TWI693731B - High-frequency ultrasound piezoelectric element, manufacturing method thereof and the high-frequency ultrasound probe comprising the high-frequency ultrasound piezoelectric element - Google Patents
High-frequency ultrasound piezoelectric element, manufacturing method thereof and the high-frequency ultrasound probe comprising the high-frequency ultrasound piezoelectric element Download PDFInfo
- Publication number
- TWI693731B TWI693731B TW105119414A TW105119414A TWI693731B TW I693731 B TWI693731 B TW I693731B TW 105119414 A TW105119414 A TW 105119414A TW 105119414 A TW105119414 A TW 105119414A TW I693731 B TWI693731 B TW I693731B
- Authority
- TW
- Taiwan
- Prior art keywords
- piezoelectric
- piezoelectric element
- lower electrode
- frequency ultrasonic
- concave portion
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000523 sample Substances 0.000 title claims description 38
- 238000002604 ultrasonography Methods 0.000 title abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000005245 sintering Methods 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 239000002131 composite material Substances 0.000 claims description 29
- 238000005507 spraying Methods 0.000 claims description 18
- 238000003491 array Methods 0.000 claims description 2
- 239000007921 spray Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 109
- 239000000463 material Substances 0.000 description 15
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 9
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- -1 zirconium alkoxide Chemical class 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
- H10N30/097—Forming inorganic materials by sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/13—Tomography
- A61B8/14—Echo-tomography
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
Description
本發明係關於高頻超音波壓電元件、其製造方法、以及包含該高頻超音波壓電元件的高頻超音波探頭,尤其係包含採用噴塗法(spray method)形成的壓電膜的高頻超音波壓電元件、其製造方法以及包含該高頻超音波壓電元件的高頻超音波探頭(high-frequency ultrasound probe)。 The present invention relates to a high-frequency ultrasonic piezoelectric element, a method for manufacturing the same, and a high-frequency ultrasonic probe including the high-frequency ultrasonic piezoelectric element, and particularly to a high-frequency ultrasonic piezoelectric element including a piezoelectric film formed by a spray method, Manufacturing method and high-frequency ultrasound probe (high-frequency ultrasound probe) including the high-frequency ultrasound piezoelectric element.
以往,使用超音波探頭等對有機體內部等照射超音波,得到來自該有機體內部的反射波,對所得的反射波實施信號處理使其可視化,從而對有機體的性狀進行診斷。超音波的收發採用壓電元件,作為壓電元件的材料,通常使用鋯鈦酸鉛(Pb(Zr,Ti)O3:PZT)等具有鈣鈦礦結晶結構的氧化系壓電材料。壓電元件通常採用以下方式製造:將由PZT等製成的粉末成形為立方體等預定形狀,對該成形體進行燒結得到陶瓷燒結體,然後將該燒結體作為壓電膜通過切削、研磨等加工成所需形狀,在該壓電膜上安裝電極,從而製成壓電元件(例如參照專利文獻1等)。 Conventionally, an ultrasonic probe or the like is used to irradiate ultrasonic waves into an organism or the like to obtain a reflected wave from the inside of the organism, and the resulting reflected wave is signal-processed and visualized to diagnose the properties of the organism. A piezoelectric element is used for the transmission and reception of ultrasonic waves. As the material of the piezoelectric element, an oxide-based piezoelectric material having a perovskite crystal structure such as lead zirconate titanate (Pb(Zr,Ti)O 3 :PZT) is generally used. Piezoelectric elements are usually manufactured by molding powder made of PZT into a predetermined shape such as a cube, sintering the molded body to obtain a ceramic sintered body, and then processing the sintered body as a piezoelectric film by cutting, grinding, etc. In a desired shape, an electrode is mounted on the piezoelectric film to form a piezoelectric element (for example, refer to Patent Document 1 and the like).
近年來,要求能夠獲得更高清晰度的超音波圖像,為了得到 高清晰度的超音波圖像,需要能夠以更高頻率收發超音波的壓電元件。在使用同一材料作為壓電元件的材料的情況下,隨著壓電膜厚度的降低,以高頻率收發超音波成為可能。具體而言,壓電元件的驅動頻率與壓電元件的厚度成反比關係,具有100μm的壓電膜的壓電元件以例如20MHz驅動時,若使與之相同的材料製成的壓電元件的壓電膜厚度為100μm的五分之一即20μm,則通常其驅動頻率為20MHz的5倍即100MHz。如果使用以這樣100MHz的高頻驅動的壓電元件,則所得的超音波圖像的照射方向空間分辨率是驅動頻率為20MHz的情況的5倍。因此,為了得到能夠獲得更高清晰度的超音波圖像的壓電元件,需要形成膜厚更小的壓電膜。 In recent years, it has been required to obtain ultrasound images with higher definition. High-definition ultrasound images require piezoelectric elements that can send and receive ultrasound at higher frequencies. When the same material is used as the material of the piezoelectric element, as the thickness of the piezoelectric film decreases, it becomes possible to transmit and receive ultrasonic waves at a high frequency. Specifically, the driving frequency of the piezoelectric element is inversely proportional to the thickness of the piezoelectric element. When a piezoelectric element having a 100 μm piezoelectric film is driven at, for example, 20 MHz, if the piezoelectric element made of the same material is used A piezoelectric film with a thickness of one-fifth of 100 μm, that is, 20 μm, usually has a driving frequency that is 5 times that of 20 MHz, that is, 100 MHz. If a piezoelectric element driven at such a high frequency of 100 MHz is used, the spatial resolution of the obtained ultrasound image in the irradiation direction is five times that of the case where the driving frequency is 20 MHz. Therefore, in order to obtain a piezoelectric element capable of obtaining a higher-definition ultrasonic image, it is necessary to form a piezoelectric film with a smaller thickness.
先前技術文獻 Prior technical literature
專利文獻 Patent Literature
專利文獻1:日本特開H07-45124號公報。 Patent Document 1: Japanese Patent Laid-Open No. H07-45124.
然而,如上所述通過切削、研磨等機械加工對PZT製成的燒結體進行的薄膜化效率低,而且所得薄膜的薄度也有限。進而,如果對薄度為數十μm~數百μm的由PZT製成的燒結體進行機械加工則有可能產生裂痕等。 However, as described above, the thinning of the sintered body made of PZT by mechanical processing such as cutting and grinding is inefficient, and the thinness of the resulting thin film is also limited. Furthermore, if a sintered body made of PZT having a thickness of several tens to hundreds of μm is machined, cracks and the like may occur.
本發明是鑑於上述問題而完成的,其目的在於能夠通過簡便的方法形成更薄的壓電膜,使用所得的壓電膜得到可收發高清超音波圖像的高頻超音波壓電元件。 The present invention was made in view of the above-mentioned problems, and its object is to form a thinner piezoelectric film by a simple method, and use the resulting piezoelectric film to obtain a high-frequency ultrasonic piezoelectric element capable of transmitting and receiving high-definition ultrasonic images.
為了達成上述目的,本發明通過採用噴塗法將溶膠-凝膠溶液與壓電粉末的複合體塗佈在電極上而形成壓電膜,製造高頻超音波壓電元件。 In order to achieve the above object, the present invention applies a spray method to apply a composite of a sol-gel solution and piezoelectric powder on an electrode to form a piezoelectric film, thereby manufacturing a high-frequency ultrasonic piezoelectric element.
具體而言,本發明所述的高頻超音波壓電元件的製造方法特徵在於,包括:準備下部電極的步驟;採用噴塗法在下部電極上塗佈含有溶膠-凝膠溶液和壓電粉末的複合體,對所塗佈的複合體進行燒結形成壓電膜的步驟;以及在壓電膜上形成上部電極的步驟。 Specifically, the method for manufacturing a high-frequency ultrasonic piezoelectric element according to the present invention is characterized by comprising: a step of preparing a lower electrode; a composite body containing a sol-gel solution and a piezoelectric powder is coated on the lower electrode by spray coating Sintering the coated composite to form a piezoelectric film; and forming an upper electrode on the piezoelectric film.
根據本發明所述的高頻超音波壓電元件的製造方法,採用噴塗法在下部電極上塗佈含有溶膠-凝膠溶液和壓電粉末的複合體,因此通過適當調節噴出的該複合體的排出量、排出時間等,能夠簡便地在所需區域形成所需膜厚的壓電膜,還能夠形成數μm的極薄壓電膜。 According to the manufacturing method of the high-frequency ultrasonic piezoelectric element according to the present invention, a composite body containing a sol-gel solution and a piezoelectric powder is coated on the lower electrode by spraying method, so by appropriately adjusting the discharge amount of the composite body discharged , Discharge time, etc., it is possible to easily form a piezoelectric film of a desired film thickness in a desired area, and it is also possible to form an extremely thin piezoelectric film of several μm.
本發明所述的高頻超音波壓電元件的製造方法中,在形成上部電極的步驟中,可以在壓電膜上配設具有配置成陣列(array)狀且將壓電膜露出的複數個開口部的遮罩,覆蓋壓電膜和遮罩形成上部電極,然後將遮罩除去。 In the method for manufacturing a high-frequency ultrasonic piezoelectric element according to the present invention, in the step of forming the upper electrode, the piezoelectric film may be provided with a plurality of openings arranged in an array and exposing the piezoelectric film The mask, covering the piezoelectric film and the mask to form the upper electrode, and then removing the mask.
由此,在壓電膜上以陣列狀形成上部電極,因此所得的壓電元件可適用於所謂的相控陣型(phased array type)超音波探頭,這種超音波探頭能夠控制位於複數個上部電極正下方的壓電膜的各區域相互以特定時間差發射超音波,利用電子掃描獲得有機體內部的截面圖像。 Thus, the upper electrodes are formed in an array on the piezoelectric film, so the resulting piezoelectric element can be applied to a so-called phased array type ultrasonic probe, which can control a plurality of upper electrodes The regions of the piezoelectric film directly below each other emit ultrasonic waves with a certain time difference, and electronic scanning is used to obtain a cross-sectional image inside the organism.
在此情況下,可以在準備下部電極的步驟中,準備表面具有沿長度方向延伸的凹部的板狀下部電極;在形成壓電膜的步驟中,在凹部的底面形成壓電膜;在形成上部電極的步驟中,在壓電膜上形成配置成沿 凹部的延伸方向排列的複數個上部電極。 In this case, in the step of preparing the lower electrode, a plate-shaped lower electrode having a concave portion extending in the longitudinal direction on the surface can be prepared; in the step of forming the piezoelectric film, the piezoelectric film is formed on the bottom surface of the concave portion; In the electrode step, the piezoelectric film is formed Plural upper electrodes aligned in the extending direction of the recess.
由此,複數個上部電極在下部電極的凹部內沿該凹部的延伸方向(下部電極的長度方向)排列,因此可以抑制並彙聚從位於這些上部電極正下方的壓電膜的各區域發射的超音波在與凹部的延伸方向垂直的方向(下部電極的寬度方向)上的擴散。因此,該壓電元件用於超音波探頭時,無需設置聲透鏡,能夠減少部件數量降低製造成本。 As a result, a plurality of upper electrodes are arranged in the recessed portion of the lower electrode along the extending direction of the recessed portion (the longitudinal direction of the lower electrode), so that the super-emission from each region of the piezoelectric film located directly under these upper electrodes can be suppressed and concentrated The sound wave diffuses in a direction perpendicular to the extending direction of the concave portion (width direction of the lower electrode). Therefore, when the piezoelectric element is used in an ultrasonic probe, it is not necessary to provide an acoustic lens, and the number of parts can be reduced and the manufacturing cost can be reduced.
本發明所述的高頻超音波壓電元件的製造方法中,可以在形成壓電膜的步驟中,在下部電極上配設具有配置成陣列狀且將下部電極露出的複數個開口部的遮罩,然後採用噴塗法在下部電極上塗佈複合體,對複合體進行燒結形成配置成陣列狀的複數個壓電膜。 In the method for manufacturing a high-frequency ultrasonic piezoelectric element according to the present invention, in the step of forming a piezoelectric film, a mask having a plurality of openings arranged in an array and exposing the lower electrode may be arranged on the lower electrode, Then, the composite body is coated on the lower electrode by spray coating, and the composite body is sintered to form a plurality of piezoelectric films arranged in an array.
由此,能夠簡便地在下部電極上形成配置成陣列狀的複數個薄壓電膜。另外,由於能夠以陣列狀形成複數個薄壓電膜,因此所得的壓電元件可適用於所謂的相控陣型超探頭,這種超音波探頭能夠控制複數個壓電膜相互以特定時間差發射超音波,利用電子掃描獲得有機體內部的截面圖像。 Thus, a plurality of thin piezoelectric films arranged in an array can be easily formed on the lower electrode. In addition, since a plurality of thin piezoelectric films can be formed in an array, the resulting piezoelectric element can be applied to a so-called phased array type superprobe. This ultrasonic probe can control a plurality of piezoelectric films to emit ultrasound at a specific time difference with each other. Acoustic wave, using electronic scanning to obtain a cross-sectional image of the inside of the organism.
在此情況下,可以在準備下部電極的步驟中,準備表面具有沿長度方向延伸的凹部的板狀下部電極;在形成壓電膜的步驟中,在下部電極的凹部的底面形成配置成沿該凹部的延伸方向排列的複數個壓電膜。 In this case, in the step of preparing the lower electrode, a plate-shaped lower electrode having a concave portion extending in the longitudinal direction on the surface may be prepared; in the step of forming the piezoelectric film, the bottom surface of the concave portion of the lower electrode is formed to be arranged along the A plurality of piezoelectric films arranged in the extending direction of the concave portion.
由此,複數個壓電膜在下部電極的凹部的底面沿該凹部的延伸方向(下部電極的長度方向)排列,因此能夠抑制並彙聚從壓電膜發射的超音波在與凹部的延伸方向垂直的方向(下部電極的寬度方向)上的擴散。因此,該壓電元件用於超音波探頭時,無需設置聲透鏡,能夠減少部件數量 降低製造成本。 As a result, a plurality of piezoelectric films are arranged on the bottom surface of the concave portion of the lower electrode along the extending direction of the concave portion (the longitudinal direction of the lower electrode), and therefore it is possible to suppress and condense the ultrasonic waves emitted from the piezoelectric film perpendicular to the extending direction of the concave portion In the direction of (the width direction of the lower electrode). Therefore, when the piezoelectric element is used in an ultrasonic probe, there is no need to provide an acoustic lens, and the number of parts can be reduced Reduce manufacturing costs.
本發明所述的高頻超音波壓電元件的製造方法中,可以在準備下部電極的步驟中,準備端面具有凹部的棒狀下部電極;在形成壓電膜的步驟中,在下部電極的凹部的底面形成壓電膜。 In the method for manufacturing a high-frequency ultrasonic piezoelectric element according to the present invention, in the step of preparing the lower electrode, a rod-shaped lower electrode having a concave portion on the end surface may be prepared; in the step of forming the piezoelectric film, on the bottom surface of the concave portion of the lower electrode A piezoelectric film is formed.
由此,在棒狀下部電極的端面上的凹部的底面形成壓電膜,因此能夠抑制並彙聚從壓電膜發射的超音波從棒狀下部電極的軸向向外側的擴散。因此,與上述情況相同,該壓電元件用於超音波探頭時,無需設置聲透鏡,能夠減少部件數量降低製造成本。另外,通過在棒狀下部電極的端面設置例如單一的壓電膜,能夠適用於可利用機械掃描獲得有機體內部的截面圖像的所謂的單振子型超音波探頭,而非上述相控陣型超音波探頭。 As a result, the piezoelectric film is formed on the bottom surface of the concave portion on the end surface of the rod-shaped lower electrode. Therefore, it is possible to suppress and condense the diffusion of ultrasonic waves emitted from the piezoelectric film from the axial direction of the rod-shaped lower electrode to the outside. Therefore, as in the case described above, when the piezoelectric element is used in an ultrasonic probe, it is not necessary to provide an acoustic lens, and the number of parts can be reduced and the manufacturing cost can be reduced. In addition, by providing, for example, a single piezoelectric film on the end surface of the rod-shaped lower electrode, it can be applied to a so-called single-vibrator ultrasonic probe that can obtain a cross-sectional image of the inside of an organism by mechanical scanning, instead of the above-mentioned phased array ultrasonic Probe.
本發明所述的高頻超音波壓電元件的製造方法中,可以使用由PZT製成的壓電粉末作為壓電粉末。 In the method for manufacturing a high-frequency ultrasonic piezoelectric element according to the present invention, a piezoelectric powder made of PZT can be used as the piezoelectric powder.
本發明所述的高頻超音波壓電元件特徵在於,通過上述製造方法而得到,具備下部電極、採用噴塗法在下部電極上塗佈含有溶膠-凝膠溶液和壓電粉末的複合體後進行燒結而形成的壓電膜、以及在壓電膜上形成的上部電極。 The high-frequency ultrasonic piezoelectric element according to the present invention is characterized in that it is obtained by the above-mentioned manufacturing method, is provided with a lower electrode, and a composite body containing a sol-gel solution and a piezoelectric powder is coated on the lower electrode by spraying and then sintered The formed piezoelectric film and the upper electrode formed on the piezoelectric film.
根據本發明所述的高頻超音波壓電元件,由於包含通過用噴塗法塗佈含有溶膠-凝膠溶液和壓電粉末的複合體而形成的壓電膜,因此能夠簡便地調整壓電膜的膜厚,也容易得到膜厚較薄的壓電膜。因此,由於具有膜厚較薄的壓電膜,容易得到能夠收發更高頻率的超音波的高頻超音波壓電元件。 According to the high-frequency ultrasonic piezoelectric element according to the present invention, since the piezoelectric film formed by coating the composite containing the sol-gel solution and the piezoelectric powder by the spray coating method is included, the film of the piezoelectric film can be easily adjusted If it is thick, it is easy to obtain a thin piezoelectric film. Therefore, since it has a thin piezoelectric film, it is easy to obtain a high-frequency ultrasonic piezoelectric element capable of transmitting and receiving ultrasonic waves of higher frequencies.
本發明所述的高頻超音波壓電元件中,上部電極可在壓電膜上以陣列狀形成有複數個。 In the high-frequency ultrasonic piezoelectric element according to the present invention, the upper electrode may be formed in a plurality of arrays on the piezoelectric film.
由此,上部電極在壓電膜上以陣列狀排列,因此所得的壓電元件可適用於所謂的相控陣型超音波探頭,這種超音波探頭通過控制位於複數個上部電極正下方的壓電膜的各區域相互以特定時間差發射超音波,可利用電子掃描獲得有機體內部的截面圖像。 As a result, the upper electrodes are arranged in an array on the piezoelectric film, so the resulting piezoelectric element can be applied to a so-called phased array ultrasonic probe. This ultrasonic probe controls the piezoelectrics located directly below a plurality of upper electrodes Each area of the membrane emits ultrasonic waves with a certain time difference from each other, and a cross-sectional image inside the organism can be obtained by electronic scanning.
在此情況下,下部電極為板狀且其表面具有沿長度方向延伸的凹部,壓電膜形成在凹部的底面上,複數個上部電極可沿凹部的延伸方向排列而配置在壓電膜上。 In this case, the lower electrode is plate-shaped and has a concave portion extending in the longitudinal direction on its surface, the piezoelectric film is formed on the bottom surface of the concave portion, and a plurality of upper electrodes can be arranged on the piezoelectric film along the extending direction of the concave portion.
由此,複數個上部電極在下部電極的凹部內沿該凹部的延伸方向(下部電極的長度方向)排列,因此能夠抑制並彙聚從位於這些上部電極正下方的壓電膜的各區域發射的超音波在與凹部的延伸方向垂直的方向(下部電極的寬度方向)上的擴散。因此,該壓電元件用於超音波探頭時,無需設置聲透鏡,能夠減少部件數量降低製造成本。 As a result, the plurality of upper electrodes are arranged in the recessed portion of the lower electrode along the extending direction of the recessed portion (the longitudinal direction of the lower electrode), so that the super-emission from each region of the piezoelectric film located directly under these upper electrodes can be suppressed and concentrated The sound wave diffuses in a direction perpendicular to the extending direction of the concave portion (width direction of the lower electrode). Therefore, when the piezoelectric element is used in an ultrasonic probe, it is not necessary to provide an acoustic lens, and the number of parts can be reduced and the manufacturing cost can be reduced.
本發明所述的高頻超音波壓電元件中,壓電膜可在下部電極上以陣列狀形成有複數個。 In the high-frequency ultrasonic piezoelectric element according to the present invention, a plurality of piezoelectric films may be formed in an array on the lower electrode.
由此,由於壓電膜以陣列狀形成有複數個,因此能夠適用於所謂的相控陣型超音波探頭,這種超音波探頭控制複數個壓電膜相互以特定時間差發射超音波,從而可利用電子掃描獲得有機體內部的截面圖像。 Thus, since a plurality of piezoelectric films are formed in an array, it can be applied to a so-called phased array ultrasonic probe, which controls a plurality of piezoelectric films to emit ultrasonic waves with a specific time difference from each other, which can be used Electronic scanning obtains a cross-sectional image inside the organism.
在此情況下,下部電極為板狀且其表面具有沿長度方向延伸的凹部,複數個壓電膜可沿該凹部的延伸方向排列而配置在下部電極的凹部的底面上。 In this case, the lower electrode is plate-shaped and has a concave portion extending in the longitudinal direction on its surface, and a plurality of piezoelectric films may be arranged along the extending direction of the concave portion and arranged on the bottom surface of the concave portion of the lower electrode.
由此,複數個壓電膜在下部電極的凹部的底面沿該凹部的延伸方向(下部電極的長度方向)排列,因此能夠抑制並彙聚從壓電膜發射的超音波在與凹部的延伸方向垂直的方向(下部電極的寬度方向)上的擴散。因此,該壓電元件用於超音波探頭時,無需設置聲透鏡,能夠減少部件數量降低製造成本。 As a result, a plurality of piezoelectric films are arranged on the bottom surface of the concave portion of the lower electrode along the extending direction of the concave portion (the longitudinal direction of the lower electrode), and therefore it is possible to suppress and condense the ultrasonic waves emitted from the piezoelectric film perpendicular to the extending direction of the concave portion In the direction of (the width direction of the lower electrode). Therefore, when the piezoelectric element is used in an ultrasonic probe, it is not necessary to provide an acoustic lens, and the number of parts can be reduced and the manufacturing cost can be reduced.
本發明所述的高頻超音波壓電元件中,下部電極為棒狀且其端面具有凹部,壓電膜可形成在凹部的底面上。 In the high-frequency ultrasonic piezoelectric element according to the present invention, the lower electrode is rod-shaped and has a concave portion at its end surface, and the piezoelectric film may be formed on the bottom surface of the concave portion.
由此,在棒狀下部電極的端面上的凹部的底面形成壓電膜,因此能夠抑制並彙聚從壓電膜發射的超音波從棒狀下部電極的軸向向外側的擴散。因此,與上述情況相同,該壓電元件用於超音波探頭時,無需設置聲透鏡,能夠減少部件數量降低製造成本。另外,通過在棒狀下部電極的端面設置例如單一的壓電膜,能夠適用於可利用機械掃描獲得有機體內部的截面圖像的所謂的單振子型超音波探頭,而非上述相控陣型超音波探頭。 As a result, the piezoelectric film is formed on the bottom surface of the concave portion on the end surface of the rod-shaped lower electrode. Therefore, it is possible to suppress and condense the diffusion of ultrasonic waves emitted from the piezoelectric film from the axial direction of the rod-shaped lower electrode to the outside. Therefore, as in the case described above, when the piezoelectric element is used in an ultrasonic probe, it is not necessary to provide an acoustic lens, and the number of parts can be reduced and the manufacturing cost can be reduced. In addition, by providing, for example, a single piezoelectric film on the end surface of the rod-shaped lower electrode, it can be applied to a so-called single-vibrator ultrasonic probe that can obtain a cross-sectional image of the inside of an organism by mechanical scanning, instead of the above-mentioned phased array ultrasonic Probe.
本發明所述的高頻超音波壓電元件中,壓電粉末可為由PZT製成的壓電粉末。 In the high-frequency ultrasonic piezoelectric element according to the present invention, the piezoelectric powder may be a piezoelectric powder made of PZT.
本發明所述的高頻超音波探頭特徵在於,包含上述高頻超音波壓電元件。 The high-frequency ultrasonic probe according to the present invention is characterized by including the above-mentioned high-frequency ultrasonic piezoelectric element.
根據本發明所述的高頻超音波探頭,由於包含具有上述作用和效果的高頻超音波壓電元件,因此能夠簡便地得到更薄的壓電膜並可收發高頻率的超音波,其結果,能夠獲得更高清晰度的圖像。 According to the high-frequency ultrasonic probe according to the present invention, since the high-frequency ultrasonic piezoelectric element having the above-mentioned functions and effects is included, a thinner piezoelectric film can be easily obtained and high-frequency ultrasonic waves can be transmitted and received. As a result, more High definition image.
根據本發明所述的高頻超音波壓電元件、其製造 方法、以及包含該高頻超音波壓電元件的高頻超音波探頭,採用噴塗法在下部電極上塗佈含有溶膠-凝膠溶液和壓電粉末的複合體,因此可以簡便地得到極薄的壓電膜,其結果可收發更高頻率的超音波,能夠得到可獲得更高清晰度的圖像的高頻超音波探頭。 High-frequency ultrasonic piezoelectric element according to the present invention, and its manufacture Method, and a high-frequency ultrasonic probe including the high-frequency ultrasonic piezoelectric element, a composite body containing a sol-gel solution and a piezoelectric powder is coated on the lower electrode by a spray coating method, so an extremely thin piezoelectric film can be obtained simply, As a result, higher frequency ultrasonic waves can be transmitted and received, and a high-frequency ultrasonic probe capable of obtaining higher-definition images can be obtained.
10、20、30‧‧‧高頻超音波壓電元件 10, 20, 30‧‧‧ High frequency ultrasonic piezoelectric element
11、21、31‧‧‧下部電極 11, 21, 31‧‧‧ Lower electrode
12、22、32‧‧‧壓電膜 12, 22, 32‧‧‧ Piezo film
13‧‧‧遮罩層 13‧‧‧Mask layer
14‧‧‧開口部 14‧‧‧ opening
15、25、35‧‧‧上部電極 15, 25, 35‧‧‧ Upper electrode
26、36‧‧‧凹部 26、36‧‧‧recess
圖1(a)~(f)係依次示出本發明的實施例1之高頻超音波壓電元件的製造工序的剖視圖。 1(a) to (f) are cross-sectional views sequentially showing the manufacturing process of the high-frequency ultrasonic piezoelectric element according to Embodiment 1 of the present invention.
圖2係表示本發明的實施例1之高頻超音波壓電元件的俯視圖。 2 is a plan view showing a high-frequency ultrasonic piezoelectric element according to Embodiment 1 of the present invention.
圖3係表示本發明的實施例1的一個變形例之高頻超音波壓電元件的剖視圖。 3 is a cross-sectional view showing a high-frequency ultrasonic piezoelectric element according to a modification of Embodiment 1 of the present invention.
圖4(a)係表示本發明的實施例2之高頻超音波壓電元件的剖視圖,(b)係表示本發明的實施例2之高頻超音波壓電元件的俯視圖。 4(a) is a cross-sectional view showing a high-frequency ultrasonic piezoelectric element according to Embodiment 2 of the present invention, and (b) is a plan view showing a high-frequency ultrasonic piezoelectric element according to Embodiment 2 of the present invention.
以下,基於圖式對本發明較好之實施例進行詳細說明。 Hereinafter, preferred embodiments of the present invention will be described in detail based on the drawings.
實施例1 Example 1
以下,參照圖1(a)~(f)和圖2對本發明的實施例1之高頻超音波壓電元件10的製造方法及其構成進行說明。
Hereinafter, the manufacturing method and the configuration of the high-frequency ultrasonic
首先,如圖1(a)所示,準備平坦的板狀下部電極11。作為下部電極11的材料,只要是通常用作電極的金屬構成的導電性材料則無特別限制。另外,下部電極11的厚度也無特別限制,只要從壓電元件的小型化和強度的觀點出發適當選擇即可,例如為10μm~150μm。
First, as shown in FIG. 1(a), a flat plate-shaped
接著,如圖1(b)所示,在下部電極11上形成壓電膜12。壓電膜12通過採用噴塗法利用噴塗裝置將含有溶膠-凝膠溶液和壓電粉末的複合體塗佈在下部電極11上,對所塗佈的複合體進行燒結而得到。例如,溶膠-凝膠溶液通過將金屬醇鹽溶解在乙醇、甲醇等溶劑中而得到,較佳為使用含有鉛醇鹽、鋯醇鹽和鈦醇鹽的PZT溶膠-凝膠溶液。另外,壓電粉末的材料可以使用PZT。溶膠-凝膠溶液與壓電粉末的組成比(重量比)可為例如溶膠-凝膠溶液:壓電粉末=1:1~2:1。另外,壓電粉末的粒徑較佳為50~1000nm。噴塗法中復合體的排出量、排出時間、以及從噴出至下部電極的距離等可以根據所形成的壓電膜的膜厚等適當改變。為了得到可收發更高頻率的超音波的壓電元件,可以對壓電膜進行薄膜化,若採用噴塗法則可通過控制上述複合體的排出量或排出時間等容易地進行薄膜化,例如,在排出時間為200ms的條件下,可以形成約10μm膜厚的複合體層。採用該噴塗法進行塗佈後,將復合體層在約150℃下乾燥5分鐘、在約450℃下臨時燒結(temporarily sintering)5分鐘、在約650℃下燒成5分鐘,然後例如通過用電暈放電(corona discharge)進行極化處理得到壓電膜12。
Next, as shown in FIG. 1( b ), a
接著,如圖1(c)所示,在壓電膜12上配設遮罩層13。遮罩層13的材料可以使用例如樹脂、玻璃、木材或紙等材料,但並不限於此。
Next, as shown in FIG. 1( c ), a
接著,如圖1(d)所示,在遮罩層13上形成將壓電膜12露出的複數個開口部14。開口部14設置在之後需要形成上部電極15的位置,在本實施例中沿下部電極的長度方向等間隔配置。開口部14的形成根據遮罩層13的材料,可以採用蝕刻法等化學處理,也可以採用切削等機械處理。另,本實施例中,將遮罩層13設置在壓電膜12上之後形成開口部14,但也可以
在將遮罩層13設置在壓電膜12上之前預先在遮罩層13上形成開口部14,再將形成有開口部14的遮罩層13配置在壓電膜12上。
Next, as shown in FIG. 1( d ), a plurality of
接著,如圖1(e)所示,在壓電膜12和遮罩層13上形成上部電極15。上部電極15的材料只要是通常可用作電極的導電性材料則無特別限制,例如可使用金、銀等金屬。另外,上部電極15的形成可以採用蒸鍍法、濺射法等常規方法。上部電極15的厚度也無特別限制,只要從壓電元件的小型化和強度的觀點出發適當選擇即可,例如為10μm~150μm。
Next, as shown in FIG. 1( e ), the
接著,如圖1(f)所示,將遮罩層13除去,從而僅在開口部14內的壓電膜12上殘留上部電極15。雖未圖示,之後通過將與電源相連的引線分別連接在下部電極11和複數個上部電極15上,可以得到本實施例之高頻超音波壓電元件10。
Next, as shown in FIG. 1( f ), the
為方便起見,圖1中示出了在遮罩層13上形成3個開口部14,形成3個上部電極15,但是當然並不限於此,也可以如圖2所示形成5個上部電極15,還可以形成5個以上所需數量的上部電極15。本實施例中,在壓電膜12上以陣列狀形成複數個上部電極15,具體而言,如圖1(f)和圖2所示,上部電極15配置成沿下部電極11的長度方向排列。由此,通過在用於將有機體內部的截面圖像化的超音波探頭中使用配置有上部電極15的形態的高頻超音波壓電元件10,可以得到所謂的相控陣型的超音波探頭,這種超音波探頭通過控制對上部電極施加電壓的時刻以使位於複數個上部電極正下方的壓電膜的各區域相互以特定時間差發射超音波,從而可利用電子掃描獲得有機體內部的截面圖像。本實施例之包含高頻超音波壓電元件的高頻超音波探頭與以往的超音波探頭同樣,在探頭本體上從基端側向前端側依
次配設有基材(backing material)、本實施例之壓電元件、聲匹配層(acoustic matching layer)和聲透鏡(聲透鏡)而構成。但是,本實施例之高頻超音波探頭中,基材和聲匹配層不是必要結構。
For convenience, FIG. 1 shows that three
另,本實施例中,如上所示,利用具有開口部的遮罩在覆蓋下部電極形成的壓電膜上形成複數個上部電極,但也可以利用具有以陣列狀形成的開口部的遮罩,在下部電極上形成配置成陣列狀的複數個壓電膜,在這些複數個壓電膜上分別形成上部電極。由此,在噴塗壓電膜材料時複數個壓電膜彼此分離,因此無需為了防止壓電元件內的串音(crosstalk)而進行切割(dicing)壓電膜的切斷處理。特別是,由於薄壓電膜的切斷易產生裂痕等而難以進行,因此在這一點上有利。 In addition, in this embodiment, as shown above, a plurality of upper electrodes are formed on the piezoelectric film formed by covering the lower electrode using a mask having openings, but a mask having openings formed in an array may also be used. A plurality of piezoelectric films arranged in an array are formed on the lower electrodes, and upper electrodes are formed on the plurality of piezoelectric films. Thereby, when the piezoelectric film material is sprayed, a plurality of piezoelectric films are separated from each other, so there is no need to perform a cutting process of dicing the piezoelectric film in order to prevent crosstalk in the piezoelectric element. In particular, since the cutting of the thin piezoelectric film is prone to cracks and the like is difficult to perform, it is advantageous in this regard.
本實施方式中,使用平坦的板狀下部電極11製作高頻超音波壓電元件10,但也可以使用表面具有沿長度方向延伸的凹部的板狀下部電極,在其凹部內形成壓電膜和上部電極,從而形成高頻超音波壓電元件。將這種形態的高頻超音波壓電元件作為實施例1的一個變形例,參照圖3進行說明。另,本實施例中,省略與實施例1的相同點的說明,僅對不同點進行詳細說明。另外,圖3是表示除了下部電極具有凹部以外與圖2所示的高頻超音波壓電元件同等的超音波壓電元件的圖,特別表示在其中一個上部電極上沿上部電極的長度方向的截面。即,本變形例之高頻超音波壓電元件中,上部電極沿垂直於圖3紙面的方向排列有複數個。
In this embodiment, a flat plate-shaped
如圖3所示,本變形例之高頻超音波壓電元件20具備表面形成有凹部26的下部電極21。凹部26沿下部電極21的長度方向延伸形成。另外,凹部26的開口的周緣部(下部電極21的表面與凹部26的邊界部)帶有倒角
(rounding)。在下部電極21的凹部26的底面上形成有壓電膜22。壓電膜22沿凹部26的底面形狀形成。在壓電膜22上形成有上部電極25。上部電極25與上述實施例1同樣,沿下部電極21的長度方向、即沿凹部的延伸方向配設有複數個。另,本變形例之高頻超音波壓電元件20除了使用具有凹部26的下部電極21以外,壓電膜22和上部電極25的形成等,可以採用與上述實施例1之高頻超音波壓電元件10同樣的方法進行。
As shown in FIG. 3, the high-frequency ultrasonic
另,本變形例中,也在下部電極上形成有沿凹部的延伸方向排列的複數個壓電膜,成為在這些複數個壓電膜上分別形成上部電極的形態。由此,如上所示,在噴塗壓電膜材料時複數個壓電膜彼此分離,因此無需為了防止壓電元件內的串音而進行壓電膜的切斷等處理。 In addition, in this modification, a plurality of piezoelectric films arranged in the extending direction of the concave portion are also formed on the lower electrode, and an upper electrode is formed on each of the plurality of piezoelectric films. Thus, as described above, when the piezoelectric film material is sprayed, a plurality of piezoelectric films are separated from each other, so there is no need to perform processing such as cutting off the piezoelectric film in order to prevent crosstalk in the piezoelectric element.
本變形例之高頻超音波壓電元件20中,下部電極21的表面形成有與壓電膜22的排列方向並行延伸的凹部26,因此能夠抑制並彙聚從配設在凹部26內的壓電膜22發射的超音波在與凹部26的延伸方向垂直的方向(下部電極21的寬度方向)上的擴散。其結果,該高頻超音波壓電元件20用於超音波探頭時,無需設置聲透鏡。
In the high-frequency ultrasonic
實施例2 Example 2
接著,參照圖4對本發明的實施例2之高頻超音波壓電元件30進行說明。另,本實施例中,省略與上述實施例1及其一個變形例的相同點的說明,僅對不同點進行詳細說明。本實施例之高頻超音波壓電元件30與實施例1之高頻超音波壓電元件10相比較,特別在使用棒狀下部電極31作為下部電極、以及形成單一的壓電膜32和上部電極35方面不同。
Next, a high-frequency ultrasonic
如圖4(a)和(b)所示,本實施例之高頻超音波壓電元件30中,
下部電極31如上所述為棒狀,特別為圓柱形狀。另外,該下部電極31的一個端面形成有具有圓形開口的球缺形(spherical segment shaped)凹部36。凹部36的開口的周緣部(下部電極31的表面與凹部36的邊界部)帶有倒角。例如,下部電極31橫截面的直徑為10mm,凹部36的開口徑為6mm,凹部36的深度為2mm。當然,這些尺寸僅為一例,並不限於此,也可以適當選擇這些尺寸。
As shown in FIGS. 4(a) and (b), in the high-frequency ultrasonic
在下部電極31的凹部36的底面上形成有壓電膜32。壓電膜32沿凹部36的底面形狀形成。本實施例中,與實施例1同樣,可以通過採用噴塗法進行的複合體的塗佈和燒結形成壓電膜32。壓電膜32上形成有上部電極35。上部電極35也沿凹部36的底面形狀形成。本實施例之高頻超音波壓電元件30中,在形成上部電極35之前,不特別形成具有複數個開口部的遮罩層,而是採用蒸鍍法等方法在壓電膜32上形成由單一膜構成的上部電極35。另,雖未圖示,與實施例1同樣,在下部電極31和上部電極35上分別連接有與電源相連的引線。
A
本實施例之高頻超音波壓電元件30中,棒狀下部電極31的端面形成有壓電膜32和上部電極35,因此可將其用於以機械掃描的方式使用的單振子(single vibrator)型超音波探頭。另,本實施例之包含高頻超音波壓電元件30的高頻超音波探頭可為與上述實施例1同樣的結構。另外,本實施例之高頻超音波壓電元件30中,在形成於棒狀下部電極31端面的凹部36內形成有壓電膜32和上部電極35,因此從壓電膜32發射的超音波被匯聚而不會從下部電極31的軸向向外側擴散。其結果,該高頻超音波壓電元件30用於超音波探頭時,無需設置聲透鏡。
In the high-frequency ultrasonic
如上所述,根據本發明所述的高頻超音波壓電元件、其製造方法、以及包含該高頻超音波壓電元件的高頻超音波探頭,採用噴塗法在下部電極上塗佈含有溶膠-凝膠溶液和壓電粉末的複合體,因此可以簡便地得到極薄的壓電膜,其結果能夠收發更高頻率的超音波,能夠得到可獲得更高清晰度的圖像的高頻超音波探頭。 As described above, according to the high-frequency ultrasonic piezoelectric element of the present invention, its manufacturing method, and the high-frequency ultrasonic probe including the high-frequency ultrasonic piezoelectric element, the lower electrode is coated with the sol-gel solution The composite of electropowder can easily obtain an extremely thin piezoelectric film, and as a result, can transmit and receive ultrasonic waves of higher frequencies, and can obtain a high-frequency ultrasonic probe capable of obtaining higher-definition images.
本發明之實施例並不限定於上述實施例,可於不脫離本發明之主旨之範圍內進行各種變更。 The embodiments of the present invention are not limited to the above-mentioned embodiments, and various changes can be made without departing from the gist of the present invention.
10‧‧‧高頻超音波壓電元件 10‧‧‧High frequency ultrasonic piezoelectric element
11‧‧‧下部電極 11‧‧‧Lower electrode
12‧‧‧壓電膜 12‧‧‧ Piezo film
13‧‧‧遮罩層 13‧‧‧Mask layer
14‧‧‧開口部 14‧‧‧ opening
15‧‧‧上部電極 15‧‧‧Upper electrode
Claims (13)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP2015-126268 | 2015-06-24 | ||
| JP2015126268A JP6122066B2 (en) | 2015-06-24 | 2015-06-24 | High frequency ultrasonic piezoelectric element, method for manufacturing the same, and high frequency ultrasonic probe including the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201705560A TW201705560A (en) | 2017-02-01 |
| TWI693731B true TWI693731B (en) | 2020-05-11 |
Family
ID=57584920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105119414A TWI693731B (en) | 2015-06-24 | 2016-06-21 | High-frequency ultrasound piezoelectric element, manufacturing method thereof and the high-frequency ultrasound probe comprising the high-frequency ultrasound piezoelectric element |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6122066B2 (en) |
| TW (1) | TWI693731B (en) |
| WO (1) | WO2016208425A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101965171B1 (en) * | 2018-08-24 | 2019-08-13 | (주)비티비엘 | Method of manufacturing ultrasonic sensor |
| WO2023140166A1 (en) * | 2022-01-19 | 2023-07-27 | 株式会社Cast | Ultrasonic probe and ultrasonic probe manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012011024A (en) * | 2010-07-01 | 2012-01-19 | Konica Minolta Medical & Graphic Inc | Ultrasonic probe and ultrasonic diagnostic apparatus |
| JP2013168573A (en) * | 2012-02-16 | 2013-08-29 | Mitsubishi Heavy Ind Ltd | Process of manufacturing supersonic thickness sensor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH071920Y2 (en) * | 1988-05-10 | 1995-01-18 | 東レ株式会社 | Ultrasonic transducer |
| JP2002008939A (en) * | 2000-04-13 | 2002-01-11 | Fujitsu Ltd | Method of manufacturing ceramic body by selective coating |
| JP4759117B2 (en) * | 2000-06-22 | 2011-08-31 | 日本特殊陶業株式会社 | SUBSTRATE WITH METAL OXIDE FILM AND METHOD FOR PRODUCING SUBSTRATE WITH METAL OXIDE FILM |
| JP2004111835A (en) * | 2002-09-20 | 2004-04-08 | Canon Inc | Method for manufacturing piezoelectric element, piezoelectric element, and ink jet recording head |
| JP2005327919A (en) * | 2004-05-14 | 2005-11-24 | Seiko Epson Corp | Device manufacturing method, device, electro-optical element, and printer |
| US7449821B2 (en) * | 2005-03-02 | 2008-11-11 | Research Triangle Institute | Piezoelectric micromachined ultrasonic transducer with air-backed cavities |
| JP5540361B2 (en) * | 2011-06-07 | 2014-07-02 | 日立Geニュークリア・エナジー株式会社 | Ultrasonic sensor and manufacturing method thereof |
| JP2013207155A (en) * | 2012-03-29 | 2013-10-07 | Mitsubishi Materials Corp | Ferroelectric thin film manufacturing method |
| JP6132337B2 (en) * | 2013-04-24 | 2017-05-24 | 国立大学法人電気通信大学 | Ultrasonic diagnostic apparatus and ultrasonic image construction method |
-
2015
- 2015-06-24 JP JP2015126268A patent/JP6122066B2/en active Active
-
2016
- 2016-06-10 WO PCT/JP2016/067395 patent/WO2016208425A1/en not_active Ceased
- 2016-06-21 TW TW105119414A patent/TWI693731B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012011024A (en) * | 2010-07-01 | 2012-01-19 | Konica Minolta Medical & Graphic Inc | Ultrasonic probe and ultrasonic diagnostic apparatus |
| JP2013168573A (en) * | 2012-02-16 | 2013-08-29 | Mitsubishi Heavy Ind Ltd | Process of manufacturing supersonic thickness sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016208425A1 (en) | 2016-12-29 |
| TW201705560A (en) | 2017-02-01 |
| JP6122066B2 (en) | 2017-04-26 |
| JP2017011144A (en) | 2017-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10864553B2 (en) | Piezoelectric transducers and methods of making and using the same | |
| US9812634B2 (en) | Method of making thick film transducer arrays | |
| US7449821B2 (en) | Piezoelectric micromachined ultrasonic transducer with air-backed cavities | |
| JP2000050391A (en) | Ultrasonic transducer and its manufacture | |
| JPH07322396A (en) | Acoustic wave transmitter-receiver | |
| CN1863485A (en) | Ultrasonic probe, ultrasonic imaging device, and ultrasonic imaging method | |
| Tipsawat et al. | 32 element piezoelectric micromachined ultrasound transducer (PMUT) phased array for neuromodulation | |
| TWI693731B (en) | High-frequency ultrasound piezoelectric element, manufacturing method thereof and the high-frequency ultrasound probe comprising the high-frequency ultrasound piezoelectric element | |
| JP2000028595A (en) | Manufacture of piezoelectric structure and combined piezoelectric vibrator | |
| CN102205311B (en) | Short range ultrasonic device with broadbeam ultrasonic transducers | |
| CN107068849B (en) | Piezoelectric element, method for forming piezoelectric element, and ultrasonic device | |
| Zhao et al. | Broadband and high-pressure output pMUT array based on lead-free KNN thin film | |
| KR102000689B1 (en) | A centrifugal packing apparatus and a manufacturing method of a piezoelectric sensor and a piezoelectric sensor manufactured thereby or an ultrasonic sensor containing the same | |
| JP2007158467A (en) | Ultrasonic probe and manufacturing method thereof | |
| US12486159B2 (en) | Micro-machined ultrasound transducers with insulation layer and methods of manufacture | |
| Pedersen et al. | Fabrication of high-frequency pMUT arrays on silicon substrates | |
| JP2000307162A (en) | Piezoelectric structure, composite piezoelectric vibrator and manufacture thereof | |
| JP2024528548A (en) | Micromachined ultrasonic transducer with insulating layer and method of manufacture - Patents.com | |
| JP2022076783A5 (en) | ||
| JP7666048B2 (en) | Electromechanical conversion element, ultrasonic transducer, ultrasonic probe, ultrasonic diagnostic device | |
| TW202200967A (en) | Method for making array ultrasonic sensor and array ultrasonic sensor | |
| JP2003174698A (en) | Composite piezoelectric body and method of manufacturing the same | |
| JP3171715B2 (en) | Array type ultrasonic probe for high frequency | |
| JP3101461B2 (en) | Ultrasonic probe | |
| JP2021153293A (en) | Electromechanical conversion element, ultrasonic transducer, ultrasonic probe, ultrasonic diagnostic device, and method for manufacturing electromechanical conversion element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |