TWI614505B - Device and method for improving the quality of primary oxide layer on ruthenium-based surface by ultraviolet light irradiation - Google Patents
Device and method for improving the quality of primary oxide layer on ruthenium-based surface by ultraviolet light irradiation Download PDFInfo
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052707 ruthenium Inorganic materials 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000523 sample Substances 0.000 claims description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000010453 quartz Substances 0.000 claims description 13
- 230000007547 defect Effects 0.000 claims description 11
- 239000013068 control sample Substances 0.000 claims description 7
- 239000002274 desiccant Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 abstract description 22
- 238000004458 analytical method Methods 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 8
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000002708 enhancing effect Effects 0.000 abstract description 3
- 238000004381 surface treatment Methods 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 abstract description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000004611 spectroscopical analysis Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- -1 helium ion Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
一種以紫外光照射提高矽基表面原生氧化層品質之快速、低成本裝置與方法，本發明係以深紫外光照射輔助矽基材表面原生氧化層之成長，有效改善矽基材表面之原生氧化層品質，可大幅降低橫截面樣品在表面處理上之困難，並可提高樣品生命期與可靠度，以及提高掃描電容顯微術（scanning capacitance microscopy, SCM）之量測再現性。藉此，本發明提出掃描電容顯微術之橫截面樣品製備技術之改良裝置與方法，並確立了控濕條件下以紫外光增強表面氧化層品質之可行性與具體步驟。在實施例中，本發明針對n型與p型樣品建立照射時間之最佳參數；在產業應用性上，本發明可大幅提升SCM於矽基樣品分析結果之穩定度及可靠度，可直接應用於積體電路樣品之截面檢測。The invention relates to a rapid and low-cost device and method for improving the quality of the primary oxide layer on the surface of the ruthenium base by ultraviolet light irradiation. The invention adopts deep ultraviolet light irradiation to assist the growth of the primary oxide layer on the surface of the ruthenium substrate, and effectively improves the primary oxide layer on the surface of the ruthenium substrate. Quality can greatly reduce the difficulty of surface treatment of cross-section samples, improve sample life and reliability, and improve the measurement reproducibility of scanning capacitance microscopy (SCM). Accordingly, the present invention proposes an improved apparatus and method for cross-sectional sample preparation technology of scanning capacitance microscopy, and establishes the feasibility and specific steps of enhancing the quality of the surface oxide layer by ultraviolet light under humidity control conditions. In an embodiment, the present invention establishes optimal parameters for irradiation time for n-type and p-type samples; in industrial applicability, the present invention can greatly improve the stability and reliability of SCM analysis results of sulfhydryl samples, and can be directly applied. Cross-section detection of integrated circuit samples.
Description
本發明係有關於一種以紫外光照射提高矽基表面原生氧化層品質之裝置與方法，尤指涉及一種在控濕環境下進行直接紫外光照射，特別係指可減少原生氧化層成長後之缺陷者。The invention relates to a device and a method for improving the quality of a primary oxide layer on a ruthenium-based surface by ultraviolet light irradiation, in particular to a direct ultraviolet light irradiation in a controlled humidity environment, in particular to reduce defects after growth of a primary oxide layer. By.
掃描電容顯微術（scanning capacitance microscopy, SCM）在半導體材料與元件分析上已發展出許多應用，其中最主要之應用為分析金屬-氧化物-半導體場效電晶體（metal-oxide-semiconductor field-effect transistor, MOSFET）之材料電性，最常見為觀察二維載子分布（two-dimensional carrier distribution）與pn接面（pn junctions）影像。近期應用該技術之研究還有砷化銦鎵（InGaAs）pn接面之光反應（參考文獻：Hui Xia, Tian-Xin Li, Heng-Jing Tang, Liang Zhu, Xue Li, Hai-Mei Gong, and Wei Lu, ″Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector″, Scientific Reports 6, 21544 (2016).）以及觀察在石墨烯上之安德森局部化（Anderson localization）現象（參考文獻：Y. Naitou and S. Ogawa, ″Anderson localization of graphene by helium ion irradiation″, Appl. Phys. Lett. 108, 171605 (2016). ）等。 掃描電容顯微鏡之基本原理係利用導電探針與矽基樣品形成金屬-氧化物-半導體（MOS）結構，如第４圖所示。在樣品端施加一微小之交流電壓，或稱調制電壓（modulation voltage），因為此一微小之電壓變化(dV)造成MOS結構中之電容值也有微小變化(dC)，即可得到微分電容訊號(dC/dV)，此即相當於電容-電壓曲線中之斜率。微分電容訊號會顯示出樣品之摻雜類型及濃度等訊息。 將掃描電容顯微術應用於矽基半導體材料之電性檢測及分析上，影響此分析技術之關鍵因素就在於樣品製備，樣品製備係影響SCM樣品優劣之重要步驟，其中樣品表面之氧化層品質更是關鍵。樣品表面之氧化層品質直接影響SCM之訊號強度與再現性，而在一般半導體產業中之氧化製程，如熱氧化與濕式氧化，都能夠得到品質良好之氧化層。 對於氧化矽（SiO2）之成長而言，有相對應之國際專利分類號H01L21/02274：在基材上形成絕緣材料，其特徵在於通過氣相沉積或氣相沉積通過氣相或氣相化合物的分解或反應形成絕緣層形成的方法，即在電漿存在下之化學氣相沉積-電漿輔助化學氣相沉積（Plasma-enhanced chemical vapor deposition, PECVD）。 然而先前技術中，少有大氣環境下利用光輔助成長SiO2之案例，多以CVD型式展現。如美國專利號US 4,988,533 A揭露了利用矽烷（Silane）在電漿環境中照射紫外光（UV）成長SiO2層之方法。而對於光與矽原生氧化層之交互作用上，先前技術亦有光輔助移除原生氧化層。如美國專利號US 6,534,412 B1揭露了利用紫外光雷射（UV laser）照射控制環境中之樣品表面，並通入氫氣以移除原生氧化層，如第５圖所示。 鑑於大多數SCM之應用都是以橫截面分析為主，因此經常需要製備橫截面樣品，但對於SCM之橫截面樣品製備來說，以傳統半導體製程成長氧化層之方法卻充滿了困難及挑戰，成本也較高，亦不符分析時效。如何能夠以較簡易之方式得到品質良好之樣品表面氧化層，為目前產 、學、研界極需要克服之課題。故，ㄧ般習用者係無法符合使用者於實際使用時之所需。Scanning capacitance microscopy (SCM) has been developed for many applications in semiconductor materials and component analysis. The most important application is the analysis of metal-oxide-semiconductor fields (metal-oxide-semiconductor field- The electrical properties of the effect transistor (MOSFET) are most commonly observed for two-dimensional carrier distribution and pn junctions. Recent research on the application of this technology is also based on the photoreaction of GaAs junctions in InGaAs (References: Hui Xia, Tian-Xin Li, Heng-Jing Tang, Liang Zhu, Xue Li, Hai-Mei Gong, and Wei Lu, "Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector", Scientific Reports 6, 21544 (2016).) and observation of Anderson localization on graphene (Reference: Y. Naitou) And S. Ogawa, "Anderson localization of graphene by helium ion irradiation", Appl. Phys. Lett. 108, 171605 (2016). The basic principle of a scanning capacitance microscope is to form a metal-oxide-semiconductor (MOS) structure using a conductive probe and a ruthenium-based sample, as shown in FIG. Apply a small AC voltage, or modulation voltage, to the sample end. Because of this small voltage change (dV), the capacitance value in the MOS structure also changes slightly (dC), and the differential capacitance signal can be obtained. dC/dV), which is equivalent to the slope in the capacitance-voltage curve. The differential capacitance signal will display information such as the doping type and concentration of the sample. Scanning capacitance microscopy is applied to the electrical detection and analysis of germanium-based semiconductor materials. The key factor affecting this analytical technique lies in sample preparation. Sample preparation is an important step affecting the quality of SCM samples. More is the key. The quality of the oxide layer on the surface of the sample directly affects the signal intensity and reproducibility of the SCM. In the general semiconductor industry, oxidation processes such as thermal oxidation and wet oxidation can obtain a good quality oxide layer. For the growth of cerium oxide (SiO2), there is a corresponding international patent classification number H01L21/02274: forming an insulating material on a substrate, characterized by vapor deposition or vapor phase deposition through a gas phase or a gas phase compound Decomposition or reaction forms a method of forming an insulating layer, that is, chemical vapor deposition-plasma-assisted chemical vapor deposition (PECVD) in the presence of a plasma. However, in the prior art, there are few cases in which the use of light-assisted growth of SiO2 in an atmospheric environment is mostly exhibited by a CVD type. A method of irradiating ultraviolet (UV) grown SiO2 layers in a plasma environment using silane (Silane) is disclosed in U.S. Patent No. 4,988,533. For the interaction of light with the native oxide layer, the prior art also has light assisted removal of the native oxide layer. U.S. Patent No. 6,534,412 B1 discloses the use of ultraviolet laser irradiation to control the surface of a sample in a controlled environment and to introduce hydrogen gas to remove the native oxide layer, as shown in FIG. Since most SCM applications are based on cross-sectional analysis, it is often necessary to prepare cross-section samples. However, for SCM cross-section sample preparation, the method of growing oxide layers in traditional semiconductor processes is full of difficulties and challenges. The cost is also high, and it is not in line with the analysis time. How to obtain a good quality surface oxide layer in a relatively simple way is a problem that needs to be overcome in the current production, learning and research circles. Therefore, the user-like users cannot meet the needs of the user in actual use.
本發明之主要目的係在於，克服習知技藝所遭遇之上述問題並提供一種利用控濕環境輔以照射紫外光之方式，在控濕環境下進行直接紫外光照射，減少原生氧化層成長後之缺陷，以直接改善矽基樣品截面之原生氧化層品質，達到良好且穩定之SCM訊號功效之以紫外光照射提高矽基表面原生氧化層品質之裝置與方法。 本發明之次要目的係在於，提供一種快速、低成本裝置與方法，以深紫外光照射輔助矽基材表面原生氧化層之成長，有效改善矽基材表面之原生氧化層品質，可大幅降低橫截面樣品在表面處理上之困難，並可提高樣品生命期與可靠度，以及提高掃描電容顯微術之量測再現性者。 為達以上之目的，本發明係一種以紫外光照射提高矽基表面原生氧化層品質之方法，其至少包含下列步驟：步驟一：產生一矽基待測樣品截面；以及步驟二：將該矽基待測樣品截面於低水蒸氣環境中照射紫外光，其波長範圍為180 nm至400 nm，且該低水蒸氣環境為相對濕度小於40%之控濕環境。 於本發明上述實施例中，該方法之功能在於減少氧化層缺陷。 本發明更係一種以紫外光照射提高矽基表面原生氧化層品質之裝置，係包括：一紫外光源，其波長範圍為180 nm至400 nm；以及一控濕樣品環境，係連接於該紫外光源上，用以承載一待處理樣品，使該待處理樣品之斷面暴露於紫外光照射下。 於本發明上述實施例中，該紫外光源係存在於該控濕樣品環境內直接照射該待處理樣品之斷面。 於本發明上述實施例中，該控濕樣品環境為相對濕度小於40%。 於本發明上述實施例中，該控濕樣品環境包括一密封石英盒及一承載該密封石英盒之升降台，且該密封石英盒中放置有該待處理樣品。 於本發明上述實施例中，該密封石英盒中係以放置一乾燥劑或以抽真空方式達成乾燥環境。 於本發明上述實施例中，該紫外光源係包括一燈座及數個設置於該燈座上之紫外光燈管。The main object of the present invention is to overcome the above problems encountered in the prior art and to provide a direct sunlight irradiation in a humidity controlled environment by using a humidity control environment and a method of irradiating ultraviolet light to reduce the growth of the primary oxide layer. Defects, devices and methods for directly improving the quality of the native oxide layer in the cross-section of the ruthenium-based sample to achieve a good and stable SCM signal effect by ultraviolet light irradiation to improve the quality of the native oxide layer on the ruthenium-based surface. A secondary object of the present invention is to provide a fast, low-cost device and method for assisting the growth of the primary oxide layer on the surface of the substrate by deep ultraviolet light irradiation, thereby effectively improving the quality of the native oxide layer on the surface of the substrate, and greatly reducing the horizontal Cross-sectional samples are difficult to surface and can improve sample life and reliability, as well as improve the reproducibility of scanning capacitance microscopy. For the above purposes, the present invention is a method for improving the quality of a native oxide layer on a ruthenium-based surface by ultraviolet light irradiation, comprising at least the following steps: Step 1: generating a ruthenium-based sample to be tested; and Step 2: The cross section of the sample to be tested is irradiated with ultraviolet light in a low water vapor environment, and its wavelength ranges from 180 nm to 400 nm, and the low water vapor environment is a controlled humidity environment with a relative humidity of less than 40%. In the above embodiments of the invention, the function of the method is to reduce oxide layer defects. The invention further relates to a device for improving the quality of a primary oxide layer on a ruthenium-based surface by ultraviolet light irradiation, comprising: an ultraviolet light source having a wavelength ranging from 180 nm to 400 nm; and a humidity controlled sample environment connected to the ultraviolet light source The upper part is used to carry a sample to be processed, and the cross section of the sample to be treated is exposed to ultraviolet light. In the above embodiment of the present invention, the ultraviolet light source is present in the moisture-controlled sample environment to directly illuminate the section of the sample to be processed. In the above embodiment of the invention, the humidity controlled sample environment has a relative humidity of less than 40%. In the above embodiment of the present invention, the moisture control sample environment comprises a sealed quartz box and a lifting platform carrying the sealed quartz box, and the sample to be processed is placed in the sealed quartz box. In the above embodiment of the present invention, the sealed quartz cell is placed in a desiccant or vacuumed to achieve a dry environment. In the above embodiment of the present invention, the ultraviolet light source comprises a lamp holder and a plurality of ultraviolet lamps disposed on the lamp holder.
請參閱『第１圖～第３圖』所示，係分別為本發明以紫外光照射提高矽基表面原生氧化層品質之裝置架構示意圖、本發明之表面照射紫外光與未照光之原生氧化層之掃描電容圖譜、以及本發明之紫外光輔助增強原生氧化層示意圖。如圖所示：本發明係提出一種以紫外光照射提高矽基表面原生氧化層品質之快速、低成本裝置與方法，透過以深紫外光照射輔助矽基材表面原生氧化層之成長，有效改善矽基材表面之原生氧化層品質，可大幅降低橫截面樣品在表面處理上之困難，並可提高樣品生命期與可靠度，以及提高掃描電容顯微術之量測再現性 ，故可作為矽基半導體樣品檢測使用。本發明所提裝置係包括一紫外光源１以及一控濕樣品環境２所構成。 上述所提之紫外光源１，其波長範圍為180 nm至400 nm，係包括一燈座１１及數個設置於該燈座１１上之紫外光燈管１２。 該控濕樣品環境２係連接於該紫外光源１上，用以承載一待處理樣品３，使該待處理樣品３之斷面暴露於紫外光照射下，透過該紫外光源１係存在於該控濕樣品環境２內直接照射該待處理樣品３之斷面。該控濕樣品環境２為相對濕度小於40%者，其包括一密封石英盒２１及一承載該密封石英盒２１之升降台２２，且該密封石英盒２１中放置有該待處理樣品３，並可放置一乾燥劑２３或運用簡單抽真空方式達成乾燥環境之目的。 當運用時，本發明係利用紫外光燈管１２（4 W，254 nm）於控濕樣品環境２下照射矽基待處理樣品３橫截面。將表面照射紫外光兩小時與未照光之原生氧化層進行比較，所得掃描電容圖譜（scanning capacitance spectroscopy, SCS）如第２圖所示，其中圖(a)為紫外光照兩小時與圖(b)為未照紫外光之樣品之SCS結果。由圖中可見，有經過紫外光照射之樣品，其平帶電壓位移（flat-band voltage shift）會比沒照過紫外光之樣品明顯較小，SCS曲線之變化也輕微許多。平帶電壓位移之大小及方向代表了氧化層中之陷阱電荷數量多寡與電荷極性。陷阱電荷數量為氧化層品質指標，陷阱電荷愈多，其品質愈差。實驗數據顯示，經過紫外光照射之樣品，其表面氧化層品質較佳。本發明同時也發現曲線之平帶電壓位移為正，代表主要的陷阱電荷為電洞，此與基板型態以及偏壓方向一致。 上述本發明以紫外光改善待處理樣品表面原生氧化層之機制如第３圖所示。通常矽基材３１之表面有一層原生氧化層３２，品質不良且缺陷極多，在一般製程中都會先蝕刻掉，再以製程方法成長更完美之氧化層。當紫外光照射在待處理樣品３表面上時，紫外光之能量使得週遭之氧分子分解成氧原子，而氧原子外殼層軌域有六個電子，所以氧原子有能力進一步捕獲電子，因而填補了原生氧化層３２中之空缺 。紫外光將氧分子分解成氧原子，氧化劑（氧原子）濃度增加，加強氧化反應，使得原生氧化層３２之SiO x結構轉變為SiO 2結構，因而讓氧化層品質變得更好。 本發明為改良SCM之橫截面樣品製備技術，提出以紫外光照射提高矽基材表面之氧化層品質，使SCM之樣品製備能夠不用借助半導體製程設備，有效降低橫截面樣品在表面處理上之困難，並提高樣品生命期與SCM量測再現性。由實驗數據指出，經兩小時深紫外光照射後，p型樣品表面之原生氧化層相對於一般之原生氧化層，在氧化層缺陷及界面缺陷上之改善率分別約為73.54%與68.98%，其中以氧化層缺陷之改善較明顯；紫外光波長對於氧化層品質之影響會比其光強度來得高 。在樣品表面氧化層之生命期方面，樣品置放兩天以後，其在氧化層缺陷及界面缺陷上之衰減率大約為12.73%及8.723%。在本發明中，確立了以紫外光照射增強表面氧化層品質之可行性與具體做法，並針對n型與p型樣品建立照射時間之最佳參數，使SCM之矽基樣品製備可以更容易，尤其對於橫截面樣品來說，減少了使用半導體製程設備成長氧化層之技術困難及挑戰，使未來SCM之矽基樣品分析可以更穩定可靠。而本發明利用控濕環境下進行直接紫外光照射，減少原生氧化層成長後之缺陷，此技術在截面樣品檢測之應用未被先前技術所揭露。 綜上所述，本發明係一種以紫外光照射提高矽基表面原生氧化層品質之裝置與方法，可有效改善習用之種種缺點，提出掃描電容顯微術（scanning capacitance microscopy, SCM）之橫截面樣品製備技術之改良裝置與方法，並確立了控濕條件下以紫外光增強表面氧化層品質之可行性與具體步驟。在實施例中，本發明針對n型與p型樣品建立照射時間之最佳參數。在產業應用性上，本發明可大幅提升SCM於矽基樣品分析結果之穩定度及可靠度，可直接應用於積體電路樣品之截面檢測，進而使本發明之□生能更進步、更實用、更符合使用者之所須，確已符合發明專利申請之要件，爰依法提出專利申請。 惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍；故，凡依本發明申請專利範圍及發明說明書內容所作之簡單的等效變化與修飾，皆應仍屬本發明專利涵蓋之範圍內。 Please refer to FIG. 1 to FIG. 3, which are schematic diagrams of the device structure for improving the quality of the primary oxide layer on the surface of the ruthenium base by ultraviolet light irradiation, and the surface of the present invention is irradiated with ultraviolet light and unilluminated primary oxide layer. A scanning capacitance map, and a schematic diagram of the ultraviolet light-assisted enhancement of the native oxide layer of the present invention. As shown in the figure, the present invention provides a rapid and low-cost device and method for improving the quality of the primary oxide layer on the surface of the ruthenium base by ultraviolet light irradiation, and effectively improves the growth of the primary oxide layer on the surface of the ruthenium substrate by deep ultraviolet light irradiation. The quality of the native oxide layer on the surface of the substrate can greatly reduce the difficulty of surface treatment of the cross-section sample, improve the life and reliability of the sample, and improve the reproducibility of scanning capacitance microscopy. Use for semiconductor sample testing. The device of the present invention comprises an ultraviolet light source 1 and a humidity controlled sample environment 2. The ultraviolet light source 1 mentioned above has a wavelength range of 180 nm to 400 nm and includes a lamp holder 11 and a plurality of ultraviolet lamps 12 disposed on the lamp holder 11. The moisture control sample environment 2 is connected to the ultraviolet light source 1 for carrying a sample to be processed 3, and the cross section of the sample to be processed 3 is exposed to ultraviolet light, and the ultraviolet light source 1 is present in the control. The section of the sample to be treated 3 is directly irradiated in the wet sample environment 2. The humidity control sample environment 2 is a relative humidity of less than 40%, and includes a sealed quartz box 21 and a lifting platform 22 carrying the sealed quartz box 21, and the sample to be processed 3 is placed in the sealed quartz box 21, and A desiccant 23 can be placed or a simple vacuum can be used to achieve a dry environment. When utilized, the present invention utilizes an ultraviolet lamp 12 (4 W, 254 nm) to illuminate the cross section of the sample to be treated 3 in the moisture controlled sample environment 2. The surface was irradiated with ultraviolet light for two hours and compared with the unilluminated native oxide layer, and the obtained scanning capacitance spectroscopy (SCS) is shown in Fig. 2, wherein (a) is ultraviolet light for two hours and (b) The SCS results for samples that are not illuminated by ultraviolet light. It can be seen from the figure that the sample with ultraviolet light has a flat-band voltage shift which is significantly smaller than that of the sample that has not been irradiated with ultraviolet light, and the SCS curve changes slightly. The magnitude and direction of the flat-band voltage displacement represent the amount of trap charge and the charge polarity in the oxide layer. The amount of trap charge is the oxide quality index, and the more trapped charges, the worse the quality. The experimental data shows that the surface oxide layer is better in the sample irradiated by ultraviolet light. The present invention also finds that the flat-band voltage displacement of the curve is positive, indicating that the main trap charge is a hole, which is consistent with the substrate type and the bias direction. The mechanism of the above invention for improving the primary oxide layer on the surface of a sample to be treated by ultraviolet light is as shown in Fig. 3. Generally, the surface of the substrate 31 has a layer of native oxide layer 32, which has poor quality and many defects, and is etched first in the general process, and then a more perfect oxide layer is formed by the process. When ultraviolet light is irradiated on the surface of the sample to be treated 3, the energy of the ultraviolet light causes the surrounding oxygen molecules to decompose into oxygen atoms, and the oxygen atom outer layer has six electrons in the orbital domain, so the oxygen atoms have the ability to further capture electrons, thus filling The void in the native oxide layer 32. The ultraviolet light decomposes the oxygen molecules into oxygen atoms, and the concentration of the oxidant (oxygen atom) increases, and the oxidation reaction is strengthened, so that the SiO x structure of the primary oxide layer 32 is converted into the SiO 2 structure, thereby making the quality of the oxide layer better. The invention aims to improve the cross-section sample preparation technology of SCM, and proposes to improve the quality of the oxide layer on the surface of the ruthenium substrate by ultraviolet light irradiation, so that the sample preparation of the SCM can effectively reduce the surface treatment difficulty of the cross-section sample without using the semiconductor process equipment. And improve sample life cycle and SCM measurement reproducibility. According to the experimental data, after two hours of deep ultraviolet light irradiation, the improvement rate of the oxide layer defects and interface defects of the native oxide layer on the surface of the p-type sample relative to the general primary oxide layer was about 73.54% and 68.98%, respectively. Among them, the improvement of the oxide layer defect is more obvious; the effect of the ultraviolet light wavelength on the quality of the oxide layer is higher than that of the light intensity. In terms of the lifetime of the oxide layer on the surface of the sample, the decay rate of oxide defects and interface defects was about 12.73% and 8.723% after the sample was placed for two days. In the present invention, the feasibility and specific practice of enhancing the quality of the surface oxide layer by ultraviolet light irradiation are established, and the optimal parameters of the irradiation time for the n-type and p-type samples are established, so that the preparation of the sulfhydryl sample of the SCM can be made easier. Especially for cross-section samples, the technical difficulties and challenges of using semiconductor process equipment to grow oxide layers are reduced, so that the future SCM sample analysis can be more stable and reliable. The present invention utilizes direct ultraviolet light irradiation in a controlled humidity environment to reduce defects after the growth of the native oxide layer. The application of this technique in cross-sectional sample detection has not been disclosed in the prior art. In summary, the present invention is a device and method for improving the quality of a native oxide layer on a ruthenium-based surface by ultraviolet light irradiation, which can effectively improve various disadvantages of the conventional use, and proposes a cross section of scanning capacitance microscopy (SCM). The improved apparatus and method for sample preparation technology, and the feasibility and specific steps of enhancing the quality of the surface oxide layer by ultraviolet light under controlled humidity conditions are established. In an embodiment, the present invention establishes optimal parameters for the illumination time for the n-type and p-type samples. In terms of industrial applicability, the invention can greatly improve the stability and reliability of the SCM sample analysis results, and can be directly applied to the cross-section detection of the integrated circuit sample, thereby making the invention more progressive and practical. More in line with the needs of the user, it has indeed met the requirements of the invention patent application, and filed a patent application according to law. However, the above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto; therefore, the simple equivalent changes and modifications made in accordance with the scope of the present invention and the contents of the invention are modified. All should remain within the scope of the invention patent.
1‧‧‧紫外光源 1‧‧‧UV source
11‧‧‧燈座 11‧‧‧ lamp holder
12‧‧‧紫外光燈管 12‧‧‧UV tube
2‧‧‧控濕樣品環境 2‧‧‧Controlled humidity sample environment
21‧‧‧密封石英盒 21‧‧‧ Sealed Quartz Box
22‧‧‧升降台 22‧‧‧ Lifting table
23‧‧‧乾燥劑 23‧‧‧Drying agent
3‧‧‧待處理樣品 3‧‧‧ pending samples
31‧‧‧矽基材 31‧‧‧矽 substrate
32‧‧‧原生氧化層 32‧‧‧Native oxide layer
第１圖，係本發明以紫外光照射提高矽基表面原生氧化層品質之裝置架構示意圖。 第２圖，係本發明之表面照射紫外光與未照光之原生氧化層之掃描電容圖譜。 第３圖，係本發明之紫外光輔助增強原生氧化層示意圖。 第４圖，係習知掃描電容顯微鏡之基本電路示意圖。 第５圖，係習知技術中利用UV laser移除原生氧化層裝置示意圖。Fig. 1 is a schematic view showing the structure of the device for improving the quality of the primary oxide layer on the surface of the ruthenium based on ultraviolet light irradiation. Figure 2 is a scanning capacitance map of the surface of the present invention irradiated with ultraviolet light and an unilluminated native oxide layer. Fig. 3 is a schematic view showing the ultraviolet light-assisted enhancement of the native oxide layer of the present invention. Figure 4 is a schematic diagram of the basic circuit of a conventional scanning capacitance microscope. Fig. 5 is a schematic view showing a conventional apparatus for removing a native oxide layer using a UV laser in the prior art.
1‧‧‧紫外光源 1‧‧‧UV source
11‧‧‧燈座 11‧‧‧ lamp holder
12‧‧‧紫外光燈管 12‧‧‧UV tube
2‧‧‧控濕樣品環境 2‧‧‧Controlled humidity sample environment
21‧‧‧密封石英盒 21‧‧‧ Sealed Quartz Box
22‧‧‧升降台 22‧‧‧ Lifting table
23‧‧‧乾燥劑 23‧‧‧Drying agent
3‧‧‧待處理樣品 3‧‧‧ pending samples
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| CN111693850A (en) * | 2020-06-17 | 2020-09-22 | 西安微电子技术研究所 | Monitoring method for anti-irradiation performance of chip |
| CN111693850B (en) * | 2020-06-17 | 2023-03-28 | 西安微电子技术研究所 | Monitoring method for anti-irradiation performance of chip |
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| TW201831905A (en) | 2018-09-01 |
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