TWI613177B - 製造一基材的方法 - Google Patents
製造一基材的方法 Download PDFInfo
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- TWI613177B TWI613177B TW101142579A TW101142579A TWI613177B TW I613177 B TWI613177 B TW I613177B TW 101142579 A TW101142579 A TW 101142579A TW 101142579 A TW101142579 A TW 101142579A TW I613177 B TWI613177 B TW I613177B
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- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 238000007747 plating Methods 0.000 claims abstract description 20
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 239000000919 ceramic Substances 0.000 claims description 49
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 238000001465 metallisation Methods 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 6
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 claims description 4
- 229940071536 silver acetate Drugs 0.000 claims description 4
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 3
- 238000007496 glass forming Methods 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000004246 zinc acetate Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 2
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- 238000007772 electroless plating Methods 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 238000005245 sintering Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 229910002094 inorganic tetrachloropalladate Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 125000001273 sulfonato group Chemical class [O-]S(*)(=O)=O 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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Abstract
一種製造一基材的方法，該基材具有埋入之導電之金屬構造或鍍金屬層，其特別用於當電路板者，為了除了二度空間之平坦及平面式(亦即板形的)基材外還要使三度空間式(亦即彎曲或角形的)基材能鍍金屬到深的底，故用雷射技術將渠溝及/或凹隙做入基材中，然後在該渠溝及/或凹隙中產生該金屬構造。
Description
本發明關於具有埋入之導電金屬構造或鍍金屬層的基材的製造方法，其特別用於當電路板(Platine)。此外還關於用此方法製的基材。
在多晶片模組技術，埋入式導線構造係習知技術在該處將用厚膜技術印刷的金屬構造(導線路，電接觸點)用壓力及高溫層疊到仍未硬化的電路板(例如陶瓷膜)中。但這點只有在平坦的，即二度空間的板才可能。此外，導線路不得太高或太厚(至多10~20微米)，否則它們不再能完全印入。
本發明的目的在將申請專利範圍第1項引文部分的一種方法改善，使之除了二度空間之平坦及平面式的(亦即板形的)基材外，也能將三度空間或(亦即彎曲或角形的基材)特別是在數側連深處的底部能鍍覆金屬。
依本發明這種目的達成之道係為：用雷射技術渠溝及/或凹隙挖入該基材中，然後在該渠溝及/或凹隙中產生該金屬構造或鍍金屬層。
如此，不但可將二度空間式之平坦平面式物體鍍覆，而且特別是連三度空間式(亦即彎曲或角形的)物體在數側作深入底部的鍍覆金
屬，這些物體舉例而言，係陶瓷基材，鍍金屬層施到其上，它們當作電路板使用。如果要將晶片或整個次級回路(例如由聚亞醯胺構成者)要放上去，則這點很有意義。
因此，最好該基材有一與平坦板不同之三度空間式彎曲或角形的幾何形狀。藉使用雷射，這點係可能者，如此可有三度空間式之複雜幾何形狀。
在一較佳設計，該基材係一陶瓷基材或一塑膠基材。
在一種陶瓷基材的場合該陶瓷基材由一氮化鋁基材構成，且在做入渠溝及/或凹隙後，在渠溝及/或凹隙中用雷射分解氮化鋁產生鋁，然後該鋁用習知方法(例如無電流鍍覆)用鎳、金或銅及其合金或混合物進一步加厚。
在另一方式該陶瓷基材在做入渠溝後浸入一有機金屬溶液，例如乙酸銀溶液或乙酸銅溶液，然後將渠溝及/或凹隙用一適當之雷射照射，其中該變成元素金屬與陶瓷牢牢附著連接。
最好加一氧化物或形成玻璃的添加物如乙酸鋅或矽膠加到該金屬鹽。
在本發明一實施例在做入渠構及/或凹隙後用一金屬構成之厚膜膏充填，然後用一適當之雷射直接在雷射軌跡(即在渠溝及/或凹隙中)作燒直。
在本發明一實施例將在渠溝及/或凹隙外或在渠溝及/或凹隙中的部分區域的未照射位置洗掉或研磨掉。
在本發明一實施例該渠溝及/或凹隙中的金屬鍍層係用無
電流方式或陰極方式加強及/或用蓋金屬覆蓋。
最好該在渠溝及/或凹隙中產生的鍍金屬層與基材的表面在一平面上接合且不同該基材凸出來，因此基材可疊放。
本發明還關於一種基材，具有埋入之導電金屬構造或鍍金屬層，其係利用申請專利範圍第1~第10項任一項的方法製造者，其特徵在：該金屬構造或鍍金屬層的垂直厚度(相對於基材表面測量者)大於30微米。尤宜大於40微米，特宜大於45微米，且在重要的應用情形甚至有50微米。
利用以下所述之發明，不但能將二度空間的平坦及平面的物體鍍覆，且特別是三度空間式(亦即彎曲的物體或角形的物體)在數側作深到底的鍍覆金屬。這些物體舉例而言為陶瓷基材，其上施鍍金屬區域，它們當作電路板使用。
在此，如果要將晶片或整個次級回路(例如由聚亞醯胺構成者)要放上去，則這點很有意義。
本發明關於一種(宜為三度空間)的陶瓷基板或塑膠基板，具有埋入之導電金屬構造或鍍金屬層，由一陶瓷或有機化學的本體構成，利用雷射技術將渠溝及/或凹隙做入以容納金屬構造，然後在渠溝及/或凹隙中產生鍍金屬層，「三度空間陶瓷基材」一詞只與平坦板不同的幾何形狀。
要鍍金屬層，舉例而言，在氮化鋁構成的AlN陶瓷基材的場，在渠溝及/或凹隙中利用雷射分解產生鋁，然後該鋁用習知方法，例如無電流方式將鎳、金、銅或其合金或混合物進一步加厚。
如不用此方式，也可將具有渠溝及/或凹隙的陶瓷基材或陶
瓷體浸入有機金屬鹽溶液(例如乙酸銀或乙酸銅)，然後將渠構及/或凹隙中的金屬鹽用適當之雷射照射使金屬鹽變元素，它們與陶瓷牢牢附著接合。
為了使附著更好，金屬鹽中可加入一氧化物或形成玻璃的添加物如乙酸鋅或矽膠，如不用此方式，亦即用一般之厚膜膏作鍍金屬層，它被填充到渠溝及/或凹隙或構造中。然後用一適當雷射直接在雷射軌跡(即在渠溝及/或凹隙中)燒結。可能有的過量之未燒結部分可用水性洗濯劑藉超音波幫助再除去。
在渠溝及/或凹隙外或在渠溝及/或凹隙的部分區域中之未照射位置可簡單地洗掉或磨掉。然後在渠溝及/或凹隙中的鍍金屬層可用無電流方式或陰極方式再補強或用蓋金屬蓋住。
如此得到之鍍金屬層與陶瓷在一平面上接合，因此很適用於和電路晶片或軟式電路(例如在聚亞醯胺之上/之中)組合。
這種用雷射燒蝕並在渠溝及/或凹隙中做成導電性的陶瓷也可用於特別快速地在陶瓷中/上產生鍍金屬回路的厚型。因此可在一複製裝置將一設計圖掃瞄，並轉換成雷射指令以控制雷射。
本發明將薄膜式及厚膜式鍍金屬技術之間的斷層封閉，在具粗糙及細構造的一構件上可作厚層鍍金屬或作不同厚度的鍍金屬。
(1)‧‧‧鍍金屬層
(2)‧‧‧導線路
(3)‧‧‧電接觸點
(4)‧‧‧陶瓷基材
(4a)‧‧‧陶瓷基材
(4b)‧‧‧陶瓷基材
圖1~圖4係一陶瓷基材上的不同鍍金屬層；圖5係具一鍍金屬層的陶瓷基材；圖6、圖7係二個具有埋入之鍍金屬層的三度空間式陶瓷基材。
〔實施1〕
在一由氮化鋁構成之燒結陶瓷基材(大小114×114×2mm)用雷射做入深度50微米的渠溝及/或凹隙。在作雷射燒蝕時，由於氮化鋁受雷射光分解AlN→Al+0.5N2，產生一薄層的鋁。這層鋁用以下方式加厚：將此雷射燒蝕過的陶瓷基材放入一化學鎳槽為時30分〔Ni+2，大多呈磺酸鹽(Sulfamat)形式溶在槽中，Ni+2利用還原劑(如次磷酸鈉)在一由鈀構成之「撒晶核」的表面上還原，以後在此鈀晶核被已析出的鎳本身蓋住後，就還原成元素鎳，而在鎢上播晶核的作業，則係浸入一Pd+2溶液(大多為高度稀釋之氯化鈀(II)溶液或四氯鈀酸(II)銨溶液)。然後以無電流方式將一0.1微米的薄金層施覆，結果得到具有埋入之導電構造的陶瓷，一如例如用於作電元件/電子元件的載體之陶瓷。此導電構造宜完全位在陶瓷中，亦即不突出陶瓷的表面外。
〔實例2〕
將一種50微米深度的構造(渠溝及/或凹隙)用一種Excimer雷射以一定設計作入一燒結之陶瓷基材，它由尺寸114×114×2mm的氮化鋁構成。將此陶瓷浸入一種溶液，它由10%乙酸銀及5%聚乙烯醇(作稠化用)中。然後將此部分在70℃乾燥。用細線雷射在先前做入的凹陷部中將金屬鹽層變成金屬銀，其中由於加入熱使乙酸鹽分解。在80℃的熱除離子水中將具有乙酸銀-聚乙烯醇之未被分解的區域再溶掉。此銀層可用陰極方式用金加厚，直到渠溝和陶瓷呈平坦的接合為止。
製造本發明的基材的方法的特點為以下之方法步驟，它們要
依此順序操作。
1)利用雷射技術將渠溝及/或凹隙作入一陶瓷或有機化學的本體(陶瓷基材或塑膠基材)。
2)然後在凹隙中作入或產生鍍金屬層。
3)在渠溝及/或凹隙的鍍金屬層宜與基材木面形成一平坦之接合處，換言之，鍍金屬層埋入在基材中。
圖1~圖4顯示一陶瓷基材(4)上的不同之鍍金屬層。圖號(2)係設計成導線路(Leiterbahn，英：lead)的鍍金屬層，圖號(3)表示電接觸點。圖5顯示三度空間構造的陶瓷基材(4)，具一鍍金屬層(1)，它埋入陶瓷基材(4)中且不從表面突出來。
由於鍍金屬層係埋入者，故也可將數個各具有埋入之金屬構造的基材上下堆疊，而不會使鍍金屬層受到其上方的基材損壞。這點示於圖6。此處二個陶瓷基材(4a)(4b)設計成電路板並組合成一單元，各陶瓷基材上埋入鍍金屬層(1)且不從表面圖出來，個別的鍍金屬層(1)形成導線路及電接觸點。圖6、7顯示二個三度空間的陶瓷基材(4a)(4b)，它們具有埋入之鍍金屬層。
當然，鍍金屬層也可做入在一基材的兩面上。
(1)‧‧‧鍍金屬層
(2)‧‧‧導線路
(3)‧‧‧電接觸點
(4)‧‧‧陶瓷基材
(4a)‧‧‧陶瓷基材
(4b)‧‧‧陶瓷基材
Claims (11)
- 一種製造一基材的方法，該基材具有埋入之導電之金屬構造或鍍金屬層，其用於當電路板者，用雷射技術將渠溝及/或凹隙挖入該基材中，然後在該渠溝及/或凹隙中產生該金屬構造或鍍金屬層，該基材係一陶瓷基材，且在做入渠溝及/或凹隙後用一金屬構成之厚膜膏充填，然後用一適當之雷射直接在該渠溝及/或該凹隙中作燒結，其中該陶瓷基材由一氮化鋁基材燒結構成，且在做入渠溝及/或凹隙後，在渠溝及/或凹隙中用雷射分解該氮化鋁產生鋁，然後該鋁用無電流鍍覆方式用鎳進一步加厚，其中鎳呈Ni+2形式，利用還原劑還原成鎳，而得到埋入該陶瓷基材中的導電構造。
- 如申請專利範圍第1項之方法，其中：該基材有一與平坦板不同之三度空間式彎曲或角形的幾何形狀。
- 如申請專利範圍第1項之方法，其中：該陶瓷基材在做入渠溝後浸入一有機金屬溶液，例如乙酸銀溶液或乙酸銅溶液，然後將渠溝及/或凹隙用一適當之雷射照射，其中該變成元素金屬與陶瓷牢牢附著連接。
- 如申請專利範圍第3項之方法，其中：加一氧化物或形成玻璃的添加物如乙酸鋅或矽膠加到該金屬鹽。
- 如申請專利範圍第1或第2項的方法，其特徵在：將在渠溝及/或凹隙外或在渠溝及/或凹隙中的部分區域的未照射位置洗掉或研磨掉。
- 如申請專利範圍第1或第2項的方法，其特徵在： 該渠溝及/或凹隙中的金屬鍍層係用無電流方式或陰極方式加強及/或用蓋金屬覆蓋。
- 如申請專利範圍第1或第2項的方法，其特徵在：該在渠溝及/或凹隙中產生的鍍金屬層與基材的表面在一平面上接合且不同該基材凸出來，因此基材可疊放。
- 一種基材，具有埋入之導電金屬構造或鍍金屬層，其係利用申請專利範圍第1~第7項任一項的方法製造者，其特徵在：該金屬構造或鍍金屬層的垂直厚度(相對於基材表面測量者)大於30微米。
- 如申請專利範圍第8項之基材，其中：該垂直厚度大於40微米。
- 如申請專利範圍第9項之基材，其中：該垂直厚度大於45微米。
- 如申請專利範圍第10項之基材，其中：該垂直厚度大於50微米。
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| CN101866861B (zh) * | 2010-05-07 | 2011-10-19 | 贵州振华风光半导体有限公司 | 高可靠功率混合集成电路的集成方法 |
-
2012
- 2012-11-15 TW TW101142579A patent/TWI613177B/zh not_active IP Right Cessation
- 2012-11-16 WO PCT/EP2012/072824 patent/WO2013072457A1/de not_active Ceased
- 2012-11-16 CN CN201280056559.5A patent/CN103931277A/zh active Pending
- 2012-11-16 IN IN3687CHN2014 patent/IN2014CN03687A/en unknown
- 2012-11-16 BR BR112014011810A patent/BR112014011810A2/pt not_active Application Discontinuation
- 2012-11-16 US US14/358,252 patent/US20140290985A1/en not_active Abandoned
- 2012-11-16 RU RU2014124000/07A patent/RU2014124000A/ru not_active Application Discontinuation
- 2012-11-16 DE DE102012220948A patent/DE102012220948A1/de not_active Withdrawn
- 2012-11-16 EP EP12787011.1A patent/EP2781143A1/de not_active Withdrawn
- 2012-11-16 JP JP2014541680A patent/JP2014533775A/ja active Pending
- 2012-11-16 KR KR1020147016377A patent/KR20140094006A/ko not_active Withdrawn
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2014
- 2014-05-15 PH PH12014501099A patent/PH12014501099A1/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200623282A (en) * | 2004-07-28 | 2006-07-01 | Atotech Deutschland Gmbh | Method of manufacturing an electronic circuit assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013072457A1 (de) | 2013-05-23 |
| PH12014501099A1 (en) | 2014-08-04 |
| RU2014124000A (ru) | 2015-12-27 |
| CN103931277A (zh) | 2014-07-16 |
| KR20140094006A (ko) | 2014-07-29 |
| US20140290985A1 (en) | 2014-10-02 |
| JP2014533775A (ja) | 2014-12-15 |
| TW201341339A (zh) | 2013-10-16 |
| BR112014011810A2 (pt) | 2017-05-02 |
| IN2014CN03687A (zh) | 2015-07-03 |
| EP2781143A1 (de) | 2014-09-24 |
| DE102012220948A1 (de) | 2013-05-16 |
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