TWI742392B - Correction method, substrate processing device, and substrate processing system - Google Patents

Abstract

A correction method includes acquiring, generating, and correcting. In the acquiring, at least one of execution conditions for execution of etching and at least one of feature values indicating a result of execution of etching are acquired. In the generating, correction data for correcting at least one of settings of a substrate processing device (100) is generated based on the at least one execution condition and the at least one feature level. In the correcting, the substrate processing device (100) corrects the at least one setting based on the correction data.

Description

Correction method, substrate processing device and substrate processing system

The present invention relates to a correction method, a substrate processing device and a substrate processing system.

A substrate processing apparatus that etches a substrate is known. The state of the substrate processing apparatus changes based on the deterioration of the parts constituting the substrate processing apparatus over the years, the deviation of the position of the parts caused by the replacement of the parts constituting the substrate processing apparatus, and the like. Therefore, in order to perform the best etching, there is a need to appropriately correct various setting conditions of the substrate processing apparatus. Specifically, the film thickness of the substrate to be etched is measured, and when the etching amount does not show a desired value, there is a need to correct the set conditions. The film thickness of the substrate is measured using a film thickness measuring device (for example, refer to Patent Document 1).

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2013-134065

However, the correction of the setting conditions takes a long time, and the operator manually performs it, which becomes a burden on the operator.

The present invention was made in view of the above-mentioned problems, and its object is to provide a correction method, a substrate processing apparatus, and a substrate processing system that can reduce the burden on an operator.

The correction method of the present invention is one that corrects the setting conditions of the substrate processing apparatus for etching the substrate; it includes: an obtaining step, which obtains at least one execution condition among the execution conditions when the etching is executed, and represents the etching At least one characteristic quantity of the execution result; a generating step, which is based on the above at least one execution condition and the above at least one characteristic quantity, generating correction data for correcting at least one of the above setting conditions; and a correction step , Which is that the substrate processing apparatus corrects the at least one setting condition based on the correction data.

In one embodiment, in the above-mentioned obtaining step, the above-mentioned at least one execution condition and the above-mentioned at least one feature quantity are input to the learned model generated by machine learning.

In one embodiment, in the generating step, the correction data is output from the learned model.

In one embodiment, the correction method further includes a learning step of mechanically learning the guidance information to generate the learned model.

In one embodiment, the above-mentioned guidance information is information obtained when the above-mentioned at least one characteristic quantity is an optimal value, and includes the above-mentioned at least one characteristic quantity, the above-mentioned at least one execution condition, and the above-mentioned at least one characteristic quantity. 1 set condition.

In one embodiment, the at least one feature quantity includes at least one of the etching amount and the uniformity of the etching amount.

In one embodiment, the above-mentioned substrate processing apparatus includes a processing chamber, a first nozzle, a supply flow path, a liquid receiving portion, a second nozzle, a fan filter unit, and an exhaust fan. The processing chamber accommodates the substrate. The first nozzle discharges a processing liquid for etching the substrate toward the substrate. The supply flow path supplies the processing liquid to the first nozzle. The liquid receiving portion receives the processing liquid scattered from the substrate. The second nozzle ejects gas toward the substrate. The fan filter unit sends air into the processing chamber. The exhaust fan exhausts gas from the processing chamber.

In one embodiment, the execution conditions when the etching is executed include the temperature of the processing liquid at the front end of the first nozzle, the temperature of the gas at the front end of the second nozzle, and the processing liquid discharged from the first nozzle. The flow rate of the gas from the second nozzle, the time when the treatment liquid starts to be discharged from the first nozzle, the time when the gas starts to be discharged from the second nozzle, and the flow rate of the treatment liquid from the first nozzle. The time when the discharge is stopped, the time when the discharge of the gas from the second nozzle is stopped, the time when the flow rate of the treatment liquid from the first nozzle is changed, and the flow rate of the gas from the second nozzle is changed Time point, the rising characteristic of the flow rate of the treatment liquid discharged from the first nozzle, the rising characteristic of the flow rate of the gas discharged from the second nozzle, the decreasing characteristic of the flow rate discharged from the first nozzle of the treatment liquid, the above The characteristics of the decrease in the flow rate of the gas ejected from the second nozzle, the information indicating whether the processing liquid is dripping from the front end of the first nozzle, the concentration of the processing liquid flowing through the supply flow path, and the discharge of the processing liquid After stopping, the speed at which the processing liquid is sucked from the first nozzle toward the upstream side of the supply flow path, the position where the sucked processing liquid stops, the film thickness distribution of the processing liquid covering the substrate, and the difference between the first nozzle The position, the moving speed of the above-mentioned first nozzle, the acceleration of the above-mentioned first nozzle, the time when the position of the above-mentioned first nozzle is changed, the time when the moving speed of the above-mentioned first nozzle is changed, indicate whether the processing liquid is attached to the liquid receiving portion Information, the amount of the processing liquid attached to the liquid-receiving part, the rotation speed of the substrate, the acceleration of the substrate, the time when the rotation speed of the substrate is changed, the surface temperature of the substrate, the amount of eccentricity of the substrate, the amount of the substrate The amount of surface vibration, the position of the liquid receiving part, the moving speed of the liquid receiving part, the acceleration of the liquid receiving part, the time when the position of the liquid receiving part is changed, the time when the moving speed of the liquid receiving part is changed, the fan The wind speed of the air delivered by the filter unit into the processing chamber, the air volume of the air delivered by the fan filter unit into the processing chamber, the wind speed of the gas exhausted from the processing chamber, and the gas exhausted from the processing chamber At least one of the air volume.

In one embodiment, the substrate processing apparatus includes a processing chamber, a first nozzle, a first supply flow path, a circulation flow path, a second supply flow path, a heating part, a liquid receiving part, a second nozzle, and a third supply flow. Road, fan filter unit, exhaust fan, exhaust pipe, and valve. The processing chamber accommodates the substrate. The first nozzle discharges a processing liquid for etching the substrate toward the substrate. The first supply flow path supplies the processing liquid to the first nozzle. The circulation flow path is connected to the first supply flow path to circulate the processing liquid. The second supply flow path supplies the treatment liquid to the circulation flow path. The heating unit heats the substrate. The liquid receiving portion receives the processing liquid scattered from the substrate. The second nozzle ejects gas toward the substrate. The third supply flow path supplies the gas to the second nozzle. The fan filter unit sends air into the processing chamber. The exhaust fan exhausts gas from the processing chamber. In the exhaust pipe, the exhausted gas flows from the processing chamber. The valve is provided in the exhaust pipe.

In one embodiment, the setting conditions of the substrate processing apparatus include the temperature of the processing liquid in the circulation flow path, the temperature of the processing liquid in the first supply flow path, and the temperature of the processing liquid in the third supply flow path. The temperature of the gas, the concentration of the treatment liquid in the circulation flow path, the concentration of the treatment liquid in the first supply flow path, the pressure of the second supply flow path, the pressure of the third supply flow path, the circulation The pressure of the flow path, the flow rate of the treatment liquid flowing through the circulation flow path, the flow rate of the treatment liquid discharged from the first nozzle, the flow rate of the gas discharged from the second nozzle, and the flow rate of the treatment liquid from the first nozzle The time when the signal to start the discharge of the treatment liquid is generated, the time when the signal to start the discharge of the gas from the second nozzle is generated, and the time when the signal to stop the discharge of the treatment liquid from the first nozzle is generated, The timing of the generation of the signal to stop the ejection of the gas from the second nozzle, the timing of the generation of the signal to change the flow rate of the processing liquid from the first nozzle, the signal to change the flow rate of the gas from the second nozzle The time of generation, the rising characteristics of the flow rate of the processing liquid discharged from the first nozzle, the rising characteristics of the flow rate of the gas discharged from the second nozzle, and the decreasing characteristics of the flow rate of the processing liquid discharged from the first nozzle , The characteristics of the decrease in the flow rate of the gas discharged from the second nozzle, the speed at which the processing liquid is sucked from the first nozzle toward the upstream side of the first supply flow path after the discharge of the processing liquid is stopped, and the sucked The position where the processing liquid stops, the rotation speed of the substrate, the acceleration of the substrate, the time when the rotation speed of the substrate is changed, the position of the first nozzle, the moving speed of the first nozzle, the acceleration of the first nozzle, and the The time when the position of the first nozzle is changed, the time when the moving speed of the first nozzle is changed, the temperature at which the substrate is heated, the position of the liquid receiving portion, the moving speed of the liquid receiving portion, the acceleration of the liquid receiving portion, the receiving The time when the position of the liquid part is changed, the time when the moving speed of the above-mentioned liquid-receiving part is changed, the differential pressure of the fan filter unit, the differential pressure of the valve, the wind speed of the gas exhausted from the processing chamber, and the processing chamber At least one of the air volume of the gas to be exhausted and the light volume in the above-mentioned processing chamber.

The substrate processing apparatus of the present invention etches the substrate. The above-mentioned substrate processing apparatus includes a control unit. The control unit generates and performs at least one setting condition among the setting conditions of the substrate processing apparatus based on at least one execution condition among the execution conditions during the execution of the etching and at least one feature quantity representing the execution result of the etching. The revised and corrected data. The control unit corrects the at least one setting condition based on the correction data.

The substrate processing system of this embodiment includes a substrate processing device and a correction data generating device. The substrate processing apparatus described above etches the substrate. The correction data generating device outputs correction data for correcting the setting conditions of the substrate processing device. The above-mentioned correction data generating device includes a control unit. The control unit generates and performs at least one setting condition among the setting conditions of the substrate processing apparatus based on at least one execution condition among the execution conditions during the execution of the etching and at least one feature quantity representing the execution result of the etching. The revised and corrected data. The substrate processing apparatus corrects the at least one setting condition based on the correction data.

According to the present invention, the burden on the operator can be reduced.

2‧‧‧Processing room

3‧‧‧Rotating Chuck

5‧‧‧Heating section

6‧‧‧Eluent supply part

8‧‧‧Liquid Department

8a‧‧‧upper end

10‧‧‧Control Department

11‧‧‧Processor

12‧‧‧Memory Department

13‧‧‧Input part

14‧‧‧Communication interface

21‧‧‧The next wall

22‧‧‧FFU

23‧‧‧Exhaust

31‧‧‧Rotating base

32‧‧‧Chuck pin

33‧‧‧Rotation axis

34‧‧‧Rotating Motor

35‧‧‧Motor encoder

40‧‧‧Processing liquid supply part

41‧‧‧Processing liquid nozzle

42‧‧‧Processing liquid supply piping

43‧‧‧Nozzle arm

44‧‧‧Nozzle moving part

51‧‧‧Infrared heater

51a‧‧‧Infrared light

52‧‧‧Heater arm

53‧‧‧Moving part of heater

61‧‧‧Eluent nozzle

62‧‧‧Eluent supply piping

63‧‧‧Eluent valve

70‧‧‧Gas Supply Department

71‧‧‧Gas nozzle

72‧‧‧Gas supply piping

81‧‧‧Liquid receiver moving part

100‧‧‧Substrate processing equipment

101‧‧‧Thermal Image Camera

102‧‧‧Video camera

103‧‧‧Dimming light

104‧‧‧Surface temperature sensor

105‧‧‧Surface Potential Sensor

106‧‧‧The first differential pressure gauge

107‧‧‧Air Supply Anemometer

108‧‧‧Air supply air flow meter

109‧‧‧The second differential pressure gauge

110‧‧‧Exhaust Anemometer

111‧‧‧Exhaust air flow meter

112‧‧‧Light Sensor

113‧‧‧Environmental Gas Concentration Sensor

114‧‧‧Humidity Sensor

115‧‧‧Oxygen concentration sensor

116‧‧‧Ammonia concentration sensor

117‧‧‧VOC concentration sensor

130‧‧‧Learning completed model

131‧‧‧Input layer

132‧‧‧Middle layer

133‧‧‧Output layer

200‧‧‧Inspection device

201‧‧‧Communication interface

231‧‧‧Exhaust Fan

232‧‧‧Exhaust pipe

233‧‧‧valve

300‧‧‧Processing liquid circulation part

301‧‧‧harmonizer

302‧‧‧Circulation piping

303‧‧‧Heating heater

304‧‧‧Pump

305‧‧‧valve

306‧‧‧Relief valve

307‧‧‧Overflow piping

308‧‧‧Temperature sensor

309‧‧‧Concentration Sensor

310‧‧‧Pressure Sensor

311‧‧‧Flowmeter

421‧‧‧Temperature sensor

422‧‧‧Concentration Sensor

423‧‧‧valve

424‧‧‧Mixing valve

425‧‧‧Flowmeter

426‧‧‧Heating heater

427‧‧‧Suction valve

441‧‧‧Motor

442‧‧‧Motor encoder

510‧‧‧The first processing liquid component supply part

511‧‧‧Piping

512‧‧‧Regulator

513‧‧‧Pressure Sensor

514‧‧‧Quantitative discharge pump

520‧‧‧Second treatment liquid component supply part

521‧‧‧Piping

522‧‧‧Regulator

523‧‧‧Pressure sensor

600‧‧‧Treatment liquid recovery department

601‧‧‧Recycling slot

602‧‧‧First recovery piping

603‧‧‧Second recovery piping

604‧‧‧Pump

721‧‧‧Regulator

722‧‧‧Temperature sensor

723‧‧‧Pressure Sensor

724‧‧‧Concentration Sensor

725‧‧‧valve

726‧‧‧Flowmeter

727‧‧‧Heating heater

811‧‧‧Liquid receiver motor

812‧‧‧Motor encoder

1000‧‧‧Substrate Processing System

1100‧‧‧Correction data generation device

1101‧‧‧Communication interface

1110‧‧‧Control Department

1111‧‧‧Processor

1112‧‧‧Memory Department

AX1‧‧‧Rotation axis

AX2‧‧‧Rotation axis

AX3‧‧‧Rotation axis

Dr‧‧‧Rotation Direction

L‧‧‧Treatment fluid

L1‧‧‧The first treatment liquid composition

L2‧‧‧The second treatment liquid composition

W‧‧‧Substrate

Wa‧‧‧Processed substrate

Wb‧‧‧Unprocessed substrate

Fig. 1 is a schematic diagram of a substrate processing apparatus in Embodiment 1 of the present invention.

Fig. 2 is a flowchart showing the substrate processing method in the first embodiment of the present invention.

Fig. 3 is a block diagram of the substrate processing apparatus in the first embodiment of the present invention.

FIG. 4 is a diagram showing an example of the change in the position of the processing liquid nozzle and the change in the moving speed during the etching process.

Fig. 5 is a block diagram of the substrate processing apparatus in the first embodiment of the present invention.

Fig. 6 is a schematic diagram of a processing liquid supply unit in Embodiment 1 of the present invention.

Fig. 7 is a schematic diagram of the gas supply unit in the first embodiment of the present invention.

Fig. 8 is a schematic diagram showing a processing liquid circulation part, a first processing liquid component supply part, a second processing liquid component supply part, and a processing liquid recovery part in Embodiment 1 of the present invention.

Fig. 9 is a block diagram of the substrate processing apparatus in the first embodiment of the present invention.

Fig. 10 is a schematic diagram of a substrate processing system in Embodiment 1 of the present invention.

Fig. 11 is a diagram showing an example of the etching amount at each radius position of the processed substrate.

Fig. 12 is a block diagram of the substrate processing apparatus in the first embodiment of the present invention.

Fig. 13 is a flowchart showing the correction method in the first embodiment of the present invention.

Fig. 14 is a schematic diagram of the learned model in Embodiment 1 of the present invention.

Fig. 15 is a flowchart showing the learning method in the first embodiment of the present invention.

Fig. 16 is a schematic diagram of a substrate processing system in Embodiment 2 of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following embodiments. In addition, there may be cases where the description is appropriately omitted for the overlapping descriptions. In addition, in the figure, the same reference signs are attached to the same or corresponding parts, and the description will not be repeated.

[Embodiment 1]

1, the substrate processing apparatus 100 of this embodiment will be described. FIG. 1 is a schematic diagram of a substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 supplies the processing liquid L to the substrate W and etches the substrate W with the processing liquid L. The substrate processing apparatus 100 of this embodiment is a one-piece type apparatus that etches the substrate W piece by piece. In addition, in this embodiment, the substrate W is a semiconductor wafer. The substrate W has a substantially disc shape.

As shown in FIG. 1, the substrate processing apparatus 100 includes a box-shaped partition wall 21, a fan filter unit (FFU) 22, and an exhaust unit 23. The partition wall 21 partitions the processing chamber 2 (chamber) in which the substrate W is accommodated.

The FFU 22 transports clean air to the processing chamber 2 from the upper part of the partition wall 21. Specifically, FFU22 has an air supply fan and a filter. The FFU22 transports the air filtered by the filter to the processing chamber 2.

The exhaust part 23 is arranged in the lower part of the processing chamber 2. The exhaust part 23 exhausts the gas in the processing chamber 2. The FFU 22 and the exhaust part 23 form a downward flow (downward flow) flowing from the top to the bottom in the processing chamber 2. The etching of the substrate W is performed in a state where a downflow is formed in the processing chamber 2.

The exhaust unit 23 includes an exhaust fan 231, an exhaust pipe 232, and a valve 233. The exhaust fan 231 is arranged in the exhaust pipe 232. The exhaust fan 231 exhausts the gas from the processing chamber 2. Specifically, driven by the exhaust fan 231, the gas in the processing chamber 2 flows into the exhaust pipe 232. As a result, the gas exhausted from the processing chamber 2 flows through the exhaust pipe 232.

The exhaust pipe 232 guides the gas to an exhaust facility installed in a factory where the substrate processing apparatus 100 is installed. Therefore, driven by the exhaust fan 231, the gas in the processing chamber 2 is guided to the exhaust equipment through the exhaust pipe 232.

The valve 233 is provided in the exhaust pipe 232. In detail, the valve 233 is arranged on the downstream side of the exhaust fan 231 with respect to the direction in which the gas flows through the exhaust pipe 232. The valve 233 controls the pressure (exhaust pressure) of the gas flow path (exhaust flow path) formed by the exhaust pipe 232. The valve 233 is, for example, an automatic valve.

As shown in FIG. 1, the substrate processing apparatus 100 further includes a rotating chuck 3. The rotating chuck 3 holds the substrate W horizontally. In addition, the spin chuck 3 rotates the substrate W around the rotation axis AX1 extending in the vertical direction while holding the substrate W. Specifically, the rotating chuck 3 includes a rotating base 31, a plurality of chuck pins 32, a rotating shaft 33, a rotating motor 34, and a motor encoder 35.

The rotating base 31 of this embodiment is a circular plate shape. The rotating base 31 is held in a horizontal posture. Each of the plurality of chuck pins 32 holds the substrate W in a horizontal posture above the rotating base 31. The rotating shaft 33 extends downward from the central part of the rotating base 31. The rotation motor 34 rotates the rotation shaft 33 in the rotation direction Dr, thereby rotating the substrate W and the rotation base 31 about the rotation axis AX1. The motor encoder 35 generates a signal indicating the rotation speed of the rotary motor 34. In other words, the motor encoder 35 generates a signal indicating the rotation speed of the substrate W.

As shown in FIG. 1, the substrate processing apparatus 100 further includes a processing liquid nozzle 41, a processing liquid supply pipe 42, a nozzle arm 43, and a nozzle moving unit 44.

The processing liquid nozzle 41 discharges the processing liquid L toward the substrate W held by the spin chuck 3. By supplying the processing liquid L to the substrate W, the substrate W is etched. The treatment liquid L is, for example, an aqueous solution containing phosphoric acid (etching component) as a main component, an aqueous solution containing hydrofluoric acid (etching component) as a main component, an aqueous solution containing nitric acid (etching component) as a main component, and a combination of hydrofluoric acid (etching component) and hydrofluoric acid (etching component). Either an aqueous solution in which nitric acid (etching component) is mixed, an aqueous solution containing ammonium hydroxide (etching component) as a main component, and an aqueous solution in which ammonium hydroxide (etching component) and hydrogen peroxide water (etching component) are mixed.

The processing liquid supply pipe 42 supplies the processing liquid L to the processing liquid nozzle 41. The processing liquid supply pipe 42 forms a processing liquid supply flow path through which the processing liquid L flows toward the processing liquid nozzle 41.

The nozzle arm 43 supports the processing liquid nozzle 41. Specifically, the processing liquid nozzle 41 is attached to the front end of the nozzle arm 43. The nozzle moving part 44 causes the nozzle arm 43 to rotate around the rotating chuck 3 with the rotation axis AX2 extending in the vertical direction as the center. As a result, the processing liquid nozzle 41 rotates around the rotation axis AX2. The processing liquid nozzle 41 rotates around the rotation axis AX2 and discharges the processing liquid L toward the substrate W. In other words, the processing liquid nozzle 41 is a scanning nozzle.

As shown in FIG. 1, the substrate processing apparatus 100 further includes a heating unit 5. The heating unit 5 heats the substrate W. Specifically, the heating unit 5 includes an infrared heater 51, a heater arm 52, and a heater moving unit 53.

The infrared heater 51 irradiates the substrate W with infrared rays. In more detail, the infrared heater 51 has an infrared lamp 51a. The infrared lamp 51a generates infrared rays.

The heater arm 52 supports the infrared heater 51. Specifically, the infrared heater 51 is attached to the front end of the heater arm 52. The heater moving part 53 rotates the heater arm 52 around the rotating chuck 3 with the rotation axis AX3 extending in the vertical direction as the center. As a result, the infrared heater 51 rotates around the rotation axis AX3. The infrared heater 51 heats the substrate W while rotating around the rotation axis AX3.

As shown in FIG. 1, the substrate processing apparatus 100 further includes a rinsing liquid supply unit 6. The rinsing liquid supply unit 6 supplies the rinsing liquid to the substrate W. The rinsing process is performed on the substrate W by supplying the rinsing liquid to the substrate W. The eluent is, for example, pure water (Deionzied Water). Furthermore, the eluent is not limited to pure water, but can also be carbonated water, electrolyzed ionized water, hydrogen water, ozone water, IPA (isopropanol), and hydrochloric acid water with a dilution concentration (for example, about 10 to 100 ppm). Either.

Specifically, the rinsing liquid supply unit 6 includes a rinsing liquid nozzle 61, a rinsing liquid supply pipe 62, and a rinsing liquid valve 63. The rinse liquid nozzle 61 discharges the rinse liquid toward the substrate W held by the spin chuck 3. The rinsing liquid supply pipe 62 supplies the rinsing liquid to the rinsing liquid nozzle 61. The eluent nozzle 61 of this embodiment is a fixed nozzle that discharges the eluent in a state where the discharge port of the eluent nozzle 61 is stationary. Furthermore, the rinse liquid nozzle 61 may also be a scanning nozzle.

The eluent valve 63 switches the supply of eluent to the eluent nozzle 61 and stops the supply. In detail, when the rinsing liquid valve 63 is opened, the rinsing liquid is discharged toward the substrate W from the rinsing liquid nozzle 61. On the other hand, if the eluent valve 63 is closed, the discharge of the eluent is stopped. The eluent valve 63 is, for example, an electric valve.

As shown in FIG. 1, the substrate processing apparatus 100 further includes a gas nozzle 71, a gas supply pipe 72, and a liquid receiver 8.

The gas nozzle 71 ejects the gas G toward the substrate W. Gas G is an inert gas containing inert components like nitrogen. In detail, the gas nozzle 71 ejects the gas G toward the substrate W when drying the substrate W.

The gas supply pipe 72 supplies the gas G to the gas nozzle 71. The gas supply pipe 72 forms a gas supply flow path through which the gas G flows toward the gas nozzle 71.

The liquid receiving portion 8 is arranged on the outside of the substrate W held by the spin chuck 3. The liquid receiving portion 8 has a substantially cylindrical shape. The liquid receiving part 8 can move in a vertical direction. The liquid receiving portion 8 receives the processing liquid L scattered from the substrate W. In detail, when the substrate W is rotated by the spin chuck 3, when the processing liquid L is supplied to the substrate W, the processing liquid L supplied to the substrate W is thrown around the substrate W. As a result, the processing liquid L is scattered around the substrate W, and the processing liquid L scattered from the substrate W is received by the liquid receiving portion 8. The processing liquid L received by the liquid receiving unit 8 is sent to the processing liquid recovery unit 600 described with reference to FIG. 8. In addition, the liquid receiving portion 8 also receives the rinsing liquid scattered from the substrate W in the same manner as the processing liquid L. As shown in FIG.

Here, referring to FIGS. 1 and 2, the substrate processing method executed by the substrate processing apparatus 100 of this embodiment will be described. Fig. 2 is a flowchart showing the substrate processing method of this embodiment. As shown in FIG. 2, the substrate processing method of this embodiment includes steps S1 to S5.

When the substrate processing apparatus 100 processes the substrate W, first, the substrate W is carried into the processing chamber 2 (step S1). Specifically, the transport robot transports the substrate W into the processing chamber 2. The loaded substrate W is held by the rotating chuck 3. Furthermore, when the substrate W is carried into the processing chamber 2, the liquid receiving portion 8 is located at the retracted position. When the liquid receiving portion 8 is in the retracted position, the upper end portion 8a (FIG. 1) of the liquid receiving portion 8 is located below the rotating base 31. When the spin chuck 3 holds the substrate W, the liquid receiving portion 8 moves upward to a liquid receiving position that can receive the processing liquid L and the rinse liquid scattered from the substrate W. When the liquid receiving portion 8 is located at the liquid receiving position, the upper end 8a of the liquid receiving portion 8 is located higher than the rotating base 31.

After the spin chuck 3 holds the substrate W, the substrate W is etched with the processing liquid L (step S2). Specifically, before supplying the processing liquid L to the substrate W, the rotating chuck 3 rotates the substrate W. After the rotation speed of the substrate W reaches a predetermined rotation speed, the supply of the processing liquid L is started.

In detail, the processing liquid nozzle 41 discharges the processing liquid L while rotating around the rotation axis AX2. The processing liquid nozzle 41 discharges the processing liquid L until at least the entire area of the upper surface of the substrate W is covered by the processing liquid L. Furthermore, in this embodiment, after the discharge of the processing liquid L is stopped, the processing liquid L is sucked in from the processing liquid nozzle 41 toward the upstream side of the processing liquid supply pipe 42 (back sucking).

When the discharge of the processing liquid L by the processing liquid nozzle 41 is stopped, the heating unit 5 heats the substrate W and the processing liquid L. Specifically, the infrared heater 51 heats the substrate W and the processing liquid L while rotating around the rotation axis AX3.

After the substrate W and the processing liquid L are heated, the rinse liquid is supplied to the substrate W (step S3). By supplying the rinse liquid to the substrate W, the processing liquid L on the surface of the substrate W is removed. Specifically, the processing liquid L is rinsed to the outside of the substrate W by the rinsing liquid, and is discharged to the periphery of the substrate W. As a result, the liquid film of the processing liquid L on the substrate W is replaced with the liquid film of the eluent covering the entire area of the upper surface of the substrate W.

After replacing the processing liquid L on the surface of the substrate W with a rinse liquid, the substrate W is dried (step S4). Specifically, the rotation speed of the substrate W is increased more than the rotation speed during the etching process and the rinse process. As a result, a large centrifugal force is applied to the rinsing liquid on the substrate W, and the rinsing liquid adhering to the substrate W is thrown around the substrate W. In this way, the rinse liquid is removed from the substrate W, and the substrate W is dried. In addition, when the substrate W is dried, the gas G is ejected from the gas nozzle 71 toward the substrate W. As a result, a flow of inert gas toward the surface of the substrate W is formed, and the drying of the substrate W is promoted. In addition, by promoting the drying of the substrate W, the occurrence of water streaks can be suppressed. The spin chuck 3 stops the rotation of the substrate W after a predetermined time has elapsed since the start of the high-speed rotation of the substrate W, for example.

After the rotation of the substrate W is stopped, the substrate W is carried out from the processing chamber 2 (step S5), and the processing shown in FIG. 2 is ended. Specifically, after the rotation of the substrate W is stopped, the liquid receiving portion 8 moves from the liquid receiving position to the retracted position. Furthermore, the holding of the substrate W by the spin chuck 3 is released. When the liquid receiving portion 8 moves to the retreat position and the holding of the substrate W by the spin chuck 3 is released, the transfer robot unloads the substrate W from the processing chamber 2. As a result, the processing of one substrate W by the substrate processing apparatus 100 is completed.

Next, referring to FIG. 1 again, the substrate processing apparatus 100 of this embodiment will be described. As shown in FIG. 1, the substrate processing apparatus 100 further includes a thermal imaging camera 101, a video camera 102, and a dimming lamp 103.

The thermal imaging camera 101 detects the temperature distribution in the processing chamber 2. The temperature distribution in the processing chamber 2 indicates the temperature of the processing liquid L at the front end of the processing liquid nozzle 41, the temperature of the gas G at the front end of the gas nozzle 71, the temperature of the surface of the substrate W, the temperature of the partition wall 21, and the liquid receiving portion 8. , The temperature of the nozzle arm 43, and the temperature of the rotating base 31, etc.

The video camera 102 photographs the inside of the processing room 2. Specifically, the video camera 102 images the processing liquid nozzle 41, the processing liquid supply pipe 42, the nozzle arm 43, the chuck pin 32, the liquid receiving portion 8, the substrate W, and the like. The dimming lamp 103 generates light that irradiates the processing chamber 2.

Next, referring to FIGS. 1 and 3, the substrate processing apparatus 100 of this embodiment will be described. FIG. 3 is a block diagram of the substrate processing apparatus 100. As shown in FIG. 3, the substrate processing apparatus 100 further includes a receiver moving unit 81 and a control unit 10.

The control unit 10 includes a processor 11 and a storage unit 12. The processor 11 is, for example, a central processing unit (CPU). Alternatively, the processor 11 is a general-purpose arithmetic unit. The storage unit 12 stores data and computer programs. The storage unit 12 includes a main storage device and an auxiliary storage device. The main memory device is constituted by, for example, a semiconductor memory. The auxiliary memory device is composed of, for example, a semiconductor memory and/or a hard disk drive. The storage unit 12 may also include removable media.

The processor 11 executes the computer program memorized in the memory unit 12 to control the FFU 22, the exhaust unit 23, the rotating chuck 3, the nozzle moving unit 44, the heating unit 5, the eluent supply unit 6, the receiver moving unit 81, and the adjustment Light 103, thermal imaging camera 101, and video camera 102.

Specifically, the processor 11 controls the air supply fan included in the FFU 22. The processor 11 can control the air supply fan to adjust the differential pressure of the FFU 22. The differential pressure of the FFU 22 is the setting condition of the substrate processing apparatus 100.

The processor 11 controls the exhaust fan 231 and the valve 233 included in the exhaust unit 23. The processor 11 can control the exhaust fan 231 to adjust the wind speed (exhaust wind speed) of the gas flowing through the exhaust pipe 232 and the wind volume (exhaust air volume) of the gas flowing through the exhaust pipe 232. In addition, the processor 11 can control the valve 233 to adjust the exhaust pressure. The exhaust air speed, exhaust air volume, and exhaust pressure are set conditions of the substrate processing apparatus 100.

The processor 11 controls the chuck pin 32 and the rotation motor 34 included in the rotating chuck 3. The processor 11 can control the rotation motor 34 to adjust the rotation speed of the substrate W, the rotation acceleration of the substrate W, and the timing of change of the rotation speed of the substrate W. The rotation speed of the substrate W and the like are set conditions of the substrate processing apparatus 100.

The processor 11 receives a signal from the motor encoder 35 included in the rotating chuck 3. As explained with reference to FIG. 1, the motor encoder 35 outputs a signal indicating the rotation speed of the substrate W. The processor 11 detects the change timing of the rotation speed of the substrate W, the rotation acceleration of the substrate W, and the rotation acceleration of the substrate W based on the signal received from the motor encoder 35. The detected rotation speed of the substrate W and the like are the execution conditions when the etching is executed. The processor 11 stores information indicating the detected rotation speed of the substrate W and the like in the storage unit 12.

The nozzle moving unit 44 includes a motor 441 and a motor encoder 442. Hereinafter, the motor 441 is referred to as "nozzle motor 441". Driven by the nozzle motor 441, the processing liquid nozzle 41 rotates around the rotation axis A2. The motor encoder 442 generates a signal indicating the rotation speed and rotation position of the nozzle motor 441. In other words, the motor encoder 442 generates a signal indicating the moving speed of the processing liquid nozzle 41 and the position in the radial direction.

The processor 11 controls the nozzle motor 441. The processor 11 can control the nozzle motor 441 to adjust the position of the processing liquid nozzle 41 in the radial direction, the moving speed of the processing liquid nozzle 41, the acceleration of the processing liquid nozzle 41, the time when the position of the processing liquid nozzle 41 is changed, and the processing liquid nozzle 41 The time of change of the movement speed. The position of the processing liquid nozzle 41 in the radial direction and the like are set conditions of the substrate processing apparatus 100.

The processor 11 receives signals indicating the rotation speed and rotation position of the nozzle motor 441 from the motor encoder 442. Based on the signal received from the motor encoder 442, the processor 11 detects the position of the processing liquid nozzle 41 in the radial direction, the moving speed of the processing liquid nozzle 41, the acceleration of the processing liquid nozzle 41, and the time when the position of the processing liquid nozzle 41 is changed. , And the time when the moving speed of the processing liquid nozzle 41 is changed. The position of the detected processing liquid nozzle 41 in the radial direction and the like are the execution conditions when etching is executed. The processor 11 stores information indicating the position of the detected processing liquid nozzle 41 in the radial direction and the like in the storage unit 12.

The processor 11 controls the eluent valve 63 included in the eluent supply unit 6. In addition, the processor 11 controls the infrared lamp 51 a and the heater moving unit 53 included in the heating unit 5. The processor 11 can control the infrared lamp 51a to adjust the temperature of heating the substrate W (substrate heating temperature). The substrate heating temperature is a setting condition of the substrate processing apparatus 100.

The liquid receiver moving part 81 moves the liquid receiver 8 in the vertical direction. The receiver moving unit 81 includes a motor 811 and a motor encoder 812. Hereinafter, the motor 811 will be referred to as "the receiver motor 811". Driven by the liquid receiver motor 811, the liquid receiver 8 moves in the vertical direction. The motor encoder 812 generates signals indicating the rotation speed and rotation position of the liquid receiver motor 811. In other words, the motor encoder 812 generates a signal indicating the moving speed of the liquid receiving portion 8 and the position in the vertical direction.

The processor 11 controls the liquid receiver motor 811. The processor 11 can control the liquid receiver motor 811 to adjust the vertical position of the liquid receiving portion 8, the moving speed of the liquid receiving portion 8, the acceleration of the liquid receiving portion 8, the time point of changing the position of the liquid receiving portion 8, and the liquid receiving portion 8. The time when the moving speed of part 8 is changed. The position of the liquid receiving portion 8 in the vertical direction and the like are set conditions of the substrate processing apparatus 100.

The processor 11 receives a signal representing the rotation speed and rotation position of the liquid receiver motor 811 from the motor encoder 812. Based on the signal received from the motor encoder 812, the processor 11 detects the vertical position of the liquid receiving portion 8, the moving speed of the liquid receiving portion 8, the acceleration of the liquid receiving portion 8, and the time of change of the position of the liquid receiving portion 8. , And the time when the moving speed of the liquid-receiving part 8 is changed. The detected position of the liquid receiving portion 8 in the vertical direction and the like are the execution conditions when the etching is executed. The processor 11 stores information indicating the detected position of the liquid receiving portion 8 in the vertical direction and the like in the memory portion 12.

The processor 11 can control the dimming lamp 103 to adjust the amount of light in the processing chamber 2. The amount of light in the processing chamber 2 is a setting condition of the substrate processing apparatus 100.

The processor 11 receives an image signal representing the temperature distribution in the processing chamber 2 from the thermal imaging camera 101. The processor 11 detects the temperature of the processing liquid L at the front end of the processing liquid nozzle 41, the temperature of the gas G at the front end of the gas nozzle 71, the temperature of the surface of the substrate W, and the partition wall based on the image signal received from the thermal imaging camera 101. The temperature of 21, the temperature of the liquid receiving part 8, the temperature of the nozzle arm 43, the temperature of the rotating base 31, and so on. The detected temperature is the execution condition when etching is executed. The processor 11 stores information indicating the detected temperature in the storage unit 12.

The processor 11 receives the video signal from the video camera 102. Hereinafter, the information detected by the processor 11 based on the imaging signal will be described.

The processor 11 detects, based on the imaging signal, the time when the treatment liquid L starts to be discharged from the treatment liquid nozzle 41 (the time when the discharge of the treatment liquid L starts), and the time when the discharge of the treatment liquid L from the treatment liquid nozzle 41 stops (the treatment liquid L When the flow rate of the treatment liquid L from the treatment liquid nozzle 41 is changed (the time when the discharge flow rate of the treatment liquid L is changed), and the rise characteristic of the flow rate of the treatment liquid L from the treatment liquid nozzle 41 (treatment liquid The discharge flow rate increase characteristic of L), the decrease characteristic of the flow rate of the treatment liquid L discharged from the treatment liquid nozzle 41 (the discharge flow rate decrease characteristic of the treatment liquid L), the time point when the gas G starts to be discharged from the gas nozzle 71 (the discharge start of the gas G) Time), the time point when the ejection of the gas G from the gas nozzle 71 stops (the time when the ejection of the gas G is stopped), the time point when the flow rate of the gas G from the gas nozzle 71 is changed (the time when the ejection flow rate of the gas G is changed), and the gas G The increase characteristic of the flow rate ejected from the gas nozzle 71 (the ejection flow rate increase characteristic of the gas G) and the decrease characteristic of the flow rate ejected from the gas nozzle 71 of the gas G (the ejection flow rate decrease characteristic of the gas G). The detected start time of the discharge of the processing liquid L, etc. are the execution conditions when the etching is executed. The processor 11 stores information indicating the detected start time of the discharge of the treatment liquid L in the storage unit 12.

The processor 11 detects the moving speed (return speed) of the processing liquid L sucked from the processing liquid nozzle 41 toward the upstream side of the processing liquid supply pipe 42 and the stop position (returning) of the sucked processing liquid L based on the imaging signal. Suction stop position). The detected suck back speed and suck back stop position are the execution conditions when etching is executed. The processor 11 stores the information indicating the detected suck-back speed and the suck-back stop position in the storage unit 12.

The processor 11 detects whether the processing liquid L is dripping from the front end of the processing liquid nozzle 41 (the presence or absence of dripping) based on the imaging signal. The presence or absence of dripping is the execution condition when etching is executed. The processor 11 stores information indicating the presence or absence of dripping in the storage unit 12.

The processor 11 detects the film thickness distribution of the processing liquid L covering the entire area of the surface of the substrate W based on the imaging signal. The film thickness distribution of the processing liquid L is the execution condition when the etching is executed. The processor 11 stores information indicating the film thickness distribution of the processing liquid L in the storage unit 12.

The processor 11 detects the presence or absence of adhesion of the processing liquid L on the upper surface and the outer surface of the liquid receiving portion 8 based on the imaging signal. The presence or absence of the adhesion of the processing liquid L on the upper surface and the outer side surface of the liquid receiving portion 8 is the execution condition when the etching is executed. The processor 11 stores information indicating the presence or absence of adhesion of the processing liquid L on the upper surface and the outer surface of the liquid receiving portion 8 in the memory portion 12.

The processor 11 detects the amount of the treatment liquid L adhering to the upper surface and the outer surface of the liquid receiving portion 8 based on the imaging signal. The amount of the processing liquid L adhering to the upper surface and the outer side surface of the liquid receiving portion 8 is the execution condition when the etching is executed. The processor 11 stores information indicating the amount of the processing liquid L attached to the upper surface and the outer surface of the liquid receiving portion 8 in the memory portion 12.

The processor 11 detects the position of the processing liquid nozzle 41, the shape of the nozzle arm 43, the shape of the heater arm 52, the position of the eluent nozzle 61, and the position of the gas nozzle 71 based on the imaging signal. Furthermore, the processor 11 detects the position of the processing liquid nozzle 41 from the predetermined position based on the position of the processing liquid nozzle 41 detected based on the imaging signal and the predetermined position of the processing liquid nozzle 41 stored in the memory 12 Offset. In other words, the change in the position of the processing liquid nozzle 41 is detected. Similarly, the processor 11 detects the shape of the nozzle arm 43, the shape of the heater arm 52, the position of the eluent nozzle 61, and the position of the gas nozzle 71, which are detected based on the imaging signal, and are stored in the memory unit 12. The specified shape of the nozzle arm 43, the specified shape of the heater arm 52, the specified position of the eluent nozzle 61, and the specified position of the gas nozzle 71 are detected. The change in the shape of the nozzle arm 43 and the shape of the heater arm 52 are detected. Changes, changes in the position of the rinse liquid nozzle 61, and changes in the position of the gas nozzle 71. The change of the position of the processing liquid nozzle 41 and the like are the execution conditions when the etching is executed. The processor 11 stores information indicating changes in the position of the processing liquid nozzle 41 and the like in the storage unit 12.

The processor 11 detects the position of the liquid receiving portion 8 and the shape of the liquid receiving portion 8 based on the imaging signal. Furthermore, the processor 11 detects the position of the liquid receiving portion 8 from the predetermined position based on the position of the liquid receiving portion 8 detected based on the imaging signal and the predetermined position of the liquid receiving portion 8 stored in the memory portion 12 The offset is the change in the position of the liquid-receiving part 8. Similarly, the processor 11 detects the change in the shape of the liquid receiving portion 8 based on the shape of the liquid receiving portion 8 detected based on the imaging signal and the predetermined shape of the liquid receiving portion 8 stored in the memory portion 12. The change of the position of the liquid-receiving portion 8 and the change of the shape of the liquid-receiving portion 8 are the execution conditions when etching is performed. The processor 11 stores information indicating the change in the position of the liquid receiving portion 8 and the change in the shape of the liquid receiving portion 8 in the memory portion 12.

The processor 11 detects the shape of the chuck pin 32 based on the photographic signal. Furthermore, the processor 11 detects the shape of the chuck pin 32 from the predetermined shape based on the shape of the chuck pin 32 detected based on the photographic signal and the predetermined shape of the chuck pin 32 stored in the memory 12 The amount of change is the change in the shape of the chuck pin 32. The processor 11 then detects the degree of wear of the chuck pin 32 from the change in the shape of the chuck pin 32. The change of the shape of the chuck pin 32 and the degree of wear of the chuck pin 32 are the execution conditions when the etching is performed. The processor 11 stores the information indicating the change in the shape of the chuck pin 32 and the degree of wear of the chuck pin 32 in the memory unit 12.

The processor 11 detects the airflow distribution (airflow distribution) of the gas flowing in the processing chamber 2 based on the photographic signal. Airflow distribution is the execution condition when etching is executed. The processor 11 stores information indicating the airflow distribution in the storage unit 12.

The processor 11 detects the amount of eccentricity of the substrate W and the amount of surface vibration of the substrate W based on the imaging signal. The amount of eccentricity of the substrate W and the amount of surface oscillation of the substrate W are the execution conditions when the etching is executed. The processor 11 stores information indicating the amount of eccentricity of the substrate W and the amount of surface wobble of the substrate W in the storage unit 12.

Above, the substrate processing apparatus 100 has been described with reference to FIGS. 1 and 3. Next, referring to FIG. 4, the movement of the processing liquid nozzle 41 during the etching process will be described. FIG. 4 is a diagram showing an example of the change in the position of the processing liquid nozzle 41 and the change in the moving speed during the etching process. In FIG. 4, the vertical axis represents the moving speed of the processing liquid nozzle 41, and the horizontal axis represents the radius position of the substrate W.

As shown in FIG. 4, during the etching process, the processing liquid nozzle 41 moves from the center of the substrate W to the radius position c. Specifically, the processing liquid nozzle 41 moves from the center of the substrate W to the radius position a while accelerating. The moving speed of the processing liquid nozzle 41 when reaching the radius position a is "Va". After that, the processing liquid nozzle 41 moves from the radial position a to the radial position b while decelerating. The moving speed of the processing liquid nozzle 41 when it reaches the radius position b is "Vb". When the processing liquid nozzle 41 reaches the radius position b, it moves from the radius position b to the radius position c while decelerating, and stops at the radius position c. In this way, the processing liquid nozzle 41 is accelerated and decelerated during the etching process.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 and 5. FIG. 5 is a block diagram of the substrate processing apparatus 100. As shown in FIG. 5, the substrate processing apparatus 100 further includes a surface temperature sensor 104 and a surface potential sensor 105.

The surface temperature sensor 104 detects the temperature at which the infrared heater 51 heats the substrate W. Specifically, the surface temperature sensor 104 detects the surface temperature of the infrared heater 51. The processor 11 receives a signal indicating the temperature at which the infrared heater 51 heats the substrate W (the substrate heating temperature) from the surface temperature sensor 104. The substrate heating temperature is the execution condition when the etching is executed. The processor 11 stores information indicating the heating temperature of the substrate in the storage unit 12.

The surface potential sensor 105 detects the potential of the surface of the substrate W. The processor 11 receives a signal representing the potential of the surface of the substrate W (substrate surface potential) from the surface potential sensor 105. The substrate surface potential is the execution condition when etching is executed. The processor 11 stores information indicating the surface potential of the substrate in the memory unit 12.

As shown in FIG. 5, the substrate processing apparatus 100 further includes a first differential pressure gauge 106, an air supply anemometer 107, and an air supply air flow meter 108.

The first differential pressure gauge 106 detects the differential pressure of the FFU 22. The first differential pressure gauge 106 is, for example, a differential pressure gauge. The processor 11 receives a signal indicating the differential pressure of the FFU 22 from the first differential pressure gauge 106. The differential pressure of FFU22 is the execution condition when etching is executed. The processor 11 stores the information indicating the differential pressure of the FFU 22 in the storage unit 12.

The air supply anemometer 107 detects the air velocity (supply air velocity) of the air delivered by the FFU 22 into the processing chamber 2. The processor 11 receives a signal indicating the air supply wind speed from the air supply anemometer 107. The air supply wind speed is the execution condition when etching is executed. The processor 11 stores information indicating the air supply wind speed in the storage unit 12.

The air supply air volume meter 108 detects the air volume (supply air volume) of the air sent into the processing chamber 2 by the FFU 22. The processor 11 receives a signal indicating the air supply air volume from the air supply air volume meter 108. The air supply air volume is the execution condition when etching is executed. The processor 11 stores information indicating the air supply air volume in the storage unit 12.

As shown in FIG. 5, the substrate processing apparatus 100 further includes a second differential pressure gauge 109, an exhaust air velocity meter 110, and an exhaust air volume meter 111.

The second differential pressure gauge 109 detects the differential pressure of the valve 233. The second differential pressure gauge 109 is, for example, a differential pressure gauge. The processor 11 receives a signal indicating the differential pressure of the valve 233 from the second differential pressure gauge 109. The differential pressure of the valve 233 corresponds to the exhaust pressure. Exhaust pressure is the execution condition when etching is executed. The processor 11 stores information indicating the differential pressure (exhaust pressure) of the valve 233 in the memory unit 12.

The exhaust anemometer 110 detects the wind speed (exhaust wind speed) of the gas exhausted from the processing chamber 2. The processor 11 receives a signal indicating the exhaust wind speed from the exhaust anemometer 110. The exhaust wind speed is the execution condition when etching is executed. The processor 11 stores information indicating the exhaust air velocity in the storage unit 12.

The exhaust air volume meter 111 detects the air volume (exhaust air volume) of the gas exhausted from the processing chamber 2. The processor 11 receives a signal indicating the exhaust air volume from the exhaust air volume meter 111. The exhaust air volume is the execution condition when etching is executed. The processor 11 stores information indicating the amount of exhaust air in the storage unit 12.

As shown in FIG. 5, the substrate processing apparatus 100 further includes a light quantity sensor 112, an ambient gas concentration sensor 113, a humidity sensor 114, an oxygen concentration sensor 115, an ammonia concentration sensor 116, and a VOC concentration sensor.感器117。 Sensor 117.

The light quantity sensor 112 detects the light quantity in the processing chamber 2. The processor 11 receives a signal representing the amount of light in the processing chamber 2 from the light amount sensor 112. The amount of light in the processing chamber 2 is the execution condition when the etching is executed. The processor 11 stores information indicating the amount of light in the processing chamber 2 in the storage unit 12.

The environmental gas concentration sensor 113 detects the concentration of the processing liquid L (processing liquid environmental gas concentration) that has become a gas in the processing chamber 2. The processor 11 receives a signal indicating the concentration of the processing liquid's ambient gas from the ambient gas concentration sensor 113. The concentration of the processing liquid ambient gas is the execution condition when the etching is executed. The processor 11 stores information indicating the gas concentration of the processing liquid in the storage unit 12.

The humidity sensor 114 detects the humidity in the processing chamber 2. The processor 11 receives a signal representing the humidity in the processing chamber 2 from the humidity sensor 114. The humidity in the processing chamber 2 is the execution condition when the etching is executed. The processor 11 stores information indicating the humidity in the processing chamber 2 in the memory unit 12.

The oxygen concentration sensor 115 detects the oxygen concentration in the processing chamber 2. The processor 11 receives a signal indicating the oxygen concentration in the processing chamber 2 from the oxygen concentration sensor 115. The oxygen concentration in the processing chamber 2 is the execution condition when the etching is executed. The processor 11 stores information indicating the oxygen concentration in the processing chamber 2 in the memory unit 12.

The ammonia concentration sensor 116 detects the ammonia concentration in the processing chamber 2. The processor 11 receives a signal representing the ammonia concentration in the processing chamber 2 from the ammonia concentration sensor 116. The ammonia concentration in the processing chamber 2 is the execution condition when the etching is executed. The processor 11 stores information indicating the ammonia concentration in the processing chamber 2 in the memory unit 12.

The VOC concentration sensor 117 detects the concentration (VOC concentration) of volatile organic compounds (VOC) in the processing chamber 2. The processor 11 receives a signal indicating the VOC concentration in the processing chamber 2 from the VOC concentration sensor 117. The VOC concentration in the processing chamber 2 is the execution condition when the etching is executed. The processor 11 stores information indicating the concentration of VOC in the processing chamber 2 in the storage unit 12.

Next, the processing liquid supply unit 40 of this embodiment will be described with reference to FIG. 6. FIG. 6 is a schematic diagram of the processing liquid supply unit 40 of this embodiment. As shown in FIG. 6, the substrate processing apparatus 100 includes a processing liquid supply unit 40. The processing liquid supply unit 40 supplies the processing liquid L to the processing liquid nozzle 41. In addition to the processing liquid supply piping 42 described with reference to FIG. 1, the processing liquid supply unit 40 further includes a temperature sensor 421, a concentration sensor 422, a valve 423, a mixing valve 424, a flow meter 425, a heating heater 426, And the suction valve 427.

The temperature sensor 421 detects the temperature of the processing liquid L flowing through the processing liquid supply pipe 42. The concentration sensor 422 detects the concentration of the etching component contained in the processing liquid L flowing through the processing liquid supply pipe 42. Hereinafter, there is a case where the concentration of the etching component contained in the processing liquid L flowing through the processing liquid supply pipe 42 is described as the "first processing liquid concentration".

The valve 423 is arranged in the processing liquid supply pipe 42. The valve 423 switches the supply of the processing liquid L to the processing liquid nozzle 41 and the stop of the supply. In addition, the valve 423 controls the flow rate of the processing liquid L flowing downstream of the valve 423 in the processing liquid supply pipe 42. Furthermore, the valve 423 controls the discharge flow rate of the processing liquid L discharged from the processing liquid nozzle 41. In addition, the valve 423 controls the rising characteristic and the falling characteristic of the discharge flow rate of the treatment liquid L. In detail, when the valve 423 is opened, the processing liquid L is discharged from the processing liquid nozzle 41 toward the substrate W. On the other hand, when the valve 423 is closed, the discharge of the treatment liquid L is stopped. In addition, in accordance with the opening degree of the valve 423, the flow rate of the processing liquid L flowing downstream of the valve 423 is adjusted. Therefore, in accordance with the opening degree of the valve 423, the discharge flow rate of the treatment liquid L is adjusted. In addition, in accordance with the speed of opening the valve 423, the rising characteristic of the discharge flow rate of the processing liquid L is adjusted, and the speed of closing the valve 423 is adjusted to adjust the falling characteristic of the discharge flow rate of the processing liquid L. The valve 423 is, for example, an electric valve.

The mixing valve 424 is arranged in the processing liquid supply pipe 42. When the mixing valve 424 is opened, pure water flows into the processing liquid supply pipe 42 to dilute the concentration of the first processing liquid.

The flow meter 425 detects the flow rate of the processing liquid L flowing through the processing liquid supply pipe 42. In other words, the discharge flow rate of the treatment liquid L is detected. The heating heater 426 heats the processing liquid L flowing through the processing liquid supply pipe 42.

The suction valve 427 is arranged in the processing liquid supply pipe 42. The suction valve 427 is provided on the downstream side of the valve 423 and changes the volume of the processing liquid supply flow path. More specifically, the suction valve 427 has a diaphragm, and the volume of the processing liquid supply flow path is changed by deforming the diaphragm by inflow of pressurized air. If the volume of the processing liquid supply flow path increases due to the inflow of pressurized air, the pressure of the flow path of the processing liquid nozzle 41 and the pressure of the processing liquid supply flow path decrease instantaneously. The processing liquid L near the opening of the nozzle 41 acts on suction. In this embodiment, after the discharge of the treatment liquid L is stopped, the control unit 10 (processor 11) described with reference to FIGS. 3 and 5 controls the suction valve 427 so that pressurized air flows into the suction valve 427. As a result, the processing liquid L is sucked in from the processing liquid nozzle 41 toward the upstream side of the processing liquid supply pipe 42.

Next, the gas supply unit 70 will be described with reference to FIG. 7. FIG. 7 is a schematic diagram of the gas supply unit 70. As shown in FIG. 7, the substrate processing apparatus 100 includes a gas supply unit 70. The gas supply unit 70 includes a regulator 721, a temperature sensor 722, a pressure sensor 723, a concentration sensor 724, a valve 725, a flow meter 726, and heating in addition to the gas supply piping 72 described with reference to FIG. Heater 727.

The regulator 721 is arranged in the gas supply pipe 72. The regulator 721 adjusts the pressure of the gas supply flow path. The regulator 721 is, for example, an electropneumatic regulator.

The temperature sensor 722 detects the temperature of the gas G flowing through the gas supply pipe 72. The pressure sensor 723 detects the pressure of the gas supply flow path. The concentration sensor 724 detects the concentration of inert components contained in the gas G. Hereinafter, the temperature of the gas G flowing through the gas supply pipe 72 may be described as the “temperature of the gas G”. In addition, there is a case where the concentration of the inert component contained in the gas G is described as the "concentration of the gas G".

The valve 725 is arranged in the gas supply pipe 72. The valve 725 controls the ejection flow rate of the gas G ejected from the gas nozzle 71. In addition, the valve 725 controls the rising and falling characteristics of the discharge flow rate of the gas G. Specifically, the discharge flow rate of the gas G is adjusted in accordance with the opening degree of the valve 725. In addition, according to the speed of opening the valve 725, the rising characteristic of the discharge flow rate of the gas G is adjusted, and the speed of closing the valve 725 is adjusted to adjust the decreasing characteristic of the discharge flow rate of the gas G. The valve 725 is, for example, an electric valve.

The flow meter 726 detects the flow rate of the gas G flowing through the gas supply pipe 72. In other words, the discharge flow rate of the gas G is detected. The heating heater 727 heats the gas G flowing through the gas supply pipe 72.

Next, the processing liquid circulation unit 300, the first processing liquid component supply unit 510, the second processing liquid component supply unit 520, and the processing liquid recovery unit 600 will be described with reference to FIG. 8. 8 is a schematic diagram showing the processing liquid circulation unit 300, the first processing liquid component supply unit 510, the second processing liquid component supply unit 520, and the processing liquid recovery unit 600 of this embodiment. As shown in FIG. 8, the substrate processing apparatus 100 further includes a processing liquid circulation unit 300, a first processing liquid component supply unit 510, a second processing liquid component supply unit 520, and a processing liquid recovery unit 600.

The processing liquid circulation unit 300 circulates the processing liquid L. Specifically, the processing liquid circulation unit 300 includes a mixing tank 301, a circulation piping 302, a heating heater 303, a pump 304, a valve 305, an overflow valve 306, an overflow piping 307, a temperature sensor 308, and a concentration sensor 309. Pressure sensor 310, and flow meter 311.

The mixing tank 301 accommodates the treatment liquid L. The circulation pipe 302 forms a circulation flow path through which the processing liquid L circulates. A processing liquid supply pipe 42 is connected to the circulation pipe 302.

The heating heater 303 heats the processing liquid L flowing through the circulation pipe 302. The pump 304 is arranged in the circulation pipe 302. The pump 304 sucks up the processing liquid L from the mixing tank 301 and sends the processing liquid L to the circulation pipe 302.

The valve 305 is arranged in the circulation pipe 302. The valve 305 controls the flow rate of the processing liquid L flowing through the circulation pipe 302. Specifically, the flow rate of the processing liquid L flowing through the circulation pipe 302 is adjusted in accordance with the opening degree of the valve 305. The valve 305 is, for example, an electric valve. Hereinafter, there are cases where the flow rate of the processing liquid L flowing through the circulation pipe 302 is described as the "processing liquid circulation flow rate".

The relief valve 306 is arranged in the circulation pipe 302. The overflow pipe 307 is connected to the overflow valve 306. When the overflow valve 306 is opened, the processing liquid L flows into the overflow pipe 307 from the circulation pipe 302. The overflow piping 307 guides the processing liquid L flowing in from the overflow valve 306 toward the mixing tank 301. Cooperate with the opening degree of the relief valve 306 to adjust the pressure of the circulating flow path.

The temperature sensor 308 detects the temperature of the processing liquid L flowing through the circulation pipe 302. The concentration sensor 309 detects the concentration of the etching component contained in the processing liquid L flowing through the circulation pipe 302. The pressure sensor 310 detects the pressure of the circulating flow path. The flow meter 311 detects the circulating flow rate of the processing liquid. Hereinafter, the temperature of the processing liquid L flowing through the circulation pipe 302 may be described as the "second processing liquid temperature". In addition, there is a case where the concentration of the etching component contained in the processing liquid L flowing through the circulation pipe 302 is described as the "second processing liquid concentration".

The first processing liquid component supply unit 510 supplies the first processing liquid component L1 to the mixing tank 301. The second processing liquid component supply unit 520 supplies the second processing liquid component L2 to the mixing tank 301. In the blending tank 301, the first processing liquid component L1 and the second processing liquid component L2 are blended to produce the processing liquid L. For example, the first treatment liquid component L1 is phosphoric acid, hydrofluoric acid, nitric acid, or ammonium hydroxide, and the second treatment liquid component L2 is pure water. Alternatively, the first treatment liquid component L1 is hydrofluoric acid, and the second treatment liquid component L2 is an aqueous nitric acid solution. Alternatively, the first treatment liquid component L1 is an aqueous nitric acid solution, and the second treatment liquid component L2 is hydrofluoric acid. Alternatively, the first treatment liquid component L1 is ammonium hydroxide, and the second treatment liquid component L2 is hydrogen peroxide water. Alternatively, the first treatment liquid component L1 is hydrogen peroxide water, and the second treatment liquid component L2 is ammonium hydroxide.

The first processing liquid component supply unit 510 includes a pipe 511, a regulator 512, a pressure sensor 513, and a quantitative discharge pump 514. The pipe 511 forms a first processing liquid component supply flow path through which the first processing liquid component L1 flows. The pipe 511 guides the first processing liquid component L1 to the mixing tank 301.

The regulator 512 is arranged in the pipe 511. The regulator 512 adjusts the pressure of the first processing liquid component supply flow path. The regulator 512 is, for example, an electropneumatic regulator.

The pressure sensor 513 detects the pressure of the first processing liquid component supply flow path. The quantitative discharge pump 514 is arranged in the pipe 511. The quantitative discharge pump 514 discharges a fixed amount of the first treatment liquid component L1 each time.

The second processing liquid component supply unit 520 includes a pipe 521, a regulator 522, and a pressure sensor 523. The pipe 521 forms a second processing liquid component supply flow path through which the second processing liquid component L2 flows. The pipe 521 guides the second processing liquid component L2 to the mixing tank 301.

The regulator 522 is arranged in the pipe 521. The regulator 522 adjusts the pressure of the second processing liquid component supply flow path. The regulator 522 is, for example, an electropneumatic regulator. The pressure sensor 523 detects the pressure of the second processing liquid component supply flow path.

The processing liquid recovery unit 600 supplies the used processing liquid L transported from the processing chamber 2 toward the mixing tank 301. The processing liquid recovery unit 600 includes a recovery tank 601, a first recovery pipe 602, a second recovery pipe 603, and a pump 604.

The first recovery pipe 602 guides the processed liquid L after use from the processing chamber 2 to the recovery tank 601. The recovery tank 601 contains the treated liquid L after use. The second recovery pipe 603 guides the treated liquid L after use from the recovery tank 601 to the blending tank 301. The pump 604 is arranged in the second recovery pipe 603. The pump 604 sucks up the used treatment liquid L from the recovery tank 601 and transports the used treatment liquid L to the second recovery pipe 603.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 6 to 9. FIG. 9 is a block diagram of the substrate processing apparatus 100. As shown in FIG. As shown in FIG. 9, the processor 11 executes a computer program stored in the memory unit 12 to control the processing liquid supply unit 40, the gas supply unit 70, the processing liquid circulation unit 300, the first processing liquid component supply unit 510, and the second processing unit. The liquid component supply unit 520 and the processing liquid recovery unit 600.

Specifically, the processor 11 controls the valve 423, the mixing valve 424, the heating heater 426, and the suction valve 427 included in the processing liquid supply unit 40.

The processor 11 can control the valve 423 and the mixing valve 424 to adjust the concentration of the etching component contained in the processing liquid L flowing through the processing liquid supply pipe 42 (first processing liquid concentration). The concentration of the first processing liquid is a setting condition of the substrate processing apparatus 100. Furthermore, the processor 11 can control the valve 423 to adjust the discharge flow rate of the treatment liquid L discharged from the treatment liquid nozzle 41. In addition, the processor 11 can control the valve 423 to adjust the rising and falling characteristics of the discharge flow rate of the treatment liquid L. The discharge flow rate of the processing liquid L, the increase characteristic of the discharge flow rate of the processing liquid L, and the decrease characteristic of the discharge flow rate of the processing liquid L are the setting conditions of the substrate processing apparatus 100.

In addition, the processor 11 can adjust the timing of the generation of the signal to start the discharge of the processing liquid L from the processing liquid nozzle 41 to adjust the timing of the start of the discharge of the processing liquid L. Specifically, the signal for starting the discharge of the treatment liquid L is a signal for opening the valve 423, and the timing of the generation of the signal for opening the valve 423 can be adjusted to adjust the starting time of the discharge of the treatment liquid L. The time when the signal to open the valve 423 is generated is the setting condition of the substrate processing apparatus 100.

In addition, the processor 11 can adjust the timing of generation of a signal to stop the discharge of the processing liquid L from the processing liquid nozzle 41 to adjust the timing of stopping the discharge of the processing liquid L. Specifically, the signal for stopping the discharge of the treatment liquid L is a signal for closing the valve 423, and the timing of the generation of the signal for closing the valve 423 can be adjusted to adjust the time when the discharge of the treatment liquid L is stopped. The timing at which the signal to close the valve 423 is generated is a setting condition of the substrate processing apparatus 100.

In addition, the processor 11 can adjust the timing of generation of a signal for changing the flow rate of the processing liquid L discharged from the processing liquid nozzle 41 to adjust the timing of the change of the discharge flow rate of the processing liquid L. Specifically, the signal for changing the flow rate discharged by the treatment liquid L is a signal for changing the opening degree of the valve 423, and the timing of generation of the signal for changing the opening degree of the valve 423 can be adjusted to adjust the time when the discharge flow rate of the treatment liquid L is changed. The time when the signal for changing the opening degree of the valve 423 is generated is the setting condition of the substrate processing apparatus 100.

The processor 11 can control the heating heater 426 to adjust the temperature of the processing liquid L flowing through the processing liquid supply pipe 42. Hereinafter, the temperature of the processing liquid L flowing through the processing liquid supply pipe 42 may be described as the "first processing liquid temperature". The temperature of the first processing liquid is a setting condition of the substrate processing apparatus 100.

The processor 11 can control the suction valve 427 to adjust the suction speed and the suction stop position described with reference to FIGS. 1 and 3. The suck-back speed and the suck-back stop position are the setting conditions of the substrate processing apparatus 100.

In addition, the processor 11 receives signals from the temperature sensor 421, the concentration sensor 422, and the flow meter 425 included in the processing liquid supply unit 40. The signal output by the temperature sensor 421 indicates the temperature of the first processing liquid. The signal output by the concentration sensor 422 indicates the concentration of the first processing solution. The signal output by the flow meter 425 indicates the discharge flow rate of the treatment liquid L. The temperature of the first processing liquid, the concentration of the first processing liquid, and the discharge flow rate of the processing liquid L are the execution conditions when etching is executed. The processor 11 stores information indicating the temperature of the first processing liquid, the concentration of the first processing liquid, and the discharge flow rate of the processing liquid L in the storage unit 12. Furthermore, the processor 11 detects the purity of the processing liquid L based on the signal output by the concentration sensor 422. The purity of the processing liquid L is the execution condition when the etching is executed, and the processor 11 stores information indicating the purity of the processing liquid L in the memory unit 12.

The processor 11 controls the regulator 721, the valve 725, and the heating heater 727 included in the gas supply unit 70.

The processor 11 can control the regulator 721 to adjust the pressure of the gas supply flow path. The pressure of the gas supply flow path is a setting condition of the substrate processing apparatus 100.

The processor 11 can control the valve 725 to adjust the spray flow rate of the gas G sprayed from the gas nozzle 71. In addition, the processor 11 can control the valve 725 to adjust the rising characteristic and the falling characteristic of the discharge flow rate of the gas G. The ejection flow rate of the gas G, the rising characteristic of the ejection flow rate of the gas G, and the falling characteristic of the ejection flow rate of the gas G are the setting conditions of the substrate processing apparatus 100.

In addition, the processor 11 can adjust the timing of generating the signal to start the ejection of the gas G from the gas nozzle 71 to adjust the timing of the ejection of the gas G. Specifically, the signal for starting the ejection of the gas G is a signal for opening the valve 725, and the timing of the generation of the signal for opening the valve 725 can be adjusted to adjust the start time of the ejection of the gas G. The time when the signal to open the valve 725 is generated is the setting condition of the substrate processing apparatus 100.

In addition, the processor 11 can adjust the timing of generation of the signal to stop the ejection of the gas G from the gas nozzle 71 to adjust the timing of the ejection of the gas G. Specifically, the signal for stopping the ejection of the gas G is a signal for closing the valve 725, and the timing of the generation of the signal for closing the valve 725 can be adjusted to adjust the timing for stopping the ejection of the gas G. The timing at which the signal to close the valve 725 is generated is a setting condition of the substrate processing apparatus 100.

In addition, the processor 11 can adjust the timing of the generation of the signal for changing the flow rate of the gas G from the gas nozzle 71 to adjust the timing of the change of the flow rate of the gas G. Specifically, the signal for changing the flow rate of the gas G is a signal for changing the opening of the valve 725, and the timing of the generation of the signal for changing the opening of the valve 725 can be adjusted to adjust the timing of the change of the flow of the gas G. The time when the signal for changing the opening degree of the valve 725 is generated is the setting condition of the substrate processing apparatus 100.

The processor 11 can control the heating heater 727 to adjust the temperature of the gas G flowing through the gas supply pipe 72. The temperature of the gas G is the setting condition of the substrate processing apparatus 100.

In addition, the processor 11 receives signals from the temperature sensor 722, the pressure sensor 723, the concentration sensor 724, and the flow meter 726 included in the processing liquid supply unit 40. The signal output by the temperature sensor 722 indicates the temperature of the gas G flowing through the gas supply pipe 72. The signal output by the pressure sensor 723 represents the pressure of the gas supply flow path. The signal output by the concentration sensor 724 represents the concentration of the inert component contained in the gas G (the concentration of the gas G). The signal output by the flow meter 726 indicates the discharge flow rate of the gas G. The temperature of the gas G, the pressure of the gas supply flow path, the concentration of the gas G, and the discharge flow rate of the gas G are the execution conditions when the etching is executed. The processor 11 stores information indicating the temperature of the gas G, the pressure of the gas supply flow path, the concentration of the gas G, and the discharge flow rate of the gas G in the memory unit 12. Furthermore, the processor 11 detects the purity of the gas G based on the signal output by the concentration sensor 724. The purity of the gas G is the execution condition when the etching is executed, and the processor 11 stores the information indicating the purity of the gas G in the memory unit 12.

The processor 11 controls the heating heater 303, the pump 304, the valve 305, and the relief valve 306 included in the processing liquid circulation unit 300.

The processor 11 can control the heating heater 303 to adjust the temperature of the processing liquid L flowing through the circulation pipe 302 (the temperature of the second processing liquid). The temperature of the second processing liquid is a setting condition of the substrate processing apparatus 100.

The processor 11 can control the valve 305 to adjust the flow rate of the treatment liquid L flowing through the circulation pipe 302 (treatment liquid circulation flow rate). The circulating flow rate of the processing liquid is a setting condition of the substrate processing apparatus 100.

The processor 11 can control the overflow valve 306 to adjust the pressure of the circulating flow path. The pressure of the circulation flow path is a setting condition of the substrate processing apparatus 100.

The processor 11 receives signals from the temperature sensor 308, the concentration sensor 309, the pressure sensor 310, and the flow meter 311 included in the processing liquid circulation unit 300. The signal output by the temperature sensor 308 indicates the temperature of the processing liquid L flowing through the circulation pipe 302 (the temperature of the second processing liquid). The signal output by the concentration sensor 309 indicates the concentration of the etching component contained in the processing liquid L flowing through the circulation pipe 302 (the second processing liquid concentration). The signal output by the pressure sensor 310 represents the pressure of the circulating flow path. The signal output by the flow meter 311 indicates the circulating flow rate of the processing liquid. The temperature of the second processing liquid, the concentration of the second processing liquid, the pressure of the circulating flow path, and the circulating flow rate of the processing liquid are the execution conditions when etching is performed. The processor 11 stores information indicating the temperature of the second processing liquid, the concentration of the second processing liquid, the pressure of the circulating flow path, and the circulating flow rate of the processing liquid in the storage unit 12.

The processor 11 controls the regulator 512 and the quantitative discharge pump 514 included in the first processing liquid component supply unit 510. The processor 11 can control the regulator 512 to adjust the pressure of the first processing liquid component supply flow path. In addition, the processor 11 can control the quantitative discharge pump 514 to adjust the concentration of the second processing liquid. The pressure of the first processing liquid component supply channel and the second processing liquid concentration are the setting conditions of the substrate processing apparatus 100.

The processor 11 receives a signal from the pressure sensor 513 included in the first processing liquid component supply unit 510. The signal output by the pressure sensor 513 indicates the pressure of the first processing liquid component supply flow path. The pressure of the first processing liquid component supply flow path is the execution condition when etching is executed. The processor 11 stores information indicating the pressure of the first processing liquid component supply channel in the storage unit 12.

The processor 11 can control the regulator 522 included in the second processing liquid component supply unit 520 to adjust the pressure of the second processing liquid component supply flow path. The pressure of the second processing liquid component supply flow path is a setting condition of the substrate processing apparatus 100.

The processor 11 receives a signal from the pressure sensor 523 included in the second processing liquid component supply unit 520. The signal output from the pressure sensor 523 indicates the pressure of the second processing liquid component supply flow path. The pressure of the second processing liquid component supply flow path is the execution condition when etching is executed. The processor 11 stores information indicating the pressure of the second processing liquid component supply channel in the storage unit 12.

Next, the substrate processing system 1000 of this embodiment will be described with reference to FIG. 10. FIG. 10 is a schematic diagram of the substrate processing system 1000 of this embodiment. As shown in FIG. 10, the substrate processing system 1000 includes a substrate processing apparatus 100 and an inspection apparatus 200.

The substrate processing apparatus 100 etches the substrate W as described with reference to FIGS. 1 and 2. Hereinafter, there are cases where the substrate W before being etched (the substrate W before being carried into the processing chamber 2) is described as "unprocessed substrate Wb". In addition, there is a case where the substrate W after being etched is described as "processed substrate Wa".

The inspection device 200 inspects the processed substrate Wa to create inspection result data of the processed substrate Wa. The inspection result data indicates the execution result of the etching. Specifically, the inspection apparatus 200 measures the film thickness for each radial position of the processed substrate Wa. In addition, the inspection device 200 generates data representing the etching amount for each radius position of the processed substrate Wa based on the measured film thickness data and the film thickness distribution data of the unprocessed substrate Wb.

Next, referring to FIG. 11, the etching amount for each radius position of the processed substrate Wa will be described. FIG. 11 is a diagram showing an example of the etching amount at each radius position of the processed substrate Wa. In other words, FIG. 11 shows an example of the etching profile. The etching profile is produced by drawing the etching amount of each radius position of the processed substrate Wa. In Fig. 11, the vertical axis represents the etching amount, and the horizontal axis represents the radius position of the processed substrate Wa.

The etching amount is preferably consistent with the target value in the entire area of the processed substrate Wa, but as shown in FIG. 11, there is a deviation in the actual etching amount. Therefore, the etching amount becomes an indicator of the performance or state of the substrate processing apparatus 100. In other words, the etching amount in the entire area of the processed substrate Wa is a characteristic amount of the execution result of etching.

In addition, the etching amount is preferably uniform in the entire area of the processed substrate Wa. Therefore, the uniformity (dispersion) of the etching amount becomes an indicator of the state or performance of the substrate processing apparatus 100. In other words, the uniformity of the etching amount is the characteristic amount of the execution result of the etching.

In addition, the data indicating the uniformity of the etching amount is not limited to dispersion. For example, the maximum value Emax and the minimum value Emin of the etching amount, and the average value of the etching amount also represent the uniformity of the etching amount. Therefore, the maximum value Emax and the minimum value Emin of the etching amount and the average value of the etching amount are also characteristic quantities of the execution result of the etching. In addition, the etching profile also indicates the uniformity of the etching amount. Therefore, the etching profile is also a characteristic quantity of the execution result of etching.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. 12. FIG. 12 is a block diagram of the substrate processing apparatus 100 of this embodiment. As shown in FIG. 12, the substrate processing apparatus 100 further includes an input unit 13.

The input unit 13 is a user interface device operated by an operator. The input unit 13 inputs data that cooperates with the operation of the operator to the processor 11. For example, the input unit 13 includes a keyboard and a mouse. Furthermore, the input unit 13 may also include a touch display. In this embodiment, the operator operates the input unit 13 to input the characteristic amount of the execution result of etching to the processor 11. The processor 11 stores the characteristic amount of the execution result of the etching in the memory unit 12.

Specifically, the operator operates the input unit 13 to input data indicating the etching amount in the entire area of the processed substrate Wa and data indicating the uniformity of the etching amount. The data representing the etching amount in the entire area of the processed substrate Wa may be an etching profile. Furthermore, the operator can also input one of the etching amount in the entire area of the processed substrate Wa and the uniformity (dispersion) of the etching amount. In addition, the operator may input at least one of the maximum value Emax and the minimum value Emin of the etching amount, and the average value of the etching amount instead of the dispersion or in addition to the dispersion. The uniformity (dispersion) of the etching amount can be calculated by the operator, and can also be calculated by the inspection device 200. Similarly, the maximum value Emax and the minimum value Emin of the etching amount, and the average value of the etching amount may be calculated by the operator, and may also be calculated by the inspection device 200.

The processor 11 stores the various execution conditions described with reference to FIG. 3, FIG. 5, and FIG. 9 and the feature amount of the execution result of etching in the memory unit 12. In addition, as the execution conditions, the storage unit 12 prestores data indicating the type of film that the unprocessed substrate Wb has, data indicating the film thickness distribution of the unprocessed substrate Wb, data indicating the thickness of the unprocessed substrate Wb, And data indicating the surface condition of the unprocessed substrate Wb. The type of the film includes, for example, at least one of a silicon oxide film and a silicon nitride film.

The processor 11 generates correction data for correcting at least one of the various setting conditions described with reference to FIGS. 3 and 9 based on the various execution conditions and the feature amount of the execution result of the etching.

Next, referring to FIG. 13, a method of correcting the setting conditions executed by the substrate processing apparatus 100 of the present embodiment will be described. Fig. 13 is a flowchart showing the correction method of this embodiment. As shown in FIG. 13, the correction method of this embodiment includes step S11 to step S13.

In the case of correcting the setting conditions, the processor 11 first memorizes the execution conditions described with reference to FIGS. 3, 5, 9, and 12 and the feature amount storage unit 12 described with reference to FIG. 12 (step S11).

Next, the processor 11 reads out and obtains the execution conditions and feature quantities from the memory unit 12, and generates settings for at least one of the various setting conditions described with reference to FIGS. 3 and 9 based on the obtained execution conditions and feature quantities. The corrected data to be corrected conditionally (step S12).

Next, the processor 11 performs the setting conditions corresponding to the correction based on the correction data (step S13), and ends the processing shown in FIG. 13.

The processor 11 of this embodiment uses the learned model generated by machine learning to generate correction data. Specifically, the processor 11 inputs the execution conditions and feature quantities read and acquired from the storage unit 12 to the learned model. As a result, the self-learning model is completed and the corrected data is output. The mechanical learning department includes, for example, any of supervised learning, unsupervised learning, semi-supervised learning, intensive learning, and deep learning.

Next, the learned model 130 of this embodiment will be described with reference to FIG. 14. FIG. 14 is a schematic diagram of the learned model 130. As shown in Figure 14, the learning model 130 is a neural network. The processor 11 uses a neural network to generate correction data. Hereinafter, there are cases where the learned model 130 is described as "neural network 130".

As shown in FIG. 14, the neural network 130 has an input layer 131, an intermediate layer 132, and an output layer 133. The processor 11 inputs the execution conditions and feature quantities read and obtained from the storage unit 12 to the input layer 131. As a result, the correction data is output from the output layer 133. Furthermore, the setting conditions that become the target of correction may be specified in advance, or the neural network 130 may determine the setting conditions that become the target of correction. In addition, the intermediate layer 132 of the neural network 130 shown in FIG. 14 is one layer, but the neural network 130 may also have a multi-layer structure.

Next, the machine learning performed by the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. 15. Fig. 15 is a flowchart showing the learning method of this embodiment. As shown in FIG. 15, the learning method of this embodiment includes steps S21 to S23.

In the case of performing machine learning, guidance information (guidance data) is input to the processor 11 (step S21). The processor 11 stores the input guidance information in the storage unit 12. The guidance information is information obtained when the feature amount described with reference to FIG. 12 is an optimal value. That is, the guidance information includes the execution conditions obtained when the feature quantity is the optimal value, and the feature quantity indicating the optimal value. Furthermore, the guidance information includes setting conditions obtained when the feature quantity is a value representing the best value.

Next, the processor 11 reads out and obtains the guidance information (execution conditions, feature quantities, and setting conditions) from the memory unit 12, and executes machine learning based on the obtained guidance information (step S22), and generates the learned model 130 (step S23). ), the processing shown in Figure 15 is ended. Specifically, the processor 11 measures the change in the etching amount in accordance with the execution conditions and the setting conditions, and the change in the uniformity of the etching amount in accordance with the execution conditions and the setting conditions from a plurality of guidance information, and updates the weights based on the measurement results. coefficient.

Above, the first embodiment has been described. According to this embodiment, the operator can correct (adjust) the setting conditions without manually changing the setting conditions. Therefore, the burden on the operator can be reduced.

Furthermore, the setting conditions may be part of the setting conditions described in this embodiment.

In addition, the environmental conditions of the factory where the substrate processing apparatus 100 is installed can also be added to the execution conditions. Specifically, information indicating the temperature, humidity, oxygen concentration, ammonia concentration, VOC concentration, and air pressure of the ambient gas installed in the substrate processing apparatus 100, and the height of the factory installation location can also be input to the processing as execution conditions.器11. In this case, from the temperature sensor, humidity sensor, oxygen concentration sensor, ammonia concentration sensor, VOC concentration sensor, air pressure sensor, and altitude sensor installed in the factory, Input temperature data, humidity data, oxygen concentration data, ammonia concentration data, VOC concentration data, air pressure data, and altitude data to the processor 11.

[Embodiment 2]

Next, the second embodiment of the present invention will be described with reference to FIG. 16. Among them, matters different from the first embodiment will be described, and descriptions of the same matters as those of the first embodiment will be omitted. The second embodiment is different from the first embodiment in that the correction data generating device 1100 generates the correction data.

FIG. 16 is a schematic diagram of the substrate processing system 1000 of the second embodiment. As shown in FIG. 16, the substrate processing system 1000 of Embodiment 2 is provided with the substrate processing apparatus 100, the inspection apparatus 200, and the correction|amendment data generating apparatus 1100.

The substrate processing apparatus 100 includes a communication interface 14. The communication interface 14 controls communication with the correction data generating device 1100. Specifically, the communication interface 14 transmits the data indicating the execution conditions to the correction data generating device 1100. In addition, the communication interface 14 receives the correction data from the correction data generating device 1100. The communication interface 14 is, for example, a LAN (Local Area Network, local area network) board or a wireless LAN board. The substrate processing apparatus 100 corrects (adjusts) the setting conditions of the correction target based on the correction data received from the correction data generation device 1100.

The inspection device 200 is provided with a communication interface 201. The communication interface 201 controls communication with the correction data generating device 1100. Specifically, the communication interface 201 transmits the data representing the characteristic amount to the correction data generating device 1100. The communication interface 201 is, for example, a LAN board or a wireless LAN board.

The correction data generating device 1100 includes a communication interface 1101 and a control unit 1110. The correction data generating device 1100 is, for example, a server device.

The communication interface 1101 controls communication with the substrate processing apparatus 100 and communication with the inspection apparatus 200. Specifically, the communication interface 1101 receives data indicating execution conditions from the substrate processing apparatus 100. In addition, the communication interface 1101 receives data representing the characteristic amount from the inspection device 200. Furthermore, the communication interface 1101 transmits correction data to the substrate processing apparatus 100.

The control unit 1110 generates correction data based on the execution conditions received from the substrate processing apparatus 100 and the characteristic amount from the inspection apparatus 200. Specifically, the control unit 1110 includes a processor 1111 and a storage unit 1112. The processor 1111 is, for example, a central processing unit (CPU). Alternatively, the processor 1111 is a general-purpose arithmetic unit. The memory 1112 stores data and computer programs. The storage unit 1112 includes a main storage device and an auxiliary storage device. The main memory device is constituted by, for example, semiconductor memory. The auxiliary memory device is composed of, for example, a semiconductor memory and/or a hard disk drive. The storage unit 1112 may also include removable media.

The processor 1111, like the processor 11 described in the first embodiment, generates correction data based on the execution conditions and the feature amount. When the processor 1111 generates the correction data, it transmits the correction data to the substrate processing apparatus 100 via the communication interface 1101. In addition, the processor 1111, like the processor 11 described in the first embodiment, generates the learned model 130 based on the guidance information (guidance data). Furthermore, the data indicating the execution conditions and the data indicating the setting conditions in the guidance information are sent from the substrate processing apparatus 100 to the correction data generating apparatus 1100. In addition, the data indicating the characteristic amount in the guidance information is sent from the inspection device 200 to the correction data generating device 1100.

Above, the second embodiment has been described. According to this embodiment, as in the first embodiment, the operator can correct (adjust) the setting conditions without manually changing the setting conditions. Therefore, the burden on the operator can be reduced.

Above, the embodiments of the present invention have been described with reference to the drawings. However, the present invention is not limited to the above-mentioned embodiments, and can be implemented in various forms without departing from the scope of the gist.

For example, in the embodiment of the present invention, the inspection apparatus 200 measures the film thickness, but the substrate processing apparatus 100 may include a film thickness measurement sensor for measuring the film thickness.

Furthermore, in the embodiment of the present invention, the etching amount of each radius position of the processed substrate Wa is drawn to create the etching profile, but the etching profile may also be created based on the measurement result of the thickness of the processed substrate Wa.

Furthermore, in the embodiment of the present invention, based on the image signal (temperature distribution data) generated by the thermal imaging camera 101, the processor 11 detects the temperature of the processing liquid L at the front end of the processing liquid nozzle 41 and before the gas nozzle 71 The temperature of the gas G at the end, but the processor 11 can also detect the temperature of the treatment liquid L at the front end of the treatment liquid nozzle 41 and the temperature of the treatment liquid L at the front end of the gas nozzle 71 based on the output signals of the temperature sensor 421 and the temperature sensor 722 The temperature of gas G.

In the embodiment of the present invention, the processor 11 detects the start time of the discharge of the treatment liquid L, the stop time of the discharge of the treatment liquid L, the time when the discharge flow rate of the treatment liquid L is changed based on the imaging signal generated by the video camera 102, The discharge flow rate increase characteristic of the treatment liquid L, the discharge flow rate decrease characteristic of the treatment liquid L, the discharge start time of the gas G, the discharge stop time of the gas G, the discharge flow change time of the gas G, the discharge flow increase characteristic of the gas G, and the gas The discharge flow rate drop characteristic of G, but the processor 11 may also detect the start time of discharge of the treatment liquid L based on the output signals of the flow meter 425 and the flow meter 726.

Moreover, in the embodiment of the present invention, the concentration sensor 422 is used to detect the purity of the treatment liquid L, but a resistivity meter may also be used to detect the purity of the treatment liquid L. Similarly, in the embodiment of the present invention, the concentration sensor 724 is used to detect the purity of the gas G, but a resistivity meter may also be used to detect the purity of the gas G.

Furthermore, in the embodiment of the present invention, the video camera 102 is used to detect the eccentricity of the substrate W and the surface wobble of the substrate W, but a displacement sensor can also be used to detect the eccentricity of the substrate W and the substrate W The amount of surface vibration.

In addition, it is also possible to use a part of the execution conditions described in the embodiment of the present invention to generate correction data. Furthermore, it is preferable that the execution conditions used include exhaust air velocity, exhaust air volume, the rotation speed of the substrate W, the rotation acceleration of the substrate W, the time when the rotation speed of the substrate W is changed, and the radial direction of the processing liquid nozzle 41 The position, the moving speed of the processing liquid nozzle 41, the acceleration of the processing liquid nozzle 41, the time when the position of the processing liquid nozzle 41 in the radial direction is changed, the time when the moving speed of the processing liquid nozzle 41 is changed, and the vertical position of the liquid receiving portion 8 , The moving speed of the liquid receiving part 8, the acceleration of the liquid receiving part 8, the time when the position of the liquid receiving part 8 in the vertical direction is changed, the time when the moving speed of the liquid receiving part 8 is changed, the processing liquid L at the front end of the processing liquid nozzle 41 The temperature, the temperature of the gas G at the front end of the gas nozzle 71, the substrate surface temperature, the time when the discharge of the processing liquid L starts, the time when the discharge of the processing liquid L stops, the time when the discharge flow of the processing liquid L changes, and the discharge flow of the processing liquid L increases Characteristics, the discharge flow rate decrease characteristic of the treatment liquid L, the discharge start time point of the gas G, the discharge stop time point of the gas G, the discharge flow rate change time point of the gas G, the discharge flow rate increase characteristic of the gas G, the discharge flow rate decrease characteristic of the gas G, The suction speed of the treatment liquid L, the suction stop position of the treatment liquid L, the presence or absence of dripping of the treatment liquid L, the film thickness distribution of the treatment liquid L, the difference between the treatment liquid L on the upper surface and the outer side of the liquid receiving part 8 The presence or absence of adhesion, the amount of processing liquid L adhering to the upper and outer surfaces of the liquid receiving portion 8, the amount of eccentricity of the substrate W, the amount of surface wobble of the substrate W, the air supply air speed, the air supply air volume, and the concentration of the first processing liquid , The discharge flow rate of the processing liquid L, the discharge flow rate of the gas G, the differential pressure of the FFU22, the substrate heating temperature, the amount of light in the processing chamber 2, the temperature of the liquid receiving part 8, the temperature of the nozzle arm 43, the temperature of the rotating base 31, The temperature of the partition wall 21, the purity of the treatment liquid L, the purity of the gas G, the change of the position of the treatment liquid nozzle 41, the change of the shape of the nozzle arm 43, the change of the shape of the heater arm 52, the position of the eluent nozzle 61 Changes in the position of the gas nozzle 71, changes in the position of the liquid receiving portion 8, changes in the shape of the liquid receiving portion 8, changes in the shape of the chuck pin 32, abrasion of the chuck pin 32, airflow distribution, substrate Surface potential, differential pressure of valve 233, concentration of treatment liquid ambient gas, humidity in treatment chamber 2, oxygen concentration in treatment chamber 2, ammonia concentration in treatment chamber 2, VOC concentration in treatment chamber 2, and circulation flow path At least one of the pressures. More preferably, the execution conditions used include exhaust air speed, exhaust air volume, the rotation speed of the substrate W, the rotation acceleration of the substrate W, the time when the rotation speed of the substrate W is changed, the position of the processing liquid nozzle 41 in the radial direction, The moving speed of the processing liquid nozzle 41, the acceleration of the processing liquid nozzle 41, the time when the position of the processing liquid nozzle 41 in the radial direction is changed, the time when the moving speed of the processing liquid nozzle 41 is changed, the position of the liquid receiving portion 8 in the vertical direction, the support The moving speed of the liquid part 8, the acceleration of the liquid receiving part 8, the time of changing the position of the liquid receiving part 8 in the vertical direction, the time of changing the moving speed of the liquid receiving part 8, the temperature of the processing liquid L at the front end of the processing liquid nozzle 41 , The temperature of the gas G at the front end of the gas nozzle 71, the surface temperature of the substrate, the start time of the discharge of the processing liquid L, the stop time of the discharge of the processing liquid L, the time when the discharge flow of the processing liquid L is changed, the discharge flow rate increase characteristics of the processing liquid L, The discharge flow rate decrease characteristics of the treatment liquid L, the discharge start time of the gas G, the discharge stop time of the gas G, the discharge flow change time of the gas G, the discharge flow rate increase characteristics of the gas G, the discharge flow rate decrease characteristics of the gas G, and the treatment liquid L The suck-back speed, the suck-back stop position of the treatment liquid L, the presence or absence of dripping of the treatment liquid L, the film thickness distribution of the treatment liquid L, the presence or absence of adhesion of the treatment liquid L on the upper and outer surfaces of the liquid receiving part 8 , The amount of processing liquid L attached to the upper and outer surfaces of the liquid receiving portion 8, the amount of eccentricity of the substrate W, the amount of surface wobble of the substrate W, the air supply wind speed, the air supply air volume, the concentration of the first processing liquid, the processing liquid At least one of the discharge flow rate of L and the discharge flow rate of gas G.

Furthermore, in the embodiment of the present invention, the substrate W is a semiconductor wafer, but the substrate W may also be a substrate for liquid crystal display devices, a substrate for Field Emission Display (FED), a substrate for optical disks, and a substrate for magnetic disks. , Any one of substrates for magneto-optical discs, substrates for photomasks, ceramic substrates, and substrates for solar cells.

In addition, in the embodiment of the present invention, the rotating chuck 3 is a clamping chuck in which a plurality of chuck pins 32 are in contact with the peripheral end surface of the substrate W, but the rotating chuck 3 may also be a non- The back surface (lower surface) of the substrate W on the element formation surface is sucked onto the upper surface of the spin base 31 to hold the substrate W in a horizontal vacuum chuck.

In addition, in the embodiment of the present invention, the substrate processing apparatus 100 is a single-piece type that processes the substrates W one by one, but the substrate processing apparatus 100 may be a batch type that processes a plurality of substrates W at the same time.

(Industrial availability)

The present invention is preferably used in a substrate processing apparatus for processing substrates.

Claims (7)

A correction method that corrects the setting conditions of a substrate processing apparatus that etches a substrate with a processing liquid; and includes: an obtaining step, which obtains at least one execution condition among the execution conditions when the etching is executed, and At least one feature quantity representing the execution result of the above-mentioned etching; a generating step, which is based on the above-mentioned at least one execution condition and the above-mentioned at least one feature quantity, generating correction data for correcting at least one of the above-mentioned setting conditions And a correction step, which is that the substrate processing apparatus corrects the at least one setting condition based on the correction data; the at least one characteristic quantity includes at least one of the etching amount and the uniformity of the etching amount. Such as the correction method of claim 1, wherein, in the above-mentioned obtaining step, the above-mentioned at least one execution condition and the above-mentioned at least one feature quantity are input to the learned model generated by machine learning, and in the above-mentioned generating step, from the above After learning, the model outputs the above-mentioned correction data. For example, the correction method of claim 2, which further includes a learning step of mechanically learning the guidance information to generate the above-mentioned learned model, and the above-mentioned guidance information is in the case where the above-mentioned at least one feature quantity is an optimal value The obtained information includes the above-mentioned at least one feature quantity, the above-mentioned at least one execution condition, and the above-mentioned at least one setting condition. Such as the correction method of any one of Claims 1 to 3, wherein the above-mentioned substrate processing apparatus is provided with: A processing chamber that houses the substrate; a first nozzle that discharges a processing liquid for etching the substrate toward the substrate; a supply flow path that supplies the processing liquid to the first nozzle; a liquid receiving portion that is received from the substrate The dispersed processing liquid; a second nozzle that ejects gas toward the substrate; a fan filter unit that delivers air into the processing chamber; and an exhaust fan that exhausts the gas from the processing chamber; when the etching is performed The execution conditions include: the temperature of the treatment liquid at the front end of the first nozzle, the temperature of the gas at the front end of the second nozzle, the flow rate of the treatment liquid discharged from the first nozzle, and the gas from the second nozzle. The flow rate discharged from the nozzle, the time when the treatment liquid started to be discharged from the first nozzle, the time when the gas started to be discharged from the second nozzle, the time when the discharge of the treatment liquid from the first nozzle was stopped, and the time when the discharge of the treatment liquid from the first nozzle was stopped. 2 The time when the ejection of the gas from the nozzle is stopped, the time when the flow rate of the processing liquid from the first nozzle is changed, the time when the flow rate of the gas from the second nozzle is changed, and the processing liquid from the first nozzle The rising characteristic of the flow rate discharged from the nozzle, the rising characteristic of the flow rate discharged from the second nozzle of the gas, the decreasing characteristic of the flow rate discharged from the first nozzle of the treatment liquid, the rate of the gas discharged from the second nozzle Flow rate drop characteristics, information indicating whether the processing liquid drips from the front end of the first nozzle, the concentration of the processing liquid flowing through the supply flow path, After the discharge of the processing liquid is stopped, the speed at which the processing liquid is sucked from the first nozzle toward the upstream side of the supply flow path, the position where the sucked processing liquid stops, and the film thickness distribution of the processing liquid covering the substrate , The position of the first nozzle, the moving speed of the first nozzle, the acceleration of the first nozzle, the time when the position of the first nozzle is changed, the time when the moving speed of the first nozzle is changed, indicating whether the processing liquid is attached Information on the liquid-receiving part, the amount of the processing liquid attached to the liquid-receiving part, the rotation speed of the substrate, the acceleration of the substrate, the time when the rotation speed of the substrate is changed, the surface temperature of the substrate, the temperature of the substrate The amount of eccentricity, the amount of surface wobble of the substrate, the position of the liquid receiving part, the moving speed of the liquid receiving part, the acceleration of the liquid receiving part, the time point of changing the position of the liquid receiving part, the moving speed of the liquid receiving part The timing of the change, the wind speed of the air delivered by the fan filter unit into the processing room, the air volume of the air delivered by the fan filter unit into the processing room, At least one of the wind speed of the gas exhausted from the processing chamber and the wind volume of the gas exhausted from the processing chamber. The correction method according to any one of claims 1 to 3, wherein the substrate processing apparatus includes: a processing chamber that houses the substrate; a first nozzle that discharges a processing liquid for etching the substrate toward the substrate; and 1 supply flow path, which supplies the treatment liquid to the first nozzle; a circulation flow path, which is connected to the first supply flow path to circulate the treatment liquid; a second supply flow path, which supplies the circulation flow path The processing liquid; a heating section that heats the substrate; a liquid receiving section that receives the processing liquid scattered from the substrate; a second nozzle that ejects gas toward the substrate; a third supply flow path that faces the second The nozzle supplies the gas; a fan filter unit that delivers air to the processing chamber; an exhaust fan that exhausts the gas from the processing chamber; an exhaust pipe that allows the exhausted gas to flow from the processing chamber; and The valve is installed in the exhaust pipe; and the setting conditions of the substrate processing apparatus include: the temperature of the processing liquid in the circulation flow path, the temperature of the processing liquid in the first supply flow path, and the temperature of the processing liquid in the first supply flow path. 3 The temperature of the gas supplied to the flow path, the concentration of the treatment liquid in the circulation flow path, the concentration of the treatment liquid in the first supply flow path, The pressure of the second supply flow path, the pressure of the third supply flow path, the pressure of the circulation flow path, the flow rate of the treatment liquid flowing through the circulation flow path, and the flow rate of the treatment liquid discharged from the first nozzle , The flow rate of the gas ejected from the second nozzle, the time when the signal to start the ejection of the processing liquid from the first nozzle is generated, the time when the signal to start the ejection of the gas from the second nozzle is generated, The timing of generation of the signal to stop the discharge of the processing liquid from the first nozzle, the timing of generation of the signal to stop the discharge of the gas from the second nozzle, change the flow rate of the processing liquid from the first nozzle The timing of the generation of the signal, the timing of the generation of the signal that changes the flow rate of the gas ejected from the second nozzle, the rise characteristics of the flow rate of the process liquid ejected from the first nozzle, and the gas ejected from the second nozzle The flow rate rise characteristics, the flow rate drop characteristics of the processing liquid discharged from the first nozzle, the decline characteristics of the gas flow rate discharged from the second nozzle, and the direction from the first nozzle after the discharge of the processing liquid is stopped The speed at which the processing liquid is sucked on the upstream side of the first supply flow path, the position where the sucked processing liquid stops, the rotation speed of the substrate, the acceleration of the substrate, the timing of change of the rotation speed of the substrate, the first The position of the nozzle, The moving speed of the first nozzle, the acceleration of the first nozzle, the time when the position of the first nozzle is changed, the time when the moving speed of the first nozzle is changed, the temperature at which the substrate is heated, the position of the liquid receiving part, and the The moving speed of the liquid receiving part, the acceleration of the liquid receiving part, the time when the position of the liquid receiving part is changed, the time when the moving speed of the liquid receiving part is changed, the differential pressure of the fan filter unit, the differential pressure of the valve, and the At least one of the wind speed of the gas exhausted from the processing chamber, the wind volume of the gas exhausted from the processing chamber, and the amount of light in the processing chamber. A substrate processing apparatus that etches a substrate with a processing liquid, and is provided with a control unit based on at least one of the execution conditions when the etching is executed, and the execution result of the etching At least one feature quantity of the above-mentioned substrate processing apparatus is generated to generate correction data for correcting at least one of the setting conditions of the substrate processing apparatus, and the control unit corrects the at least one setting condition based on the correction data, and the at least one The characteristic amount includes at least one of the etching amount and the uniformity of the etching amount By. A substrate processing system includes: a substrate processing device that etches a substrate with a processing liquid; and a correction data generating device that outputs correction data for correcting the setting conditions of the substrate processing device; the correction data generating device Equipped with a control unit that generates one of the setting conditions for the substrate processing apparatus based on at least one of the execution conditions during the execution of the etching and at least one characteristic quantity representing the result of the execution of the etching At least one correction data for correcting setting conditions, the substrate processing apparatus corrects the at least one setting condition based on the correction data, and the at least one feature quantity includes at least one of an etching amount and a uniformity of the etching amount.

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