TWI692811B - Laser annealing device, continuous conveying path for laser annealing treatment, laser light irradiation means, and laser annealing treatment method - Google Patents
Laser annealing device, continuous conveying path for laser annealing treatment, laser light irradiation means, and laser annealing treatment method Download PDFInfo
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Abstract
在對被處理體照射雷射光而進行退火處理的雷射退火裝置中,包括:連續搬運路徑,將被處理體在固定的方向上連續地進行搬運;以及雷射光照射手段,對由連續搬運路徑搬運的被處理體照射雷射光,所述連續搬運路徑包括:搬入搬運路徑,向連續搬運路徑的一部分且連續搬運路徑的上游側搬入被處理體並進行搬運;照射區域搬運路徑,為連續搬運路徑的一部分且搬入搬運路徑的下游側,一邊搬運被處理體一邊對被處理體照射雷射光而進行退火處理;及搬出搬運路徑,為連續搬運路徑的一部分且照射區域搬運路徑的下游側,搬運並搬出經過退火處理的被處理體。 The laser annealing apparatus that irradiates the object with laser light and performs annealing treatment includes: a continuous conveying path for continuously conveying the object in a fixed direction; and a laser light irradiation means for the continuous conveying path The object to be transported is irradiated with laser light, and the continuous transport path includes: a transport path to transport and transport the object to a part of the continuous transport path and upstream of the continuous transport path; the transport path to the irradiation area is a continuous transport path Part of and carried into the downstream side of the conveying path, while irradiating the object with laser light while carrying the object to be annealed; and carrying out the conveying path, which is part of the continuous conveying path and the downstream side of the irradiation area conveying path, conveying and Remove the annealed object.
Description
本發明是有關於一種對被處理體照射雷射光而進行退火處理的雷射退火裝置、雷射退火處理用連續搬運路徑、雷射光照射手段以及雷射退火處理方法。 The present invention relates to a laser annealing apparatus that irradiates a laser beam on an object to be annealed, a continuous conveying path for laser annealing, a laser light irradiation means, and a laser annealing method.
在被處理體的退火處理中,例如進行的是如下退火處理,即,對設置於矽基板或玻璃基板等的非晶半導體照射雷射光而進行結晶化,對多晶半導體照射雷射光而進行單晶化,對半導體照射雷射光而進行改質,或者進行雜質的活性化或穩定化。 In the annealing process of the object to be processed, for example, an annealing process is performed in which an amorphous semiconductor provided on a silicon substrate, a glass substrate, or the like is irradiated with laser light to crystallize it, and a polycrystalline semiconductor is irradiated with laser light to perform single irradiation Crystallization irradiates the semiconductor with laser light to modify it, or activates or stabilizes impurities.
另外,退火處理的目的並不限定於所述,包括對被處理體照射雷射光而進行熱處理的所有處理。 In addition, the purpose of the annealing treatment is not limited to the above, and includes all treatments that perform heat treatment by irradiating the object with laser light.
進行退火處理的雷射退火裝置如圖10所示,配置成在處理室30內使平台31能夠沿著掃描方向來回移動(X軸方向)。該例中,可藉由因氮氣而引起的上浮移動使平台31在X方向上移動。而且,處理室30內進行製程時調整為氮氣環境氣體,雷射的照射位置具有密封部34,該密封部34將進一步降低了氧濃度的氮氣向被處理體周邊噴出而進行密封。
As shown in FIG. 10, the laser annealing apparatus that performs the annealing process is arranged in the
退火處理時,如圖11的流程圖所示,在處理室30的附近,準備基板上形成半導體膜而成的板狀被處理體100,使平台
31向設置於處理室30的澆口(gate)35側移動並通過澆口35向處理室30內搬入被處理體100,將被處理體100載置於平台31上。然後,澆口35關閉而將處理室30內維持為氮氣環境氣體。使被處理體100隨平台31的移動而移動,對該被處理體100的半導體膜照射雷射光42,藉此,一邊將雷射光42相對地掃描一邊照射至被處理體100而進行退火處理。而且,亦有時使平台31向與X軸正交的方向(Y軸方向)旋轉或使平台31旋轉(θ軸旋轉),藉此提高被處理體100的處理性。
During the annealing process, as shown in the flowchart of FIG. 11, in the vicinity of the
若對該被處理體100的整個面進行退火處理,則使平台31回到搬入位置,將澆口35打開而自處理室30內取出經退火處理的被處理體100,且使該被處理體100移動至規定位置。然後,在處理室30的附近,準備未經退火處理的新的被處理體100,並重複進行與所述相同的處理。
When the entire surface of the
另外,所述裝置中,對具有一個搬入、搬出的澆口的裝置進行了說明,亦周知有在處理室的相向壁分別設置了搬入用的澆口與搬出用的澆口的裝置(例如參照專利文獻1)。該裝置中,完成了退火處理的半導體基板可自搬出用的澆口中取出。然而,在搬入下一個被處理體時,使平台向搬入側移動,而自搬入側的澆口搬入新的被處理體。 In addition, in the above apparatus, an apparatus having one gate for carrying in and carrying out has been described, and it is also known that a gate for carrying in and a gate for carrying out are provided on opposite walls of the processing chamber (for example, refer to Patent Literature 1). In this device, the semiconductor substrate after the annealing process can be taken out from the gate for carrying out. However, when the next object to be processed is carried in, the platform is moved to the carrying side, and a new object to be processed is carried in from the gate on the carrying side.
如所述般,現有的雷射退火裝置中,自搬入口將一塊被處理體搬入至裝置內,進行退火處理後,自搬出口(一般情況下與搬入口為同一)搬出(批次處理)。 As mentioned above, in the existing laser annealing apparatus, a piece of object to be processed is carried into the apparatus from the self-loading inlet, and after annealing treatment, the self-loading outlet (generally the same as the loading inlet) is carried out (batch processing) .
[專利文獻1]日本專利特開平09-139355號公報 [Patent Document 1] Japanese Patent Laid-Open No. 09-139355
如所述般,被處理體的退火處理是作為針對每個被處理體的批次處理來進行。這是因為被處理體的移動隨保持著被處理體的平台的移動一併進行,且由裝置的構造而決定。該情況下,完成包含搬入.搬出在內的被處理體的處理成為開始下一次被處理體的處理的條件。因此,搬入搬出所花費的時間、在裝置內搬運的時間對於每個被處理體而言為必要時間。 As described above, the annealing process of the object is performed as a batch process for each object. This is because the movement of the object to be processed is accompanied by the movement of the platform holding the object to be processed, and is determined by the structure of the device. In this case, completion includes moving in. The processing of the object to be carried out becomes a condition for starting the next processing of the object. Therefore, the time taken for carrying in and out and the time for carrying in the device are necessary time for each object to be processed.
搬入搬出時間.搬運時間與製程無關,自提高節拍時間(tact time)的觀點而言,則要求儘可能減少。該搬入搬出時間.搬運時間因裝置而不同,為幾十秒以上,需要相對於製程時間的幾分之一的時間,從而成為使生產效率降低的原因。 Time to move in and out. The transfer time has nothing to do with the manufacturing process. From the viewpoint of increasing the tact time, it is required to be reduced as much as possible. The time to move in and out. The conveying time differs depending on the device, and it is tens of seconds or more, and requires a fraction of the time relative to the process time, which causes a reduction in production efficiency.
本申請案發明以所述情況為背景,目的在於提供儘可能減少製程處理時間以外的時間從而可提高生產效率的雷射退火裝置、雷射退火處理用連續搬運路徑、雷射光照射手段以及雷射退火處理方法。 The invention of the present application is based on the circumstances described above, and aims to provide a laser annealing apparatus, a continuous conveying path for laser annealing processing, a laser light irradiation means, and a laser annealing device that can reduce the time other than the process processing time as much as possible to improve production efficiency Annealing treatment method.
本發明的雷射退火裝置中,第1本發明為對被處理體照射雷射光而進行退火處理的雷射退火裝置,其特徵在於包括: 連續搬運路徑,將所述被處理體在固定的方向上連續地搬運;以及雷射光照射手段,對由所述連續搬運路徑搬運的所述被處理體照射所述雷射光。 In the laser annealing apparatus of the present invention, the first invention is a laser annealing apparatus that irradiates a laser beam to an object to be annealed and includes: A continuous conveying path that continuously conveys the object to be processed in a fixed direction; and laser light irradiation means that irradiates the laser light to the object to be processed that is conveyed by the continuous conveying path.
根據所述本發明,可對藉由連續搬運路徑搬運的被處理體照射雷射光而進行退火處理。經處理的被處理體能夠於不對下一個被處理體的搬入作業造成障礙的情況下搬出。 According to the present invention described above, it is possible to irradiate a laser beam on the object to be transported through the continuous transport path to perform annealing treatment. The processed object can be carried out without hindering the carrying-in operation of the next object.
第2本發明的雷射退火裝置如所述第1本發明,其特徵在於包括:處理室,被照射所述雷射光;搬入口,位於所述連續搬運路徑的上游側且設置於所述處理室;以及搬出口,位於所述連續搬運路徑的下游側且設置於所述處理室,所述連續搬運路徑位於自所述搬入口到所述搬出口。 A laser annealing apparatus according to a second aspect of the present invention is the first aspect of the present invention, and includes: a processing chamber irradiated with the laser light; and a loading port located upstream of the continuous transport path and provided in the processing A chamber; and a delivery port, which is located on the downstream side of the continuous transport path and is provided in the processing chamber, and the continuous transport path is located from the transport port to the transport port.
所述本發明中,可藉由與搬入或搬出獨立的處理室內的連續搬運路徑來連續搬運被處理體,被處理體的穩定支持變得容易,且可確保良好的退火性。 In the present invention described above, the object to be processed can be continuously transported by the continuous transport path in the processing chamber independent of the loading or unloading, the stable support of the object to be processed becomes easy, and good annealing property can be ensured.
第3本發明的雷射退火裝置如所述第1本發明或第2本發明,其特徵在於:所述連續搬運路徑包括:照射區域搬運路徑,一邊對所述被處理體照射所述雷射光一邊搬運所述被處理體;以及搬出搬入搬運路徑,位於所述照射區域搬運路徑的上游側及下游側,所述搬出搬入搬運路徑能夠以比所述照射區域搬運路徑中的搬運速度大的搬運速度進行所述被處理體的搬運。 A laser annealing apparatus according to a third aspect of the invention is the first aspect of the invention or the second aspect of the invention, wherein the continuous conveyance path includes an irradiation area conveyance path while irradiating the laser beam to the object While transporting the object to be processed; and a carry-out transport path located on the upstream and downstream sides of the irradiation area transport path, the carry-out transport path can be transported at a higher speed than the transport speed in the irradiation area transport path The object to be processed is transported at a speed.
根據所述本發明,可更高速地進行退火製程以外的搬 運,而可於不受製程時的搬運速度限制的情況下執行搬入、搬出作業,從而作業性得到改善。 According to the present invention described above, it is possible to carry out transportation other than the annealing process at higher speed It can be carried out without being limited by the conveying speed during the manufacturing process, and the workability is improved.
第4本發明的雷射退火裝置如所述第3本發明,其特徵在於:所述搬出搬入搬運路徑中的搬運速度為可變。 A fourth aspect of the laser annealing apparatus of the present invention is the third aspect of the present invention, characterized in that the conveying speed in the carry-out conveying path is variable.
根據所述本發明,因根據搬運時期來改變搬運速度,從而能夠進行更有效率的作業。 According to the present invention described above, since the conveying speed is changed according to the conveying time, more efficient work can be performed.
第5本發明的雷射退火裝置如所述第4本發明,其特徵在於:所述搬出搬入搬運路徑至少能夠以與所述照射區域搬運路徑相同的搬運速度及比所述搬運速度大的搬運速度進行搬運。 A fifth aspect of the laser annealing apparatus of the present invention is the fourth aspect of the present invention, characterized in that the unloading/incoming transport path can transport at least the same transport speed as the transport path of the irradiation area and a transport speed greater than the transport speed Carrying speed.
根據所述本發明,在需要配合製程時的搬運速度的時期能夠以該搬運速度進行搬運,而在其他時期的搬運中能夠進行高速的搬運。 According to the present invention described above, it is possible to carry out the conveying at the conveying speed when it is necessary to match the conveying speed during the manufacturing process, and to perform high-speed conveying during the conveying at other times.
第6本發明的雷射退火裝置如所述第1本發明至第5本發明中的任一本發明,其特徵在於:所述連續搬運路徑包括:支持手段,對所述被處理體進行支持;以及移動手段,使由所述支持手段支持的所述被處理體沿著搬運方向移動。 A sixth aspect of the present invention is the laser annealing apparatus according to any one of the first to fifth aspects of the present invention, wherein the continuous conveying path includes support means for supporting the object to be processed And moving means to move the processed object supported by the supporting means along the conveying direction.
所述本發明中,將支持被處理體的手段與使被處理體移動的手段設為不同的構成,藉此連續搬運時的被處理體的穩定支持及平坦性的確保變得容易,照射雷射光時的焦點深度維持得適當,從而可確保良好的退火性。 In the present invention described above, the means for supporting the object to be processed and the means for moving the object to be processed are configured differently, whereby the stable support of the object to be processed and the guarantee of flatness during continuous transportation are facilitated, and the irradiation of thunder The depth of the focal point when irradiating light is maintained appropriately, so that good annealing property can be ensured.
第7本發明的雷射退火裝置如所述第6本發明,其特徵在於:所述支持手段為藉由氣體的向上方噴出而使所述被處理體 上浮並進行支持的氣體上浮手段。 A seventh aspect of the laser annealing apparatus of the present invention is the sixth aspect of the present invention, characterized in that the support means is to eject the object to be processed by upward gas ejection Means of gas floating and supporting.
根據所述本發明,半導體基板的姿勢控制變得容易,可於不破壞半導體基板的穩定保持的情況下進行移動。 According to the present invention, the posture control of the semiconductor substrate becomes easy, and it can be moved without destroying the stable holding of the semiconductor substrate.
第8本發明的雷射退火裝置如所述第7本發明,其特徵在於:所述氣體上浮手段使用惰性氣體來作為所述氣體。 The laser annealing apparatus of the eighth aspect of the invention is the seventh aspect of the invention, wherein the gas floating means uses an inert gas as the gas.
根據所述本發明,可增加藉由被處理體的氣體上浮及所噴出的惰性氣體來將被處理體的照射區域維持為惰性的環境氣體的效果。 According to the present invention described above, it is possible to increase the effect of maintaining the irradiated area of the object to be an inert ambient gas by the gas floating of the object to be treated and the inert gas ejected.
第9本發明的雷射退火裝置如所述第6本發明至第8本發明中的任一本發明,其特徵在於:所述移動手段在將所述被處理體向所述連續搬運路徑的下游側搬運後,能夠復位移動至所述連續搬運路徑的上游側。 A laser annealing apparatus according to a ninth aspect of the present invention is any one of the sixth aspect to the eighth aspect of the invention, characterized in that the moving means moves the object to be processed toward the continuous conveyance path After the downstream side is transported, it can be moved back to the upstream side of the continuous transport path.
根據所述本發明,藉由移動手段進行復位移動,可進行被處理體的連續搬運。此時,藉由使移動手段的復位移動比被處理體的搬運速度大,而可減小被處理體間的間隔從而提高生產效率。 According to the present invention described above, by performing the reset movement by the moving means, continuous conveyance of the object to be processed can be performed. At this time, by making the return movement of the moving means higher than the conveying speed of the object to be processed, the interval between the objects to be processed can be reduced to improve the production efficiency.
另外,移動手段的復位移動可為呈環狀移動而復位者,而且,亦可為藉由來回移動而移動者,移動形態不作特別限定。 In addition, the resetting movement of the moving means may be a ring-shaped movement and a resetting movement, and may also be a movement by a back-and-forth movement. The movement form is not particularly limited.
第10本發明的雷射退火裝置如所述第1本發明至第9本發明中的任一本發明,其特徵在於:包括局部氣體密封部,所述局部氣體密封部噴射至少覆蓋所述連續搬運路徑中被照射所述雷射光的所述被處理體的表面區域的局部氣體。 The laser annealing apparatus of the tenth invention is any one of the first to ninth inventions described above, characterized in that it includes a partial gas seal portion, and the partial gas seal portion sprays to cover at least the continuous Local gas in the surface area of the object to be irradiated with the laser light in the conveyance path.
第11本發明的雷射退火裝置如所述第10本發明,其特徵在於:所述局部氣體為惰性氣體。 The laser annealing apparatus of the eleventh aspect of the invention is the tenth aspect of the invention, wherein the local gas is an inert gas.
根據所述各本發明,可使被照射雷射光的區域或其周圍處於潔淨的環境,從而容易對處理室整體進行環境控制。 According to the present inventions described above, the area irradiated with laser light or its surroundings can be kept in a clean environment, so that it is easy to control the environment of the entire processing chamber.
第12本發明的雷射退火裝置如所述第10本發明或第11本發明,其特徵在於:除所述局部氣體外的環境氣體為空氣。 The twelfth invention of the laser annealing apparatus is the tenth invention or the eleventh invention, characterized in that the ambient gas other than the local gas is air.
根據所述本發明,可容易且廉價地調整環境氣體。 According to the present invention, the environmental gas can be adjusted easily and inexpensively.
第13本發明的雷射退火處理用連續搬運路徑一邊將被處理體在固定的方向上連續地搬運一邊進行雷射退火處理,其特徵在於包括:搬入搬運路徑,向所述連續搬運路徑的一部分且連續搬運路徑的上游側,搬入並搬運被處理體;照射區域搬運路徑,為所述連續搬運路徑的一部分且所述搬入搬運路徑的下游側,一邊搬運經過所述搬入搬運路徑的所述被處理體一邊對所述被處理體照射雷射光而進行退火處理;以及搬出搬運路徑,為所述連續搬運路徑的一部分且所述照射區域搬運路徑的下游側,搬運並搬出經過所述退火處理的所述被處理體。 A thirteenth continuous transport path for laser annealing of the present invention performs laser annealing while continuously transporting the object to be processed in a fixed direction, and is characterized by including a transport path and a part of the continuous transport path The upstream side of the continuous transport path carries and transports the object to be processed; the irradiation area transport path is a part of the continuous transport path and is downstream of the transport path, while transporting the object passing through the transport path The processing body irradiates the object to be processed with laser light to perform annealing treatment; and the carrying out conveyance path is a part of the continuous conveying path and is downstream of the irradiation area conveying path, conveying and carrying out the annealed The object to be processed.
第14本發明的雷射退火處理用連續搬運路徑如所述第13本發明,其特徵在於:能夠使所述搬入搬運路徑及所述搬出搬運路徑中的搬運速度比所述照射區域搬運路徑中的搬運速度大地搬運所述被處理體。 The 14th invention continuous conveying path for laser annealing is as the 13th invention described above, characterized in that the conveying speed in the carrying-in conveying path and the carrying-out conveying path can be made higher than in the irradiation area carrying path The conveying speed of the conveying the object to be processed.
第15本發明的雷射退火處理用連續搬運路徑如所述第13本發明或第14本發明,其特徵在於:所述連續搬運路徑在至少所述照射區域搬運路徑,一邊藉由氣體的向上方噴出使所述被處理體上浮一邊沿搬運方向移動。 The fifteenth invention of the continuous transport path for laser annealing is as the thirteenth invention or the fourteenth invention, characterized in that the continuous transport path is in at least the irradiation area transport path, while the gas The side ejection causes the object to be treated to float while moving in the conveying direction.
第16本發明的雷射光照射手段的特徵在於包括:雷射光源,輸出雷射光;以及光學系統構件,對藉由連續搬運路徑連續地搬運並到達所述連續搬運路徑的照射區域的被處理體,導引所述雷射光,相對地進行掃描並加以照射。 The laser light irradiation means of the 16th invention is characterized by including: a laser light source that outputs laser light; and an optical system member that continuously transports the object to be processed through the continuous transport path and reaches the irradiation area of the continuous transport path , Guide the laser light, scan and illuminate it relatively.
第17本發明的雷射退火處理方法一邊藉由將被處理體在固定的方向上連續地搬運的連續搬運路徑搬運所述被處理體,一邊對所述被處理體照射雷射光而進行退火處理,所述雷射退火處理方法的特徵在於包括:搬入搬運步驟,在所述連續搬運路徑的一部分且連續搬運路徑的上游側,搬入並搬運被處理體;退火處理步驟,在所述連續搬運路徑的一部分且進行了所述搬入搬運步驟的連續搬運路徑的下游側,一邊搬運所述被處理體一邊照射所述雷射光而進行退火處理;以及搬出搬運步驟,在所述連續搬運路徑的一部分且進行了所述退火處理的連續搬運路徑的下游側,搬運並搬出所述被處理體。 The laser annealing treatment method of the 17th invention irradiates laser light to the object to be annealed while conveying the object to be processed through a continuous conveying path that continuously conveys the object to be fixed in a fixed direction The laser annealing treatment method is characterized in that it includes: a carrying-in and conveying step in which a part to be processed is carried in and conveying on a part of the continuous conveying path and on the upstream side of the continuous conveying path; and an annealing processing step in the continuous conveying path Part of the continuous conveying path downstream of the carry-in conveying step, the laser beam is irradiated while carrying the object to be annealed; and the carry-out conveying step is performed on a part of the continuous conveying path and On the downstream side of the continuous conveying path where the annealing process has been performed, the object to be processed is conveyed and carried out.
第18本發明的雷射退火處理方法如所述第17本發明,其特徵在於:能夠使所述搬入搬運步驟及所述搬出搬運步驟中的所述連續搬運路徑的搬運速度比所述退火處理步驟中的所述連續 搬運路徑的搬運速度大地進行搬運。 The laser annealing treatment method of the eighteenth present invention is as the seventeenth present invention, characterized in that the continuous conveying path in the carry-in and conveying steps and the carry-out and conveying steps can be made faster than the annealing process The continuous in step The transportation speed of the transportation path is large.
第19本發明的雷射退火處理方法如所述第17本發明或第18本發明,其特徵在於:所述各步驟中的至少所述退火處理步驟中,一邊藉由氣體的向上方噴出使所述被處理體上浮一邊沿搬運方向移動。 The laser annealing treatment method of the nineteenth invention is as described in the seventeenth invention or the eighteenth invention, characterized in that at least one of the annealing steps in each of the steps is performed by gas being sprayed upward The to-be-processed object floats while moving in the conveying direction.
根據所述本發明,可極力減小被處理體的退火處理製程以外的時間,從而可大幅提高生產性。 According to the present invention, the time outside the annealing process of the object can be reduced as much as possible, and the productivity can be greatly improved.
1:處理室(雷射退火裝置) 1: Processing room (laser annealing device)
1a:搬入口 1a: moving entrance
1b:搬出口 1b: moving out
2、2d、200a、200b:連續搬運路徑 2. 2d, 200a, 200b: continuous transportation path
2a:搬入搬運路徑 2a: moving into the transportation path
2b:照射區域搬運路徑 2b: Transportation path of irradiation area
2c:搬出搬運路徑 2c: Moving out of the transportation path
3、3a、3b:局部氣體密封部 3. 3a, 3b: local gas seal
4、5:空氣送出部 4, 5: Air delivery section
10:搬入室 10: Move into the room
11:收容室 11: containment room
12:清洗部 12: Cleaning Department
13:搬入裝置 13: moving into the device
14:搬出裝置 14: Remove the device
15:搬出室 15: Move out of the room
20:氣體上浮裝置 20: Gas floating device
20a:旋轉輥 20a: rotating roller
21、25:滑動部 21, 25: sliding part
22、26:升降部 22, 26: Lifting Department
23、27:吸附部 23, 27: adsorption section
28、29:導件 28, 29: guide
30:處理室 30: processing room
31:平台 31: Platform
34:密封部 34: Sealing part
35:澆口 35: Gate
40:雷射光源 40: Laser light source
41:光學系統構件 41: Optical system components
42、42a、42b:雷射光 42, 42a, 42b: laser light
100、100a、100b、100c、100d:被處理體 100, 100a, 100b, 100c, 100d: body to be processed
S1、S2、S3:基板 S1, S2, S3: substrate
N:N2層 N:N 2 layers
圖1(A)、圖1(B)是表示本發明的一實施形態的雷射退火裝置的概要的正面剖視圖。 1(A) and 1(B) are front sectional views showing the outline of a laser annealing apparatus according to an embodiment of the present invention.
圖2(A)、圖2(B)是本發明的一實施形態的雷射退火裝置的處理室內的平面概要圖(A圖)及將一部分放大的前視圖(B圖)。 2(A) and 2(B) are a schematic plan view (FIG. A) and a partially enlarged front view (FIG. B) of a processing chamber of a laser annealing apparatus according to an embodiment of the present invention.
圖3是本發明的一實施形態的雷射退火裝置的雷射退火處理的流程圖。 3 is a flowchart of the laser annealing process of the laser annealing apparatus according to an embodiment of the present invention.
圖4是詳細表示本發明的一實施形態的雷射退火裝置的吸附部的動作的流程圖。 4 is a flowchart showing in detail the operation of the adsorption unit of the laser annealing apparatus according to an embodiment of the present invention.
圖5是本發明的一實施形態的雷射退火裝置的製程時的立體圖。 5 is a perspective view of a laser annealing apparatus according to an embodiment of the present invention during the manufacturing process.
圖6是表示現有例的動作時的雷射振盪與搬出搬入的時序圖 的圖。 FIG. 6 is a timing chart showing laser oscillation and carrying in and out during operation of the conventional example. Figure.
圖7是表示本發明的一實施形態的動作時的雷射振盪與搬出搬入的時序圖的圖。 7 is a diagram showing a timing chart of laser oscillation and carrying in and carrying out during operation according to an embodiment of the present invention.
圖8是本發明的另一實施形態的製程時的立體圖。 FIG. 8 is a perspective view of another embodiment of the present invention during the manufacturing process.
圖9(A)、圖9(B)是表示本發明的又一實施形態的平面圖及側視圖的圖。 9(A) and 9(B) are a plan view and a side view showing still another embodiment of the present invention.
圖10是說明現有的雷射退火裝置的動作的圖。 10 is a diagram illustrating the operation of a conventional laser annealing apparatus.
圖11是現有的雷射退火裝置的雷射退火處理的流程圖。 11 is a flowchart of a laser annealing process of a conventional laser annealing device.
以下基於隨附圖式說明本發明的一實施形態。在本發明的圖式中,S1、S2、S3表示基板,N表示N2層。 An embodiment of the present invention will be described below based on the accompanying drawings. In the drawings of the present invention, S1, S2, and S3 represent the substrate, and N represents the N 2 layer.
圖1(A)、圖1(B)是表示雷射退火裝置的概要的圖,(A)圖中將處理室放大表示,(B)圖中表示系統整體的概要。本實施形態中,作為被處理體100,以在玻璃基板上形成半導體膜而成者為處理對象。
1(A) and 1(B) are diagrams showing an outline of a laser annealing apparatus, (A) shows an enlarged view of a processing chamber, and (B) shows an outline of the entire system. In this embodiment, as the
處理室1如圖1(A)、圖1(B)所示,具有長方體形狀的壁部,在長度方向的相向壁分別設置著搬入口1a(圖示左側)及搬出口1b(圖示右側)。搬入口1a、搬出口1b可開放,而且,能夠設為可開閉的構成。作為可開閉的構成,亦可設為簡單的密封構造。另外,搬入口與搬出口只要沿著連續搬運路徑的固定的搬運方向而具有即可,則設置位置不限定於特定位置。
As shown in FIG. 1(A) and FIG. 1(B), the
處理室1內,從搬入口1a內側到搬出口1b內側設置著
連續搬運路徑2。連續搬運路徑2上配置著氣體上浮裝置20。氣體上浮裝置20自下方朝向上方噴出氣體,對上方的被處理體100進行上浮支持,相當於本發明的氣體上浮手段,即支持手段。
Inside the
另外,氣體上浮裝置20因具有多個未圖示的噴出位置而可調整被處理體100的姿勢、彎曲等。
In addition, since the
而且,在氣體上浮裝置20的兩側,如圖2(A)、圖2(B)所示,沿著長邊方向配置著導件28、導件29,在導件28、導件29設置著能夠分別沿著導件移動的滑動部21、滑動部25。滑動部21、滑動部25可根據其位置來變更移動速度。滑動部21、滑動部25上設置著長邊方向上可改變位置而能夠上下地調整位置的多個升降部22、升降部26。該例中,各滑動部21、滑動部25中分別具有兩個升降部22、升降部22及升降部26、升降部26。多個升降部22、升降部22或升降部26、升降部26中,亦可改變彼此的上升位置來調整被處理體100的支持狀態。
Furthermore, on both sides of the
升降部22、升降部26上具有吸附部23、吸附部27,對利用氣體上浮裝置20而上浮的被處理體100進行吸附。導件28、滑動部21、升降部22、吸附部23及導件29、滑動部25、升降部26、吸附部27中,該些協同工作而構成本發明的移動手段。
The elevating
所述氣體上浮裝置20與導件28、滑動部21、升降部22、吸附部23及導件29、滑動部25、升降部26、吸附部27構成本發明的連續搬運路徑2。
The
另外,本實施形態中,對連續搬運路徑2跨及處理室1
內而設置的情況進行了說明,而連續搬運路徑2亦可伸長至處理室1外。而且,處理室1並非為本發明中必需者。
In addition, in this embodiment, the continuous conveying
在處理室1的外部,如圖1(A)、圖1(B)所示,具有輸出雷射光的雷射光源40。本發明中,雷射光的種類不作特別限定,且亦可為連續波、脈衝波中的任一者。在雷射光的光路上配置著包含反射鏡、透鏡等的光學系統構件41,該例中將設為線光束(line beam)形狀的雷射光42導入至處理室1內並照射至連續搬運路徑2上的被處理體100。雷射光源40、光學系統構件41構成本發明的雷射光照射手段。
As shown in FIGS. 1(A) and 1(B), the outside of the
另外,連續搬運路徑2中,在搬運時,自被處理體100的搬運方向前端到達雷射光42的照射位置的位置開始,到被處理體100的搬運方向後端即將從雷射光42的照射位置拔出前的位置為止成為照射區域,如圖1(A)、圖1(B)所示,其間的連續搬運路徑2的一部分構成照射區域搬運路徑2b。位於照射區域搬運路徑2b的上游側的連續搬運路徑2的一部分構成搬入搬運路徑2a,位於照射區域搬運路徑2b的下游側的連續搬運路徑2的一部分構成搬出搬運路徑2c。另外,圖1(A)、圖1(B)中,圖示左側的邊界線中,被處理體100的後端側為基準,圖示右側的邊界線中,被處理體100的前端側為基準。另外,照射區域搬運路徑至少包含所述搬運路徑的範圍,亦可將比該範圍大的搬運路徑的範圍作為照射區域搬運路徑。
In addition, in the
在照射區域搬運路徑2b中,被處理體100需要以製程
處理時的搬運速度移動,所述移動手段以與製程處理中的掃描速度相應的搬運速度移動。另外,在可變更雷射光42的照射位置的構成的情況下,移動手段的搬運速度以包含雷射光42的照射位置在內而雷射光42以掃描速度相對移動的方式來決定搬運速度。
In the irradiation
搬入搬運路徑2a及搬出搬運路徑2c中,被處理體100能夠以比照射區域搬運路徑2b高的速度移動,其間能夠使所述移動手段以相對高的速度移動。另外,搬入搬運路徑2a及搬出搬運路徑2c中,在接近照射區域搬運路徑2b的範圍內,為了用於搬運間隔的調整或雷射光的照射等,亦能夠以與照射區域搬運路徑2b相同的速度搬運被處理體100。
In the carrying-in conveying
進而,雷射退火裝置1中,如圖1(B)所示,搬入室10以與處理室1的搬入口1a側連通的方式鄰接於該搬入口1a側,搬入室10的室內可進行密閉。搬入室10中包括:收容室11,收容退火處理前的多個被處理體100;清洗部12,對自收容室11取出的被處理體100進行清洗;以及搬入裝置13,能夠將由清洗部12清洗的被處理體100通過搬入口1a而隔開規定間隔地連續搬入至處理室1。搬入被處理體100時的規定間隔為不與先行的被處理體100重疊且不會在搬入時造成干擾者即可,並不限定於特定的範圍。而且,亦可使半導體基板彼此的規定間隔不同。
Furthermore, in the
所述收容室11的收容方法不作特別限定,利用豎立放置、橫向放置等適當的方法收容被處理體100即可。清洗部可為批次式、單片式中的任一者,清洗方法可為濕式清洗、乾式清洗或該些的
複合清洗的任一者。
The storage method of the
進而,搬出室15鄰接於處理室1的搬出口1b側,搬出室15的室內與搬出口1b連通且可密閉。
Furthermore, the unloading
搬出室15內設置著搬出裝置14,該搬出裝置14自處理室1的連續搬運路徑連續地取出退火處理完畢的被處理體100。
A carrying-out
而且,處理室1內,從處理室1外部提取空氣並向處理室1內噴出空氣的空氣送出部4、空氣送出部5分別與搬入口1a、搬出口1b接近而設置。
Further, in the
進而,在被照射雷射光42的區域的上方具有局部氣體密封部3,該局部氣體密封部3向下方噴射覆蓋雷射光照射區域及其周圍的局部氣體。另外,局部氣體的噴射區域能夠以至少包含被照射雷射光的區域為前提,來規定適當的範圍。
Furthermore, a
另外,該例中,使用惰性氣體,例如氮氣來作為局部氣體。而且,雷射光42通過局部氣體密封部3內而照射至被處理體100。
In addition, in this example, an inert gas such as nitrogen is used as the local gas. Furthermore, the
而且,氣體上浮裝置20中,理想的是至少在與局部氣體密封部3同等的範圍內,使用惰性氣體,例如氮氣來作為上浮氣體。在該範圍以外,亦可使用廉價的空氣等來作為上浮氣體。
In addition, in the
接下來,一邊參照圖1(A)、圖1(B)至圖4一邊對使用了所述雷射退火裝置的雷射退火處理進行說明。 Next, the laser annealing process using the laser annealing apparatus will be described with reference to FIGS. 1(A) and 1(B) to FIG. 4.
收容室11內收容並可供給多個被處理體100。另外,收容室11中亦可在雷射退火處理中補充新的被處理體100。另外,圖3、
圖4中為了對依次搬入至處理室的被處理體加以區分,而按照搬入順序由被處理體100a、被處理體100b、被處理體100c來進行表示。
The
收容室11內的被處理體100在清洗部12中,藉由批次式或單片式進行濕式或乾式清洗。處理室1中,在連續搬運路徑2中,利用氣體上浮裝置20進行氣體噴射或氣體噴射的準備,使滑動部21、滑動部25中的至少一者沿著導件28或導件29向搬入口1a側移動。
The to-
另一方面,雷射光源40中,輸出雷射光,藉由光學系統構件41生成線光束。待機狀態下,雷射光42藉由光學系統構件41中的一部分構件而不向處理室1內照射光束,並退避至處理室外的適宜部位。
On the other hand, the
首先,利用圖3對被處理體100a、被處理體100b的移動進行簡單說明。
First, the movement of the
搬入室10中,將由清洗部12清洗的被處理體100a自搬入口1a搬入至處理室1內,並藉由連續搬運路徑2的搬入搬運路徑2a相對高速地進行搬運。當被處理體100到達雷射光42的照射區域時,藉由連續搬運路徑2的照射區域搬運路徑2b一邊將被處理體100以規定的搬運速度(相對低的速度)進行搬運,一邊將導入至處理室1內的雷射光42照射至表面。因被處理體100a通過照射區域,而對被處理體100a相對地掃描雷射光42,從而被處理體100a的規定的區域受到退火處理。經退火處理的被處理體
100脫離照射區域搬運路徑2b,而藉由連續搬運路徑2的搬出搬運路徑2c相對高速地搬運至搬出口1b附近為止,並藉由搬出裝置14立即自處理室1搬出至搬出室15。
In the carrying-in
而且,所述製程時,將下一個被處理體100b在被處理體100a的退火處理中搬入至處理室1內並由搬入搬運路徑2a高速地進行搬運,與被處理體100a隔開規定間隔地到達照射區域搬運路徑2b。被處理體100b由照射區域搬運路徑2b而與所述同樣地以規定的速度一邊搬運一邊進行退火處理。當退火處理結束時,與所述同樣地,通過搬出搬運路徑2c而相對高速地搬運,並藉由搬出裝置14自處理室1搬出至搬出室15。圖中雖未表示,但以後均能夠同樣地將新的半導體基板搬入至處理室1內而進行連續的處理。
In the above process, the
接下來,基於圖2(A)、圖2(B)及圖4對連續搬運路徑2的動作進行說明。
Next, the operation of the
初始狀態下,滑動部21、滑動部25沿著導件28、導件29而位於搬入口1a側的初始位置。說明導件28側的移動手段針對被處理體100a進行動作的情況。
In the initial state, the sliding
當被處理體100a被搬入至處理室1時,升降部22上升至適宜位置,並藉由吸附部23對被處理體100a的背面側進行吸附。滑動部21中,當由吸附部23吸附被處理體100a時,以預定的速度向搬出口1b側移動。藉此,被處理體100a沿著連續搬運路徑2移動。就移動速度而言,在搬入搬運路徑2a及搬出搬運路
徑2c中以相對高的速度移動,而在照射區域搬運路徑2b,則根據製程時的掃描速度以相對低的速度移動。
When the to-
被處理體100a由照射區域搬運路徑2b一邊相對地掃描雷射光42一邊進行照射,從而被處理體100a的必要區域受到退火處理。在退火處理後的被處理體100a藉由連續搬運路徑2而搬運至搬出口1b附近時,解除吸附部23的吸附,使升降部22下降。被處理體100a如所述般藉由搬出裝置14立即自處理室1搬出至搬出室15。
The
此時,滑動部21沿著導件28藉由來回移動而復位移動至搬入口1a側的初始位置,以用於之後的半導體基板的保持。就復位移動時的移動速度而言,以比搬運被處理體時的速度高的速度移動而用於下一個被處理體。
At this time, the
另外,在進行該些一連串動作時,當下一個被處理體100b被搬入至處理室1內時,利用氣體上浮裝置20而空氣上浮,並且使滑動部25上的升降部26以適當高度升降,藉由吸附部27自背面側吸附被處理體100b,成為懸臂狀態。滑動部25中,當藉由吸附部27進行被處理體100b的吸附時,與所述同樣地以預定的速度向搬出口1b側移動。藉此被處理體100b沿著連續搬運路徑2移動,並藉由雷射光42進行退火處理。經退火處理的被處理體100b藉由連續搬運路徑2而搬運至搬出口1b附近,解除吸附部27的吸附後,使升降部26下降而藉由搬出裝置14立即自處理室1搬出至搬出室15。
In addition, during these series of operations, when the next object to be processed 100b is carried into the
滑動部25沿著導件29藉由來回移動而復位移動至搬入口1a側的初始位置,以用於之後的被處理體的保持。就復位移動時的移動速度而言,以比搬運被處理體時的速度高的速度移動而用於下一個被處理體。
The sliding
下一個被處理體在被搬入至處理室1內後,由滑動部21側的吸附部23吸附而向搬出口1b側搬運。藉由重複所述程序,而如圖5所示,可將被處理體100a、被處理體100b連續地搬入至處理室內,進行退火處理、搬出處理。
After the next object to be processed is carried into the
所述各動作可藉由未圖示的控制部而控制,且可一邊使搬入裝置、搬出裝置及移動手段同步一邊藉由控制部來控制動作。控制部包含中央處理單元(central processing unit,CPU)、使該CPU執行規定動作的程式、記憶動作參數的記憶部等。 The above operations can be controlled by a control unit (not shown), and the operations can be controlled by the control unit while synchronizing the carrying-in device, the carrying-out device, and the moving means. The control unit includes a central processing unit (central processing unit, CPU), a program that causes the CPU to perform a predetermined operation, and a memory unit that stores operation parameters.
先前,相對於退火處理,搬入搬出半導體基板所需的時間為退火處理時間的約1/4。本件實施形態中,搬入、搬出所需的時間大致為零,藉此生產性提高約25%。 Previously, the time required for carrying in and out the semiconductor substrate relative to the annealing process was about 1/4 of the annealing process time. In this embodiment, the time required for carrying in and carrying out is substantially zero, thereby increasing productivity by about 25%.
如所述般,可設置多個移動手段,且使各自在不同的時期進行移動動作,藉此無須使多個被處理體待機從而可有效率地進行搬運。 As described above, it is possible to provide a plurality of moving means and make each move at a different time, whereby it is not necessary to wait for a plurality of objects to be processed, and it is possible to carry them efficiently.
本申請案發明中,可如所述般進行有效率的處理,即便在雷射光的振盪動作中亦具有效率提高的效果。 In the invention of the present application, efficient processing can be performed as described above, and it has an effect of improving efficiency even in the oscillation operation of laser light.
圖6是表示現有裝置的雷射光源的振盪動作的圖。在照射製程期間,需要對處理室內進行半導體基板的搬入處理及搬出處理。 FIG. 6 is a diagram showing the oscillation operation of the laser light source of the conventional device. During the irradiation process, the semiconductor substrate needs to be carried in and out of the processing chamber.
為了在雷射振盪中加以穩定的運用,而需要維持連續的振盪狀態。因此,於搬運時間等無助於生產的時間內雷射亦需要持續振盪。因此,雷射退火裝置中,持續進行雷射振盪,且在必要時將雷射光42通過光學系統構件而導入至處理室1內。另一方面,內封於準分子雷射等的氣體會因雷射的振盪次數而劣化,故需要定期地更換氣體。
In order to use the laser oscillation stably, it is necessary to maintain a continuous oscillation state. Therefore, the laser also needs to continue to oscillate during the transportation time and other times that are not conducive to production. Therefore, in the laser annealing apparatus, laser oscillation is continuously performed, and the
圖6的現有例中,照射製程期間需要搬入、搬出的時間,因其間亦持續進行雷射光源的振盪,故無用的振盪增多,而生產性差。 In the conventional example of FIG. 6, the time required for carrying in and carrying out during the irradiation process is continuously oscillated by the laser light source during this period, so unnecessary vibration increases and the productivity is poor.
圖7表示本實施形態的時序圖的圖,且表示對三個基板進行處理的示例,半導體基板的搬出、搬入幾乎能夠在其他半導體基板的照射製程中進行,從而可極力減小無用的振盪時間而提高生產性。 7 is a diagram showing a timing chart of the present embodiment, and shows an example of processing three substrates. The semiconductor substrate can be carried out and carried out almost in the irradiation process of other semiconductor substrates, thereby reducing unnecessary oscillation time as much as possible And improve productivity.
另外,所述各實施形態中,對雷射光的長邊寬度為基板一個邊長的情況進行了說明。因此,藉由使半導體基板向一個方向移動,而可相對地掃描雷射光並完成退火處理。然而,亦有雷射光長邊寬度未達到基板的一個邊長的情況。 In addition, in the above embodiments, the case where the long side width of the laser light is one side of the substrate has been described. Therefore, by moving the semiconductor substrate in one direction, the laser light can be relatively scanned and the annealing process can be completed. However, there are also cases where the long side width of the laser light does not reach one side length of the substrate.
以下,根據圖8對雷射光長邊寬度為基板的1/2邊長的情況進行說明。 Hereinafter, a case where the long side width of the laser light is 1/2 the side length of the substrate will be described based on FIG. 8.
處理室1內,並列設置著向一個方向搬運半導體基板的連續搬運路徑200a、及向與所述方向相反的方向搬運半導體基板的連續搬運路徑200b。該例中,在連續搬運路徑200a的搬運方向
上游側具有搬入口1a。連續搬運路徑200b的搬運方向上游側位於連續搬運路徑200a的搬運方向下游側,搬出口1b位於連續搬運路徑200b的搬運方向下游側。在連續搬運路徑200a的搬運方向下游側與連續搬運路徑200b的搬運方向上游側之間,具有跨越兩搬運路徑而搬運被處理體的連續搬運路徑。另外,本實施形態中,為了將搬入至處理室1的被處理體100加以區分,而依序表示為被處理體100a、被處理體100b、被處理體100c、被處理體100d。
In the
在連續搬運路徑200a上,以所搬入的被處理體100的搬運方向為基準而向左側照射雷射光42a。雷射光42a的照射區域上方設置著局部氣體密封部3a,該局部氣體密封部3a對雷射光42a的照射區域及其周圍噴射氮氣等而進行密封。
On the
連續搬運路徑200b上,以所搬入的被處理體100的搬運方向為基準而向右側照射雷射光42b。雷射光42b的照射區域上方設置著局部氣體密封部3b,該局部氣體密封部3b對雷射光42b的照射區域及其周圍噴射氮氣等並進行密封。
On the
圖中,藉由未圖示的搬入裝置而最初搬入至搬入口1a的被處理體100a,與圖中的被處理體100d同樣地,由連續搬運路徑200a搬運,且一邊由局部氣體密封部3a噴射局部氣體並進行密封,一邊被照射雷射光42a,搬運方向左側受到退火處理。被處理體100a與圖中的被處理體100c同樣地到達搬運路徑2a的搬運方向下游端,與圖中的被處理體100b同樣地,向連續搬運路徑200b的搬運方向上游側搬運,且藉由連續搬運路徑200b向下游側
搬運。
In the figure, the to-
沿連續搬運路徑200b搬運的被處理體100a,一邊由局部氣體密封部3b噴射局部氣體而雷射光照射區域及其周邊被密封,一邊對被處理體100a照射雷射光42b,搬運方向右側受到退火處理。藉由連續搬運路徑200a上的退火處理與連續搬運路徑200b上的退火處理,被處理體100a的所需區域均受到退火處理。
The object to be processed 100a transported along the
被處理體100a如圖8所示,到達連續搬運路徑200b的搬運方向下游端,利用未圖示的搬出裝置通過搬出口1b而搬出至處理室1外。
As shown in FIG. 8, the object to be processed 100a reaches the downstream end in the conveying direction of the continuous conveying
利用所述程序,依序搬入、搬運被處理體100b、被處理體100c、被處理體100d,並連續地進行退火處理。即便在雷射光長邊寬度未達到半導體基板的一個邊長的情況下,亦可跨及基板的整個寬度進行退火處理。 With the above program, the object to be processed 100b, the object to be processed 100c, and the object to be processed 100d are sequentially carried in and carried out, and the annealing treatment is continuously performed. Even in the case where the long side width of the laser light does not reach one side length of the semiconductor substrate, annealing treatment can be performed across the entire width of the substrate.
另外,在連續搬運路徑為兩個搬運路徑且未對基板的一個邊長處理完的情況下,可增加連續搬運路徑的並行數量而同樣地加以對應。 In addition, when the continuous conveyance path is two conveyance paths and one side of the substrate is not processed, the parallel number of the continuous conveyance paths can be increased to correspond to the same.
另外,所述實施形態中,未改變被處理體的朝向而使連續搬運路徑200a架在連續搬運路徑200b上,亦可改變被處理體的朝向來進行搬運。
In addition, in the above embodiment, the continuous conveying
所述各實施形態中,已對連續搬運路徑跨及全長而具備氣體懸浮裝置的情況進行了說明,但本發明並非必须具備氣體上浮裝置,而且,亦可僅在連續搬運路徑的一部分,例如照射區域
搬運路徑2b進行氣體上浮。
In each of the above-mentioned embodiments, the case where the continuous conveying path spans the entire length and the gas levitation device is described has been described, but the present invention does not necessarily need to have a gas floating device, and it may be only a part of the continuous conveying path, for example, irradiation area
The conveying
圖9(A)、圖9(B)表示本實施形態的連續搬運路徑2d。搬入搬運路徑2a及搬出搬運路徑2c中,例如,將在與搬運方向正交的方向上具有旋轉軸的遊動狀態的旋轉輥20a在搬運方向上隔開間隔而配置,可對被處理體進行支持。因此,旋轉輥20a構成本發明的支持手段。旋轉輥20a亦可進行旋轉驅動,但理想的是另外具有所述移動手段。
9(A) and 9(B) show the continuous conveying
搬入至搬入搬運路徑2a的被處理體由旋轉輥20a支持,且藉由移動手段在搬運方向上移動。被處理體在到達照射區域搬運路徑2b時由氣體上浮裝置20支持,然後,在到達搬出搬運路徑2c時,與搬入搬運路徑2a同樣地,一邊由旋轉輥20a支持,一邊由移動手段搬運。
The object to be transported into the
關於被處理體的支持,除照射區域搬運路徑2b以外,不要求如照射區域搬運路徑2b般的穩定的支持或平坦性,因而亦可由與照射區域搬運路徑2b的被處理體的支持不同的構成來支持被處理體。
The support of the object to be processed does not require stable support or flatness like the irradiation
以上,基於所述實施形態對本發明進行了說明,但只要不脫離本發明的範圍則可進行適當的變更。 The present invention has been described above based on the above-mentioned embodiments, but appropriate changes can be made as long as they do not depart from the scope of the present invention.
1:處理室(雷射退火裝置) 1: Processing room (laser annealing device)
1a:搬入口 1a: moving entrance
1b:搬出口 1b: moving out
2:連續搬運路徑 2: Continuous transportation path
2a:搬入搬運路徑 2a: moving into the transportation path
2b:照射區域搬運路徑 2b: Transportation path of irradiation area
2c:搬出搬運路徑 2c: Moving out of the transportation path
3:局部氣體密封部 3: Local gas seal
20:氣體上浮裝置 20: Gas floating device
42:雷射光 42: Laser light
100a、100b、100c:被處理體 100a, 100b, 100c: body to be processed
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| JP6215281B2 (en) * | 2015-10-27 | 2017-10-18 | 株式会社日本製鋼所 | SUBSTRATE TRANSFER DEVICE, SEMICONDUCTOR MANUFACTURING DEVICE, AND SUBSTRATE TRANSFER METHOD |
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| CN112582322A (en) | 2021-03-30 |
| JP6560198B2 (en) | 2019-08-14 |
| CN112582322B (en) | 2024-07-30 |
| CN105830201A (en) | 2016-08-03 |
| WO2015174347A1 (en) | 2015-11-19 |
| TW201546904A (en) | 2015-12-16 |
| KR102337428B1 (en) | 2021-12-09 |
| KR20170005390A (en) | 2017-01-13 |
| JPWO2015174347A1 (en) | 2017-06-01 |
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