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TWI620834B - Flexible light-emitting apparatus and method of fabricating the same - Google Patents

Flexible light-emitting apparatus and method of fabricating the same Download PDF

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TWI620834B
TWI620834B TW106107739A TW106107739A TWI620834B TW I620834 B TWI620834 B TW I620834B TW 106107739 A TW106107739 A TW 106107739A TW 106107739 A TW106107739 A TW 106107739A TW I620834 B TWI620834 B TW I620834B
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layer
pair
region
single layer
pins
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TW106107739A
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TW201833385A (en
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何信政
陳在宇
鄭鴻川
周瑞崇
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達方電子股份有限公司
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Abstract

本發明揭露一種可撓式發光裝置及其製造方法。本發明之可撓式發光裝置包含高分子基材、電路以及至少一個已封裝的發光二極體元件。電路包含被覆於高分子基材的沉積區域上之化學鍍催化油墨層以及第一金屬層。第一金屬層係藉由化學鍍製程沉積於化學鍍催化油墨層上。電路包含至少一對引腳。每一個已封裝的發光二極體元件對應至少一對引腳中之一對引腳,並且包含一對接腳。每一個已封裝的發光二極體元件係固定在高分子基材上,且其該對接腳與其對應的該對引腳形成電性連接。 The invention discloses a flexible light emitting device and a manufacturing method thereof. The flexible light-emitting device of the present invention comprises a polymer substrate, an electrical circuit, and at least one encapsulated light-emitting diode element. The circuit includes an electroless plating catalytic ink layer coated on a deposition region of the polymer substrate and a first metal layer. The first metal layer is deposited on the electroless plating catalyst layer by an electroless plating process. The circuit contains at least one pair of pins. Each of the packaged light emitting diode elements corresponds to one of the at least one pair of pins and includes a pair of pins. Each of the packaged light emitting diode elements is fixed on the polymer substrate, and the pair of pins are electrically connected to the corresponding pair of pins.

Description

可撓式發光裝置及其製造方法 Flexible light emitting device and method of manufacturing same

本發明係關於一種可撓式發光裝置及其製造方法,並且特別是關於具有良好品質的導線及耐彎折的彎折區域之可撓式發光裝置及其製造方法。 The present invention relates to a flexible light-emitting device and a method of manufacturing the same, and more particularly to a flexible light-emitting device having a good quality wire and a bend-resistant bending region, and a method of manufacturing the same.

可撓式發光裝置的應用範圍廣泛,例如,裝設於發光鍵盤內做為背光源等。 The flexible light-emitting device has a wide range of applications, for example, being installed in a light-emitting keyboard as a backlight.

關於可撓式發光裝置的先前技術皆是將已封裝的發光二極體電性連接在軟性基材上的電路上。在軟性基材上形成電路的先前技術有些是局部塗佈銀漿,進而形成導電線路。然而,銀漿所形成的線路存有阻值不易控制的問題。 The prior art regarding flexible light-emitting devices is to electrically connect the packaged light-emitting diodes to a circuit on a flexible substrate. Some of the prior art techniques for forming circuits on flexible substrates have been partial coating of silver paste to form conductive traces. However, the line formed by the silver paste has a problem that the resistance value is not easily controlled.

在軟性基材上形成電路的先前技術另有將銅箔貼合在基材上,再利用黃光蝕刻製程去除銅箔不需要的部分,來達成阻值穩定的銅線路。然而,此先前技術浪費不少銅銅箔,成本高。 The prior art for forming a circuit on a flexible substrate additionally has a copper foil attached to the substrate, and a yellow etching process is used to remove unnecessary portions of the copper foil to achieve a stable copper line. However, this prior art wastes a lot of copper and copper foil and is costly.

此外,先前技術的可撓式發光裝置其在彎折區域處線路的強度以及本身的厚度仍有改良的空間。 In addition, the prior art flexible illumination device has room for improvement in the strength of the line at the bend region as well as its thickness.

因此,本發明所欲解決之一技術問題在於提供一種可撓式發光裝置及其製造方法。本發明之可撓式發光裝置具有良好品質的導線及耐彎折的彎折區域,進一步本發明之可撓式發光裝置的厚度減薄。並且,本發明之可撓式發光裝 置的製造方法的成本低廉。 Therefore, one technical problem to be solved by the present invention is to provide a flexible light-emitting device and a method of manufacturing the same. The flexible light-emitting device of the present invention has a good quality wire and a bending-resistant bending region, and further reduces the thickness of the flexible light-emitting device of the present invention. Moreover, the flexible illuminating device of the present invention The manufacturing method is inexpensive.

本發明之第一較佳具體實施例之可撓式發光裝置包含高分子基材、電路以及至少一個已封裝的發光二極體元件。高分子基材其上定義沉積區域。高分子基材具有第一區以及第二區。電路包含化學鍍催化油墨層以及第一金屬層。化學鍍催化油墨層係被覆於高分子基材的沉積區域上。第一金屬層係藉由化學鍍製程沉積於化學鍍催化油墨層上。電路包含至少一對引腳。至少一對引腳係位於高分子基材的第一區上。每一個已封裝的發光二極體元件對應至少一對引腳中之一對引腳,並且包含一對接腳。每一個已封裝的發光二極體元件係固定在高分子基材上,並且其該對接腳與其對應的該對引腳形成電性連接。 A flexible light-emitting device according to a first preferred embodiment of the present invention comprises a polymer substrate, an electrical circuit, and at least one encapsulated light-emitting diode element. The polymer substrate defines a deposition region thereon. The polymer substrate has a first region and a second region. The circuit includes an electroless plating catalytic ink layer and a first metal layer. The electroless plating catalyst layer is coated on the deposition area of the polymer substrate. The first metal layer is deposited on the electroless plating catalyst layer by an electroless plating process. The circuit contains at least one pair of pins. At least one pair of pins is located on the first region of the polymeric substrate. Each of the packaged light emitting diode elements corresponds to one of the at least one pair of pins and includes a pair of pins. Each of the packaged light emitting diode elements is fixed on the polymer substrate, and the pair of pins are electrically connected to the corresponding pair of pins.

本發明之第二較佳具體實施例之可撓式發光裝置包含高分子基材、電路、至少一個發光二極體裸晶以及至少一個保護蓋。高分子基材其上定義沉積區域。高分子基材具有第一區以及第二區。電路包含化學鍍催化油墨層以及第一金屬層。化學鍍催化油墨層係被覆於高分子基材的沉積區域上。第一金屬層係藉由化學鍍製程沉積於化學鍍催化油墨層上。電路包含至少一對引腳。至少一對引腳係位於高分子基材的第一區上。每一個發光二極體裸晶對應至少一對引腳中之一對引腳,並且包含一對焊墊。每一個發光二極體裸晶係固定在高分子基材上,並且其該對焊墊與其對應的該對引腳形成電性連接。每一個保護蓋對應一個發光二極體裸晶。每一個保護蓋係形成以覆蓋其對應的發光二極體裸晶。 A flexible light-emitting device according to a second preferred embodiment of the present invention comprises a polymer substrate, an electric circuit, at least one light-emitting diode bare crystal, and at least one protective cover. The polymer substrate defines a deposition region thereon. The polymer substrate has a first region and a second region. The circuit includes an electroless plating catalytic ink layer and a first metal layer. The electroless plating catalyst layer is coated on the deposition area of the polymer substrate. The first metal layer is deposited on the electroless plating catalyst layer by an electroless plating process. The circuit contains at least one pair of pins. At least one pair of pins is located on the first region of the polymeric substrate. Each of the light emitting diodes corresponds to one of the pair of pins and includes a pair of pads. Each of the light emitting diodes is fixed on the polymer substrate, and the pair of pads are electrically connected to the corresponding pair of pins. Each protective cover corresponds to one LED diode. Each protective cover is formed to cover its corresponding light-emitting diode die.

於一具體實施例中,高分子基材可以是由聚對苯二甲酸乙二酯、聚醯亞胺、聚酸甲酯、聚甲基丙烯酸甲酯,或其他類似的商用高分子材料所形成。 In a specific embodiment, the polymer substrate may be formed of polyethylene terephthalate, polyimide, polymethyl methacrylate, polymethyl methacrylate, or other similar commercial polymer materials. .

於一具體實施例中,第一金屬層可以是單層Cu 層、多層Ag/Au層/多層Ag/Au/Sn/Ni層/單層Cu層、單層Sn層/單層Cu層、單層Ag層/單層Cu層、單層Au層/單層Cu層、單層Ag層/單層Ni層/單層Cu層、單層Au層/單層Ni層/單層Cu層、單層Sn層/單層Au層/單層Ag層/單層Ni層/單層Cu層等。 In a specific embodiment, the first metal layer may be a single layer of Cu. Layer, multilayer Ag/Au layer/multilayer Ag/Au/Sn/Ni layer/single layer Cu layer, single layer Sn layer/single layer Cu layer, single layer Ag layer/single layer Cu layer, single layer Au layer/single layer Cu layer, single layer Ag layer / single layer Ni layer / single layer Cu layer, single layer Au layer / single layer Ni layer / single layer Cu layer, single layer Sn layer / single layer Au layer / single layer Ag layer / single layer Ni layer / single layer Cu layer, and the like.

進一步,第二區定義能彎折區域。位在能彎折區域的電路並且包含第二金屬層。第二金屬層可以藉由電鍍製程沉積於第一金屬層上。位在第二區的末端上的電路用以連接外部電源。 Further, the second zone defines a bendable area. A circuit located in a bendable region and comprising a second metal layer. The second metal layer may be deposited on the first metal layer by an electroplating process. A circuit located at the end of the second zone is used to connect an external power source.

於一具體實施例中,每一個保護蓋摻入均勻分布的多顆螢光粉顆粒。 In one embodiment, each of the protective covers incorporates a plurality of uniformly distributed phosphor particles.

本發明之第三較佳具體實施例之製造可撓式發光裝置的方法首先製備高分子基材,其中高分子基材其上定義沉積區域,高分子基材具有第一區以及第二區。接著,根據本發明之第三較佳具體實施例之方法於高分子基材的沉積區域上,被覆化學鍍催化油墨層。接著,根據本發明之第三較佳具體實施例之方法對高分子基材執行化學鍍製程,進而於化學鍍催化油墨層上沉積金屬層,其中化學鍍催化油墨層與金屬層構成電路,電路包含至少一對引腳,至少一對引腳係位於高分子基材的第一區上。最後,根據本發明之第三較佳具體實施例之方法將至少一個已封裝的發光二極體元件固定在高分子基材上,其中每一個已封裝的發光二極體元件對應該至少一對引腳中之一對引腳並且包含一對接腳,每一個已封裝的發光二極體元件其該對接腳與其對應的該對引腳係形成電性連接。 A method of manufacturing a flexible light-emitting device according to a third preferred embodiment of the present invention first prepares a polymer substrate, wherein the polymer substrate defines a deposition region thereon, and the polymer substrate has a first region and a second region. Next, according to the method of the third preferred embodiment of the present invention, the electroless plating catalytic ink layer is coated on the deposition region of the polymer substrate. Then, according to the method of the third preferred embodiment of the present invention, an electroless plating process is performed on the polymer substrate, and then a metal layer is deposited on the electroless plating catalyst ink layer, wherein the electroless plating catalytic ink layer and the metal layer form a circuit, and the circuit The at least one pair of pins are included, and at least one pair of pins are located on the first region of the polymer substrate. Finally, at least one packaged light-emitting diode element is fixed on the polymer substrate according to the method of the third preferred embodiment of the present invention, wherein each packaged light-emitting diode element corresponds to at least one pair One of the pins is a pair of pins and includes a pair of pins, each of the packaged LED components having the pair of pins electrically connected to the corresponding pair of pins.

進一步,高分子基材的第二區定義能彎折區域。電路包含位在彎折區域上之覆蓋區塊以及一對輔助線路。該對輔助線路分別電連接至覆蓋區塊。根據本發明之第三較佳 具體實施例之方法並且在對高分子基材執行化學鍍製程之步驟與將至少一個已封裝的發光二極體元件固定在高分子基材上之步驟之間,先藉由該對輔助線路對覆蓋區塊執行電鍍製程,進而於覆蓋區塊上沉積第二金屬層,並且移除已沉積第二金屬層的部分覆蓋區塊,以形成多條主線路,其中位在高分子基材的第二區的末端上之電路用以連接外部電源。 Further, the second region of the polymer substrate defines a bendable region. The circuit includes a coverage block located on the bend region and a pair of auxiliary lines. The pair of auxiliary lines are electrically connected to the coverage block, respectively. Third preferred according to the present invention The method of the specific embodiment and between the step of performing an electroless plating process on the polymer substrate and the step of fixing the at least one packaged light emitting diode element on the polymer substrate, first by the pair of auxiliary lines The capping block performs an electroplating process, thereby depositing a second metal layer on the capping block, and removing a portion of the capping block on which the second metal layer has been deposited to form a plurality of main lines, wherein the polymer substrate is in the first The circuit on the end of the second zone is used to connect an external power source.

進一步,高分子基材的第二區定義能彎折區域。根據本發明之第三較佳具體實施例之方法並且在對高分子基材執行化學鍍製程之步驟與將至少一個已封裝的發光二極體元件固定在高分子基材上之步驟之間,先對除了位在能彎折區域上的電路之其他部分被覆絕緣層,並且執行電鍍製程,進而於位在能彎折區域之第一金屬層上沉積第二金屬層,並且移除絕緣層,其中位在高分子基材的第二區的末端上之電路用以連接外部電源。 Further, the second region of the polymer substrate defines a bendable region. According to the method of the third preferred embodiment of the present invention and between the step of performing an electroless plating process on the polymer substrate and the step of fixing the at least one packaged light emitting diode element on the polymer substrate, First covering the insulating layer except for other portions of the circuit located on the bendable region, and performing an electroplating process to deposit a second metal layer on the first metal layer located in the bendable region, and removing the insulating layer, A circuit in which the end of the second region of the polymer substrate is connected to an external power source.

本發明之第四較佳具體實施例之製造可撓式發光裝置的方法首先製備高分子基材,其中高分子基材其上定義沉積區域,高分子基材具有第一區以及第二區。接著,根據本發明之第四較佳具體實施例之方法於高分子基材的沉積區域上,被覆化學鍍催化油墨層。接著,根據本發明之第四較佳具體實施例之方法對高分子基材執行化學鍍製程,進而於化學鍍催化油墨層上沉積金屬層,其中化學鍍催化油墨層與金屬層構成電路,電路包含至少一對引腳,至少一對引腳係位於高分子基材的第一區上。接著,根據本發明之第四較佳具體實施例之方法將至少一個發光二極體裸晶固定在該高分子基材上,其中每一個發光二極體裸晶對應至少一對引腳中之一對引腳並且包含一對焊墊,每一個發光二極體裸晶其該對焊墊與其對應的該對引腳係形成電性連接。最後,根據本發明之第四較佳具體實施例之方法形成至少一個保護蓋,其中每一個保護蓋對應一個發光二極體裸晶,每一個保護蓋 係形成以覆蓋其對應的發光二極體裸晶。 A method of manufacturing a flexible light-emitting device according to a fourth preferred embodiment of the present invention first prepares a polymer substrate, wherein the polymer substrate defines a deposition region thereon, and the polymer substrate has a first region and a second region. Next, according to the method of the fourth preferred embodiment of the present invention, the electroless plating catalytic ink layer is coated on the deposition region of the polymer substrate. Then, according to the method of the fourth preferred embodiment of the present invention, an electroless plating process is performed on the polymer substrate, and then a metal layer is deposited on the electroless plating catalyst layer, wherein the electroless plating catalyst layer and the metal layer form a circuit, and the circuit The at least one pair of pins are included, and at least one pair of pins are located on the first region of the polymer substrate. Next, according to the method of the fourth preferred embodiment of the present invention, at least one light emitting diode is barely fixed on the polymer substrate, wherein each of the light emitting diodes corresponds to at least one pair of pins. a pair of pins and comprising a pair of pads, each of the LEDs being electrically connected to the corresponding pair of pins. Finally, at least one protective cover is formed according to the method of the fourth preferred embodiment of the present invention, wherein each protective cover corresponds to one of the light emitting diode bare crystals, and each protective cover It is formed to cover its corresponding light-emitting diode bare crystal.

與先前技術不同,本發明之可撓式發光裝置具有良好品質的導線及耐彎折的彎折區域。進一步,本發明之可撓式發光裝置採用發光二極體裸晶而非已封裝的發光二極體元件,藉此,本發明之可撓式發光裝置的厚度減薄。並且,本發明之可撓式發光裝置的製造方法的成本低廉。 Unlike the prior art, the flexible light-emitting device of the present invention has a good quality wire and a bend-resistant bending region. Further, the flexible light-emitting device of the present invention employs a light-emitting diode bare crystal instead of a packaged light-emitting diode element, whereby the thickness of the flexible light-emitting device of the present invention is reduced. Further, the method of manufacturing the flexible light-emitting device of the present invention is inexpensive.

關於本發明之優點與精神可以藉由以下的發明詳述及所附圖式得到進一步的瞭解。 The advantages and spirit of the present invention will be further understood from the following detailed description of the invention.

1‧‧‧可撓式發光裝置 1‧‧‧Flexible illuminating device

10‧‧‧高分子基材 10‧‧‧ polymer substrate

102‧‧‧沉積區域 102‧‧‧Deposition area

104‧‧‧第一區 104‧‧‧First District

106‧‧‧第二區 106‧‧‧Second District

108‧‧‧能彎折區域 108‧‧‧Flexible area

12‧‧‧電路 12‧‧‧ Circuitry

122‧‧‧化學鍍催化油墨層 122‧‧‧Chemical plating catalytic ink layer

124‧‧‧第一金屬層 124‧‧‧First metal layer

125‧‧‧第二金屬層 125‧‧‧Second metal layer

126a、126b、126c、126d、126e、126f‧‧‧引腳 126a, 126b, 126c, 126d, 126e, 126f‧‧‧ pins

127‧‧‧覆蓋區塊 127‧‧‧ Coverage block

128a、128b‧‧‧輔助線路 128a, 128b‧‧‧Auxiliary lines

129a、129b‧‧‧主線路 129a, 129b‧‧‧ main line

14a、14b、14c‧‧‧已封裝的發光二極體元件 14a, 14b, 14c‧‧‧ packaged light-emitting diode components

142a、142b、142c、142d、142e、142f‧‧‧接腳 142a, 142b, 142c, 142d, 142e, 142f‧‧‧ pins

2‧‧‧可撓式發光裝置 2‧‧‧Flexible lighting device

20‧‧‧高分子基材 20‧‧‧ polymer substrate

202‧‧‧沉積區域 202‧‧‧Deposition area

204‧‧‧第一區 204‧‧‧First District

206‧‧‧第二區 206‧‧‧Second District

208‧‧‧能彎折區域 208‧‧‧Flexible area

22‧‧‧電路 22‧‧‧ Circuitry

222‧‧‧化學鍍催化油墨層 222‧‧‧ Electroless plating catalytic ink layer

224‧‧‧第一金屬層 224‧‧‧First metal layer

225‧‧‧第二金屬層 225‧‧‧Second metal layer

226a、226b、226c、226d、226e、226f‧‧‧引腳 226a, 226b, 226c, 226d, 226e, 226f‧‧‧ pins

24a、24b、24c‧‧‧發光二極體裸晶 24a, 24b, 24c‧‧‧Lighting diodes

242a、242b、242c、242d、242e、242f‧‧‧焊墊 242a, 242b, 242c, 242d, 242e, 242f‧‧ ‧ pads

26a、26b、26c‧‧‧保護蓋 26a, 26b, 26c‧‧‧ protective cover

30‧‧‧電鍍槽 30‧‧‧ plating bath

32a‧‧‧正電極 32a‧‧‧ positive electrode

32b‧‧‧負電極 32b‧‧‧negative electrode

34‧‧‧電解液 34‧‧‧ electrolyte

36‧‧‧絕緣層 36‧‧‧Insulation

圖1係本發明之第一較佳具體實施例之可撓式發光裝置的頂視圖。 1 is a top plan view of a flexible light-emitting device in accordance with a first preferred embodiment of the present invention.

圖2係本發明之第一較佳具體實施例之可撓式發光裝置之一必要元件-高分子基材-的頂式圖。 Figure 2 is a top plan view of an essential component of a flexible light-emitting device of the first preferred embodiment of the present invention - a polymer substrate.

圖3係圖1中可撓式發光裝置沿A-A線的剖面視圖。 3 is a cross-sectional view of the flexible light-emitting device of FIG. 1 taken along line A-A.

圖4係圖1中可撓式發光裝置沿B-B線的剖面視圖。 4 is a cross-sectional view of the flexible light-emitting device of FIG. 1 taken along line B-B.

圖5係本發明之第二較佳具體實施例之可撓式發光裝置的頂視圖。 Figure 5 is a top plan view of a flexible light emitting device in accordance with a second preferred embodiment of the present invention.

圖6係本發明之第二較佳具體實施例之可撓式發光裝置之一必要元件-高分子基材-的頂式圖。 Figure 6 is a top plan view of an essential component of a flexible light-emitting device of the second preferred embodiment of the present invention - a polymer substrate.

圖7及圖8分別係圖5中可撓式發光裝置沿D-D線的剖面視圖。 7 and 8 are cross-sectional views of the flexible light-emitting device of FIG. 5 taken along line D-D, respectively.

圖9係圖5中可撓式發光裝置沿E-E線的剖面視圖。 Figure 9 is a cross-sectional view of the flexible light-emitting device of Figure 5 taken along line E-E.

圖10、圖11及圖12分別係本發明之第一較佳具體實施例之可撓式發光裝置其高分子基材的第二區域上電路執行電鍍製程之各階段的結構的示意圖。 10, FIG. 11, and FIG. 12 are schematic views showing the structure of each stage of the electroplating process of the circuit on the second region of the polymer substrate of the flexible light-emitting device of the first preferred embodiment of the present invention.

圖13及圖14分別係圖1中可撓式發光裝置沿C-C線的剖面之局部結構且安置於電鍍槽內執行電鍍製程之各階段的結構的示意圖。 13 and FIG. 14 are respectively schematic diagrams showing the structure of the partial structure of the flexible light-emitting device of FIG. 1 along the line C-C and disposed in the plating bath to perform various stages of the electroplating process.

請參閱圖1、圖2、圖3及圖4,該等圖式示意地描繪本發明之第一較佳具體實施例之可撓式發光裝置1。圖1以頂視圖示意地繪示本發明之第一較佳具體實施例的可撓式發光裝置1。圖2係本發明之第一較佳具體實施例之可撓式發光裝置1之一必要元件-高分子基材10-的頂式圖。圖3係圖1中可撓式發光裝置1沿A-A線的剖面視圖。圖4係圖1中可撓式發光裝置1沿B-B線的剖面視圖。本發明之第一較佳具體實施例的可撓式發光裝置1可以做為發光鍵盤內的背光源,但並不以此為限。 Referring to Figures 1, 2, 3 and 4, the drawings schematically depict a flexible illumination device 1 of a first preferred embodiment of the present invention. 1 is a top plan view schematically showing a flexible light-emitting device 1 of a first preferred embodiment of the present invention. 2 is a top plan view of an essential component of the flexible light-emitting device 1 of the first preferred embodiment of the present invention - a polymer substrate 10 -. 3 is a cross-sectional view of the flexible light-emitting device 1 of FIG. 1 taken along line A-A. 4 is a cross-sectional view of the flexible light-emitting device 1 of FIG. 1 taken along line B-B. The flexible light-emitting device 1 of the first preferred embodiment of the present invention can be used as a backlight in an illuminated keyboard, but is not limited thereto.

如圖1所示,本發明之第一較佳具體實施例之可撓式發光裝置1包含高分子基材10、電路12以及至少一個已封裝的發光二極體元件(14a、14b、14c)。於圖1中,僅繪示三個已封裝的發光二極體元件(14a、14b、14c)做為代表。 As shown in FIG. 1, a flexible light-emitting device 1 according to a first preferred embodiment of the present invention comprises a polymer substrate 10, a circuit 12, and at least one packaged light-emitting diode element (14a, 14b, 14c). . In Fig. 1, only three packaged light emitting diode elements (14a, 14b, 14c) are shown as representative.

如圖2所示,高分子基材10其上定義沉積區域102。高分子基材10具有第一區104以及第二區106。 As shown in FIG. 2, the polymer substrate 10 defines a deposition region 102 thereon. The polymer substrate 10 has a first region 104 and a second region 106.

如圖3所示,電路12包含化學鍍催化油墨層122以及第一金屬層124。化學鍍催化油墨層122係被覆於高分子基材10的沉積區域102上。第一金屬層124係藉由化學鍍製程沉積於化學鍍催化油墨層122上。 As shown in FIG. 3, circuit 12 includes an electroless plating catalytic ink layer 122 and a first metal layer 124. The electroless plating catalyst ink layer 122 is coated on the deposition region 102 of the polymer substrate 10. The first metal layer 124 is deposited on the electroless plating catalyst ink layer 122 by an electroless plating process.

如圖3所示,電路12包含至少一對引腳(126a、126b、126c、126d、126e、126f)。於圖1及圖3中,僅繪示三對引腳(126a、126b、126c、126d、126e、126f)做為代表。至少一對引腳(126a、126b、126c、126d、126e、126f)係位於高分子基材10的第一區104上。每一個已封裝的發光二極體元件(14a、14b、14c)對應至少一對引腳(126a、126b、126c、126d、126e、126f)中之一對引腳(126a、126b、126c、126d、126e、126f),並且包含一對接腳(142a、142b、142c、142d、142e、142f)。於圖3中,已封裝的發光二極體元件14a包含一對接腳(142a、142b)且對應一對引腳(126a、126b),已封裝的發光二極體元件14b包含一對接腳(142c、142d)且對應一對引腳(126c、126d),已封裝的發光二極體元件14c包含一對接腳(142e、142f)且對應一對引腳(126e、126f)。於圖3中,每一個已封裝的發光二極體元件(14a、14b、14c)皆為從其頂部發出光線,於實際應用中,每一個已封裝的發光二極體元件(14a、14b、14c)也可以是從側邊發出光線的元件。 As shown in FIG. 3, circuit 12 includes at least one pair of pins (126a, 126b, 126c, 126d, 126e, 126f). In FIGS. 1 and 3, only three pairs of pins (126a, 126b, 126c, 126d, 126e, 126f) are shown as representative. At least one pair of pins (126a, 126b, 126c, 126d, 126e, 126f) are located on the first region 104 of the polymeric substrate 10. Each of the packaged LED components (14a, 14b, 14c) corresponds to one of the at least one pair of pins (126a, 126b, 126c, 126d, 126e, 126f) (126a, 126b, 126c, 126d) , 126e, 126f), and includes a pair of pins (142a, 142b, 142c, 142d, 142e, 142f). In FIG. 3, the packaged LED component 14a includes a pair of pins (142a, 142b) and corresponds to a pair of pins (126a, 126b). The packaged LED component 14b includes a pair of pins (142c). 142d) and corresponding to a pair of pins (126c, 126d), the packaged LED component 14c includes a pair of pins (142e, 142f) and corresponds to a pair of pins (126e, 126f). In FIG. 3, each of the packaged LED components (14a, 14b, 14c) emits light from the top thereof. In practical applications, each packaged LED component (14a, 14b, 14c) It can also be a component that emits light from the side.

如圖3所示,每一個已封裝的發光二極體元件(14a、14b、14c)係固定在高分子基材10上,並且其該對接腳(142a、142b、142c、142d、142e、142f)與其對應的該對引腳(126a、126b、126c、126d、126e、126f)形成電性連接。 As shown in FIG. 3, each of the packaged light emitting diode elements (14a, 14b, 14c) is fixed on the polymer substrate 10, and the pair of pins (142a, 142b, 142c, 142d, 142e, 142f) The pair of pins (126a, 126b, 126c, 126d, 126e, 126f) corresponding thereto are electrically connected.

於一具體實施例中,高分子基材10可以是由聚對苯二甲酸乙二酯、聚醯亞胺、聚酸甲酯、聚甲基丙烯酸甲酯,或其他類似的商用高分子材料所形成。 In one embodiment, the polymer substrate 10 may be made of polyethylene terephthalate, polyimide, polymethyl methacrylate, polymethyl methacrylate, or other similar commercial polymer materials. form.

於一具體實施例中,第一金屬層124可以是單層Cu層、多層Ag/Au層/多層Ag/Au/Sn/Ni層/單層Cu層、單層Sn層/單層Cu層、單層Ag層/單層Cu層、單層Au層/單層Cu層、單層Ag層/單層Ni層/單層Cu層、單層Au層/單層Ni層/單層Cu層、單層Sn層/單層Au層/單層Ag層/單層Ni層/單層Cu層等。 In a specific embodiment, the first metal layer 124 may be a single layer of Cu layer, a plurality of layers of Ag/Au layer/multilayer Ag/Au/Sn/Ni layer/single layer of Cu layer, a single layer of Sn layer/single layer of Cu layer, Single layer Ag layer/single layer Cu layer, single layer Au layer/single layer Cu layer, single layer Ag layer/single layer Ni layer/single layer Cu layer, single layer Au layer/single layer Ni layer/single layer Cu layer, Single-layer Sn layer/single-layer Au layer/single-layer Ag layer/single-layer Ni layer/single-layer Cu layer, and the like.

進一步,如圖4所示,第二區106定義能彎折區域108。位在能彎折區域108的電路12並且包含第二金屬層125。第二金屬層125可以藉由電鍍製程沉積於第一金屬層124上。位在第二區106的末端上的電路12用以連接外部電源(未繪示於圖1中)。 Further, as shown in FIG. 4, the second zone 106 defines a bendable region 108. The circuit 12 is located in the bendable region 108 and includes a second metal layer 125. The second metal layer 125 may be deposited on the first metal layer 124 by an electroplating process. Circuit 12 located at the end of second zone 106 is used to connect an external power source (not shown in Figure 1).

於一具體實施例中,第二金屬層125可以是由Cu、Ni、Ag、Au、Sn等所形成。 In a specific embodiment, the second metal layer 125 may be formed of Cu, Ni, Ag, Au, Sn, or the like.

請參閱圖5、圖6、圖7、圖8及圖9,該等圖式示意地描繪本發明之第二較佳具體實施例之可撓式發光裝置2。圖5以頂視圖示意地繪示本發明之第二較佳具體實施例的可撓式發光裝置2。圖6係本發明之第二較佳具體實施例之可撓式發光裝置2之一必要元件-高分子基材20-的頂式圖。圖7及圖8分別係圖5中可撓式發光裝置2沿D-D線的剖面視圖。圖9係圖5中可撓式發光裝置2沿E-E線的剖面視圖。本發明之第二較佳具體實施例的可撓式發光裝置2可以做為發光鍵盤內的背光源,但並不以此為限。 Please refer to FIG. 5, FIG. 6, FIG. 7, FIG. 8, and FIG. 9, which schematically depict the flexible light-emitting device 2 of the second preferred embodiment of the present invention. Figure 5 is a top plan view schematically showing a flexible light-emitting device 2 of a second preferred embodiment of the present invention. Figure 6 is a top plan view of an essential component of the flexible light-emitting device 2 of the second preferred embodiment of the present invention - a polymer substrate 20 -. 7 and 8 are cross-sectional views of the flexible light-emitting device 2 of FIG. 5 taken along line D-D, respectively. Figure 9 is a cross-sectional view of the flexible light-emitting device 2 of Figure 5 taken along line E-E. The flexible light-emitting device 2 of the second preferred embodiment of the present invention can be used as a backlight in the illuminated keyboard, but is not limited thereto.

如圖5所示,本發明之第二較佳具體實施例之可撓式發光裝置2包含高分子基材20、電路22、至少一個發光二極體裸晶(24a、24b、24c)以及至少一個保護蓋(26a、26b、26c)。於圖3中,僅繪示三個發光二極體裸晶(24a、24b、24c)以及三個保護蓋(26a、26b、26c)做為代表。 As shown in FIG. 5, the flexible light-emitting device 2 of the second preferred embodiment of the present invention comprises a polymer substrate 20, a circuit 22, at least one LED dipole (24a, 24b, 24c) and at least A protective cover (26a, 26b, 26c). In FIG. 3, only three LED dipoles (24a, 24b, 24c) and three protective covers (26a, 26b, 26c) are shown as representative.

如圖6所示,高分子基材20其上定義沉積區域202。高分子基材20具有第一區204以及第二區206。 As shown in FIG. 6, the polymer substrate 20 defines a deposition region 202 thereon. The polymer substrate 20 has a first region 204 and a second region 206.

如圖7所示,電路22包含化學鍍催化油墨層222以及第一金屬層224。化學鍍催化油墨層222係被覆於高分子基材20的沉積區域202上。第一金屬層224係藉由化學鍍製程沉積於化學鍍催化油墨層222上。 As shown in FIG. 7, circuit 22 includes an electroless plating catalytic ink layer 222 and a first metal layer 224. The electroless plating catalyst ink layer 222 is coated on the deposition region 202 of the polymer substrate 20. The first metal layer 224 is deposited on the electroless plating catalyst ink layer 222 by an electroless plating process.

如圖7所示,電路22包含至少一對引腳(226a、 226b、226c、226d、226e、226f)。於圖3中,僅繪示三對引腳(226a、226b、226c、226d、226e、226f)做為代表。至少一對引腳(226a、226b、226c、226d、226e、226f)係位於高分子基材20的第一區204上。每一個發光二極體裸晶(24a、24b、24c)對應至少一對引腳(226a、226b、226c、226d、226e、226f)中之一對引腳(226a、226b、226c、226d、226e、226f),並且包含一對焊墊(242a、242b、242c、242d、242e、242f)。於圖3中,發光二極體裸晶24a包含一對焊墊(242a、242b)且對應一對引腳(226a、226b),發光二極體裸晶24b包含一對焊墊(242c、242d)且對應一對引腳(226c、226d),發光二極體裸晶24c包含一對焊墊(242e、242f)且對應一對引腳(226e、226f)。 As shown in Figure 7, circuit 22 includes at least one pair of pins (226a, 226b, 226c, 226d, 226e, 226f). In FIG. 3, only three pairs of pins (226a, 226b, 226c, 226d, 226e, 226f) are shown as representative. At least one pair of pins (226a, 226b, 226c, 226d, 226e, 226f) are located on the first region 204 of the polymeric substrate 20. Each of the light emitting diodes (24a, 24b, 24c) corresponds to one of the pair of pins (226a, 226b, 226c, 226d, 226e, 226f) (226a, 226b, 226c, 226d, 226e) , 226f), and includes a pair of pads (242a, 242b, 242c, 242d, 242e, 242f). In FIG. 3, the LED die 24a includes a pair of pads (242a, 242b) and corresponding to a pair of pins (226a, 226b), and the LED die 24b includes a pair of pads (242c, 242d). And corresponding to a pair of pins (226c, 226d), the LED die 24c includes a pair of pads (242e, 242f) and corresponding to a pair of pins (226e, 226f).

如圖7所示,每一個發光二極體裸晶(24a、24b、24c)係固定在高分子基材20上,並且其該對焊墊(242a、242b、242c、242d、242e、242f)與其對應的該對引腳(226a、226b、226c、226d、226e、226f)形成電性連接。例如,如圖7所示,每一個發光二極體裸晶(24a、24b、24c)的該對焊墊(242a、242b、242c、242d、242e、242f)係以表面黏著(surface mount)方式與該對引腳(226a、226b、226c、226d、226e、226f)形成電性連接。再者,如圖8所示,每一個發光二極體裸晶(24a、24b、24c)的該對焊墊(242a、242b、242c、242d、242e、242f)係以打線接合(wire bonding)方式與該對引腳(226a、226b、226c、226d、226e、226f)形成電性連接。圖8中具有與圖7中相同號碼標記之元件,有相同或類似的結構以及功能,在此不多做贅述。 As shown in FIG. 7, each of the LED dipoles (24a, 24b, 24c) is fixed on the polymer substrate 20, and the pair of pads (242a, 242b, 242c, 242d, 242e, 242f) The pair of pins (226a, 226b, 226c, 226d, 226e, 226f) corresponding thereto form an electrical connection. For example, as shown in FIG. 7, the pair of pads (242a, 242b, 242c, 242d, 242e, 242f) of each of the LEDs (24a, 24b, 24c) are surface mount. Electrically connected to the pair of pins (226a, 226b, 226c, 226d, 226e, 226f). Furthermore, as shown in FIG. 8, the pair of pads (242a, 242b, 242c, 242d, 242e, 242f) of each of the LED diodes (24a, 24b, 24c) are wire bonded. The method is electrically connected to the pair of pins (226a, 226b, 226c, 226d, 226e, 226f). The components in FIG. 8 having the same reference numerals as those in FIG. 7 have the same or similar structures and functions, and will not be further described herein.

如圖5、圖7、圖8所示,每一個保護蓋(26a、26b、26c)對應一個發光二極體裸晶(24a、24b、24c)。於圖5、圖7、圖8中,保護蓋26a對應發光二極體裸晶24a,保護蓋26b對應發光二極體裸晶24b,保護蓋26c對應發光二極體裸晶24c。每一個保護蓋(26a、26b、26c)係形成以覆蓋其對應的 發光二極體裸晶(24a、24b、24c)。 As shown in FIG. 5, FIG. 7, and FIG. 8, each of the protective covers (26a, 26b, 26c) corresponds to one of the light emitting diodes (24a, 24b, 24c). In FIG. 5, FIG. 7, and FIG. 8, the protective cover 26a corresponds to the LED bare crystal 24a, the protective cover 26b corresponds to the LED dipole 24b, and the protective cover 26c corresponds to the LED dipole 24c. Each protective cover (26a, 26b, 26c) is formed to cover its corresponding Light-emitting diode bare crystals (24a, 24b, 24c).

於一具體實施例中,每一個保護蓋(26a、26b、26c)摻入均勻分布的多顆螢光粉顆粒。藉此,發光二極體裸晶(24a、24b、24c)發射射光照射多顆螢光粉顆粒,經多顆螢光粉顆粒降頻轉換成另一色光。 In one embodiment, each of the protective covers (26a, 26b, 26c) incorporates a plurality of uniformly distributed phosphor particles. Thereby, the LED diodes (24a, 24b, 24c) emit light to illuminate the plurality of phosphor particles, and the plurality of phosphor particles are down-converted into another color.

形成高分子基材20的材料與形成高分子基材10的材料相同,在此不多做贅述。 The material for forming the polymer substrate 20 is the same as the material for forming the polymer substrate 10, and will not be described here.

形成第一金屬層224的材料、結構與形成第一金屬層124的材料、結構相同,在此不多做贅述。 The material and structure of the first metal layer 224 are the same as those of the first metal layer 124, and will not be described here.

進一步,如圖9所示,第二區206定義能彎折區域208。位在能彎折區域208的電路22並且包含第二金屬層225。第二金屬層225可以藉由電鍍製程沉積於第一金屬層224上。位在第二區206的末端上的電路22用以連接外部電源(未繪示於圖5中)。 Further, as shown in FIG. 9, the second zone 206 defines a bendable region 208. The circuit 22 is located in the bendable region 208 and includes a second metal layer 225. The second metal layer 225 may be deposited on the first metal layer 224 by an electroplating process. Circuitry 22 located at the end of second zone 206 is used to connect an external power source (not shown in Figure 5).

於一具體實施例中,第二金屬層225可以是由Cu、Ni、Ag、Au、Sn等所形成。 In a specific embodiment, the second metal layer 225 may be formed of Cu, Ni, Ag, Au, Sn, or the like.

根據本發明之第三較佳具體實施例之方法係製造如圖1、圖3所示之可撓式發光裝置1。根據本發明之第三較佳具體實施例之方法首先製備高分子基材10,其中高分子基材10其上定義沉積區域102,高分子基材10具有第一區104以及第二區106。 The method according to the third preferred embodiment of the present invention is to manufacture the flexible light-emitting device 1 as shown in Figs. According to the method of the third preferred embodiment of the present invention, the polymer substrate 10 is first prepared, wherein the polymer substrate 10 defines a deposition region 102 thereon, and the polymer substrate 10 has a first region 104 and a second region 106.

接著,根據本發明之第三較佳具體實施例之方法於高分子基材10的沉積區域102上,被覆化學鍍催化油墨層122。 Next, the electroless plating catalyst layer 122 is coated on the deposition region 102 of the polymer substrate 10 in accordance with the method of the third preferred embodiment of the present invention.

接著,根據本發明之第三較佳具體實施例之方法對高分子基材10執行化學鍍製程,進而於化學鍍催化油墨層122上沉積金屬層124,其中化學鍍催化油墨層122與金屬層 124構成電路12。電路12包含至少一對引腳(126a、126b、126c、126d、126e、126f)。於圖1中,僅繪示三對引腳(126a、126b、126c、126d、126e、126f)做為代表。至少一對引腳(126a、126b、126c、126d、126e、126f)係位於高分子基材的第一區上。 Next, an electroless plating process is performed on the polymer substrate 10 according to the method of the third preferred embodiment of the present invention, and then a metal layer 124 is deposited on the electroless plating catalyst layer 122, wherein the electroless plating catalyst layer 122 and the metal layer are electrolessly plated. 124 constitutes circuit 12. Circuit 12 includes at least one pair of pins (126a, 126b, 126c, 126d, 126e, 126f). In FIG. 1, only three pairs of pins (126a, 126b, 126c, 126d, 126e, 126f) are shown as representative. At least one pair of pins (126a, 126b, 126c, 126d, 126e, 126f) are located on the first region of the polymeric substrate.

最後,根據本發明之第三較佳具體實施例之方法將至少一個已封裝的發光二極體元件(14a、14b、14c)固定在高分子基材上。於圖1中,僅繪示三個已封裝的發光二極體元件(14a、14b、14c)做為代表。每一個已封裝的發光二極體(14a、14b、14c)元件對應該至少一對引腳(126a、126b、126c、126d、126e、126f)中之一對引腳(126a、126b、126c、126d、126e、126f),並且包含一對接腳(142a、142b、142c、142d、142e、142f)。於圖1中,已封裝的發光二極體元件14a包含一對接腳(142a、142b)且對應一對引腳(126a、126b),已封裝的發光二極體元件14b包含一對接腳(142c、142d)且對應一對引腳(126c、126d),已封裝的發光二極體元件14c包含一對接腳(142e、142f)且對應一對引腳(126e、126f)。每一個已封裝的發光二極體元件(14a、14b、14c)其該對接腳(142a、142b、142c、142d、142e、142f)與其對應的該對引腳(126a、126b、126c、126d、126e、126f)係形成電性連接。 Finally, at least one packaged light-emitting diode element (14a, 14b, 14c) is attached to the polymeric substrate in accordance with the method of the third preferred embodiment of the present invention. In Fig. 1, only three packaged light emitting diode elements (14a, 14b, 14c) are shown as representative. Each packaged light-emitting diode (14a, 14b, 14c) component corresponds to at least one of a pair of pins (126a, 126b, 126c, 126d, 126e, 126f) (126a, 126b, 126c, 126d, 126e, 126f) and includes a pair of pins (142a, 142b, 142c, 142d, 142e, 142f). In FIG. 1, the packaged LED component 14a includes a pair of pins (142a, 142b) and corresponds to a pair of pins (126a, 126b). The packaged LED component 14b includes a pair of pins (142c). 142d) and corresponding to a pair of pins (126c, 126d), the packaged LED component 14c includes a pair of pins (142e, 142f) and corresponds to a pair of pins (126e, 126f). Each of the packaged LED components (14a, 14b, 14c) has its pair of pins (142a, 142b, 142c, 142d, 142e, 142f) corresponding to the pair of pins (126a, 126b, 126c, 126d, 126e, 126f) form an electrical connection.

請參閱圖10、圖11及圖12,該等圖式示意地描繪本發明之第一較佳具體實施例之可撓式發光裝置1其高分子基材10的第二區域106上電路12執行電鍍製程之各階段的結構。 Referring to FIG. 10, FIG. 11, and FIG. 12, the drawings schematically depict a flexible light-emitting device 1 of a first preferred embodiment of the present invention, wherein the circuit 12 is executed on the second region 106 of the polymer substrate 10. The structure of each stage of the electroplating process.

進一步,如圖10所示,高分子基材10的第二區106定義能彎折區域108。電路12包含位在彎折區域108上之覆蓋區塊127以及一對輔助線路(128a、128b)。該對輔助線路(128a、128b)分別電連接至覆蓋區塊127。根據本發明之第三較佳具體實施例之方法並且在對高分子基材10執行化學鍍 製程之步驟與將至少一個已封裝的發光二極體元件(14a、14b、14c)固定在高分子基材10上之步驟之間,先藉由該對輔助線路(128a、128b)對覆蓋區塊127執行電鍍製程,進而於覆蓋區塊127上沉積第二金屬層125,電鍍製程執行後之結構如圖11所示。接著,藉由雷射雕刻等,移除已沉積第二金屬層125的部分覆蓋區塊127。覆蓋區塊127的保留部分即形成多條主線路(129a、129b),移除部分覆蓋區塊127後之結構如圖12所示。於圖12中,僅繪示兩條主線路(129a、129b)做為代表。位在高分子基材10的第二區106的末端上之電路12用以連接外部電源(未繪示於圖1中)。移除部分覆蓋區塊127的過程中,對輔助線路(128a、128b)與覆蓋區塊127的連接部分可以移並移除,也可以保留,但須確保該等主線路(129a、129b)之間並未連接。 Further, as shown in FIG. 10, the second region 106 of the polymer substrate 10 defines a bendable region 108. Circuit 12 includes a footprint 127 located on bend region 108 and a pair of auxiliary lines (128a, 128b). The pair of auxiliary lines (128a, 128b) are electrically connected to the coverage block 127, respectively. According to the method of the third preferred embodiment of the present invention and performing electroless plating on the polymer substrate 10 The steps of the process and the step of fixing at least one packaged LED component (14a, 14b, 14c) on the polymer substrate 10 are first covered by the pair of auxiliary lines (128a, 128b) The block 127 performs an electroplating process to deposit a second metal layer 125 on the capping block 127. The structure after the electroplating process is performed is as shown in FIG. Next, a portion of the cover block 127 where the second metal layer 125 has been deposited is removed by laser engraving or the like. The reserved portion of the cover block 127 forms a plurality of main lines (129a, 129b), and the structure after the partial cover block 127 is removed is as shown in FIG. In Fig. 12, only two main lines (129a, 129b) are shown as representative. The circuit 12 on the end of the second region 106 of the polymer substrate 10 is used to connect an external power source (not shown in FIG. 1). In the process of removing part of the coverage block 127, the connection portion of the auxiliary line (128a, 128b) and the coverage block 127 may be moved and removed, or may be retained, but the main lines (129a, 129b) must be secured. Not connected.

請參閱圖13及圖14,該等圖式示意地描繪本發明之圖1中可撓式發光裝置1沿C-C線的剖面之局部結構且安置於電鍍槽30內執行電鍍製程之各階段的結構。 Referring to FIG. 13 and FIG. 14 , the drawings schematically depict the structure of the partial structure of the flexible light-emitting device 1 of FIG. 1 along the CC line of the present invention and are disposed in the plating bath 30 to perform various stages of the electroplating process. .

進一步,高分子基材10的第二區106定義能彎折區域108。如圖13所示,電鍍槽3內承裝電解液34。根據本發明之第三較佳具體實施例之方法並且在對高分子基材10執行化學鍍製程之步驟與將至少一個已封裝的發光二極體元件(14a、14b、14c)固定在高分子基材10上之步驟之間,先對除了位在能彎折區域108上的電路12之其他部分被覆絕緣層36,將具有電路12的高分子基材10置入電解槽30中,浸入電解液34,將正電極32a接在能彎折區域108上的電路12之一端,將負電極32b接在能彎折區域108上的電路12之另一端。接著,根據本發明之第三較佳具體實施例之方法執行電鍍製程,進而於位在能彎折區域108之第一金屬層124上沉積第二金屬層125,如圖14所示。接著,根據本發明之第三較佳具體實施例之方法移除絕緣層36,即獲得如圖4所示之 結構。位在高分子基材10的第二區106的末端上之電路12用以連接外部電源(未繪示於圖1中)。 Further, the second region 106 of the polymer substrate 10 defines a bendable region 108. As shown in FIG. 13, the electrolytic solution 34 is housed in the plating tank 3. According to the method of the third preferred embodiment of the present invention and the step of performing an electroless plating process on the polymer substrate 10 and fixing at least one packaged light emitting diode element (14a, 14b, 14c) to the polymer Between the steps on the substrate 10, the insulating layer 36 is coated on the other portion of the circuit 12 except for the bendable region 108, and the polymer substrate 10 having the circuit 12 is placed in the electrolytic cell 30 and immersed in the electrolysis. The liquid 34 connects the positive electrode 32a to one end of the circuit 12 on the bendable region 108 and the negative electrode 32b to the other end of the circuit 12 on the bendable region 108. Next, an electroplating process is performed in accordance with the method of the third preferred embodiment of the present invention to deposit a second metal layer 125 on the first metal layer 124 of the bendable region 108, as shown in FIG. Next, the insulating layer 36 is removed according to the method of the third preferred embodiment of the present invention, that is, as shown in FIG. structure. The circuit 12 on the end of the second region 106 of the polymer substrate 10 is used to connect an external power source (not shown in FIG. 1).

根據本發明之第四較佳具體實施例之方法係製造如圖5、圖7及圖8所示之可撓式發光裝置2。根據本發明之第四較佳具體實施例之方法首先製備高分子基材20,其中高分子基材20其上定義沉積區域202,高分子基材20具有第一區204以及第二區206。 The flexible light-emitting device 2 shown in Figs. 5, 7 and 8 is manufactured according to the method of the fourth preferred embodiment of the present invention. According to the method of the fourth preferred embodiment of the present invention, a polymer substrate 20 is first prepared, wherein the polymer substrate 20 defines a deposition region 202 thereon, and the polymer substrate 20 has a first region 204 and a second region 206.

接著,根據本發明之第四較佳具體實施例之方法於高分子基材20的沉積區域202上,被覆化學鍍催化油墨層222。 Next, the electroless plating catalytic ink layer 222 is coated on the deposition region 202 of the polymer substrate 20 according to the method of the fourth preferred embodiment of the present invention.

接著,根據本發明之第四較佳具體實施例之方法對高分子基材20執行化學鍍製程,進而於化學鍍催化油墨層222上沉積金屬層224,其中化學鍍催化油墨層222與金屬層224構成電路22。電路22包含至少一對引腳(226a、226b、226c、226d、226e、226f)。於圖3中,僅繪示三對引腳(226a、226b、226c、226d、226e、226f)做為代表。至少一對引腳(226a、226b、226c、226d、226e、226f)係位於高分子基材20的第一區204上。 Next, an electroless plating process is performed on the polymer substrate 20 according to the method of the fourth preferred embodiment of the present invention, and a metal layer 224 is deposited on the electroless plating catalyst ink layer 222, wherein the electroless plating catalyst layer 222 and the metal layer are deposited. 224 constitutes circuit 22. Circuit 22 includes at least one pair of pins (226a, 226b, 226c, 226d, 226e, 226f). In FIG. 3, only three pairs of pins (226a, 226b, 226c, 226d, 226e, 226f) are shown as representative. At least one pair of pins (226a, 226b, 226c, 226d, 226e, 226f) are located on the first region 204 of the polymeric substrate 20.

接著,根據本發明之第四較佳具體實施例之方法將至少一個發光二極體裸晶(24a、24b、24c)固定在高分子基材20上。於圖3中,僅繪示三個發光二極體裸晶(24a、24b、24c)以及三個保護蓋(26a、26b、26c)做為代表。每一個發光二極體裸晶(24a、24b、24c)對應至少一對引腳(226a、226b、226c、226d、226e、226f)中之一對引腳(226a、226b、226c、226d、226e、226f),並且包含一對焊墊(242a、242b、242c、242d、242e、242f)。於圖3中,發光二極體裸晶24a包含一對焊墊(242a、242b)且對應一對引腳(226a、226b),發光二極體裸晶24b包含一對焊墊(242c、242d)且對應一對引腳(226c、 226d),發光二極體裸晶24c包含一對焊墊(242e、242f)且對應一對引腳(226e、226f)。每一個發光二極體裸晶(24a、24b、24c)其該對焊墊(242a、242b、242c、242d、242e、242f)與其對應的該對引腳(226a、226b、226c、226d、226e、226f)係形成電性連接。 Next, at least one of the light emitting diode bare crystals (24a, 24b, 24c) is fixed on the polymer substrate 20 in accordance with the method of the fourth preferred embodiment of the present invention. In FIG. 3, only three LED dipoles (24a, 24b, 24c) and three protective covers (26a, 26b, 26c) are shown as representative. Each of the light emitting diodes (24a, 24b, 24c) corresponds to one of the pair of pins (226a, 226b, 226c, 226d, 226e, 226f) (226a, 226b, 226c, 226d, 226e) , 226f), and includes a pair of pads (242a, 242b, 242c, 242d, 242e, 242f). In FIG. 3, the LED die 24a includes a pair of pads (242a, 242b) and corresponding to a pair of pins (226a, 226b), and the LED die 24b includes a pair of pads (242c, 242d). And corresponding to a pair of pins (226c, 226d), the LED die 24c includes a pair of pads (242e, 242f) and corresponds to a pair of pins (226e, 226f). Each of the light-emitting diodes (24a, 24b, 24c) has the pair of pads (242a, 242b, 242c, 242d, 242e, 242f) corresponding to the pair of pins (226a, 226b, 226c, 226d, 226e) , 226f) forms an electrical connection.

最後,根據本發明之第四較佳具體實施例之方法形成至少一個保護蓋(26a、26b、26c)。於圖3中,僅繪示三個保護蓋(26a、26b、26c)做為代表。每一個保護蓋(26a、26b、26c)對應一個發光二極體裸晶(24a、24b、24c)。於圖3中,保護蓋26a對應發光二極體裸晶24a,保護蓋26b對應發光二極體裸晶24b,保護蓋26c對應發光二極體裸晶24c。每一個保護蓋(26a、26b、26c)係形成以覆蓋其對應的發光二極體裸晶(24a、24b、24c)。 Finally, at least one protective cover (26a, 26b, 26c) is formed in accordance with the method of the fourth preferred embodiment of the present invention. In Fig. 3, only three protective covers (26a, 26b, 26c) are shown as representative. Each of the protective covers (26a, 26b, 26c) corresponds to one of the light emitting diodes (24a, 24b, 24c). In FIG. 3, the protective cover 26a corresponds to the LED bare die 24a, the protective cover 26b corresponds to the LED dipole 24b, and the protective cover 26c corresponds to the LED dipole 24c. Each of the protective covers (26a, 26b, 26c) is formed to cover its corresponding light emitting diode die (24a, 24b, 24c).

進一步,高分子基材20的第二區206定義能彎折區域208。於位在能彎折區域208之第一金屬層224上沉積第二金屬層225的製程同上文已描述對位在能彎折區域108之第一金屬層124上沉積第二金屬層125的製程,在此不多做贅述。 Further, the second region 206 of the polymeric substrate 20 defines a bendable region 208. The process of depositing the second metal layer 225 on the first metal layer 224 of the bendable region 208 is the same as the process of depositing the second metal layer 125 on the first metal layer 124 of the bendable region 108 as described above. I will not repeat them here.

藉由以上對本發明之詳述,本發明之可撓式發光裝置具有良好品質的導線及耐彎折的彎折區域。進一步,本發明之可撓式發光裝置採用發光二極體裸晶而非已封裝的發光二極體元件,藉此,本發明之可撓式發光裝置的厚度減薄。並且,本發明之可撓式發光裝置的製造方法的成本低廉。 By the above detailed description of the present invention, the flexible light-emitting device of the present invention has a good quality wire and a bend-resistant bending region. Further, the flexible light-emitting device of the present invention employs a light-emitting diode bare crystal instead of a packaged light-emitting diode element, whereby the thickness of the flexible light-emitting device of the present invention is reduced. Further, the method of manufacturing the flexible light-emitting device of the present invention is inexpensive.

藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之面向加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的面向內。因此,本發明所申請之專利範圍的面向 應該根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。 The features and spirit of the present invention are intended to be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents that are within the scope of the invention as claimed. Therefore, the scope of the patent scope of the invention claimed The broadest interpretation should be made in light of the above description so that it covers all possible changes and equivalence arrangements.

Claims (20)

一種可撓式發光裝置,包含:一高分子基材,其上定義一沉積區域,該高分子基材具有一第一區以及一第二區;一電路,包含一化學鍍催化油墨層以及一第一金屬層,該化學鍍催化油墨層係被覆於該高分子基材之該沉積區域上,該第一金屬層係藉由一化學鍍製程沉積於該化學鍍催化油墨層上,該電路包含至少一對引腳,該至少一對引腳係位於該第一區上;以及至少一個已封裝的發光二極體元件,每一個已封裝的發光二極體元件對應該至少一對引腳中之一對引腳並且包含一對接腳,每一個已封裝的發光二極體元件係固定在該高分子基材上且其該對接腳與其對應的該對引腳形成電性連接,其中該第二區定義一能彎折區域,位在該能彎折區域之該電路並且包含一第二金屬層,該第二金屬層係藉由一電鍍製程沉積於該第一金屬層上,位在該第二區之一末端上之該電路用以連接一外部電源。 A flexible light-emitting device comprising: a polymer substrate defining a deposition region thereon, the polymer substrate having a first region and a second region; a circuit comprising an electroless plating catalytic ink layer and a a first metal layer, the electroless plating catalyst layer is coated on the deposition region of the polymer substrate, and the first metal layer is deposited on the electroless plating catalyst layer by an electroless plating process, the circuit comprising At least one pair of pins, the at least one pair of pins being located on the first region; and at least one packaged light emitting diode element, each packaged light emitting diode element corresponding to at least one pair of pins a pair of pins and comprising a pair of pins, each of the packaged LED components being fixed on the polymer substrate and having the pair of pins electrically connected to the corresponding pair of pins, wherein the pair The second region defines a bendable region, the circuit located in the bendable region and includes a second metal layer deposited on the first metal layer by an electroplating process. One end of the second zone The circuit for connection of an external power source. 如請求項1所述之可撓式發光裝置,其中該高分子基材係由選自由聚對苯二甲酸乙二酯、聚醯亞胺、聚酸甲酯以及聚甲基丙烯酸甲酯所組成之群組中之其一所形成。 The flexible light-emitting device according to claim 1, wherein the polymer substrate is composed of selected from the group consisting of polyethylene terephthalate, polyimine, polymethyl methacrylate and polymethyl methacrylate. One of the groups is formed. 如請求項1所述之可撓式發光裝置,其中該第一金屬層係選自由單層Cu層、多層Ag/Au層/多層Ag/Au/Sn/Ni層/單層Cu層、單層Sn層/單層Cu層、單層Ag層/單層Cu層、單層Au層/單層Cu層、單層Ag層/單層Ni層/單層Cu層、單層Au層/單 層Ni層/單層Cu層以及單層Sn層/單層Au層/單層Ag層/單層Ni層/單層Cu層所組成之群組中之其一。 The flexible light-emitting device of claim 1, wherein the first metal layer is selected from the group consisting of a single layer of Cu layer, a plurality of layers of Ag/Au layer/multilayer Ag/Au/Sn/Ni layer/single layer of Cu layer, and a single layer. Sn layer / single layer Cu layer, single layer Ag layer / single layer Cu layer, single layer Au layer / single layer Cu layer, single layer Ag layer / single layer Ni layer / single layer Cu layer, single layer Au layer / single One of a group consisting of a Ni layer/single layer Cu layer and a single layer Sn layer/single layer Au layer/single layer Ag layer/single layer Ni layer/single layer Cu layer. 一種可撓式發光裝置,包含:一高分子基材,其上定義一沉積區域,該高分子基材具有一第一區以及一第二區;一電路,包含一化學鍍催化油墨層以及一第一金屬層,該化學鍍催化油墨層係被覆於該高分子基材之該沉積區域上,該第一金屬層係藉由一化學鍍製程沉積於該化學鍍催化油墨層上,該電路包含至少一對引腳,該至少一對引腳係位於該第一區上;至少一個發光二極體裸晶,每一個發光二極體裸晶對應該至少一對引腳中之一對引腳並且包含一對焊墊,每一個發光二極體裸晶係固定在該高分子基材上且其該對焊墊與其對應的該對引腳形成電性連接;以及至少一個保護蓋,每一個保護蓋對應一個發光二極體裸晶,每一個保護蓋係形成以覆蓋其對應的發光二極體裸晶,其中該第二區定義一能彎折區域,位在該能彎折區域之該電路並且包含一第二金屬層,該第二金屬層係藉由一電鍍製程沉積於該第一金屬層上,位在該第二區之一末端上之該電路用以連接一外部電源。 A flexible light-emitting device comprising: a polymer substrate defining a deposition region thereon, the polymer substrate having a first region and a second region; a circuit comprising an electroless plating catalytic ink layer and a a first metal layer, the electroless plating catalyst layer is coated on the deposition region of the polymer substrate, and the first metal layer is deposited on the electroless plating catalyst layer by an electroless plating process, the circuit comprising At least one pair of pins, the at least one pair of pins are located on the first region; at least one of the LEDs is bare, and each of the LEDs is corresponding to at least one of the pair of pins And comprising a pair of solder pads, each of the light emitting diodes being fixed on the polymer substrate and having the pair of pads electrically connected to the corresponding pair of pins; and at least one protective cover, each The protective cover corresponds to one of the light emitting diode bare crystals, and each protective cover is formed to cover the corresponding light emitting diode bare crystal, wherein the second area defines a bendable region, and the bent region is located in the bendable region Circuit and contains a second gold Layer, the second metal layer by an electroplating process based on the first deposited metal layer, the circuit is one bit on the end of the second zone for connecting to an external power source. 如請求項4所述之可撓式發光裝置,其中該高分子基材係由選自由聚對苯二甲酸乙二酯、聚醯亞胺、聚酸甲酯以及聚甲基丙烯酸甲酯所組成之群組中之其一所形成。 The flexible light-emitting device according to claim 4, wherein the polymer substrate is composed of selected from the group consisting of polyethylene terephthalate, polyimine, polymethyl methacrylate and polymethyl methacrylate. One of the groups is formed. 如請求項4所述之可撓式發光裝置,其中該第一金屬層係選 自由單層Cu層、多層Ag/Au層/多層Ag/Au/Sn/Ni層/單層Cu層、單層Sn層/單層Cu層、單層Ag層/單層Cu層、單層Au層/單層Cu層、單層Ag層/單層Ni層/單層Cu層、單層Au層/單層Ni層/單層Cu層以及單層Sn層/單層Au層/單層Ag層/單層Ni層/單層Cu層所組成之群組中之其一。 The flexible light-emitting device of claim 4, wherein the first metal layer is selected Free single-layer Cu layer, multi-layer Ag/Au layer/multilayer Ag/Au/Sn/Ni layer/single-layer Cu layer, single-layer Sn layer/single-layer Cu layer, single-layer Ag layer/single-layer Cu layer, single-layer Au Layer/single layer Cu layer, single layer Ag layer/single layer Ni layer/single layer Cu layer, single layer Au layer/single layer Ni layer/single layer Cu layer, and single layer Sn layer/single layer Au layer/single layer Ag One of a group consisting of a layer/single layer of Ni/single layer of Cu. 如請求項4所述之可撓式發光裝置,其中每一個保護蓋摻入均勻分布之多顆螢光粉顆粒。 The flexible light-emitting device of claim 4, wherein each of the protective covers incorporates a plurality of uniformly distributed phosphor particles. 一種製造一可撓式發光裝置之方法,包含下列步驟:(a)製備一高分子基材,其中該高分子基材其上定義一沉積區域,該高分子基材具有一第一區以及一第二區;(b)於該高分子基材之該沉積區域上,被覆一化學鍍催化油墨層;(c)對該高分子基材執行一化學鍍製程,進而於該化學鍍催化油墨層上沉積一金屬層,其中該化學鍍催化油墨層與該金屬層構成一電路,該電路包含至少一對引腳,該至少一對引腳係位於該第一區上,該第二區定義一能彎折區域,該電路包含位在該彎折區域上之一覆蓋區塊以及一對輔助線路,該對輔助線路分別電連接至該覆蓋區塊;(d)藉由該對輔助線路對該覆蓋區塊執行一電鍍製程,進而於該覆蓋區塊上沉積一第二金屬層;(e)移除該已沉積該第二金屬層之該覆蓋區塊之一部分,以形成多條主線路,其中位在該第二區之一末端上之該電路用以連接一外部電源;以及 (f)將至少一個已封裝的發光二極體元件固定在該高分子基材上,其中每一個已封裝的發光二極體元件對應該至少一對引腳中之一對引腳並且包含一對接腳,每一個已封裝的發光二極體元件其該對接腳與其對應的該對引腳係形成電性連接。 A method of manufacturing a flexible light-emitting device, comprising the steps of: (a) preparing a polymer substrate, wherein the polymer substrate defines a deposition region thereon, the polymer substrate having a first region and a a second region; (b) coating an electroless plating catalyst layer on the deposition region of the polymer substrate; (c) performing an electroless plating process on the polymer substrate, and further performing the electroless plating catalyst layer Depositing a metal layer thereon, wherein the electroless plating catalytic ink layer and the metal layer form a circuit, the circuit comprising at least one pair of pins, the at least one pair of pins are located on the first region, and the second region defines a a bendable region, the circuit comprising a cover block located on the bend region and a pair of auxiliary lines, the pair of auxiliary lines being electrically connected to the cover block respectively; (d) performing an electroplating process on the capping block by the pair of auxiliary lines, thereby depositing a second metal layer on the capping block; (e) removing the capping region on which the second metal layer has been deposited a portion of the block to form a plurality of main lines, wherein the circuit at one end of the second region is for connecting an external power source; and (f) securing at least one packaged light emitting diode element On the polymer substrate, each of the packaged LED components corresponds to at least one of the pair of pins and includes a pair of pins, each of the packaged LED components having the pair of pins The pair of pins corresponding thereto form an electrical connection. 如請求項8所述之方法,其中該高分子基材係由選自由聚對苯二甲酸乙二酯、聚醯亞胺、聚酸甲酯以及聚甲基丙烯酸甲酯所組成之群組中之其一所形成。 The method of claim 8, wherein the polymer substrate is selected from the group consisting of polyethylene terephthalate, polyimide, polymethyl methacrylate, and polymethyl methacrylate. One of them is formed. 如請求項8所述之方法,其中該第一金屬層係選自由單層Cu層、多層Ag/Au層/多層Ag/Au/Sn/Ni層/單層Cu層、單層Sn層/單層Cu層、單層Ag層/單層Cu層、單層Au層/單層Cu層、單層Ag層/單層Ni層/單層Cu層、單層Au層/單層Ni層/單層Cu層以及單層Sn層/單層Au層/單層Ag層/單層Ni層/單層Cu層所組成之群組中之其一。 The method of claim 8, wherein the first metal layer is selected from the group consisting of a single layer of Cu layer, a plurality of layers of Ag/Au layer/multilayer Ag/Au/Sn/Ni layer/single layer of Cu layer, and a single layer of Sn layer/single Layer Cu layer, single layer Ag layer/single layer Cu layer, single layer Au layer/single layer Cu layer, single layer Ag layer/single layer Ni layer/single layer Cu layer, single layer Au layer/single layer Ni layer/single One of a group consisting of a layer of Cu layer and a single layer of Sn layer/single layer of Au layer/single layer of Ag layer/single layer of Ni layer/single layer of Cu layer. 一種製造一可撓式發光裝置之方法,包含下列步驟:(a)製備一高分子基材,其中該高分子基材其上定義一沉積區域,該高分子基材具有一第一區以及一第二區;(b)於該高分子基材之該沉積區域上,被覆一化學鍍催化油墨層;(c)對該高分子基材執行一化學鍍製程,進而於該化學鍍催化油墨層上沉積一金屬層,其中該化學鍍催化油墨層與該金屬層構成一電路,該電路包含至少一對引腳,該至少一對引腳係位於該第一區上,該第二區定義一能彎折區域; (d)對除了位在該能彎折區域上之該電路之其他部分被覆一絕緣層;(e)執行一電鍍製程,進而於位在該能彎折區域之該第一金屬層上沉積一第二金屬層;(f)移除該絕緣層,其中位在該第二區之一末端上之該電路用以連接一外部電源;以及(g)將至少一個已封裝的發光二極體元件固定在該高分子基材上,其中每一個已封裝的發光二極體元件對應該至少一對引腳中之一對引腳並且包含一對接腳,每一個已封裝的發光二極體元件其該對接腳與其對應的該對引腳係形成電性連接。 A method of manufacturing a flexible light-emitting device, comprising the steps of: (a) preparing a polymer substrate, wherein the polymer substrate defines a deposition region thereon, the polymer substrate having a first region and a a second region; (b) coating an electroless plating catalyst layer on the deposition region of the polymer substrate; (c) performing an electroless plating process on the polymer substrate, and further performing the electroless plating catalyst layer Depositing a metal layer thereon, wherein the electroless plating catalytic ink layer and the metal layer form a circuit, the circuit comprising at least one pair of pins, the at least one pair of pins are located on the first region, and the second region defines a Can bend the area; (d) coating an insulating layer on other portions of the circuit other than the bendable region; (e) performing an electroplating process to deposit a layer on the first metal layer of the bendable region a second metal layer; (f) removing the insulating layer, wherein the circuit at one end of the second region is used to connect an external power source; and (g) at least one packaged light emitting diode component Fixed on the polymer substrate, wherein each packaged LED component corresponds to at least one pair of pins and includes a pair of pins, each of which has a packaged LED component The pair of pins are electrically connected to the corresponding pair of pins. 如請求項11所述之方法,其中該高分子基材係由選自由聚對苯二甲酸乙二酯、聚醯亞胺、聚酸甲酯以及聚甲基丙烯酸甲酯所組成之群組中之其一所形成。 The method of claim 11, wherein the polymer substrate is selected from the group consisting of polyethylene terephthalate, polyimide, polymethyl methacrylate, and polymethyl methacrylate. One of them is formed. 如請求項11所述之方法,其中該第一金屬層係選自由單層Cu層、多層Ag/Au層/多層Ag/Au/Sn/Ni層/單層Cu層、單層Sn層/單層Cu層、單層Ag層/單層Cu層、單層Au層/單層Cu層、單層Ag層/單層Ni層/單層Cu層、單層Au層/單層Ni層/單層Cu層以及單層Sn層/單層Au層/單層Ag層/單層Ni層/單層Cu層所組成之群組中之其一。 The method of claim 11, wherein the first metal layer is selected from the group consisting of a single layer of Cu layer, a plurality of layers of Ag/Au layer/multilayer Ag/Au/Sn/Ni layer/single layer of Cu layer, and a single layer of Sn layer/single Layer Cu layer, single layer Ag layer/single layer Cu layer, single layer Au layer/single layer Cu layer, single layer Ag layer/single layer Ni layer/single layer Cu layer, single layer Au layer/single layer Ni layer/single One of a group consisting of a layer of Cu layer and a single layer of Sn layer/single layer of Au layer/single layer of Ag layer/single layer of Ni layer/single layer of Cu layer. 一種製造一可撓式發光裝置之方法,包含下列步驟:(a)製備一高分子基材,其中該高分子基材其上定義一沉積區域,該高分子基材具有一第一區以及一第二區; (b)於該高分子基材之該沉積區域上,被覆一化學鍍催化油墨層;(c)對該高分子基材執行一化學鍍製程,進而於該化學鍍催化油墨層上沉積一金屬層,其中該化學鍍催化油墨層與該金屬層構成一電路,該電路包含至少一對引腳,該至少一對引腳係位於該第一區上,該第二區定義一能彎折區域,該電路包含位在該彎折區域上之一覆蓋區塊以及一對輔助線路,該對輔助線路分別電連接至該覆蓋區塊;(d)藉由該對輔助線路對該覆蓋區塊執行一電鍍製程,進而於該覆蓋區塊上沉積一第二金屬層;(e)移除該已沉積該第二金屬層之該覆蓋區塊之一部分,以形成多條主線路,其中位在該第二區之一末端上之該電路用以連接一外部電源;(f)將至少一個發光二極體裸晶固定在該高分子基材上,其中每一個發光二極體裸晶對應該至少一對引腳中之一對引腳並且包含一對焊墊,每一個發光二極體裸晶其該對焊墊與其對應的該對引腳係形成電性連接;以及(g)形成至少一個保護蓋,其中每一個保護蓋對應一個發光二極體裸晶,每一個保護蓋係形成以覆蓋其對應的發光二極體裸晶。 A method of manufacturing a flexible light-emitting device, comprising the steps of: (a) preparing a polymer substrate, wherein the polymer substrate defines a deposition region thereon, the polymer substrate having a first region and a Second district; (b) coating an electroless plating catalyst layer on the deposition region of the polymer substrate; (c) performing an electroless plating process on the polymer substrate, and depositing a metal on the electroless plating catalyst layer a layer, wherein the electroless plating catalytic ink layer and the metal layer form a circuit, the circuit comprising at least one pair of pins, the at least one pair of pins being located on the first region, the second region defining a bendable region The circuit includes a coverage block located on the bend region and a pair of auxiliary lines respectively electrically connected to the coverage block; (d) performing the coverage block by the pair of auxiliary lines An electroplating process to deposit a second metal layer on the cover block; (e) removing a portion of the cover block from which the second metal layer has been deposited to form a plurality of main lines, wherein The circuit at one end of the second region is used to connect an external power source; (f) the at least one light emitting diode is barely fixed on the polymer substrate, wherein each of the light emitting diodes is at least One pair of pins and one pair of pins Each of the light emitting diodes has a pair of solder pads electrically connected to the corresponding pair of pins; and (g) at least one protective cover is formed, wherein each of the protective covers corresponds to one of the light emitting diodes Each protective cover is formed to cover its corresponding light emitting diode die. 如請求項14所述之方法,其中該高分子基材係由選自由聚對苯二甲酸乙二酯、聚醯亞胺、聚酸甲酯以及聚甲基丙烯酸甲酯所組成之群組中之其一所形成。 The method of claim 14, wherein the polymeric substrate is selected from the group consisting of polyethylene terephthalate, polyimide, polymethyl methacrylate, and polymethyl methacrylate. One of them is formed. 如請求項14所述之方法,其中該第一金屬層係選自由單層 Cu層、多層Ag/Au層/多層Ag/Au/Sn/Ni層/單層Cu層、單層Sn層/單層Cu層、單層Ag層/單層Cu層、單層Au層/單層Cu層、單層Ag層/單層Ni層/單層Cu層、單層Au層/單層Ni層/單層Cu層以及單層Sn層/單層Au層/單層Ag層/單層Ni層/單層Cu層所組成之群組中之其一。 The method of claim 14, wherein the first metal layer is selected from the group consisting of a single layer Cu layer, multilayer Ag/Au layer/multilayer Ag/Au/Sn/Ni layer/single layer Cu layer, single layer Sn layer/single layer Cu layer, single layer Ag layer/single layer Cu layer, single layer Au layer/single Layer Cu layer, single layer Ag layer/single layer Ni layer/single layer Cu layer, single layer Au layer/single layer Ni layer/single layer Cu layer, and single layer Sn layer/single layer Au layer/single layer Ag layer/single One of a group consisting of a layer of Ni/single layer of Cu. 如請求項14所述之方法,其中每一個保護蓋摻入均勻分布之多顆螢光粉顆粒。 The method of claim 14, wherein each of the protective covers incorporates a plurality of uniformly distributed phosphor particles. 一種製造一可撓式發光裝置之方法,包含下列步驟:(a)製備一高分子基材,其中該高分子基材其上定義一沉積區域,該高分子基材具有一第一區以及一第二區;(b)於該高分子基材之該沉積區域上,被覆一化學鍍催化油墨層;(c)對該高分子基材執行一化學鍍製程,進而於該化學鍍催化油墨層上沉積一金屬層,其中該化學鍍催化油墨層與該金屬層構成一電路,該電路包含至少一對引腳,該至少一對引腳係位於該第一區上,該第二區定義一能彎折區域;(d)對除了為在該能彎折區域上之該電路之其他部分被覆一絕緣層;(e)執行一電鍍製程,進而於位在該能彎折區域之該第一金屬層上沉積一第二金屬層;(f)移除該絕緣層,其中位在該第二區之一末端上之該電路用以連接一外部電源;(g)將至少一個發光二極體裸晶固定在該高分子基材上,其中每一個發光二極體裸晶對應該至少一對引腳中之一對 引腳並且包含一對焊墊,每一個發光二極體裸晶其該對焊墊與其對應的該對引腳係形成電性連接;以及(h)形成至少一個保護蓋,其中每一個保護蓋對應一個發光二極體裸晶,每一個保護蓋係形成以覆蓋其對應的發光二極體裸晶。 A method of manufacturing a flexible light-emitting device, comprising the steps of: (a) preparing a polymer substrate, wherein the polymer substrate defines a deposition region thereon, the polymer substrate having a first region and a a second region; (b) coating an electroless plating catalyst layer on the deposition region of the polymer substrate; (c) performing an electroless plating process on the polymer substrate, and further performing the electroless plating catalyst layer Depositing a metal layer thereon, wherein the electroless plating catalytic ink layer and the metal layer form a circuit, the circuit comprising at least one pair of pins, the at least one pair of pins are located on the first region, and the second region defines a a bendable region; (d) covering an insulating layer other than the other portion of the circuit on the bendable region; (e) performing an electroplating process, and thereby placing the first portion in the bendable region Depositing a second metal layer on the metal layer; (f) removing the insulating layer, wherein the circuit at one end of the second region is used to connect an external power source; (g) at least one light emitting diode The bare crystal is fixed on the polymer substrate, and each of the light emitting diodes Crystal should be at least one pair of pins, one pair of a pin and a pair of pads, each of the LEDs being electrically connected to the corresponding pair of pins; and (h) forming at least one protective cover, wherein each of the protective covers Corresponding to one of the LED diodes, each of the protective caps is formed to cover its corresponding LED dipole. 如請求項18所述之方法,其中該高分子基材係由選自由聚對苯二甲酸乙二酯、聚醯亞胺、聚酸甲酯以及聚甲基丙烯酸甲酯所組成之群組中之其一所形成,該第一金屬層係選自由單層Cu層、多層Ag/Au層/多層Ag/Au/Sn/Ni層/單層Cu層、單層Sn層/單層Cu層、單層Ag層/單層Cu層、單層Au層/單層Cu層、單層Ag層/單層Ni層/單層Cu層、單層Au層/單層Ni層/單層Cu層以及單層Sn層/單層Au層/單層Ag層/單層Ni層/單層Cu層所組成之群組中之其一。 The method of claim 18, wherein the polymeric substrate is selected from the group consisting of polyethylene terephthalate, polyimide, polymethyl methacrylate, and polymethyl methacrylate. One of the first metal layers is selected from a single layer of Cu layer, a plurality of layers of Ag/Au layer/multilayer Ag/Au/Sn/Ni layer/single layer of Cu layer, a single layer of Sn layer/single layer of Cu layer, Single layer Ag layer/single layer Cu layer, single layer Au layer/single layer Cu layer, single layer Ag layer/single layer Ni layer/single layer Cu layer, single layer Au layer/single layer Ni layer/single layer Cu layer and One of a group consisting of a single-layer Sn layer/single-layer Au layer/single-layer Ag layer/single-layer Ni layer/single-layer Cu layer. 如請求項18所述之方法,其中每一個保護蓋摻入均勻分布之多顆螢光粉顆粒。 The method of claim 18, wherein each of the protective covers incorporates a plurality of uniformly distributed phosphor particles.
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