TWI603501B - Electrode structure of nitride-based light emitting diode - Google Patents

Description

Electrode structure of nitride light-emitting diode

The invention relates to an electrode structure of a nitride light-emitting diode, in particular to an electrode structure having an insulating layer completely covering the adhesion layer and the aluminum alloy metal layer, and the current can flow through the adhesion layer and the aluminum alloy metal layer. Solving the shortcomings of the prior metal nitride light-emitting diodes under the high current operation, the aluminum alloy metal element is easy to produce an electro-migration effect, and the reliability of the nitride light-emitting diode is improved, and the aluminum alloy metal electrode is retained. The high reflectivity advantage maintains the light extraction rate of the LED components.

According to the invention of the prior nitride light-emitting diode, the research and development personnel can make the light-emitting diode produce white light by the principle of color complementation, and the nitride light-emitting diode has been widely used in the market, for example: Mobile phone screens, car panels, TV screens and other products are products that are often touched by everyday life, and in the future, with continuous research and development and lower costs, there is a better chance to replace the market of incandescent bulbs and fluorescent lamps in the future. The role played by the phosphorescent diode is even more important.

In the prior art, due to the relationship between the refractive index and the internal material, the light in the light-emitting diode is easily absorbed and cannot be completely transmitted, in order to increase the light extraction rate of the light-emitting diode, increase the reflectance of the electrode metal layer, and increase For the performance of current conduction, a light-emitting diode of pure aluminum metal electrode has been developed to improve the performance of the light-emitting diode; however, if pure aluminum metal is used as the material of the electrode, it will be generated during the use of the light-emitting diode. The electro-migration effect causes a slight hole in the electrode metal, which may cause the electrode metal to be hollowed out or splashed, causing damage to the light-emitting diode, which is extremely reliable.

In order to solve the above problem, an electrode having an aluminum alloy metal layer is further developed, as shown in the fourth figure of the figure, which is an electrode structure of a nitride diode of the prior art, which comprises a light-emitting diode body (3). And an electrode structure (4) disposed on the surface of the body (3) of the light-emitting diode. The electrode structure (4) is a current blocking layer (41), a transparent conductive layer (42), and an adhesion layer, respectively, from bottom to top. 43), an aluminum alloy metal layer (44), a barrier layer (45), and a metal layer (46) for wire bonding. Thus, it is known that the prior art is an adhesion layer (43) and a barrier in the electrode structure (4). A layer of aluminum and gold metal (44) is formed between the layers (45) to suppress the generation of electro-migration effects of the electrode metal.

For example, the Republic of China Patent Publication No. TW I497767 (B) "Electrode of Group III-V Luminescent Diode" is a prior patent of the applicant of the present invention, which discloses a III-V LED dipole having an aluminum alloy metal layer. The electrode of the body is caused by the fact that an aluminum alloy metal layer is directly grown on the adhesion layer of the electrode to solve the problem that the electro-migration effect of the pure aluminum metal electrode of the previous light-emitting diode under the high current operation is generated; The method of directly growing an aluminum alloy metal layer on the adhesion layer, because the current still flows through the adhesion layer and the aluminum alloy metal layer, and the electrode causes an electro-migration effect, and the defect cannot be borrowed. This technology is completely solved.

Nowadays, the inventor is that in view of the fact that the electrode structure of the above-mentioned conventional nitride light-emitting diode has many defects in actual use, it is a tireless spirit, and with its rich professional knowledge and many years of practical experience. The invention was assisted and improved, and the present invention was developed based on this.

The main object of the present invention is to provide an electrode structure of a nitride light-emitting diode, which has an electrode structure in which an insulating layer completely covers the adhesion layer and the aluminum alloy metal layer, so as to isolate current flowing through the adhesion layer and the aluminum alloy metal layer. Solving the disadvantage that the aluminum alloy metal element is prone to electro-migration effect under the high current operation of the nitride light-emitting diode, improving the reliability of the nitride light-emitting diode and maintaining the high reflection of the aluminum alloy metal electrode The rate advantage maintains the light extraction rate of the light-emitting diode elements.

In order to achieve the above-mentioned implementation, an electrode structure of a nitride light-emitting diode has a light-emitting diode body and a plurality of electrode structures disposed on the body of the light-emitting diode, wherein each electrode structure is connected to the light-emitting diode A current blocking layer, a transparent conductive layer, an adhesion layer, an aluminum alloy metal layer, an insulating layer, a barrier layer and a metal layer for forming a wire are sequentially formed on the surface of the body body, wherein the insulating layer is completely covered and adhered The layer and the aluminum alloy metal layer are insulated from current flowing through the adhesion layer and the aluminum alloy metal layer; preferably, the transparent conductive layer can completely cover the current blocking layer, and the barrier layer can completely cover the insulating layer.

The invention also provides an electrode structure of a nitride light-emitting diode, which has a light-emitting diode body and a plurality of electrode structures disposed on the body of the light-emitting diode, wherein each electrode structure is on the surface of the body of the light-emitting diode Forming a current blocking layer, an adhesion layer, an aluminum alloy metal layer, an insulating layer, a transparent conductive layer, a barrier layer and a metal layer for the wire, wherein the insulating layer completely covers the adhesion layer and the aluminum alloy The metal layer is insulated from the current through the adhesion layer and the aluminum alloy metal layer; preferably, the transparent conductive layer can completely cover the current blocking layer and the insulating layer.

The invention further provides an electrode structure of a nitride light-emitting diode, which has a light-emitting diode body and a plurality of electrode structures disposed on the body of the light-emitting diode, wherein each electrode structure is on the surface of the body of the light-emitting diode Forming an adhesive layer, an aluminum alloy metal layer, an insulating layer, a transparent conductive layer, a barrier layer and a metal layer for the wire, wherein the insulating layer completely covers the adhesion layer and the aluminum alloy metal layer to isolate Current flows through the adhesion layer and the aluminum alloy metal layer; preferably, the transparent conductive layer can completely cover the insulating layer.

In an embodiment of the invention, the insulating layer may be selected, for example, from cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), tantalum nitride (SiN _x ), magnesium oxide (MgO), zirconium dioxide. One of (ZrO ₂ ) and cerium oxide (HfO ₂ ), and the thickness is about 10 nm to 1000 nm.

In an embodiment of the invention, the aluminum alloy metal layer may comprise, for example, one or a combination of two of yttrium, copper, and magnesium as a mirror, and may have a thickness of, for example, about 1 nm to 1000 nm.

In an embodiment of the invention, the adhesion layer may be selected, for example, from one or a combination of chromium and titanium, and may have a thickness of, for example, about 1 nm to 100 nm.

The object of the present invention and its structural and functional advantages will be explained in conjunction with the specific embodiments according to the structure shown in the following drawings, so that the reviewing committee can have a more in-depth and specific understanding of the present invention.

First, the light-emitting diode system of the present invention refers to one of a horizontal nitride light-emitting diode, a vertical nitride light-emitting diode, or a III-V light-emitting diode, and the like. The formation technology of the ontology has been well known in the art of the art, and can be disclosed in the Republic of China Patent Publication No. TW 201438280 (A) "Group III-V Luminous Diodes Preventing Electronic Overflow", TW 201438320 (A) "Manufacturing method of vertical nitride light-emitting diode" and TW 201438271 (A) "horizontal nitride light-emitting diode" are implemented, and these light-emitting diode bodies are not the focus of this creation, so , not to repeat in this creation.

Referring to the first drawing, a cross-sectional view of a preferred embodiment of the present invention, an electrode structure of a nitride light emitting diode includes: a light emitting diode body (1) and a plurality of electrode structures (2) The light-emitting diode body (1), wherein each electrode structure (2) is sequentially formed with a current blocking layer (21) on the surface of the light-emitting diode body (1) by evaporation or sputtering, a transparent conductive layer (22), an adhesion layer (23), an aluminum alloy metal layer (24), an insulating layer (25), a barrier layer (26) and a metal layer (27) for bonding, wherein the insulating layer The layer (25) completely covers the adhesion layer (23) and the aluminum alloy metal layer (24) to insulate current flowing through the adhesion layer (23) and the aluminum alloy metal layer (24); the transparent conductive layer (22) is completely covered by The current blocking layer (21) and the barrier layer (26) completely cover the insulating layer (25). Preferably, the insulating layer (25) is, for example, selected from the group consisting of SiO ₂ , Al ₂ O ₃ , SiN _x , MgO, and One of zirconium (ZrO ₂ ) and cerium oxide (HfO ₂ ), and the thickness is about 10 nm to 1000 nm; the aluminum alloy metal layer (24) may, for example, comprise one or both of bismuth, copper and magnesium. The combination is used as a mirror and has a thickness of about 1 nm to 1000 nm; and the adhesion layer (23) can be selected, for example, from one or a combination of chromium and titanium, and has a thickness of about 1 nm to 100 nm.

2 is a cross-sectional view of a preferred embodiment of the present invention, an electrode structure of a nitride light emitting diode comprising: a light emitting diode body (1) and a plurality of electrode structures (2) Is disposed on the body of the light-emitting diode (1), wherein each electrode structure (2) is sequentially formed with a current blocking layer on the surface of the body of the light-emitting diode (1) by evaporation or sputtering ( 21), an adhesion layer (23), an aluminum alloy metal layer (24), an insulation layer (25), a transparent conductive layer (22), a barrier layer (26), and a metal layer for a wire (27) The insulating layer (25) completely covers the adhesion layer (23) and the aluminum alloy metal layer (24) to block current flow through the adhesion layer (23) and the aluminum alloy metal layer (24); the transparent conductive layer (22) It completely covers the current blocking layer (21) and the insulating layer (25), and the barrier layer (26) completely covers the insulating layer (25). Preferably, the insulating layer (25) may, for example, be selected from the group consisting of cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), tantalum nitride (SiN _x ), magnesium oxide (MgO), zirconium dioxide. One of (ZrO ₂ ) and cerium oxide (HfO ₂ ) and having a thickness of about 10 nm to 1000 nm; the aluminum alloy metal layer (24) may, for example, comprise one or a combination of bismuth, copper, and magnesium. As a mirror, and the thickness is about 1 nm to 1000 nm; the adhesion layer (23) can be selected, for example, from one or a combination of two of chromium and titanium, and has a thickness of about 1 nm to 100 nm.

Referring to FIG. 3 again, a cross-sectional view of a third preferred embodiment of the present invention, an electrode structure of a nitride light emitting diode, comprising: a light emitting diode body (1) and a plurality of electrode structures ( 2) Deploying on the body of the light-emitting diode (1), wherein each electrode structure (2) is sequentially formed with an adhesion layer on the surface of the body (1) of the light-emitting diode by evaporation or sputtering ( 23), an aluminum alloy metal layer (24), an insulating layer (25), a transparent conductive layer (22), a barrier layer (26) and a metal layer (27) for bonding, wherein the insulating layer (25) The cover layer (23) and the aluminum alloy metal layer (24) are completely covered to insulate current through the adhesion layer (23) and the aluminum alloy metal layer (24); the transparent conductive layer (22) completely covers the insulation layer (25) ). Preferably, the insulating layer (25) is, for example, selected from the group consisting of SiO ₂ , Al ₂ O ₃ , SiN _x , MgO, and One of zirconium (ZrO ₂ ) and cerium oxide (HfO ₂ ) and having a thickness of about 10 nm to 1000 nm; the aluminum alloy metal layer (24) may, for example, comprise one or both of bismuth, copper and magnesium. The combination is used as a mirror and has a thickness of about 1 nm to 1000 nm; and the adhesion layer (23) can be selected, for example, from one or a combination of chromium and titanium, and has a thickness of about 1 nm to 100 nm.

It can be seen from the above description that the present invention has the following advantages compared with the prior art:

1. In the invention, the aluminum alloy metal layer and the adhesion layer are covered by the insulating layer, and the current can flow through the adhesion layer and the aluminum alloy metal layer, thereby reducing the damage rate of the nitride light-emitting diode and improving the reliability.

2. The invention has an insulating layer, which enables the nitride light-emitting diode to operate under a large current without causing an electro-migration effect on the aluminum alloy metal layer, and can retain the aluminum alloy metal layer. High reflectivity, maintaining the light extraction rate of the nitride light-emitting diode.

In summary, the electrode structure of the nitride light-emitting diode of the present invention can achieve the intended use efficiency by the above-disclosed embodiments, and the present invention has not been disclosed before the application, and has been fully met. The provisions and requirements of the Patent Law.爰Issuing an application for a patent for invention in accordance with the law, and asking for a review, and granting a patent, is truly sensible.

The illustrations and descriptions of the present invention are merely preferred embodiments of the present invention, and are not intended to limit the scope of the present invention; those skilled in the art, which are characterized by the scope of the present invention, Equivalent variations or modifications are considered to be within the scope of the design of the invention.

this invention

(1) Light-emitting diode body (2) Electrode structure

(21) Current blocking layer (22) Transparent conductive layer

(23) Adhesive layer (24) Aluminum alloy metal layer

(25) Insulation (26) barrier layer

(27) Metal layer for wire bonding

Prior art

(3) Light-emitting diode body (4) Electrode structure

(41) Current blocking layer (42) Transparent conductive layer

(43) Adhesive layer (44) Aluminum alloy metal layer

(45) barrier layer (46) metal layer for wire bonding

First Figure: A cross-sectional view of a preferred embodiment of the present invention.

Second Figure: A cross-sectional view of a second preferred embodiment of the present invention.

Third Figure: A cross-sectional view of a third preferred embodiment of the present invention.

Figure 4: A cross-sectional view of a conventional nitride nitride structure.

(1) Light-emitting diode body (2) Electrode structure (21) Current blocking layer (22) Transparent conductive layer (23) Adhesive layer (24) Aluminum alloy metal layer (25) Insulating layer (26) Barrier layer (27) ) metal layer for wire bonding

Claims (15)

An electrode structure of a nitride light-emitting diode, wherein the nitride light-emitting diode comprises: a light-emitting diode body and a plurality of electrode structures disposed on the light-emitting diode body, wherein each of the electrode structures is Forming a current blocking layer, a transparent conductive layer, an adhesion layer, an aluminum alloy metal layer, an insulating layer, a barrier layer and a metal layer for bonding a wire on the surface of the body of the light emitting diode, wherein the insulating layer The layer completely covers the adhesion layer and the aluminum alloy metal layer to insulate current from flowing through the adhesion layer and the aluminum alloy metal layer. The electrode structure of the nitride light-emitting diode according to claim 1, wherein the transparent conductive layer completely covers the current blocking layer, and the barrier layer completely covers the insulating layer. The electrode structure of the nitride light-emitting diode according to claim 1, wherein the insulating layer is selected from the group consisting of cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), and tantalum nitride ( One of SiN _x ), magnesium oxide (MgO), zirconium dioxide (ZrO ₂ ), and hafnium oxide (HfO ₂ ), and has a thickness of 10 nm to 1000 nm. The electrode structure of a nitride light-emitting diode according to claim 1, wherein the aluminum alloy metal layer comprises one or a combination of two of bismuth, copper and magnesium as a mirror, and The thickness is from 1 nm to 1000 nm. The electrode structure of the nitride light-emitting diode according to claim 1, wherein the adhesion layer is selected from one or a combination of chromium and titanium, and has a thickness of 1 nm to 100 nm. An electrode structure of a nitride light-emitting diode, wherein the nitride light-emitting diode comprises: a light-emitting diode body and a plurality of electrode structures disposed on the light-emitting diode body, wherein each of the electrode structures is Forming a current blocking layer, an adhesion layer, an aluminum alloy metal layer, an insulating layer, a transparent conductive layer, a barrier layer and a metal layer for bonding a wire on the surface of the body of the light emitting diode, wherein the insulating layer The layer completely covers the adhesion layer and the aluminum alloy metal layer to insulate current from flowing through the adhesion layer and the aluminum alloy metal layer. The electrode structure of the nitride light-emitting diode according to claim 6, wherein the transparent conductive layer completely covers the current blocking layer and the insulating layer. The electrode structure of a nitride light-emitting diode according to claim 6, wherein the insulating layer is selected from the group consisting of cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), and tantalum nitride ( One of SiN _x ), magnesium oxide (MgO), zirconium dioxide (ZrO ₂ ), and hafnium oxide (HfO ₂ ), and has a thickness of 10 nm to 1000 nm. The electrode structure of a nitride light-emitting diode according to claim 6, wherein the aluminum alloy metal layer comprises one or a combination of two of bismuth, copper and magnesium as a mirror, and The thickness is from 1 nm to 1000 nm. The electrode structure of the nitride light-emitting diode according to claim 6, wherein the adhesion layer is selected from one or a combination of chromium and titanium, and has a thickness of 1 nm to 100 nm. An electrode structure of a nitride light-emitting diode, wherein the nitride light-emitting diode comprises: a light-emitting diode body and a plurality of electrode structures disposed on the light-emitting diode body, wherein each of the electrode structures is An adhesion layer, an aluminum alloy metal layer, an insulating layer, a transparent conductive layer, a barrier layer and a metal layer for bonding are formed on the surface of the body of the LED body, wherein the insulating layer completely covers the layer The adhesion layer and the aluminum alloy metal layer are insulated from current flowing through the adhesion layer and the aluminum alloy metal layer. The electrode structure of the nitride light-emitting diode according to claim 11, wherein the transparent conductive layer completely covers the insulating layer. The electrode structure of a nitride light-emitting diode according to claim 11, wherein the insulating layer is selected from the group consisting of cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), and tantalum nitride ( One of SiN _x ), magnesium oxide (MgO), zirconium dioxide (ZrO ₂ ), and hafnium oxide (HfO ₂ ), and has a thickness of 10 nm to 1000 nm. The electrode structure of a nitride light-emitting diode according to claim 11, wherein the aluminum alloy metal layer comprises one or a combination of two of bismuth, copper and magnesium as a mirror, and The thickness is from 1 nm to 1000 nm. The electrode structure of the nitride light-emitting diode according to claim 11, wherein the adhesion layer is selected from one or a combination of two of chromium and titanium, and has a thickness of 1 nm to 100 nm.