TWI699904B - Light-emitting device - Google Patents

Abstract

A light-emitting device comprises: a light-emitting stack comprising a mesa area and a lower area, and the mesa area comprises a first outer periphery; a transparent conductive layer on the mesa area of the light-emitting stack, and wherein, from a top-view of the light-emitting device, the transparent conductive layer comprises a second outer periphery in the first outer periphery, and a distance between the first outer periphery and the second outer periphery is 11~28 μm.

Description

Light-emitting element

The present invention relates to a light-emitting element, especially a light-emitting element having a transparent conductive layer.

With the advancement of semiconductor technology, today's optoelectronic semiconductor components such as laser or light emitting diode (Light Emitting Diode, LED) have been widely used in many fields, such as communications, lighting, display, etc., especially light emitting diodes With the characteristics of high brightness and high color rendering, coupled with the advantages of power saving, small size, low voltage drive and no mercury, light-emitting diodes have been widely used in display and lighting fields instead of traditional lighting technology . Therefore, improving the photoelectric conversion efficiency of optoelectronic semiconductor devices, such as how to balance the luminous efficiency and conductivity of light-emitting diodes, has been one of the focuses of research and development personnel.

The present invention provides a light-emitting element including: a light-emitting stack, including a high mesa region and a recessed region, and the high mesa region has a first outer contour; and a transparent conductive layer is located on the high mesa region of the light-emitting laminate; wherein In a plan view, the transparent conductive layer has a second outer contour located within the first outer contour, and there is a distance between the first outer contour and the second outer contour, and the distance is about 11-28 μm.

100, 200, 300, 400: light-emitting element

1: Light-emitting stack

1a: Long side

1b: short side

11: The first semiconductor layer

12: The second semiconductor layer

13: Active structure

14: Depressed area

15: High Terrace

151: The first outer contour

111: first end

112: second end

2: Transparent conductive layer

21: The second outer contour

22: second inner contour

3: substrate

31: First side

32: second side

4: Electrode group

41: first electrode

411: first electrode pad

412: first extension electrode

42: second electrode

421: second electrode pad

422: second extension electrode

S: side

d, d’: spacing

d1: first spacing

d2: second spacing

d3: third spacing

d4: fourth spacing

C: geometric center

L: length

W1: first width

W2: second width

Fig. 1 is a schematic top view of a light-emitting element according to the first embodiment of the present invention.

Figure 2 is a schematic cross-sectional view of the light-emitting element of Figure 1 along the line A-A'.

Fig. 3 is a schematic top view of a light-emitting element according to the second embodiment of the present invention.

Fig. 4 is a schematic top view of a light-emitting element of the third embodiment of the present invention.

Fig. 5 is a schematic top view of a light-emitting element according to a fourth embodiment of the present invention.

Fig. 6 is a comparison table of luminescence characteristics of light-emitting elements of different embodiments of the present invention.

Fig. 7 is a comparison table of the luminous characteristics of the light-emitting elements of another different embodiment of the present invention.

The following embodiments will accompany the drawings to illustrate the concept of the present invention. In the drawings or descriptions, similar or identical parts use the same reference numerals, and in the drawings, the shape or thickness of the elements can be expanded or reduced. It should be noted that the components not shown in the figure or described in the specification can be in the form known to those who are familiar with the art.

Please refer to FIGS. 1 and 2, which are respectively a schematic top view and a schematic cross-sectional view of the light emitting device 100 according to the first embodiment of the present invention. The light emitting device 100 has a light emitting stack 1 and a transparent conductive layer 2 disposed on the light emitting stack 1. The light emitting stack 1 includes a first semiconductor layer 11, a second semiconductor layer 12 and an active structure 13 disposed on the first Between the semiconductor layer 11 and the second semiconductor layer 12, and the active structure 13 and the second semiconductor layer 12 are sequentially formed on the first semiconductor layer 11, part of the second semiconductor layer 12 and part of the active structure 13 are removed A part of the first semiconductor layer 11 is exposed, so that the light-emitting stack 1 forms a recessed region 14 and a plateau region 15 protruding from the recessed region 14. From a cross-sectional view, the recessed region 14 includes a part of the first semiconductor layer 11, and the plateau region 15 includes another part of the first semiconductor layer 11, the active structure 13, and the second semiconductor layer 12 stacked in this order. On the semiconductor layer 11. From the top view, the plateau region 15 has a first outer contour 151, the first outer contour 151 is the boundary of the second semiconductor layer 12, and the exposed part of the first semiconductor layer 11 is located in the circle surrounded by the first outer contour 151 Out of scope. In detail, from the cross-sectional view of the light-emitting device 100, the plateau region 15 has a side edge S connected to the exposed surface of the first semiconductor layer 11 in the recessed region 14, and the position of the side edge S is equivalent to the first outer contour 151. The first semiconductor layer 11 and the second semiconductor layer 12 respectively have a different first conductivity and a second conductivity to provide electrons and holes respectively, or provide holes and electrons respectively; the active structure 13 may include a single heterogeneous material Structure (single heterostructure), double heterostructure (double heterostructure) or multilayer quantum wells (multiple quantum wells). The materials of the first semiconductor layer 11, the second semiconductor layer 12, and the active structure 13 are three-five group compound semiconductors, such as GaAs, InGaAs, AlGaAs, AlInGaAs, GaP, InGaP, AlInP, AlGaInP, GaN, InGaN, AlGaN, AlInGaN, AlAsSb, InGaAsP, InGaAsN, AlGaAsP, etc. In the embodiments of the present invention, unless otherwise specified, the above-mentioned chemical expressions include "compounds conforming to the chemical dosage" and "compounds not conforming to the chemical dosage", where the "compounds conforming to the chemical dosage" are, for example, the total of three elements The element dose is the same as the total element dose of Group V elements. On the contrary, the "non-chemical dose compound" means that the total element dose of Group III elements is different from the total element dose of Group V elements. For example, the chemical formula is AlGaAs, which means that it contains three-group elements aluminum (Al) and/or gallium (Ga), and contains five-group elements arsenic (As), where the total of the three-group elements (aluminum and/or gallium) The element dose can be the same as or different from the total element dose of the group five element (arsenic). In addition, if each compound represented by the above chemical formula is a compound that meets the chemical dose, AlGaAs represents Al _x Ga _(1-x) As, where 0≦x≦1; AlInP represents Al _x In _{(1-x )} P, where 0≦x≦1; AlGaInP stands for (Al _y Ga _(1-y) ) _1-x In _x P, where 0≦x≦1, 0≦y≦1; AlGaN stands for Al _x Ga _{( 1-x)} N, where 0≦x≦1; AlAsSb stands for AlAs _x Sb _(1-x) , where 0≦x≦1; InGaP stands for In _x Ga _1-x P, where 0≦x≦1 ; InGaAsP stands for In _x Ga _1-x As _1-y P _y , where 0≦x≦1,0≦y≦1; InGaAsN stands for In _x Ga _1-x As _1-y N _y , where 0≦x ≦1, 0≦y≦1; AlGaAsP stands for Al _x Ga _1-x As _1-y P _y , where 0≦x≦1, 0≦y≦1; InGaAs stands for In _x Ga _1-x As, where, 0≦x≦1.

In the first embodiment, from a top view, the light-emitting stack 1 has a long side 1a and a short side 1b connected to the long side 1a, and the ratio of the length of the short side 1b to the length of the long side 1a is preferably about 0.15~0.45, so that the light-emitting stack 1 has a long and narrow top-view appearance, and the upper surface area of the light-emitting stack 1 of the light-emitting element 100 can be further less than 0.5mm ² , or less than 0.35mm ² , for example, the light-emitting stack 1 has 0.26mm ^2. The upper surface area. Since the light-emitting element 100 of the first embodiment has a small area and a long and narrow light-emitting laminate 1, it is particularly suitable for certain fields. For example, it can be installed in a light-emitting module of a backlight unit as a mobile phone, a tablet computer, or a notebook computer. The backlight unit of other 3C products, and when the long and narrow light-emitting laminate 1 is matched with the transparent conductive layer 2 of the embodiment of the present invention, the current can be more evenly distributed in the light-emitting laminate 1, thereby increasing the luminous efficiency of the light-emitting element 100. However, the present invention is not limited to this. The light-emitting stack 1 of the light-emitting element 100 of the first embodiment has two symmetrical long sides 1a and two symmetrical short sides 1b, and both ends of each long side 1a are connected to the short side 1b. In addition, from the top view, the high mesa region 15 of the light-emitting element 100 of the first embodiment has a length L in the direction along the long side 1a, and has a first width W1 and a first width W1 in the direction along the short side 1b. The second width W2 is smaller than the first width W1. Preferably, the ratio of the first width W1 to the length L of the light emitting element 100 in one embodiment is about 0.14 to 0.4, and the ratio of the second width W2 to the length L is about 0.12 to 0.35, which can further improve the light emitting element 100 luminous efficiency. It should be noted that the above-mentioned "direction along the long side 1a" is the same direction as the y-axis in Figure 1, and the "direction along the short side 1b" is the same direction as the x-axis in Figure 1.

Please continue to refer to Figures 1 and 2, the light emitting device 100 can optionally include a substrate 3, and the light emitting stack 1 is located on the substrate 3. In the first embodiment, the first semiconductor layer 11, the active structure 13 and the second semiconductor The layers 12 are sequentially stacked on the substrate 3, and the substrate 3 can be used to support the light-emitting stack 1, thereby increasing the overall mechanical strength of the light-emitting element 100, but the function of the substrate 3 is not limited to this. In the first embodiment, the substrate 3 has a first side 31 and a second side 32 smaller than the first side 31. The first side 31 corresponds to the long side 1a of the light-emitting stack 1, and the second side 32 is The short side 1b corresponds to the short side 1b. From the top view, the shape of the substrate 3 is roughly the same as that of the light-emitting stack 1, and the contour of the substrate 3 roughly coincides with the outer contour of the light-emitting stack 1. However, in another embodiment, the substrate 3 The contour can also be located outside the outer contour of the light-emitting laminate 1, and the invention is not limited thereto. The substrate 3 in the first embodiment can be a transparent substrate, a conductive substrate or an insulating substrate, and it is not limited herein. The light-emitting stack 1 in the first embodiment can be grown on the substrate 3 by an epitaxial method such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hydride vapor phase epitaxy (HVPE). Or on another growth substrate, if the light emitting stack 1 is formed on the growth substrate, the light emitting stack 1 can be bonded to the substrate 3 by substrate transfer technology and the growth substrate can be selectively removed or retained. In the first embodiment, the light-emitting layer 1 of the light-emitting element 100 is directly grown on the substrate 3, and a buffer layer (not shown) can be optionally provided between the light-emitting layer 1 and the substrate 3. The buffer layer may include multiple Crystal, single crystal material, for example, the material of the buffer layer may include gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), etc.; or, in another embodiment, the light-emitting stack 1 transmits The substrate transfer technology is bonded to the substrate 3. The buffer layer can be used as an adhesive layer to fix the light emitting stack 1 on the transparent substrate 3. In this case, the material of the buffer layer can include transparent polymer materials, oxides, nitrides or Fluoride etc. In addition, the material of the substrate 3 in the first embodiment can be, but is not limited to, transparent insulating materials such as Sapphire, Diamond, Glass, Quartz, Acrylic, Ring Epoxy resin (Epoxy), aluminum nitride (AlN), or transparent conductive oxide (TCO) such as zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), gallium oxide (Ga ₂ O) ₃ ), lithium gallium oxide (LiGaO ₂ ), lithium aluminum oxide (LiAlO ₂ ) or magnesium aluminum oxide (MgAl ₂ O ₄ ), etc., or can be semiconductor materials such as silicon carbide (SiC), gallium arsenide (GaAs), phosphorus Gallium (GaP), gallium arsenide phosphorus (GaAsP), zinc selenide (ZnSe), zinc selenide (ZnSe) or indium phosphide (InP), etc., or can be metal materials such as aluminum (Al), copper (Cu ), molybdenum (Mo) or tungsten (W) or a combination of the above elements.

As shown in Figures 1 and 2, the transparent conductive layer 2 in the first embodiment is provided on the light-emitting laminate 1. The transparent conductive layer 2 has a second outer contour 21 formed on the first outer surface of the light-emitting laminate 1. Within the contour 151, in other words, from the top view, the second outer contour 21 is closer to the geometric center C of the light-emitting element 100 than the first outer contour 151, so that the second outer contour 21 is located within the range surrounded by the first outer contour 151 And the area enclosed by the second outer contour 21 is smaller than the area enclosed by the first outer contour 151, that is, an upper surface area of the transparent conductive layer 2 is smaller than an upper surface area of the plateau region 15. In one embodiment, there is a distance d between the first outer contour 151 and the second outer contour 21 of about 11 μm-28 μm, or the distance d is 13 μm to 26 μm, or the distance d is 17 μm to 25 μm; in another embodiment , The ratio of the distance d to the short side 1b is about 0.04~0.15; in another embodiment, the upper surface area of the transparent conductive layer 2 does not exceed about 85% of the upper surface area of the plateau region 15. Among them, the transparent conductive layer 2 The upper surface area is not less than about 62% of the upper surface area of the plateau region 12, so that the current can be more evenly distributed in the light-emitting stack 1 by the arrangement of the transparent conductive layer 2. Preferably, the upper surface area of the transparent conductive layer 2 of another embodiment of the present invention is about 65% to 82% of the upper surface area of the plateau region 18, so that the transparent conductive layer 2 can have a good current conduction effect, and it can also avoid Unnecessary shading is produced. In the light-emitting element 100 in the first embodiment, when viewed from a top view, the minimum distance between the first outer contour 151 and the second outer contour 21 is the same everywhere in the light-emitting element 100, that is, the distance d is a constant value. For example, the distance between the first outer contour 151 and the second outer contour 21 close to the long side 1a is substantially equal to the distance between the first outer contour 151 and the second outer contour 21 close to the short side 1b. In the first embodiment, the shape of the second outer contour 21 of the transparent conductive layer 2 is similar to the shape of the first outer contour 151 of the light-emitting laminate 1, so that the first outer contour 151 is conformably formed with the second outer contour 151. In another embodiment, the shape of the second outer contour 21 and the first outer contour 151 may be different, so that the first outer contour 151 is non-conformally formed outside the second outer contour 21, the present invention The shape of the second outer contour 21 is not limited to this. In the first embodiment, the transparent conductive layer 2 of the light-emitting element 100 further has a second inner contour 22 located within the second outer contour 21. The second inner contour 22 can be any shape when viewed from the top. For example, it is circular or elliptical, and is set relative to an electrode pad (the related structure of the electrode pad is detailed below), so that at least part of the area under the electrode pad does not have the transparent conductive layer 2 and can prevent the current from directly passing through the electrode pad The transparent conductive layer 2 is injected into the light-emitting stack 1 and allows current to diffuse to the area of the light-emitting stack 1 away from the electrode pads, thereby increasing the current spreading ability of the transparent conductive layer 2. The coverage of the transparent conductive layer of the general light-emitting element above the light-emitting stack is high, for example, the coverage is greater than 94%, and the outline of the transparent conductive layer and the outline of the plateau area are small, for example, the outline is not greater than 8μm, even if the transparent conductive layer 2 With high light transmittance, when most of the light-emitting laminate is shielded by the transparent conductive layer, it will still cause poor luminous efficiency. The light-emitting element 100 disclosed in the first embodiment reduces the shading effect of the transparent conductive layer 2 while maintaining the current spreading ability, so that the light-emitting efficiency of the light-emitting element 100 is significantly improved. The "coverage" mentioned above refers to the percentage of the upper surface area of the transparent conductive layer of the general light-emitting device to the upper surface area of the plateau region; in addition, the upper surface area of the plateau region 15 and the transparent conductive layer 2 can be used to obtain the light-emitting device 100 The image is enlarged (for example, the image of the light-emitting element 100 is enlarged by an optical microscope or an electron microscope), and then image processing is performed to obtain the area enclosed by the first outer contour 151 and the area enclosed by the second outer contour 21 respectively , The image processing method can be calculated through computer software integration or manual integration, and there are no restrictions here. Wherein, when the transparent conductive layer 2 has the second inner contour 22, the upper surface area of the transparent conductive layer 2 is the upper surface area of the area between the second outer contour 21 and the second inner contour 22.

The transparent conductive layer 2 of the first embodiment of the present invention can be selectively formed on the second semiconductor layer 12 by sputtering, but it is not limited thereto. In one embodiment, the transparent conductive layer 2 has a transmittance of 85% or more to the radiated light of the active structure 13 and a resistivity of 8×10 ⁻⁴ (Ω-cm) or less. In another embodiment, the transparent conductive layer 2 includes a material such as indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium zinc oxide (GZO), zinc oxide (ZnO), gallium phosphide (GaP), indium zinc oxide (IZO), diamond-like carbon film (DLC), indium gallium oxide ( IGO), gallium aluminum zinc oxide (GAZO) or graphene (Graphene), etc., or a combination of any two or more of the above materials, the present invention is not limited thereto.

Please refer to Figure 6, which is a comparison table of the light-emitting characteristics of the light-emitting elements of different embodiments of the present invention (groups A1 to A4) and the light-emitting elements of the control group. The long side 1a of the light-emitting laminate 1 of each example is 1143μm. In addition, the short side 1b is 225 μm, and the ratio of the short side length to the long side length is 0.197. From the top view, the light-emitting elements of the embodiments in this table are elongated. The distance between the first outer contour and the second outer contour of the control group is 8μm, and the distance d of the A1~A4 group is 13μm, 18μm, 23μm and 28μm, respectively. The table shows the brightness performance of the A1~A4 group Both are better than the control group. Among them, the brightness enhancement effect of the A3 group is the most significant. It can be seen that, in the light-emitting elements of different embodiments of the present invention, when the distance d is 11 μm to 28 μm, and the surface area of the transparent conductive layer 2 accounts for 62% to 85% of the surface area of the plateau region 15, the relative distance is 8 μm, transparent The light-emitting element whose surface area on the conductive layer accounts for more than 85% of the surface area on the high mesa region has better luminous efficiency.

Please refer to Fig. 7 again, which is a table of the luminous characteristics of the light-emitting element of another different embodiment of the present invention when the pitch is used as a variable. The light-emitting laminate shown in Fig. 7 has a long side of 1016 μm and a short side of 560 μm, where The ratio of the length of the short side to the length of the long side is 0.55. From the top view, the light-emitting element of each embodiment in this table is different from the elongated shape of the embodiment in FIG. 6, and the light-emitting element of the embodiment of this table is roughly square. This table shows the luminescence characteristics when the distance d between the control group and the group B is 8 μm and 13 μm, respectively. At this time, the surface area of the transparent conductive layer 2 of the control group and the group B accounts for 90.08% of the surface area of the plateau 15 respectively. 84.35%. In the data presented in Figure 7, the brightness performance of group B is inferior to that of the control group. It can be seen from Fig. 7 that when the distance d is increased, which means that the ratio of the upper surface area of the transparent conductive layer 2 to the upper surface area of the plateau 15 is reduced to less than 85%, the increase in the brightness of the square light-emitting element is not significant. Therefore, in the light-emitting element of the present invention, preferably, when the ratio of the short side to the long side is about 0.15 to 0.45, if the area of the transparent conductive layer 2 is adjusted to 62% to 85% of the area of the plateau region 15, it has Improve the luminous efficiency of light-emitting elements.

Figures 3 and 4 are schematic top views of the light-emitting elements 200 and 300 of the second and third embodiments of the present invention, respectively. In the light-emitting elements 200 and 300 of the second and third embodiments, the components and the relationship between the components are The light-emitting element 100 of the first embodiment is similar, but the difference is that the distance d between the first outer contour 151 of the light-emitting laminate 1 and the second outer contour 21 of the transparent conductive layer 2 is not a fixed value, and includes at least Two different values, that is, the minimum distance between the first outer contour 151 and the second outer contour 21 of the light-emitting element 200, 300 is not the same at each of the light-emitting elements 200, 300. For example, in the second embodiment, the distance d includes a first pitch d1 and a second pitch d2 different from the first pitch d1. In detail, as shown in Figure 3, the light-emitting element 100 of this embodiment is in the direction along the long side 1a (that is, the y-axis direction on the figure), on one side of the first outer contour 151 and the second outer contour There is a first distance d1 between the contours 21, and in the direction along the short side 1b (that is, the x-axis direction on the drawing), there is a first outer contour 151 and the second outer contour 21 on the other side. Two pitches d2. The first pitch d1 is different from the second pitch d2. For example, the first pitch d1 in this embodiment is greater than the second pitch d2, or for example, in another embodiment, the second pitch d2 may also be larger than the first pitch d1 The present invention is not limited to this. For another example, when viewed from a top view, the light-emitting laminate 1 of this embodiment or the following embodiments has two long sides 1a and two short sides 1b, and in one embodiment, it is close to one of the long sides 1a. On the side of the first outer contour 151 and the second outer contour 21 there is a distance d, and on the side close to the other long side 1a and on the side close to any short side 1b, the first The outer contour 151 and the second outer contour 21 have the same other distance d', and the distance d'is different from the distance d; in another embodiment, on the side close to any long side 1a, the first The outer contour 151 and the second outer contour 21 have the same distance d, and on the side close to any short side 1b, the first outer contour 151 and the second outer contour 21 have the same another distance d', and the distance d'is different from the distance d; in another embodiment, on the side close to one of its long sides 1a and on the side close to one of its short sides 1b, the first outer contour 151 and the second outer contour 21 have the same distance d, and on the side close to the other long side 1a and on the side close to the other short side 1b, the first outer contour 151 and the second outer contour 21 have the same Another distance d', and the distance d'is different from between Distance d; in another embodiment, on the side close to any long side 1a and on the side close to any short side 1b, the first outer contour 151 and the second outer contour 21 have different distances d respectively In another embodiment, on the side close to one short side 1b, there is a distance d between the first outer contour 151 and the second outer contour 21, and on the side close to the other short side 1b and On the side close to any long side 1a, the first outer contour 151 and the second outer contour 21 have the same another distance d′, and the distance d′ is different from the distance d.

FIG. 4 is a schematic top view of a light emitting device 300 according to the third embodiment of the invention. The light-emitting element 300 in the embodiment of the present invention further includes an electrode group 4 having a first electrode 41 and a second electrode 42 electrically connected to the second semiconductor layer 12 and the first semiconductor layer 11, respectively, and the first electrode 41 has A first electrode pad 411 and a second electrode 42 have a second electrode pad 421. The first electrode pad 411 and the second electrode pad 421 are arranged on the same surface of the light-emitting stack 1 to form a horizontal light-emitting structure. However, In other embodiments, the first electrode pad 411 and the second electrode pad 421 may also be formed on opposite sides of the light-emitting stack 1 to form a vertical light-emitting structure. In detail, in the third embodiment, the first electrode 41 is provided in the plateau region 15 and is electrically connected to the second semiconductor layer 12, and the second electrode 42 is provided in the recess region 14 and is electrically connected to the exposed first semiconductor layer 11. The light-emitting stack 1 has a first end 111 and a second end 112 opposite to each other. The first end 111 and the second end 112 are located close to the two short sides 1b of the light-emitting stack 1, and the first electrode pad 411 The and second electrode pads 421 are respectively disposed on the first end 111 and the second end 112. There is a third distance d3 between the first outer contour 151 near the first electrode pad 411 and the second outer contour 21, and a fourth distance d3 is provided between the first outer contour 151 and the second outer contour 21 near the second electrode pad 421. The distance d4, the third distance d3 is different from the fourth distance d4. In detail, as shown in FIG. 4, the first outer contour 151 has a point A1, and the distance from the point A1 to the first electrode pad 411 is compared to any point of the first outer contour 151 to the first electrode pad 411. The distance is short, and the second outer contour 21 has a point B1. Similarly, the distance from the point B1 to the first electrode pad 411 is shorter than the distance from any point of the other second outer contour 21 to the first electrode pad 411, and The distance between point A1 and point B1 is the third above Distance d3; the first outer contour 151 has a point A2, the distance from point A2 to the second electrode pad 421 is shorter than any point of the other first outer contour 151 to the second electrode pad 421, and the second outer contour 21 has a point B2. The distance from point B2 to the second electrode pad 421 is shorter than the distance from any point of the second outer contour 21 to the second electrode pad 421, and the distance between point A2 and point B2 is The fourth distance d4 mentioned above. In this embodiment, the third distance d3 is greater than the fourth distance d4, which further reduces the area of the transparent conductive layer 2 near the first end 111 while maintaining a good current spreading ability, by partially removing the shielding The luminous transparent conductive layer 2 achieves the effect of increasing luminous efficiency. In more detail, in this embodiment, the third distance d3 is about 11-28 μm, and the fourth distance d4 is about 3-15 μm, but the present invention is not limited to this. In another embodiment, the third The distance d3 is about 12-35 μm, and the fourth distance d4 is about 11-28 μm, which can achieve similar effects. In addition, when viewing the light emitting element 300 of this embodiment from a top view, the contour of the first electrode pad 411 or the second electrode pad 421 is partially aligned with the first outer contour 151. In this embodiment, by matching the shape of the first outer contour 151 and the arrangement position of the electrode group 4, good current spreading ability and luminous efficiency can be obtained.

Please refer to FIG. 5 for a schematic top view of the light emitting device 400 of the fourth embodiment. The components of the light-emitting element 400 of this embodiment and the relationship between the components are similar to those of the light-emitting element 100 of the first embodiment, except that the electrode group 4 has a different form. The first electrode 41 of the electrode group 4 further includes a first extension electrode 412 connected to the first electrode pad 411, the second electrode 42 further includes a second extension electrode 422 connected to the second electrode pad 421, and the first extension electrode 412 The second extension electrode 422 is located in the high mesa area 15 and the second extension electrode 422 is located in the recessed area 14. Through the first extension electrode 412 and the second extension electrode 422, the external current can be more uniformly diffused into the light-emitting stack 1. In the first to third embodiments, the first extension electrode 412 and the second extension electrode 422 are approximately parallel. However, the light emitting element 400 of the fourth embodiment has first extension electrodes that are not parallel to each other or have one end close to each other and one end far away. 412 and the second extension electrode 422.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Considering the inevitable process error, the above-mentioned distance d between the first outer contour 151 and the second outer contour 21 may have an error range (eg 1~2μm), therefore, when the “spacing d is about 11μm~28μm” is stated, those skilled in the art should understand that the spacing d of 9μm~30μm is also covered by the present invention. The individual embodiments or the combination of some or all of the technical features disclosed between the embodiments belong to the content disclosed in the present invention, and any person with ordinary knowledge in the technical field does not depart from the spirit and scope of the present invention However, some changes and modifications can be made, so the protection scope of the present invention shall be subject to the scope of the attached patent application.

100‧‧‧Light-emitting element

1‧‧‧Light-emitting stack

1a‧‧‧long side

Short side

11‧‧‧First semiconductor layer

12‧‧‧Second semiconductor layer

14‧‧‧Depressed area

15‧‧‧High Terrace

151‧‧‧First outer contour

2‧‧‧Transparent conductive layer

21‧‧‧Second outer contour

22‧‧‧Second inner contour

31‧‧‧First side

32‧‧‧Second side

4‧‧‧Electrode group

41‧‧‧First electrode

411‧‧‧First electrode pad

412‧‧‧First extension electrode

42‧‧‧Second electrode

421‧‧‧Second electrode pad

422‧‧‧Second extension electrode

d‧‧‧Pitch

C‧‧‧Geometric Center

L‧‧‧length

W1‧‧‧First width

W2‧‧‧Second width

Claims (10)

A light-emitting element includes: a light-emitting stack, including a plateau region and a recessed region, and the plateau region has a first outer contour; and a transparent conductive layer is located on the plateau region of the light-emitting stack; It can be seen that the transparent conductive layer has a second outer contour located within the first outer contour, and there is a distance between the first outer contour and the second outer contour, and the distance is about 11 μm-28 μm. A light-emitting element according to claim 1, wherein the upper surface area of the transparent conductive layer does not exceed 85% of the upper surface area of the plateau region. A light-emitting element according to claim 1, wherein the light-emitting laminate has a long side and a short side, and the ratio of the short side to the long side is 0.15 to 0.45. A light-emitting element according to claim 1, wherein the light-emitting laminate has a long side and a short side, and the ratio of the pitch to the short side is 0.04 to 0.15. A light emitting element according to claim 1, wherein the pitch is a certain value. A light-emitting element according to claim 1, further comprising a first extension electrode located on the plateau area of the light-emitting stack, and a second extension electrode located on the recessed area of the light-emitting stack, and the recessed area It is arranged along one edge of the light-emitting unit. A light-emitting element according to claim 6, wherein, in a plan view, the second extension electrode is not parallel to the first extension electrode. A light-emitting element according to claim 1, wherein, from a top view, the upper surface area of the transparent conductive layer is not less than 62% of the upper surface area of the plateau region. A light-emitting element according to claim 1, wherein: the pitch includes a first pitch and a second pitch; and the light-emitting stack has a long side and a short side, and when viewed from the top, the first A spacing is located in the long side direction, the second spacing is located in the short side direction, and the first spacing is different from the second spacing. A light-emitting element according to claim 1, wherein: the pitch includes a third pitch and a fourth pitch; the light-emitting element further includes a first electrode pad and a second electrode pad respectively disposed on the light-emitting stack The opposite ends of the layer; the third distance is located between the first outer contour and the second outer contour close to the first electrode pad; the fourth distance is located between the first outer contour and the second outer contour close to the second electrode pad Between the second outer contours; and the third distance is different from the fourth distance.

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