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TWI623378B - Grinding device - Google Patents

Grinding device Download PDF

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Publication number
TWI623378B
TWI623378B TW106103725A TW106103725A TWI623378B TW I623378 B TWI623378 B TW I623378B TW 106103725 A TW106103725 A TW 106103725A TW 106103725 A TW106103725 A TW 106103725A TW I623378 B TWI623378 B TW I623378B
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TW
Taiwan
Prior art keywords
polishing
head
load
wafer
polished
Prior art date
Application number
TW106103725A
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Chinese (zh)
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TW201741070A (en
Inventor
Hiroaki Omagari
大曲啓明
Masateru Tomiyasu
冨安正輝
Yu Murofushi
室伏勇
Original Assignee
Toshiba Kikai Kabushiki Kaisha
東芝機械股份有限公司
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Application filed by Toshiba Kikai Kabushiki Kaisha, 東芝機械股份有限公司 filed Critical Toshiba Kikai Kabushiki Kaisha
Publication of TW201741070A publication Critical patent/TW201741070A/en
Application granted granted Critical
Publication of TWI623378B publication Critical patent/TWI623378B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • H10P52/00

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

本發明提供一種研磨裝置,是在「研磨體隔著彈性機構由頭部所支承」之類型的研磨裝置中,可避免從位置控制切換成荷重控制時,所產生的對研磨時之目標荷重的過衝。 The invention provides a grinding device, which is a type of "grinding body supported by the head through an elastic mechanism", which can avoid the target load during grinding when switching from position control to load control. Overshoot.

本發明的研磨裝置(100)具備:保持部(60),用來保持被研磨材(Wa);研磨體(10),用來研磨被研磨材(Wa);頭部(30),隔著彈性機構(32)支承研磨體(10);驅動機構(24),促使頭部(30)朝Z座標方向移動;控制部(50),用來控制驅動機構(24);位置感測器(34),用來測量研磨體(10)相對於頭部(30)的位置,荷重控制,是依據位置感測器(34)的測量值與彈性機構(32)的彈簧常數所執行。 The polishing device (100) of the present invention includes a holding portion (60) for holding the material to be polished (Wa), a polishing body (10) for polishing the material to be polished (Wa), and a head portion (30) through The elastic mechanism (32) supports the grinding body (10); the driving mechanism (24) causes the head (30) to move in the direction of the Z coordinate; the control unit (50) is used to control the driving mechanism (24); the position sensor ( 34), which is used to measure the position of the abrasive body (10) relative to the head (30), and the load control is performed according to the measured value of the position sensor (34) and the spring constant of the elastic mechanism (32).

Description

研磨裝置 Grinding device [相關申請案的參考] [Reference to related applications]

本申請案,是依據2016年2月5日提出申請之日本第2016-021315號專利申請案、及2016年12月27日提出申請之日本第2016-254137號專利申請案,並主張前述兩件申請案作為優先權,該兩件優先權的所有內容,藉由參考而編寫入本申請案。 This application is based on Japanese Patent Application No. 2016-021315 filed on February 5, 2016, and Japanese Patent Application No. 2016-254137 filed on December 27, 2016, and claims the foregoing two The application is a priority, and the entire contents of these two priorities are incorporated into this application by reference.

本發明關於研磨裝置。 The present invention relates to a polishing apparatus.

傳統以來,就用來研磨由半導體材料所形成之晶圓表面等的研磨裝置而言,譬如已知有如同國際公開2013/038573號所記載的「使用被旋轉驅動之研磨墊」的研磨裝置。一般而言,研磨墊被設在旋轉軸的前端,含有旋轉機構及旋轉軸的研磨墊,是透過彈性機構由頭部所支承。頭部,是透過驅動機構由裝置本體所支承。 Conventionally, a polishing device for polishing a wafer surface or the like formed of a semiconductor material is known, for example, a polishing device using a polishing pad driven by rotation as described in International Publication No. 2013/038573. Generally, a polishing pad is provided at the front end of a rotating shaft, and a polishing pad including a rotating mechanism and a rotating shaft is supported by a head through an elastic mechanism. The head is supported by the device body through a drive mechanism.

就驅動機構的控制方法而言,譬如可採用如日本特開昭59-219152號公報所記載之「組合了位置控制 與荷重控制」的方法。該控制方法,為以下所述的方法:在研磨墊接觸於晶圓且達成研磨時的目標荷重之前,依據該研磨墊的位置(座標)來控制驅動機構(位置控制),當達成前述目標荷重後,則依據產生於研磨墊與晶圓間之接觸面的壓力,對驅動機構進行控制(荷重控制)。當研磨時的目標荷重達成時之頭部的位置(Z座標),是依據研磨墊之研磨面的面積、與彈性機構的彈簧常數(spring constant)所決定。 As for the control method of the drive mechanism, for example, "combined position control" described in Japanese Patent Application Laid-Open No. 59-219152 can be used. And load control. " This control method is the method described below: before the polishing pad contacts the wafer and reaches the target load during polishing, the driving mechanism (position control) is controlled according to the position (coordinates) of the polishing pad, and when the aforementioned target load is reached Then, the driving mechanism is controlled (load control) according to the pressure generated at the contact surface between the polishing pad and the wafer. The position of the head (Z coordinate) when the target load during polishing is reached is determined based on the area of the polishing surface of the polishing pad and the spring constant of the elastic mechanism.

施加於研磨墊的荷重,譬如是由設在研磨墊之旋轉軸上方的測力計(load cell)所測得。測量的順序如以下所述。亦即,使頭部沿著Z座標軸(垂直方向軸)下降(朝接近晶圓的方向移動),使研磨墊的研磨面抵接於晶圓。伴隨於此,彈性機構(螺旋彈簧)將產生變形,相對於頭部,使研磨墊及旋轉軸朝上方相對移動。如此一來,旋轉軸的上端部壓附於測力計,測力計內的應變計(strain gage)產生變形,測量「旋轉軸的上端部按壓應變計的力量」。然後,為了使「由測力計所測得的力」形成目標荷重,調整頭部的Z座標值。 The load applied to the polishing pad is measured, for example, by a load cell provided above the rotation axis of the polishing pad. The measurement sequence is as follows. That is, the head is lowered (moved toward the wafer) along the Z coordinate axis (vertical axis), and the polishing surface of the polishing pad is brought into contact with the wafer. Along with this, the elastic mechanism (the coil spring) is deformed, and the polishing pad and the rotary shaft are relatively moved upward relative to the head. In this way, the upper end of the rotating shaft is pressure-bonded to the dynamometer, and the strain gage in the dynamometer is deformed, and the "force of pressing the strain gage on the upper end of the rotating shaft" is measured. Then, in order to make the "force measured by the dynamometer" a target load, the Z coordinate value of the head is adjusted.

在如同以上的研磨裝置中,當執行荷重控制時,一旦研磨體通過「存有微小的突起和異物的場所」,研磨墊將急遽地朝上方移動(被頂起),使測力計的測量值急遽上升。追隨著這種急遽的荷重變化執行高精確度的荷重控制,一般來說是困難的。此外,在高精確度的測力計中,由於可測量的荷重範圍較狹小,恐有無法執行適當的 荷重測量的疑慮。 In the grinding device like the above, when the load control is performed, once the grinding body passes through "the place where there are tiny protrusions and foreign objects", the polishing pad will suddenly move upward (lifted up) to make the measurement by the dynamometer The value increased sharply. It is generally difficult to perform high-accuracy load control following such rapid load changes. In addition, in high-accuracy dynamometers, due to the narrow range of load that can be measured, it may not be possible to perform appropriate Doubts about load measurement.

本案的發明人,反覆地深入檢討的結果,發現藉由依據位置感測器(譬如,線性標度尺)與彈性機構的彈簧常數執行荷重控制,能擴大可測量的荷重範圍,且即使產生急劇的荷重變化,也能以高精確度執行研磨加工。 The inventor of this case repeatedly and thoroughly reviewed the results, and found that by performing load control based on the position sensor (for example, a linear scale) and the spring constant of the elastic mechanism, the measurable load range can be expanded, and even if a sudden It is possible to perform grinding with high accuracy even when the load changes.

本發明,是基於上述的見解所發展的發明。亦即,本發明的目的是提供一種:擴大「施加於研磨體之荷重」的偵測範圍,即使研磨體通過「存在有微小的突起和異物的場所」,也能維持高精確度的研磨加工的研磨裝置。 The present invention has been developed based on the above findings. That is, it is an object of the present invention to provide a method for expanding the detection range of "load applied to a grinding body" and maintaining a high-precision grinding process even if the grinding body passes through "a place where there are minute protrusions and foreign objects". Grinding device.

本發明為研磨裝置,其特徵為具備:保持部,用來保持被研磨材;研磨體,用來研磨被前述保持部所保持的被研磨材;頭部,隔著彈性機構支承前述研磨材;驅動機構,促使前述頭部相對於前述被研磨材,朝向「與該被研磨材之間的分離距離產生變化」的方向形成相對移動;控制部,連接於前述驅動機構,用來控制前述驅動機構,在前述彈性機構,朝向抵銷前述頭部之荷重的方向提供彈性力。 The present invention is a polishing device, comprising: a holding portion for holding the material to be polished; a polishing body for polishing the material to be polished held by the holding portion; a head portion supporting the polishing material via an elastic mechanism; The driving mechanism causes the head to move relative to the material to be polished in a direction that "the separation distance from the material to be polished changes"; the control unit is connected to the driving mechanism and controls the driving mechanism In the elastic mechanism, elastic force is provided in a direction to offset the load of the head.

根據本發明,由於可不透過測力計等來測量施加於研磨體的荷重,故可提供一種:能擴大該荷重的偵測範圍,即使研磨體通過「存在有微小的突起和異物的場所」,也能維持高精確度的研磨加工的研磨裝置。 According to the present invention, since the load applied to the abrasive body can be measured without passing through a dynamometer or the like, it is possible to provide a method that can expand the detection range of the load even if the abrasive body passes through "a place where there are minute protrusions and foreign objects", A polishing device capable of maintaining a high-precision polishing process.

前述研磨裝置,亦可具備連接於前述控制部,用來測量前述研磨體對前述頭部之位置的位置感測器。在該場合中,可正確地測量研磨體對頭部的相對位置。 The polishing device may further include a position sensor connected to the control unit and configured to measure a position of the polishing body with respect to the head. In this case, the relative position of the abrasive body to the head can be accurately measured.

前述位置感測器,亦可為線性標度尺。在該場合中,可容易且正確地測量研磨體對頭部的相對位置。 The aforementioned position sensor may also be a linear scale. In this case, the relative position of the abrasive body to the head can be easily and accurately measured.

前述控制部,亦可形成:依據前述位置感測器的測量值與前述彈性機構的彈簧常數,計算被施加於前述研磨體的荷重,而控制該荷重。在該場合中,可正確地控制研磨體的位置。 The control unit may be configured to calculate a load to be applied to the abrasive body based on a measurement value of the position sensor and a spring constant of the elastic mechanism, and control the load. In this case, the position of the polishing body can be accurately controlled.

根據本發明,施加於研磨體的荷重並非藉由測力計等直接測量,故可提供一種:能擴大該荷重的偵測範圍,即使研磨體通過「存在有微小的突起和異物的場所」,也能維持高精確度的研磨加工的研磨裝置。 According to the present invention, the load applied to the grinding body is not directly measured by a dynamometer or the like, so it can provide a method that can expand the detection range of the load, even if the grinding body passes "a place where there are tiny protrusions and foreign objects", A polishing device capable of maintaining a high-precision polishing process.

Wa‧‧‧被研磨材(晶圓) Wa‧‧‧ Abrasive material (wafer)

10‧‧‧研磨體 10‧‧‧ grinding body

11‧‧‧心軸 11‧‧‧ mandrel

12‧‧‧研磨墊 12‧‧‧ Abrasive pad

20‧‧‧裝置本體 20‧‧‧device body

21‧‧‧塔柱 21‧‧‧ Tower

21a‧‧‧一側面 21a‧‧‧ one side

22‧‧‧臂 22‧‧‧ arm

23‧‧‧基座 23‧‧‧ base

23a‧‧‧上表面 23a‧‧‧upper surface

24‧‧‧驅動機構 24‧‧‧Drive mechanism

30‧‧‧頭部 30‧‧‧ Head

31‧‧‧研磨體支承構件 31‧‧‧ Abrasive body support member

31a‧‧‧凸緣部 31a‧‧‧flange

32‧‧‧彈性機構 32‧‧‧Flexible mechanism

32a‧‧‧加壓彈簧 32a‧‧‧Pressure spring

32b‧‧‧平衡用彈簧 32b‧‧‧Balance spring

32c‧‧‧平衡用彈簧 32c‧‧‧Balance spring

33‧‧‧支承體 33‧‧‧ support

34‧‧‧線性標度尺(位置感測器) 34‧‧‧ Linear Scale (Position Sensor)

34a‧‧‧固定體 34a‧‧‧Fixed body

34b‧‧‧可動體 34b‧‧‧movable body

35‧‧‧蓋 35‧‧‧ cover

35a‧‧‧貫穿孔 35a‧‧‧through hole

50‧‧‧控制部 50‧‧‧Control Department

51‧‧‧偵測部 51‧‧‧detection department

52‧‧‧記憶部 52‧‧‧Memory Department

53‧‧‧判定部 53‧‧‧Judgment Division

54‧‧‧壓力評價部 54‧‧‧Pressure Evaluation Department

60‧‧‧工作台 60‧‧‧Workbench

60a‧‧‧載置面 60a‧‧‧mounting surface

61‧‧‧支承塊 61‧‧‧Support block

62‧‧‧突條 62‧‧‧ protrusion

70‧‧‧底座 70‧‧‧ base

71‧‧‧平行溝 71‧‧‧ Parallel trench

100‧‧‧研磨裝置 100‧‧‧ grinding device

第1圖:是顯示本發明其中一種實施形態之研磨裝置 的概略立體圖。 Fig. 1: A polishing device showing one embodiment of the present invention Sketchy perspective view.

第2圖:是顯示第1圖之研磨裝置的頭部內部構造的概略立體圖。 Fig. 2 is a schematic perspective view showing the internal structure of the head of the polishing apparatus of Fig. 1.

第3圖:是顯示從第2圖的左上方,觀看第1圖之研磨裝置的頭部的概略側視圖。 FIG. 3 is a schematic side view showing the head of the polishing apparatus of FIG. 1 as viewed from the upper left of FIG. 2.

第4圖:是在「平行於第3圖的紙面,且通過心軸(spindle)之軸心」的平面中,第3圖之頭部的概略剖面圖。 Fig. 4 is a schematic cross-sectional view of the head of Fig. 3 in a plane "parallel to the paper surface of Fig. 3 and passing through the axis of the spindle".

第5圖:是概略地顯示第1圖之研磨裝置的控制裝置的塊狀圖。 Fig. 5 is a block diagram schematically showing a control device of the polishing device of Fig. 1.

以下,參考圖面詳細地說明本發明的其中一種實施形態。 Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

第1圖,是顯示本發明其中一種實施形態之研磨裝置100的概略立體圖。如第1圖所示,本實施形態的研磨裝置100具備:底座70;工作台60,被設在底座70上,作為用來保持被研磨材(晶圓Wa)的保持部;研磨體10,用來研磨工作台60所保持的被研磨材;頭部30,隔著彈性機構32(請參考第2圖)支承研磨體10;驅動機構24,使頭部30相對於裝置本體20朝Z座標方向(第1圖中的上下方向)移動;控制部50,連接於驅動機構24,用來控制該驅動機構24。 FIG. 1 is a schematic perspective view showing a polishing apparatus 100 according to one embodiment of the present invention. As shown in FIG. 1, the polishing apparatus 100 according to this embodiment includes a base 70, a table 60 provided on the base 70 as a holding portion for holding a material to be polished (wafer Wa), and a polishing body 10, It is used to grind the material to be ground held by the table 60; the head 30 supports the grinding body 10 via an elastic mechanism 32 (refer to FIG. 2); the driving mechanism 24 makes the head 30 toward the Z coordinate with respect to the device body 20 The control unit 50 is connected to the driving mechanism 24 and controls the driving mechanism 24.

其中,工作台(保持部)60,是用來保持作 為被研磨材之圓盤狀的晶圓Wa的構件。工作台60,是由「被配置於底座70上之長方體狀的支承塊61」所支承。 Among them, the table (holding section) 60 is used to hold the work It is a member of a disc-shaped wafer Wa that is a material to be polished. The table 60 is supported by the "cuboid-shaped support block 61 arranged on the base 70".

此外,研磨體10,是用來研磨工作台60所保持之晶圓Wa的構件。如第1圖所示,該研磨體10具有:心軸11;被安裝於該心軸11之一端部(第1圖的下端部)的研磨墊12。本實施形態的研磨墊12,採用直徑為10mm的圓盤狀物。 The polishing body 10 is a member for polishing the wafer Wa held by the table 60. As shown in FIG. 1, the polishing body 10 includes a mandrel 11 and a polishing pad 12 attached to one end portion (the lower end portion in FIG. 1) of the mandrel 11. The polishing pad 12 of this embodiment is a disc-shaped object having a diameter of 10 mm.

本實施形態的裝置本體20為以下所述的構件:隔著「使頭部30相對於晶圓Wa形成相對移動」的驅動機構24,支承該頭部30。如第1圖所示,裝置本體20具有:長方體狀的塔柱(column)21;其中一端隔著驅動機構24支承於塔柱21的一側面21a上之圓柱狀的臂22;在上表面23a支承著塔柱21之長方體狀的基座23。在臂22的另一端安裝有頭部30,而形成藉由驅動機構24使臂22在塔柱21的前述一側面21a上,朝垂直方向(第1圖的Z座標方向)移動。如此一來,可執行頭部30於Z座標方向的定位。 The apparatus body 20 of this embodiment is a member that supports the head 30 via a drive mechanism 24 that “relatively moves the head 30 relative to the wafer Wa”. As shown in FIG. 1, the device body 20 includes a rectangular parallelepiped column 21, one end of which is a cylindrical arm 22 supported on one side 21 a of the column 21 via a driving mechanism 24, and an upper surface 23 a A rectangular parallelepiped base 23 is supported by the tower column 21. A head 30 is attached to the other end of the arm 22, and the driving mechanism 24 is used to move the arm 22 on the one side surface 21a of the tower 21 in a vertical direction (Z coordinate direction in FIG. 1). In this way, the positioning of the head 30 in the Z coordinate direction can be performed.

此外,本實施形態的塔柱21,可藉由已知的驅動機構,在基座23上朝臂22的長度方向(第1圖的X座標方向)移動,如此一來,可執行頭部30於X座標方向的定位。 In addition, the tower 21 of this embodiment can be moved in the length direction of the arm 22 (the X coordinate direction in FIG. 1) on the base 23 by a known driving mechanism. In this way, the head 30 can be executed. Positioning in the X coordinate direction.

此外,如第1圖所示,底座70,是用來支承工作台60的支承塊61及裝置本體20的構件。具體地說,工作台60及支承塊61,在底座70的上表面,被配 置在對應於研磨體10的位置,本實施形態,在支承塊61的下表面設有:卡合於「沿著第1圖的Y座標方向刻畫於底座70上之2條平行溝71」的突條62,而形成該支承塊61可沿著該2條平行溝71移動。如此一來,可執行工作台60於Y座標方向的定位,亦即,頭部30相對於工作台60在Y座標方向的定位。本實施形態的工作台60,具有譬如直徑200mm的載置面60a。 In addition, as shown in FIG. 1, the base 70 is a member for supporting the support block 61 of the table 60 and the apparatus body 20. Specifically, the table 60 and the support block 61 are arranged on the upper surface of the base 70. At the position corresponding to the grinding body 10, in the present embodiment, the lower surface of the support block 61 is provided with: "two parallel grooves 71 carved on the base 70 along the Y coordinate direction of Fig. 1" The protrusion 62 forms the support block 61 to move along the two parallel grooves 71. In this way, the positioning of the table 60 in the Y coordinate direction can be performed, that is, the positioning of the head 30 relative to the table 60 in the Y coordinate direction. The table 60 of this embodiment has a mounting surface 60a having a diameter of 200 mm, for example.

接下來,針對頭部30進行更進一步的說明。第2圖,是顯示第1圖所示之研磨裝置100的頭部30之內部構造的概略立體圖,第3圖,是從第2圖的左上方觀看第1圖所示之研磨裝置100的頭部30時的概略側視圖,第4圖,是在「平行於第3圖的紙面,且通過心軸11之軸心」的平面中,第3圖之頭部30的概略剖面圖。 Next, the head 30 will be further described. FIG. 2 is a schematic perspective view showing the internal structure of the head 30 of the polishing apparatus 100 shown in FIG. 1, and FIG. 3 is a view of the head of the polishing apparatus 100 shown in FIG. 1 as viewed from the upper left of FIG. The schematic side view at the time of the part 30, FIG. 4 is a schematic cross-sectional view of the head part 30 of FIG. 3 in a plane “parallel to the paper surface of FIG. 3 and passing through the axis of the mandrel 11”.

如第2圖~第4圖所示,本實施形態的頭部30,是用來支承研磨體10的構件。該頭部30,隔著彈性機構32被支承,且具有「用來支承研磨體10之心軸11」的研磨體支承構件31。在研磨體支承構件31的內部,設有驅動心軸11旋轉的已知驅動機構(圖面中未顯示),而形成:以所期望的旋轉速度使研磨體10旋轉。如第4圖所示,研磨體支承構件31,呈現「在側面上具有凸緣部31a」的圓柱狀,在該凸緣部31a的上方設有:固定於臂22,包圍研磨體支承構件31的蓋35。如第2圖所示,蓋35的外形為八角柱狀。在蓋35,於上下方向形成有貫穿孔35a,在該貫穿孔35a內,研磨體支承構件31可朝上下 方向移動。 As shown in FIGS. 2 to 4, the head portion 30 of this embodiment is a member for supporting the polishing body 10. The head 30 is supported by an elastic mechanism 32 and includes a polishing body support member 31 "a mandrel 11 for supporting the polishing body 10". A known driving mechanism (not shown in the drawing) for driving the spindle 11 to rotate is provided inside the polishing body support member 31, and the polishing body 10 is rotated at a desired rotation speed. As shown in FIG. 4, the abrasive body supporting member 31 has a cylindrical shape “having a flange portion 31 a on the side surface”, and is provided above the flange portion 31 a: fixed to the arm 22 and surrounding the abrasive body supporting member 31的 盖 35. The cover 35. As shown in FIG. 2, the outer shape of the cover 35 is an octagonal column. A through-hole 35a is formed in the cover 35 in the up-down direction, and the polishing-body supporting member 31 can be moved upward and downward in the through-hole 35a. Move in the direction.

此外,如第2圖所示,本實施形態的彈性機構32是由以下所構成:1個加壓彈簧32a,與研磨體支承構件31一起朝下方對研磨體10加壓;2個平衡用彈簧32b、32c,用來支承研磨體支承構件31本身的重量。加壓彈簧32a被設在研磨體支承構件31的上端,而形成:沿著研磨體10之心軸11的軸心產生彈力。此外,平衡用彈簧32b、32c,在加壓彈簧32a的Y軸方向兩側,與該加壓彈簧32a並列地設在蓋35的上表面。在本實施形態中,加壓彈簧32a的上端連結於支承體33,而形成透過該加壓彈簧32a,測量施加於研磨體10的荷重。 In addition, as shown in FIG. 2, the elastic mechanism 32 of the present embodiment is constituted by: a compression spring 32 a that presses the polishing body 10 downward together with the polishing body support member 31; and two balance springs 32b and 32c are used to support the weight of the abrasive body support member 31 itself. The compression spring 32 a is provided on the upper end of the polishing body support member 31 to form an elastic force along the axis of the spindle 11 of the polishing body 10. The balance springs 32b and 32c are provided on the upper surface of the cover 35 in parallel to the pressure spring 32a on both sides in the Y-axis direction of the pressure spring 32a. In this embodiment, the upper end of the compression spring 32 a is connected to the support body 33 so as to pass through the compression spring 32 a and measure the load applied to the polishing body 10.

除此之外,研磨裝置100具備線性標度尺34,該線性標度尺34作為用來測量研磨體10相對於頭部30之垂直方向的座標(第2圖中的W座標)的位置感測器。如第2圖所示,線性標度尺34具有:透過被固定於研磨體支承構件31上端的固定體34a、與透過支承構件36被固定於蓋35上方的可動體34b。該線性標度尺34,測量研磨體支承構件31對蓋35的相對位置。然後形成:依據該測量值,控制裝置50對「研磨體10相對於頭部30的位置(W座標)」進行評價。 In addition, the polishing apparatus 100 is provided with a linear scale 34 which is used to measure the positional sense of the coordinate (the W coordinate in the second figure) of the abrasive body 10 with respect to the vertical direction of the head 30. Tester. As shown in FIG. 2, the linear scale 34 includes a fixed body 34 a that is fixed to the upper end of the polishing body support member 31 and a movable body 34 b that is fixed to the cover 35 above the transparent support member 36. This linear scale 34 measures the relative position of the abrasive body support member 31 to the cover 35. Then, based on the measured value, the control device 50 evaluates the "position (W coordinate) of the abrasive body 10 with respect to the head portion 30".

第5圖,為連接於第1圖所示之研磨裝置100的控制裝置50的概略塊狀圖。如第5圖所示,本實施形態的控制裝置50具有:偵測部51,用來偵測「研磨體10之心軸11的軸心」與「工作台60之旋轉的中心」之間的相 對位置關係;記憶部52,用來記憶從位置控制朝荷重控制切換時,研磨體支承構件31的Z座標;判定部53,用來判定研磨體支承構件31是否已到達前述Z座標;壓力評價部54,依據由偵測部51所偵測之「研磨體10之心軸11的軸心」與「工作台60之旋轉的中心」之間的相對位置關係,來評價研磨墊12與晶圓Wa之間的接觸面積,並依據該接觸面積與線性標度尺34的測量值,評價施加於該晶圓Wa的壓力是否適當。 Fig. 5 is a schematic block diagram of a control device 50 connected to the polishing device 100 shown in Fig. 1. As shown in FIG. 5, the control device 50 according to this embodiment includes a detecting unit 51 for detecting the distance between the “axis of the spindle 11 of the grinding body 10” and the “center of rotation of the table 60”. phase For the positional relationship; the memory unit 52 is used to memorize the Z coordinate of the grinding body support member 31 when switching from the position control to the load control; the determination unit 53 is used to determine whether the grinding body support member 31 has reached the aforementioned Z coordinate; pressure evaluation The unit 54 evaluates the polishing pad 12 and the wafer based on the relative positional relationship between the “axial center of the mandrel 11 of the polishing body 10” and the “center of rotation of the table 60” detected by the detecting unit 51. The contact area between Wa, and based on the measurement of the contact area and the linear scale 34, evaluate whether the pressure applied to the wafer Wa is appropriate.

接著,針對本實施形態的研磨裝置100的作用進行說明。 Next, an operation of the polishing apparatus 100 according to this embodiment will be described.

首先,在研磨加工之前,使工作台60沿著「刻劃於底座70上的2條平行溝」進行定位,進而使工作台60之旋轉的中心、與研磨體10之心軸11的軸心在Y軸方向上形成一致。作為被研磨材的晶圓Wa,使研磨對象的面朝向上方而載置於該工作台60。接著,一旦研磨裝置100被使用者啟動,塔柱21將在基座23上移動,直到「工作台60之旋轉的中心」與「心軸11的軸心」在第1圖的X軸方向中形成一致。此時,為了使研磨體10的研磨墊12不會與工作台60的緣部形成干涉,在初期狀態中,頭部30退避至充分的高度。 First, before the grinding process, the table 60 is positioned along the "two parallel grooves scribed on the base 70", and then the center of rotation of the table 60 and the axis of the spindle 11 of the grinding body 10 It is aligned in the Y-axis direction. The wafer Wa as a material to be polished is placed on the table 60 with the surface to be polished facing upward. Then, once the grinding device 100 is activated by the user, the tower 21 will move on the base 23 until "the center of rotation of the table 60" and "the axis of the mandrel 11" are in the X-axis direction of Fig. 1 Be consistent. At this time, in order to prevent the polishing pad 12 of the polishing body 10 from interfering with the edge portion of the table 60, the head portion 30 is retracted to a sufficient height in the initial state.

然後,依據使用者的指示,研磨體10的心軸11及工作台60的驅動機構分別啟動,研磨體10及工作台60以所期望的速度旋轉。亦即,研磨墊12與晶圓Wa,分別以所期望的速度旋轉。在該狀態下,頭部30藉 由設在塔柱21的驅動機構,與臂22一起朝下方移動,使研磨墊12抵接於晶圓Wa。在本實施形態中,為了執行平順的研磨加工,在研磨墊12抵接於晶圓Wa之前,對晶圓Wa的研磨對象面供給研磨液。 Then, according to a user's instruction, the driving mechanism of the spindle 11 and the table 60 of the grinding body 10 are activated respectively, and the grinding body 10 and the table 60 are rotated at a desired speed. That is, the polishing pad 12 and the wafer Wa are each rotated at a desired speed. In this state, the head 30 borrows The driving mechanism provided on the column 21 moves downward together with the arm 22 so that the polishing pad 12 abuts on the wafer Wa. In this embodiment, in order to perform a smooth polishing process, a polishing liquid is supplied to the polishing target surface of the wafer Wa before the polishing pad 12 abuts on the wafer Wa.

在本實施形態的研磨裝置100中,頭部30在「研磨墊12抵接於晶圓Wa」之前的移動,是依據位置控制所控制,亦即,是依據頭部30的位置(Z座標)的控制。接著,在研磨墊12抵接於晶圓Wa,且達成研磨時的目標荷重時,依據線性標度尺34所偵測之「研磨體10相對於頭部30的位置(W座標)」,切換成荷重控制。在本實施形態的荷重控制中,為了使施加於晶圓Wa與研磨墊12間之接觸面的壓力(面壓)形成一定,是斟酌彈性機構32的彈簧常數,來控制研磨體支承構件31的位置(W座標)。 In the polishing apparatus 100 according to this embodiment, the movement of the head 30 before the "polishing pad 12 abuts on the wafer Wa" is controlled based on position control, that is, based on the position (Z coordinate) of the head 30 control. Next, when the polishing pad 12 abuts on the wafer Wa and reaches the target load during polishing, it is switched according to the "position (W coordinate) of the polishing body 10 relative to the head 30" detected by the linear scale 34. Load control. In the load control of this embodiment, in order to make the pressure (surface pressure) applied to the contact surface between the wafer Wa and the polishing pad 12 constant, the spring constant of the elastic mechanism 32 is considered to control the polishing body support member 31. Location (W coordinate).

從以上的說明可清楚得知,本實施形態的荷重控制,並非藉由「直接地測量施加於研磨體10的荷重」的方式執行,而是依據由線性標度尺34所測量之「研磨體10相對於頭部30的位置(W座標)」所執行。具體地說,是依據該W座標與彈性機構32的彈簧常數,評價施加於研磨體10的荷重,為了使該荷重成為預定的值,而控制頭部30的位置(Z座標)。 It is clear from the above description that the load control in this embodiment is not performed by "directly measuring the load applied to the grinding body 10", but based on the "grinding body" measured by the linear scale 34 10 position (W coordinate) with respect to the head 30 ". Specifically, the load applied to the polishing body 10 is evaluated based on the W-coordinate and the spring constant of the elastic mechanism 32, and the position (Z-coordinate) of the head 30 is controlled so that the load becomes a predetermined value.

一旦荷重控制開始,壓力評價部54,即時(real time)監看研磨體支承構件31的W座標。研磨墊12,是從晶圓Wa的上方逐漸地靠近該晶圓Wa,同時從 晶圓Wa的徑向外側朝向徑向內側移動。然後,研磨墊12的一部分抵接於晶圓Wa,而開始該晶圓Wa的研磨。研磨墊12,逐漸地朝晶圓Wa的徑向內側移動。伴隨於此,研磨墊12的研磨面與晶圓Wa之間的接觸面積逐漸地增大,最終該研磨面整體接觸於晶圓Wa,接觸面積形成一定。在本實施形態中,為了使施加於研磨墊12與晶圓Wa間之接觸面的壓力(面壓)形成一定,而控制頭部30的位置(Z座標),因此施加於研磨體10的荷重,將於逐漸地增大後形成一定。 Once the load control is started, the pressure evaluation unit 54 monitors the W coordinate of the polishing body support member 31 in real time. The polishing pad 12 gradually approaches the wafer Wa from above the wafer Wa, and The radially outer side of the wafer Wa moves toward the radially inner side. Then, a part of the polishing pad 12 abuts on the wafer Wa, and polishing of the wafer Wa is started. The polishing pad 12 is gradually moved radially inward of the wafer Wa. Along with this, the contact area between the polishing surface of the polishing pad 12 and the wafer Wa gradually increases, and finally the entire polishing surface contacts the wafer Wa, and the contact area is formed constant. In this embodiment, in order to make the pressure (surface pressure) applied to the contact surface between the polishing pad 12 and the wafer Wa constant, and the position (Z coordinate) of the head 30 is controlled, the load applied to the polishing body 10 , Will gradually increase after a certain amount.

在伴隨著晶圓Wa的研磨加工,該晶圓Wa的厚度減少,且施加於研磨體10的荷重減少的場合中,頭部30藉由設在塔柱21的驅動機構24,與臂22一起朝下方移動。藉由該移動,研磨體10更用力地抵接於晶圓Wa,因此施加於研磨體10的荷重增大,且加壓彈簧32a受到壓縮。接著,倘若由線性標度尺34偵測出「研磨裝置100內所預先登錄之研磨體支承構件31的W座標」已經恢復,便停止移動。 In the case where the thickness of the wafer Wa is reduced and the load applied to the polishing body 10 is reduced with the polishing process of the wafer Wa, the head 30 is coupled with the arm 22 by the drive mechanism 24 provided on the tower 21 Move down. By this movement, the polishing body 10 abuts more strongly on the wafer Wa, so the load applied to the polishing body 10 increases, and the compression spring 32a is compressed. Then, if it is detected by the linear scale 34 that "the W-coordinate of the grinding body support member 31 registered in the grinding apparatus 100 in advance" has been restored, the movement is stopped.

在研磨晶圓Wa時,藉由使塔柱21在基座23上移動,使研磨體10沿著X座標方向從晶圓Wa其中一側的周緣部直線狀地移動至另一側的周緣部。在該研磨的過程中,一旦研磨體10通過「在晶圓Wa的表面存有微小的突起和異物的場所」,研磨體10將急遽地朝上方移動(被頂起)。 When the wafer Wa is polished, the column 21 is moved on the pedestal 23 to move the polishing body 10 linearly from the peripheral edge portion on one side of the wafer Wa to the peripheral edge portion on the other side in the X coordinate direction. . In the process of polishing, once the polishing body 10 passes through the “location where there are minute protrusions and foreign objects on the surface of the wafer Wa”, the polishing body 10 will move upward (lifted up) sharply.

然而,由於在本實施形態中,是利用線性標度尺34 間接地測量荷重,因此可測量的荷重範圍,譬如較藉由測力計直接測量的場合更廣。 However, in this embodiment, the linear scale 34 is used. The load is measured indirectly, so the range of load that can be measured, for example, is wider than when it is directly measured by a dynamometer.

然後,一旦達成所期望的研磨加工,便停止研磨液的供給,同時藉由驅動機構24,使頭部30與臂22一起朝上方移動。然後,依據使用者的指示,停止研磨體10及工作台60的旋轉,將晶圓Wa從工作台60卸下。此時,可視需要,使塔柱21在基座23上朝第1圖之X座標的負值方向移動,使頭部30形成退避。 Then, once the desired polishing process is achieved, the supply of the polishing liquid is stopped, and the head 30 and the arm 22 are moved upward together by the driving mechanism 24. Then, in accordance with an instruction from the user, the rotation of the polishing body 10 and the table 60 is stopped, and the wafer Wa is unloaded from the table 60. At this time, if necessary, the tower column 21 is moved on the base 23 in the negative direction of the X coordinate in FIG. 1 to make the head 30 retreat.

根據如以上所述的本實施形態,由於可不透過測力計等來測量施加於研磨體10的荷重,故可提供一種:能擴大該荷重的偵測範圍,即使研磨體10通過「存在有微小的突起和異物的場所」,也能維持高精確度的研磨加工的研磨裝置100。 According to this embodiment as described above, since the load applied to the abrasive body 10 can be measured without passing through a dynamometer or the like, it is possible to provide a method that can expand the detection range of the load, even if the abrasive body 10 passes "there is a small amount of "Positions of protrusions and foreign objects" can also maintain the polishing device 100 with a high precision polishing process.

在本實施形態中,由於採用線性標度尺34作為位置感測器,因此能正確地測量研磨體10對頭部30的相對位置。 In this embodiment, since the linear scale 34 is used as the position sensor, the relative position of the polishing body 10 to the head 30 can be accurately measured.

雖然在本實施形態中,研磨體10透過心軸11而可旋轉地由研磨體支承構件31所支承,但該研磨體10不一定需要被支承成可旋轉。 Although the polishing body 10 is rotatably supported by the polishing body support member 31 through the mandrel 11 in this embodiment, the polishing body 10 does not necessarily need to be rotatably supported.

接著,由於在本實施形態中,當達成研磨時的目標荷重時,從位置控制切換成荷重控制,但亦可在達成研磨時的目標荷重之前,切換成荷重控制。在該場合中,可避免起因於彈性機構32的回復力而產生之「對目標荷重的荷重過衝」。 Next, in this embodiment, when the target load during polishing is achieved, the position control is switched to the load control, but it may be switched to the load control before the target load during polishing is achieved. In this case, it is possible to avoid "overshoot of the target load" caused by the restoring force of the elastic mechanism 32.

Claims (4)

一種研磨裝置,其特徵為:具備:保持部,用來保持被研磨材;和研磨體,用來研磨被前述保持部所保持的被研磨材;和頭部,隔著彈性機構支承前述研磨體;和驅動機構,促使前述頭部,相對於前述被研磨材,朝向與該被研磨材之間的分離距離產生變化的方向移動;及控制部,被連接於前述驅動機構,用來控制前述驅動機構,前述頭部具有:用來支承前述研磨體的研磨體支承構件,前述彈性機構具有:將前述研磨體支承構件朝向前述被研磨材加壓的加壓彈簧;及與前述加壓彈簧並列配置,用來支承前述研磨體支承構件本身之重量的平衡用彈簧。A polishing device comprising: a holding portion for holding a material to be polished; and a polishing body for polishing the material to be polished held by the holding portion; and a head portion for supporting the polishing body via an elastic mechanism. And a driving mechanism for urging the head to move in a direction in which a separation distance from the material to be polished is changed relative to the material to be ground; and a control unit connected to the driving mechanism for controlling the driving A mechanism in which the head includes a polishing body support member for supporting the polishing body, and the elastic mechanism includes a pressure spring that presses the polishing body support member toward the material to be polished, and is arranged in parallel with the pressure spring A balance spring for supporting the weight of the abrasive body supporting member itself. 如請求項1所記載的研磨裝置,其中前述研磨裝置具備:連接於前述控制部,用來測量前述研磨體對前述頭部之位置的位置感測器。The polishing device according to claim 1, wherein the polishing device includes a position sensor connected to the control unit and configured to measure a position of the polishing body with respect to the head. 如請求項2所記載的研磨裝置,其中前述位置感測器為線性標度尺。The polishing device according to claim 2, wherein the position sensor is a linear scale. 如請求項2所記載的研磨裝置,其中前述控制部,依據前述位置感測器的測量值與前述彈性機構的彈簧常數,計算被施加於前述研磨體的荷重,而控制該荷重。The polishing device according to claim 2, wherein the control unit calculates a load to be applied to the polishing body based on a measurement value of the position sensor and a spring constant of the elastic mechanism, and controls the load.
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