TWI601205B - Plasma processing container and plasma processing device - Google Patents

Description

Plasma processing container and plasma processing device

The present invention relates to a plasma processing apparatus for performing plasma treatment or the like on a workpiece to be processed, and a plasma processing container used in the plasma processing apparatus.

In the manufacturing process of an FPD (flat panel display), various plasma treatments such as plasma etching, plasma ashing, and plasma film formation are performed on the FPD substrate. As a device for performing plasma treatment as described above, for example, a parallel plate type plasma processing device or an inductively coupled plasma (ICP) processing device is known. These plasma processing apparatuses are configured as a vacuum apparatus that performs a process of reducing the pressure inside the processing container to a vacuum state. Moreover, in recent years, in order to process a large-sized FPD substrate, the processing container has also become large.

For example, the inductively coupled plasma processing apparatus includes a processing container that is hermetically held and plasma-treated with a substrate, and a high-frequency antenna that is disposed outside the processing container. The processing container has a body container, a dielectric wall constituting a top plate portion of the processing chamber, and a frame-shaped cover member supporting the dielectric wall. Inductively coupled plasma processing device is processed in a processing container by a high frequency antenna An induced electric field is formed, and the processing gas introduced into the processing container is converted into a plasma by the induced electric field, and the large-sized FPD substrate is subjected to predetermined plasma treatment using the plasma.

In the plasma processing apparatus, the temperature inside the processing container rises due to the plasma generation or the process in the high temperature. Further, for example, in the inductively coupled plasma processing apparatus configured as described above, the main body container constituting the processing container and the lid member supporting the dielectric wall are heated. When the cover member is excessively heated, a bending occurs in the cover member, and a gap is formed in the joint portion with the body container. As a result, there is a possibility that a vacuum leak from the processing chamber and a dielectric wall supported by the cover member are broken. Moreover, as the processing container is enlarged, the problem of bending becomes more serious.

In the temperature control of the constituent members of the plasma processing apparatus, for example, Patent Document 1 proposes a technique in which a heat insulating member is provided on a joint surface between the head main body and the head cover in a nozzle for discharging gas. Patent Document 1 aims to manage the temperature of the gas injection portion of the head by suppressing heat conduction between the head body and the head cover by the heat insulating member.

Further, in the sealing structure of the joint portion of the cover member of the inductively coupled plasma processing apparatus and the main body container, Patent Document 2 proposes a plasma interrupting means for the inside of the joint portion in order to prevent deterioration of the O-ring. A technique of providing an O-ring on the outside.

Further, Patent Document 3 discloses a technique in which an O-ring is provided between a microwave transmitting plate and a fixing pressing member in a microwave antenna processing apparatus of a planar antenna type, and spiral shielding is provided outside.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Laid-Open Patent Publication No. 2002-155364 (Fig. 2, etc.)

[Patent Document 2] Japanese Laid-Open Patent Publication No. 2005-63986 (Fig. 1, etc.)

[Patent Document 3] Japanese Laid-Open Patent Publication No. 2007-294924 (Fig. 3, etc.)

As described above, in the plasma processing apparatus, when deformation due to heat or high temperature in the plasma is generated in a part of the processing container such as the cover member, vacuum leakage or breakage of the component may occur, and thus it is difficult to perform reliability. High plasma process.

An object of the present invention is to suppress a deformation of a processing container due to heat in a plasma processing apparatus including an inductively coupled plasma processing apparatus.

The plasma processing container of the present invention is a plasma processing container which forms a processing chamber for plasma treatment of the object to be processed. The plasma processing container includes a main body container and an upper container coupled to the main body container, and a vacuum sealing member, a heat insulating member, and an electromagnetic wave blocking member capable of functioning as a conductive member are interposed between the main body container and the upper container The body container and the upper container are separated from each other.

The plasma processing container of the present invention is the aforementioned heat insulating member A heat insulating sheet that is divided into a plurality of pieces may be included.

The plasma processing container of the present invention may be disposed in order from the inside to the outside of the processing chamber, in the order of the vacuum sealing member, the electromagnetic wave blocking member, and the heat insulating member, or may be from the processing chamber. The inner side of the inner side is disposed in the order of the vacuum sealing member, the heat insulating member, and the electromagnetic wave blocking member.

In the plasma processing container of the present invention, the heat insulating sheet may be composed of a synthetic resin having a glass transition temperature (Tg) of more than 125 °C. In this case, the thermal conductivity of the heat insulating sheet in the thickness direction may be 1 W/mK or less. Further, the synthetic resin may be derived from a polyetheretherketone (PEEK) resin, a polyphenylene sulfide (PPS) resin, a wholly aromatic [fragrant] polyimide resin, a polyether quinone imine (PEI), and an MC. One or more selected from the group consisting of nylon. Further, in the plasma processing container of the present invention, the thickness of the heat insulating sheet as the synthetic resin may be in the range of 0.5 mm or more and 20 mm or less.

Further, in the plasma processing container of the present invention, the heat insulating sheet may be made of ceramic. In this case, the thermal conductivity of the heat insulating sheet in the thickness direction may be 40 W/mK or less. Moreover, the thickness of the heat insulating sheet as the ceramic may be in the range of 5 mm or more and 20 mm or less.

Further, in the plasma processing container of the present invention, a gap in a range of 0.1 mm or more and 2 mm or less may be provided between the main body container and the upper container by a heat insulating sheet.

Moreover, in the plasma processing container of the present invention, the heat insulating sheet may be disposed in the concave portion, and the concave portion may be provided in the main body container.

Further, in the plasma processing container of the present invention, the interval between the adjacent heat insulating sheets may be in the range of 1 mm or more and 3 mm or less.

Moreover, in the plasma processing container of the present invention, the temperature adjustment device may be provided in each of the main body container and the upper container.

The plasma processing apparatus of the present invention includes the plasma processing container described in any of the above.

The plasma processing apparatus of the present invention may be an inductively coupled plasma processing apparatus, comprising: a mounting table disposed in the plasma processing container and placed on the object to be processed; and an antenna provided in the foregoing Forming an induced electric field in the processing container outside the processing container; a dielectric wall disposed between the antenna and the processing container; and a high frequency power source applying high frequency power to the antenna to form an induced electric field; The processing gas supply means supplies a processing gas to the processing chamber; and an exhausting means for setting the inside of the processing container to a vacuum or a reduced pressure state.

According to the present invention, the body container and the upper container can be surely thermally separated by providing a heat insulating member between the main body container and the upper container to separate the main container from the upper container. Therefore, the temperature control of the body container and the upper container can be separately performed, and the upper part can be prevented Deformation caused by heat of the container.

1‧‧‧Inductively coupled plasma processing device

2A‧‧‧ body container

2B‧‧‧Upper container

4‧‧‧Antenna room

5‧‧‧Processing room

6‧‧‧ dielectric wall

7‧‧‧Caps

8‧‧‧Boom

13‧‧‧Antenna

14‧‧‧matcher

15‧‧‧High frequency power supply

16‧‧‧Support beam

20‧‧‧ gas supply device

21‧‧‧ gas supply pipe

22‧‧‧ pedestal

22A‧‧‧Loading surface

24‧‧‧Insulator frame

25‧‧‧ pillar

26‧‧‧ Bellows

28‧‧‧matcher

29‧‧‧High frequency power supply

30‧‧‧Exhaust device

31‧‧‧Exhaust pipe

51‧‧‧O-ring

52‧‧‧Insulation members

53‧‧‧Spiral shading

54‧‧‧insulation film

61‧‧‧O-ring groove

62‧‧‧Ditch for insulation members

63‧‧‧Shielding trench

Fig. 1 is a cross-sectional view showing the configuration of an inductively coupled plasma processing apparatus according to a first embodiment of the present invention.

Fig. 2 is an enlarged cross-sectional view showing a portion A of Fig. 1.

Fig. 3 is an enlarged plan view showing a main portion of an upper end surface of a side portion of a body container.

Fig. 4 is a cross-sectional view schematically showing the configuration of an inductively coupled plasma processing apparatus according to a second embodiment of the present invention.

Fig. 5 is a cross-sectional view showing the main part of the configuration of the inductively coupled plasma processing apparatus according to the third embodiment of the present invention.

Hereinafter, an inductively coupled plasma processing apparatus according to an embodiment of the present invention will be described with reference to the drawings.

[First Embodiment]

Fig. 1 is a cross-sectional view showing the configuration of an inductively coupled plasma processing apparatus according to a first embodiment of the present invention. Further, in the following, the inductively coupled plasma processing apparatus has been described as an example, but the same can be applied to any of the plasma processing apparatuses.

The inductively coupled plasma processing apparatus 1 shown in FIG. 1 is a pair of examples. For example, the FPD glass substrate (hereinafter simply referred to as "substrate") S is subjected to plasma treatment. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL: Electro Luminescence) display, and a plasma display panel (PDP: Plasma Display Panel).

The inductively coupled plasma processing apparatus 1 is provided with a processing container 2 having a main body container 2A and an upper container 2B.

<body container>

The main body container 2A is a container having a rectangular shape of a bottom portion 2b and four side portions 2c. Further, the main body container 2A may be a cylindrical container. As the material of the main body container 2A, a conductive material such as aluminum or aluminum alloy is used. In the case where aluminum is used as the material of the main body container 2A, an alumite treatment (anodizing treatment) is applied to the inner wall surface of the main body container 2A to avoid generation of contaminants from the inner wall surface of the main body container 2A. Further, the main body container 2A is in a grounded state.

<upper container>

The upper container 2B is provided with a top plate portion 2a, and a dielectric wall 6 disposed at an upper portion of the main body container 2A, partitioning a space in the processing container 2 into two upper and lower spaces; and a cover member 7 and a support beam 16 A support member that supports the dielectric wall 6. The antenna chamber 4 is formed in the upper container 2B, and the processing chamber 5 is formed in the main body container 2A, and the two spaces are partitioned by the dielectric wall 6. That is, the antenna chamber 4 is formed in a space above the dielectric wall 6 in the processing container 2, and the processing chamber 5 is formed in the processing container 2 The space on the lower side of the dielectric wall 6 inside. Therefore, the dielectric wall 6 constitutes the bottom of the antenna chamber 4 and constitutes the top plate portion of the processing chamber 5. The processing chamber 5 is airtightly held and the substrate S is plasma treated here.

The dielectric wall 6 has a substantially rectangular parallelepiped shape having an upper surface and a bottom surface having a substantially square shape or a substantially rectangular shape and four side faces. The thickness of the dielectric wall 6 is, for example, 30 mm. The dielectric wall 6 is formed by a dielectric material. As the material of the dielectric wall 6, a ceramic such as Al ₂ O ₃ or quartz is used. As an example, the dielectric wall 6 is divided into four parts. That is, the dielectric wall 6 has a first partial wall, a second partial wall, a third partial wall, and a fourth partial wall. In addition, the dielectric wall 6 may not be divided, or may be divided into a number other than 4.

The cover member 7 is provided at a lower portion of the upper container 2B. The cover member 7 is disposed to be aligned with the upper end of the body container 2A. The cover member 7 is placed on the main body container 2A to close the processing container 2, and the processing container 2 is opened by being separated from the main body container 2A. Further, the cover member 7 may be integrated with the upper container 2B.

The support beam 16 is formed, for example, in a cross shape, and the four partial walls of the dielectric wall 6 are supported by the cover member 7 and the support beam 16.

The inductively coupled plasma processing apparatus 1 further includes a plurality of cylindrical booms 8 having upper end portions respectively connected to the top plate portion 2a of the upper container 2B. In Fig. 1, although three booms 8 are illustrated, the number of the booms 8 is arbitrary. Support beam 16 It is connected to the lower end of the boom 8. In this manner, the support beam 16 is configured such that the plurality of booms 8 are suspended from the top plate portion 2a of the upper container 2B, and are maintained in a horizontal state at a substantially central position in the upper and lower directions of the inside of the processing container 2.

In the support beam 16, a gas flow path (not shown) for supplying a process gas from the gas supply device 20 and a plurality of openings (not shown) for discharging a process gas supplied to the gas flow path are formed. As a material of the support beam 16, a conductive material is used. As the conductive material, a metal material such as aluminum is preferably used. In the case where aluminum is used as the material of the support beam 16, an alumite treatment (anodizing treatment) is applied to the surfaces inside and outside the support beam 16 to avoid generation of contaminants from the surface.

<Gas supply device>

On the outside of the main body container 2A, a gas supply device 20 is further provided. The gas supply device 20 is connected to a gas flow path (not shown) of the support beam 16 via a gas supply pipe 21 inserted into a hollow portion of the center boom 8 , for example. The gas supply device 20 is for supplying a process gas used for plasma treatment. When the plasma treatment is performed, the processing gas system is supplied into the processing chamber 5 through the gas supply path and the gas flow path and the opening in the support beam 16. As the processing gas, for example, SF _{6 is used} .

<First high frequency supply unit>

The inductively coupled plasma processing apparatus 1 further includes a high frequency antenna (hereinafter simply referred to as "antenna") 13 disposed inside the antenna room 4, that is, It is placed outside the processing chamber 5 and above the dielectric wall 6. The antenna 13 exhibits, for example, a substantially square planar square vortex shape. The antenna 13 is disposed above the dielectric wall 6.

A matching unit 14 and a high frequency power source 15 are provided outside the main body container 2. One end of the antenna 13 is connected to the high frequency power source 15 via the integrator 14. The other end of the antenna 13 is connected to the inner wall of the upper container 2B, and is grounded via the main body container 2A. When the substrate S is subjected to plasma processing, high frequency power (for example, high frequency power of 13.56 MHz) for forming an induced electric field is supplied from the high frequency power source 15 to the antenna 13. Thereby, an induced electric field is formed in the processing chamber 5 by the antenna 13. The induced electric field converts the process gas into a plasma.

<Placement table>

The inductively coupled plasma processing apparatus 1 further includes a susceptor (mounting stage) 22 on which the substrate S is placed, an insulator frame 24, a support post 25, a bellows 26, and a gate valve 27. The pillar 25 is connected to a lifting device (not shown) provided below the main body container 2A, and protrudes into the processing chamber 5 through an opening formed in the bottom portion 2b of the main body container 2A. Further, the pillar 25 has a hollow portion. The insulator frame 24 is provided on the pillars 25. The insulator frame 24 is formed in a box shape in which the upper portion is open. An opening portion continuing to the hollow portion of the pillar 25 is formed at the bottom of the insulator frame 24. The bellows 26 surrounds the pillar 25 and is hermetically connected to the insulator frame 24 and the inner wall of the bottom portion 2b of the body container 2A. Thereby, the airtightness of the processing chamber 5 is maintained.

The susceptor 22 is housed in the insulator frame 24. Base 22 There is a mounting surface 22A on which the substrate S is placed. As the material of the susceptor 22, a conductive material such as aluminum is used. In the case where aluminum is used as the material of the susceptor 22, an alumite treatment (anodizing treatment) is applied to the surface of the susceptor 22 to avoid generation of contaminants from the surface.

<2nd high frequency supply unit>

A matching unit 28 and a high frequency power source 29 are further disposed outside the processing container 2. The susceptor 22 is connected to the matching unit 28 via an energizing rod inserted through the opening of the insulator frame 24 and the hollow portion of the pillar 25, and is further connected to the high-frequency power source 29 via the matching unit 28. When the substrate S is subjected to plasma processing, high-frequency power for bias (for example, high-frequency power of 380 kHz) is applied from the high-frequency power source 29 to the susceptor 22. The high frequency power is used to effectively pull ions in the plasma into the substrate S placed on the susceptor 22.

<gate valve>

The gate valve 27 is provided on the wall of the side portion 2c of the main body container 2A. The gate valve 27 has a switching function to maintain the airtightness of the processing chamber 5 in the closed state, and to transfer the substrate S between the processing chamber 5 and the outside in the open state.

<Exhaust device>

On the outside of the processing container 2, an exhaust device 30 is further provided. The exhaust device 30 is connected to the processing chamber 5 via an exhaust pipe 31 connected to the bottom portion 2b of the main body container 2A. When the substrate S is subjected to plasma treatment, the exhaust device 30 exhausts the air in the processing chamber 5 to make the processing chamber 5 inner dimension Hold the vacuum or decompression environment.

<temperature adjustment device>

A heat medium flow path 40 is provided in a wall constituting the four side portions 2c of the main body container 2A. At one end and the other end of the heat medium flow path 40, an introduction port 40a and a discharge port 40b are provided. Further, the introduction port 40a is connected to the introduction pipe 41, and the discharge port 40b is connected to the discharge pipe 42. The introduction pipe 41 and the discharge pipe 42 are connected to a chiller unit 43 as a temperature adjustment device provided outside the processing container 2.

<Connection Structure of Main Body Container 2A and Upper Container 2B>

Next, the connection structure between the main body container 2A and the upper container 2B of the inductively coupled plasma processing apparatus 1 of the present embodiment will be described with reference to Figs. 2 and 3 . Fig. 2 is an enlarged cross-sectional view showing a portion A of Fig. 1. Fig. 3 is an enlarged plan view showing the main part of the upper end surface of the side portion 2c of the main body container 2A. As shown in FIG. 2 and FIG. 3, the upper end surface of the side portion 2c of the main body container 2A covers the entire circumference, and is provided with an O-ring 51 as a vacuum sealing member and a spiral shielding 53 as a function of the conductive member. An electromagnetic wave breaking member; and a heat insulating member 52. The O-ring 51, the spiral shielding 53, and the heat insulating member 52 are disposed outward from the inside of the processing container 2 (the processing chamber 5 side) in this order. In the present embodiment, the heat insulating member 52 can be prevented from being exposed to high frequency or plasma by providing the spiral shielding 53 at a position closer to the inside of the processing chamber 5 than the heat insulating member 52. Therefore, deterioration of the heat insulating member 52 can be prevented, and the body container 2A and the upper container are ensured for a long period of time. 2B's thermal blocking effect and extended replacement life.

<O-ring>

The O-ring 51 is a vacuum sealing member that maintains airtightness between the main body container 2A and the upper container 2B, and maintains the inside of the processing chamber 5 in a vacuum state. The O-ring 51 is fitted into the O-ring groove 61 formed in the concave portion of the upper end surface of the side portion 2c of the main body container 2A. As the material of the O-ring 51, for example, a nitrile rubber (NBR), a fluororubber (FKM), a silicone rubber (Q), a fluoroketone rubber (FVMQ), a perfluoropolyether rubber (FO), or a press can be used. Rubber (ACM), ethylene propylene rubber (EPM).

<spiral shielding>

The spiral shielding 53 is fitted into the shielding groove 63 formed in the upper end surface of the side portion 2c of the main body container 2A. The spiral shielding 53 is made of a metal such as aluminum, stainless steel, copper, or iron, and can ensure conduction between the main body container 2A and the upper container 2B, and the upper container 2B can be maintained at the ground potential. Further, the spiral shielding 53 prevents leakage of high frequency or plasma from between the main body container 2A and the upper container 2B.

<Insulation member>

The heat insulating member 52 is fitted into the heat insulating member groove 62 formed on the upper end surface of the side portion 2c of the main body container 2A. The heat insulating member 52 is composed of a plurality of long heat insulating sheets 54. That is, the heat insulating sheet 54 has a thin plate shape having a rectangular upper surface and a bottom surface and four side surface portions. Heat insulation sheet 54 The upper surface abuts against the abutting surface of the lower end of the upper container 2B (that is, the lower end of the cover member 7). The heat insulating member 52 can withstand the reaching temperature of the main body container 2A, and can be formed of, for example, a synthetic resin or ceramics as a material having a small thermal conductivity, and more preferably a synthetic resin having a small thermal conductivity.

When a synthetic resin is used as the heat insulating member 52, the glass transition temperature (Tg) is preferably, for example, more than 125 °C. When the glass transition temperature (Tg) of the heat insulating member 52 is 125 ° C or less, there is a case where the heat due to the plasma in the processing chamber 5 is deformed and the heat insulating effect is lost.

The thermal conductivity of the heat insulating member 52 is to suppress the heat conduction between the main body container 2A and the upper container 2B as much as possible. When synthetic resin is used as the material of the heat insulating sheet 54, for example, 1 W/mK or less is preferable, and when ceramic is used, for example. Below 40 W/mK is preferred.

When the large-area substrate S is processed in the inductively coupled plasma processing apparatus 1, the heat insulating member 52 preferably has a compressive strength that receives the pressing force by the upper container 2B when the processing chamber 5 is in a vacuum state.

In view of the above physical properties, as the heat insulating member 52, for example, polyetheretherketone (PEEK) resin, polyphenylene sulfide (PPS) resin, wholly aromatic [fragrance] polytheneamine resin, polyether sulfimine can be used. A synthetic resin such as (PEI) or MC nylon, or a ceramic such as zirconia (ZnO ₂ ) or alumina (Al ₂ O ₃ ).

The heat insulating member 52 is divided into a plurality of rectangular heat insulating sheets 54. In this way, by dividing into a plurality of heat insulating sheets 54, the large-sized processing container 2 for processing, for example, the FPD substrate can be easily equipped. When the distance between the adjacent heat insulating sheets 54 is thermally expanded by, for example, a temperature of 100 ° C or higher, the heat insulating sheets 54 are set to be The interval in which the adjacent heat insulating sheets 54 are substantially in contact with each other is preferable, and for example, it is preferably in the range of 1 mm or more and 3 mm or less, and is preferably about 2 mm.

When the thickness of each of the heat insulating sheets 54 constituting the heat insulating member 52 is made of a synthetic resin as the material of the heat insulating sheet 54, it is preferably in the range of, for example, 0.5 mm or more and 20 mm or less, and in the case of using ceramics, for example, 5 mm or more. It is preferably in the range of 20 mm or less. Further, the thickness of each of the heat insulating sheets 54 is larger than the depth of the heat insulating member grooves 62, and the upper surface of the heat insulating sheets 54 protrudes from the heat insulating member grooves 62.

As shown in an enlarged view in Fig. 2, a gap CL is provided between the main body container 2A and the upper container 2B by the heat insulating member 52. This gap CL ensures sufficient heat insulation between the main body container 2A and the upper container 2B, and is set to absorb the amount of deformation even when the upper container 2B is deformed by heat. Therefore, the gap CL is provided in a range of, for example, 0.1 mm or more and 2 mm or less. When the gap CL is less than 0.1 mm, the heat insulating property between the main body container 2A and the upper container 2B tends to be insufficient, and even if the upper container 2B is deformed by heat, the main container 2A and the upper container 2B cannot be formed. Make sure there is ample gap between them. When the clearance CL exceeds 2 mm, the heat insulating performance is improved, and the vacuum holding function of the O-ring 51 or the high frequency or plasma blocking function due to the spiral shielding 53 is lowered, and it is also more difficult to secure the body container 2A and the upper container. Conduction between 2B.

Each of the heat insulating sheets 54 is fixed to the side portion 2c of the main body container 2A by a plurality of screws 55 in a state in which the heat insulating sheets 54 are fitted into the heat insulating member grooves 62. In addition, the fixing method of the heat insulating sheet 54 is not particularly limited.

Next, a description will be given of a processing operation when the substrate S is subjected to plasma treatment using the inductively coupled plasma processing apparatus configured as described above.

First, in a state where the gate valve 27 is opened, the substrate S is carried into the processing chamber 5 by a transfer mechanism (not shown), placed on the mounting surface 22A of the susceptor 22, and the substrate is placed by an electrostatic chuck or the like. S is fixed to the base 22.

Next, the gas supply device 20 and the gas flow path (not shown) in the support beam 16 and a plurality of openings are discharged from the gas supply device 20 into the processing chamber 5, and by the exhaust device 30. The inside of the processing chamber 5 is maintained in a pressure environment of, for example, about 1.33 Pa, by evacuating the inside of the processing chamber 5 through the exhaust pipe 31.

Next, a high frequency of 13.56 MHz is applied from the high frequency power source 15 to the antenna 13, whereby a uniform induced electric field is generated in the processing chamber 5 via the dielectric wall 6. As a result, the processing gas is plasmad in the processing chamber 5 by the induced electric field, and a high-density inductively coupled plasma is produced. As a result, the ions in the generated plasma are efficiently pulled into the substrate S by the high-frequency power applied from the high-frequency power source 29 to the susceptor 22, and the substrate S is subjected to uniform plasma treatment.

During the plasma treatment, the main body container 2A is heated to a high temperature by the heat of the plasma, and is thermally separated by the heat insulating member 52 between the main body container 2A and the upper container 2B, so that the excessive upper container 2B can be suppressed. Deformation such as bending due to an increase in temperature prevents vacuum leakage or breakage of the dielectric wall 6. Moreover, since the main body container 2A can perform temperature adjustment independently of the upper container 2B by the chiller unit 43, it is in the processing chamber 5 The temperature control of the plasma process performed can be facilitated, and the stability of the process can be improved. Further, in the present embodiment, the temperature adjusting device of the upper container 2B is omitted by thermally separating the main body container 2A from the upper container 2B by the heat insulating member 52.

<Experimental results>

Here, the experimental results confirming the effects of the present invention will be described. While the inductively coupled plasma processing apparatus 1 having the same configuration as that of FIG. 1 was subjected to the plasma etching treatment on the thin film on the surface of the substrate S, the temperatures of the main container 2A and the upper container 2B were measured. As a result, the temperature of the main container 2A is between 96 and 101 ° C, and the temperature of the upper container 2B is between 48 and 50 ° C, and the temperature difference between the main container 2A and the upper container 2B is ensured to be about 50 ° C. From the measured data, it was confirmed that heat conduction from the main body container 2A to the upper container 2B can be effectively interrupted by the heat insulating member 52 interposed between the main body container 2A and the upper container 2B.

As described above, the inductively coupled plasma processing apparatus 1 of the present embodiment can ensure that the main body container 2A and the upper container 2B are not in direct contact with each other by providing the heat insulating member 52 between the main body container 2A and the upper container 2B. The body container 2A is thermally separated from the upper container 2B. Thereby, temperature control of the main body container 2A and the upper container 2B can be performed separately, and simplification of the temperature adjustment apparatus of a cooler etc. can be implement|achieved. Further, it is possible to prevent the occurrence of vacuum leakage due to thermal deformation of the upper container 2B or the breakage of the dielectric wall 6.

[Second Embodiment]

Next, an inductively coupled plasma processing apparatus according to a second embodiment of the present invention will be described with reference to Fig. 4 . Fig. 4 is a cross-sectional view showing the configuration of an inductively coupled plasma processing apparatus according to a second embodiment of the present invention. The inductively coupled plasma processing apparatus 101 according to the second embodiment is an inductively coupled plasma processing apparatus according to the first embodiment, except that the temperature adjustment means is provided not only in the main body container 2A but also in the upper container 2B. 1 is the same. Therefore, in FIG. 4, the same components as those in FIG. 1 will be denoted by the same reference numerals, and description thereof will be omitted.

As shown in Fig. 4, a heat medium flow path 70 is provided in the wall constituting the upper container 2B. At one end and the other end of the heat medium flow path 70, an introduction port 70a and a discharge port 70b are provided. Further, the introduction port 70a is connected to the introduction pipe 71, and the discharge port 70b is connected to the discharge pipe 72. The introduction pipe 71 and the discharge pipe 72 are connected to a chiller unit 73 provided outside the processing container 2. As shown in FIG. 4, the inductively coupled plasma processing apparatus 101 of the present embodiment includes not only the chiller unit 43 provided in the main body container 2A as the first temperature adjustment device but also the second unit. The temperature adjustment device is provided in the chiller unit 73 of the upper container 2B. In the present embodiment, the main body container 2A and the upper container 2B are thermally separated by the heat insulating member 52, so that the separate main body container 2A and the upper container can be separated by the chiller unit 43 and the chiller unit 73. Temperature control is easily performed in 2B. Therefore, the degree of freedom in temperature control of the plasma process performed in the processing chamber 5 is improved, and the stability of the process can be improved.

Other configurations and effects in the present embodiment are the first The form is the same.

[Third embodiment]

Next, an inductively coupled plasma processing apparatus according to a third embodiment of the present invention will be described with reference to Fig. 5 . Fig. 5 is a cross-sectional view showing the configuration of a main part of the inductively coupled plasma processing apparatus according to the third embodiment of the present invention. Fig. 5 is an enlarged view of a portion (A portion) corresponding to Fig. 2 of the inductively coupled plasma processing apparatus 1 of the first embodiment. The inductively coupled plasma processing apparatus of the present embodiment is the same as the inductively coupled plasma processing apparatus 1 of the first embodiment except for the configuration of the A portion. Therefore, in FIG. 5, the same components as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.

As shown in Fig. 5, in the inductively coupled plasma processing apparatus of the present embodiment, the O-ring 51, the heat insulating member 52, and the spiral shielding 53 are provided on the upper end surface of the side portion 2c. The O-ring 51, the heat insulating member 52, and the spiral shielding 53 are disposed outward from the inside of the processing container 2 (the processing chamber 5 side) in this order. The configuration and operation of the O-ring 51, the heat insulating member 52, and the spiral shielding 53 are the same as those in the first embodiment.

Other configurations and effects in the present embodiment are the same as those in the first embodiment.

Hereinabove, the embodiments of the present invention have been described in detail for illustrative purposes, but the present invention is not limited to the embodiments described above. For example, in the above embodiment, the inductively coupled plasma device is exemplified, but as long as it is a plasma processing apparatus including a processing container divided into a plurality of portions, The present invention can also be applied without limitation. For example, it can also be applied to other types of plasma devices such as a parallel plate type plasma device, a surface wave plasma device, an ECR (Electron Cyclotron Resonance) plasma device, and a spiral wave plasma device. Further, the present invention is not limited to the dry etching apparatus, and can be applied to the film forming apparatus or the ashing apparatus in the same manner.

In addition, the present invention is not limited to the case where the substrate for FPD is used as the object to be processed, and may be applied to, for example, a semiconductor wafer or a substrate for a solar cell.

Further, in each of the above embodiments, the heat insulating member 52 is provided in the main body container 2A, but the heat insulating member 52 may be provided on the upper container 2B side.

2c‧‧‧ side

5‧‧‧Processing room

6‧‧‧ dielectric wall

7‧‧‧Caps

51‧‧‧O-ring

52‧‧‧Insulation members

53‧‧‧Spiral shading

61‧‧‧O-ring groove

62‧‧‧Ditch for insulation members

63‧‧‧Shielding trench

CL‧‧‧ gap

Claims (15)

A plasma processing container is a plasma processing container for forming a processing chamber for plasma processing a substrate for a flat panel display, characterized in that: a main body container; and an upper container coupled to the main body container, the main body container and the a vacuum sealing member, a heat insulating member and an electromagnetic wave blocking member are interposed between the upper containers, and the upper container and the upper container are separated from each other, and the heat insulating member covers the entire circumference of the upper end surface of the body container, and is mutually The plurality of heat insulating sheets disposed adjacent to each other at intervals of 1 mm or more and 3 mm or less are formed. The plasma processing container according to the first aspect of the invention, wherein the vacuum sealing member, the electromagnetic wave shielding member, and the heat insulating member are disposed in order from the inside to the outside of the processing chamber. The plasma processing container according to the first aspect of the invention, wherein the vacuum sealing member, the heat insulating member, and the electromagnetic wave blocking member are disposed in order from the inside to the outside of the processing chamber. The plasma processing container according to any one of claims 1 to 3, wherein the heat insulating sheet is made of a synthetic resin having a glass transition temperature (Tg) of more than 125 °C. The plasma processing container according to the fourth aspect of the invention, wherein the heat insulating sheet has a thermal conductivity in a thickness direction of 1 W/mK or less. Such as the plasma processing container of claim 4, wherein The synthetic resin is composed of a polyetheretherketone (PEEK) resin, a polyphenylene sulfide (PPS) resin, a wholly aromatic [fragrant] polyamidosamine resin, a polyetherimide (PEI), and an MC nylon. One or more selected from the group. The plasma processing container according to claim 4, wherein the heat insulating sheet has a thickness of 0.5 mm or more and 20 mm or less. The plasma processing container according to any one of claims 1 to 3, wherein the heat insulating sheet is made of ceramic. The plasma processing container according to the eighth aspect of the invention, wherein the heat insulating sheet has a thermal conductivity in a thickness direction of 40 W/mK or less. The plasma processing container according to claim 8, wherein the heat insulating sheet has a thickness of 5 mm or more and 20 mm or less. The plasma processing container according to any one of claims 1 to 3, wherein a gap of 0.1 mm or more and 2 mm or less is provided between the main body container and the upper container by the heat insulating sheet. . The plasma processing container according to any one of claims 1 to 3, wherein the heat insulating sheet is disposed in the concave portion, and the concave portion is provided in the main body container. The plasma processing container according to any one of claims 1 to 3, wherein the main body container and the upper container are each provided with a temperature adjusting device. A plasma processing apparatus comprising the plasma processing container according to any one of claims 1 to 3. A plasma processing apparatus according to claim 14 is the inductively coupled plasma processing apparatus comprising: a mounting table provided in the plasma processing container, and the flat panel display mounted thereon a substrate; an antenna disposed on an outer side of the processing container to form an induced electric field in the processing container; a dielectric wall disposed between the antenna and the processing container; and a high frequency power supply The antenna applies high-frequency power to form an induced electric field, the processing gas supply means supplies a processing gas into the processing chamber, and the exhaust means sets the inside of the processing container to a vacuum or a reduced pressure state.