TWI604505B - Semiconductor device curing device, substrate processing system, and method of curing semiconductor device - Google Patents

Description

Semiconductor component curing device, substrate processing system System and semiconductor component curing method

The present disclosure relates to a semiconductor device curing device and a substrate processing system, and more particularly to a semiconductor device curing method.

Niobium-containing materials, such as tantalum oxide, carbon germanide or carbon-doped tantalum oxide layers, are often utilized in the fabrication of semiconductor devices. The germanium-containing layer can be deposited on the semiconductor substrate by different processes, for example, by chemical vapor deposition (CVD). For example, a semiconductor substrate is first placed in a chemical vapor deposition chamber and provided with a cerium-containing compound accompanied by an oxygen source to react with each other to deposit a cerium oxide layer over the substrate. In some embodiments, an organic telluride source can also be used to deposit a compound having a carbon oxime bond. The layers deposited by the chemical vapor deposition process can also be stacked one on another to form a composite layer. In some manufacturing processes, one or more layers formed by a deposition process may be solidified by ultraviolet (UV) radiation. Internal, stress, and/or release of internal stresses present therein. In addition, by-products (eg, hydroxides, organic debris, or bonds outside of the design) produced in some deposition processes can be reduced or eliminated by ultraviolet radiation. Curing or densification by ultraviolet radiation can also be used to reduce the heat build-up in the wafer and to reduce the manufacturing time of the semiconductor device.

Since the source of ultraviolet radiation used for curing typically generates heat, the aforementioned heat can have an effect on the semiconductor components in the process, as well as on the components that produce the source of the ultraviolet radiation (eg, reducing the lifetime of the component). Therefore, how to reduce and control the heat generated by the ultraviolet radiation source is a problem that has been faced by those of ordinary skill in the art.

In accordance with some embodiments of the present disclosure, a semiconductor device curing apparatus for a semiconductor component includes a housing and a plurality of base assemblies. The housing has a vent opening and a plurality of base caps. The cap body extends from the edge of the vent opening into the housing and each has at least one perforation. The base assembly is disposed in the housing and configured to emit ultraviolet light in a direction substantially away from the vent opening. The cap bodies are at least partially covered on the cap assembly, respectively.

In accordance with further embodiments of the present disclosure, a substrate processing system includes a chamber, a housing, and a plurality of base assemblies. The chamber has a light penetrating portion. The housing is fixed to the chamber and covers the light penetrating portion. The side of the housing facing away from the chamber has a venting opening and a plurality of base caps. The cap cover extends from the edge of the vent opening into the housing. The lamp cap assembly is disposed in the housing and configured to penetrate through the light The part emits ultraviolet rays into the chamber. The cap bodies respectively cover at least partially the lamp cap assembly and each have at least one perforation.

In accordance with still further embodiments of the present disclosure, a method of curing a semiconductor device includes placing a substrate having a dielectric layer formed thereon in a chamber. The chamber has a light penetrating portion. The dielectric layer is cured by irradiating the substrate with ultraviolet light through the light penetrating portion by a plurality of lamp cap assemblies of the ultraviolet curing system. The UV curing system includes a housing. The housing is fixed to the chamber and covers the light penetrating portion. The housing has an intake opening and a plurality of base caps on one side of the chamber. The cap cover extends from the edge of the inlet opening into the housing. The lamp cap assembly is disposed in the housing. The cap covers at least respectively on the cap assembly and each have at least one perforation. The heat generated by the base assembly is circulated through the vent opening and the perforations to the cooling gas outside the housing.

1‧‧‧Substrate processing system

10‧‧‧Curing system components

10a‧‧‧Semiconductor component curing device

12‧‧‧ second housing

14‧‧‧Light head assembly

15‧‧‧Substrate

16‧‧‧ chamber

18‧‧‧ first housing

19‧‧‧ Controller

120‧‧‧ Ventilation opening

122‧‧‧ lamp cap

124‧‧‧Exhaust opening

126‧‧‧ top position

140‧‧‧ lamp holder

142‧‧‧Microwave Generator

142a‧‧‧ top surface

142b‧‧‧ side surface

144‧‧‧second reflector

146‧‧‧ cavity

148‧‧‧Filter

160‧‧‧Light penetration

162‧‧‧ Subject

164‧‧‧ cover

166‧‧‧Substrate support

180‧‧‧First reflector

182‧‧‧ gap

184‧‧‧ side surface

1220‧‧‧Perforation

1221‧‧‧First bend

1222‧‧‧First cover body

1223‧‧‧second bend

1224‧‧‧Second cover body

1225‧‧‧ channel

1226‧‧‧Connecting Department

1228‧‧‧ openings

1400‧‧‧UV bulb

2-2‧‧‧ segments

1001~1003‧‧‧Steps

A‧‧‧ angle

D1, D2‧‧‧ diameter

S1, S2‧‧‧ distance

C1, C2‧‧‧ direction

Y‧‧‧ axis

1 is a perspective view of a substrate processing system in accordance with some embodiments of the present disclosure.

FIG. 2 is a perspective view of a semiconductor device curing device and a chamber according to some embodiments of the present disclosure.

Figure 3 is a cross-sectional view taken along line 2-2 of Figure 2.

FIG. 4 is a perspective view showing a partial structure of a casing according to some embodiments of the present disclosure.

5A-5F are partial structural top views of the housing in accordance with some embodiments of the present disclosure.

FIG. 6 is a flow chart showing a method of curing a semiconductor device in accordance with some embodiments of the present disclosure.

The following description will provide many different embodiments or embodiments to implement the subject matter of the present disclosure. Specific examples of components or arrangements will be discussed below to simplify the disclosure. Of course, these descriptions are only partial examples and the disclosure is not limited thereto. For example, the first feature is formed on or above the second feature, and the description includes not only the embodiment in which the first feature is in direct contact with the second feature, but also other features formed between the first feature and the second feature, and An embodiment in which the first feature and the second feature are not in direct contact in this situation. In addition, the disclosure may repeat the label or text in different examples. The purpose of the repetition is to simplify and clarify the description, rather than to define the different embodiments and the relationships between the configurations.

In addition, spatial relative terms such as "below", "below", "below", "above", "above" and other similar terms are used herein to facilitate the description of one element or feature and another element or The relationship of features. Spatially relative terms encompasses other orientations of the device in use or operation, in addition to the orientation depicted in the figures. That is, when the orientation of the device is different from the schema (rotated 90 degrees or at other orientations), the spatially relative terms used herein may also be interpreted accordingly.

Please refer to Figure 1. FIG. 1 is a perspective view of a substrate processing system 1 in accordance with some embodiments of the present disclosure. As shown, in the present embodiment, substrate processing system 1 includes a chamber 16 and a curing system assembly 10. The structure, function, and connection relationship between the components will be described in detail below.

Please refer to Figure 2. 2 is a perspective view of chamber 16 and curing system assembly 10 in accordance with some embodiments of the present disclosure. As shown, in the present embodiment, the chamber 16 includes a body 162 and a lid 164. The cover 164 is coupled to the body 162. In some embodiments, the cover 164 can be hinged to the body 162, but the disclosure is not limited to this connection. In addition, curing system assembly 10 includes a first housing 18 (shown as two) and a semiconductor component curing device 10a (shown as two). The cover 164 of the first housing 18 coupled to the chamber 16 is remote from the upper surface of the body 162. That is, the first housing 18 is coupled to the surface 164a of the cover 164. The semiconductor component curing devices 10a are placed above the first housing 18, respectively, and are used to process one or more substrates (not shown) located in the chamber 16. Further, the semiconductor element curing device 10a provides ultraviolet radiation. Ultraviolet radiation passes through the first housing 18 into the body 162 of the chamber 16. The one or more substrates placed in the body 162 receive the ultraviolet radiation provided by the semiconductor element curing device 10a.

In the present embodiment, the semiconductor element curing device 10a further includes a ventilation opening 120. The vent opening 120 is defined in a side of the second housing 12 that faces away from the chamber 16. That is, the vent opening 120 is formed in the top position 126 of the second housing 12. In contrast, the first housing 18 includes an air outlet opening 124. The air outlet opening 124 is formed in a side surface 184 of the first housing 18. In practical applications, the ultraviolet light bulb 1400 (see FIG. 3) of the present embodiment radiates thermal energy. Thereby, the vent opening 120 and the air outlet opening 124 are used to circulate cooling gas to the inside of the semiconductor element curing device 10a to remove excess heat in the semiconductor element curing device 10a. The temperature of the cooling gas may be room temperature or any temperature suitable for cooling the internal space of the semiconductor device curing device 10a. degree. Further, a central source of pressurized gas (not shown) provides sufficient gas flow to the vent opening 120 to ensure that the UV lamp 1400 (see Figure 3) or any of the power and components of the UV lamp 1400 can be used in this disclosure. Operate normally at operating temperatures.

In contrast, the air outlet opening 124 receives the gas discharged from the semiconductor element curing device 10a. The aforementioned exhaust gases are collected by an exhaust system (not shown). The exhaust system may include a purifier device (not shown). The cleaner device removes ozone generated by the ultraviolet light bulb 1400. In addition, cooling the ultraviolet light bulb 1400 by a cooling gas that does not contain oxygen (eg, nitrogen, argon, helium, any suitable gas, or any combination of the foregoing) may avoid ozone that may be generated by the ultraviolet light bulb 1400. However, the disclosure is not limited to the foregoing configuration. In other embodiments, the central source of pressurized gas may be configured to provide sufficient gas flow to the outlet opening 124, while the vent opening 120 may accept gas discharged from the semiconductor component curing apparatus 10a.

For details, please refer to Figure 3. Figure 3 is a cross-sectional view taken along line 2-2 of Figure 2. As shown, in the present embodiment, the chamber 16 further has a light penetrating portion 160 and a substrate support member 166. The substrate support 166 is located within the chamber 16. The light penetrating portion 160 is located between the substrate support 166 and the semiconductor element curing device 10a. For example, the light penetrating portion 160 of the chamber 16 may be a quartz window, but the disclosure is not limited thereto. In other embodiments, suitable components that pass through the ultraviolet light provided by the semiconductor device curing device 10a can be applied to the present disclosure. Further, when the substrate processing system 1 is processed, the substrate 15 is placed on the substrate support 166.

In the embodiment, the first housing 18 further includes a first reverse Projection 180. In detail, the first reflector 180 is disposed between the semiconductor element curing device 10a and the chamber 16. The lower edge of the first reflector 180 has an inner diameter D2 that is smaller than the diameter D1 of the substrate 15. The light penetrating portion 160 has a gap 182 between the bottom of the first reflector 180. The gas flow in the semiconductor element curing device 10a may surround the first reflector 180 and further flow into the first reflector 180 through the gap 182, thereby assisting the cooling of the first reflector 180.

In the present embodiment, the semiconductor element curing device 10a further includes a second housing 12, a plurality of base assemblies 14 (shown as two), and a controller 19. The second housing 12 of the semiconductor element curing device 10a is fixed to the first housing 18 and covers the light penetrating portion 160 of the chamber 16. In other words, the light penetrating portion 160 is disposed between the base assembly 14 and the substrate support 166. However, this disclosure is not limited to this. In some embodiments, the second housing 12 of the semiconductor component curing device 10a can also be directly fixed to the chamber 16 to cover the light penetrating portion 160 of the chamber 16, and the first housing 18 is omitted. Therefore, the user can elastically configure the first housing 18 depending on the actual use.

In FIG. 3, the base assembly 14 is disposed in the second housing 12, and each of the base assemblies 14 includes a base 140 and a microwave generator 142. The lower surface of the base 140 is coupled to the first reflector 180, and the base 140 includes an ultraviolet bulb 1400 and a second reflector 144. In the present embodiment, the ultraviolet bulb 1400 has an elongated tube for generating ultraviolet radiation, and each of the base assemblies 14 includes one ultraviolet bulb 1400. However, the structural configuration of the ultraviolet light bulb 1400 of the present disclosure is not limited thereto. In other embodiments, the shape of the ultraviolet light bulb 1400 can be any suitable shape, and the number of the ultraviolet light bulbs 1400 can also be plural.

In some embodiments, the ultraviolet light bulb 1400 can be a microwave arc lamp, a pulsed xenon flash lamp, a high power ultraviolet light emitting diode array, or any suitable component. In some embodiments, the ultraviolet light bulb 1400 can be a sealed plasma light bulb filled with one or more gases (eg, gases such as helium or mercury), and one or more of the foregoing gases can be excited by the microwave generator 142. For example, a high voltage power supply can provide a voltage to the microwave generator 142, whereby the microwave generator 142 can generate microwaves to excite the gas located in the ultraviolet light bulb 1400, thereby generating ultraviolet radiation for curing the processed substrate. 15.

Further, the ultraviolet bulb 1400 can be designed to emit broadband ultraviolet rays. For example, the aforementioned ultraviolet light may have a wavelength of substantially from about 180 nm to about 400 nm, but the present disclosure is not limited to this bandwidth. In addition, the gas selected for use in the ultraviolet bulb 1400 can be substantially determined by the illumination wavelength emitted by the ultraviolet bulb 1400. Since oxygen of a shorter wavelength is likely to cause generation of ozone when oxygen is present in the semiconductor element curing device 10a. Therefore, the ultraviolet light emitted from the ultraviolet bulb 1400 is adjusted to generate broadband ultraviolet light having a wavelength of 200 nm or more to avoid generation of ozone during the curing process.

Further, the second reflector 144 is placed over the ultraviolet bulb 1400, surrounds the ultraviolet bulb 1400, and is adapted to direct ultraviolet rays emitted from the ultraviolet bulb 1400 through the light penetrating portion 160 toward the substrate support 166. In some embodiments, the appearance of the second reflector 144 may be a reflective cup, but the disclosure is not limited thereto. In addition, the output or intensity of the ultraviolet bulb 1400 is controlled by the respective controller 19, but the disclosure is not limited thereto. to In the present embodiment, each of the bases 140 of each of the base assemblies 14 is illustrated as having a respective controller 19, but may also be controlled using a single controller. It can be seen that the base 140 is configured to emit ultraviolet radiation into the chamber 16 via the light penetrating portion 160. That is, the base assembly 14 is configured to emit ultraviolet radiation in a direction substantially away from the vent opening 120 of the second housing 12.

In the present embodiment, the semiconductor element curing device 10a further includes a filter 148. The filter 148 is located below the ultraviolet bulb 1400, the second reflector 144, and the cavity 146. The filter 148 is used to allow ultraviolet light to pass through and block the passage of microwaves (or block other radio frequencies. The aforementioned microwave or radio frequency oscillations range from about 3 kHz to about 300 GHz). For example, the material of the filter 148 may be white iron or may be an alloy steel containing 10% to 30% chromium, and the appearance of the filter 148 may be a mesh screen. However, the filter 148 of the present disclosure is not limited to the foregoing materials and configuration of the structure. In other embodiments, suitable components that are capable of allowing ultraviolet light to pass through and block the passage of microwaves can be applied to the present disclosure.

In some embodiments, the microwave generator 142 can include one or more magnetrons (not shown). The magnetron in the microwave generator 142 is used to excite the gas within the ultraviolet bulb 1400 to produce ultraviolet radiation. Alternatively, a radio frequency (RF) energy source may be used in place of the microwave generator 142 to excite the gas within the ultraviolet bulb 1400 to generate ultraviolet radiation. Radio frequency and microwave radiation can be considered electromagnetic radiation. The aforementioned radio frequency has a frequency range of substantially from about 3 kHz (kilohertz) to about 300 MHz (Megahertz). The aforementioned microwave radiation has a frequency range of substantially from about 300 MHz to about 300 GHz (gigahertz). However, this The disclosed radio frequency can also include a wider range of frequencies.

In the present embodiment, the two base assemblies 14 are each inclined at an angle A to the opposite direction with respect to the axis Y. In the foregoing configuration, the portion below the vent opening 120 in the semiconductor device curing device 10a may have more space to provide cooling gas to circulate around the two lamp cap assemblies 14 to provide more cooling gas to the semiconductor device. Excess heat in the curing device 10a is carried away. Thereby, the normal operation of the UV lamp 1400 of the present disclosure can be ensured or any power supply to the lamp 1400 and the normal operation of the components can be ensured. In addition, the two bases 140 are substantially closer to the center of the substrate 15, thereby enhancing the concentration effect of ultraviolet radiation.

In some embodiments, the aforementioned angle of inclination A can be substantially between about 2 degrees and about 25 degrees. For example, the aforementioned angle A can be substantially between about 2 degrees and about 5 degrees, between about 5 degrees and about 10 degrees, between about 10 degrees and about 15 degrees, and between about 15 degrees and about 20 degrees. Between about 20 degrees and about 25 degrees. However, the present disclosure is not limited to the aforementioned angle A. In actual operation, the inclination angles A of the two base assemblies 14 with respect to the axis Y in opposite directions with respect to the axis Y can be elastically arranged according to individual conditions.

In FIG. 3, the side of the second housing 12 facing away from the chamber 16 has a plurality of cap bodies 122 (shown as two). The two cap covers 122 extend from the edge of the vent opening 120 into the second housing 12, partially covering the microwave generator 142 of the cap assembly 14 respectively, and have a first cover portion 1222 and a second cover portion 1224, respectively. . Further, the first cover portion 1222 of the cap body 122 is substantially parallel to the top position 126 of the second housing 12, partially covering the top surface 142a of the microwave generator 142, and partially by the vent opening 120. Exposed.

In other words, when the second casing 12 is viewed from the end of the semiconductor component curing device 10a away from the chamber 16, a portion of the first cover portion 1222 is shielded by the top position 126 of the second casing 12. In other embodiments, the first cover portion 1222 of the cap body 122 can completely cover the top surface 142a of the microwave generator 142. In the present embodiment, the first cover portion 1222 is spaced apart from the vent opening 120 by a first distance S1.

Moreover, in the present embodiment, the second cover portion 1224 of the cap body 122 is located between the cap assemblies 14 and separates the microwave generator 142 of the cap assembly 14. Furthermore, the second cover portion 1224 partially covers the side surface 142b of the microwave generator 142 and is substantially parallel to the side surface 142b. The two second cover portions 1224 are spaced apart from each other by a second distance S2, and the aforementioned second distance S2 gradually decreases toward the direction of the chamber 16. In other embodiments, the second cover portion 1224 can completely cover the side surface 142b of the microwave generator 142. However, the configuration of the first cover portion 1222 and the second cover portion 1224 of the present disclosure is not limited to the foregoing. In other embodiments, the positional relationship between the first cover portion 1222 and the second cover portion 1224 and other components can be elastically configured according to actual needs.

In detail, please refer to the 3rd and 4th drawings at the same time. FIG. 4 is a partial perspective view of the second housing 12 according to some embodiments of the present disclosure. As shown in the figure, in the present embodiment, the cap body 122 further has a first curved portion 1221, a second curved portion 1223, and an opening 1228. The first curved portion 1221 is connected between the top position 126 of the second casing 12 (see FIG. 3) and the first cover portion 1222, and is located on the top surface 142a of the microwave generator 142. square. The center of curvature of the first curved portion 1221 is located on a side of the second housing 12 away from the chamber 16 and is located outside the second housing 12.

Further, in the present embodiment, the second curved portion 1223 is connected between the first cover portion 1222 and the second cover portion 1224, and a portion of the second curved portion 1223 is exposed by the vent opening 120. The center of curvature of the second curved portion 1223 is adjacent to the top surface 142a of the microwave generator 142 and is located within the second housing 12. In other words, the two second curved portions 1223 are each bent away from the direction of the top position 126 of the second housing 12. The second cover portion 1224 of the cap body 122 has an opening 1228 near one end of the chamber 16, and the opening 1228 is substantially rectangular. However, the configuration of the first curved portion 1221, the second curved portion 1223, and the opening 1228 of the present disclosure is not limited to the foregoing. In other embodiments, the structures of the first curved portion 1221, the second curved portion 1223, and the opening 1228 can be elastically configured according to actual needs. Thereby, through the structural arrangement of the cap body 122, the cooling gas in the curing system assembly 10 can be directed to carry excess heat from the curing system component 10 away from the curing system component 10, thereby enabling the curing system The components in assembly 10 can be cooled to a suitable operating temperature.

In the present embodiment, each of the cap bodies 122 has at least one perforation 1220. The through hole 1220 is passed through the first cover portion 1222 of the base cover 122. In some embodiments, the through hole 1220 can also be disposed through the second cover portion 1224 of the base cover 122. In other embodiments, the perforations 1220 can be disposed at any suitable location on the cap cover 122 according to actual needs. In addition, in the present embodiment, the through holes 1220 of the cap cover 122 are located between the cap assembly 14 and the vent opening 120 of the second housing 12. In other words, the second The orthographic projection of the vent opening 120 of the housing 12 on the base cover 122 completely covers the perforations 1220 of the cap cover 122. In other embodiments, the perforations 1220 of the cap cover 122 may be partially located between the cap assembly 14 and the vent opening 120 of the second housing 12. That is, the orthographic projection portion of the vent opening 120 of the second housing 12 on the base cover 122 covers the perforations 1220 of the cap cover 122.

In the present embodiment, the shape of the through hole 1220 of the cap body 122 is circular, and the number of the perforations 1220 is one, but the disclosure is not limited thereto. Please refer to Figures 5A to 5F. 5A-5F illustrate a partial structural top view of the second housing 12 in accordance with some embodiments of the present disclosure. As shown, in some embodiments, the perforations 1220 of the cap cover 122 may be triangular, rectangular or prismatic in shape, and the number of perforations 1220 may be multiple, such as two or three. However, the structural configuration of the perforation 1220 of the present disclosure is not limited to the foregoing. In other embodiments, the shape of the perforations 1220 can be any suitable shape, and the number of perforations 1220 can also be greater than three.

Please refer back to Figure 3 and Figure 4. Further, as shown in the figure, in the embodiment, a connection portion 1226 is further disposed between the two cap bodies 122. The connecting portion 1226 is located at one end of the second cover portion 1224 adjacent to the chamber 16 and connects the two second cover portions 1224 substantially parallel to the top position 126 of the second housing 12. In detail, in each of the cap bodies 122, the second cover portion 1224 is located between the connecting portion 1226 and the second curved portion 1223. Further, the two openings 1228 of the cap body 122 are adjacent to the connecting portion 1226. That is, the connecting portion 1226 is located between the two openings 1228.

In this embodiment, the cap body 122 can form a channel 1225. The channel 1225 is located between the two cap covers 122. The width of the channel 1225 is respectively determined by the distance between the corresponding two first curved portions 1221, the distance between the two first cover portions 1222, the distance between the two second curved portions 1223, and the two The second distance S2 between the second cover portions 1224 is defined. Additionally, the length of the channel 1225 is defined by the distance between the vent opening 120 and the connecting portion 1226.

In Fig. 4, the width of the passage 1225 gradually becomes smaller along the direction C1, so that the air pressure and the flow velocity of the cooling gas also change. For example, the flow rate near the first bend 1221 is greater than the flow rate near the junction 1226. The air pressure near the first curved portion 1221 is smaller than the air pressure near the connecting portion 1226. By the structural configuration of the channel 1225 and by the perforations 1220 and openings 1228 of the cap cover 122, when cooling gas enters the curing system assembly 10 from the vent opening 120 (see Figure 2), the cooling gas can be along the direction C1 and Circulate in direction C2.

Thereby, through the structural arrangement of the cap body 122, the cooling gas in the curing system assembly 10 can be directed to carry excess heat from the curing system component 10 away from the curing system component 10, thereby enabling the curing system Elements in assembly 10 (eg, lamp head 140, microwave generator 142, first reflector 180 or second reflector 144, etc.) can be cooled to a suitable operating temperature. In this embodiment, the temperature in the cooled curing system component 10 can be substantially between about 25 ° C and about 55 ° C. For example, the aforementioned temperature range can be between about 25 ° C to about 30 ° C, between about 30 ° C to about 35 ° C, between about 35 ° C to about 40 ° C, between about 40 ° C to about 45 ° C, It is between about 45 ° C and about 50 ° C or between about 50 ° C and about 55 ° C. However, this disclosure does not The aforementioned temperature range is limited. In other embodiments, the disclosure may be applied to any suitable temperature range. In addition, the temperature disturbance in the curing system component 10 can also be reduced under the aforementioned structural configuration, thereby stabilizing the operation of the various components in the curing system component 10, thereby stabilizing the efficiency of the ultraviolet light bulb 1400 to generate ultraviolet radiation.

Please refer to Figure 6. FIG. 6 is a flow chart showing a method of curing a semiconductor device in accordance with some embodiments of the present disclosure. Although the disclosed semiconductor component curing methods are illustrated and described herein as a series of steps or events, it is understood that the order in which such steps or events are illustrated is not to be interpreted in a limiting sense. For example, some steps may occur in a different order and/or concurrently with other steps or events, in addition to the order illustrated and/or described herein. In addition, implementation of one or more aspects or embodiments described herein may not require a full illustrated operation. Further, one or more of the steps depicted herein may be implemented in one or more separate steps and/or stages. Specifically, the semiconductor device curing method includes steps 1001 to 1003.

In step 1001, a substrate 15 having a dielectric layer formed thereon is placed in the chamber. Further, the chamber has a light penetrating portion 160. Furthermore, FIG. 3 depicts some embodiments corresponding to steps 1001 through 1003.

In step 1002, the plurality of base assemblies 14 of the semiconductor element curing device 10a are irradiated with ultraviolet rays toward the substrate 15 via the light transmitting portion 160 to cure the dielectric layer. The ultraviolet curing system includes a second housing 12. The second housing 12 is fixed to the chamber 16 and covers the light penetrating portion 160. The second housing 12 has a vent opening 120 and a plurality of cap bodies 122 with respect to one side of the chamber 16. The cap cover 122 extends from the edge of the vent opening 120 to the second housing 12 in. The base assembly 14 is disposed in the second housing 12. The cap body 122 covers at least one of the cap assemblies 14 and has at least one perforation 1220, respectively.

In step 1003, the heat flow generated by the cap assembly 14 is discharged through the vent opening 120 through the perforations 1200 out of the second housing 12. That is, the heat generated by the cap assembly 14 is circulated through the vent opening 120 and the perforations 1200 with the cooling gas outside the second casing 12.

From the above detailed description of the specific embodiments of the present disclosure, it is apparent that the semiconductor device curing apparatus of the present disclosure includes a cap body. The cap body includes a first cover portion, a second cover portion, and a through hole penetrating the first cover portion. Thus, with the aforementioned structural configuration, the cooling gas in the curing system component can be directed to carry excess heat from the curing system component out of the curing system component, thereby allowing components in the curing system component to be cooled to Suitable operating temperature. In addition, in the foregoing structural configuration, the temperature disturbance in the curing system component can be reduced, thereby stabilizing the operation of each component in the curing system component, thereby stabilizing the efficiency of ultraviolet radiation generated by the ultraviolet light bulb, and extending the components of the curing system component. Service life.

The features of the various embodiments described above will enable those of ordinary skill in the art to have a better understanding of the various aspects of the present invention, and those of ordinary skill in the art should understand that the same purpose and/or the The embodiments have the same advantages, and can be easily utilized to further design or modify other processes and structures based on the present case. Those having ordinary skill in the art should also understand that the same structures do not deviate from the spirit and scope of the present case. It is possible to make various changes, substitutions and amendments here without departing from the spirit and scope of the case.

10a‧‧‧Semiconductor component curing device

12‧‧‧ second housing

14‧‧‧Light head assembly

15‧‧‧Substrate

16‧‧‧ chamber

18‧‧‧First housing

19‧‧‧ Controller

120‧‧‧ Ventilation opening

122‧‧‧ lamp cap

126‧‧‧ top position

140‧‧‧ lamp holder

142‧‧‧Microwave Generator

142a‧‧‧ top surface

142b‧‧‧ side surface

144‧‧‧First reflector

146‧‧‧ cavity

148‧‧‧Filter

160‧‧‧Light penetration

166‧‧‧Substrate support

180‧‧‧First reflector

182‧‧‧ gap

1220‧‧‧Perforation

1221‧‧‧First bend

1222‧‧‧First cover body

1223‧‧‧second bend

1224‧‧‧Second cover body

1225‧‧‧ channel

1226‧‧‧Connecting Department

1228‧‧‧ openings

1400‧‧‧UV bulb

2-2‧‧‧ segments

A‧‧‧ angle

D1, D2‧‧‧ diameter

S1, S2‧‧‧ distance

Y‧‧‧ axis

Claims (10)

A semiconductor component curing apparatus comprising: a housing having a vent opening and a plurality of cap bodies extending from an edge of the vent opening into the housing and each having at least one perforation; and plural A lamp cap assembly is disposed in the housing and configured to emit ultraviolet light in a direction substantially away from the vent opening, wherein the cap bodies respectively at least partially cover the cap assemblies. The semiconductor device curing device of claim 1, wherein the through holes are at least partially located between the lamp cap assemblies and the vent opening. The semiconductor device curing device according to claim 1, wherein the shape of the through hole is a circle, an ellipse, a rectangle, a trapezoid or a triangle. The semiconductor device curing device of claim 1, wherein each of the cap assemblies comprises a microwave generator, and each of the cap bodies at least partially covers the microwave generator. The semiconductor device curing device of claim 4, wherein each of the cap bodies has a first cover portion and a second cover portion, and the first cover portion and the second cover portion are respectively at least Partially covering a top surface of the microwave generator and at least one side surface of the microwave generator. The semiconductor device curing device of claim 5, wherein the second cover portions of the cap bodies are located between the cap assemblies to separate the microwave generators of the cap assemblies. A substrate processing system comprising: a chamber having a light transmissive portion; a housing fixed to the chamber and covering the light transmissive portion, the housing having a side facing away from the chamber having a a venting opening and a plurality of caps extending from an edge of the vent opening into the housing; and a plurality of cap assemblies disposed in the housing and configured to pass through the light transmissive portion The chamber emits ultraviolet light, wherein the cap bodies at least partially cover the lamp cap assemblies and each have at least one perforation. The substrate processing system of claim 7, wherein each of the cap assemblies comprises a microwave generator, wherein each of the cap bodies at least partially covers the microwave generator, and the perforations are at least partially located The microwave generator is between the venting opening. The substrate processing system of claim 7, wherein an orthographic projection of the vent opening on the cap bodies at least partially covers the perforations. A semiconductor component curing method comprising: Placing a substrate having a dielectric layer formed thereon in a chamber, wherein the chamber has a light transmissive portion; and the plurality of lamp cap assemblies of an ultraviolet curing system illuminate the substrate via the light penetrating portion Ultraviolet rays to cure the dielectric layer, wherein the ultraviolet curing system includes a housing fixed to the chamber and covering the light penetrating portion, the housing having a ventilation relative to a side of the chamber An opening and a plurality of caps, the caps extending from the edge of the vent opening into the housing, and the cap assemblies are disposed in the housing, the cap bodies covering at least the caps respectively And having at least one perforation on the assembly; and circulating heat generated by the cap assemblies through the vent opening and the perforations to circulate cooling gas outside the housing.