TWI697968B - Manufacturing method of semiconductor device - Google Patents

Abstract

The present invention is a method of manufacturing a semiconductor device, which is characterized by a process of forming a resin layer (13) on a bump forming surface with bump members (2) on which plural bumps (22) are formed, And an engineer who applies plasma treatment to the resin layer (13) to remove the resin layer (13) covering the surface of the bumps (22).

Description

Manufacturing method of semiconductor device

The present invention relates to a method of manufacturing a semiconductor device.

In recent years, with the miniaturization or thinning of electronic equipment, the demand for thinning or miniaturization of semiconductor packages has also increased. Therefore, as a mounting method of semiconductor components, instead of the conventional wire bonding method that uses metal wires to connect, it is proposed to form protruding electrodes called bumps on the electrodes of the chip, and the bumps are used to directly connect the substrates. The mounting method of flip chip connection between electrode and chip electrode.

In the mounting method of such a flip chip connection method, a resin layer is provided on a bump ground covering a bump-attached wafer or bump-attached chip for various purposes. Examples of such a resin layer include an adhesive layer for bonding bumped wafers and substrates, an underfill layer for reinforcing the connection between bumped wafers and substrates, and for protecting bumped wafers. Or a protective layer with bumped chips, etc.

However, when the resin layer covers the bumps, the resin layer on the bumps must be removed mechanically to ensure electrical connection between the bumps and the electrodes of the substrate. Therefore, at the point of reliability of the connection between the bumped wafer and the substrate The problem. In addition, in the case of connecting bumped wafers and substrates through reflow processing, the molten solder from the bumps is covered by the resin layer, and the automatic alignment effect cannot be obtained (the electrodes of the wafer and the substrate are mutually The position adjustment accuracy is poor, and even if there is a deviation, it will automatically be corrected to the normal position during reflow).

In order to solve the above-mentioned problems, proposals have been made. For example, in the process of grinding the back surface of the bump-attached wafer, the use of a thermosetting resin layer in contact with the circuit surface and laminating it on top of this layer, In order to embed the bumps, a flexible thermoplastic resin layer and a method of laminating an outermost layer laminated sheet on this layer (document 1: refer to Japanese Patent Application Publication No. 2005-28734).

In the case of using the laminated sheet described in Document 1, after penetrating the thermosetting resin layer through the bumps, the layers other than the thermosetting resin layer are peeled off. Therefore, it is necessary to make the bump shape of the bump-attached wafer a needle shape or the like. In addition, when the cross-sectional shape of the bump is semicircular or mesa, the resin layer is likely to remain on the bump, and there is a problem in connection reliability.

The object of the present invention is to provide a method for manufacturing a semiconductor device that can efficiently manufacture a semiconductor device with superior connectivity.

A method of manufacturing a semiconductor device according to one aspect of the present invention is characterized by the step of forming a resin layer on a bump forming surface with bump members on which plural bumps are formed, and Impose Plasma treatment is a method of removing the resin layer covering the bump surface.

According to this structure, it is possible to provide a resin layer for various purposes on the bump forming surface with the bump member. The resin layer includes, for example, an adhesive layer for bonding bumped wafers and substrates, an underfill layer for reinforcing the connection between bumped wafers and substrates, and for protecting bumped wafers or Protective layer with bump chip etc.

In addition, by applying plasma treatment to the resin layer, the resin layer covering the surface of the bump can be removed. In addition, this plasma treatment can uniformly treat the entire surface of the resin layer on the bump forming surface. Therefore, the resin layer covering the surface of the bump can be removed relatively mechanically, and can be removed simply and efficiently. In addition, by electrically connecting and removing the resin layer covering the bump surface, and by adding the bumps on the surface and the electrodes on the substrate, a semiconductor device with excellent connection reliability can be manufactured efficiently.

In the method of manufacturing a semiconductor device according to one aspect of the present invention, it is preferable to provide electrical connections to remove the resin layer, and to expose the bumps on the surface and the electrodes of the substrate.

According to this structure, the resin layer covering the bump surface is removed by electrical connection, and the bump and the electrode of the substrate are exposed, and a semiconductor device with excellent connection reliability can be obtained.

In the method for manufacturing a semiconductor device according to one aspect of the present invention, the processing gas used in the plasma treatment is selected from the group consisting of oxygen, argon, trifluoromethane, tetrafluoromethane, and sulfur hexafluoride At least one kind is preferred.

In this way, oxygen is used as the processing gas in plasma processing, In the case of argon, trifluoromethane, tetrafluoromethane, and sulfur hexafluoride, the resin layer covering the surface of the bump can be removed efficiently.

In the method of manufacturing a semiconductor device according to one aspect of the present invention, the flow rate of the processing gas in the plasma treatment is preferably 1 cm ³ /min or more and 1000 cm ³ /min or less.

With this configuration, if the flow rate of the processing gas in the plasma treatment is within the aforementioned range, the resin layer covering the surface of the bump can be removed efficiently.

In the method of manufacturing a semiconductor device according to one aspect of the present invention, the processing pressure of the plasma processing is 1 Pa or more and 3000 Pa or less.

With this configuration, if the processing pressure of the plasma processing is within the aforementioned range, the resin layer covering the bump surface can be removed efficiently.

1‧‧‧Next slice

2‧‧‧Bumped wafer

2a‧‧‧with bumped chip

3‧‧‧Cutting tape

4‧‧‧Substrate

11‧‧‧Support body layer

12‧‧‧Adhesive layer

13‧‧‧Resin layer

21‧‧‧Semiconductor Wafer

22‧‧‧ bump

100‧‧‧Semiconductor device

Fig. 1 is a schematic cross-sectional view of a laminated film for forming a resin layer according to the first embodiment of the present invention.

2 is a schematic cross-sectional view showing a bump-attached member (a bump-attached wafer) related to the first embodiment of the present invention.

3A is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention.

3B is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention.

3C is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention.

Figure 3D is for explaining the semiconductor of the first embodiment of the present invention An explanatory diagram of the manufacturing method of the body device.

3E is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention.

3F is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention.

4A is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the second embodiment of the present invention.

4B is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the second embodiment of the present invention.

4C is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the second embodiment of the present invention.

4D is an explanatory diagram for explaining the manufacturing method of the semiconductor device according to the second embodiment of the present invention.

[First Embodiment]

Hereinafter, the embodiments of the present invention will be exemplified and explained based on the drawings. The present invention is not limited to the content of the embodiment. However, in the drawing, for ease of description, there are parts shown in the figure enlarged or reduced.

First, the adhesive sheet and bumped wafer used in this embodiment will be described.

(Next slice)

The adhesive sheet 1 used in this embodiment, as shown in FIG. 1, is provided with a support layer 11, an adhesive layer 12, and a resin layer 13 containing the adhesive layer. However, the surface of the resin layer 13 is stuck between the wafers, and may be protected by a release film or the like.

As the support layer 11, a known support can be used as a support of the adhesive sheet, for example, a plastic film or the like can be used. In this way, the supporting body layer 11 is tied between the processed body and supports the body.

Examples of plastic film systems include polyethylene film, polypropylene film, polybutene film, polybutadiene rubber film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, and polyparaphenylene Ethylene dicarboxylate film, polyethylene naphthalate film, polybutylene terephthalate film, polyurethane film, ethylene/vinyl acetate copolymer film, ionomer resin film, ethylene-methacrylic acid Methyl ester copolymer film, ethylene-methacrylate copolymer film, polystyrene film, polycarbonate film, polyimide film, fluororesin film, etc. These films may be single-layer films or laminated films. In addition, in the case of a laminated film, one type of film may be laminated, or two or more types of films may be laminated.

The adhesive layer 12 is formed by using a known adhesive as an adhesive for bonding the sheet. The adhesive layer 12 is used to process the adhered body to firmly fix the support layer 11 and the resin layer 13, and then the resin layer 13 is fixed and left on the adhered body and peeled off from the support layer 11 Become easy. However, the adhesive layer 12 is cured by irradiating energy rays such as ultraviolet rays, and it becomes a peeling off from the resin layer 13 Easy too.

As the adhesive layer, for example, acrylic adhesives, rubber adhesives, silicone adhesives, and urethane adhesives can be cited.

The resin layer 13 is formed by using a well-known adhesive as an adhesive for the adhesive sheet. When passing through the resin layer 13 containing such an adhesive, the bump-attached wafer 2a and the substrate 4 described later can be followed.

Examples of the adhesive system include a thermosetting resin containing epoxy resin and the like, and a thermosetting agent. In addition, the adhesive system may further contain an inorganic filler from the viewpoint of adjusting the thermal expansion coefficient of the cured product. Examples of inorganic fillers include silica, alumina, talc, calcium carbonate, titanium dioxide, ochre hematite, silicon carbide, and boron carbide.

(With bumped wafer)

The bumped wafer 2 (bump member attached) used in this embodiment is provided with a semiconductor wafer 21 and bumps 22 as shown in FIG. 2. However, the bump 22 is formed on the circuit side of the semiconductor wafer 21.

As the semiconductor wafer 21, a known semiconductor wafer can be used, for example, a silicon wafer or the like can be used.

The thickness of the semiconductor wafer 21 is usually 10 μm or more and 1000 μm or less, and preferably 50 μm or more and 750 μm or less.

As the material of the bump 22, a known conductive material can be used. For example, a bump or the like can be used. As the solder system, a known solder material can be used. For example, a lead-free solder containing tin, silver, and copper can be used.

The height of bump 22 is usually 5μm or more and 1000μm or less, and It is desirably 50 μm or more and 500 μm or less.

The cross-sectional shape viewed from the side of the bump 22 is not particularly limited, but it may be semicircular, semi-elliptical, circular, rectangular, or mesa.

The type of bump 22 is not particularly limited, but it can include solder ball bumps, mushroom bumps, columnar bumps, vertebral bumps, cylindrical bumps, point bumps, and cube bumps. Block etc.

(Method of manufacturing semiconductor device)

Next, the method of manufacturing the semiconductor device of this embodiment will be described.

3A to 3F are explanatory diagrams showing the manufacturing method of the semiconductor device of the first embodiment.

In the manufacturing method of the semiconductor device according to this embodiment, first, the resin 13 is formed on the bump forming surface 2A of the bump-attached wafer 2 on which the plural bumps 22 are formed. Specifically, as shown in FIGS. 3A to 3C, the process includes: bonding the resin layer 13 of the adhesive sheet 1 to the bump forming surface 2A of the bump-attached wafer 2 (the sheet bonding process) , And the process of attaching the dicing tape 3 to the back surface of the bumped wafer 2 (dicing tape attaching process), and the process of peeling the support layer 11 and the adhesive layer 12 of the adhesive sheet 1 from the resin layer 13 In the method of (support stripping process), the resin layer 13 is formed on the bump forming surface 2A of the bump-attached wafer 2 on which the plural bumps 22 are formed.

In the method of manufacturing the semiconductor device of this embodiment, next, as shown in FIG. 3D, plasma treatment is applied to the resin layer 13 to remove the coating The resin layer 13 on the surface of the bump 22 (plasma treatment process).

And, as shown in FIG. 3E and FIG. 3F, by having: a process of cutting bump-attached wafer 2 with a dicing blade (dicing process), and picking up bump-attached wafer 2a that is individualized by dicing, and then The method of fixing on the substrate 4 of the body (joining process) is to electrically connect to remove the resin layer 13 and expose the bumps 22 on the surface and the electrodes 42 of the substrate 4.

Hereinafter, the adhesive sheet pasting process, the dicing tape pasting process, the support peeling process, the plasma processing process, the cutting process, and the joining process will be described in more detail.

In the sheet bonding process, as shown in FIG. 3A, the resin layer 13 of the bonding sheet 1 is bonded to the surface formed by the bumps 22 of the bump-attached wafer 2 (bump forming surface 2A).

Here, as the bonding method, a known method can be used, and it is not particularly limited, but a method by pressing is preferable. The pressing system is complete, and pressing is performed simultaneously via pressing rollers or the like. The conditions for pressing are not particularly limited, but the pressing temperature is preferably 40°C or more and 120°C or less. The roller pressure is preferably 0.1MPa or more and 20MPa or less. The pressing speed is preferably 1mm/sec or more and 20mm/sec or less.

In addition, the thickness of the resin layer 13 of the adhesive sheet 1 is preferably smaller than the height dimension of the bumps 22, and the height dimension of the bumps 22 is 0.8 times or less, and the height dimension of the bumps 22 is better 0.1 times or more and 0.7 times or less are particularly desirable. When the thickness of the resin layer 13 is less than the aforementioned upper limit, the resin layer 13 covering the surface of the bump 22 can be made thinner and can be easily removed in the plasma treatment process described later.

In the dicing tape pasting process, as shown in FIG. 3B, the pasting tape 3 is pasted on the unformed surface (rear surface 2B) of the bump 22 of the bump-attached wafer 2.

Here, as the bonding method, a known method can be used, and it is not particularly limited, but a method by pressing is preferable. The pressing system is complete, and pressing is performed simultaneously by pressing the rollers and the like. The pressing conditions are not particularly limited, and can be appropriately set. In addition, for the bonding tape 3, a well-known dicing tape can also be used.

In the support peeling process, as shown in FIG. 3C, the support layer 11 and the adhesive layer 12 of the adhesive sheet 1 are peeled from the resin layer 13.

When the adhesive layer 12 has ultraviolet curability, ultraviolet rays are irradiated from the support layer 11 side as necessary. As a result, the adhesive layer 12 is hardened, the adhesive force of the interface between the adhesive layer 12 and the resin layer 13 is reduced, and the adhesive layer 12 is easily peeled from the resin layer 13.

In the plasma treatment process, as shown in FIG. 3D, a plasma treatment is applied to the resin layer 13 to remove the resin layer 13 covering the surface of the bump 22. Here, the resin layer 13 can be removed according to its purpose. For example, if the purpose is to electrically connect the bump 22 with the exposed surface to the electrode 42 of the substrate 4, it can be removed to the extent that it can be electrically connected. Specifically, the removal amount of the resin layer 13 can be adjusted from the viewpoint of the balance between connection reliability and the function of the resin layer 13.

The plasma processing device for plasma processing is not particularly limited, and a known plasma processing device can be used. In addition, the conditions of the plasma treatment vary depending on the type of the resin layer 13, etc., and are not particularly limited. For example, the following conditions can be adopted.

As the processing gas in the plasma processing, from the viewpoint of the removability of the resin layer, oxygen, argon, trifluoromethane, tetrafluoromethane, and sulfur hexafluoride can be mentioned. Among these, from the viewpoint that the resin layer contains inorganic fillers such as silicon dioxide, the removability is also superior. At least one selected from the group consisting of trifluoromethane, tetrafluoromethane and sulfur hexafluoride One is better, and sulfur hexafluoride is even better. In addition, these processing gas systems may be used alone or in combination of two or more.

The flow rate of the processing gas in the plasma treatment is from the viewpoint of efficiently removing the resin layer, preferably 1 cm ³ /min or more and 1000 cm ³ /min or less, and more preferably 10 cm ³ /min or more and 100 cm ³ /min or less.

In the plasma treatment, the treatment pressure is from the viewpoint of efficiently removing the resin layer, preferably 1 Pa or more and 3000 Pa or less, and more preferably 10 Pa or more and 200 Pa or less.

In terms of the output of the plasma treatment from the viewpoint of removing the resin layer efficiently, 10W or more and 600W or less is preferable.

The treatment time in the plasma treatment is from the viewpoint of efficiently removing the resin layer, and 30 seconds or more and 60 minutes or less is preferable.

In the dicing process, as shown in FIG. 3E, the bump-attached wafer 2 is diced via a dicing blade. In this way, two bump-attached wafers can be sliced into bump-attached wafers 2a.

The cutting device is not particularly limited, and a known cutting device can be used. In addition, the cutting conditions are not particularly limited. However, instead of cutting chips, laser cutting and stealth cutting are used.

In the bonding process, as shown in FIG. 3F, the bump-attached wafer 2 a that has been sliced by dicing is picked up, and then fixed to the substrate 4 provided with the base material 41 and the electrode 42. Since the bumps 22 of the bumped wafer 2a are removed from the resin layer 13 and the surface is exposed, the bumps 22 and the electrodes 42 of the substrate 4 can be electrically connected.

The substrate 4 is not particularly limited, but lead frames, wiring substrates, silicon wafers and silicon wafers with circuits formed on the surface, etc. can be used. The material of the substrate 41 is not particularly limited, but ceramics, plastics, and the like can be cited. In addition, examples of the plastic system include epoxy, bismaleic anhydride iminotriazine, and polyimide.

In the joining process, heat treatment may be applied as necessary to harden the adhesive.

The conditions of the heat treatment can be appropriately set according to the type of adhesive, etc.

In the bonding process, a reflow process may be applied as necessary to melt the bumps 22 of the bump-attached wafer 2a, and solder the bump-attached wafer 2a and the substrate 4 to bond.

The conditions of the reflow treatment can be appropriately set according to the type of solder, etc.

As described above, the semiconductor device 100 can be manufactured.

(Effects of the first embodiment)

According to this embodiment, the following effects can be obtained.

(1) By applying plasma treatment to this resin layer 13, it can be removed The resin layer 13 on the surface of the bump 22 is removed. The plasma treatment system can uniformly treat the entire resin layer on the bump forming surface 2A. Therefore, the resin layer 13 covering the surface of the bump 22 can be removed relatively mechanically, and can be removed simply and efficiently. In addition, even if the cross-sectional shape viewed from the side of the bump 22 is semicircular, semi-elliptical, circular, rectangular or mesa, the resin layer 13 covering the surface of the bump 22 can be removed. Furthermore, in the plasma treatment, the bump 22 is not shaved, and only the resin layer 13 covering the surface of the bump 22 can be easily removed.

(2) The resin layer 13 covering the surface of the bump 22 is removed by electrical connection, and the bump 22 on the exposed surface and the electrode 42 of the substrate 4 can be joined by soldering through the bump 22 on the exposed surface. The bump wafer 2a and the electrodes of the substrate 4 are connected to each other. In this way, a semiconductor device 100 excellent in connection reliability can be obtained.

(3) The bump forming surface 2A of the bump wafer 2a can be provided for bonding the bump wafer 2a and the adhesive layer (resin layer 13) of the substrate 4.

(4) Since the resin layer 13 is provided on the bump-attached wafer 2 and after the plasma treatment is performed, each piece is converted into bump chips 2a, the resin layer 13 can be integrated on the bump chips 2a.

[Second Embodiment]

Hereinafter, the second embodiment of the present invention will be described based on the drawings.

However, the adhesive sheet 1 and the substrate 4 of the present embodiment are substantially the same as the adhesive sheet 1 and the substrate 4 of the aforementioned first embodiment, and the detailed description thereof is omitted or simplified.

4A to 4D are explanatory diagrams showing the manufacturing method of the semiconductor device of the second embodiment.

In the foregoing first embodiment, after the resin layer 13 is formed on the bump-attached wafer 2, plasma treatment is applied, and then diced to be individually sliced into the bump wafer 2 a. On the other hand, in the second embodiment, the bump wafers 2a that are individually sliced are preliminarily formed to form the resin layer 13, and then plasma treatment is applied.

In the manufacturing method of the semiconductor device according to this embodiment, first, the resin layer 13 is formed on the bump forming surface 2A of the bump-attached wafer 2a on which the plural bumps 22 are formed. Specifically, as shown in FIGS. 4A and 4B, through a process of bonding the resin layer 13 of the adhesive sheet 1 to the bump forming surface 2A of the bump wafer 2a (the subsequent sheet pasting process), and Next, when the support layer 11 and the adhesive layer 12 of the sheet 1 are peeled from the resin layer 13 (support peeling process), the bumps of the bump-attached wafer 2a are formed on the bumps 22 On the surface 2A, the resin layer 13 is formed.

In the method of manufacturing the semiconductor device of this embodiment, next, as shown in FIG. 4C, plasma treatment is applied to the resin layer 13 to remove the resin layer 13 covering the surface of the bump 22 (plasma treatment process).

And, as shown in FIG. 4D, when the process (bonding process) of picking up the bumped wafer 2a and then fixing it to the substrate 4 of the body is provided, the resin layer 13 is removed by electrical connection and exposed. There are bumps 22 on the surface, and electrodes 42 on the substrate 4.

For the adhesive sheet pasting process in this embodiment, the support is peeled off The process, the plasma treatment process, and the joining process can use the same methods as the adhesive sheet pasting process, the support peeling process, the plasma treatment process, and the joining process in the aforementioned first embodiment.

According to this embodiment, it is possible to obtain the same effects as the effects (1) to (3) in the aforementioned first embodiment.

[Transformation of the implementation form]

The present invention is not limited to the foregoing embodiments, and modifications, improvements, etc., within the scope of achieving the purpose of the invention are included in the present invention.

For example, in the foregoing embodiment, the resin layer 13 is provided as an adhesive layer for bonding the bump wafer 2a and the substrate 4, but it is not limited to this. That is, in the present invention, the resin layer may be provided for various purposes. For example, the resin layer 13 can also be provided as a filler layer under the bumped wafer 2a and the substrate 4 for reinforcement. In addition, the resin layer 13 may be provided as a protective layer for protecting the bump-attached wafer 2 or the bump-attached wafer 2a. However, in this case, as the material of the resin layer 13, a known material can be used as the material of the underfill material or the protective layer.

In the aforementioned embodiment, the resin layer 13 is in contact with both the bump-attached wafer 2a and the substrate 4, but it is not limited to this. For example, when the resin layer 13 is provided as a protective layer to protect the bump-attached wafer 2a, the resin layer 13 may be in contact with the bump-attached wafer 2a or not in contact with the substrate 4.

In the foregoing embodiment, as the bump-attached member, the attached The bump wafer 2 or the bump-attached wafer 2a is not limited to this. For example, the bump-attached member may be a package with bumps (for example, BGA (Ball grid array), CSP (Chip size package), etc.).

In the foregoing embodiment, the adhesive sheet 1 is used to form the resin layer 13 on the bump formation surface 2A and cover the bump 22, but it is not limited to this. For example, when a resin composition is applied to the bump formation surface 2A and cured, the resin layer 13 may be formed and the bump 22 may be covered.

In the aforementioned embodiment, the adhesive sheet 1 including the support layer 11, the adhesive layer 12, and the resin layer 13 is used, but it is not limited to this. For example, the adhesive sheet 1 system may be a laminated sheet provided with the support layer 11 and the resin layer 13. In this case, in the support peeling process, the support layer 11 may be peeled from the resin layer 13.

Example

Hereinafter, examples are given to explain the present invention in more detail, but the present invention is not limited to these examples at all.

[Example 1]

Prepare a wafer with bumps (size of wafer: 6mm×6mm, thickness of wafer: 200μm, type of bump: ball bump, bump height: 200μm, bump diameter: 250μm, bump pitch: 400μm). In addition, prepare a laminated sheet including a resin layer made of the following resin composition, an adhesive layer (UV curing system), and a support layer.

(Resin composition)

Acrylic polymer: 100 parts by mass

Epoxy resin: 30 parts by mass

Epoxy resin hardener: 1 part by mass

After bonding the resin layer of the laminated sheet to the bump forming surface of the bump-attached wafer, UV irradiation (integrated light amount: 150 mJ/cm ² ) from the laminated sheet side is performed to harden the adhesive layer of the laminated sheet. After that, the support layer and the adhesive layer of the laminated sheet were peeled from the resin layer, and the resin layer was subjected to heat treatment (treatment temperature: 130° C., treatment time: 2 hours). In this way, a resin layer is formed on the bump forming surface of the bump-attached wafer. In addition, the resin layer of the bump-attached wafer is subjected to plasma treatment under the following conditions to remove the resin layer covering the bump surface to obtain a resin-attached bump wafer.

(Conditions for plasma treatment)

Processing gas: Argon

Flow rate of processing gas: 40cm ³ /min

Processing pressure: 100Pa

Output: 250W

Processing time: 15 minutes

Rinse: 1 time

The bump surface of the obtained bumped wafer with a resin layer was observed with a scanning electron microscope (SEM), and the removability of the resin layer was evaluated according to the following criteria. The results obtained are shown in Table 1.

A: The resin layer on the bump can be completely removed without residue.

B: The resin layer on the bumps can be roughly removed, but some residues remain.

C: The resin layer on the bump is not removed and remains.

[Examples 2~7]

According to the conditions shown in Table 1, except for changing the type and flow rate of the processing gas in the plasma treatment, the same procedure as in Example 1 was performed to obtain a resin layer forming bump wafer.

The bump surface of the obtained bumped wafer with a resin layer was observed with a scanning electron microscope (SEM), and the removability of the resin layer was evaluated according to the same criteria as in Example 1. The results obtained are shown in Table 1.

[Comparative Example 1]

Except that the plasma treatment was not applied, the same procedure as in Example 1 was used to obtain a bump wafer with a resin layer.

The bump surface of the obtained bumped wafer with a resin layer was observed with a scanning electron microscope (SEM), and the removability of the resin layer was evaluated according to the same criteria as in Example 1. The results obtained are shown in Table 1.

From the results shown in Table 1, it is understood that among the bumped wafers with a resin layer obtained in Examples 1 to 7, it was confirmed that the resin on the bumps can be removed. Therefore, it is possible to efficiently manufacture a semiconductor device with excellent connection reliability by removing the resin layer by electrical connection, and adding the bumps on the surface and the electrodes of the substrate.

In contrast, in the bump wafer with a resin layer obtained in Comparative Example 1, it was found that the resin on the bumps remained.

[Example 8]

The same procedure as in Example 1 was performed except that a resin layer composed of the following resin composition, an adhesive layer (UV curing system), and a laminated sheet of a support layer were used to obtain a bumped wafer with a resin layer .

(Resin composition)

Acrylic polymer: 100 parts by mass

Epoxy resin: 30 parts by mass

Silica filler: 30 parts by mass

Epoxy resin hardener: 1 part by mass

The bump surface of the obtained bumped wafer with a resin layer was observed with a scanning electron microscope (SEM), and the removability of the resin layer was evaluated according to the same criteria as in Example 1. The results obtained are shown in Table 2.

[Examples 9~14]

In accordance with the conditions shown in Table 2, except for changing the type and flow rate of the processing gas in the plasma processing, the same procedure as in Example 8 was performed to obtain a resin layer forming bump wafer.

The bump surface of the obtained bumped wafer with a resin layer was observed with a scanning electron microscope (SEM), and the removability of the resin layer was evaluated according to the same criteria as in Example 1. The results obtained are shown in Table 2.

[Comparative Example 2]

Except that the plasma treatment was not applied, Example 8 was used in the same manner to obtain a resin layer-formed bump wafer.

The bump surface of the obtained bumped wafer with a resin layer was observed with a scanning electron microscope (SEM), and the removability of the resin layer was evaluated according to the same criteria as in Example 1. The results obtained are shown in Table 2.

From the results shown in Table 2, it is understood that among the bumped wafers with a resin layer obtained in Examples 8 to 14, it was confirmed that the resin on the bumps can be removed. Therefore, it is possible to efficiently manufacture a semiconductor device with excellent connection reliability by removing the resin layer by electrical connection, and adding the bumps on the surface and the electrodes of the substrate.

In addition, when comparing the results of Examples 1 to 7 and Examples 8 to 14, it is understood that the resin layer does not contain a silica filler, and the resin layer has superior removability. However, when the resin layer contains silica filler, when at least sulfur hexafluoride is used as the processing gas, or when tetrafluoromethane and oxygen are used as the processing gas, the removal of the resin layer is confirmed. Sex is superior.

In contrast, in the bumped wafer with a resin layer obtained in Comparative Example 2, it was found that resin on the bumps remained.

2‧‧‧Bumped wafer

3‧‧‧Cutting tape

13‧‧‧Resin layer

21‧‧‧Semiconductor Wafer

22‧‧‧ bump

Claims (4)

A method of manufacturing a semiconductor device, comprising: a process of forming a resin layer on a bump forming surface with bump members on which plural bumps are formed, and applying plasma treatment to the resin layer, and The process of removing the resin layer covering the surface of the bump; the treatment gas system of the plasma treatment is at least one selected from the group consisting of argon, trifluoromethane, tetrafluoromethane, and sulfur hexafluoride . A method of manufacturing a semiconductor device, comprising: a process of forming a resin layer on a bump-forming surface with bump members on which plural bumps are formed, and applying plasma treatment to the resin layer, and The process of removing the resin layer covering the surface of the bump; the flow rate of the process gas in the plasma treatment is 1 cm ³ /min or more and 1000 cm ³ /min or less. A method of manufacturing a semiconductor device, comprising: a process of forming a resin layer on a bump forming surface with bump members on which plural bumps are formed, and applying plasma treatment to the resin layer, and The process of removing the resin layer covering the surface of the bump; the processing pressure of the plasma treatment is 1 Pa or more and 3000 Pa or less. For example, the method of manufacturing a semiconductor device described in any one of items 1 to 3 of the scope of the patent application includes: Electrically connect the engineer who removes the resin layer to expose the bumps on the surface and the electrodes of the substrate.

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