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TWI692811B - Laser annealing device, continuous conveying path for laser annealing treatment, laser light irradiation means, and laser annealing treatment method - Google Patents

Laser annealing device, continuous conveying path for laser annealing treatment, laser light irradiation means, and laser annealing treatment method Download PDF

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TWI692811B
TWI692811B TW104114881A TW104114881A TWI692811B TW I692811 B TWI692811 B TW I692811B TW 104114881 A TW104114881 A TW 104114881A TW 104114881 A TW104114881 A TW 104114881A TW I692811 B TWI692811 B TW I692811B
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TW201546904A (en
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谷川貞夫
澤井美喜
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日商日本製鋼所股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • H10P30/20
    • H10P34/42
    • H10P72/0436
    • H10P72/3202
    • H10P72/3314
    • H10P95/90
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0838Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt
    • H10P14/2922
    • H10P14/3402
    • H10P14/3808
    • H10P14/382

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Abstract

在對被處理體照射雷射光而進行退火處理的雷射退火裝置中,包括:連續搬運路徑,將被處理體在固定的方向上連續地進行搬運;以及雷射光照射手段,對由連續搬運路徑搬運的被處理體照射雷射光,所述連續搬運路徑包括:搬入搬運路徑,向連續搬運路徑的一部分且連續搬運路徑的上游側搬入被處理體並進行搬運;照射區域搬運路徑,為連續搬運路徑的一部分且搬入搬運路徑的下游側,一邊搬運被處理體一邊對被處理體照射雷射光而進行退火處理;及搬出搬運路徑,為連續搬運路徑的一部分且照射區域搬運路徑的下游側,搬運並搬出經過退火處理的被處理體。 The laser annealing apparatus that irradiates the object with laser light and performs annealing treatment includes: a continuous conveying path for continuously conveying the object in a fixed direction; and a laser light irradiation means for the continuous conveying path The object to be transported is irradiated with laser light, and the continuous transport path includes: a transport path to transport and transport the object to a part of the continuous transport path and upstream of the continuous transport path; the transport path to the irradiation area is a continuous transport path Part of and carried into the downstream side of the conveying path, while irradiating the object with laser light while carrying the object to be annealed; and carrying out the conveying path, which is part of the continuous conveying path and the downstream side of the irradiation area conveying path, conveying and Remove the annealed object.

Description

雷射退火裝置、雷射退火處理用連續搬運路徑、 雷射光照射手段以及雷射退火處理方法 Laser annealing device, continuous conveying path for laser annealing, Laser light irradiation method and laser annealing treatment method

本發明是有關於一種對被處理體照射雷射光而進行退火處理的雷射退火裝置、雷射退火處理用連續搬運路徑、雷射光照射手段以及雷射退火處理方法。 The present invention relates to a laser annealing apparatus that irradiates a laser beam on an object to be annealed, a continuous conveying path for laser annealing, a laser light irradiation means, and a laser annealing method.

在被處理體的退火處理中,例如進行的是如下退火處理,即,對設置於矽基板或玻璃基板等的非晶半導體照射雷射光而進行結晶化,對多晶半導體照射雷射光而進行單晶化,對半導體照射雷射光而進行改質,或者進行雜質的活性化或穩定化。 In the annealing process of the object to be processed, for example, an annealing process is performed in which an amorphous semiconductor provided on a silicon substrate, a glass substrate, or the like is irradiated with laser light to crystallize it, and a polycrystalline semiconductor is irradiated with laser light to perform single irradiation Crystallization irradiates the semiconductor with laser light to modify it, or activates or stabilizes impurities.

另外,退火處理的目的並不限定於所述,包括對被處理體照射雷射光而進行熱處理的所有處理。 In addition, the purpose of the annealing treatment is not limited to the above, and includes all treatments that perform heat treatment by irradiating the object with laser light.

進行退火處理的雷射退火裝置如圖10所示,配置成在處理室30內使平台31能夠沿著掃描方向來回移動(X軸方向)。該例中,可藉由因氮氣而引起的上浮移動使平台31在X方向上移動。而且,處理室30內進行製程時調整為氮氣環境氣體,雷射的照射位置具有密封部34,該密封部34將進一步降低了氧濃度的氮氣向被處理體周邊噴出而進行密封。 As shown in FIG. 10, the laser annealing apparatus that performs the annealing process is arranged in the processing chamber 30 so that the stage 31 can move back and forth along the scanning direction (X-axis direction). In this example, the platform 31 can be moved in the X direction by the floating movement due to nitrogen. In addition, the process chamber 30 is adjusted to a nitrogen ambient gas during the process, and the laser irradiation position has a sealing portion 34 that ejects nitrogen gas having a further reduced oxygen concentration around the object to be sealed.

退火處理時,如圖11的流程圖所示,在處理室30的附近,準備基板上形成半導體膜而成的板狀被處理體100,使平台 31向設置於處理室30的澆口(gate)35側移動並通過澆口35向處理室30內搬入被處理體100,將被處理體100載置於平台31上。然後,澆口35關閉而將處理室30內維持為氮氣環境氣體。使被處理體100隨平台31的移動而移動,對該被處理體100的半導體膜照射雷射光42,藉此,一邊將雷射光42相對地掃描一邊照射至被處理體100而進行退火處理。而且,亦有時使平台31向與X軸正交的方向(Y軸方向)旋轉或使平台31旋轉(θ軸旋轉),藉此提高被處理體100的處理性。 During the annealing process, as shown in the flowchart of FIG. 11, in the vicinity of the processing chamber 30, a plate-shaped object to be processed 100 formed by forming a semiconductor film on the substrate is prepared to make the stage 31 moves to the gate 35 side provided in the processing chamber 30, the object to be processed 100 is carried into the processing chamber 30 through the gate 35, and the object to be processed 100 is placed on the platform 31. Then, the gate 35 is closed and the inside of the processing chamber 30 is maintained as a nitrogen atmosphere. The object 100 is moved along with the movement of the stage 31, and the semiconductor film of the object 100 is irradiated with laser light 42, thereby irradiating the object 100 with annealing while scanning the laser light 42 relatively. In addition, the stage 31 may be rotated in a direction orthogonal to the X axis (Y axis direction) or the stage 31 may be rotated (θ axis rotation), thereby improving the processability of the object 100 to be processed.

若對該被處理體100的整個面進行退火處理,則使平台31回到搬入位置,將澆口35打開而自處理室30內取出經退火處理的被處理體100,且使該被處理體100移動至規定位置。然後,在處理室30的附近,準備未經退火處理的新的被處理體100,並重複進行與所述相同的處理。 When the entire surface of the object 100 is annealed, the platform 31 is returned to the loading position, the gate 35 is opened, and the annealed object 100 is taken out of the processing chamber 30 and the object is processed 100 moves to the specified position. Then, in the vicinity of the processing chamber 30, a new object 100 to be processed without annealing is prepared, and the same processing as described above is repeated.

另外,所述裝置中,對具有一個搬入、搬出的澆口的裝置進行了說明,亦周知有在處理室的相向壁分別設置了搬入用的澆口與搬出用的澆口的裝置(例如參照專利文獻1)。該裝置中,完成了退火處理的半導體基板可自搬出用的澆口中取出。然而,在搬入下一個被處理體時,使平台向搬入側移動,而自搬入側的澆口搬入新的被處理體。 In addition, in the above apparatus, an apparatus having one gate for carrying in and carrying out has been described, and it is also known that a gate for carrying in and a gate for carrying out are provided on opposite walls of the processing chamber (for example, refer to Patent Literature 1). In this device, the semiconductor substrate after the annealing process can be taken out from the gate for carrying out. However, when the next object to be processed is carried in, the platform is moved to the carrying side, and a new object to be processed is carried in from the gate on the carrying side.

如所述般,現有的雷射退火裝置中,自搬入口將一塊被處理體搬入至裝置內,進行退火處理後,自搬出口(一般情況下與搬入口為同一)搬出(批次處理)。 As mentioned above, in the existing laser annealing apparatus, a piece of object to be processed is carried into the apparatus from the self-loading inlet, and after annealing treatment, the self-loading outlet (generally the same as the loading inlet) is carried out (batch processing) .

[現有技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開平09-139355號公報 [Patent Document 1] Japanese Patent Laid-Open No. 09-139355

如所述般,被處理體的退火處理是作為針對每個被處理體的批次處理來進行。這是因為被處理體的移動隨保持著被處理體的平台的移動一併進行,且由裝置的構造而決定。該情況下,完成包含搬入.搬出在內的被處理體的處理成為開始下一次被處理體的處理的條件。因此,搬入搬出所花費的時間、在裝置內搬運的時間對於每個被處理體而言為必要時間。 As described above, the annealing process of the object is performed as a batch process for each object. This is because the movement of the object to be processed is accompanied by the movement of the platform holding the object to be processed, and is determined by the structure of the device. In this case, completion includes moving in. The processing of the object to be carried out becomes a condition for starting the next processing of the object. Therefore, the time taken for carrying in and out and the time for carrying in the device are necessary time for each object to be processed.

搬入搬出時間.搬運時間與製程無關,自提高節拍時間(tact time)的觀點而言,則要求儘可能減少。該搬入搬出時間.搬運時間因裝置而不同,為幾十秒以上,需要相對於製程時間的幾分之一的時間,從而成為使生產效率降低的原因。 Time to move in and out. The transfer time has nothing to do with the manufacturing process. From the viewpoint of increasing the tact time, it is required to be reduced as much as possible. The time to move in and out. The conveying time differs depending on the device, and it is tens of seconds or more, and requires a fraction of the time relative to the process time, which causes a reduction in production efficiency.

本申請案發明以所述情況為背景,目的在於提供儘可能減少製程處理時間以外的時間從而可提高生產效率的雷射退火裝置、雷射退火處理用連續搬運路徑、雷射光照射手段以及雷射退火處理方法。 The invention of the present application is based on the circumstances described above, and aims to provide a laser annealing apparatus, a continuous conveying path for laser annealing processing, a laser light irradiation means, and a laser annealing device that can reduce the time other than the process processing time as much as possible to improve production efficiency Annealing treatment method.

本發明的雷射退火裝置中,第1本發明為對被處理體照射雷射光而進行退火處理的雷射退火裝置,其特徵在於包括: 連續搬運路徑,將所述被處理體在固定的方向上連續地搬運;以及雷射光照射手段,對由所述連續搬運路徑搬運的所述被處理體照射所述雷射光。 In the laser annealing apparatus of the present invention, the first invention is a laser annealing apparatus that irradiates a laser beam to an object to be annealed and includes: A continuous conveying path that continuously conveys the object to be processed in a fixed direction; and laser light irradiation means that irradiates the laser light to the object to be processed that is conveyed by the continuous conveying path.

根據所述本發明,可對藉由連續搬運路徑搬運的被處理體照射雷射光而進行退火處理。經處理的被處理體能夠於不對下一個被處理體的搬入作業造成障礙的情況下搬出。 According to the present invention described above, it is possible to irradiate a laser beam on the object to be transported through the continuous transport path to perform annealing treatment. The processed object can be carried out without hindering the carrying-in operation of the next object.

第2本發明的雷射退火裝置如所述第1本發明,其特徵在於包括:處理室,被照射所述雷射光;搬入口,位於所述連續搬運路徑的上游側且設置於所述處理室;以及搬出口,位於所述連續搬運路徑的下游側且設置於所述處理室,所述連續搬運路徑位於自所述搬入口到所述搬出口。 A laser annealing apparatus according to a second aspect of the present invention is the first aspect of the present invention, and includes: a processing chamber irradiated with the laser light; and a loading port located upstream of the continuous transport path and provided in the processing A chamber; and a delivery port, which is located on the downstream side of the continuous transport path and is provided in the processing chamber, and the continuous transport path is located from the transport port to the transport port.

所述本發明中,可藉由與搬入或搬出獨立的處理室內的連續搬運路徑來連續搬運被處理體,被處理體的穩定支持變得容易,且可確保良好的退火性。 In the present invention described above, the object to be processed can be continuously transported by the continuous transport path in the processing chamber independent of the loading or unloading, the stable support of the object to be processed becomes easy, and good annealing property can be ensured.

第3本發明的雷射退火裝置如所述第1本發明或第2本發明,其特徵在於:所述連續搬運路徑包括:照射區域搬運路徑,一邊對所述被處理體照射所述雷射光一邊搬運所述被處理體;以及搬出搬入搬運路徑,位於所述照射區域搬運路徑的上游側及下游側,所述搬出搬入搬運路徑能夠以比所述照射區域搬運路徑中的搬運速度大的搬運速度進行所述被處理體的搬運。 A laser annealing apparatus according to a third aspect of the invention is the first aspect of the invention or the second aspect of the invention, wherein the continuous conveyance path includes an irradiation area conveyance path while irradiating the laser beam to the object While transporting the object to be processed; and a carry-out transport path located on the upstream and downstream sides of the irradiation area transport path, the carry-out transport path can be transported at a higher speed than the transport speed in the irradiation area transport path The object to be processed is transported at a speed.

根據所述本發明,可更高速地進行退火製程以外的搬 運,而可於不受製程時的搬運速度限制的情況下執行搬入、搬出作業,從而作業性得到改善。 According to the present invention described above, it is possible to carry out transportation other than the annealing process at higher speed It can be carried out without being limited by the conveying speed during the manufacturing process, and the workability is improved.

第4本發明的雷射退火裝置如所述第3本發明,其特徵在於:所述搬出搬入搬運路徑中的搬運速度為可變。 A fourth aspect of the laser annealing apparatus of the present invention is the third aspect of the present invention, characterized in that the conveying speed in the carry-out conveying path is variable.

根據所述本發明,因根據搬運時期來改變搬運速度,從而能夠進行更有效率的作業。 According to the present invention described above, since the conveying speed is changed according to the conveying time, more efficient work can be performed.

第5本發明的雷射退火裝置如所述第4本發明,其特徵在於:所述搬出搬入搬運路徑至少能夠以與所述照射區域搬運路徑相同的搬運速度及比所述搬運速度大的搬運速度進行搬運。 A fifth aspect of the laser annealing apparatus of the present invention is the fourth aspect of the present invention, characterized in that the unloading/incoming transport path can transport at least the same transport speed as the transport path of the irradiation area and a transport speed greater than the transport speed Carrying speed.

根據所述本發明,在需要配合製程時的搬運速度的時期能夠以該搬運速度進行搬運,而在其他時期的搬運中能夠進行高速的搬運。 According to the present invention described above, it is possible to carry out the conveying at the conveying speed when it is necessary to match the conveying speed during the manufacturing process, and to perform high-speed conveying during the conveying at other times.

第6本發明的雷射退火裝置如所述第1本發明至第5本發明中的任一本發明,其特徵在於:所述連續搬運路徑包括:支持手段,對所述被處理體進行支持;以及移動手段,使由所述支持手段支持的所述被處理體沿著搬運方向移動。 A sixth aspect of the present invention is the laser annealing apparatus according to any one of the first to fifth aspects of the present invention, wherein the continuous conveying path includes support means for supporting the object to be processed And moving means to move the processed object supported by the supporting means along the conveying direction.

所述本發明中,將支持被處理體的手段與使被處理體移動的手段設為不同的構成,藉此連續搬運時的被處理體的穩定支持及平坦性的確保變得容易,照射雷射光時的焦點深度維持得適當,從而可確保良好的退火性。 In the present invention described above, the means for supporting the object to be processed and the means for moving the object to be processed are configured differently, whereby the stable support of the object to be processed and the guarantee of flatness during continuous transportation are facilitated, and the irradiation of thunder The depth of the focal point when irradiating light is maintained appropriately, so that good annealing property can be ensured.

第7本發明的雷射退火裝置如所述第6本發明,其特徵在於:所述支持手段為藉由氣體的向上方噴出而使所述被處理體 上浮並進行支持的氣體上浮手段。 A seventh aspect of the laser annealing apparatus of the present invention is the sixth aspect of the present invention, characterized in that the support means is to eject the object to be processed by upward gas ejection Means of gas floating and supporting.

根據所述本發明,半導體基板的姿勢控制變得容易,可於不破壞半導體基板的穩定保持的情況下進行移動。 According to the present invention, the posture control of the semiconductor substrate becomes easy, and it can be moved without destroying the stable holding of the semiconductor substrate.

第8本發明的雷射退火裝置如所述第7本發明,其特徵在於:所述氣體上浮手段使用惰性氣體來作為所述氣體。 The laser annealing apparatus of the eighth aspect of the invention is the seventh aspect of the invention, wherein the gas floating means uses an inert gas as the gas.

根據所述本發明,可增加藉由被處理體的氣體上浮及所噴出的惰性氣體來將被處理體的照射區域維持為惰性的環境氣體的效果。 According to the present invention described above, it is possible to increase the effect of maintaining the irradiated area of the object to be an inert ambient gas by the gas floating of the object to be treated and the inert gas ejected.

第9本發明的雷射退火裝置如所述第6本發明至第8本發明中的任一本發明,其特徵在於:所述移動手段在將所述被處理體向所述連續搬運路徑的下游側搬運後,能夠復位移動至所述連續搬運路徑的上游側。 A laser annealing apparatus according to a ninth aspect of the present invention is any one of the sixth aspect to the eighth aspect of the invention, characterized in that the moving means moves the object to be processed toward the continuous conveyance path After the downstream side is transported, it can be moved back to the upstream side of the continuous transport path.

根據所述本發明,藉由移動手段進行復位移動,可進行被處理體的連續搬運。此時,藉由使移動手段的復位移動比被處理體的搬運速度大,而可減小被處理體間的間隔從而提高生產效率。 According to the present invention described above, by performing the reset movement by the moving means, continuous conveyance of the object to be processed can be performed. At this time, by making the return movement of the moving means higher than the conveying speed of the object to be processed, the interval between the objects to be processed can be reduced to improve the production efficiency.

另外,移動手段的復位移動可為呈環狀移動而復位者,而且,亦可為藉由來回移動而移動者,移動形態不作特別限定。 In addition, the resetting movement of the moving means may be a ring-shaped movement and a resetting movement, and may also be a movement by a back-and-forth movement. The movement form is not particularly limited.

第10本發明的雷射退火裝置如所述第1本發明至第9本發明中的任一本發明,其特徵在於:包括局部氣體密封部,所述局部氣體密封部噴射至少覆蓋所述連續搬運路徑中被照射所述雷射光的所述被處理體的表面區域的局部氣體。 The laser annealing apparatus of the tenth invention is any one of the first to ninth inventions described above, characterized in that it includes a partial gas seal portion, and the partial gas seal portion sprays to cover at least the continuous Local gas in the surface area of the object to be irradiated with the laser light in the conveyance path.

第11本發明的雷射退火裝置如所述第10本發明,其特徵在於:所述局部氣體為惰性氣體。 The laser annealing apparatus of the eleventh aspect of the invention is the tenth aspect of the invention, wherein the local gas is an inert gas.

根據所述各本發明,可使被照射雷射光的區域或其周圍處於潔淨的環境,從而容易對處理室整體進行環境控制。 According to the present inventions described above, the area irradiated with laser light or its surroundings can be kept in a clean environment, so that it is easy to control the environment of the entire processing chamber.

第12本發明的雷射退火裝置如所述第10本發明或第11本發明,其特徵在於:除所述局部氣體外的環境氣體為空氣。 The twelfth invention of the laser annealing apparatus is the tenth invention or the eleventh invention, characterized in that the ambient gas other than the local gas is air.

根據所述本發明,可容易且廉價地調整環境氣體。 According to the present invention, the environmental gas can be adjusted easily and inexpensively.

第13本發明的雷射退火處理用連續搬運路徑一邊將被處理體在固定的方向上連續地搬運一邊進行雷射退火處理,其特徵在於包括:搬入搬運路徑,向所述連續搬運路徑的一部分且連續搬運路徑的上游側,搬入並搬運被處理體;照射區域搬運路徑,為所述連續搬運路徑的一部分且所述搬入搬運路徑的下游側,一邊搬運經過所述搬入搬運路徑的所述被處理體一邊對所述被處理體照射雷射光而進行退火處理;以及搬出搬運路徑,為所述連續搬運路徑的一部分且所述照射區域搬運路徑的下游側,搬運並搬出經過所述退火處理的所述被處理體。 A thirteenth continuous transport path for laser annealing of the present invention performs laser annealing while continuously transporting the object to be processed in a fixed direction, and is characterized by including a transport path and a part of the continuous transport path The upstream side of the continuous transport path carries and transports the object to be processed; the irradiation area transport path is a part of the continuous transport path and is downstream of the transport path, while transporting the object passing through the transport path The processing body irradiates the object to be processed with laser light to perform annealing treatment; and the carrying out conveyance path is a part of the continuous conveying path and is downstream of the irradiation area conveying path, conveying and carrying out the annealed The object to be processed.

第14本發明的雷射退火處理用連續搬運路徑如所述第13本發明,其特徵在於:能夠使所述搬入搬運路徑及所述搬出搬運路徑中的搬運速度比所述照射區域搬運路徑中的搬運速度大地搬運所述被處理體。 The 14th invention continuous conveying path for laser annealing is as the 13th invention described above, characterized in that the conveying speed in the carrying-in conveying path and the carrying-out conveying path can be made higher than in the irradiation area carrying path The conveying speed of the conveying the object to be processed.

第15本發明的雷射退火處理用連續搬運路徑如所述第13本發明或第14本發明,其特徵在於:所述連續搬運路徑在至少所述照射區域搬運路徑,一邊藉由氣體的向上方噴出使所述被處理體上浮一邊沿搬運方向移動。 The fifteenth invention of the continuous transport path for laser annealing is as the thirteenth invention or the fourteenth invention, characterized in that the continuous transport path is in at least the irradiation area transport path, while the gas The side ejection causes the object to be treated to float while moving in the conveying direction.

第16本發明的雷射光照射手段的特徵在於包括:雷射光源,輸出雷射光;以及光學系統構件,對藉由連續搬運路徑連續地搬運並到達所述連續搬運路徑的照射區域的被處理體,導引所述雷射光,相對地進行掃描並加以照射。 The laser light irradiation means of the 16th invention is characterized by including: a laser light source that outputs laser light; and an optical system member that continuously transports the object to be processed through the continuous transport path and reaches the irradiation area of the continuous transport path , Guide the laser light, scan and illuminate it relatively.

第17本發明的雷射退火處理方法一邊藉由將被處理體在固定的方向上連續地搬運的連續搬運路徑搬運所述被處理體,一邊對所述被處理體照射雷射光而進行退火處理,所述雷射退火處理方法的特徵在於包括:搬入搬運步驟,在所述連續搬運路徑的一部分且連續搬運路徑的上游側,搬入並搬運被處理體;退火處理步驟,在所述連續搬運路徑的一部分且進行了所述搬入搬運步驟的連續搬運路徑的下游側,一邊搬運所述被處理體一邊照射所述雷射光而進行退火處理;以及搬出搬運步驟,在所述連續搬運路徑的一部分且進行了所述退火處理的連續搬運路徑的下游側,搬運並搬出所述被處理體。 The laser annealing treatment method of the 17th invention irradiates laser light to the object to be annealed while conveying the object to be processed through a continuous conveying path that continuously conveys the object to be fixed in a fixed direction The laser annealing treatment method is characterized in that it includes: a carrying-in and conveying step in which a part to be processed is carried in and conveying on a part of the continuous conveying path and on the upstream side of the continuous conveying path; and an annealing processing step in the continuous conveying path Part of the continuous conveying path downstream of the carry-in conveying step, the laser beam is irradiated while carrying the object to be annealed; and the carry-out conveying step is performed on a part of the continuous conveying path and On the downstream side of the continuous conveying path where the annealing process has been performed, the object to be processed is conveyed and carried out.

第18本發明的雷射退火處理方法如所述第17本發明,其特徵在於:能夠使所述搬入搬運步驟及所述搬出搬運步驟中的所述連續搬運路徑的搬運速度比所述退火處理步驟中的所述連續 搬運路徑的搬運速度大地進行搬運。 The laser annealing treatment method of the eighteenth present invention is as the seventeenth present invention, characterized in that the continuous conveying path in the carry-in and conveying steps and the carry-out and conveying steps can be made faster than the annealing process The continuous in step The transportation speed of the transportation path is large.

第19本發明的雷射退火處理方法如所述第17本發明或第18本發明,其特徵在於:所述各步驟中的至少所述退火處理步驟中,一邊藉由氣體的向上方噴出使所述被處理體上浮一邊沿搬運方向移動。 The laser annealing treatment method of the nineteenth invention is as described in the seventeenth invention or the eighteenth invention, characterized in that at least one of the annealing steps in each of the steps is performed by gas being sprayed upward The to-be-processed object floats while moving in the conveying direction.

根據所述本發明,可極力減小被處理體的退火處理製程以外的時間,從而可大幅提高生產性。 According to the present invention, the time outside the annealing process of the object can be reduced as much as possible, and the productivity can be greatly improved.

1:處理室(雷射退火裝置) 1: Processing room (laser annealing device)

1a:搬入口 1a: moving entrance

1b:搬出口 1b: moving out

2、2d、200a、200b:連續搬運路徑 2. 2d, 200a, 200b: continuous transportation path

2a:搬入搬運路徑 2a: moving into the transportation path

2b:照射區域搬運路徑 2b: Transportation path of irradiation area

2c:搬出搬運路徑 2c: Moving out of the transportation path

3、3a、3b:局部氣體密封部 3. 3a, 3b: local gas seal

4、5:空氣送出部 4, 5: Air delivery section

10:搬入室 10: Move into the room

11:收容室 11: containment room

12:清洗部 12: Cleaning Department

13:搬入裝置 13: moving into the device

14:搬出裝置 14: Remove the device

15:搬出室 15: Move out of the room

20:氣體上浮裝置 20: Gas floating device

20a:旋轉輥 20a: rotating roller

21、25:滑動部 21, 25: sliding part

22、26:升降部 22, 26: Lifting Department

23、27:吸附部 23, 27: adsorption section

28、29:導件 28, 29: guide

30:處理室 30: processing room

31:平台 31: Platform

34:密封部 34: Sealing part

35:澆口 35: Gate

40:雷射光源 40: Laser light source

41:光學系統構件 41: Optical system components

42、42a、42b:雷射光 42, 42a, 42b: laser light

100、100a、100b、100c、100d:被處理體 100, 100a, 100b, 100c, 100d: body to be processed

S1、S2、S3:基板 S1, S2, S3: substrate

N:N2N:N 2 layers

圖1(A)、圖1(B)是表示本發明的一實施形態的雷射退火裝置的概要的正面剖視圖。 1(A) and 1(B) are front sectional views showing the outline of a laser annealing apparatus according to an embodiment of the present invention.

圖2(A)、圖2(B)是本發明的一實施形態的雷射退火裝置的處理室內的平面概要圖(A圖)及將一部分放大的前視圖(B圖)。 2(A) and 2(B) are a schematic plan view (FIG. A) and a partially enlarged front view (FIG. B) of a processing chamber of a laser annealing apparatus according to an embodiment of the present invention.

圖3是本發明的一實施形態的雷射退火裝置的雷射退火處理的流程圖。 3 is a flowchart of the laser annealing process of the laser annealing apparatus according to an embodiment of the present invention.

圖4是詳細表示本發明的一實施形態的雷射退火裝置的吸附部的動作的流程圖。 4 is a flowchart showing in detail the operation of the adsorption unit of the laser annealing apparatus according to an embodiment of the present invention.

圖5是本發明的一實施形態的雷射退火裝置的製程時的立體圖。 5 is a perspective view of a laser annealing apparatus according to an embodiment of the present invention during the manufacturing process.

圖6是表示現有例的動作時的雷射振盪與搬出搬入的時序圖 的圖。 FIG. 6 is a timing chart showing laser oscillation and carrying in and out during operation of the conventional example. Figure.

圖7是表示本發明的一實施形態的動作時的雷射振盪與搬出搬入的時序圖的圖。 7 is a diagram showing a timing chart of laser oscillation and carrying in and carrying out during operation according to an embodiment of the present invention.

圖8是本發明的另一實施形態的製程時的立體圖。 FIG. 8 is a perspective view of another embodiment of the present invention during the manufacturing process.

圖9(A)、圖9(B)是表示本發明的又一實施形態的平面圖及側視圖的圖。 9(A) and 9(B) are a plan view and a side view showing still another embodiment of the present invention.

圖10是說明現有的雷射退火裝置的動作的圖。 10 is a diagram illustrating the operation of a conventional laser annealing apparatus.

圖11是現有的雷射退火裝置的雷射退火處理的流程圖。 11 is a flowchart of a laser annealing process of a conventional laser annealing device.

以下基於隨附圖式說明本發明的一實施形態。在本發明的圖式中,S1、S2、S3表示基板,N表示N2層。 An embodiment of the present invention will be described below based on the accompanying drawings. In the drawings of the present invention, S1, S2, and S3 represent the substrate, and N represents the N 2 layer.

圖1(A)、圖1(B)是表示雷射退火裝置的概要的圖,(A)圖中將處理室放大表示,(B)圖中表示系統整體的概要。本實施形態中,作為被處理體100,以在玻璃基板上形成半導體膜而成者為處理對象。 1(A) and 1(B) are diagrams showing an outline of a laser annealing apparatus, (A) shows an enlarged view of a processing chamber, and (B) shows an outline of the entire system. In this embodiment, as the object 100 to be processed, a semiconductor film is formed on a glass substrate as a processing target.

處理室1如圖1(A)、圖1(B)所示,具有長方體形狀的壁部,在長度方向的相向壁分別設置著搬入口1a(圖示左側)及搬出口1b(圖示右側)。搬入口1a、搬出口1b可開放,而且,能夠設為可開閉的構成。作為可開閉的構成,亦可設為簡單的密封構造。另外,搬入口與搬出口只要沿著連續搬運路徑的固定的搬運方向而具有即可,則設置位置不限定於特定位置。 As shown in FIG. 1(A) and FIG. 1(B), the processing chamber 1 has a rectangular parallelepiped wall portion, and a loading wall 1a (left side in the figure) and a discharging port 1b (right side in the figure) are respectively provided on the opposite walls in the longitudinal direction ). The entrance 1a and the exit 1b can be opened and can be opened and closed. As a structure that can be opened and closed, a simple sealing structure may be used. In addition, the loading inlet and the loading outlet need only be provided along a fixed transportation direction of the continuous transportation path, and the installation position is not limited to a specific position.

處理室1內,從搬入口1a內側到搬出口1b內側設置著 連續搬運路徑2。連續搬運路徑2上配置著氣體上浮裝置20。氣體上浮裝置20自下方朝向上方噴出氣體,對上方的被處理體100進行上浮支持,相當於本發明的氣體上浮手段,即支持手段。 Inside the processing chamber 1, from the inside of the inlet 1a to the inside of the outlet 1b Continuous transportation path 2. A gas floating device 20 is arranged on the continuous conveying path 2. The gas-floating device 20 ejects gas from below to upwards to support the object to be processed 100 above, which corresponds to the gas-floating means of the present invention, that is, the supporting means.

另外,氣體上浮裝置20因具有多個未圖示的噴出位置而可調整被處理體100的姿勢、彎曲等。 In addition, since the gas floating device 20 has a plurality of ejection positions (not shown), the posture, curvature, and the like of the object 100 can be adjusted.

而且,在氣體上浮裝置20的兩側,如圖2(A)、圖2(B)所示,沿著長邊方向配置著導件28、導件29,在導件28、導件29設置著能夠分別沿著導件移動的滑動部21、滑動部25。滑動部21、滑動部25可根據其位置來變更移動速度。滑動部21、滑動部25上設置著長邊方向上可改變位置而能夠上下地調整位置的多個升降部22、升降部26。該例中,各滑動部21、滑動部25中分別具有兩個升降部22、升降部22及升降部26、升降部26。多個升降部22、升降部22或升降部26、升降部26中,亦可改變彼此的上升位置來調整被處理體100的支持狀態。 Furthermore, on both sides of the gas floating device 20, as shown in FIGS. 2(A) and 2(B), a guide 28 and a guide 29 are arranged along the longitudinal direction, and the guide 28 and the guide 29 are provided The sliding portion 21 and the sliding portion 25 that can move along the guide, respectively. The sliding portion 21 and the sliding portion 25 can change the moving speed according to their positions. The sliding portion 21 and the sliding portion 25 are provided with a plurality of elevating portions 22 and 26 that can change positions in the longitudinal direction and can adjust the position up and down. In this example, each of the sliding part 21 and the sliding part 25 has two elevating parts 22, elevating parts 22, elevating parts 26, and elevating parts 26, respectively. Among the plurality of lifting units 22, the lifting unit 22, the lifting unit 26, and the lifting unit 26, the support positions of the object to be processed 100 may be adjusted by changing the rising positions of each other.

升降部22、升降部26上具有吸附部23、吸附部27,對利用氣體上浮裝置20而上浮的被處理體100進行吸附。導件28、滑動部21、升降部22、吸附部23及導件29、滑動部25、升降部26、吸附部27中,該些協同工作而構成本發明的移動手段。 The elevating unit 22 and the elevating unit 26 have an adsorption unit 23 and an adsorption unit 27, and adsorb the object 100 to be floated by the gas floating device 20. The guide 28, the sliding portion 21, the elevating portion 22, the suction portion 23 and the guide 29, the sliding portion 25, the elevating portion 26, and the suction portion 27 cooperate to constitute the moving means of the present invention.

所述氣體上浮裝置20與導件28、滑動部21、升降部22、吸附部23及導件29、滑動部25、升降部26、吸附部27構成本發明的連續搬運路徑2。 The gas floating device 20, the guide 28, the sliding portion 21, the elevating portion 22, the suction portion 23 and the guide 29, the sliding portion 25, the elevating portion 26, and the adsorption portion 27 constitute the continuous conveying path 2 of the present invention.

另外,本實施形態中,對連續搬運路徑2跨及處理室1 內而設置的情況進行了說明,而連續搬運路徑2亦可伸長至處理室1外。而且,處理室1並非為本發明中必需者。 In addition, in this embodiment, the continuous conveying path 2 spans the processing chamber 1 The case where it is installed inside has been described, and the continuous conveying path 2 can also be extended outside the processing chamber 1. Moreover, the processing chamber 1 is not essential in the present invention.

在處理室1的外部,如圖1(A)、圖1(B)所示,具有輸出雷射光的雷射光源40。本發明中,雷射光的種類不作特別限定,且亦可為連續波、脈衝波中的任一者。在雷射光的光路上配置著包含反射鏡、透鏡等的光學系統構件41,該例中將設為線光束(line beam)形狀的雷射光42導入至處理室1內並照射至連續搬運路徑2上的被處理體100。雷射光源40、光學系統構件41構成本發明的雷射光照射手段。 As shown in FIGS. 1(A) and 1(B), the outside of the processing chamber 1 has a laser light source 40 that outputs laser light. In the present invention, the type of laser light is not particularly limited, and may be either continuous wave or pulse wave. An optical system member 41 including a mirror, a lens, and the like is arranged on the optical path of the laser light. In this example, the laser light 42 having a line beam shape is introduced into the processing chamber 1 and irradiated to the continuous conveying path 2上的processed body 100. The laser light source 40 and the optical system member 41 constitute the laser light irradiation means of the present invention.

另外,連續搬運路徑2中,在搬運時,自被處理體100的搬運方向前端到達雷射光42的照射位置的位置開始,到被處理體100的搬運方向後端即將從雷射光42的照射位置拔出前的位置為止成為照射區域,如圖1(A)、圖1(B)所示,其間的連續搬運路徑2的一部分構成照射區域搬運路徑2b。位於照射區域搬運路徑2b的上游側的連續搬運路徑2的一部分構成搬入搬運路徑2a,位於照射區域搬運路徑2b的下游側的連續搬運路徑2的一部分構成搬出搬運路徑2c。另外,圖1(A)、圖1(B)中,圖示左側的邊界線中,被處理體100的後端側為基準,圖示右側的邊界線中,被處理體100的前端側為基準。另外,照射區域搬運路徑至少包含所述搬運路徑的範圍,亦可將比該範圍大的搬運路徑的範圍作為照射區域搬運路徑。 In addition, in the continuous conveyance path 2, during the conveyance, from the front end of the object 100 in the conveying direction to the position where the laser light 42 is irradiated, to the rear end of the object 100 in the conveying direction from the irradiation position of the laser light 42 The position before extraction becomes the irradiation area. As shown in FIGS. 1(A) and 1(B), a part of the continuous conveyance path 2 in between constitutes the irradiation area conveyance path 2b. A part of the continuous conveyance path 2 located on the upstream side of the irradiation area conveyance path 2b constitutes the conveyance conveyance path 2a, and a part of the continuous conveyance path 2 located on the downstream side of the irradiation area conveyance path 2b constitutes the conveyance conveyance path 2c. In addition, in FIGS. 1(A) and 1(B), in the boundary line on the left side in the figure, the rear end side of the object to be processed 100 is used as a reference, and in the boundary line on the right side in the figure, the front end side of the object to be processed 100 is Benchmark. In addition, the irradiation area conveyance path includes at least the range of the conveyance path, and a range of conveyance paths larger than this range may be used as the irradiation area conveyance path.

在照射區域搬運路徑2b中,被處理體100需要以製程 處理時的搬運速度移動,所述移動手段以與製程處理中的掃描速度相應的搬運速度移動。另外,在可變更雷射光42的照射位置的構成的情況下,移動手段的搬運速度以包含雷射光42的照射位置在內而雷射光42以掃描速度相對移動的方式來決定搬運速度。 In the irradiation area conveyance path 2b, the object to be processed 100 needs to be processed The conveying speed during processing moves, and the moving means moves at a conveying speed corresponding to the scanning speed in the process processing. In addition, when the configuration of the irradiation position of the laser light 42 can be changed, the transportation speed of the moving means determines the transportation speed such that the irradiation position of the laser light 42 is included and the laser light 42 relatively moves at the scanning speed.

搬入搬運路徑2a及搬出搬運路徑2c中,被處理體100能夠以比照射區域搬運路徑2b高的速度移動,其間能夠使所述移動手段以相對高的速度移動。另外,搬入搬運路徑2a及搬出搬運路徑2c中,在接近照射區域搬運路徑2b的範圍內,為了用於搬運間隔的調整或雷射光的照射等,亦能夠以與照射區域搬運路徑2b相同的速度搬運被處理體100。 In the carrying-in conveying path 2a and the carrying-out conveying path 2c, the object to be processed 100 can move at a higher speed than the irradiation area conveying path 2b, and the moving means can be moved at a relatively high speed during this period. In addition, in the conveyance path 2a and the conveyance path 2c, within the range close to the irradiation area conveyance path 2b, it can be used at the same speed as the irradiation area conveyance path 2b for adjustment of the conveyance interval or laser beam irradiation, etc. The object to be processed 100 is transported.

進而,雷射退火裝置1中,如圖1(B)所示,搬入室10以與處理室1的搬入口1a側連通的方式鄰接於該搬入口1a側,搬入室10的室內可進行密閉。搬入室10中包括:收容室11,收容退火處理前的多個被處理體100;清洗部12,對自收容室11取出的被處理體100進行清洗;以及搬入裝置13,能夠將由清洗部12清洗的被處理體100通過搬入口1a而隔開規定間隔地連續搬入至處理室1。搬入被處理體100時的規定間隔為不與先行的被處理體100重疊且不會在搬入時造成干擾者即可,並不限定於特定的範圍。而且,亦可使半導體基板彼此的規定間隔不同。 Furthermore, in the laser annealing apparatus 1, as shown in FIG. 1(B), the loading chamber 10 is adjacent to the loading inlet 1a side so as to communicate with the loading inlet 1a side of the processing chamber 1, and the interior of the loading chamber 10 can be sealed . The carry-in chamber 10 includes: a storage chamber 11 that houses a plurality of objects to be processed 100 before annealing; a cleaning unit 12 that cleans the processed object 100 taken out from the storage chamber 11; and a loading device 13 that can be used by the cleaning unit 12 The cleaned object 100 is continuously carried into the processing chamber 1 at predetermined intervals through the inlet 1a. The predetermined interval at the time of carrying in the object to be processed 100 may be a person who does not overlap with the preceding object to be processed 100 and does not cause interference during the carrying in, and is not limited to a specific range. Furthermore, the predetermined intervals between the semiconductor substrates may be different.

所述收容室11的收容方法不作特別限定,利用豎立放置、橫向放置等適當的方法收容被處理體100即可。清洗部可為批次式、單片式中的任一者,清洗方法可為濕式清洗、乾式清洗或該些的 複合清洗的任一者。 The storage method of the storage chamber 11 is not particularly limited, and the object 100 may be stored by an appropriate method such as standing upright or horizontally. The cleaning part can be either batch type or single-piece type, and the cleaning method can be wet cleaning, dry cleaning or some of these Any of compound cleaning.

進而,搬出室15鄰接於處理室1的搬出口1b側,搬出室15的室內與搬出口1b連通且可密閉。 Furthermore, the unloading chamber 15 is adjacent to the unloading outlet 1b side of the processing chamber 1, and the interior of the unloading chamber 15 communicates with the unloading outlet 1b and can be sealed.

搬出室15內設置著搬出裝置14,該搬出裝置14自處理室1的連續搬運路徑連續地取出退火處理完畢的被處理體100。 A carrying-out device 14 is provided in the carrying-out chamber 15. The carrying-out device 14 continuously takes out the annealed object 100 from the continuous conveying path of the processing chamber 1.

而且,處理室1內,從處理室1外部提取空氣並向處理室1內噴出空氣的空氣送出部4、空氣送出部5分別與搬入口1a、搬出口1b接近而設置。 Further, in the processing chamber 1, an air sending part 4 and an air sending part 5 that extract air from the outside of the processing chamber 1 and eject the air into the processing chamber 1 are respectively provided close to the inlet 1 a and the outlet 1 b.

進而,在被照射雷射光42的區域的上方具有局部氣體密封部3,該局部氣體密封部3向下方噴射覆蓋雷射光照射區域及其周圍的局部氣體。另外,局部氣體的噴射區域能夠以至少包含被照射雷射光的區域為前提,來規定適當的範圍。 Furthermore, a local gas seal 3 is provided above the area irradiated with the laser light 42, and the local gas seal 3 sprays downward the local gas covering the laser light irradiated area and its surroundings. In addition, the injection region of the local gas can define an appropriate range on the premise of including at least the region irradiated with laser light.

另外,該例中,使用惰性氣體,例如氮氣來作為局部氣體。而且,雷射光42通過局部氣體密封部3內而照射至被處理體100。 In addition, in this example, an inert gas such as nitrogen is used as the local gas. Furthermore, the laser light 42 is irradiated to the object 100 through the local gas sealing portion 3.

而且,氣體上浮裝置20中,理想的是至少在與局部氣體密封部3同等的範圍內,使用惰性氣體,例如氮氣來作為上浮氣體。在該範圍以外,亦可使用廉價的空氣等來作為上浮氣體。 In addition, in the gas floating device 20, it is desirable to use an inert gas, such as nitrogen, as the floating gas at least in the same range as the local gas sealing portion 3. Outside this range, inexpensive air or the like can also be used as the floating gas.

接下來,一邊參照圖1(A)、圖1(B)至圖4一邊對使用了所述雷射退火裝置的雷射退火處理進行說明。 Next, the laser annealing process using the laser annealing apparatus will be described with reference to FIGS. 1(A) and 1(B) to FIG. 4.

收容室11內收容並可供給多個被處理體100。另外,收容室11中亦可在雷射退火處理中補充新的被處理體100。另外,圖3、 圖4中為了對依次搬入至處理室的被處理體加以區分,而按照搬入順序由被處理體100a、被處理體100b、被處理體100c來進行表示。 The storage chamber 11 accommodates and can supply a plurality of objects to be processed 100. In addition, in the storage chamber 11, a new object to be processed 100 may be added during laser annealing. In addition, Figure 3. In FIG. 4, in order to distinguish the objects to be sequentially transferred into the processing chamber, the objects to be processed are represented by the object to be processed 100 a, the object to be processed 100 b, and the object to be processed 100 c in the order of loading.

收容室11內的被處理體100在清洗部12中,藉由批次式或單片式進行濕式或乾式清洗。處理室1中,在連續搬運路徑2中,利用氣體上浮裝置20進行氣體噴射或氣體噴射的準備,使滑動部21、滑動部25中的至少一者沿著導件28或導件29向搬入口1a側移動。 The to-be-processed body 100 in the storage chamber 11 is cleaned by the wet type or the dry type by the batch type or the single piece type in the cleaning part 12. In the processing chamber 1, in the continuous conveying path 2, the gas floating device 20 is used to prepare for gas injection or gas injection, and at least one of the sliding portion 21 and the sliding portion 25 is carried along the guide 28 or the guide 29 The port 1a moves.

另一方面,雷射光源40中,輸出雷射光,藉由光學系統構件41生成線光束。待機狀態下,雷射光42藉由光學系統構件41中的一部分構件而不向處理室1內照射光束,並退避至處理室外的適宜部位。 On the other hand, the laser light source 40 outputs laser light, and the optical system member 41 generates a linear beam. In the standby state, the laser light 42 does not irradiate the light beam into the processing chamber 1 through a part of the optical system members 41 and retreats to a suitable location outside the processing chamber.

首先,利用圖3對被處理體100a、被處理體100b的移動進行簡單說明。 First, the movement of the object 100a and the object 100b will be briefly described using FIG. 3.

搬入室10中,將由清洗部12清洗的被處理體100a自搬入口1a搬入至處理室1內,並藉由連續搬運路徑2的搬入搬運路徑2a相對高速地進行搬運。當被處理體100到達雷射光42的照射區域時,藉由連續搬運路徑2的照射區域搬運路徑2b一邊將被處理體100以規定的搬運速度(相對低的速度)進行搬運,一邊將導入至處理室1內的雷射光42照射至表面。因被處理體100a通過照射區域,而對被處理體100a相對地掃描雷射光42,從而被處理體100a的規定的區域受到退火處理。經退火處理的被處理體 100脫離照射區域搬運路徑2b,而藉由連續搬運路徑2的搬出搬運路徑2c相對高速地搬運至搬出口1b附近為止,並藉由搬出裝置14立即自處理室1搬出至搬出室15。 In the carrying-in chamber 10, the object 100a cleaned by the washing unit 12 is carried into the processing chamber 1 from the carrying-in port 1a, and is conveyed at a relatively high speed through the carrying-in conveying path 2a of the continuous conveying path 2. When the to-be-processed body 100 reaches the irradiation area of the laser beam 42, the to-be-processed body 100 is conveyed by the irradiation area conveyance path 2b of the continuous conveyance path 2 at a predetermined conveyance speed (relatively low speed), and it is introduced to The laser light 42 in the processing chamber 1 is irradiated to the surface. Since the object to be processed 100a passes through the irradiation area, the laser light 42 is relatively scanned on the object to be processed 100a, so that a predetermined area of the object to be processed 100a is annealed. Annealed body 100 is separated from the irradiation area conveyance path 2b, and the conveyance conveyance path 2c of the continuous conveyance path 2 is conveyed to the vicinity of the conveyance exit 1b at a relatively high speed, and is immediately conveyed out of the processing chamber 1 to the conveyance chamber 15 by the conveyance device 14.

而且,所述製程時,將下一個被處理體100b在被處理體100a的退火處理中搬入至處理室1內並由搬入搬運路徑2a高速地進行搬運,與被處理體100a隔開規定間隔地到達照射區域搬運路徑2b。被處理體100b由照射區域搬運路徑2b而與所述同樣地以規定的速度一邊搬運一邊進行退火處理。當退火處理結束時,與所述同樣地,通過搬出搬運路徑2c而相對高速地搬運,並藉由搬出裝置14自處理室1搬出至搬出室15。圖中雖未表示,但以後均能夠同樣地將新的半導體基板搬入至處理室1內而進行連續的處理。 In the above process, the next object 100b is carried into the processing chamber 1 during the annealing process of the object 100a and is conveyed at a high speed by the input conveying path 2a, with a predetermined interval from the object 100a Reached the irradiation area transport path 2b. The object to be processed 100b is annealed while being transported at a predetermined speed in the same manner as described above by the irradiation area transport path 2b. When the annealing process is completed, it is transported at a relatively high speed through the transport path 2c as described above, and is transported out of the processing room 1 to the transport room 15 by the transport device 14. Although not shown in the figure, new semiconductor substrates can be similarly carried into the processing chamber 1 and continuously processed in the future.

接下來,基於圖2(A)、圖2(B)及圖4對連續搬運路徑2的動作進行說明。 Next, the operation of the continuous conveyance path 2 will be described based on FIG. 2(A), FIG. 2(B), and FIG. 4.

初始狀態下,滑動部21、滑動部25沿著導件28、導件29而位於搬入口1a側的初始位置。說明導件28側的移動手段針對被處理體100a進行動作的情況。 In the initial state, the sliding portion 21 and the sliding portion 25 are located at the initial position on the side of the entrance 1a along the guide 28 and the guide 29. The case where the moving means on the guide 28 side operates on the object 100a will be described.

當被處理體100a被搬入至處理室1時,升降部22上升至適宜位置,並藉由吸附部23對被處理體100a的背面側進行吸附。滑動部21中,當由吸附部23吸附被處理體100a時,以預定的速度向搬出口1b側移動。藉此,被處理體100a沿著連續搬運路徑2移動。就移動速度而言,在搬入搬運路徑2a及搬出搬運路 徑2c中以相對高的速度移動,而在照射區域搬運路徑2b,則根據製程時的掃描速度以相對低的速度移動。 When the to-be-processed body 100a is carried into the processing chamber 1, the raising-lowering part 22 raises to a suitable position, and the suction part 23 adsorbs the back side of the to-be-processed body 100a. In the sliding portion 21, when the object to be processed 100 a is sucked by the suction portion 23, it moves toward the outlet 1 b side at a predetermined speed. As a result, the object to be processed 100a moves along the continuous conveying path 2. Regarding the moving speed, the carrying path 2a and the carrying path The diameter 2c moves at a relatively high speed, and the conveying path 2b in the irradiation area moves at a relatively low speed according to the scanning speed during the manufacturing process.

被處理體100a由照射區域搬運路徑2b一邊相對地掃描雷射光42一邊進行照射,從而被處理體100a的必要區域受到退火處理。在退火處理後的被處理體100a藉由連續搬運路徑2而搬運至搬出口1b附近時,解除吸附部23的吸附,使升降部22下降。被處理體100a如所述般藉由搬出裝置14立即自處理室1搬出至搬出室15。 The object 100a is irradiated by the irradiation area conveyance path 2b while scanning the laser light 42 relatively, so that the necessary area of the object 100a is subjected to annealing treatment. When the to-be-processed body 100a after the annealing process is conveyed to the vicinity of the delivery port 1b through the continuous conveying path 2, the suction of the suction part 23 is released, and the lifting part 22 is lowered. The to-be-processed body 100a is immediately carried out from the processing chamber 1 to the unloading chamber 15 by the unloading device 14 as described above.

此時,滑動部21沿著導件28藉由來回移動而復位移動至搬入口1a側的初始位置,以用於之後的半導體基板的保持。就復位移動時的移動速度而言,以比搬運被處理體時的速度高的速度移動而用於下一個被處理體。 At this time, the slide portion 21 is moved back and forth along the guide 28 to the initial position on the side of the entrance 1a for the subsequent holding of the semiconductor substrate. Regarding the moving speed at the time of reset movement, it moves at a higher speed than the speed at the time of conveying the object to be processed and is used for the next object to be processed.

另外,在進行該些一連串動作時,當下一個被處理體100b被搬入至處理室1內時,利用氣體上浮裝置20而空氣上浮,並且使滑動部25上的升降部26以適當高度升降,藉由吸附部27自背面側吸附被處理體100b,成為懸臂狀態。滑動部25中,當藉由吸附部27進行被處理體100b的吸附時,與所述同樣地以預定的速度向搬出口1b側移動。藉此被處理體100b沿著連續搬運路徑2移動,並藉由雷射光42進行退火處理。經退火處理的被處理體100b藉由連續搬運路徑2而搬運至搬出口1b附近,解除吸附部27的吸附後,使升降部26下降而藉由搬出裝置14立即自處理室1搬出至搬出室15。 In addition, during these series of operations, when the next object to be processed 100b is carried into the processing chamber 1, the air is floated by the gas floating device 20, and the lifting portion 26 on the sliding portion 25 is raised and lowered at an appropriate height. The to-be-processed object 100b is sucked by the suction part 27 from the back side, and it becomes a cantilever state. In the sliding portion 25, when the object to be processed 100b is adsorbed by the adsorption portion 27, it moves toward the outlet 1b side at a predetermined speed in the same manner as described above. Thereby, the object to be processed 100b moves along the continuous conveying path 2 and is subjected to annealing treatment by the laser light 42. The annealed object 100b is transported to the vicinity of the transport outlet 1b through the continuous transport path 2, and after the suction of the suction unit 27 is released, the lifting unit 26 is lowered and immediately transported out of the processing room 1 to the transport room by the transport device 14 15.

滑動部25沿著導件29藉由來回移動而復位移動至搬入口1a側的初始位置,以用於之後的被處理體的保持。就復位移動時的移動速度而言,以比搬運被處理體時的速度高的速度移動而用於下一個被處理體。 The sliding part 25 is moved back and forth along the guide 29 to the initial position on the side of the loading port 1a, and is used to hold the object to be processed later. Regarding the moving speed at the time of reset movement, it moves at a higher speed than the speed at the time of conveying the object to be processed and is used for the next object to be processed.

下一個被處理體在被搬入至處理室1內後,由滑動部21側的吸附部23吸附而向搬出口1b側搬運。藉由重複所述程序,而如圖5所示,可將被處理體100a、被處理體100b連續地搬入至處理室內,進行退火處理、搬出處理。 After the next object to be processed is carried into the processing chamber 1, it is sucked by the suction portion 23 on the side of the sliding portion 21 and transported toward the outlet 1 b. By repeating the above procedure, as shown in FIG. 5, the object to be processed 100 a and the object to be processed 100 b can be continuously carried into the processing chamber, and annealed and unloaded.

所述各動作可藉由未圖示的控制部而控制,且可一邊使搬入裝置、搬出裝置及移動手段同步一邊藉由控制部來控制動作。控制部包含中央處理單元(central processing unit,CPU)、使該CPU執行規定動作的程式、記憶動作參數的記憶部等。 The above operations can be controlled by a control unit (not shown), and the operations can be controlled by the control unit while synchronizing the carrying-in device, the carrying-out device, and the moving means. The control unit includes a central processing unit (central processing unit, CPU), a program that causes the CPU to perform a predetermined operation, and a memory unit that stores operation parameters.

先前,相對於退火處理,搬入搬出半導體基板所需的時間為退火處理時間的約1/4。本件實施形態中,搬入、搬出所需的時間大致為零,藉此生產性提高約25%。 Previously, the time required for carrying in and out the semiconductor substrate relative to the annealing process was about 1/4 of the annealing process time. In this embodiment, the time required for carrying in and carrying out is substantially zero, thereby increasing productivity by about 25%.

如所述般,可設置多個移動手段,且使各自在不同的時期進行移動動作,藉此無須使多個被處理體待機從而可有效率地進行搬運。 As described above, it is possible to provide a plurality of moving means and make each move at a different time, whereby it is not necessary to wait for a plurality of objects to be processed, and it is possible to carry them efficiently.

本申請案發明中,可如所述般進行有效率的處理,即便在雷射光的振盪動作中亦具有效率提高的效果。 In the invention of the present application, efficient processing can be performed as described above, and it has an effect of improving efficiency even in the oscillation operation of laser light.

圖6是表示現有裝置的雷射光源的振盪動作的圖。在照射製程期間,需要對處理室內進行半導體基板的搬入處理及搬出處理。 FIG. 6 is a diagram showing the oscillation operation of the laser light source of the conventional device. During the irradiation process, the semiconductor substrate needs to be carried in and out of the processing chamber.

為了在雷射振盪中加以穩定的運用,而需要維持連續的振盪狀態。因此,於搬運時間等無助於生產的時間內雷射亦需要持續振盪。因此,雷射退火裝置中,持續進行雷射振盪,且在必要時將雷射光42通過光學系統構件而導入至處理室1內。另一方面,內封於準分子雷射等的氣體會因雷射的振盪次數而劣化,故需要定期地更換氣體。 In order to use the laser oscillation stably, it is necessary to maintain a continuous oscillation state. Therefore, the laser also needs to continue to oscillate during the transportation time and other times that are not conducive to production. Therefore, in the laser annealing apparatus, laser oscillation is continuously performed, and the laser light 42 is introduced into the processing chamber 1 through the optical system member when necessary. On the other hand, gas enclosed in an excimer laser or the like deteriorates due to the number of laser oscillations, so it is necessary to replace the gas periodically.

圖6的現有例中,照射製程期間需要搬入、搬出的時間,因其間亦持續進行雷射光源的振盪,故無用的振盪增多,而生產性差。 In the conventional example of FIG. 6, the time required for carrying in and carrying out during the irradiation process is continuously oscillated by the laser light source during this period, so unnecessary vibration increases and the productivity is poor.

圖7表示本實施形態的時序圖的圖,且表示對三個基板進行處理的示例,半導體基板的搬出、搬入幾乎能夠在其他半導體基板的照射製程中進行,從而可極力減小無用的振盪時間而提高生產性。 7 is a diagram showing a timing chart of the present embodiment, and shows an example of processing three substrates. The semiconductor substrate can be carried out and carried out almost in the irradiation process of other semiconductor substrates, thereby reducing unnecessary oscillation time as much as possible And improve productivity.

另外,所述各實施形態中,對雷射光的長邊寬度為基板一個邊長的情況進行了說明。因此,藉由使半導體基板向一個方向移動,而可相對地掃描雷射光並完成退火處理。然而,亦有雷射光長邊寬度未達到基板的一個邊長的情況。 In addition, in the above embodiments, the case where the long side width of the laser light is one side of the substrate has been described. Therefore, by moving the semiconductor substrate in one direction, the laser light can be relatively scanned and the annealing process can be completed. However, there are also cases where the long side width of the laser light does not reach one side length of the substrate.

以下,根據圖8對雷射光長邊寬度為基板的1/2邊長的情況進行說明。 Hereinafter, a case where the long side width of the laser light is 1/2 the side length of the substrate will be described based on FIG. 8.

處理室1內,並列設置著向一個方向搬運半導體基板的連續搬運路徑200a、及向與所述方向相反的方向搬運半導體基板的連續搬運路徑200b。該例中,在連續搬運路徑200a的搬運方向 上游側具有搬入口1a。連續搬運路徑200b的搬運方向上游側位於連續搬運路徑200a的搬運方向下游側,搬出口1b位於連續搬運路徑200b的搬運方向下游側。在連續搬運路徑200a的搬運方向下游側與連續搬運路徑200b的搬運方向上游側之間,具有跨越兩搬運路徑而搬運被處理體的連續搬運路徑。另外,本實施形態中,為了將搬入至處理室1的被處理體100加以區分,而依序表示為被處理體100a、被處理體100b、被處理體100c、被處理體100d。 In the processing chamber 1, a continuous transport path 200a for transporting semiconductor substrates in one direction and a continuous transport path 200b for transporting semiconductor substrates in the opposite direction to the above direction are provided in parallel. In this example, in the conveying direction of the continuous conveying path 200a The upstream side has a transfer port 1a. The upstream side in the conveyance direction of the continuous conveyance path 200b is located on the downstream side in the conveyance direction of the continuous conveyance path 200a, and the exit 1b is located on the downstream side in the conveyance direction of the continuous conveyance path 200b. Between the downstream side in the conveyance direction of the continuous conveyance path 200a and the upstream side in the conveyance direction of the continuous conveyance path 200b, there is a continuous conveyance path that conveys the object to be processed across the two conveyance paths. In addition, in this embodiment, in order to distinguish the to-be-processed body 100 carried into the processing chamber 1, it is shown as the to-be-processed body 100a, the to-be-processed body 100b, the to-be-processed body 100c, and the to-be-processed body 100d sequentially.

在連續搬運路徑200a上,以所搬入的被處理體100的搬運方向為基準而向左側照射雷射光42a。雷射光42a的照射區域上方設置著局部氣體密封部3a,該局部氣體密封部3a對雷射光42a的照射區域及其周圍噴射氮氣等而進行密封。 On the continuous conveyance path 200a, the laser light 42a is irradiated to the left side based on the conveyance direction of the loaded object to be carried 100 as a reference. A local gas sealing portion 3a is provided above the irradiation area of the laser light 42a, and the local gas sealing portion 3a sprays nitrogen gas or the like to the irradiation area of the laser light 42a and its surroundings to seal.

連續搬運路徑200b上,以所搬入的被處理體100的搬運方向為基準而向右側照射雷射光42b。雷射光42b的照射區域上方設置著局部氣體密封部3b,該局部氣體密封部3b對雷射光42b的照射區域及其周圍噴射氮氣等並進行密封。 On the continuous conveyance path 200b, the laser light 42b is irradiated to the right side based on the conveyance direction of the loaded object to be carried 100 as a reference. A local gas sealing portion 3b is provided above the irradiation area of the laser light 42b, and the local gas sealing portion 3b sprays and seals the irradiation area of the laser light 42b and its surroundings with nitrogen gas or the like.

圖中,藉由未圖示的搬入裝置而最初搬入至搬入口1a的被處理體100a,與圖中的被處理體100d同樣地,由連續搬運路徑200a搬運,且一邊由局部氣體密封部3a噴射局部氣體並進行密封,一邊被照射雷射光42a,搬運方向左側受到退火處理。被處理體100a與圖中的被處理體100c同樣地到達搬運路徑2a的搬運方向下游端,與圖中的被處理體100b同樣地,向連續搬運路徑200b的搬運方向上游側搬運,且藉由連續搬運路徑200b向下游側 搬運。 In the figure, the to-be-processed body 100a initially carried into the loading port 1a by a not-shown unloading device is transported by the continuous transport path 200a similar to the to-be-processed body 100d in the figure, and the local gas seal portion 3a The local gas is injected and sealed, while being irradiated with the laser light 42a, the left side in the conveying direction is annealed. The object to be processed 100a reaches the downstream end in the conveying direction of the conveying path 2a like the object to be processed 100c in the figure, and is conveyed to the upstream side in the conveying direction of the continuous conveying path 200b like the object to be processed 100b in the figure, and by Continuous conveying path 200b to the downstream side Handling.

沿連續搬運路徑200b搬運的被處理體100a,一邊由局部氣體密封部3b噴射局部氣體而雷射光照射區域及其周邊被密封,一邊對被處理體100a照射雷射光42b,搬運方向右側受到退火處理。藉由連續搬運路徑200a上的退火處理與連續搬運路徑200b上的退火處理,被處理體100a的所需區域均受到退火處理。 The object to be processed 100a transported along the continuous transport path 200b is irradiated with laser light 42b to the object to be processed 100a while being irradiated with laser light by the local gas sealing portion 3b and the laser irradiation area and its periphery are sealed. . By the annealing process on the continuous conveyance path 200a and the annealing process on the continuous conveyance path 200b, the required regions of the object to be processed 100a are all subjected to the annealing process.

被處理體100a如圖8所示,到達連續搬運路徑200b的搬運方向下游端,利用未圖示的搬出裝置通過搬出口1b而搬出至處理室1外。 As shown in FIG. 8, the object to be processed 100a reaches the downstream end in the conveying direction of the continuous conveying path 200b, and is carried out of the processing chamber 1 through the outlet 1b by a carrying-out device (not shown).

利用所述程序,依序搬入、搬運被處理體100b、被處理體100c、被處理體100d,並連續地進行退火處理。即便在雷射光長邊寬度未達到半導體基板的一個邊長的情況下,亦可跨及基板的整個寬度進行退火處理。 With the above program, the object to be processed 100b, the object to be processed 100c, and the object to be processed 100d are sequentially carried in and carried out, and the annealing treatment is continuously performed. Even in the case where the long side width of the laser light does not reach one side length of the semiconductor substrate, annealing treatment can be performed across the entire width of the substrate.

另外,在連續搬運路徑為兩個搬運路徑且未對基板的一個邊長處理完的情況下,可增加連續搬運路徑的並行數量而同樣地加以對應。 In addition, when the continuous conveyance path is two conveyance paths and one side of the substrate is not processed, the parallel number of the continuous conveyance paths can be increased to correspond to the same.

另外,所述實施形態中,未改變被處理體的朝向而使連續搬運路徑200a架在連續搬運路徑200b上,亦可改變被處理體的朝向來進行搬運。 In addition, in the above embodiment, the continuous conveying path 200a is placed on the continuous conveying path 200b without changing the direction of the object to be processed, and the direction of the object to be processed can also be changed for carrying.

所述各實施形態中,已對連續搬運路徑跨及全長而具備氣體懸浮裝置的情況進行了說明,但本發明並非必须具備氣體上浮裝置,而且,亦可僅在連續搬運路徑的一部分,例如照射區域 搬運路徑2b進行氣體上浮。 In each of the above-mentioned embodiments, the case where the continuous conveying path spans the entire length and the gas levitation device is described has been described, but the present invention does not necessarily need to have a gas floating device, and it may be only a part of the continuous conveying path, for example, irradiation area The conveying path 2b floats the gas.

圖9(A)、圖9(B)表示本實施形態的連續搬運路徑2d。搬入搬運路徑2a及搬出搬運路徑2c中,例如,將在與搬運方向正交的方向上具有旋轉軸的遊動狀態的旋轉輥20a在搬運方向上隔開間隔而配置,可對被處理體進行支持。因此,旋轉輥20a構成本發明的支持手段。旋轉輥20a亦可進行旋轉驅動,但理想的是另外具有所述移動手段。 9(A) and 9(B) show the continuous conveying path 2d of this embodiment. In the carrying-in conveying path 2a and the carrying-out conveying path 2c, for example, the rotating rollers 20a having a rotational axis in a direction orthogonal to the conveying direction are arranged at intervals in the conveying direction to support the object to be processed . Therefore, the rotating roller 20a constitutes the supporting means of the present invention. The rotating roller 20a can also be driven to rotate, but it is desirable to additionally have the moving means.

搬入至搬入搬運路徑2a的被處理體由旋轉輥20a支持,且藉由移動手段在搬運方向上移動。被處理體在到達照射區域搬運路徑2b時由氣體上浮裝置20支持,然後,在到達搬出搬運路徑2c時,與搬入搬運路徑2a同樣地,一邊由旋轉輥20a支持,一邊由移動手段搬運。 The object to be transported into the transport path 2a is supported by the rotating roller 20a and is moved in the transport direction by moving means. The object to be processed is supported by the gas floating device 20 when it reaches the irradiation area transport path 2b. Then, when it reaches the transport path 2c, it is transported by the moving means while being supported by the rotating roller 20a in the same manner as the transport path 2a.

關於被處理體的支持,除照射區域搬運路徑2b以外,不要求如照射區域搬運路徑2b般的穩定的支持或平坦性,因而亦可由與照射區域搬運路徑2b的被處理體的支持不同的構成來支持被處理體。 The support of the object to be processed does not require stable support or flatness like the irradiation area transport path 2b except for the irradiation area transport path 2b, and therefore may be configured differently from the support of the object to be processed in the irradiation area transport path 2b To support the processed body.

以上,基於所述實施形態對本發明進行了說明,但只要不脫離本發明的範圍則可進行適當的變更。 The present invention has been described above based on the above-mentioned embodiments, but appropriate changes can be made as long as they do not depart from the scope of the present invention.

1:處理室(雷射退火裝置) 1: Processing room (laser annealing device)

1a:搬入口 1a: moving entrance

1b:搬出口 1b: moving out

2:連續搬運路徑 2: Continuous transportation path

2a:搬入搬運路徑 2a: moving into the transportation path

2b:照射區域搬運路徑 2b: Transportation path of irradiation area

2c:搬出搬運路徑 2c: Moving out of the transportation path

3:局部氣體密封部 3: Local gas seal

20:氣體上浮裝置 20: Gas floating device

42:雷射光 42: Laser light

100a、100b、100c:被處理體 100a, 100b, 100c: body to be processed

Claims (15)

一種雷射退火裝置,對被處理體照射雷射光而進行退火處理,所述雷射退火裝置的特徵在於包括:連續搬運路徑,能夠在一個規定的搬運方向上同時連續地搬運多個所述被處理體;以及雷射光照射手段,對由所述連續搬運路徑搬運的所述被處理體照射所述雷射光,其中所述雷射光在照射製程期間以外亦持續振盪,所述連續搬運路徑包括:支持手段,對所述被處理體進行支持;以及移動手段,具有升降部,所述升降部於所述支持手段的兩側支持由所述支持手段所支持的所述被處理體且使所述被處理體沿著搬運方向移動、並能夠上下地調整支持位置,所述支持手段為藉由氣體的向上方噴出而使所述被處理體上浮並進行支持的氣體上浮手段。 A laser annealing device irradiates a laser beam on an object to be annealed. The laser annealing device is characterized by including a continuous conveying path capable of simultaneously conveying a plurality of the objects continuously in a predetermined conveying direction A processing body; and laser light irradiation means for irradiating the laser beam to the object to be processed carried by the continuous conveying path, wherein the laser light continues to oscillate outside the irradiation process, the continuous conveying path includes: Supporting means for supporting the object to be processed; and moving means having an elevating section which supports the object to be processed supported by the supporting means on both sides of the supporting means and causes the The object to be processed moves in the conveying direction, and the support position can be adjusted up and down. The support means is a gas floating means that floats and supports the object to be treated by the upward ejection of gas. 如申請專利範圍第1項所述的雷射退火裝置,其包括:處理室,被照射所述雷射光;搬入口,位於所述連續搬運路徑的上游側且設置於所述處理室;以及搬出口,位於所述連續搬運路徑的下游側且設置於所述處理室,所述連續搬運路徑位於自所述搬入口到所述搬出口。 The laser annealing apparatus as described in item 1 of the patent application scope, which includes: a processing chamber irradiated with the laser light; a transport entrance located on the upstream side of the continuous transport path and provided in the processing chamber; The outlet is located on the downstream side of the continuous transportation path and is provided in the processing chamber, and the continuous transportation path is located from the loading inlet to the loading outlet. 如申請專利範圍第1項或第2項所述的雷射退火裝置, 其中所述連續搬運路徑包括:照射區域搬運路徑,一邊對所述被處理體照射所述雷射光一邊搬運所述被處理體;以及搬出搬入搬運路徑,位於所述照射區域搬運路徑的上游側及下游側,所述搬出搬入搬運路徑能夠以比所述照射區域搬運路徑中的搬運速度大的搬運速度進行所述被處理體的搬運。 The laser annealing device as described in item 1 or item 2 of the patent scope, The continuous transport path includes: an irradiation area transport path, which transports the object while irradiating the laser beam to the object; and an unloading transport path, which is located on the upstream side of the irradiation area transport path and On the downstream side, the unloading and carrying transport path can transport the object to be processed at a transport speed higher than that in the irradiation area transport path. 如申請專利範圍第3項所述的雷射退火裝置,其中所述搬出搬入搬運路徑中的搬運速度為可變。 The laser annealing apparatus as described in item 3 of the patent application range, wherein the conveying speed in the carrying-in and carrying-out conveying path is variable. 如申請專利範圍第4項所述的雷射退火裝置,其中所述搬出搬入搬運路徑至少能夠以與所述照射區域搬運路徑相同的搬運速度或比所述搬運速度大的搬運速度進行搬運。 The laser annealing apparatus according to item 4 of the patent application range, wherein the unloading/carrying transport path can be transported at least at the same transport speed as the transport path of the irradiation area or a transport speed greater than the transport speed. 如申請專利範圍第1項或第2項所述的雷射退火裝置,其中所述氣體上浮手段使用惰性氣體來作為所述氣體。 The laser annealing apparatus according to item 1 or 2 of the patent application range, wherein the gas floating means uses an inert gas as the gas. 如申請專利範圍第1項或第2項所述的雷射退火裝置,其中所述移動手段在將所述被處理體向所述連續搬運路徑的下游側搬運後,能夠復位移動至所述連續搬運路徑的上游側。 The laser annealing apparatus according to item 1 or 2 of the patent application range, wherein the moving means can return to the continuous after the object to be processed is conveyed downstream of the continuous conveying path The upstream side of the transportation path. 如申請專利範圍第1項或第2項所述的雷射退火裝置,其包括局部氣體密封部,所述局部氣體密封部噴射至少覆蓋所述連續搬運路徑中被照射所述雷射光的所述被處理體的表面區域的局部氣體。 The laser annealing device according to item 1 or item 2 of the patent application scope, which includes a local gas sealing portion that sprays at least the portion of the continuous conveying path that is irradiated with the laser light Local gas in the surface area of the body to be treated. 如申請專利範圍第8項所述的雷射退火裝置,其中所述局部氣體為惰性氣體。 The laser annealing device as described in item 8 of the patent application range, wherein the local gas is an inert gas. 如申請專利範圍第8項所述的雷射退火裝置,其中除所述局部氣體外的環境氣體為空氣。 The laser annealing device as described in item 8 of the patent application scope, wherein the ambient gas other than the local gas is air. 一種雷射退火處理用連續搬運路徑,一邊在一個規定的搬運方向上同時連續地搬運多個被處理體一邊進行雷射退火處理,其包括:搬入搬運路徑,向所述連續搬運路徑的一部分且連續搬運路徑的上游側,搬入並搬運被處理體;照射區域搬運路徑,為所述連續搬運路徑的一部分且所述搬入搬運路徑的下游側,一邊搬運經過所述搬入搬運路徑的多個所述被處理體一邊對所述被處理體照射雷射光而進行退火處理,其中所述雷射光在照射製程期間以外亦持續振盪;以及搬出搬運路徑,為所述連續搬運路徑的一部分且所述照射區域搬運路徑的下游側,搬運並搬出經過所述退火處理的所述被處理體,所述連續搬運路徑在至少所述照射區域搬運路徑,一邊藉由利用支持手段而氣體的向上方噴出使所述被處理體上浮,一邊藉由具有升降部的移動手段使所述被處理體沿著搬運方向移動,所述升降部於所述支持手段的兩側支持由所述支持手段所支持的所述被處理體且使所述被處理體移動、並能夠上下地調整支持位置。 A continuous transport path for laser annealing processing, which performs laser annealing processing while simultaneously transporting a plurality of to-be-processed objects in a predetermined transport direction simultaneously, includes: a transport transport path, a part of the continuous transport path and The upstream side of the continuous transport path carries and transports the object to be processed; the irradiation area transport path is a part of the continuous transport path and is on the downstream side of the transport path, while transporting a plurality of the The object to be processed is annealed by irradiating the object with laser light, wherein the laser light continues to oscillate outside the irradiation process; and the transport path is part of the continuous transport path and the irradiation area On the downstream side of the transport path, the object to be processed that has undergone the annealing treatment is transported and transported out. The continuous transport path is at least the irradiation area transport path, and the gas is ejected upward by using support means to cause the The to-be-processed body floats while moving the to-be-processed body along the conveying direction by a moving means having an elevating portion, and the elevating portion supports the object supported by the supporting means on both sides of the supporting means The processing body moves the processing body and can adjust the support position up and down. 如申請專利範圍第11項所述的雷射退火處理用連續 搬運路徑,其中能夠使所述搬入搬運路徑及所述搬出搬運路徑中的搬運速度比所述照射區域搬運路徑中的搬運速度大地搬運所述被處理體。 The laser annealing process described in item 11 of the patent application scope is continuous A conveyance path, wherein the conveyance speed in the carry-in conveyance path and the carry-out conveyance path can be greater than the conveyance speed in the irradiation area conveyance path to convey the object to be processed. 一種雷射光照射手段,其特徵在於包括:雷射光源,輸出雷射光;以及光學系統構件,對藉由在一個規定的搬運方向上搬運被處理體的連續搬運路徑同時連續地搬運多個的被處理體、並到達所述連續搬運路徑的照射區域的被處理體,導引在照射製程期間以外亦持續振盪的所述雷射光,相對地進行掃描並加以照射,所述連續搬運路徑包括具有藉由氣體的向上方噴出而使所述被處理體上浮並進行支持的氣體上浮手段、以及具有升降部的移動手段,所述升降部於所述氣體上浮手段的兩側支持由所述氣體上浮手段所支持的所述被處理體且使所述被處理體沿著搬運方向移動、並能夠上下地調整支持位置。 A laser light irradiation method, characterized by comprising: a laser light source that outputs laser light; and an optical system member, which continuously transports a plurality of objects simultaneously through a continuous transport path that transports the object to be processed in a predetermined transport direction The processing body and the object to be processed reaching the irradiation area of the continuous transport path guides the laser light that continues to oscillate outside of the irradiation process period to scan and illuminate it relatively. The continuous transport path includes A gas floating means that lifts and supports the to-be-processed body by ejecting gas upward and a moving means having a lifting section that supports the gas floating means on both sides of the gas floating means The to-be-processed body supported can move the to-be-processed body along a conveyance direction, and the support position can be adjusted up and down. 一種雷射退火處理方法,一邊藉由在一個規定的方向上同時連續地搬運多個被處理體的連續搬運路徑搬運所述被處理體,一邊對所述被處理體照射雷射光而進行退火處理,所述雷射退火處理方法包括:搬入搬運步驟,向所述連續搬運路徑的一部分且連續搬運路徑的上游側,搬入並搬運被處理體;退火處理步驟,在所述連續搬運路徑的一部分且進行了所述搬入搬運步驟的連續搬運路徑的下游側,一邊搬運所述被處理體一邊照射所述雷射光而進行退火處理,其中所述雷射光在照射製 程期間以外亦持續振盪;以及搬出搬運步驟,在所述連續搬運路徑的一部分且進行了所述退火處理的連續搬運路徑的下游側,搬運並搬出所述被處理體,所述連續搬運路徑在所述各步驟中的至少所述退火處理步驟中,一邊藉由利用支持手段而氣體的向上方噴出使所述被處理體上浮,一邊藉由具有升降部的移動手段使所述被處理體沿著搬運方向移動,所述升降部於所述支持手段的兩側支持由所述支持手段所支持的所述被處理體、並能夠上下地調整支持位置。 A laser annealing method that irradiates laser light to the object to be annealed while conveying the object to be processed through a continuous transport path that simultaneously transports a plurality of objects to be processed simultaneously in a predetermined direction The laser annealing treatment method includes: a carrying-in conveying step, carrying and conveying the object to be processed to a part of the continuous conveying path and the upstream side of the continuous conveying path; an annealing processing step, at a part of the continuous conveying path and On the downstream side of the continuous conveying path where the carry-in conveying step is performed, the laser beam is irradiated and annealed while carrying the object to be processed, wherein the laser light is It also continues to oscillate outside the process period; and a carry-out conveying step, which conveys and carries out the object to be processed on the downstream side of the continuous conveying path that is part of the continuous conveying path and subjected to the annealing treatment, and the continuous conveying path is at In at least the annealing step in each of the steps, while the gas is ejected upward by the supporting means to float the object to be processed, the object to be processed is moved along by the moving means having an elevating portion Moving in the conveying direction, the elevating section supports the object to be processed supported by the supporting means on both sides of the supporting means, and can adjust the supporting position up and down. 如申請專利範圍第14項所述的雷射退火處理方法,其中能夠使所述搬入搬運步驟及所述搬出搬運步驟中的所述連續搬運路徑的搬運速度比所述退火處理步驟中的所述連續搬運路徑的搬運速度大地進行搬運。 The laser annealing processing method according to item 14 of the patent application scope, wherein the continuous conveying path in the carrying-in conveying step and the carrying-out conveying step can be conveyed at a speed faster than that in the annealing processing step The conveying speed of the continuous conveying path is large.
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