TWI618905B - Substrate processing device - Google Patents

Abstract

Provided is a substrate processing apparatus capable of suppressing chattering and misalignment of a substrate.

The substrate processing apparatus (1) according to the embodiment is provided with a first processing device (1) which is provided above and below the transfer path (H) so as to hold the transfer path (H) in the processing chamber (2). The first gas supply unit (4a) and the second gas supply unit (4b) and a rectification plate (5) installed in the processing chamber (2) to adjust the flow direction of the gas. The first gas supply unit (4a) and the second gas supply unit (4b) each have a long blowout port (13), and the long side direction of the blowout port (13) is transported to the substrate (W) in a horizontal plane. The direction (Ha) is inclined in the same direction, and the blow-out port (13) is provided so as to blow out the gas toward the upstream side of the conveyance direction (Ha) of the substrate (W). The fairing plate (5) is a second surface (5b) having a first surface (5a) and an opposite surface thereof, and is located below the conveying path (H) and is poured toward the downstream side of the substrate (W) in the conveying direction (Ha). The gas flow direction is divided into a flow direction along the first surface (5a) and a flow direction along the second surface (5b).

Description

Substrate processing device

An embodiment of the present invention relates to a substrate processing apparatus.

As a substrate processing device used in manufacturing processes such as liquid crystal or cover glass, a substrate is processed with a processing liquid (such as a chemical liquid and a cleaning liquid), and then the substrate is sprayed with a gas. A substrate processing apparatus for drying processing. In addition, a substrate processing apparatus that processes a substrate by blowing a gas (for example, a processing gas) has also been developed. Such a substrate processing apparatus performs substrate processing by blowing gas onto the substrate while conveying the substrate by a plurality of rotating drums in a processing chamber (processing tank). In the processing chamber, for example, means for blowing gas such as an air knife are provided above and below the substrate transfer path. The upper air knife is inclined downward, and the lower air knife is inclined upward, and supplies gas.

However, in the aforementioned processing chamber, turbulence may occur depending on the flow velocity, flow rate, and the like of the gas sprayed on the substrate. Until the substrate is transported to the vicinity of the air knife, the gas supplied from each air knife collides and merges on the way, travels substantially parallel to the transport path, and travels in a direction opposite to the substrate transport direction. Since the transport path includes a transport roller for transporting the substrate, the transport path is different from the transport path. The gas that travels substantially in parallel, because of the Coanda effect, faces downward along the curved surface (outer peripheral surface) of the transfer drum. The downward air collides with the bottom of the processing chamber and becomes turbulent. Most of the turbulence collides with the back surface of the substrate in the middle of being transported into the processing chamber.

Therefore, if the thickness of the substrate becomes thin (for example, if it is a thickness of several nm or less), the substrate itself will become lighter, and the substrate that is lighter in weight may be lifted up by turbulence and tremor may occur. In addition, the substrate may be deviated from the conveyance path due to turbulent flow. The vibration of the substrate and the deviation in transportation can cause factors such as damage to the substrate (including scratches, etc.), processing failure, and the like. In the stage where the substrate is carried into the processing chamber and does not reach the air knife, if the substrate trembles due to turbulent flow, the substrate may not smoothly enter the gap between the upper and lower air knife when the air knife is reached, and the substrate may be damaged. Under these circumstances, it is required to suppress the vibration of the substrate and the deviation of the conveyance.

The problem to be solved by the present invention is to provide a substrate processing apparatus capable of suppressing conveyance defects such as substrate chattering and conveyance deviation.

The substrate processing apparatus according to the embodiment includes a processing chamber, a transfer unit provided in the processing chamber, and a transfer unit for transferring the substrate. The transfer unit is provided above and below the transfer path so as to hold the transfer path of the transfer substrate in the processing chamber, and faces the transfer path. The first gas supply unit and the second gas supply unit that spray the gas, and a rectifying plate which is installed in the processing chamber and adjusts the flow direction of the gas. The first gas supply portion and the second gas supply portion are each provided with a long blowout port for blowing out gas, and the longitudinal direction of the blowout port faces the The conveyance direction of the substrate is inclined in the same direction, and the blowout port is provided so as to blow out gas toward the upstream side of the conveyance direction of the substrate. The rectifying plate is a second surface having a first surface and a surface opposite to the first surface, which is located below the conveying path and is poured toward the downstream side of the substrate in the conveying direction to divide the flow of gas into the flow along the first surface. It is installed in a manner to flow along the second surface.

The substrate processing apparatus according to the embodiment includes a processing chamber, a transfer unit provided in the processing chamber, and a transfer unit for transferring the substrate. The transfer unit is provided above and below the transfer path so as to hold the transfer path of the transfer substrate in the processing chamber, and faces the transfer path. The first gas supply unit and the second gas supply unit that spray the gas, and a rectifying plate which is installed in the processing chamber and adjusts the flow direction of the gas. The first gas supply unit and the second gas supply unit are each provided with a long blowout port that blows out gas. The longitudinal direction of the blowout port is inclined in the horizontal plane in the same direction as the substrate transport direction and toward the substrate transport direction. Set the way of blowing gas on the upstream side. The fairing plate is located below the conveyance path and is tilted toward the downstream side in the conveyance direction of the substrate, and is provided on the bottom surface of the processing chamber.

According to the above-mentioned substrate processing apparatus according to the embodiment, it is possible to suppress conveyance defects such as chattering of the substrate and conveyance deviation.

1‧‧‧ substrate processing device

2‧‧‧ treatment room

2a‧‧‧bottom chamber

2b‧‧‧ exhaust port

3‧‧‧ Transport Department

3a‧‧‧ transport roller

4‧‧‧Gas supply unit

4a‧‧‧First gas supply unit

4b‧‧‧Second gas supply unit

5‧‧‧ Rectifier

5a‧‧‧Part 1

5b‧‧‧side 2

6‧‧‧Suppression plate

7‧‧‧Liquid recovery board

11‧‧‧ roller

12‧‧‧ shaft

13‧‧‧ blowout

20‧‧‧ exhaust port

51‧‧‧ Rectifier

51a‧‧‧Part 1

51b‧‧‧Part 2

G‧‧‧Interval (interval)

H‧‧‧ transport route

Ha‧‧‧ transport direction

L‧‧‧ Distance

L1‧‧‧ length

L2‧‧‧ length

M1‧‧‧ Underside

M2‧‧‧ side

W‧‧‧ substrate

[Fig. 1] A cross-sectional view showing a schematic structure of a substrate processing apparatus according to a first embodiment.

[Fig. 2] A longitudinal sectional view showing a schematic structure of a substrate processing apparatus according to a first embodiment (a cross-sectional view at a line A1-A1 in Fig. 1).

[Fig. 3] Fig. 3 is an explanatory diagram for explaining a gas flow direction in the first embodiment.

4 is a longitudinal sectional view showing a schematic structure of a substrate processing apparatus according to a second embodiment.

5 is a longitudinal sectional view showing a schematic structure of a substrate processing apparatus according to a third embodiment.

6 is a cross-sectional view illustrating a schematic structure of a substrate processing apparatus according to another embodiment.

(First Embodiment)

The first embodiment will be described with reference to FIGS. 1 to 3.

As shown in FIG. 1 and FIG. 2, a substrate processing apparatus 1 according to an embodiment includes a processing chamber 2 for processing a substrate W, a transfer unit 3 for transferring the substrate W, and a substrate for blowing gas onto the transferred substrate W. A gas supply unit 4 and a plurality of rectifying plates 5 that adjust the flow direction of the gas. In addition, the substrate W is transported in a predetermined transport direction Ha (for example, the right direction in FIGS. 1 and 2) in the horizontal plane.

The processing chamber 2 is a housing in which a conveying path H (see FIG. 2) for conveying the substrate W is contained. The conveyance path H is located approximately at the center in the up-down direction of the processing chamber 2. As the substrate W, a rectangular substrate such as glass is often used, and the thickness of the substrate W is about 0.5 mm as an example. In addition, both surfaces (upper and lower surfaces in FIG. 2) of the substrate W before being transported into the processing chamber 2 are moistened by a liquid such as a cleaning solution. Furthermore, a drop occurs in the processing chamber 2 The flow (vertical laminar flow) is formed on the bottom surface M1 of the processing chamber 2 with a discharge port (not shown) that discharges the liquid removed from the substrate W.

The transfer unit 3 includes a plurality of long transfer rollers 3 a, and the substrates W placed on the transfer rollers 3 a are transferred by the rotation of the transfer rollers 3 a. Each of the transfer rollers 3a is rotatably provided, and is arranged side by side at a predetermined interval so that the transfer direction Ha of the substrate W is orthogonal in the horizontal plane to form a transfer path H of the substrate W. The transfer rollers 3a are constituted by a plurality of rollers 11 and a shaft 12 that holds the rollers 11, respectively. Each of the transfer rollers 3a has a structure that rotates in synchronization with each other. In addition, the arrangement interval of the transfer rollers 3a is determined according to the size of the substrate W, and each transfer roller 3a avoids the gas in the transfer path H so as not to interfere with the gas supply to the substrate W caused by the gas supply unit 4. Supply position.

The gas supply unit 4 is provided with a first gas supply unit (first air knife) 4a and a second gas supply unit (second air knife), which are arranged one above the other to the transport path H so as to hold the transport path H. 4b. The first gas supply unit 4a discharges gas (for example, air or nitrogen) from an upper position toward the transfer path H, and the second gas supply unit 4b discharges gas (for example, air or nitrogen) from a lower position toward the transfer path H. This gas supply unit 4 blows gas from the first gas supply unit 4a and the second gas supply unit 4b toward the transfer path H, and dries both sides of the substrate W passing through the transfer path H.

The first gas supply unit 4a has a rectangular-shaped blowout port (a long blowout port) 13 that blows out the gas. The blowout port 13 is provided at a position above the transfer path H so that the gas is blown out on the upstream side of the substrate W in the conveying direction Ha. . In detail, the first gas supply unit 4a is as shown in FIG. It is shown that it is provided at an inclination angle θ1 (for example, 70 degrees) so as to straddle the conveyance path H and the end of the lower side with respect to the end of the upper side of the first gas supply portion 4a in the conveyance direction Ha. Further, the first gas supply portion 4a is arranged such that the gas is blown out toward the upstream side of the conveying direction Ha with the blowout port 13 facing downward. As shown in FIG. 2, the end opposite to the blowout port 13 of the first gas supply portion 4a The part side is provided with an inclination angle θ2 (for example, within a range of 50 ° to 70 °) downstream of the conveyance direction Ha. The distance (interval) G between the air outlet 13 of the first gas supply portion 4a and the surface of the substrate W in the vertical direction is about several mm (for example, 3 mm).

The second gas supply unit 4b also has a rectangular-shaped blowout port (long blowout port) 13 through which gas is blown. The blowout port 13 is provided at a position below the conveyance path H so that the gas is blown out on the upstream side of the substrate W in the conveying direction Ha. . The second gas supply portion 4b is inclined similarly to the first gas supply portion 4a (in the same direction and the same angle as the first gas supply portion 4a), and the air outlets of the first gas supply portion 4a and the second gas supply portion 4b are opposite to each other. to.

Each of the rectifying plates 5 is formed in a rectangular plate shape as shown in FIG. 1, and is individually provided below the conveying path H so as to be orthogonal to the conveying direction Ha of the substrate W in a horizontal plane. These rectifying plates 5 are shifted by a predetermined distance in the conveying direction Ha of the substrate W, and are arranged side by side along the long side direction of the blow-out port 13 (all of them are arranged by being shifted by the same distance). For example, the rectifying plates 5 are arranged side by side so that the virtual line I connecting these centers is parallel to the longitudinal direction of the blow-out port 13. Each of the rectifying plates 5 covers the width of the substrate W (a direction orthogonal to the transport direction Ha of the substrate W in the horizontal plane). Length). Furthermore, the predetermined distance that the rectifying plate 5 is offset from the conveying direction Ha is a distance in which the right side of the rectifying plate 5 and the left side of the rectifying plate 5 adjacent to the downstream side are located on the same straight line in the plan view of FIG. 1 (FIG. 1). The width (L) of the conveying direction Ha of the rectifying plate 5 in plan view.

Further, as shown in FIG. 2, each rectifying plate 5 has a first surface 5 a and a second surface 5 b opposite to the first surface 5 a. The rectifying plates 5 are tilted on the upper end side toward the downstream side in the conveying direction Ha of the substrate W, and are inclined to the conveying path H (the bottom surface M1 of the processing chamber 2) by a predetermined angle θ3 (for example, within a range of 50 degrees to 70 degrees), The gas flow direction is divided into a flow direction along the first surface 5a and a flow direction along the second surface 5b, and is separately provided on the bottom surface M1 of the processing chamber 2. The inclination angles θ3 of the plurality of rectifying plates 5 are all the same. The distance between the rectifying plate 5 and the first gas supply portion 4a (or the second gas supply portion 4b) is set to a distance capable of shielding a turbulent flow described later. As a material of the rectifying plate 5, for example, polyvinyl chloride (vinyl chloride resin) can be used.

Here, the above-mentioned processing chamber 2 is provided with a bottom chamber 2a forming a space (gas accumulation place) for storing the gas volume rectified by each rectifying plate 5 and a plurality of exhaust ports 2b for exhausting gas from the bottom chamber 2a. .

The bottom chamber 2a is located on the upstream side of the substrate W in the conveying direction Ha from all the rectifying plates 5, and is located in the processing chamber 2 and faces the blowout port 13 of the first gas supply portion 4a, that is, a corner portion (for example, The left corner of the processing chamber 2 in FIG. 1) is provided on the bottom surface M1 of the processing chamber 2. The bottom chamber 2a is formed in a long box shape, and is arranged such that the longitudinal direction and the conveyance direction Ha are orthogonal to each other in a horizontal plane. Length L1 in the longitudinal direction of the opening of the bottom chamber 2a It is shorter than half the length (setting width) L2 of the blowout port 13 of the first gas supply part 4a (or the second gas supply part 4b) and the direction in which the substrate W is transported in the direction orthogonal to the horizontal plane (setting width) L2. (For example, shorter than half the width of the substrate W).

Each exhaust port 2 b is formed in a direction orthogonal to the conveyance direction Ha of the substrate W in a horizontal plane, is formed on the bottom surface of the bottom chamber 2 a, and discharges the gas rectified by each rectifying plate 5. These exhaust ports 2b are connected to an existing exhaust device such as a factory through a connecting pipe (neither shown), and the gas in the processing chamber 2 is sucked in and exhausted from each exhaust port 2b.

Next, substrate processing (for example, drying processing) performed by the substrate processing apparatus 1 will be described.

In the substrate processing, each of the transfer rollers 3 a of the transfer unit 3 rotates, and the substrates W on the transfer rollers 3 a are transferred to a predetermined transfer direction Ha and move along the transfer path H. At the gas supply position in the transport path H, the drying gas is blown out from above by the first gas supply portion 4a, and the drying gas is also blown out from below by the second gas supply portion 4b. In this blowing state, when the substrate W passes through the gas supply position in the conveyance path H, that is, between the first gas supply portion 4a and the second gas supply portion 4b, the upper and lower surfaces of the substrate W are adhered by gas blowing. The liquid on the substrate W is blown away, and the surface of the substrate W is gradually dried. At this time, the liquid adhered to the surface (upper and lower surfaces) of the substrate W moves from the upper right corner to the lower left corner (top view in FIG. 1) of the surface of the substrate W by gas injection. Dry sequentially from the upper right corner to the lower left corner.

According to this substrate processing, until the substrate W reaches the gas supply position in the conveyance path H (before the drying process), the gas blown from the first gas supply part 4a is blown downward to the conveyance path H, and blows out from the second gas supply part 4b. The gas is blown upward toward the transport path H. The gases from the first gas supply portion 4a and the second gas supply portion 4b collide and merge with each other, and travel in the vicinity of the transfer path H of the substrate W in parallel and in the opposite direction to the transfer direction Ha. At this time, since the substrate W has not yet reached the transport path H near the first gas supply portion 4a and the second gas supply portion 4b, the roller 11 and the shaft 12 of the transfer roller 3a exist without holding the substrate W. Therefore, when a gas block from the gas confluence of the first gas supply portion 4a and the second gas supply portion 4b flows near the drum 11 or the shaft 12, the curved surface (outer peripheral surface) of the drum 11 or the shaft 12 may flow. The Conda effect occurs, and along the curved surface of the drum 11 or the shaft 12, the gas blocks from the first gas supply portion 4 a and the second gas supply portion 4 b almost go under the processing chamber 2 in one breath. After the gas directed downward from the processing chamber 2 collided with the bottom surface M1, it became a turbulent flow and directed upwards from the processing chamber 2. However, since the rectifying plate 5 is arranged so as to prevent the turbulent flow from being directed upward from the processing chamber 2, it is possible to suppress a situation where the gas collides with the back surface of the substrate W.

As shown in FIG. 3, the gas block from which the gas from the first gas supply part 4a and the second gas supply part 4b merge is divided into a flow direction along the first surface 5a of each rectifying plate 5, and conflicts with the bottom surface M1 and The direction of collision of the second surface 5b. Each gas is split along the first surface 5a and the second surface 5b, and then flows easily along the bottom surface M1 of the processing chamber 2. In FIG. 3, the flow direction along the first surface 5a is indicated by a white arrow, The flow of the second surface 5b is indicated by a black arrow. However, FIG. 3 is an image showing a flow direction of the gas, and there are portions different from the actual flow direction. The gas flowing along the first surface 5 a becomes easier to flow along the bottom surface M1 of the processing chamber 2 (see the white arrow in FIG. 3). The side of the gas along the second surface 5 b and the first surface of the adjacent rectifying plate 5 The gas flowing from one surface 5a is mixed, and it becomes easy to flow along the bottom surface M1 of the processing chamber 2 (see the black arrow in FIG. 3). Thereafter, the gas volume rectified by each of the rectifying plates 5 is stored in the bottom chamber 2a, and is discharged from each exhaust port 2b in the bottom chamber 2a. In this way, it is possible to suppress the occurrence of turbulence toward the upper side of the processing chamber 2, and thus it is possible to suppress chattering and misalignment of the substrate W.

Next, from the time when the substrate W reaches the gas supply position in the transport path H until it passes (during the drying process), the gas blown from the first gas supply unit 4a is shielded by the upper surface of the substrate W, and the gas blown from the second gas supply unit 4b The gas is shielded by the lower surface of the substrate W, and flows toward the lower side of the transport path H. This gas also becomes a flow direction reflecting the bottom of the processing chamber 2 toward the transfer path H even when the rectifying plate 5 is not present, and a turbulent flow occurs below the transfer path H to become the substrate W (especially, the transfer of the substrate W). Direction Ha downstream side) cause of flutter. However, as described above (see FIG. 3), since each rectifying plate 5 is divided along the first surface 5 a and the second surface 5 b, it is directly compared with the processing without interposing the rectifying plate 5. When the bottom surface M1 of the chamber 2 collides, it becomes easy to flow along the bottom surface M1 of the processing chamber 2. The gas flowing along the first surface 5 a becomes easier to flow along the bottom surface M1 of the processing chamber 2 (see the white arrow in FIG. 3). The side of the gas along the second surface 5 b and the first surface of the adjacent rectifying plate 5 1 side 5a The flowing gas is mixed and easily flows along the bottom surface M1 of the processing chamber 2 (see the black arrow in FIG. 3). Thereafter, the gas volume rectified by each of the rectifying plates 5 is stored in the bottom chamber 2a, and is discharged from each exhaust port 2b in the bottom chamber 2a. In this way, it is possible to suppress the occurrence of turbulence toward the upper side of the processing chamber 2, and thus it is possible to suppress chattering and misalignment of the substrate W. In addition, it is possible to prevent the liquid adhering to the substrate W from becoming a mist-like liquid, floating due to turbulence, and adhering to the lower surface of the substrate W again.

Since the rectifying plate 5 is provided on the bottom surface M1 of the processing chamber 2, a gap does not exist between the rectifying plate 5 and the bottom surface M1 of the processing chamber 2, and gas can be prevented from passing through the gap. Therefore, it is possible to suppress the occurrence of a gas flow having a more increased flow velocity through the gap toward the transport path H, and it is possible to suppress the occurrence of a new turbulent flow. However, depending on the amount of airflow, the speed, and the like, even if the rectifying plate 5 is not installed on the bottom surface M1 of the processing chamber 2 and raised from the bottom surface M1, the occurrence of turbulence may be suppressed. At this time, a gap may be created between the rectifying plate 5 and the bottom surface M1 of the processing chamber 2, but it is preferable to install the rectifying plate 5 on the bottom surface M1 of the processing chamber 2 in order to reliably suppress the occurrence of turbulence.

As described above, according to one form of implementation, the flow direction of the gas is divided into a portion along the first surface 5a by pouring the rectifying plate 5 below the transfer path H and downstream of the substrate W in the transfer direction Ha. The flow direction and the flow direction along the second surface 5b are installed, and the gas block blown from the gas supply unit 4 is prevented from going upward to the processing chamber 2. After that, the flow of gas blocks along the first surface 5a and the second surface 5b is blocked. Way adjustment. This suppresses the occurrence of the airflow toward the transport path H, thereby suppressing the occurrence of turbulence, Therefore, conveyance defects such as chattering of the substrate W and conveyance deviation can be suppressed.

Moreover, by providing the rectifying plate 5 on the bottom surface M1 of the processing chamber 2, a gap does not exist between the rectifying plate 5 and the bottom surface M1 of the processing chamber 2, and gas can be prevented from passing through the gap. Thereby, the occurrence of a turbulent flow can be suppressed by suppressing the occurrence of a gas flow that passes through the gap toward the conveyance path H, and further, it is possible to suppress the vibration of the substrate W and the conveyance deviation.

(Second Embodiment)

The second embodiment will be described with reference to FIG. 4. In the second embodiment, differences from the first embodiment (the suppression plate 6 and the liquid recovery plate 7) will be described, and other descriptions will be omitted.

As shown in FIG. 4, the substrate processing apparatus 1 according to the second embodiment includes a suppression plate 6 and a liquid recovery plate 7. The suppressing plate 6 is provided on the upper end of the bottom chamber 2a in a short-side direction, for example, to block half of the opening of the bottom chamber 2a, and suppresses the gas in the bottom chamber 2a recovered through the rectifying plate 5 from returning upward. The liquid recovery plate 7 is located above the bottom chamber 2 a at a predetermined distance from the opening of the bottom chamber 2 a and is provided on the side surface M2 of the processing chamber 2. The liquid recovery plate 7 receives and collects the liquid scattered from the substrate W passing through the conveyance path H toward the bottom chamber 2a.

The liquid system recovered by the liquid recovery plate 7 is discharged from, for example, a discharge pipe (not shown) connected to the side surface M2 of the processing chamber 2. However, if the amount of liquid adhered to the liquid recovery plate 7 is small, the discharge pipe may not be connected to the side surface M2 of the processing chamber 2 and may be recovered from the liquid by an absorber such as a cloth or a sponge when the production is stopped or during maintenance. The plate 7 wipes the liquid.

As described above, according to the second embodiment, the same effects as those of the first embodiment can be obtained. In addition, the suppression plate 6 is provided to prevent the gas in the bottom chamber 2a from returning to the top and suppress the occurrence of turbulent flow. Therefore, it is possible to reliably suppress the substrate W's chattering and transfer errors such as transfer deviation.

Furthermore, by providing the liquid recovery plate 7, the liquid scattered from the substrate W passing through the conveyance path H toward the bottom chamber 2a can be received and recovered. Therefore, it is possible to suppress the liquid from entering the respective exhaust ports 2b, and to suppress the cause of the exhaust. The turbulence of problems such as badness occurs.

(Third Embodiment)

The third embodiment will be described with reference to FIG. 5. In the third embodiment, differences from the first embodiment and the second embodiment will be described, and other descriptions will be omitted.

As shown in FIG. 5, the substrate processing apparatus 1 according to the third embodiment is provided with a plurality of rectifying plates, and the inclination angle of the rectifying plate 51 located on the most upstream side in the conveying direction Ha is different from that of other rectifying plates 5. The inclination angle of the rectifying plate 51 is provided in a conventional manner in which the sides of the first gas supply portion 4a and the second gas supply portion 4b are greatly inclined (that is, the angle between the bottom surface M1 and the second surface 51b becomes smaller). As described above, by providing the rectifying plate 51 on the most upstream side, the chattering of the substrate W can be more effectively suppressed. As described above, when the substrate W does not reach the gas supply position, the gas blocks from which the gases from the first gas supply portion 4a and the second gas supply portion 4b merge are rectified by the plurality of rectification plates 5 and rectification plates 51. Divided into the flow direction along the first surface 5a of the fairing plate 5, and the flow direction along the second surface 5b, along the bottom surface M1 of the processing chamber 2. Way to flow. In addition, in the air outlets 13 of the first gas supply part 4a and the second gas supply part 4b, the gas blown out from the position farthest from each exhaust port 2b is divided into the flow direction along the first surface 51a of the fairing plate 51. , And the flow direction along the second surface 51b. Here, the area between the second surface 51b and the bottom surface M1 of the rectifying plate 51 is narrower than the area between the second surface 5b and the bottom surface M1 of the other rectifying plate 5. Therefore, the flow velocity of the gas flowing along the second surface 51 b of the rectifying plate 51 is significantly faster than the flow velocity of the gas flowing along the second surface 5 b of the rectifying plate 5. The gas that is blown out from the exhaust port 2b farthest from the blowout port 13 of the first gas supply part 4a and the second gas supply part 4b may be expelled from a position closer to each exhaust port 2b. The gas is discharged from the exhaust ports 2b for the same amount of time. This makes it possible to more effectively suppress conveyance defects such as chattering of the substrate W and conveyance deviation.

(Other embodiments)

In the foregoing embodiment, an example has been described in which the exhaust port 2b is only on the bottom surface of the processing chamber 2, but it is not limited to this. FIG. 6 is a cross-sectional view of a substrate processing apparatus 1 having an exhaust port 20 on a wall surface above the conveyance section 3 in the processing chamber 2. As shown in FIG. 6, the exhaust port 20 is opened on a wall surface upstream of the conveyance direction Ha, and is exhausted by an exhaust device (not shown). However, as described above, the substrate W is carried into the processing chamber 2 and it is necessary to prevent the gas from below the transfer path H from reaching the processing chamber 2 before the transfer starts and reaches the gas supply position. Therefore, if exhaust is to be performed by the exhaust device of the exhaust port 20, the processing chamber 2 cannot be evacuated. The flow direction of the internal gas is concentrated on the bottom surface, so the exhaust device of the exhaust port 20 is stopped at this time. The substrate W reaches the gas supply position, and when the drying process is started, the exhaust device of the exhaust port 20 is operated. Thereby, the gas blown out from the 1st gas supply part 4a and reflected on the board | substrate W is exhausted.

As described above, even in such a structure, the same effects as those of the embodiments described above can be obtained. Furthermore, the airflow of the entire processing chamber 2 during the drying process can be adjusted, and the vibration of the substrate W during the drying process can be suppressed.

In the aforementioned embodiment, the first gas supply portion 4a (or the second gas supply portion 4b) is moved upstream from the long direction of the blow-out port 13 to the transport direction Ha in a horizontal plane orthogonal to the transport direction Ha. The side is dumped, but it is not limited to this, and it may be installed by tilting to the opposite downstream side. At this time, the positions of each rectifying plate 5 (51), the bottom chamber 2a, and each exhaust port 2b are changed in accordance with the aforementioned embodiment.

In addition, the flow rate of one or both of the first gas supply unit 4a and the second gas supply unit 4b may be adjusted by an adjustment unit (not shown) in accordance with the position of the substrate W moved in the transport path H. For example, when the front end of the substrate reaches the gas supply positions of the first gas supply part 4a and the second gas supply part 4b, both flow rates are increased, and when the rear end of the substrate W reaches the aforementioned gas supply position, both flow rates are reduced (also Contains 0) (for example, gas is blown out only during substrate processing). Thereby, the front end of the substrate W is appropriately transferred between the first gas supply portion 4a and the second gas supply portion 4b, and can be processed thereafter.

Moreover, the bottom chamber 2a is provided on the bottom surface M1 of the processing chamber 2, but it is not limited Here, for example, the bottom chamber 2 a may not be provided, and each exhaust port 2 b may be provided on the bottom surface M1 of the processing chamber 2. Furthermore, each exhaust port 2b is provided on the bottom surface of the bottom chamber 2a, but it is not limited to this, and may be provided on the side surface of the bottom chamber 2a, for example.

In each of the foregoing embodiments, an example has been described in which the number of rectifying plates 5 (including 51) is four, but the present invention is not limited to this. In accordance with the length of the first gas supply portion 4a (or the second gas supply portion 4b), It is sufficient to determine the number, as long as one or more are provided. However, by providing a plurality of rectifying plates 5, the gas can more easily flow along the bottom surface M1 of the processing chamber 2. Therefore, conveyance defects such as chattering of the substrate W and conveyance deviation can be suppressed.

Although several embodiments of the present invention have been described above, those embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the scope of patent application and its equivalent scope.

1‧‧‧ substrate processing device

2‧‧‧ treatment room

2a‧‧‧bottom chamber

2b‧‧‧ exhaust port

3‧‧‧ Transport Department

3a‧‧‧ transport roller

4‧‧‧Gas supply unit

4a‧‧‧First gas supply unit

4b‧‧‧Second gas supply unit

5‧‧‧ Rectifier

5a‧‧‧Part 1

5b‧‧‧side 2

11‧‧‧ roller

12‧‧‧ shaft

13‧‧‧ blowout

H‧‧‧ transport route

Ha‧‧‧ transport direction

M1‧‧‧ Underside

W‧‧‧ substrate

G‧‧‧Interval (interval)

Claims (13)

A substrate processing apparatus comprising: a processing chamber; a transfer unit provided in the processing chamber for transferring a substrate; and a first gas supply unit and a second gas supply unit for holding and transferring the processing chamber in the processing chamber. The method of conveying the substrate is individually provided above and below the conveying path, and blows gas toward the conveying path, respectively; and a rectifying plate is provided in the processing chamber to adjust the flow of the gas; the first gas supply unit and the second The gas supply units are each provided with a long blowout port for blowing out the gas. The longitudinal direction of the blowout port is inclined in the same direction as the conveyance direction of the substrate in a horizontal plane, and the blowout port is directed toward the conveyance direction of the substrate. The upstream side is provided so that the gas is blown out; the rectifying plate is a second surface having a first surface and an opposite surface to the first surface, is located below the conveying path, and is poured toward the downstream side of the substrate in the conveying direction. The gas flow direction is divided into a flow direction along the first surface and a flow direction along the second surface. A substrate processing apparatus comprising: a processing chamber; a transfer unit provided in the processing chamber for transferring a substrate; and a first gas supply unit and a second gas supply unit for holding and transferring the processing chamber in the processing chamber. The method of conveying the substrate is individually set in the aforementioned The upper and lower sides of the conveying path blow gas toward the conveying path, respectively; and the rectifying plate is installed in the processing chamber to adjust the flow of the gas; the first gas supply section and the second gas supply section are provided with blowouts, respectively. The long blowing direction of the gas, the long side direction of the blowing outlet is inclined in the horizontal plane in the same direction as the conveying direction of the substrate, and is arranged to blow the gas toward the upstream side of the conveying direction of the substrate; the rectifying plate, It is located below the conveyance path and is tilted to the downstream side in the conveyance direction of the substrate, and is provided on the bottom surface of the processing chamber. The substrate processing apparatus according to item 1 of the scope of patent application, wherein the rectifying plate is provided on a bottom surface of the processing chamber. The substrate processing apparatus according to item 1 of the scope of patent application, wherein the plurality of rectifying plates are provided in a manner orthogonal to the substrate transport direction in the horizontal plane; the plurality of rectifying plates are arranged along the first The aspect of the longitudinal direction of the blowout port of the 1 gas supply unit or the second gas supply unit is staggered in the conveyance direction of the substrate. The substrate processing apparatus according to item 2 of the scope of the patent application, wherein the rectifying plate is provided in a plurality of orthogonal to the transport direction of the substrate in a horizontal plane; the plurality of rectifying plates are arranged along the first 1 gas supply section or front The aspect of the longitudinal direction of the blow-out port of the second gas supply unit is staggered in the conveyance direction of the substrate. The substrate processing apparatus according to item 1 of the scope of patent application, wherein the first gas supply unit is located on the transfer path, and the processing chamber has a plurality of exhaust ports located closer to the rectifier plate. The upstream side of the substrate in the conveying direction is formed on the bottom surface of the processing chamber and is opposed to the blowout port of the first gas supply unit, and discharges the gas rectified by the rectifying plate. The substrate processing apparatus according to item 2 of the scope of patent application, wherein the first gas supply unit is located on the transfer path, and the processing chamber has a plurality of exhaust ports located closer to the rectifier plate. The upstream side of the substrate in the conveying direction is formed on the bottom surface of the processing chamber and is opposed to the blowout port of the first gas supply unit, and discharges the gas rectified by the rectifying plate. The substrate processing apparatus according to item 1 of the scope of patent application, wherein the first gas supply unit is located on the transportation path; the processing chamber includes a bottom chamber located closer to the substrate than the rectifier plate. The upstream side in the conveying direction is formed on the bottom surface of the processing chamber and is connected to the first gas supply. Where the air outlet of the feeding portion is opposed, a space for the gas volume rectified by the rectifying plate is formed. The substrate processing apparatus according to item 2 of the scope of patent application, wherein the first gas supply unit is located on the transfer path, and the processing chamber includes a bottom chamber located closer to the substrate than the rectifier plate. The upstream side in the conveying direction is formed on the bottom surface of the processing chamber and is opposite to the air outlet of the first gas supply unit to form a space for the gas volume rectified by the rectifying plate. The substrate processing apparatus according to item 4 or 5 of the scope of the patent application, wherein the rectifier plate located on the most upstream side of the substrate in the transport direction of the plurality of rectifier plates is more than a rectifier plate provided at another position, It is inclined further toward the said 1st gas supply part or the 2nd gas supply part side. The substrate processing apparatus according to item 8 or item 9 of the scope of the patent application, wherein the processing chamber has a plurality of exhaust ports provided in the bottom chamber to discharge the gas rectified by the rectifying plate. . The substrate processing apparatus according to item 8 or item 9 of the scope of application for a patent, further comprising: a suppression plate, which is installed in the bottom chamber and suppresses a situation in which the gas in the bottom chamber returns to the upper side. The substrate processing apparatus according to item 8 or item 9 of the scope of patent application, further comprising: a liquid recovery plate which is provided above the bottom chamber and receives the liquid scattered toward the bottom chamber.