TWI604306B - Data management method for data storage device and memory controller - Google Patents
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- G—PHYSICS
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- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
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- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
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Description
本發明是有關於一種資料管理方法,尤其是有關於一種減少非揮發性記憶體讀取次數並增加資料讀取效率之資料管理方法,以及其所對應的記憶體控制器與資料儲存裝置。The present invention relates to a data management method, and more particularly to a data management method for reducing the number of non-volatile memory readings and increasing data reading efficiency, and a corresponding memory controller and data storage device.
非揮發性記憶體為一種電子式記憶裝置,其具有不需額外電力維持資訊、快速資料讀取以及抗震等能力,因此被廣泛的應用於記憶卡、固態硬碟以及可攜式多媒體裝置等。當儲存於非揮發性記憶體中的資料被多次重複讀取時,非揮發性記憶體可能會出現讀取擾動(Read Disturbance)的情況,進而導致儲存資料不正確,因此非揮發性記憶體在此時就必須進行刷新(Refresh),然非揮發性記憶體進行刷新將會影響到其使用壽命。Non-volatile memory is an electronic memory device that has the ability to maintain information, fast data reading, and shock resistance without additional power. It is widely used in memory cards, solid state drives, and portable multimedia devices. When the data stored in the non-volatile memory is repeatedly read repeatedly, the non-volatile memory may have a read Disturbance, which may result in incorrect storage data, so the non-volatile memory At this point, it is necessary to refresh (Refresh), but non-volatile memory refresh will affect its service life.
以非揮發性記憶體作為資料儲存媒體的資料儲存裝置有系統效能的限制,而此限制乃受限於非揮發性記憶體的物理特性及資料儲存媒體的軟硬體設計。如何調整資料儲存媒體的軟硬體設計而突破此限制以提供較佳的系統效能,此乃資料儲存媒體的製造商的目標。Data storage devices that use non-volatile memory as a data storage medium have limitations in system performance, and this limitation is limited by the physical characteristics of non-volatile memory and the hardware and software design of the data storage medium. How to adjust the software and hardware design of the data storage medium to break through this limitation to provide better system performance is the goal of the manufacturer of the data storage medium.
為了解決上述之缺憾,本發明提出一種資料管理方法、資料儲存裝置與記憶體控制器,以增進資料儲存裝置讀取資料的效率。In order to solve the above drawbacks, the present invention provides a data management method, a data storage device and a memory controller to improve the efficiency of reading data by the data storage device.
本發明提出一種用於資料儲存裝置的資料管理方法實施例,資料儲存裝置包括非揮發性記憶體,非揮發性記憶體包括多個資料頁,每一資料頁用以儲存多筆資料,其步驟包括:接收一讀取指令;當讀取指令的一目標資料係儲存於一資料暫時儲存裝置,則從資料暫時儲存裝置讀取目標資料;判斷資料暫時儲存裝置的一剩餘資料的一資料量是否大於一門檻值,其中,剩餘資料為部份的一後續資料且目標資料與剩餘資料在資料讀取上有前後之關係;以及當判斷為否,將目標資料的至少一後續資料頁的資料儲存至資料暫時儲存裝置。The present invention provides an embodiment of a data management method for a data storage device. The data storage device includes non-volatile memory. The non-volatile memory includes a plurality of data pages, and each data page is used to store multiple data. The method includes: receiving a read command; when a target data of the read command is stored in a temporary storage device, reading the target data from the temporary storage device; and determining whether a data amount of a remaining data of the temporary storage device is More than one threshold, wherein the remaining data is part of a follow-up data and the target data has a relationship with the remaining data in the data reading; and when the judgment is no, the data of at least one subsequent data page of the target data is stored. To the data temporary storage device.
本發明更提出另一種用於資料儲存裝置的資料管理方法實施例,資料儲存裝置包括非揮發性記憶體,非揮發性記憶體包括多個資料頁,每一資料頁用以儲存多筆資料,其步驟包括:接收一讀取指令;根據該讀取指令由一資料暫時儲存裝置讀取一目標資料;判斷該資料暫時儲存裝置的一剩餘資料的一資料量是否大於一門檻值,其中,該剩餘資料為部份的一後續資料且該目標資料與該剩餘資料在資料讀取上有前後之關係;當判斷為否,紀錄該目標資料的至少一後續資料頁的資料至該資料暫時儲存裝置。The present invention further provides another embodiment of a data management method for a data storage device. The data storage device includes a non-volatile memory, and the non-volatile memory includes a plurality of data pages, each of which is used to store a plurality of data. The method includes: receiving a read command; reading, by the data temporary storage device, a target data according to the read command; determining whether a data amount of a remaining data of the temporary storage device is greater than a threshold value, wherein The remaining information is part of a follow-up data and the target data has a relationship with the remaining data in the reading of the data; when the judgment is no, the data of at least one subsequent data page of the target data is recorded to the temporary storage device of the data. .
本發明提出一種用於資料管理方法的資料儲存裝置,其包括非揮發性記憶體、資料暫時儲存裝置以及記憶體控制器,非揮發性記憶體包括多個資料頁,每一資料頁用以儲存多筆資料,資料暫時儲存裝置用以儲存所述多筆資料,記憶體控制器與非揮發性記憶體以及資料暫時儲存裝置電性耦接,記憶體控制器是用以接收讀取指令,並根據讀取指令由資料暫時儲存裝置讀取一目標資料,記憶體控制器並判斷資料暫時儲存裝置的一剩餘資料的一資料量是否大於一門檻值,其中,剩餘資料為部份的一後續資料且目標資料與剩餘資料在資料讀取上有前後之關係,當判斷為否,記憶體控制器將目標資料的至少一後續資料頁的資料儲存至資料暫時儲存裝置。The present invention provides a data storage device for a data management method, which includes a non-volatile memory, a temporary data storage device, and a memory controller. The non-volatile memory includes a plurality of data pages, and each data page is stored. a plurality of data storage means for storing the plurality of data, the memory controller is electrically coupled to the non-volatile memory and the data temporary storage device, and the memory controller is configured to receive the read command, and Reading, by the data temporary storage device, a target data according to the read command, and the memory controller determines whether a data amount of a remaining data of the temporary storage device is greater than a threshold value, wherein the remaining data is part of a subsequent data. And the target data and the remaining data have a relationship between the data reading and the reading, if the judgment is no, the memory controller stores the data of at least one subsequent data page of the target data to the temporary storage device.
本發明提出一種用於資料管理方法的記憶體控制器,其包括第一通訊介面、第二通訊介面、第三通訊介面以及微處理器。第一通訊介面是用以與非揮發性記憶體通訊以存取非揮發性記憶體,第二通訊介面是用以與資料暫時儲存裝置通訊以存取資料暫時儲存裝置,第三通訊介面是用以與主機通訊以接收來自主機之讀取指令,微處理器與第一通訊介面、第二通訊介面以及第三通訊介面電性耦接,微處理器是用以根據讀取指令由資料暫時儲存裝置讀取一目標資料,微處理器判斷資料暫時儲存裝置的一剩餘資料的一資料量是否大於一門檻值,其中,剩餘資料為部份的一後續資料且目標資料與剩餘資料在資料讀取上有前後之關係,當微處理器判斷為否,微處理器記錄目標資料的至少一後續資料頁的資料至資料暫時儲存裝置。The invention provides a memory controller for a data management method, which comprises a first communication interface, a second communication interface, a third communication interface and a microprocessor. The first communication interface is for communicating with the non-volatile memory to access the non-volatile memory, and the second communication interface is for communicating with the data temporary storage device to access the temporary storage device, and the third communication interface is used The microprocessor is in communication with the host to receive the read command from the host, and the microprocessor is electrically coupled to the first communication interface, the second communication interface, and the third communication interface, and the microprocessor is configured to temporarily store the data according to the read command. The device reads a target data, and the microprocessor determines whether a data amount of a remaining data of the temporary storage device is greater than a threshold value, wherein the remaining data is part of a subsequent data and the target data and the remaining data are read in the data. There is a relationship between the front and back. When the microprocessor determines no, the microprocessor records the data of at least one subsequent data page of the target data to the temporary storage device.
綜以上所述,本發明因可在當前資料頁被讀取完畢前將後續資料頁預先讀取至資料暫時儲存裝置,使資料暫時儲存裝置可儲存超過一個資料頁的資料量的資料,因此當接收到讀取後續資料的讀取指令時,資料儲存裝置不僅可快速的從資料暫時儲存裝置讀取所需的資料,減少非揮發性記憶體被讀取的次數,當多筆讀取指令持續發送且讀取指令所對應的資料尚未被儲存至資料暫時儲存裝置時,資料儲存裝置更可快速的由非揮發性記憶體讀取對應的資料並儲存至資料暫時儲存裝置,而不用等待因多筆讀取指令所造成的延遲時間,有效增進資料儲存裝置讀取資料的效益。In summary, the present invention can pre-read the subsequent data page to the temporary storage device before the current data page is read, so that the temporary storage device can store more than one data page. When receiving a read command for reading subsequent data, the data storage device can not only quickly read the required data from the data temporary storage device, but also reduce the number of times the non-volatile memory is read, when multiple read commands continue When the data corresponding to the sending and reading command has not been stored in the temporary storage device, the data storage device can quickly read the corresponding data from the non-volatile memory and store it in the temporary storage device without waiting for more The delay time caused by the pen reading instruction effectively improves the efficiency of reading data from the data storage device.
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉較佳實施例並配合所附圖式做詳細說明如下。The above and other objects, features, and advantages of the present invention will become more apparent from the description of the appended claims.
請參考圖1,圖1為資料儲存裝置實施例示意圖,資料儲存裝置10是用以與外部主機20通訊,並根據主機20所發送之讀取指令讀取儲存於資料儲存裝置10之資料,所述資料可以是用以顯示的影像資料或者為音訊資料等,所述主機20可以為桌上型電腦或平板電腦等電子裝置。資料儲存裝置10包括記憶體控制器11、非揮發性記憶體12以及資料暫時儲存裝置13,非揮發性記憶體12例如為快閃記憶體(Flash Memory) 、磁阻式隨機存取記憶體(Magnetoresistive RAM)、相變記憶體(Phase-change memory)或鐵電隨機存取記憶體(Ferroelectric RAM)等具有長時間資料保存之資料儲存媒體,資料暫時儲存裝置13例如為動態隨機存取記憶體(Dynamic Random Access Memory, DRAM),記憶體控制器11與主機20、非揮發性記憶體12以及資料暫時儲存裝置13電性耦接。Please refer to FIG. 1. FIG. 1 is a schematic diagram of an embodiment of a data storage device. The data storage device 10 is configured to communicate with an external host 20, and reads data stored in the data storage device 10 according to a read command sent by the host 20. The data may be image data for display or audio data, etc., and the host computer 20 may be an electronic device such as a desktop computer or a tablet computer. The data storage device 10 includes a memory controller 11, a non-volatile memory 12, and a data temporary storage device 13. The non-volatile memory 12 is, for example, a flash memory or a magnetoresistive random access memory ( Magnetoresistive RAM), phase-change memory or ferroelectric RAM, etc., which have long-term data storage data storage medium, and the data temporary storage device 13 is, for example, a dynamic random access memory. (Dynamic Random Access Memory, DRAM), the memory controller 11 is electrically coupled to the host 20, the non-volatile memory 12, and the data temporary storage device 13.
記憶體控制器11更包括了第一通訊介面111、第二通訊介面112、第三通訊介面113以及微處理器114,微處理器114與第一通訊介面111、第二通訊介面112以及第三通訊介面113電性耦接,記憶體控制器11可藉由第一通訊介面111與非揮發性記憶體12通訊並存取非揮發性記憶體12,記憶體控制器11可藉由第二通訊介面112與資料暫時儲存裝置13通訊並存取資料暫時儲存裝置13,記憶體控制器11可藉由第三通訊介面113與主機20通訊,其中,非揮發性記憶體12包含多個資料區塊(Block),每一資料區塊並包括多個資料頁(Page),每一資料頁用以儲存所述資料,因此記憶體控制器11可根據讀取指令循序讀取主機20所需的資料。The memory controller 11 further includes a first communication interface 111, a second communication interface 112, a third communication interface 113, and a microprocessor 114. The microprocessor 114 is coupled to the first communication interface 111, the second communication interface 112, and the third The communication interface 113 is electrically coupled, and the memory controller 11 can communicate with the non-volatile memory 12 via the first communication interface 111 and access the non-volatile memory 12, and the memory controller 11 can be connected by the second communication. The interface 112 communicates with the data temporary storage device 13 and accesses the data temporary storage device 13. The memory controller 11 can communicate with the host 20 via the third communication interface 113. The non-volatile memory 12 includes a plurality of data blocks. (Block), each data block includes a plurality of pages (Page), each data page is used to store the data, so the memory controller 11 can sequentially read the data required by the host 20 according to the read command. .
此外,上述之第一通訊介面111例如為開放式NAND快閃記憶體介面(ONFI,Open NAND Flash Interface)或Toggle。上述之第二通訊介面112例如為DFI介面(DDR PHY Interface)。上述之第三通訊介面113例如為SATA介面(Serial Advanced Technology Attachment)、通用序列匯流排(Universal Serial Bus, USB)、快捷外設互聯標準(PCI Express,Peripheral Component Interconnect Express)、序列式小型電腦系統介面(Serial Attached SCSI ,SAS)、通用快閃記憶體儲存裝置(UFS,Universal Flash Storage)、多媒體記憶卡(eMMC,embeded MultiMedia Card)以及SDIO介面(Secure Digital Input/Output)。In addition, the first communication interface 111 is, for example, an open NAND flash interface (ONFI) or Toggle. The second communication interface 112 is, for example, a DFI interface (DDR PHY Interface). The third communication interface 113 is, for example, a SATA interface (Serial Advanced Technology Attachment), a Universal Serial Bus (USB), a Peripheral Component Interconnect Express (PCI Express), and a serial small computer system. Serial Attached SCSI (SAS), Universal Flash Storage (UFS), Embeded MultiMedia Card (eMMC) and SD Digital Interface (Secure Digital Input/Output).
為了提供較佳的資料儲存裝置10的系統效能並減少非揮發性記憶體12被讀取的次數,本發明揭露一種資料管理方法,將非揮發性記憶體12中可能會被讀取的資料預先儲存至資料暫時儲存裝置13,如此一來,資料儲存裝置10可以快速地回應主機20之讀取指令,使資料儲存裝置10的系統效能提升。以下將配合圖1、圖2以及圖3說明本發明之資料管理方法實施例,為了簡化說明,非揮發性記憶體12包含複數個資料頁,包括資料頁P1到資料頁P8以及其他資料頁(省略),每一資料頁包含3個區段,區段為資料儲存的最小單位,也是資料定址(addressing)的依據。每一區段的大小對應至一個邏輯資料區塊位址(LBA,Logical Block Address)的大小,每一LBA之大小較佳為512位元組(Byte)。然而,使用者可依據其實際需求而設定每個資料頁的大小,例如:4096位元組或8192位元組;或設定每一資料頁所包含的區段的數目,例如8個區段或32個區段;或設定每一邏輯資料區塊位址的大小,例如:1024位元組或4096位元組,技術上而言皆為可行,故不以此為限。In order to provide better system performance of the data storage device 10 and reduce the number of times the non-volatile memory 12 is read, the present invention discloses a data management method in which data that may be read in the non-volatile memory 12 is advanced. The data storage device 10 can be quickly responded to the read command of the host 20 to improve the system performance of the data storage device 10. Hereinafter, an embodiment of the data management method of the present invention will be described with reference to FIG. 1, FIG. 2 and FIG. 3. For simplicity of explanation, the non-volatile memory 12 includes a plurality of data pages, including a data page P1 to a data page P8 and other data pages ( Omitted), each data page contains 3 sections, which is the smallest unit of data storage, and is also the basis for data addressing. The size of each segment corresponds to a logical block address (LBA, Logical Block Address), and the size of each LBA is preferably 512 bytes. However, the user can set the size of each data page according to its actual needs, for example: 4096 bytes or 8192 bytes; or set the number of segments included in each data page, for example, 8 segments or 32 sectors; or set the size of each logical data block address, for example: 1024 bytes or 4096 bytes, technically feasible, and therefore not limited to this.
非揮發性記憶體12儲存有四個檔案,每一個檔案被予以一個特定的檔案識別碼(File ID)。由於每一個檔案都有一個特定的檔案識別碼,微處理器114依據此檔案識別碼記錄特定檔案的所有資料頁的起始位址;或者,儲存特定檔案的第一個資料頁的起始位址,再藉由第一個資料頁的內容得知後續資料頁的起始位址,直到找到檔案結束的符號。一般而言,檔案通常為不連續儲存,然而,製造商可事先將每一個檔案依序並連續地儲存至資料暫時儲存裝置13,在此情況下,每一個檔案的所有資料頁為相鄰且依序儲存。由於起始位址已知,依據每一資料在每一資料頁的相對位址即能得知每一資料的絕對位址。The non-volatile memory 12 stores four files, each of which is given a specific file ID. Since each file has a specific file identification code, the microprocessor 114 records the start address of all the data pages of the specific file according to the file identification code; or stores the start bit of the first data page of the specific file. The address of the first data page is used to know the starting address of the subsequent data page until the symbol at the end of the file is found. In general, files are usually stored discontinuously. However, the manufacturer can store each file in sequence and continuously to the data temporary storage device 13 in advance, in which case all the data pages of each file are adjacent and Store in order. Since the starting address is known, the absolute address of each data can be known based on the relative address of each data page.
如圖3所示,檔案a儲存於資料頁P1、P2以及P3,資料頁P1、P2以及P3為相鄰的資料頁且資料頁P2以及P3為資料頁P1的後續資料頁。資料頁P1包含3筆資料,即資料a11、資料a12及資料a13;資料頁P2包含3筆資料,即資料a21、資料a22及資料a23;資料頁P3包含3筆資料,即資料a31、資料a32及資料a33。檔案b儲存於資料頁P4以及P5,資料頁P4以及P5為相鄰的資料頁且資料頁P5為資料頁P4的後續資料頁。資料頁P4包含3筆資料,即資料b11、資料b12及資料b13;資料頁P5包含3筆資料,即資料b21、資料b22及資料b23。檔案c儲存於資料頁P6以及P7,資料頁P6以及P7為相鄰的資料頁且資料頁P7為資料頁P6的後續資料頁。資料頁P6包含3筆資料,即資料c11、資料c12及資料c13;資料頁P7包含3筆資料,即資料c21、資料c22及資料c23。檔案d儲存於資料頁P8,資料頁P8包含3筆資料,即資料d11、資料d12及資料d13。As shown in FIG. 3, the file a is stored in the material pages P1, P2, and P3, the data pages P1, P2, and P3 are adjacent data pages, and the data pages P2 and P3 are subsequent data pages of the data page P1. The data page P1 contains 3 pieces of data, namely data a11, data a12 and data a13; data page P2 contains 3 pieces of data, namely data a21, data a22 and data a23; data page P3 contains 3 pieces of data, ie data a31, data a32 And information a33. The file b is stored in the data pages P4 and P5, the data pages P4 and P5 are adjacent data pages, and the data page P5 is the subsequent data page of the data page P4. The data page P4 contains 3 pieces of data, namely data b11, data b12 and data b13; the data page P5 contains 3 pieces of data, namely data b21, data b22 and data b23. The file c is stored in the data pages P6 and P7, the data pages P6 and P7 are adjacent data pages, and the data page P7 is the subsequent data page of the data page P6. The data page P6 contains 3 pieces of data, namely the data c11, the data c12 and the data c13; the data page P7 contains 3 pieces of data, namely the data c21, the data c22 and the data c23. The file d is stored in the data page P8, and the data page P8 contains three pieces of data, namely the data d11, the data d12 and the data d13.
首先,步驟S201,接收讀取指令。當圖1所述的主機20欲讀取資料儲存裝置10所儲存的目標資料時,例如檔案a的資料a11,主機20會發送上述之讀取指令至資料儲存裝置10,資料儲存裝置10之微處理器114透過第三通訊介面113接收到主機20所傳送的讀取指令。First, in step S201, a read command is received. When the host 20 shown in FIG. 1 wants to read the target data stored in the data storage device 10, for example, the data a11 of the file a, the host 20 sends the read command to the data storage device 10, and the data storage device 10 The processor 114 receives the read command transmitted by the host 20 through the third communication interface 113.
步驟S203,判斷讀取指令所對應之目標資料,是否儲存於資料暫時儲存裝置13中。微處理器114接收到讀取指令後,會根據讀取指令所包含的位址資訊得到目標資料的儲存位址,並根據儲存位址來判斷目標資料是否儲存於資料暫時儲存裝置13中,如果是則執行步驟S209;如果否則執行步驟S205。其中,資料暫時儲存裝置13較佳為動態隨機存取記憶體(Dynamic Random Access Memory,DRAM),亦可為靜態隨機存取記憶體(Static Random Access Memory,SRAM)等平均讀取速度優於非揮發性記憶體12之資料暫存器或資料緩衝器。假設檔案a的資料a11僅儲存於非揮發性記憶體12,並未儲存於資料暫時儲存裝置13,因此,執行步驟S205。In step S203, it is determined whether the target data corresponding to the read command is stored in the data temporary storage device 13. After receiving the read command, the microprocessor 114 obtains the storage address of the target data according to the address information included in the read command, and determines whether the target data is stored in the temporary storage device 13 according to the storage address. If yes, go to step S209; if not, go to step S205. The data temporary storage device 13 is preferably a dynamic random access memory (DRAM), or a static random access memory (SRAM), and the average reading speed is better than non- Data buffer or data buffer for volatile memory 12. It is assumed that the data a11 of the file a is stored only in the non-volatile memory 12 and is not stored in the data temporary storage device 13, and therefore, step S205 is performed.
步驟S205,讀取包含目標資料的資料頁並回傳目標資料。微處理器114根據儲存位址至非揮發性記憶體12讀取包含目標資料的資料頁,即資料頁P1,以取得目標資料,即資料a11,並藉由第三通訊介面113回傳目標資料至主機20。Step S205, reading the data page containing the target data and returning the target data. The microprocessor 114 reads the data page including the target data, that is, the data page P1, according to the storage address to the non-volatile memory 12, to obtain the target data, that is, the data a11, and returns the target data through the third communication interface 113. To the host 20.
在另一實施例中,步驟S205變更為讀取包含目標資料的資料頁以及後續資料頁,並回傳目標資料。在此實施例中,後續資料頁可以為一個資料頁,即資料頁P2;後續資料頁也可以為二個資料頁,即資料頁P2以及P3,後續資料頁的數目可以依使用者之需求而調整,並不以此為限。假設主機20欲讀取連續數筆資料時,由於後續資料頁已被讀取並儲存至暫時儲存裝置13,當主機20欲讀取包含目標資料的多筆資料時,微處理器114在後續的步驟中可訊速地提供資料給主機20。In another embodiment, step S205 is changed to read the data page including the target data and the subsequent data page, and return the target data. In this embodiment, the subsequent data page may be a data page, that is, the data page P2; the subsequent data page may also be two data pages, that is, the data pages P2 and P3, and the number of subsequent data pages may be according to the needs of the user. Adjustment is not limited to this. Assuming that the host 20 wants to read a continuous number of data, since the subsequent data page has been read and stored in the temporary storage device 13, when the host 20 wants to read multiple pieces of data containing the target data, the microprocessor 114 is in the subsequent In the step, the data can be provided to the host 20 at a speed.
步驟S207,儲存後續資料至資料暫時儲存裝置13,其中,目標資料與後續資料皆儲存於同一資料頁中。微處理器114從資料頁P1取得目標資料外,亦可取得目標資料的後續資料,包括資料a12以及資料a13,並將後續資料儲存至資料暫時儲存裝置13中。另外,步驟S207更可儲存目標資料至資料暫時儲存裝置13,不儲存目標資料至資料暫時儲存裝置13的優點是可以節省資料暫時儲存裝置13的空間使用量;相反的,儲存目標資料至資料暫時儲存裝置13的優點是當目標資料被重覆讀取時,微處理器114可以直接從資料暫時儲存裝置13回傳目標資料至主機20,增加資料讀取的效能。In step S207, the subsequent data is stored in the temporary storage device 13, wherein the target data and the subsequent data are stored in the same data page. The microprocessor 114 obtains the target data from the data page P1, and can also obtain the subsequent data of the target data, including the data a12 and the data a13, and store the subsequent data in the data temporary storage device 13. In addition, the step S207 can further store the target data to the data temporary storage device 13. The advantage of not storing the target data to the data temporary storage device 13 is that the space usage of the data temporary storage device 13 can be saved; on the contrary, the target data is stored to the data temporarily. The advantage of the storage device 13 is that when the target data is repeatedly read, the microprocessor 114 can directly return the target data from the data temporary storage device 13 to the host 20, thereby increasing the performance of the data reading.
步驟S209,回傳目標資料。當步驟S203判斷為是,也就是目標資料是儲存至資料暫時儲存裝置13,微處理器114會根據儲存位址至資料暫時儲存裝置13讀取目標資料,例如資料a12,並將讀取的目標資料藉由第三通訊介面113傳送至主機20。此實施例除了可以降低微處理器114執行步驟S205的次數,亦可增加資料讀取的效率。In step S209, the target data is returned. When the determination in step S203 is YES, that is, the target data is stored in the data temporary storage device 13, the microprocessor 114 reads the target data, such as the data a12, according to the storage address to the data temporary storage device 13, and the target is read. The data is transmitted to the host 20 via the third communication interface 113. In addition to reducing the number of times the microprocessor 114 performs step S205, this embodiment can also increase the efficiency of data reading.
步驟S211,判斷儲存於資料暫時儲存裝置13的剩餘資料的資料量是否大於門檻值,其中,剩餘資料為部份的後續資料且目標資料與剩餘資料在資料讀取上有前後之關係,而後續資料減去目標資料等於剩餘資料。假設門檻值是一個區段,目標資料為資料a11,當步驟S207執行時,資料a11被傳送至主機20,資料a12以及資料a13被儲存至資料暫時儲存裝置13。當步驟S209執行時,目標資料已更新為資料a12且目標資料被傳送至主機20,因此,儲存於資料暫時儲存裝置13的剩餘資料僅剩下資料a13,其僅為一個區段大小而不大於門檻值,因此,步驟S211的判斷結果為否,故執行步驟S213。相反的,如果步驟S211的判斷結果為真則回到步驟S201等待下一個讀取指令。在另一實施例中,門檻值可為資料量的大小,例如1024位元組或其他數值,較佳為一個區段大小的整數倍。另外,剩餘資料的資料量亦可由位址的差值來表示,例如,剩餘資料的最大位址值減去最小位址值的值即為位址的差值,在此情況下,門檻值較佳為小於資料頁所包含的區段的數目,例如整數2,但不以此為限。Step S211, determining whether the amount of data of the remaining data stored in the temporary storage device 13 is greater than a threshold value, wherein the remaining data is part of the subsequent data and the relationship between the target data and the remaining data in the data reading, and subsequent The data minus the target data is equal to the remaining data. Assuming that the threshold value is a sector, the target data is the data a11. When the step S207 is executed, the data a11 is transmitted to the host 20, and the data a12 and the data a13 are stored to the data temporary storage device 13. When the step S209 is executed, the target data has been updated to the data a12 and the target data is transmitted to the host 20, so that the remaining data stored in the data temporary storage device 13 only has the data a13, which is only one segment size and not larger than Since the threshold value is NO, the determination result in step S211 is NO, so step S213 is executed. Conversely, if the result of the determination in step S211 is true, the process returns to step S201 to wait for the next read command. In another embodiment, the threshold value may be the size of the data amount, such as 1024 bytes or other values, preferably an integer multiple of one segment size. In addition, the amount of data of the remaining data may also be represented by the difference of the address. For example, the value of the maximum address value of the remaining data minus the value of the minimum address value is the difference of the address, in which case the threshold value is Preferably, it is smaller than the number of segments included in the data page, such as an integer of 2, but not limited thereto.
步驟S213,將後續資料頁的資料儲存於資料暫時儲存裝置13。微處理器114依據檔案識別碼而取得目前資料頁以及後續資料頁的位址,依據後續資料頁的位址即能從非揮發性記憶體12讀取後續資料頁;或者,微處理器114可以直接讀取目前資料頁的後續資料頁,例如資料頁P2,並將後續資料頁的資料,包括資料a21、資料a22以及資料a23,儲存於資料暫時儲存裝置13。當資料a21、資料a22以及資料a23儲存至資料暫時儲存裝置13後,加上原本就已儲存的資料a13,剩餘資料的資料量變更為4個區段而大於門檻值。最後,回到步驟S201等待下一個讀取指令。在另一實施例中,步驟S213變更為將後續多個資料頁的資料儲存於資料暫時儲存裝置13,例如,資料頁P2及資料頁P3。假設主機20欲讀取連續數筆資料時,在步驟S213中讀取後續多個資料頁並將後續多個資料頁的資料儲存至暫時儲存裝置13,除了可以降低微處理器114執行步驟S213的次數,亦可增加資料讀取的效率。In step S213, the data of the subsequent data page is stored in the data temporary storage device 13. The microprocessor 114 obtains the address of the current data page and the subsequent data page according to the file identification code, and can read the subsequent data page from the non-volatile memory 12 according to the address of the subsequent data page; or the microprocessor 114 can The subsequent data page of the current data page, such as the data page P2, is directly read, and the data of the subsequent data page, including the data a21, the data a22, and the data a23, are stored in the temporary storage device 13. When the data a21, the data a22, and the data a23 are stored in the temporary storage device 13, the data a13 originally stored is added, and the amount of the remaining data is changed to four segments and is greater than the threshold. Finally, returning to step S201, it waits for the next read command. In another embodiment, step S213 is changed to store the data of the subsequent plurality of data pages in the data temporary storage device 13, for example, the data page P2 and the data page P3. Assuming that the host 20 wants to read a continuous number of data, the subsequent plurality of data pages are read in step S213 and the data of the subsequent plurality of data pages are stored to the temporary storage device 13, except that the microprocessor 114 can be reduced to perform step S213. The number of times can also increase the efficiency of data reading.
接著以圖4A以及圖4B再次說明本發明之資料管理方法實施例。接著請先參考圖4A,圖4A為習知的資料管理方法實施例示意圖,圖中橫軸為時間Time,圖4A上半部所示的多個資料為主機20藉由讀取指令向記憶體控制器11所要求的目標資料,圖4A下半部所示的為記憶體控制器11根據讀取指令儲存至資料暫時儲存裝置13的多個資料頁。當主機20在時間T1發出第一個讀取指令,且為讀取檔案a的資料a11的讀取指令時,於步驟S205記憶體控制器11從非揮發性記憶體12讀取資料頁P1並於步驟S207將資料a12以及資料a13儲存至資料暫時儲存裝置13中。接著在時間T2,主機20發出了讀取檔案b的資料b11的讀取指令,此時記憶體控制器11仍在進行資料頁P1的處理而無法處理此讀取指令。直到時間T3,於步驟S205記憶體控制器11從非揮發性記憶體12讀取資料頁P4並於步驟S207時將資料b12以及資料b13儲存於資料暫時儲存裝置13中。在時間T3時,主機20發出了讀取檔案c的資料c11的讀取指令,此時記憶體控制器11仍在進行資料頁P4的處理而無法處理此讀取指令。直到時間T32,於步驟S205記憶體控制器11從非揮發性記憶體12讀取資料頁P6並於步驟S207時將資料c12以及資料c13儲存於資料暫時儲存裝置13中。Next, an embodiment of the data management method of the present invention will be described again with reference to FIGS. 4A and 4B. Referring to FIG. 4A, FIG. 4A is a schematic diagram of a conventional data management method. The horizontal axis is time Time, and the plurality of data shown in the upper half of FIG. 4A is the host 20 by reading instructions to the memory. The target data required by the controller 11, as shown in the lower half of Fig. 4A, is a plurality of data pages stored by the memory controller 11 to the data temporary storage device 13 in accordance with the read command. When the host 20 issues the first read command at time T1 and reads the read command of the data a11 of the file a, the memory controller 11 reads the data page P1 from the non-volatile memory 12 in step S205. The data a12 and the data a13 are stored in the data temporary storage device 13 in step S207. Next, at time T2, the host 20 issues a read command to read the data b11 of the file b. At this time, the memory controller 11 is still processing the data page P1 and cannot process the read command. Until time T3, the memory controller 11 reads the material page P4 from the non-volatile memory 12 in step S205 and stores the data b12 and the data b13 in the data temporary storage device 13 in step S207. At time T3, the host 20 issues a read command to read the data c11 of the file c. At this time, the memory controller 11 is still processing the data page P4 and cannot process the read command. Until time T32, the memory controller 11 reads the material page P6 from the non-volatile memory 12 in step S205 and stores the data c12 and the data c13 in the data temporary storage device 13 in step S207.
於時間T6,主機20發出了檔案a的資料a21的讀取指令,於步驟S205記憶體控制器11從非揮發性記憶體12讀取資料頁P2並於步驟S207將資料a22以及資料a23儲存至資料暫時儲存裝置13中。而從圖4B中明顯看出,記憶體控制器11在接收到資料a21的讀取指令之前,即時間T5至T6之間,由於主機20所要求的目標資料皆已存在資料暫時儲存裝置13中,故記憶體控制器11不會存取非揮發性記憶體12,這段時間又稱為待命時間Ts。於時間T7時,主機20發出了檔案d的資料d11的讀取指令,此時記憶體控制器11仍在進行資料頁P5的處理,且接著要進行資料頁P7的處理,故無法處理此讀取指令。直到時間T8,於步驟S205記憶體控制器11從非揮發性記憶體12讀取資料頁P8並於步驟S207時將資料d12以及資料d13儲存於資料暫時儲存裝置13中。時間T7至T8之間,由於記憶體控制器11仍在進行資料頁P5及P7的處理而無法讀取資料頁P8,這段時間又稱為延遲時間Td。At time T6, the host 20 issues a read command of the data a21 of the file a. In step S205, the memory controller 11 reads the data page P2 from the non-volatile memory 12 and stores the data a22 and the data a23 to the step S207. The data is temporarily stored in the device 13. As is apparent from FIG. 4B, the memory controller 11 receives the read command of the data a21, that is, between the times T5 and T6, since the target data requested by the host 20 is already present in the data temporary storage device 13. Therefore, the memory controller 11 does not access the non-volatile memory 12, and this time is also called the standby time Ts. At time T7, the host 20 issues a read command of the data d11 of the file d. At this time, the memory controller 11 is still processing the data page P5, and then the data page P7 is processed, so the read cannot be processed. Take instructions. Until time T8, the memory controller 11 reads the material page P8 from the non-volatile memory 12 in step S205 and stores the data d12 and the data d13 in the data temporary storage device 13 in step S207. Between time T7 and T8, since the memory controller 11 is still processing the data pages P5 and P7 and cannot read the data page P8, this time is also referred to as the delay time Td.
接著請參考圖4B,圖4B為本發明之資料管理方法實施例。圖中橫軸為時間Time,圖4B上半部所示的多個資料為主機20藉由讀取指令向記憶體控制器11所要求的資料,圖4B下半部所示的為記憶體控制器11根據讀取指令儲存至資料暫時儲存裝置13的資料頁,其中,圖4A與圖4B中相同的時間元件符號指的為相同時點,例如圖4A中的時間T1的時點與圖4B的時間T1相同,以此類推其他相同的時間元件符號。首先與圖4A雷同,記憶體控制器11根據主機20的讀取指令,依序讀取資料頁P1、P4以及P6並將資料a12、a13、b12、b13、c12以及資料c13儲存至資料暫時儲存裝置13。當主機20在時間T31發出了檔案a的資料a12的讀取指令時,於步驟209目標資料更新為資料a12且被傳送至主機20,因此,剩餘資料僅剩下資料a13而使得步驟S211的判斷結果為否,故執行步驟S213從非揮發性記憶體12讀取資料頁P2並將資料a21、資料a22以及資料a23儲存於資料暫時儲存裝置13。時間T32以及時間T33發生類似於時間T31的運作,差別僅在於被讀取的資料頁為資料頁P5以及資料頁P7。由於執行步驟213的緣故,待命時間Ts不復存在,取而代之的是預先讀取並儲存後續資料頁,即資料頁P2、P5以及P7,的資料至資料暫時儲存裝置13。預先讀取的優點為待命時間Ts的消除或縮減,因而使延遲時間Td的消除或縮減。如圖4B所示,於時間T7時,主機20發出了檔案d的資料d11的讀取指令,此時記憶體控制器11可以快速地回應主機20的讀取指令。於步驟S205記憶體控制器11從非揮發性記憶體12讀取資料頁P8並於步驟S207時將資料d12以及資料d13儲存於資料暫時儲存裝置13中,因此,延遲時間Td被消除了。Next, please refer to FIG. 4B. FIG. 4B is an embodiment of a data management method according to the present invention. In the figure, the horizontal axis is time Time, and the plurality of materials shown in the upper half of FIG. 4B are the data requested by the host 20 to the memory controller 11 by the read command, and the memory control is shown in the lower half of FIG. 4B. The device 11 stores the data page of the data temporary storage device 13 according to the read command, wherein the same time component symbol in FIG. 4A and FIG. 4B refers to the same time point, for example, the time point of time T1 in FIG. 4A and the time of FIG. 4B. T1 is the same, and so on with other identical time component symbols. First, similar to FIG. 4A, the memory controller 11 sequentially reads the data pages P1, P4, and P6 according to the read command of the host 20 and stores the data a12, a13, b12, b13, c12, and the data c13 to the temporary storage of the data. Device 13. When the host 20 issues a read command of the data a12 of the file a at time T31, the target data is updated to the material a12 in step 209 and transmitted to the host 20, so that only the data a13 remains for the remaining data, so that the judgment of step S211 is made. If the result is no, the data page P2 is read from the non-volatile memory 12 in step S213, and the data a21, the data a22, and the data a23 are stored in the data temporary storage device 13. Time T32 and time T33 occur similarly to the operation of time T31, except that the data page being read is the material page P5 and the material page P7. Since the standby time Ts is no longer present due to the execution of step 213, the data of the subsequent data pages, that is, the data pages P2, P5, and P7, is read and stored in advance to the data temporary storage device 13. The advantage of pre-reading is the elimination or reduction of the standby time Ts, thus eliminating or reducing the delay time Td. As shown in FIG. 4B, at time T7, the host 20 issues a read command of the data d11 of the file d, at which time the memory controller 11 can quickly respond to the read command of the host 20. In step S205, the memory controller 11 reads the material page P8 from the non-volatile memory 12 and stores the data d12 and the data d13 in the data temporary storage device 13 at step S207, and therefore, the delay time Td is eliminated.
綜上所述,由於本發明之資料管理方法可判斷當前儲存在資料暫時儲存裝置13的資料量是否快被讀取完畢(或大於門檻值),如果是,則預先讀取後續資料頁並將後續資料頁的資料儲存至資料暫時儲存裝置13中,因此當主機20發送了讀取指令時,記憶體控制器11可快速的傳送目標資料或從非揮發性記憶體12中讀取目標資料,降低延遲時間Td所造成的影響,不僅減少非揮發性記憶體的讀取次數,更有效減少記憶體控制器11閒置以及等待的時間,大幅增進資料讀取的效率。In summary, the data management method of the present invention can determine whether the data amount currently stored in the data temporary storage device 13 is quickly read (or greater than the threshold), and if so, the subsequent data page is read in advance and The data of the subsequent data page is stored in the data temporary storage device 13, so that when the host 20 sends the read command, the memory controller 11 can quickly transfer the target data or read the target data from the non-volatile memory 12. Reducing the effect of the delay time Td not only reduces the number of readings of the non-volatile memory, but also effectively reduces the idle and waiting time of the memory controller 11, and greatly improves the efficiency of data reading.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何熟習此技術者,在不脫離本發明之精神和範圍內,當可做些許之更動與潤飾,因此本發明之保護範圍當視後付之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any one skilled in the art can make some modifications and retouchings without departing from the spirit and scope of the present invention. The scope is subject to the definition of the patent application scope.
10‧‧‧資料儲存裝置
11‧‧‧記憶體控制器
111‧‧‧第一通訊介面
112‧‧‧第二通訊介面
113‧‧‧第三通訊介面
114‧‧‧微處理器
12‧‧‧非揮發性記憶體
13‧‧‧資料暫時儲存裝置
20‧‧‧主機
S201、S203、S205、S207、S209、S211、S213‧‧‧步驟
P1、P2、P3、P4、P5、P6、P7、P8‧‧‧資料頁
T1、T2、T3、T31、T32、T33、T5、T6、T7、T8‧‧‧時間
a11、a12、a13、a21、a22、a23、a31、a32、a33、b11、b12、b13、b21、b22、b23、c11、c12、c13、c21、c22、c23、d11、d12、d13‧‧‧資料
Td‧‧‧延遲時間
Ts‧‧‧待命時間10‧‧‧Data storage device
11‧‧‧ memory controller
111‧‧‧First Communication Interface
112‧‧‧Second communication interface
113‧‧‧ third communication interface
114‧‧‧Microprocessor
12‧‧‧ Non-volatile memory
13‧‧‧Information temporary storage device
20‧‧‧Host
S201, S203, S205, S207, S209, S211, S213‧‧ steps
P1, P2, P3, P4, P5, P6, P7, P8‧‧‧ data pages
T1, T2, T3, T31, T32, T33, T5, T6, T7, T8‧‧‧ time
A11, a12, a13, a21, a22, a23, a31, a32, a33, b11, b12, b13, b21, b22, b23, c11, c12, c13, c21, c22, c23, d11, d12, d13‧‧ data
Td‧‧‧Delayed time
Ts‧‧‧ Standby time
圖1為本發明之資料儲存裝置實施例示意圖。 圖2為本發明之資料管理方法步驟實施例示意圖。 圖3為本發明之資料頁實施例示意圖。 圖4A為資料管理方式實施例示意圖。 圖4B為本發明之資料管理方式實施例示意圖。1 is a schematic diagram of an embodiment of a data storage device of the present invention. 2 is a schematic diagram of an embodiment of a step of a data management method according to the present invention. 3 is a schematic diagram of an embodiment of a data page of the present invention. 4A is a schematic diagram of an embodiment of a data management method. FIG. 4B is a schematic diagram of an embodiment of a data management method according to the present invention.
S201、S203、S205、S207、S209、S211、S213‧‧‧步驟 S201, S203, S205, S207, S209, S211, S213‧‧ steps
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| TW200951969A (en) * | 2008-06-06 | 2009-12-16 | Phison Electronics Corp | Memory management method for non-volatile memory and controller using the same |
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