TWI613306B - Plasma processing device and plasma processing method - Google Patents

Abstract

The present invention provides a gas supply technique that can solve problems such as swing. The two first supply units 21a supply the reactive gas into the chamber 11 from the opening 22a at a fixed first supply amount. The second supply unit 21b supplies the reactive gas into the chamber 11 from the opening 22b with a variable second supply amount. In the plasma processing, the second supply amount is adjusted by feedback control by the PEM method. As described above, since the sputtering apparatus 10 has one second supply unit 21b that performs feedback control of the second supply amount, the problem of swing due to the existence of a plurality of feedback controls can be eliminated.

Description

Plasma processing device and plasma processing method

The present invention relates to a plasma processing apparatus and a plasma processing method.

There is known a technique in which a sputtering film formation process is performed while supplying a reactive gas in a chamber (for example, Patent Document 1). As a method of controlling the amount of introduction of the reactive gas, a method of measuring (monitoring) the luminescence intensity of the element of the reactive gas or the target material in the plasma and controlling the introduction amount of the reactive gas based on the measurement result is known. . This control method is also called PEM (plasma emission monitor) method, or PEM control.

In order to form a homogeneous film on the main surface of the substrate to be transported by the sputtering film formation process, it is preferable that the distribution of the reactive gas in the chamber is uniform in the width direction of the substrate.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 4807613

As a mode in which the distribution of the reactive gas in the chamber is uniform in the width direction, a configuration in which a plurality of gas supply portions subjected to PEM control are continuously arranged in the width direction can be considered. The reason for this is that it can be expected to be virtually divided at a specific interval in the width direction. In each of the sections, the supply amount of the reactive gas is feedback-controlled, and the distribution of the reactive gas in the chamber is made uniform in the width direction. However, in this aspect, the interference of the feedback control occurs in the adjacent gas supply portion, causing the phenomenon that the actual gas supply amount vibrates around the ideal gas supply amount (hunting), and it is difficult to make the reaction. The distribution of sexual gases is uniform.

Further, in order to eliminate the wobble and to make the distribution of the reactive gas in the chamber uniform in the width direction, it is conceivable to supply the reactive gas to the chamber only by one of the PEM-controlled gas supply portions. This aspect is effective when the chamber is sufficiently small and the respective portions of the chamber are formed to be symmetrically arranged on one side in the width direction and the other side. However, when the chamber is large or the components of the chamber are formed to be asymmetrically arranged on one side and the other side in the width direction, it is difficult to make the reactive gas in the chamber by a gas supply portion. The distribution is uniform. In particular, in consideration of the fact that the chamber is enlarged in size in recent years as the size of the substrate increases, it is particularly difficult to uniformize the distribution of the reactive gas in the chamber by only one gas supply unit. Such a problem is not limited to the sputtering film formation process, but is a problem common to various plasma processes such as plasma CVD (chemical vapor deposition) treatment.

In view of such a problem, an object of the present invention is to provide a plasma processing apparatus and a plasma processing method having a gas supply technique capable of solving problems such as swing.

A plasma processing apparatus according to a first aspect of the present invention is characterized in that it supplies a gas to a processing space in which plasma is generated, and performs plasma processing on a substrate which is conveyed in the conveying direction in the processing space. Further, the transport unit further includes: a transport unit that transports the base material in the transport direction in the processing space; and at least one first supply unit that is configured from at least one first opening unit by a predetermined first fixed supply amount Supplying the gas into the processing space; at least one second supply unit that supplies the gas from the at least one second opening to the processing space by a second supply amount; and the adjustment unit is measured by the second supply unit Processing space Adjusting the amount of the gas on the center side, and performing feedback control corresponding to the measurement result to adjust the second supply amount in the plasma processing; and a plasma generating unit that generates plasma in the processing space And at least one of the first openings and the at least one second opening are alternately arranged in a width direction orthogonal to the transport direction in a plane parallel to the main surface of the substrate in the processing space unit.

A plasma processing apparatus according to a first aspect of the present invention is characterized in that the first opening portion does not become a plasma treatment toward the main surface of the base material. The non-processing region of the object is opened, and the second opening is opened toward the processing region to be subjected to the plasma treatment in the main surface of the substrate.

A plasma processing apparatus according to a first aspect of the present invention is characterized in that the base material has a rectangular shape, and the length of the base material in the width direction is 700 mm ( Mm) or more.

A plasma processing apparatus according to a fourth aspect of the present invention is characterized in that, in the plasma processing apparatus according to the first aspect of the present invention, the gas system is oxygen gas, and is sprayed in the processing space in the plasma processing. The aluminum target is plated, and alumina is formed on the substrate opposite to the aluminum target.

A plasma processing apparatus according to a fifth aspect of the present invention is the plasma processing apparatus according to any one of the first aspect to the fourth aspect of the present invention, characterized in that the adjusting portion is monitored by plasma radiation The (PEM) method adjusts the second supply amount described above.

A plasma processing method according to a sixth aspect of the present invention is characterized in that, in the process of supplying a gas to a processing space for generating plasma, plasma processing is performed on a substrate which is conveyed in the conveying direction in the processing space. And a setting step of setting a first supply amount when the gas is supplied to the processing space by at least one first opening; and a plasma processing step of performing the plasma processing; and the electricity The slurry processing step includes a first supply step of supplying the gas from the at least one first opening to the processing space by the at least one first supply unit, and the second supply step. It consists of at least One second supply unit supplies the gas to the processing space from at least one second opening in a second supply amount, and an adjustment step of measuring the amount of the gas existing on the center side of the processing space. And performing feedback control corresponding to the measurement result to adjust the second supply amount; a plasma generating step of generating plasma in the processing space; and a transferring step of transporting in the processing space along the transporting The substrate is conveyed in a direction, and the at least one first opening and the at least one are alternately arranged in a width direction orthogonal to the transport direction in a plane parallel to the main surface of the substrate in the processing space The second opening.

A plasma processing method according to a sixth aspect of the present invention, characterized in that the first opening portion does not become a plasma treatment toward the main surface of the substrate. The non-processing region of the object is opened, and the second opening is opened toward the processing region to be subjected to the plasma treatment in the main surface of the substrate.

A plasma processing method according to a sixth aspect of the present invention is the plasma processing method according to the sixth aspect of the present invention, characterized in that the substrate has a rectangular shape, and the length of the substrate in the width direction is 700 mm ( Mm) or more.

A plasma processing method according to a ninth aspect of the present invention is the plasma processing method according to the sixth aspect of the present invention, characterized in that the gas system is oxygen gas, and in the plasma processing step, in the processing space The aluminum target is sputtered, and alumina is formed on the substrate opposite to the aluminum target.

The plasma processing method according to the tenth aspect of the present invention is the plasma processing method according to any one of the sixth aspect to the ninth aspect of the present invention, characterized in that, in the adjusting step, by the electric The slurry supply monitoring (PEM) method adjusts the second supply amount described above.

In the first aspect to the tenth aspect of the present invention, at least one first opening and at least one second opening are alternately arranged along the width direction of the processing space. Further, in the plasma processing, the gas is supplied from at least one second opening portion in accordance with the second supply amount corresponding to the feedback control.

According to the present invention, since the second opening portion for supplying the gas into the processing space is not adjacent to each other by the second supply amount controlled by the feedback, the problem of the wobble caused by the adjacent second opening portion can be eliminated.

Further, in the present invention, since the gas is supplied from the first opening to the processing space by the fixed first supply amount, the first supply amount is appropriately set, even in the case where the chamber is large or in the chamber. When the configuration of each of the portions is formed such that the one side in the width direction is asymmetrically arranged on the other side, the distribution of the gas in the chamber can be made uniform.

10‧‧‧ Sputtering device

11‧‧‧ chamber

12‧‧‧ Magnets for magnetron sputtering

13‧‧‧Mobile Department

14‧‧‧floor

15‧‧‧ stage

17‧‧‧ Window Department

18‧‧‧Target/Antenna Configuration Department

19‧‧‧Sputter gas supply department

20‧‧‧ openings

21‧‧‧Reactive Gas Supply Department

21a‧‧‧1st Supply Department

21b‧‧‧2nd Supply Department

22a‧‧‧ Opening

22b‧‧‧ openings

24‧‧‧Target Keeping Department

60‧‧‧ target

74‧‧‧Substrate

75‧‧‧ Vehicles

76‧‧‧End

77‧‧‧Transportation Department

80‧‧‧High frequency antenna

90‧‧‧The Plasma Generation Department

111‧‧‧ Spectroscope

112‧‧‧Probe

113‧‧‧Processing room

151‧‧‧Refrigerant

161‧‧‧High frequency power supply

162‧‧‧Power supply for sputtering

163‧‧‧Matching circuit

181‧‧‧ Target configuration block

182‧‧‧Antenna fixed block

189‧‧‧Anode

190a‧‧‧Reactive gas supply

190b‧‧‧Reactive gas supply

191‧‧‧Sputter gas supply

192‧‧‧Flow Controller

193‧‧‧Flow controller

194a‧‧‧Stop valve

195a‧‧‧ needle valve

200‧‧‧Control Department

351‧‧‧ brake

352‧‧‧ brake

411‧‧‧Protection tube

ST1‧‧‧ steps

ST2‧‧‧ steps

ST3‧‧‧ steps

ST4‧‧‧ steps

X‧‧‧ direction

X1‧‧‧Transfer direction

X2‧‧‧Transfer direction

Y‧‧‧ direction

Z‧‧‧ direction

Fig. 1 is a side view showing a schematic configuration of a sputtering apparatus.

Fig. 2 is a side view showing an example of a high frequency antenna.

Fig. 3 is a plan view showing a schematic configuration of a sputtering apparatus.

Figure 4 is a flow chart showing the flow of processing.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same reference numerals are given to the parts having the same configurations and functions, and the repeated description is omitted in the following description. Further, the following embodiments are examples of the present invention and are not intended to limit the scope of the technical scope of the present invention. Further, in the drawings, there are cases where the size or number of each part is exaggerated or simplified for ease of understanding. Further, in the drawings, an XYZ orthogonal coordinate axis is attached to explain the direction. The +Z direction of the coordinate axis indicates the vertical direction, and the XY plane is the horizontal plane.

<1 embodiment>

<1.1 Composition of Sputtering Device>

Fig. 1 is a side view showing a schematic configuration of a sputtering apparatus 10 according to an embodiment. FIG. 2 is a side view showing an example of the high frequency antenna 80. Hereinafter, the configuration of the sputtering apparatus 10 will be described with reference to Figs. 1 and 2 .

The sputtering apparatus 10 is sputtered by an ion 60 to a target 60 such as a plate-shaped single metal aluminum. Further, a device for forming a specific film on one side main surface of a rectangular substrate 74 (substrate) is used.

The sputtering apparatus 10 includes a chamber 11 which can evacuate the inside by a vacuum pump (not shown); a sputtering gas supply unit 19 and a reactive gas supply unit 21, which are evacuated to the chamber after evacuation a plasma generating gas is introduced into the inside of the chamber 11; the target holding portion 24 holds the target 60 disposed in the chamber 11, and the transport portion 77 transports a plurality of substrates 74 of the film formation target in the transport direction X1 along a specific transport path (more Specifically, the carrier 74 is held in a plurality of carriers 75); the stage 15 is disposed above the substrate 74; and a power source 162 for sputtering.

Further, the sputtering apparatus 10 further includes a control unit 200 including a computer or a hard circuit to collectively control the operations of the respective portions of the sputtering apparatus 10, and a spectroscope 111 for measuring the probe incident on the optical fiber. The intensity of light splitting. The control unit 200 is electrically connected to each part of the sputtering apparatus 10.

The transport unit 77 supports the surface of the target 60 held by the target holding unit 24 (the surface on the +Z side) and the surface of the plurality of substrates 74 (the surface on the -Z side) by a specific distance. A plurality of carriers 75 are plate-shaped, and the carriers 75 are arranged in series along the transport path opposed to the target 60 and transported. The conveying unit 77 is configured to include a plurality of rollers that can be rotated by themselves. Among the lower surfaces of the carrier 75, the both end portions in the direction (Y direction) orthogonal to the transport direction X1 of the substrate 74 in the side view are portions where the substrate 74 is not disposed. The plurality of rollers included in the transport unit 77 support the both end portions from below. Each of the rollers rotates in a specific direction of rotation, and a plurality of carriers 75 are transported along the transport path in the transport direction X1.

More specifically, the transport unit 77 sequentially passes the portions of the transport path that are opposed to the target 60 at a predetermined time interval by the opposite ends 76 of the plurality of carriers 75 arranged along the transport path. , transporting a plurality of vehicles 75. Thereby, the luminescence spectrum of the plasma in the chamber 11 periodically changes.

Immediately below the substrate 74 (near the -Z side), a film forming shutter (not shown) that can be opened and closed is provided over at least the entire surface of the substrate 74. Further, the sputtering power source 162 is provided with a DC sputtering voltage of a negative voltage applied to the bottom plate 14 (cathode) or a pulse of a negative voltage and a positive voltage. The punching voltage is applied between the target 60 and the substrate 74 held on the lower surface side of the stage 15, and an electric field for the magnetron plasma is generated. The sputtering power source 162 is preferably driven in a voltage fixed mode. Further, the stage 15 is provided with a heater or a cooling mechanism (not shown) to control the temperature of the substrate 74.

Further, the sputtering apparatus 10 further includes a plasma generating unit 90 that generates high-frequency inductively coupled plasma of the sputtering gas and the reactive gas introduced into the chamber 11. The stage 15 is provided on the inner wall of the upper portion of the chamber 11 via a mounting member.

Further, the plasma generating unit 90 includes a linear high-frequency antenna 80 that is disposed on the side surface without coming into contact with the side surface of the target 60. The high frequency antenna 80 is composed of a tubular conductor made of metal. Further, the plasma generating unit 90 generates a high-frequency inductively coupled plasma of each of the sputtering gas and the reactive gas by the high-frequency antenna 80. Further, the conductor is not in direct contact with the plasma, the sputtering gas, and the reactive gas by the protective tube of a dielectric system such as quartz or ceramic.

Further, the sputtering apparatus 10 is made of a magnetically controlled plasma generated by a plasma generated on a surface portion of the target 60 by a static magnetic field formed by the magnetron sputtering magnet 12 described below, and a plasma generating portion 90. The mixed plasma of the generated high frequency inductively coupled plasma of the plasma generating gas is sputtered on the target 60, and a two-dimensional region (processing region) on the substrate 74 is formed into a film.

On the side of the chamber 11, an openable and closable gate 351, 352 is provided. The gates 351, 352 can be switched between an open state and a closed state. Further, the gates 351 and 352 are configured such that an opening portion of a other chamber such as a load lock chamber or an unload lock chamber (not shown) is kept airtight. The substrate 74 to be film-formed is carried into the chamber 11 from the gate 351 while being held by the carrier 75, and is formed by sputtering, and is carried out from the gate 352 to the outside of the chamber 11. When the carrier 75 holding the substrate 74 is carried into the chamber 11 (lifted from the chamber 11) from the gate 351 (352), the load chamber (unloading chamber) is kept in a vacuum state. When the substrate 74 is carried into the carrier chamber from the outside, the shutter 351 is closed, and when the substrate 74 is carried out from the unloading chamber to the outside, the shutter 352 is closed. When the substrate 74 is formed into a film, the gates 351 and 352 are closed to maintain the airtightness in the chamber 11. Before the filming process begins In the airtight state in the chamber 11, the processing chamber 113, which is the internal space of the chamber 11, is evacuated by a vacuum pump (not shown).

The sputtering gas supply unit 19 includes a sputtering gas supply source 191 that supplies the stored sputtering gas, a pipe that supplies the sputtering gas supplied from the sputtering gas supply source 191 into the chamber 11 , and a flow controller 192, which controls the flow rate of the sputtering gas via a pipe. The sputtering gas sent through the piping is supplied into the chamber 11 from the opening portion 20. The opening portion 20 is formed, for example, at a portion between the high-frequency electric wire 80 and the target 60. When the plasma generating unit 90 includes a plurality of high-frequency antennas 80, the openings 20 are provided, for example, at positions corresponding to the respective high-frequency antennas 80. As the sputtering gas, for example, an argon gas (Ar) gas of an inert gas or the like can be used.

FIG. 3 is a schematic plan view showing the arrangement of each part (particularly, the reactive gas supply unit 21) in the chamber 11.

The reactive gas supply unit 21 has a first supply unit 21a that is provided at both ends in the width direction (Y direction) of the substrate 74 from the inside of the chamber 11 (in the processing space) by a predetermined first supply amount. The opening portion 22a (first opening portion) of the side opening is supplied with a reactive gas; and the second supply portion 21b is provided in the width direction (Y direction) of the substrate 74 from the inside of the chamber 11 by the second supply amount described below. The opening portion 22b (second opening portion) opened at the center side is supplied with a reactive gas.

The first supply unit 21a includes a reactive gas supply source 190a that supplies the stored reactive gas, a pipe that transports the reactive gas supplied from the reactive gas supply source 190a into the chamber 11, and a stop valve 194a. The pipe is inserted into the pipe to adjust the opening and closing of the pipe; and the needle valve 195a is inserted into the pipe to adjust the flow rate of the reactive gas. The reactive gas sent through the pipe is supplied into the chamber 11 from the opening 22a. As the reactive gas, for example, an oxygen (O ₂ ) gas or the like can be used. As shown in FIG. 3, in the present embodiment, a description will be given of a case where the supply of the reactive gas is independently performed by the two first supply portions 21a disposed at both ends in the Y direction.

The second supply unit 21b includes a reactive gas supply source 190b that supplies the stored reactive gas, and a pipe that transports the reactive gas supplied from the reactive gas supply source 190b into the chamber 11; and the flow rate controller 193 It adjusts the flow rate of the reactive gas via piping. The reactive gas sent through the pipe is supplied into the chamber 11 from the opening 22b. As the reactive gas, for example, an oxygen (O ₂ ) gas or the like can be used.

The reactive gas supply unit 21 has the advantages of the first supply unit 21a and the second supply unit 21b as described above, and will be described in detail in the following <Effect of the <1.3 sputtering apparatus 10>.

Further, in a state where the gates 351 and 352 are closed and the processing chamber 113 is evacuated, the sputtering gas is supplied from the sputtering gas supply unit 19 into the chamber 11 and is supplied from the reactive gas supply unit 21 into the chamber 11. The reactive gas is supplied, whereby the processing chamber 113 is maintained at a fixed gas partial pressure under a fixed pressure.

Further, in a portion of the side wall of the chamber 11 in the Y direction, a window portion 17 in the sealed chamber 11 and allowing the plasma in the chamber 11 to emit light is provided, and the power can be supplied in the vicinity of the window portion. The probe 112 of the spectroscope 111 is provided in such a manner that the plasmon illuminating is incident.

The spectroscope 111 is configured to be capable of illuminating the plasma incident into the chamber 11 of the probe 112 via the window portion 17, and repeatedly detecting the intensity (spectrum) of light having a bright line wavelength of the plasma luminescence of the reactive gas. . The spectroscope 111 performs A/D (analog to digital) conversion on the measured luminescence spectrum, and supplies it to the control unit 200. That is, the spectroscope 111 repeatedly measures the luminescence spectrum of the reactive gas contained in the luminescence spectrum of the plasma, and supplies the measurement result to the control unit 200. In the case of measuring the luminescence spectrum of oxygen, light of a wavelength of 777.19 nm was measured.

The measurement interval in which the spectroscope 111 performs the measurement is set to a shorter time interval than the fluctuation period of the luminescence spectrum of the plasma (the shortest fluctuation period when the luminescence spectrum is simultaneously fluctuated in parallel in a plurality of fluctuation periods). In more detail, the measurement interval is capable of reproducing the time interval of the varying waveform of the luminescence spectrum. Specifically, the spectroscope 111 measures at a sampling frequency that is, for example, twice or more the maximum frequency of the luminescence spectrum signal. Further, the fluctuation of the luminescence spectrum of the plasma due to a known cause such as the periodic oscillation of the magnetron sputtering magnet 12 reflects the period of the phenomenon, and can be reproduced in the same cycle.

The control unit 200 controls the flow rate controller 193 by a plasma emission monitoring (PEM) method based on the luminescence spectrum of the reactive gas in the chamber 11 measured by the spectroscope 111. Thereby, the second supply amount of the reactive gas supplied into the chamber 11 from the reactive gas supply source 190b is controlled. In this way, the spectroscope 111, the flow rate controller 193, and the control unit 200 function as the following adjustment unit, that is, measure the amount of the reactive gas present in the center of the chamber 11 in the Y direction, and correspond to The feedback control of the measurement result adjusts the second supply amount in the plasma processing. As the feedback control, for example, PID (proportion integration differentiation) control can be employed.

The bottom portion of the chamber 11 is provided with an opening, and the bottom plate 14 and the magnetron sputtering magnet 12 (collectively referred to as a magnetron cathode) are mounted on the bottom portion to block the opening portion, and the housing is high. The target of the frequency antenna 80. Antenna arrangement unit 18. target. The connection portion between the antenna arrangement portion 18 and the bottom portion of the chamber 11 is ensured to be airtight by a sealing material. Therefore, the wall of the target/antenna arrangement portion 18 functions as a part of the wall of the chamber 11. A target arrangement block (target arrangement portion) 181 is provided in the target/antenna arrangement portion 18 at a position directly below the stage 15 . Accompanying this, at the target. A pair of antenna fixing blocks 182 are provided in the wall of the antenna antenna arrangement portion 18 (i.e., in the wall of the chamber 11) and on the side of the target arrangement block 181 so as to sandwich the target arrangement block 181. The magnetron cathode forms a static magnetic field near the surface of the target 60.

There is a processing chamber 113 of the chamber 11 above the target configuration block 181. In the target arrangement block 181, the magnetron sputtering magnet 12 and the magnetron sputtering magnet 12 are supported, and the magnetron sputtering magnet 12 is periodically moved in the transport direction X2 with respect to the target 60. Moving unit 13. More specifically, the moving unit 13 periodically swings the magnetron sputtering magnet 12 in the transport direction X2. A bottom plate 14 is provided on the upper surface of the magnetron sputtering magnet 12, and a stage 15 opposed to the bottom plate 14 is provided on the upper inner wall of the chamber 11. The stage 15 is grounded. Furthermore, the stage 15 can also be in a floating state that is not grounded. The position of the magnetron sputtering magnet 12 in the up-down direction is disposed on the upper surface of the target 60 placed on the bottom plate 14 provided on the upper surface thereof near the upper end of the target/antenna arrangement portion 18 (not necessarily at the same position as the upper end) The way to adjust. Again, the target 60 is The bottom plate 14 and the target holding portion 24 are held on the upper surface (surface on the +Z side) of the bottom plate 14. By providing the magnetron sputtering magnet 12 and the bottom plate 14 (collectively referred to as magnetron cathodes), the target 60 is disposed in the space of the chamber 11 facing the processing chamber 113.

The magnetron sputtering magnet 12 can form a static magnetic field (magnetostatic magnetic field) in a region including the surface of the target 60 held by the target holding portion 24, and a plasma is formed on the surface portion of the target 60. The method of diffusing the plasma of the surface portion of the target 60 is based on the partial pressure of the plasma generated by the plasma introduced into the chamber 11, or the magnetron magnetic field generated by the magnet 12 for magnetron sputtering, or the intensity of the voltage applied to the target. And change. Further, the magnetron sputtering magnet 12 is periodically moved by the moving portion 13, whereby the luminescence spectrum of the plasma in the chamber 11 periodically fluctuates.

Moreover, the boundary between the upper end of the target arrangement block 181 and the processing chamber 113 of the chamber 11 extends inward from the side wall of the target arrangement block 181 and maintains a certain distance from the vicinity of the edge of the target 60 (including the portion of the edge). The anode 189 is provided in a manner.

A high frequency antenna 80 is inserted into the antenna fixing block 182. Further, the sputtering apparatus 10 includes a high-frequency power source 161 that supplies high-frequency power to the high-frequency antenna 80. The high frequency power supply 161 is connected to the high frequency antenna 80 via the matching circuit 163.

The high frequency antenna 80 is used to support a plasma generator by magnetron sputtering, and is formed by bending a metal tubular conductor into a U shape as shown in FIG. 2, and fixing the block in two antennas. In 182, one of the states in which the "U" is upside down is set up. Furthermore, the configuration of the radio-frequency antenna 80 can be variously changed. As the shape of the high-frequency antenna 80, for example, an arc shape may be employed. Also, the number of turns of the high frequency antenna 80 is less than one week. In order to prevent the occurrence of standing waves, the length of the radio-frequency antenna 80 is preferably set to a length equal to or less than 1/4 of the wavelength of the power supplied from the high-frequency power source 161. The high frequency power is supplied from one end of the high frequency antenna and the other end is grounded. Thereby, an inductively coupled plasma is produced. When such a high-frequency antenna 80 is used, compared with a method in which an inductively coupled plasma is generated using a coil-like (spiral) antenna, since the inductance of the antenna is low, the voltage of the antenna can be lowered, so that plasma damage can be suppressed. . Moreover, by setting the length of the antenna to 1/4 or less of the wavelength of the short to high frequency, the influence due to the standing wave can be suppressed. Sputtering unevenness (unevenness) caused by uneven plasma. Moreover, since the antenna can be housed in the chamber, the plasma generation efficiency can be improved. Further, even if the number of the high-frequency antennas 80 is increased according to the substrate size of the film formation target, and the size of the target is made large, and the size of the substrate is large, the sputtering speed can be obtained. Upgrade.

Because the U-shaped high-frequency antenna is equivalent to an inductively coupled antenna with less than one turn, it has a lower inductance than an inductively coupled antenna with a number of turns of more than one week, so it can reduce the height of the two ends of the high-frequency antenna. The frequency voltage, thereby suppressing high frequency oscillations accompanying the plasma potential generated by capacitive coupling of the generated plasma. Therefore, the excess electron loss accompanying the oscillation of the plasma potential to the ground potential can be reduced, thereby lowering the plasma potential. Thereby, a thin film formation process of low ion damage on the substrate can be realized. The metal tubular conductor constituting the high-frequency antenna 80 has a function of cooling the high-frequency antenna 80 by passing the refrigerant 151 such as water through the inside of the sputtering apparatus 10. The position of the high-frequency antenna 80 in the height direction is adjusted such that the bottom of the "U" is a few centimeters higher than the height of the upper surface of the target 60, so that the plasma density near the surface of the target 60 becomes high. Further, since the temperature of the target 60, the bottom plate 14, and the like are also extremely high, it is preferably cooled by the refrigerant 151 similarly to the high-frequency antenna 80.

One of the upper end sides of the high-frequency antenna 80 penetrates the antenna fixing block 182 and protrudes from the inner side of the chamber 11. The protruding portion of the high frequency antenna 80 is covered by a protective tube 411 containing a dielectric such as quartz.

Further, even if the maximum value of the horizontal magnetic flux density of the surface of the target 60 generated by the magnetron sputtering magnet 12 is 20 to 50 mT (millisler), it is a case where the support of the high frequency inductive coupling antenna is not supported. A lower magnetic flux density (60 to 100 mT) can also produce sufficient plasma. Furthermore, the usefulness of the present invention is not impaired even without the support of the plasma generation of the high frequency inductively coupled antenna. Further, in the case of supporting the plasma generation of the high-frequency inductive coupling antenna, a high-frequency inductive coupling antenna having a number of turns of one or more turns may be used. Further, the high frequency inductive coupling antenna may be provided outside the chamber 11 without being provided. Moreover, in the configuration example of the sputtering apparatus 10 shown in FIG. 1, the substrate 74 (the carrier 75) is opposed to the target 60, The magnetron cathode and the high frequency antenna 80 are disposed above, but may be configured to be disposed below.

The stage 15 can hold the substrate 74 by a claw-shaped member or the like (not shown) provided on the lower surface of the stage 15. The carrier 75 is constituted by a plate-shaped tray or the like, and the substrate 74 is detachably held. The substrate 74 is composed of, for example, a germanium wafer or the like.

The sputtering apparatus 10 configured as described above introduces a sputtering gas into the chamber 11, and introduces a reactive gas from the first supply unit 21a at a predetermined first supply amount, and the second supply amount adjusted by the PEM method is used. The second supply unit 21b introduces a reactive gas. Then, the sputtering apparatus 10 sputters the target 60 under the atmosphere, and forms a compound of the target material and the reactive gas on the substrate 74 opposed to the target 60.

<1.2 Processing Example>

Fig. 4 is a flow chart showing an example of the processing of the embodiment. In the following, referring to FIG. 4, a flow of processing will be described. In particular, step ST1 corresponds to a setting step performed before the film forming process, and steps ST2 to ST4 correspond to a plasma processing step.

First, the first supply amount when the first supply unit 21a supplies the reactive gas into the chamber 11 from the opening 22a opened at the both end sides in the Y direction in the chamber 11 is set (step ST1: setting step). Here, in the two first supply portions 21a respectively disposed at both ends in the Y direction, the first supply amount of each may be the same or different.

The first action of the first supply unit 21a is to eliminate the density difference of the reactive gas generated between the center side in the Y direction and the both end sides in the Y direction when the reactive gas is supplied only by the second supply unit 21b. . When the second action of the first supply unit 21a is such that the arrangement in the chamber 11 is asymmetric in the Y direction and the other side, the generation is eliminated between the Y side and the other side. The density of the reactive gas is poor. Therefore, for the purpose of achieving the second action described above, the first supply amount of each of the two first supply units 21a is set to a different value. The second supply unit 21b and the sputtering gas supply unit 19 are also set as the reference. Gas supply.

The sputtering gas supply unit 19b supplies the sputtering gas from the opening 20 to the inside of the chamber 11 at a specific flow rate. The two first supply units 21a supply the reactive gas into the chamber 11 from the opening 22a at the first supply amount (first supply step). The second supply unit 21b supplies the reactive gas into the chamber 11 from the opening 22b at the second supply amount (second supply step). Moreover, in the second supply step, the second supply amount is adjusted by the feedback control (adjustment step). Thereby, an atmosphere suitable for the sputtering film formation process is formed in the chamber 11 (step ST2).

The high-frequency power source 161 supplies high-frequency power to each of the high-frequency antennas 80, and generates inductively coupled plasma in the chamber 11. Thereby, the sputtering gas and the reactive gas which have flowed into the chamber 11 are plasmad (step ST3: plasma generation step). Further, the sputtering power source 162 applies a sputtering voltage to the substrate 14. Thereby, an electric field for the magnetron plasma is generated between the target 60 and the transferred substrate 74.

When the unprocessed substrate 74 is carried into the chamber 11 via the gate 351, the transport unit 77 transports the substrate 74 in the +X direction in the transport direction X1 in the chamber 11 while being held in a horizontal position (step ST4: transport) step). Further, in a state where the sputtering gas and the reactive gas are plasmad, the substrate 74 passes through the chamber 11 while facing the target 60. Thereby, a sputtering film formation process is performed on a region (processing region) of the main surface of the substrate 74 that faces the target 60. The substrate 74 subjected to the sputtering film formation process is carried out from the chamber 11 via the gate 352. Thereby, the processing of the one substrate 74 on the sputtering apparatus 10 is completed.

<1.3 Effect of Sputtering Device 10>

In order to form a homogeneous film on the main surface of the substrate 74 by a sputtering film formation process, it is preferable that the distribution of the reactive gas in the chamber 11 is uniform in the width direction (Y direction) of the substrate 74.

As a mode in which the distribution of the reactive gas in the chamber 11 is uniform in the Y direction, a configuration in which a plurality of second supply portions 21b are continuously arranged in the Y direction can be considered (first comparative example). This is because it is possible to feedback-control the supply amount of the reactive gas in each section which is virtually divided at a specific interval in the Y direction, and to make the distribution of the reactive gas in the chamber 11 in the Y direction. Uniform. However, in this aspect, the adjacent second supply portion 21b Interference is generated, causing a phenomenon (oscillation) in which the actual gas supply amount vibrates around the ideal gas supply amount, and it is difficult to make the distribution of the reactive gas uniform.

In the aspect of the first embodiment, the sputtering apparatus 10 has one second supply unit 21b that performs feedback control of the second supply amount, unlike the first comparative example. Therefore, in the aspect of the embodiment, the swing problem caused by the existence of a plurality of feedback controls can be eliminated.

Further, as the oscillation of the surface is eliminated, the distribution of the reactive gas in the chamber 11 is uniform in the Y direction, and it is conceivable that the reactive gas is supplied into the chamber 11 by only one second supply portion 21b. (Second comparative example). This is effective when the chamber 11 is sufficiently small and the configuration of each portion in the chamber 11 is formed so as to be symmetrically arranged on the other side in the Y direction. However, when the chamber 11 is large or the components of the chamber 11 are formed to be asymmetrically arranged on the other side in the Y direction, it is difficult to make the chamber by the second supply portion 21b. The distribution of the reactive gases in 11 is uniform. In particular, in consideration of the increase in size of the chamber 11 in accordance with the increase in the size of the substrate 74 in recent years, it is particularly difficult to uniformize the distribution of the reactive gas in the chamber 11 by only the second supply portion 21b. Here, the substrate 74 is a large-sized finger, and the length of the substrate 74 in the width direction is 700 mm (mm) or more.

In the aspect of the second embodiment, the sputtering apparatus 10 has the first fixed portion 21b that performs the feedback control of the second supply amount, and has the first fixed portion. The supply amount is supplied to the two first supply portions 21a of the reactive gas. Therefore, in the aspect of the present embodiment, the first supply amount is appropriately set according to the device configuration or the like, and even when the chamber 11 is large, or the configuration of each portion in the chamber 11 is formed in the Y direction. When the one side and the other side are asymmetrically arranged, the distribution of the reactive gas in the chamber 11 can also be uniform.

In addition, when oxygen is supplied as a reactive gas while sputtering is applied to the substrate on the surface of the aluminum target, it is particularly difficult to stabilize the film quality due to the rapid oxidation of the target surface. In the case where the supply amount of the reactive gas is required to be adjusted with higher precision, the second supply amount is feedback-controlled, and the aspect of the embodiment is particularly It works.

<2 change example>

The embodiments of the present invention have been described above, but the present invention can be variously modified without departing from the spirit and scope of the invention.

In the above embodiment, the aspect in which the aluminum oxide film formation is performed by reactive sputtering has been described, but the invention is not limited thereto. The present invention is applicable to a variety of aspects in which plasma is supplied to a processing space in which plasma is generated in the processing space, and plasma processing is performed on a substrate conveyed in the conveying direction in the processing space. For example, the present invention can also be applied to a gas supply to the inside of the chamber 11 (in the processing space) and to a plasma CVD treatment of the substrate conveyed in the chamber 11.

Further, in the above-described embodiment, the description has been made of sequentially arranging the opening 22a, the opening 22b, and the opening 22a in the width direction (Y direction) of the substrate 74 in the chamber 11. Not limited to this. For example, the opening 22b, the opening 22a, and the opening 22b may be sequentially arranged in the width direction (Y direction) of the substrate 74 in the chamber 11. Further, as another example, the opening 22a, the opening 22b, the opening 22a, the opening 22b, and the opening 22a may be sequentially arranged in the width direction (Y direction) of the substrate 74 in the chamber 11. When the openings 22a and the openings 22b are alternately arranged in the width direction as described above, the plurality of openings 22b are not adjacent to each other, and the swing can be effectively prevented. Further, when the sputtering apparatus 10 includes a plurality of second supply units 21b, it is preferable that the sputtering apparatus 10 includes a plurality of spectroscopes 111 corresponding to the respective second supply units 21b. Thereby, feedback control can be performed more precisely by each of the second supply units 21b.

Further, in the above-described embodiment, the description has been made on the case where one opening 22a is constituted by one opening and one opening 22b is constituted by one opening, but the invention is not limited thereto. For example, the one opening portion 22a may be formed of a plurality of openings or the one opening portion 22b may be formed of a plurality of openings. In this case, the flow-adjusted gas branches in the middle of the supply path and is supplied from a plurality of openings.

Further, in the above-described embodiment, the opening portion 22b is opened toward the main surface of the substrate 74 in the main surface of the main surface of the substrate 74 in which the two openings 22a are directed toward the substrate 74 in the XY plane. The aspect of the processing region opening of the object to be plasma-treated is described, but is not limited thereto. For example, the two opening portions 22a may be opened toward the processing region in the main surface of the substrate 74. However, in the embodiment of the above-described embodiment in which the opening portion 22b for introducing the gas into the processing region is controlled by the second supply amount of the feedback control, it is preferable to supply the gas toward the processing region at the flow rate of the instantaneous adjustment.

Although the plasma processing apparatus and the plasma processing method of the embodiment and its modifications have been described above, the present invention is not limited to the scope of the present invention. Within the scope of the invention, the invention can be freely combined with any embodiment, or any constituent elements of the respective embodiments, or any constituent elements omitted in the respective embodiments.

11‧‧‧ chamber

20‧‧‧ openings

21‧‧‧Reactive Gas Supply Department

21a‧‧‧1st Supply Department

21b‧‧‧2nd Supply Department

22a‧‧‧ Opening

22b‧‧‧ openings

60‧‧‧ target

75‧‧‧ Vehicles

77‧‧‧Transportation Department

80‧‧‧High frequency antenna

189‧‧‧Anode

190a‧‧‧Reactive gas supply

190b‧‧‧Reactive gas supply

193‧‧‧Flow control valve

194a‧‧‧Stop valve

195a‧‧‧ needle valve

200‧‧‧Control Department

411‧‧‧Protection tube

Claims (10)

A plasma processing apparatus which is configured to supply a gas to a processing space for generating plasma, and to perform plasma processing on a substrate that is transported in a transport direction in the processing space, and includes: transporting a portion that conveys the substrate in the transport direction in the processing space; and at least one first supply portion that is supplied from the at least one first opening to the processing space at a predetermined first fixed supply amount The gas; at least one second supply unit that supplies the gas from the at least one second opening to the processing space by a second supply amount; and the adjustment unit that measures the center side of the processing space Adjusting the amount of the gas and performing feedback control corresponding to the measurement result to adjust the second supply amount in the plasma processing; and a plasma generating unit that generates plasma in the processing space; The at least one first opening and the at least one second opening are alternately arranged in a width direction orthogonal to the transport direction in a plane parallel to the main surface of the substrate in the processing space The plasma processing apparatus according to claim 1, wherein the first opening portion opens toward a non-processing region of the main surface of the substrate that is not subjected to plasma processing, and the second opening portion faces the main substrate of the substrate The processing area of the surface that becomes the object of plasma processing is opened. The plasma processing apparatus according to claim 1, wherein the base material has a rectangular shape, and a length of the base material in the width direction is 700 mm (mm) or more. A plasma processing apparatus according to claim 1, wherein The gas system is oxygen; and in the plasma treatment, the aluminum target is sputtered in the processing space, and the aluminum oxide is formed on the substrate facing the aluminum target. The plasma processing apparatus according to any one of claims 1 to 4, wherein the adjustment unit adjusts the second supply amount by a plasma emission monitoring (PEM) method. A plasma processing method characterized in that a gas is supplied to a processing space for generating plasma, and a plasma processing is performed on a substrate that is conveyed in a conveying direction in the processing space, and is provided with: a step of setting a first supply amount when the gas is supplied to the processing space by at least one first opening; and a plasma processing step of performing the plasma processing; and the plasma processing step has: a supply step of supplying the gas from the at least one first opening to the processing space by the at least one first supply unit, and the second supply step, wherein the second supply step is at least one (2) The supply unit supplies the gas to the processing space from at least one second opening in a second supply amount, and an adjustment step of measuring the amount of the gas existing on the center side of the processing space and performing corresponding Adjusting the second supply amount in response to the feedback control of the measurement result; generating a plasma in the processing space by the plasma generating step; and carrying the step in the processing space along the The substrate is transported in the transport direction; and at least one of the first openings and the at least one of the at least one of the first openings and the at least one of the plurality of first orthogonal openings in the width direction orthogonal to the transport direction is disposed in a plane parallel to the main surface of the substrate in the processing space One second opening. The plasma processing method of claim 6, wherein The first opening is opened toward a non-processing region that is not subjected to plasma treatment in the main surface of the substrate, and the second opening faces a processing region to be subjected to plasma processing in the main surface of the substrate. Opening. The plasma processing method according to claim 6, wherein the substrate has a rectangular shape, and the length of the substrate in the width direction is 700 mm (mm) or more. The plasma processing method of claim 6, wherein the gas system is oxygen; and in the plasma processing step, the aluminum target is sputtered in the processing space, and the substrate is oxidized on the substrate opposite to the aluminum target. Aluminum film formation. The plasma processing method according to any one of claims 6 to 9, wherein in the adjusting step, the second supply amount is adjusted by a plasma emission monitoring (PEM) method.