣電路元件則無特別限定。 The semiconductor device of the present invention can be manufactured by mounting parts (semiconductor chips) due to the conduction of the printed circuit board. "Condition" refers to "the place where electrical signals are transmitted on the printed circuit board". The place can be a surface or a place where it is buried. In addition, the semiconductor wafer is not particularly limited as long as it is an electrical circuit element using a semiconductor as a material.
製造本發明之半導體裝置時之半導體晶片的實裝方法,只要是半導體晶片能有效地發揮功能時,即無特別限定,具體而言,可列舉引線接合實裝方法、覆晶實裝方法、以無凸塊增層(BBUL)之實裝方法、以各向異性導電薄膜(ACF)之實裝方法、以非導電性薄膜(NCF)之實裝 方法等。在此,「以無凸塊增層(BBUL)之實裝方法」係指「將半導體晶片直接埋入於印刷電路板的凹部,使半導體晶片與印刷電路板上之配線連接的實裝方法」。 The method of mounting a semiconductor wafer when manufacturing the semiconductor device of the present invention is not particularly limited as long as the semiconductor wafer can effectively function. Specifically, a wire bonding mounting method, a flip chip mounting method, and Bumpless build-up layer (BBUL) mounting method, anisotropic conductive film (ACF) mounting method, non-conductive film (NCF) mounting method Methods etc. Here, "the mounting method with bumpless build-up (BBUL)" refers to "the mounting method in which the semiconductor chip is directly embedded in the recess of the printed circuit board and the semiconductor chip is connected to the wiring on the printed circuit board" .
以下,藉由實施例具體說明本發明,但本發明並不限定於此等之實施例。又,在以下記載中,「份」及「%」在無另外明示時,分別表示「質量份」及「質量%」。 Hereinafter, the present invention will be described in detail with examples, but the present invention is not limited to these examples. In addition, in the following description, "parts" and "%" indicate "parts by mass" and "% by mass", unless otherwise specified.
使聯苯型環氧樹脂(環氧當量269、日本化藥(股)製「NC3000」)40份在邊攪拌下邊加熱溶解於溶劑石油腦25份中,然後,冷卻至室溫。混合無機填充材((股)admatechs製「SO-C2」、平均粒徑0.5μm、每單位表面之碳量0.38mg/m2)330份,並以3輥混練分散。然後,混合活性酯系硬化劑(DIC(股)製「HPC-8000-65T」、活性基當量約223之不揮發分65質量%之甲苯溶液)92.3份、具有乙烯基之樹脂(三菱瓦斯化學(股)製「OPE-2St 2200」不揮發分60質量%之甲苯溶液)25份、茚香豆酮樹脂(日塗化學(股)製「H-100」)15份、作為硬化促進劑之4-二甲基胺基吡啶(DMAP)之5質量%的MEK溶液2份,再以旋轉混合機均勻分散,製作樹脂清漆1。 40 parts of biphenyl type epoxy resin (epoxy equivalent 269, "NC3000" manufactured by Nippon Kayaku Co., Ltd.) was heated and dissolved in 25 parts of solvent naphtha under stirring, and then cooled to room temperature. 330 parts of inorganic fillers ("SO-C2" manufactured by Admatechs, average particle size 0.5μm, carbon content per unit surface 0.38mg/m 2 ) were mixed, and kneaded and dispersed with 3 rolls. Then, 92.3 parts of an active ester curing agent ("HPC-8000-65T" made by DIC Co., Ltd., a toluene solution with an active group equivalent of about 223 and a non-volatile content of 65% by mass), and a vinyl resin (Mitsubishi Gas Chemical (Stock) 25 parts of OPE-2St 2200 non-volatile toluene solution of 60% by mass), 15 parts of nincoumarone resin (Nippon Chemical Co., Ltd. "H-100"), as a hardening accelerator 2 parts of a 5 mass% MEK solution of 4-dimethylaminopyridine (DMAP) was uniformly dispersed with a rotary mixer to produce a resin varnish 1.
使用模塗佈機將樹脂清漆1均勻塗佈於附醇酸樹脂系脫模處理之聚對苯二甲酸乙二酯薄膜(Lintec(股)製「AL-5」、厚度38μm)的脫模面上,使乾燥後之樹脂組成物層之厚度成為40μm,在80~110℃(平均95℃)下乾燥5分鐘,製作接著薄膜1。 Use a die coater to uniformly coat the resin varnish 1 on the mold release surface of a polyethylene terephthalate film (Lintec (stock) "AL-5", thickness 38μm)) with alkyd resin-based mold release treatment Above, the thickness of the resin composition layer after drying was set to 40 μm, and dried at 80 to 110° C. (average 95° C.) for 5 minutes to produce an adhesive film 1.
實施例1中,將具有乙烯基之樹脂(三菱瓦斯化學(股)製「OPE-2St 2200」不揮發分60質量%之甲苯溶液)變更為具有乙烯基之樹脂(三菱瓦斯化學(股)製「OPE-2St 1200」不揮發分60質量%之甲苯溶液)。除以上事項外,與實施例1同樣製作樹脂清漆2及接著薄膜2。 In Example 1, the resin with vinyl (manufactured by Mitsubishi Gas Chemical Co., Ltd. "OPE-2St 2200" with a non-volatile content of 60% by mass in toluene solution) was changed to a resin with vinyl (manufactured by Mitsubishi Gas Chemical Co., Ltd.) "OPE-2St 1200" a toluene solution with a non-volatile content of 60% by mass). Except for the above matters, the resin varnish 2 and the adhesive film 2 were produced in the same manner as in Example 1.
實施例1中,將茚香豆酮樹脂(日塗化學(股)製「H-100」)變更為茚香豆酮樹脂(日塗化學(股)製「V-120S」)。除以上事項外,與實施例1同樣製作樹脂清漆3及接著薄膜3。 In Example 1, indencoumarone resin ("H-100" manufactured by Nitto Chemical Co., Ltd.) was changed to indencoumarone resin ("V-120S" manufactured by Nitto Chemical Co., Ltd.). Except for the above matters, the resin varnish 3 and the adhesive film 3 were produced in the same manner as in Example 1.
實施例1中,將茚香豆酮樹脂(日塗化學(股)製「H-100」)變更為茚香豆酮樹脂(日塗化學(股)製「V-120」)。除以上事項外,與實施例1同樣製作樹脂清漆4及接著薄膜4。 In Example 1, indencoumarone resin ("H-100" manufactured by Nitto Chemical Co., Ltd.) was changed to indencoumarone resin ("V-120" manufactured by Nitto Chemical Co., Ltd.). Except for the above matters, the resin varnish 4 and the adhesive film 4 were produced in the same manner as in Example 1.
實施例1中,(1)具有乙烯基之樹脂(三菱瓦斯化學(股)製「OPE-2St 2200」不揮發分60質量%之甲苯溶液)25份變更為具有乙烯基之樹脂(三菱瓦斯化學(股)製「OPE-2St 2200」不揮發分60質量%之甲苯溶液)8.3份、及具有乙烯基之樹脂(三菱瓦斯化學(股)製「OPE-2St」不揮發分60質量%之甲苯溶液)16.7份,(2)茚香豆酮樹脂(日塗化學(股)製「H-100」)之調配量由15份變更為8份。 In Example 1, (1) 25 parts of resin with vinyl group (Mitsubishi Gas Chemical Co., Ltd. "OPE-2St 2200" non-volatile toluene solution with 60% by mass) was changed to resin with vinyl group (Mitsubishi Gas Chemical Co., Ltd.) 8.3 parts of "OPE-2St 2200" non-volatile toluene solution with 60% by mass produced by Mitsubishi Gas Chemical Co., Ltd.) and vinyl resin (Mitsubishi Gas Chemical Co., Ltd. "OPE-2St" with 60% by mass non-volatile toluene Solution) 16.7 parts, and (2) The blending amount of indencoumarone resin ("H-100" manufactured by Nitto Chemical Co., Ltd.) was changed from 15 parts to 8 parts.
除以上事項外,與實施例1同樣製作樹脂清漆5及接著薄膜5。 Except for the above matters, the resin varnish 5 and the adhesive film 5 were produced in the same manner as in Example 1.
實施例1中,(1)將具有乙烯基之樹脂(三菱瓦斯化學(股)製「OPE-2St 2200」不揮發分60質量%之甲苯溶液)之調配量由25份變更為16.7份,(2)將茚香豆酮樹脂(日塗化學(股)製「H-100」)之調配量由15份變更為25份。 In Example 1, (1) The compounding amount of the resin with vinyl (Mitsubishi Gas Chemical Co., Ltd. "OPE-2St 2200" non-volatile toluene solution of 60% by mass) was changed from 25 parts to 16.7 parts, ( 2) The blending amount of indencoumarone resin ("H-100" manufactured by Nitto Chemical Co., Ltd.) was changed from 15 parts to 25 parts.
除以上事項外,與實施例1同樣製作樹脂清漆6及接著薄膜6。 Except for the above matters, the resin varnish 6 and the adhesive film 6 were produced in the same manner as in Example 1.
實施例1中,(1)將具有乙烯基之樹脂(三菱瓦斯化學(股)製「OPE-2St 2200」不揮發分60質量%之甲苯溶液)之調配量由25份變更為50份,(2)將茚香豆酮樹脂(日塗化學(股)製「H-100」)之調配量由15份變更為2份。 In Example 1, (1) The compounding amount of the resin with vinyl (Mitsubishi Gas Chemical Co., Ltd. "OPE-2St 2200" non-volatile toluene solution of 60% by mass) was changed from 25 parts to 50 parts, ( 2) The compounding amount of the indencoumarone resin ("H-100" manufactured by Nitto Chemical Co., Ltd.) was changed from 15 parts to 2 parts.
除以上事項外,與實施例1同樣製作樹脂清漆7及接著薄膜7。 Except for the above matters, the resin varnish 7 and the adhesive film 7 were produced in the same manner as in Example 1.
實施例1中,(1)將具有乙烯基之樹脂(三菱瓦斯化學(股)製「OPE-2St 2200」不揮發分60質量%之甲苯溶液)之調配量由25份變更為8.3份,(2)將茚香豆酮樹脂(日塗化學(股)製「H-100」)之調配量由15份變更為34份。 In Example 1, (1) The compounding amount of resin with vinyl group (Mitsubishi Gas Chemical Co., Ltd. "OPE-2St 2200" non-volatile content 60% by mass toluene solution) was changed from 25 parts to 8.3 parts, ( 2) The blending amount of indencoumarone resin ("H-100" manufactured by Nitto Chemical Co., Ltd.) was changed from 15 parts to 34 parts.
除以上事項外,與實施例1同樣製作樹脂清漆8及接著薄膜8。 Except for the above matters, a resin varnish 8 and an adhesive film 8 were produced in the same manner as in Example 1.
將實施例及比較例製作之接著薄膜藉由以190℃熱硬化90分鐘,剝離支撐體,得到薄片狀之硬化物。將該硬化 物切成長度80mm、寬2mm,作為評價樣品。對於此評價樣品,藉由使用Agilent Technologies(Agilent Technologies)公司製HP8362B裝置之共振腔微擾法,在測量頻率5.8GHz、測量溫度23℃下測量介電正切。 The adhesive films produced in the Examples and Comparative Examples were thermally cured at 190°C for 90 minutes, and the support was peeled off to obtain a sheet-like cured product. Harden The product was cut into a length of 80 mm and a width of 2 mm, and used as an evaluation sample. For this evaluation sample, the dielectric tangent was measured at a measurement frequency of 5.8 GHz and a measurement temperature of 23° C. by the cavity perturbation method using HP8362B device manufactured by Agilent Technologies (Agilent Technologies).
使用動態黏彈性測定裝置((股)UBM製「Rheosol-G3000」),測量在實施例及比較例製作之接著薄膜之樹脂組成物層的熔融黏度。對於試料樹脂組成物1g,使用直徑18mm之平行板,自開始溫度60℃至200℃,以昇溫速度5℃/分鐘昇溫,測量溫度間隔2.5℃、振動數1Hz、變形1deg之測量條件下,測量動態黏彈性率,算出最低熔融黏度(poise)。 Using a dynamic viscoelasticity measuring device ("Rheosol-G3000" manufactured by UBM), the melt viscosity of the resin composition layer of the adhesive film produced in the Examples and Comparative Examples was measured. For 1g of the sample resin composition, use a parallel plate with a diameter of 18mm. From the starting temperature of 60°C to 200°C, the temperature rises at a temperature rise rate of 5°C/min. The measurement temperature interval is 2.5°C, the number of vibrations is 1Hz, and the deformation is 1deg. Dynamic viscoelasticity rate, calculate the lowest melt viscosity (poise).
使用顯微鏡(hirox(股)製「DIGITAL MICROSCOPE KH-8700」)觀察以實施例及比較例製作之接著薄膜之樹脂組成物層側,確認有無粗粒,依據以下基準評價。 Using a microscope ("DIGITAL MICROSCOPE KH-8700" manufactured by Hirox Co., Ltd.), the resin composition layer side of the adhesive film produced in the Examples and Comparative Examples was observed to confirm the presence or absence of coarse particles, and the evaluation was based on the following criteria.
○:接著薄膜之樹脂組成物層未析出50μm以上之粗粒。 ○: No coarse particles of 50 μm or more precipitated out of the resin composition layer of the adhesive film.
×:接著薄膜之樹脂組成物層有50μm以上之粗粒析出。 ×: Coarse particles of 50 μm or more are deposited on the resin composition layer of the film.
將形成有內層電路之玻璃布基材環氧樹脂兩面貼銅層合板(銅箔之厚度18μm、基板之厚度0.4mm、panasonic(股)製「R1515A」)的兩面浸漬於MEC(股)製「CZ8101」中,蝕刻1μm進行銅表面之粗化處理。 The glass cloth base epoxy resin double-sided copper laminate (copper foil thickness of 18μm, substrate thickness of 0.4mm, panasonic (stock) "R1515A") on both sides of the glass cloth substrate with inner circuit formed is immersed in MEC (stock) In "CZ8101", the copper surface is roughened by etching 1μm.
使用分批式真空加壓層合機(名機(股)製「MVLP-500」),使樹脂組成物層與內層電路基板接合的狀態,將實施例及比較例製作的接著薄膜層合處理於內層電路基板之兩面。層合處理係藉由減壓30秒鐘,使氣壓為13hPa以下後,在100℃、壓力0.74MPa下壓接30秒鐘來進行。 Using a batch-type vacuum pressure laminator (Meiji Co., Ltd. "MVLP-500"), the resin composition layer and the inner circuit board are bonded together, and the adhesive films produced in the examples and comparative examples are laminated Processed on both sides of the inner circuit board. The lamination process was performed by reducing the pressure for 30 seconds to make the air pressure 13 hPa or less, and then pressure bonding at 100° C. and a pressure of 0.74 MPa for 30 seconds.
由層合處理後之接著薄膜上,剝離支撐體的PET薄膜。接著,以80℃預備加熱30分鐘後,在170℃下將樹脂組成物層熱硬化30分鐘,在內層電路基板之兩面上形成硬化物(絕緣層)。 From the adhesive film after the lamination process, the PET film of the support is peeled off. Then, after preliminary heating at 80°C for 30 minutes, the resin composition layer was thermally cured at 170°C for 30 minutes to form a cured product (insulating layer) on both sides of the inner layer circuit board.
將在兩面上形成有硬化物之內層電路基板於膨潤液(Atotech Japan(股)製「Swelling Dip Securiganth P」、含有二乙二醇單丁醚之氫氧化鈉水溶液)中,在60℃下浸漬 10分鐘,接著於粗化液(atotech Japan(股)製「Concentrate Compact P」、過錳酸鉀濃度約6質量%、氫氧化鈉濃度約4質量%之水溶液)中,在80℃下浸漬20分鐘,最後,於中和液(Atotech Japan(股)製「Reduction solution Securiganth P」、硫酸羥基胺水溶液)中,40℃下浸漬5分鐘。接著,80℃下使乾燥30分鐘。 The inner layer circuit board with the hardened material formed on both sides is placed in a swelling solution ("Swelling Dip Securiganth P" manufactured by Atotech Japan Co., Ltd., sodium hydroxide aqueous solution containing diethylene glycol monobutyl ether) at 60°C Impregnation For 10 minutes, then immerse in a roughening solution (Atotech Japan Co., Ltd. "Concentrate Compact P", potassium permanganate concentration of about 6% by mass, sodium hydroxide concentration of about 4% by mass aqueous solution), and then immerse at 80 ℃ for 20 Finally, it was immersed in a neutralization solution ("Reduction solution Securiganth P" manufactured by Atotech Japan Co., Ltd., aqueous hydroxylamine sulfate solution) at 40°C for 5 minutes. Then, it was dried at 80°C for 30 minutes.
依據半加成法在硬化物之粗化面形成導體層。 According to the semi-additive method, a conductive layer is formed on the roughened surface of the hardened object.
亦即,將粗化處理後之基板於含有PdCl2之無電電鍍液中,以40℃浸漬5分鐘後,於無電銅鍍液中以25℃浸漬20分鐘。接著,在150℃加熱30分鐘,進行退火處理後,形成蝕刻阻劑,藉由蝕刻形成圖型。然後,進行硫酸銅電鍍,形成30μm厚度的導體層。以200℃進行60分鐘退火處理,得到評價基板。 That is, the roughened substrate is immersed in an electroless plating solution containing PdCl 2 at 40°C for 5 minutes, and then immersed in an electroless copper plating solution at 25°C for 20 minutes. Then, it is heated at 150° C. for 30 minutes, and an annealing treatment is performed to form an etching resist, and a pattern is formed by etching. Then, copper sulfate electroplating was performed to form a conductor layer with a thickness of 30 μm. The annealing treatment was performed at 200°C for 60 minutes to obtain an evaluation substrate.
評價基板之導體層上,施予寬10mm、長度100mm之部分的割劃,將此一端剝離,以挾具挾住,室溫(25℃)中,測量以50mm/分鐘的速度,往垂直方向拉剝離35mm時之荷重(kgf/cm),求剝離強度。測量係使用抗拉試驗機((股)TSE製之Autocom型試驗機「AC-50C-SL」)。 On the conductor layer of the evaluation substrate, apply a cut with a width of 10mm and a length of 100mm, peel off this end, and hold it with a clamp. At room temperature (25°C), measure at a speed of 50mm/min, and pull it in the vertical direction. The load at 35mm (kgf/cm) is used to determine the peel strength. The measurement system uses a tensile testing machine (Autocom type testing machine "AC-50C-SL" manufactured by TSE (Stock)).
將三井金屬礦山(股)製3EC-III(電場銅箔、35μm)之光澤面浸漬於MEC(股)製MECetchBOND CZ-8101中,對銅表面進行粗化處理(Ra值=1μm),施予防銹處理(CL8300)。此銅箔稱為CZ銅箔。進一步,以130℃之烤箱進行30分鐘加熱處理。 The glossy surface of 3EC-III (electric field copper foil, 35μm) manufactured by Mitsui Metals Mines Co., Ltd. is immersed in MECetchBOND CZ-8101 manufactured by MEC (stock), and the copper surface is roughened (Ra value = 1μm) to prevent Rust treatment (CL8300). This copper foil is called CZ copper foil. Further, heat treatment was performed in an oven at 130°C for 30 minutes.
進行與上述[鍍敷密著性之測量]之「(2)接著薄膜之層合處理」同樣的操作,準備將支撐體的PET薄膜剝離的基板。與上述[鍍敷密著性之測量]之「(2)接著薄膜之層合處理」同樣的條件,將3EC-III之CZ銅箔的處理面層合於該樹脂組成物層上。然後,以190℃、90分鐘的硬化條件,使樹脂組成物層硬化形成絕緣層,製作樣品。 The same operation as "(2) Adhesive film lamination process" of the above-mentioned [Measurement of plating adhesion] was performed to prepare a substrate from which the PET film of the support was peeled off. Laminate the treated surface of the 3EC-III CZ copper foil on the resin composition layer under the same conditions as the above-mentioned [Measurement of plating adhesion] "(2) Adhesive film lamination treatment". Then, the resin composition layer was cured under curing conditions of 190°C for 90 minutes to form an insulating layer, and a sample was produced.
將製作之樣品切斷成150×30mm的小片。小片的銅箔部分使用切割刀施予寬10mm、長度100mm之部分的割劃,將銅箔之一端剝離,以挾具((股)TSE製、Autocom型試驗機「AC-50C-SL」)挾住,使用Instron萬能試驗機,在室溫中,依據JIS C6481測量以50mm/分鐘的速度,往垂直方向拉剝離35mm時之荷重,作為「底層密著性」。 Cut the produced sample into small pieces of 150×30 mm. The small piece of copper foil is cut with a cutting knife on the part with a width of 10mm and a length of 100mm. One end of the copper foil is peeled off, and it is held by a clamp ((share) TSE, Autocom type testing machine "AC-50C-SL") , Using the Instron universal testing machine, at room temperature, in accordance with JIS C6481, measured at a speed of 50mm/min, the load when peeling 35mm in the vertical direction, as the "underlying adhesion".
表中,(A)成分之含量、(B)成分之含量、(C)成分之含量、及(D)成分之含量,表示樹脂成分為100質量%時之含量。 In the table, the content of the (A) component, the content of the (B) component, the content of the (C) component, and the content of the (D) component indicate the content when the resin component is 100% by mass.
由表可知,含有所定量之(D)成分,含有(C)成分的實施例1~6之相溶性高,且介電正切及熔融黏度優異,又鍍敷密著性及底層密著性也優異。 It can be seen from the table that the quantified (D) component and the (C) component of Examples 1 to 6 have high compatibility, excellent dielectric tangent and melt viscosity, as well as plating adhesion and underlayer adhesion. Excellent.
另外,得知(D)成分之含量多的比較例2之最低熔融黏度變低,且底層密著性相較於實施例1~6時,較差。 In addition, it was found that the lowest melt viscosity of Comparative Example 2 in which the content of the component (D) was large became low, and the adhesion of the primer layer was inferior to those of Examples 1 to 6.
又,(D)成分之含量少的比較例1之相溶性差,故接著薄膜有結晶析出,無法測量最低熔融黏度。又,因相溶性差,故無法形成絕緣層,無法測量介電正切、鍍敷密著性及底層密著性。 In addition, Comparative Example 1 with a small content of the component (D) had poor compatibility, so crystals precipitated in the film, and the lowest melt viscosity could not be measured. In addition, due to poor compatibility, an insulating layer could not be formed, and the dielectric tangent, plating adhesion, and underlayer adhesion could not be measured.
Claims (11)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016064640A JP6776577B2 (en) | 2016-03-28 | 2016-03-28 | Resin composition |
| JP2016-064640 | 2016-03-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201805324A TW201805324A (en) | 2018-02-16 |
| TWI745363B true TWI745363B (en) | 2021-11-11 |
Family
ID=59983725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106109202A TWI745363B (en) | 2016-03-28 | 2017-03-20 | Resin composition |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6776577B2 (en) |
| KR (2) | KR102325456B1 (en) |
| CN (1) | CN107236251B (en) |
| TW (1) | TWI745363B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6911806B2 (en) * | 2018-03-29 | 2021-07-28 | 味の素株式会社 | Resin composition, sheet-like laminated material, printed wiring board and semiconductor device |
| JP7076263B2 (en) * | 2018-03-30 | 2022-05-27 | 太陽インキ製造株式会社 | Curable resin compositions, dry films, cured products, and electronic components |
| TWI688607B (en) * | 2018-10-04 | 2020-03-21 | 台光電子材料股份有限公司 | Resin composition and articles made from it |
| JP7342358B2 (en) * | 2018-12-26 | 2023-09-12 | 住友ベークライト株式会社 | Resin compositions, resin films with carriers using the same, prepregs, laminates, printed wiring boards, and semiconductor devices |
| JP6946578B2 (en) * | 2019-02-05 | 2021-10-06 | 株式会社プリンテック | Resin composition and its manufacturing method |
| CN114174457B (en) * | 2019-08-06 | 2023-08-25 | 迪睿合株式会社 | Adhesive composition, thermosetting adhesive sheet, and printed wiring board |
| JP7512613B2 (en) * | 2020-03-03 | 2024-07-09 | 住友ベークライト株式会社 | Resin composition, carrier-attached resin film, prepreg, laminate, printed wiring board, and semiconductor device using the same |
| JP7581662B2 (en) * | 2020-06-01 | 2024-11-13 | 住友ベークライト株式会社 | Highly dielectric resin composition, carrier-attached resin film, prepreg, laminate, printed wiring board and semiconductor device each using the same |
| JP7356534B1 (en) * | 2022-03-30 | 2023-10-04 | 株式会社レゾナック | Adhesive film for semiconductors, dicing die bonding film, and method for manufacturing semiconductor devices |
| JP2025104829A (en) | 2023-12-28 | 2025-07-10 | 味の素株式会社 | resin composition |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159004A (en) * | 1988-11-18 | 1992-10-27 | Sumitomo Chemical Company, Limited | Thermoplastic resin composition |
| JP2014034580A (en) * | 2012-08-07 | 2014-02-24 | Ajinomoto Co Inc | Resin composition |
| JP2015004009A (en) * | 2013-06-21 | 2015-01-08 | 味の素株式会社 | Resin compositions |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02160858A (en) * | 1988-12-15 | 1990-06-20 | Sumitomo Chem Co Ltd | Thermoplastic resin composition |
| JPH05211251A (en) * | 1991-12-04 | 1993-08-20 | Nippon Steel Chem Co Ltd | Semiconductor sealing resin composite |
| JP2524453B2 (en) * | 1992-06-12 | 1996-08-14 | 住友ベークライト株式会社 | Thermosetting resin composition |
| JP2000309678A (en) * | 1999-02-22 | 2000-11-07 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP3695521B2 (en) | 2000-08-01 | 2005-09-14 | 信越化学工業株式会社 | Liquid epoxy resin composition and semiconductor device |
| JP6378533B2 (en) * | 2013-06-01 | 2018-08-22 | 日東電工株式会社 | Thermally conductive adhesive sheet |
| JP6452335B2 (en) | 2013-08-09 | 2019-01-16 | 日鉄ケミカル&マテリアル株式会社 | Epoxy resin composition and cured product thereof |
| JP6235969B2 (en) * | 2014-06-23 | 2017-11-22 | 京セラ株式会社 | Powdered resin composition for compression molding and resin-encapsulated semiconductor device |
-
2016
- 2016-03-28 JP JP2016064640A patent/JP6776577B2/en active Active
-
2017
- 2017-03-16 CN CN201710156156.2A patent/CN107236251B/en active Active
- 2017-03-20 TW TW106109202A patent/TWI745363B/en active
- 2017-03-24 KR KR1020170037418A patent/KR102325456B1/en active Active
-
2021
- 2021-09-07 KR KR1020210118833A patent/KR102376003B1/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159004A (en) * | 1988-11-18 | 1992-10-27 | Sumitomo Chemical Company, Limited | Thermoplastic resin composition |
| JP2014034580A (en) * | 2012-08-07 | 2014-02-24 | Ajinomoto Co Inc | Resin composition |
| JP2015004009A (en) * | 2013-06-21 | 2015-01-08 | 味の素株式会社 | Resin compositions |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107236251A (en) | 2017-10-10 |
| TW201805324A (en) | 2018-02-16 |
| KR102376003B1 (en) | 2022-03-21 |
| JP6776577B2 (en) | 2020-10-28 |
| JP2017179014A (en) | 2017-10-05 |
| CN107236251B (en) | 2021-03-02 |
| KR20210114901A (en) | 2021-09-24 |
| KR102325456B1 (en) | 2021-11-15 |
| KR20170113230A (en) | 2017-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI855998B (en) | Resin composition | |
| TWI745363B (en) | Resin composition | |
| TWI731158B (en) | Resin composition | |
| JP6672630B2 (en) | Resin composition | |
| CN107418144B (en) | resin composition | |
| KR102535432B1 (en) | Resin composition | |
| TWI863905B (en) | Resin composition | |
| JP6558055B2 (en) | Resin composition | |
| TWI737649B (en) | Resin composition | |
| JP7480808B2 (en) | Resin composition, resin sheet, printed wiring board and semiconductor device | |
| JP6950732B2 (en) | Resin composition | |
| JP2016027097A (en) | Resin composition | |
| KR20170100434A (en) | Resin sheet with support | |
| JP7310852B2 (en) | resin composition | |
| KR20180103754A (en) | Resin composition layer | |
| JP2017059779A (en) | Method for manufacturing printed wiring board | |
| TWI720997B (en) | Resin composition | |
| TWI793906B (en) | circuit board | |
| JP7180657B2 (en) | resin composition | |
| JP6881552B2 (en) | Resin composition | |
| JP2021091912A (en) | Resin composition |