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TWI637071B - Copper foil for flexible printed circuit boards, copper-clad laminates using the same, flexible printed circuit boards, and electronic devices - Google Patents

Copper foil for flexible printed circuit boards, copper-clad laminates using the same, flexible printed circuit boards, and electronic devices Download PDF

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TWI637071B
TWI637071B TW106104023A TW106104023A TWI637071B TW I637071 B TWI637071 B TW I637071B TW 106104023 A TW106104023 A TW 106104023A TW 106104023 A TW106104023 A TW 106104023A TW I637071 B TWI637071 B TW I637071B
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copper foil
flexible printed
printed circuit
copper
circuit board
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TW106104023A
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TW201802255A (en
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坂東慎介
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Jx金屬股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/02Alloys based on copper with tin as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/06Alloys based on copper with nickel or cobalt as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • C25D7/0614Strips or foils
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/08PCBs, i.e. printed circuit boards
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0355Metal foils

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

本發明提供一種蝕刻性優異之可撓性印刷基板用銅箔。 The present invention provides a copper foil for a flexible printed circuit board having excellent etching properties.

本發明之可撓性印刷基板用銅箔由99.0質量%以上之Cu、剩餘部分為不可避免之雜質構成,平均結晶粒徑為0.6~4.3μm,且MD方向之拉伸強度為230~287MPa,於MD方向及CD方向分別對浸漬於過硫酸鈉濃度100g/L、過氧化氫濃度35g/L之水溶液(液體溫度25℃)420秒後之表面基於JIS B 0601-2001之偏斜度Rsk進行16次測量,將各次測量值的絕對值平均而得之值為0.05以下。 The copper foil for a flexible printed circuit board of the present invention is composed of 99.0% by mass or more of Cu, and the remainder is unavoidable impurities. The average crystal grain size is 0.6 to 4.3 μm, and the tensile strength in the MD direction is 230 to 287 MPa. The surface after immersion in the MD direction and the CD direction for 420 seconds after being immersed in an aqueous solution (liquid temperature 25 ° C.) of 100 g / L of sodium persulfate concentration and 35 g / L of hydrogen peroxide concentration is based on the skewness Rsk of JIS B 0601-2001. For 16 measurements, the absolute value of each measurement was averaged to obtain a value of 0.05 or less.

Description

可撓性印刷基板用銅箔、使用其之包銅層板、可撓性印刷基板、及電子機器 Copper foil for flexible printed circuit boards, copper-clad laminates using the same, flexible printed circuit boards, and electronic devices

本發明係關於一種適合用於可撓性印刷基板等之配線構件之銅箔、使用其之包銅層板、可撓性配線板、及電子機器。 The present invention relates to a copper foil suitable for a wiring member such as a flexible printed circuit board, a copper clad laminate using the same, a flexible wiring board, and an electronic device.

由於可撓性印刷基板(可撓性配線板,以下稱為「FPC」)具有可撓性,故而廣泛用於電子電路之彎折部或可動部。例如,FPC用於HDD或DVD及CD-ROM等碟片相關機器之可動部、或者摺疊式行動電話機之彎折部等。 A flexible printed circuit board (flexible wiring board, hereinafter referred to as "FPC") has flexibility, and is therefore widely used in a bent portion or a movable portion of an electronic circuit. For example, FPC is used for moving parts of HDD or DVD- and CD-ROM-related equipment, or bending parts of folding mobile phones.

FPC係藉由對積層有銅箔與樹脂之包銅層板(Copper Clad Laminate,以下稱為CCL)進行蝕刻而形成配線,並由被稱為覆蓋層之樹脂層將其上被覆而成者。於積層覆蓋層之前階段,作為用以提高銅箔與覆蓋層之密接性的表面改質步驟之一環,進行銅箔表面之蝕刻。又,為了減小銅箔之厚度而提高彎曲性,有時亦進行軟蝕刻。 FPC is formed by etching a copper clad laminate (copper clad laminate) (hereinafter referred to as CCL) laminated with a copper foil and a resin, and covering it with a resin layer called a cover layer. At the stage before laminating the cover layer, the surface of the copper foil is etched as part of a surface modification step to improve the adhesion between the copper foil and the cover layer. In order to reduce the thickness of the copper foil and improve the flexibility, soft etching may be performed.

對於用於FPC之銅箔之中形成用以蝕刻形成電路之光阻劑之面,為了賦予其與光阻劑之密接性而進行軟蝕刻。軟蝕刻係去除銅箔表面之氧化膜並且使表面平坦化之表面處理。然而,進行軟蝕刻時,會發生 在壓延銅箔之表面產生凹部之被稱為碟型下陷(dish down)之異常。該碟型下陷係起因於壓延銅箔之厚度方向蝕刻速度不同而表面成為凹凸狀,從而降低了光阻劑密接性。並且,蝕刻速度不同之產生原因在於,蝕刻速度根據壓延銅箔之表面的結晶方位而不同。 The surface of the copper foil used for FPC to form a photoresist for etching to form a circuit is soft-etched in order to impart adhesion to the photoresist. Soft etching is a surface treatment that removes the oxide film on the surface of the copper foil and flattens the surface. However, when soft etching is performed, An abnormality called a dish-down, in which a recessed portion is formed on the surface of a rolled copper foil. This dish-shaped depression is caused by the difference in etching speed in the thickness direction of the rolled copper foil and the surface becomes uneven, thereby reducing the photoresist adhesiveness. The reason why the etching speed is different is that the etching speed is different depending on the crystal orientation of the surface of the rolled copper foil.

因此,開發了減少與其他結晶面相比蝕刻速度更慢(200)之面的比率,改善了軟蝕刻性之壓延銅箔(專利文獻1)。 Therefore, a rolled copper foil has been developed that reduces the ratio of the surface whose etching speed is slower (200) than other crystal surfaces, and improves the soft etchability (Patent Document 1).

[專利文獻1]日本專利特開2014-77182號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2014-77182

然而,伴隨著電子機器之小型、薄型、高性能化,需要將FPC高密度地安裝於該等機器之內部,但為了進行高密度安裝,需要進一步將電路微細化,並且將厚度小之FPC彎折並收容於小型化之機器的內部。並且,為了謀求電路之微細化,更進一步需求蝕刻形成電路之光阻劑與銅箔之密接性。即,若銅箔與光阻劑之密接性低,則蝕刻液會滲入銅箔與光阻劑之間,而難以形成微細之配線。 However, along with the miniaturization, thinness, and high performance of electronic devices, it is necessary to mount FPCs inside these devices at high density. However, in order to perform high-density mounting, it is necessary to further refine the circuit and bend the FPC with a small thickness Folded and housed inside a miniaturized machine. In addition, in order to miniaturize the circuit, the adhesion between the photoresist for etching the circuit and the copper foil is further required. That is, if the adhesion between the copper foil and the photoresist is low, the etchant will penetrate between the copper foil and the photoresist, and it is difficult to form fine wiring.

然而,於以往之銅箔的情形時,進行軟蝕刻後之表面的平坦化難言為充分,電路之微細化困難。 However, in the case of the conventional copper foil, it is difficult to say that the planarization of the surface after soft etching is sufficient, and it is difficult to miniaturize the circuit.

又,伴隨著電子機器之小型、薄型、高性能化,存在FPC之電路寬度、間隙寬度亦微細化為20~30μm左右,而藉由蝕刻形成電路時蝕刻因數或電路直線性易變差之問題,亦需求解決該問題。 In addition, along with the miniaturization, thinness, and high performance of electronic devices, there is a problem that the circuit width and gap width of the FPC are also reduced to about 20 to 30 μm, and the etching factor or the linearity of the circuit is easily deteriorated when the circuit is formed by etching. Also need to solve this problem.

本發明係為了解決上述課題而成者,目的在於提供一種蝕刻性優異之 可撓性印刷基板用銅箔、使用其之包銅層板、可撓性印刷基板、及電子機器。 The present invention has been made to solve the above-mentioned problems, and an object thereof is to provide an excellent etching property. Copper foil for flexible printed boards, copper-clad laminates using the same, flexible printed boards, and electronic devices.

本發明人等進行了各種研究,結果發現,藉由將銅箔之晶粒微細化,且規定蝕刻後之銅箔的偏斜度Rsk,可提高蝕刻性。但是,若將晶粒過於微細化,則強度變得過高而抗撓剛度變大,回彈變大,從而不適合可撓性印刷基板用途。因此,規定了結晶粒徑及拉伸強度之範圍。 The present inventors have conducted various studies, and as a result, have found that by miniaturizing the grains of the copper foil and specifying the skewness Rsk of the copper foil after etching, the etching properties can be improved. However, if the crystal grains are made too fine, the strength becomes too high, the flexural rigidity becomes large, and the springback becomes large, making it unsuitable for flexible printed circuit board applications. Therefore, the range of crystal grain size and tensile strength is specified.

又,亦可藉由將結晶粒徑微細化為近年來之FPC之20~30μm左右的電路寬度之約1/10左右,而改善藉由蝕刻而形成電路時之蝕刻因數或電路直線性。 In addition, it is possible to refine the crystal grain size to about 1/10 of the circuit width of about 20 to 30 μm of FPC in recent years, thereby improving the etching factor or circuit linearity when forming a circuit by etching.

即,本發明之可撓性印刷基板用銅箔由99.0質量%以上之Cu、剩餘部分為不可避免之雜質構成,平均結晶粒徑為0.6~4.3μm,且MD方向之拉伸強度為230~287MPa,於MD方向及CD方向分別對浸漬於過硫酸鈉濃度100g/L、過氧化氫濃度35g/L之水溶液(液體溫度25℃)420秒後之表面基於JIS B 0601-2001之偏斜度Rsk進行16次測量,將各次測量值的絕對值平均而得之值為0.05以下。 That is, the copper foil for a flexible printed circuit board of the present invention is composed of 99.0% by mass or more of Cu, and the remainder is unavoidable impurities. The average crystal grain size is 0.6 to 4.3 μm, and the tensile strength in the MD direction is 230 to 287 MPa, in the MD direction and the CD direction, respectively, immersed in an aqueous solution of sodium persulfate concentration of 100 g / L and hydrogen peroxide concentration of 35 g / L (liquid temperature 25 ° C) for 420 seconds based on the skewness of JIS B 0601-2001 Rsk performs 16 measurements and averages the absolute value of each measurement to obtain a value of 0.05 or less.

本發明之可撓性印刷基板用銅箔較佳由符合JIS-H3100(C1100)規格之精銅或JIS-H3100(C1011)之無氧銅構成。 The copper foil for a flexible printed circuit board of the present invention is preferably composed of fine copper conforming to JIS-H3100 (C1100) standard or oxygen-free copper conforming to JIS-H3100 (C1011).

本發明之可撓性印刷基板用銅箔較佳進而含有合計為0.003~0.825質量%之選自P、Ti、Sn、Ni、Be、Zn、In及Mg之群之1種以上的添加元素而成。 The copper foil for a flexible printed circuit board of the present invention preferably further contains one or more additional elements selected from the group consisting of P, Ti, Sn, Ni, Be, Zn, In, and Mg in a total amount of 0.003 to 0.825% by mass. to make.

較佳為上述銅箔為壓延銅箔,於300℃進行30分鐘之熱處 理後之上述平均結晶粒徑為0.6~4.3μm,上述拉伸強度為230~287MPa,且該熱處理後之上述偏斜度Rsk為0.05以下。 Preferably, the above-mentioned copper foil is a rolled copper foil, and is subjected to a heat treatment at 300 ° C for 30 minutes. The average crystal grain size after the treatment is 0.6 to 4.3 μm, the tensile strength is 230 to 287 MPa, and the skewness Rsk after the heat treatment is 0.05 or less.

本發明之包銅層板係積層上述可撓性印刷基板用銅箔與樹脂層而成。 The copper clad laminate of the present invention is formed by laminating the copper foil for a flexible printed circuit board and a resin layer.

本發明之可撓性印刷基板係使用上述包銅層板,於上述銅箔形成電路而成。 The flexible printed circuit board of the present invention is formed by forming a circuit on the copper foil using the copper clad laminate.

較佳為上述電路之L/S為35/35~10/10(μm/μm)。再者,電路之L/S(線與間隙)係構成電路之配線的寬度(L:線)與相鄰配線的間隔(S:間隙)之比。L採用電路中之L的最小值,S採用電路中之S的最小值。 The L / S of the above circuit is preferably 35/35 to 10/10 (μm / μm). In addition, the L / S (line and gap) of a circuit is a ratio of the width (L: line) of the wiring constituting the circuit to the interval (S: gap) of adjacent wiring. L uses the minimum value of L in the circuit, and S uses the minimum value of S in the circuit.

再者,L及S只要為10~35μm即可,無需兩者為同一值。例如,亦可取L/S=20.5/35、35/17等值。 In addition, L and S only need to be 10 to 35 μm, and they do not need to be the same value. For example, values such as L / S = 20.5 / 35, 35/17 can also be taken.

本發明之電子機器係使用上述可撓性印刷基板而成。 The electronic device of the present invention is formed using the flexible printed circuit board.

根據本發明,可獲得蝕刻性優異之可撓性印刷基板用銅箔。 According to the present invention, a copper foil for a flexible printed circuit board having excellent etching properties can be obtained.

以下,對本發明之銅箔的實施形態進行說明。再者,於本發明中,只要無特別說明,則%表示質量%。 Hereinafter, embodiments of the copper foil of the present invention will be described. In the present invention, unless otherwise specified,% means% by mass.

<組成> <Composition>

本發明之銅箔由99.0質量%以上之Cu、剩餘部分為不可避免之雜質構成。 The copper foil of the present invention is composed of 99.0% by mass or more of Cu, and the remainder is unavoidable impurities.

如上所述,於本發明中,藉由將銅箔之再結晶後的晶粒微細化,而提高強度,且提高蝕刻性。 As described above, in the present invention, by refining the crystal grains of the copper foil after recrystallization, the strength is improved and the etchability is improved.

但是,於上述之純銅系之組成的情形時,晶粒之微細化困難,故而於冷軋時之初期僅進行一次再結晶退火,之後不進行再結晶退火,以此藉由冷軋而大量地導入加工應變,使動態再結晶產生,從而可實現晶粒之微細化。 However, in the case of the pure copper-based composition described above, it is difficult to refine the crystal grains. Therefore, in the initial stage of cold rolling, recrystallization annealing is performed only once, and then recrystallization annealing is not performed, so that a large amount of cold rolling is performed. Introduce processing strain to generate dynamic recrystallization, so that the crystal grains can be refined.

又,為使冷軋中之加工應變增大,作為最終冷軋(反覆進行退火及壓延之步驟整體之中,最後之退火後所進行之最終壓延)中之加工度,較佳設為η=ln(最終冷軋前之板厚/最終冷軋後之板厚)=7.51~8.00。 In order to increase the processing strain during cold rolling, as the workability in the final cold rolling (overall the steps of annealing and rolling repeatedly, and the final rolling after the final annealing), it is preferable to set η = ln (sheet thickness before final cold rolling / sheet thickness after final cold rolling) = 7.51 ~ 8.00.

於η未達7.51之情形時,加工應變不會均勻地累積,即,應變局部地累積,故而蝕刻速度於累積有應變之部位與其他部位不同。因此,軟蝕刻後之Rsk的絕對值變大,蝕刻性變差。於η大於8.00之情形時,應變過量地累積而成為晶粒成長之驅動力,有晶粒變得粗大之傾向。進而較佳設為η=7.75~8.00。 When η is less than 7.51, the processing strain does not accumulate uniformly, that is, the strain accumulates locally, so the etching rate is different from other parts where the strain accumulates. Therefore, the absolute value of Rsk after soft etching becomes large, and the etchability deteriorates. When η is larger than 8.00, strain is excessively accumulated to become a driving force for grain growth, and the grain tends to become coarse. Further, it is preferably set to η = 7.75 to 8.00.

又,作為使晶粒微細化之添加元素,若相對於上述組成含有合計為0.003~0.825質量%之選自P、Ti、Sn、Ni、Be、Zn、In及Mg之群之1種以上的添加元素,則可更容易地實現晶粒之微細化。該等添加元素於冷軋時會使錯位密度增加,故而可更容易地實現晶粒之微細化。又,若於冷軋時之初期僅進行一次再結晶退火,之後不進行再結晶退火,則藉由冷軋大量地導入加工應變,使動態再結晶產生,從而可更確實地實現晶粒 之微細化。 In addition, as an additional element for miniaturizing crystal grains, if the total content of the above-mentioned composition is 0.003 to 0.825 mass%, one or more members selected from the group consisting of P, Ti, Sn, Ni, Be, Zn, In, and Mg Adding an element makes it easier to miniaturize the crystal grains. These additional elements increase the dislocation density during cold rolling, so that it is easier to refine the crystal grains. In addition, if recrystallization annealing is performed only once in the initial stage of cold rolling, and then recrystallization annealing is not performed, a large amount of processing strain is introduced by cold rolling to generate dynamic recrystallization, so that the crystal grains can be more reliably realized. Miniaturization.

存在如下情況:若上述添加元素之合計含量未達0.003質量%,則晶粒之微細化變得困難,若超過0.825質量%,則導電率降低。又,存在如下情況:再結晶溫度上升而與樹脂積層時不發生再結晶,強度變得過高而銅箔及CCL之彎折性變差。 When the total content of the above-mentioned added elements is less than 0.003% by mass, it becomes difficult to refine the crystal grains, and when it exceeds 0.825% by mass, the conductivity is reduced. In addition, there are cases where the recrystallization temperature increases without recrystallization when laminated with the resin, the strength becomes too high, and the bendability of the copper foil and CCL is deteriorated.

再者,作為將銅箔再結晶後之晶粒微細化之方法,除了加入添加元素之方法以外,亦可列舉:進行聚合壓延之方法、藉由電解銅箔進行電沈積時使用脈衝電流之方法、或藉由電解銅箔於電解液適量添加硫脲或動物膠等之方法。 In addition, as a method for refining the crystal grains of the copper foil after recrystallization, in addition to a method of adding an element, a method of performing polymerization and rolling, and a method of using a pulse current when performing electrodeposition by using electrolytic copper foil may also be cited. Or, by adding an appropriate amount of thiourea or animal glue to the electrolytic solution through electrolytic copper foil.

亦可將本發明之銅箔設為由符合JIS-H3100(C1100)規格之精銅(TPC)或JIS-H3100(C1011)之無氧銅(OFC)構成之組成。 The copper foil of the present invention may be composed of fine copper (TPC) conforming to JIS-H3100 (C1100) or oxygen-free copper (OFC) conforming to JIS-H3100 (C1011).

又,亦可設為使上述TPC或OFC含有上述添加元素而成之組成。 Moreover, it can also be set as the composition which made the said TPC or OFC contain the said addition element.

<平均結晶粒徑> <Average crystal grain size>

銅箔之平均結晶粒徑為0.6~4.3μm。若平均結晶粒徑未達0.6μm,則強度變得過高而抗撓剛度變大,回彈變大,從而不適合可撓性印刷基板用途。若平均結晶粒徑超過4.3μm,則無法實現晶粒之微細化,難以提高強度而使彎折性提高,並且軟蝕刻性、蝕刻因數或電路直線性變差而蝕刻性降低。 The average crystal grain size of the copper foil is 0.6 to 4.3 μm. If the average crystal grain size is less than 0.6 μm, the strength becomes too high, the flexural rigidity becomes large, and the springback becomes large, making it unsuitable for flexible printed circuit board applications. If the average crystal grain size exceeds 4.3 μm, it is impossible to achieve miniaturization of the crystal grains, it is difficult to increase the strength to improve the bendability, and the soft etchability, etching factor, or circuit linearity is deteriorated and the etchability is lowered.

關於平均結晶粒徑之測量,為了避免誤差,而以100μm×100μm之視野對箔表面進行3視野以上之觀察。關於箔表面之觀察,可使用SIM(Scanning Ion Microscope,掃描式離子顯微鏡)或SEM(Scanning Electron Microscope,掃描式電子顯微鏡),並基於JIS H 0501而求出平均結晶粒徑。 Regarding the measurement of the average crystal grain size, in order to avoid errors, the surface of the foil was observed with a field of view of 100 μm × 100 μm for 3 or more fields. For the observation of the foil surface, an average crystal grain size can be obtained based on JIS H 0501 using a scanning ion microscope (SIM) or a scanning electron microscope (SEM).

但是,雙晶係視為個別之晶粒而測量。 However, the twin crystal system is measured as individual crystal grains.

<拉伸強度(TS)> <Tensile strength (TS)>

銅箔之拉伸強度為230~287MPa。如上所述,藉由將晶粒微細化而拉伸強度提高。若拉伸強度未達230MPa,則提高強度變得困難。若拉伸強度超過287MPa,則強度變得過高而抗撓剛度變大,回彈變大,從而不適合可撓性印刷基板用途。 The tensile strength of copper foil is 230 ~ 287MPa. As described above, the fineness of the crystal grains improves the tensile strength. If the tensile strength is less than 230 MPa, it becomes difficult to improve the strength. When the tensile strength exceeds 287 MPa, the strength becomes too high, the flexural rigidity becomes large, and the springback becomes large, making it unsuitable for flexible printed circuit board applications.

拉伸強度係藉由依據IPC-TM650之拉伸試驗,以試片寬度12.7mm、室溫(15~35℃)、拉伸速度50.8mm/min、量規長度50mm,於平行於銅箔之壓延方向(或MD方向)之方向進行拉伸試驗而得。 The tensile strength is based on the tensile test according to IPC-TM650, with a test piece width of 12.7mm, room temperature (15 ~ 35 ° C), a tensile speed of 50.8mm / min, and a gauge length of 50mm. It is obtained by performing a tensile test in the rolling direction (or MD direction).

<偏斜度Rsk> <Skew Rsk>

作為評價軟蝕刻性之指標,規定蝕刻後之銅箔表面基於JIS B 0601-2001之偏斜度Rsk。作為蝕刻條件,模擬用以賦予銅箔與光阻劑之密接性的軟蝕刻,將銅箔浸漬於過硫酸鈉濃度100g/L、過氧化氫濃度35g/L之水溶液(液體溫度25℃)420秒。 As an index for evaluating soft etchability, the copper foil surface after etching is specified based on the skewness Rsk of JIS B 0601-2001. As the etching conditions, the soft etching to simulate the adhesion between the copper foil and the photoresist was simulated, and the copper foil was immersed in an aqueous solution (liquid temperature 25 ° C) 420 of 100 g / L sodium sulfate concentration and 35 g / L hydrogen peroxide concentration. second.

偏斜度Rsk係表示藉由均方根高度Rq之立方而無因次化之基準長度下之Z(x)立方平均。 Skewness Rsk is a mean of the Z (x) cube at the base length without the dimensionization by the cube of the root mean square height Rq.

均方根高度Rq係表示依據JIS B 0601(2001)之利用非接觸式粗糙度計所進行之表面粗糙度測量下之凹凸程度之指標,用下述(A)式表示,係表面粗糙度之Z軸方向的凹凸(山之)高度,係於基準長度lr之山的高度Z(x)之均方根。 The root-mean-square height Rq is an index indicating the degree of unevenness in the surface roughness measurement using a non-contact roughness meter in accordance with JIS B 0601 (2001), and is expressed by the following formula (A), which is the surface roughness The height of the unevenness (the height of the mountain) in the Z axis direction is the root mean square of the height Z (x) of the mountain with the reference length lr.

於基準長度lr之山的高度之均方根高度Rq: Root mean square height Rq of the height of the mountain of reference length lr:

偏斜度Rsk係使用均方根高度Rq,用以下之(B)式表示。 The skewness Rsk is expressed by the following formula (B) using the root mean square height Rq.

銅箔表面之偏斜度Rsk係表示將銅箔表面之凹凸面的平均面作為中心時之銅箔表面之凹凸的對稱性之指標。因此,Rsk之絕對值越接近0,凹凸之山與谷越對稱,剝離強度(依據IPC-TM-650之剝離強度(接著強度))變得越高而越好地與樹脂接著,故而軟蝕刻性越優異。又,可以說,若Rsk<0,則高度分佈相對於平均面偏向上側,若Rsk>0,則高度分佈相對於平均面偏向下側。向上側之偏斜度較大時,銅箔表面會成為凸形態,故而銅箔內部之漫反射會變大,於將光阻劑貼附於銅箔之後進行曝光而蝕刻去除之情形時,電路直線性或蝕刻因數之精度變差。向下側之偏斜度較大時,銅箔表面會成為凹形態,若自光源照射光,則銅箔表面之漫反射會變大,於將光阻劑貼附於銅箔之後進行曝光而蝕刻去除之情形時,電路直線性或蝕刻因數之精度變差。又,Rsk之絕對值越接近0,凹凸之山與谷越對稱,故而不會於高度方向產生電磁力線之混亂,因此高頻傳輸特性越好。 The skewness Rsk of the copper foil surface is an index showing the symmetry of the roughness of the copper foil surface when the average surface of the uneven surface of the copper foil surface is used as the center. Therefore, the closer the absolute value of Rsk is to 0, the more symmetrical the hills and valleys of unevenness, and the higher the peel strength (peel strength (adhesion strength) according to IPC-TM-650) becomes, the better it adheres to the resin, so soft etching The better the sex. In addition, it can be said that if Rsk <0, the height distribution is on the upper side relative to the average surface, and if Rsk> 0, the height distribution is on the lower side relative to the average surface. When the upward deflection is large, the surface of the copper foil will become convex, so the diffuse reflection inside the copper foil will become larger. When a photoresist is attached to the copper foil and exposed and etched away, the circuit The accuracy of linearity or etching factor deteriorates. When the downward deflection is large, the surface of the copper foil will become concave. If light is irradiated from the light source, the diffuse reflection on the surface of the copper foil will increase. After the photoresist is attached to the copper foil and exposed, In the case of etching removal, the linearity of the circuit or the accuracy of the etching factor is deteriorated. In addition, the closer the absolute value of Rsk is to 0, the more symmetrical the hills and valleys of the concave and convex, so that the electromagnetic force lines will not be disturbed in the height direction, so the better the high-frequency transmission characteristics.

就此種方面而言,本發明之銅箔係於MD方向及CD方向分別對偏斜度Rsk進行16次測量,採用將各次測量值的絕對值平均而得之值作為Rsk。 In this regard, the copper foil of the present invention measures the skewness Rsk 16 times in the MD direction and the CD direction, respectively, and uses the value obtained by averaging the absolute values of the measured values as Rsk.

關於MD(Machine Direction,縱向)方向,於壓延銅箔之情形時為壓延 平行方向,於電解銅箔之情形時為製造時之帶材之行進方向。關於CD(Cross Machine Direction,橫向)方向,於壓延銅箔之情形時為壓延直角方向,於電解銅箔之情形時為垂直於行進方向之方向。 Regarding MD (Machine Direction) direction, when rolling copper foil, it is rolled. In the parallel direction, in the case of electrolytic copper foil, it is the direction of travel of the strip during manufacture. The CD (Cross Machine Direction) direction is a right-angle direction in the case of rolling a copper foil, and a direction perpendicular to the direction of travel in the case of an electrolytic copper foil.

實際之銅箔係於MD方向及CD方向被切下而用於CCL,故而對MD方向及CD方向之Rsk進行測量。 The actual copper foil is cut in the MD and CD directions for CCL, so Rsk in the MD and CD directions is measured.

藉由將銅箔表面之Rsk之絕對值規定為0.05以下,剝離強度提高,而其與樹脂之密接性優異,且利用光阻劑將銅箔蝕刻去除之後的電路之直線性或蝕刻因數的精度提高,故而軟蝕刻性提高。 By setting the absolute value of Rsk on the surface of the copper foil to 0.05 or less, the peel strength is improved, and its adhesion to the resin is excellent, and the linearity of the circuit or the accuracy of the etching factor after the copper foil is etched and removed using a photoresist As a result, the soft etchability is improved.

若Rsk之絕對值超過0.050,則其與樹脂之密接性提高,但表面之凹凸變得顯著而利用光阻劑將銅箔蝕刻去除之後的電路之直線性的精度降低,從而軟蝕刻性較差。 If the absolute value of Rsk exceeds 0.050, the adhesion with the resin will be improved, but the unevenness on the surface will become significant, and the accuracy of the linearity of the circuit after the copper foil is etched and removed by the photoresist will be reduced, resulting in poor soft etching.

Rsk之絕對值的下限並無特別限定,通常為0.001。將Rsk之絕對值設為未達0.001於工業上較困難。 The lower limit of the absolute value of Rsk is not particularly limited, and is usually 0.001. It is industrially difficult to set the absolute value of Rsk to less than 0.001.

<300℃ 30分鐘之熱處理> <300 ° C for 30 minutes heat treatment>

於300℃對銅箔進行30分鐘之熱處理後之平均結晶粒徑可為0.6~4.3μm,MD方向之拉伸強度可為230~287MPa,且該熱處理後之偏斜度Rsk可為0.05以下。 After the copper foil is heat-treated at 300 ° C. for 30 minutes, the average crystal grain size can be 0.6 to 4.3 μm, the tensile strength in the MD direction can be 230 to 287 MPa, and the skewness Rsk after the heat treatment can be 0.05 or less.

本發明之銅箔用於可撓性印刷基板,此時,將由銅箔與樹脂積層所得之CCL於200~400℃進行用以使樹脂硬化之熱處理,故而存在因再結晶而晶粒粗大化之可能性。 The copper foil of the present invention is used for a flexible printed circuit board. At this time, the CCL obtained by laminating the copper foil and the resin is subjected to a heat treatment for hardening the resin at 200 to 400 ° C. Therefore, there is a problem that the grains are coarsened due to recrystallization possibility.

又,將由銅箔與樹脂積層所得之CCL於200~400℃進行用以使樹脂硬化之熱處理。即,實際之軟蝕刻係對進行了該熱處理之銅箔進行。 The CCL obtained by laminating the copper foil and the resin is subjected to a heat treatment for curing the resin at 200 to 400 ° C. That is, the actual soft etching is performed on the copper foil subjected to the heat treatment.

因此,於與樹脂積層之前後,銅箔之平均結晶粒徑及拉伸強度發生了變化。因此,本案之請求項1之可撓性印刷基板用銅箔規定了成為與樹脂積層後之包銅層板後的已接受樹脂之硬化熱處理之狀態的銅箔。 Therefore, before and after lamination with the resin, the average crystal grain size and tensile strength of the copper foil changed. Therefore, the copper foil for a flexible printed circuit board of claim 1 of the present case specifies a copper foil that has been cured and heat-treated with a resin after being laminated with a resin to a copper-clad laminate.

另一方面,本案之請求項4之可撓性印刷基板用銅箔規定了已對與樹脂積層前之銅箔進行上述熱處理時之狀態。該300℃ 30分鐘之熱處理模擬了CCL之積層時使樹脂硬化熱處理之溫度條件。 On the other hand, the copper foil for flexible printed circuit board of claim 4 of the present case specifies the state when the above-mentioned heat treatment has been performed on the copper foil before being laminated with the resin. The heat treatment at 300 ° C. for 30 minutes simulates the temperature conditions for curing heat treatment of the resin when the CCL is laminated.

再者,熱處理之環境並無特別限定,可為大氣下,亦可為Ar、氮氣等非活性氣體環境。 In addition, the environment for the heat treatment is not particularly limited, and it may be in the atmosphere or an inert gas environment such as Ar or nitrogen.

本發明之銅箔例如可如下所示般製造。首先,於銅錠中添加上述添加物並進行熔解、鑄造之後,進行熱軋、冷軋及退火,並進行上述之最終冷軋,藉此可製造箔。 The copper foil of this invention can be manufactured as follows, for example. First, a foil can be manufactured by adding the above-mentioned additives to a copper ingot, melting and casting, and then performing hot rolling, cold rolling, and annealing, and performing the final cold rolling described above.

<包銅層板及可撓性印刷基板> <Copper-clad laminate and flexible printed circuit board>

又,對於本發明之銅箔,(1)澆鑄樹脂前驅物(例如,被稱為清漆之聚醯亞胺前驅物)並加熱而使其等聚合,(2)使用與基礎膜為相同種類之熱塑性接著劑,將基礎膜層壓於本發明之銅箔,藉此獲得由銅箔及樹脂基材之2層構成的包銅層板(CCL)。又,將塗佈有接著劑之基礎膜層壓於本發明之銅箔,藉此獲得由銅箔、樹脂基材、及其間之接著層之3層構成的包銅層板(CCL)。製造該等CCL時,銅箔經熱處理而再結晶化。 In addition, for the copper foil of the present invention, (1) a resin precursor (for example, a polyimide precursor called varnish) is cast and heated to polymerize it, and (2) the same type as the base film is used A thermoplastic adhesive is used to laminate a base film to the copper foil of the present invention, thereby obtaining a copper clad laminate (CCL) composed of two layers of a copper foil and a resin substrate. Further, a base film coated with an adhesive was laminated on the copper foil of the present invention, thereby obtaining a copper clad laminate (CCL) composed of three layers of a copper foil, a resin substrate, and an adhesive layer therebetween. When these CCLs are produced, the copper foil is recrystallized by heat treatment.

對該等使用光蝕刻法(photolithography)技術而形成電路,並視需要對電路實施鍍覆,將覆蓋層膜層壓,藉此獲得可撓性印刷基板(可撓性配線板)。 A circuit is formed by using the photolithography technique, and the circuit is plated as necessary, and a cover film is laminated to obtain a flexible printed circuit board (flexible wiring board).

因此,本發明之包銅層板係積層銅箔與樹脂層而成。又,本 發明之可撓性印刷基板係於包銅層板之銅箔形成電路而成。 Therefore, the copper clad laminate of the present invention is formed by laminating a copper foil and a resin layer. Again, this The flexible printed circuit board of the invention is formed by forming a circuit on a copper foil of a copper clad laminate.

作為樹脂層,可列舉:PET(聚對酞酸乙二酯)、PI(聚醯亞胺)、LCP(液晶聚合物)、PEN(聚萘二甲酸乙二酯),但並不限定於此。又,作為樹脂層,亦可使用該等之樹脂膜。 Examples of the resin layer include, but are not limited to, PET (polyethylene terephthalate), PI (polyimide), LCP (liquid crystal polymer), and PEN (polyethylene naphthalate). . As the resin layer, such a resin film may be used.

作為樹脂層與銅箔之積層方法,可於銅箔之表面塗佈成為樹脂層之材料並進行加熱成膜。又,亦可使用樹脂膜作為樹脂層,於樹脂膜與銅箔之間使用以下之接著劑,亦可不使用接著劑而將樹脂膜熱壓接於銅箔。但是,就不添加多餘之熱至樹脂膜之方面而言,較佳使用接著劑。 As a method of laminating a resin layer and a copper foil, the surface of the copper foil can be coated with a material that becomes a resin layer and heated to form a film. Further, a resin film may be used as the resin layer, and the following adhesive may be used between the resin film and the copper foil, or the resin film may be thermally compression-bonded to the copper foil without using an adhesive. However, it is preferable to use an adhesive in terms of not adding unnecessary heat to the resin film.

於使用膜作為樹脂層之情形時,將該膜經由接著劑層而積層於銅箔即可。於此情形時,較佳使用與膜為相同成分之接著劑。例如,於使用聚醯亞胺膜作為樹脂層之情形時,接著劑層較佳亦使用聚醯亞胺系接著劑。再者,此處所言之聚醯亞胺接著劑係指包含醯亞胺鍵之接著劑,亦包含聚醚醯亞胺等。 When a film is used as the resin layer, the film may be laminated on a copper foil via an adhesive layer. In this case, it is preferable to use an adhesive having the same composition as the film. For example, when a polyimide film is used as the resin layer, it is preferable to use a polyimide-based adhesive for the adhesive layer. In addition, the polyfluorene imine adhesive mentioned here refers to the adhesive containing a fluorene imine bond, and also includes polyether fluorene imine and the like.

再者,本發明並不限定於上述實施形態。又,只要取得本發明之作用效果,則上述實施形態中之銅合金亦可含有其他成分。 The present invention is not limited to the embodiments described above. Moreover, as long as the effect of this invention is acquired, the copper alloy in the said embodiment may contain other components.

例如,亦可對銅箔之表面實施粗化處理、防銹處理、耐熱處理、或其等之組合的表面處理。 For example, the surface of the copper foil may be subjected to a surface treatment of roughening treatment, rust prevention treatment, heat treatment, or a combination thereof.

[實施例] [Example]

其次,列舉實施例,而對本發明進一步詳細地進行說明,但本發明並不限定於該等實施例。於純度99.9%以上之電解銅中分別添加表1所示之元素,並於Ar環境下進行鑄造而獲得鑄塊。鑄塊中之氧含量未達15ppm。於900℃對該鑄塊進行均質化退火之後,進行熱軋及冷軋而使厚度為 31~51mm後,進行1次退火,然後對表面進行面削,並以表1所示之加工度η進行最終冷軋,而獲得最終厚度17μm之銅箔樣品。 Next, the present invention will be described in more detail with examples, but the present invention is not limited to these examples. Elements shown in Table 1 were added to electrolytic copper having a purity of 99.9% or more, and casting was performed in an Ar environment to obtain an ingot. The oxygen content in the ingot did not reach 15 ppm. This ingot was homogenized and annealed at 900 ° C, and then hot-rolled and cold-rolled to a thickness of After 31 to 51 mm, annealing was performed once, and then the surface was surface-cut, and finally cold-rolled at the processing degree η shown in Table 1, to obtain a copper foil sample with a final thickness of 17 μm.

<A.銅箔樣品之評價> <A. Evaluation of copper foil samples>

1.導電率 Electrical conductivity

對於上述各銅箔樣品,於大氣下,於300℃進行30分鐘之熱處理(模擬CCL之積層時使樹脂硬化熱處理之溫度條件)之後,基於JIS H 0505,藉由四端子法而對25℃之導電率(%IACS)進行測量。 For each of the above copper foil samples, heat treatment was performed at 300 ° C for 30 minutes in the air (simulating the temperature conditions for the resin to harden and heat-treat when CCL is laminated), and then based on JIS H 0505, the 25 ° C Conductivity (% IACS) was measured.

若導電率為75%IACS以上,則導電性良好。 When the conductivity is 75% IACS or more, the conductivity is good.

2.粒徑 2.Particle size

使用SEM(Scanning Electron Microscope,掃描式電子顯微鏡)對上述熱處理後之各銅箔樣品表面進行觀察,並基於JIS H 0501求出平均粒徑。但是,雙晶係視為個別之晶粒而進行測量。測量區域設為表面之100μm×100μm。 The surface of each copper foil sample after the heat treatment was observed using a SEM (Scanning Electron Microscope), and the average particle diameter was determined based on JIS H 0501. However, the twin crystal system is measured as individual crystal grains. The measurement area was set to 100 μm × 100 μm on the surface.

3.銅箔之拉伸強度 3. Tensile strength of copper foil

對於上述熱處理後之各銅箔樣品,藉由依據IPC-TM650之拉伸試驗,於上述條件對拉伸強度進行測量。 For each copper foil sample after the above heat treatment, the tensile strength was measured under the above conditions by a tensile test according to IPC-TM650.

<B.CCL之評價> <Evaluation of B.CCL>

4.CCL(覆銅積層板)之製作 4.CCL (copper clad laminate) production

最終冷軋之後,對未進行上述熱處理之銅箔樣品(熱處理前之銅箔)之單面進行銅粗化鍍覆。作為銅粗化鍍覆浴,使用Cu:10-25g/L、硫酸:20-100g/L之組成,於浴溫20-40℃、電流密度30-70A/dm2下進行1-5秒電鍍,而使銅附著量為20g/dm2After the final cold rolling, copper roughening plating was performed on one side of a copper foil sample (copper foil before heat treatment) that had not been subjected to the above-mentioned heat treatment. As a copper roughening plating bath, a composition of Cu: 10-25 g / L and sulfuric acid: 20-100 g / L is used, and plating is performed for 1-5 seconds at a bath temperature of 20-40 ° C and a current density of 30-70A / dm 2 , So that the copper adhesion amount is 20g / dm 2 .

將銅箔樣品之粗化鍍覆面分別積層於兩面附接著劑之聚醯亞胺膜(宇部興產股份有限公司製造之製品名「Upilex VT」,厚度25μm)之各接著面,並利用加熱壓製(4MPa)施加300℃×30分鐘之熱處理進行貼合,而獲得於聚醯亞胺膜之兩面分別積層有銅箔之CCL樣品。 The roughened plated surfaces of the copper foil samples were laminated on each side of the polyimide film (product name "Upilex VT" manufactured by Ube Kosan Co., Ltd., thickness 25 μm) with adhesive on both sides, and pressed by heating. (4 MPa) A heat treatment was performed at 300 ° C. for 30 minutes for bonding, and CCL samples were obtained in which copper foil was laminated on both sides of the polyimide film.

5.偏斜度Rsk 5. Skew Rsk

將上述CCL浸漬於過硫酸鈉濃度100g/L、過氧化氫濃度35g/L之水溶液(液體溫度25℃)420秒而進行軟蝕刻。分別於壓延平行方向及壓延直角方向改變測量部位,對軟蝕刻後之銅箔表面基於JIS B 0601-2001之偏斜度Rsk進行16次(合計32次)測量,並求出將各次測量值的絕對值平均而得之值。 The CCL was immersed in an aqueous solution (liquid temperature 25 ° C.) at a concentration of 100 g / L of sodium persulfate and 35 g / L of hydrogen peroxide for 420 seconds to perform soft etching. The measurement locations were changed in the rolling parallel direction and the rolling right angle direction. The soft-etched copper foil surface was measured 16 times (total 32 times) based on the skewness Rsk of JIS B 0601-2001, and the measured values were obtained. The absolute value of is the average value.

6.蝕刻性 6. Etching

於上述CCL樣品之銅箔部分形成L/S(線/間隙)=35/35μm、35/35μm、25/25μm、20/20μm、及10/10μm之短條狀之電路。作為比較,與市售之壓延銅箔(精銅箔,厚度17μm)同樣地形成電路。然後,利用顯微鏡目視判定蝕刻因數(電路之(蝕刻深度/上下之平均蝕刻寬度)所示之比)、及電路之直線性,並根據以下之基準進行評價。若評價為○,則良好。 A short strip-shaped circuit with L / S (line / gap) = 35/35 μm, 35/35 μm, 25/25 μm, 20/20 μm, and 10/10 μm was formed on the copper foil portion of the CCL sample. For comparison, a circuit was formed in the same manner as a commercially available rolled copper foil (fine copper foil, thickness: 17 μm). Then, the etching factor (the ratio shown by the (etching depth / average etching width above and below) of the circuit) and the linearity of the circuit were visually determined using a microscope, and evaluated based on the following criteria. An evaluation of ○ is good.

○:與市售之壓延銅箔相比,蝕刻因數及電路之直線性良好 ○: Compared with commercially available rolled copper foil, the etching factor and the linearity of the circuit are good

△:與市售之壓延銅箔相比,蝕刻因數及電路之直線性同等 △: Compared with commercially available rolled copper foil, the etching factor and the linearity of the circuit are the same

×:與市售之壓延銅箔相比,蝕刻因數及電路之直線性較差 ×: Compared with commercially available rolled copper foil, the etching factor and the linearity of the circuit are poor.

7.高頻傳輸特性 7. High-frequency transmission characteristics

於上述CCL之單面之銅箔部分蝕刻形成阻抗50Ω、長度100mm之微帶線,而作為實施例。再者,CCL之相反側之銅箔不進行蝕刻,而成為GND。 A microstrip line with an impedance of 50Ω and a length of 100mm was etched on the copper foil portion of one side of the above-mentioned CCL as an example. In addition, the copper foil on the opposite side of CCL is not etched and becomes GND.

作為比較例,由市售之壓延銅箔(精銅箔,厚度17μm)同樣地製作CCL,於CCL之單側之銅箔部分形成上述微帶線。 As a comparative example, CCL was produced in the same manner from a commercially available rolled copper foil (fine copper foil, thickness: 17 μm), and the microstrip line was formed on a copper foil portion on one side of the CCL.

然後,使用網路分析儀,以60GHz對作為微帶線之S參數(Scattering Parameter,散射參數)之S21進行測量。S21係使用入射至埠口1之信號A、及傳輸至埠口2之信號B,用以下之(C)式表示。 Then, using a network analyzer, S21 was measured as the S-parameter (Scattering Parameter) of the microstrip line at 60 GHz. S21 uses signal A which is incident on port 1 and signal B which is transmitted to port 2, which is expressed by the following formula (C).

S 21 [dB]=10log 10 (B/A) (C) S 21 [dB] = 10log 10 (B / A) (C)

顯示出:S21之絕對值越小(S21一定為負),傳輸損失越小,傳輸特性越優異。因此,根據以下之基準而對電路之傳輸特性(傳輸損失)進行評價。若評價為○,則傳輸特性優異。 It is shown that the smaller the absolute value of S21 (S21 must be negative), the smaller the transmission loss, and the better the transmission characteristics. Therefore, the transmission characteristics (transmission loss) of the circuit were evaluated based on the following criteria. When the evaluation is ○, the transmission characteristics are excellent.

○:{(市售壓延銅箔的S21之絕對值)-(實施例的S21之絕對值)}≧5dB/mm以上 ○: {(absolute value of S21 of commercially available rolled copper foil)-(absolute value of S21 of the embodiment) ≧ 5dB / mm or more

△:5dB/mm>{(市售壓延銅箔的S21之絕對值)-(實施例的S21之絕對值)}>-5dB/mm △: 5dB / mm> {(absolute value of S21 of commercially available rolled copper foil)-(absolute value of S21 of the embodiment)}>-5dB / mm

×:-5dB/mm≧{(市售壓延銅箔的S21之絕對值)-(實施例的S21之絕對值)} ×: -5dB / mm ≧ {(absolute value of S21 of commercially available rolled copper foil)-(absolute value of S21 of the example)}

將所獲得之結果示於表1中。 The obtained results are shown in Table 1.

如由表1可明確般,於銅箔之平均結晶粒徑為0.6~4.3μm、且拉伸強度為230~287Mpa、偏斜度Rsk之絕對值為0.05以下之各實施例之情形時,包含軟蝕刻性之蝕刻性優異,高頻傳輸特性亦優異。再者,實施例1係於最終冷軋之最後的1個行程進行聚合壓延。 As is clear from Table 1, when the average crystal grain diameter of the copper foil is 0.6 to 4.3 μm, the tensile strength is 230 to 287 Mpa, and the absolute value of the skewness Rsk is less than or equal to 0.05, each case includes The soft etchability is excellent in etching properties, and the high-frequency transmission characteristics are also excellent. In addition, in Example 1, polymerization and rolling were performed on the last stroke of the final cold rolling.

另一方面,於最終冷軋之加工度η未達7.51的比較例1、3之情形時,銅箔之平均結晶粒徑超過4.3μm而粗大化,拉伸強度成為未達230MPa,偏斜度Rsk之絕對值變得大於0.05。其結果為,包含軟蝕刻性之蝕刻性較差,高頻傳輸特性亦較差。 On the other hand, in the case of Comparative Examples 1 and 3 in which the final cold-rolled workability η did not reach 7.51, the average crystal grain diameter of the copper foil exceeded 4.3 μm and coarsened, and the tensile strength became less than 230 MPa, and the skewness The absolute value of Rsk becomes greater than 0.05. As a result, etchability including soft etchability is poor, and high-frequency transmission characteristics are also poor.

又,於最終冷軋之加工度η雖未達7.51但為3.5以上之比較例4之情形時,偏斜度Rsk大於0.05,包含軟蝕刻性之蝕刻性較差,高頻傳輸特性亦較差。 Moreover, in the case of Comparative Example 4 in which the final cold-rolled workability η is less than 7.51 but is 3.5 or more, the skewness Rsk is greater than 0.05, the etchability including soft etchability is poor, and the high-frequency transmission characteristics are also poor.

但是,於比較例4之情形時,銅箔之平均結晶粒徑為4.3μm以下,拉伸強度亦成為230MPa以上。認為其理由如下所述。即,於η未達3.5之比較例1、3之情形時,最終冷軋加工時之應變之累積較小,再晶粒之核變少,故而再晶粒變得粗大。另一方面,於η為3.5以上之比較例4之情形時,雖最終冷軋加工時應變適度地累積,再晶粒變得微細,但應變局部地存在,故而Rsk變大。並且,認為,若η為7.51以上,則累積之應變量進一步變多,應變均勻地存在,故而Rsk變小。 However, in the case of Comparative Example 4, the average crystal grain size of the copper foil was 4.3 μm or less, and the tensile strength was also 230 MPa or more. The reason is considered as follows. That is, in the case of Comparative Examples 1 and 3 in which η is less than 3.5, the accumulation of strain during final cold rolling is small, and the cores of the recrystal grains are reduced, so that the recrystal grains become coarse. On the other hand, in the case of Comparative Example 4 in which η is 3.5 or more, although the strain accumulates moderately during the final cold rolling process and the recrystal grains become fine, the strain locally exists, so Rsk becomes large. In addition, it is considered that if η is 7.51 or more, the accumulated strain amount further increases and the strain exists uniformly, so that Rsk becomes small.

又,於最終冷軋下之加工度η大於8.00之比較例5之情形時,銅箔之平均結晶粒徑亦超過4.3μm而粗大化,拉伸強度亦未達230MPa,偏斜度Rsk之絕對值亦變得大於0.05。其結果為,包含軟蝕刻性之蝕刻性較差,高頻傳輸特性亦較差。 In the case of Comparative Example 5 where the final cold rolling process degree η is greater than 8.00, the average crystal grain size of the copper foil is also larger than 4.3 μm and coarsened, and the tensile strength does not reach 230 MPa. The absolute deviation of the skewness Rsk The value also becomes greater than 0.05. As a result, etchability including soft etchability is poor, and high-frequency transmission characteristics are also poor.

於添加元素之合計含量超過上限值之比較例2之情形時,導電率較差。 When the total content of the added elements exceeds the upper limit of Comparative Example 2, the conductivity is poor.

Claims (9)

一種可撓性印刷基板用銅箔,由99.0質量%以上之Cu、剩餘部分為不可避免之雜質構成,平均結晶粒徑為0.6~4.3μm,且MD方向之拉伸強度為230~287MPa,於MD方向及CD方向分別對浸漬於過硫酸鈉濃度100g/L、過氧化氫濃度35g/L之水溶液(液體溫度25℃)420秒後之表面基於JIS B 0601-2001之偏斜度Rsk進行16次測量,將各次測量值的絕對值平均而得之值為0.05以下。A copper foil for a flexible printed circuit board is composed of 99.0% by mass of Cu, and the remaining portion is unavoidable impurities. The average crystal grain size is 0.6 to 4.3 μm, and the tensile strength in the MD direction is 230 to 287 MPa. The MD and CD directions were immersed in an aqueous solution (liquid temperature 25 ° C) at a concentration of 100 g / L of sodium persulfate and 35 g / L of hydrogen peroxide for 420 seconds. For each measurement, the absolute value of each measurement value is averaged to obtain a value of 0.05 or less. 如申請專利範圍第1項之可撓性印刷基板用銅箔,其係由符合JIS-H3100(C1100)規格之精銅或JIS-H3100(C1011)之無氧銅構成。For example, the copper foil for flexible printed circuit boards in the scope of application for patent No. 1 is composed of fine copper in accordance with JIS-H3100 (C1100) or oxygen-free copper in JIS-H3100 (C1011). 如申請專利範圍第1或2項之可撓性印刷基板用銅箔,其進而含有合計為0.003~0.825質量%之選自P、Ti、Sn、Ni、Be、Zn、In及Mg之群之1種以上的添加元素而成。For example, the copper foil for a flexible printed circuit board in the scope of patent application No. 1 or 2 further contains 0.003 to 0.825 mass% of a group selected from the group consisting of P, Ti, Sn, Ni, Be, Zn, In, and Mg. One or more types of added elements. 如申請專利範圍第1至2項中任一項之可撓性印刷基板用銅箔,其中,該銅箔為壓延銅箔,於300℃進行30分鐘之熱處理後之該平均結晶粒徑為0.6~4.3μm,該拉伸強度為230~287MPa,且該熱處理後之該偏斜度Rsk為0.05以下。For example, the copper foil for flexible printed substrates according to any one of claims 1 to 2, wherein the copper foil is a rolled copper foil, and the average crystal grain size is 0.6 after heat treatment at 300 ° C for 30 minutes. ~ 4.3 μm, the tensile strength is 230 to 287 MPa, and the skewness Rsk after the heat treatment is 0.05 or less. 如申請專利範圍第3項之可撓性印刷基板用銅箔,其中,該銅箔為壓延銅箔,於300℃進行30分鐘之熱處理後之該平均結晶粒徑為0.6~4.3μm,該拉伸強度為230~287MPa,且該熱處理後之該偏斜度Rsk為0.05以下。For example, the copper foil for flexible printed substrates in the scope of patent application No. 3, wherein the copper foil is a rolled copper foil, and the average crystal grain size is 0.6 to 4.3 μm after heat treatment at 300 ° C for 30 minutes. The tensile strength is 230 to 287 MPa, and the skewness Rsk after the heat treatment is 0.05 or less. 一種包銅層板,積層申請專利範圍第1至5項中任一項之可撓性印刷基板用銅箔與樹脂層而成。A copper clad laminate is formed by laminating a copper foil and a resin layer for a flexible printed circuit board according to any one of claims 1 to 5. 一種可撓性印刷基板,使用申請專利範圍第6項之包銅層板,於該銅箔形成電路而成。A flexible printed circuit board is formed by using a copper-clad laminate with the scope of patent application No. 6 to form a circuit on the copper foil. 如申請專利範圍第7項之可撓性印刷基板,其中,該電路之L/S為35/35~10/10(μm/μm)。For example, the flexible printed circuit board of the seventh scope of the patent application, in which the L / S of the circuit is 35/35 ~ 10/10 (μm / μm). 一種電子機器,使用有申請專利範圍第7或8項之可撓性印刷基板。An electronic device using a flexible printed circuit board having the scope of patent application No. 7 or 8.
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KR20170113104A (en) 2017-10-12
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