TWI603486B - Solar cell and solar cell manufacturing method - Google Patents
Solar cell and solar cell manufacturing method Download PDFInfo
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
本發明係關於一種太陽電池及太陽電池的製造方法,該太陽電池係:在基板上製作有照射光線等時會產生高電子濃度的區域,並且在該區域上形成有透射光線等之絕緣膜,且具有從形成在絕緣膜的電子取出口取出電子之匯流電極者。 The present invention relates to a solar cell system in which a region where a high electron concentration is generated when an irradiation light or the like is formed on a substrate, and an insulating film that transmits light or the like is formed on the substrate. And having a bus electrode for taking out electrons from an electron take-out port formed in the insulating film.
以往,利用可再生能源之一之太陽電池,係以20世紀的主角之半導體技術作為基礎而進行其開發。其為影響人類生存之全球級的重要開發。其開發課題不光只有將太陽光轉換成為電能之效率,亦須一邊面臨減低製造成本及無公害的課題而一邊持續進展。就實現該等課題之努力而言,減少電極所使用的銀(Ag)和鉛(Pb)的使用量乃至不使用銀(Ag)和鉛(pb)係特別重要。 In the past, solar cells using one of the renewable energy sources were developed based on the semiconductor technology of the protagonist of the 20th century. It is an important development at the global level that affects human survival. The development of the project is not only the efficiency of converting sunlight into electrical energy, but also continuing to progress while facing the problem of reducing manufacturing costs and pollution. In order to achieve such problems, it is particularly important to reduce the amount of silver (Ag) and lead (Pb) used in the electrode, and not to use silver (Ag) and lead (pb).
一般而言,太陽電池的構造如第10圖(a)的平面圖及(b)的剖面圖所示,係由下列各要素所構成:N型/P型的矽基板43,係將太陽光能源轉換為電能;氮化矽膜45,係防止矽基板43的表面之反射、及係絕緣體薄膜; 指狀電極(finger electrode)42,係取出在矽基板43中產生的電子;匯流排電極(bus bar electrode)41,收集指狀電極42所取出的電子;引出導線47,係將收集至匯流排電極41的電子取出至外部。 In general, the structure of the solar cell is as shown in the plan view of Fig. 10(a) and the cross-sectional view of (b), and is composed of the following elements: an N-type/P-type ruthenium substrate 43, which is a solar energy source. Converting into electric energy; the tantalum nitride film 45 is for preventing reflection of the surface of the tantalum substrate 43, and is an insulator film; A finger electrode 42 takes out electrons generated in the ruthenium substrate 43; a bus bar electrode 41 collects electrons taken out by the finger electrode 42; and a lead wire 47 that is collected to the bus bar The electrons of the electrode 41 are taken out to the outside.
其中,在匯流排電極(匯流排電極)41及指狀電極42係使用銀及鉛(鉛玻璃),理想為削除或減少該銀的使用量,而進一步係減少或削除鉛(鉛玻璃)的使用量,成為低成本且無公害。 Among them, silver and lead (lead glass) are used for the bus bar electrode (bus bar electrode) 41 and the finger electrode 42, and it is preferable to reduce or reduce the amount of silver used, and further reduce or remove lead (lead glass). The amount of use is low cost and pollution-free.
上述以往之第10圖的太陽電池之構成要素中,係在指狀電極42等使用銀及鉛(作為黏結劑之鉛玻璃),而有削除或減少該銀的使用量,及減少或削除鉛(鉛玻璃)的使用量,使太陽電池的製造成本減低且成為無公害之課題。 In the components of the solar cell of the above-described tenth embodiment, silver and lead (lead glass as a binder) are used for the finger electrodes 42 and the like, and the amount of silver used is reduced or reduced, and lead is reduced or removed. The use amount of (lead glass) reduces the manufacturing cost of the solar cell and becomes a problem of no pollution.
本發明人等發現,於膏使用後述的NTA玻璃100%而實驗性地製成匯流電極等時,能夠製作出具有與使用上述傳統的銀膏來製作匯流電極等時相比為相當或較優異的特性之太陽電池(後述)。 The inventors of the present invention have found that it is possible to produce a bus electrode or the like when the paste is used 100% of the NTA glass to be described later, and it is possible to produce a bus electrode or the like which is superior or superior to the conventional silver paste. The characteristics of the solar cell (described later).
本發明基於該等發現,為了減少或削除銀的使用量,以及減少或削除鉛(鉛玻璃)的使用量,在形成太陽電池的構成要素之匯流電極(匯流排電極)等時,係以釩酸鹽玻璃(以下稱為導電性的NTA玻璃,”NTA”為日 本註冊商標5009023號)製作膏而進行燒製,能夠削除或減少銀及鉛(鉛玻璃)的使用量。 The present invention is based on the findings that in order to reduce or eliminate the amount of silver used, and to reduce or eliminate the amount of lead (lead glass) used, vanadium is formed when forming a bus electrode (bus bar electrode) of a constituent element of a solar cell. Acid crystal glass (hereinafter referred to as conductive NTA glass, "NTA" is the day This registered trademark 5009023) is prepared by firing a paste to remove or reduce the amount of silver and lead (lead glass) used.
因此,本發明係設成:在基板上製作有照射光等時會產生高電子濃度的區域,並且在該區域上形成有透射光線等的絕緣膜,且具有從形成在絕緣膜的電子取出口取出電子的匯流電極之太陽電池,其中,為了形成匯流電極,在導電性膏中係以重量比100%之導電性玻璃作為玻璃料進行燒製而形成匯流電極,而使用了導電性玻璃作為導電性膏。 Therefore, the present invention is such that an area where a high electron concentration is generated when irradiated light or the like is formed on a substrate, and an insulating film that transmits light or the like is formed on the area, and has an electron extraction port formed from the insulating film. A solar cell in which an electron sink electrode is taken out, wherein, in order to form a bus electrode, a conductive glass is fired as a glass frit in a conductive paste to form a bus electrode, and conductive glass is used as a conductive electrode. Sexual cream.
此時,係將導電性玻璃設為重量比100%至71%、將剩餘設為銀,以取代重量比100%之導電性玻璃。 In this case, the conductive glass is set to have a weight ratio of 100% to 71%, and the remainder is made of silver instead of 100% by weight of the conductive glass.
又,導電性玻璃係設為至少含有釩、或釩及鋇的釩酸鹽玻璃。 Further, the conductive glass is a vanadate glass containing at least vanadium or vanadium and niobium.
又,混入導電性玻璃而進行燒製之步驟的時間,最長設為1分鐘以內,且為1秒以上。 Moreover, the time of the step of baking the conductive glass and baking is set to the maximum of 1 minute or less, and it is 1 second or more.
又,導電性玻璃係設為無Pb。 Moreover, the conductive glass system was made to have no Pb.
又,在已燒製指狀電極時,指狀電極係設為具有一端位於高電子濃度區域,且在另一端形成與匯流電極的上表面為相同高度的部分、或穿出而於上表面突出的部分。 Further, when the finger electrode is fired, the finger electrode is formed to have a portion having a high electron concentration region at one end and a portion having the same height as the upper surface of the bus electrode at the other end, or to protrude and protrude on the upper surface. part.
又,係設為在經燒製而形成的匯流電極之上設置導線電極。 Further, it is assumed that a wire electrode is provided on the bus electrode formed by firing.
又,係設為在經燒製而形成的匯流電極之上以超音波焊接形成導線電極,接合於與導線電極相接的 匯流電極、指狀電極及其他部分,使導線電極的接著強度提升。 Further, it is assumed that the wire electrode is formed by ultrasonic welding on the bus electrode formed by firing, and is bonded to the wire electrode. The bus electrode, the finger electrode and other parts increase the bonding strength of the wire electrode.
本發明係如上所述,藉由使用100%之導電性的NTA玻璃,甚至為71%左右(亦可更減少含量)取代傳統的銀膏而進行燒製,能夠削除或減少在傳統的銀膏中之銀的使用量,且能減少或削除鉛(鉛玻璃)的利用量。藉此,而具有下述的特徴。 The present invention is capable of removing or reducing the conventional silver paste by using 100% conductive NTA glass, or even 71% (or less) content instead of the conventional silver paste. The amount of silver used, and can reduce or eliminate the use of lead (lead glass). Thereby, it has the following characteristics.
第1,係在形成太陽電池的匯流排電極(匯流電極)時,使用為導電性的釩酸鹽玻璃之100%、甚至71%左右之NTA玻璃(日本註冊商標第5009023號,日本專利第5333976號)取代銀膏,能夠削除或減少Ag的使用量,且能減少或削除鉛(鉛玻璃)的使用量。 First, when forming a bus bar electrode (bus bar electrode) of a solar cell, NTA glass which is 100% or even 71% of conductive vanadate glass is used (Japanese registered trademark No. 5009023, Japanese Patent No. 5333976) No.) replaces the silver paste, which can reduce or reduce the amount of Ag used, and can reduce or eliminate the use of lead (lead glass).
第2,藉由於匯流排電極(匯流排電極)使用NTA玻璃100%至71%左右(亦可更減少含量),於現階段得到的初期實驗結果,係能形成將太陽光能源轉換為電子能量之效率為幾乎同等或者稍高、並發揮作為匯流排電極之效果的電極(參照第9圖)。咸認此係因為NTA玻璃為如下者:(1)具有導電性;(2)藉由使用NTA玻璃,指狀電極係形成與該匯流排電極(匯流電極)之上表面為相同高度的部分、或穿出而於上表面突出的部分,該等部分係以導線的超音波焊接而接合,就結果而言,係直接以指狀電極連接高電子濃度區域與導線;其他的要素(例如參照下述的「第3」)所造成。 Secondly, since the bus bar electrodes (bus bar electrodes) use NTA glass by 100% to 71% (and can also reduce the content), the initial experimental results obtained at this stage can form the conversion of solar energy into electron energy. The efficiency is an electrode which is almost equal to or slightly higher and exhibits an effect as a bus bar electrode (see Fig. 9). It is noted that the NTA glass is as follows: (1) having conductivity; (2) by using NTA glass, the finger electrode is formed at a portion having the same height as the upper surface of the bus bar electrode (sink electrode), Or a portion that protrudes from the upper surface, and the portions are joined by ultrasonic welding of the wires. As a result, the high electron concentration region and the wire are directly connected by the finger electrodes; other elements (for example, refer to Caused by the "3rd" mentioned.
第3,不同於以往之處在於,指狀電極的形成與匯流排電極的形成係使用含有不同的玻璃料之膏(paste)。以往,在指狀電極的形成,需產生被稱為鍛燒(firing)之現象。此係藉由被用作為銀的燒結助劑的玻璃料中之成分分子,例如鉛玻璃中之鉛分子的作用,以突破形成於矽基板的表層的氮化矽膜之絕緣層而形成指狀電極之方式,而有效率地收集在矽基板所生成的電子。但是,關於匯流排電極的形成,鍛燒現象並非必須者。以往,匯流排電極亦將含有鉛成分的鉛玻璃作為燒結助劑而進行燒結,因此構造雖然不同,但會形成匯流排電極與矽基板間的電性導通而降低轉換效率。藉由在形成匯流排電極時使用不會產生鍛燒現象之NTA玻璃作為燒結助劑,可以削除轉換效率之降低。 Third, unlike the past, the formation of the finger electrodes and the formation of the bus bar electrodes use a paste containing a different glass frit. Conventionally, in the formation of a finger electrode, a phenomenon called firing is required. This is formed by using a component molecule in a frit used as a sintering aid for silver, for example, a lead molecule in lead glass, to break through an insulating layer of a tantalum nitride film formed on the surface layer of the tantalum substrate to form a finger. The electrodes are used to efficiently collect the electrons generated on the germanium substrate. However, with regard to the formation of the bus bar electrodes, the calcination phenomenon is not essential. Conventionally, the bus bar electrode also sinters the lead glass containing the lead component as a sintering aid. Therefore, the structure is different, but electrical conduction between the bus bar electrode and the ruthenium substrate is formed to reduce the conversion efficiency. By using NTA glass which does not cause calcination as a sintering aid when forming the bus bar electrode, the reduction in conversion efficiency can be eliminated.
第4,係有使用銀粉末材料所導致之太陽電池的成本高(原材料費高)之問題。而且,亦浮現由於過度地需求銀材料所致之材料調度問題。咸認即使將導電玻璃之NTA玻璃的含有比率大幅地增加至100%至71%,並對應該增加量而減少銀量,亦能夠製作出不會降低轉換效率太陽電池一事,會對產業界產生重大的衝擊。 Fourth, there is a problem that the cost of the solar cell caused by the use of the silver powder material is high (the raw material cost is high). Moreover, material scheduling problems due to excessive demand for silver materials have emerged. Even if the content ratio of the NTA glass of the conductive glass is greatly increased to 100% to 71%, and the amount of silver should be increased by increasing the amount, the solar cell can be produced without lowering the conversion efficiency, and it will be produced by the industry. A major impact.
第5,係不使用在以往的匯流排電極之形成所一直使用的鉛玻璃,亦即,能夠無鉛化。藉此,能夠完全避免鉛公害的環境問題。 Fifthly, the lead glass which has been used in the formation of the conventional bus bar electrode is not used, that is, it can be lead-free. Thereby, the environmental problem of lead pollution can be completely avoided.
11‧‧‧矽基板 11‧‧‧矽 substrate
12‧‧‧高電子濃度區域(擴散摻雜) 12‧‧‧High electron concentration region (diffusion doping)
13‧‧‧絕緣膜(氮化矽膜) 13‧‧‧Insulating film (tantalum nitride film)
14‧‧‧電子取出口(指狀電極) 14‧‧‧Electronic take-out (finger electrode)
15‧‧‧匯流排電極 15‧‧‧ bus bar electrode
16‧‧‧背面電極 16‧‧‧Back electrode
17‧‧‧導線 17‧‧‧Wire
第1圖係本發明之1實施例構造圖(步驟的完成圖:剖 面圖)。 Fig. 1 is a structural view of an embodiment of the present invention (completed step of the step: section Face view).
第2圖係本發明之動作說明流程圖。 Fig. 2 is a flow chart showing the operation of the present invention.
第3圖係本發明之詳細步驟說明圖(其之1)。 Figure 3 is a detailed step-by-step diagram of the present invention (part 1).
第4圖係本發明之詳細步驟說明圖(其之2)。 Figure 4 is a detailed step-by-step diagram of the present invention (part 2).
第5圖係本發明之詳細說明圖(匯流排電極的燒製)。 Fig. 5 is a detailed explanatory view of the present invention (baking of the bus bar electrode).
第6圖係本發明之說明圖(匯流排電極)。 Fig. 6 is an explanatory view (bus bar electrode) of the present invention.
第7圖係本發明之說明圖(匯流排電極)。 Fig. 7 is an explanatory view (bus bar electrode) of the present invention.
第8圖係本發明之說明圖(超音波焊接)。 Figure 8 is an explanatory view of the present invention (ultrasonic welding).
第9圖係本發明之測定例(效率)。 Fig. 9 is a measurement example (efficiency) of the present invention.
第10圖係以往技術的說明圖。 Fig. 10 is an explanatory view of the prior art.
第1圖係顯示本發明之1實施例構造圖(步驟的完成圖:剖面圖)。 Fig. 1 is a view showing the construction of an embodiment of the present invention (completed view of the steps: sectional view).
於第1圖中,矽基板11為公知的半導體矽基板。 In the first drawing, the ruthenium substrate 11 is a known semiconductor ruthenium substrate.
高電子濃度區域(擴散摻雜層)12係藉由擴散摻雜等於矽基板11之上形成有所期望的p型/n型的層之公知的區域(層),在圖中從上方向入射太陽光時,會在矽基板11產生電子(發電)且積蓄該電子之區域。在此,所積蓄的電子係藉由電子取出口(指狀電極(銀))14朝上方向被取出(參照發明之效果)。 The high electron concentration region (diffusion doped layer) 12 is a diffusion-doped region equal to a known region (layer) on which a desired p-type/n-type layer is formed on the germanium substrate 11, and is incident from the upper direction in the drawing. In the case of sunlight, an area where electrons (power generation) are generated on the substrate 11 and the electrons are accumulated. Here, the accumulated electrons are taken out in the upward direction by the electronic take-out port (finger electrode (silver)) 14 (refer to the effect of the invention).
絕緣膜(氮化矽膜)13係使太陽光通過(穿透)且使匯流排電極15與高電子濃度區域14電性絕緣之公知 的膜。 The insulating film (tantalum nitride film) 13 is known to pass (penetrate) sunlight and electrically insulate the bus bar electrode 15 from the high electron concentration region 14. Membrane.
電子取出口(指狀電極(銀))14係經由形成在絕緣膜13的孔穴而將積蓄在高電子濃度區域12中的電子取出之口(指狀電極)。指狀電極14在本發明中如圖所示,當以NTA玻璃100%(至71%左右)燒製匯流排電極15時,指狀電極14係形成(燒製成)與匯流排電極15之上表面為相同高度的部分、或穿出而於上表面突出的部分,而可經由該指狀電極14使高電子濃度區域12中的電子直接流入至導線17(直接取出電子)。亦即,可用高電子濃度區域12、指狀電極14、匯流排電極15、導線17的路徑1(傳統的路徑1),與高電子濃度區域12、指狀電極14、導線17的路徑2(本發明所追加的路徑2)這2條路徑將高電子濃度區域12中的電子(電流)經由導線17取出至外部,就結果而言,係可使高電子濃度區域12與導線17之間的電阻值為非常小,減低損失,就結果而言係可提升太陽電池的效率。 The electron extraction port (finger electrode (silver)) 14 is a port (finger electrode) through which electrons accumulated in the high electron concentration region 12 are taken out through holes formed in the insulating film 13. In the present invention, as shown in the figure, when the bus bar electrode 15 is fired by 100% (to about 71%) of the NTA glass, the finger electrode 14 is formed (fired) and the bus bar electrode 15 is formed. The upper surface is a portion of the same height or a portion that protrudes and protrudes from the upper surface, and electrons in the high electron concentration region 12 can be directly flowed into the wire 17 (directly extracting electrons) via the finger electrode 14. That is, the high electron concentration region 12, the finger electrode 14, the bus bar electrode 15, the path 1 of the wire 17 (traditional path 1), and the high electron concentration region 12, the finger electrode 14, and the path 2 of the wire 17 can be used ( The path 2) added by the present invention takes the electrons (current) in the high electron concentration region 12 to the outside via the wire 17, and as a result, the high electron concentration region 12 and the wire 17 can be made. The resistance value is very small, reducing the loss, and as a result, improving the efficiency of the solar cell.
匯流排電極(電極1(NTA玻璃100%))15係電性連接複數個電子取出口(指狀電極)14之電極,為不使用到Ag或削減Ag的使用量之對象的電極(參照發明之效果)。 The bus bar electrode (electrode 1 (NTA glass 100%)) 15 is an electrode that electrically connects a plurality of electron extraction ports (finger electrodes) 14 and is an electrode that does not use Ag or reduces the amount of Ag used (refer to the invention) Effect).
背面電極(電極2(鋁))16係形成在矽基板11的下面之公知的電極。 The back electrode (electrode 2 (aluminum)) 16 is a well-known electrode formed on the lower surface of the ruthenium substrate 11.
導線(焊接形成)17,係電性連接複數個匯流排電極15的將電子(電流I)取出至外部的導線;或更進一步將該導線超音波焊接而接合在本發明中之指狀電極14 與匯流排電極15的上表面為相同高度的部分或穿出匯流排電極15的上表面的部分,而將電子(電流)取出至外部的導線。 A wire (welding formation) 17 electrically connecting a plurality of bus bar electrodes 15 for taking out electrons (current I) to the outside; or further ultrasonically bonding the wires to the finger electrodes 14 of the present invention A portion having the same height as the upper surface of the bus bar electrode 15 or a portion passing through the upper surface of the bus bar electrode 15 takes out electrons (current) to the external wires.
基於以上之第1圖的構造,從上往下方向照射太陽光時,太陽光係通過無導線17和無電子取出口14的部分及絕緣膜13,入射至矽基板11而產生電子。然後,積蓄於高電子濃度區域12的電子,係經由電子取出口(指狀電極)14、匯流排電極15、導線17的路徑1,以及電子取出口(指狀電極)14、導線17的路徑2這兩個路徑被取出至外部。此時,如後述之第2圖至第9圖,在焊膏中混入100%至71%(亦可更少,參照第9圖)之NTA玻璃(導電性玻璃)作為玻璃料且進行燒製而形成匯流排電極15,能夠不使用Ag或減低Ag的使用量。以下將依序詳細地說明。 According to the structure of Fig. 1 described above, when sunlight is irradiated from the top to the bottom, the sunlight passes through the portion of the non-conductive wire 17 and the electron-free take-out port 14 and the insulating film 13, and enters the ruthenium substrate 11 to generate electrons. Then, the electrons accumulated in the high electron concentration region 12 pass through the electronic take-out port (finger electrode) 14, the bus bar electrode 15, the path 1 of the wire 17, and the path of the electron take-out port (finger electrode) 14 and the wire 17. 2 These two paths are taken out to the outside. At this time, as shown in FIG. 2 to FIG. 9 to be described later, 100% to 71% (or less, see FIG. 9) of NTA glass (conductive glass) is mixed into the solder paste as a glass frit and fired. Forming the bus bar electrode 15 can eliminate the use of Ag or reduce the amount of Ag used. The details will be described in detail below.
第2圖係表示本發明之動作說明流程圖,第3圖及第4圖係表示各步驟的詳細構造。 Fig. 2 is a flow chart showing the operation of the present invention, and Figs. 3 and 4 show the detailed construction of each step.
在第2圖中,S1係準備矽基板。 In Fig. 2, S1 is a substrate for preparation.
S2係進行清洗。該等S1、S2係如第3圖(a)所示,將在S1所準備的矽基板11之面(形成高電子濃度區域12的面)良好地清洗。 The S2 system is cleaned. As shown in Fig. 3(a), these S1 and S2 are well cleaned on the surface of the tantalum substrate 11 prepared in S1 (the surface on which the high electron concentration region 12 is formed).
S3係進行擴散摻雜。此係如第3圖(b)所示,在第3圖(a)所清洗過的矽基板11之上進行公知的擴散摻雜,形成高電子濃度區域12。 The S3 system performs diffusion doping. As shown in FIG. 3(b), a known diffusion doping is performed on the germanium substrate 11 cleaned in FIG. 3(a) to form a high electron concentration region 12.
S4係形成抗反射膜(氮化矽膜)。此係如第3圖(c)所示,在形成第3圖(b)的高電子濃度區域12後,藉 由公知的手法形成例如氮化矽膜作為抗反射膜(使太陽光通過,而且盡可能減少表面反射之膜)。 S4 forms an antireflection film (tantalum nitride film). This is shown in Fig. 3(c), after forming the high electron concentration region 12 of Fig. 3(b), For example, a tantalum nitride film is formed as an antireflection film (a film that allows sunlight to pass through and minimizes surface reflection) by a known method.
S5係網版印刷指狀電極。此係如第3圖(d)所示,在形成第3圖(c)的氮化矽膜13後,網版印刷形成之指狀電極14的圖案。印刷材料係例如使用在銀混入鉛玻璃作為玻璃料(frit)者。 S5 is a screen printed finger electrode. This is a pattern of the finger electrodes 14 formed by screen printing after forming the tantalum nitride film 13 of FIG. 3(c) as shown in FIG. 3(d). The printing material is used, for example, in which silver is mixed with lead glass as a frit.
S6係對指狀電極進行燒製且使其燒穿(fire-through)。此係對第3圖(d)的進行網版印刷後之指狀電極14的圖案(混入銀與鉛玻璃的玻璃料而成者)進行燒製,如第3圖(e)所示,使氮化矽膜13燒穿而形成於其中形成有銀(導電性)之指狀電極14。 The S6 system fires the finger electrodes and fire-throughs them. This is to burn the pattern of the finger electrodes 14 (the glass frit mixed with silver and lead glass) after screen printing in FIG. 3(d), as shown in FIG. 3(e), The tantalum nitride film 13 is burned through to form a finger electrode 14 in which silver (conductivity) is formed.
S7係網版印刷匯流排電極(電極1)。此係如第4圖(f)所示,在形成第3圖(e)的指狀電極14後,網版印刷形成匯流排電極15的圖案。印刷材料係例如使用NTA氣體(100%)者作為玻璃料。 The S7 is a screen printing bus bar electrode (electrode 1). As shown in FIG. 4(f), after the finger electrodes 14 of FIG. 3(e) are formed, the pattern of the bus bar electrodes 15 is formed by screen printing. The printing material is, for example, a glass frit using NTA gas (100%).
S8係燒製匯流排電極。此係對在第3圖(f)的進行網版印刷後之匯流排電極15的圖案(NTA玻璃(100%)的玻璃料)進行燒製(燒製時間即便較長亦為1分以內,燒製1至3秒以上),如第4圖(g)所示,匯流排電極15係形成於最上層,且為本發明之特徴,指狀電極14係形成與形成於其最上層的匯流排電極15之上表面為相同高度的部分、或穿出匯流排電極15之上表面的部分。 The S8 system fires the bus bar electrodes. This is to burn the pattern of the bus bar electrode 15 (NTA glass (100%) frit) after screen printing in FIG. 3(f) (the firing time is within 1 minute even if it is long, The firing is performed for 1 to 3 seconds or longer. As shown in FIG. 4(g), the bus bar electrode 15 is formed on the uppermost layer, and is a feature of the present invention, and the finger electrode 14 is formed and formed on the uppermost layer of the confluence. The upper surface of the discharge electrode 15 is a portion of the same height or a portion that passes through the upper surface of the bus bar electrode 15.
此外,進行S5及S7的印刷,亦可將兩者同時燒製。 In addition, printing of S5 and S7 may be performed, or both may be fired at the same time.
S9係形成背面電極(電極2)。此係如第4圖(h)所示,於矽基板11的下側(背面)形成例如鋁電極。 S9 forms a back electrode (electrode 2). As shown in FIG. 4(h), for example, an aluminum electrode is formed on the lower side (back surface) of the ruthenium substrate 11.
S10係以焊料形成導線。此係如第4圖(i)所示,以焊料形成,例如以超音波焊接而形成電性連接第4圖(g)的匯流排電極之導線並電性連接,則可以高電子濃度區域12、指狀電極14、匯流排電極16、導線17的路徑1(傳統的路徑1),與高電子濃度區域12、指狀電極14、導線17的路徑2(本發明所追加的路徑2)這兩種路徑,將高電子濃度領域12中的電子(電流)經由導線17取出至外部,可以使高電子濃度區域12與導線17之間的電阻值為非常小而減少損失,進而提升太陽電池的效率。亦即,本發明所追加的路徑2係指狀電極14的一端位於高電子濃度區域12之中,且具有另一端與NTA玻璃100%之匯流排電極15的上表面為相同高度的部分或穿出匯流排電極15之上表面的部分,並於該部分直接接合(以超音波焊接直接接合)導線,因此形成高電子濃度區域12、指狀電極14、導線17的路徑2。又,路徑1為傳統的路徑。 S10 is a wire formed of solder. This is shown in FIG. 4(i), and is formed by soldering, for example, by ultrasonic welding to form a wire electrically connected to the bus bar electrode of FIG. 4(g) and electrically connected, so that the electron concentration region 12 can be high. The finger 1 (the conventional path 1) of the finger electrode 14, the bus bar electrode 16, and the wire 17, and the path 2 of the high electron concentration region 12, the finger electrode 14, and the wire 17 (the path 2 added by the present invention) In both paths, the electrons (current) in the high electron concentration region 12 are taken out to the outside via the wire 17, so that the resistance value between the high electron concentration region 12 and the wire 17 can be made very small to reduce the loss, thereby improving the solar cell. effectiveness. That is, the path 2 added by the present invention is such that one end of the finger electrode 14 is located in the high electron concentration region 12 and has the same height or the same end as the upper surface of the bus bar electrode 15 of the NTA glass 100%. A portion of the upper surface of the bus bar electrode 15 is taken out, and the wire is directly joined (directly bonded by ultrasonic welding) to the portion, thereby forming a path 2 of the high electron concentration region 12, the finger electrode 14, and the wire 17. Also, path 1 is a traditional path.
藉由以上的步驟,能夠於矽基板製作太陽電池。 By the above steps, the solar cell can be fabricated on the germanium substrate.
第5圖係表示本發明之詳細說明圖(匯流排電極的燒製)。 Fig. 5 is a detailed explanatory view of the present invention (firing of the bus bar electrode).
第5圖(a)係示意性表示以銀100%、NTA0%(重量比)燒製匯流排電極之例,第5圖(b)係示意性表示以銀50%、NTA50%(重量比)燒製匯流排電極之例,第5圖(c) 係示意性表示以NTA100%(重量比)燒製匯流排電極之例。燒製時間即便較長亦為1分以內,且設為1至3秒以上。 Fig. 5(a) is a view schematically showing an example of firing a bus bar electrode with silver of 100% and NTA0% by weight, and Fig. 5(b) is a schematic representation of 50% of silver and 50% by weight of NTA. Example of firing a bus bar electrode, Figure 5 (c) An example of firing a bus bar electrode with NTA 100% by weight is schematically shown. The firing time is within 1 minute even if it is long, and it is set to 1 to 3 seconds or longer.
如第5圖(a)、第5圖(b)及第5圖(c)之圖示,以成為大致相同構造之方式所形成的太陽電池之試作實驗,可得到如下述的實驗結果。 As shown in Fig. 5 (a), Fig. 5 (b), and Fig. 5 (c), the experimental results of the solar cell formed by the substantially identical structure were obtained.
試作實驗結果,就印刷匯流排電極的圖案之材料而言,在第5圖(a)及第5圖(b)製成太陽電池時的轉換效率為平均約17.0%,係得到大致相同的結果,再者,在第5圖(c)係得到轉換效率為平均約17.2%。由初期實驗結果得知,該等第5圖(a)至(c)均於大致相同的轉換效率之範圍內,或者第5圖(c)的NTA 100%為稍高的轉換效率。此外,NTA玻璃係由釩、鋇、鐵所構成,特別是鐵係在內部強力地鍵結且殘留於該內部,具有即便與其他材料混合其結合性亦極小的性質(參照日本專利第5333976號等),更且推測是由所述的本發明之高電子濃度區域與導線之間的路徑(路徑1與路徑2並列)之改善所致。 As a result of the test, the conversion efficiency of the solar cell when the solar cell was fabricated in Fig. 5(a) and Fig. 5(b) was about 17.0% in terms of the material of the pattern of the printed bus bar electrode, and the results were substantially the same. Furthermore, in Fig. 5 (c), the conversion efficiency was about 17.2% on average. From the initial experimental results, it is known that the fifth graphs (a) to (c) are all within the range of substantially the same conversion efficiency, or the NTA 100% of the fifth graph (c) is slightly higher conversion efficiency. In addition, the NTA glass is composed of vanadium, niobium, and iron. In particular, the iron system is strongly bonded internally and remains inside, and has a property of being extremely small even when mixed with other materials (refer to Japanese Patent No. 5333976). Further, it is presumed that the high electron concentration region of the present invention and the path between the wires (the path 1 and the path 2 are juxtaposed) are improved.
第6圖及第7圖係表示本發明之說明圖(匯流排電極)。 Fig. 6 and Fig. 7 are explanatory views (bus bar electrodes) of the present invention.
第6圖(a)及第6圖(b)為NTA 50%、Ag50% 者,其中,第6圖(a)係表示全體平面圖,第6圖(b)係表示放大圖。第7圖(c)為NTA 100%、Ag 0%者,而第7圖(c)係表示放大圖。 Figure 6 (a) and Figure 6 (b) are NTA 50%, Ag50% Here, Fig. 6(a) shows a general plan view, and Fig. 6(b) shows an enlarged view. Fig. 7(c) shows NTA 100% and Ag 0%, and Fig. 7(c) shows an enlarged view.
於第6圖(a)及第6圖(b)中,匯流排電極15係如第6圖(a)的全體平面圖所示,為長條狀的電極,將此以光學顯微鏡放大時,可觀察到如第6圖(b)所示的構造。 In FIGS. 6(a) and 6(b), the bus bar electrode 15 is an elongated electrode as shown in the entire plan view of Fig. 6(a), and when enlarged by an optical microscope, The configuration as shown in Fig. 6(b) was observed.
於第6圖(b)中,匯流排電極15在使用傳統的Ag及鉛玻璃的玻璃料進行燒製時,Ag係均勻地分散,但在使用本發明之Ag及NTA玻璃的玻璃料進行燒製(即便較長亦為1分鐘以內、1至3秒以上的燒製)時,如該第6圖(b)所示,清楚明白Ag聚集形成在匯流排電極15的中央部分。因此,如在發明之效果一段所說明,於Ag混入NTA玻璃並進行短時間燒製(即便較長亦為1分鐘、1至3秒以上的燒製)時,Ag會聚集在中央部分而使導電性提升(相較於傳統Ag均勻地分散之情況,導電性會提升),且因NTA玻璃本身亦具有導電性等總合性作用,即便減少Ag的比例而增加NTA玻璃,製造作為太陽電池時的轉換效率係如前述,為約16.9%,在實驗中可得到大致相同的結果。 In Fig. 6(b), when the bus bar electrode 15 is fired using a conventional glass frit of Ag and lead glass, the Ag system is uniformly dispersed, but is fired using the glass frit of the Ag and NTA glass of the present invention. In the case of firing (1 to 3 seconds or longer, even if it is longer than 1 minute), as shown in Fig. 6(b), it is clear that Ag is formed in the central portion of the bus bar electrode 15. Therefore, as described in the effect of the invention, when Ag is mixed into the NTA glass and fired for a short period of time (even if it is longer than 1 minute and 1 to 3 seconds or more), Ag gathers in the central portion. The conductivity is improved (the conductivity is improved compared to the case where the conventional Ag is uniformly dispersed), and the NTA glass itself has a general effect of conductivity, and the NTA glass is increased even if the ratio of Ag is decreased, and the solar cell is manufactured. The conversion efficiency at that time was about 16.9% as described above, and substantially the same results were obtained in the experiment.
而且,燒製溫度為500℃至900℃,惟需視實驗而決定在製成作為太陽電池時最適之溫度。過低或過高均無法得到如第6圖(b)的構造,需依實驗而決定。 Further, the firing temperature is from 500 ° C to 900 ° C, but it is necessary to determine the optimum temperature for use as a solar cell depending on the experiment. If the structure is too low or too high, the structure as shown in Fig. 6(b) cannot be obtained, and it is determined by experiment.
於第7圖(c)中,匯流排電極15係圖示的中央部分之橫向寬度較寬的條狀之電極,顯示本發明之NTA 100%的放大照片之1例。 In Fig. 7(c), the bus bar electrode 15 is a strip-shaped electrode having a wide lateral width in the central portion of the figure, and shows an example of a magnified photograph of 100% of the NTA of the present invention.
能清楚明白,此第7圖(c)的匯流排電極15係具有於縱向之寬度較窄的指狀電極14穿出該匯流排電極15而於上側稍微突出的部分,且該突出的部分之周圍較原本的指狀電極14的寬度更粗。然後,在圖示的匯流排電極15之上,以與該匯流排電極15的寬度相同、寬度稍小、或稍大的寬度,以如後述第8圖所詳細說明之方式進行超音波焊接,藉此可以前述的路徑1(光電子濃度區域12、指狀電極14、匯流排電極15、導線17的路徑1)及路徑2(光電子濃度區域12、指狀電極14、導線17的路徑2)之兩種路徑導電連接高濃度電子區域與該導線,減少電子(電流)的損失而有效率地取出至外部,得到與第6圖(a)、(b)大致相同的轉換效率,或稍高的轉換效率(約17.2%)。 It can be clearly understood that the bus bar electrode 15 of FIG. 7(c) has a portion in which the finger electrode 14 having a narrow width in the longitudinal direction passes through the bus bar electrode 15 and slightly protrudes on the upper side, and the protruding portion is The circumference is thicker than the original finger electrode 14. Then, supersonic welding is performed on the bus bar electrode 15 as shown in the figure, which is the same as the width of the bus bar electrode 15, and has a slightly smaller width or a slightly larger width, as described in detail in FIG. 8 which will be described later. Thereby, the path 1 (the photoelectron concentration region 12, the finger electrode 14, the bus bar electrode 15, and the path 1 of the wire 17) and the path 2 (the photoelectron concentration region 12, the finger electrode 14, and the path 2 of the wire 17) can be used. The two paths electrically connect the high-concentration electron region and the wire to reduce the loss of electrons (current) and efficiently take it out to the outside, and obtain substantially the same conversion efficiency as that of FIGS. 6(a) and (b), or slightly higher. Conversion efficiency (about 17.2%).
而且,燒製溫度為與第6圖(a)、(b)大致相同的500℃至900℃,惟需依實驗而決定製成作為太陽電池時最適之溫度。過低或過高均無法得到如第7圖(c)的構造,需依實驗而決定。 Further, the firing temperature is approximately 500 ° C to 900 ° C which is substantially the same as in Figs. 6 (a) and (b), but it is necessary to determine the optimum temperature for use as a solar cell by experiment. If the structure is too low or too high, the structure as shown in Fig. 7(c) cannot be obtained, and it is determined by experiment.
第8圖係表示本發明之說明圖(超音波焊接)。此係前述第7圖(c)的NTA 100%之情況者(而且,同樣可適用於第6圖(a)、(b))。 Fig. 8 is an explanatory view (ultrasonic welding) of the present invention. This is the case where the NTA of the above-mentioned Fig. 7(c) is 100% (and the same applies to Fig. 6 (a), (b)).
第8圖(a)係表示指狀電極14經燒製後的狀態。 Fig. 8(a) shows a state in which the finger electrodes 14 are fired.
第8圖(b)係表示傳統例,其係在第8圖(a)的匯流排電極15之上,焊接以虛線表示之在此圖為稍大(亦可為相同或較小)的導線17。在此傳統例中,係進行一 般的焊接,故指狀電極14所突出的部分(Ag)係與導線17焊接接合,惟指狀電極14之未突出的部分(NTA100%的部分)與導線17並未充分地焊接接合,機械強度並不充分。另一方面,在後述的第8圖(c)之超音波焊接時係焊接接合,機械強度會大幅提升。 Figure 8(b) shows a conventional example, which is on the bus bar electrode 15 of Fig. 8(a), and the wire is indicated by a broken line, which is slightly larger (may be the same or smaller). 17. In this conventional example, a As a general soldering, the portion (Ag) where the finger electrode 14 protrudes is soldered to the wire 17, but the unprojected portion of the finger electrode 14 (100% of the NTA) is not sufficiently soldered to the wire 17, mechanical The strength is not sufficient. On the other hand, in the ultrasonic welding of Fig. 8(c) to be described later, the welding is performed, and the mechanical strength is greatly improved.
第8圖(c)係表示本發明之例,其係在第8圖(a)的匯流排電極15(第7圖(c)的匯流排電極15)之上超音波焊接以虛線表示之稍大的導線17。此本發明之例中,進行超音波焊接,故指狀電極14突出的部分(Ag)與導線17係焊接接合,而且,無指狀電極14的部分(NTA100%的部分)與導線17亦焊接接合,故機械強度大幅提升,同時提升了前述的路徑2(高電子濃度區域12、指狀電極14、匯流排電極15、導線17的路徑2)之導電性。 Fig. 8(c) is a view showing an example of the present invention, which is supersonically welded on the bus bar electrode 15 of Fig. 8(a) (the bus bar electrode 15 of Fig. 7(c)). Large wire 17. In the example of the present invention, ultrasonic welding is performed, so that the portion (Ag) where the finger electrode 14 protrudes is soldered to the wire 17, and the portion of the fingerless electrode 14 (100% of the NTA) is also soldered to the wire 17. When joined, the mechanical strength is greatly improved, and the conductivity of the aforementioned path 2 (the high electron concentration region 12, the finger electrode 14, the bus bar electrode 15, and the path 2 of the wire 17) is improved.
第9圖係表示本發明之測定例(效率)。本第9圖係針對前述的匯流排電極15使NTA由100%變化至70%時之良好的測定例,第9圖的橫軸係表示樣本的編號,縱軸係表示效率(%)。樣本設為: Fig. 9 is a view showing the measurement example (efficiency) of the present invention. This ninth graph is a good measurement example in the case where the NTA is changed from 100% to 70% in the above-described bus bar electrode 15, and the horizontal axis of the ninth graph indicates the number of the sample, and the vertical axis indicates the efficiency (%). The sample is set to:
‧NTA 100% Ag 0% ‧NTA 100% Ag 0%
‧NTA 90% Ag 10% ‧NTA 90% Ag 10%
‧NTA 80% Ag 20% ‧NTA 80% Ag 20%
‧NTA 70% Ag 30%,以該等製成太陽電池,各測定結果(效率)係如圖示所示。此外,由於是初期實驗,故如圖所示,測定結果中呈現相當的離散,但均落在16.9至17.5的範圍內,且即便在以 NTA 100%製成匯流排電極15(亦即,不含Ag而製成)來製造太陽電池時,仍可得到與NTA 70%(或進一步為80%、90%)相比為相同程度或稍高的效率,而能清楚明白亦可使用NTA 100%(發明人等發現此事實)。 ‧NTA 70% Ag 30%, the solar cells were made in these, and the results (efficiency) of each measurement are shown in the figure. In addition, since it is an initial experiment, as shown in the figure, the measurement results show considerable dispersion, but both fall within the range of 16.9 to 17.5, and even in When the NTA 100% is made of the bus bar electrode 15 (that is, it is made without Ag) to produce a solar cell, it can still be obtained to the same extent or slightly compared with NTA 70% (or further 80%, 90%). High efficiency, and it is clear that NTA can also be used 100% (the inventors found this fact).
11‧‧‧矽基板 11‧‧‧矽 substrate
12‧‧‧高電子濃度區域(擴散摻雜) 12‧‧‧High electron concentration region (diffusion doping)
13‧‧‧絕緣膜(氮化矽膜) 13‧‧‧Insulating film (tantalum nitride film)
14‧‧‧電子取出口(指狀電極) 14‧‧‧Electronic take-out (finger electrode)
15‧‧‧匯流排電極 15‧‧‧ bus bar electrode
16‧‧‧背面電極 16‧‧‧Back electrode
17‧‧‧導線 17‧‧‧Wire
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| JP2015180720A JP2017059578A (en) | 2015-09-14 | 2015-09-14 | Solar cell and method for manufacturing solar cell |
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| JP2008251324A (en) * | 2007-03-30 | 2008-10-16 | Hitachi Powdered Metals Co Ltd | Conductive paste |
| WO2012173203A1 (en) * | 2011-06-14 | 2012-12-20 | 京セラ株式会社 | Solar cell and method for manufacturing same |
| TW201407637A (en) * | 2012-04-17 | 2014-02-16 | Heraeus Precious Metals North America Conshohocken Llc | Inorganic reaction system for conductive paste composition |
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| US8093491B2 (en) * | 2005-06-03 | 2012-01-10 | Ferro Corporation | Lead free solar cell contacts |
| TWI391362B (en) * | 2009-03-27 | 2013-04-01 | 日立粉末冶金股份有限公司 | A glass composition and a conductive mortar composition using the same, an electrode wire member, and an electronic component |
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| CN101789456A (en) * | 2010-03-05 | 2010-07-28 | 西安宏星电子浆料科技有限责任公司 | Lead-free aluminum paste for solar battery |
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| WO2012173203A1 (en) * | 2011-06-14 | 2012-12-20 | 京セラ株式会社 | Solar cell and method for manufacturing same |
| TW201407637A (en) * | 2012-04-17 | 2014-02-16 | Heraeus Precious Metals North America Conshohocken Llc | Inorganic reaction system for conductive paste composition |
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