TWI743696B - Substrate processing apparatus, and substrate processing method - Google Patents

Abstract

A substrate processing apparatus (100) includes a substrate holding section (120), a rinsing liquid supply section (130), an organic solvent supply section (140), and a controller (102). The controller (102) controls the rinsing liquid supply section (130) and the organic solvent supply section (140) such that an upper surface (Wa) of a substrate (W) is covered with a rinsing liquid ejected from a rinsing liquid nozzle (132), ejection of an organic solvent from an organic solvent nozzle (142) is started in a state of a position where the rinsing liquid from the rinsing liquid nozzle (132) is to reach being moved, and then rinsing liquid supply is stopped in a state in which the upper surface (Wa) is covered with the organic solvent.

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing device, a substrate processing method, and a semiconductor manufacturing method.

For example, the substrate processing apparatus is suitable for use in the manufacture of semiconductor substrates. The occurrence of watermarks during the manufacture of semiconductor substrates can become a problem. Since water stains are unevenly generated on the substrate, it will adversely affect the characteristics of the substrate. Therefore, for the purpose of suppressing the occurrence of water stains, it has been examined to spray low-humidity gas as an organic solvent for drying when IPA (isopropyl alcohol) is supplied (see, for example, Patent Document 1). In the substrate processing apparatus of Patent Document 1, after supplying a rinse liquid as a processing liquid, the supply of IPA is started in a state where a low-humidity gas has been supplied, thereby suppressing the occurrence of water stains.

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2009-218563.

In the substrate processing apparatus of Patent Document 1, after the cleaning liquid is supplied as the processing liquid, the cleaning liquid nozzle is retracted to the retracted position, and the IPA ejection nozzle is moved directly above the substrate. However, in the case of switching between the spraying of the cleaning liquid and the spraying of the organic solvent, when the flow rate of the low-humidity gas is low, the upper surface of the substrate may be exposed and water stains may occur on the substrate. In addition, when low-humidity gas is continuously supplied for a long time, the cost of substrate processing may increase.

The present invention was developed in view of the above-mentioned problems, and its purpose is to provide a substrate processing apparatus, a substrate processing method, and a semiconductor manufacturing method that can suppress the occurrence of water stains when a cleaning liquid and an organic solvent are sprayed.

According to one aspect of the present invention, a substrate processing apparatus includes a substrate holding part, a cleaning liquid supply part, an organic solvent supply part, and a control part. The aforementioned substrate holding portion rotatably holds the substrate. The cleaning liquid supply unit has a cleaning liquid nozzle for spraying the cleaning liquid onto the upper surface of the substrate. The organic solvent supply unit has an organic solvent nozzle for spraying an organic solvent onto the upper surface of the substrate. The control unit controls the cleaning liquid supply unit and the organic solvent supply unit. The control unit controls the cleaning liquid supply unit and the organic solvent supply unit in the following manner: after covering the upper surface of the substrate with the cleaning liquid sprayed from the cleaning liquid nozzle, the cleaning liquid from the cleaning liquid nozzle And start to spray the organic solvent from the organic solvent nozzle, then stop the supply of the cleaning liquid and cover the upper surface of the substrate with the organic solvent sprayed from the organic solvent nozzle.

In one embodiment, the control unit controls the cleaning liquid supply unit to reduce the flow rate of the cleaning liquid sprayed from the cleaning liquid nozzle when the arrival position of the cleaning liquid from the cleaning liquid nozzle moves.

In one embodiment, the control unit controls the cleaning liquid supply unit so that the cleaning liquid covers the center of the upper surface of the substrate when the arrival position of the cleaning liquid from the cleaning liquid nozzle moves.

In one embodiment, the cleaning liquid nozzle system sprays the cleaning liquid obliquely to the upper surface of the substrate.

In one embodiment, the cleaning liquid nozzle system sprays the cleaning liquid perpendicularly to the upper surface of the substrate.

In one embodiment, the cleaning liquid nozzle discharges the cleaning liquid without moving during the period from when the cleaning liquid is started to be sprayed to when the spraying of the cleaning liquid is stopped.

In one embodiment, the cleaning liquid nozzle moves from the start of spraying the cleaning liquid to the stop of the spraying of the cleaning liquid.

In one embodiment, the organic solvent nozzle ejects the organic solvent without moving during the period from the start of the ejection of the organic solvent to the stop of the ejection of the organic solvent.

In one embodiment, the control section controls the substrate holding section to continuously rotate the substrate after stopping the ejection of the organic solvent from the organic solvent nozzle.

In one embodiment, the substrate processing apparatus further includes a shielding member having a shielding plate facing the upper surface of the substrate.

In one embodiment, the shielding member includes the organic solvent nozzle.

In one embodiment, the shielding member has a gas nozzle for supplying gas to the upper surface of the substrate.

According to another aspect of the present invention, a substrate processing method includes: a step of rotating the substrate while holding the substrate; a step of spraying a cleaning liquid onto the upper surface of the substrate from a cleaning liquid nozzle; and applying an organic solvent nozzle to the substrate The step of spraying organic solvent on the upper surface of the above. In the process for spraying the cleaning liquid and the process for spraying the organic solvent, after covering the upper surface of the substrate with the cleaning liquid sprayed from the cleaning liquid nozzle, the cleaning liquid from the cleaning liquid nozzle And start to spray the organic solvent from the organic solvent nozzle, then stop the supply of the cleaning liquid and cover the upper surface of the substrate with the organic solvent sprayed from the organic solvent nozzle.

In one embodiment, in the step for rotating the substrate, the substrate is subjected to hydrophobization treatment.

In one embodiment, the substrate processing method further includes: applying a chemical liquid treatment to the substrate before spraying the cleaning liquid.

According to another aspect of the present invention, a semiconductor manufacturing method includes: a step of rotating the semiconductor substrate while holding the semiconductor substrate; a step of spraying a cleaning liquid onto the upper surface of the semiconductor substrate from a cleaning liquid nozzle; and a step of spraying a cleaning liquid from an organic solvent nozzle A step of spraying an organic solvent onto the upper surface of the semiconductor substrate. In the process for spraying the cleaning liquid and the process for spraying the organic solvent, after covering the upper surface of the semiconductor substrate with the cleaning liquid sprayed from the cleaning liquid nozzle, the cleaning from the cleaning liquid nozzle The arrival position of the liquid moves to start spraying the organic solvent from the organic solvent nozzle, and then the supply of the cleaning liquid is stopped and the upper surface of the semiconductor substrate is covered with the organic solvent sprayed from the organic solvent nozzle.

According to the present invention, the generation of water stains is suppressed when the cleaning liquid and the organic solvent are sprayed.

100: Substrate processing device

100A: component liquid cabinet

100B: fluid tank

101: control device

102: Control Department

104: Memory Department

110: Chamber

120: Board holding part

121: Rotation Base

122: fixture components

123: axis

124: electric motor

130: Cleaning fluid supply unit

132: Nozzle (washing liquid nozzle)

134,144,154,174: supply pipe

136,146,156,176: Valve

138,148,158: Nozzle moving part

138a, 148a, 158a, 168a: arm

138b, 148b, 158b, 168b: rotation axis

138c, 148c, 158c, 168c: nozzle moving mechanism

140: Organic solvent supply department

142: Nozzle (Organic Solvent Nozzle)

150: Liquid medicine supply department

152: Nozzle (Medicinal Liquid Nozzle)

160: Shading member

162: Shading Board

164: Pivot

166: Nozzle

168: Unit moving part

170: Gas Supply Department

172: Nozzle (gas nozzle)

180: hood

AX: Rotation axis

CR: Central Robot

IR: Index Robot

L: direction of travel

La,Lb: Ingredients

LP: load port

O: Center

R: Rotation direction

TW: Tower

W: substrate

Wa: upper surface

Wb: back

Fig. 1 is a schematic diagram of the substrate processing apparatus of the present embodiment.

[Fig. 2] is a flowchart for explaining the substrate processing method of this embodiment.

(A) to (d) in [FIG. 3] are schematic diagrams for explaining the flow of the substrate processing method of this embodiment.

(A) to (d) in [FIG. 4] are schematic diagrams for explaining the flow of the substrate processing method of this embodiment.

Fig. 5 is a schematic diagram of the substrate processing apparatus of the present embodiment.

[Fig. 6] is a flowchart for explaining the substrate processing method of this embodiment.

[FIG. 7] (a) to (c) are schematic diagrams for explaining the flow of the substrate processing method of this embodiment.

(A) to (c) in [FIG. 8] are schematic diagrams for explaining the flow of the substrate processing method of this embodiment.

(A) to (c) in [FIG. 9] are schematic diagrams for explaining the flow of the substrate processing method of this embodiment.

[FIG. 10] (a) and (b) are schematic diagrams showing the movement of the arrival position of the cleaning liquid in the substrate processing apparatus of this embodiment.

Fig. 11 is a schematic diagram of the substrate processing apparatus of the present embodiment.

(A) to (d) in [FIG. 12] are schematic diagrams for explaining the flow of the substrate processing method of this embodiment.

Fig. 13 is a schematic diagram of the substrate processing apparatus of the present embodiment.

Hereinafter, embodiments of the substrate processing apparatus, substrate processing method, and semiconductor manufacturing method of the present invention will be described with reference to the drawings. In addition, the same reference numerals are attached to the same or equivalent parts in the drawings, and the description is not repeated. In addition, in order to facilitate the understanding of the present invention, the X-direction, Y-direction, and Z-direction that are orthogonal to each other may be described in this specification. Typically, the X direction and the Y direction are parallel to the horizontal direction, and the Z direction is parallel to the vertical direction.

The substrate processing apparatus 100 of this embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic diagram of a substrate processing apparatus 100 of this embodiment.

The substrate processing apparatus 100 processes the substrate W. The substrate processing apparatus 100 processes the substrate W by performing at least one of etching, surface treatment, property imparting, processing film formation, removal of at least a part of the film, and cleaning of the substrate W.

The substrate W includes, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for field emission displays (FED; Field Emission Display), substrates for optical disks, substrates for magnetic disks, substrates for optical magnetic disks, and optical disks. Substrates for photomasks, ceramic substrates, and substrates for solar cells. The substrate W is, for example, a substantially circular plate shape. Here, the substrate processing apparatus 100 processes the substrates W piece by piece.

The substrate processing apparatus 100 includes a chamber 110, a substrate holding unit 120, a cleaning liquid supply unit 130, and an organic solvent supply unit 140. The chamber 110 accommodates the substrate W. The substrate holding portion 120 holds the substrate W. The cleaning liquid supply unit 130 supplies the cleaning liquid to the substrate W. The organic solvent supply unit 140 supplies an organic solvent to the substrate W.

The chamber 110 has a roughly box shape with an internal space. The chamber 110 accommodates the substrate W. Here, the substrate processing apparatus 100 is a blade type for processing the substrates W piece by piece, and the substrate W is accommodated piece by piece in the chamber 110. The substrate W is contained in the chamber 110 and is processed in the chamber 110. At chamber 110 At least a part of each of the substrate holding unit 120, the cleaning liquid supply unit 130, and the organic solvent supply unit 140 is housed.

The substrate holding portion 120 holds the substrate W. The substrate holding portion 120 horizontally holds the substrate W so that the upper surface Wa of the substrate W faces upward and the back surface (lower surface) Wb of the substrate W faces vertically downward. In addition, the substrate holding portion 120 rotates the substrate W while holding the substrate W.

For example, the substrate holding portion 120 may also be a clamping type for clamping the end of the substrate W. Alternatively, the substrate holding portion 120 may have any mechanism for holding the substrate W from the back surface Wb. For example, the substrate holding portion 120 may also be of a vacuum type. In this case, the substrate holding portion 120 makes the center portion of the back surface Wb of the substrate W, which is a non-device formation surface, sucked to the upper surface, thereby holding the substrate W horizontally. Alternatively, the substrate holding portion 120 may also be a combination of a clamping type and a vacuum type, and the clamping type is used to make a plurality of chuck pins contact the peripheral end surface of the substrate W.

For example, the substrate holding portion 120 includes a spin base 121, a chuck member 122, a shaft 123, and an electric motor 124. The clamp member 122 is installed on the rotation base 121. The clamp member 122 clamps the substrate W. Typically, a plurality of clamp members 122 are provided on the rotation base 121.

The shaft 123 is a hollow shaft. The shaft 123 extends in the vertical direction along the rotation axis AX. A rotation base 121 is connected to the upper end of the shaft 123. The back surface of the substrate W is in contact with the rotation base 121, and the substrate W is placed on the rotation base 121.

The rotation base 121 has a disk shape and supports the substrate W horizontally. The shaft 123 extends downward from the central part of the rotation base 121. The electric motor 124 applies rotational force to the shaft 123. The electric motor 124 rotates the shaft 123 in the rotation direction R, thereby rotating the substrate W and the rotation base 121 with the rotation axis AX as the center. Here, the rotation direction R is the counterclockwise direction.

The cleaning liquid supply unit 130 supplies the cleaning liquid to the upper surface Wa of the substrate W. By the cleaning process using the cleaning liquid, the chemical liquid, impurities, etc. adhering to the upper surface Wa of the substrate W can be rinsed. The cleaning liquid supplied from the cleaning liquid supply unit 130 may also include deionized water (DIW), carbonated water, electrolyzed ionized water, ozone water, ammonia, hydrochloric acid water with a dilution concentration (for example, about 10 ppm to 100 ppm), or reduction Any of water (hydrogen water).

The cleaning liquid supply unit 130 includes a cleaning liquid nozzle 132, a supply pipe 134 and a valve 136. The nozzle 132 is opposed to the upper surface Wa of the substrate W, and sprays the cleaning liquid toward the upper surface Wa of the substrate W. The supply pipe 134 is coupled to the nozzle 132. The nozzle 132 is provided at the front end of the supply pipe 134. The supply pipe 134 is supplied with cleaning liquid from a supply source. The valve 136 is provided in the supply pipe 134. The valve 136 opens and closes the flow path in the supply pipe 134. In this specification, the cleaning liquid nozzle 132 is also referred to as the nozzle 132 for short.

The organic solvent supply unit 140 supplies an organic solvent to the upper surface Wa of the substrate W. By the organic solvent treatment using an organic solvent, the cleaning liquid on the upper surface Wa of the substrate W is replaced with an organic solvent. Typically, the volatility of organic solvents is higher than that of cleaning fluids.

The organic solvent supplied from the organic solvent supply unit 140 may also include isopropyl alcohol (IPA). Alternatively, the organic solvent may also include ethanol, acetone, propylene glycol ethyl ether (PGEE; propylene glycol ethyl ether) or propylene glycol monomethyl ether acetate (PGMEA; propylene glycol monomethyl ether acetate).

The organic solvent supply unit 140 includes an organic solvent nozzle 142, a supply pipe 144, and a valve 146. The nozzle 142 is opposed to the upper surface Wa of the substrate W, and ejects the organic solvent toward the upper surface Wa of the substrate W. The supply pipe 144 is coupled to the nozzle 142. The nozzle 142 is provided at the front end of the supply pipe 144. The supply pipe 144 is supplied with an organic solvent from a supply source. The valve 146 is provided in the supply pipe 144. Valve 146 will supply pipe 144 The internal flow path is opened and closed. In this specification, the organic solvent nozzle 142 may be simply referred to as the nozzle 142 in some cases.

The organic solvent supply unit 140 further includes a nozzle moving unit 148. The nozzle moving unit 148 moves the nozzle 142 between the ejection position and the retracted position. In the case where the nozzle 142 is located at the ejection position, the nozzle 142 is located above the substrate W. In the case where the nozzle 142 is located at the ejection position, the nozzle 142 ejects the organic solvent toward the upper surface Wa of the substrate W. In the case where the nozzle 142 is located at the retracted position, the nozzle 142 is located outside the substrate W in the radial direction of the substrate W.

The nozzle moving part 148 includes an arm 148a, a rotating shaft 148b, and a nozzle moving mechanism 148c. The arm 148a extends in a slightly horizontal direction. A nozzle 142 is attached to the tip of the arm 148a. The arm 148a is coupled to the rotating shaft 148b. The rotating shaft 148b extends in a substantially vertical direction. The nozzle moving mechanism 148c rotates the rotation shaft 148b around a rotation axis along a substantially vertical direction, so that the arm 148a rotates along a substantially horizontal plane. As a result, the nozzle 142 moves along a slightly horizontal plane. For example, the nozzle moving mechanism 148c includes an arm swing motor that rotates the rotation shaft 148b around the rotation axis. The arm swing motor is, for example, a servo motor. In addition, the nozzle moving mechanism 148c raises and lowers the rotation shaft 148b in a substantially vertical direction, thereby raising and lowering the arm 148a. As a result, the nozzle 142 moves in a slightly vertical direction. For example, the nozzle moving mechanism 148c includes a ball screw mechanism and an arm lift motor, and the arm lift motor applies driving force to the ball screw mechanism. The arm lifting motor is, for example, a servo motor.

The substrate processing apparatus 100 further includes a cup 180. The cover 180 recovers the liquid scattered from the substrate W. The cover 180 can rise vertically to the side of the substrate W. In addition, the cover 180 may be lowered from the side of the substrate W to vertically below.

The substrate processing apparatus 100 is further provided with a control device 101. The control device 101 controls various operations of the substrate processing device 100.

The control device 101 further includes a control unit 102 and a storage unit 104. The control unit 102 includes a processor. The processor system has, for example, a central processing unit (CPU; Central Processing Unit). Alternatively, the processor may also have a general-purpose computing machine. For example, the control unit 102 controls the substrate holding unit 120, the cleaning liquid supply unit 130, the organic solvent supply unit 140, and/or the cover 180. In one example, the control unit 102 controls the electric motor 124, the valve 136, the valve 146, the nozzle moving mechanism 148c, and/or the cover 180.

The storage unit 104 stores data and computer programs. The memory 104 includes a main memory device and an auxiliary memory device. The main memory device is, for example, a semiconductor memory. The auxiliary memory device is, for example, a semiconductor memory and/or a hard disk drive. The storage unit 104 may also include removable media. The control unit 102 executes the computer program stored in the storage unit 104 to execute substrate processing operations.

In addition, a computer program formulated in a predetermined order is stored in the storage unit 104. The substrate processing apparatus 100 operates in accordance with a sequence established by a computer program.

In the substrate processing apparatus 100 of this embodiment, the upper surface Wa of the substrate W is covered with the cleaning liquid ejected from the nozzle 132. Thereby, the upper surface Wa of the substrate W is subjected to cleaning treatment. In this case, it is preferable that the arrival position of the cleaning liquid from the nozzle 132 is the center of the upper surface Wa of the substrate W. Thereby, even if the flow rate of the cleaning liquid from the nozzle 132 is small, the upper surface Wa of the substrate W can be covered with the cleaning liquid.

In addition, in the substrate processing apparatus 100 of this embodiment, the reaching position of the cleaning liquid from the nozzle 132 on the upper surface Wa of the substrate W is moved, and the ejection of the organic solvent from the nozzle 142 is started. Thereby, the organic solvent can be sprayed to a position far away from the arrival position of the cleaning liquid, so that the splash of the cleaning liquid and the organic solvent can be prevented from causing a malfunction. In addition, in the substrate processing apparatus 100 of this embodiment, the upper surface Wa of the substrate W is covered with the organic solvent sprayed from the nozzle 142. To cover the base The cleaning liquid on the upper surface Wa of the plate W is replaced with an organic solvent. In addition, by replacing the cleaning liquid covering the upper surface Wa of the substrate W with an organic solvent, the upper surface Wa of the substrate W can be dried appropriately.

According to the substrate processing apparatus 100 of this embodiment, the cleaning process and the organic solvent process can be performed with a simple configuration, and the upper surface Wa of the substrate W can be prevented from being exposed during the cleaning process and the organic solvent process. Furthermore, in the substrate processing apparatus 100 of this embodiment, it is possible to suppress splashing caused by spraying the cleaning liquid and the organic solvent to the same position.

In addition, the substrate processing apparatus 100 of this embodiment is suitable for use in the processing of a semiconductor substrate provided with a semiconductor. Typically, a conductive layer and an insulating layer are laminated on the base material of the semiconductor substrate. The substrate processing apparatus 100 is suitable for use in cleaning and/or processing (for example, etching, characteristic change, etc.) of a conductive layer and/or an insulating layer when manufacturing a semiconductor substrate.

In addition, water or an aqueous solution is suitable for use as a cleaning liquid. In this case, there will be the following doubts: when the upper surface Wa of the substrate W is subjected to hydrophobization treatment, the flow rate of the cleaning liquid on the upper surface Wa of the substrate W is faster than that of the organic solvent flowing on the upper surface Wa of the substrate W. The speed is also fast; when the timing of spraying the organic solvent from the nozzle 142 is delayed, at least a part of the upper surface Wa of the substrate W is not covered by any liquid and is exposed. However, according to the substrate processing method of this embodiment, since the cleaning liquid is also ejected from the nozzle 132 when the organic solvent is ejected from the nozzle 142, the upper surface Wa of the substrate W can be suppressed from being exposed. In this way, the substrate processing method of the present embodiment is suitably applied to the processing of the hydrophobic substrate W. However, the substrate processing method of this embodiment can also be applied to the processing of a hydrophilic substrate W.

Hereinafter, the flow of the substrate processing method of this embodiment will be described with reference to FIGS. 1 and 2. FIG. 2 is a flowchart for explaining the substrate processing method of this embodiment.

In step S102, the cleaning liquid supply unit 130 supplies the cleaning liquid to the upper surface Wa of the substrate W. Here, the cleaning liquid is sprayed onto the upper surface Wa of the substrate W from the nozzle 132 of the cleaning liquid supply unit 130. The entire surface of the upper surface Wa of the substrate W is covered with the cleaning liquid, so that the upper surface Wa is cleaned.

In addition, the substrate W is housed in the chamber 110, and the substrate W is held by the substrate holding portion 120. In a state where the substrate W is held by the substrate holding unit 120 and rotated at a predetermined rotation speed, the cleaning liquid supply unit 130 supplies the substrate W with the cleaning liquid. At this time, the cleaning liquid supplied by the cleaning liquid supply unit 130 spreads over the upper surface Wa of the substrate W so as to cover the entire upper surface Wa of the substrate W.

For example, as shown in FIG. 1, the nozzle 132 may also face the upper surface Wa of the substrate W obliquely. In this case, the nozzle 132 can also be fixed to the chamber 110. In addition, the nozzle 132 may spray the cleaning liquid to the substrate W obliquely from above the upper surface Wa of the substrate W. Alternatively, the nozzle 132 may be vertically opposed to the upper surface Wa of the substrate W, and the nozzle 132 may spray the cleaning liquid on the substrate W from above the upper surface Wa of the substrate W in the vertical direction.

For example, the cleaning liquid sprayed from the nozzle 132 flies in the atmosphere in the chamber 110 and reaches the center of the upper surface Wa of the substrate W. For example, the cleaning liquid may reach the center of the substrate W. Alternatively, the cleaning liquid may reach the vicinity of the center of the substrate W.

In step S104, the cleaning liquid from the nozzle 132 of the cleaning liquid supply unit 130 is moved to the position of the substrate W. For example, the arrival position of the cleaning liquid moves from the center of the substrate W to the end of the substrate W.

In one example, in the case where the cleaning liquid is sprayed obliquely from the nozzle 132, the flow rate of the cleaning liquid sprayed from the nozzle 132 is reduced, thereby enabling the cleaning liquid to reach the substrate W and move to the reaching position. Alternatively, by moving the position of the nozzle 132, it is possible to move the cleaning liquid to the reaching position of the substrate W.

It is also possible to change the flow rate (discharge amount) of the washing liquid sprayed from the nozzle 132 according to the movement of the arrival position of the washing liquid. For example, the flow rate of the cleaning liquid from the nozzle 132 may be reduced along with the movement of the arrival position of the cleaning liquid. However, it is preferable that the flow rate of the cleaning liquid is set so that the center of the upper surface Wa of the substrate W is covered by the cleaning liquid even after the arrival position of the cleaning liquid moves.

Alternatively, the position of the nozzle 132 may be moved, thereby moving the reaching position of the cleaning liquid to the upper surface Wa of the substrate W. For example, the position of the nozzle 132 may be moved toward the outer side of the substrate W in the radial direction, thereby moving the cleaning liquid to the reached position of the substrate W. Alternatively, when the nozzle 132 is spraying the cleaning liquid obliquely, the position of the nozzle 132 may be moved downward, thereby moving the cleaning liquid to the arrival position of the substrate W.

In step S106, the organic solvent supply unit 140 supplies the organic solvent to the upper surface Wa of the substrate W in a state where the cleaning liquid from the nozzle 132 of the cleaning liquid supply unit 130 is ejected to the upper surface Wa of the substrate W. At this time, the organic solvent is ejected from the nozzle 142 of the organic solvent supply unit 140 to the upper surface Wa of the substrate W.

In addition, the nozzle 142 may also be vertically opposed to the upper surface Wa of the substrate W, and the nozzle 142 sprays the organic solvent to the substrate W from above the upper surface Wa of the substrate W in the vertical direction. Alternatively, the nozzle 142 may be obliquely directed toward the upper surface Wa of the substrate W, and the nozzle 142 may spray the organic solvent on the upper surface Wa of the substrate W obliquely from above the upper surface Wa of the substrate W.

In addition, after the arrival position of the cleaning liquid from the nozzle 132 starts to move in step S104, the nozzle 142 in step S106 immediately starts to spray the organic solvent. Alternatively, after the arrival position of the cleaning liquid from the nozzle 132 starts to move in step S104 and a predetermined period has elapsed, the nozzle 142 in step S106 starts to spray the organic solvent.

In step S108, the spray of the organic solvent from the nozzle 142 is continued, and on the other hand, the spray of the cleaning liquid from the nozzle 132 is stopped. In addition, even when the organic solvent is continuously sprayed, the flow rate of the organic solvent from the nozzle 142 can be changed. For example, the flow rate of the organic solvent from the nozzle 142 may be increased.

According to the substrate processing method of this embodiment, the nozzle 132 sprays the cleaning liquid from a position that covers the entire upper surface Wa of the substrate W, and then moves the cleaning liquid to another position before the nozzle 142 starts to eject the organic solvent. , The cleaning liquid and the organic solvent are ejected from the nozzle 132 and the nozzle 142, respectively. In this way, since the washing liquid and the organic solvent are simultaneously sprayed before stopping spraying the washing liquid, the occurrence of water stains can be suppressed. In addition, the cleaning liquid from the nozzle 132 and the organic solvent from the nozzle 142 can cover the entire upper surface Wa of the substrate W, respectively. Therefore, the entire upper surface Wa of the substrate W can be processed with a simple configuration and a small amount of cleaning liquid and organic solvent.

In addition, in the case where the organic solvent and the cleaning liquid are sprayed at the same time, it is preferable that the arrival position of the organic solvent and the arrival position of the cleaning liquid are different. In this case, water stains can be suppressed when the cleaning liquid and the organic solvent are sprayed at the same time.

When the cleaning liquid and the organic solvent reach the same arrival position at the same time and splashing occurs, droplets of the cleaning liquid and the organic solvent may be generated and attached to the cover or the chamber. In this case, when the droplets attached to the cover or the chamber attach to the substrate W during subsequent substrate processing, water stains may occur on the substrate W. In addition, due to splashing, the cleaning liquid and the organic solvent will mist in the chamber. In this case, when the atomized components adhere to the substrate W during subsequent substrate processing, water stains may occur. In addition, due to splashing, when the liquid covering the upper surface Wa of the substrate W splashes and the upper surface Wa of the substrate W is instantaneously exposed, the upper surface Wa of the substrate W may be contaminated and water stains may occur.

Therefore, in the case where the organic solvent and the cleaning liquid are sprayed at the same time, it is preferable that the arrival position of the organic solvent and the arrival position of the cleaning liquid are different. Thereby, it is possible to prevent water stains from occurring when the cleaning liquid and the organic solvent are sprayed at the same time.

In addition, in the case where the cleaning liquid from the nozzle 132 and the organic solvent from the nozzle 142 reach the center of the upper surface Wa of the substrate W, even if the flow rate of each of the cleaning liquid and the organic solvent is small, each of the cleaning liquid and the organic solvent It can also cover the entire upper surface Wa of the substrate W. However, when it is set so that the organic solvent from the nozzle 142 reaches the center of the substrate W together with the cleaning liquid from the nozzle 132 when the organic solvent is ejected from the nozzle 142, the timing of the movement of the cleaning liquid from the nozzle 132 and/or The deviation in the timing of the start of the ejection of the organic solvent from the nozzle 142 is preferably that the arrival position of the cleaning liquid from the nozzle 132 during the cleaning process is slightly away from the center of the substrate W.

Next, the flow of the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 to 3. FIG. 3 is a schematic diagram for explaining the substrate processing method of the substrate processing apparatus 100.

As shown in (a) of FIG. 3, the nozzle 132 ejects the cleaning liquid to the substrate W. The upper surface Wa of the substrate W is cleaned by the cleaning liquid.

Here, the nozzle 132 is arranged obliquely toward the upper surface Wa of the substrate W, and the cleaning liquid ejected from the nozzle 132 is obliquely injected to the upper surface Wa of the substrate W. When a higher flow rate of the cleaning liquid is ejected from the nozzle 132, the cleaning liquid travels linearly from the nozzle 132 toward the upper surface Wa of the substrate W. For example, the flow rate of the cleaning solution is 500 mL/sec or more and 5000 mL/sec or less.

For example, the diameter of the substrate W is 40 mm or more and 400 mm or less. In addition, the thickness of the substrate W is 0.3 mm or more and 2 mm or less.

The substrate holding portion 120 rotates the substrate W while holding the substrate W. The rotation speed of the substrate W is 100 rpm or more and 3000 rpm or less. The substrate W is rotated from (a) in FIG. 3 to (d) in FIG. 3.

The nozzle 132 ejects the cleaning liquid to the center of the substrate W. Thereby, the cleaning liquid reaches the center of the upper surface Wa of the substrate W, and flows from the center so as to cover the entire upper surface Wa of the substrate W. Typically, on the upper surface Wa of the substrate W, the thickness of the cleaning liquid reaching the position is greater than the thickness of the cleaning liquid in other regions.

In addition, the reaching position of the nozzle 132 may also be the center of the upper surface Wa of the substrate W instead of the center of the upper surface Wa of the substrate W. The nozzle 132 may also spray a cleaning liquid near the center of the substrate W. In one example, the nozzle 132 sprays the cleaning liquid to a position separated from the center of the substrate W by 5 mm or more and 30 mm or less. The detailed description will be described later, but it is preferable that the cleaning liquid is sprayed so as to have a component in the opposite direction with respect to the rotation direction of the substrate W.

As shown in FIG. 3(b), the position where the cleaning liquid phase from the nozzle 132 reaches the substrate W is moved. The arrival position of the cleaning liquid from the nozzle 132 moves from the center of the substrate W to the end of the substrate W. At this time, the flow rate of the cleaning liquid from the nozzle 132 is the amount that the cleaning liquid can cover the entire upper surface Wa of the substrate W.

Here, the direction of the nozzle 132 is changed, thereby moving the arrival position of the cleaning liquid from the nozzle 132. For example, the orientation of the nozzle 132 is changed so that the angle between the orientation of the nozzle 132 and the vertical direction becomes smaller.

As shown in FIG. 3(c), after the arrival position of the cleaning liquid phase from the nozzle 132 on the substrate W moves from the center of the substrate W to the end, the nozzle 142 sprays the organic solvent onto the upper surface Wa of the substrate W. Agent. The movement distance of the reaching position of the cleaning liquid is, for example, 5 mm or more and 30 mm or less. For example, the moving distance is 2% or more and 20% or less of the diameter of the substrate W.

For example, the flow rate of the organic solvent from the nozzle 142 is smaller than the flow rate of the cleaning liquid from the nozzle 132 in (a) of FIG. 3. Typically, the flow rate of the organic solvent from the nozzle 142 is 100 mL/sec or more and 1000 mL/sec or less.

As shown in (d) in FIG. 3, the nozzle 142 continues to spray the organic solvent onto the upper surface Wa of the substrate W, and on the other hand, the spray of the cleaning liquid from the nozzle 132 is stopped. The flow rate of the organic solvent from the nozzle 142 is the amount that the organic solvent can cover the entire upper surface Wa of the substrate W.

After a predetermined period of time has elapsed when the organic solvent is sprayed, the spray of the organic solvent is stopped. Furthermore, it is preferable to continue rotating the substrate W after stopping the ejection of the organic solvent, so that the organic solvent on the upper surface Wa of the substrate W is dried.

According to this embodiment, the cleaning liquid from the nozzle 132 is individually sprayed to a position covering the entire upper surface Wa of the substrate W, and then the reaching position of the cleaning liquid is moved to spray the organic solvent on the upper surface Wa of the substrate W. Therefore, the entire upper surface Wa of the substrate W can be covered with the cleaning liquid from the nozzle 132 and the organic solvent from the nozzle 142.

In addition, according to this embodiment, after the cleaning liquid is sprayed individually to a position covering the entire surface of the upper surface Wa of the substrate W, when the organic solvent is sprayed onto the upper surface Wa of the substrate W, the reaching position of the cleaning liquid moves To a position different from the arrival position of the organic solvent. Therefore, since the arrival position of the organic solvent is different from the arrival position of the cleaning liquid when the organic solvent is sprayed, even if the cleaning liquid and the organic solvent are sprayed to the upper surface Wa of the substrate W at the same time, it is possible to suppress the occurrence of problems due to splashing.

Furthermore, according to this embodiment, the rotation speed of the substrate W does not need to be changed. Therefore, the processing throughput of the substrate W is not reduced, and the substrate W can be processed with a cleaning liquid and an organic solvent.

In addition, in FIG. 3, although the flow rate of the cleaning liquid is not changed before and after the movement of the arrival position of the cleaning liquid, the present embodiment is not limited to this. The flow rate of the cleaning liquid may be changed before and after the movement of the arrival position of the cleaning liquid.

Next, the flow of the substrate processing method of this embodiment will be described with reference to FIGS. 1 to 4. Fig. 4(a) to Fig. 4(d) are schematic diagrams for explaining the substrate processing method of this embodiment. In addition, since (a) in Fig. 4 to (d) in Fig. 4 (a) in Fig. 4 and (d) in Fig. 4 are the same as those in (a) and Fig. 3 described above. (D) in 3 is the same, so in order to avoid redundancy, repeated descriptions are omitted.

As shown in (a) of FIG. 4, the cleaning liquid is sprayed onto the upper surface Wa of the substrate W from the nozzle 132. Here, the nozzle 132 sprays the cleaning liquid onto the upper surface Wa of the substrate W from an oblique direction.

As shown in FIG. 4(b), the arrival position of the cleaning liquid from the nozzle 132 is moved and the flow rate of the cleaning liquid is reduced. However, even in this case, the cleaning liquid is sprayed so as to cover the center of the upper surface Wa of the substrate W. In addition, it is preferable that the flow rate of the cleaning liquid is such that the cleaning liquid covers the entire surface of the upper surface Wa of the substrate W.

As shown in FIG. 4(c), in a state where the flow rate of the cleaning liquid from the nozzle 132 has been reduced, the organic solvent is sprayed from the nozzle 142 to the upper surface Wa of the substrate W. Here, it is preferable that the flow rate of the organic solvent is an amount capable of covering the entire upper surface Wa of the substrate W.

As shown in (d) of FIG. 4, the supply of the cleaning liquid is stopped, and on the other hand, the organic solvent is continuously sprayed from the nozzle 142. Thereby, the organic solvent covers the entire upper surface Wa of the substrate W. In addition, the flow rate of the organic solvent from the nozzle 142 may be increased from before the supply of the cleaning liquid is stopped to after the supply of the cleaning liquid is stopped.

According to this embodiment, when the organic solvent is ejected from the nozzle 142, as the arrival position of the cleaning liquid moves away from the center of the substrate W, the flow rate of the cleaning liquid also decreases. Therefore, even if it is ejected from the nozzle 142 Organic solvents can also prevent water stains from splashing caused by spraying organic solvents and cleaning fluids at the same time.

In addition, in FIG. 4, although the flow rate of the cleaning liquid from the nozzle 132 is reduced before the organic solvent is ejected from the nozzle 142, this embodiment is not limited to this. It is also possible to move the arrival position of the cleaning liquid without changing the flow rate of the cleaning liquid from the nozzle 132, and start to eject the organic solvent from the nozzle 142 and increase the flow rate of the organic solvent. However, typically, since the flow rate of the cleaning liquid during the cleaning process is larger than the flow rate of the organic solvent during the organic solvent process, the flow rate of the cleaning liquid can be changed considerably.

In addition, it is preferable to treat the substrate W with a chemical solution before processing with the cleaning solution and the organic solvent in this embodiment. In addition, it is preferable to dry the upper surface Wa of the substrate W after processing with an organic solvent.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. 5. FIG. 5 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. In addition, the substrate processing apparatus 100 of FIG. 5 has the same structure as the substrate processing apparatus 100 described with reference to FIG. Because it is lengthy, duplicate records are omitted. The substrate processing apparatus 100 of this embodiment includes a chamber 110, a substrate holding portion 120, a cleaning liquid supply portion 130, and an organic solvent supply portion 140, and further includes a chemical solution supply portion 150, a shielding member 160, and a gas supply portion 170.

The chemical liquid supply unit 150 supplies the chemical liquid to the upper surface Wa of the substrate W. The substrate W can be processed by the chemical liquid. For example, the substrate W is subjected to at least one of etching, surface treatment, property imparting, treatment film formation, removal of at least a part of the film, and cleaning with a chemical solution.

For example, the chemical liquid system contains hydrofluoric acid (HF; hydrofluoric acid) (hydrogen fluoride water). Alternatively, the chemical solution may also contain sulfuric acid, acetic acid, nitric acid, hydrochloric acid, citric acid, buffered hydrogen fluoride (BHF), diluted hydrofluoric acid (DHF), ammonia, diluted ammonia, peroxide Liquid of at least one of hydrogen water, organic alkali (for example, TMAH (tetramethyl ammonium hydroxide; tetramethyl ammonium hydroxide), etc.), surfactant, and corrosion inhibitor. In addition, the liquid medicine may be a mixed liquid mixed with the liquids described above. For example, as an example of a chemical solution mixed with these liquids, SPM (sulfuric acid/hydrogen peroxide mixture; sulfuric acid/hydrogen peroxide mixture), SC1 (Standard clean-1; the first standard cleaning solution; that is, ammonia water) can be cited. Ammonia-hydrogen peroxide), SC2 (Standard clean-2; second standard cleaning solution; that is, hydrochloric acid-hydrogen peroxide mixture), etc.

The chemical liquid supply unit 150 includes a chemical liquid nozzle 152, a supply pipe 154, and a valve 156. The nozzle 152 is opposed to the upper surface Wa of the substrate W, and sprays the chemical liquid toward the upper surface Wa of the substrate W. The supply pipe 154 is coupled to the nozzle 152. The nozzle 152 is provided at the front end of the supply pipe 154. The supply pipe 154 is supplied with a liquid medicine from a supply source. The valve 156 is provided in the supply pipe 154. The valve 156 opens and closes the flow path in the supply pipe 154. In this specification, the chemical liquid nozzle 152 may be simply referred to as the nozzle 152 in some cases.

The chemical liquid supply unit 150 further includes a nozzle moving unit 158. The nozzle moving unit 158 moves the nozzle 152 between the ejection position and the retracted position. In the case where the nozzle 152 is located at the ejection position, the nozzle 152 is located above the substrate W. In the case where the nozzle 152 is located at the ejection position, the nozzle 152 ejects the chemical liquid toward the upper surface Wa of the substrate W. In the case where the nozzle 152 is located at the retracted position, the nozzle 152 is located outside the substrate W in the radial direction of the substrate W.

The nozzle moving part 158 includes an arm 158a, a rotating shaft 158b, and a nozzle moving mechanism 158c. The arm 158a extends in a slightly horizontal direction. A nozzle 152 is attached to the front end of the arm 158a. Arm 158a It is coupled to the rotating shaft 158b. The rotating shaft 158b extends in a substantially vertical direction. The nozzle moving mechanism 158c rotates the rotation shaft 158b around a rotation axis along a substantially vertical direction, so that the arm 158a rotates along a substantially horizontal plane. As a result, the nozzle 152 moves along a slightly horizontal plane. For example, the nozzle moving mechanism 158c includes an arm swing motor that rotates the rotation shaft 158b around the rotation axis. The arm swing motor is, for example, a servo motor. In addition, the nozzle moving mechanism 158c raises and lowers the rotating shaft 158b in a substantially vertical direction, thereby raising and lowering the arm 158a. As a result, the nozzle 152 moves in a slightly vertical direction. For example, the nozzle moving mechanism 158c includes a ball screw mechanism and an arm lift motor, and the arm lift motor applies driving force to the ball screw mechanism. The arm lifting motor is, for example, a servo motor.

The shielding member 160 is located above the clamp member 122. The shielding member 160 includes a shielding plate 162, a support shaft 164 and a nozzle 166.

The shielding plate 162 is, for example, a substantially circular plate shape. The diameter of the shielding plate 162 is approximately the same as the diameter of the substrate W, for example. However, the diameter of the shielding plate 162 may also be slightly smaller than the diameter of the substrate W, or may also be slightly larger than the diameter of the substrate W. The shielding plate 162 is arranged so that the lower surface of the shielding plate 162 becomes approximately horizontal. Furthermore, the shielding plate 162 is arranged such that the center axis of the shielding plate 162 is located on the rotation axis AX of the substrate holding portion 120. The lower surface of the shielding plate 162 is opposed to the upper surface Wa of the substrate W held by the clamp member 122. The shielding plate 162 is connected to the lower end of the support shaft 164 in a horizontal posture. The nozzle 166 supplies fluid to the upper surface Wa of the substrate W.

The shielding member 160 may further include a unit moving part 168. As shown in FIG. 5, the unit moving part 168 includes an arm 168a, a rotating shaft 168b, and a nozzle moving mechanism 168c. The unit moving part 168 raises or lowers the shielding plate 162 with respect to the substrate W between the approaching position and the retracted position. In the case where the shielding plate 162 is located at the close position, the shielding plate 162 is lowered and approached to the upper surface of the substrate W at a predetermined interval. In the approaching position, the shielding plate 162 covers the surface of the substrate W and shields the upper side of the substrate W. In the case where the shielding plate 162 is located at the retracted position, the shielding plate 162 is located above the approaching position. When the shielding plate 162 changes from the approaching position to the retracted position, the shielding plate 162 rises and moves away from the substrate W. In FIG. 5, the shielding plate 162 is located at the retracted position. For example, the unit moving part 168 includes a ball screw mechanism and an elevating motor, and the elevating motor applies driving force to the ball screw mechanism. The lifting motor is, for example, a servo motor.

In addition, the proximity position of the shielding plate 162 may also include a first proximity position and a second proximity position. In the case where the shielding plate 162 is located at the first close position, the shielding plate 162 covers the upper surface Wa of the substrate W and shields the upper surface of the substrate W. In addition, when the shielding plate 162 is located at the second proximity position, the shielding plate 162 is closer to the upper surface Wa of the substrate W than the first proximity position, covering the upper surface Wa of the substrate W and shielding the upper side of the substrate W.

The gas supply unit 170 includes a gas nozzle 172, a supply pipe 174, and a valve 176. The nozzle 172 is opposed to the upper surface Wa of the substrate W and ejects gas toward the upper surface Wa of the substrate W. The supply pipe 174 is coupled to the nozzle 172. The nozzle 172 is provided at the tip of the supply pipe 174. The supply pipe 174 is supplied with gas from a supply source. For example, the gas is an inert gas. Typically, the gas contains nitrogen. The valve 176 is provided in the supply pipe 174. The valve 176 opens and closes the flow path in the supply pipe 174. In this specification, the gas nozzle 172 may be simply referred to as the nozzle 172.

Here, the nozzle 142 of the organic solvent supply unit 140 and the nozzle 172 of the gas supply unit 170 are provided as the nozzle 166 of the shielding member 160. Therefore, the shielding member 160 ejects the organic solvent from the nozzle 142. In addition, the shielding member 160 ejects gas from the nozzle 172.

Hereinafter, the flow of the substrate processing method of this embodiment will be described with reference to FIG. 1, FIG. 5, and FIG. 6. FIG. FIG. 6 is a flowchart for explaining the substrate processing method of this embodiment. In addition, the steps of Figure 6 S102 to step S108 are the same as step S102 to step S108 already described with reference to FIG.

In step S100a, the substrate W is carried into the chamber 110. After that, the substrate W is set on the substrate holding portion 120 so as to be held by the substrate holding portion 120. Specifically, the substrate W is placed on the rotation base 121 such that the upper surface Wa faces upward, and is then mounted on the rotation base 121. In a state where the back surface Wb of the substrate W is opposed to the upper surface of the rotation base 121, the substrate W is held by the substrate holding portion 120.

In step S100b, the electric motor 124 starts to rotate the substrate W. At this time, the cover 180 is raised to the side of the substrate W.

In step S101, the valve 156 is opened, and the spray of the chemical liquid from the nozzle 152 of the chemical liquid supply unit 150 toward the upper surface Wa of the substrate W is started. The chemical solution supplied to the upper surface Wa of the substrate W spreads over the entire upper surface Wa of the substrate W by centrifugal force. In this way, the substrate W is processed by the chemical liquid. At this time, the nozzle 152 of the chemical liquid supply unit 150 moves from the retracted position to the ejection position.

In step S102, the valve 136 is opened, and the spray of the cleaning liquid from the nozzle 132 of the cleaning liquid supply unit 130 toward the upper surface Wa of the substrate W is started. The cleaning liquid supplied to the upper surface Wa of the substrate W spreads to the entire upper surface Wa of the substrate W by centrifugal force. Thereby, the substrate W is processed by the cleaning liquid. At this time, the nozzle 152 of the chemical liquid supply unit 150 moves from the ejection position to the retracted position.

In step S104, the arrival position of the cleaning liquid from the nozzle 132 toward the substrate W is moved. For example, the arrival position of the cleaning liquid moves from the center of the substrate W to the end of the substrate W.

In step S106, the valve 146 is opened while maintaining the spray of the cleaning liquid, and the spray of the organic solvent from the nozzle 142 of the organic solvent supply unit 140 toward the upper surface Wa of the substrate W is started. At this time, the shielding plate 162 is moved from the retracted position to the approaching position. For example, the shielding plate 162 is moved to the first close position.

In step S108, with the valve 146 opened, the nozzle 142 of the organic solvent supply unit 140 continues to spray the organic solvent toward the upper surface Wa of the substrate W. The organic solvent supplied to the upper surface Wa of the substrate W spreads to the entire upper surface Wa of the substrate W by centrifugal force. Thereby, the substrate W is processed by the organic solvent.

In step S110, the upper surface Wa of the substrate W is dried. At this time, the valve 146 is closed, and the ejection of the organic solvent from the nozzle 142 of the organic solvent supply unit 140 toward the upper surface Wa of the substrate W is stopped. In addition, gas is ejected from the nozzle 172 toward the upper surface Wa of the substrate W. At this time, the shielding plate 162 can also be moved from the first proximity position to the second proximity position.

In step S112, the substrate W is carried out from the chamber 110. At this time, the substrate W is removed from the substrate holding portion 120. Specifically, the substrate W is detached from the rotation base 121.

As described above, the substrate W may be dried after processing the substrate W with a chemical solution, a cleaning solution, and an organic solvent. As described above, the substrate processing method of this embodiment is suitable for the substrate W that has been subjected to hydrophobization treatment. Therefore, it is preferable to hydrophobize the upper surface Wa of the substrate W in the chemical liquid treatment. For example, it is preferable to use hydrofluoric acid as the chemical liquid.

Next, the flow of the substrate processing method of this embodiment will be described with reference to FIGS. 5 to 9. 7 to 9 are schematic diagrams for explaining the substrate processing method of this embodiment.

First, as shown in FIG. 7(a), the substrate W is carried in. The loaded substrate W is mounted on the substrate holding unit 120. The substrate W may also be carried in by a robot.

As shown in (b) of FIG. 7, the substrate W is rotated by the substrate holding portion 120. In addition, the rotation of the substrate W can continue until the drying of the substrate W is completed.

As shown in (c) of FIG. 7, the chemical liquid is sprayed from the nozzle 152 to the upper surface Wa of the substrate W. As shown in FIG. The chemical solution covers the upper surface Wa of the substrate W. Thereby, the substrate W is processed by the chemical liquid.

As shown in (a) of FIG. 8, the cleaning liquid is sprayed from the nozzle 132 to the upper surface Wa of the substrate W. Thereby, the substrate W is processed by the cleaning liquid. The substrate W is cleaned by the cleaning liquid. The cleaning liquid covers the upper surface Wa of the substrate W. At this time, the reaching position of the cleaning liquid is the center of the upper surface Wa of the substrate W. However, the arrival position of the cleaning liquid is not the center of the upper surface Wa of the substrate W, but the approximate center of the upper surface Wa of the substrate W.

As shown in (b) of FIG. 8, the reaching position of the cleaning liquid sprayed from the nozzle 132 to the upper surface Wa of the substrate W moves from the center of the upper surface Wa of the substrate W to the outside. For example, while reducing the flow rate of the cleaning liquid sprayed from the nozzle 132, the arrival position of the cleaning liquid is moved from the center of the substrate W to the outside.

As shown in (c) of FIG. 8, in a state where the arrival position of the cleaning liquid has moved from the center of the substrate W toward the outside, the organic solvent is ejected from the nozzle 142 of the shielding member 160 to the upper surface Wa of the substrate W. At this time, the shielding plate 162 is moved from the retracted position to the first approach position.

In addition, the distance between the arrival position of the organic solvent from the nozzle 142 and the center of the upper surface Wa of the substrate W is shorter than the distance between the arrival position of the cleaning liquid and the center of the upper surface Wa of the substrate W. Typically, the arrival position of the organic solvent from the nozzle 142 is approximately the center of the upper surface Wa of the substrate W.

As shown in (a) of FIG. 9, the spray of the organic solvent from the nozzle 142 is continued, and on the other hand, the spray of the cleaning liquid from the nozzle 132 is stopped. The upper surface Wa of the substrate W is covered with an organic solvent.

As shown in (b) of FIG. 9, after a predetermined period of time has elapsed since the spraying of the organic solvent from the nozzle 142 has continued, the spraying of the organic solvent from the nozzle 142 is stopped, and the gas is supplied to the substrate W from the nozzle 172 of the shielding member 160. In addition, the substrate holding portion 120 continues to rotate the substrate W. Thereby, the upper surface Wa of the substrate W can be dried. In addition, it is preferable that when the shielding member 160 supplies gas to the substrate W, the shielding plate 162 is lowered to the second proximity position of the substrate W. Thereby, the upper surface Wa of the substrate W can be dried in a gas atmosphere.

As shown in (c) of FIG. 9, the substrate W is detached from the substrate holding portion 120 and the substrate W is carried out. The substrate W can also be carried out by a robot. According to the above description, the substrate W can be processed.

In addition, as described above, the cleaning liquid supply unit 130 may supply the cleaning liquid to the substrate W obliquely. In this case, it is preferable that the cleaning liquid is sprayed so as to have a component facing the opposite direction with respect to the rotation direction R of the substrate W.

Hereinafter, the change of the arrival position of the cleaning liquid to the substrate W in the substrate processing apparatus 100 of the present embodiment will be described with reference to FIGS. 1, 2 and 10. Fig. 10(a) is a schematic perspective view showing the arrival position of the cleaning liquid with respect to the substrate W before the arrival position of the cleaning liquid moves, and Fig. 10(b) shows the time after the arrival position of the cleaning liquid is moved A schematic perspective view of the arrival position of the cleaning liquid phase with respect to the substrate W.

As shown in FIG. 10(a), the nozzle 132 is arranged on the radially outer side of the upper surface Wa of the substrate W, and the nozzle 132 sprays the cleaning liquid in an oblique direction. The cleaning fluid sprayed from the nozzle 132 reaches the center of the upper surface Wa of the substrate W. Here, the cleaning solution reaches the approximate center of the upper surface Wa of the substrate W. At this time, the cleaning fluid system will travel along the travel direction L.

On the other hand, the substrate W is rotated in the rotation direction R, and the cleaning liquid is supplied to the substrate W rotated in the rotation direction R. Therefore, the cleaning liquid system that has reached the reached position receives the force along the rotation direction R.

(A) in FIG. 10 shows that the traveling direction L of the cleaning liquid is divided into the component La along the normal direction from the reaching position and the component Lb from the reaching position toward the center. Since the component La in the direction of travel L is opposite to the direction of rotation R, the cleaning solution that has reached the reached position stays longer It spreads on the upper surface Wa of the substrate W and on the upper surface Wa of the substrate W so as to cover the center O of the upper surface Wa of the substrate W. After that, the cleaning solution spreads over the entire upper surface Wa of the substrate W and covers the entire upper surface Wa of the substrate W. In this way, the cleaning liquid is ejected to the reaching position so as to have a component in the direction opposite to the rotation direction of the substrate W, whereby the cleaning liquid can sufficiently cover the center O of the substrate W even if the flow rate of the cleaning liquid is small.

As shown in FIG. 10(b), before the organic solvent is ejected from the nozzle 142 or at the same time as the organic solvent is ejected, the arrival position of the cleaning liquid from the nozzle 132 moves from the center of the upper surface Wa of the substrate W to Outside. For example, by reducing the flow rate of the cleaning liquid, the arrival position of the cleaning liquid is moved from the center of the upper surface Wa of the substrate W to the outside. However, it is preferable that the flow rate of the cleaning liquid at this time is also an amount that can cover at least the center of the upper surface Wa of the substrate W.

In addition, in the substrate processing apparatus 100 shown in FIGS. 1 to 10, although the cleaning liquid supply unit 130 is arranged to supply the cleaning liquid to the substrate W obliquely, this embodiment is not limited to this. The cleaning liquid supply unit 130 may also supply the cleaning liquid to the substrate W vertically. In addition, in the substrate processing apparatus 100 shown in FIGS. 1 to 10, although the nozzle 132 of the cleaning liquid supply unit 130 is fixed, the present embodiment is not limited to this. The nozzle 132 can also move.

The substrate processing apparatus 100 of this embodiment will be described with reference to FIG. 11. FIG. 11 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. In addition, the substrate processing apparatus 100 of FIG. 11 excludes the point where the cleaning liquid supply unit 130 further includes the nozzle moving unit 138 and the point where the cleaning liquid is sprayed perpendicularly from the nozzle 132 to the upper surface Wa of the substrate W. The described substrate processing apparatus 100 has the same configuration, and therefore redundant descriptions are omitted in order to avoid redundancy.

Here, the nozzle 132 faces the upper surface Wa of the substrate W perpendicularly. The cleaning liquid is sprayed perpendicularly to the upper surface Wa of the substrate W from the nozzle 132.

The cleaning liquid supply unit 130 further includes a nozzle moving unit 138. The nozzle moving unit 138 moves the nozzle 132 between the ejection position and the retracted position. In the case where the nozzle 132 is located at the ejection position, the nozzle 132 is located above the substrate W. When the nozzle 132 is at the ejection position, the nozzle 132 ejects the cleaning liquid toward the upper surface Wa of the substrate W. In the case where the nozzle 132 is located at the retracted position, the nozzle 132 is located outside the substrate W in the radial direction of the substrate W.

Specifically, the nozzle moving part 138 includes an arm 138a, a rotating shaft 138b, and a nozzle moving mechanism 138c. The arm 138a extends in a slightly horizontal direction. A nozzle 132 is attached to the front end of the arm 138a. The arm 138a is coupled to the rotating shaft 138b. The rotating shaft 138b extends in a substantially vertical direction. The nozzle moving mechanism 138c rotates the rotation shaft 138b around a rotation axis along a substantially vertical direction, so that the arm 138a rotates along a substantially horizontal plane. As a result, the nozzle 132 moves along a slightly horizontal plane. For example, the nozzle moving mechanism 138c includes an arm swing motor that rotates the rotation shaft 138b around the rotation axis. The arm swing motor is, for example, a servo motor. In addition, the nozzle moving mechanism 138c raises and lowers the rotating shaft 138b in a substantially vertical direction, thereby raising and lowering the arm 138a. As a result, the nozzle 132 moves in a slightly vertical direction. For example, the nozzle moving mechanism 138c includes a ball screw mechanism and an arm lift motor, and the arm lift motor applies driving force to the ball screw mechanism. The arm lifting motor is, for example, a servo motor.

Next, the flow of the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 11 and 12. FIG. 12 is a schematic diagram for explaining the substrate processing method of the substrate processing apparatus 100 of this embodiment.

As shown in FIG. 12(a), the nozzle 132 sprays the cleaning liquid toward the upper surface Wa of the substrate W. As shown in FIG. Here, the cleaning liquid system ejected from the nozzle 132 reaches the center of the upper surface Wa of the substrate W. Thereby, the substrate W is processed by the cleaning liquid. Here, the nozzle 132 is located at the ejection position.

As shown in FIG. 12(b), the nozzle 132 is moved while the nozzle 132 is spraying the cleaning liquid. Here, the cleaning fluid sprayed from the nozzle 132 moves from the center of the substrate W to the outside. The nozzle 132 starts to move from the ejection position to the retreat position. At this time, the center of the upper surface Wa of the substrate W is covered with the cleaning liquid.

As shown in FIG. 12(c), the nozzle 132 sprays the cleaning liquid, and the nozzle 142 starts to spray the organic solvent. The nozzle 142 moves from the retracted position to the ejection position. In this case, the distance between the arrival position of the organic solvent and the center of the substrate W is shorter than the distance between the arrival position of the cleaning liquid and the center of the substrate W. Typically, the organic solvent sprayed from the nozzle 142 to the upper surface Wa of the substrate W reaches the center of the substrate W.

As shown in (d) of FIG. 12, the spray of the organic solvent from the nozzle 142 is continued, and on the other hand, the spray of the cleaning liquid from the nozzle 132 is stopped. Here, the nozzle 132 moves from the ejection position to the retracted position. In this case, the upper surface Wa of the substrate W is covered with the organic solvent. After that, the organic solvent is continuously sprayed from the nozzle 142 for a predetermined period of time, and then the spray of the organic solvent is stopped. Furthermore, it is also possible to dry the upper surface Wa of the substrate W immediately after stopping the ejection of the organic solvent. The drying of the substrate W can also be performed by continuously rotating the substrate W. Alternatively, the drying of the substrate W may be performed by further increasing the rotation speed of the substrate W. Furthermore, the drying of the substrate W can also be performed by supplying gas from the shielding member 160 shown in FIG. 5.

As described above, according to this embodiment, after the cleaning liquid is supplied so as to cover the upper surface Wa of the substrate W, the nozzle 132 is moved to move the arrival position of the cleaning liquid, and the organic solvent is sprayed to the upper surface Wa of the substrate W. The upper surface Wa of the substrate W is covered. Therefore, it is possible to prevent the cleaning liquid from the nozzle 132 and the organic solvent from the nozzle 142 from being ejected at the same arrival position, and it is possible to prevent the occurrence of problems due to splashing. Furthermore, according to this embodiment, by the movement of the nozzle 132, the cleaning liquid sprayed from the nozzle 132 is used to cover the upper surface Wa of the substrate W and cover the substrate just before the organic solvent is sprayed. At least a part of the upper surface Wa of the board W. Therefore, it is possible to suppress the occurrence of water stains when the cleaning liquid and the organic solvent are sprayed with a simple configuration.

In addition, in the above description with reference to FIG. 12, although the flow rate of the cleaning liquid from the nozzle 132 does not change after the nozzle 132 starts moving until the nozzle 142 starts to eject the organic solvent, the present embodiment is not limited to this. It is also possible to reduce the flow rate of the cleaning liquid from the nozzle 132 after the nozzle 132 starts to move until the nozzle 142 starts to eject the organic solvent.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. 13. The difference from the above-mentioned substrate processing apparatus 100 is that the substrate processing apparatus 100 of this embodiment includes a plurality of chambers 110. However, in order to avoid redundant description, duplicate descriptions are omitted.

FIG. 13 is a schematic plan view of the substrate processing apparatus 100. As shown in FIG. 13, the substrate processing apparatus 100 includes a component liquid cabinet 100A, a plurality of fluid tanks 100B, a plurality of chambers 110, a plurality of load ports LP, an indexer robot IR, and a center robot ( center robot) CR and control device 101. The control device 101 controls the load port LP, the index robot IR, and the center robot CR. The control device 101 includes a control unit 102 and a storage unit 104.

The load ports LP are stacked and accommodate a plurality of substrates W respectively. The index robot IR transports the substrate W between the load port LP and the center robot CR. The center robot CR transfers the substrate W between the index robot IR and the chamber 110. In each chamber 110, a cleaning liquid and/or an organic solvent are sprayed to the substrate W to process the substrate W. The fluid tanks 100B respectively contain fluid devices. The component liquid cabinet 100A contains a chemical liquid, a cleaning liquid, and/or an organic solvent.

Specifically, the plurality of chambers 110 form a plurality of towers TW (four towers TW in FIG. 13), and the plurality of towers TW are arranged so as to surround the central robot CR when viewed from above. Each tower TW includes a plurality of chambers 110 (three chambers 110 in FIG. 13) stacked one above the other. Multiple streams The body box 100B corresponds to a plurality of towers TW, respectively. The chemical solution, cleaning solution, and/or organic solvent in the component liquid tank 100A are supplied to all the chambers 110 included in the tower TW corresponding to the fluid tank 100B via a certain fluid tank 100B.

The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above-mentioned embodiments, and can be implemented in various aspects without departing from the scope of the present invention. In addition, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above-mentioned embodiments. For example, some of the constituent elements shown in the embodiment may be deleted. Furthermore, it is also possible to appropriately combine the constituent elements in different embodiments. In order to facilitate the understanding of the present invention, the drawings show each constituent element subjectively and schematically, and the thickness, length, number, interval, etc. of each constituent element shown may also be related to each other due to the relationship drawn by the drawing. Actually different situation. In addition, the material, shape, size, etc. of each component shown in the above-mentioned embodiment is an example, and is not particularly limited, and various changes can be made within a range that does not substantially deviate from the effect of the present invention.

[Industry Availability]

The present invention is applicable to substrate processing apparatuses, substrate processing methods, and semiconductor manufacturing methods.

Claims (15)

A substrate processing apparatus is provided with: a substrate holding part that rotatably holds a substrate; a cleaning liquid supply part having a cleaning liquid nozzle for spraying cleaning liquid obliquely to the upper surface of the substrate; an organic solvent supply part having An organic solvent nozzle for spraying an organic solvent onto the upper surface of the substrate; and a control unit that controls the cleaning liquid supply unit and the organic solvent supply unit; the control unit covers the upper surface of the substrate with the cleaning liquid In this way, the cleaning liquid nozzle ejects the cleaning liquid to the center of the upper surface of the substrate, and the ejection amount of the cleaning liquid ejected from the cleaning liquid nozzle is reduced, so that the cleaning liquid reaches the arrival position of the substrate Move from the center of the upper surface of the substrate to the outside, and in a state where the arrival position of the cleaning liquid has moved from the center to the outside of the substrate, the organic solvent nozzle starts to spray the organic solvent to the center of the upper surface of the substrate. After that, the supply of the cleaning liquid is stopped, and the organic solvent is sprayed from the organic solvent nozzle to the center of the upper surface of the substrate so that the organic solvent covers the upper surface of the substrate. The substrate processing apparatus according to claim 1, wherein the cleaning liquid nozzle is fixed in such a manner that the ejection amount of the cleaning liquid is reduced, whereby the arrival position of the cleaning liquid is moved from the center of the upper surface of the substrate To the outside. The substrate processing apparatus according to claim 2, wherein the cleaning liquid nozzle is fixed to a chamber provided in the substrate holding portion. The substrate processing apparatus according to claim 1 or 2, wherein the control unit controls the cleaning liquid to cover the center of the upper surface of the substrate when the arrival position of the cleaning liquid from the cleaning liquid nozzle is moved. Cleaning fluid supply part. The substrate processing apparatus according to claim 1 or 2, wherein the cleaning liquid nozzle sprays the cleaning liquid so that the cleaning liquid that has reached the arrival position of the substrate has a component in the opposite direction to the rotation direction of the substrate . The substrate processing apparatus according to claim 1 or 2, wherein the cleaning liquid nozzle ejects the cleaning liquid without moving during the period from when the cleaning liquid is started to be sprayed to when the ejection of the cleaning liquid is stopped. The substrate processing apparatus according to claim 1, wherein the cleaning liquid nozzle is moved from the start of spraying the cleaning liquid to the stop of the spraying of the cleaning liquid. The substrate processing apparatus according to claim 1 or 2, wherein the organic solvent nozzle ejects the organic solvent without moving during the period from the start of ejecting the organic solvent to the stop of ejecting the organic solvent. The substrate processing apparatus according to claim 1 or 2, wherein the control section controls the substrate holding section to continuously rotate the substrate after stopping the ejection of the organic solvent from the organic solvent nozzle. The substrate processing apparatus according to claim 1 or 2, further comprising: a shielding member having a shielding plate facing the upper surface of the substrate. The substrate processing apparatus according to claim 10, wherein the shielding member has the organic solvent nozzle. The substrate processing apparatus according to claim 10, wherein the shielding member has a gas nozzle for supplying gas to the upper surface of the substrate. A substrate processing method comprising: a step of rotating the substrate while holding the substrate; a step of spraying a cleaning liquid obliquely to the upper surface of the substrate from a cleaning liquid nozzle; and spraying organic solvent to the upper surface of the substrate from an organic solvent nozzle. Solvent process; in the process for spraying the cleaning liquid and the process for spraying the organic solvent, the cleaning liquid nozzle is applied to the upper surface of the substrate in such a manner that the cleaning liquid covers the upper surface of the substrate The cleaning liquid is ejected from the center, and the ejection amount of the cleaning liquid ejected from the cleaning liquid nozzle is reduced, so that the arrival position of the cleaning liquid to the substrate is moved from the center of the upper surface of the substrate to the outside. When the arrival position of the cleaning liquid has moved from the center of the substrate to the outside, the organic solvent nozzle starts to spray the organic solvent to the center of the upper surface of the substrate, and then the supply of the cleaning liquid is stopped and covered with the organic solvent. In the manner of the upper surface of the substrate, the organic solvent is sprayed from the organic solvent nozzle to the center of the upper surface of the substrate. The substrate processing method according to claim 13, wherein in the step for rotating the substrate, the substrate is subjected to a hydrophobization treatment. The substrate processing method according to claim 13, further comprising: applying a chemical liquid treatment to the substrate before spraying the cleaning liquid.

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