TWI625776B - Semiconductor device manufacturing method, semiconductor device, and protective tape - Google Patents

Abstract

The present invention provides a method of fabricating a semiconductor device capable of reducing breakage of a bump electrode.

A method of manufacturing a semiconductor device according to the present invention includes: a protective tape attaching step of attaching a protective tape having an adhesive layer to a wafer surface on which a protruding electrode is formed; and a polishing processing step of attaching a protective tape to the surface The opposite side is subjected to a grinding treatment; the adhesive tape attaching step is performed by attaching an adhesive tape to the polishing treatment surface; and the dicing treatment step is performed by performing a dicing treatment on the wafer to which the adhesive tape is attached to obtain a single semiconductor wafer; And a hardening step of hardening the adhesive layer; and the hardening step is performed before the dicing step.

Description

Semiconductor device manufacturing method, semiconductor device, and protective tape

The present invention relates to a method of fabricating a semiconductor device that diced a wafer after a previous step into individual semiconductor wafers.

Previously, the subsequent steps of the semiconductor fabrication process for flip chip fabrication were performed as follows. First, an adhesive sheet or an adhesive tape called a back surface polishing tape is bonded to a bump electrode forming surface of a wafer on which a plurality of bump electrodes are formed, and in this state, the opposite surface of the bump electrode forming surface is ground to a specific thickness. After the grinding is completed, the back surface polishing tape is peeled off, and the wafer is diced to form a single semiconductor wafer. The semiconductor wafer is then flip-chip mounted onto another semiconductor wafer or substrate. Further, the first supply type or the post supply type primer is cured to reinforce the semiconductor wafer.

However, in recent years, the thickness of the semiconductor wafer has been reduced to 50 μm or less. Therefore, in the subsequent steps such as dicing, picking, and mounting, the protruding electrodes of the semiconductor wafer may be damaged due to external pressure.

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-28734

The present invention has been made in view of the above-described actual circumstances, and provides a method of manufacturing a semiconductor device capable of reducing damage of a bump electrode.

In order to solve the above problems, a method of manufacturing a semiconductor device according to the present invention is characterized in that: a bonding step of attaching a protective tape having an adhesive layer to a wafer surface on which a bump electrode is formed; and a polishing process step Grinding treatment is performed on the opposite side of the protective tape attachment surface; the adhesive tape attaching step is attached to the polishing treatment surface to adhere the adhesive tape; and the crystal cutting treatment step is to cut the wafer to which the adhesive tape is attached a single-piece semiconductor wafer obtained by crystal treatment; and a hardening step of hardening the above-mentioned adhesive layer; and the hardening step is performed before the above-described crystal cutting treatment step.

Moreover, the semiconductor device of the present invention includes a semiconductor wafer including a bump electrode and an adhesive layer formed on a surface on which the bump electrode is formed, and a circuit substrate having an electrode facing the bump electrode.

Moreover, the present invention is a protective tape used in the method for producing a semiconductor device described above, characterized in that the adhesive layer, the thermoplastic resin layer, and the base film layer are sequentially laminated.

According to the present invention, the adhesive layer of the wafer surface on which the bump electrode is formed is hardened to reinforce the bump electrode before the dicing step, so that the bump electrode can be reduced in subsequent steps such as dicing, picking, and mounting. damaged.

10‧‧‧Protective zone

11‧‧‧ adhesive layer

12‧‧‧ thermoplastic resin layer

13‧‧‧Substrate film

21‧‧‧ wafer

22‧‧‧ protruding electrode

30‧‧‧Adhesive tape

31‧‧‧Adhesive layer

32‧‧‧Substrate film

Fig. 1 is a schematic cross-sectional view showing a protective tape.

Fig. 2 is a schematic cross-sectional view showing a step of attaching a protective tape.

Fig. 3 is a schematic cross-sectional view showing a grinding step.

Fig. 4 is a schematic cross-sectional view showing the step of attaching the adhesive tape.

Fig. 5 is a schematic cross-sectional view showing a step of peeling off the protective tape.

Fig. 6 is a schematic cross-sectional view showing a hardening step.

Fig. 7 is a schematic cross-sectional view showing a dicing process step.

Fig. 8 is a schematic cross-sectional view showing an extension step.

Fig. 9 is a schematic cross-sectional view showing a pickup step.

Figure 10 is a cross-sectional view showing the outline of the constitutional steps.

Hereinafter, embodiments of the present invention will be described in detail in the following order.

1. Method of manufacturing a semiconductor device

2. Examples

<1. Method of Manufacturing Semiconductor Device>

A method of manufacturing a semiconductor device according to the present embodiment includes a protective tape attaching step of attaching a protective tape having an adhesive layer to a wafer surface on which a bump electrode is formed, and a polishing processing step of attaching a protective tape to the protective tape The opposite side is subjected to a grinding process; the adhesive tape attaching step is to attach the adhesive tape to the polishing treatment surface; and the dicing treatment step is to perform a dicing process on the wafer to which the adhesive tape is attached to obtain a single semiconductor wafer And a hardening step of hardening the adhesive layer; and the hardening step is performed before the dicing step. That is, the hardening step is performed before any of the steps of the grinding treatment step, the adhesive tape attaching step, or the dicing treatment step.

As the adhesive for the adhesive layer of the protective tape, for example, a thermosetting type such as a thermal anion curing type, a thermal cation hardening type, or a thermal radical curing type, a photocuring type such as a photocation hardening type or a photo radical curing type, or the like may be used. A heat/light hardening type that is used in the same manner as the above.

Further, the protective tape preferably has an adhesive layer, a thermoplastic resin layer, and a base film layer laminated in this order, and further has a peeling step of peeling off the thermoplastic resin layer and the base film layer after the polishing treatment step. That is, the peeling step is performed after any one of the polishing treatment step, the adhesive tape attaching step, or the crystal cutting treatment step. Thereby, the adhesive layer can be transferred to the wafer surface on which the bump electrode is formed, and the bump electrode forming surface can be reinforced.

Moreover, it is preferable to have a removal step of removing the residue of the adhesive on the bump electrode after the peeling step. Thereby, it is possible to prevent poor connection at the time of construction. Further, the removing step is preferably performed after the hardening step. Thereby, the residue of the adhesive can be easily removed.

According to the method of manufacturing a semiconductor device, the adhesive layer on the wafer surface on which the bump electrode is formed is cured before the dicing step, and the bump electrode is reinforced. Therefore, in subsequent steps such as dicing, picking, and mounting, The damage of the protruding electrodes can be reduced.

Hereinafter, a method of manufacturing a specific semiconductor device will be described. The manufacturing method of the semiconductor device shown as a specific example is as follows, that is, the adhesive layer of the protective tape is a thermosetting type, and a hardening step is performed between the adhesive tape attaching step and the dicing processing step. That is, the manufacturing method of the semiconductor device shown as a specific example has a protective tape attaching step (A) to which a protective tape having an adhesive layer is attached, a polishing step (B), and an adhesive tape attaching step (C) a protective tape stripping step (D); a hardening step (E) for hardening the adhesive layer; a dicing treatment step (F); an extended step (G); a picking step (H); and a coating step (I).

[protective tape]

Fig. 1 is a schematic cross-sectional view showing a protective tape. The protective tape 10 is referred to as a Back Grind Tape, and protects the wafer from scratches, cracks, contamination, and the like in the polishing step. As shown in FIG. 1, the protective tape 10 is sequentially laminated with an adhesive layer 11, a thermoplastic resin layer 12, and a base film layer 13.

The adhesive layer 11 is not particularly limited as long as it is a thermosetting type, and for example, a cationic curing adhesive or a radical curable resin can be used. The cation-curing adhesive contains a thermal cationic polymerization initiator and a cationic polymerization initiator, and the radical-curable adhesive contains a radical curable resin and a thermal radical polymerization initiator.

Examples of the cation curable resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, novolak type epoxy resin, oxetane resin, and alicyclic epoxy resin. And the like, etc., which may be used alone or in combination of two or more.

Examples of the thermal cationic polymerization initiator include a benzyl sulfonium salt, a thiophene sulfonium salt, a tetrahydrothiophene sulfonium salt, a benzyl ammonium salt, a pyridinium salt, a phosphonium salt, a carboxylic acid ester, a sulfonate, and an amine hydrazine. The imine or the like may be used alone or in combination of two or more.

Examples of the radically curable resin include epoxy (meth) acrylates, (meth) acrylate amides, and (meth) acrylate oligomers, and these may be used alone or in combination. Two or more types can be used in combination.

Examples of the thermal radical polymerization initiator include a peroxide and an azo compound. Examples of the peroxide include a peroxydiethyl fluorenyl compound, a peroxyester compound, a hydrogen peroxide compound, a peroxydicarbonate compound, a peroxyketal compound, a dialkyl peroxide compound, and a ketone peroxide. For the compound or the like, one type may be used alone or two or more types may be used in combination.

Further, as the other component, a film forming resin, a curing accelerator, a decane coupling agent, an inorganic filler, an elastomer such as an acryl rubber, or a pigment such as carbon black may be appropriately blended as the other component. Examples of the film-forming resin include a phenoxy resin, an urethane resin, a polyester resin, a styrene-isoprene resin, a nitrile butadiene resin, and the like.

Moreover, the lowest melt viscosity of the adhesive layer 11 is preferably 500 Pa. Above s and 15000Pa. s below. If the minimum melt viscosity is too low, voids may occur in the protective tape attaching step (A). If the minimum melt viscosity is too high, the protruding electrode cannot penetrate the adhesive layer, and it is difficult to fill the adhesive with the adhesive. Between the electrodes.

Further, the elastic modulus of the adhesive layer 11 at 60 ° C is 1 GPa or more and 10 GPa or less, preferably 1 GPa or more and 5 GPa or less. Regardless of whether the elastic modulus is too large or too small, the embedding property of the adhesive layer 11 to the bump electrodes is deteriorated.

Further, the thickness of the adhesive layer 11 is 10% or more and 80% or less, preferably 30% or more and 60% or less of the height of the bump electrode formed on the wafer. If the thickness of the adhesive layer 11 is too small, the effect of reinforcing the bump electrode cannot be obtained, and if the thickness is too large, the bump electrode may not penetrate.

Examples of the thermoplastic resin layer 12 include ethylene-vinyl acetate copolymer (EVA: Ethylene Vinyl Acetate), polyethylene, polypropylene, polyamine, polyacetal, polyethylene terephthalate, and polyparaphenylene. Butylene dicarboxylate, fluororesin, polyphenylene sulfide, polystyrene, ABS resin, acrylic resin, polycarbonate, polyurethane, polyvinyl chloride, polyphenylene ether, etc., which may be used alone or in combination. Use two or more types.

As the base film layer 13, polyethylene terephthalate, polyethylene, or the like can be used. A plastic film such as polypropylene or polyester, or a porous substrate composed of paper, cloth, non-woven fabric or the like.

Further, the protective tape is not limited to the above configuration, and other layers may be formed on the surface of each layer or between adjacent layers.

[(A) Protective tape attachment step]

Fig. 2 is a schematic cross-sectional view showing a step of attaching a protective tape. In the protective tape attaching step, the protective tape 10 is attached to the surface of the wafer 21 on which the bump electrodes 22 are formed.

The wafer 21 has an integrated circuit formed on the surface of a semiconductor such as germanium, and a bump electrode 22 for connection of bumps. The thickness of the wafer 21 is not particularly limited, but is preferably 200 μm or more and 1000 μm or less.

The bump electrode 22 is not particularly limited, and examples thereof include low melting point bumps or high melting point bumps obtained by solder, tin bumps, silver-tin bumps, silver-tin-copper bumps, and gold bumps. , copper bumps, etc. Further, the height of the bump electrode 22 is not particularly limited, but is preferably 10 μm or more and 200 μm or less.

The protective tape 10 is bonded in a state where the formation surface of the bump electrode 22 is in contact with the adhesive layer 11. The thickness of the adhesive layer 11 of the protective tape 10 is 10% or more and 80% or less of the height of the bump electrode 22, so that the bump electrode 22 penetrates the adhesive layer 11 and is buried in the thermoplastic resin layer 12.

In the protective tape attaching step, it is preferable to laminate the protective tape on the wafer surface using a vacuum pressurizing laminator. Thereby, the adhesive can be filled between the bump electrodes while suppressing the occurrence of voids. Further, from the viewpoint of reducing voids, improving wafer adhesion, and preventing warpage after wafer grinding, the bonding temperature is 25° C. or higher and 100° C. or lower, preferably 40° C. or higher and 80° C. or lower.

[(B) Grinding step]

Fig. 3 is a schematic cross-sectional view showing a grinding step. In the grinding step, the opposite side of the attachment surface of the protective tape 10 is subjected to a grinding treatment. The opposite surface of the wafer 21 to which the protective tape 10 is attached is fixed to the grinding device for polishing. The polishing is usually carried out until the thickness of the wafer 21 is 50 μm or more and 600 μm or less. However, in the present embodiment, since the bump electrode 22 is reinforced by the adhesive layer 11, it can be polished to a thickness of 50 μm or less.

[(C) Adhesive tape attachment step]

Fig. 4 is a schematic cross-sectional view showing the step of attaching the adhesive tape. In the adhesive tape attaching step, the adhesive tape 30 is attached to the polishing treatment surface. The adhesive tape 30, which is called a Dicing Tape, is used in the dicing step (F) to protect and fix the wafer 21 and to hold the tape to the picking step (H).

The adhesive tape 30 is not particularly limited, and a known one can be used. Generally, the adhesive tape 30 has an adhesive layer 31 and a base film layer 32. Examples of the pressure-sensitive adhesive layer 31 include an adhesive such as a polyethylene-based, acrylic-based, rubber-based or amine-ester-based adhesive. Further, as the base film layer 32, a plastic film such as polyethylene terephthalate, polyethylene, polypropylene, or polyester, or a porous substrate made of paper, cloth, or nonwoven fabric can be used. Moreover, the attachment means and conditions of the adhesive tape are not particularly limited, and known devices and conditions can be used.

[(D) Protective tape stripping step]

Fig. 5 is a schematic cross-sectional view showing a step of peeling off the protective tape. In the protective tape peeling step, the thermoplastic resin layer 12 and the base film layer 13 of the protective tape 10 are peeled off. That is, the thermoplastic resin layer 12 and the base film layer 13 are removed, and only the adhesive layer 11 remains on the wafer 21.

[(E) hardening step]

Fig. 6 is a schematic cross-sectional view showing a hardening step. In the hardening step, the adhesive layer 11 is hardened. As the curing method and the curing conditions, a known method of curing the thermosetting adhesive can be used.

Further, it is preferable to further have a step of removing the residue of the adhesive on the bump electrode 22 after the hardening step. Thereby, it is possible to prevent poor connection at the time of construction. Further, in the removing step, it is preferred to use abrasive grains for polishing. Thereby, the residue of the adhesive can be completely removed. Further, the average particle diameter of the abrasive grains is preferably 3 μm or less. Thereby, the grinding of the bump electrode 22 can be suppressed.

[(F) Crystal cutting process step]

Fig. 7 is a schematic cross-sectional view showing a dicing process step. In the dicing step, the wafer 21 to which the adhesive tape 30 is attached is subjected to a dicing process to obtain a single semiconductor wafer. The dicing method is not particularly limited, and for example, a known method such as cutting the wafer 21 by a wafer dicing machine and cutting it out can be used.

[(G) Extension Step]

Fig. 8 is a schematic cross-sectional view showing an extension step. In the extending step, for example, the adhesive tape 30 to which the divided plurality of semiconductor wafers are bonded is extended in the radial direction to expand the interval between each semiconductor wafer.

[(H) Pickup step]

Fig. 9 is a schematic cross-sectional view showing a pickup step. In the picking step, the semiconductor wafer attached to the adhesive tape 30 is ejected and peeled off from the lower surface of the adhesive tape 30, and the peeled semiconductor wafer is adsorbed by a collet. The picked semiconductor wafer is stored in a wafer tray or transferred to a wafer mounting nozzle of a flip chip bonding machine.

[(I) Construction Steps]

Figure 10 is a cross-sectional view showing the outline of the constitutional steps. In the structuring step, the semiconductor wafer is connected to the circuit substrate using, for example, a circuit connecting material such as NCF (Non Conductive Film). The circuit board is not particularly limited, and a plastic substrate such as a polyimide substrate or a glass epoxy substrate, a ceramic substrate, or the like can be used. Further, as the connection method, a known method using a heating bonding machine, a reflow furnace, or the like can be used. Further, in the bonding step, the adhesive layer 11 is formed on the surface on which the bump electrode is formed on the semiconductor wafer, so that the void can be suppressed.

According to the above method, a semiconductor device having excellent connection reliability can be obtained with good yield. Further, the obtained semiconductor device includes a semiconductor wafer having a bump electrode and an adhesive layer formed on the surface on which the bump electrode is formed, and a circuit substrate having an electrode facing the bump electrode. Since the adhesive layer 11 is formed on the bump electrode forming surface of the semiconductor wafer, excellent connection reliability can be obtained.

[Examples]

<2. Example>

Hereinafter, embodiments of the invention will be described. In the present embodiment, a protective tape in which an adhesive layer and a thermoplastic resin layer were laminated was produced. Then, the protective tape was attached to the wafer surface on which the bumps were formed, and the adhesion method was evaluated by observing the filling state of the adhesive between the bumps. Further, the bump was observed to evaluate the residue removal method of the adhesive on the bump. Furthermore, the invention is not limited to the embodiments.

<2.1 About the attachment method of the protective tape>

The effect of the lowest melt viscosity of the adhesive layer when the protective tape was attached to the wafer surface on which the bump was formed was investigated.

[attachment method 1]

The thermoplastic resin layer composed of EVA (Ethylene Vinyl Acetate) is laminated on the cover film made of PET (Polyethylene Terephthalate) with an elastic modulus of 2.5 GPa and a minimum melt viscosity of 50,000 Pa. a protective tape of an adhesive layer of 30 μm thick.

Attaching the adhesive layer of the protective tape to the solder bumps formed ( Wafers (size: 5 cm × 5 cm × 50 μm) of = 250 μm, H = 150 μm, pitch = 250 μm) were laminated by a vacuum press type laminator. Then, it was cured in an oven at 160 ° C for 1 hour. The filling state of the adhesive between the bumps was observed, and as a result, the solder bump did not penetrate the adhesive layer.

[attachment method 2]

The elastic modulus of the adhesive layer was set to 2.5 GPa, and the lowest melt viscosity was set to 15000 Pa. In addition to this, a protective tape was produced in the same manner as the attaching method 1. Then, it is laminated on the wafer and cured in the same manner as in the attachment method 1. The filling state of the adhesive between the bumps was observed, and as a result, the adhesive was filled between the bumps in a good state. However, there is a residue of the adhesive on the bump.

[attachment method 3]

The elastic modulus of the adhesive layer was set to 2.5 GPa, and the lowest melt viscosity was set to 2000 Pa. In addition to this, a protective tape was produced in the same manner as the attaching method 1. Then, it is laminated on the wafer and cured in the same manner as in the attachment method 1. The filling state of the adhesive between the bumps was observed, and as a result, the adhesive was filled between the bumps in a good state. However, there is a residue of the adhesive on the bump.

[attachment method 4]

The elastic modulus of the adhesive layer was set to 2.5 GPa, and the lowest melt viscosity was set to 500 Pa. In addition to this, a protective tape was produced in the same manner as the attaching method 1. Then, with the attachment method 1 The same method is laminated on the wafer and cured. The filling state of the adhesive between the bumps was observed, and as a result, the adhesive was filled between the bumps in a good state. However, there is a residue of the adhesive on the bump.

[attachment method 5]

The elastic modulus of the adhesive layer was set to 2.5 GPa, and the lowest melt viscosity was set to 100 Pa. In addition to this, a protective tape was produced in the same manner as the attaching method 1. Then, it is laminated on the wafer and cured in the same manner as in the attachment method 1. The filling state of the adhesive between the bumps was observed, and as a result, voids were generated in the adhesive near the root of the bump.

[attachment method 6]

The elastic modulus of the adhesive layer was set to 2.5 GPa, and the lowest melt viscosity was set to 500 Pa. In addition to this, a protective tape was produced in the same manner as the attaching method 1. Further, it was laminated in the same manner as in the attachment method 1 except that it was laminated by a pressure bonding machine. The filling state of the adhesive between the bumps was observed, and as a result, voids were generated in the adhesive near the root of the bump.

The evaluation results of the attachment methods 1 to 6 are shown in Table 1.

When the lowest melt viscosity of the adhesive layer is too high as in the attaching method 1, the bump does not penetrate the adhesive layer, and when the lowest melt viscosity of the adhesive layer is too low as in the attaching method 5, the convexity is convex. A void is created near the root of the block. Moreover, the pressure is applied as in the attachment method 6 When the type of laminating machine is laminated with a protective tape, a gap is also generated in the vicinity of the root of the bump.

On the other hand, the minimum melt viscosity of the adhesive layer is 500Pa as in the attachment method 2~4. Above s and 50000Pa. In the case where the protective tape is laminated by a vacuum pressurizing laminator, the adhesive can be filled between the bumps in a good state.

<2.1 About the removal method of residue>

The method of removing the residue of the adhesive on the bump of the wafer to which the protective tape was attached by the attaching method 3 was examined.

[Removal method 1]

The bump forming surface of the wafer was washed in a direct plasma mode for 15 minutes using a plasma dry cleaning apparatus (manufactured by Samco, gas: Ar/H). The bumps were observed, and as a result, the residue of the adhesive was not removed.

[Removal method 2]

The bump forming surface of the wafer was washed in a direct plasma mode for 30 minutes using a plasma dry cleaning apparatus (manufactured by Samco, gas: Ar/H). The bumps were observed, and as a result, the residue of the adhesive was not removed.

[Removal method 3]

The bump forming surface of the wafer was washed in a reactive ion etching mode for 15 minutes using a plasma dry cleaning apparatus (manufactured by Samco, gas: Ar/H). The bumps were observed, and as a result, the residue of the adhesive was not removed.

[Removal method 4]

The bump forming surface of the wafer was washed in a reactive ion etching mode for 30 minutes using a plasma dry cleaning apparatus (manufactured by Samco, gas: Ar/H). Observing the bumps, the result is then The residue of the agent was not removed.

[Removal method 5]

The bump forming surface of the wafer was polished using a grinder (manufactured by Struers) using abrasive grains having an average particle diameter (D50) of 9 μm for 5 minutes. The bumps were observed, and as a result, although the residue of the adhesive was removed, the bump grinding was observed.

[Removal method 6]

The bump forming surface of the wafer was polished using a grinder (manufactured by Struers) using an abrasive grain having an average particle diameter (D50) of 3 μm for 5 minutes. The bump was observed, and as a result, although the residue of the adhesive was almost removed, a part was not removed. Also, no bump grinding was observed.

[Removal method 7]

The bump forming surface of the wafer was polished using a grinder (manufactured by Struers) using an abrasive grain having an average particle diameter (D50) of 1 μm for 5 minutes. The bumps were observed, and as a result, the residue of the adhesive was removed, and no bump grinding was observed.

[Removal method 8]

The protective tape was not attached, and the wafer surface on which the bumps were formed was polished by the abrasive paper for 5 minutes. The bump was observed, and as a result, although the residue of the adhesive was removed, the occurrence of cracks was observed in the vicinity of the root of the bump.

The evaluation results of the removal methods 1 to 8 are shown in Table 2 in a list.

When the plasma dry cleaning device was used as in the removal methods 1 to 4, the residue of the adhesive on the bump was not removed. Further, in the case where the protective tape is attached without the protective tape as in the removal method 8, a crack is generated in the vicinity of the root portion of the bump.

On the other hand, in the case where the abrasive grains are used for polishing as in the removal methods 5 to 7, the residue of the adhesive on the bumps can be removed. Further, by using abrasive grains having an average particle diameter of 3 μm or less, the bump grinding can be suppressed.

Claims (13)

A method of manufacturing a semiconductor device, comprising: a protective tape attaching step of attaching a protective tape having an adhesive layer to a wafer surface on which a protruding electrode is formed; and a polishing processing step of attaching the protective tape to the protective tape The opposite side is subjected to a grinding treatment; an adhesive tape attaching step is to attach an adhesive tape to the polishing treatment surface; and a crystal cutting treatment step is to perform a crystal cutting process on the wafer to which the adhesive tape is attached to obtain a single piece a semiconductor wafer; and a hardening step of completely hardening the adhesive layer; and the hardening step is performed before the dicing step. The method of manufacturing a semiconductor device according to claim 1, wherein the protective tape is sequentially laminated with the adhesive layer, the thermoplastic resin layer, and the base film layer, and further after the polishing treatment step A peeling step of peeling off the thermoplastic resin layer and the base film layer. The method for producing a semiconductor device according to claim 1 or 2, wherein the adhesive layer has a minimum melt viscosity of 500 Pa ‧ or more and 15,000 Pa ‧ or less. The method of manufacturing a semiconductor device according to claim 1 or 2, wherein the thickness of the adhesive layer is 10% or more and 80% or less of the height of the bump electrode. The method of manufacturing a semiconductor device according to claim 3, wherein the thickness of the adhesive layer is 10% or more and 80% or less of the height of the bump electrode. The method of manufacturing a semiconductor device according to claim 1 or 2, wherein in the protective tape attaching step, the protective tape is laminated on the wafer surface using a vacuum pressurizing laminator. The method of manufacturing a semiconductor device according to claim 3, wherein in the protective tape attaching step, the protective tape is laminated on the wafer surface using a vacuum pressurizing laminator. The method of manufacturing a semiconductor device according to claim 4, wherein in the protective tape attaching step, the protective tape is laminated on the wafer surface using a vacuum pressurizing laminator. The method of manufacturing a semiconductor device according to claim 2, further comprising the step of removing the residue of the adhesive on the bump electrode after the stripping step. The method of manufacturing a semiconductor device according to claim 9, wherein the removing step is performed after the hardening step. The method of manufacturing a semiconductor device according to claim 10, wherein in the removing step, the residue of the adhesive is removed by polishing using abrasive grains. The method for producing a semiconductor device according to claim 11, wherein the abrasive grains have an average particle diameter of 3 μm or less. A protective tape which is used in a method of manufacturing a semiconductor device according to any one of claims 1 to 12, wherein the adhesive layer, the thermoplastic resin layer, and the substrate film layer are sequentially laminated. .