TWI620483B - Manufacturing method of circuit board - Google Patents
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Abstract
一種線路板的製作方法。將配置有多個接墊的電子元件置入基板與黏著層接合所形成的容置凹槽中。形成覆蓋接墊、電子元件、黏著層及基板的介電層,並蝕刻介電層以暴露接墊的上表面。接著,形成複合材料層以覆蓋接墊及介電層,複合材料層由下而上依序包括可鍍介電層、導電高分子層及抗鍍層。之後,於複合材料層中形成多個開孔,以暴露部分接墊及部分介電層。於開孔的底部及由可鍍介電層與導電高分子層所構成的部分側壁上形成與導電高分子層連接的金屬層。於開孔中形成線路層,並移除導電高分子層及抗鍍層,線路層的上表面與可鍍介電層的上表面對齊。A method of manufacturing a circuit board. The electronic component configured with the plurality of pads is placed in the receiving recess formed by the bonding of the substrate and the adhesive layer. A dielectric layer covering the pads, the electronic components, the adhesive layer, and the substrate is formed, and the dielectric layer is etched to expose the upper surface of the pads. Next, a composite material layer is formed to cover the pad and the dielectric layer, and the composite material layer sequentially includes a plateable dielectric layer, a conductive polymer layer, and a plating resist layer from bottom to top. Thereafter, a plurality of openings are formed in the composite layer to expose portions of the pads and portions of the dielectric layer. A metal layer connected to the conductive polymer layer is formed on the bottom of the opening and a portion of the sidewall formed of the plateable dielectric layer and the conductive polymer layer. A wiring layer is formed in the opening, and the conductive polymer layer and the plating resist are removed, and the upper surface of the wiring layer is aligned with the upper surface of the plateable dielectric layer.
Description
本發明是有關於一種線路板的製作方法,且特別是有關於一種能夠增加佈線密度之線路板的製作方法。The present invention relates to a method of fabricating a circuit board, and more particularly to a method of fabricating a circuit board capable of increasing wiring density.
近年來,隨著電子技術的日新月異,使得更人性化的科技產品相繼問世,同時這些科技產品朝向輕、薄、短、小的趨勢設計。在習知的線路板製作方法中,基於微影偏差因素,環狀墊圈(annular ring)限制導致接墊的寬度需比導通孔的寬度大,進而造成面積使用率下降的問題,使得佈線密度受到影響。圖1是習知的線路板的結構示意圖,如圖1所示,相較於與導電層110連接的導通孔120,與線路層140連接的接墊130的寬度較大而無法縮小,因此,導致面積使用率及佈線密度均下降,故不利於電子產品的設計。再者,習知的線路板結構也可能出現細線路剝離(peeling)問題。In recent years, with the rapid development of electronic technology, more humanized technology products have been introduced, and these technology products are designed to be light, thin, short and small. In the conventional circuit board manufacturing method, based on the lithography deviation factor, the annular ring limitation causes the width of the pad to be larger than the width of the via hole, thereby causing a problem that the area usage rate is lowered, so that the wiring density is affected. influences. 1 is a schematic structural view of a conventional circuit board. As shown in FIG. 1, the width of the pad 130 connected to the circuit layer 140 is larger than that of the via hole 120 connected to the conductive layer 110, and thus cannot be reduced. As a result, both area usage and wiring density are degraded, which is not conducive to the design of electronic products. Furthermore, the conventional circuit board structure may also have a problem of thin line peeling.
基於上述,如何提升面積使用率、增加佈線密度並改善細線路剝離問題為本領域技術人員亟欲達成的目標。Based on the above, how to increase the area utilization rate, increase the wiring density, and improve the thin line peeling problem are the goals that those skilled in the art are eager to achieve.
本發明提供一種線路板的製作方法,能夠使線路板的面積使用率及佈線密度增加,同時改善細線路剝離問題。The invention provides a method for manufacturing a circuit board, which can increase the area utilization rate and the wiring density of the circuit board, and at the same time improve the thin line stripping problem.
本發明提供一種線路板的製作方法,包括以下步驟。首先,提供核心層,其中核心層包括於核心介電層以及位於核心介電層上的導電層,再形成第一複合材料層以覆蓋導電層及核心介電層,第一複合材料層由下而上依序包括第一可鍍介電層、第一導電高分子層及第一抗鍍層。之後,於第一複合材料層中形成多個第一開孔,每一第一開孔對應於每一導電層,以暴露部分導電層。接著,於第一開孔的底部及由第一可鍍介電層與第一導電高分子層所構成的部分側壁上形成第一金屬層,第一金屬層與第一導電高分子層連接。然後,於第一開孔中形成導通孔,並移除第一導電高分子層及第一抗鍍層,導通孔的上表面與第一可鍍介電層的上表面對齊。接下來,形成第二複合材料層以覆蓋導通孔及第一可鍍介電層,第二複合材料層由下而上依序包括第二可鍍介電層、第二導電高分子層及第二抗鍍層。之後,於第二複合材料層中形成多個第二開孔,以暴露部分導通孔及部分第一可鍍介電層。接著,於第二開孔的底部及由第二可鍍介電層與第二導電高分子層所構成的部分側壁上形成第二金屬層,第二金屬層與第二導電高分子層連接。然後,於第二開孔中形成線路層,並移除第二導電高分子層及第二抗鍍層,線路層的上表面與第二可鍍介電層的上表面對齊。The invention provides a method for manufacturing a circuit board, comprising the following steps. First, a core layer is provided, wherein the core layer is included in the core dielectric layer and the conductive layer on the core dielectric layer, and then the first composite material layer is formed to cover the conductive layer and the core dielectric layer, and the first composite material layer is And sequentially comprising a first plateable dielectric layer, a first conductive polymer layer and a first plating resist. Thereafter, a plurality of first openings are formed in the first composite layer, each of the first openings corresponding to each of the conductive layers to expose a portion of the conductive layer. Next, a first metal layer is formed on the bottom of the first opening and a portion of the sidewall formed by the first plateable dielectric layer and the first conductive polymer layer, and the first metal layer is connected to the first conductive polymer layer. Then, a via hole is formed in the first opening, and the first conductive polymer layer and the first plating resist are removed, and the upper surface of the via hole is aligned with the upper surface of the first plateable dielectric layer. Next, a second composite material layer is formed to cover the via holes and the first plateable dielectric layer, and the second composite material layer sequentially includes a second plateable dielectric layer, a second conductive polymer layer, and a second Secondary coating. Thereafter, a plurality of second openings are formed in the second composite material layer to expose a portion of the via holes and a portion of the first plateable dielectric layer. Next, a second metal layer is formed on the bottom of the second opening and a portion of the sidewall formed by the second plateable dielectric layer and the second conductive polymer layer, and the second metal layer is connected to the second conductive polymer layer. Then, a wiring layer is formed in the second opening, and the second conductive polymer layer and the second plating resist are removed, and the upper surface of the wiring layer is aligned with the upper surface of the second switchable dielectric layer.
在本發明的一實施例中,第一抗鍍層及第二抗鍍層的材料包括疏水性高分子材料,疏水性高分子材料包括不含羥基官能基團或羧基官能基團的高分子材料。In an embodiment of the invention, the material of the first anti-plating layer and the second anti-plating layer comprises a hydrophobic polymer material, and the hydrophobic polymer material comprises a polymer material not containing a hydroxyl functional group or a carboxyl functional group.
在本發明的一實施例中,疏水性高分子材料包括環氧樹脂、聚亞醯胺、液晶聚合物、甲基丙烯酸酯型樹脂、乙烯苯基型樹脂、烯丙基型樹脂、聚丙烯酸酯型樹脂、聚醚型樹脂、聚烯烴型樹脂、聚胺型樹脂、聚矽氧烷型樹脂或其組合。In an embodiment of the invention, the hydrophobic polymer material comprises an epoxy resin, a polyamidamine, a liquid crystal polymer, a methacrylate type resin, a vinyl phenyl type resin, an allyl type resin, a polyacrylate. A resin, a polyether resin, a polyolefin resin, a polyamine resin, a polyoxyalkylene resin, or a combination thereof.
在本發明的一實施例中,形成第一開孔及第二開孔的方法包括曝光顯影或雷射鑽孔。In an embodiment of the invention, the method of forming the first opening and the second opening comprises exposure development or laser drilling.
在本發明的一實施例中,以壓膜製程形成第一複合材料層及第二複合材料層,壓膜製程的溫度為60℃至150℃。In an embodiment of the invention, the first composite material layer and the second composite material layer are formed by a lamination process, and the temperature of the lamination process is 60 ° C to 150 ° C.
本發明提供一種線路板的製作方法,包括以下步驟。首先,提供具有第一表面及第二表面的基板,並形成貫穿第一表面及第二表面的通孔。之後,將黏著層與第二表面接合,以形成容置凹槽,再將配置有多個接墊的電子元件置入容置凹槽中。接著,形成覆蓋接墊、電子元件、黏著層及第一表面的介電層,再蝕刻介電層以暴露接墊的上表面。然後,形成複合材料層以覆蓋接墊及介電層,複合材料層由下而上依序包括可鍍介電層、導電高分子層及抗鍍層。接下來,於複合材料層中形成多個開孔,以暴露部分接墊及部分介電層。於開孔的底部及由可鍍介電層與導電高分子層所構成的部分側壁上形成金屬層,金屬層與導電高分子層連接。最後,於開孔中形成線路層,並移除導電高分子層及抗鍍層,線路層的上表面與可鍍介電層的上表面對齊。The invention provides a method for manufacturing a circuit board, comprising the following steps. First, a substrate having a first surface and a second surface is provided, and a through hole penetrating the first surface and the second surface is formed. Thereafter, the adhesive layer is bonded to the second surface to form a receiving recess, and the electronic component configured with the plurality of pads is placed in the receiving recess. Next, a dielectric layer covering the pad, the electronic component, the adhesive layer and the first surface is formed, and the dielectric layer is etched to expose the upper surface of the pad. Then, a composite material layer is formed to cover the pad and the dielectric layer, and the composite material layer sequentially includes a plateable dielectric layer, a conductive polymer layer and a plating resist layer from bottom to top. Next, a plurality of openings are formed in the composite layer to expose portions of the pads and portions of the dielectric layer. A metal layer is formed on the bottom of the opening and a portion of the sidewall formed by the plateable dielectric layer and the conductive polymer layer, and the metal layer is connected to the conductive polymer layer. Finally, a wiring layer is formed in the opening, and the conductive polymer layer and the plating resist are removed, and the upper surface of the wiring layer is aligned with the upper surface of the plateable dielectric layer.
在本發明的一實施例中,抗鍍層的材料包括疏水性高分子材料,疏水性高分子材料包括不含羥基官能基團或羧基官能基團的高分子材料。In an embodiment of the invention, the material of the plating resist comprises a hydrophobic polymer material, and the hydrophobic polymer material comprises a polymer material not containing a hydroxyl functional group or a carboxyl functional group.
在本發明的一實施例中,疏水性高分子材料包括環氧樹脂、聚亞醯胺、液晶聚合物、甲基丙烯酸酯型樹脂、乙烯苯基型樹脂、烯丙基型樹脂、聚丙烯酸酯型樹脂、聚醚型樹脂、聚烯烴型樹脂、聚胺型樹脂、聚矽氧烷型樹脂或其組合。In an embodiment of the invention, the hydrophobic polymer material comprises an epoxy resin, a polyamidamine, a liquid crystal polymer, a methacrylate type resin, a vinyl phenyl type resin, an allyl type resin, a polyacrylate. A resin, a polyether resin, a polyolefin resin, a polyamine resin, a polyoxyalkylene resin, or a combination thereof.
在本發明的一實施例中,形成開孔的方法包括曝光顯影或雷射鑽孔。In an embodiment of the invention, the method of forming the opening comprises exposure development or laser drilling.
在本發明的一實施例中,以壓膜製程形成複合材料層,壓膜製程的溫度為60℃至150℃。In an embodiment of the invention, the composite material layer is formed by a lamination process, and the temperature of the lamination process is from 60 ° C to 150 ° C.
基於上述,本發明所提出的線路板製作方法主要是利用依序包括可鍍介電層、導電高分子層及抗鍍層的複合材料層,其中表層的抗鍍層選用抗化學鍍的材料,內層的可鍍介電層選用可被化學鍍的材料,以進行選擇性化學鍍製程。之後,以中間層由導電材料構成的導電高分子層進行電鍍製程,即可製作出無接墊(pad-less)且具埋入式線路的結構,其中不具有凸出的接墊結構且可縮小接墊寬度。因此,本發明的線路板製作方法能夠改善習知線路板製程中環狀墊圈的限制問題,進而提升面積使用率並增加佈線密度,更可降低細線路剝離的風險。Based on the above, the circuit board manufacturing method proposed by the present invention mainly uses a composite material layer including a plateable dielectric layer, a conductive polymer layer and an anti-plating layer, wherein the anti-plating layer of the surface layer is made of an anti-electroless plating material, and the inner layer The platable dielectric layer is made of a material that can be electrolessly plated for a selective electroless plating process. Then, by performing an electroplating process on the conductive polymer layer composed of a conductive material in the intermediate layer, a pad-less structure having a buried line can be fabricated, wherein the protruding pad structure is not provided and Reduce the width of the pads. Therefore, the circuit board manufacturing method of the present invention can improve the limitation of the annular gasket in the conventional circuit board manufacturing process, thereby improving the area utilization rate and increasing the wiring density, and further reducing the risk of thin line peeling.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.
圖2A至圖2K為依照本發明的第一實施例所繪示的線路板的製作方法的剖面示意圖。2A-2K are schematic cross-sectional views showing a method of fabricating a circuit board according to a first embodiment of the present invention.
首先,請參照圖2A,提供核心層200,其中核心層200包括核心介電層212以及位於核心介電層212上的導電層210。更詳細而言,核心介電層212的材料例如是環氧樹脂,但不以此為限。導電層210例如是銅層,且導電層210例如是藉由壓合的方式形成於核心介電層212上。在本實施例中,核心層200可以是雙面板結構或單面板結構。為清楚及方便說明起見,圖2A至圖2K中僅繪示單面板結構,但本發明並不以此為限。First, referring to FIG. 2A, a core layer 200 is provided, wherein the core layer 200 includes a core dielectric layer 212 and a conductive layer 210 on the core dielectric layer 212. In more detail, the material of the core dielectric layer 212 is, for example, an epoxy resin, but is not limited thereto. The conductive layer 210 is, for example, a copper layer, and the conductive layer 210 is formed on the core dielectric layer 212, for example, by press bonding. In this embodiment, the core layer 200 may be a double panel structure or a single panel structure. For the sake of clarity and convenience of explanation, only the single-panel structure is illustrated in FIGS. 2A to 2K, but the invention is not limited thereto.
接著,請參照圖2B,形成複合材料層220以覆蓋導電層210及核心介電層212,複合材料層220由下而上依序包括可鍍介電層222、導電高分子層224及抗鍍層226。更詳細而言,形成複合材料層220的方法例如是壓膜製程,壓膜製程溫度約為60℃至150℃。然而,本發明並不以此為限,亦可依據介電材料需求調整壓膜製程參數。Next, referring to FIG. 2B, a composite material layer 220 is formed to cover the conductive layer 210 and the core dielectric layer 212. The composite material layer 220 sequentially includes a plateable dielectric layer 222, a conductive polymer layer 224, and a plating resist layer from bottom to top. 226. In more detail, the method of forming the composite material layer 220 is, for example, a lamination process having a lamination process temperature of about 60 ° C to 150 ° C. However, the present invention is not limited thereto, and the lamination process parameters may be adjusted according to the requirements of the dielectric material.
在本實施例中,抗鍍層226具有抗化學鍍的性質,其材料例如是疏水性高分子材料,且疏水性高分子材料可包括不含羥基官能基團或羧基官能基團的高分子材料。更詳細而言,疏水性高分子材料可包括環氧樹脂、聚亞醯胺、液晶聚合物、甲基丙烯酸酯型樹脂、乙烯苯基型樹脂、烯丙基型樹脂、聚丙烯酸酯型樹脂、聚醚型樹脂、聚烯烴型樹脂、聚胺型樹脂、聚矽氧烷型樹脂或其組合。抗鍍層226的厚度例如是5 μm至10 μm,但本發明並不以此為限。In the present embodiment, the plating resist 226 has anti-electroless plating properties, and the material thereof is, for example, a hydrophobic polymer material, and the hydrophobic polymer material may include a polymer material containing no hydroxyl functional group or carboxyl functional group. More specifically, the hydrophobic polymer material may include an epoxy resin, a polyamidamine, a liquid crystal polymer, a methacrylate type resin, a vinyl phenyl type resin, an allyl type resin, a polyacrylate type resin, A polyether type resin, a polyolefin type resin, a polyamine type resin, a polyoxyalkylene type resin, or a combination thereof. The thickness of the plating resist 226 is, for example, 5 μm to 10 μm, but the invention is not limited thereto.
在本實施例中,導電高分子層224具有導電性質,其製作方法例如是將經摻雜而具導電特性的高分子(例如溴、碘摻雜於聚乙炔)均勻噴塗於膜層中。導電高分子層224的厚度例如是3 μm至5 μm,但本發明並不以此為限。可鍍介電層222具有可被化學鍍的性質,其材質例如是感光介質(Photo-Imageable Dielectric,PID)。可鍍介電層222的厚度例如是20 μm至70 μm,但本發明並不以此為限。In the present embodiment, the conductive polymer layer 224 has a conductive property, and is produced by, for example, uniformly doping a polymer having a conductive property (for example, bromine or iodine doped with polyacetylene) into the film layer. The thickness of the conductive polymer layer 224 is, for example, 3 μm to 5 μm, but the invention is not limited thereto. The plateable dielectric layer 222 has a property of being electrolessly plated, and the material thereof is, for example, a photo-imageable dielectric (PID). The thickness of the plateable dielectric layer 222 is, for example, 20 μm to 70 μm, but the invention is not limited thereto.
之後,請參照圖2C,於複合材料層220中形成多個開孔H1,每一開孔H1對應於每一導電層210,以暴露部分導電層210。在本實施例中,形成多個開孔H1的方法可包括曝光顯影或雷射鑽孔。Thereafter, referring to FIG. 2C, a plurality of openings H1 are formed in the composite material layer 220, and each of the openings H1 corresponds to each of the conductive layers 210 to expose a portion of the conductive layer 210. In the present embodiment, the method of forming the plurality of openings H1 may include exposure development or laser drilling.
然後,請參照圖2D,於開孔H1的底部及部分側壁上形成金屬層230,且第一金屬層230與導電高分子層224連接。在本實施例中,形成金屬層230的方法例如是選擇性化學鍍製程。如上文中所述,由於可鍍介電層222具有可被化學鍍的性質,且抗鍍層226具有抗化學鍍的性質,因此,藉由選擇性化學鍍製程,金屬層230可僅形成於開孔H1的底部以及由可鍍介電層222及導電高分子層224所構成的開孔H1之部分側壁上,而不形成於抗鍍層226所構成的開孔H1之側壁上。Then, referring to FIG. 2D, a metal layer 230 is formed on the bottom portion and a portion of the sidewall of the opening H1, and the first metal layer 230 is connected to the conductive polymer layer 224. In the present embodiment, the method of forming the metal layer 230 is, for example, a selective electroless plating process. As described above, since the plateable dielectric layer 222 has properties that can be electrolessly plated, and the plating resist 226 has anti-electroless plating properties, the metal layer 230 can be formed only in the opening by a selective electroless plating process. The bottom portion of the H1 and the side wall of the opening H1 composed of the plateable dielectric layer 222 and the conductive polymer layer 224 are not formed on the sidewall of the opening H1 formed by the plating resist 226.
接著,請參照圖2E,於開孔H1中形成導通孔240。在本實施例中,形成導通孔240的方法例如是電鍍製程。此時,導通孔240的上表面與導電高分子層224的上表面對齊。Next, referring to FIG. 2E, a via hole 240 is formed in the opening H1. In the present embodiment, the method of forming the via holes 240 is, for example, an electroplating process. At this time, the upper surface of the via hole 240 is aligned with the upper surface of the conductive polymer layer 224.
請同時參照圖2E及圖2F,移除導電高分子層224及抗鍍層226,也移除部分導通孔240。在本實施例中,移除導電高分子層224、抗鍍層226及部分導通孔240的方法例如是去膜蝕刻製程。此時,如圖2F所示,導通孔240的上表面與可鍍介電層222的上表面對齊。Referring to FIG. 2E and FIG. 2F simultaneously, the conductive polymer layer 224 and the plating resist 226 are removed, and part of the via holes 240 are also removed. In the present embodiment, the method of removing the conductive polymer layer 224, the plating resist 226, and a portion of the via holes 240 is, for example, a film removing etching process. At this time, as shown in FIG. 2F, the upper surface of the via hole 240 is aligned with the upper surface of the plateable dielectric layer 222.
之後,請參照圖2G,形成複合材料層250以覆蓋導通孔240及可鍍介電層222,複合材料層250由下而上依序包括可鍍介電層252、導電高分子層254及抗鍍層256。更詳細而言,形成複合材料層250的方法例如是壓膜製程,壓膜製程溫度約為60℃至150℃。然而,本發明並不以此為限,亦可依據介電材料需求調整壓膜製程參數。Then, referring to FIG. 2G, a composite material layer 250 is formed to cover the via holes 240 and the plateable dielectric layer 222. The composite material layer 250 sequentially includes a plateable dielectric layer 252, a conductive polymer layer 254, and an anti-resistant layer from bottom to top. Plating 256. In more detail, the method of forming the composite material layer 250 is, for example, a lamination process having a lamination process temperature of about 60 ° C to 150 ° C. However, the present invention is not limited thereto, and the lamination process parameters may be adjusted according to the requirements of the dielectric material.
必須說明的是,可鍍介電層252、導電高分子層254及抗鍍層256的性質、材料及厚度分別與上文中所述的可鍍介電層222、導電高分子層224及抗鍍層226相似,故在此不予贅述。It should be noted that the properties, materials and thicknesses of the plateable dielectric layer 252, the conductive polymer layer 254 and the plating resist 256 are respectively different from the plateable dielectric layer 222, the conductive polymer layer 224 and the anti-plating layer 226 described above. Similar, so I won't go into details here.
接著,請參照圖2H,於複合材料層250中形成多個開孔H2,以暴露部分導通孔240及部分可鍍介電層222。在本實施例中,形成多個開孔H2的方法可包括曝光顯影或雷射鑽孔。Next, referring to FIG. 2H, a plurality of openings H2 are formed in the composite material layer 250 to expose a portion of the via holes 240 and a portion of the plateable dielectric layer 222. In the present embodiment, the method of forming the plurality of openings H2 may include exposure development or laser drilling.
然後,請參照圖2I,於開孔H2的底部及部分側壁上形成金屬層260,金屬層260與導電高分子層254連接。在本實施例中,形成金屬層260的方法例如是選擇性化學鍍製程。如上文中所述,由於可鍍介電層252具有可被化學鍍的性質,且抗鍍層256具有抗化學鍍的性質,因此,藉由選擇性化學鍍製程,金屬層260可僅形成於開孔H2的底部以及由可鍍介電層252及導電高分子層254所構成的開孔H2之部分側壁上,而不形成於抗鍍層256所構成的開孔H2之側壁上。Then, referring to FIG. 2I, a metal layer 260 is formed on the bottom portion and a portion of the sidewall of the opening H2, and the metal layer 260 is connected to the conductive polymer layer 254. In the present embodiment, the method of forming the metal layer 260 is, for example, a selective electroless plating process. As described above, since the plateable dielectric layer 252 has properties that can be electrolessly plated, and the plating resist 256 has anti-electroless plating properties, the metal layer 260 can be formed only in the opening by a selective electroless plating process. The bottom portion of the H2 and the side wall of the opening H2 composed of the plateable dielectric layer 252 and the conductive polymer layer 254 are not formed on the sidewall of the opening H2 formed by the plating resist 256.
接著,請參照圖2J,於開孔H2中形成線路層270。在本實施例中,形成線路層270的方法例如是電鍍製程。此時,線路層270的上表面與導電高分子層254的上表面對齊。Next, referring to FIG. 2J, a wiring layer 270 is formed in the opening H2. In the present embodiment, the method of forming the wiring layer 270 is, for example, an electroplating process. At this time, the upper surface of the wiring layer 270 is aligned with the upper surface of the conductive polymer layer 254.
請同時參照圖2J及圖2K,移除導電高分子層254及抗鍍層256,也移除部分線路層270。在本實施例中,移除導電高分子層254、抗鍍層256及部分線路層270的方法例如是去膜蝕刻製程。此時,如圖2K所示,線路層270的上表面與可鍍介電層252的上表面對齊。如此一來,即可完成線路板20的製作。線路板20具有埋入式線路的結構,其中不具有凸出的接墊結構且可縮小接墊寬度,因此,能夠改善習知線路板製程中環狀墊圈的限制問題,進而提升面積使用率並增加佈線密度,更可降低細線路剝離的風險。Referring to FIG. 2J and FIG. 2K simultaneously, the conductive polymer layer 254 and the plating resist 256 are removed, and part of the wiring layer 270 is also removed. In the present embodiment, the method of removing the conductive polymer layer 254, the plating resist 256, and the portion of the wiring layer 270 is, for example, a stripping etching process. At this time, as shown in FIG. 2K, the upper surface of the wiring layer 270 is aligned with the upper surface of the plateable dielectric layer 252. In this way, the production of the circuit board 20 can be completed. The circuit board 20 has a buried circuit structure in which the protruding pad structure is not provided and the width of the pad can be reduced. Therefore, the limitation of the annular gasket in the conventional circuit board process can be improved, thereby improving the area utilization rate. Increase the wiring density and reduce the risk of thin line stripping.
圖3A至圖3K為依照本發明的第二實施例所繪示的線路板的製作方法的剖面示意圖。必須說明的是,圖3A至圖3K所示之第二實施例相似於圖2A至圖2K所示之第一實施例,兩者之差異在於圖3A至圖3K所示之實施例為本發明線路板的製作方法在埋入式電子元件方面的應用。因此,在下述實施例中,將省略相同技術內容的說明,關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。3A-3K are schematic cross-sectional views showing a method of fabricating a circuit board according to a second embodiment of the present invention. It should be noted that the second embodiment shown in FIG. 3A to FIG. 3K is similar to the first embodiment shown in FIG. 2A to FIG. 2K, and the difference between the two is that the embodiment shown in FIG. 3A to FIG. 3K is the present invention. The application of the circuit board in the application of embedded electronic components. Therefore, in the following embodiments, the description of the same technical content will be omitted, and the description of the omitted portions may refer to the foregoing embodiments, and the following embodiments will not be repeated.
首先,請同時參照圖3A及圖3B,提供具有第一表面300A及第二表面300B的基板300,並形成貫穿第一表面300A及第二表面300B的通孔302。在本實施例中,形成通孔302的方法例如是雷射鑽孔或機械鑽孔。基板300的材料例如是介電材料,介電材料可包括樹脂纖維,但並不以此為限。First, referring to FIG. 3A and FIG. 3B simultaneously, a substrate 300 having a first surface 300A and a second surface 300B is provided, and a through hole 302 penetrating the first surface 300A and the second surface 300B is formed. In the present embodiment, the method of forming the through hole 302 is, for example, a laser drilling or a mechanical drilling. The material of the substrate 300 is, for example, a dielectric material, and the dielectric material may include resin fibers, but is not limited thereto.
接著,請參照圖3C,將黏著層310與基板300的第二表面300B接合,以形成在後續製程中用來置入埋入式元件的容置凹槽304。在本實施例中,黏著層310例如是聚醯亞胺膠帶,但不此為限,亦可使用其他能夠固定埋入式元件的元件黏著層材料。Next, referring to FIG. 3C, the adhesive layer 310 is bonded to the second surface 300B of the substrate 300 to form a receiving recess 304 for inserting the embedded component in a subsequent process. In the present embodiment, the adhesive layer 310 is, for example, a polyimide tape, but not limited thereto, and other component adhesive layer materials capable of fixing the embedded component may be used.
之後,請參照圖3D,將配置有多個接墊330的電子元件320置入容置凹槽304底部的黏著層310上,以使電子元件320固定於容置凹槽304中。容置凹槽304的尺寸適於容置電子元件320。在本實施例中,接墊330的材料例如是金屬導電材料,電子元件320例如是晶片(chip)或多層陶瓷電容器(multi-layer ceramic capacitor,MLCC)等被動元件,但本發明並不以此為限。Then, referring to FIG. 3D , the electronic component 320 configured with the plurality of pads 330 is placed on the adhesive layer 310 at the bottom of the receiving recess 304 to fix the electronic component 320 in the receiving recess 304 . The receiving recess 304 is sized to receive the electronic component 320. In this embodiment, the material of the pad 330 is, for example, a metal conductive material, and the electronic component 320 is, for example, a passive component such as a chip or a multi-layer ceramic capacitor (MLCC), but the present invention does not Limited.
接下來,請參照圖3E,形成覆蓋接墊330、電子元件320、黏著層310及第一表面300A的介電層340。在本實施例中,介電層340的材料可包括本領域習知的介電材料。Next, referring to FIG. 3E, a dielectric layer 340 covering the pad 330, the electronic component 320, the adhesive layer 310, and the first surface 300A is formed. In this embodiment, the material of the dielectric layer 340 may comprise a dielectric material as is known in the art.
之後,請參照圖3F,蝕刻介電層340以暴露接墊330的上表面。在本實施例中,蝕刻介電層340的方法例如是乾式蝕刻法或化學蝕刻法。Thereafter, referring to FIG. 3F, the dielectric layer 340 is etched to expose the upper surface of the pad 330. In the present embodiment, the method of etching the dielectric layer 340 is, for example, a dry etching method or a chemical etching method.
接著,請參照圖3G,形成複合材料層350以覆蓋接墊330及介電層340,複合材料層350由下而上依序包括可鍍介電層352、導電高分子層352及抗鍍層356。更詳細而言,形成複合材料層350的方法例如是壓膜製程,壓膜製程溫度約為60℃至150℃。然而,本發明並不以此為限,亦可依據介電材料需求調整壓膜製程參數。Next, referring to FIG. 3G, a composite material layer 350 is formed to cover the pad 330 and the dielectric layer 340. The composite material layer 350 sequentially includes a plateable dielectric layer 352, a conductive polymer layer 352, and a plating resist 356 from bottom to top. . In more detail, the method of forming the composite material layer 350 is, for example, a lamination process having a lamination process temperature of about 60 ° C to 150 ° C. However, the present invention is not limited thereto, and the lamination process parameters may be adjusted according to the requirements of the dielectric material.
必須說明的是,可鍍介電層352、導電高分子層352及抗鍍層356的性質、材料及厚度分別與上文第一實施例中所述的可鍍介電層222、導電高分子層224及抗鍍層226相似,故在此不予贅述。It should be noted that the properties, materials, and thicknesses of the plateable dielectric layer 352, the conductive polymer layer 352, and the plating resist 356 are respectively different from the plateable dielectric layer 222 and the conductive polymer layer described in the first embodiment above. 224 is similar to the anti-plating layer 226, so it will not be described here.
接著,請參照圖3H,於複合材料層350中形成多個開孔H3,以暴露部分接墊330及部分介電層340。在本實施例中,形成多個開孔H3的方法可包括曝光顯影或雷射鑽孔。Next, referring to FIG. 3H, a plurality of openings H3 are formed in the composite material layer 350 to expose the partial pads 330 and the portion of the dielectric layer 340. In the present embodiment, the method of forming the plurality of openings H3 may include exposure development or laser drilling.
之後,請參照圖3I,於開孔H3的底部及部分側壁上形成金屬層360,金屬層360與導電高分子層354連接。在本實施例中,形成金屬層360的方法例如是選擇性化學鍍製程。如上文中所述,由於可鍍介電層352具有可被化學鍍的性質,且抗鍍層356具有抗化學鍍的性質,因此,藉由選擇性化學鍍製程,金屬層360可僅形成於開孔H3的底部以及由可鍍介電層352及導電高分子層354所構成的開孔H3之部分側壁上,而不形成於抗鍍層356所構成的開孔H3之側壁上。Thereafter, referring to FIG. 3I, a metal layer 360 is formed on the bottom portion and a portion of the sidewall of the opening H3, and the metal layer 360 is connected to the conductive polymer layer 354. In the present embodiment, the method of forming the metal layer 360 is, for example, a selective electroless plating process. As described above, since the plateable dielectric layer 352 has properties that can be electrolessly plated, and the plating resist 356 has anti-electroless plating properties, the metal layer 360 can be formed only in the opening by a selective electroless plating process. The bottom portion of the H3 and the side wall of the opening H3 composed of the plateable dielectric layer 352 and the conductive polymer layer 354 are not formed on the sidewall of the opening H3 formed by the plating resist 356.
接著,請參照圖3J,於開孔H3中形成線路層370。在本實施例中,形成線路層370的方法例如是電鍍製程。此時,線路層370的上表面與導電高分子層354的上表面對齊。Next, referring to FIG. 3J, a wiring layer 370 is formed in the opening H3. In the present embodiment, the method of forming the wiring layer 370 is, for example, an electroplating process. At this time, the upper surface of the wiring layer 370 is aligned with the upper surface of the conductive polymer layer 354.
請同時參照圖3J及圖3K,移除導電高分子層354及抗鍍層356,也移除部分線路層370。在本實施例中,移除導電高分子層354、抗鍍層356及部分線路層370的方法例如是去膜蝕刻製程。此時,如圖3K所示,線路層370的上表面與可鍍介電層352的上表面對齊,其中不具有凸出的接墊結構且可縮小接墊寬度,因此,能夠改善習知線路板製程中環狀墊圈的限制問題,進而提升面積使用率並增加佈線密度。如此一來,即可完成本發明所提出之線路板的製作方法在埋入式元件的應用。Referring to FIG. 3J and FIG. 3K simultaneously, the conductive polymer layer 354 and the plating resist 356 are removed, and part of the wiring layer 370 is also removed. In the present embodiment, the method of removing the conductive polymer layer 354, the plating resist 356, and the portion of the wiring layer 370 is, for example, a film removing etching process. At this time, as shown in FIG. 3K, the upper surface of the wiring layer 370 is aligned with the upper surface of the plateable dielectric layer 352, which has no protruding pad structure and can reduce the width of the pad, thereby improving the conventional line. Limitation of annular gaskets in the board process, which in turn increases area utilization and increases wiring density. In this way, the application method of the circuit board proposed by the present invention in the embedded component can be completed.
圖4是依照本發明的線路板的製作方法所製作出之線路板的結構示意圖。4 is a schematic view showing the structure of a circuit board produced by the method for fabricating a circuit board according to the present invention.
請同時參照圖1及圖4,如圖1中所示,先以導通孔120(盲孔)導通層間在扇出(fan out),存在環狀墊圈的限制,使接墊130無法縮小,因此,導致面積使用率及佈線密度均下降,不利於電子產品的設計。相較之下,如圖4中所示,透過本發明所提出的線路板製作方法,將導通孔410與線路層420連接,透過無接墊(pad-less)技術將元件訊號扇出,其中不具有凸出的接墊結構且可縮小接墊寬度,因此,能夠提升面積使用率並增加佈線密度。Referring to FIG. 1 and FIG. 4 simultaneously, as shown in FIG. 1 , the conduction holes 120 (blind holes) are first turned on between the layers, and there is a limitation of the annular gasket, so that the pads 130 cannot be reduced. As a result, both area usage and wiring density are degraded, which is not conducive to the design of electronic products. In contrast, as shown in FIG. 4, through the circuit board manufacturing method proposed by the present invention, the via hole 410 is connected to the circuit layer 420, and the component signal is fanned out through a pad-less technique, wherein There is no protruding pad structure and the pad width can be reduced, so that the area usage rate can be increased and the wiring density can be increased.
綜上所述,本發明所提出的線路板製作方法主要是利用依序包括可鍍介電層、導電高分子層及抗鍍層的複合材料層,其中表層的抗鍍層選用抗化學鍍的材料,內層的可鍍介電層選用可被化學鍍的材料,以進行選擇性化學鍍製程。之後,以中間層由導電材料構成的導電高分子層進行電鍍製程,即可製作出無接墊且具埋入式線路的結構。並且,本發明的線路板製作方法亦可應用於埋入式元件,改善習知導通方法中接墊無法縮小及環狀墊圈的限制問題。因此,能夠提升面積使用率並增加佈線密度,更可降低細線路剝離的風險。In summary, the circuit board manufacturing method proposed by the present invention mainly uses a composite material layer including a dielectric layer, a conductive polymer layer and an anti-plating layer in sequence, wherein the anti-plating layer of the surface layer is made of an anti-electroless plating material. The inner layer of the plateable dielectric layer is made of a material that can be electrolessly plated for a selective electroless plating process. Thereafter, the electroconductive polymer layer made of a conductive material in the intermediate layer is subjected to an electroplating process to fabricate a structure having no pads and a buried wiring. Moreover, the method of fabricating the circuit board of the present invention can also be applied to a buried component, which improves the problem that the pad cannot be reduced and the annular gasket is limited in the conventional conduction method. Therefore, the area utilization rate can be increased and the wiring density can be increased, and the risk of thin line peeling can be reduced.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
20:線路板 110、210:導電層 120、240、410:導通孔 130、330:接墊 140、270、370、420:線路層 200:核心層 212:核心介電層 220、250、350:複合材料層 222、252、352:可鍍介電層 224、254、354:導電高分子層 226、256、356:抗鍍層 230、260、360:金屬層 300:基板 300A:第一表面 300B:第二表面 302:通孔 304:容置凹槽 310:黏著層 320:電子元件 340:介電層 H1、H2、H3:開孔20: circuit boards 110, 210: conductive layers 120, 240, 410: vias 130, 330: pads 140, 270, 370, 420: circuit layer 200: core layer 212: core dielectric layers 220, 250, 350: Composite material layers 222, 252, 352: platable dielectric layers 224, 254, 354: conductive polymer layers 226, 256, 356: plating resists 230, 260, 360: metal layer 300: substrate 300A: first surface 300B: Second surface 302: through hole 304: receiving groove 310: adhesive layer 320: electronic component 340: dielectric layer H1, H2, H3: opening
圖1是習知的線路板的結構示意圖。 圖2A至圖2K為依照本發明的第一實施例所繪示的線路板的製作方法的剖面示意圖。 圖3A至圖3K為依照本發明的第二實施例所繪示的線路板的製作方法的剖面示意圖。 圖4是依照本發明的線路板的製作方法所製作出之線路板的結構示意圖。1 is a schematic structural view of a conventional circuit board. 2A-2K are schematic cross-sectional views showing a method of fabricating a circuit board according to a first embodiment of the present invention. 3A-3K are schematic cross-sectional views showing a method of fabricating a circuit board according to a second embodiment of the present invention. 4 is a schematic view showing the structure of a circuit board produced by the method for fabricating a circuit board according to the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105124759A TWI620483B (en) | 2016-08-04 | 2016-08-04 | Manufacturing method of circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105124759A TWI620483B (en) | 2016-08-04 | 2016-08-04 | Manufacturing method of circuit board |
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| TW201806459A TW201806459A (en) | 2018-02-16 |
| TWI620483B true TWI620483B (en) | 2018-04-01 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200816443A (en) * | 2006-09-19 | 2008-04-01 | Phoenix Prec Technology Corp | Circuit board structure having embedded semiconductor chip and fabrication method thereof |
| TW201003865A (en) * | 2008-07-04 | 2010-01-16 | Phoenix Prec Technology Corp | Substrate having semiconductor chip embedded therein and fabrication method thereof |
| TW201116179A (en) * | 2009-10-29 | 2011-05-01 | Unimicron Technology Corp | Manufacturing method of circuit structure |
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2016
- 2016-08-04 TW TW105124759A patent/TWI620483B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200816443A (en) * | 2006-09-19 | 2008-04-01 | Phoenix Prec Technology Corp | Circuit board structure having embedded semiconductor chip and fabrication method thereof |
| TW201003865A (en) * | 2008-07-04 | 2010-01-16 | Phoenix Prec Technology Corp | Substrate having semiconductor chip embedded therein and fabrication method thereof |
| TW201116179A (en) * | 2009-10-29 | 2011-05-01 | Unimicron Technology Corp | Manufacturing method of circuit structure |
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| Publication number | Publication date |
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| TW201806459A (en) | 2018-02-16 |
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