TWI629124B - Plasma device for manufacturing metallic powder and method for manufacturing metallic powder and metallic powder - Google Patents
Plasma device for manufacturing metallic powder and method for manufacturing metallic powder and metallic powder Download PDFInfo
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- 239000000843 powder Substances 0.000 title claims abstract description 96
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000000034 method Methods 0.000 title description 3
- 238000001816 cooling Methods 0.000 claims abstract description 227
- 229910052751 metal Inorganic materials 0.000 claims abstract description 144
- 239000002184 metal Substances 0.000 claims abstract description 144
- 239000012159 carrier gas Substances 0.000 claims abstract description 66
- 239000007769 metal material Substances 0.000 claims abstract description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 48
- 238000011144 upstream manufacturing Methods 0.000 claims description 37
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- 230000006698 induction Effects 0.000 claims description 13
- 238000011084 recovery Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 6
- 238000003780 insertion Methods 0.000 claims description 5
- 230000037431 insertion Effects 0.000 claims description 5
- 238000007790 scraping Methods 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims 3
- 238000001704 evaporation Methods 0.000 claims 3
- 239000012809 cooling fluid Substances 0.000 abstract description 17
- 239000002002 slurry Substances 0.000 abstract 1
- 238000005192 partition Methods 0.000 description 18
- 210000000078 claw Anatomy 0.000 description 17
- 239000007789 gas Substances 0.000 description 17
- 239000002245 particle Substances 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000012530 fluid Substances 0.000 description 4
- 230000012010 growth Effects 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/14—Making metallic powder or suspensions thereof using physical processes using electric discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder or liquid
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Plasma Technology (AREA)
Abstract
本發明係一種金屬粉末製造用電漿裝置,其具備有:被供給金屬原料的反應容器;在與前述反應容器內的金屬原料之間生成電漿,使前述金屬原料蒸發而生成金屬蒸氣的電漿炬;將用以搬送前述金屬蒸氣的載體氣體於前述反應容器內供給的載體氣體供給部;及冷卻從前述反應容器藉由前述載體氣體所移送的前述金屬蒸氣並生成金屬粉末的冷卻管,該金屬粉末製造用電漿裝置之特徵為:前述冷卻管具備有:以冷卻用流體冷卻前述冷卻管的周圍,藉此使由前述反應容器利用前述載體氣體所移送的前述金屬蒸氣及/或金屬粉末,不會直接接觸該冷卻用流體而間接地進行冷卻的間接冷卻劃分區;及接續前述間接冷卻劃分區,使冷卻用流體與前述金屬蒸氣及/或金屬粉末相接觸,並藉此直接進行冷卻的直接冷卻劃分區,而且,將前述冷卻管以其長邊方向下游側位於上方的方式,相對水平方向傾斜10~80°而設置在前述反應容器,並且將附著在前述冷卻管之內壁的附著物去除的刮具,由前述冷卻管的長邊方向下游端嵌插在前述冷卻管內。 The present invention relates to a plasma device for producing a metal powder, comprising: a reaction container to which a metal material is supplied; and a plasma generated between the metal material in the reaction container and the metal material to evaporate to generate a metal vapor. a slurry torch; a carrier gas supply unit that supplies a carrier gas for transporting the metal vapor in the reaction container; and a cooling tube that cools the metal vapor transferred from the reaction container by the carrier gas to form a metal powder. In the plasma device for producing a metal powder, the cooling pipe is provided with the metal vapor and/or metal transferred from the reaction container by the carrier gas by cooling the periphery of the cooling pipe with a cooling fluid. a powder that does not directly contact the cooling fluid to indirectly cool the indirect cooling zone; and continues the indirect cooling zone to bring the cooling fluid into contact with the metal vapor and/or metal powder, and thereby directly Cooling directly cools the divided zone, and the aforementioned cooling pipe is in the longitudinal direction of the downstream side thereof In the above manner, the scraper disposed on the inner side of the cooling pipe is inclined by 10 to 80° in the horizontal direction, and the scraper attached to the inner wall of the cooling pipe is inserted from the downstream end of the cooling pipe in the longitudinal direction. In the aforementioned cooling tube.
Description
本發明係關於製造金屬粉末的電漿裝置,尤其係關於具備有管狀冷卻管,在該冷卻管冷卻經熔融/蒸發的金屬蒸氣,藉此製造金屬粉末的電漿裝置及金屬粉末的製造方法。 The present invention relates to a plasma device for producing a metal powder, and more particularly to a plasma device and a method for producing a metal powder comprising a tubular cooling tube in which molten metal evaporated and evaporated, thereby producing a metal powder.
在電子電路或配線基板、電阻、電容器、IC封裝體等電子零件的製造中,為了形成導體覆膜或電極,而使用導電性金屬粉末。以如上所示之金屬粉末所要求的特性或性狀而言,列舉有:雜質少、平均粒徑為0.01~10μm左右的微細粉末、粒子形狀或粒徑一致、凝集少、在膏中的分散性佳、結晶性良好等。 In the production of an electronic component such as an electronic circuit or a wiring board, a resistor, a capacitor, or an IC package, a conductive metal powder is used to form a conductor film or an electrode. The properties or properties required for the metal powder as described above include fine powders having a small amount of impurities, an average particle diameter of about 0.01 to 10 μm, uniform particle shape or particle diameter, less aggregation, and dispersibility in the paste. Good, good crystallinity, etc.
近年來,伴隨著電子零件或配線基板的小型化,導體覆膜或電極的薄層化或精細間距化不斷在進展,因此迫切期望一種更為微細、球狀且高結晶性的金屬粉末。 In recent years, with the miniaturization of electronic components and wiring boards, the thinning or fine pitch of the conductor film or the electrode has been progressing. Therefore, a metal powder having a finer, spherical shape and high crystallinity is highly desired.
以製造如上所示之微細金屬粉末的方法之一者而言,利用電漿,在反應容器內,使金屬原料熔融/蒸發後,冷卻金屬蒸氣,而得到凝結的金屬粉末之電漿裝置已為人所知(參照專利文獻1、2)。在該等電漿裝置中,由於使金屬蒸氣在氣相中凝結,因此可製造雜質少、微細、球狀且結晶性高的金屬粒子。 In one of the methods for producing the fine metal powder as described above, the plasma device for melting the metal vapor after the metal material is melted/evaporated in the reaction vessel by using the plasma, and the condensed metal powder is obtained It is known (refer to Patent Documents 1 and 2). In the plasma device, since the metal vapor is condensed in the gas phase, metal particles having less impurities, fineness, spherical shape, and high crystallinity can be produced.
該等電漿裝置係均具備有長管狀冷卻管,對含有金屬蒸氣的載體氣體進行複數階段的冷卻。在例如專利文獻1中,具備有:在前述載體氣體直接混合預先加熱的熱 氣體,藉此進行冷卻的第1冷卻部;及之後藉由直接混合常溫的冷卻氣體以進行冷卻的第2冷卻部。 Each of the plasma devices is provided with a long tubular cooling tube for performing a plurality of stages of cooling of the carrier gas containing the metal vapor. For example, Patent Document 1 includes: directly mixing the preheated heat in the carrier gas The first cooling unit that cools the gas, and the second cooling unit that cools by directly mixing the cooling gas at normal temperature.
此外,在專利文獻2的電漿裝置中,係具備有:使冷卻用流體在管狀體的周圍作循環,藉此使該流體不會直接接觸前述載體氣體,而冷卻載體氣體的間接冷卻劃分區(第1冷卻部);及之後藉由在載體氣體直接混合冷卻用流體以進行冷卻的直接冷卻劃分區(第2冷卻部)。 Further, in the plasma device of Patent Document 2, the cooling fluid is circulated around the tubular body, whereby the fluid does not directly contact the carrier gas, and the indirect cooling partition region of the carrier gas is cooled. (first cooling unit); and then directly cooling the divided area (second cooling unit) by directly mixing the cooling fluid with the carrier gas to perform cooling.
尤其為後者的情形,可安定地進行核的生成、成長及結晶化,可得具備有經控制的粒徑與粒度分布的金屬粉末。 In particular, in the latter case, the formation, growth, and crystallization of the core can be carried out stably, and a metal powder having a controlled particle size and particle size distribution can be obtained.
[專利文獻1]美國專利申請公開2007/0221635號說明書 [Patent Document 1] US Patent Application Publication No. 2007/0221635
[專利文獻2]日本專利3541939號 [Patent Document 2] Japanese Patent No. 3541939
但是,在該等文獻記載的電漿裝置中,係當金屬蒸氣在冷卻管內凝結時,無法避免其一部分附著在冷卻管的內壁的情形。該附著物慢慢堆積,逐漸妨礙冷卻管內的載體氣體流動,視情形會發生閉塞冷卻管的問題。 However, in the plasma device described in these documents, when metal vapor is condensed in the cooling pipe, it is impossible to prevent a part of the metal vapor from adhering to the inner wall of the cooling pipe. The deposit gradually builds up, gradually obstructing the flow of the carrier gas in the cooling tube, and the problem of occluding the cooling tube may occur depending on the situation.
尤其,專利文獻2所記載的電漿裝置,與具備有遍及冷卻管內的全部區域且噴出冷卻用流體機構之專利文獻1的裝置相比,有附著物更容易附著在其冷卻管的上游側(第1冷卻部側)的內壁的問題。 In particular, in the plasma device described in Patent Document 2, the deposit is more likely to adhere to the upstream side of the cooling pipe than the device of Patent Document 1 in which the cooling fluid mechanism is discharged over all the regions in the cooling pipe. The problem of the inner wall of the (first cooling unit side).
以往為了去除如上所示之附著物,必須定期及/或不定期地停止電漿裝置的運轉,裝置充分變冷後再將冷卻管分解,而去除管內的附著物。 Conventionally, in order to remove the adherend as described above, it is necessary to periodically and/or irregularly stop the operation of the plasma device, and after the device is sufficiently cooled, the cooling tube is decomposed to remove the deposit in the tube.
但是,該等電漿裝置係在使電漿發生後,至可安定生成金屬蒸氣為止亦需要耗費相當多的時間。因此,為了去除附著物,除了使電漿裝置停止之後再將冷卻管分解為止所需時間、及實際附著物去除作業所需時間以外,在重新開始裝置的運轉後,還必須耗費至金屬蒸氣安定生成為止所需時間,以金屬粉末的生產效率的觀點來看,會造成問題。 However, these plasma devices also take a considerable amount of time after the generation of the plasma until the metal vapor can be stably formed. Therefore, in order to remove the deposit, in addition to the time required to decompose the cooling tube after stopping the plasma device and the time required for the actual deposit removal operation, it is necessary to consume the metal vapor after the operation of the device is restarted. The time required for the formation is a problem in terms of the production efficiency of the metal powder.
本發明之目的在解決該等問題,提供一種在具有冷卻管的金屬粉末製造用電漿裝置中,可輕易去除附著/堆積在冷卻管內壁的附著物,生產效率更佳的電漿裝置及金屬粉末的製造方法。 An object of the present invention is to solve the above problems and to provide a plasma device capable of easily removing adhering substances deposited/deposited on the inner wall of a cooling pipe in a plasma device for manufacturing a metal powder having a cooling pipe, and having a more efficient production efficiency. A method of producing a metal powder.
本發明之電漿裝置係具備有:被供給金屬原料的反應容器;在與前述反應容器內的金屬原料之間生成電漿,使前述金屬原料蒸發而生成金屬蒸氣的電漿炬;將用以搬送前述金屬蒸氣的載體氣體於前述反應容器內供給的載體氣體供給部;及冷卻前述反應容器藉由前述載體氣體所移送的前述金屬蒸氣並生成金屬粉末的冷卻管,該金屬粉末製造用電漿裝置之特徵為:前述冷卻管具備有:以冷卻用流體冷卻前述冷卻管的周圍,藉此使由前述反應容器利用前述載體氣體所移送的前述金屬蒸氣及/或金屬粉末,不會直接接觸該冷卻用流體而間接地進行 冷卻的間接冷卻劃分區;及接續前述間接冷卻劃分區,使冷卻用流體與前述金屬蒸氣及/或金屬粉末相接觸,並藉此直接進行冷卻的直接冷卻劃分區,而且,將前述冷卻管以其長邊方向下游側位於上方的方式,相對水平方向傾斜10~80°而設置在前述反應容器,並且將附著在前述冷卻管之內壁的附著物去除的刮具,由前述冷卻管的長邊方向下游端嵌插在前述冷卻管內。 The plasma apparatus of the present invention includes: a reaction vessel to which a metal raw material is supplied; a plasma torch that generates a plasma between the metal raw material in the reaction vessel and evaporates the metal raw material to generate metal vapor; a carrier gas supply unit that supplies the carrier gas of the metal vapor in the reaction container; and a cooling tube that cools the metal vapor transferred from the reaction container by the carrier gas to form a metal powder, and the plasma for producing the metal powder The apparatus is characterized in that the cooling pipe is provided with cooling the periphery of the cooling pipe with a cooling fluid, so that the metal vapor and/or metal powder transferred from the reaction vessel by the carrier gas does not directly contact the metal vapor and/or metal powder. Cooling indirectly with fluid Cooling indirect cooling partitioning zone; and continuing the aforementioned indirect cooling partitioning zone to bring the cooling fluid into contact with the metal vapor and/or metal powder, and thereby directly cooling the cooled cooling zone, and The downstream side of the longitudinal direction is located above, and is disposed in the reaction container so as to be inclined by 10 to 80° with respect to the horizontal direction, and the scraper attached to the inner wall of the cooling pipe is removed by the length of the cooling pipe. The downstream end of the side direction is inserted into the aforementioned cooling pipe.
本發明之電漿裝置係冷卻管以其長邊方向下游側位於上方的方式相對水平方向傾斜而設置在反應容器,而且,將附著‧堆積在冷卻管內壁的附著物刮落的刮具係由冷卻管的下游端被嵌插在冷卻管內,因此使該刮具在冷卻管內作往返動作及/或驅動,藉此不僅無須停止裝置運轉,即可去除附著物,亦可輕易地進行被刮落附著物的回收‧排出,可使金屬粉末的生產效率飛躍似地提升。 In the plasma device of the present invention, the cooling pipe is disposed in the reaction container so as to be inclined upward in the longitudinal direction so that the downstream side thereof is located above the horizontal direction, and the scraper attached to the inner wall of the cooling pipe is scraped off. The downstream end of the cooling pipe is inserted into the cooling pipe, so that the scraper can be reciprocated and/or driven in the cooling pipe, thereby removing the deposits without stopping the operation of the device, and can be easily performed. The recycling of the scraped deposits and the discharge of the metal powder can greatly improve the production efficiency of the metal powder.
以下一面根據具體的實施形態,一面說明本發明,惟本發明並非限定於此。 The present invention will be described below on the basis of specific embodiments, but the present invention is not limited thereto.
第1圖係顯示在與前述專利文獻2同樣的移行型電弧電漿裝置應用本發明的第1實施形態,在反應容器2的內部使金屬原料熔融/蒸發,將所生成的金屬蒸氣在冷卻管3內冷卻而凝結,藉此生成金屬粒子。 In the first embodiment of the present invention, the transitional arc plasma apparatus according to the above-described Patent Document 2 is applied to the first embodiment of the present invention. The metal material is melted and evaporated in the inside of the reaction container 2, and the generated metal vapor is placed in the cooling pipe. 3 is internally cooled and condensed, thereby generating metal particles.
此外,在以下說明中,上游側或下游側係指第1圖中的箭號所示冷卻管3的長邊方向中的方向,上方或下方係指第1圖中的箭號所示鉛直方向中的上下方向。 In the following description, the upstream side or the downstream side refers to the direction in the longitudinal direction of the cooling pipe 3 indicated by the arrow in FIG. 1 , and the upper or lower side refers to the vertical direction indicated by the arrow in FIG. 1 . Up and down direction.
此外,在本發明中,以金屬原料而言,若為含有目的金屬粉末的金屬成分的導電性物質,則沒有特別限制,除了純金屬以外,可使用含有2種以上的金屬成分的合金或複合物、混合物、化合物等。以金屬成分之一例而言,可列舉:銀、金、鎘、鈷、銅、鐵、鎳、鈀、鉑、銠、釕、鉭、鈦、鎢、鋯、鉬、鈮等。雖然沒有特別限制,但是由處理容易度來看,以金屬原料而言,以使用數mm~數十mm左右大小的粒狀或塊狀的金屬材料或合金材料為佳。 Further, in the present invention, the metal material is not particularly limited as long as it is a conductive material containing a metal component of the target metal powder, and an alloy or a composite containing two or more metal components may be used in addition to the pure metal. Things, mixtures, compounds, etc. Examples of the metal component include silver, gold, cadmium, cobalt, copper, iron, nickel, palladium, platinum, rhodium, ruthenium, iridium, titanium, tungsten, zirconium, molybdenum, niobium and the like. Although it is not particularly limited, in terms of easiness of handling, it is preferable to use a metal material or an alloy material in the form of a granular or a block having a size of about several mm to several tens of mm.
以下為易於理解,以製造鎳粉末作為金屬粉末,使用金屬鎳作為金屬原料之例來進行說明,惟本發明並非限定於此。 Hereinafter, it is easy to understand that nickel powder is used as a metal powder and metal nickel is used as a metal material. However, the present invention is not limited thereto.
金屬鎳係預先在開始裝置運轉前,先在反應容器2內準備預定量,在裝置運轉開始後,按照形成為金屬蒸氣而由反應容器2內減少的量,隨時由進料口9被補充至反應容器2內。因此,本發明之電漿裝置1係可長時間連續製造金屬粉末。 The metal nickel is prepared in advance in the reaction vessel 2 before the start of the operation of the apparatus, and is replenished from the feed port 9 at any time by the amount of reduction in the inside of the reaction vessel 2 in accordance with the amount of metal vapor formed after the start of the operation of the apparatus. Inside the reaction vessel 2. Therefore, the plasma device 1 of the present invention can continuously produce metal powder for a long period of time.
在反應容器2的上方配置有電漿炬4,透過未圖示的供給管來對電漿炬4供給電漿生成氣體。電漿炬4係將負極6作為陰極、將設在電漿炬4內部之未圖示的正極作為陽極而在發生電漿7後,將陽極移至正極5,藉此在負極6與正極5之間生成電漿7,藉由該電漿7的熱,使反應容器 2內的金屬鎳的至少一部分熔融,而生成鎳的熔液8。另外,電漿炬4係藉由電漿7的熱,使熔液8的一部分蒸發,而發生鎳蒸氣(相當於本發明之金屬蒸氣)。 A plasma torch 4 is disposed above the reaction vessel 2, and a plasma generating gas is supplied to the plasma torch 4 through a supply pipe (not shown). In the plasma torch 4, the negative electrode 6 is used as a cathode, and a positive electrode (not shown) provided inside the plasma torch 4 is used as an anode. After the plasma 7 is generated, the anode is moved to the positive electrode 5, whereby the negative electrode 6 and the positive electrode 5 are used. A plasma 7 is generated between the reactor 7 and the heat of the plasma 7 to cause the reaction vessel At least a part of the metallic nickel in 2 is melted to form a molten metal 8 of nickel. Further, the plasma torch 4 evaporates a part of the melt 8 by the heat of the plasma 7, and generates nickel vapor (corresponding to the metal vapor of the present invention).
載體氣體供給部10係將用以搬送鎳蒸氣的載體氣體供給至反應容器2內。以載體氣體而言,若所製造的金屬粉末為貴金屬,則沒有特別限制,可使用空氣、氧、水蒸氣等氧化性氣體、或氮、氬等惰性氣體、該等混合氣體等,若製造易於氧化的鎳、銅等卑金屬時,較佳為使用惰性氣體。只要沒有特別聲明,在以下說明中,係使用氮氣作為載體氣體。 The carrier gas supply unit 10 supplies a carrier gas for transporting nickel vapor into the reaction container 2 . The carrier gas is not particularly limited as long as the metal powder to be produced is a noble metal, and an oxidizing gas such as air, oxygen or water vapor, an inert gas such as nitrogen or argon, or a mixed gas thereof can be used. In the case of oxidized nickel, copper or the like, it is preferred to use an inert gas. Unless otherwise stated, in the following description, nitrogen is used as the carrier gas.
此外,在載體氣體係可視需要而混合氫、一氧化碳、甲烷、氨氣等還原性氣體、或醇類、羧酸類等有機化合物,此外,亦可為了改善/調整金屬粉末的性狀或特性,而含有氧、或其他磷或硫黃等成分。此外,生成電漿所使用的電漿生成氣體亦作為載體氣體的一部分而發揮功能。 Further, a reducing gas such as hydrogen, carbon monoxide, methane or ammonia, or an organic compound such as an alcohol or a carboxylic acid may be mixed in the carrier gas system as needed, and may be contained in order to improve/adjust the properties or characteristics of the metal powder. Oxygen, or other components such as phosphorus or sulfur. Further, the plasma generating gas used to generate the plasma also functions as a part of the carrier gas.
在反應容器2與冷卻管3的上游端(第1圖中所圖示之冷卻管上游側的端部近傍)之間設有直徑小於冷卻管3的內徑的導入口11,反應容器2與冷卻管3係透過導入口11而相連通。因此,在反應容器2內所發生之含有鎳蒸氣的載體氣體係通過導入口11而被移送至冷卻管3。 An introduction port 11 having a diameter smaller than the inner diameter of the cooling pipe 3 is provided between the reaction vessel 2 and the upstream end of the cooling pipe 3 (near the end on the upstream side of the cooling pipe shown in Fig. 1), and the reaction vessel 2 is The cooling pipes 3 are connected to each other through the inlet port 11. Therefore, the carrier gas system containing nickel vapor generated in the reaction vessel 2 is transferred to the cooling pipe 3 through the inlet port 11.
冷卻管3係具備有:將載體氣體所含有的鎳蒸氣及/或鎳粉末間接冷卻的間接冷卻劃分區IC;及將載體氣體所含有的鎳蒸氣及/或鎳粉末直接冷卻的直接冷卻劃分區DC。此外,如後所述,冷卻管3亦可另外具備有待機 用劃分區AC。 The cooling pipe 3 includes an indirect cooling partition IC that indirectly cools nickel vapor and/or nickel powder contained in the carrier gas, and a direct cooling partition that directly cools the nickel vapor and/or the nickel powder contained in the carrier gas. DC. Further, as will be described later, the cooling pipe 3 may be additionally provided with standby Use the division area AC.
在間接冷卻劃分區IC中,係使用冷卻用流體或外部加熱器等,將冷卻管3的周圍進行冷卻或加熱,且藉由控制間接冷卻劃分區IC的溫度來進行冷卻。以冷卻用流體而言,係可使用前述載體氣體或其他氣體,而且,亦可使用水、溫水、甲醇、乙醇或該等的混合物等液體。但是,由冷卻效率或成本上的觀點來看,較佳為在冷卻用流體使用水或溫水,使其在冷卻管3的周圍作循環而將冷卻管3冷卻。 In the indirect cooling partition IC, cooling or heating is performed around the cooling pipe 3 by using a cooling fluid or an external heater, and cooling is performed by controlling the temperature of the indirect cooling zone IC. As the fluid for cooling, the carrier gas or other gas may be used, and a liquid such as water, warm water, methanol, ethanol or a mixture thereof may be used. However, from the viewpoint of cooling efficiency and cost, it is preferred to use water or warm water in the cooling fluid to circulate around the cooling pipe 3 to cool the cooling pipe 3.
在間接冷卻劃分區IC中,保持高溫而被移送至冷卻管3內的載體氣體中的鎳蒸氣係藉由輻射而以較為平緩的速度予以冷卻,在經安定且均一地進行溫度控制的氣體環境中進行核的生成、成長、結晶化,藉此在載體氣體中生成粒徑一致的鎳粉末。 In the indirect cooling partition IC, the nickel vapor which is transferred to the carrier gas in the cooling pipe 3 while maintaining the high temperature is cooled by the radiation at a relatively gentle speed, and is subjected to a stable and uniform temperature control atmosphere. The formation, growth, and crystallization of the nucleus are performed to form a nickel powder having a uniform particle diameter in the carrier gas.
在直接冷卻劃分區DC中,係對由間接冷卻劃分區IC被移送而來的鎳蒸氣及/或鎳粉末,噴出或混合由未圖示的冷卻流體供給部所被供給的冷卻用流體,來進行直接冷卻。此外,在直接冷卻劃分區DC所使用的冷卻用流體可為與在間接冷卻劃分區IC所使用的冷卻用流體為相同者,亦可為不同者,但是由處理容易度或成本上的觀點來看,較佳為使用與前述載體氣體相同的氣體(在以下實施形態中為氮氣)。 In the direct cooling partition DC, the nickel vapor and/or nickel powder transferred from the indirect cooling partition IC is discharged or mixed with a cooling fluid supplied from a cooling fluid supply unit (not shown). Perform direct cooling. Further, the cooling fluid used for directly cooling the divided region DC may be the same as the cooling fluid used in the indirect cooling partition IC, or may be different, but from the viewpoint of ease of processing or cost. It is preferable to use the same gas as the carrier gas (nitrogen in the following embodiment).
使用氣體時,係與前述載體氣體同樣地,可視需要混合使用還原性氣體或有機化合物、氧、磷、硫黃等成分。此外,若冷卻用流體含有液體,該液體係在被噴霧 的狀態下被導入至冷卻管3內。 When a gas is used, a reducing gas or an organic compound, a component such as oxygen, phosphorus, or sulfur may be used in combination as needed in the same manner as the carrier gas. In addition, if the cooling fluid contains a liquid, the liquid system is sprayed In the state of being introduced into the cooling pipe 3.
在間接冷卻劃分區IC內的載體氣體中混合存在有鎳蒸氣與鎳粉末,但是與其上游側相比,下游側鎳蒸氣的比率較低。此外,依裝置,即使在直接冷卻劃分區DC內的載體氣體中,亦可混合存在鎳蒸氣與鎳粉末。但是,如上所述,核的生成、成長、結晶化係在間接冷卻劃分區IC內進行、結束為佳,因此在直接冷卻劃分區DC內的載體氣體中未含有鎳蒸氣為佳。 Nickel vapor and nickel powder are mixed in the carrier gas in the indirect cooling partition IC, but the ratio of the downstream side nickel vapor is lower than that on the upstream side. Further, depending on the apparatus, nickel vapor and nickel powder may be mixed in the carrier gas in the direct cooling partition DC. However, as described above, it is preferable that the formation, growth, and crystallization of the nucleus are performed in the indirect cooling partition IC, and it is preferable that the carrier gas in the direct cooling partition DC does not contain nickel vapor.
電漿裝置1運轉中,在上述冷卻管3中,載體氣體中的鎳粉末的一部分或來自鎳蒸氣的析出物慢慢地附著在冷卻管3的內壁,視情況形成為氧化物或其他化合物而堆積。若該等因鎳蒸氣而來的附著物的堆積更為增加時,亦有使冷卻管3的內徑縮窄,或除了成為混亂載體氣體流動的原因而對鎳粉末的粒徑或粒度分布的控制造成不良影響外,有視情形使冷卻管3內閉塞的情況。尤其,在具有間接冷卻劃分區IC的冷卻管3的上游側,發現附著物變多的傾向。 In the operation of the plasma device 1, in the cooling pipe 3, a part of the nickel powder in the carrier gas or a precipitate derived from the nickel vapor gradually adheres to the inner wall of the cooling pipe 3, and is formed as an oxide or other compound as the case may be. And stacked. If the accumulation of the deposits due to the nickel vapor is further increased, the inner diameter of the cooling tube 3 may be narrowed, or the particle size or particle size distribution of the nickel powder may be removed in addition to the flow of the chaotic carrier gas. In addition to the adverse effects of the control, the inside of the cooling pipe 3 may be closed depending on the situation. In particular, on the upstream side of the cooling pipe 3 having the indirect cooling division area IC, it is found that the deposit tends to increase.
基於後述理由,在本發明中,較佳為在冷卻管3的下游端或其近傍具備將搬送金屬粉末的載體氣體的搬送方向誘導朝與冷卻管3的長邊方向為不同的方向的誘導管。 In the present invention, it is preferable that the downstream end of the cooling pipe 3 or the vicinity thereof is provided with an induction pipe that induces a direction in which the carrier gas for transporting the metal powder is directed in a direction different from the longitudinal direction of the cooling pipe 3 . .
第1實施形態中的誘導管13係將載體氣體誘導於對冷卻管3的長邊方向呈大致正交的方向。藉由誘導管13所被誘導的載體氣體被搬送至未圖示的捕集器,在該捕集器中被分離成金屬粉末與載體氣體,而來回收金屬粉末。此外,以捕集器所分離的載體氣體亦可構成為在載 體氣體供給部10再利用。 The induction tube 13 in the first embodiment induces the carrier gas in a direction substantially perpendicular to the longitudinal direction of the cooling tube 3. The carrier gas induced by the induction tube 13 is transported to a trap (not shown), and is separated into metal powder and carrier gas in the trap to recover the metal powder. In addition, the carrier gas separated by the trap can also be configured to be loaded The body gas supply unit 10 is reused.
在此,亦可在誘導管13內或其近傍設置朝誘導方向噴出氣體的誘導氣體噴出部。藉由誘導氣體,可平順地進行載體氣體的搬送方向的轉換。以誘導氣體而言,係可使用氮氣等與前述載體氣體相同的氣體。 Here, an inducing gas ejecting portion that ejects a gas in the induction direction may be provided in the induction tube 13 or in the vicinity thereof. By inducing the gas, the transfer direction of the carrier gas can be smoothly performed. As the gas to be induced, the same gas as the carrier gas described above may be used.
本發明係為了去除附著在冷卻管3內的附著物而具有刮具,將其由前述冷卻管的下游端進行嵌插為特徵之一。 The present invention has a scraper for removing an adhering matter adhering to the cooling pipe 3, and is characterized in that it is inserted into the downstream end of the cooling pipe.
第1實施形態中的刮具20如第2圖所示,為在棒狀的軸21的一端具備有用以將附著物刮落的刮具頭22的形狀,刮具20的全長係以比冷卻管3的長邊方向的長度長為佳。在刮具20中,刮具頭22係在冷卻管3內,而且,軸21係被嵌插在設於冷卻管3之下游端的插入口31,至少其一部分被配置在冷卻管3外。 As shown in Fig. 2, the scraper 20 of the first embodiment has a shape of a scraper head 22 for scraping off the deposit at one end of the rod-shaped shaft 21, and the entire length of the scraper 20 is cooled by specific cooling. The length of the tube 3 in the longitudinal direction is preferably long. In the scraper 20, the scraper head 22 is housed in the cooling pipe 3, and the shaft 21 is inserted into the insertion port 31 provided at the downstream end of the cooling pipe 3, and at least a part thereof is disposed outside the cooling pipe 3.
在習知之具備有冷卻管的電漿裝置中,大多將捕集器設在管狀冷卻管的延長上,配置上述形狀的刮具20本身較不容易,但是較佳係藉由具備誘導管13,可在冷卻管3的延長上形成空間,而變得容易配置刮具20。但是,若不厭煩裝置複雜化,亦可不具備誘導管而配置刮具20,在本發明中,誘導管並非為必須的構成。 In a conventional plasma device equipped with a cooling tube, the trap is often disposed on the extension of the tubular cooling tube, and the scraper 20 of the above-described shape is not easy in itself, but preferably by providing the induction tube 13, A space can be formed on the extension of the cooling pipe 3, and the scraper 20 becomes easy to configure. However, if the device is not complicated, the scraper 20 may be disposed without the induction tube. In the present invention, the induction tube is not essential.
軸21在嵌插於插入口3的狀態下進行安裝,因此軸21在冷卻管3長邊方向的往返動作自如,同時以軸21的軸為中心之繞軸方向的旋動亦自如。 Since the shaft 21 is attached to the insertion port 3, the shaft 21 can freely reciprocate in the longitudinal direction of the cooling pipe 3, and the rotation of the shaft 21 about the axis of the shaft 21 is free.
此外,刮具頭22的徑向(相對軸21呈正交的方向)的最大長度係被設定為小於冷卻管3內的最小內徑。 Further, the maximum length of the radial direction of the scraper head 22 (the direction orthogonal to the axis 21) is set to be smaller than the minimum inner diameter in the cooling tube 3.
在如上述所構成的第1實施形態中,在定期或不定期去除附著物時,操作冷卻管3外的軸21,使軸21於冷卻管3的長邊方向往返動作,並且以繞軸方向旋動。此時的軸21的操作係可為藉由人的手所為者,亦可為藉由馬達等驅動機構所為者。接著,刮具頭22對冷卻管3內壁的附著物施加物理性的力,可有效地刮落附著物。 In the first embodiment configured as described above, when the deposit is periodically or irregularly removed, the shaft 21 outside the cooling pipe 3 is operated to reciprocate the shaft 21 in the longitudinal direction of the cooling pipe 3, and in the direction around the axis Rotate. The operation of the shaft 21 at this time may be performed by a human hand or by a driving mechanism such as a motor. Next, the scraper head 22 applies a physical force to the deposit on the inner wall of the cooling pipe 3, and the deposit can be effectively scraped off.
第2圖(A)~(C)係第1實施形態的刮具頭22的詳細圖示,第2圖(B)係由第2圖(A)的II-II線所觀看的箭頭示意圖,第2圖(C)係由第2圖(B)的IIA-IIA’線所觀看的箭頭示意圖。 2(A) to (C) are detailed views of the scraper head 22 of the first embodiment, and Fig. 2(B) is a schematic view of an arrow viewed by line II-II of Fig. 2(A). Fig. 2(C) is a schematic view of an arrow viewed from line IIA-IIA' of Fig. 2(B).
如圖所示,刮具頭22係具有第1刮具頭22a、第2刮具頭22b、突出爪27,第1刮具頭22a與第2刮具頭22b均呈具有3支輪輻的環狀。 As shown in the figure, the scraper head 22 has a first scraper head 22a, a second scraper head 22b, and a projecting claw 27, and each of the first scraper head 22a and the second scraper head 22b has a ring having three spokes. shape.
此外,第1刮具頭22a、第2刮具頭22b係分別具備有齒角不同的鋸齒形狀的爪部23a及23b。因此,若使刮具頭22在冷卻管3的上游側移動,首先藉由第1刮具頭22a的爪部23a大略地刮落冷卻管3內壁的附著物,接著藉由第2刮具頭22a的爪部23b,來刮落所殘留的附著物。 Further, each of the first scraper head 22a and the second scraper head 22b is provided with claw portions 23a and 23b having zigzag shapes having different tooth angles. Therefore, when the scraper head 22 is moved on the upstream side of the cooling pipe 3, the adhering matter of the inner wall of the cooling pipe 3 is roughly scraped off by the claw portion 23a of the first scraper head 22a, and then the second scraper is used. The claw portion 23b of the head 22a scrapes off the remaining deposit.
此外,在與導入口11相對向的刮具頭22上的位置設有突出爪27,因此亦可視需要而使刮具頭22在冷卻管3的上游端進行旋動及/或往返動作,藉此去除附著在導入口11及其周圍的附著物。 Further, the projecting claws 27 are provided at positions on the scraper head 22 opposed to the introduction port 11, so that the scraper head 22 can be rotated and/or reciprocated at the upstream end of the cooling pipe 3 as needed. This removes the adhering matter attached to the inlet port 11 and its surroundings.
刮具20的材質若具備耐熱性即可,較佳為例如以SUS或英高鎳(Inconel)等形成。此外,軸21與刮具頭22可為一體成型者,亦可為接合不同個體者。此外,軸21 與刮具頭22若為可一體進行動作,則並不一定必須被固定,亦可透過例如包含彈簧等彈性體的減振器機構而連接。 The material of the scraper 20 is preferably heat-resistant, and is preferably formed of, for example, SUS or Inconel. In addition, the shaft 21 and the scraper head 22 may be integrally formed, or may be joined to different individuals. In addition, the shaft 21 If the scraper head 22 is integrally movable, it does not necessarily have to be fixed, and may be connected through, for example, a damper mechanism including an elastic body such as a spring.
在未進行附著物的去除作業時,例如在製造金屬粉末時,使刮具頭22在冷卻管3的下游側待機為宜。 When the deposit removal operation is not performed, for example, when the metal powder is produced, it is preferable that the scraper head 22 stands by on the downstream side of the cooling pipe 3.
刮具頭22的待機位置若為比金屬粉末的成長大致結束的間接冷卻劃分區IC(第1冷卻部)更為下游側即可,較佳為在下游端附近。將刮具頭22的待機位置設為直接冷卻劃分區DC之後的下游側,藉此可抑制附著物附著在刮具頭22,此外,可減低由於刮具頭22在載體氣體發生亂流,而對金屬粉末的粒徑或粒度分布造成不良影響的風險。 The standby position of the scraper head 22 may be more downstream than the indirect cooling partition IC (first cooling unit) in which the growth of the metal powder is substantially completed, and is preferably in the vicinity of the downstream end. The standby position of the scraper head 22 is set to the downstream side after the direct cooling of the divided area DC, whereby the adhering matter can be suppressed from adhering to the scraper head 22, and in addition, the turbulent flow of the carrier gas by the scraper head 22 can be reduced. The risk of adversely affecting the particle size or particle size distribution of the metal powder.
在第1實施形態中,在冷卻管3設置待機用劃分區AC,在去除作業時以外時使刮具頭22在待機用劃分區AC待機。 In the first embodiment, the standby partition area AC is provided in the cooling pipe 3, and the scraper head 22 is placed in the standby division area AC when the work is not performed.
但是,待機用劃分區AC並非必須設置,如後所述,亦可使其在直接冷卻劃分區DC待機。此外,若將刮具頭22以附著物不易附著的材質或形狀的構件所構成,或形成為不易產生載體氣體之亂流的情況時,亦可在更上游側使刮具頭22待機。 However, the standby division area AC is not necessarily provided, and it may be made to stand by in the direct cooling division area DC as will be described later. Further, when the scraper head 22 is formed of a material or a shape member to which the attached matter is less likely to adhere, or when the turbulent flow of the carrier gas is less likely to occur, the scraper head 22 may be placed on the upstream side.
本發明之電漿裝置1係將冷卻管3,以其下游側位於上方的方式相對水平方向以10~80°的範圍傾斜為特徵之一。 The plasma device 1 of the present invention is characterized in that the cooling pipe 3 is inclined in a range of 10 to 80° with respect to the horizontal direction so that the downstream side thereof is located above.
在習知具備有冷卻管的電漿裝置中,大部分的情形為朝水平方向或鉛直方向設置冷卻管,但是若以水平方 向設置冷卻管時,由於以刮具20所刮落的附著物會積存在冷卻管內,因此必須重新設置回收所積存附著物的機構。 In a conventional plasma device equipped with a cooling pipe, most of the cases are to provide a cooling pipe in a horizontal direction or a vertical direction, but if it is horizontal When the cooling pipe is installed, since the deposit scraped off by the scraper 20 is accumulated in the cooling pipe, it is necessary to newly provide a mechanism for recovering the accumulated deposit.
若以鉛直方向設置冷卻管時,雖然不會有刮落的附著物積存在冷卻管內的情形,但是若為鉛直方向朝下(冷卻管的下游側為下方)的冷卻管,會有刮落的附著物混入作為目的物之金屬粉末中而有使金屬粉末的品質降低之虞。此外,若為鉛直方向朝上(冷卻管的下游側為上方)的冷卻管,會有刮落的附著物倒回至反應容器內,使熔液溫度降低、或雜質濃度變高之虞。 When the cooling pipe is installed in the vertical direction, the scraped deposit does not accumulate in the cooling pipe, but if it is a cooling pipe with the vertical direction facing downward (the downstream side of the cooling pipe is below), there will be scraping. The adhering matter is mixed into the metal powder as the target material to reduce the quality of the metal powder. Further, in the cooling pipe which is directed upward in the vertical direction (the downstream side of the cooling pipe is upward), the scraped deposits are returned to the reaction vessel, and the melt temperature is lowered or the impurity concentration is increased.
本發明係具備上述刮具20,同時將冷卻管3相對水平方向在10~80°的範圍傾斜來作設置,藉此無須特別重新設置回收機構,即可將以刮具20所刮落的附著物集中在冷卻管3的上游側。較佳的傾斜角度為20~70°,更佳的傾斜角度為30~60°。 According to the present invention, the scraper 20 is provided, and the cooling pipe 3 is inclined in a range of 10 to 80° with respect to the horizontal direction, whereby the scraping by the scraper 20 can be performed without particularly resetting the recovery mechanism. The matter is concentrated on the upstream side of the cooling pipe 3. The preferred tilt angle is 20 to 70 degrees, and the preferred tilt angle is 30 to 60 degrees.
第1圖所示之第1實施形態的冷卻管3係以其下游側位於上方的方式相對水平方向傾斜45°來作設置。 The cooling pipe 3 of the first embodiment shown in Fig. 1 is provided so as to be inclined by 45° with respect to the horizontal direction so that the downstream side thereof is located above.
藉由刮具20所被刮落的附著物係無關於未具備特別的回收機構,均僅以刮具20的往返動作與重力而被集中在冷卻管3的上游側。 The deposits scraped off by the scraper 20 are concentrated on the upstream side of the cooling duct 3 only by the reciprocating motion of the scraper 20 and the gravity, without any special recovery mechanism.
此外,在第1實施形態中,反應容器2與冷卻管3係透過直徑小於冷卻管3內徑的導入口11而相連通,因此所被集中的附著物不易倒回至反應容器2內。如上所示,在本發明中,較佳為冷卻管3的上游端透過直徑小於冷卻管3內徑的導入口11而與反應容器1相連通。 Further, in the first embodiment, since the reaction container 2 and the cooling pipe 3 communicate with each other through the introduction port 11 having a diameter smaller than the inner diameter of the cooling pipe 3, the concentrated deposits are less likely to be poured back into the reaction container 2. As described above, in the present invention, it is preferable that the upstream end of the cooling pipe 3 communicates with the reaction vessel 1 through the introduction port 11 having a diameter smaller than the inner diameter of the cooling pipe 3.
此外,在第1實施形態中,在冷卻管3的上游側具備有將附著物朝冷卻管3外排出的開口部32。若在具有冷卻流體供給部(未圖示)的直接冷卻劃分區DC設置開口部32,由於冷卻流體供給部的構成複雜化,因此開口部32設在間接冷卻劃分區IC為佳。 Further, in the first embodiment, the upstream side of the cooling pipe 3 is provided with an opening 32 for discharging the deposit to the outside of the cooling pipe 3. When the opening 32 is provided in the direct cooling partition DC having the cooling fluid supply unit (not shown), the configuration of the cooling fluid supply unit is complicated, and therefore it is preferable that the opening 32 is provided in the indirect cooling division area IC.
在開口部32設有以不會與冷卻管3的內壁產生階差的方式所形成的開閉扉33,僅在附著物去除作業時被開放。藉此,在一般的金屬粉末製造時,可儘量抑制在載體氣體發生亂流。 The opening 32 is provided with an opening/closing jaw 33 formed so as not to cause a step difference with the inner wall of the cooling pipe 3, and is opened only during the attachment removing operation. Thereby, in the production of a general metal powder, turbulence in the carrier gas can be suppressed as much as possible.
連結部34係以包圍開閉扉33的方式設置,安裝有可對連結部34進行安裝卸脫的回收容器35。在進行附著物去除作業時,開閉扉33為開放,附著物係由開口部32朝冷卻管3外排出,並藉回收容器35回收。 The connecting portion 34 is provided to surround the opening and closing jaws 33, and a recovery container 35 that can attach and detach the connecting portion 34 is attached. When the deposit removal operation is performed, the opening and closing jaws 33 are opened, and the adhering substances are discharged from the opening 32 to the outside of the cooling tube 3, and are collected by the recovery container 35.
第3圖及第4圖係顯示第2實施形態者,圖中,對於與第1實施形態相同的部位係標註與第1實施形態相同的元件符號,以下省略說明。 In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals as those in the first embodiment, and the description thereof will be omitted below.
在第2實施形態中,電漿裝置101的冷卻管103係以其下游側位於上方的方式相對水平方向傾斜70°而設置。此外,開閉扉133係沿著冷卻管103的外壁來進行滑動的拉門型式。 In the second embodiment, the cooling pipe 103 of the plasma device 101 is provided so as to be inclined by 70° with respect to the horizontal direction so that the downstream side thereof is located above. Further, the opening and closing crucible 133 is a sliding door type that slides along the outer wall of the cooling pipe 103.
第3圖(B)係由第3圖(A)的III-III線所觀看的箭頭示意圖,如該圖所示,在第2實施形態中,彎曲的誘導管113與冷卻管103的下游端面連結,藉此將含有金屬粉末之載體氣體的搬送方向誘導至與冷卻管103的長邊方向為不 同的方向。 Fig. 3(B) is a schematic view of an arrow viewed from the line III-III of Fig. 3(A). As shown in the figure, in the second embodiment, the curved induction tube 113 and the downstream end surface of the cooling tube 103 are shown. By connecting, the conveyance direction of the carrier gas containing the metal powder is induced to be not in the longitudinal direction of the cooling pipe 103. The same direction.
第4圖(A)~(E)係第2實施形態的刮具頭122的詳細圖,第4圖(B)係由第4圖(A)的IV-IV線所觀看的箭頭示意圖,第4圖(C)係由第4圖(B)的IVA-IVA’線所觀看的箭頭示意圖,第4圖(D)及第4圖(E)係由第4圖(B)的IVB-IVB’線所觀看的箭頭示意圖。 4(A) to 6(E) are detailed views of the scraper head 122 of the second embodiment, and Fig. 4(B) is a schematic view of the arrow viewed from line IV-IV of Fig. 4(A), Figure 4 (C) is a schematic view of the arrow viewed from the line IVA-IVA' of Figure 4 (B), and Figure 4 (D) and Figure 4 (E) are the IVB-IVB of Figure 4 (B) 'The arrow diagram of the line.
如第4圖(A)所示,在第2實施形態中刮具120的一端部附近具備有用以使藉由人的手所為之軸121的操作容易的手把128。 As shown in Fig. 4(A), in the second embodiment, the handlebar 128 is provided in the vicinity of one end portion of the scraper 120 so that the operation of the shaft 121 by the human hand is easy.
此外,如第4圖(B)~第4圖(E)所示,刮具頭122係呈由:以軸121為中心以放射狀延伸的4支輪輻、突出長度不同的2個爪部125、126、及環狀爪部124所構成的形狀,刮具頭122的外徑形成為比冷卻管103的內徑稍微小。 Further, as shown in FIGS. 4(B) to 4(E), the scraper head 122 is composed of four spokes radially extending around the shaft 121 and two claw portions 125 having different projecting lengths. The shape of the annular claw portion 124 is 126, and the outer diameter of the scraper head 122 is formed to be slightly smaller than the inner diameter of the cooling pipe 103.
此外,如第3圖(A)所示,在冷卻管103的下游端具備導引刮具120作往返移動時之動作的軸導件140,在本實施形態中,刮具120係被嵌插在軸導件140的插入孔131。 Further, as shown in Fig. 3(A), the downstream end of the cooling pipe 103 is provided with a shaft guide 140 for guiding the operation of the scraper 120 for reciprocating movement. In the present embodiment, the scraper 120 is inserted. In the insertion hole 131 of the shaft guide 140.
在第2實施形態中當去除附著物時,以人的手操作手把128,而使刮具120旋動及/或往返動作。 In the second embodiment, when the attached matter is removed, the handlebar 128 is operated by a human hand, and the scraper 120 is rotated and/or reciprocated.
此外,刮具頭122係具有3種爪部,因此當刮具頭122朝向冷卻管103的上游側移動時,首先藉由最突出的第1突出爪125,大略刮落附著物,接著,藉由第2突出爪126與環狀爪部124可沒有遺漏地刮落殘留的附著物,而可以較小的力有效率地去除附著物。 Further, since the scraper head 122 has three kinds of claw portions, when the scraper head 122 moves toward the upstream side of the cooling pipe 103, the attached object is first scraped off by the most protruding first projecting claw 125, and then borrowed. The second projecting claws 126 and the annular claw portions 124 can scrape off the remaining deposits without missing, and the deposits can be efficiently removed with a small force.
第5圖及第6圖係顯示第3實施形態者,圖中,對於與第1~2實施形態相同的部位係標註與第1~2實施形態相同的元件符號,以下省略說明。 In the fifth embodiment and the sixth embodiment, the same components as those in the first to the second embodiments are denoted by the same reference numerals, and the description thereof will be omitted below.
在第3實施形態中,電漿裝置201的冷卻管203係以其下游側位於上方的方式相對水平方向傾斜20°來作設置。在本實施形態中,誘導管213係其剖面形狀或直徑與冷卻管203大致相同,由冷卻管203的下游端連續彎曲,並藉此將含有金屬粉末的載體氣體之搬送方向誘導至與冷卻管203的長邊方向為不同的方向。 In the third embodiment, the cooling pipe 203 of the plasma device 201 is disposed so as to be inclined by 20° with respect to the horizontal direction so that the downstream side thereof is located above. In the present embodiment, the induction tube 213 has a cross-sectional shape or a diameter substantially the same as that of the cooling pipe 203, and is continuously curved by the downstream end of the cooling pipe 203, thereby inducing the conveying direction of the carrier gas containing the metal powder to the cooling pipe. The longitudinal direction of 203 is a different direction.
在本實施形態中,未具備待機用劃分區AC,刮具頭222係在直接冷卻劃分區DC待機。 In the present embodiment, the standby partition area AC is not provided, and the scraper head 222 stands by in the direct cooling divided area DC.
此外,在本實施形態中,由於冷卻管203的傾斜角度為較平緩的20°,因此在反應容器2與冷卻管203之間並未設置導入口。 Further, in the present embodiment, since the inclination angle of the cooling pipe 203 is relatively gentle 20°, the introduction port is not provided between the reaction container 2 and the cooling pipe 203.
在冷卻管203的上游設有開閉扉33,以覆蓋該開閉扉33的方式可安裝卸脫的回收容器235未透過連結部而直接被安裝在冷卻管203。在回收容器235的內部設有區隔板236,在開閉扉33開放時,藉由流入回收容器235的載體氣體,可抑制回收容器235內的附著物倒回至冷卻管203內。 An opening/closing port 33 is provided upstream of the cooling pipe 203, and the unloading recovery container 235 is attached to the cooling pipe 203 without being transmitted through the connection portion so as to cover the opening and closing port 33. A partition plate 236 is provided inside the recovery container 235. When the opening/closing port 33 is opened, the carrier gas flowing into the recovery container 235 can prevent the deposit in the recovery container 235 from flowing back into the cooling pipe 203.
被嵌插在軸導件140之軸221的一端係與刮具驅動部240連接,刮具驅動部240係具備有一面使刮具220旋動,一面朝向長邊方向往返動作的驅動機構(未圖示)。 One end of the shaft 221 that is inserted into the shaft guide 140 is connected to the scraper drive unit 240, and the scraper drive unit 240 is provided with a drive mechanism that reciprocates in the longitudinal direction while the scraper 220 is rotated. Graphic).
第6圖(A)~(C)係第3實施形態的刮具頭222的詳細圖,第6圖(B)係由第6圖(A)的VI-VI線所觀看的箭頭示意 圖,第6圖(C)係由第6圖(B)的VIA-VIA’線所觀看的箭頭示意圖。 Fig. 6(A) to Fig. 6(C) are detailed views of the scraper head 222 of the third embodiment, and Fig. 6(B) is an arrow viewed by line VI-VI of Fig. 6(A). Fig. 6(C) is a schematic view of an arrow viewed by the line VIA-VIA' of Fig. 6(B).
第6圖(A)~(C)所示,第3實施形態中的刮具220係具有拱頂形狀的刮具頭222。如圖所示,刮具頭222係由軸221的一端附近延伸的4支弧狀輪輻與環狀爪部223相連結。 As shown in Fig. 6 (A) to (C), the scraper 220 in the third embodiment has a dome-shaped scraper head 222. As shown, the scraper head 222 is coupled to the annular claw portion 223 by four arcuate spokes extending near one end of the shaft 221.
在本發明中包含其他各種變形例。 Various other modifications are included in the present invention.
以一例而言,刮具頭若可去除附著物,則並不一定需要爪部,對於刮具頭或爪部的形狀、個數亦沒有限制。 For example, if the scraper head can remove the attached matter, the claw portion is not necessarily required, and the shape and the number of the scraper head or the claw portion are not limited.
若在刮具頭內部或軸內部設置使水等流體循環的水冷機構,可抑制因刮具的熱所造成的變形。 If a water-cooling mechanism that circulates a fluid such as water is provided inside the scraper head or inside the shaft, deformation due to heat of the scraper can be suppressed.
對於設在冷卻管的開口部的位置或個數亦沒有限制,可因應冷卻管的傾斜或刮具的形狀等來作適當變更。 The position or the number of the openings provided in the cooling pipe is not limited, and may be appropriately changed depending on the inclination of the cooling pipe or the shape of the scraper.
此外,誘導管的形狀若可形成在冷卻管的延長上配置刮具的空間即可,除了上述例以外,亦可為例如S字狀、曲柄狀、螺旋狀。 Further, the shape of the induction tube may be formed in a space in which the scraper is disposed on the extension of the cooling tube, and may be, for example, an S-shape, a crank shape, or a spiral shape in addition to the above examples.
1、101、201‧‧‧電漿裝置 1, 101, 201‧‧‧ plasma device
2‧‧‧反應容器 2‧‧‧Reaction container
3、103、203‧‧‧冷卻管 3, 103, 203‧‧‧ cooling tube
4‧‧‧電漿炬 4‧‧‧Electric torch
5‧‧‧正極 5‧‧‧ positive
6‧‧‧負極 6‧‧‧negative
7‧‧‧電漿 7‧‧‧ Plasma
8‧‧‧熔液 8‧‧‧ melt
9‧‧‧進料口 9‧‧‧ Feed inlet
10‧‧‧載體氣體供給部 10‧‧‧Carrier Gas Supply Department
11‧‧‧導入口 11‧‧‧Import
13、113、213‧‧‧誘導管 13, 113, 213‧‧‧ induction tube
20、120、220‧‧‧刮具 20, 120, 220‧‧‧ scrapers
21、121、221‧‧‧軸 21, 121, 221‧‧
22、22a、22b、122、222‧‧‧刮具頭 22, 22a, 22b, 122, 222‧‧‧ scraper head
23a、23b、223‧‧‧爪部 23a, 23b, 223‧‧‧ claws
27、125、126‧‧‧突出爪 27, 125, 126‧‧ ‧ protruding claws
31‧‧‧插入口 31‧‧‧ insertion port
32‧‧‧開口部 32‧‧‧ openings
33、133‧‧‧開閉扉 33, 133‧‧‧ Open and close
34‧‧‧連結部 34‧‧‧Connecting Department
35、235‧‧‧回收容器 35, 235‧‧ ‧ recycling container
124‧‧‧環狀爪部 124‧‧‧Ringed claws
128‧‧‧手把 128‧‧‧handle
131‧‧‧插入孔 131‧‧‧Insert hole
140‧‧‧軸導件 140‧‧‧Axis guides
236‧‧‧區隔板 236‧‧ ‧ partition
240‧‧‧刮具驅動部 240‧‧‧Scraper drive department
AC‧‧‧待機用劃分區 AC‧‧‧Standby area
DC‧‧‧直接冷卻劃分區 DC‧‧‧Direct cooling zone
IC‧‧‧間接冷卻劃分區 IC‧‧‧Indirect cooling zone
第1圖係顯示第1實施形態之電漿裝置的圖。 Fig. 1 is a view showing a plasma device according to a first embodiment.
第2圖係顯示第1實施形態之刮具的圖。 Fig. 2 is a view showing the scraper of the first embodiment.
第3圖係顯示第2實施形態之電漿裝置的圖。 Fig. 3 is a view showing the plasma device of the second embodiment.
第4圖係顯示第2實施形態之刮具的圖。 Fig. 4 is a view showing the scraper of the second embodiment.
第5圖係顯示第3實施形態之電漿裝置的圖。 Fig. 5 is a view showing a plasma device according to a third embodiment.
第6圖係顯示第3實施形態之刮具的圖。 Fig. 6 is a view showing the scraper of the third embodiment.
Claims (21)
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| JP2011-140098 | 2011-06-24 | ||
| JP2011140098A JP5824906B2 (en) | 2011-06-24 | 2011-06-24 | Plasma device for producing metal powder and method for producing metal powder |
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| JP (1) | JP5824906B2 (en) |
| KR (1) | KR101345145B1 (en) |
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| JP5821579B2 (en) * | 2011-12-01 | 2015-11-24 | 昭栄化学工業株式会社 | Plasma equipment for metal powder production |
| JP5817636B2 (en) | 2012-04-20 | 2015-11-18 | 昭栄化学工業株式会社 | Method for producing metal powder |
| JP5982673B2 (en) * | 2013-03-29 | 2016-08-31 | 株式会社栗本鐵工所 | Ultrafine particle production equipment |
| CN106457389B (en) * | 2014-06-20 | 2018-07-03 | 昭荣化学工业株式会社 | Carbon-coated metal powder, conductive paste containing carbon-coated metal powder, and laminated electronic component using same |
| CN104400006B (en) * | 2014-12-16 | 2017-02-22 | 中国科学院合肥物质科学研究院 | Device and process for preparing superfine uranium powder |
| KR101866216B1 (en) * | 2016-03-23 | 2018-06-14 | (주)플라즈마텍 | Apparatus of manufacturing nano powder |
| CN107030292A (en) * | 2017-05-03 | 2017-08-11 | 江苏天楹环保能源成套设备有限公司 | A kind of multistage cooling prepares the plasma atomising device of metal dust |
| US11878915B2 (en) * | 2018-03-30 | 2024-01-23 | Kanto Denka Kogyo Co., Ltd. | Production method and production apparatus for molybdenum hexafluoride |
| CN110834090A (en) * | 2019-12-13 | 2020-02-25 | 黑龙江省科学院高技术研究院 | Metal powder shaping, refining and purifying device and method |
| JP7380432B2 (en) * | 2020-06-02 | 2023-11-15 | 株式会社ニコン | Mist generator, thin film manufacturing device, and thin film manufacturing method |
| CN214184130U (en) * | 2021-01-08 | 2021-09-14 | 江苏博迁新材料股份有限公司 | Defective product recovery structure in forming process of preparing ultrafine powder particles |
| CN114131033B (en) * | 2021-12-03 | 2024-11-26 | 上海镁源动力科技有限公司 | A device and method for preparing metal powder |
| KR102897095B1 (en) | 2022-08-29 | 2025-12-09 | (주)선영시스텍 | Centrifugal Spraying Apparatus |
| KR102465825B1 (en) * | 2022-09-06 | 2022-11-09 | 이용복 | Apparatus for manufacturing metal power using thermal plasma and its manufacturing method |
| CN115770882A (en) * | 2022-11-02 | 2023-03-10 | 杭州新川新材料有限公司 | Method and device for manufacturing superfine spherical metal powder |
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| TW201306971A (en) | 2013-02-16 |
| CN104209528A (en) | 2014-12-17 |
| CN104148659A (en) | 2014-11-19 |
| KR101345145B1 (en) | 2013-12-26 |
| JP5824906B2 (en) | 2015-12-02 |
| CN102837002A (en) | 2012-12-26 |
| CN104148660A (en) | 2014-11-19 |
| KR20130001129A (en) | 2013-01-03 |
| CN104209528B (en) | 2018-01-16 |
| CN104148660B (en) | 2017-04-12 |
| CN102837002B (en) | 2016-01-20 |
| JP2013007096A (en) | 2013-01-10 |
| CN104148659B (en) | 2017-04-12 |
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