TWI614917B - Wavelength conversion device - Google Patents
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- TWI614917B TWI614917B TW105100468A TW105100468A TWI614917B TW I614917 B TWI614917 B TW I614917B TW 105100468 A TW105100468 A TW 105100468A TW 105100468 A TW105100468 A TW 105100468A TW I614917 B TWI614917 B TW I614917B
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Abstract
一種波長轉換裝置包含基板、反射元件以及波長轉換元件。反射元件設置於基板上，並包含連續相材料以及複數個奈米顆粒。奈米顆粒分佈於連續相材料內。連續相材料的折射率與奈米顆粒的折射率相異。波長轉換元件設置於反射元件上。反射元件配置以將波長轉換元件傳遞而來之光線反射離開波長轉換元件。A wavelength conversion device includes a substrate, a reflective element, and a wavelength conversion element. The reflective element is disposed on the substrate and includes a continuous phase material and a plurality of nano particles. Nano particles are distributed in the continuous phase material. The refractive index of the continuous phase material differs from that of the nanoparticle. The wavelength conversion element is disposed on the reflection element. The reflecting element is configured to reflect the light transmitted from the wavelength conversion element away from the wavelength conversion element.
Description
本發明是有關於一種波長轉換裝置，特別是有關於一種色輪裝置。The present invention relates to a wavelength conversion device, and more particularly to a color wheel device.
一般傳統反射式螢光粉色輪，是在一基板上鍍覆一高反射層，再於此高反射層上塗佈螢光粉，藉以利用此反射層將受雷射激發螢光粉的出光反射至前方出光。上述高反射層一般多採用金屬反射層、多層介電層(Dielectric Multi-layer)反射膜、或金屬/介電複合層(Metal/Dielectric Multi-layer)反射膜等光學反射層結構設計。Generally, the conventional reflective fluorescent pink wheel is plated with a highly reflective layer on a substrate, and then a fluorescent powder is coated on the highly reflective layer, thereby using this reflective layer to reflect the light emitted by the laser-induced fluorescent powder. Go out to the front. The above-mentioned highly reflective layer is generally designed with an optical reflective layer structure such as a metal reflective layer, a multilayer dielectric layer (Dielectric Multi-layer) reflective film, or a metal / dielectric composite layer (Metal / Dielectric Multi-layer) reflective film.
然而，反射式螢光粉色輪的性能受基板反射率的影響甚大。因此，在設計上述高反射層時，往往需考慮入射光的角度與波長。採用多層介電層的反射結構設計，需挑戰全角度入射及全可見光波段的反射頻譜設計，導致膜層數大幅增加，鍍膜製程繁瑣耗時，膜層信賴性下降且成本大幅提高。由此可知，多層介電層反射膜往往受入射光條件的影響甚大。雖然金屬反射層較無入射角度考量，但其容易氧化、腐蝕，因此穩定度並不佳。However, the performance of the reflective fluorescent pink wheel is greatly affected by the reflectivity of the substrate. Therefore, when designing the above-mentioned highly reflective layer, it is often necessary to consider the angle and wavelength of incident light. The design of the reflective structure with multiple dielectric layers requires challenges to the design of the reflection spectrum at all angles of incidence and all visible light bands, which results in a large increase in the number of film layers, a tedious and time-consuming coating process, a decrease in film layer reliability, and a significant increase in cost. It can be seen that the reflective film of the multilayer dielectric layer is often greatly affected by the conditions of incident light. Although the metal reflection layer has no consideration of incident angle, it is easy to oxidize and corrode, so the stability is not good.
再者，螢光粉係以膠材混塗於高反射層表面上，使得螢光粉出光光子從折射率約為1.4至1.5的膠體環境入射至高反射層，不同於一般空氣(n=1)的環境設計。受布魯斯特角效應(Brewster Angle Effect)影響，大角度的入射光將有部分偏極化光穿透高反射層至底部基板吸收，使得螢光粉色輪的出光量下降。Furthermore, the fluorescent powder is mixed on the surface of the highly reflective layer with a glue material, so that the photons emitted from the fluorescent powder enter the highly reflective layer from a colloidal environment with a refractive index of about 1.4 to 1.5, which is different from ordinary air (n = 1) Environmental design. Affected by the Brewster Angle Effect, a large angle of incident light will partially pass through the highly reflective layer to the bottom substrate for absorption, making the amount of light emitted by the fluorescent pink wheel decrease.
有鑑於此，本發明之一目的在於提出一種可適用於全入射角度以及全波長頻譜的反射要求的波長轉換裝置。In view of this, it is an object of the present invention to provide a wavelength conversion device that can be applied to the reflection requirements of a full incidence angle and a full wavelength spectrum.
為了達到上述目的，依據本發明之一實施方式，一種波長轉換裝置包含基板、反射元件以及波長轉換元件。反射元件設置於基板上，並包含連續相材料以及複數個奈米顆粒。奈米顆粒分佈於連續相材料內。連續相材料的折射率與奈米顆粒的折射率相異。波長轉換元件設置於反射元件上。反射元件配置以將波長轉換元件傳遞而來之光線反射離開波長轉換元件。To achieve the above object, according to an embodiment of the present invention, a wavelength conversion device includes a substrate, a reflective element, and a wavelength conversion element. The reflective element is disposed on the substrate and includes a continuous phase material and a plurality of nano particles. Nano particles are distributed in the continuous phase material. The refractive index of the continuous phase material differs from that of the nanoparticle. The wavelength conversion element is disposed on the reflection element. The reflecting element is configured to reflect the light transmitted from the wavelength conversion element away from the wavelength conversion element.
於本發明的一或多個實施方式中，上述之連續相材料為一有機介質材料或一無機介質材料。In one or more embodiments of the present invention, the continuous phase material is an organic medium material or an inorganic medium material.
於本發明的一或多個實施方式中，上述之有機介質材料為丙烯酸樹脂、矽膠或玻璃類橡膠。In one or more embodiments of the present invention, the organic medium material is an acrylic resin, a silicon rubber, or a glass rubber.
於本發明的一或多個實施方式中，上述之有機介質材料的折射率為1.3至1.55。In one or more embodiments of the present invention, the refractive index of the organic medium material is 1.3 to 1.55.
於本發明的一或多個實施方式中，上述之無機介質材料為透明的氧化物基玻璃。In one or more embodiments of the present invention, the inorganic dielectric material is a transparent oxide-based glass.
於本發明的一或多個實施方式中，上述之無機介質材料包含矽、磷、硼、鉍、鋁、鋯、鋅、鹼金族元素以及鹼土族元素中之至少其一的組合的氧化物。In one or more embodiments of the present invention, the above-mentioned inorganic dielectric material includes an oxide of a combination of at least one of silicon, phosphorus, boron, bismuth, aluminum, zirconium, zinc, alkali gold group elements and alkaline earth group elements. .
於本發明的一或多個實施方式中，上述之無機介質材料的折射率為1.4至1.6。In one or more embodiments of the present invention, the refractive index of the inorganic dielectric material is 1.4 to 1.6.
於本發明的一或多個實施方式中，上述之波長轉換元件包含無機介質材料。In one or more embodiments of the present invention, the aforementioned wavelength conversion element includes an inorganic dielectric material.
於本發明的一或多個實施方式中，上述之反射元件的厚度為10微米至3毫米。In one or more embodiments of the present invention, the thickness of the reflective element is 10 micrometers to 3 millimeters.
於本發明的一或多個實施方式中，上述之反射元件的厚度進一步為30微米至500微米。In one or more embodiments of the present invention, the thickness of the above-mentioned reflective element is further from 30 micrometers to 500 micrometers.
於本發明的一或多個實施方式中，上述之奈米顆粒的材料包含二氧化矽、氣泡、鉭氧化物、鈦氧化物、氟化鎂以及硫酸鋇中之至少其一。In one or more embodiments of the present invention, the material of the nano particles includes at least one of silicon dioxide, bubbles, tantalum oxide, titanium oxide, magnesium fluoride, and barium sulfate.
於本發明的一或多個實施方式中，上述之奈米顆粒的粒徑為50奈米至500奈米。In one or more embodiments of the present invention, the particle size of the nano particles mentioned above ranges from 50 nm to 500 nm.
於本發明的一或多個實施方式中，上述之奈米顆粒的粒徑為100奈米至400奈米。In one or more embodiments of the present invention, the particle size of the nano particles mentioned above ranges from 100 nanometers to 400 nanometers.
於本發明的一或多個實施方式中，上述之奈米顆粒在反射元件中的濃度為30 wt%至95 wt%。In one or more embodiments of the present invention, the concentration of the nano particles in the reflective element is 30 wt% to 95 wt%.
於本發明的一或多個實施方式中，上述之奈米顆粒在反射元件中的濃度進一步為50 wt%至90 wt%。In one or more embodiments of the present invention, the concentration of the nano particles in the reflective element is further 50 wt% to 90 wt%.
於本發明的一或多個實施方式中，上述之連續相材料的折射率與奈米顆粒的折射率之間的差值大於等於0.5。In one or more embodiments of the present invention, the difference between the refractive index of the continuous phase material and the refractive index of the nano particles is greater than or equal to 0.5.
於本發明的一或多個實施方式中，上述之奈米顆粒包含複數個第一子奈米顆粒以及複數個第二子奈米顆粒。第一子奈米顆粒的折射率大於連續相材料的折射率，並且第二子奈米顆粒的折射率小於連續相材料的折射率。In one or more embodiments of the present invention, the aforementioned nano particles include a plurality of first sub-nanometer particles and a plurality of second sub-nanometer particles. The refractive index of the first sub-nanometer particles is greater than that of the continuous phase material, and the refractive index of the second sub-nanometer particles is less than that of the continuous phase material.
於本發明的一或多個實施方式中，上述之波長轉換元件為螢光粉層。In one or more embodiments of the present invention, the aforementioned wavelength conversion element is a phosphor powder layer.
綜上所述，本發明的波長轉換裝置的反射元件是將奈米顆粒分佈於連續相材料內，並藉由使連續相材料的折射率與奈米顆粒的折射率相異，使得光線可在兩者之間的介面進行反射。並且，藉由調整奈米顆粒的粒徑與濃度，可類比於習知之多層介電層的反射機制，因此可輕易符合全入射角度與全波長頻譜的反射要求。不僅如此，本發明的波長轉換裝置僅需調配適當配方之反射元件於基板上，即可有效提高波長轉換裝置整體的輸出亮度，因此還具備製程簡單，價格便宜等優點。In summary, the reflective element of the wavelength conversion device of the present invention distributes the nano particles in the continuous phase material, and makes the refractive index of the continuous phase material and the refractive index of the nano particles different, so that light can be transmitted in the The interface between the two reflects. In addition, by adjusting the particle size and concentration of nano particles, it can be compared with the conventional reflection mechanism of multiple dielectric layers, so it can easily meet the reflection requirements of the full incidence angle and the full wavelength spectrum. Not only that, the wavelength conversion device of the present invention can effectively improve the overall output brightness of the wavelength conversion device only by arranging a reflective element with a suitable formula on the substrate, so it also has the advantages of simple manufacturing process and low price.
以上所述僅係用以闡述本發明所欲解決的問題、解決問題的技術手段、及其產生的功效等等，本發明之具體細節將在下文的實施方式及相關圖式中詳細介紹。The above is only used to explain the problem to be solved by the present invention, the technical means for solving the problem, and the effects produced by it, etc. The specific details of the present invention will be described in detail in the following embodiments and related drawings.
以下將以圖式揭露本發明之複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施方式中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。In the following, a plurality of embodiments of the present invention will be disclosed graphically. For the sake of clarity, many practical details will be described in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventional structures and components will be shown in the drawings in a simple and schematic manner.
請參照第1圖，其為繪示本發明一實施方式之波長轉換裝置1的示意圖。Please refer to FIG. 1, which is a schematic diagram illustrating a wavelength conversion device 1 according to an embodiment of the present invention.
如第1圖所示，於本實施方式中，波長轉換裝置1包含基板10、反射元件12以及波長轉換元件14。反射元件12設置於基板10上，並包含連續相材料120以及複數個奈米顆粒122。奈米顆粒122分佈於連續相材料120內。連續相材料120的折射率與奈米顆粒122的折射率相異。波長轉換元件14設置於反射元件12上。也就是說，基板10、反射元件12與波長轉換元件14三者形成一個三明治堆疊結構。於一些實施方式中，波長轉換元件14為螢光粉層，但本發明的並不以此為限。螢光粉層可受光線(例如，雷射)激發而發光，以作為波長轉換裝置1的發光層。反射元件12配置以將波長轉換元件14傳遞而來之光線反射離開波長轉換元件14。As shown in FIG. 1, in this embodiment, the wavelength conversion device 1 includes a substrate 10, a reflection element 12, and a wavelength conversion element 14. The reflective element 12 is disposed on the substrate 10 and includes a continuous phase material 120 and a plurality of nano particles 122. Nano particles 122 are distributed in the continuous phase material 120. The refractive index of the continuous phase material 120 is different from the refractive index of the nano particles 122. The wavelength conversion element 14 is provided on the reflection element 12. In other words, the substrate 10, the reflective element 12, and the wavelength conversion element 14 form a sandwich stack structure. In some embodiments, the wavelength conversion element 14 is a phosphor layer, but the invention is not limited thereto. The phosphor layer may be excited by light (for example, laser) to emit light as the light emitting layer of the wavelength conversion device 1. The reflecting element 12 is configured to reflect the light transmitted from the wavelength conversion element 14 away from the wavelength conversion element 14.
根據以上結構配置可知，波長轉換裝置1的反射元件12具有奈米顆粒122分佈於連續相材料120內的結構，並連續相材料120的折射率與奈米顆粒122的折射率相異，使得光線可在兩者之間的介面進行反射。並且，若連續相材料120的折射率與奈米顆粒122的折射率的差值越大，則光線在兩者之間的介面的反射率越大，且反射角度也越大。According to the above structural configuration, it can be known that the reflective element 12 of the wavelength conversion device 1 has a structure in which the nano particles 122 are distributed in the continuous phase material 120, and the refractive index of the continuous phase material 120 and the refractive index of the nano particles 122 are different, so that light Reflection is possible at the interface between the two. In addition, if the difference between the refractive index of the continuous phase material 120 and the refractive index of the nano-particles 122 is larger, the reflectance of the interface between the light is larger, and the reflection angle is larger.
於一些實施方式中，連續相材料120的折射率與奈米顆粒122的折射率之間的差值大於等於0.5，但本發明並不以此為限。In some embodiments, the difference between the refractive index of the continuous phase material 120 and the refractive index of the nano-particles 122 is greater than or equal to 0.5, but the invention is not limited thereto.
一般來說，習知的多層介電層反射膜在設計時，若欲反射某波長的光線時，是將膜層厚度設定為欲反射之光線的四分之一波長(quarter wavelength)。根據此概念，若欲使習知的多層介電層反射膜可適用於全入射角度以及全波長頻譜的反射要求，則其膜層的數量實際上往往逼近百層。Generally speaking, when the conventional multilayer dielectric layer reflective film is designed to reflect light of a certain wavelength, the thickness of the film layer is set to a quarter wavelength of the light to be reflected. According to this concept, if the conventional multilayer dielectric layer reflective film is to be applicable to the reflection requirements of the full incidence angle and the full wavelength spectrum, the number of its film layers is often close to a hundred layers.
相比之下，本發明多個實施方式中的波長轉換裝置1所採用的奈米非連續式反射元件12，是將高折射率的奈米顆粒122分佈於低折射率的連續相材料120內(反之亦然)，並藉由調整奈米顆粒122的粒徑與濃度，以達到類比於習知的多層介電層反射膜的反射機制，並比習知的多層介電層反射膜更輕易地符合全入射角度以及全波長頻譜的反射要求。不僅如此，本發明多個實施方式中的波長轉換裝置1僅需調配適當配方之反射元件12於基板10上，即可有效提高波長轉換裝置1整體的輸出亮度，因此還具備製程簡單，價格便宜等優點。In contrast, the nano-non-continuous reflection element 12 used in the wavelength conversion device 1 in various embodiments of the present invention is to distribute high-refractive-index nano-particles 122 in a low-refractive-index continuous-phase material 120. (And vice versa), and by adjusting the particle size and concentration of the nano-particles 122 to achieve a reflection mechanism analogous to the conventional multilayer dielectric layer reflective film, and easier than the conventional multilayer dielectric layer reflective film The ground meets the reflection requirements of the full incidence angle and the full wavelength spectrum. Not only that, the wavelength conversion device 1 in various embodiments of the present invention can effectively improve the overall output brightness of the wavelength conversion device 1 only by arranging a reflective element 12 of an appropriate formula on the substrate 10, so it also has a simple manufacturing process and a low price. Etc.
更具體來說，奈米顆粒122的濃度係用來調整任兩奈米顆粒122間之連續相材料120的距離，再搭配奈米顆粒122的粒徑，可輕易在很薄的厚度之下達到各種厚度組合，進而有效地達到各種波長頻譜的反射。More specifically, the concentration of the nano-particles 122 is used to adjust the distance of the continuous phase material 120 between any two nano-particles 122, and the particle size of the nano-particles 122 can be easily achieved under a very thin thickness. Various thickness combinations can effectively achieve reflection of various wavelength spectrums.
於一些實施方式中，奈米顆粒122的粒徑為50奈米至500奈米。更具體來說，奈米顆粒122的粒徑為100奈米至400奈米。當奈米顆粒122的粒徑小於400奈米時，可讓可見光無視且可穿透於奈米顆粒122。當奈米顆粒122的粒徑大於100奈米時，可避免奈米顆粒122的表面電漿子與可見光共振吸收。In some embodiments, the particle size of the nano-particles 122 ranges from 50 nanometers to 500 nanometers. More specifically, the particle size of the nano-particles 122 is 100 to 400 nanometers. When the particle size of the nano-particles 122 is less than 400 nano-meters, visible light can be ignored and penetrate the nano-particles 122. When the particle size of the nano-particles 122 is greater than 100 nano-meters, resonance absorption of plasmons and visible light on the surface of the nano-particles 122 can be avoided.
於一些實施方式中，奈米顆粒122在反射元件12中的濃度為30 wt%至95 wt%。更具體來說，奈米顆粒122在反射元件12中的濃度進一步為50 wt%至90 wt%。In some embodiments, the concentration of the nano particles 122 in the reflective element 12 is 30 wt% to 95 wt%. More specifically, the concentration of the nano particles 122 in the reflective element 12 is further 50 wt% to 90 wt%.
於一些實施方式中，連續相材料120為有機介質材料。舉例來說，有機介質材料為丙烯酸樹脂、矽膠或玻璃類橡膠。於一些實施方式中，有機介質材料的折射率為1.3至1.55。為了增加連續相材料120的折射率與奈米顆粒122的折射率之間的差值，可以在連續相材料120中添加具有高折射率材料(例如TiOx、TaOx等)之奈米顆粒122，或導入具有低折射率材料(例如空氣、氟化鎂、二氧化矽等)之奈米顆粒122。In some embodiments, the continuous phase material 120 is an organic medium material. For example, the organic medium material is acrylic resin, silicone rubber, or glass rubber. In some embodiments, the refractive index of the organic dielectric material is 1.3 to 1.55. In order to increase the difference between the refractive index of the continuous-phase material 120 and the refractive index of the nano-particles 122, nano-particles 122 having a high-refractive index material (such as TiOx, TaOx, etc.) may be added to the continuous-phase material 120, or Nano particles 122 having a low refractive index material (for example, air, magnesium fluoride, silicon dioxide, etc.) are introduced.
於一些實施方式中，採用前述有機介質材料所製成之連續相材料120，可藉由膠液塗佈(slurry-coating)製程、滴落(dropping)製程、印刷(printing)製程等方式沉積而成。In some embodiments, the continuous phase material 120 made of the aforementioned organic medium material can be deposited by means of a slurry-coating process, a dropping process, a printing process, and the like. to make.
於一些實施方式中，奈米顆粒122的材料包含二氧化矽、氣泡、鉭氧化物、鈦氧化物、氟化鎂以及硫酸鋇中之至少其一，但本發明並不以此為限。In some embodiments, the material of the nano-particles 122 includes at least one of silicon dioxide, bubbles, tantalum oxide, titanium oxide, magnesium fluoride, and barium sulfate, but the invention is not limited thereto.
於一些實施方式中，反射元件12的厚度為10微米至3毫米。更具體來說，反射元件12的厚度進一步為30微米至500微米，但本發明並不以此為限。In some embodiments, the thickness of the reflective element 12 is 10 micrometers to 3 millimeters. More specifically, the thickness of the reflective element 12 is further from 30 micrometers to 500 micrometers, but the invention is not limited thereto.
請參照第2圖，其為繪示本發明一實施方式之波長轉換裝置1與鋁板的標準化輸出功率-雷射功率曲線圖。Please refer to FIG. 2, which is a graph showing a standardized output power-laser power curve of the wavelength conversion device 1 and an aluminum plate according to an embodiment of the present invention.
如第2圖所示，於本實施方式中，與波長轉換裝置1相比較的是鋁含量為95%的鋁板，並且兩者是在相同功率的雷射光源之下進行反射光的亮度實驗。波長轉換裝置1的反射元件12中所採用的連續相材料120為矽膠(折射率約為1.5)。反射元件12中所採用的奈米顆粒122的材料為中空玻璃珠(折射率約為1.0)，奈米顆粒122的厚度約為200奈米，且奈米顆粒122的濃度約為10 wt%至30 wt%。由第2圖可以清楚得知，實驗結果顯示本實施方式中的波長轉換裝置1的反射光的亮度(即標準化輸出功率)比鋁板的反射光的亮度高約5%左右。As shown in FIG. 2, in this embodiment, compared with the wavelength conversion device 1, an aluminum plate having an aluminum content of 95% is used, and both are subjected to a brightness test of reflected light under a laser light source of the same power. The continuous-phase material 120 used in the reflection element 12 of the wavelength conversion device 1 is silicon rubber (refractive index is about 1.5). The material of the nano particles 122 used in the reflective element 12 is hollow glass beads (refractive index is about 1.0), the thickness of the nano particles 122 is about 200 nanometers, and the concentration of the nano particles 122 is about 10 wt% to 30 wt%. As is clear from FIG. 2, the experimental results show that the brightness (ie, standardized output power) of the reflected light of the wavelength conversion device 1 in this embodiment is about 5% higher than the brightness of the reflected light of the aluminum plate.
請參照第3圖，其為繪示本發明一實施方式之波長轉換裝置1與鋁板的亮度-雷射功率曲線圖。Please refer to FIG. 3, which is a graph showing the brightness-laser power curve of the wavelength conversion device 1 and the aluminum plate according to an embodiment of the present invention.
如第3圖所示，於本實施方式中，與波長轉換裝置1相比較的同樣是鋁含量為95%的鋁板，並且兩者是在相同功率的雷射光源之下進行反射光的亮度實驗。波長轉換裝置1的反射元件12中所採用的連續相材料120為矽膠(折射率約為1.5)。反射元件12中所採用的奈米顆粒122的材料為二氧化鈦(折射率約為2.4)，奈米顆粒122的厚度約為300奈米，且奈米顆粒122的濃度約為30 wt%至50 wt%。由第3圖可以清楚得知，實驗結果顯示本實施方式中的波長轉換裝置1的反射光的亮度比鋁板的反射光的亮度高約10%左右。As shown in FIG. 3, in this embodiment, compared with the wavelength conversion device 1, an aluminum plate having an aluminum content of 95% is also used, and both of them are subjected to a brightness test of reflected light under a laser light source of the same power. . The continuous-phase material 120 used in the reflection element 12 of the wavelength conversion device 1 is silicon rubber (refractive index is about 1.5). The material of the nano particles 122 used in the reflective element 12 is titanium dioxide (refractive index is about 2.4), the thickness of the nano particles 122 is about 300 nanometers, and the concentration of the nano particles 122 is about 30 wt% to 50 wt. %. As is clear from FIG. 3, the experimental results show that the brightness of the reflected light of the wavelength conversion device 1 in this embodiment is about 10% higher than that of the aluminum plate.
此外，本實施方式與第2圖所示的實施方式相比，由於本實施方式的連續相材料120與奈米顆粒122的折射率的差值較大(約為0.9)，所以反射率的增益度以及亮度的增益度皆超過第2圖所示的實施方式，因此更驗證了本發明所宣稱的操作原理(亦即，有關於連續相材料120的折射率與奈米顆粒122的折射率的差值越大，則光線在兩者之間的介面的反射率越大的操作原理)。In addition, in this embodiment, as compared with the embodiment shown in FIG. 2, since the refractive index difference between the continuous phase material 120 and the nano particles 122 in this embodiment is larger (approximately 0.9), the gain of the reflectance is increased. The brightness and the degree of gain are higher than the embodiment shown in FIG. 2. Therefore, the operation principle claimed by the present invention (that is, the refractive index of the continuous phase material 120 and the refractive index of the nano-particles 122 is more verified). The larger the difference, the greater the reflectivity of the interface between the two rays.)
由第2圖與第3圖所示的實驗曲線圖以及以上相關實驗數據說明可知，相較於習知的鋁板，本發明多個實施方式中的波長轉換裝置1確實可有效提高整體的輸出亮度。From the experimental graphs shown in FIG. 2 and FIG. 3 and the above related experimental data, it can be known that compared with the conventional aluminum plate, the wavelength conversion device 1 in various embodiments of the present invention can indeed effectively improve the overall output brightness. .
於一些實施方式中，反射元件12之連續相材料120也可為無機介質材料。舉例來說，無機介質材料可陶瓷氧化物，例如為透明的氧化物基玻璃。更具體來說，無機介質材料包含矽、磷、硼、鉍、鋁、鋯、鋅、鹼金族元素以及鹼土族元素中之至少其一的組合的氧化物，但本發明並不以此為限。於一些實施方式中，無機介質材料的折射率為1.4至1.6。藉由以上述無機介質材料所製成的連續相材料120黏結奈米顆粒122，即可使本發明的波長轉換裝置1適用於較高功率的產品上。In some embodiments, the continuous phase material 120 of the reflective element 12 may also be an inorganic dielectric material. For example, the inorganic dielectric material may be a ceramic oxide, such as a transparent oxide-based glass. More specifically, the inorganic dielectric material includes an oxide of a combination of at least one of silicon, phosphorus, boron, bismuth, aluminum, zirconium, zinc, alkali metal elements, and alkaline earth elements, but the present invention is not limited to this. limit. In some embodiments, the refractive index of the inorganic dielectric material is 1.4 to 1.6. By bonding the nano-particles 122 with the continuous phase material 120 made of the above-mentioned inorganic dielectric material, the wavelength conversion device 1 of the present invention can be applied to higher power products.
於一些實施方式中，波長轉換元件14也包含前述之無機介質材料。具體來說，如第1圖所示，波長轉換元件14包含黏結劑(binder)140以及螢光粉顆粒142，而黏結劑140可由前述之無機介質材料所製成。藉此，可使本發明的波長轉換裝置1更適用於較高功率的產品上。In some embodiments, the wavelength conversion element 14 also includes the aforementioned inorganic dielectric material. Specifically, as shown in FIG. 1, the wavelength conversion element 14 includes a binder 140 and phosphor particles 142, and the binder 140 may be made of the aforementioned inorganic dielectric material. Thereby, the wavelength conversion device 1 of the present invention can be more suitable for higher power products.
於一些實施方式中，採用前述無機介質材料所製成之連續相材料120及/或黏結劑140可藉由塗佈製程而先沉積，再透過一高溫製程以進行燒結或熱熔而成。In some embodiments, the continuous phase material 120 and / or the adhesive 140 made of the foregoing inorganic dielectric material may be deposited by a coating process, and then sintered or hot melted through a high temperature process.
於一些實施方式中，基板10可由玻璃、金屬(例如鋁)、陶瓷或半導體材料所製成，但本發明並不以此為限。In some embodiments, the substrate 10 may be made of glass, metal (such as aluminum), ceramic, or semiconductor materials, but the present invention is not limited thereto.
於一些實施方式中，波長轉換裝置1為反射式色輪，但本發明並不以此為限。In some embodiments, the wavelength conversion device 1 is a reflective color wheel, but the invention is not limited thereto.
第4圖為繪示本發明另一實施方式之波長轉換裝置2的示意圖。FIG. 4 is a schematic diagram illustrating a wavelength conversion device 2 according to another embodiment of the present invention.
如第4圖所示，於本實施方式中，波長轉換裝置2包含基板10、反射元件22以及波長轉換元件14，其中基板10與波長轉換元件14與第1圖所示之實施方式相同，因此在此不再贅述。在此要說明的是，相較於第1圖所示之實施方式，本實施方式中的奈米顆粒222進一步包含複數個第一子奈米顆粒222a以及複數個第二子奈米顆粒222b。第一子奈米顆粒222a的折射率大於連續相材料120的折射率，並且第二子奈米顆粒222b的折射率小於連續相材料120的折射率。也就是說，於本實施方式中，第一子奈米顆粒222a與第二子奈米顆粒222b均勻地分佈於同一連續相材料120中(亦即，共用了同一連續相材料120)。反觀，對於習知的多層介電層反射膜來說，其膜層僅能堆疊，若欲達到與本實施方式類似的反射效果，其堆疊後的膜層厚度必然比本實施方式的反射元件22還大。因此，本實施方式的反射元件22相較於習知的多層介電層反射膜可以減少厚度。As shown in FIG. 4, in this embodiment, the wavelength conversion device 2 includes a substrate 10, a reflective element 22, and a wavelength conversion element 14. The substrate 10 and the wavelength conversion element 14 are the same as the embodiment shown in FIG. I will not repeat them here. It should be noted that, compared with the embodiment shown in FIG. 1, the nano particles 222 in this embodiment further include a plurality of first sub-nanometer particles 222 a and a plurality of second sub-nanometer particles 222 b. The refractive index of the first sub-nanometer particles 222 a is larger than the refractive index of the continuous-phase material 120, and the refractive index of the second sub-nanometer particles 222 b is smaller than the refractive index of the continuous-phase material 120. That is, in this embodiment, the first sub-nanometer particles 222a and the second sub-nanometer particles 222b are uniformly distributed in the same continuous phase material 120 (that is, the same continuous phase material 120 is shared). In contrast, for the conventional multilayer dielectric layer reflective film, the film layers can only be stacked. If a reflection effect similar to that of this embodiment is to be achieved, the thickness of the stacked film layer must be larger than that of the reflective element 22 of this embodiment. Still big. Therefore, the reflective element 22 of this embodiment can be reduced in thickness compared to the conventional multilayer dielectric layer reflective film.
由以上對於本發明之具體實施方式之詳述，可以明顯地看出，本發明的波長轉換裝置的反射元件是將奈米顆粒分佈於連續相材料內，並藉由使連續相材料的折射率與奈米顆粒的折射率相異，使得光線可在兩者之間的介面進行反射。並且，藉由調整奈米顆粒的粒徑與濃度，可類比於習知之多層介電層的反射機制，因此可輕易符合全入射角度與全波長頻譜的反射要求。不僅如此，本發明的波長轉換裝置僅需調配適當配方之反射元件於基板上，即可有效提高波長轉換裝置整體的輸出亮度，因此還具備製程簡單，價格便宜等優點。From the above detailed description of the specific embodiments of the present invention, it can be clearly seen that the reflection element of the wavelength conversion device of the present invention distributes nano particles in the continuous phase material, and makes the refractive index of the continuous phase material Different from the refractive index of nano particles, light can be reflected at the interface between the two. In addition, by adjusting the particle size and concentration of nano particles, it can be compared with the conventional reflection mechanism of multiple dielectric layers, so it can easily meet the reflection requirements of the full incidence angle and the full wavelength spectrum. Not only that, the wavelength conversion device of the present invention can effectively improve the overall output brightness of the wavelength conversion device only by arranging a reflective element with a suitable formula on the substrate, so it also has the advantages of simple manufacturing process and low price.
雖然本發明已以實施方式揭露如上，然其並不用以限定本發明，任何熟習此技藝者，在不脫離本發明的精神和範圍內，當可作各種的更動與潤飾，因此本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be determined by the scope of the attached patent application.
1、2‧‧‧波長轉換裝置
10‧‧‧基板
12、22‧‧‧反射元件
120‧‧‧連續相材料
122、222‧‧‧奈米顆粒
14‧‧‧波長轉換元件
140‧‧‧黏結劑
142‧‧‧螢光粉顆粒
222a‧‧‧第一子奈米顆粒
222b‧‧‧第二子奈米顆粒1, 2‧‧‧ wavelength conversion device
10‧‧‧ substrate
12, 22‧‧‧ reflective elements
120‧‧‧ continuous phase material
122, 222‧‧‧ Nano particles
14‧‧‧wavelength conversion element
140‧‧‧Binder
142‧‧‧Fluorescent powder particles
222a‧‧‧First Nanoparticle
222b‧‧‧Second particle
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之說明如下： 第1圖為繪示本發明一實施方式之波長轉換裝置的示意圖。 第2圖為繪示本發明一實施方式之波長轉換裝置與鋁板的標準化輸出功率-雷射功率曲線圖。 第3圖為繪示本發明一實施方式之波長轉換裝置與鋁板的亮度-雷射功率曲線圖。 第4圖為繪示本發明另一實施方式之波長轉換裝置的示意圖。In order to make the above and other objects, features, advantages, and embodiments of the present invention more comprehensible, the description of the drawings is as follows: FIG. 1 is a schematic diagram illustrating a wavelength conversion device according to an embodiment of the present invention. FIG. 2 is a graph showing a standardized output power-laser power curve of a wavelength conversion device and an aluminum plate according to an embodiment of the present invention. FIG. 3 is a graph showing a brightness-laser power curve of a wavelength conversion device and an aluminum plate according to an embodiment of the present invention. FIG. 4 is a schematic diagram illustrating a wavelength conversion device according to another embodiment of the present invention.
1‧‧‧波長轉換裝置 1‧‧‧wavelength conversion device
10‧‧‧基板 10‧‧‧ substrate
12‧‧‧反射元件 12‧‧‧Reflective element
120‧‧‧連續相材料 120‧‧‧ continuous phase material
122‧‧‧奈米顆粒 122‧‧‧ Nano particles
14‧‧‧波長轉換元件 14‧‧‧ Wavelength Conversion Element
140‧‧‧黏結劑 140‧‧‧Binder
142‧‧‧螢光粉顆粒 142‧‧‧Fluorescent powder particles
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- 2016-01-08 TW TW105100468A patent/TWI614917B/en active
- 2016-01-08 CN CN202110069044.XA patent/CN112782924A/en active Pending
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| TW201248933A (en) * | 2011-03-28 | 2012-12-01 | Osram Sylvania Inc | LED device utilizing quantum dots |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI739009B (en) * | 2018-06-11 | 2021-09-11 | 中強光電股份有限公司 | Wavelength conversion element, projection apparatus and manufacturing method of wavelength conversion element |
| US11424391B2 (en) | 2018-06-11 | 2022-08-23 | Coretronic Corporation | Wavelength-converting element, projection apparatus, and manufacturing method of wavelength-converting element |
| US11500278B2 (en) | 2018-06-11 | 2022-11-15 | Coretronic Corporation | Wavelength-converting element, projection apparatus, and manufacturing method of wavelength-converting element |
| US11715818B2 (en) | 2018-06-11 | 2023-08-01 | Coretronic Corporation | Wavelength-converting element, projection apparatus, and manufacturing method of wavelength-converting element |
| WO2020211091A1 (en) | 2019-04-19 | 2020-10-22 | Materion Precision Optics (Shanghai) Limited | High temperature resistant reflective layer for wavelength conversion devices |
| EP3956724A4 (en) * | 2019-04-19 | 2022-11-30 | Materion Precision Optics (Shanghai) Limited | High temperature resistant reflective layer for wavelength conversion devices |
| US11762190B2 (en) | 2019-04-19 | 2023-09-19 | Materion Precision Optics (Shanghai) Limited | High temperature resistant reflective layer for wavelength conversion devices |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201707243A (en) | 2017-02-16 |
| CN112782924A (en) | 2021-05-11 |
| CN106449947A (en) | 2017-02-22 |
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