TWI621655B - White curable composition for optical semiconductor device, white ingot for optical semiconductor device, molded body for optical semiconductor device, and optical semiconductor device - Google Patents

Abstract

The present invention provides a white curable composition for an optical semiconductor device which can obtain a molded article which is less likely to be defective and has excellent uniformity, and which can obtain a molded article having less appearance defects.

The white curable composition for an optical semiconductor device of the present invention contains an epoxy compound, an acid anhydride curing agent, a white pigment, a filler other than a white pigment, and a curing accelerator, and does not contain hexahydrophthalic anhydride and methylhexa. Hydrogen phthalic anhydride is used as the acid anhydride curing agent, and the epoxy compound contains triglycidyl isocyanurate, and the white semiconductor composition of the optical semiconductor device of the present invention is molded by a tableting pressure of 3 t. The cylindrical elastic ingot having a diameter of 13 mm and a height of 30 mm has a compressive elastic modulus of 100 MPa or more and 2000 MPa or less, and the cylindrical ingot has a compressive strength of 300 N or more.

Description

White curable composition for optical semiconductor device, white ingot for optical semiconductor device, molded body for optical semiconductor device, and optical semiconductor device

The present invention relates to a white curable composition for an optical semiconductor device for forming a white ingot for an optical semiconductor device. Moreover, the present invention relates to a white ingot for an optical semiconductor device for obtaining a molded body having a frame portion disposed on the side of the optical semiconductor device in the optical semiconductor device. Moreover, the present invention relates to a molded article for an optical semiconductor device and an optical semiconductor device using the white curable composition for an optical semiconductor device or the white ingot for the optical semiconductor device.

An optical semiconductor device such as a light emitting diode (LED) device has low power consumption and long life. Moreover, the optical semiconductor device can also be used in a severe environment. Therefore, the optical semiconductor device is used in a wide range of applications such as backlights for mobile phones, backlights for liquid crystal televisions, lamps for automobiles, lighting fixtures, and billboards.

When an optical semiconductor element (for example, an LED) as a light-emitting element used in an optical semiconductor device is in direct contact with the atmosphere, the light-emitting characteristics of the optical semiconductor element are drastically lowered by moisture in the atmosphere or floating dirt. Therefore, the above optical semiconductor element is usually sealed by a sealing agent for an optical semiconductor device. Moreover, in order to fill the sealant, a molded body having a frame portion is placed on a lead frame on which the optical semiconductor element is mounted. The sealant is filled inside the molded body having the frame portion. The shaped body is sometimes referred to as a reflector, an outer casing or a casing.

As an example of a molding material for obtaining the above-mentioned molded body, the following patents In the first aspect, there is disclosed a molding material comprising (A) an epoxy resin, (B) a curing agent, and (C) a white pigment, and (B) a curing agent containing an organic acid anhydride having a melting point of 100 ° C or higher. Patent Document 1 discloses that (B) the curing agent contains an organic acid anhydride having a melting point of 100 ° C or higher, whereby the molding material has rigidity to a degree that can be pulverized at around room temperature (0° C. to 30° C.), and can be sufficiently reduced in processing. Attachment of the device or forming device.

Patent Document 2 listed below discloses a molding material obtained by the following method: (A) contains three The solid epoxy obtained by melt-mixing the epoxy resin of the derivative epoxy resin, (B) an acid anhydride, and (C) an antioxidant, and pulverizing the solid matter.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-219634

[Patent Document 2] WO2007/015426A1

Patent Documents 1 and 2 describe forming a lozenge using the above-described molding material.

However, in the case of using the former molding material described in Patent Documents 1 and 2, the uniformity of the ingot is low, and the ingot may be defective. Further, when a molded article is produced by using a spindle, there is a problem that the appearance of the molded article is liable to be defective. In particular, in Patent Document 1, there is a problem that the ingot is likely to be defective. In Patent Document 2, there is a problem in that the uniformity of the ingot is low and the appearance of the molded body is liable to be defective.

An object of the present invention is to provide a white curable composition for an optical semiconductor device which can obtain a molded article which is less likely to be defective and has excellent uniformity, and which can obtain a molded article having less appearance defects. Further, an object of the present invention is to provide a white ingot for an optical semiconductor device which is less likely to be defective and which is excellent in uniformity and which can reduce appearance defects when a molded article is obtained.

Moreover, an object of the present invention is to provide a molded article for an optical semiconductor device and an optical semiconductor device using the white curable composition for an optical semiconductor device or the white ingot for the optical semiconductor device.

According to a broad aspect of the present invention, there is provided a white curable composition for an optical semiconductor device which is used for forming a white ingot for a white optical semiconductor device and which is white, and a white ingot for the above optical semiconductor device The molded article having a frame portion which is disposed on the side of the optical semiconductor device in the optical semiconductor device, and the white curable composition for the optical semiconductor device contains an epoxy compound, an acid anhydride curing agent, a white pigment, or a white pigment. The filler and the hardening accelerator do not contain both hexahydrophthalic anhydride and methylhexahydrophthalic anhydride as the acid anhydride curing agent, and the epoxy compound contains triglycidyl isocyanurate. The cylindrical elastic ingot having a diameter of 13 mm and a height of 30 mm obtained by molding the optical semiconductor device with a white curable composition by a tableting pressure of 3 t has a compressive elastic modulus of 100 MPa or more and 2000 MPa or less, and the cylinder The compressive strength of the shaped ingot is 300 N or more.

Moreover, according to a broad aspect of the present invention, a white ingot for an optical semiconductor device for obtaining a molded body having a frame portion disposed on the side of an optical semiconductor device in an optical semiconductor device is used. The white light semiconductor device is formed of a white curable composition and is white, and the white curable composition for an optical semiconductor device contains an epoxy compound, an acid anhydride curing agent, a white pigment, a filler other than a white pigment, and a curing accelerator, wherein the white curable composition for an optical semiconductor device does not contain both hexahydrophthalic anhydride and methylhexahydrophthalic anhydride as the acid anhydride curing agent, and the epoxy compound contains isocyanuric acid The triglycidyl ester has a compressive elastic modulus of 100 MPa or more and 2000 MPa or less and a compressive strength of 300 N or more when the compressive elastic modulus and the compressive strength are measured using a cylindrical ingot having a diameter of 13 mm and a height of 30 mm.

The white ingot for the above optical semiconductor device is preferably used for transfer molding The above shaped body is obtained.

In a specific aspect of the invention, when the white curable composition for an optical semiconductor device is obtained, the mixture is heated and kneaded at 50 ° C to 90 ° C for 10 minutes to 60 minutes, and then at 30 ° C or less and less than 50 ° C. Aging for 24 hours to 240 hours.

It is preferable that the glass transition point obtained by the differential scanning calorimetry of the white curable composition for an optical semiconductor device is 0° C. or higher and 40° C. or lower.

The white curable composition for an optical semiconductor device preferably contains an acid anhydride curing agent having a melting point of 50 ° C or less as the acid anhydride curing agent, and an acid anhydride hardening having a melting point of 50 ° C or less in all 100% by weight of the acid anhydride curing agent. The content of the agent is 20% by weight or more.

It is preferred that the epoxy compound has an epoxy equivalent of 300 or less.

Preferably, the white pigment is titanium oxide, zinc oxide or zirconium oxide, and the filler contains cerium oxide.

In a specific aspect of the present invention, the white ingot for the optical semiconductor device is used for obtaining a molded body disposed on a lead frame on which an optical semiconductor element is mounted in an optical semiconductor device.

In a specific aspect of the present invention, the white ingot for the optical semiconductor device is used to obtain the pre-division molded body obtained by obtaining a plurality of formed bodies, and then the pre-divided molded body is divided to obtain each molded body. .

According to a broad aspect of the present invention, there is provided a molded article for an optical semiconductor device which is a molded body having a frame portion disposed on the side of the optical semiconductor device in the optical semiconductor device, and is used by using the optical semiconductor device. After the white curable composition was formed into a white ingot for an optical semiconductor device, the optical semiconductor device was molded into a white ingot and cured.

According to a broad aspect of the present invention, an optical semiconductor device including: a lead frame, an optical semiconductor element carried on the lead frame, and the lead is disposed a molded body having a frame portion disposed on the side of the optical semiconductor element, and the molded system is formed by forming a white ingot for an optical semiconductor device using the white curable composition for an optical semiconductor device. The optical semiconductor device is obtained by molding and hardening a white ingot.

The white curable composition for an optical semiconductor device of the present invention contains an epoxy compound, an acid anhydride curing agent, a white pigment, a filler other than a white pigment, and a curing accelerator, and does not contain hexahydrophthalic anhydride and methylhexa. The hydrogen phthalic anhydride is used as the acid anhydride curing agent, and the epoxy compound contains triglycidyl isocyanurate, and the optical semiconductor device is molded with a white curable composition by a tableting pressure of 3 t. The cylindrical elastic ingot having a diameter of 13 mm and a height of 30 mm has a compressive elastic modulus of 100 MPa or more and 2000 MPa or less, and the cylindrical ingot has a compressive strength of 300 N or more, so that it is less likely to be defective and excellent in uniformity. The ingot is used to obtain a molded body having less appearance.

The white ingot for the optical semiconductor device of the present invention is formed using a white curable composition for an optical semiconductor device, and the white curable composition for an optical semiconductor device contains an epoxy compound, an acid anhydride curing agent, a white pigment, or a white pigment. a filler and a curing accelerator, and the white curable composition for an optical semiconductor device does not contain both hexahydrophthalic anhydride and methylhexahydrophthalic anhydride as the acid anhydride curing agent, and the epoxy resin The compound contains triglycidyl isocyanurate. When the compressive elastic modulus and compressive strength are measured using a cylindrical ingot having a diameter of 13 mm and a height of 30 mm, the compressive elastic modulus of the ingot is 100 MPa or more and 2000 MPa or less. Further, since the cylindrical ingot has a compressive strength of 300 N or more, it is less likely to be defective and excellent in uniformity, and further, when the molded body is obtained, appearance defects can be reduced.

1‧‧‧Optical semiconductor device

2‧‧‧ lead frame

2A‧‧‧Separate lead frame

3‧‧‧Optical semiconductor components

4‧‧‧First molded body

4A‧‧‧First molded body before splitting

4a‧‧‧ inside

5‧‧‧2nd molded body

5A‧‧‧Second shaped body before splitting

6‧‧‧Mack crystal

7‧‧‧bonding line

8‧‧‧Sealant

11‧‧‧Division of parts for optical semiconductor devices

12‧‧‧Division of pre-optical semiconductor devices

21‧‧‧Optical semiconductor devices

22‧‧‧Mack crystal

23‧‧‧bonding line

31‧‧‧Optical semiconductor device

32‧‧‧ Shaped body

32a‧‧‧ Frame Department

32b‧‧‧Filling Department

1(a) and (b) are schematic views showing the use of a light half using an embodiment of the present invention A cross-sectional view and a perspective view of an example of an optical semiconductor device of a molded body of a white curable composition for a conductor device.

Fig. 2 is a cross-sectional view schematically showing a modification of the optical semiconductor device shown in Fig. 1.

Fig. 3 is a cross-sectional view schematically showing a modification of the optical semiconductor device shown in Fig. 2.

FIG. 4 is a cross-sectional view showing an example of a component for pre-separation optical semiconductor device including a pre-divided molded body in which a plurality of molded bodies connected by a white curable composition for an optical semiconductor device according to an embodiment of the present invention are used. Figure.

FIG. 5 is a cross-sectional view schematically showing an example of a pre-divided optical semiconductor device including a pre-divided molded body in which a plurality of molded bodies of a white curable composition for an optical semiconductor device according to an embodiment of the present invention are connected.

Hereinafter, the present invention will be described in detail.

(White curable composition for optical semiconductor device and white ingot for optical semiconductor device)

The white curable composition for an optical semiconductor device of the present invention is used to form a white ingot for a white optical semiconductor device. The white curable composition for an optical semiconductor device of the present invention is white. The white ingot for the optical semiconductor device is used to obtain a molded body having a frame portion disposed on the side of the optical semiconductor device in the optical semiconductor device.

The white curable composition for an optical semiconductor device of the present invention contains an epoxy compound, an acid anhydride curing agent, a white pigment, a filler other than a white pigment, and a curing accelerator. The white curable composition for an optical semiconductor device of the present invention contains both hexahydrophthalic anhydride and methylhexahydrophthalic anhydride as the acid anhydride curing agent. The white curable composition for an optical semiconductor device of the present invention is a composition excluding a composition containing both hexahydrophthalic anhydride and methylhexahydrophthalic anhydride as an acid anhydride curing agent. About this issue A white curable composition for a bright-light semiconductor device is a composition containing both hexahydrophthalic anhydride and methylhexahydrophthalic anhydride as an acid anhydride curing agent. The above epoxy compound contains triglycidyl isocyanurate. The cylindrical elastic ingot having a diameter of 13 mm and a height of 30 mm obtained by molding the optical semiconductor device of the present invention with a white curable composition at a tableting pressure of 3 t has a compressive elastic modulus of 100 MPa or more and 2000 MPa or less. The cylindrical ingot has a compressive strength of 300 N or more.

According to the above configuration of the white curable composition for an optical semiconductor device of the present invention, when a white ingot for an optical semiconductor device is formed using the curable composition, an ingot which is less likely to be broken and has excellent uniformity can be obtained. Things. Further, by using the white ingot for the obtained optical semiconductor device, a molded article having less appearance defects can be obtained. Further, the epoxy compound contains triglycidyl isocyanurate, and the coloration of the ingot and the molded body can also be suppressed. In the present invention, in the case of the ingot which is suppressed in coloring, it is possible to prevent the occurrence of defects and to improve the uniformity, and it is possible to reduce the appearance defects in the molded article in which the coloring is suppressed.

In addition, the white ingot for the optical semiconductor device of the present invention is used to obtain a molded body having a frame portion disposed on the side of the optical semiconductor device in the optical semiconductor device. The white ingot for the optical semiconductor device of the present invention is formed using a white curable composition for a white optical semiconductor device. The white ingot for the optical semiconductor device of the present invention is white.

In the white ingot for an optical semiconductor device of the present invention, the white curable composition for an optical semiconductor device contains an epoxy compound, an acid anhydride curing agent, a white pigment, a filler other than a white pigment, and a curing accelerator. In the white ingot for an optical semiconductor device of the present invention, the white curable composition for an optical semiconductor device does not contain both hexahydrophthalic anhydride and methylhexahydrophthalic anhydride as the acid anhydride. hardener. The white curable composition for an optical semiconductor device is a composition excluding a composition containing both hexahydrophthalic anhydride and methylhexahydrophthalic anhydride as an acid anhydride curing agent. The white curable composition for an optical semiconductor device described above contains hexahydrophthalic anhydride. Except for the combination of methyl hexahydrophthalic anhydride as an acid anhydride hardener. The above epoxy compound contains triglycidyl isocyanurate. In the case of a white ingot for an optical semiconductor device of the present invention, when a compressive elastic modulus and a compressive strength are measured using a cylindrical ingot having a diameter of 13 mm and a height of 30 mm, the compressive elastic modulus is 100 MPa or more and 2000 MPa or less. And the compressive strength is 300N or more.

According to the above configuration of the white ingot for the optical semiconductor device of the present invention, the defects of the ingot can be prevented from occurring and the uniformity can be improved. Further, by using the white ingot for the obtained optical semiconductor device, a molded article having less appearance defects can be obtained. When the epoxy compound contains triglycidyl isocyanurate, the coloration of the ingot and the molded body can also be suppressed. In the present invention, in the case of the ingot which is suppressed in coloring, it is possible to prevent the occurrence of defects and to improve the uniformity, and it is possible to reduce the appearance defects in the molded article in which the coloring is suppressed.

Further, in the past, when forming a molded body, a spindle was often used. If the strength of the ingot is low, for example, when the plunger portion of the transfer molding machine is carried in, the ingot may be broken or broken. As a result, there is a problem that the molded body is liable to cause an appearance defect.

Further, the ingot may be obtained by a kneading step of a raw material, a cooling step of the kneaded material, a pulverizing step after cooling, and a tableting step of forming the pulverized material into a lozenge. In the pulverization step and the above-described tableting step, if the substance before or after the pulverization is liquid or semi-solid, the substance adheres to the pulverizing apparatus and the tableting machine to cause a problem. Therefore, it is preferable that the above-mentioned materials before and after the pulverization have a high rigidity to the extent that they can be pulverized and can be tableted. The higher the rigidity of the above substances, the less likely the ingot is to be broken.

In view of such a problem, in the present invention, the defects of the ingot can be prevented from being generated and the uniformity can be improved, and the appearance defect of the molded body can be reduced.

Further, the white ingot for the optical semiconductor device of the present invention may have a cylindrical shape of 13 mm in diameter and 30 mm in height, or may be a columnar shape having a diameter of 13 mm and a height of 30 mm. The white ingot for the optical semiconductor device of the present invention is not 13 mm in diameter and 30 mm in height. In the case of a columnar shape, a cylindrical ingot having a diameter of 13 mm and a height of 30 mm which is different from the white ingot for the optical semiconductor device of the present invention is prepared, and the compressive elastic modulus and the compressive strength are measured.

In addition, in order to obtain a plurality of optical semiconductor devices, the molded body is placed on the pre-divided lead frame divided into a plurality of lead frames, and then the pre-divided lead frames are divided to obtain a plurality of optical semiconductor devices. Further, in order to obtain a plurality of optical semiconductor devices, a pre-segment molded body which is divided into a plurality of molded bodies after being disposed on the lead frame is divided, and the pre-divided molded body is divided to obtain a plurality of optical semiconductor devices.

By using the white curable composition for an optical semiconductor device of the present invention and the white ingot for the optical semiconductor device of the present invention, it is possible to suppress the appearance defect of the molded body. Therefore, when the lead frame before splitting and the pre-divided molded body are divided, The peeling of the formed body from the lead frame can be effectively suppressed. Further, in the present invention, for example, after the white curable composition of the optical semiconductor device of the present invention is molded, and the LED package including the molded body to be molded is separated from the flow path portion, the molded body is less likely to be peeled off from the lead frame or the like.

Hereinafter, the details of each component contained in the white curable composition for an optical semiconductor device of the present invention will be described.

[epoxy compound (A)]

The white curable composition for an optical semiconductor device contains the epoxy compound (A) and can be cured by the imparting of heat. The above epoxy compound (A) has an epoxy group. By using the epoxy compound (A) as a thermosetting compound, the heat resistance and insulation reliability of the molded body become high. The epoxy compound (A) may be used alone or in combination of two or more.

Specific examples of the epoxy compound (A) include a bisphenol epoxy compound, a novolac epoxy compound, and a glycidyl ester epoxy compound obtained by reacting a polybasic acid compound with epichlorohydrin. A glycidylamine type epoxy compound obtained by reacting a polyamine compound with epichlorohydrin, a glycidyl ether type epoxy compound, an aliphatic epoxide a hydrogenated aromatic epoxy compound, an epoxy compound having an alicyclic skeleton, or a heterocyclic epoxy compound such as triglycidyl isocyanurate. Examples of the polybasic acid compound include phthalic acid and dimer acid. Examples of the polyamine compound include diaminodiphenylmethane and isocyanuric acid.

Examples of the bisphenol type epoxy compound include a bisphenol A type epoxy compound, a bisphenol F type epoxy compound, a bisphenol S type epoxy compound, and a diglycidyl ether such as an alkyl substituted bisphenol. Examples of the novolak-type epoxy compound include a phenol novolak type epoxy compound and an o-cresol novolak type epoxy compound. Examples of the heterocyclic epoxy compound include diglycidyl isocyanurate and triglycidyl isocyanurate.

The above epoxy compound (A) is preferably a colorless or nearly colorless color. Therefore, the epoxy compound (A) is preferably a bisphenol A epoxy compound, a bisphenol F epoxy compound, a bisphenol S epoxy compound, diglycidyl isocyanurate or triglycidyl isocyanurate. ester. The epoxy compound (A) contains triglycidyl isocyanurate in order to suppress the coloration of the ingot and the molded body.

The epoxy compound (A) preferably contains an epoxy compound having no aromatic skeleton, and preferably has no aromaticity, from the viewpoint of further suppressing deterioration in quality of the optical semiconductor device due to use in a severe environment. An epoxy compound of a family skeleton.

The epoxy compound (A) preferably has an epoxy equivalent of 50 or more, more preferably 100 or more, and is preferably 500 or less, more preferably 300 or less. The epoxy compound (A) preferably has an epoxy equivalent of 300 or less. When the epoxy equivalent is not less than the above lower limit and not more than the above upper limit, in particular, when the epoxy equivalent is 300 or less, the continuous moldability of the curable composition and the adhesion of the molded article to the object to be adhered are further improved.

The blending amount of the epoxy compound (A) is appropriately adjusted so as to be appropriately cured by the application of heat, and is not particularly limited. The content of the epoxy compound (A) is preferably 1% by weight or more, more preferably 3% by weight or more, even more preferably 5% by weight or more, based on 100% by weight of the white curable composition for an optical semiconductor device. Preferably 99% by weight More preferably, it is 95% by weight or less, further preferably 90% by weight or less, and still more preferably 80% by weight or less. The content of the triglycidyl isocyanurate in 100% by weight of the white curable composition for an optical semiconductor device is preferably 1% by weight or more, more preferably 3% by weight or more, still more preferably 5% by weight or more, and It is preferably 99% by weight or less, more preferably 95% by weight or less, further preferably 90% by weight or less, and still more preferably 80% by weight or less. When the content of the epoxy compound (A) and the content of the triglycidyl isocyanurate are at least the above lower limit, the curable composition is more effectively cured by heating. When the content of the epoxy compound (A) is at most the above upper limit, the heat resistance of the molded article is further improved.

[hardener (B)]

The white curable composition for an optical semiconductor device contains the above-mentioned curing agent (B), and can be efficiently cured by the application of heat. The white curable composition for an optical semiconductor device described above does not contain both hexahydrophthalic anhydride and methylhexahydrophthalic anhydride as the acid anhydride curing agent. The above curing agent (B) hardens the above epoxy compound (A). The above curing agent (B) is an acid anhydride curing agent. By using the acid anhydride curing agent, the adhesion between the member such as the sealant or the lead frame that is in contact with the molded body and the molded body is increased. Moreover, by using the above-described acid anhydride curing agent, the hardenability can be maintained high, and the molding unevenness of the molded body can be further suppressed. As the acid anhydride curing agent, a known acid anhydride curing agent which is used as a curing agent for the epoxy compound (A) can be used. The curing agent (B) may be used alone or in combination of two or more.

Further, for example, the melting point of hexahydrophthalic anhydride is -30 ° C, and the melting point of methyl hexahydrophthalic anhydride is 33 ° C, and the melting points thereof are greatly different. By not using these, the control of the hardening conditions becomes easy. Moreover, unevenness in hardening can be suppressed. Further, when two or more kinds of curing agents are used, the difference between the maximum value and the minimum value of the melting point of the curing agent is preferably 50 ° C or lower, more preferably 40 ° C or lower, and still more preferably 30 ° C or lower. Methylhexahydrophthalic anhydride is a compound obtained by introducing a methyl group into a 6-membered ring of hexahydrophthalic anhydride. Examples of the methylhexahydrophthalic anhydride include 4-methylhexahydrophthalic anhydride and the like.

As the acid anhydride curing agent, any of an acid anhydride having an aromatic skeleton and an acid anhydride having an alicyclic skeleton can be used.

Preferred examples of the acid anhydride curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic dianhydride, hexahydrophthalic anhydride, and tetrahydrophthalic anhydride. Methylic acid anhydride, dying anhydride, glutaric anhydride, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, and the like.

The above acid anhydride hardener preferably does not have a double bond. Preferred examples of the acid anhydride curing agent having no double bond include hexahydrophthalic anhydride and methylhexahydrophthalic anhydride. The acid anhydride curing agent is preferably one of hexahydrophthalic anhydride and methylhexahydrophthalic anhydride.

The white curable composition for an optical semiconductor device preferably contains an acid anhydride curing agent having a melting point of 50 ° C or less as the acid anhydride curing agent, from the viewpoint of improving the kneading uniformity of the curable composition itself. In the 100% by weight of the acid anhydride curing agent contained in the white curable composition for an optical semiconductor device, the content of the acid anhydride curing agent having a melting point of 50 ° C or less is preferably 20% by weight or more and 100% by weight or less. The acid anhydride curing agent may be all an acid anhydride curing agent having a melting point of 50 ° C or lower. The content of the acid anhydride curing agent having a melting point of 50 ° C or less in 100% by weight of the acid anhydride curing agent may be 40% by weight or more, or may be 50% by weight or more.

The compounding ratio of the epoxy compound (A) and the above curing agent (B) is not particularly limited. The content of the curing agent (B) (an acid anhydride curing agent) is preferably 0.5 parts by weight or more, more preferably 1 part by weight or more, and still more preferably 2 parts by weight or more based on 100 parts by weight of the epoxy compound (A). More preferably, it is 3 parts by weight or more, and preferably 500 parts by weight or less, more preferably 300 parts by weight or less, further preferably 200 parts by weight or less, and particularly preferably 100 parts by weight or less.

Further, in the white curable composition for an optical semiconductor device, the equivalent ratio of the epoxy equivalent of the epoxy compound (A) to the hardener equivalent of the hardener (B) (anhydride hardener) as a whole (epoxy equivalent) : hardener equivalent) is preferably from 0.3:1 to 3:1, more preferably 1.3:1~2:1. When the above equivalent ratio (epoxy equivalent: curing agent equivalent) satisfies the above range, the heat resistance and weather resistance of the molded body are further improved.

(white pigment (C))

Since the white curable composition for an optical semiconductor device contains the white pigment (C), a molded body having a high light reflectance can be obtained. Moreover, by using the white pigment (C), a molded body having a high reflectance of light can be obtained as compared with the case of using only a filler other than the white pigment (C). The white pigment (C) may be used alone or in combination of two or more.

The white pigment (C) is not particularly limited. A previously known white pigment can be used as the above white pigment (C).

Examples of the white pigment (C) include alumina, titania, zinc oxide, zirconium oxide, cerium oxide, and magnesium oxide.

The white pigment (C) is preferably titanium oxide, zinc oxide or zirconium oxide from the viewpoint of further increasing the light reflectance of the molded body. In the case of using the preferred white pigment, one or two or more kinds of white pigments of titanium oxide, zinc oxide and zirconium oxide can be used. The white pigment (C) is preferably titanium oxide or zinc oxide, preferably titanium oxide, preferably zinc oxide. The above white pigment (C) may also be zirconia.

The titanium oxide is preferably rutile-type titanium oxide. By using rutile-type titanium oxide, the heat resistance of the molded body is further improved, and the quality is not easily lowered even when an optical semiconductor device is used in a severe environment.

The titanium oxide is preferably a rutile-type titanium oxide surface-treated with alumina. The content of the rutile-type titanium oxide surface-treated with alumina in 100% by weight of the white pigment (C) is preferably 10% by weight or more, more preferably 30% by weight or more, and 100% by weight or less. . The white pigment (C) may be all rutile-type titanium oxide surface-treated with alumina. The heat resistance of the molded body is further improved by using the above-described rutile-type titanium oxide surface-treated with alumina.

As the rutile-type titanium oxide which has been surface-treated with alumina, for example, "CR-58" manufactured by Ishihara Sangyo Co., Ltd. as rutile chlorinated titanium oxide, and as a refractory titanium oxide rutile "R-630" manufactured by an industrial company.

The above zinc oxide is preferably a surface treated zinc oxide. The zinc oxide is preferably surface-treated by a material containing cerium, aluminum or zirconia, from the viewpoint of further improving the processability of the molded body and the light reflectance of the molded body, and more preferably by The material containing bismuth is surface treated. The above material containing ruthenium is preferably a polyfluorene oxide compound.

The above zirconia is preferably a surface treated zirconia. The zirconia is preferably surface-treated by a material containing cerium, aluminum or zirconia, from the viewpoint of further improving the processability of the formed body and the light reflectance of the formed body, more preferably by The material containing bismuth is surface treated. The above material containing ruthenium is preferably a polyfluorene oxide compound.

The method of the above surface treatment is not particularly limited. As a method of surface treatment, a dry method, a wet method, a bulk blending method, and other well-known conventional surface treatment methods can be used.

The content of the white pigment (C) in the white curable composition for an optical semiconductor device is preferably 3% by weight or more, more preferably 5% by weight or more, still more preferably 7% by weight or more, and particularly preferably 100% by weight. It is 10% by weight or more, and preferably 95% by weight or less, more preferably 90% by weight or less, still more preferably 85% by weight or less. In 100% by weight of the white curable composition for an optical semiconductor device, the total content of titanium oxide, zinc oxide, and zirconium oxide is preferably 3% by weight or more, more preferably 5% by weight or more, and still more preferably 7% by weight or more. More preferably, it is 10% by weight or more, and is preferably 95% by weight or less, more preferably 90% by weight or less, still more preferably 85% by weight or less. When the content of the white pigment (C) and the total content of the titanium oxide, the zinc oxide, and the zirconia are each the lower limit or more and the upper limit or less, the reflectance of the light of the molded body is further improved, and the formability of the curable composition is improved. Further improve.

(filler (D))

The filler (D) is a filler other than the white pigment (C). The above filler (D) is different from the white pigment (C). The filler (D) may be used alone or in combination of two or more.

As the filler (D), any of an inorganic filler and an organic filler can be used. Specific examples of the filler (D) include cerium oxide, mica, cerium oxide, potassium titanate, barium titanate, barium titanate, calcium titanate, cerium oxide, aluminum borate, aluminum hydroxide, and oxidation. Magnesium, calcium carbonate, magnesium carbonate, aluminum carbonate, calcium citrate, aluminum citrate, magnesium citrate, calcium phosphate, calcium sulfate, barium sulfate, tantalum nitride, boron nitride, calcined clay, clay, talc, tantalum carbide, Crosslinked acrylic resin particles, polyfluorene oxide particles, and the like. The filler (D) is preferably an inorganic filler. The filler (D) is not a titanium oxide as a white pigment, and is not a zinc oxide as a white pigment, and is a white pigment zirconia.

The filler (D) preferably contains cerium oxide, more preferably cerium oxide, from the viewpoint of further improving the moldability of the curable composition and the adhesion between the molded article and the object to be adhered.

The filler (D) preferably has an average particle diameter of 0.1 μm or more, and preferably 100 μm or less. When the average particle diameter is at least the above lower limit, the formability of the curable composition is further improved. When the average particle diameter is at most the above upper limit, the appearance of the molded article is less likely to occur.

The average particle diameter of the above filler (D) is a particle diameter value when the cumulative value in the volume-based particle size distribution curve is 50%. The average particle diameter can be measured, for example, using a laser light particle size distribution meter. As a commercial item of this laser light-type particle size distribution meter, "LS13320" by Beckman Coulter company, etc. are mentioned.

In 100% by weight of the white curable composition for an optical semiconductor device, the content of the filler (D) and the content of the cerium oxide are each preferably 3% by weight or more, more preferably 5% by weight or more, and further preferably It is 10% by weight or more, more preferably 20% by weight or more, and is preferably 95% by weight or less, more preferably 90% by weight or less, still more preferably 85% by weight or less. If the content of the filler (D) and the content of the above-mentioned cerium oxide are the above lower limit When it is more than the above upper limit, the formability of the curable composition is further improved. When the content of the filler (D) and the content of the cerium oxide are at most the above upper limit, the reflectance of light of the molded body is further improved.

In 100% by weight of the white curable composition for an optical semiconductor device, the total content of the white pigment (C) and the filler (D) is preferably 20% by weight or more, more preferably 50% by weight or more, and further preferably It is 60% by weight or more, and preferably 95% by weight or less, more preferably 90% by weight or less, still more preferably 85% by weight or less. When the total content of the white pigment (C) and the filler (D) is at least the above lower limit and not more than the above upper limit, the moldability of the curable composition and the reflectance of the light of the molded article are further improved, and the curable composition is further improved. The liquidity is further moderated. In addition, when the total content of the white pigment (C) and the filler (D) is 50% by weight or more, the strength of the molded body is further improved, and the fluidity of the curable composition is further improved.

(hardening accelerator (E))

The white curable composition for an optical semiconductor device described above contains a curing accelerator (E). By using the above-described curing accelerator (E), the curability of the curable composition can be improved, and the heat resistance of the molded article can be improved. The hardening accelerator (E) may be used alone or in combination of two or more.

Examples of the curing accelerator (E) include a urea compound, an onium salt compound, an imidazole compound, a phosphorus compound, an amine compound, and an organometallic compound.

Examples of the urea compound include urea, an aliphatic urea compound, and an aromatic urea compound. Specific examples of the urea compound include urea, methyl urea, 1,1-dimethylurea, 1,3-dimethylurea, 1,1,3,3-tetramethylurea, and 1, 3-diphenylurea and tri-n-butylthiourea. Urea compounds other than these may also be used.

Examples of the onium salt compound include an ammonium salt, a phosphonium salt, and an onium salt compound.

Examples of the imidazole compound include 2-undecylimidazole, 2-heptadecylimidazole, 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, and 2-benzene. 4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1,2-dimethylimidazole, 1-cyanoethyl-2-methyl Imidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1- Cyanoethyl-2-undecyl imidazolium triester, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'- Methylimidazolyl-(1')]-ethyl-all three 2,4-Diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-all three 2,4-Diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-all three 2,4-Diamino-6-[2'-methylimidazolyl-(1')]-ethyl-all three Isocyanuric acid adduct, 2-phenylimidazolium isocyanurate adduct, 2-methylimidazoisocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl 4-methyl-5-dihydroxymethylimidazole and the like.

The above phosphorus compound contains phosphorus and is a phosphorus-containing compound. Examples of the phosphorus compound include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butylphosphonium o,o-diethyldithiophosphate, tetra-n-butylphosphonium tetrafluoroborate, and Tetra-n-butylphosphonium tetraphenylborate. Phosphorus compounds other than these may also be used.

The amine compound may, for example, be diethylamine, triethylamine, diethylidenetetraamine, triethylidenetetramine, 4,4-dimethylaminopyridine, diazabicycloalkane or diaza. Bicyclic olefin, quaternary ammonium salt, tri-ethylenediamine, and tris-2,4,6-dimethylaminomethylphenol. Salts of such compounds can also be used. There may be mentioned: phenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butyl fluorene o,o-diethyldithiophosphate, tetra-n-butylphosphonium tetrafluoroborate, tetra-n-butyl tetraphenylborate Basic.

Examples of the organometallic compound include an alkali metal compound and an alkaline earth metal compound. Specific examples of the organometallic compound include zinc naphthenate, cobalt naphthenate, tin octylate, cobalt octoate, cobalt(II) diacetate, and cobalt (III) triacetate.

The curing accelerator (E) is preferably a urea compound, a phosphonium salt compound or a phosphorus compound from the viewpoint of further improving the curability of the curable composition and further improving the heat resistance of the molded article. The above hardening accelerator (E) is preferably a urea compound, and is also preferably The phosphonium salt compound is also preferably a phosphorus compound.

The compounding ratio of the epoxy compound (A) and the hardening accelerator (E) is not particularly limited. The content of the curing accelerator (E) is preferably 0.01 parts by weight or more, more preferably 0.1 parts by weight or more, and still more preferably 100 parts by weight or less, more preferably 100 parts by weight of the epoxy compound (A). It is 10 parts by weight or less, and more preferably 5 parts by weight or less.

(release agent (F))

The white curable composition for an optical semiconductor device contains the above-mentioned release agent (F) or does not contain the above-mentioned release agent (F). In the above, the white curable composition for an optical semiconductor device may further contain the above-mentioned release agent (F) from the viewpoint of further improving the continuous moldability. The above-mentioned release agent (F) may be used alone or in combination of two or more.

The release agent (F) is not particularly limited. A previously known release agent can be used as the above-mentioned release agent (F). Examples of the release agent (F) include a fatty acid ester wax, an oxidized or non-oxidized polyolefin wax, a paraffin wax, a carnauba wax, and a polyoxyxide compound. Examples of the polyfluorene oxide compound include polydecane oxide oil and modified polyoxyxylene oil.

In 100% by weight of the white curable composition for an optical semiconductor device, the content of the release agent (F) is 0% by weight or less, preferably 0.05% by weight or more, and more preferably 0.1% by weight or more. It is preferably 5% by weight or less, more preferably 3% by weight or less. The white curable composition for an optical semiconductor device may not contain the above-mentioned release agent (F). When the content of the release agent (F) is at least the above lower limit, the continuous moldability is further improved. When the content of the release agent (F) is at most the above upper limit, the adhesion between the object to be bonded and the molded article is further improved.

In view of further improving the adhesion between the object to be bonded and the molded article, the white curable composition for an optical semiconductor device preferably contains the release agent (F) or the release agent (F). The content of the above-mentioned release agent (F) in 100% by weight of the white curable composition for an optical semiconductor device is 2% by weight or less.

(other ingredients)

The white curable composition for the optical semiconductor device may optionally contain a coupling agent, an antioxidant, a resin modifier, a colorant, a diluent, a surface treatment agent, a flame retardant, a viscosity modifier, a dispersant, and a dispersion aid. , surface modifiers, plasticizers, antibacterial agents, anti-fungal agents, leveling agents, stabilizers, anti-sagging agents or phosphors. The diluent may be a reactive diluent or a non-reactive diluent.

The coupling agent is not particularly limited, and examples thereof include a decane coupling agent and a titanate coupling agent.

The antioxidant is not particularly limited, and examples thereof include a phenol antioxidant, a phosphorus antioxidant, and an amine antioxidant.

The coloring agent is not particularly limited, and examples thereof include a phthalocyanine, an azo compound, a disazo compound, a quinacridone, an anthracene, a yellow ketone, an anthracene, an anthracene, and a Various organic pigments such as condensed azo compounds, azoimine compounds, infrared absorbing materials, and ultraviolet absorbers, and lead sulfate, chrome yellow, zinc yellow, chrome red, red dan, cobalt violet, iron blue, ultramarine blue, carbon black Inorganic pigments such as chrome green, chromium oxide and cobalt green.

(Other details of the white curable composition for an optical semiconductor device, other details of a white ingot for an optical semiconductor device, and a molded article for an optical semiconductor device)

The glass transition point determined by the differential scanning calorimetry of the white curable composition for an optical semiconductor device is preferably -20 ° C or higher, more preferably 0 ° C or higher, and is preferably 50 ° C or lower, more preferably Below 40 °C. When the glass transition point is at least the above lower limit, the strength of the ingot is further increased, and the ingot is less likely to be defective. When the glass transition point is at most the above upper limit, molding failure is less likely to occur, and in particular, molding failure during transfer molding is less likely to occur.

In the above-described differential scanning calorimetry, the measurement was carried out under the conditions of cooling to -100 ° C at a temperature drop rate of 10 ° C/min from 23 ° C and heating to 200 ° C at a temperature increase rate of 10 ° C / min. In the above-described differential scanning calorimetry, for example, "EXSTAR DSC7020" manufactured by Seiko Instruments Inc. can be used.

The white ingot for the optical semiconductor device is used to obtain a molded body having a frame portion disposed on the side of the optical semiconductor device in the optical semiconductor device. The white ingot for the optical semiconductor device is preferably used for obtaining a molded body using a mold. The white ingot for the optical semiconductor device is preferably provided with a frame portion disposed on the side of the optical semiconductor device in the optical semiconductor device, and sealed in the region surrounded by the inner surface of the frame portion. A molded body used for filling a sealant as an optical semiconductor element. The white ingot for the optical semiconductor device is preferably used for obtaining a molded body having an opening for extracting light emitted from the optical semiconductor element to the outside.

The white ingot for the optical semiconductor device is preferably a spindle for obtaining a molded body disposed on a lead frame on which the optical semiconductor element is mounted in the optical semiconductor device. The lead frame is, for example, a member for supporting and fixing the optical semiconductor element and electrically connecting the electrode of the optical semiconductor element to the external wiring. The molded body is a molded body for an optical semiconductor device, and is preferably a substrate for mounting an optical semiconductor element.

The white ingot for the optical semiconductor device is preferably used for obtaining the optical semiconductor device on the lead frame on which the optical semiconductor element is mounted, and the optical semiconductor element is obtained. A molded body having a light reflecting portion that reflects light emitted from the optical semiconductor element on the side.

In order to obtain a molded body having a high reflectance of light, the white ingot for an optical semiconductor device is preferably used in an optical semiconductor device to be disposed on a lead frame on which an optical semiconductor element is mounted to surround the light. The semiconductor element is disposed so as to have a molded body having a light reflecting portion that reflects light emitted from the optical semiconductor element on the inner surface. Preferably, the molded body has a frame portion surrounding the optical semiconductor element, and preferably surrounds the optical semiconductor element outer wall member. The formed body is preferably a frame-shaped member. Further, it is preferable that the molded body is different from the adhesive crystal material for bonding (bonding) the optical semiconductor element in the optical semiconductor device. Preferably, the formed body does not contain the above-mentioned adhesive crystal.

The white ingot for the above optical semiconductor device is preferably used for obtaining a plurality of shapes After the pre-divided molded body obtained by joining the bodies, the pre-divided molded body is divided to obtain each molded body. The white curable composition for an optical semiconductor device is preferably used for cutting a pre-divided molded body obtained by connecting a plurality of formed bodies through a lead frame, and then cutting the lead frame to obtain the pre-divided molded body. Each molded body.

The white curable composition for an optical semiconductor device is obtained by using an epoxy compound (A), a hardener (B) (an acid anhydride hardener), a white pigment (C), and a white pigment by a conventionally known method. The filler (D) other than the filler and other ingredients to be blended as needed. As a general method of producing the curable composition, a method in which each component is kneaded by an extruder, a kneader, a roll, an extruder, or the like, and then the kneaded product is cooled and pulverized. From the viewpoint of improving dispersibility, the kneading of the respective components is preferably carried out in a molten state. The conditions of the kneading are appropriately determined depending on the types of the components and the amount of the ingredients. Preferably, the mixing is carried out at 15 to 150 ° C for 5 to 100 minutes, more preferably 5 to 60 minutes at 15 to 150 ° C, and preferably 5 to 40 minutes for mixing at 5 to 150 ° C, preferably For 10~30 minutes at 20~100 °C.

From the viewpoint of further improving the appearance of the molded article, it is preferred to perform heating and kneading at 50 ° C to 90 ° C for 10 minutes to 60 minutes when the white curable composition for an optical semiconductor device is obtained. Aging at 30 ° C, less than 50 ° C for 24 hours to 240 hours. When the temperature of the above aging exceeds 30 ° C, the reaction caused by aging proceeds appropriately, the strength of the ingot is further increased, and the defect of the ingot is less likely to occur. When the temperature of the above aging is less than 50 ° C, the compatibility between the epoxy compound and the acid anhydride hardener is further improved.

The molding system for an optical semiconductor device of the present invention is obtained by molding and curing the above-described optical semiconductor device with a white ingot. Further, the white semiconductor article for the optical semiconductor device is formed using the white curable composition for an optical semiconductor device. The optical semiconductor device is formed into a specific shape by a white ingot. The molded body is preferably used for reflecting light emitted from an optical semiconductor element in an optical semiconductor device.

Examples of the method for obtaining the molded article for an optical semiconductor device using the white ingot for the optical semiconductor device include a compression molding method, a transfer molding method, a laminate molding method, an injection molding method, an extrusion molding method, and a blow molding method. Law and so on. Among them, a transfer molding method is preferred. The white ingot for the above optical semiconductor device is preferably used to obtain the above-mentioned molded body by transfer molding.

In the transfer molding method, for example, at a molding temperature of 100 to 200 ° C, a molding pressure of 5 to 20 MPa, and a molding time of 60 to 300 seconds, the optical semiconductor device is subjected to transfer molding with a white ingot to obtain a molded body. .

(Details of Optical Semiconductor Device and Embodiment of Optical Semiconductor Device)

An optical semiconductor device according to the present invention includes a lead frame, an optical semiconductor element mounted on the lead frame, and a molded body having a frame portion disposed on the lead frame and disposed on a side of the optical semiconductor element. The above-described molding system of the above-described optical semiconductor device is obtained by molding and curing the above-described optical semiconductor device with a white ingot. The white ingot for the optical semiconductor device is formed using the white curable composition for an optical semiconductor device.

In the optical semiconductor device of the present invention, it is preferable that an inner surface of the molded body is a light reflecting portion that reflects light emitted from the optical semiconductor element.

In Figs. 1(a) and 1(b), an example of an optical semiconductor device according to an embodiment of the present invention is schematically shown in a cross-sectional view and a perspective view.

The optical semiconductor device 1 of the present embodiment includes a lead frame 2, an optical semiconductor element 3, a first molded body 4, and a second molded body 5. The optical semiconductor element 3 is preferably a light emitting diode (LED). The first molded body 4 and the second molded body 5 are not integrally formed, and are two different members. The first molded body 4 and the second molded body 5 may be integrally formed. The first molded body 4 is a frame portion. The second molded body 5 is a bottom portion. In the optical semiconductor device 1, the molded body has a frame portion (first molded body 4) and a bottom portion (second molded body 5). The frame portion of the first molded body 4 is an outer wall portion. The frame portion of the first molded body 4 is annular.

Further, the molded body may be a molded body having no bottom portion. A molded body having a frame portion obtained by molding and hardening the above-mentioned ingot may be used in combination with other bottom members. The molded body may be a frame-shaped molded body of only the frame portion. The bottom member may also be a formed body.

The optical semiconductor element 3 is mounted on the lead frame 2 and disposed. Moreover, the first molded body 4 (frame portion) is disposed on the lead frame 2. Further, a second molded body 5 (bottom portion) is disposed between the plurality of lead frames 2 and below the lead frame 2. Further, the molded body or the bottom member may not be disposed under the lead frame, and the lead frame may be exposed. The optical semiconductor element 3 is disposed inside the first molded body 4. The first molded body 4 is disposed on the side of the optical semiconductor element 3, and the first molded body 4 is disposed to surround the optical semiconductor element 3. The first and second molded bodies 4 and 5 (the molded body having the frame portion and the bottom portion) are cured products of the white curable composition for an optical semiconductor device described above, and the white semiconductor article is used for the optical semiconductor device. It is obtained by forming and hardening it. Therefore, the first molded body 4 has light reflectivity and has a light reflecting portion on the inner surface 4a. That is, the inner surface 4a of the first molded body 4 is a light reflecting portion. Therefore, the periphery of the optical semiconductor element 3 is surrounded by the light-reflecting inner surface 4a of the first molded body 4. The first molded body 4 may be a cured product of the white curable composition for an optical semiconductor device, or may be obtained by molding and curing the optical semiconductor device in a white ingot.

The first molded body 4 (frame portion) has an opening for extracting light emitted from the optical semiconductor element 3 to the outside. The first and second molded bodies 4 and 5 are white. The inner surface 4a of the first molded body 4 is formed such that the diameter of the inner surface 4a gradually increases toward the open end. Therefore, among the light emitted from the optical semiconductor element 3, the light indicated by the arrow B reaching the inner surface 4a is reflected by the inner surface 4a, and travels to the front side of the optical semiconductor element 3.

The optical semiconductor element 3 is connected to the lead frame 2 using a die bonding material 6. The cement material 6 has electrical conductivity. A bonding pad (not shown) provided on the optical semiconductor element 3 and the lead frame 2 are electrically connected by a bonding wire 7. The sealing agent 8 is filled in a region surrounded by the inner surface 4a of the first molded body 4 so as to seal the optical semiconductor element 3 and the bonding wires 7. Inside.

In the optical semiconductor device 1, when the optical semiconductor element 3 is driven, light is emitted as indicated by a broken line A. In the optical semiconductor device 1, not only light that is irradiated from the optical semiconductor element 3 to the upper side opposite to the upper surface of the lead frame 2 but also light that reaches the inner surface 4a of the first molded body 4 is present as indicated by an arrow B. The light that is reflected. Therefore, the brightness of the light extracted from the optical semiconductor device 1 is brighter.

A variation of the optical semiconductor device 1 shown in Fig. 1 is shown in Fig. 2 . In the optical semiconductor device 1 shown in FIG. 1 and the optical semiconductor device 21 shown in FIG. 2, the electrical connection structures of only the adhesive crystals 6, 22 and the bonding wires 7 and 23 are different. The die bonding material 6 in the optical semiconductor device 1 has electrical conductivity. On the other hand, the optical semiconductor device 21 has the die bond 22, and the die bond 22 does not have conductivity. In the optical semiconductor device 1, a bonding pad (not shown) provided on the optical semiconductor element 3 and the lead frame 2 (the lead frame located on the right side in FIG. 1(a)) are electrically connected by a bonding wire 7. The optical semiconductor device 21 has a bonding wire 23 in addition to the bonding wires 7. In the optical semiconductor device 21, a bonding pad (not shown) provided on the optical semiconductor element 3 and the lead frame 2 (the lead frame located on the right side in FIG. 2) are electrically connected by a bonding wire 7, and are further provided on A bonding pad (not shown) on the optical semiconductor element 3 and the lead frame 2 (the lead frame on the left side in FIG. 2) are electrically connected by a bonding wire 23.

A variation of the optical semiconductor device 21 shown in Fig. 2 is shown in Fig. 3. The optical semiconductor device 31 shown in FIG. 3 is also a modification of the optical semiconductor device 1 shown in FIG. 1. In the optical semiconductor device 21 shown in FIG. 2 and the optical semiconductor device 31 shown in FIG. 3, only the structures of the first and second molded bodies 4 and 5 and the molded body 32 are different. In the optical semiconductor device 21, the first and second molded bodies 4 and 5 are used, and the first molded body 4 is disposed on the lead frame 2, and the second molded body 5 is disposed between the plurality of lead frames 2 and the leads. Below the frame 2. On the other hand, in the optical semiconductor device 31, one molded body 32 is used. The molded body 32 has a frame portion 32a disposed on the lead frame 2 and a filling portion 32b disposed between the plurality of lead frames 2. The frame portion 32a is integrally formed with the filling portion 32b. As described above, the optical semiconductor device only has to be semi-conductive to light The frame portion disposed on the side of the optical semiconductor element in the body device may be used. The formed body may not be disposed below the lead frame. The formed body may not have a bottom portion disposed below the lead frame. The back side of the lead frame can also be exposed.

In addition, the structure shown in FIGS. 1 to 3 is only an example of the optical semiconductor device of the present invention, and the structure of the molded body and the package structure of the optical semiconductor element can be appropriately changed.

In addition, as for the pre-divided optical semiconductor device component 11 in which a plurality of optical semiconductor device components are connected as shown in FIG. 4, the component 11 for pre-divided optical semiconductor device is cut off at a portion indicated by a broken line X. Parts for each optical semiconductor device are obtained. The pre-divided optical semiconductor device component 11 includes a pre-divided lead frame 2A, a pre-divided first molded body 4A, and a pre-divided second molded body 5A. After the components for the optical semiconductor device are obtained, the optical semiconductor device 3 is mounted, and the optical semiconductor device 3 is sealed by the sealant 8 to obtain the optical semiconductor device 1. When the portion of the lead frame 2A before division is cut at a portion indicated by a broken line X, the lead frame 2 is obtained. When the first molded body 4A before the division is cut at a portion indicated by a broken line X, the first molded body 4 is obtained. When the second molded body 5A before the division is cut at a portion indicated by a broken line X, the second molded body 5 is obtained.

Further, a pre-divided optical semiconductor device 12 in which a plurality of pre-divided optical semiconductor devices are connected as shown in FIG. 5 can be prepared, and the pre-divided optical semiconductor device 12 can be cut at a portion indicated by a broken line X to obtain each optical semiconductor. Device. The pre-divided optical semiconductor device 12 includes a pre-divided lead frame 2A, a pre-divided first molded body 4A, and a pre-divided second molded body 5A. In the pre-divided optical semiconductor device 12, the optical semiconductor device 3 is mounted on the pre-divided lead frame 2A and disposed in the same manner as the optical semiconductor devices 1, 21, and 31 shown in FIGS. Further, in FIGS. 4 and 5, in the pre-divided optical semiconductor device component and the pre-divided optical semiconductor device, a plurality of molded bodies are connected to each other to form a pre-divided molded body, but a plurality of formed bodies may be unjoined. The components for the front-end semiconductor device and the pre-divided optical semiconductor device are divided to obtain components for the optical semiconductor device and the optical semiconductor device.

Hereinafter, specific embodiments and comparative examples of the present invention will be enumerated, thereby showing the present invention. Bright. The invention is not limited to the following examples.

In the examples and comparative examples, the following materials were used.

(epoxy compound (A))

1) EHPE3150 (epoxy resin with alicyclic skeleton, manufactured by Daicel, epoxy equivalent 177)

2) TEPIC-S (triglycidyl isocyanurate, manufactured by Nissan Chemical Co., Ltd., epoxy equivalent 100)

(hardener (B))

1) RIKACID MH (4-methylhexahydrophthalic anhydride, manufactured by Nippon Chemical and Chemical Co., Ltd., melting point -30 ° C)

2) RIKACID HH (hexahydrophthalic anhydride, manufactured by Nippon Chemical and Chemical Co., Ltd., melting point 33 ° C)

(white pigment (C))

1) CR-58 (titanium oxide, rutile type, surface treatment by Al, average particle size 0.25 μm, manufactured by Ishihara Sangyo Co., Ltd.)

2) UT771 (titanium oxide, rutile type, surface treated by Al, Zr, average particle size 0.25 μm, treated with organic matter, manufactured by Ishihara Sangyo Co., Ltd.)

3) One type of zinc oxide (average particle size 1 μm, manufactured by 堺Chemical Industries Co., Ltd.)

4) UEP (zirconia, average particle size 0.5 μm, manufactured by First Rare Element Chemical Industry Co., Ltd.)

(filler (D))

1) MSR-3512 (spherical cerium oxide, average particle size 30 μm, manufactured by Ronson Corporation)

2) AA (broken cerium oxide, average particle size 6 μm, manufactured by Ronson Corporation)

3) B-55 (barium sulfate as a crushing filler, an average particle diameter of 1.2 μm, manufactured by Nippon Chemical Industry Co., Ltd.)

(hardening accelerator (E))

1) SA102 (DBU-octanoate, manufactured by SAN-APRO)

2) PX-4ET (o, o-diethyl dithiophosphate tetra-n-butyl fluorene, manufactured by Nippon Chemical Industry Co., Ltd.)

3) PX-4PB (tetrabutylphosphonium tetraphenylborate, manufactured by Nippon Chemical Industry Co., Ltd.)

4) C11Z-CN (1-cyanoethyl-2-undecylimidazole, manufactured by Shikoku Chemical Industry Co., Ltd.)

(release agent (F))

1) Seridasuto 3715 (polyethylene wax, manufactured by Clariant Japan)

2) M-9676 (stearyl stearate, manufactured by Nippon Oil Co., Ltd.)

(Examples 1 to 4, Reference Example 5, Examples 6 to 9 and Comparative Examples 1 to 4)

The components shown in the following Table 1 were blended in the amounts shown in the following Table 1 (the blending unit is part by weight), and the mixture was used ("Laboplastomill R-60" manufactured by Toyo Seiki Seisakusho Co., Ltd.) in Table 1. After the temperature and time conditions (heating and kneading step) are shown as heating and kneading, the cured composition is obtained by aging or not aging under the conditions of temperature and time shown in Table 1 (aging step). It is pulverized to obtain a powdery curable composition.

Then, using a mold for making a mold composed of one of a 杵 mold and a 臼 mold which is a superhard alloy in contact with the resin, the mold is molded at a load of 3 t at room temperature (23 ° C). The obtained powdery curable composition was molded under the conditions of a tablet pressure to prepare a cylindrical ingot having a diameter of 13 mm and a height of 30 mm.

(measurement)

(1) Glass transfer point of white curable composition for optical semiconductor device

50 mg of the obtained powdery curable composition was weighed into an aluminum pan to carry out differential scanning calorimetry (DSC). In order to perform the above DSC, "EXSTAR DSC7020" manufactured by Seiko Instruments Inc. is used. The measurement conditions are from room temperature (23 ° C), after cooling to -100 ° C at a cooling rate of 10 ° C / min, and heating to 200 ° C at a temperature increase rate of 10 ° C / min. condition.

(2) Compressive elastic modulus and compressive strength of white ingots for optical semiconductor devices

Using the obtained ingot, the compressive elastic modulus and the compressive strength were measured at 23 ° C according to JIS (Japanese Industrial Standards) K7181.

(Evaluation)

(1) Degree of wear of the ingot (easyness of the defect)

After measuring the weight of the obtained tablet (the spindle before the test), the ingot was placed in a tablet abrasion tester and rotated 100 times at a speed of 25 revolutions per minute. The ingot after the end of the rotation (the ingot after the test) was taken out, and the weight of the object to be removed was measured by a 10-mesh sieve. The degree of wear (%) was calculated by the following formula (X).

Degree of wear (%) = {(weight of the ingot before the test - weight of the ingot after the test) / weight of the ingot before the test} × 100 Formula (X)

The lower the degree of wear of the ingot, the less likely the ingot is to be broken, and the higher the uniformity of the ingot.

(2) Formability

After forming a circuit by etching on a copper material (TAMAC 194), silver plating was performed to obtain a lead frame (silver-plated surface, thickness 0.2 mm).

A disposable molding die having 150 concave portions (optical semiconductor element mounting portions) arranged in a matrix of 15 vertical × 10 horizontal rows was prepared as a mold. The cavity dimensions were set to 4 mm x 2 mm each and 1 mm depth. After the mold was cleaned three times using a mold cleaning material ("NIKALET RCC" manufactured by Nippon Carbide Co., Ltd.), mold release property ("NIKALET ECR-C KU" manufactured by Nippon Carbide Co., Ltd.) was used to impart mold release property to the mold.

Transfer molding of the obtained ingot is carried out using a mold to which mold release property is applied, and a substrate for mounting an optical semiconductor device is obtained. The optical semiconductor device mounting substrate obtained by the inspection was visually inspected, and the moldability was determined according to the following criteria.

[Formation criteria for formability]

○: The molded body does not have any defects such as defects due to poor filling and seams.

×: One or more of the molded articles have defects such as defects due to filling failure and joints such as seams.

The results are shown in Table 1 below.

Further, in Reference Example 5, good results were obtained with respect to the degree of wear and formability, but in Reference Example 5, compared with Examples 1 to 4 and 6 to 9, since triglycidyl isocyanurate was not used, Therefore, the ingot and the formed body can be seen with a slight coloration.

Claims (11)

A white ingot for an optical semiconductor device, which is used for obtaining a molded body having a frame portion disposed on the side of an optical semiconductor device in an optical semiconductor device, and is a white curable composition for an optical semiconductor device using white. In addition, the white curable composition for an optical semiconductor device contains an epoxy compound, an acid anhydride curing agent, a white pigment, a filler other than a white pigment, and a curing accelerator, and the optical semiconductor device is white-hardened. The composition does not simultaneously contain both hexahydrophthalic anhydride and methylhexahydrophthalic anhydride as the above-mentioned anhydride hardener, and the above epoxy compound contains triglycidyl isocyanurate in a diameter of 13 mm and a height. When the compressive elastic modulus and the compressive strength of the 30 mm cylindrical ingot were measured, the compressive elastic modulus was 100 MPa or more and 2000 MPa or less, and the compressive strength was 300 N or more. A white ingot for an optical semiconductor device according to claim 1, which is used for obtaining the above-mentioned molded body by transfer molding. A white ingot for an optical semiconductor device according to claim 1, wherein when the white curable composition for an optical semiconductor device is obtained, the mixture is heated and kneaded at 50 to 90 ° C for 10 minutes to 60 minutes, and then at 30 ° C or more. Ageing is not carried out at 50 ° C for 24 hours to 240 hours. The white ingot for an optical semiconductor device according to claim 1, wherein the glass transition point obtained by the differential scanning calorimetry of the white curable composition for an optical semiconductor device is 0° C. or higher and 40° C. or lower. A white ingot for an optical semiconductor device according to claim 1, wherein the white curable composition for the optical semiconductor device contains an acid anhydride curing agent having a melting point of 50 ° C or less. In the above-mentioned acid anhydride curing agent, the content of the acid anhydride curing agent having a melting point of 50 ° C or less is 20% by weight or more in 100% by weight of the total amount of the acid anhydride curing agent. A white ingot for an optical semiconductor device according to claim 1, wherein the epoxy compound has an epoxy equivalent of 300 or less. The white ingot for an optical semiconductor device according to any one of claims 1 to 6, wherein the white pigment is titanium oxide, zinc oxide or zirconium oxide, and the filler contains cerium oxide. The white ingot for an optical semiconductor device according to any one of claims 1 to 6, which is used for obtaining a molded article disposed on a lead frame on which an optical semiconductor element is mounted in an optical semiconductor device. The white ingot for an optical semiconductor device according to any one of claims 1 to 6, which is obtained by dividing the pre-divided molded body by obtaining a pre-divided molded body obtained by connecting a plurality of formed bodies, and obtaining each of the pre-divided molded bodies. Shaped body. A molded article for an optical semiconductor device, which is a molded body having a frame portion disposed on the side of the optical semiconductor device in the optical semiconductor device, and the molding system for the optical semiconductor device is as claimed in claims 1 to 9. An optical semiconductor device is obtained by forming and hardening a white ingot. An optical semiconductor device comprising: a lead frame; an optical semiconductor element mounted on the lead frame; and a molded body having a frame portion disposed on the lead frame and disposed on a side of the optical semiconductor element, and The forming system is obtained by molding and hardening the optical semiconductor device according to any one of claims 1 to 9 with a white ingot.