TWI745135B - Chip repair method - Google Patents
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- TWI745135B TWI745135B TW109137211A TW109137211A TWI745135B TW I745135 B TWI745135 B TW I745135B TW 109137211 A TW109137211 A TW 109137211A TW 109137211 A TW109137211 A TW 109137211A TW I745135 B TWI745135 B TW I745135B
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- 238000000034 method Methods 0.000 title claims abstract description 75
- 230000008439 repair process Effects 0.000 title claims abstract description 50
- 230000002950 deficient Effects 0.000 claims abstract description 150
- 239000003550 marker Substances 0.000 claims abstract description 33
- 239000013067 intermediate product Substances 0.000 claims abstract description 30
- 238000005476 soldering Methods 0.000 claims abstract description 25
- 238000003466 welding Methods 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 53
- 229920001187 thermosetting polymer Polymers 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 239000003292 glue Substances 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000000696 magnetic material Substances 0.000 claims description 14
- 239000000084 colloidal system Substances 0.000 claims description 11
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 230000002745 absorbent Effects 0.000 claims 1
- 239000002250 absorbent Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 230000005389 magnetism Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
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Abstract
一種晶片修補方法,其係通過受控於控制系統之晶片修補裝置執行製程中間產物之瑕疵晶片自載體解焊移除與焊接替換的良品晶片之修補作業,該晶片修補方法係輸入待修補之製程中間產物後,於瑕疵晶片上設置可磁吸性物件並予以固化形成可磁吸性標記體,接續由晶片修補裝置以磁性工作件磁吸固著於瑕疵晶片表面的可磁吸性標記體,並對瑕疵晶片加熱解焊後移除,再去除磁性工作件連接的瑕疵晶片,再於載體解焊移除瑕疵晶片之位置焊接良品晶片。A method for repairing a chip, which uses a chip repairing device controlled by a control system to perform the repairing operation of the defective chip of the intermediate product of the process by de-soldering and removing the defective chip from the carrier and welding and replacing the good chip. The chip repairing method inputs the process to be repaired After the intermediate product, a magnetically attractable object is placed on the defective wafer and cured to form a magnetically attractable marker, followed by the magnetically attractable marker fixed on the surface of the defective wafer by the wafer repair device with a magnetic work piece, The defective chip is heated and unsoldered and then removed, then the defective chip connected to the magnetic work piece is removed, and then the good chip is soldered on the carrier where the defective chip is removed by de-soldering.
Description
本發明係關於一種應用於半導體元件構裝製程中,對檢測後之製程中間產物中黏著於載體上的瑕疵晶片執行解焊移除及焊接替換的良品晶片等修補作業之晶片修補方法。The present invention relates to a chip repair method used in the semiconductor device assembly process to perform repair operations such as de-soldering removal and solder replacement of defective chips adhered to a carrier in the intermediate product of the process after inspection.
目前如微型發光二極體(LED)元件等半導體元件為能連接外部電子裝置之電路,微型LED元件等半導體元件之晶片必須先行焊接於導線架等載體上,藉以經由導線架等載體作外部連接的媒介。為了確保半導體元件之品質,於其構裝製程中通常會特定的程序後執行檢測,從中篩除不良品。At present, semiconductor components such as micro light emitting diode (LED) components are circuits that can be connected to external electronic devices. The chips of semiconductor components such as micro LED components must be soldered to a lead frame or other carrier first, so as to make external connections through the lead frame or other carrier Medium. In order to ensure the quality of semiconductor devices, inspections are usually performed after specific procedures during the assembly process to screen out defective products.
前述微型LED元件等半導體元件構裝製程中,於晶片焊接於導線架料板等載體後,於進行後續製程程序之前,即會對載體上之瑕疵晶片進行去除及焊接替換的良品晶片等晶片修補作業。In the aforementioned micro LED device and other semiconductor device assembly process, after the chip is soldered to a carrier such as a lead frame material, before the subsequent process, the defective chip on the carrier is removed and the defective chip on the carrier is repaired by soldering replacement. Operation.
目前有關晶片修補作業,其主要係由作業人員手動或操作機器來執行,但是已知晶片修補方法因須人工手動依序對瑕疵晶片進行標記、瑕疵晶片解焊再去除,之後將替換的良品晶片焊接在載體已去除瑕疵晶片之位置等等,由於前述的每一步驟皆須逐一個別進行,在作業上較為費時費工。At present, the chip repair work is mainly performed by the operator manually or by operating the machine. However, the known chip repair method requires manual manual marking of defective wafers, desoldering and removing the defective wafers, and then replacing the good quality wafers. Welding on the carrier where the defective chip has been removed, etc., since each of the foregoing steps must be performed one by one, the operation is time-consuming and labor-intensive.
本發明之目的在於提供一種晶片修補方法,解決現有半導體元件製程中之製程中間產物於檢測後,對載體上的瑕疵晶片執行解焊移除及重新焊接良品晶片之人工晶片修補作業費時費工之問題。The purpose of the present invention is to provide a chip repairing method, which solves the time-consuming and labor-consuming manual chip repairing operations of performing unsoldering removal on defective chips on the carrier and re-soldering the defective chips on the carrier after the process intermediate products in the existing semiconductor device manufacturing process are inspected. problem.
為了達成前述目的,本發明提出之晶片修補方法,其係通過受控於控制系統之晶片修補裝置執行製程中間產物之瑕疵晶片自載體解焊移除與焊接替換的良品晶片之修補作業,該晶片修補方法包括: 輸入待修補之製程中間產物之步驟,其係將具有瑕疵晶片之製程中間產物輸送至該晶片修補裝置中,該製程中間產物之載體上之每一瑕疵晶片之位置資料並輸入至該控制系統; 於瑕疵晶片設置可磁吸性物件之步驟,其係由控制系統依據該製程中間產物之每一所述瑕疵晶片之位置,控制該晶片修補裝置於每一所述瑕疵晶片的表面分別設置一可磁吸性物件; 可磁吸性物件固化形成可磁吸性標記體之步驟,其係由該控制系統令該晶片修補裝置使設於所述瑕疵晶片表面之可磁吸性物件固化而形成固著於所述瑕疵晶片的表面之可磁吸性標記體; 解焊移除瑕疵晶片之步驟,其係由該控制系統依據該製程中間產物之每一所述瑕疵晶片之位置,驅動該晶片修補裝置中的一磁性工作件磁吸固著於所述瑕疵晶片表面的可磁吸性標記體,並對所述瑕疵晶片與該載體之間進行加熱解焊,以及自該載體上移除解焊的瑕疵晶片; 去除磁性工作件連接的瑕疵晶片之步驟,其係由該控制系統令該晶片修補裝置移除該磁性工作件末端磁吸連接之解焊後瑕疵晶片;以及 焊接良品晶片之步驟,其係由該控制系統令該晶片修補裝置將一良品晶片焊接在該載體上已移除瑕疵晶片之位置。 In order to achieve the foregoing objective, the present invention proposes a chip repairing method, which uses a chip repairing device controlled by a control system to perform the repairing operation of the defective chip of the intermediate product of the process from the carrier and the repairing operation of the good chip that is replaced by soldering. Repair methods include: The step of inputting process intermediate products to be repaired is to transport the process intermediate products with defective wafers to the wafer repairing device, and input the position data of each defective wafer on the carrier of the process intermediate products to the control system; In the step of arranging a magnetically attractable object on a defective chip, the control system controls the chip repair device to install a magnetically attractable object on the surface of each defective chip according to the position of each defective chip in the intermediate product of the process. Magnetically attractive objects; The step of curing a magnetically attractable object to form a magnetically attractable marker, which is performed by the control system to cause the chip repair device to solidify the magnetically attractable object provided on the surface of the defective chip to form a fixation on the defect Magnetically attractable markers on the surface of the chip; The step of de-soldering and removing defective chips is that the control system drives a magnetic work piece in the chip repairing device to magnetically fix the defective chips according to the position of each defective chip in the intermediate product of the process A magnetically attractable marker on the surface, heating and de-soldering the defective chip and the carrier, and removing the de-soldered defective chip from the carrier; The step of removing the defective chip connected to the magnetic work piece, in which the control system causes the chip repairing device to remove the defective chip connected to the end of the magnetic work piece by magnetic attraction; and In the step of soldering a good chip, the control system causes the chip repair device to solder a good chip on the carrier where the defective chip has been removed.
藉由前述晶片修補方法,當其應用於半導體元件製程中,其至少具備以下功效: 1、 本發明晶片修補方法係利用瑕疵晶片表面設置可磁吸性標記體,搭配使用磁性工作件磁吸具有可磁吸性標記體的瑕疵晶片,同時對瑕疵晶片執行加熱解焊及自載體移除瑕疵晶片等一連貫之動作,增加作業簡便性,並能避免載體上焊接之其餘晶片受到影響,確保載體上之晶片焊接品質。 2、 本發明晶片修補方法中,其磁性工作件係磁吸解焊後之瑕疵晶片移離載體,藉由磁性工作件相對於解焊後之瑕疵晶片之間的磁吸連結關係,讓解焊後之瑕疵晶片易自磁性工作件末端去除,以利後續磁性工作件執行下一個瑕疵晶片之解焊去除動作。 With the aforementioned chip repair method, when it is applied to the semiconductor device manufacturing process, it has at least the following effects: 1. The chip repair method of the present invention uses a magnetically attractable marker on the surface of a defective wafer, and uses a magnetic work piece to magnetically attract a defective wafer with a magnetically attractable marker, and at the same time performs heating, de-soldering and self-carrier removal on the defective wafer Consistent actions, such as removing defective chips, increase the ease of operation, and can prevent the remaining chips soldered on the carrier from being affected, ensuring the quality of the chip soldering on the carrier. 2. In the chip repairing method of the present invention, the magnetic work piece is moved away from the carrier after the defective chip is magnetically absorbed and de-soldered, and the magnetic work piece is connected to the defective chip after the de-soldering by the magnetic attraction connection relationship. The subsequent defective chip can be easily removed from the end of the magnetic work piece, so that the subsequent magnetic work piece can perform the unsoldering and removal action of the next defective chip.
本發明晶片修補方法中,還可進一步利用晶片修補裝置先將含有膏狀或液狀之磁性或導磁性基材設置在所述瑕疵晶片的表面,之後,將熱固性或光固化性膠液設置於所述瑕疵晶片的表面,並使所述熱固性或光固化性膠液包覆所述磁性或導磁性基材而構成所述可磁吸性物件,藉此於可磁吸性物件加熱或照射紫外線而固化形成可磁吸性標記體之步驟後,所述可磁吸性標記體形成具有磁性或導磁性基材在內,無磁性或導磁性之熱固性或光固化性膠體在外之複層構造,於後續之解焊移除瑕疵晶片之步驟中,磁性工作件磁吸位於瑕疵晶片表面之可磁吸性標記體時,磁性工作件係接近或接觸無磁性或導磁性之熱固性或光固化性膠體,與可磁吸性標記體位於內層之磁性或導磁性基材間接磁吸,故能有助於後續解焊移除瑕疵晶片之步驟中,令設有可磁吸性標記體之瑕疵晶片更易於自磁性工作件末端脫離,增進作業之便利性。In the chip repairing method of the present invention, the chip repairing device can be further used to first place a paste or liquid magnetic or magnetic substrate on the surface of the defective wafer, and then place a thermosetting or light-curing glue on the surface of the defective wafer. The surface of the defective wafer, and the thermosetting or photocurable glue solution covers the magnetic or magnetic substrate to form the magnetically attractable object, thereby heating or irradiating the magnetically attractable object with ultraviolet rays After the step of curing to form a magnetically attractable label, the magnetically attractable label is formed into a multilayer structure with a magnetic or magnetic base material and a non-magnetic or magnetic thermosetting or photocurable colloid on the outside, In the subsequent step of unsoldering and removing the defective chip, when the magnetic work piece magnetically attracts the magnetically attractable marker on the surface of the defective chip, the magnetic work piece is close to or in contact with a non-magnetic or magnetically conductive thermosetting or photocurable colloid , It is indirectly magnetically attracted to the magnetic or magnetic substrate in the inner layer of the magnetically attractable marker, so it can help the subsequent step of unsoldering and removing the defective chip, so that the defective chip with the magnetically attractable marker It is easier to detach from the end of the magnetic work piece, which improves the convenience of operation.
承上所述,本發明晶片修補方法中,所述去除磁性工作件連接的瑕疵晶片之步驟,可以選用超音波震動手段震落該磁性工作件磁吸設有可磁吸性標記體的瑕疵晶片,其中超音波震動手段能直接以磁性工作件作為超音波傳遞的介質,有助於連接在磁性工作件上的焊瑕疵晶片去除動作,增進作業之便利性。Continuing from the above, in the chip repair method of the present invention, in the step of removing the defective chip connected to the magnetic work piece, ultrasonic vibration means can be used to shake off the defective chip with a magnetically attractable marker. Among them, the ultrasonic vibration method can directly use the magnetic work piece as the ultrasonic transmission medium, which helps to remove the welding defect chip connected to the magnetic work piece, and enhances the convenience of the operation.
如圖1至圖4所示之本發明晶片修補方法數種較佳實施例之流程示意圖。本發明晶片修補方法係通過受控於控制系統之晶片修補裝置對製程中間產物10之載體11焊接之瑕疵晶片12執行解焊與重新焊接替換之良品晶片13之修補作業,所述載體11可為導線架料板或其他電路載體。如圖1至圖4所示,該晶片修補方法之具體實施步驟係包括:輸入待修補晶片之製程中間產物之步驟、於瑕疵晶片12設置可磁吸性物件20A、20B、20C、20D之步驟、對可磁吸性物件20A、20B、20C、20D固化形成可磁吸性標記體2A、2B、2C、2D之步驟、解焊移除瑕疵晶片12之步驟、去除磁性工作件30連接的瑕疵晶片12之步驟以及焊接良品晶片13之步驟。Figures 1 to 4 show schematic flow diagrams of several preferred embodiments of the chip repair method of the present invention. The chip repairing method of the present invention uses a chip repairing device controlled by a control system to perform de-soldering and re-soldering repairs on
所述輸入待修補晶片之製程中間產物之步驟,其係將具有瑕疵晶片12之製程中間產物10輸送至該晶片修補裝置中,該製程中間產物10中之每一瑕疵晶片12位於載體11之位置資料並輸入至控制系統。The step of inputting the process intermediate product of the wafer to be repaired is to transport the process
所述於瑕疵晶片12設置可磁吸性物件20A、20B、20C、20D之步驟,其係由控制系統依據該製程中間產物之每一瑕疵晶片12之位置,控制晶片修補裝置於所述瑕疵晶片的表面設置可磁吸性物件20A、20B、20C、20D,所述可磁吸性物件20A、20B、20C、20D係指具有磁性之熱固性磁性物件,或能被磁吸之熱固性導磁性物件,或者,所述可磁吸性物件20也可以是具有磁性之光固化性磁性物件(如圖1及圖2所示),或能被磁吸之光固化性導磁性性物件(如圖3及圖4所示),晶片修補裝置於所述瑕疵晶片的表面設置可磁吸性物件20A、20B、20C、20D之方式可以點膠、滴附或噴印方式來進行,前述點膠、滴附或噴印方式屬現有技術,於此不再贅述。In the step of arranging magnetically
所述對可磁吸性物件20A、20B、20C、20D固化形成可磁吸性標記體2A、2B、2C、2D之步驟,其係由控制系統令晶片修補裝置對設於所述瑕疵晶片12表面之可磁吸性物件20A、20B、20C、20D經由加熱或照光(如:紫外線)或其他手段固化並固著於所述瑕疵晶片12的表面,形成固態的可磁吸性標記體2A、2B、2C、2D,其中,所述可磁吸性標記體2A、2B、2C、2D係由可磁吸性物件20A、20B、20C、20D固化形成,並具備原有的磁性或能被磁吸之導磁性。The step of curing the pair of magnetically
所述解焊移除瑕疵晶片12之步驟,其係由控制系統依據該製程中間產物10之每一所述瑕疵晶片12之位置,驅動晶片修補裝置中的磁性工作件30磁吸固著於所述瑕疵晶片12表面的可磁吸性標記體2A、2B、2C、2D,同時對所述瑕疵晶片12與該載體11之間進行加熱解焊,以及自該載體11上移除解焊的瑕疵晶片12,所述的加熱解焊可由預熱至預定溫度之磁性工作件通過磁吸性標記體2A、2B、2C、2D對所述瑕疵晶片12進行加熱解焊,或者,由控制系統控制外部加熱機構對預定位置之標記為瑕疵晶片12進行加熱解焊,較佳的,該磁性工作件30以無接觸方式磁吸固著於所述瑕疵晶片12表面的可磁吸性標記體2A、2B、2C、2D,藉由磁吸力使瑕疵晶片12自該載體11上脫離。The step of de-soldering and removing the
所述去除磁性工作件30連接的瑕疵晶片12之步驟,其係由控制系統令晶片修補裝置將該磁性工作件30末端磁吸連接之解焊瑕疵晶片12移除,較佳的,係令移除之解焊瑕疵晶片12集中在晶片修補裝置預定之收集位置。In the step of removing the
所述焊接良品晶片13之步驟,其由控制系統令晶片修補裝置將良品晶片13焊接在載體11上已移除瑕疵晶片之位置。In the step of soldering the
前述晶片修補方法中,所述於瑕疵晶片12設置可磁吸性物件20A、20B、20C、20D之步驟及對可磁吸性物件20A、20B、20C、20D固化形成可磁吸性標記體2A、2B、2C、2D之步驟,至少可以下列數種方式來執行。In the aforementioned chip repair method, the step of arranging the magnetically
其一,如圖1所示,所述於瑕疵晶片12設置可磁吸性物件20A之步驟係以單一階段設置熱固性之可磁吸性物件20A方式來執行,其係由控制系統依據該製程中間產物10之每一所述瑕疵晶片12之位置,控制晶片修補裝置將預先混合有磁性材料或導磁性材料之液態或膏狀熱固性膠體設於所述瑕疵晶片12的表面,以混合有磁性材料或導磁性材料之熱固性膠體作為可磁吸性物件20A。於對可磁吸性物件20A固化形成可磁吸性標記體2A之步驟則係由控制系統令晶片修補裝置對設於所述瑕疵晶片12表面之可磁吸性物件20A經由加熱手段固化並固著於所述瑕疵晶片12的表面,形成固態的可磁吸性標記體2A。前述磁性材料、導磁性材料及熱固性膠體可以選用現有材料,於此不再贅述。First, as shown in FIG. 1, the step of disposing a magnetically
其二、如圖2所示,係以兩階段設置熱固性之可磁吸性物件20B方式來執行,其係由控制系統依據該製程中間產物10之每一所述瑕疵晶片12之位置,控制晶片修補裝置先將含有膏狀或液狀之磁性或導磁性基材21設置在所述瑕疵晶片12的表面,之後,將熱固性膠液22B滴附在所述瑕疵晶片12的表面,並使所述熱固性膠液22B包覆所述磁性或導磁性基材21而構成所述可磁吸性物件20B。前述中,係控制磁性或導磁性基材21與熱固性膠液22B二者之黏稠度,使熱固性膠液22B能夠包覆磁性或導磁性基材21並黏著在所述瑕疵晶片12的表面。於對可磁吸性物件20B固化形成可磁吸性標記體2B之步驟則係由控制系統令晶片修補裝置對設於所述瑕疵晶片12表面之可磁吸性物件20經由加熱手段固化並固著於所述瑕疵晶片12的表面,形成固態的可磁吸性標記體2B。前述磁性或導磁性基材21B及熱固性膠液22B等可以選用現有材料,磁性或導磁性基材21B與熱固性膠液22B之黏稠度可以依其選用的材料而適當的調整,於此不再贅述。Second, as shown in FIG. 2, it is implemented in a two-stage setting of a thermosetting magnetically
前述中,對可磁吸性物件20A、20B固化形成可磁吸性標記體2A、2B之步驟中,當可磁吸性物件20A、20B選用熱固性膠體時,其加熱溫度係依可磁吸性物件選用之材料而設定,基本上,所述加熱溫度須能足以使可磁吸性物件20A、20B固化定形,但小於晶片焊接於載體11上之焊錫14熔點溫度,使製程中間產物10中之晶片於加熱過程中,維持晶片焊接固著於載體11上之狀態。於本較佳實施例係施以150℃~280℃之加熱溫度,使設於所述瑕疵晶片12表面之可磁吸性物件20A、20B因加熱固化而形成固態的可磁吸性標記體2A、2B。In the foregoing, in the step of curing the magnetically
其三,如圖3所示,係以單一階段設置光固化性之可磁吸性物件20C方式來執行,其係由控制系統依據該製程中間產物10之每一所述瑕疵晶片12之位置,控制晶片修補裝置將預先混合有磁性材料或導磁性材料之液態或膏狀光固化膠體設於所述瑕疵晶片12的表面,以混合有磁性材料或導磁性材料之光固化性膠體作為可磁吸性物件20C。於對可磁吸性物件20C固化形成可磁吸性標記體2C之步驟則係由控制系統令晶片修補裝置對設於所述瑕疵晶片12表面之可磁吸性物件20C經由照射紫外線手段固化並固著於所述瑕疵晶片12的表面,形成固態的可磁吸性標記體2C。前述磁性材料、導磁性材料及光固化性膠體可以選用現有材料,於此不再贅述。The third, as shown in FIG. 3, is performed in a single-stage setting of a photocurable magnetically
其四、如圖4所示,係以兩階段設置光固化之可磁吸性物件20D方式來執行,其係由控制系統依據該製程中間產物10之每一所述瑕疵晶片12之位置,控制晶片修補裝置先將含有膏狀或液狀之磁性或導磁性基材21設置在所述瑕疵晶片12的表面,之後,將光固化性膠液22D滴附在所述瑕疵晶片12的表面,並使所述光固化性膠液22D包覆所述磁性或導磁性基材21而構成所述可磁吸性物件20D。前述中,係控制磁性或導磁性基材21與光固化性膠液22D二者之黏稠度,使光固化性膠液22D能夠包覆磁性或導磁性基材21並黏著在所述瑕疵晶片12的表面。於對可磁吸性物件20D固化形成可磁吸性標記體2D之步驟則係由控制系統令晶片修補裝置對設於所述瑕疵晶片12表面之可磁吸性物件20D經由照射紫外線手段固化並固著於所述瑕疵晶片12的表面,形成固態的可磁吸性標記體2D。前述磁性或導磁性基材21及光固化性膠液22D等可以選用現有材料,磁性或導磁性基材21與光固化性膠液22D之黏稠度可以依其選用的材料而適當的調整,於此不再贅述。Fourth, as shown in FIG. 4, it is performed in a two-stage setting of a light-cured magnetically
前述晶片修補方法中,所述去除磁性工作件30連接的瑕疵晶片12之步驟,係由晶片修補裝置以超音波震動手段震落磁性工作件30磁吸設有可磁吸性標記體20A的瑕疵晶片12,或以其他機械力手段去除磁性工作件磁吸具設有可磁吸性標記體的磁疵晶片。當該磁性工作件30以無接觸方式磁吸固著於所述瑕疵晶片12表面的可磁吸性標記體2A、2B、2C、2D時,有助於所述去除磁性工作件30連接的瑕疵晶片12之步驟進行。In the aforementioned chip repair method, the step of removing the
前述晶片修補方法中,所述解焊移除瑕疵晶片12之步驟,其係由受控之晶片修補裝置將磁性工作件30加熱至280℃~400℃,並通過所述瑕疵晶片12導熱至其底面的焊錫14而解焊。In the aforementioned chip repair method, the step of removing the
前述晶片修補方法中,所述焊接良品晶片13之步驟,其係通過受控之晶片修補裝置以取置件吸取良品晶片13,並將良品晶片13移置該載體11上已移除解焊瑕疵晶片之位置,接續對良品晶片13施以適當的壓力及加熱至280℃~350℃後,再降溫至250℃以下,使良品晶片13焊接在載體11上。In the aforementioned chip repair method, the step of soldering the
由前述晶片修補方法較佳實施例之說明可知,當該晶片修補方法應用半導體元件製程中,對檢測後製程中間產物之載體之瑕疵晶片執行解焊與重新焊接替換之良品晶片之修補作業時,本發明晶片修補方法係利用瑕疵晶片表面設置可磁吸性標記體,搭配使用磁性工作件磁吸具有可磁吸性標記體的瑕疵晶片,同時能夠經由磁性工作件直接對特定的瑕疵晶片執行加熱解焊及自載體移除瑕疵晶片等一連貫之動作,增加作業簡便性;另一方面,藉由磁性工作件係磁吸解焊後之瑕疵晶片移離載體,其能利用磁性工作件相對於解焊後之瑕疵晶片之間易脫離磁吸連結關係,以利後續磁性工作件去除其連接的瑕疵晶片,再執行下一個瑕疵晶片之解焊去除動作。因此,本發明能於半導體元件製程中提供一項極具產業利用價值之晶片修補方法。It can be seen from the description of the preferred embodiment of the aforementioned chip repair method that when the chip repair method is applied to the semiconductor device manufacturing process, the repair operation of the defective wafer of the carrier of the intermediate product of the inspection after the process is performed, The chip repairing method of the present invention uses a magnetically attractable marker on the surface of a defective wafer, and uses a magnetic work piece to magnetically attract a defective wafer with a magnetically attractable marker, and at the same time, it can directly heat a specific defective wafer through the magnetic work piece. Desoldering and removing defective chips from the carrier increase the ease of operation; on the other hand, by removing the defective chips from the carrier after the magnetic work piece is magnetically absorbed, it can use the magnetic work piece relative to the carrier. After unsoldering, the defective chips are easily separated from the magnetic connection relationship, so that the subsequent magnetic work pieces can remove the connected defective chips, and then perform the unsoldering removal operation of the next defective chip. Therefore, the present invention can provide a very valuable chip repair method in the semiconductor device manufacturing process.
10:製程中間產物
11:載體
12:瑕疵晶片
13:良品晶片
14:焊錫
20A:可磁吸性物件
20B:可磁吸性物件
20C:可磁吸性物件
20D:可磁吸性物件
21:磁性或導磁性基材
22B:熱固性膠液
22D:光固化性膠液
2A:可磁吸性標記體
2B:可磁吸性標記體
2C:可磁吸性標記體
2D:可磁吸性標記體
30:磁性工作件
10: Process intermediate products
11: Carrier
12: Defective chip
13: good chip
14:
圖1係本發明晶片修補方法之第一較佳實施例之流程示意圖。 圖2係本發明晶片修補方法之第二較佳實施例之流程示意圖。 圖3係本發明晶片修補方法之第三較佳實施例之流程示意圖。 圖4係本發明晶片修補方法之第四較佳實施例之流程示意圖。 FIG. 1 is a schematic flowchart of the first preferred embodiment of the chip repair method of the present invention. FIG. 2 is a schematic flowchart of a second preferred embodiment of the chip repair method of the present invention. FIG. 3 is a schematic flowchart of a third preferred embodiment of the chip repair method of the present invention. 4 is a schematic flowchart of a fourth preferred embodiment of the chip repair method of the present invention.
10:製程中間產物 10: Process intermediate products
11:載體 11: Carrier
12:瑕疵晶片 12: Defective chip
13:良品晶片 13: good chip
14:焊錫 14: Solder
20B:可磁吸性物件 20B: Magnetically attractable objects
21:磁性或導磁性基材 21: Magnetic or permeable substrate
22B:熱固性膠液 22B: Thermosetting glue
2B:可磁吸性標記體 2B: Magnetically attractable label
30:磁性工作件 30: Magnetic work piece
Claims (8)
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| TW109137211A TWI745135B (en) | 2020-10-27 | 2020-10-27 | Chip repair method |
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| TW109137211A TWI745135B (en) | 2020-10-27 | 2020-10-27 | Chip repair method |
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| Publication Number | Publication Date |
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| TWI745135B true TWI745135B (en) | 2021-11-01 |
| TW202218212A TW202218212A (en) | 2022-05-01 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002062825A (en) * | 2000-08-18 | 2002-02-28 | Sony Corp | Image display device and method of manufacturing the same |
| JP2006140398A (en) * | 2004-11-15 | 2006-06-01 | Sony Corp | Element transfer method |
| TW201911447A (en) * | 2017-08-02 | 2019-03-16 | 李美燕 | Integrated microgripper, method of manufacturing the same and microgripper array and transfer system using the same |
| WO2019218775A1 (en) * | 2018-05-12 | 2019-11-21 | 汕头超声显示器技术有限公司 | Manufacturing method for led array apparatus |
| CN111785752A (en) * | 2020-07-07 | 2020-10-16 | 深圳市微组半导体科技有限公司 | Motherboard Repair Method |
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2020
- 2020-10-27 TW TW109137211A patent/TWI745135B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002062825A (en) * | 2000-08-18 | 2002-02-28 | Sony Corp | Image display device and method of manufacturing the same |
| JP2006140398A (en) * | 2004-11-15 | 2006-06-01 | Sony Corp | Element transfer method |
| TW201911447A (en) * | 2017-08-02 | 2019-03-16 | 李美燕 | Integrated microgripper, method of manufacturing the same and microgripper array and transfer system using the same |
| WO2019218775A1 (en) * | 2018-05-12 | 2019-11-21 | 汕头超声显示器技术有限公司 | Manufacturing method for led array apparatus |
| CN111785752A (en) * | 2020-07-07 | 2020-10-16 | 深圳市微组半导体科技有限公司 | Motherboard Repair Method |
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