TWI692857B - Semiconductor device and biometric identification apparatus - Google Patents

Abstract

A semiconductor device includes a substrate and a light collimator layer. The substrate has a plurality of pixels. The light collimator layer is disposed on the substrate, and the light collimator layer includes a transparent material layer, a first light-shielding layer, a second light-shielding layer and a plurality of transparent pillars. The transparent material layer covers the pixels. The first light-shielding layer is disposed on the substrate and the first light-shielding layer has a plurality of holes corresponding to the pixels. The second light-shielding layer is disposed on the first light-shielding layer. The transparent pillars are disposed in the second light-shielding layer.

Description

Semiconductor device and biometric device

The embodiments of the present invention relate to a semiconductor device, and particularly to a semiconductor device including a light collimator layer.

Semiconductor devices can be used in various applications. For example, the semiconductor device may be used as a biometric device (eg, at least a part of a fingerprint recognition device, a face recognition device, an iris recognition device, etc.). The biometric device can be composed of a large number of optical elements. For example, the above optical element may include a light collimator.

The optical collimator can be used to collimate light to reduce energy loss caused by light divergence. Therefore, the optical collimator can be applied to, for example, a biometrics recognition device (for example, a fingerprint recognition device) to increase its recognition performance.

However, the existing light collimator and its forming method are not satisfactory in all aspects.

Embodiments of the present invention include a semiconductor device. The aforementioned semiconductor device includes a substrate and a light collimating layer. The substrate has a plurality of pixels. The light collimating layer is disposed on the substrate, and the light collimating layer includes a transparent material layer, a first shading layer, a second shading layer and Plural transparent cylinders. The transparent material layer covers the pixels. The first light shielding layer is disposed on the substrate, and the first light shielding layer has a plurality of holes corresponding to the pixels. The second light shielding layer is disposed on the first light shielding layer. The transparent cylinder is disposed in the second light shielding layer.

Embodiments of the present invention also include a semiconductor device. The aforementioned semiconductor device includes a substrate and a light collimating layer. The substrate has a plurality of pixels. The light collimating layer is disposed on the substrate, and the light collimating layer includes a plurality of light-shielding layers and transparent material layers. The light shielding layer is disposed on the substrate, and each light shielding layer has a plurality of holes corresponding to pixels. The transparent material layer is disposed between the shading layers and fills the holes.

10, 10’, 10”: Biometric device

100, 100’, 100”: semiconductor devices

101: substrate

101T: substrate top surface

101B: substrate bottom surface

102: The first material

104, 204, 304: first shading layer

106: Transparent material

108: transparent material layer

110: transparent cylinder

112: Second material

114, 214-1, 314-1: second light-shielding layer

116, 216: optical collimation layer

118: color filter layer

120, 220: light source layer

122: Light source

124: Cover

202: shading material

214-2, 314-2: third shading layer

208, 308: transparent material layer

208-1, 308-1: pad height

208-2, 308-2: Partition

FP: fingerprint

H1: height

L, L1: light

P: Pixel

O1, O2, O3: holes

T1, T2, T1’, T2’, T3’, T4, T5: thickness

W1, W2: width

The embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that the various feature parts are not drawn to scale and are used for illustration only. In fact, the size of the element may be enlarged or reduced to clearly show the technical features of the embodiments of the present invention.

FIGS. 1A, 1B, 1C, 1D, 1E, 1F, and 1G are a series of cross-sectional views illustrating a method of forming a semiconductor device according to an embodiment of the invention.

Figure 1G' depicts a top view of the steps of Figure 1G according to some embodiments of the invention.

FIG. 2 is a schematic diagram of applying the semiconductor device of the embodiment of the present invention to a biometrics identification device.

FIGS. 3A, 3B, 3C, 3D, 3E, and 3F are a series of cross-sectional views illustrating a method of forming a semiconductor device according to another embodiment of the invention.

FIG. 4 is a schematic diagram of applying the semiconductor device of the embodiment of the present invention to a biometric device.

FIG. 5 is a schematic diagram of applying the semiconductor device of the embodiment of the present invention to a biometrics identification device.

The following disclosure provides many different embodiments or examples to implement the different features of this case. The following disclosure describes specific examples of various components and their arrangement to simplify the description. Of course, these specific examples are not meant to be limiting. For example, if an embodiment of the present invention describes a first feature part formed on or above a second feature part, it means that it may include an embodiment in which the first feature part is in direct contact with the second feature part, or It may include an embodiment in which additional feature parts are formed between the first feature part and the second feature part, so that the first feature part and the second feature part may not be in direct contact.

It should be understood that additional operating steps may be implemented before, during, or after the method, and in other embodiments of the method, some of the operating steps may be replaced or omitted.

In addition, space-related terms may be used, such as "below", "below", "lower", "above", "above", "higher" and similar These spatially related terms are used to describe the relationship between one (s) element or feature part and another (s) element or feature part in the diagram, these spatially related terms include in use or in operation Different orientations of the device and the orientation described in the drawings. When the device is turned to different orientations (rotated 90 degrees or other orientations), the spatially related adjectives used in it will also be interpreted according to the turned orientation.

Unless otherwise defined, all terms used here (including technical and scientific (Learning terms) has the same meaning as commonly understood by the general artisans in this article. Understandably, these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present invention, and should not be interpreted in an idealized or excessively formal manner Interpretation, unless specifically defined in the embodiments of the present invention.

Different embodiments disclosed below may reuse the same reference symbols and/or marks. These repetitions are for simplicity and clarity, and are not intended to limit the specific relationships between the different embodiments and/or structures discussed.

The light collimating layer of the semiconductor device of the embodiment of the present invention includes a plurality of light-shielding layers with holes having different cross-sectional areas. Since these light-shielding layers are provided in the light collimating layer, and a transparent material layer can be provided in conjunction, the transparent cylinder of the light collimating layer can have a small aspect ratio, thereby avoiding or reducing The transparent column collapses, and at the same time, the light collimating layer maintains good collimating performance. The embodiment shown in FIGS. 1A to 1G' will be described below.

FIGS. 1A, 1B, 1C, 1D, 1E, 1F, and 1G are a series of cross-sectional views illustrating a method of forming a semiconductor device 100 according to an embodiment of the invention. Figure 1G' depicts a top view of the steps of Figure 1G according to some embodiments of the invention.

First, according to some embodiments, as shown in FIG. 1A, a substrate 101 is provided. The substrate 101 may have a top surface 101T and a bottom surface 101B opposite to the top surface 101T.

In some embodiments, the substrate 101 may be made of elemental semiconductor (eg, silicon or germanium), compound semiconductor (eg, silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide) (InAs) or indium phosphide (InP)), alloy semiconductors (for example: SiGe, SiGeC, GaAsP, or GaInP), other suitable semiconductors, or a combination of the foregoing. In some embodiments, the substrate 101 may be a semiconductor-on-insulator (SOI) substrate. The semiconductor substrate on the insulating layer may include a bottom plate, a buried oxide layer provided on the bottom plate, and a semiconductor layer provided on the buried oxide layer. In some embodiments, the substrate 101 may be a semiconductor wafer (for example, a silicon wafer or other suitable semiconductor wafer).

In some embodiments, the substrate 101 may include various p-type doped regions and/or n-type doped regions formed by ion implantation and/or diffusion processes. For example, the aforementioned doped regions may be configured to form transistors, photodiodes, and/or light-emitting diodes, but the embodiments of the present invention are not limited thereto.

In some embodiments, the substrate 101 may include various isolation features to separate different device regions in the substrate 101. For example, the isolation features may include shallow trench isolation (STI) features, but the embodiments of the present invention are not limited thereto. In some embodiments, the step of forming a shallow trench isolation may include etching a trench in the substrate 101 and filling the trench with an insulating material (eg, silicon oxide, silicon nitride, or silicon oxynitride) . The filled trench may have a multi-layer structure (for example, a thermal oxide liner and silicon nitride filled in the trench). A chemical mechanical polishing (CMP) process can be performed to polish excess insulating material and planarize the upper surface of the isolation features.

In some embodiments, the substrate 101 may include various conductive features (eg, conductive lines or vias). For example, the aforementioned conductive features may be made of aluminum (Al), copper (Cu), tungsten (W), their respective alloys, and other suitable conductive materials Or a combination of the above.

In the embodiment shown in FIG. 1A, the substrate 101 may include a plurality of pixels P. In some embodiments, the plurality of pixels P of the substrate 101 may be arranged in an array, but the embodiment of the present invention is not limited thereto.

In some embodiments, one pixel P of the substrate 101 includes or corresponds to at least one photodiode and/or other suitable elements, which can convert the received optical signal into a current signal.

Next, as shown in FIG. 1B, according to some embodiments, the first material 102 is disposed on the top surface 101T of the substrate 101. In this embodiment, the first material 102 is a metal, such as copper (Cu), silver (Ag), etc., but the embodiment of the present invention is not limited thereto. In other embodiments, the first material 102 may be photoresist (eg, black photoresist or other suitable non-transparent photoresist), ink (eg, black ink or other suitable non-transparent ink), molding compound ( molding compound) (for example, black molding compound or other suitable non-transparent molding compound), solder mask (for example, black solder protective material or other suitable non-transparent solder resist material), epoxy Resin, other suitable materials or a combination of the aforementioned materials. In some embodiments, the first material 102 may be a photo-curable material, a thermal-curable material, or a combination of the foregoing materials.

Next, as shown in FIG. 1C, a patterning process may be performed to pattern the first material 102 to form a first light-shielding layer 104 that directly contacts the top surface 101T of the substrate 101. In detail, the aforementioned patterning process removes part of the first material 102 to form the first light-shielding layer 104 having a plurality of holes O1 corresponding to the pixel P. In some embodiments, the foregoing patterning process includes soft baking (soft baking), mask aligning (mask alignment), exposure (exposure), post-exposure baking (post-exposure baking), Developing, rinsing, drying, other suitable steps or a combination of the preceding steps.

Next, as shown in FIG. 1D, the transparent material 106 is provided on the top surface 101T of the substrate 101. For example, the transparent material 106 may be transparent photoresist, polyimide, epoxy resin, other suitable materials, or a combination of the foregoing materials. In the subsequent process, the transparent material 106 can be used to form the transparent material layer and the transparent pillar (for example, the transparent material layer 108 and the transparent pillar 110 described later), which will be described in detail later.

In some embodiments, the transparent material 106 may include a photo-curable material, a thermal-curable material, or a combination of the foregoing. For example, a spin-on coating process may be used to coat the transparent material 106 on the first light-shielding layer 104 and the substrate 101, but the embodiments of the present invention are not limited thereto.

Next, as shown in FIG. 1E, a patterning process is performed to pattern the transparent material 106 to form a transparent material layer 108 and a plurality of transparent pillars 110. In detail, the aforementioned patterning process removes part of the transparent material 106, and the transparent material 106 remaining on the substrate 101 (and corresponding to the plurality of holes O1 of the pixel P) becomes the transparent material layer 108 and the plurality of transparent pillars体110。 110. Similarly, in some embodiments, the foregoing patterning process includes soft baking, reticle alignment, exposure, post-exposure baking, development, rinsing, drying, other suitable steps, or a combination of the foregoing steps.

As shown in FIG. 1E, in this embodiment, the transparent material layer 108 covers the first light-shielding layer 104 and the pixel P, and fills the hole O1 of the first light-shielding layer 104; the transparent pillar 110 is disposed corresponding to the pixel P. In other words, in the embodiment shown in FIG. 1E, the transparent material layer 108 may completely cover (or partially cover) the pixel P. In some embodiments, the transparent material layer 108 (and the first light-shielding layer 104) covering the pixel P can protect the pixel P and reduce or avoid Pixel P is damaged and/or contaminated during the manufacturing process. In some embodiments, the transparent pillars 110 are arranged in an array, but the embodiments of the present invention are not limited thereto.

Next, as shown in FIG. 1F, in some embodiments, the second material 112 is disposed on the top surface of the transparent material layer 108. In some embodiments, the second material 112 may fill the opening between the transparent pillars 110 and cover the transparent pillars 110.

In this embodiment, the first material 102 and the second material 112 are different. For example, the first material 102 may be metal, and the second material 112 may be photoresist (eg, black photoresist or other suitable non-transparent photoresist), ink (eg, black ink or other suitable non-transparent Ink), molding compound (for example, black molding compound or other suitable non-transparent molding compound), solder mask (for example, black solder resistance material or other suitable non-transparent Solder resist material), epoxy resin, other suitable materials or a combination of the foregoing materials. In some embodiments, the second material 112 may be a photo-curable material, a thermal-curable material, or a combination of the foregoing materials. However, the embodiments of the present invention are not limited thereto. In other embodiments, the first material 102 may also be the same as the second material 112, that is, the first material 102 may be photoresist, ink, molding compound, solder resist material, epoxy resin, other suitable materials, or the foregoing materials Of the combination.

Next, as shown in FIG. 1G, the second material 112 may be cured. For example, the above curing process may be a photo curing process, a thermal curing process, or a combination of the above. Next, a planarization process is performed to remove a part of the second material 112 to expose the top surface of the transparent pillar 110 and form the second light-shielding layer 114. In some embodiments, the above planarization process also removes a portion of the transparent pillar 110 (eg, a portion of the top of the transparent pillar 110). For example, the aforementioned planarization process may be a chemical mechanical polishing process, a polishing process, an etch-back process, other suitable processes, or a combination thereof.

In some embodiments, after the aforementioned planarization process, the top surface of the second light-shielding layer 114 and the top surface of the transparent pillar 110 are aligned with each other. That is, after the above planarization process, the top surface of the second light-shielding layer 114 and the top surface of the transparent pillar 110 are coplanar.

In some embodiments, as shown in FIGS. 1G and 1G', the second light-shielding layer 114 surrounds the transparent pillar 110. That is, in the embodiments shown in FIGS. 1G and 1G', the transparent pillar 110 is disposed in the second light-shielding layer 114. In some embodiments, as shown in FIG. 1G', the transparent cylinder 110 has a round top surface. However, the embodiments of the present invention are not limited thereto. In other embodiments, the top surface of the transparent cylinder 110 may be elliptical, oblong, rectangular, hexagonal, irregular, other suitable shapes, or a combination of the aforementioned shapes.

In addition, since the transparent pillars 110 are arranged corresponding to the pixels P, the plurality of transparent pillars 110 also respectively correspond to the plurality of holes O1 of the first light-shielding layer 104. In some embodiments, the width W2 of the transparent pillar 110 is greater than the width W1 of the corresponding hole O1. For example, the width W2 of the transparent pillar 110 may be between 6-20 μm, and the width W1 of the hole O1 may be between 1-10 μm. Here, the width W2 of the transparent cylinder 110 is defined as the maximum width of the cross section of the transparent cylinder 110, and the width W1 of the hole O1 is defined as the maximum width of the cross section of the hole. For example, in this embodiment, the cross section of the transparent cylinder 110 is circular, so the width W2 of the transparent cylinder 110 is the diameter of the circle; the cross section of the hole O1 is circular, so the width W1 of the hole O1 is The diameter of this circle.

In some embodiments, the thickness of the light shielding layer is different from each other. For example, in the embodiment shown in FIG. 1G, the thickness T1 of the first light shielding layer 104 is smaller than the thickness T2 of the second light shielding layer 114. For example, the thickness T1 of the first light-shielding layer 104 may be between 4-20 μm, The thickness T2 of the second light-shielding layer 114 may be between 10 and 90 μm. However, the embodiments of the present invention are not limited thereto.

As shown in FIG. 1G, in some embodiments, the transparent pillar 110, the first light-shielding layer 104, the second light-shielding layer 114, and the transparent material layer 108 together form the light collimating layer 116 of the semiconductor device 100. Here, the space occupied by the transparent pillar 110 can be regarded as a plurality of holes O2 of the second light-shielding layer 114, the holes O2 correspond to the plurality of pixels P, and the cross-sectional area of the hole O1 of the first light-shielding layer 104 is smaller than the first The cross-sectional area of the hole O2 of the two light shielding layers 114.

The size of the hole O1 of the first light-shielding layer 104 and the hole O2 of the second light-shielding layer 114 can be adjusted according to the path of light, to avoid crosstalk between the light in the semiconductor device 100, and the transparent material layer 108 is provided in cooperation. Therefore, The transparent cylinder 110 of the light collimating layer 116 may have a small aspect ratio (for example, the ratio of the height H1 to the width W2 of the transparent cylinder 110 (that is, H1/W2) is 0.5 to 15), thereby To avoid or reduce the collapse of the transparent pillar 110, at the same time, the light collimating layer 116 maintains good collimating performance.

FIG. 2 is a schematic diagram of applying the semiconductor device 100 of the embodiment of the present invention to the biometrics device 10. Here, the biometrics recognition device 10 is, for example, a fingerprint recognition device.

As shown in FIG. 2, in some embodiments, the biometric device 10 includes a semiconductor device 100, a color filter layer 118 and a light source layer 120. The semiconductor device 100 can be formed by the steps of FIGS. 1A to 1G described above. Next, the color filter layer 118 may be disposed on the semiconductor device 100. The color filter layer 118 may be formed of a polymer material or other suitable materials, which is used to restrict the passage of light of a specific wavelength through the color filter layer 118, while the light of other wavelengths is isolated.

Then, the light source layer 120 can be disposed on the color filter layer 118. In some embodiments, the light source layer 120 may include a light source (eg, light emitting diode) 122, and the light sources 122 may be arranged in an array, for example. In addition, the light source layer 120 may further include a barrier layer, other suitable optical elements, or a combination of the foregoing (not shown). The top of the light source layer 120 may be provided with a cover plate (for example, a glass cover plate) 124 to form a biometric device such as a fingerprint identification device. It should be understood that the light source layer 120 may include other elements not shown in FIG. 2, and the embodiments of the present invention are not limited thereto.

For example, the light emitted by the light source 122 is blocked by external biological features (for example, fingerprint FP) to generate different reflected light L through the color filter layer 118. The color filter layer 118 may restrict the passage of light L1 of a specific wavelength corresponding to the pixel P (for example, including or corresponding to at least one photodiode and/or other suitable elements), while light of other wavelengths is blocked. The light passing through the color filter layer 118 enters the transparent pillar 110 in the second light shielding layer 114. Since the second light-shielding layer 114 may be black (for example, formed of black photoresist, black ink, black molding compound, or black solder resist material), and the size of the hole O2 of the second light-shielding layer 114 (or the transparent pillar 110) The width W2) is adjusted according to the path of light, thus preventing crosstalk between the light L1 and improving the collimating performance of the light collimating layer 116. Next, the light L1 passing through the transparent cylinder 110 enters the transparent material layer 108, and then enters the pixel P through the hole O1 of the first light-shielding layer 104. Similarly, since the size of the hole O1 of the first light-shielding layer 104 is adjusted according to the path of light, crosstalk between the light L1 can be prevented, and the collimating performance of the light collimating layer 116 can be improved.

In some embodiments, using metal (eg, copper, silver) as the first material 102 for forming the first light-shielding layer 104 can effectively simplify the manufacturing process. In addition, through the path of the aforementioned light L (or light L1), it can be seen that due to the plurality of light-shielding layers (for example, the The size of the holes (such as holes O1 and O2) of the second light-shielding layer 114) is adjusted according to the path of the light, which can effectively limit the light and prevent the light from crosstalking with each other. At the same time, the transparent material layer 108 is provided to make the light accurate The transparent pillar 110 of the straight layer 116 may have a small aspect ratio, thereby avoiding or reducing the collapse of the transparent pillar 110, and at the same time, the light collimating layer 116 maintains good collimating performance (that is, the pixel P senses The resolution is more advanced).

Figures 3A, 3B, 3C, 3D, 3E, and 3F are a series of cross-sectional views illustrating a method of forming a semiconductor device 100' according to another embodiment of the present invention. Some differences between the semiconductor device 100' and the semiconductor device 100 are the location of the first light-shielding layer 204 of the semiconductor device 100' and the structure of the second light-shielding layer 214-1. This will be described in detail later.

First, according to some embodiments, as shown in FIG. 3A, a substrate 101 is provided, and the substrate 101 may have a top surface 101T and a bottom surface 101B opposite to the top surface 101T. The substrate 101 may include a plurality of pixels P. In some embodiments, the plurality of pixels P of the substrate 101 may be arranged in an array, but the embodiment of the present invention is not limited thereto. In some embodiments, one pixel P of the substrate 101 includes or corresponds to at least one photodiode and/or other suitable elements, which can convert the received optical signal into a current signal.

Next, according to some embodiments, the transparent material 106 is disposed on the top surface 101T of the substrate 101 so that the transparent material 106 can completely cover or partially cover the pixel P. For example, the transparent material 106 may be transparent photoresist, polyimide, epoxy resin, other suitable materials, or a combination of the foregoing materials. In the subsequent process, the transparent material 106 can be used to form the transparent material layer and the transparent pillar (for example, the transparent material layer 108 and the transparent pillar 210 described later), which will be described in detail later.

In some embodiments, the transparent material 106 may include a photocurable material, heat Cured material or a combination of the above. For example, a spin-on coating process may be used to coat the transparent material 106 on the top surface 101T of the substrate 101, but the embodiments of the present invention are not limited thereto.

Next, according to some embodiments, as shown in FIG. 3B, the light-shielding material 202 is disposed on the transparent material 106. In this embodiment, the light-shielding material 202 may be photoresist (eg, black photoresist or other suitable non-transparent photoresist), ink (eg, black ink or other suitable non-transparent ink), molding compound (molding) compound) (e.g. black molding compound or other suitable non-transparent molding compound), solder mask (e.g. black solder mask or other suitable non-transparent solder resist material), epoxy resin , Other suitable materials or combinations of the foregoing materials. In some embodiments, the light-shielding material 202 may be a photo-curable material, a thermal-curable material, or a combination of the foregoing materials. However, the embodiments of the present invention are not limited thereto. In other embodiments, the light-shielding material 202 may also be metal, such as copper, silver, etc.

Next, as shown in FIG. 3B, a patterning process may be performed to pattern the light-shielding material 202 to form the first light-shielding layer 204. In detail, the aforementioned patterning process removes part of the light-shielding material 202 to form the first light-shielding layer 204 having a plurality of holes O1 corresponding to the pixels P. In some embodiments, the aforementioned patterning process includes soft baking, mask aligning, exposure, post-exposure baking, developing, and moisturizing. Rinsing, drying, other suitable steps or a combination of the preceding steps.

Next, according to some embodiments, as shown in FIG. 3C, the transparent material 106 is disposed on the first light-shielding layer 204 so that the transparent material 106 can completely cover or partially cover the first light-shielding layer 204 and fill the first light-shielding layer A plurality of holes O1 of 204.

Next, according to some embodiments, as shown in FIG. 3D, the light-shielding material 202 is again disposed on the transparent material 106, and a patterning process is performed to pattern the light-shielding material 202 to form a second light-shielding layer 214-1. In detail, the aforementioned patterning process removes part of the light-shielding material 202 to form the second light-shielding layer 214-1 having a plurality of holes O2 corresponding to the pixels P. Similarly, the aforementioned patterning process includes soft baking, reticle alignment, exposure, post-exposure baking, development, rinsing, drying, other suitable steps, or a combination of the aforementioned steps.

Next, according to some embodiments, as shown in FIG. 3E, the transparent material 106 is disposed on the second light-shielding layer 214-1 so that the transparent material 106 can completely cover or partially cover and fill the second light-shielding layer 214-1 The plurality of holes O2 of the second light-shielding layer 214-1.

Next, according to some embodiments, as shown in FIG. 3F, the light-shielding material 202 is again disposed on the transparent material 106, and a patterning process is performed to pattern the light-shielding material 202 to form a third light-shielding layer 214-2. In detail, the aforementioned patterning process removes part of the light-shielding material 202 to form a third light-shielding layer 214-2 having a plurality of holes O3 corresponding to the pixels P. Similarly, the aforementioned patterning process includes soft baking, reticle alignment, exposure, post-exposure baking, development, rinsing, drying, other suitable steps, or a combination of the aforementioned steps.

In some embodiments, the plurality of holes O3 of the third light-shielding layer 214-2 is optionally filled with a transparent material 106 to flatten the top surface of the third light-shielding layer 214-2. However, the embodiments of the present invention are not limited thereto.

In some embodiments, the transparent material layer 208 formed of the transparent material 106 may include a pad portion 208-1 and a partition portion 208-2. As shown in FIG. 3F, the pad portion 208-1 is provided between the substrate 101 and the first light-shielding layer 204, and the partition portion 208-2 is provided in the first mask Between the light layer 204 and the second light-shielding layer 214-1 and between the second light-shielding layer 214-1 and the third light-shielding layer 214-2.

As shown in FIG. 3F, in this embodiment, the transparent material of the plurality of holes O1 filled in the first light-shielding layer 204, the transparent material of the plurality of holes O2 filled in the second light-shielding layer 214-1, and optionally The transparent material filled in the plurality of holes O3 of the third light-shielding layer 214-2 can be regarded as the transparent pillar 210 of the semiconductor device 100'. That is, the transparent pillar 210 of this embodiment may be disposed in the first light-shielding layer 204, the second light-shielding layer 214-1, and the third light-shielding layer 214-2. Similarly, the transparent cylinder 210 may have a round top surface. However, the embodiments of the present invention are not limited thereto. In other embodiments, the top surface of the transparent cylinder 210 may be elliptical, oblong, rectangular, hexagonal, irregular, other suitable shapes, or a combination of the aforementioned shapes.

As shown in FIG. 3F, in some embodiments, the transparent pillar 210, the first light-shielding layer 204, the second light-shielding layer 214-1, the third light-shielding layer 214-2, and the transparent material layer 208 together form the semiconductor device 100'的光光向层216。 The light collimating layer 216.

In some embodiments, the cross-sectional area of the hole 02 of the second light-shielding layer 214-1 and the cross-sectional area of the hole O3 of the third light-shielding layer 214-2 are different from each other. For example, in the embodiment shown in FIG. 3F, the cross-sectional area of the hole 02 of the second shading layer 214-1 is smaller than the cross-sectional area of the hole of the third shading layer 214-2; the hole O1 of the first shading layer 204 The cross-sectional area of is larger than the cross-sectional area of the hole O2 of the second light-shielding layer 214-1, but smaller than the cross-sectional area of the hole O3 of the third light-shielding layer 214-2. However, the embodiments of the present invention are not limited thereto. In other embodiments, the cross-sectional area of the hole O1 of the first light-shielding layer 204 may be equal to the cross-sectional area of the hole O3 of the third light-shielding layer 214-2.

The holes O1 and the second of the first shading layer 204 can be adjusted according to the path of light The size of the hole O2 of the light-shielding layer 214-1 and the hole O3 of the third light-shielding layer 214-2 avoid crosstalk of light in the semiconductor device 100' with each other, and the transparent material layer 208 is provided in cooperation. Therefore, the light collimating layer 216 Each transparent pillar 210 may have a small aspect ratio, thereby avoiding or reducing the collapse of the transparent pillar 210, while maintaining a good collimating performance of the light collimating layer 216.

In some embodiments, the thickness T2' of the second light shielding layer 214-1 may be different from the thickness T3' of the third light shielding layer 214-1. However, the embodiments of the present invention are not limited thereto. In other embodiments, the thickness T1' of the first light-shielding layer 204, the thickness T2' of the second light-shielding layer 214-1, and the thickness T3' of the third light-shielding layer 214-2 are the same, and the first light-shielding layer can be changed according to actual needs The thickness of the layer 204, the second light-shielding layer 214-1, and the third light-shielding layer 214-2. In addition, the distances between the first light-shielding layer 204, the second light-shielding layer 214-1, and the third light-shielding layer 214-2 may be different, and may be adjusted according to the path of light.

It should be noted that, in some embodiments, the semiconductor device 100' may not include the third light-shielding layer 214-2. In addition, in some embodiments, the process steps of FIGS. 3C~3D (or FIGS. 3E~3F) may be repeated to form more light-shielding layers. The embodiments of the present invention do not limit the number of light-shielding layers, and can be changed according to actual needs.

FIG. 4 is a schematic diagram of applying the semiconductor device 100' of the embodiment of the present invention to the biometric device 10'. Here, the biometrics recognition device 10' is, for example, a fingerprint recognition device.

As shown in FIG. 4, in some embodiments, the biometric device 10' includes a semiconductor device 100', a color filter layer 118, and a light source layer 120. The semiconductor device 100' can be formed by the aforementioned steps of FIGS. 3A to 3F. Next, the color filter layer 118 may be disposed on the semiconductor device 100'. The color filter layer 118 may be made of a polymer material Or other suitable materials, which are used to restrict the passage of light of a specific wavelength through the color filter layer 118, while the light of other wavelengths is isolated.

Then, the light source layer 120 can be disposed on the color filter layer 118. In some embodiments, the light source layer 120 may include a light source (eg, light emitting diode) 122, and the light sources 122 may be arranged in an array, for example. In addition, the light source layer 120 may further include a barrier layer, other suitable optical elements, or a combination of the foregoing (not shown). The top of the light source layer 120 may be provided with a cover plate (for example, a glass cover plate) 124 to form a biometric device such as a fingerprint identification device. It should be understood that the light source layer 120 may include other elements not shown in FIG. 4, and the embodiments of the present invention are not limited thereto.

For example, the light emitted by the light source 122 is blocked by external biological features (for example, fingerprint FP) to generate different reflected light L through the color filter layer 118. The color filter layer 118 may restrict the passage of light L1 of a specific wavelength corresponding to the pixel P (for example, including or corresponding to at least one photodiode and/or other suitable elements), while light of other wavelengths is blocked. The light passing through the color filter layer 118 sequentially enters the transparent pillar 210 in the third light-shielding layer 214-2, the second light-shielding layer 214-1, and the first light-shielding layer 204. Since the first light-shielding layer 204, the second light-shielding layer 214-1, and the third light-shielding layer 214-2 may be black (for example, formed of black photoresist, black ink, black molding compound, or black solder resist material), and the first The size of the hole O1 of the light-shielding layer 204, the hole O2 of the second light-shielding layer 214-1, and the hole O3 of the third light-shielding layer 214-2 (or the width of the transparent pillar 210) are adjusted according to the path of light, so The crosstalk of the light L1 is prevented, and the collimating performance of the light collimating layer 216 is improved.

In addition, through the path of the aforementioned light L (or light L1), it can be seen that due to the plurality of light shielding layers (for example, the first light shielding layer 204, the second light shielding layer 214-1, and the third light shielding layer 214-2) The size of the holes (such as holes O1, O2, and O3) is adjusted according to the path of the light, which can effectively limit the light and avoid crosstalk between the lights. At the same time, the transparent material layer 208 is provided in conjunction with the light collimating layer 216. The transparent pillar 210 may have a smaller aspect ratio, thereby avoiding or reducing the collapse of the transparent pillar 210, and at the same time, the light collimating layer 216 maintains good collimating performance (ie, the resolution sensed by the pixel P is more improved ).

FIG. 5 is a schematic diagram of applying the semiconductor device 100 ″ of the embodiment of the present invention to the biometric device 10 ″. Here, the biometrics recognition device 10" is, for example, a fingerprint recognition device.

As shown in FIG. 5, in some embodiments, the biometric device 10 ″ includes a semiconductor device 100 ″, a color filter layer 118 and a light source layer 220. The difference between the semiconductor device 100" shown in FIG. 5" and the semiconductor device 100' shown in FIG. 4 (or FIG. 3F) is the thickness of the raised portion 308-1 of the transparent material layer 308 and the first light-shielding layer The size of the hole O1 of 304, the size of the hole O3 of the second light-shielding layer 314-1 and the third light-shielding layer 314-2. Other similarities or similarities will not be repeated here.

The thickness T5 of the pad portion 308-1 of the transparent material layer 308 shown in FIG. 5 is greater than the thickness T4 of the pad portion 208-1 of the transparent material layer 208 shown in FIG. 4 (or FIG. 3F). Therefore, The size of the hole O1 of the first light-shielding layer 304 and the hole O2 of the second light-shielding layer 314-1 and the hole O3 of the third light-shielding layer 314-2 shown in FIG. 5 are also different from those in FIG. 4 ( Or the hole O1 of the first light shielding layer 204 shown in FIG. 3F), the hole O2 of the second light shielding layer 214-1, and the hole O3 of the third light shielding layer 214-2 are different in size.

For example, as shown in FIG. 5, the cross-sectional area of the hole O3 of the third light-shielding layer 314-2 is larger than the cross-sectional area of the hole O2 of the second light-shielding layer 314-1, and the hole O2 of the second light-shielding layer 314-1 Is larger than the cross-sectional area of the hole O1 of the first light-shielding layer 304. this In addition, the partition 308-2 of the transparent material layer 308 may be different from the partition 208-2 of the transparent material layer 208 shown in FIG. 4 (or FIG. 3F). In some embodiments, the light source layer 220 may also increase the thickness of the raised portion 308-1 of the transparent material layer 308 and correspondingly reduce the thickness of the light source layer 220.

In summary, the light collimating layer of the semiconductor device of the embodiment of the present invention includes a plurality of light-shielding layers with holes having different cross-sectional areas. Since these light-shielding layers are provided in the light collimating layer, and the transparent material layer can be provided in coordination, the transparent cylinder of the light collimating layer can have a small aspect ratio, thereby avoiding or reducing the occurrence of the transparent cylinder The collapsed condition also keeps the light collimating layer with good collimating performance.

The foregoing text summarizes the characteristic parts of many embodiments, so that those with ordinary knowledge in the art can better understand the embodiments of the present invention from various aspects. Those of ordinary skill in the art should understand and can easily design or modify other processes and structures based on the embodiments of the present invention to achieve the same purpose and/or achieve the embodiments described herein The same advantages. Those of ordinary skill in the art should also understand that these equivalent structures do not depart from the spirit and scope of the embodiments of the present invention. Without departing from the spirit and scope of the embodiments of the present invention, various changes, substitutions, or modifications can be made to the embodiments of the present invention. Therefore, the scope of protection of the present invention shall be deemed as defined by the scope of the attached patent application. In addition, although the present invention has been disclosed above in several preferred embodiments, it is not intended to limit the present invention, and not all advantages have been described in detail here.

Each request item of the present disclosure may be a separate embodiment, and the scope of the present disclosure includes each request item and each embodiment of the present disclosure in combination with each other.

100: semiconductor device

101: substrate

104: first shading layer

108: transparent material layer

110: transparent cylinder

114: Second shading layer

116: Light collimation layer

H1: height

P: Pixel

O1, O2: holes

T1, T2: thickness

W1, W2: width

Claims (20)

A semiconductor device includes: a substrate having a plurality of pixels; and a light collimating layer disposed on the substrate, the light collimating layer includes: a transparent material layer covering the pixels; a first A light-shielding layer, disposed on the substrate, the first light-shielding layer has a plurality of holes corresponding to the pixels; a second light-shielding layer, disposed on the first light-shielding layer; and a plurality of transparent pillars, It is disposed in the second light-shielding layer; wherein the width of one of the transparent pillars is greater than the width of one of the holes. The semiconductor device as described in item 1 of the patent application range, wherein the transparent material layer is disposed between the first light-shielding layer and the second light-shielding layer. The semiconductor device as described in item 2 of the patent application range, wherein the first light shielding layer is formed of a first material, the second light shielding layer is formed of a second material, and the first material is different from the second material. The semiconductor device as described in item 3 of the patent application range, wherein the first material is metal. The semiconductor device as described in item 3 of the patent application range, wherein the second material is photoresist, ink, molding compound, solder resist material, epoxy resin, or a combination of the foregoing materials. The semiconductor device as described in item 2 of the patent application range, wherein the first light shielding layer directly contacts the top surface of the substrate. The semiconductor device as described in item 2 of the patent application range, wherein the thickness of the first light-shielding layer is smaller than the thickness of the second light-shielding layer. The semiconductor device according to item 1 of the patent application scope, wherein the transparent material layer includes a pad portion and at least one partition portion, the pad portion is disposed between the substrate and the first light-shielding layer, and the at least one The partition is disposed between the first light-shielding layer and the second light-shielding layer. The semiconductor device as described in item 8 of the patent application range, wherein the first light-shielding layer and the second light-shielding layer are formed of the same material. The semiconductor device as described in item 9 of the patent application range, wherein the materials of the first light-shielding layer and the second light-shielding layer are photoresist, ink, molding compound, solder resist material, epoxy resin, or a combination of the foregoing materials. The semiconductor device of claim 10, wherein the light collimating layer further includes a third light shielding layer, the third light shielding layer is disposed on the second light shielding layer, and the transparent material layer includes a plurality of the partitions The partitions are provided between the first light-shielding layer and the second light-shielding layer and between the second light-shielding layer and the third light-shielding layer. The semiconductor device as described in item 11 of the patent application range, wherein the second light-shielding layer and the third light-shielding layer respectively have a plurality of holes, and the cross-sectional area of each hole of the second light-shielding layer and the third light-shielding layer The cross-sectional area of each hole is different from each other. The semiconductor device as described in item 11 of the patent application range, wherein the thickness of the second light shielding layer is different from the thickness of the third light shielding layer. A semiconductor device, including: A substrate having a plurality of pixels; and a light collimating layer disposed on the substrate, the light collimating layer includes: a plurality of light shielding layers disposed on the substrate, each light shielding layer having a corresponding to the A plurality of holes such as pixels; and a transparent material layer disposed between the light-shielding layers and filling the holes; wherein the cross-sectional areas of the holes of different light-shielding layers are different from each other. The semiconductor device as described in item 14 of the patent application range, wherein the light-shielding layer closest to the substrate among the light-shielding layers directly contacts the substrate. The semiconductor device as described in item 15 of the patent application scope, wherein the material of the light-shielding layer closest to the substrate is metal, and the material of the other light-shielding layer is photoresist, ink, molding compound, solder resist material, epoxy resin or the foregoing Combination of materials. The semiconductor device as described in item 15 of the patent application range, wherein the cross-sectional area of the hole closest to the light-shielding layer of the substrate is smaller than the cross-sectional area of the holes of the other light-shielding layer. The semiconductor device as described in item 14 of the patent application range, wherein the thicknesses of the light-shielding layers are different from each other. A biometrics device, comprising: the semiconductor device according to claim 1 or 14; a color filter layer provided on the semiconductor device; and a light source layer including a plurality of light sources, the light source layer provided on the color filter On the light layer. The biometrics identification device as described in item 19 of the patent application scope, wherein each of the light sources is set corresponding to each of the pixels.

Images