TWI626337B - Hard gold plating solution - Google Patents
Hard gold plating solution Download PDFInfo
- Publication number
- TWI626337B TWI626337B TW105143297A TW105143297A TWI626337B TW I626337 B TWI626337 B TW I626337B TW 105143297 A TW105143297 A TW 105143297A TW 105143297 A TW105143297 A TW 105143297A TW I626337 B TWI626337 B TW I626337B
- Authority
- TW
- Taiwan
- Prior art keywords
- gold
- gold plating
- plating solution
- solution
- hard
- Prior art date
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- 239000010931 gold Substances 0.000 title claims abstract description 237
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 237
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 225
- 238000007747 plating Methods 0.000 title claims abstract description 173
- 150000003839 salts Chemical class 0.000 claims abstract description 44
- 230000005484 gravity Effects 0.000 claims abstract description 39
- 238000001556 precipitation Methods 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000005275 alloying Methods 0.000 claims abstract description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 25
- 239000003795 chemical substances by application Substances 0.000 claims description 22
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- -1 gold ion Chemical class 0.000 claims description 11
- 150000001868 cobalt Chemical class 0.000 claims description 8
- 150000002815 nickel Chemical class 0.000 claims description 8
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 6
- 238000005868 electrolysis reaction Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 144
- 230000008021 deposition Effects 0.000 description 29
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 27
- 238000012360 testing method Methods 0.000 description 17
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 10
- 235000015165 citric acid Nutrition 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 7
- 239000003112 inhibitor Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 6
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 235000019253 formic acid Nutrition 0.000 description 5
- 239000001508 potassium citrate Substances 0.000 description 5
- 229960002635 potassium citrate Drugs 0.000 description 5
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 5
- 235000011082 potassium citrates Nutrition 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229960003975 potassium Drugs 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 3
- 230000009194 climbing Effects 0.000 description 3
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 3
- 229940044175 cobalt sulfate Drugs 0.000 description 3
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 3
- 229910000856 hastalloy Inorganic materials 0.000 description 3
- 239000001630 malic acid Substances 0.000 description 3
- 235000011090 malic acid Nutrition 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- SDKPSXWGRWWLKR-UHFFFAOYSA-M sodium;9,10-dioxoanthracene-1-sulfonate Chemical compound [Na+].O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)[O-] SDKPSXWGRWWLKR-UHFFFAOYSA-M 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 235000011054 acetic acid Nutrition 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 239000006172 buffering agent Substances 0.000 description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 2
- INDBQWVYFLTCFF-UHFFFAOYSA-L cobalt(2+);dithiocyanate Chemical compound [Co+2].[S-]C#N.[S-]C#N INDBQWVYFLTCFF-UHFFFAOYSA-L 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 description 2
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- XRLUJVFOGKUSMQ-ZVGUSBNCSA-L (2r,3r)-2,3-dihydroxybutanedioate;nickel(2+) Chemical compound [Ni+2].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O XRLUJVFOGKUSMQ-ZVGUSBNCSA-L 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- JKFYKCYQEWQPTM-UHFFFAOYSA-N 2-azaniumyl-2-(4-fluorophenyl)acetate Chemical compound OC(=O)C(N)C1=CC=C(F)C=C1 JKFYKCYQEWQPTM-UHFFFAOYSA-N 0.000 description 1
- UPPLJLAHMKABPR-UHFFFAOYSA-H 2-hydroxypropane-1,2,3-tricarboxylate;nickel(2+) Chemical compound [Ni+2].[Ni+2].[Ni+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O UPPLJLAHMKABPR-UHFFFAOYSA-H 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910021503 Cobalt(II) hydroxide Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- PQUCIEFHOVEZAU-UHFFFAOYSA-N Diammonium sulfite Chemical compound [NH4+].[NH4+].[O-]S([O-])=O PQUCIEFHOVEZAU-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 229910021612 Silver iodide Inorganic materials 0.000 description 1
- DWAQJAXMDSEUJJ-UHFFFAOYSA-M Sodium bisulfite Chemical compound [Na+].OS([O-])=O DWAQJAXMDSEUJJ-UHFFFAOYSA-M 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 235000013877 carbamide Nutrition 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 229940011182 cobalt acetate Drugs 0.000 description 1
- 229910021446 cobalt carbonate Inorganic materials 0.000 description 1
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 1
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 description 1
- SFOSJWNBROHOFJ-UHFFFAOYSA-N cobalt gold Chemical compound [Co].[Au] SFOSJWNBROHOFJ-UHFFFAOYSA-N 0.000 description 1
- 229910001981 cobalt nitrate Inorganic materials 0.000 description 1
- 229910000152 cobalt phosphate Inorganic materials 0.000 description 1
- MPMSMUBQXQALQI-UHFFFAOYSA-N cobalt phthalocyanine Chemical compound [Co+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 MPMSMUBQXQALQI-UHFFFAOYSA-N 0.000 description 1
- ZOTKGJBKKKVBJZ-UHFFFAOYSA-L cobalt(2+);carbonate Chemical compound [Co+2].[O-]C([O-])=O ZOTKGJBKKKVBJZ-UHFFFAOYSA-L 0.000 description 1
- ZBDSFTZNNQNSQM-UHFFFAOYSA-H cobalt(2+);diphosphate Chemical compound [Co+2].[Co+2].[Co+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O ZBDSFTZNNQNSQM-UHFFFAOYSA-H 0.000 description 1
- AMFIJXSMYBKJQV-UHFFFAOYSA-L cobalt(2+);octadecanoate Chemical compound [Co+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O AMFIJXSMYBKJQV-UHFFFAOYSA-L 0.000 description 1
- MULYSYXKGICWJF-UHFFFAOYSA-L cobalt(2+);oxalate Chemical compound [Co+2].[O-]C(=O)C([O-])=O MULYSYXKGICWJF-UHFFFAOYSA-L 0.000 description 1
- SCNCIXKLOBXDQB-UHFFFAOYSA-K cobalt(3+);2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [Co+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O SCNCIXKLOBXDQB-UHFFFAOYSA-K 0.000 description 1
- WEZJBAOYGIDDLB-UHFFFAOYSA-N cobalt(3+);borate Chemical compound [Co+3].[O-]B([O-])[O-] WEZJBAOYGIDDLB-UHFFFAOYSA-N 0.000 description 1
- QAHREYKOYSIQPH-UHFFFAOYSA-L cobalt(II) acetate Chemical compound [Co+2].CC([O-])=O.CC([O-])=O QAHREYKOYSIQPH-UHFFFAOYSA-L 0.000 description 1
- ASKVAEGIVYSGNY-UHFFFAOYSA-L cobalt(ii) hydroxide Chemical compound [OH-].[OH-].[Co+2] ASKVAEGIVYSGNY-UHFFFAOYSA-L 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- KULKYMWUUXTKOR-UHFFFAOYSA-N diazanium hydrogen peroxide sulfite Chemical compound S(=O)([O-])[O-].[NH4+].OO.[NH4+] KULKYMWUUXTKOR-UHFFFAOYSA-N 0.000 description 1
- VPDQDJMGUTZZIT-UHFFFAOYSA-N ethene gold(3+) Chemical group [Au+3].C=C VPDQDJMGUTZZIT-UHFFFAOYSA-N 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- NALMPLUMOWIVJC-UHFFFAOYSA-N n,n,4-trimethylbenzeneamine oxide Chemical compound CC1=CC=C([N+](C)(C)[O-])C=C1 NALMPLUMOWIVJC-UHFFFAOYSA-N 0.000 description 1
- GEMHFKXPOCTAIP-UHFFFAOYSA-N n,n-dimethyl-n'-phenylcarbamimidoyl chloride Chemical compound CN(C)C(Cl)=NC1=CC=CC=C1 GEMHFKXPOCTAIP-UHFFFAOYSA-N 0.000 description 1
- UIEKYBOPAVTZKW-UHFFFAOYSA-L naphthalene-2-carboxylate;nickel(2+) Chemical compound [Ni+2].C1=CC=CC2=CC(C(=O)[O-])=CC=C21.C1=CC=CC2=CC(C(=O)[O-])=CC=C21 UIEKYBOPAVTZKW-UHFFFAOYSA-L 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910000159 nickel phosphate Inorganic materials 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- GAIQJSWQJOZOMI-UHFFFAOYSA-L nickel(2+);dibenzoate Chemical compound [Ni+2].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 GAIQJSWQJOZOMI-UHFFFAOYSA-L 0.000 description 1
- NLEUXPOVZGDKJI-UHFFFAOYSA-N nickel(2+);dicyanide Chemical compound [Ni+2].N#[C-].N#[C-] NLEUXPOVZGDKJI-UHFFFAOYSA-N 0.000 description 1
- HZPNKQREYVVATQ-UHFFFAOYSA-L nickel(2+);diformate Chemical compound [Ni+2].[O-]C=O.[O-]C=O HZPNKQREYVVATQ-UHFFFAOYSA-L 0.000 description 1
- JMWUYEFBFUCSAK-UHFFFAOYSA-L nickel(2+);octadecanoate Chemical compound [Ni+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O JMWUYEFBFUCSAK-UHFFFAOYSA-L 0.000 description 1
- DOLZKNFSRCEOFV-UHFFFAOYSA-L nickel(2+);oxalate Chemical compound [Ni+2].[O-]C(=O)C([O-])=O DOLZKNFSRCEOFV-UHFFFAOYSA-L 0.000 description 1
- HKFZDVPCCOOGEV-UHFFFAOYSA-N nickel(3+);borate Chemical compound [Ni+3].[O-]B([O-])[O-] HKFZDVPCCOOGEV-UHFFFAOYSA-N 0.000 description 1
- JOCJYBPHESYFOK-UHFFFAOYSA-K nickel(3+);phosphate Chemical compound [Ni+3].[O-]P([O-])([O-])=O JOCJYBPHESYFOK-UHFFFAOYSA-K 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- BFDHFSHZJLFAMC-UHFFFAOYSA-L nickel(ii) hydroxide Chemical compound [OH-].[OH-].[Ni+2] BFDHFSHZJLFAMC-UHFFFAOYSA-L 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-M octanoate Chemical compound CCCCCCCC([O-])=O WWZKQHOCKIZLMA-UHFFFAOYSA-M 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- DJEHXEMURTVAOE-UHFFFAOYSA-M potassium bisulfite Chemical compound [K+].OS([O-])=O DJEHXEMURTVAOE-UHFFFAOYSA-M 0.000 description 1
- 235000010259 potassium hydrogen sulphite Nutrition 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- BHZRJJOHZFYXTO-UHFFFAOYSA-L potassium sulfite Chemical compound [K+].[K+].[O-]S([O-])=O BHZRJJOHZFYXTO-UHFFFAOYSA-L 0.000 description 1
- 235000019252 potassium sulphite Nutrition 0.000 description 1
- RRDWZGMHSCBIGX-UHFFFAOYSA-J potassium;gold(3+);disulfite Chemical compound [K+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O RRDWZGMHSCBIGX-UHFFFAOYSA-J 0.000 description 1
- ACAYDTMSDROWHW-UHFFFAOYSA-M potassium;iodic acid;iodate Chemical compound [K+].OI(=O)=O.[O-]I(=O)=O ACAYDTMSDROWHW-UHFFFAOYSA-M 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012088 reference solution Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229940045105 silver iodide Drugs 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 229960001516 silver nitrate Drugs 0.000 description 1
- FJOLTQXXWSRAIX-UHFFFAOYSA-K silver phosphate Chemical compound [Ag+].[Ag+].[Ag+].[O-]P([O-])([O-])=O FJOLTQXXWSRAIX-UHFFFAOYSA-K 0.000 description 1
- 229940019931 silver phosphate Drugs 0.000 description 1
- 229910000161 silver phosphate Inorganic materials 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- UKHWJBVVWVYFEY-UHFFFAOYSA-M silver;hydroxide Chemical compound [OH-].[Ag+] UKHWJBVVWVYFEY-UHFFFAOYSA-M 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 229940079827 sodium hydrogen sulfite Drugs 0.000 description 1
- 235000010267 sodium hydrogen sulphite Nutrition 0.000 description 1
- 229940032753 sodium iodate Drugs 0.000 description 1
- 235000015281 sodium iodate Nutrition 0.000 description 1
- 239000011697 sodium iodate Substances 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 229940001482 sodium sulfite Drugs 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- ZWZLRIBPAZENFK-UHFFFAOYSA-J sodium;gold(3+);disulfite Chemical compound [Na+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O ZWZLRIBPAZENFK-UHFFFAOYSA-J 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/62—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of gold
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Abstract
本發明係提供可確實抑制不需要部分之金析出的硬質鍍金溶液。硬質鍍金溶液係為包括金離子供給原料、導電鹽、錯化劑、含有關於金之合金元素的金屬鹽以及金析出控制劑之用於電解的硬質鍍金溶液,以金換算金離子供給原料含有0.5g/L~14g/L,溶液溫度為25℃時,溶液比重為2°Be’~16°Be’,溶液溫度為25℃時,導電度為10mS/cm~70mS/cm。 The present invention provides a hard gold plating solution which can surely suppress unwanted gold precipitation. The hard gold plating solution is a hard gold plating solution for electrolysis including a gold ion supply raw material, a conductive salt, a distorer, a metal salt containing a gold alloying element, and a gold precipitation controlling agent, and the gold ion supply raw material is 0.5 in terms of gold. g/L~14g/L, when the solution temperature is 25 °C, the specific gravity of the solution is 2°Be'~16°Be', and when the solution temperature is 25°C, the conductivity is 10mS/cm~70mS/cm.
Description
本發明係有關於硬質鍍金溶液。 This invention relates to hard gold plating solutions.
鍍金膜具有金的良好導電性、耐腐蝕性等,可作為連接器等各種電子產品接線端子的表面處理,被廣泛利用。此種用途的硬質鍍金為了具有良好耐磨耗性、耐腐蝕性、導電性,必須控制構成鍍金膜的結晶。因此,專利文獻1揭露於鍍金溶液中添加作為鍍金膜結晶調整劑之鈷鹽、鎳鹽等。 The gold-plated film has good electrical conductivity and corrosion resistance of gold, and can be widely used as a surface treatment of various electronic product terminals such as connectors. In order to have good wear resistance, corrosion resistance, and electrical conductivity, hard gold plating for such use must control the crystals constituting the gold plating film. Therefore, Patent Document 1 discloses that a cobalt salt, a nickel salt, or the like as a gold plating film crystal modifier is added to a gold plating solution.
連接器等材料,一般使用黃銅‧磷青銅等銅合金,在進行鍍金時,先形成作為電鍍基板的鎳膜,並在其上方進行鍍金。對這些連接器等電子產品進行電鍍,在為了電性連接進行焊接處理時,為了防止在不需要部分發生焊料上爬,必須進行部份地電鍍處理。換言之,在鍍鎳膜上進行硬質金電鍍時,在需要的地方形成硬質金膜,而不需要的地方不形成硬質金膜,必須為選擇性電鍍。此外,在不需要的地方不進行鍍金,可節省金的消耗及降低成本。 For materials such as connectors, a copper alloy such as brass or phosphor bronze is generally used. When gold plating is performed, a nickel film as a plating substrate is first formed, and gold plating is performed thereon. Electroplating of electronic products such as these connectors is carried out, and when soldering is performed for electrical connection, in order to prevent solder from climbing on unnecessary portions, partial plating treatment is necessary. In other words, when hard gold plating is performed on the nickel plating film, a hard gold film is formed where necessary, and a hard gold film is not formed where it is not necessary, and it is necessary to perform selective plating. In addition, gold plating is not required where it is not needed, which saves gold consumption and reduces costs.
此外,專利文獻2揭露含有金及鈷的金鈷合金電鍍液,維持在弱酸性,藉由添加環六亞甲基四胺,以選擇性地僅對連接器等電子產品的必要部分形成金鈷合金電鍍。若使用專利文獻2的技術,因為一方面可在高電流密度區域形成良好 的電鍍膜,且在低電流密度區域中會電鍍析出困難,所以在不需要的部份不會產生電鍍析出,具有良好的選擇性電鍍析出效果。然而,專利文獻2的技術不僅實際上會在不需要的地方產生金析出,且難以控制有機化合物的消耗量,具有無法迅速管理電鍍浴的問題。 Further, Patent Document 2 discloses that a gold-cobalt alloy plating solution containing gold and cobalt is maintained in a weakly acidic state, and by adding cyclohexamethylenetetramine, selectively forms only gold and cobalt for a necessary portion of an electronic product such as a connector. Alloy plating. If the technique of Patent Document 2 is used, it can be formed well in a high current density region on the one hand. The plating film is difficult to be plated and deposited in a low current density region, so plating deposition does not occur in an unnecessary portion, and a good selective plating deposition effect is obtained. However, the technique of Patent Document 2 not only causes gold deposition in an unnecessary place, but also makes it difficult to control the consumption amount of the organic compound, and has a problem that the plating bath cannot be quickly managed.
因此,本發明人使用專利文獻3所揭露的「包括可溶性金鹽或金複合物、導電鹽、由作為錯化劑的蘋果酸、醋酸、馬來酸、琥珀酸、檸檬酸、甘氨酸、精氨酸及其鹽類所組成之群組中選擇一種或二種以上,由鈷鹽、鎳鹽、銀鹽所組成之群組中選擇至少一種金屬鹽的硬質鍍金溶液、過氧化氫及碘酸鹽的硬質鍍金液」等。 Therefore, the inventors of the present invention disclosed the "including soluble gold salt or gold complex, conductive salt, malic acid, acetic acid, maleic acid, succinic acid, citric acid, glycine, and refined ammonia as a dismuting agent" disclosed in Patent Document 3. One or more selected from the group consisting of an acid and a salt thereof, and a hard gold plating solution, hydrogen peroxide, and iodate selected from at least one metal salt selected from the group consisting of a cobalt salt, a nickel salt, and a silver salt. Hard gold plating solution, etc.
專利文獻1:日本特開2004-76026號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2004-76026
專利文獻2:日本特開2008-45194號公報 Patent Document 2: JP-A-2008-45194
專利文獻3:日本特許5025815號公報 Patent Document 3: Japanese Patent No. 5025815
然而,即使利用專利文獻3所揭露的發明對連接器等電子產品的端子進行電鍍,仍無法完全抑制在不需要部份發生金析出的現象。 However, even if the terminal of an electronic product such as a connector is plated by the invention disclosed in Patent Document 3, the phenomenon of gold deposition in an unnecessary portion cannot be completely suppressed.
有鑑於此,本發明係提供可確實抑制不需要部份之金析出的硬質鍍金溶液。 In view of the above, the present invention provides a hard gold plating solution which can surely suppress unwanted gold precipitation.
經本發明人廣泛研究,發現以下述方去可解決上述問題。 As a result of extensive research by the present inventors, it has been found that the above problems can be solved by the following.
本發明硬質鍍金溶液為包括金離子供給原料、導電鹽、錯化劑、含有關於金之合金元素的金屬鹽以及金析出控制劑之用於電解的硬質鍍金溶液,金離子供給原料以金換算含有0.5g/L~14g/L,溶液溫度為25℃時,溶液比重為2°Be’~16°Be’,溶液溫度為25℃時,導電度為10mS/cm~70mS/cm。 The hard gold plating solution of the present invention is a hard gold plating solution for electrolysis including a gold ion supply material, a conductive salt, a distorer, a metal salt containing a gold alloying element, and a gold precipitation control agent, and the gold ion supply material is contained in gold. 0.5g/L~14g/L, when the solution temperature is 25°C, the specific gravity of the solution is 2°Be'~16°Be', and when the solution temperature is 25°C, the conductivity is 10mS/cm~70mS/cm.
本發明之硬質鍍金溶液中,其中此溶液比重較佳為5°Be’~10°Be’。 In the hard gold plating solution of the present invention, the specific gravity of the solution is preferably 5°Be'~10°Be'.
此外,在本發明之硬質鍍金溶液中,其中此導電度較佳為28mS/cm~50mS/cm。 Further, in the hard gold plating solution of the present invention, the conductivity is preferably from 28 mS/cm to 50 mS/cm.
在本發明之硬質鍍金溶液中,其中此含有關於金之合金元素的金屬鹽較佳由鈷鹽、鎳鹽、銀鹽所組成之群組中選擇至少一種或二種以上。 In the hard gold plating solution of the present invention, the metal salt containing the alloying element of gold is preferably at least one or more selected from the group consisting of a cobalt salt, a nickel salt and a silver salt.
當此金屬鹽為鈷鹽時,較佳以鈷換算含有0.025g/L~5g/L。 When the metal salt is a cobalt salt, it preferably contains 0.025 g/L to 5 g/L in terms of cobalt.
當此金屬鹽為鎳鹽時,較佳以鎳換算含有0.025g/L~5g/L。 When the metal salt is a nickel salt, it preferably contains 0.025 g/L to 5 g/L in terms of nickel.
當此金屬鹽為銀鹽時,較佳以銀換算含有0.025g/L~60g/L。 When the metal salt is a silver salt, it preferably contains 0.025 g/L to 60 g/L in terms of silver.
在本發明之硬質鍍金溶液中,其中此金析出控制劑較佳為濃度0.05g/L~50g/L的過氧化氫。 In the hard gold plating solution of the present invention, the gold precipitation controlling agent is preferably hydrogen peroxide having a concentration of 0.05 g/L to 50 g/L.
本發明係為一種硬質鍍金溶液,包括金離子供給原料、導電鹽、錯化劑、含有關於金之合金元素的金屬鹽以及金析出控制劑,溶液溫度為25℃時,溶液比重及導電度控制在一定的範圍內。使用此硬質鍍金溶液,可僅在需要的地方形成硬質金膜,且可在不需要的地方確實地抑制金析出。因此,使用此硬質鍍金溶液對連接器等電子產品進行電鍍,焊接處理時,在不需要的地方不會產生焊料上爬,可抑制導電特性下降,且減少昂貴金材料的浪費,防止成本增加。 The invention is a hard gold plating solution, comprising a gold ion supply raw material, a conductive salt, a distorting agent, a metal salt containing an alloying element with respect to gold, and a gold precipitation controlling agent. When the solution temperature is 25 ° C, the specific gravity and conductivity of the solution are controlled. Within a certain range. By using this hard gold plating solution, a hard gold film can be formed only where necessary, and gold precipitation can be surely suppressed in an unnecessary place. Therefore, by using this hard gold plating solution, an electronic product such as a connector is plated, and when soldering is performed, solder climbing does not occur in an unnecessary place, deterioration of conductive characteristics can be suppressed, waste of expensive gold material can be reduced, and cost can be prevented from increasing.
第1圖為顯示實施例1硬質鍍金溶液哈氏槽試驗(Hull cell test)結果的圖示。 Fig. 1 is a graph showing the results of the Hull cell test of the hard gold plating solution of Example 1.
第2圖為顯示實施例1硬質鍍金溶液哈氏槽試驗(Hull cell test)結果的圖示。 Fig. 2 is a graph showing the results of the Hull cell test of the hard gold plating solution of Example 1.
第3圖為顯示實施例1硬質鍍金溶液哈氏槽試驗(Hull cell test)結果的圖示。 Fig. 3 is a graph showing the results of the Hull cell test of the hard gold plating solution of Example 1.
第4圖為顯示實施例2硬質電解電鍍試驗結果的圖示。 Fig. 4 is a graph showing the results of the hard electrolytic plating test of Example 2.
本發明硬質鍍金溶液,包括金離子供給原料、導電鹽、錯化劑、含有關於金之合金元素的金屬鹽以及金析出控制劑。以下,藉由分別對本發明硬質鍍金溶液的組成成分進行說明,以詳述本發明說明。 The hard gold plating solution of the present invention includes a gold ion supply material, a conductive salt, a distorer, a metal salt containing an alloying element with respect to gold, and a gold precipitation controlling agent. Hereinafter, the composition of the hard gold plating solution of the present invention will be described separately to explain the present invention in detail.
含金量及金離子供給原料:本發明硬質鍍金溶液含有金離子供給原料,以金換算含有0.5g/L~14g/L。藉由將 含金量控制於上述範圍內,可滿足工業生產的金析出速度,獲得良好品質的硬質鍍金膜,且防止昂貴金材料的浪費。 Gold content and gold ion supply material: The hard gold plating solution of the present invention contains a gold ion supply material and contains 0.5 g/L to 14 g/L in terms of gold. By The gold content is controlled within the above range, which satisfies the gold deposition rate of industrial production, obtains a good quality hard gold plating film, and prevents waste of expensive gold materials.
含金量不滿0.5g/L時,金析出速度下降,無法滿足工業生產性。此外,為了確保電解時所設定的電流密度,必須給予高壓電,若給予高壓電,則會使所獲得的硬質鍍金膜變色或產生紅色等外觀惡化,導致硬質鍍金膜的表面失去光澤。此外,含金量超過14g/L時,因為會增加殘留在硬質鍍金溶液中不被使用之析出金的金量,不具經濟效應。 When the gold content is less than 0.5 g/L, the gold deposition rate is lowered, and the industrial productivity cannot be satisfied. Further, in order to secure the current density set at the time of electrolysis, it is necessary to apply high-voltage electricity, and if high-voltage electric power is applied, the obtained hard gold plating film is discolored or the appearance of red is deteriorated, and the surface of the hard gold plating film is tarnished. Further, when the gold content exceeds 14 g/L, since the amount of gold which is not used in the hard gold plating solution is increased, there is no economic effect.
此外,在本發明硬質鍍金溶液中,較佳以金換算含有5g/L~12g/L。如此,可完全滿足工業生產性,確保金的析出速度,且硬質鍍金溶液具有充分地安定性,可確實獲得品質優良的硬質鍍金膜。 Further, in the hard gold plating solution of the present invention, it is preferably contained in an amount of 5 g/L to 12 g/L in terms of gold. In this way, the industrial productivity can be fully satisfied, the precipitation rate of gold can be ensured, and the hard gold plating solution has sufficient stability, and a hard gold plating film of excellent quality can be surely obtained.
本發明硬質鍍金溶液中,金離子供給原料可使用可溶於水的金鹽(水溶性金鹽)或金複合物。例如,可使用氰化亞金(I)鉀、氰化亞金(II)鉀、亞硫酸金鉀、亞硫酸金鈉、金(III)乙二胺複合物、作為配體之乙內醯脲衍生物的金複合物等。其中,較佳為氰化亞金(I)鉀。容易於市面上購得,且可增加溶液安定性。 In the hard gold plating solution of the present invention, a gold ion-soluble raw material may use a water-soluble gold salt (water-soluble gold salt) or a gold complex. For example, potassium cyanide (I) potassium, potassium cyanide (II) potassium, gold potassium sulfite, gold sodium sulfite, gold (III) ethylene diamine complex, and beta carbamide as a ligand can be used. Gold complexes of derivatives, etc. Among them, potassium cyanide (I) is preferred. It is easily available on the market and can increase the stability of the solution.
溶液比重及導電度:本發明硬質鍍金溶液在溶液溫度25℃時的溶液比重為2°Be’~16°Be’,溶液溫度25℃時的導電度為10mS/cm~70mS/cm。本發明的溶液比重,並非使用絕對單位,而是使用實用單位Baumé度。本發明硬質鍍金溶液的溶液比重比水大,純水為0°Be’,15%濃度的食鹽水為15°Be’,將兩者之間分成15等分的數值表示。 Solution Specific Gravity and Conductivity: The hard gold plating solution of the present invention has a specific gravity of 2°Be'~16°Be' at a solution temperature of 25 ° C and a conductivity of 10 mS/cm to 70 mS/cm at a solution temperature of 25 ° C. The specific gravity of the solution of the present invention is not an absolute unit but a practical unit Baumé degree. The solution of the hard gold plating solution of the present invention has a specific gravity larger than that of water, and the pure water is 0°Be', and the 15% concentration of the brine is 15°Be', and the numerical value is divided into 15 equal parts.
本發明中,為了容易說明溶液比重及導電度,對最初的溶液比重及導電度之間相關的關係進行描述。本發明之「溶液比重」及「導電度」依照本發明硬質鍍金溶液所含有的「金離子供給原料」、「導電鹽」、「錯化劑」、「含有關於金之合金元素的金屬鹽」及「金析出控制劑」各成份含量而定。本發明硬質鍍金溶液中,對上述各成份的含量進行調整,若「溶液比重」及「導電度」在上述範圍內則沒有問題。然而,為了確保電鍍時電流的安定性及在不需要的部位抑制金析出,較佳藉由改變「導電鹽」含量使「溶液比重」及「導電度」位於上述範圍。硬質鍍金溶液中導電鹽的含量增加,會使得溶液比重增加且離子量增加,造成導電度增加。 In the present invention, in order to easily explain the specific gravity and conductivity of the solution, the relationship between the specific gravity of the solution and the conductivity is described. The "solution specific gravity" and the "conductivity" according to the present invention are "gold ion supply raw material", "conductive salt", "distorting agent", and "metal salt containing an alloying element with respect to gold" contained in the hard gold plating solution of the present invention. And the content of each component of the "gold precipitation control agent". In the hard gold plating solution of the present invention, the content of each of the above components is adjusted, and if the "solution specific gravity" and the "electrical conductivity" are within the above range, there is no problem. However, in order to ensure the stability of the current during plating and to suppress the precipitation of gold at an unnecessary portion, it is preferable to change the "conductive salt" content so that the "solution specific gravity" and the "conductivity" are within the above range. The increase in the content of the conductive salt in the hard gold plating solution causes the specific gravity of the solution to increase and the amount of ions to increase, resulting in an increase in conductivity.
本發明硬質鍍金溶液,利用溶液比重為2°Be’~16°Be’,且導電度為10mS/cm~70mS/cm,以確保高電流密度區域的析出速度,且降低低電流密度區域的析出速度。由此結果,可將高電流密度區域設定為需要電鍍的部份,確實進行金析出,且將低電流密度區域設定為不需要電鍍的部份,抑制金析出。因此,連接器等電子產品的端子在進行電鍍時,不會發生外觀不良,可僅在需要的部分進行金析出,而在不需要的部分確實地抑制金析出。 The hard gold plating solution of the present invention utilizes a solution specific gravity of 2°Be'~16°Be' and a conductivity of 10 mS/cm to 70 mS/cm to ensure a deposition rate in a high current density region and reduce precipitation in a low current density region. speed. As a result, the high current density region can be set to the portion to be plated, gold deposition is surely performed, and the low current density region is set to a portion where plating is not required, and gold deposition is suppressed. Therefore, when the terminal of an electronic product such as a connector is subjected to electroplating, appearance defects do not occur, and gold deposition can be performed only in a required portion, and gold deposition can be surely suppressed in an unnecessary portion.
若溶液比重未滿2°Be’或導電度未滿10mS/cm,電鍍時難以確保在高電流密度區域所設定的電流密度。此外,為了確保高電流密度區域中所設定的電流密度,必須使用高壓電,給予高壓電,會使所獲得的硬質鍍金膜變色或產生紅色等外觀惡化,導致硬質鍍金膜的表面失去光澤。另一方面,若溶 液比重超過16°Be’或導電度超過70mS/cm時,與溶液比重為2°Be’~16°Be’且導電度為10mS/cm~70mS/cm相比,高電流密度區域的析出速度下降,且低電流密度區域的析出速度上升。因此,必須增加處理時間以獲得對高電流密度區域所設定的膜厚度,電鍍時間增加,則低電流密度區域持續進行金析出。因此,溶液比重超過16°Be’或導電度超過70mS/cm時,不僅在需要部份,在不需要部份也會產生金析出。 If the specific gravity of the solution is less than 2°Be' or the conductivity is less than 10 mS/cm, it is difficult to ensure the current density set in the high current density region during plating. In addition, in order to ensure the current density set in the high current density region, high-voltage electricity must be used, and high-voltage power is applied, which causes the obtained hard gold-plated film to be discolored or produces a red appearance, which causes the surface of the hard gold-plated film to lose its luster. . On the other hand, if dissolved When the specific gravity of the liquid exceeds 16°Be' or the conductivity exceeds 70mS/cm, the precipitation rate of the high current density region is higher than the solution specific gravity of 2°Be'~16°Be' and the conductivity is 10mS/cm~70mS/cm. The drop rate and the precipitation rate in the low current density region increase. Therefore, it is necessary to increase the processing time to obtain the film thickness set for the high current density region, and the plating time is increased, and the gold deposition is continued in the low current density region. Therefore, when the specific gravity of the solution exceeds 16°Be' or the conductivity exceeds 70 mS/cm, gold precipitation occurs not only in the required portion but also in the unnecessary portion.
在本發明硬質鍍金溶液中,從不會產生外觀不良且在不需要部份確實防止金析出的觀點來看,溶液比重較佳為5°Be’~10°Be’,且導電度較佳為28mS/cm~50mS/cm相比。 In the hard gold plating solution of the present invention, the specific gravity of the solution is preferably 5°Be'~10°Be', and the conductivity is preferably from the viewpoint that the appearance is not bad and the unnecessary portion does prevent the precipitation of gold. 28mS/cm~50mS/cm compared.
導電鹽:本發明硬質鍍金溶液中所使用的導電鹽,可使用一種或二種以上的有機氧化物或無機化合物。有機氧化物可擇自一個分子內含有一個以上羧基的化合物,具體來說,可擇自於蘋果酸、酒石酸、草酸、乳酸及其鹽類。無機化合物可擇自磷酸、硫酸、硼酸及其鹽類。藉由使用這些導電鹽,可安定硬質鍍金溶液的導電率,且容易調整溶液比重及導電度。 Conductive salt: As the conductive salt used in the hard gold plating solution of the present invention, one or two or more organic oxides or inorganic compounds may be used. The organic oxide may be selected from a compound having one or more carboxyl groups in one molecule, and specifically, malic acid, tartaric acid, oxalic acid, lactic acid, and salts thereof. The inorganic compound may be selected from phosphoric acid, sulfuric acid, boric acid, and salts thereof. By using these conductive salts, the conductivity of the hard gold plating solution can be stabilized, and the specific gravity and conductivity of the solution can be easily adjusted.
導電鹽在硬質鍍金溶液中較佳含有10g/L~200g/L的濃度。導電鹽的濃度未滿10g/L時,會使導電度低於10mS/cm。此外,鍍金溶液的溶液安定性降低會使得長期保存變得困難。另一方面,導電鹽的濃度超過200g/L時,導電度會超過70mS/cm。 The conductive salt preferably contains a concentration of 10 g/L to 200 g/L in the hard gold plating solution. When the concentration of the conductive salt is less than 10 g/L, the conductivity is less than 10 mS/cm. In addition, a decrease in the stability of the solution of the gold plating solution makes long-term storage difficult. On the other hand, when the concentration of the conductive salt exceeds 200 g/L, the conductivity exceeds 70 mS/cm.
此外,在本發明硬質鍍金溶液中,較佳導電鹽濃度為20g/L~100g/L。藉此,期望金析出的區域(高電流密度區 域)與不要析出的區域(低電流密度區域)的金析出效率有明顯地差異,且可穩定地獲得實際操作上必要的金析出速率。 Further, in the hard gold plating solution of the present invention, the conductive salt concentration is preferably from 20 g/L to 100 g/L. Thereby, the region where gold is precipitated (high current density region) The gold precipitation efficiency of the region (the low current density region) is not significantly different from that of the region to be precipitated, and the gold deposition rate necessary for practical operation can be stably obtained.
錯化劑:本發明硬質鍍金溶液中,錯化劑在此硬質鍍金溶液中,與金或後述合金元素形成金屬複合物,此金屬複合物在溶液中被安定化,以增加溶液的安定性。此外,由上述可知,本發明硬質鍍金溶液的金離子供給原料,在一開始就使用錯化劑時,此錯化劑主要被用來形成合金元素的複合物。錯化劑較佳擇自於甲酸、蘋果酸、醋酸、馬來酸、琥珀酸、檸檬酸、甘氨酸、精氨酸及其鹽類中一種或二種以上。這些錯化劑容易使金及後述合金元素形成複合物。此外,這些錯化劑因為可作為硬質鍍金溶液的緩衝物,穩定pH值。錯化劑的添加量可考慮在硬質鍍金溶液中形成金屬複合物之金及合金元素的量來決定。 Staggering agent: In the hard gold plating solution of the present invention, the staggering agent forms a metal complex with gold or an alloying element described later in the hard gold plating solution, and the metal complex is stabilized in the solution to increase the stability of the solution. Further, as apparent from the above, when the gold ion supply raw material of the hard gold plating solution of the present invention is used as a distorting agent at the beginning, the distorting agent is mainly used to form a composite of alloying elements. The error-promoting agent is preferably selected from one or more of formic acid, malic acid, acetic acid, maleic acid, succinic acid, citric acid, glycine, arginine and salts thereof. These distorting agents tend to form a composite of gold and an alloying element described later. In addition, these distorants stabilize the pH because they act as a buffer for hard gold plating solutions. The amount of the distoring agent added can be determined in consideration of the amount of gold and alloying elements forming the metal composite in the hard gold plating solution.
此外,本發明硬質鍍金溶液中,錯化劑的濃度較佳為1.0g/L~250g/L。錯化劑的濃度未滿1.0g/L時,硬質鍍金溶液中會變得難以含有金及合金元素複合物,破壞硬質鍍金溶液的溶液安定性,溶液壽命縮短。一方面,錯化劑濃度超過250g/L時,超過錯合使用量,因為作為緩衝劑的效果也已飽和,僅是浪費資源。 Further, in the hard gold plating solution of the present invention, the concentration of the distoring agent is preferably from 1.0 g/L to 250 g/L. When the concentration of the distoring agent is less than 1.0 g/L, it is difficult to contain gold and an alloying element complex in the hard gold plating solution, and the solution stability of the hard gold plating solution is deteriorated, and the solution life is shortened. On the one hand, when the concentration of the distoring agent exceeds 250 g/L, the amount of misuse is exceeded, because the effect as a buffer is also saturated, and only resources are wasted.
含關於金之合金元素的金屬鹽:本發明硬質鍍金溶液中,「含有關於金之合金元素的金屬鹽」為含有與金在電鍍膜中析出(共同析出)的金屬鹽,較佳由水溶性鈷鹽、鎳鹽及銀鹽中選擇一種或二種以上。藉此,確實含有合金元素、因具高硬度而具有良好耐摩性,可容易形成作為連接器等接點材料 使用之硬質鍍金膜。以下,列舉具體的金屬鹽。本發明所列舉的金屬鹽,具有優良的水溶性,不影響金的析出效率,且具有良好地與金共同析出的特性。 Metal salt containing an alloying element of gold: In the hard gold plating solution of the present invention, the "metal salt containing an alloying element with respect to gold" is a metal salt containing a precipitated (co-precipitated) with gold in a plating film, preferably water-soluble. One or more of the cobalt salt, the nickel salt and the silver salt are selected. Therefore, it does contain alloying elements, has good abrasion resistance due to high hardness, and can be easily formed as a contact material such as a connector. Hard gold plated film used. Hereinafter, specific metal salts are listed. The metal salt exemplified in the present invention has excellent water solubility, does not affect the precipitation efficiency of gold, and has a property of being favorably precipitated together with gold.
鈷鹽可使用硫酸鈷、氯化鈷、硝酸鈷、碳酸鈷、酞菁鈷、硬脂酸鈷、乙二胺4醋酸鈷鈉、環烷酸鈷、硼酸鈷、硫氰酸鈷、氨基磺酸鈷、醋酸鈷、檸檬酸鈷、氫氧化鈷、草酸鈷、磷酸鈷等。 As the cobalt salt, cobalt sulfate, cobalt chloride, cobalt nitrate, cobalt carbonate, cobalt phthalocyanine, cobalt stearate, ethylenediamine cobalt tetraacetate, cobalt naphthenate, cobalt borate, cobalt thiocyanate, sulfamic acid can be used. Cobalt, cobalt acetate, cobalt citrate, cobalt hydroxide, cobalt oxalate, cobalt phosphate, and the like.
鎳鹽可使用硫酸鎳、醋酸鎳、氯化鎳、硼酸鎳、安息香酸鎳、草酸鎳、環烷酸鎳、氧化鎳、磷酸鎳、硬脂酸鎳、酒石酸鎳、硫氰酸鈷、氨基磺酸鎳、碳酸鎳、檸檬酸鎳、甲酸鎳、氰化鎳、氫氧化鎳、碳酸鎳、辛酸鎳等。 As the nickel salt, nickel sulfate, nickel acetate, nickel chloride, nickel borate, nickel benzoate, nickel oxalate, nickel naphthenate, nickel oxide, nickel phosphate, nickel stearate, nickel tartrate, cobalt thiocyanate, aminosulfonate can be used. Nickel acid, nickel carbonate, nickel citrate, nickel formate, nickel cyanide, nickel hydroxide, nickel carbonate, nickel octylate, and the like.
銀鹽可使用氯化銀、氫氧化銀、碘化銀、硫化銀、磷酸銀、硝酸銀等。 As the silver salt, silver chloride, silver hydroxide, silver iodide, silver sulfide, silver phosphate, silver nitrate or the like can be used.
本發明硬質鍍金溶液中,在單獨使用鈷鹽、鎳鹽及銀鹽,或組合複數個金屬鹽任一種時,金屬鹽整體含量較佳為0.025g/L~5g/L。金屬鹽整體的含量未滿0.025g/L時,鍍金膜的共同析出量下降,而無法獲得具有充分的硬度及耐摩性鍍金膜。此外,金屬鹽整體含量超過5g/L時,鍍金膜的共同析出量過剩,造成硬質鍍金膜的電阻上升,導致顏色顯著地改變。 In the hard gold plating solution of the present invention, when the cobalt salt, the nickel salt and the silver salt are used alone, or when a plurality of metal salts are combined, the total content of the metal salt is preferably from 0.025 g/L to 5 g/L. When the content of the entire metal salt is less than 0.025 g/L, the amount of precipitation of the gold plating film is lowered, and a gold plating film having sufficient hardness and abrasion resistance cannot be obtained. Further, when the total content of the metal salt exceeds 5 g/L, the amount of precipitation of the gold plating film is excessive, and the electric resistance of the hard gold plating film rises, resulting in a remarkable change in color.
金析出抑制劑:金析出抑制劑具有抑制金析出的效果,降低低電流密度區域的金析出效率。亦言之,在需要金析出的部份(高電流密度區域)維持金析出效率,且在不需要金析出的部份(低電流密度區域)抑制金析出。具體的金析出抑制劑,可使用過氧化氫、過硫酸鉀、過硫酸鈉、過硫酸氨、碘酸 鉀、碘酸氫鉀、碘酸鈉、亞硫酸鉀、亞硫酸氫鉀、亞硫酸鈉、亞硫酸氫鈉、亞硫酸氨及亞硫酸銨過氧化氫、過硫酸鹽、碘酸鹽、亞硫酸鹽等。以電鍍液安定性的觀點來看,較佳為過氧化氫。 Gold precipitation inhibitor: The gold precipitation inhibitor has an effect of suppressing gold precipitation and lowers the gold deposition efficiency in a low current density region. In other words, the gold deposition efficiency is maintained in the portion where the gold is precipitated (high current density region), and the gold deposition is suppressed in the portion where the gold deposition is not required (low current density region). Specific gold precipitation inhibitors, hydrogen peroxide, potassium persulfate, sodium persulfate, ammonium persulfate, iodic acid can be used. Potassium, potassium hydrogen iodate, sodium iodate, potassium sulfite, potassium hydrogen sulfite, sodium sulfite, sodium hydrogen sulfite, ammonium sulfite and ammonium sulfite hydrogen peroxide, persulfate, iodate, sulfite, etc. . From the viewpoint of the stability of the plating solution, hydrogen peroxide is preferred.
本發明硬質鍍金溶液中金析出抑制劑的含量較佳為0.05g/L~50g/L。若金析出抑制劑的含量未滿0.05g/L,會使得低電流密度區域中的金析出效率變低。另一方面,若金析出抑制劑的含量超過50g/L,同樣地高電流密度區域中的金析出效率也會降低。 The content of the gold precipitation inhibitor in the hard gold plating solution of the present invention is preferably from 0.05 g/L to 50 g/L. If the content of the gold precipitation inhibitor is less than 0.05 g/L, the gold deposition efficiency in the low current density region is lowered. On the other hand, when the content of the gold precipitation inhibitor exceeds 50 g/L, the gold deposition efficiency in the high current density region is also lowered.
以下,以實施例對本發明進行說明,但不可用於限定本發明。 Hereinafter, the present invention will be described by way of examples, but it should not be construed as limiting the invention.
1.溶液比重及導電度的評估 1. Evaluation of solution specific gravity and conductivity
首先,配製以下硬質鍍金溶液1~8(pH4.2)。檸檬酸作為錯化劑、導電鹽及緩衝劑,甲酸作為導電鹽及緩衝劑,檸檬酸鉀作為導電鹽,過氧化劑作為金析出抑制劑。藉由將檸檬酸的濃度在0g/L~90g/L的範圍內變化,檸檬酸鉀的濃度在0g/L~180g/L的範圍內變化,以調整溶液比重。 First, prepare the following hard gold plating solutions 1 to 8 (pH 4.2). Citric acid is used as a distoring agent, a conductive salt and a buffering agent, formic acid is used as a conductive salt and a buffering agent, potassium citrate is used as a conductive salt, and a peroxidizing agent is used as a gold precipitation inhibitor. By changing the concentration of citric acid in the range of 0 g/L to 90 g/L, the concentration of potassium citrate is varied from 0 g/L to 180 g/L to adjust the specific gravity of the solution.
具體來說,硬質鍍金溶液1~8,首先將檸檬酸、檸檬酸鉀及甲酸溶於水中,接著加入並溶解硫酸鈷。接著,使用檸檬酸及作為pH調整劑的氫氧化鉀,將pH值調整至pH4.2,加入並溶解氰化亞金(I)鉀。最後,加入並溶解過氧化氫,以獲得硬質鍍金溶液。所獲得的硬質鍍金溶液在浸浴時的溶液比重(溶液溫度25℃)如表1所示。此外,硬質鍍金溶液8 為比較用溶液,其溶液比重在2°Be’~16°Be’的範圍以外。 Specifically, the hard gold plating solution 1-8 first dissolves citric acid, potassium citrate and formic acid in water, and then adds and dissolves cobalt sulfate. Next, using citric acid and potassium hydroxide as a pH adjuster, the pH was adjusted to pH 4.2, and potassium (I) cyanide was added and dissolved. Finally, hydrogen peroxide is added and dissolved to obtain a hard gold plating solution. The specific gravity of the obtained hard gold plating solution at the time of bathing (solution temperature 25 ° C) is shown in Table 1. In addition, hard gold plating solution 8 For the comparative solution, the specific gravity of the solution is outside the range of 2°Be'~16°Be'.
此外,配製作為參考用溶液的硬質鍍金溶液9,同樣地,測定其溶液比重。硬質鍍金溶液9僅將14.5g/L氰化亞金(I)鉀及2.5g/L硫酸鈷(鈷0.5g/L)溶於純水中,不含有檸檬酸、甲酸、檸檬酸鉀及氫氧化鉀。 Further, a hard gold plating solution 9 as a reference solution was prepared, and the specific gravity of the solution was measured in the same manner. The hard gold plating solution 9 only dissolves 14.5 g/L potassium cyanide (I) potassium and 2.5 g/L cobalt sulfate (cobalt 0.5 g/L) in pure water, and does not contain citric acid, formic acid, potassium citrate and hydrogen. Potassium oxide.
接著,將所獲得的硬質鍍金溶液1~9於浸浴溫度25℃下,測量導電度及動力黏度。結果如表1所示。 Next, the obtained hard gold plating solution 1 to 9 was measured for conductivity and dynamic viscosity at a bath temperature of 25 ° C. The results are shown in Table 1.
接著,對上述硬質鍍金溶液3、4、6、8進行哈氏 槽試驗。在哈氏槽試驗中,使用哈氏槽(Hull cell)試驗儀器(山本鍍金股份有限公司的試驗儀器),將具有5μm鎳膜的乾淨銅板(縱向67mm x横向100mm x厚0.3mm)作為試驗片,以電流2A,電鍍時間1分鐘,攪拌速度1000rpm,浸浴溫度50℃的條件下進行試驗。結果如第1~3圖所示。 Next, the above hard gold plating solution 3, 4, 6, 8 is subjected to Hastelloy Groove test. In the Hastelloy test, a clean copper plate (longitudinal 67 mm x lateral 100 mm x thickness 0.3 mm) having a nickel film of 5 μm was used as a test piece using a Hull cell tester (a test instrument of Yamamoto Gold Co., Ltd.). The test was carried out under the conditions of a current of 2 A, a plating time of 1 minute, a stirring speed of 1000 rpm, and a bath temperature of 50 °C. The results are shown in Figures 1 to 3.
第1圖為電極間的距離及伴隨哈氏槽試驗所形成之鍍金膜厚度間的關係示意圖。第1圖顯示由陽極至陰極(乾淨銅板)的距離,距離小的區域為高電流密度區域,相當於需要電鍍部份,距離大的區域為低電流密度區域,相當於不需要電鍍部份。此外,雖然縱軸表示所獲得金膜的厚度,實質上代表析出速度。再者,第1(b)圖為第1(a)圖的部分放大圖。 Fig. 1 is a schematic diagram showing the relationship between the distance between the electrodes and the thickness of the gold plating film formed by the Hastelloy test. Figure 1 shows the distance from the anode to the cathode (clean copper plate). The small distance is the high current density region, which is equivalent to the need for plating. The large distance is the low current density region, which is equivalent to the need for plating. Further, although the vertical axis indicates the thickness of the obtained gold film, it substantially represents the deposition rate. Further, Fig. 1(b) is a partially enlarged view of Fig. 1(a).
第2圖為電流密度與鍍金膜厚度之間的關係示意圖。電流密度與陽極至陰極(乾淨銅板)間的距離存在依賴性。再者,第2(b)圖為第2(a)圖的部分放大圖。 Figure 2 is a graphical representation of the relationship between current density and thickness of a gold plated film. The current density is dependent on the distance from the anode to the cathode (clean copper plate). Further, the second (b) is a partial enlarged view of the second (a) figure.
第3圖為電極間與最大膜厚之間的關係示意圖。在此,最大膜厚係為陽極至陰極間距離為1cm部份的膜厚。再者,第3(b)圖為第3(a)圖的部分放大圖。 Figure 3 is a schematic diagram showing the relationship between the electrodes and the maximum film thickness. Here, the maximum film thickness is a film thickness of a portion from the anode to the cathode of 1 cm. Furthermore, Fig. 3(b) is a partially enlarged view of Fig. 3(a).
由表1可知,硬質鍍金溶液1~9中,若檸檬酸、檸檬酸鈉及甲酸的含量高,則明顯具有高的溶液比重。此外,硬質鍍金溶液1~9中,若溶液比重高,則明顯導電度增加,且動力黏度增加。再者,由第1圖及第2圖可知,若溶液比重低,則明顯高電流密度區域的析出速度增加,且低~中電流密度區域的析出速度降低,另一方面,若溶液比重高,則明顯高電流密度區域的析出速度降低,且低~中電流密度區域的析出 速度增加。 As can be seen from Table 1, in the hard gold plating solutions 1 to 9, when the content of citric acid, sodium citrate, and formic acid is high, the solution has a high specific gravity. Further, in the hard gold plating solution 1 to 9, if the specific gravity of the solution is high, the apparent electrical conductivity is increased and the dynamic viscosity is increased. Further, as is apparent from FIGS. 1 and 2, when the specific gravity of the solution is low, the deposition rate in the high current density region is increased, and the deposition rate in the low to medium current density region is lowered. On the other hand, if the solution has a high specific gravity, The precipitation rate of the high current density region is reduced, and the precipitation of the low to medium current density region is observed. The speed increases.
此外,參照第1圖及第2圖,當使用溶液比重為2~16°Be’範圍的硬質鍍金液液3、4、6時,距離陽極1cm的電流密度為10A/dm2部份(高電流密度區域)的膜厚為1.8μm以上。另一方面,當使用溶液比重為18.4°Be’(超過16°Be’)的硬質鍍金溶液8(比較用溶液)時,上述部份的膜厚為1.5μm。由此結果可知,硬質鍍金溶液3、4、6在高電流密度區域,即在需要電鍍的部分,金析出速度快速,明顯可對此部份以良好地效率進行金析出。此外,硬質鍍金溶液8(比較用溶液),因為在高電流密度區域的金析出速度慢,所以為了使距離陽極1cm位置的膜厚為1.8μm以上,電鍍時間必須為1分鐘以上。電鍍時間增加時,可以預期在設定為低電流密度不需要電鍍的部份會進一步進行金析出。 In addition, referring to Fig. 1 and Fig. 2, when a hard gold plating liquid solution 3, 4, and 6 having a solution specific gravity of 2 to 16 ° Be' is used, a current density of 1 cm from the anode is 10 A/dm 2 (high) The film thickness of the current density region is 1.8 μm or more. On the other hand, when a hard gold plating solution 8 (comparative solution) having a solution specific gravity of 18.4 ° Be' (more than 16 ° Be') was used, the film thickness of the above portion was 1.5 μm. From this result, it is understood that the hard gold plating solutions 3, 4, and 6 have a high rate of gold deposition in a high current density region, that is, a portion where plating is required, and it is apparent that gold is precipitated with good efficiency in this portion. Further, in the hard gold plating solution 8 (comparative solution), since the gold deposition rate in the high current density region is slow, the plating time must be 1 minute or longer in order to make the film thickness at a position of 1 cm from the anode 1.8 μm or more. When the plating time is increased, it is expected that gold deposition will be further performed in a portion which is set to a low current density and which does not require plating.
另外,在使用硬質鍍金溶液3、4、6時,距離陽極9.5cm的地方,電流密度為0.1A/dm2的部份(低電流密度區域)的膜厚為0.15μm以下,當使用硬質鍍金溶液8(比較用溶液)時,上述部份的膜厚為0.2μm。由此結果可知,與硬質鍍金液液8(比較用溶液)相比,硬質鍍金液液3、4、6可明顯抑制設定為低電流密度之不需要電鍍部份的金析出。 Further, when the hard gold plating solutions 3, 4, and 6 were used, the film thickness of the portion (low current density region) having a current density of 0.1 A/dm 2 was 0.15 μm or less at a distance of 9.5 cm from the anode, when hard gold plating was used. In the case of the solution 8 (comparative solution), the film thickness of the above portion was 0.2 μm. From this result, it is understood that the hard gold plating liquid liquids 3, 4, and 6 can significantly suppress the gold deposition which is not required to be plated, which is set to a low current density, as compared with the hard gold plating liquid liquid 8 (comparative solution).
再者,由第3圖可知,與硬質鍍金溶液8(比較用溶液)相比,在使用硬質鍍金溶液3、4、6時,特別在低電流密度區域中,相對於最大膜厚(高電流密度區域)的相對膜厚較小。例如,相較於在使用硬質鍍金溶液3、4、6時,距離陽極7cm的電流密度為約1.3A/dm2的地方(低電流密度區域),其 相對膜厚為7%以下,在使用硬質鍍金溶液8(比較用溶液)時,上述部份的相對膜厚為12%以上。另外,相較於在使用硬質鍍金液液3、4、6時,距離陽極9.5cm的電流密度為約0.1A/dm2的地方(低電流密度區域),其相對膜厚為0.8%以下,在使用硬質鍍金液液8(比較用溶液)時,上述部份的相對膜厚為1.3%。由此結果可知,與硬質鍍金溶液8(比較用溶液)相比,硬質鍍金溶液3、4、6明顯可確保需要電鍍部份的膜厚,且抑制在不需要電鍍部份的金析出。 Furthermore, as can be seen from Fig. 3, compared with the hard gold plating solution 8 (comparative solution), when the hard gold plating solutions 3, 4, and 6 are used, particularly in the low current density region, the maximum film thickness (high current) The relative film thickness of the density region is small. For example, when the current density of 7 cm from the anode is about 1.3 A/dm 2 (low current density region) when using the hard gold plating solution 3, 4, 6, the relative film thickness is 7% or less, and is used. In the case of the hard gold plating solution 8 (comparative solution), the relative film thickness of the above portion is 12% or more. In addition, when the current density of 9.5 cm from the anode is about 0.1 A/dm 2 (low current density region) when the hard gold plating liquid liquids 3, 4, and 6 are used, the relative film thickness is 0.8% or less. When the hard gold plating liquid 8 (comparative solution) was used, the relative film thickness of the above portion was 1.3%. From this result, it is understood that the hard gold plating solutions 3, 4, and 6 significantly ensure the film thickness of the plated portion as compared with the hard gold plating solution 8 (comparative solution), and suppress the precipitation of gold which does not require plating.
2.析出選擇性的評估 2. Evaluation of precipitation selectivity
首先,配製以下硬質鍍金溶液10、11(pH4.2)。藉由將檸檬酸的濃度在40g/L~90g/L範圍內進行變化,檸檬酸鉀的濃度在80g/L~180g/L範圍內進行變化,以調整溶液比重。各硬質鍍金溶液的溶液比重如表2所示。 First, the following hard gold plating solutions 10, 11 (pH 4.2) were prepared. By changing the concentration of citric acid in the range of 40 g/L to 90 g/L, the concentration of potassium citrate is varied in the range of 80 g/L to 180 g/L to adjust the specific gravity of the solution. The specific gravity of the solution of each hard gold plating solution is shown in Table 2.
接著,使用具有5μm鎳膜的乾淨銅板作為試驗片,在使用上述硬質鍍金溶液進行部份電鍍時,調查在不需要部份發生的金析出程度。 Next, a clean copper plate having a nickel film of 5 μm was used as a test piece, and when partial plating was performed using the above hard gold plating solution, the degree of gold deposition occurring in an unnecessary portion was investigated.
首先,準備由厚度3mm矽橡膠所構成的評估用遮罩,以及由厚度1mm矽橡膠所構成的電鍍用遮罩。在評估用 遮罩上形成直徑10mm的第1圓孔部及與此圓孔部連通的方孔部。方孔部為長20mm x寬5mm,此長度方向與第1圓孔部的徑向相同,且長度方向的一端與第1圓孔部連通。此外,在電鍍用遮罩上僅形成直徑10mm的第2圓孔部。接著,在試驗片的鎳膜上依序緊密貼合評估用遮罩及電鍍用遮罩。此時,將第1圖孔及第2圓孔連通。 First, an evaluation mask made of a rubber having a thickness of 3 mm and a mask for plating made of a rubber having a thickness of 1 mm were prepared. For evaluation A first circular hole portion having a diameter of 10 mm and a square hole portion communicating with the circular hole portion are formed on the mask. The square hole portion has a length of 20 mm and a width of 5 mm. The longitudinal direction is the same as the radial direction of the first circular hole portion, and one end in the longitudinal direction communicates with the first circular hole portion. Further, only the second circular hole portion having a diameter of 10 mm was formed on the plating mask. Next, the mask for evaluation and the mask for plating were closely attached to the nickel film of the test piece. At this time, the first hole and the second hole are connected to each other.
接著,在緊密貼合評估用遮罩及電鍍用遮罩的試驗片上,使用硬質鍍金溶液,利用噴射進行電鍍處理,在鍍鎳膜上形成硬質鍍金。所獲得的硬質鍍金膜,利用評估用遮罩的形狀,與第1圓形部及與圓形部連通的矩形部形成鎖孔形狀。電鍍處理時,浸浴溫度為50℃,電流密度為50A/dm2。預先測定第1圓形區域鍍金膜厚達0.2μm所需時間,並以與此相同的時間作為電鍍處理時間。電鍍處理時,面對試驗片第1圓孔部的區域,鍍鎳膜上沒有電鍍用遮罩,會被硬質鍍金溶液直接噴射,變為高電流密度區域,此外,面對試驗片方孔部的區域,因鍍鎳膜上存在有電鍍用遮罩,不會被硬質鍍金溶液直接噴射,形成相較於面對第1圓孔部區域低的低電流密度區域。因此,在進行電鍍時,面對試驗片第1圓孔部的區域為需要電鍍的部份,面對試驗片方孔的區域為不需要電鍍的部份,在面對方孔的區域上形成硬質鍍金膜為理想狀態。 Next, on the test piece in which the evaluation mask and the plating mask were closely adhered, a hard gold plating solution was used, and plating treatment was performed by spraying to form hard gold plating on the nickel plating film. The obtained hard gold plating film is formed into a keyhole shape by the shape of the evaluation mask, and the rectangular portion that communicates with the first circular portion and the circular portion. In the electroplating treatment, the bath temperature was 50 ° C and the current density was 50 A/dm 2 . The time required for the gold plating film thickness of the first circular region to be 0.2 μm was measured in advance, and the same time was used as the plating treatment time. In the plating treatment, in the region facing the first round hole portion of the test piece, there is no plating mask on the nickel plating film, and it is directly sprayed by the hard gold plating solution to become a high current density region, and further, facing the hole portion of the test piece. In the region, since the plating mask is present on the nickel plating film, it is not directly sprayed by the hard gold plating solution, and a low current density region is formed which is lower than the area facing the first circular hole portion. Therefore, when electroplating is performed, the area facing the first circular hole portion of the test piece is a portion to be plated, and the area facing the square hole of the test piece is a portion that does not need plating, and a hard surface is formed on the area facing the square hole. The gold plated film is ideal.
接著,關於所獲得鎖孔形狀的硬質鍍金膜,在圓形部上與矩形部連通位置的反側,圓形部的前端,測量由圓形部前端至矩形部末端每2mm的膜厚。結果如第4圖所示。此外,依據圓形部的整體平均厚度,即距離圓形部前端10mm以 下區域的平均膜厚,計算出析出速度。結果如表2所示。 Next, regarding the hard gold plating film having the shape of the keyhole obtained, the front end of the circular portion was on the opposite side to the position where the rectangular portion communicated, and the front end of the circular portion was measured for a film thickness of 2 mm from the tip end of the circular portion to the end of the rectangular portion. The result is shown in Figure 4. In addition, according to the overall average thickness of the circular portion, that is, 10 mm from the front end of the circular portion The average film thickness of the lower region was calculated and the deposition rate was calculated. The results are shown in Table 2.
在第4圖中,横軸表示離圓形部前端的距離。横軸0~10mm區域為需要電鍍的部份,横軸10~30mm的區域為不需要電鍍的部份。 In Fig. 4, the horizontal axis represents the distance from the front end of the circular portion. The area of 0 to 10 mm on the horizontal axis is the part to be plated, and the area on the horizontal axis of 10 to 30 mm is the part that does not need to be plated.
由第4圖可知,硬質鍍金溶液10、11在不需要電鍍部份的横軸10~30mm區域中,皆形成硬質鍍金。然而,與硬質鍍金溶液11相比,硬質鍍金溶液10在横軸10~30mm區域中的膜厚整體上較小。特別是,膜厚為約0μm時,硬質鍍金溶液10對應至横軸超過18μm的區域,而硬質鍍金溶液11對應至横軸超過24μm的區域。由此可知,與溶液比重18.4°Be’的硬質鍍金溶液11相比,溶液比重10.0°Be’的硬質鍍金溶液10具有在不需要電鍍部份抑制金析出的良好效果。 As can be seen from Fig. 4, the hard gold plating solutions 10 and 11 are formed of hard gold plating in a region of 10 to 30 mm in the horizontal axis where the plating portion is not required. However, the film thickness of the hard gold plating solution 10 in the region of 10 to 30 mm on the horizontal axis is smaller overall than that of the hard gold plating solution 11. In particular, when the film thickness is about 0 μm, the hard gold plating solution 10 corresponds to a region in which the horizontal axis exceeds 18 μm, and the hard gold plating solution 11 corresponds to a region in which the horizontal axis exceeds 24 μm. From this, it is understood that the hard gold plating solution 10 having a solution specific gravity of 10.0°Be' has a good effect of suppressing gold precipitation in the plating portion, as compared with the hard gold plating solution 11 having a specific gravity of 18.4°Be'.
此外,如表2所示,與溶液比重較大的硬質鍍金溶液11相較,明顯地硬質鍍金溶液10的析出速度較大。因此,與硬質鍍金溶液11相比,硬質鍍金溶液10在需要電鍍部份的圓形部中可在短時間獲得所欲的厚度。此外,比起硬質鍍金溶液10,硬質鍍金溶液11要在圓形部上形成所欲厚度需要更增加電鍍時間,當電鍍時間增加時,不需要電鍍部份之矩形部的膜厚會進一步增加。也就是說,在不需要電鍍部份的金析出會 進一步增加。 Further, as shown in Table 2, the precipitation rate of the hard gold plating solution 10 was significantly higher than that of the hard gold plating solution 11 having a large specific gravity. Therefore, the hard gold plating solution 10 can obtain a desired thickness in a short portion of the circular portion requiring the plating portion as compared with the hard gold plating solution 11. Further, compared with the hard gold plating solution 10, it is necessary to increase the plating time to form a desired thickness on the circular portion of the hard gold plating solution 11. When the plating time is increased, the film thickness of the rectangular portion which does not require the plating portion is further increased. That is to say, in the case of gold precipitation that does not require plating Further increase.
藉由以上說明,若使用本發明硬質鍍金溶液,不會發生不良的外觀,僅在需要的部份進行金析出,在不需要的部份確實地抑制金析出。因此,利用本發明硬質鍍金溶液對連接器等電子產品的端子進行部份電鍍,在焊接處理時,可抑制在不需要部份發生焊料上爬,且減少昂貴金材料的浪費,抑制成本增加。 As described above, when the hard gold plating solution of the present invention is used, a poor appearance does not occur, and gold deposition is performed only in a required portion, and gold precipitation is surely suppressed in an unnecessary portion. Therefore, by using the hard gold plating solution of the present invention to partially plate the terminals of electronic products such as connectors, it is possible to suppress the occurrence of solder climbing on unnecessary portions during the soldering process, and to reduce waste of expensive gold materials and to suppress an increase in cost.
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