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TWI635650B - Filter structure - Google Patents

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Publication number
TWI635650B
TWI635650B TW105132981A TW105132981A TWI635650B TW I635650 B TWI635650 B TW I635650B TW 105132981 A TW105132981 A TW 105132981A TW 105132981 A TW105132981 A TW 105132981A TW I635650 B TWI635650 B TW I635650B
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Taiwan
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resonant
disposed
metal layer
metal
layer
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TW105132981A
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Chinese (zh)
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TW201814954A (en
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周信輝
陳勁豪
鍾岳澂
林宜靜
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太盟光電科技股份有限公司
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Abstract

一種濾波器結構改良,包括:一基體、複數個共振金屬層、一接地金屬層、一金屬圖案層、一輸入電極及一輸出電極。該基體具有複數個共振孔,該些共振孔一端位於基體的開放面,另一端位於短路面上。該些共振金屬層設於該些共振孔中。該接地金屬層設於基體的短路面、頂面、底面及二側面上,與該些共振金屬層電性連結形成短路端;該輸入電極及該輸出電極設於基體底面或開放面上不與接地金屬層電性連結。該金屬圖案層與該些共振金屬層及該接地金屬層之間形成相互耦合濾波器電氣特性,以調整該共振金屬層之長度及該金屬圖案層達到所需的使用頻段。 A filter structure improvement comprises: a substrate, a plurality of resonant metal layers, a grounded metal layer, a metal pattern layer, an input electrode and an output electrode. The substrate has a plurality of resonant holes, one end of which is located on an open side of the base body and the other end is located on the short-circuited surface. The resonant metal layers are disposed in the resonant holes. The grounding metal layer is disposed on the short-circuited surface, the top surface, the bottom surface and the two side surfaces of the base body, and electrically connected to the resonant metal layers to form a short-circuited end; the input electrode and the output electrode are disposed on the bottom surface or the open surface of the base body The grounded metal layer is electrically connected. The metal pattern layer and the resonant metal layer and the ground metal layer form a mutual coupling filter electrical characteristic to adjust the length of the resonant metal layer and the metal pattern layer to achieve a desired use frequency band.

Description

濾波器結構改良 Filter structure improvement

本發明係關於一種濾波器,尤指一種具有改變頻率響應的表面黏著的濾波器結構改良。 The present invention relates to a filter, and more particularly to a filter structure improvement having a surface adhesion that changes the frequency response.

已知,表面黏著的濾波器已廣泛的被使用在集波器(LNB)、衛星導航系統(GPS)及WIFI系統上。而濾波器運用在這些無線通訊系統上,是將無線通訊系統所接收的信號裡所夾帶的雜訊濾除,以確保通訊系統訊號傳送及接收的品質。 Surface-adhesive filters are known to be widely used in wave concentrators (LNBs), satellite navigation systems (GPS), and WIFI systems. The filter is used in these wireless communication systems to filter out the noise contained in the signal received by the wireless communication system to ensure the quality of the communication system signal transmission and reception.

目前的所使用的濾波器具有一載體,其上具有複數個貫穿該載體的共振孔,該些共振孔的一端位於開放面上,另一端為於該短路面上,於該載體的短路面、頂面、底面及二側面上覆蓋有外導電層以形成該濾波器的接地。另,於該些共振孔中塗佈有內導電層形成共振器,以該些內導電層與該外導電層電性連結形成短路端,而位於該開放面的共振孔形成開放端。再,於該底面製作有一輸入焊墊及一輸出焊墊,該輸入焊電及該輸出焊墊與該外導電層之間形成有一間隙,在濾波器焊接於電路板上時,該輸入焊墊與輸出焊墊提供訊號輸入及輸出,而底面的外導電層與該電路板接地接在一起。 The current filter has a carrier having a plurality of resonant holes extending through the carrier, one end of the resonant holes being on the open surface, and the other end being on the short-circuited surface, on the short-circuited surface and the top of the carrier The face, the bottom surface and the two sides are covered with an outer conductive layer to form the ground of the filter. In addition, the inner conductive layer is formed in the resonant holes to form a resonator, and the inner conductive layer and the outer conductive layer are electrically connected to form a short-circuit end, and the resonant hole located on the open surface forms an open end. Further, an input pad and an output pad are formed on the bottom surface, and a gap is formed between the input pad and the output pad and the outer conductive layer. The input pad is soldered to the circuit board when the filter is soldered to the circuit board. The output pad provides signal input and output, and the outer conductive layer on the bottom surface is grounded to the circuit board.

上述所提到的濾波器表面上所批覆的圖案設計會因運用在不同的通訊系統上而有所不同,而且濾波器表面上的圖案若設計不恰當時,也將會影響濾波器的特性。 The pattern design approved on the surface of the filter mentioned above will be different for different communication systems, and if the pattern on the surface of the filter is not properly designed, it will affect the characteristics of the filter.

因此,本發明之主要目的,在於改善濾波器結構的特性,因此本發明將金屬圖案層設於該開放面上,以增加濾波器結構整體耦合電容,以達到所需要的使用頻段,同時也提供具有低插入損耗(insertion loss)及旁帶拒斥(out-band rejection)等作用。 Therefore, the main object of the present invention is to improve the characteristics of the filter structure. Therefore, the present invention provides a metal pattern layer on the open surface to increase the overall coupling capacitance of the filter structure to achieve the required frequency band, and also provides It has a low insertion loss and an out-band rejection.

本發明之另一目的,在於濾波器上單一共振孔係由二種或二種以不同形狀的孔組成,可以縮小濾波器的尺寸,以增加濾波器結構的Q值,以及可以抑制假信號響應(spurious response)。 Another object of the present invention is that a single resonant aperture on a filter consists of two or two apertures of different shapes, which can reduce the size of the filter to increase the Q value of the filter structure and suppress spurious response. (spurious response).

本發明之再一目的,在於濾波器上單一共振孔係由二種或二種以不同孔形組成,且二孔形的長度不等長,可以校調濾波器結構的效能,以及改善濾波器結構的頻率響應。 A further object of the present invention is that a single resonant aperture system is composed of two or two different aperture shapes, and the length of the two apertures is unequal in length, the performance of the filter structure can be adjusted, and the filter is improved. The frequency response of the structure.

為達上述之目的,本發明提供一種濾波器結構改良,包括:一基體、複數個共振金屬層、一接地金屬層、一金屬圖案層、一輸入電極及一輸出電極。該基體上具有一開放面、一短路面、一頂面、一底面及二側面,該基體上具有複數個共振孔,該些共振孔貫穿該基體,該些共振孔的一端位於該開放面上,另一端位於該短路面上。該些共振金屬層,係設於該些共振孔中。該接地金屬層設於該短路面、該頂面、該底面及該二側面上;其中,設於該短路面上的接地金屬層與該些共振孔中的該些共振金屬層電性連結形成短路端,該共振金屬層位在開放 面上形成開放端;另,在該接地金屬層在設於該底面呈E形圖案,且於該E形圖案的接地金屬層的兩側具有使該基體外露的二裸空區域,該二裸空區域延伸於該開放面上。該金屬圖案層設於該開放面上,並與該接地金屬層電性連結。該輸入電極設於該二裸空區域之其一。該輸出電極設於該另一裸空區域中。其中,以該金屬圖案層與該些共振金屬層及該接地金屬層之間組成具有相互耦合之濾波器結構電氣特性,可由調整該共振金屬層之長度及該金屬圖案層以達到所需的使用頻段。 To achieve the above object, the present invention provides a filter structure improvement comprising: a substrate, a plurality of resonant metal layers, a ground metal layer, a metal pattern layer, an input electrode, and an output electrode. The base body has an open surface, a short circuit surface, a top surface, a bottom surface and two side surfaces. The base body has a plurality of resonant holes, the resonant holes penetrating the base body, and one end of the resonant holes is located on the open surface The other end is located on the short circuit surface. The resonant metal layers are disposed in the resonant holes. The grounding metal layer is disposed on the short-circuiting surface, the top surface, the bottom surface, and the two side surfaces; wherein the grounding metal layer disposed on the short-circuiting surface is electrically connected to the resonant metal layers of the resonant holes Short circuit end, the resonant metal layer is open Forming an open end on the surface; further, the grounding metal layer has an E-shaped pattern on the bottom surface, and has two bare spaces on the two sides of the ground metal layer of the E-shaped pattern to expose the base body. The empty area extends over the open face. The metal pattern layer is disposed on the open surface and electrically connected to the ground metal layer. The input electrode is disposed in one of the two bare spaces. The output electrode is disposed in the other bare space. The electrical characteristics of the filter structure having the mutual coupling between the metal pattern layer and the resonant metal layer and the ground metal layer can be adjusted by adjusting the length of the resonant metal layer and the metal pattern layer to achieve desired use. Frequency band.

在本發明之一實施例中,該金屬圖案層係由複數條線組成,該複數線條包含有一第一邊線、一第二邊線、一第一直線、一第二直線及一第三直線。 In an embodiment of the invention, the metal pattern layer is composed of a plurality of lines, and the plurality of lines includes a first edge, a second edge, a first line, a second line, and a third line.

在本發明之一實施例中,該第一邊線設於該開放面與該頂面的交接處,該二側面與開放面的交接處,以及開放面與底面的交接處,並與該接地金屬面電性連接該第二邊線設於該開放面與該底面的交接觸與該接地金屬層電性連結。 In an embodiment of the invention, the first edge line is disposed at the intersection of the open surface and the top surface, the intersection of the two side surfaces with the open surface, and the intersection of the open surface and the bottom surface, and the grounding The metal surface is electrically connected to the second side line. The ground contact between the open surface and the bottom surface is electrically connected to the ground metal layer.

在本發明之一實施例中,該第一直線設於該兩相鄰的共振孔之間並且與該第一邊線及該第二邊線電性連結;另,該第二直線設於該兩相鄰的共振孔之間並且與該第一邊線及該第二邊線電性連結,其中該第二直線為虛線,其上具有一間隔;又,該第三直線設於該兩相鄰的共振孔之間並且與該第一邊線及該第二邊線電性連結,其中該第三直線為虛線,其上具有一間隔,該間隔的位置鄰近於該第一邊線。 In an embodiment of the present invention, the first straight line is disposed between the two adjacent resonant holes and electrically connected to the first edge and the second edge; and the second straight line is disposed on the two phases Between the adjacent resonant holes and electrically connected to the first edge and the second edge, wherein the second line is a broken line and has a space thereon; and the third line is disposed at the two adjacent resonances The first line and the second line are electrically connected to each other, wherein the third line is a broken line and has a space thereon, and the interval is adjacent to the first line.

在本發明之一實施例中,該輸入電極一端係設於該二裸空區域之其一,另一端延伸於該開放面上鄰近於該些共振孔之其一。 In one embodiment of the present invention, one end of the input electrode is disposed on one of the two bare spaces, and the other end extends on the open surface adjacent to one of the resonant holes.

在本發明之一實施例中,該輸出電極一端係設於該另一該裸空區域上,另一端延伸於該開放面的裸空區域上,且鄰近於該些共振孔之其一。 In one embodiment of the present invention, one end of the output electrode is disposed on the other bare space, and the other end extends on the bare space of the open surface and adjacent to one of the resonant holes.

在本發明之一實施例中,該金屬圖案層係由複數個矩形塊及一直線段組成,該些矩形塊分別設於該開放面上的該些共振孔的周圍,並與該些共振孔中的該些共振金屬層電性連結,且該些矩形塊彼此間各形成有一間隙;該直線段係設於該些矩形塊的一側上。 In an embodiment of the present invention, the metal pattern layer is composed of a plurality of rectangular blocks and a straight line segment, and the rectangular blocks are respectively disposed around the resonant holes on the open surface, and are in the resonant holes. The resonant metal layers are electrically connected, and the rectangular blocks are formed with a gap therebetween; the straight line segments are disposed on one side of the rectangular blocks.

在本發明之一實施例中,該輸入電極及該輸出電極的一端分別設於該基體的底面的該二裸空區域上,該輸入電極及該輸出電極的另一端延伸於該開放面上呈L形狀與該第一個該矩形塊及該第四個該矩形塊的另一側相鄰並形成有一間隙。 In one embodiment of the present invention, one end of the input electrode and the output electrode are respectively disposed on the two bare areas of the bottom surface of the substrate, and the other ends of the input electrode and the output electrode extend on the open surface. The L shape is adjacent to the first one of the rectangular block and the other side of the fourth rectangular block and forms a gap.

在本發明之一實施例中,該些共振孔為圓孔或該些不同口徑的橢圓孔,或者該橢圓孔中具有一圓孔。 In an embodiment of the invention, the resonant holes are circular holes or elliptical holes of different calibers, or the elliptical holes have a circular hole therein.

在本發明之一實施例中,該些共振金屬層設於該些橢圓孔及該些圓孔的內壁上。 In an embodiment of the invention, the resonant metal layers are disposed on the elliptical holes and the inner walls of the circular holes.

在本發明之一實施例中,該橢圓孔的長度小於該圓孔的長度。 In an embodiment of the invention, the length of the elliptical hole is less than the length of the circular hole.

在本發明之一實施例中,該金屬圖案層為一倒E形,該倒E形的金屬圖案層圍設於該些共振孔一側與該頂面及二側面的接地金屬層電性連結;其中,該倒E形具有環設於直徑最小的橢圓孔上的一環形部,該環形部與該底面的接地金屬層電性連結。 In one embodiment of the present invention, the metal pattern layer is an inverted E shape, and the inverted E-shaped metal pattern layer is electrically connected to the ground metal layer of the top surface and the two side surfaces. The inverted E-shape has an annular portion disposed on the elliptical hole having the smallest diameter, and the annular portion is electrically connected to the grounded metal layer of the bottom surface.

為達上述之目的,本發明提供另一種濾波器結構改良,包括:一基體、複數個共振金屬層、一接地金屬層、一金屬圖案層、一輸入電極及一輸出電極。該基體上具有一開放面、一短路面、一頂面、一底面及二側面,該基體上具有複數個共振孔,該些共振孔貫穿該基體,該些共振孔的一端位於該開放面上,另一端位於該短路面上。該些共振金屬層設於該些共振孔中。該接地金屬層設於該短路面、該頂面、該底面及該二側面上;其中,設於該短路面上的接地金屬層與該些共振孔中的該些共振金屬層電性連結形成短路端,該共振金屬層位在開放面上形成開放端;另,在該接地金屬層在設於該底面呈E形圖案,且於該E形圖案的接地金屬層的兩側具有使該基體外露的二裸空區域,該二裸空區域延伸於該開放面上。該金屬圖案層設於該開放面上。該輸入電極設於該二裸空區域之其一。該輸出電極設於該另一裸空區域中。其中,以該金屬圖案層與該些共振金屬層及該接地金屬層之間組成具有相互耦合之濾波器結構電氣特性,可由調整該共振金屬層之長度及該金屬圖案層以達到所需的使用頻段。 To achieve the above object, the present invention provides another filter structure improvement, comprising: a substrate, a plurality of resonant metal layers, a ground metal layer, a metal pattern layer, an input electrode, and an output electrode. The base body has an open surface, a short circuit surface, a top surface, a bottom surface and two side surfaces. The base body has a plurality of resonant holes, the resonant holes penetrating the base body, and one end of the resonant holes is located on the open surface The other end is located on the short circuit surface. The resonant metal layers are disposed in the resonant holes. The grounding metal layer is disposed on the short-circuiting surface, the top surface, the bottom surface, and the two side surfaces; wherein the grounding metal layer disposed on the short-circuiting surface is electrically connected to the resonant metal layers of the resonant holes a short-circuit end, the resonant metal layer forms an open end on the open surface; and the ground metal layer has an E-shaped pattern on the bottom surface, and has the base body on both sides of the ground metal layer of the E-shaped pattern An exposed two bare space region, the two bare spaces extending on the open surface. The metal pattern layer is disposed on the open surface. The input electrode is disposed in one of the two bare spaces. The output electrode is disposed in the other bare space. The electrical characteristics of the filter structure having the mutual coupling between the metal pattern layer and the resonant metal layer and the ground metal layer can be adjusted by adjusting the length of the resonant metal layer and the metal pattern layer to achieve desired use. Frequency band.

在本發明之一實施例中,該些共振孔為圓孔或不同口徑的橢圓孔,或者橢圓孔中具有一圓孔。 In an embodiment of the invention, the resonant holes are circular holes or elliptical holes of different calibers, or a circular hole is formed in the elliptical holes.

在本發明之一實施例中,該些共振金屬層設於該些橢圓孔及該些圓孔的內壁上。 In an embodiment of the invention, the resonant metal layers are disposed on the elliptical holes and the inner walls of the circular holes.

在本發明之一實施例中,該橢圓孔的長度小於該圓孔的長度。 In an embodiment of the invention, the length of the elliptical hole is less than the length of the circular hole.

在本發明之一實施例中,該金屬圖案層為直線段,該直線段設於該些共振孔的一側。 In an embodiment of the invention, the metal pattern layer is a straight line segment, and the straight line segment is disposed on one side of the resonant holes.

10‧‧‧濾波器結構 10‧‧‧Filter structure

1‧‧‧基體 1‧‧‧ base

11‧‧‧開放面 11‧‧‧Open face

111、112、113、114‧‧‧裸空區域 111, 112, 113, 114‧‧‧ naked space

12‧‧‧短路面 12‧‧‧Short-circuit surface

13‧‧‧頂面 13‧‧‧ top surface

14‧‧‧底面 14‧‧‧ bottom

141‧‧‧裸空區域 141‧‧‧naked area

15、16‧‧‧側面 15, 16‧‧‧ side

17‧‧‧共振孔 17‧‧‧Resonance hole

171a、172a、173a‧‧‧橢圓孔 171a, 172a, 173a‧‧‧ oval holes

171b、172b、173b‧‧‧圓孔 171b, 172b, 173b‧‧‧ round holes

2‧‧‧共振金屬層 2‧‧‧Resonant metal layer

3‧‧‧接地金屬層 3‧‧‧Grounded metal layer

31‧‧‧E形圖案 31‧‧‧E-shaped pattern

4、4a、4b‧‧‧金屬圖案層 4, 4a, 4b‧‧‧ metal pattern layer

41a、42a、43a、44a‧‧‧矩形塊 41a, 42a, 43a, 44a‧‧‧ rectangular blocks

41b‧‧‧環形部 41b‧‧‧Rings

45a‧‧‧直線段 45a‧‧‧ Straight line

41‧‧‧第一邊線 41‧‧‧First line

42‧‧‧第二邊線 42‧‧‧Second line

43‧‧‧第一直線 43‧‧‧First straight line

44‧‧‧第二直線 44‧‧‧Second straight line

441‧‧‧間隔 441‧‧‧ interval

45‧‧‧第三直線 45‧‧‧ third straight line

451‧‧‧間隔 451‧‧‧ interval

46a、47a‧‧‧間隙 46a, 47a‧‧‧ gap

5、5a‧‧‧輸入電極 5, 5a‧‧‧ input electrode

6、6a‧‧‧輸出電極 6, 6a‧‧‧ output electrode

20、20a、30、30a‧‧‧曲線 20, 20a, 30, 30a‧‧‧ curves

201、201a‧‧‧截止帶傳輸零點 201, 201a‧‧‧ cut-off belt transmission zero

圖1,係發明之第一實施例之濾波器結構外觀示意圖;圖2,係為圖1的仰視示意圖;圖3,係為圖1的後視示意圖;圖4,係本發明之第二實施例之濾波器結構外觀示意圖;圖5a,係本發明之第一實施例之濾波器結構的輸入反射係數(S11)及順向傳輸係數(S21)的量測曲線示意圖;圖5b,係本發明之第二實施例之濾波器結構的輸入反射係數(S11)及順向傳輸係數(S21)的量測曲線示意圖;圖6,係本發明之第三實施例之濾波器結構外觀示意圖;圖7,係圖6在7-7位置的側剖視示意圖;圖8,係本發明之第四實施例之濾波器結構外觀示意圖。 1 is a schematic view showing the structure of a filter according to a first embodiment of the invention; FIG. 2 is a bottom view of FIG. 1; FIG. 3 is a rear view of FIG. 1; and FIG. 4 is a second embodiment of the present invention. FIG. 5a is a schematic diagram of a measurement curve of an input reflection coefficient (S11) and a forward transmission coefficient (S21) of a filter structure according to a first embodiment of the present invention; FIG. 5b is a schematic diagram of the present invention. 2 is a schematic diagram of a measurement curve of an input reflection coefficient (S11) and a forward transmission coefficient (S21) of the filter structure of the second embodiment; FIG. 6 is a schematic view showing the appearance of a filter structure of a third embodiment of the present invention; Figure 6 is a side cross-sectional view of the position of Figure 7 in the 7-7 position; Figure 8 is a schematic view showing the appearance of the filter structure of the fourth embodiment of the present invention.

茲有關本發明之技術內容及詳細說明,現配合圖式說明如下:請參閱圖1-3,係本發明之第一實施例之濾波器結構外觀、仰視及後視示意圖。如圖所示:本發明之濾波器結構改良,該濾波器結構10包括:一基體1、複數個共振金屬層2、一接地金屬層3、一金屬圖案層4、一輸入電極5及一輸出電極6。其中,以該內金屬層2、該接地金屬層3、該輸入電極5及該輸出電極6披覆在該基體1形成一介質濾波器結構。其中,該基體1,係以高介電常數的陶瓷材料製成方形體,其上具有一開放面11、一短路面12、一頂面13、一底面14及二側面15、16。於該基體1上設有複數個共振孔17,該共振孔17貫穿該基體1,該共振孔 17一端開口位於該開放面11上,一端開口位於該短路面12上。在本圖式中,該共振孔17為圓孔。 The technical content and detailed description of the present invention will now be described with reference to the following drawings: Referring to Figures 1-3, the appearance, bottom view and rear view of the filter structure of the first embodiment of the present invention are shown. As shown in the figure, the filter structure of the present invention is improved. The filter structure 10 includes: a substrate 1, a plurality of resonant metal layers 2, a grounded metal layer 3, a metal pattern layer 4, an input electrode 5, and an output. Electrode 6. The inner metal layer 2, the ground metal layer 3, the input electrode 5, and the output electrode 6 are coated on the substrate 1 to form a dielectric filter structure. The substrate 1 is made of a ceramic material having a high dielectric constant and has an open surface 11, a short-circuit surface 12, a top surface 13, a bottom surface 14, and two side surfaces 15, 16. A plurality of resonant holes 17 are disposed in the base 1 , and the resonant holes 17 extend through the base 1 and the resonant holes The one end opening 17 is located on the open surface 11 and the one end opening is located on the short circuit surface 12. In the figure, the resonance hole 17 is a circular hole.

該些共振金屬層2,係設於該些共振孔17的內壁上,使該些共振孔17形成濾波器結構10的共振器。 The resonant metal layers 2 are disposed on the inner walls of the resonant holes 17 such that the resonant holes 17 form a resonator of the filter structure 10.

該接地金屬層3,係設於該短路面12、該頂面13、該底面14及該二側面15、16上。其中,在該接地金屬層3設於該短路面12與該些共振孔17中的該些共振金屬層2電性連結形成短路端,該些共振金屬層2位在開放面11上的形成開放端。另,在該接地金屬層3在設於該底面14呈E形圖案31,且於該E形圖案31的兩側形成有使該基體1外露的二裸空區域141,該二裸空區域141延伸於該開放面11上。 The grounding metal layer 3 is disposed on the short-circuit surface 12, the top surface 13, the bottom surface 14, and the two side surfaces 15, 16. The grounding metal layer 3 is electrically connected to the resonant metal layer 2 disposed in the short-circuit surface 12 and the resonant holes 17 to form a short-circuited end, and the resonant metal layer 2 is formed on the open surface 11 to be open. end. In addition, the ground metal layer 3 is formed on the bottom surface 14 in an E-shaped pattern 31, and two bare spaces 141 for exposing the substrate 1 are formed on both sides of the E-shaped pattern 31. The two bare spaces 141 are formed. Extending on the open face 11.

該金屬圖案層4,係由複數條線組成,該複數線條包含有一第一邊線41、一第二邊線42、一第一直線43、一第二直線44及一第三直線45。該第一邊線41設於該開放面11與該頂面13的交接處,該二側面15、16與開放面11的交接處,以及該開放面11與底面14的交接處,並與該接地金屬面3電性連接。該第二邊線42設於該開放面11與該底面14的交接觸與該接地金屬層3電性連結。另,該第一直線43設於該兩相鄰的共振孔17之間並且與該第一邊線41及該第二邊線42電性連結。再,該第二直線44設於該兩相鄰的共振孔17之間並且與該第一邊線41及該第二邊線42電性連結,其中,該第二直線44上為虛線,其上具有一間隔441。又,於該第三直線45設於該兩相鄰的共振孔17之間並且與該第一邊線41及該第二邊線42電性連結,其中,該第三直線45上為虛線,其上具有一間隔451,該間隙451的位置鄰近於該第一邊線41。以 該金屬圖案層4的第一邊線41、一第二邊線42、一第一直線43、一第二直線44及一第三直線45將該開放面11上圍設成有多個裸空區域111、112、113、114外,並與該共振孔17的共振金屬層2及該接地金屬層3之間組成具有相互耦合之濾波器結構10電氣特性,可由調整該共振金屬層2之長度及該金屬圖案層4以達到所需要的頻寬,以及提供低插入損耗(insertion loss)及旁帶拒斥(out-band rejection)等作用。 The metal pattern layer 4 is composed of a plurality of lines including a first edge 41, a second edge 42, a first line 43, a second line 44, and a third line 45. The first edge line 41 is disposed at the intersection of the open surface 11 and the top surface 13, the intersection of the two side surfaces 15, 16 and the open surface 11, and the intersection of the open surface 11 and the bottom surface 14, and The grounded metal surface 3 is electrically connected. The second edge line 42 is electrically connected to the ground metal layer 3 at the interface between the open surface 11 and the bottom surface 14 . The first line 43 is disposed between the two adjacent resonant holes 17 and electrically connected to the first edge 41 and the second edge 42. The second line 44 is disposed between the two adjacent resonant holes 17 and electrically connected to the first edge 41 and the second edge 42. The second line 44 is a dotted line on the second line 44. There is a gap 441. Further, the third line 45 is disposed between the two adjacent resonant holes 17 and electrically connected to the first edge line 41 and the second edge line 42. The third line 45 is a dotted line. There is a gap 451 on the top, and the gap 451 is located adjacent to the first edge line 41. Take The first edge line 41, the second edge line 42, the first line 43, the second line 44, and the third line 45 of the metal pattern layer 4 surround the open surface 11 with a plurality of bare areas 111. And 112, 113, 114, and the resonant metal layer 2 of the resonant hole 17 and the ground metal layer 3 are formed to have electrical characteristics of the filter structure 10 coupled to each other, and the length of the resonant metal layer 2 can be adjusted and The metal pattern layer 4 serves to achieve the required bandwidth and provides low insertion loss and out-band rejection.

該輸入電極5,其上一端係設於該裸空區域141,另一端延伸於該開放面11的裸空區域111上,且鄰近於該些共振孔17之其一。以該輸入電極5提供信號輸入於該濾波器結構10中進行濾波處理。 The input electrode 5 has an upper end that is disposed on the bare space 141 and a other end that extends on the bare space 111 of the open surface 11 and is adjacent to one of the resonant holes 17 . A signal is supplied from the input electrode 5 to the filter structure 10 for filtering processing.

該輸出電極6,其上一端係設於該裸空區域141,另一端延伸於該開放面11的裸空區域114上,且鄰近於該些共振孔17之其一。以該輸出電極6提供經該濾波器結構10濾波後的信號輸出。 The output electrode 6 has an upper end disposed on the bare space 141 and a other end extending on the bare space 114 of the open surface 11 and adjacent to one of the resonant holes 17. The output of the signal filtered by the filter structure 10 is provided by the output electrode 6.

藉由,該濾波器結構10的該輸入電極5、該輸出電極6及該底面14的接地金屬層3,使該濾波器結構10得以表面黏著在電路板(圖中未示)上。 The filter structure 10 is surface-attached to a circuit board (not shown) by the input electrode 5 of the filter structure 10, the output electrode 6, and the ground metal layer 3 of the bottom surface 14.

請參閱圖4,係本發明之第二實施例之濾波器結構外觀示意圖。如圖所示:本第二實施例所揭露的濾波器結構10與第一實施例的濾波器結構10大致相同,所不同處係在於該第二實施例的金屬圖案層4a、輸入電極5a及輸出電極6a。該金屬圖案層4a係由複數個矩形塊41a、42a、43a、44a及一直線段45a組成。該些矩形塊41a、42a、43a、44a分別設於該些共振孔17的周圍並與該些共振孔17中的該些共振金屬層2電性連結,且該些矩形塊41a、42a、43a、44a彼此間各形成有一間隙46a。該直線段45a係設於該些矩形塊41a、42a、43a、44a的一側上。該輸入電 極5a及該輸出電極6a的一端設於該基體1的底面14的裸空區域141上,該輸入電極5a及該輸出電極6a的另一端延伸於該開放面11上呈L形狀與該第一個矩形塊41a及該第四個矩形塊44a的另一側相鄰並形成有一間隙47a。 Referring to FIG. 4, it is a schematic diagram of the appearance of a filter structure according to a second embodiment of the present invention. As shown in the figure, the filter structure 10 disclosed in the second embodiment is substantially the same as the filter structure 10 of the first embodiment, and the difference lies in the metal pattern layer 4a and the input electrode 5a of the second embodiment. The output electrode 6a. The metal pattern layer 4a is composed of a plurality of rectangular blocks 41a, 42a, 43a, 44a and a straight line segment 45a. The rectangular blocks 41a, 42a, 43a, and 44a are respectively disposed around the resonant holes 17 and electrically connected to the resonant metal layers 2 in the resonant holes 17, and the rectangular blocks 41a, 42a, 43a 44a is formed with a gap 46a between each other. The straight line segment 45a is provided on one side of the rectangular blocks 41a, 42a, 43a, 44a. The input power The pole 5a and one end of the output electrode 6a are disposed on the bare space 141 of the bottom surface 14 of the base 1. The other end of the input electrode 5a and the output electrode 6a extend in the L shape on the open surface 11 and the first The rectangular block 41a and the other side of the fourth rectangular block 44a are adjacent to each other and are formed with a gap 47a.

同樣地,藉由濾波器結構10的該金屬圖案層4a、該輸入電極5a、該輸出電極6a與該些共振孔17的共振金屬層2及該接地金屬層3之間組成具有相互耦合之濾波器結構10電氣特性,可由調整該共振金屬層2之長度及該金屬圖案層4以達到所需要的頻段,以及提供低插入損耗(insertion loss)及旁帶拒斥(out-band rejection)等作用。 Similarly, the metal pattern layer 4a of the filter structure 10, the input electrode 5a, the output electrode 6a, and the resonant metal layer 2 of the resonant holes 17 and the ground metal layer 3 are coupled to each other. The electrical characteristics of the structure 10 can be adjusted by adjusting the length of the resonant metal layer 2 and the metal pattern layer 4 to achieve a desired frequency band, and providing low insertion loss and out-band rejection. .

請參閱圖5a、5b,係本發明之第一實施例及第二實施例之濾波器結構的輸入反射係數(S11)及順向傳輸係數(S21)的量測曲線示意圖。如圖所示:由於本發明之第一實施例及第二實施例的濾波器結構10的金屬圖案層4與4a的圖案設計不同,因此在量測時具有反射係數(S11)的曲線20、20a及順向傳輸係數(S21)的曲線30、30a。因此在進行第一實施例的濾波器結構的順向傳輸係數量測該曲線20上所顯示的截止帶傳輸零點201的位置在右邊。而量測第二實施例的濾波器結構10的順向傳輸係數的曲線20a上所顯示的截止帶傳輸零點201a的位置在左邊。 5a and 5b are schematic diagrams showing the measurement curves of the input reflection coefficient (S11) and the forward transmission coefficient (S21) of the filter structures of the first embodiment and the second embodiment of the present invention. As shown in the figure, since the pattern design of the metal pattern layers 4 and 4a of the filter structure 10 of the first embodiment and the second embodiment of the present invention is different, the curve 20 having the reflection coefficient (S11) at the time of measurement, Curves 30, 30a of 20a and the forward transmission coefficient (S21). Therefore, the position of the cut-off band transmission zero point 201 displayed on the curve 20 is measured on the right side in the forward transmission coefficient of the filter structure of the first embodiment. The position of the cut-off band transmission zero point 201a displayed on the curve 20a of the forward transmission coefficient of the filter structure 10 of the second embodiment is measured on the left side.

由上述的量測可知,本發明在第一實施例及第二實施例的濾波器結構10的金屬圖案層4與4a的圖案設計不同,除了可以設計不同的使頻段外,該濾波器結構10的截止帶傳輸零點位置也不同。 It can be seen from the above measurement that the pattern design of the metal pattern layers 4 and 4a of the filter structure 10 of the first embodiment and the second embodiment is different, and the filter structure 10 can be designed except that different frequency bands can be designed. The cut-off band transmission zero position is also different.

請參閱圖6、7,係本發明之第三實施例之濾波器結構外觀及圖6在7-7位置的側剖視示意圖。如圖所示:本實施例與第一實施例大致相同, 所不同處係在於該些共振孔17係由該些不同口徑大小的橢圓孔171a、172a、173a,在本實施例中該口徑小的橢圓孔173a位於兩個大口徑的橢圓孔171a、172a之間。且於該些橢圓孔171a、172a、173a內各其有一圓孔171b、172b、173b,該些圓孔171b、172b、173b鄰近於該些橢圓孔171a、172a、173a內徑上緣處。其次,將該共振金屬層2設於該些橢圓孔171a、172a、173a及該些圓孔171b、172b、173b的內壁上。該些共振孔17以該橢圓孔171a(172a、173a)連通該圓孔171b(172b、173b)的設計,主要是要縮小濾波器結構10的尺寸,以增加濾波器結構的Q值,以及可以抑制假信號響應(spurious response)。在本圖式中,該橢圓孔171a(172a、173a)的長度小於該圓孔171b(172b、173b)的長度,以該些橢圓孔171a(172a、173a)的長度可以校調濾波器結構10的效能,以及改善濾波器結構10的頻率響應。 Please refer to FIGS. 6 and 7, which are schematic views of the filter structure of the third embodiment of the present invention and a side cross-sectional view of FIG. 6 at positions 7-7. As shown in the figure: this embodiment is substantially the same as the first embodiment, The difference is that the resonant holes 17 are formed by the elliptical holes 171a, 172a, and 173a having different caliber sizes. In the embodiment, the elliptical holes 173a having small calibers are located in the two large-diameter elliptical holes 171a and 172a. between. And each of the elliptical holes 171a, 172a, 173a has a circular hole 171b, 172b, 173b adjacent to the upper edge of the inner diameter of the elliptical holes 171a, 172a, 173a. Next, the resonant metal layer 2 is provided on the inner walls of the elliptical holes 171a, 172a, and 173a and the circular holes 171b, 172b, and 173b. The resonant holes 17 are designed to communicate the circular holes 171b (172b, 173b) with the elliptical holes 171a (172a, 173a), mainly to reduce the size of the filter structure 10 to increase the Q value of the filter structure, and Suppress the spurious response. In the present drawing, the length of the elliptical hole 171a (172a, 173a) is smaller than the length of the circular hole 171b (172b, 173b), and the filter structure 10 can be adjusted by the length of the elliptical holes 171a (172a, 173a). The performance, as well as improving the frequency response of the filter structure 10.

其次,該輸入電極5及該輸出電極6僅設於該底面14的裸空區域141中,該輸入電極5及該輸出電極6的另一端並未延伸於該開放面11上。 Next, the input electrode 5 and the output electrode 6 are disposed only in the bare space 141 of the bottom surface 14. The other ends of the input electrode 5 and the output electrode 6 do not extend on the open surface 11.

值得一提的是,該第二實施例的金屬圖案層4a的直線段45a可以設於該些共振孔17的一側,以該直線段45a與該些共振孔17內的該些共振金屬層2產生耦合電容、電感,使該濾波器結構10可以改善反射係數(S11)匹配和旁帶拒斥(out-band rejection)程度,以及達到所需的使用頻段。 It is to be noted that the straight line segment 45a of the metal pattern layer 4a of the second embodiment may be disposed on one side of the resonant holes 17, and the straight line segments 45a and the resonant metal layers in the resonant holes 17 2 Coupling capacitance and inductance are generated, so that the filter structure 10 can improve the reflection coefficient (S11) matching and the degree of out-band rejection, and achieve the required frequency band of use.

請參閱圖8,係本發明之第四實施例之濾波器結構外觀示意圖。如圖所示:本實施例與第三實施例大致相同,所不同處係在於該金屬圖案層4b為一倒E形,該倒E形的金屬圖案層4b圍設於該些共振孔17一側與該頂面13及二側面15、16的接地金屬層3電性連結。其中,該倒E形具有 一環設於直徑最小的橢圓孔上的一環形部41b,該環形部41b與該底面14的接地金屬層3電性連結。 Please refer to FIG. 8, which is a schematic diagram of the appearance of a filter structure according to a fourth embodiment of the present invention. As shown in the figure, this embodiment is substantially the same as the third embodiment, except that the metal pattern layer 4b is an inverted E shape, and the inverted E-shaped metal pattern layer 4b is disposed around the resonant holes 17 The side is electrically connected to the ground metal layer 3 of the top surface 13 and the two side surfaces 15 and 16. Wherein the inverted E shape has An annular portion 41b is disposed on the elliptical hole having the smallest diameter, and the annular portion 41b is electrically connected to the grounded metal layer 3 of the bottom surface 14.

藉由,該金屬圖案層4b的倒E形設計,與該些共振孔17內的該些共振金屬層2組成具有相互耦合之濾波器結構10電氣特性,可由調整該共振金屬層2之長度及該金屬圖案層4b以達到所需的使用頻段。 The inverted E-shaped design of the metal pattern layer 4b and the resonant metal layers 2 in the resonant holes 17 are combined to have electrical characteristics of the filter structure 10 coupled to each other, and the length of the resonant metal layer 2 can be adjusted. The metal pattern layer 4b is used to achieve the desired frequency band of use.

惟以上所述僅為本發明之較佳實施例,非意欲侷限本發明的專利保護範圍,故舉凡運用本發明說明書或圖式內容所為的等效變化,均同理皆包含於本發明的權利保護範圍內,合予陳明。 However, the above description is only the preferred embodiment of the present invention, and is not intended to limit the scope of the invention, and the equivalents thereof are all included in the scope of the present invention. Within the scope of protection, it is given to Chen Ming.

Claims (4)

一種濾波器結構改良,包括:一基體,其上具有一開放面、一短路面、一頂面、一底面及二側面,該基體上具有複數個共振孔,該些共振孔貫穿該基體,該些共振孔的一端位於該開放面上,另一端位於該短路面上;複數個共振金屬層,係設於該些共振孔中;一接地金屬層,係設於該短路面、該頂面、該底面及該二側面上;其中,設於該短路面上的接地金屬層與該些共振孔中的該些共振金屬層電性連結形成短路端,該共振金屬層位在開放面上形成開放端;另,在該接地金屬層在設於該底面呈E形圖案,且於該E形圖案的接地金屬層的兩側具有使該基體外露的二裸空區域,該二裸空區域延伸於該開放面上;一金屬圖案層,係設於該開放面上,並與該接地金屬層電性連結,該金屬圖案層係由複數條線組成,該複數線條包含有一第一邊線、一第二邊線、一第一直線、一第二直線及一第三直線,該第一邊線設於該開放面與該頂面的交接處,該二側面與該開放面的交接處,以及該開放面與該底面的交接處,並與該接地金屬面電性連結,該第二邊線設於該開放面與該底面的交接觸與該接地金屬層電性連結,該第一直線設於該兩相鄰的共振孔之間並且與該第一邊線及該第二邊線電性連結;另,該第二直線設於該兩相鄰的共振孔之間並且與該第一邊線及該第二邊線電性連結,其中該第二直線為虛線,其上具有一間隔;又,該第三直線設於該兩相鄰的共振孔之間並且與該第一邊線及該 第二邊線電性連結,其中該第三直線為虛線,其上具有一間隔,該間隔的位置鄰近於該第一邊線;一輸入電極,其上一端係設於該二裸空區域之其一,另一端延伸於該開放面上鄰近於該些共振孔之其一;一輸出電極,其上一端係設於該另一該裸空區域上,另一端延伸於該開放面的裸空區域上,且鄰近於該些共振孔之其一;其中,以該金屬圖案層與該些共振金屬層及該接地金屬層之間組成具有相互耦合之濾波器結構電氣特性,可由調整該共振金屬層之長度及該金屬圖案層以達到所需的使用頻段。 A filter structure improvement includes: a base body having an open surface, a short circuit surface, a top surface, a bottom surface and two side surfaces; the base body has a plurality of resonant holes, the resonant holes penetrating the base body, One end of the resonant hole is located on the open surface, and the other end is located on the short circuit surface; a plurality of resonant metal layers are disposed in the resonant holes; a grounded metal layer is disposed on the short circuit surface, the top surface, The bottom metal layer and the two side surfaces; wherein the grounding metal layer disposed on the short-circuiting surface is electrically connected to the resonant metal layers of the resonant holes to form a short-circuited end, and the resonant metal layer is opened on the open surface In addition, the ground metal layer has an E-shaped pattern on the bottom surface, and has two bare spaces on the two sides of the ground metal layer of the E-shaped pattern, and the two bare spaces extend to a metal pattern layer is disposed on the open surface and electrically connected to the ground metal layer, the metal pattern layer is composed of a plurality of lines, the plurality of lines including a first edge, and a Second side, one a straight line, a second straight line and a third straight line, the first edge line is disposed at the intersection of the open surface and the top surface, the intersection of the two side surfaces with the open surface, and the intersection of the open surface and the bottom surface And electrically connected to the grounded metal surface, the second edge is electrically connected to the ground metal layer at an intersection of the open surface and the bottom surface, and the first straight line is disposed between the two adjacent resonant holes And electrically connected to the first edge and the second edge; the second line is disposed between the two adjacent resonant holes and electrically connected to the first edge and the second edge, wherein The second line is a broken line and has a space thereon; further, the third line is disposed between the two adjacent resonant holes and the first edge and the The second side line is electrically connected, wherein the third line is a broken line, and has a space thereon, the interval is adjacent to the first edge line; an input electrode, the upper end of which is disposed in the second bare space region The other end extends on the open surface adjacent to one of the resonant holes; an output electrode having an upper end attached to the other bare space and the other end extending to the bare space of the open surface And adjacent to the one of the resonant holes; wherein the metal pattern layer and the resonant metal layer and the ground metal layer form electrical characteristics of the filter structure having mutual coupling, and the resonant metal layer can be adjusted The length and the metal pattern layer are used to achieve the desired frequency band of use. 一種濾波器結構改良,包括:一基體,其上具有一開放面、一短路面、一頂面、一底面及二側面,該基體上具有複數個共振孔,該些共振孔貫穿該基體,該些共振孔的一端位於該開放面上,另一端位於該短路面上;複數個共振金屬層,係設於該些共振孔中,一接地金屬層,係設於該短路面、該頂面、該底面及該二側面上;其中,設於該短路面上的接地金屬層與該些共振孔中的該些共振金屬層電性連結形成短路端,該共振金屬層位在開放面上形成開放端;另,在該接地金屬層在設於該底面呈E形圖案,且於該E形圖案的接地金屬層的兩側具有使該基體外露的二裸空區域,該二裸空區域延伸於該開放面上; 一金屬圖案層,係設於該開放面上,並與該接地金屬層電性連結,該金屬圖案層係由複數個矩形塊及一直線段組成,該些矩形塊分別設於該開放面上的該些共振孔的周圍,並與該些共振孔中的該些共振金屬層電性連結,且該些矩形塊彼此間各形成有一間隙;該直線段係設於該些矩形塊的一側上;一輸入電極,係設於該二裸空區域之其一;一輸出電極,係設於該另一裸空區域中;其中,該輸入電極及該輸出電極的一端分別設於該基體的底面的該二裸空區域上,該輸入電極及該輸出電極的另一端延伸於該開放面上呈L形狀與第一個該矩形塊及第四個該矩形塊的另一側相鄰並形成有一間隙,以該金屬圖案層與該些共振金屬層及該接地金屬層之間組成具有相互耦合之濾波器結構電氣特性,可由調整該共振金屬層之長度及該金屬圖案層以達到所需的使用頻段。 A filter structure improvement includes: a base body having an open surface, a short circuit surface, a top surface, a bottom surface and two side surfaces; the base body has a plurality of resonant holes, the resonant holes penetrating the base body, One end of the resonant hole is located on the open surface, and the other end is located on the short circuit surface; a plurality of resonant metal layers are disposed in the resonant holes, and a grounding metal layer is disposed on the short circuit surface, the top surface, The bottom metal layer and the two side surfaces; wherein the grounding metal layer disposed on the short-circuiting surface is electrically connected to the resonant metal layers of the resonant holes to form a short-circuited end, and the resonant metal layer is opened on the open surface In addition, the ground metal layer has an E-shaped pattern on the bottom surface, and has two bare spaces on the two sides of the ground metal layer of the E-shaped pattern, and the two bare spaces extend to The open side; a metal pattern layer is disposed on the open surface and electrically connected to the ground metal layer. The metal pattern layer is composed of a plurality of rectangular blocks and a straight line segment, and the rectangular blocks are respectively disposed on the open surface. The resonant holes are electrically connected to the resonant metal layers of the resonant holes, and the rectangular blocks are formed with a gap therebetween; the straight segments are disposed on one side of the rectangular blocks An input electrode is disposed in one of the two bare regions; an output electrode is disposed in the other bare space; wherein the input electrode and one end of the output electrode are respectively disposed on a bottom surface of the substrate The other end of the input electrode and the output electrode extend in an L shape on the open surface adjacent to the other side of the first rectangular block and the fourth rectangular block and form a a gap, wherein the metal pattern layer and the resonant metal layer and the ground metal layer form electrical characteristics of a filter structure having mutual coupling, and the length of the resonant metal layer and the metal pattern layer can be adjusted to achieve a desired use. Frequency band. 一種濾波器結構改良,包括:一基體,其上具有一開放面、一短路面、一頂面、一底面及二側面,該基體上具有複數個共振孔,該些共振孔貫穿該基體,該些共振孔的一端位於該開放面上,另一端位於該短路面上,其中該些共振孔為橢圓孔中具有一圓孔,該橢圓孔的長度小於該圓孔的長度;複數個共振金屬層,係設於該些橢圓孔及該些圓孔的內壁上;一接地金屬層,係設於該短路面、該頂面、該底面及該二側面上;其中,設於該短路面上的接地金屬層與該些共振孔中的該些共振金屬層電性連結形成短路端,該共振金屬層位在開放面上形成開放端; 另,在該接地金屬層在設於該底面呈E形圖案,且於該E形圖案的接地金屬層的兩側具有使該基體外露的二裸空區域,該二裸空區域延伸於該開放面上;一金屬圖案層,係設於該開放面上,並與該接地金屬層電性連結,該金屬圖案層為一倒E形,該倒E形的金屬圖案層圍設於該些共振孔一側與該頂面及二側面的接地金屬層電性連結;其中,該倒E形具有環設於直徑最小的橢圓孔上的一環形部,且該環形部並與該底面的接地金屬層電性連結;一輸入電極,係設於該二裸空區域之其一;一輸出電極,係設於該另一裸空區域中;其中,以該金屬圖案層與該些共振金屬層及該接地金屬層之間組成具有相互耦合之濾波器結構電氣特性,可由調整該共振金屬層之長度及該金屬圖案層以達到所需的使用頻段。 A filter structure improvement includes: a base body having an open surface, a short circuit surface, a top surface, a bottom surface and two side surfaces; the base body has a plurality of resonant holes, the resonant holes penetrating the base body, One end of the resonant hole is located on the open surface, and the other end is located on the short circuit surface, wherein the resonant holes have a circular hole in the elliptical hole, the length of the elliptical hole is smaller than the length of the circular hole; a plurality of resonant metal layers, And being disposed on the inner wall of the elliptical hole and the circular hole; a grounding metal layer is disposed on the short circuit surface, the top surface, the bottom surface and the two side surfaces; wherein the short circuit surface is disposed The grounding metal layer is electrically connected to the resonant metal layers of the resonant holes to form a short-circuited end, and the resonant metal layer forms an open end on the open surface; In addition, the ground metal layer has an E-shaped pattern on the bottom surface, and has two bare spaces on the two sides of the ground metal layer of the E-shaped pattern, and the two bare spaces extend to the opening. a metal pattern layer is disposed on the open surface and electrically connected to the ground metal layer, wherein the metal pattern layer is an inverted E shape, and the inverted E-shaped metal pattern layer surrounds the resonance layer The side of the hole is electrically connected to the grounding metal layer of the top surface and the two side surfaces; wherein the inverted E shape has an annular portion disposed on the elliptical hole having the smallest diameter, and the annular portion and the grounding metal of the bottom surface An electrical connection; an input electrode is disposed in one of the two bare regions; an output electrode is disposed in the other bare region; wherein the metal pattern layer and the resonant metal layer The ground metal layers are formed with electrical characteristics of the filter structure coupled to each other, and the length of the resonant metal layer and the metal pattern layer can be adjusted to achieve a desired frequency band of use. 一種濾波器結構改良,包括:一基體,其上具有一開放面、一短路面、一頂面、一底面及二側面,該基體上具有複數個共振孔,該些共振孔貫穿該基體,該些共振孔的一端位於該開放面上,另一端位於該短路面上,其中該些共振孔為橢圓孔中具有一圓孔,該橢圓孔的長度小於該圓孔的長度;複數個共振金屬層,係設於該些該些橢圓孔及該些圓孔的內壁上;一接地金屬層,係設於該短路面、該頂面、該底面及該二側面上;其中,設於該短路面上的接地金屬層與該些共振孔中的該些共振金屬 層電性連結形成短路端,該共振金屬層位在開放面上形成開放端;另,在該接地金屬層在設於該底面呈E形圖案,且於該E形圖案的接地金屬層的兩側具有使該基體外露的二裸空區域,該二裸空區域延伸於該開放面上;一金屬圖案層,係設於該開放面上,該金屬圖案層為直線段,該直線段設於該些共振孔的一側;一輸入電極,係設於該二裸空區域之其一;一輸出電極,係設於該另一裸空區域中;其中,以該金屬圖案層與該些共振金屬層及該接地金屬層之間組成具有相互耦合之濾波器結構電氣特性,可由調整該些共振金屬層之長度及該金屬圖案層以達到所需的使用頻段。 A filter structure improvement includes: a base body having an open surface, a short circuit surface, a top surface, a bottom surface and two side surfaces; the base body has a plurality of resonant holes, the resonant holes penetrating the base body, One end of the resonant hole is located on the open surface, and the other end is located on the short circuit surface, wherein the resonant holes have a circular hole in the elliptical hole, the length of the elliptical hole is smaller than the length of the circular hole; a plurality of resonant metal layers, And being disposed on the inner wall of the elliptical hole and the circular hole; a grounding metal layer is disposed on the short circuit surface, the top surface, the bottom surface and the two side surfaces; wherein the short circuit surface is disposed on the short circuit surface Ground metal layer and the resonant metals in the resonant holes The layer is electrically connected to form a short-circuited end, and the resonant metal layer forms an open end on the open surface; and the grounded metal layer is in an E-shaped pattern on the bottom surface, and two of the grounded metal layers in the E-shaped pattern The side has a second bare space exposed to the outside of the substrate, the two bare areas extending on the open surface; a metal pattern layer is disposed on the open surface, the metal pattern layer is a straight line segment, and the straight line segment is disposed on the side One of the resonant holes; an input electrode is disposed in one of the two bare regions; an output electrode is disposed in the other bare region; wherein the metal pattern layer and the resonance The metal layer and the grounded metal layer are formed with electrical characteristics of the filter structure coupled to each other, and the length of the resonant metal layer and the metal pattern layer can be adjusted to achieve a desired use frequency band.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW412112U (en) * 1994-06-16 2000-11-11 Murata Manufacturing Co Dielectric filter
CN1949588A (en) * 2005-10-13 2007-04-18 Tdk株式会社 Dielectric device
US20130082799A1 (en) * 2011-09-30 2013-04-04 Qualcomm Mems Technologies, Inc. Cross-sectional dilation mode resonators and resonator-based ladder filters
TWM539186U (en) * 2016-10-13 2017-04-01 Cirocomm Tech Corp Improved filter structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW412112U (en) * 1994-06-16 2000-11-11 Murata Manufacturing Co Dielectric filter
CN1949588A (en) * 2005-10-13 2007-04-18 Tdk株式会社 Dielectric device
US20130082799A1 (en) * 2011-09-30 2013-04-04 Qualcomm Mems Technologies, Inc. Cross-sectional dilation mode resonators and resonator-based ladder filters
TWM539186U (en) * 2016-10-13 2017-04-01 Cirocomm Tech Corp Improved filter structure

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